LOW POWER 3D MEMS OPTICAL SWITCHES

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PAN3204

PAN3204

PAN3204DB PAN3204 LOW COST WIRELESS MOUSE SENSOR General DescriptionAll rights strictly reserved any portion in this paper shall not be reproduced, copied or transformed to any other forms without permission. 11. Pin Configuration2. Block Diagram and Operation3. Registers and OperationThe mouse sensor can be programmed through registers, via the serial port, and DSP configuration and motion4. Specifications4.3 AC Operating Condition (1.8V)= 1.8 V, F= 18Electrical Characteristics over recommended operating conditions. Typical values at 25 °C, V4.4 AC Operating Condition (2.7V)= 2.7 V, F= 18Electrical Characteristics over recommended operating conditions. Typical values at 25 °C, V4.5 DC Electrical Characteristics (1.8V)Electrical Characteristics over recommended operating conditions. Typical values at 25 °C, V = 1.8 V, F=6. Serial InterfaceThe synchronous serial port is used to set and read parameters in the mouse sensor.SCLK:SDIO:6.1.2 Read OperationA read operation, which means that data is going from the mouse sensor to the mouse controller, is alwaysN N SC SDz Power On Problem - The problem occurs if the mouse sensor powers up before the mouse controller sets the SCLK and SDIO lines to be output. The mouse sensor and the mouse controller might get outzSDIOIDD7. MOTSWK function8. Referencing Application CircuitFigure 13. Application Circuit for 2.7V (with Red LED)8.2 Power Supply at 1.8V Application Circuit (with Red LED)#1. Battery Power Circuit8.3 Power Supply at 1.8V Application Circuit (with IR LED)8.4 Typical Application for RF Receiver8.5 PCB Layout Considerationz Caps for pins7, 8 must have trace lengths less than 5mm.z9. Package Information9.2 Recommended PCB Mechanical Cutouts and Spacing。

半导体物理与器件mems

半导体物理与器件mems

半导体物理与器件mems1.引言1.1 概述半导体物理与MEMS(微机电系统)器件是现代科技领域中非常重要的研究方向。

半导体物理研究了半导体材料的电学、热学和光学特性,以及半导体器件的制备和性能。

而MEMS器件则是利用微纳米加工技术制造出微小的机械结构,并通过集成电路技术实现控制和传感功能。

这两个领域的交叉研究为实现微小化、集成化、高性能的微型传感器、执行器和微系统提供了重要的基础。

半导体物理的研究内容包括材料的能带结构、载流子在半导体中的输运过程、电子在半导体中的行为等。

半导体器件是基于半导体材料的电子元件,如二极管、晶体管、集成电路等。

半导体物理的研究能够帮助我们更好地理解和设计各类半导体器件,进一步推动半导体技术的发展。

MEMS器件是在微纳米尺度上制造的微小机械系统。

它们通常由微电子器件、微机械结构和传感器等组成。

MEMS器件具有体积小、质量轻、功耗低、快速响应和高集成度等特点。

MEMS器件的研究涉及到微纳加工工艺、微尺度机械结构设计、传感与控制等一系列技术和理论。

随着纳米技术和微电子技术的不断发展,MEMS器件在医疗、通信、汽车、航空航天等领域有着广泛的应用前景。

半导体物理与MEMS器件的结合为微电子技术的发展提供了新的思路和方向。

通过将半导体物理与MEMS器件相结合,我们可以实现更小型化、更高性能的器件和系统。

这不仅能够满足日益增长的微型化和集成化需求,还有助于推动人工智能、物联网、生物医学等领域的技术创新和应用。

因此,对于半导体物理与MEMS器件的研究和深入理解具有重要意义,将为科技进步和社会发展提供强有力的支撑。

1.2文章结构1.2 文章结构本文分为三个主要部分,分别是引言、正文和结论。

在引言部分,我们将提供对半导体物理与MEMS器件的简要概述,介绍其重要性和应用领域。

同时,我们将阐明本文的目的和意义。

接着,正文部分将深入探讨半导体物理和MEMS器件的相关内容。

在半导体物理部分,我们将介绍半导体材料的基本原理、能带理论和半导体器件的工作原理。

美奇 Micrel MIC4478 79 80 低压双尖极电流控制驱动器说明书

美奇 Micrel MIC4478 79 80 低压双尖极电流控制驱动器说明书

MIC4478/79/80 Evaluation Board32V Low-Side Dual MOSFET DriversGeneral DescriptionThe MIC4478, MIC4479, and MIC4480 are low-side dualMOSFET drivers. They are designed to switch N-channelenhancement type MOSFETs from TTL-compatible controlsignals for low-side switching applications. The MIC4478 isdual non-inverting, the MIC4479 is dual inverting, and theMIC4480 has complimentary non-inverting and invertingdrivers. Short propagation delays and high peak currentsproduce precise edges and rapid rise and fall times. TheMIC4478/4479/4480 are powered from a +4.5V to +32Vsupply voltage. The on-state gate drive output voltage isapproximately equal to the supply voltage (no internalregulators or clamps). In a low-side configuration, thedrivers can control a MOSFET that switches any voltageup to the rating of the MOSFET. The MIC4478/4479/4480are available in an 8-lead SOIC (ePAD and non-ePAD)package and rated for –40°C to +125°C ambienttemperature range.Data sheets and support documentation are available onMicrel’s web site at: .Evaluation Board DescriptionControl IC ............................... MIC4478/MIC4479/MIC4480Topology ......... Dual Low-Side MOSFET Driver with EnableV DD Supply Voltage Range(1)............................. 4.5V to 32VMaximum Input Pin Voltage ........................................... V DDMaximum Enable Pin Voltage ........................................ V DDMaximum External FET Supply Voltage (V IN) (100V)Note:1. V DD must be less than 18V so as not to exceed the maximum FETV GS rating.Features•External MOSFETs on the board to simplify testing.•Resistor and capacitor component locations on thedriver outputs for ease of testing.RequirementsThe evaluation board requires:• A V DD power supply with an output between 4.5Vand 32V to power the driver. While the driver canoperate up to 32V, do not exceed 18V when usingthe MOSFETs that come with this evaluationboard.•An external V IN supply voltage for powering theMOSFET drains. Do not exceed the 100V V DSrating of the MOSFETs.Precautions•Ensure the V DD supply does not exceed themaximum V GS of the MOSFETs being used.V GS(ABS_MAX) for the MOSFETs that come with theevaluation board is 20V. 18V maximum isrecommended.•The evaluation board does not have reversepolarity protection. Applying a negative voltage toV DD or V IN may damage the device. Do not exceed32V on the input, nor exceed the MOSFET’sV GS(MAX) to prevent damage to the driver andMOSFETs. Do not exceed 100V on either of thetwo DRAIN_A or DRAIN_B terminals.Ordering InformationPart Number DescriptionMIC4478YML EV MIC4478YML Evaluation BoardMIC4479YML EV MIC4479YML Evaluation BoardMIC4480YML EV MIC4480YML Evaluation BoardGetting Started1. Connect the V DD and GND terminals to an externalsupply voltage. The input voltage range is from 4.5V to 18V. The 18V maximum is limited by the V GS of theMOSFETs.2. Apply a square wave or pulse to the INA and/or INBterminals. The logic 0 level is less than 0.8V and thelogic 1 level is greater than 2.4V. Do not exceed V DDon the inputs. Headers TP1 and TP4 may be used toapply or monitor the input signal.3. The output signal can be monitored with a scopeprobe at the OUT_A and OUT-B pins. Headers TP3and TP6 may also be used to monitor the outputsignals.ENA and ENB InputsThe ENA and ENB inputs are each accessible through a 3-pin header. The EN pins are internally pulled up and do not need a jumper or external signal for the outputs to be enabled. The outputs can be individually disabled with a low signal or a shorting jumper connected from EN to ground. Headers JP2 and JP3 can be used to apply or monitor the enable signals.INA and INB InputsThe output drivers are controlled by the INA and INB signal. Table 1to shows the output state based on the input for each of the three drivers. Do not leave the inputs floating when V DD is applied.Table 1. Input ConfigurationDevice INA(Pin 2)INB(Pin 4)OUTA(Pin 7)OUTB(Pin 5)MIC4478 L/H L/H L/H L/HMIC4479 L/H L/H H/L H/LMIC4480 L/H L/H H/L L/HOUTA and OUTB OutputsThe evaluation board allows the option of driving a MOSFET or capacitance. The board is populated with a 100V N-channel MOSFET to show “real world” operation. The MOSFET may be removed and a capacitor used if standardized testing is needed. Capacitor locations C3 (OUT_A) and C6 (OUT_B) may be used for capacitive testing.Resistor locations R4 and R9 allow a resistor to be placed in series with the driver output. The board comes with the resistor pads shorted with etch. The etch between the pads of the resistor must be cut before a resistor is added. External MOSFETsA pair of 100V MOSFETs are included with the board to facilitate testing of the driver. Terminals are provided for an external supply. A 1kΩresistor is connected in series between each of the supply inputs and MOSFET drains. This limits the current flowing through the MOSFETs and allows the switching waveform to be observed. These resistors may be changed or removed, depending on the application. A 4.7µF capacitor, from the supply terminal to ground, is provided for decoupling the high frequency switching currents. The capacitors and MOSFETs are rated to 100V.Evaluation Board SchematicJ1V J3J14J4INA J11INBJ12GND J7DRAIN_BBill of MaterialsItem Part Number Manufacturer Description Qty. C1 C1608X7R1H104K080AA TDK(2)0.1µF Ceramic Capacitor, 50V, X7R, Size 0603 1 C2, C7 C3126X5R1H105K160AA TDK 1µF Ceramic Capacitor, 50V, X5R, Size 1206 1 C3, C6 Open Location, Size 0603 2 C4, C5 C3225X7S2A475M200AB TDK 4.7µF Ceramic Capacitor, 100V, X7S, Size 1210 2 Q1, Q2 AM4492N Analog Power(3)100V, N-Channel MOSFET, SOIC-8 2 R1, R2, R4,R5b, R6,R7b, R8, R9Open Location, Size 0603 8 R5, R7 CRCW12061001FRT1 Vishay(4)1kΩ Resistor (1206 size), 1% 2U1 MIC4478YMEMicrel, Inc.(5)32V Low-Side Dual MOSFET Driver 1 MIC4479YMEMIC4480YMENotes:2. TDK: .3. Analog Power: .4. Vishay: .5. Micrel, Inc.: .PCB Layout RecommendationsTop LayerBottom LayerMICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USATEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB Micrel, Inc. is a leading global manufacturer of IC solutions for the worldwide high performance linear and power, LAN, and timing & communications markets. The Company’s products include advanced mixed-signal, analog & power semiconductors; high-performance communication, clock management, MEMs-based clock oscillators & crystal-less clock generators, Ethernet switches, and physical layer transceiver ICs. Company customers include leading manufacturers of enterprise, consumer, industrial, mobile, telecommunications, automotive, and computer products.Corporation headquarters and state-of-the-art wafer fabrication facilities are located in San Jose, CA, with regional sales and support offices and advanced technology design centers situated throughout the Americas, Europe, and Asia. Additionally, the Company maintains an extensive networkof distributors and reps worldwide.Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this datasheet. This information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry, specifications and descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Micrel’s terms and conditions of sale for such products, Micrel assumes no liability whatsoever, and Micrel disclaims any express or implied warranty relating to the sale and/or use of Micrel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fullyindemnify Micrel for any damages resulting from such use or sale.© 2015 Micrel, Incorporated.。

