2SB1699资料

Rating −60 −60 −6 −2 −4 1
Unit V V V
45˚
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
25°C
0.4
M Di ain sc te on na tin nc ue e/ d
0.2
−1 mA −10
0
0
20
40
60
80 100 120 140 160
0
−2
−4
−6
−8
−12
0
− 0.2
− 0.4
− 0.6
− 0.8
−1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
80
VCE = −4 V, IC = − 0.2 A IC = −2 A, IB = −250 mA
60
e
ea s
30
Collector-emitter saturation voltage Turn-on time Storage time Fall time Transition frequency
3.0±0.15
Peak collector current
A
Junction temperature Storage temperature
Tstg
or more, and the board Note) *: Print circuit board: Copper foil area of 1 thickness of 1.7 mm for the collector portion
1
Collector current IC (A)
0.8
Collector current IC (A)
−1.2 −1
− 0.07 − 0.06 − 0.05 − 0.04 − 0.03 − 0.02 − 0.01 0
Ta = 85°C
−25°C
0.6
− 0.8 − 0.6 − 0.4 − 0.2 0
VCB = −60 V, IE = 0 VCE = −60 V, IB = 0
Collector-emitter cut-off current (Base open)
vi
si
VCE = −4 V, IC = −1 A VCE = −4 V, IC = −2 A IC = −1 A, IB1 = 0.1 A
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1699
Silicon PNP epitaxial planar type
Unit: mm
For power amplification ■ Features
1.0+0.1 –0.2
1
3 2 0.5±0.08
Publication date: April 2004
SJC00304AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1699
PC Ta
1.2
IC VCE
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
• Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
150
−25°C
100
−10−2
25°C
−10−3 − 0.1
−1
−10
−102
−103
−104
0 − 0.001
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
−25°C 50
10 −10
*
VCE(sat)
Pl
IB2 = − 0.1 A, VCC = −50 V VCB = −10 V, IE = 50 mA, f = 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
or m
250
Collector output capacitance C (pF) (Common base, input open circuited) ob
−10
IC/IB = 8
300
100
at io n.
−20 −30
VCE(sat) IC
hFE IC
Cob VCB
f = 1 MHz Ta = 25°C
Collector power dissipation *
W
Marking Symbol: 3A
150
°C
−55 to +150
°C
Conditions
Min −60
or m
Typ 0.2 0.4 0.1 180
A
IC = −1 mA, IB = 0
Collector-base cutoff current (Emitter open) Forward current transfer ratio *
− 0.01
− 0.1
−1
−10
0
−40
Collector current IC (mA)
Collector current IC (A)
Collector-base voltage VCB (V)
2
Pl
ea s
e
vi
si
SJC00304AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
4.5±0.1 1.6±0.2 1.5±0.1
4.0+0.25 –0.20
2.5±0.1 3˚
0.4±0.04
M Di ain sc te on na tin nc ue e/ d
0.4±0.08 1.5±0.1 3˚
Parameter
Symbol VCBO VCEO VEBO IC ICP PC Tj
−1.6 Ta = 25°C −1.4 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA
− 0.1 − 0.09 − 0.08 VCE = −4 V
IC VBE
Collector power dissipation PC (W)
Base-emitter voltage VBE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Taபைடு நூலகம்= 85°C
VCE = −4 V
Forward current transfer ratio hFE
−1
25°C
200
−10−1
Ta = 85°C
at io n.
Max −100 −100 250 − 0.5
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Unit V µA µA
V µs µs µs MHz
0.4 max.
2.6±0.1
■ Absolute Maximum Ratings Ta = 25°C
cm2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol VCEO ICBO ICEO hFE1 hFE2 hFE3 ton tstg tf fT Collector-emitter voltage (Base open)