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SPT25N120U1 1200V 25A 尖端沟槽停止 IGBT 晶体管说明书

1200V /25A Trench Field Stop IGBTSPT 25N120U1FEATURES∙High breakdown voltage to 1200V for improved reliability∙Trench-Stop Technology offering : High speed switchingHigh ruggedness, temperature stable Short circuit withstand time – 10μs Low V CEsatEasy parallel switching capability dueto positive temperature coefficient in V CEsat∙Enhanced avalanche capabilityAPPLICATION∙Uninterruptible Power Supplies ∙Solar inverter ∙Welding ∙PFC applicationsProductPackage Packaging SPT 25N120U1TO247TubeV CE 1200 V I C25 A V CE(SAT) I C =25A2.05VMaximum RatingsParameter Symbol Value Unit Collector-Emitter Breakdown Voltage V CE1200 V DC collector current, limited by T jmaxT C = 25°C T C = 100°C I C5025ADiode Forward current, limited by T jmaxT C = 25°C T C = 100°C I F5025AContinuous Gate-emitter voltage V GE±20 V Transient Gate-emitter voltage V GE±30 V Turn off safe operating area V CE ≤1200V,T j ≤ 150°C- 75 APulsed collector current, V GE= 15V ,t p limited by T jmaxI CM75 AShort Circuit Withstand Time, V GE= 15V,VCE≤ 600VTsc 10 μs Power dissipation , Tj=25℃Ptot 210 W Operating junction temperature T j-40...+150°C Storage temperature T s -55...+150°CSoldering temperature, wave soldering 1.6mm(0.063in.) from case for 10s- 260 °CThermal ResistanceParameter Symbol Max. Value Unit IGBT thermal resistance,junction - caseRθ(j-c) 0.61 K/WDiode thermal resistance,junction - caseRθ(j-c) 1.2 K/WThermal resistance,junction - ambientRθ(j-a) 40 K/W Electrical Characteristics of the IGBT（T j= 25℃ unless otherwise specified）：Parameter Symbol Conditions Min Typ Max Unit StaticCollector-Emitterbreakdown voltageBV CES V GE=0V , I C=250μA 1200 - - V Gate threshold voltage V GE(th)V GE=V CE, I C=250μA 5.4 6.0 6.6 VCollector-Emitter Saturation voltage V CE(sat)V GE=15V, I C=25AT j = 25°CT j = 150°C--2.052.652.45-VZero gate voltage collector current I CESV CE = 1200V, V GE = 0VT j = 25°CT j = 150°C----1001000μAGate-emitter leakage current I GES V CE = 0V, V GE = ±20V - - 100nA Transconductance g fs V CE=20V, I C=25A - 13 - SParameter Symbol Conditions Min Typ Max Unit DynamicInput capacitance C iesV CE = 25V, V GE = 0V,f = 1MHz - 1865 -pFOutput capacitance C oes- 70 - Reverse transfercapacitanceC res- 45 -Gate charge Q G V CC = 960V, I C = 25A,V GE = 15V- 137 - nCShort circuit collector current I C（SC）V GE=15V,t SC≤10usV CC=600V,T j，start=25°C- 140 - ASwitching Characteristic, Inductive LoadParameter Symbol Conditions Min Typ Max Unit Dynamic , at T j = 25°CTurn-on delay time td(on)V CC = 600V, I C = 25A,V GE = 0/15V,R g=42Ω- 62 - nsRise time t r -22-nsTurn-on energy E on -3.3-mJTurn-off delay time td(off)-297-nsFall time t f -94 -nsTurn-off energy E off- 0.65 -mJElectrical Characteristics of the DIODEParameter Symbol Conditions Min. Typ. Max. Unit Dynamic , at T j = 25°CDiode Forward Voltage V FM I F = 25A- 3.1 - VReverse Recovery Time T rrI F= 25A,di/dt= 600A/μs - 420 - nSReverse Recovery Current I rr- 17 - A Reverse Recovery Charge Q rr- 2570 - nCFig. 1 FBSOA characteristicsFig. 2 Load Current vs. FrequencyFig. 3 Output characteristicsFig. 4 Saturation voltage characteristics0.11101001101001000I C (A )VCE(V)01020304050600.1110100I C (A )f (KHz)010203040506012345I C (A )V CE (V)1020304050600123456I C (A )V CE (V )25℃150℃V GE = 20V17V15V 13V11V9VV GE = 15Vt P = 10μs50μs 100μs500μs1msDCT a =25°C, T j ≤150C , V GE =15VD=0.5, V CE =600V,V GE =0/15V, R g =42Ω，T j ≤150C110℃80℃Fig. 5 Switching times vs. gate resistorFig. 6 Switching times vs. collector currentFig. 7 Switching loss vs. gate resistorFig. 