微尺寸电子产品参考文档说明书

微尺寸电子产品参考文档说明书

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PL611-30
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PL611s-02
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RF_MEMS_Switches

RF_MEMS_Switches
the new revolution in microelectronics. It is similar to VLSI
circuits in that it allows the execution of complex functions
on a size scale orders of magnitude lower and at far less
MEMS application through its incorporation in air bags [1].
At the same time, MEMS leverages VLSI through the use
of common design and batch processing methodologies and
device addressed is the electrostatic microswitch—perhaps the
paradigm RF-MEMS device. Through its superior performance
characteristics, the microswitch is being developed in a number of
commercially available for global positioning receivers.1
This paper deals with another technology that has emerged
in recent years with a comparable level of interest and more
and personal communications service (PCS) bands around 0.9

《电讯技术》继续入选中国科技核心期刊

《电讯技术》继续入选中国科技核心期刊

2ˑ2phased array consisting of square loop antennas for high gain wide angle scanning with low grating lobes [J].IEEE Transactions on Microwave Theory and Tech-niques,2017,65(2):576-583.[4]㊀WEN Y Q,WANG B Z,DING X.A wide -angle scanning and low sidelobe level microstrip phased array based on genetic algorithm optimization[J].IEEE Transactions on Antennas and Propagation,2016,64(2):805-810.[5]㊀MAILLOUX R J.Phased array antenna handbook[M].2nd ed.New York:Artech,2008.[6]㊀薛永,栾珊,王晓婷,等.相控阵天线在通信卫星中的应用分析[C]//中国飞行器测控学术年会论文集.北京:清华大学出版社,2018:20-29.[7]㊀朱文冰.星载合成孔径雷达的可靠性设计[J].现代雷达,2006,28(4):75-78.[8]㊀侯雪风,祝大龙,刘德喜,等.用于星际数传的S 波段四通道T 组件[J].遥测遥控,2018,39(3):43-47.[9]㊀KROENING A M.Advances in ferrite redundancy switc-hing for Ka -band receiver applications[J].IEEE Trans-actions on Microwave Theory and Techniques,2016,64(6):1911-1917.[10]㊀SINHA S,BANSA1D,RANGRA K J.RF MEMS com-pact t -type switch design for switch matrix applications in space telecommunication[C]//Proceedings of ICAE-SM -2012.Nagapattin:IEEE,2012:130-135.[11]㊀ZAHR1A H,ZHANG L Y,DORION C,et al.Long -term actuation demonstration of RF -MEMS switches for spaceapplications [C]//Proceedings of 2018Symposium on Design,Test,Integration and Packaging of MEMS and MOEMS.Roman:IEEE,2018:130-135.[12]㊀龚秀丽,孙绍强,李鑫.射频开关在高低温电测试试验中的失效分析及改进[J].电子设计工程,2016,24(23):115-121.[13]㊀严丰庆,钱澄.射频开关及其在通信系统中的应用[J].电子器件,2005,28(1):97-100.[14]㊀张凯,延波,徐锐敏.Ka 频段上变频模块的设计[J].电讯技术,2007,47(5):100-103.[15]㊀陈红卫.双频和3-6GHz 宽带功分器及其小型化研究与设计[D].昆明:云南大学,2015.[16]㊀SHI J,QIANG J,XU K,et al.A balanced branch -line coupler with arbitrary power division ratio [J ].IEEE Transactions on Microwave Theory and Techniques,2017,65(1):IEEE,2018:78-85.[17]㊀李东亚,薛红喜.新型3dB 电桥的设计[J].电讯技术,2009,49(11):90-93.[18]㊀POZAR D M.微波工程[M].张肇仪,周乐柱,吴德明,等译.3版.北京:电子工业出版社,2006.作者简介:姚亚利㊀女,1989年生于河南洛阳,2017年获博士学位,现为工程师,主要研究方向为相控阵天线㊂简讯‘电讯技术“继续入选中国科技核心期刊2020年12月29日,中国科学技术信息研究所(简称中信所)以在线会议方式召开 2020年中国科技论文统计结果发布会 ,发布了‘2020年版中国科技期刊引证报告(核心版)自然科学卷“㊂根据该报告,‘电讯技术“继续被收录为 中国科技核心期刊 (中国科技论文统计源期刊),且核心总被引频次㊁核心影响因子和综合评价总分等关键指标明显提升㊂‘2020年版中国科技核心期刊引证报告(核心版)自然科学卷“以‘中国科技论文与引文数据库(CST-PCD)“为基础,采用科学客观的研究方法与评价方式,通过定量评价与专家评审,遴选出了中国自然科学领域各个学科分类的重要期刊作为统计来源期刊㊂该卷收录了在中国(不含港澳台地区)正式出版的1949种中文期刊和121种英文期刊,共2070种 中国科技核心期刊 ㊂与2019年版相比,总量增加了21种,有26种中文期刊和10种英文期刊新入选,部分期刊因不符合学术质量和水平要求以及存在违规和学术不端行为被淘汰,体现了科技核心期刊的继承性与动态性㊂中信所的科技核心期刊遴选每年一次,选出的中国科技核心期刊是中国各学科领域中较重要的㊁能反映本学科发展水平的科技期刊,相关成果被科技管理部门和学术界广泛应用㊂四川省有87种自然科学类期刊入选,中国电子科技集团有限公司(中国电科)有17种期刊名列其中㊂本刊编辑部㊀赵勇㊃14㊃第61卷姚亚利:高可靠低功耗Ka 频段星载有源相控阵冗余备份技术第1期。

Silicon Sensing Systems DMU30-01 高性能 MEMS 陀螺仪 加速计技

Silicon Sensing Systems DMU30-01 高性能 MEMS 陀螺仪 加速计技

FeaturesPrecision 6-DOF MEMS Inertial Measurement Unit Silicon Sensing’s latest VSG3Q MAX inductive gyroand capacitive accelerometer MEMSExcellent Bias Instability and Random WalkAngular - 0.1°/hr, 0.02°/√hrLinear - 15μg, 0.05m/s/√hrNon-ITARCompact and lightweight - 68.5 x 61.5 x 65.5H (mm), 345gInternal power conditioning to accept 4.75V to 36V input voltageRS422 interfaces-40°C to +85°C operating temperature range Sealed aluminium housingRoHS compliantIn-house manufacture from MEMS fabrication to IMU calibrationEvaluation kit and integration resources availableFirst class customer technical supportFuture developments and expansion capabilityMulti sensor MEMS blendingLow power ‘sleep’ modeAdditional sensor integration - GPS/Magnetometer/BarometerNorth fi nding modeAHRS functionalityOther interface protocols and specifi cationsCustom and host application integrationDMU30-01 IMU DMU30 Evaluation Kit DMU30 Mating ConnectorFigure 5.3 Gyro Scale Factor Errorover TemperatureFigure 5.5 Gyro Max Non-Linearity Error (±490°/s range) over Temperature Figure 5.4 Normalised Gyro Scale Factor Errorover TemperatureFigure 5.6 Gyro Max Non-Linearity Error (±200°/s range) over TemperatureFigure 5.1 Gyro Bias Error (°/h) over Temperature Figure 5.2 Normalised Gyro Bias Error (°/h)over TemperatureFigure 5.11 Accelerometer Scale Factor Error (±1g range) over Temperature(Plymouth g = 9.81058m/s/s)Figure 5.10 Normalised AccelerometerBias Error (mg) over TemperatureFigure 5.12 Normalised Accelerometer Scale Factor Error (±1g range) over TemperatureFigure 5.7 Gyro Noise (°/srms) vs Test Chamber Temperature Figure 5.8 Gyro Misalignments and Crosscoupling (±200°/s range) over Chamber TemperatureFigure 5.15 current Consumption vs Chamber Temperature (12V supply)Figure 5.16 DMU30 Temperature Output Difference (°/C) vs Test Temperature (self heating)Figure 5.17 Gyro Allan Variance Figure 5.14 Accelerometer Misalignments and Crosscoupling over TemperatureFigure 5.18 Gyro In Run StabilityFigure 5.21 Accelerometer Allan Variance Figure 5.23 Accelerometer Spectral DataFigure 5.22 Accelerometer In Run Stability Figure 5.24 Accelerometer Cumulative Noise Figure 5.20 Gyro Cumulative NoiseFigure 5.19 Gyro Spectral DataFigure 8.1 DMU30 Evaluation Kit8.1.1 DMU30 Evaluation Kit ContentsFigure 9.1 DMU30 LabelSER NO. YYWWXXXX CCMADE IN PLYMOUTH UKFigure 11.1 Axis De In order to minimise the requirement for size effectcompensation the accelerometer seismic masses have been located as close as possible to the centre of the DMU30 (the inertial reference point shown in Figure 11.2).61.5 M A X68.5 MAXExperts on Design-Infor sensors and power solutionsScan here and get an overview of personal contacts!We are here for you. Addresses and Contacts.Headquarter Switzerland:Angst+Pfister Sensors and Power AG Thurgauerstrasse 66CH-8050 ZurichPhone +41 44 877 35 00*********************************Office Germany:Angst+Pfister Sensors and Power Deutschland GmbH Edisonstraße 16D-85716 UnterschleißheimPhone +49 89 374 288 87 00************************************。

