IRFP4229规格书

IRFP4229PbF
Notes through are on page 8
Description
This HEXFET ® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Response
l High Repetitive Peak Current Capability for Reliable Operation
l Short Fall & Rise Times for Fast Switching l 175°C Operating Junction Temperature for Improved Ruggedness
l Repetitive Avalanche Capability for Robustness and Reliability
PDP SWITCH
D
D
PD - 97079A
IRFP4229PbF
Electrical Characteristics @ T = 25°C (unless otherwise specified)
= 50V = 0V e
IRFP4229PbF
Fig 6. Typical E PULSE vs. Drain Current
Fig 5. Typical E PULSE vs. Drain-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
GS T J , Junction Temperature (°C)
V DS, Drain-to -Source Voltage (V)E n e r g y p e r p u l s e (µJ )
I D, Peak Drain Current (A)
E n e r g y p e r p u l s e (µJ )
IRFP4229PbF
Fig 11. Maximum Drain Current vs. Case Temperature Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 7. Typical E PULSE vs.Temperature
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage V SD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S D , R e v e r s e D r a i n C u r r e n t (A )
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
01000
20003000400050006000
7000C , C a p a c i t a n c e (p F )
20
40
60
80
100
120
Q G Total Gate Charge (nC)
04
8
12
16
20V G S , G a t e -t o -S o u r c e V o l t a g e (V )
25
50
75
100
125
150
175
T J , Junction Temperature (°C)
010
20
30
40
50
I D , D r a i n C u r r e n t (A )
0400
800
1200
1600
2000E n e r g y p e r p u l s e (µJ )
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A
)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Threshold Voltage vs. Temperature
Fig 14. Maximum Avalanche Energy Vs. Temperature
Fig 13. On-Resistance Vs. Gate Voltage
Fig 16. Typical Repetitive peak Current vs.
Case temperature
V GS , Gate-to-Source Voltage (V)
0.30
0.40
e s i s t a n c e (Ω
)T J , Temperature ( °C )
V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )
t 1 , Rectangular Pulse Duration (sec)
T h e r m a l R e s p o n s e ( Z )
255075100125150175
Case Temperature (°C)
20406080100120
140R e p e t i t i v e P e a k C u r r e n t (A )
Starting T J , Junction Temperature (°C)
IRFP4229PbF
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
I AS
V DD
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
Id
Qgs1Qgs2Qgd Qgodr
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET ® Power MOSFETs
*** V GS = 5V for Logic Level Devices
Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
DR
IRFP4229PbF
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at for sales contact information . 01/2007
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)。