8 Switching loss vs. collector current101001000510152025303540455055t , S W I T C H I N G T I M E S[n s ]R g (Ω)td(off)tf td(on)tr101001000102030405060t , S W I T C H I N G T I M E S [n s ]I C (A)td(off)tf td(on)tr00.511.522.533.540510152025303540455055S w i t c h i n g l o s s (m J )R g (Ω)Eoff Eon024681012102030405060S w i t c h i n g l o s s (m J )I c (A)Eoff EonCommon EmitterV CC =600V, V GE = 15V, I C =25A Ta=25℃ Common EmitterV CC = 600V, V GE = 15V, R G =42Ω Ta=25℃Common EmitterV CC =600V, V GE = 15V, I C =25A Ta=25℃Common EmitterV CC = 600V, V GE = 15V, R G =42Ω Ta=25℃Fig. 9 Gate charge characteristicsFig. 10 Capacitance characteristics0369121550100150V G E (V )Qg (nC)240V640V 960V101001000100001112131C a p a c i t a n c eV CE (V)Ciss(pF)Coss(pF)Crss(pF)Common Emitter I C = 25A ,Ta=25℃Common Emitter VGE = 0V, f = 1MHz Ta=25℃。

Short Course for Qualcomm -- Analysis and Design of LC VCOs -- by B Razavi 2010 [good]

Short Course for Qualcomm
Analysis and Design of LC VCOs
April 19, 2010
Behzad Razavi Electrical Engineering Department University of California, Los Angeles
33
Analysis of Phase Noise
Need to answer these questions: • • How does noise injected by a device corrupts the phase? How much noise does each device inject? Tens of papers have been published on phase noise in oscillators. Many mechanisms result in phase noise. No single approach has been sufficient to give insight into all mechanisms. We follow two approaches here: - Approach I: based on time averages (a) the average spectrum of noise of a device while the noise spectrum varies with time. (b) the “average resistance” - Approach II: based on phase response of an oscillator to an injected impulse in the time domain [Hajimiri & Lee, JSSC, Feb. 98].

超低功耗微型超声时间差测距传感器CH101说明书

CH101 Ultra-low Power Integrated Ultrasonic Time-of-Flight Range SensorChirp Microsystems reserves the right to change specifications and information herein without notice.Chirp Microsystems2560 Ninth Street, Ste 200, Berkeley, CA 94710 U.S.A+1(510) 640–8155Document Number: DS-000331Revision: 1.2Release Date: 07/17/2020CH101 HIGHLIGHTSThe CH101 is a miniature, ultra-low-power ultrasonic Time-of-Flight (ToF) range sensor. Based on Chirp’s patented MEMS technology, the CH101 is a system-in-package that integrates a PMUT (Piezoelectric Micromachined Ultrasonic Transducer) together with an ultra-low-power SoC (system on chip) in a miniature, reflowable package. The SoC runs Chirp’s advanced ultrasonic DSP algorithms and includes an integrated microcontroller that provides digital range readings via I2C.Complementing Chirp’s long-range CH201 ultrasonic ToF sensor product, the CH101 provides accurate range measurements to targets at distances up to 1.2m. Using ultrasonic measurements, the sensor works in any lighting condition, including full sunlight to complete darkness, and provides millimeter-accurate range measurements independent of the target’s color and optical transparency. The sensor’s Field-of-View (FoV) can be customized and enables simultaneous range measurements to multiple objects in the FoV. Many algorithms can further process the range information for a variety of usage cases in a wide range of applications.The CH101-00ABR is a Pulse-Echo product intended for range finding and presence applications using a single sensor for transmit and receive of ultrasonic pulses. The CH101-02ABR is a frequency matched Pitch-Catch product intended for applications using one sensor for transmit and a second sensor for receiving the frequency matched ultrasonic pulse.DEVICE INFORMATIONPART NUMBER OPERATION PACKAGECH101-00ABR Pulse-Echo 3.5 x 3.5 x 1.26mm LGA CH101-02ABR Pitch-Catch 3.5 x 3.5 x 1.26mm LGA RoHS and Green-Compliant Package APPLICATIONS•Augmented and Virtual Reality•Robotics•Obstacle avoidance•Mobile and Computing Devices•Proximity/Presence sensing•Ultra-low