超低功耗微型超声时间差测距传感器CH101说明书

超低功耗微型超声时间差测距传感器CH101说明书

CH101 Ultra-low Power Integrated Ultrasonic Time-of-Flight Range SensorChirp Microsystems reserves the right to change specifications and information herein without notice.Chirp Microsystems2560 Ninth Street, Ste 200, Berkeley, CA 94710 U.S.A+1(510) 640–8155Document Number: DS-000331Revision: 1.2Release Date: 07/17/2020CH101 HIGHLIGHTSThe CH101 is a miniature, ultra-low-power ultrasonic Time-of-Flight (ToF) range sensor. Based on Chirp’s patented MEMS technology, the CH101 is a system-in-package that integrates a PMUT (Piezoelectric Micromachined Ultrasonic Transducer) together with an ultra-low-power SoC (system on chip) in a miniature, reflowable package. The SoC runs Chirp’s advanced ultrasonic DSP algorithms and includes an integrated microcontroller that provides digital range readings via I2C.Complementing Chirp’s long-range CH201 ultrasonic ToF sensor product, the CH101 provides accurate range measurements to targets at distances up to 1.2m. Using ultrasonic measurements, the sensor works in any lighting condition, including full sunlight to complete darkness, and provides millimeter-accurate range measurements independent of the target’s color and optical transparency. The sensor’s Field-of-View (FoV) can be customized and enables simultaneous range measurements to multiple objects in the FoV. Many algorithms can further process the range information for a variety of usage cases in a wide range of applications.The CH101-00ABR is a Pulse-Echo product intended for range finding and presence applications using a single sensor for transmit and receive of ultrasonic pulses. The CH101-02ABR is a frequency matched Pitch-Catch product intended for applications using one sensor for transmit and a second sensor for receiving the frequency matched ultrasonic pulse.DEVICE INFORMATIONPART NUMBER OPERATION PACKAGECH101-00ABR Pulse-Echo 3.5 x 3.5 x 1.26mm LGA CH101-02ABR Pitch-Catch 3.5 x 3.5 x 1.26mm LGA RoHS and Green-Compliant Package APPLICATIONS•Augmented and Virtual Reality•Robotics•Obstacle avoidance•Mobile and Computing Devices•Proximity/Presence sensing•Ultra-low power remote presence-sensing nodes •Home/Building automation FEATURES•Fast, accurate range-finding•Operating range from 4 cm to 1.2m•Sample rate up to 100 samples/sec• 1.0 mm RMS range noise at 30 cm range•Programmable modes optimized for medium and short-range sensing applications•Customizable field of view (FoV) up to 180°•Multi-object detection•Works in any lighting condition, including full sunlight to complete darkness•Insensitive to object color, detects opticallytransparent surfaces (glass, clear plastics, etc.) •Easy to integrate•Single sensor for receive and transmit•Single 1.8V supply•I2C Fast-Mode compatible interface, data rates up to 400 kbps•Dedicated programmable range interrupt pin•Platform-independent software driver enables turnkey range-finding•Miniature integrated module• 3.5 mmx 3.5 mm x 1.26 mm, 8-pin LGA package•Compatible with standard SMD reflow•Low-power SoC running advanced ultrasound firmware•Operating temperature range: -40°C to 85°C •Ultra-low supply current• 1 sample/s:o13 µA (10 cm max range)o15 µA (1.0 m max range)•30 samples/s:o20 µA (10 cm max range)o50 µA (1.0 m max range)Table of ContentsCH101 Highlights (1)Device Information (1)Applications (1)Features (1)Simplified Block Diagram (3)Absolute Maximum Ratings (4)Package Information (5)8-Pin LGA (5)Pin Configuration (5)Pin Descriptions (6)Package Dimensions (6)Electrical Characteristics (7)Electrical Characteristics (Cont’d) (8)Typical Operating Characteristics (9)Detailed Description (10)Theory of Operation (10)Device Configuration (10)Applications (11)Chirp CH101 Driver (11)Object Detection (11)Interfacing to the CH101 Ultrasonic Sensor (11)Device Modes of Operation: (12)Layout Recommendations: (13)PCB Reflow Recommendations: (14)Use of Level Shifters (14)Typical Operating Circuits (15)Ordering Information (16)Part Number Designation (16)Package Marking (17)Tape & Reel Specification (17)Shipping Label (17)Revision History (19)SIMPLIFIED BLOCK DIAGRAMFigure 1. Simplified Block DiagramABSOLUTE MAXIMUM RATINGSPARAMETER MIN. TYP. MAX. UNIT AVDD to VSS -0.3 2.2 V VDD to VSS -0.3 2.2 V SDA, SCL, PROG, RST_N to VSS -0.3 2.2 V Electrostatic Discharge (ESD)Human Body Model (HBM)(1)Charge Device Model (CDM)(2)-2-5002500kVV Latchup -100 100 mA Temperature, Operating -40 85 °C Relative Humidity, Storage 90 %RH Continuous Input Current (Any Pin) -20 20 mA Soldering Temperature (reflow) 260 °CTable 1. Absolute Maximum RatingsNotes:1.HBM Tests conducted in compliance with ANSI/ESDA/JEDEC JS-001-2014 Or JESD22-A114E2.CDM Tests conducted in compliance with JESD22-C101PACKAGE INFORMATION8-PIN LGADESCRIPTION DOCUMENT NUMBER CH101 Mechanical Integration Guide AN-000158CH101 and CH201 Ultrasonic Transceiver Handling andAssembly Guidelines AN-000159Table 2. 8-Pin LGAPIN CONFIGURATIONTop ViewFigure 2. Pin Configuration (Top View)PIN DESCRIPTIONSPIN NAME DESCRIPTION1 INT Interrupt output. Can be switched to input for triggering and calibration functions2 SCL SCL Input. I2C clock input. This pin must be pulled up externally.3 SDA SDA Input/Output. I2C data I/O. This pin must be pulled up externally.4 PROG Program Enable. Cannot be floating.5 VSS Power return.6 VDD Digital Logic Supply. Connect to externally regulated 1.8V supply. Suggest commonconnection to AVDD. If not connected locally to AVDD, b ypass with a 0.1μF capacitor asclose as possible to VDD I/O pad.7 AVDD Analog Power Supply. Connect to externally re gulated supply. Bypass with a 0.1μFcapacitor as close as possible to AVDD I/O pad.8 RESET_N Active-low reset. Cannot be floating.Table 3. Pin DescriptionsPACKAGE DIMENSIONSFigure 3. Package DimensionsELECTRICAL CHARACTERISTICSAVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, min/max are from T A = -40°C to +85°C, unless otherwise specified.PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITSPOWER SUPPLYAnalog Power Supply AVDD 1.62 1.8 1.98 V Digital Power Supply VDD 1.62 1.8 1.98 VULTRASONIC TRANSMIT CHANNELOperating Frequency 175 kHzTXRX OPERATION (GPR FIRMWARE USED UNLESS OTHERWISE SPECIFIED)Maximum Range Max Range Wall Target58 mm Diameter Post1.2(1)0.7mm Minimum Range Min Range Short-Range F/W used 4(2)cm Measuring Rate (Sample/sec) SR 100 S/s Field of View FoV Configurable up to 180º deg Current Consumption (AVDD +VDD) I SSR=1S/s, Range=10 cmSR=1S/s, Range=1.0mSR=30S/s, Range=10 cmSR=30S/s, Range=1.0m13152050μAμAμAμA Range Noise N R Target range = 30 cm 1.0 mm, rms Measurement Time 1m max range 18 ms Programming Time 60 msTable 4. Electrical CharacteristicsNotes:1.Tested with a stationary target.2.For non-stationary objects. While objects closer than 4cm can be detected, the range measurement is not ensured.ELECTRICAL CHARACTERISTICS (CONT’D)AVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, unless otherwise specified.PARAMETERSYMBOL CONDITIONS MINTYP MAX UNITS DIGITAL I/O CHARACTERISTICS Output Low Voltage V OL SDA, INT,0.4 V Output High Voltage V OH INT 0.9*V VDD V I 2C Input Voltage Low V IL_I2C SDA, SCL 0.3*V VDDV I 2C Input Voltage High V IH_I2C SDA, SCL 0.7*V VDD V Pin Leakage Current I L SDA,SCL, INT(Inactive), T A =25°C±1μA DIGITAL/I 2C TIMING CHARACTERISTICSSCL Clock Frequencyf SCLI 2C Fast Mode400kHzTable 5. Electrical Characteristics (Cont’d)TYPICAL OPERATING CHARACTERISTICSAVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, unless otherwise specified.Typical Beam Pattern – MOD_CH101-03-01 Omnidirectional FoV module(Measured with a 1m2 flat plate target at a 30 cm range)Figure 4. Beam pattern measurements of CH101 moduleDETAILED DESCRIPTIONTHEORY OF OPERATIONThe CH101 is an autonomous, digital output ultrasonic rangefinder. The Simplified Block Diagram, previously shown, details the main components at the package-level. Inside the package are a piezoelectric micro-machined ultrasonic transducer (PMUT) and system-on-chip (SoC). The SoC controls the PMUT to produce pulses of ultrasound that reflect off targets in the sensor’s Field of View (FoV). The reflections are received by the same PMUT after a short time delay, amplified by sensitive electronics, digitized, and further processed to produce the range to the primary target. Many algorithms can further process the range information for a variety of usage cases in a wide range of applications.The time it takes the ultrasound pulse to propagate from the PMUT to the target and back is called the time-of-flight (ToF). The distance to the target is found by multiplying the time-of-flight by the speed of sound and dividing by two (to account for the round-trip). The speed of sound in air is approximately 343 m/s. The speed of sound is not a constant but is generally stable enough to give measurement accuracies within a few percent error.DEVICE CONFIGURATIONA CH101 program file must be loaded into the on-chip memory at initial power-on. The program, or firmware, is loaded through a special I2C interface. Chirp provides a default general-purpose rangefinder (GPR) firmware that is suitable for a wide range of applications. This firmware enables autonomous range finding operation of the CH101. It also supports hardware-triggering of the CH101 for applications requiring multiple transceivers. Program files can also be tailored to the customer’s application. Contact Chirp for more information.CH101 has several features that allow for low power operation. An ultra-low-power, on-chip real-time clock (RTC) sets the sample rate and provides the reference for the time-of-flight measurement. The host processor does not need to provide any stimulus to the CH101 during normal operation, allowing the host processor to be shut down into its lowest power mode