HMC478

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17
Reverse Isolation
DC - 4.0 GHz
20
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
15
18
1.0 - 2.0 GHz
13
16
2.0 - 3.0 GHz
11
14
3.0 - 4.0 GHz
9
12
Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing)
General Description
The HMC478MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT ampliﬁer covering DC to 4 GHz. This Micro-P packaged ampliﬁer can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478MP86 offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
Gain vs. Temperature
GAIN (dB)
30 28 26 24 22 20 18 16 14 12 10
8 6 4 2 0
0
+25 C +85 C -40 C
1
2
3
4
5
FREQUENCY (GHz)
8
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
16
12 Gain
8
P1dB
Psat
4
OIP3
0
5
6
7
8
Vs (Vdc)
Gain, Power & OIP3 vs. Supply Voltage for Rs = 18 Ohms @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
8 - 366
Electrical Speciﬁcations, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Typ.
Gain
DC - 1.0 GHz
19
22
1.0 - 2.0 GHz
15
18
2.0 - 3.0 GHz
13
16
3.0 - 4.0 GHz
AMPLIFIERS - SMT
v00.1004
Broadband Gain & Return Loss
RESPONSE (dB)
30
25
20
15
10
5
S21
0
S11
-5
S22
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
HMC478MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
0.5 - 2.0 GHz
32
2.0 - 3.0 GHz
29
3.0 - 4.0 GHz
25
Max. 0.02
Units
dB dB dB dB
dB/ °C
dB dB dB
dB dB
dB
dBm dBm dBm dBm
dBm dBm dBm
Note: Data taken with broadband bias tee on device output.
-10
-15
-20
+25 C
+85 C
-25
-40 C
-30
0
1
2
3
4
5
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-5
+25 C
+85 C
-10
-40 C
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
8 - 367
AMPLIFIERS - SMT P1dB (dBm)
v00.1004
HMC478MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
8
P1dB vs. Temperature
24
22
20
18
16
14
12
10
+25 C
8
+85 C
6
3.8
3.9
4
4.1
4.2
4.3
Vcc (Vdc)
Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 62 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
24
20
+6.0 Vdc 100 mA +5 dBm 150 °C
0.583 W
111.5 °C/W
-65 to +150 °C -40 to +85 °C Class 1C
HMC478MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at
AMPLIFIERS - SMT
v00.1004
8 Typical Applications The HMC478MP86 is an ideal RF/IF gain block & LO or PA driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment Functional Diagram
AMPLIFIERS - SMT
v00.1004
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFin)(Vcc = +4.3 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM)
-40 C
4
2
0
0
1
2
3