power remote presence-sensing nodes •Home/Building automation FEATURES•Fast, accurate range-finding•Operating range from 4 cm to 1.2m•Sample rate up to 100 samples/sec• 1.0 mm RMS range noise at 30 cm range•Programmable modes optimized for medium and short-range sensing applications•Customizable field of view (FoV) up to 180°•Multi-object detection•Works in any lighting condition, including full sunlight to complete darkness•Insensitive to object color, detects opticallytransparent surfaces (glass, clear plastics, etc.) •Easy to integrate•Single sensor for receive and transmit•Single 1.8V supply•I2C Fast-Mode compatible interface, data rates up to 400 kbps•Dedicated programmable range interrupt pin•Platform-independent software driver enables turnkey range-finding•Miniature integrated module• 3.5 mmx 3.5 mm x 1.26 mm, 8-pin LGA package•Compatible with standard SMD reflow•Low-power SoC running advanced ultrasound firmware•Operating temperature range: -40°C to 85°C •Ultra-low supply current• 1 sample/s:o13 µA (10 cm max range)o15 µA (1.0 m max range)•30 samples/s:o20 µA (10 cm max range)o50 µA (1.0 m max range)Table of ContentsCH101 Highlights (1)Device Information (1)Applications (1)Features (1)Simplified Block Diagram (3)Absolute Maximum Ratings (4)Package Information (5)8-Pin LGA (5)Pin Configuration (5)Pin Descriptions (6)Package Dimensions (6)Electrical Characteristics (7)Electrical Characteristics (Cont’d) (8)Typical Operating Characteristics (9)Detailed Description (10)Theory of Operation (10)Device Configuration (10)Applications (11)Chirp CH101 Driver (11)Object Detection (11)Interfacing to the CH101 Ultrasonic Sensor (11)Device Modes of Operation: (12)Layout Recommendations: (13)PCB Reflow Recommendations: (14)Use of Level Shifters (14)Typical Operating Circuits (15)Ordering Information (16)Part Number Designation (16)Package Marking (17)Tape & Reel Specification (17)Shipping Label (17)Revision History (19)SIMPLIFIED BLOCK DIAGRAMFigure 1. Simplified Block DiagramABSOLUTE MAXIMUM RATINGSPARAMETER MIN. TYP. MAX. UNIT AVDD to VSS -0.3 2.2 V VDD to VSS -0.3 2.2 V SDA, SCL, PROG, RST_N to VSS -0.3 2.2 V Electrostatic Discharge (ESD)Human Body Model (HBM)(1)Charge Device Model (CDM)(2)-2-5002500kVV Latchup -100 100 mA Temperature, Operating -40 85 °C Relative Humidity, Storage 90 %RH Continuous Input Current (Any Pin) -20 20 mA Soldering Temperature (reflow) 260 °CTable 1. Absolute Maximum RatingsNotes:1.HBM Tests conducted in compliance with ANSI/ESDA/JEDEC JS-001-2014 Or JESD22-A114E2.CDM Tests conducted in compliance with JESD22-C101PACKAGE INFORMATION8-PIN LGADESCRIPTION DOCUMENT NUMBER CH101 Mechanical Integration Guide AN-000158CH101 and CH201 Ultrasonic Transceiver Handling andAssembly Guidelines AN-000159Table 2. 8-Pin LGAPIN CONFIGURATIONTop ViewFigure 2. Pin Configuration (Top View)PIN DESCRIPTIONSPIN NAME DESCRIPTION1 INT Interrupt output. Can be switched to input for triggering and calibration functions2 SCL SCL Input. I2C clock input. This pin must be pulled up externally.3 SDA SDA Input/Output. I2C data I/O. This pin must be pulled up externally.4 PROG Program Enable. Cannot be floating.5 VSS Power return.6 VDD Digital Logic Supply. Connect to externally regulated 1.8V supply. Suggest commonconnection to AVDD. If not connected locally to AVDD, b ypass with a 0.1μF capacitor asclose as possible to VDD I/O pad.7 AVDD Analog Power Supply. Connect to externally re gulated supply. Bypass with a 0.1μFcapacitor as close as possible to AVDD I/O pad.8 RESET_N Active-low reset. Cannot be floating.Table 3. Pin DescriptionsPACKAGE DIMENSIONSFigure 3. Package DimensionsELECTRICAL CHARACTERISTICSAVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, min/max are from T A = -40°C