until the CH101 generates a wake-up interrupt. There is also a general-purpose input/output (INT) pin that is optimized to be used as a system wake-up source. The interrupt pin can be configured to trigger on motion or proximity.APPLICATIONSCHIRP CH101 DRIVERChirp provides a compiler and microcontroller-independent C driver for the CH101 which greatly simplifies integration. The CH101 driver implements high-level control of one or more CH101s attached to one or more I2C ports on the host processor. The CH101 driver allows the user to program, configure, trigger, and readout data from the CH101 through use of C function calls without direct interaction with the CH101 I2C registers. The CH101 driver only requires the customer to implement an I/O layer which communicates with the host processor’s I2C hardware and GPIO hardware. Chirp highly recommends that all designs use the CH101 driver.OBJECT DETECTIONDetecting the presence of objects or people can be optimized via software, by setting the sensor’s full-scale range (FSR), and via hardware, using an acoustic housing to narrow or widen the sensor’s field-of-view. The former means that the user may set the maximum distance at which the sensor will detect an object. FSR values refer to the one-way distance to a detected object.In practice, the FSR setting controls the amount of time that the sensor spends in the listening (receiving) period during a measurement cycle. Therefore, the FSR setting affects the time required to complete a measurement. Longer full-scale range values will require more time for a measurement to complete.Ultrasonic signal processing using the CH101’s General Purpose Rangefinder (GPR) Firmware will detect echoes that bounce off the first target in the Field-of-View. The size, position, and material composition of the target will affect the maximum range at which the sensor can detect the target. Large targets, such as walls, are much easier to detect than smaller targets. Thus, the associated operating range for smaller targets will be shorter. The range to detect people will be affected by a variety of factors such as a person’s size, clothing, orientation to the sensor and the sensor’s field-of-view. In general, given these factors, people can be detected at a maximum distance of 0.7m from the CH101 sensor.For additional guidance on the detection of people/objects using the NEMA standard, AN-000214 Presence Detection Application Note discusses the analysis of presence detection using the Long-Range CH201 Ultrasonic sensor.INTERFACING TO THE CH101 ULTRASONIC SENSORThe CH101 communicates with a host processor over the 2-wire I2C protocol. The CH101 operates as an I2C slave and responds to commands issued by the I2C master.The CH101 contains two separate I2C interfaces, running on two separate slave addresses. The first is for loading firmware into the on-chip program memory, and the second is for in-application communication with the CH101. The 7-bit programming address is0x45, and the 7-bit application address default is 0x29. The application address can be reprogrammed to any valid 7-bit I2C address. The CH101 uses clock stretching to allow for enough time to respond to the I2C master. The CH101 clock stretches before the acknowledge (ACK) bit on both transmit and receive. For example, when the CH101 transmits, it will hold SCL low after it transmits the 8th bit from the current byte while it loads the next byte into its internal transmit buffer. When the next byte is ready, it releases the SCL line, reads the master’s ACK bit, and proceeds accordingly. When the CH101 is receiving, it holds the SCL line low after it receives the 8th bit in a byte. The CH101 then chooses whether to ACK or NACK depending on the received data and releases the SCL line.The figure below shows an overview of the I2C slave interface. In the diagram, ‘S’ indicates I2C start, ‘R/W’ is the read/write bit, ‘Sr’ is a repeated start, ‘A’ is acknowledge, and ‘P’ is the stop condition. Grey boxes indicate the I2C master actions; white boxes indicate the I2C slave actions.Figure 5. CH101 I2C Slave Interface DiagramDEVICE MODES OF OPERATION:FREE-RUNNING MODEIn the free-running measurement mode, the CH101 runs autonomously at a user specified sample rate. In this mode, the INT pin is configured as an output. The CH101 pulses the INT pin high when a new range sample is available. At this point, the host processor may read the sample data from the CH101 over the I2C interface.HARDWARE-TRIGGERED MODEIn the hardware triggered mode, the INT pin is used bi-directionally. The CH101 remains in an idle condition until triggered by pulsing the INT pin. The measurement will start with deterministic latency relative to the rising edge on INT. This mode is most useful for synchronizing several CH101 transceivers. The host controller can use the individual INT pins of several transceivers to coordinate the exact timing.CH101 BEAM PATTERNSThe acoustic Field of View is easily customizable for the CH101 and is achieved by adding an acoustic housing to the transceiver that is profiled to realize the desired beam pattern. Symmetric, asymmetric, and omnidirectional (180° FoV) beam patterns are realizable. An example beam pattern is shown in the Typical Operating Characteristics section of this document and several acoustic housing designs for various FoV’s are available from Chirp.LAYOUT RECOMMENDATIONS:RECOMMENDED PCB FOOTPRINTDimensions in mmFigure 6. Recommended PCB FootprintPCB REFLOW RECOMMENDATIONS:See App Note AN-000159, CH101 and CH201 Ultrasonic Transceiver Handling and Assembly Guidelines.USE OF LEVEL SHIFTERSWhile the use of autosense level shifters for all the digital I/O signal signals is acceptable, special handling of the INT line while using a level shifter is required to ensure proper resetting of this line. As the circuit stage is neither a push-pull nor open-drain configuration (see representative circuit below), it is recommended that level shifter with a manual direction control line be used. The TI SN74LVC2T45 Bus Transceiver is a recommended device for level shifting of the INT signal line.Figure 7. INT Line I/O Circuit StageTYPICAL OPERATING CIRCUITSFigure 8. Single Transceiver OperationFigure 9. Multi- Transceiver OperationORDERING INFORMATIONPART NUMBER DESIGNATIONFigure 10. Part Number DesignationThis datasheet specifies the following part numbersPART NUMBER OPERATION PACKAGE BODY QUANTITY PACKAGING CH101-00ABR Pulse-Echo 3.5 mm x 3.5 mm x 1.26 mmLGA-8L 1,000 7” Tape and ReelCH101-02ABR Pitch-Catch 3.5 mm x 3.5 mm x 1.26 mmLGA-8L 1,000 7” Tape and ReelTable 6. Part Number DesignationCH101-xxABxProduct FamilyProduct Variant Shipping CarrierR = Tape & Reel 00AB = Pulse-Echo Product Variant02AB = Pitch-Catch Product VariantCH101 = Ultrasonic ToF SensorPACKAGE MARKINGFigure 11. Package MarkingTAPE & REEL SPECIFICATIONFigure 12. Tape & Reel SpecificationSHIPPING LABELA Shipping Label will be attached to the reel, bag and box. The information provided on the label is as follows:•Device: This is the full part number•Lot Number: Chirp manufacturing lot number•Date Code: Date the lot was sealed in the moisture proof bag•Quantity: Number of components on the reel•2D Barcode: Contains Lot No., quantity and reel/bag/box numberDimensions in mmDEVICE: CH101-XXXXX-XLOT NO: XXXXXXXXDATE CODE: XXXXQTY: XXXXFigure 13. Shipping LabelREVISION HISTORY09/30/19 1.0 Initial Release10/22/19 1.1 Changed CH-101 to CH101. Updated figure 7 to current markings.07/17/20 1.2 Format Update. Incorporated “Maximum Ratings Table” and “Use of LevelShifters” section.This information furnished by Chirp Microsystems, Inc. (“Chirp Microsystems”) is believed to be accurate and reliable. However, no responsibility is assumed by Chirp Microsystems for its use, or for any infringements of patents or other rights of third parties that may result from its use. Specifications are subject to change without notice. Chirp Microsystems reserves the right to make changes to this product, including its circuits and software, in order to improve its design and/or performance, without prior notice. Chirp Microsystems makes no warranties, neither expressed nor implied, regarding the information and specifications contained in this document. Chirp Microsystems assumes no responsibility for any claims or damages arising from information contained in this document, or from the use of products and services detailed therein. This includes, but is not limited to, claims or damages based on the infringement of patents, copyrights, mask work and/or other intellectual property rights.Certain intellectual property owned by Chirp Microsystems and described in this document is patent protected. No license is granted by implication or otherwise under any patent or patent rights of Chirp Microsystems. This publication supersedes and replaces all information previously supplied. Trademarks that are registered trademarks are the property of their respective companies. Chirp Microsystems sensors should not be used or sold in the development, storage, production or utilization of any conventional or mass-destructive weapons or for any other weapons or life threatening applications, as well as in any other life critical applications such as medical equipment, transportation, aerospace and nuclear instruments, undersea equipment, power plant equipment, disaster prevention and crime prevention equipment.©2020 Chirp Microsystems. All rights reserved. Chirp Microsystems and the Chirp Microsystems logo are trademarks of Chirp Microsystems, Inc. The TDK logo is a trademark of TDK Corporation. Other company and product names may be trademarks of the respective companies with which they are associated.©2020 Chirp Microsystems. All rights reserved.。

低功耗mems气体传感器原理

低功耗mems气体传感器原理

低功耗mems气体传感器原理英文回答:Low-power MEMS gas sensors are a type of sensor that detects the presence of a gas by measuring its physical properties. They are typically made of a MEMS (microelectromechanical systems) device that is coated with a material that is sensitive to the gas being detected. When the gas comes into contact with the material, it causes a change in the material's electrical properties, which can be measured by the MEMS device.There are a number of different types of low-power MEMS gas sensors, each of which is designed to detect a specific gas. Some of the most common types of low-power MEMS gas sensors include:Metal oxide semiconductor (MOS) sensors are the most common type of low-power MEMS gas sensor. They are made of a metal oxide semiconductor material that is coated with acatalyst. When the gas comes into contact with the catalyst, it causes the material to change its electrical resistance. The change in resistance can be measured by the MEMS device, which can then be used to determine the concentration ofthe gas.Capacitive sensors are another type of low-power MEMS gas sensor. They are made of two metal plates that are separated by a dielectric material. When the gas comes into contact with the dielectric material, it causes the capacitance between the plates to change. The change in capacitance can be measured by the MEMS device, which can then be used to determine the concentration of the gas.Optical sensors are a third type of low-power MEMS gas sensor. They are made of a light source and a photodetector. When the gas comes into contact with the light source, it causes the light to change its intensity. The change in intensity can be measured by the photodetector, which can then be used to determine the concentration of the gas.Low-power MEMS gas sensors are used in a variety ofapplications, including:Industrial safety.Environmental monitoring.Medical diagnostics.Food safety.Automotive emissions control.Low-power MEMS gas sensors are a rapidly growing market, as they offer several advantages over traditional gas sensors. These advantages include:Low power consumption.Small size.High sensitivity.Low cost.As the market for low-power MEMS gas sensors continues to grow, it is likely that these sensors will become increasingly common in a variety of applications.中文回答:低功耗MEMS气体传感器是一种通过测量气体的物理性质来检测气体存在类型的传感器。

新型的波导矩阵光开关

新型的波导矩阵光开关

第16卷第11期2008年n月光学精密工程OpticsandPrecisionEngineeringV01.16No.11NOV.2008文章编号1004—924X(2008)11-2098—06新型的波导矩阵光开关张鹰1’2(1.中国科学院长春光学精密2.中国科学院研究生院,北京100039;3.,孙德贵3,金光1机械与物理研究所,吉林长春130033;长春理工大学光电工程学院,吉林长春130022)摘要:为了实现波导矩阵光开关一对多,多对多的通信方式。

设计了一种新型的多路可用波导矩阵光歼关。

在分析马赫一曾德尔下涉仪(MZI)基本结构的基础上,定义了两种开关形式。

以二者作为结构单元,没计了2×2、4×4矩阵光开关结构以实现1:是(是>1)多路连接的功能。

分析了Banyan网络中交叉连接损耗与交叉角度的关系,对MZI结构进行了性能模拟和优化,并由此对整个开关的插入损耗进行了分析。

最后,基于PLC技术制作出相应的MZI开关单元及2×2,4×4波导Si02光开关实物。

测试结果表明,2×2光开关的插入损耗为2.25dB,4×4光开关的插入损耗为4.3dB,开关时间均<1ms,该类光开关能够很好地实现多路开关的功能。

关键词:集成光学;Banyan网络;波导矩阵;光开关;氧化硅波导中图分类号:TN256文献标识码:AAnewtypeofopticalwaveguidematrixswitchZHANGYin91~,SUNDe—gui3,JINGuan91(1.ChangchunInstituteofOptics。

FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130033,China;2.GraduateUniversityofChineseAcademyofSciences,Beijing100039,China;3.SchoolofOptoelectricalEngineering,ChangchunUniversityofSciencesandTechnology,Changchun130022。

光开关

光开关

光开关是较为重要的光无源器件,在光网络系统中可对光信号进行通断和切换。

光开关在光分/插复用(OADM)、时分复用(TDM)、波分复用(WDM)中有着广泛的应用。

光开关以其高速度、高稳定性、低串扰等优势成为各大通信公司和研究单位的研究重点。

光开关有着广阔的市场前景,是最具发展潜力的光无源器件之一。

一、光开关与全光网络近几年,随着远程通信和计算机通信的飞速发展,特别是Internet/Intranet业务的爆炸式崛起,传统的基于电子领域的传输系统已难以满足日益增加的业务需要。