to +85°C, unless otherwise specified.PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITSPOWER SUPPLYAnalog Power Supply AVDD 1.62 1.8 1.98 V Digital Power Supply VDD 1.62 1.8 1.98 VULTRASONIC TRANSMIT CHANNELOperating Frequency 175 kHzTXRX OPERATION (GPR FIRMWARE USED UNLESS OTHERWISE SPECIFIED)Maximum Range Max Range Wall Target58 mm Diameter Post1.2(1)0.7mm Minimum Range Min Range Short-Range F/W used 4(2)cm Measuring Rate (Sample/sec) SR 100 S/s Field of View FoV Configurable up to 180º deg Current Consumption (AVDD +VDD) I SSR=1S/s, Range=10 cmSR=1S/s, Range=1.0mSR=30S/s, Range=10 cmSR=30S/s, Range=1.0m13152050μAμAμAμA Range Noise N R Target range = 30 cm 1.0 mm, rms Measurement Time 1m max range 18 ms Programming Time 60 msTable 4. Electrical CharacteristicsNotes:1.Tested with a stationary target.2.For non-stationary objects. While objects closer than 4cm can be detected, the range measurement is not ensured.ELECTRICAL CHARACTERISTICS (CONT’D)AVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, unless otherwise specified.PARAMETERSYMBOL CONDITIONS MINTYP MAX UNITS DIGITAL I/O CHARACTERISTICS Output Low Voltage V OL SDA, INT,0.4 V Output High Voltage V OH INT 0.9*V VDD V I 2C Input Voltage Low V IL_I2C SDA, SCL 0.3*V VDDV I 2C Input Voltage High V IH_I2C SDA, SCL 0.7*V VDD V Pin Leakage Current I L SDA,SCL, INT(Inactive), T A =25°C±1μA DIGITAL/I 2C TIMING CHARACTERISTICSSCL Clock Frequencyf SCLI 2C Fast Mode400kHzTable 5. Electrical Characteristics (Cont’d)TYPICAL OPERATING CHARACTERISTICSAVDD = VDD = 1.8VDC, VSS = 0V, T A = +25°C, unless otherwise specified.Typical Beam Pattern – MOD_CH101-03-01 Omnidirectional FoV module(Measured with a 1m2 flat plate target at a 30 cm range)Figure 4. Beam pattern measurements of CH101 moduleDETAILED DESCRIPTIONTHEORY OF OPERATIONThe CH101 is an autonomous, digital output ultrasonic rangefinder. The Simplified Block Diagram, previously shown, details the main components at the package-level. Inside the package are a piezoelectric micro-machined ultrasonic transducer (PMUT) and system-on-chip (SoC). The SoC controls the PMUT to produce pulses of ultrasound that reflect off targets in the sensor’s Field of View (FoV). The reflections are received by the same PMUT after a short time delay, amplified by sensitive electronics, digitized, and further processed to produce the range to the primary target. Many algorithms can further process the range information for a variety of usage cases in a wide range of applications.The time it takes the ultrasound pulse to propagate from the PMUT to the target and back is called the time-of-flight (ToF). The distance to the target is found by multiplying the time-of-flight by the speed of sound and dividing by two (to account for the round-trip). The speed of sound in air is approximately 343 m/s. The speed of sound is not a constant but is generally stable enough to give measurement accuracies within a few percent error.DEVICE CONFIGURATIONA CH101 program file must be loaded into the on-chip memory at initial power-on. The program, or firmware, is loaded through a special I2C interface. Chirp provides a default general-purpose rangefinder (GPR) firmware that is suitable for a wide range of applications. This firmware enables autonomous range finding operation of the CH101. It also supports hardware-triggering of the CH101 for applications requiring multiple transceivers. Program files can also be tailored to the customer’s application. Contact Chirp for more information.CH101 has several features that allow for low power operation. An ultra-low-power, on-chip real-time clock (RTC) sets the sample rate and provides the reference for the time-of-flight measurement. The host processor does not need to