密集波分复用(DWDM)技术利用单模光纤的低损耗窗口,在一根光纤中同时传输多路波长载波,并采用掺铒光纤放大器(EDFA)来取代传统的光电中继系统。

不但在不增加光纤的基础上使容量成倍增加,还摆脱了由于光电转换过程中“电子瓶颈”所带来的单根光纤传输速率制约。

因而被认为是提高光纤通信容量的一种有效途径,如图1所示。

从图2中我们看到,光交叉连接器(OXC)和光上/下路复用器(OADM)是全光网络的关键。

OADM和OXC可以管理任意波长的信号,从而更充分地利用带宽。

而且,环状网络拓扑结构增强了WDM设备的可靠性以及数据的生存性。

光交叉连接矩阵是OXC的核心,它要求无阻塞、低延迟、宽带和高可靠性,并且要具有单向、双向和广播形式的功能,如图3所示。

而光开关又是光交换和光互连中最基本的器件,它的性能、价格将直接影响到OXC系统的商用化进程。

二、光开关概述目前,在光传送网中各种不同交换原理和实现技术的光开关被广泛地提出。

不同原理和技术的光开关具有不同的特性,适用于不同的场合。

依据不同的光开关原理,光开关可分为:机械光开关、磁光开关、热光开关、电光开关和声光开关。

依据光开关的交换介质来分,光开关可分为:自由空间交换光开关和波导交换光开关。

机械式光开关:机械式光开关发展已比较成熟,可分为移动光纤、移动套管、移动准直器、移动反光镜、移动棱镜和移动耦合器。

Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计

Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计

第30卷 第5期2007年10月电子器件Ch inese Jou r nal Of Elect ro n DevicesVol.30 No.5Oct.2007Electr omechanical Design of Low 2Dr iven Volta ge Capacit ive SwitchesB ased on K a 2B an k Distr ibuted M EMS Phase Shif ter s 3H E X un 2j un1,2,WU Qu n 1,J I N B o 2sh i 1,SO N G M in g 2x i n 2,YI N J i n g 2h ua21.S chool of El ect ronics and In f ormati on Technol og y ,Harbi n Inst it ut e of Technol og y ,Harbi n 150001,Chi na;2.S chool of Ap pl ied S ciences ,Harbi n Univers it y of Science and Technolo gy ,Harbi n 150080,ChinaAbstract :The R F MEMS capaciti ve swi tche s have de monst rated great pot enti al i n microwave phase shift ersand millimete r 2wave circuit s and devices due t o t heir very low lo ss ,low power consumption ,and low co st cha racteristics.To reduce t he driven 2vol tage of switches based on K a band di st ri but ed M EMS pha se shift 2ers ,t he mec hanical desi gns of different low spri ng 2constant hi nge beam st ruct ure a re p re se nt ed.The dis 2pl acement dist ribut io n ,driven volt age ,mechanical modes and R F performance of t he swit ches usi ng t he se bea ms are a nal yzed by using Intelli Sui te TM a nd ADS sof t ware si mulation tool.The result s demonst rate t hat for t he st ruct ure of beam2swit ch ,t he dri ven volta ge i s 3V ,t he nat ural frequencies of all modes are more t han 31k Hz ,t he insertion lo ss a nd ret urn loss are 0.082dB ,18.6dB at 35GHz ,re spect ively.At sa me t ime ,t he pha se shif t of 105.9o is obtaine d.K ey w or ds :MEMS pha se shift ers ;capaciti ve swi tches ;low dri ven 2volt age ;elect ro mechanical perfor mance ;RF performance EEACC :1250;2570K a 波段分布式MEM S 移相器低驱动电平容性开关的机电设计3贺训军1,2,吴 群1,金博识1,宋明歆2,殷景华21.哈尔滨工业大学电子与信息技术研究院,哈尔滨150001;2.哈尔滨理工大学应用科学学院,哈尔滨150080收稿日期6223基金项目国家自然科学基金资助项目(656);哈尔滨工业大学跨学科交叉性研究基金资助(I T MD 3)作者简介贺训军(2),男,博士生,主要研究方向为R F M MS 器件设计与封装,x j @;吴 群(552),男,教授,博士生导师,主要研究方向为微波毫米波器件与电路,q @摘 要:为降低K a 波段分布式M EMS 移相器容性开关的驱动电压,提出不同形状新型低弹性系数铰链梁结构M EMS 电容开关的机电设计概念.采用IntelliSuite TM 和ADS 软件分析了三种梁结构M EM S 电容开关的位移分布、驱动电压、机械振动模式和射频性能等参数,结果表明:所设计新型bea m2结构MEMS 电容开关具有优越的机电特性和射频特性,即开关的驱动电压为3V ,机械振动模式固有频率都大于31kHz ,在35GHz 处插入损耗和回波损耗分别为0.082dB 和18.6dB ,而相移量可达到105.9o .关键词:M EM S 移相器;电容开关;低驱动电压;机电特性;射频特性中图分类号:TN 304 文献标识码:A 文章编号:100529490(2007)0521835204 随着射频微电子机械系统(R F M EMS )技术的发展,R F MEMS 开关和器件在毫米波频段显示出低插入损耗、高隔离度、频带宽、成本低、超小型化、易于与IC 、M M IC 电路集成等优点.因此,采用MEMS 开关和器件与传输线相结合构成移相器来实现电子移相扫描控制相阵天线成为研究热点.传统移相器通过半导体开关来改变信号传输的路径,从而使其获得附加相移,但是存在高插入损耗、较低:200101:07102H .200.07:1977E he un un 19/wu hit.e .的额定功率、占用的面积较大,集成度低等缺点.本文采用的方法是通过改变传输信号的传播常数来实现相移,它的基本工作原理是在共面波导传输线上周期加载MEMS金属桥,通过在金属桥和传输线之间施加电压改变金属桥高度,从而改变金属桥与传输线之间的电容和信号在传输线中的传播常数.因此可以得到改变入射波相移的分布式MEMS移相器(图1所示),它具有低插入损耗、低成本、微小尺寸和IC兼容等优点,在微波单片集成电路、卫星导航和相阵天线中被认为是最有吸引力的器件之一[122].RF MEMS开关作为分布式MEMS移相器的关键模块,其性能好坏直接决定分布式MEMS移相器性能指标.通常所采用的开关为并联式电容开关,驱动开关所需力可以通过静电、电磁和热等方式获得[324].到目前为止,只有静电驱动型MEMS电容开关具有高可靠性和实用性,但该类型开关仍有一些问题需待解决,例如驱动电压过高(20280V),导致功耗过大,而无法应用于低供电电压的场合[5].目前,国内外有许多关于高驱动电压MEMS电容开关的报道[3,527],低驱动电压开关的研究报道非常少,而适合于Ka波段分布式MEMS移相器的低驱动电压开关就更少.因此,本研究为了降低K a波段分布式MEMS移相器电容开关的驱动电压,提出不同形状新型低弹性系数铰链梁结构的机电设计.(a)up状态 (b)down状态图1 分布式MEMS移相器两种工作状态1 模型表征及静态分析1.1 电容开关机械模型静电驱动电容开关的机械模型为在共面波导信号线上方悬挂双端固定有效弹性系数为k、有效面积为A的MEMS金属梁,而金属梁和信号线分别作为开关的上下两电极,如图2所示.为了避免上下电极接触而短路,在下电极信号线上淀积一层厚度为d0、介电常数为εr绝缘层,上电极和介质层之间的空气缝高度(MEMS梁高度)为g0.当下电极未加载电压时,开关处于导通状态;而当下电极加载电压为V,由于受到静电力作用,上电极将向下运动与介质接触,使开关闭合处于短路状态图2 双端固定M EMS梁开关的简化模型1.2 驱动电压函数描述采用静态分析方法对R F MEMS开关进行分析,对于电压驱动开关总势能U为[8]:U=12kz2-12ε0AV2g0+d0εr-z(1)其中:z为MEMS桥偏离平衡位置的位移.当开关加载驱动电压时,开关的M EMS梁将向下运动.为了维持系统在给定的状态,所需的反作用力F 可以通过总势能在运动方向偏微分获得,即: F=9U9z=kz-12ε0AV2(g0+d0εr-z)2(2)系统的平衡状态是指反作用力消失时状态,即:F=kz-12ε0AV2(g0+d0εr-z)2=0(3)平衡状态的稳定度可以通过系统的刚度K来确定,即:K=9F9z=1-ε0AV2(g0+d0εr-z)2(4)将平衡方程(3)代入(4)可得:K=1-2kz(g0+d0εr-z)(5)从上式可知,当K>0时系统处于稳定平衡状态,K<0时系统处于不稳定平衡状态,K=0时系统处于临界状态,而临界状态就是静电力迅速下拉MEMS梁的状态,可得驱动电压为:V p=8kg0(g0+d0εr)227ε0A≈8kg3027ε0A(6)其中有效弹性系数k取决于金属梁的几何尺寸和所采用材料的杨氏模量.2 低驱动电压开关设计从方程(6)可知,MEMS电容开关驱动电压主要与双端固定梁的有效弹性系数k、空气缝隙高度g0和有效面积有关为了降低驱动电压,本文主要进行低有效弹性系数设计研究,从而设计出三种不同形状铰链的梁结构,它们分别是由形状不同、宽度和长度分别为6381电 子 器 件第30卷.A.10μm和70μm铰链支撑中心面积为A(W CPW3w beam=100μm3100μm2)的梁结构,如图3所示.(a)bea m1(b)beam2(c)bea m3图3 三种不同铰链形状的梁结构3 低驱动电压开关特性分析本文采用Int elli suit e TM和ADS软件分析具有上述结构的MEMS电容开关位移分布、驱动电压、机械振动模式和射频性能.当电容开关梁的长度、厚度和高度分别为l=240μm,t0=0.4μm、g0=2.5μm,以及开关长度为300μm时,位移分布、驱动电压和射频性能的模拟结果如图4~图6所示,而机械振动模式表1所示.3.1 低驱动电压开关位移分析图4分别为bea m1、beam2和bea m3电容开关(a)bea m1(b)beam2()3图 三种不同梁结构开关的局部位移在down状态下的局部位移图.从图中可知,当电压增大到驱动电压时,支撑梁结构的铰链发生弯曲,从而使梁结构的矩形面积与共面波导信号线完全接触.此时,MEMS梁的应力在铰链两端固定处最大,从两端固定处向中间逐渐减小,中间接触位置处最小.如果加载驱动电压超过材料可承受强度时,在铰链两端固定处容易发生断裂,使MEMS开关发生断裂失效.因此,设计开关时,为了避免开关驱动电压过高和失效,梁的高与长之比不能过大.3.2 低驱动电压开关电压分析图5为加载电压与开关的位移关系图,加载电压小于驱动电压时,梁偏离平衡位置的位移都很小;而当电压增大到驱动电压时,梁偏离平衡位置的位移突然增大,迅速与共面波导信号线接触.从模拟结果可得,beam1、beam2和bea m3的驱动电压分别为5V、3V和1.5V.表明通过改变支撑梁结构的铰链形状可以明显降低梁结构的有效弹性系数和驱动电压,这与理论非常吻合.但是,为了降低驱动电压不能过多地增加铰链的折叠数,目的是避免梁的恢复力太小而不能使梁恢复到平衡位置,导致MEMS开关黏附失效.图5 三种不同梁结构开关的位移与驱动电压3.3 低驱动电压开关机械振动模式分析为了优化MEMS电容开关的机械性能,采用Int ellis ui te TM软件对三种梁结构的机械振动模式进行分析,模拟结果见表1.表1 三种不同梁结构开关的机械振动模式str uct ure1st mode2nd mode3rd modeF/k Hz Dir.F/k Hz Dir.F/k Hz Dir.beam1136.42Z216.82X401.24Ybeam230.874Z34.789X56.534Ybeam312.953Z13.462X23.284Y 其中Z表示沿z轴方向振动,而X和Y分别表示绕x轴和y轴方向转动.从表1可知,梁主要以沿z轴方向机械振动第一种模式为主,而其他方向振动模式发生几率很小,并且所有振动模式的固有频率都大于3z3 低驱动电压开关的射频特性分析为了分析三种不同结构的M MS电容开关的射7381第5期贺训军,吴 群等:K a波段分布式M EMS移相器低驱动电平容性开关的机电设计c bea m41kH..4E频性能,本文采用ADS 软件对三种不同形状梁结构电容开关在K a 波段的插入损耗、回波损耗和相移量进行分析,结果如图6所示.图6中的(a )、(b )、(c )分别为三种不同形状梁结构开关在20~50GHz 时插入损耗、回波损耗和相移量随频率变化曲线,结果表明:beam 2结构表现出优越的射频性能,在频率为35GHz 处插入损耗和回波损耗分别为0.082dB 和18.6dB ,而相移量达到105.9o /0.3mm.(a)三种不同梁结构开关的插入损耗(a )三种不同梁结构开关的回波损耗(a )三种不同梁结构开关的相移图6 三种不同梁结构开关的射频特性4 讨论从上面分析可知,如果采用等宽度平面梁bea m 1,它具有优越的机械特性,其固有频率大于136k Hz ,不易受外界的干扰.但是它的射频特性比较差,驱动电压比较高,而失去实用价值,因此必须采用更优化的平面结构.如采用beam 3结构,由于弹性梁的有效长度增长,其等效弹性系数变小,根据式(6)可知驱动电压降低,与模拟结果相吻合.但是这种结构也会引入大的电感分量,而其等效电感分量随着弹性梁结构变细和变长而增大该分量在设计开关时可以提高在Ka 频段的隔离度,但对K a 波段分布式MEMS 移相器的相移量有明显的影响,使相移量变小,而它对插入损耗和回波损耗基本不影响(如图6所示).同时由于弹性梁的有效长度增长使得其恢复力和机械固有频率降低,容易导致黏附失效和抗外界机械干扰能力不强.综合分析beam2的机电特性和射频特性可得,它不仅具有优越的机电特性,而且也具有优越的射频特性.5 结论随着MEMS 电容开关广泛地应用在微波毫米波电路和器件中,通常其驱动电压对电路和器件性能有重要影响.通过分析应用于高频的静电驱动R F MEMS 电容开关的模型和工作原理,提出通过设计低弹性系数铰链来降低开关驱动电压的机电设计思想,设计出三种不同铰链形状梁结构.采用In 2telli Suit e TM 和ADS 模拟工具分析三种低弹性系数铰链梁结构电容开关的机电特性和射频特性,结果表明:如果梁结构的铰链形状设计得当,可以保证较好的机电特性和射频特性.参考文献:[1] Pill an s B ,Eshelman S ,and Malczewski A ,et al.X 2Band R FMEMS Phase Shift ers for Phased array Ap plicat ions [J ].IE EE Microwave and Gui ded Wave L et t ers ,1999;9(5):5172519.[2] K i m M ,Hacker J B ,and Mi hailovich R E ,et al.A dc 2to 240GHz four 2bit R F MEMS True 2Ti me Del ay Net work [J ].IE EE Microwave and W i rel es s Component s Let t er s ,2001;11(8):56258.[3] Gold sm i t h C L ,Es hel m an S an d Dennist on D.Perfo rmance ofLow 2Lo ss R F M EM S Capaci ti ve Swit ches [J ].IEEE Mi cro 2wave and Gui ded Wave Lett ers ,1998;8(6):2692271.[4] Hyman D and Mehregany M.C ont act Physics of G ol d Mi cro 2co ntact s fo r M EMS Swi tches[J ].IEEE Transact ions on Com 2ponent s and Packagi ng Technology ,1999,22(8):3572364.[5] Rebeiz G M and Mul davi n J B.R F M EMS Switches and S wi tchC ircui t s[J ].IEEE Microwave Magazi ne ,2001,45:59271.[6] Mi ao M ,Xi ao Z Y and Wu G Y.Capacit ive R F MEMS Swi tchwit h Composit e Beam[C ].Proceeding s of SPIE ,2002,4928:2482252.[7] Zhang H X ,Hao Y L and Xi ao Z Y.Desi gn of a Novel B ul kMicro 2Machined R F M EMS Swit ch [C ]//t he Int ernat ional C onference o n Mico and Nano System s ,2002:2412245.[8] El at a D and Leus V.Swit chi ng ti m e ,Im p act Veloci t y and R e 2lease Respon s e ,of Vol tage and Charge Dri ven El ect ro stati c Swi tches[C ]//ICMENS ,2005:118921192.8381电 子 器 件第30卷.。

模拟开关和多路复用器常见问题解答

模拟开关和多路复用器常见问题解答

模拟开关和多路复用器常见问题解答声明Analog Devices公司拥有本文档及本文档中描述内容的完整知识产权(IP)。

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其他技术支持资料以及相关活动请访问以下技术支持中心网页/zh/content/ADI_CIC_index/fca.html.Analog Devices, Inc.版本历史版本日期作者描述1.0 2013/9/7 CAC(XS)文档新建目录版本历史 (II)目录 (III)第1章简介 (4)1.1产品简介 (4)1.2参考资料 (5)第2章模拟开关基础 (6)第3章常见应用问题解答 (8)3.1 使用模拟开关时,会带来哪些直流误差? (8)3.2使用模拟开关时,会带来哪些交流误差? (9)3.3模拟开关的建立时间和开关时间代表什么? (14)3.4在使用电子开关设置运放增益时,怎样减小模拟开关的导通电阻所带来的误差? (14)3.5什么条件会导致模拟开关的闩锁? (17)3.6模拟开关可以驱动的电容大小是多少,或者说其输出端的走线长度有要求吗? (20)3.7当数字控制口悬空时,电子开关的输入处在什么状态,会切换到固定的通道吗? (20)3.8模拟电子开关可否用来传输4-20mA电流信号? (20)3.9模拟电子开关的输入信号大小怎么确定? (20)3.10模拟电子开关在没有上电的情况下其输入输出通道是什么状态? (21)3.11模拟电子开关有没有大电流导通能力的,可以应用在切断电源上的电子开关? (21)3.12电子开关是不是都是双向导通的? (21)第1章简介1.1 产品简介在要求针对模拟信号控制和选择指定传输路径的电子系统的设计中,模拟开关和多路复用器已成为必要元件之一。

基于MEMS工艺的安全起爆芯片

基于MEMS工艺的安全起爆芯片

火工品INITIATORS&PYROTECHNICS文章编号:1003-1480(2020)06-0010-04基于MEMS工艺的安全起爆芯片薛艳1,刘云2,任炜1,任小明1,刘兰1(1.陕西应用物理化学研究所应用物理化学重点实验室,陕西西安,710061;2.北方特种能源集团有限公司,陕西西安,710061)摘要:针对MEMS火工品低能化带来的安全性问题,设计了一种基于MEMS工艺的安全起爆芯片,采用MEMS 工艺制作了Ni-Cr换能元层、绝缘层、导线层,一体化集成了含平面开关的安全起爆芯片;通过对形貌、表面粗糙度、厚度等进行表征分析,确定了结构参数,并对安全起爆芯片性能进行了测试。

结果表明MEMS平面开关实现了通断转换,可以提高安全起爆芯片的安全性。

本研究为MEMS火工品安全性技术提供支撑。

关键词:安全起爆芯片;MEMS技术;Ni-Cr换能元;性能测试中图分类号:TJ45+9文献标识码:A DOI:10.3969/j.issn.1003-1480.2020.06.003Research on Safe Detonation Chip Based on MEMS TechnologyXUE Yan1,LIU Yun2,REN Wei1,REN Xiao-ming1,LIU Lan1(1.Science and Technology on Applied Physical Chemistry Laboratory,Shaanxi Applied Physics and Chemistry ResearchInstitute,Xi’an,710061;2.North Special Energy Group Co.Ltd.,Xi'an,710061)Abstract:Aiming at the safe problem followed by the low energy of MEMS pyrotechnic,a safe detonation chip based on MEMS process was designed.The Ni-Cr heater,insulating layer and circuit layer were made by MEMS process,and the safe detonation chip with planar switch was integrated.The performance analyses of morphology,surface roughness,thickness,etc.were carried out,then the structural material parameters were determined,meanwhile,the performance of the safe detonation chip were tested.The results show that the MEMS switch realizes the on-off conversion,so the safety of the safe detonation chip can be improved.The study provides support for the safety technology of MEMS pyrotechnic products.Key words:Safety detonation chip;MEMS technology;Ni-Cr heater;Performance testMEMS火工品(MEMS Pyrotechnics)是将MEMS 技术、微纳米材料技术与火工品技术相结合的产物,其特点为换能结构和药剂结构尺度在微米量级,核心器件尺度在亚毫米量级,系统尺度在毫米量级的火工品[1-2]。

卡洛洛·加維茲工業有限公司 PD30ETPR60BPxxIO 反射式多极光學传感器说明书

卡洛洛·加維茲工業有限公司 PD30ETPR60BPxxIO 反射式多极光學传感器说明书

PD30ETPR60BPxxIO - IO-LinkPhotoelectric Retro-reflective Polarized sensors with IO-Link communicationDescriptionThe PD30ETPR60BPxxIO stainless steel sensors are built with high-quality materials and designed for harsh environments.They are designed for use in environments where high-pressure cleaning, cleaning agents and disinfectants are used on a daily basis.The strong stainless steel (AISI316L) together with high-quality plastic materials like PEEK, PPSU, and PES sealings of FKM ensure a safe and excellent mechanical resistance.The sensor housing has the IP69K rating as well as approval by ECOLAB for cleaning and disinfection agents.The compact sensor design is ideally suited to confined spaces.Benefits• Retro-reflective Polarized sensor with IO-Link with a adjustable distance of 1.7 to 6 m, either by trimmer or via IO-Link.• Application functions: Pattern Recognition, Speed & Length, Divider function and Object & Gap Monitoring.• Neighbour Immunity , selectable up to 3 sensors• Easy customization to specific OEM requests by use of the build in IO-Link functionalities.• The output can be operated either as a standard switching output or in IO-Link mode.• Fully configurable via output IO-Link v 1.1. Electrical outputs can be configured as PNP / NPN / Push-Pull / External input, normally open or normally closed.• Timer functions can be set, such as ON-delay, Off-delay, and one shots.• Logging functions: Temperatures, detecting counter, power cycles and operating hours.• Detection modes Single point, two point and windows mode.• Logic functions: AND, OR, XOR and Gated SR-FF.• Analogue output: In IO-Link mode the sensor will generate 16 bit analogue process data output representing various selectable process data such as received signal level.• ApplicationsPattern Recognition : An easy way to verify that a product is manufactured to the specification e.g. Furniture production where tabs or holes has to be with a defined pattern.Speed and Length : Monitor the speed and length of an object on a conveyour for e.g. sorting on size.Divider function : A de-central counting function that gives a signal when a preset count level is reached e.g. when a certain items are packed in a carton box it ask for a new box.Object and Gap Monitoring : Function that can sort out good objects and gaps between them so e.g. a packaging machine only reveive objects with the correct size and gaps.PD30ETPR60BPxxIO - IO-LinkMain functions• Detects presence or absence of objects that cut off the light from the emitter• Detects all opaque objects very reliably• The sensor can be operated in IO-Link mode once connected to an IO-Link master or in standard I/O mode.• Received light intensity as process data.• Neighbor inference protection.• Sensing distance by potentiometer, teach by wire or by IO-link parameter.• Quality of Run and Quality of Teach result.• Temperature date for preventive maintenance.• Front-end check for preventive maintenance.Adjustable parameters via IO-Link interface:• Sensing distance and hysteresis.• Sensing modes: single point or two point or window mode.• Timer functions, e.g.: On-delay, Off delay, One shot leading edge or trailing edge.• Logic functions such as: AND, OR, X-OR and SR-FF.• External input.• Logging functions: Maximum temperatures, minimum temperatures, operating hours, operating cycles, power cycles, minutes above maximum temperature, minutes below minimum temperature, etc.• Auto hysteresis• Special functions: Pattern Recognition, Speed & Length, Divider function and Object & Gap Monitoring. ReferencesProduct selection keyEnter the code option instead ofType selectionStructureA BD CEF A B DCEGFig. 1 CableFig. 2 PlugFig. 3"M8-plug" Pin numbersSensingDetectionApplication functionsPattern RecognitionSpeed and LengthDivider functionObject and Gap MonitoringAlarm settingsDetection diagramCD-11.8-7.9-3.903.97.911.83979118158197236276315AccuracyExcess gainC0.00 0.04 0.39FeaturesPower SupplyAuto adjustInput selectorLogic functionsTime delaysOutputsOperation diagramFor default factory sensor Tv = Power-ON delayResponse timesIndication*See operation diagramLED indicationEnvironmental1)Do not bend the cable in temperatures below-10°C2)With no icing or condensationEMCDiagnostic parametersEvents ConfigurationObservation menuProcess data structure4 Bytes, Analogue value 16 ... 31 (16 bit)Mechanics/electronicsConnectionWiringABHousingDimensionsFig. 4 CableFig. 5 PlugCompatibility and conformity Approvals and markings(UL508) IO-LinkDelivery contents and accessoriesDelivery contents• Photoelectric switch: PD30ETPR60BPxxIO• Screwdriver• Packaging: Plastic bagAccessories• Mounting bracket: APD30-MB1 or APD30-MB2 to be purchased separately• Connector type: CO..54NF-..W series to be purchased separatelyFurther informationCOPYRIGHT ©2021Content subject to change. Download the PDF: 。