provide any stimulus to the CH101 during normal operation, allowing the host processor to be shut down into its lowest power mode until the CH101 generates a wake-up interrupt. There is also a general-purpose input/output (INT) pin that is optimized to be used as a system wake-up source. The interrupt pin can be configured to trigger on motion or proximity.APPLICATIONSCHIRP CH101 DRIVERChirp provides a compiler and microcontroller-independent C driver for the CH101 which greatly simplifies integration. The CH101 driver implements high-level control of one or more CH101s attached to one or more I2C ports on the host processor. The CH101 driver allows the user to program, configure, trigger, and readout data from the CH101 through use of C function calls without direct interaction with the CH101 I2C registers. The CH101 driver only requires the customer to implement an I/O layer which communicates with the host processor’s I2C hardware and GPIO hardware. Chirp highly recommends that all designs use the CH101 driver.OBJECT DETECTIONDetecting the presence of objects or people can be optimized via software, by setting the sensor’s full-scale range (FSR), and via hardware, using an acoustic housing to narrow or widen the sensor’s field-of-view. The former means that the user may set the maximum distance at which the sensor will detect an object. FSR values refer to the one-way distance to a detected object.In practice, the FSR setting controls the amount of time that the sensor spends in the listening (receiving) period during a measurement cycle. Therefore, the FSR setting affects the time required to complete a measurement. Longer full-scale range values will require more time for a measurement to complete.Ultrasonic signal processing using the CH101’s General Purpose Rangefinder (GPR) Firmware will detect echoes that bounce off the first target in the Field-of-View. The size, position, and material composition of the target will affect the maximum range at which the sensor can detect the target. Large targets, such as walls, are much easier to detect than smaller targets. Thus, the associated operating range for smaller targets will be shorter. The range to detect people will be affected by a variety of factors such as a person’s size, clothing, orientation to the sensor and the sensor’s field-of-view. In general, given these factors, people can be detected at a maximum distance of 0.7m from the CH101 sensor.For additional guidance on the detection of people/objects using the NEMA standard, AN-000214 Presence Detection Application Note discusses the analysis of presence detection using the Long-Range CH201 Ultrasonic sensor.INTERFACING TO THE CH101 ULTRASONIC SENSORThe CH101 communicates with a host processor over the 2-wire I2C protocol. The CH101 operates as an I2C slave and responds to commands issued by the I2C master.The CH101 contains two separate I2C interfaces, running on two separate slave addresses. The first is for loading firmware into the on-chip program memory, and the second is for in-application communication with the CH101. The 7-bit programming address is0x45, and the 7-bit application address default is 0x29. The application address can be reprogrammed to any valid 7-bit I2C address. The CH101 uses clock stretching to allow for enough time to respond to the I2C master. The CH101 clock stretches before the acknowledge (ACK) bit on both transmit and receive. For example, when the CH101 transmits, it will hold SCL low after it transmits the 8th bit from the current byte while it loads the next byte into its internal transmit buffer. When the next byte is ready, it releases the SCL line, reads the master’s ACK bit, and proceeds accordingly. When the CH101 is receiving, it