瓦特斯托珀 DT-300 系列双重技术天花板传感器说明书

瓦特斯托珀 DT-300 系列双重技术天花板传感器说明书

PROJECT LOCATION/TYPE 800.879.8585DT-300 Series Dual Technology Ceiling Sensors• Advanced control logic based on RISC microcontroller provides: • Detection Signature Processing eliminates false triggers and provides immunity to RFI and EMI • Walk-through mode turns lights off threeminutes after the area is initially occupied – ideal for brief visits such as mail delivery • Available with built-in light level sensor featuring simple, one-step setup • Sensors work with low-voltage momentary switches to provide manual controlThe DT-300 Series Dual Technology CeilingSensors combine the benefits of passive infrared (PIR) and ultrasonic technologies to detect occupancy. Sensors have a flat, unobtrusiveappearance and provide 360 degrees of coverage.Auto SetOperationLow voltage DT-300 Series sensors utilize a WattStopper power pack to turn lights on when both PIR and ultrasonic technologies detectoccupancy. They can also work with a low voltage switch for manual-on operation. PIR technology senses motion via a change in infrared energy within the controlled area, whereas ultrasonicuses 40KHz high frequency ultrasound. Once lights are on, detection by either technology holds them on. When no occupancy is detected for the length of the time delay, lights turns off. DT-300 Series Sensors can also be set to trigger lights on when either technology or both detect occupancy, or to require both technologies to hold lighting on.DescriptionProduct OverviewFeatures• Patented ultrasonic diffusion technology spreads coverage to a wider area• LEDs indicate occupancy detection • Uses plug terminal wiring system for quick andeasy installation • Eight occupancy logic options provide the ability to customize control to meet application needs • Available with isolated relay for integration with BAS or HVAC • Qualifies for ARRA-funded public works projects The DT-300 requires no adjustment at installation. Auto set continuously monitors the controlled space to identify usage patterns. Based on these patterns, the unit automatically adjusts time delay and sensitivity settings for optimal performance and energy efficiency. Sensors assigns shortdelays (as low as five minutes) for times when the space is usually vacant, and longer delays (up to 30 minutes) for busier times.ApplicationDT-300 Series Dual Technology Sensors have the flexibility to work in a variety of applications, where one technology alone could cause false triggers. Ideal applications include classrooms, open office spaces, large offices and computer rooms. The DT-300 Series mounting system makes them easy to install in ceiling tiles or to junction boxes, providing the flexibility to be used in a wide range of spaces.Plug terminal wiring for quick and easy installationArchitecturally appealing low-profile appearance Accepts low-voltage switch input formanual-on operationWalk-through modeincreases savings potentialAuto set automatically selects optimal settings for each spaceUltrasonic diffusers give more comprehensive coverageAutomatic or manual-on operation when used with a BZ-150 Power PackWiring & MountingControls & SettingsCoveragePub. No. 14907 rev.10/2009Ordering InformationSpecifications。

mems代工光通信

mems代工光通信

mems代工光通信## MEMS Foundry for Optical Communications.Micro-electro-mechanical systems (MEMS) is a technology that combines electrical and mechanical components on a silicon substrate. MEMS devices are typically very small, ranging in size from a few microns to a few millimeters. They can be used for a variety of applications, including optical communications, sensors, and actuators.MEMS devices are becoming increasingly popular in optical communications because they offer a number of advantages over traditional optical components. MEMS devices are smaller, lighter, and more energy-efficient than traditional optical components. They are also more robust and reliable.MEMS devices are used in a variety of optical communications applications, including:Optical switches.Optical modulators.Optical filters.Optical amplifiers.Optical sensors.MEMS devices are expected to play an increasingly important role in optical communications in the years to come. As the demand for bandwidth continues to grow, MEMS devices will be essential for providing the necessary speed, capacity, and reliability.中文回答:## 光通信中的MEMS代工。

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LOW POWER 3D MEMS OPTICAL SWITCHESJohn BowersDirector, Institute for Energy EfficiencyUCSB, Electrical & Computer Engineering Department, Santa Barbara, CA 93106Invited Talk at 2009 IEEE/LEOS International Conference on Optical MEMS and NanophotonicsAbstract: Optical switching is a low power, low cost solution to the need for higher capacity switching. We review optical architectures and review interesting design aspects of 3D MEMS switches and their impact on overall switch performance.1. IntroductionVideo and data transmission are growing exponentially, with a doubling time on the order of one year[1]. This is driven by widespread broadband and FTTH deployments. The amount of electrical power required to switch this information is growing exponentially and is becoming a significant (>1%) amount of electrical power consumed in many advanced countries[2]. Optical switches are an important solution to this problem because the power required to switch data is typically 1000 times less if high speed electrical switching and OEO conversion are avoided. Fig. 1 shows the five order of magnitude difference in different technologies[2].Fig. 1. Energy per bit required in different switch technologies [2]. Another advantage of using optical switches is the scalability to reconfigurable mesh networks, with the resultant improvement in system reliability and flexibility Optical switches have a capacity of at least 32 Tbit/s (320 fibers at 100 Gbit/s each) requiring a power of on the order of 1 W, and a size of 0.001 m 3 [3]. This results in capacity/power and capacity/size metrics on the order of 32 Tbit/s/W and 32,000 Tbit/s/m 3. These are 100 to 1000 times better than electrical core switching, but at the expense of switch granularity and switching speed. The important issue is whether theability to switch packets or subwavelength switch is worth the extra power, weight, size and cost. Optical switches have lower power because they are typically capacitor driven (e.g. electrostatic MEMS mirrors with 100 nA leakage current) and because each individual bit is not being examined and switched, but rather, a stream of packets or even a grouping of wavelengths is being switched.There are a variety of applications for optical switches in fiber optic networks ranging from fiber switching to waveband switching to wavelength switching. These may be done in a single switch, or in multiple switches, depending on the number of ports required(Fig. 2). This figure shows the separation of optical bypass and optical switching from subwavelength switching in the service layer.DCS or OEO SwitchSTS-n Transparent Switching (GBE, FC,Wave Services)ATMIP-Grooming-Wave shifting -Amplets -Xponders -OPMWavelength Switching Waveband Switching Fiber SwitchingFig. 2. Separation of transport switching (fiber, waveband and wavelength from subwavelength service layer switching.2. Optical Switch ScalingOptical switches tend to scale well as transmission capacity increases due to their transparent switching. This is illustrated in Fig. 3. A switch that was installed to carry 2.5 Gbit/s data can be upgraded to 10 Gbit/s and to multiple wavelengths, resulting in a growth in152ThB1 (Invited)10:30 AM – 11:00 AM978-1-4244-2382-8/09/$25.00 ©2009 IEEEcapacity by three orders of magnitude without expense as the transmission capacity increases and the switchingwavelength 2.5 Gbit/s switching) as the capacity of an optical switch is increased.Planar 2D optical switches are typically composed of 2x2 switches in a crossbar configuration, and so a nonblocking switch requires N 2 switches, as illustrated in Fig. 4. Planar switches are typically 32x32 or less, because of quadratic dependence on port count. 3D switches (Fig. 5) have been developed to solve this scaling bottleneck[3]. These approaches utilize just 2N switch elements for a nonblocking switch with low loss (Fig. 6). Consequently, large switch arrays of 320 ports and higher have been demonstrated using MEMS technology[4]. 3D switches can also be implemented using individual collimators that can be angled to pointat each other.2000400060008000110420406080100120N u m b e r o f P o r ts2D3DFig. 4. Comparison of required number of switch elements in 2D and 3D switches.3. Optical Design of Large Scale Micro-optic Switches The key optical design of the large-scale micro-optic switch involves the MEMS mirror size and deflection angle design. The insertion loss of the switching system depends on the fiber collimator array design, the switch size, and the MEMS mirror deflection angles.Figure 6. Th eoretical insertion loss distribution and th e measured insertion loss distribution[4].The calculated losses for all 129,600 paths of a 360x360 photonic switch are shown in Fig. 6. The measured losses are slightly higher and have a larger distribution, partly due to connector loss variation.4. ConclusionsIn conclusion, optical switches are an extremely low power, high capacity approach. 3D MEMS switches can be scaled to large sizes (>300x300) with low loss (< 2 dB) and low power (<1 W). It is a promising solution for high capacity optical networks. 5. References[1] K. G. Coffman and A. M. Odlyzko, Handbook of Massive Data Sets, J. Abello, P. Pardalos, and M. G. C. Resende, eds., pp. 47-93, Kluwer, 2002.[2] R.S. Tucker, LEOS Annual Meeting (2008). [3] X. Zheng, et al., JSTQE, 9(2), 571-578, (2003). [4] J . E. Bowers and S. Yuan, “Large Scale Microoptic Switching,” MOC'07, Takamatsu, Kagawa, Japan, October 28-31 (2007).153。

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