holds the SCL line low after it receives the 8th bit in a byte. The CH101 then chooses whether to ACK or NACK depending on the received data and releases the SCL line.The figure below shows an overview of the I2C slave interface. In the diagram, ‘S’ indicates I2C start, ‘R/W’ is the read/write bit, ‘Sr’ is a repeated start, ‘A’ is acknowledge, and ‘P’ is the stop condition. Grey boxes indicate the I2C master actions; white boxes indicate the I2C slave actions.Figure 5. CH101 I2C Slave Interface DiagramDEVICE MODES OF OPERATION:FREE-RUNNING MODEIn the free-running measurement mode, the CH101 runs autonomously at a user specified sample rate. In this mode, the INT pin is configured as an output. The CH101 pulses the INT pin high when a new range sample is available. At this point, the host processor may read the sample data from the CH101 over the I2C interface.HARDWARE-TRIGGERED MODEIn the hardware triggered mode, the INT pin is used bi-directionally. The CH101 remains in an idle condition until triggered by pulsing the INT pin. The measurement will start with deterministic latency relative to the rising edge on INT. This mode is most useful for synchronizing several CH101 transceivers. The host controller can use the individual INT pins of several transceivers to coordinate the exact timing.CH101 BEAM PATTERNSThe acoustic Field of View is easily customizable for the CH101 and is achieved by adding an acoustic housing to the transceiver that is profiled to realize the desired beam pattern. Symmetric, asymmetric, and omnidirectional (180° FoV) beam patterns are realizable. An example beam pattern is shown in the Typical Operating Characteristics section of this document and several acoustic housing designs for various FoV’s are available from Chirp.LAYOUT RECOMMENDATIONS:RECOMMENDED PCB FOOTPRINTDimensions in mmFigure 6. Recommended PCB FootprintPCB REFLOW RECOMMENDATIONS:See App Note AN-000159, CH101 and CH201 Ultrasonic Transceiver Handling and Assembly Guidelines.USE OF LEVEL SHIFTERSWhile the use of autosense level shifters for all the digital I/O signal signals is acceptable, special handling of the INT line while using a level shifter is required to ensure proper resetting of this line. As the circuit stage is neither a push-pull nor open-drain configuration (see representative circuit below), it is recommended that level shifter with a manual direction control line be used. The TI SN74LVC2T45 Bus Transceiver is a recommended device for level shifting of the INT signal line.Figure 7. INT Line I/O Circuit StageTYPICAL OPERATING CIRCUITSFigure 8. Single Transceiver OperationFigure 9. Multi- Transceiver OperationORDERING INFORMATIONPART NUMBER DESIGNATIONFigure 10. Part Number DesignationThis datasheet specifies the following part numbersPART NUMBER OPERATION PACKAGE BODY QUANTITY PACKAGING CH101-00ABR Pulse-Echo 3.5 mm x 3.5 mm x 1.26 mmLGA-8L 1,000 7” Tape and ReelCH101-02ABR Pitch-Catch 3.5 mm x 3.5 mm x 1.26 mmLGA-8L 1,000 7” Tape and ReelTable 6. Part Number DesignationCH101-xxABxProduct FamilyProduct Variant Shipping CarrierR = Tape & Reel 00AB = Pulse-Echo Product Variant02AB = Pitch-Catch Product VariantCH101 = Ultrasonic ToF SensorPACKAGE MARKINGFigure 11. Package MarkingTAPE & REEL SPECIFICATIONFigure 12. Tape & Reel SpecificationSHIPPING LABELA Shipping Label will be attached to the reel, bag and box. The information provided on the label is as follows:•Device: This is the full part number•Lot Number: Chirp manufacturing lot number•Date Code: Date the lot was sealed in the moisture proof bag•Quantity: Number of components on the reel•2D Barcode: Contains Lot No., quantity and reel/bag/box numberDimensions in mmDEVICE: CH101-XXXXX-XLOT NO: XXXXXXXXDATE CODE: XXXXQTY: XXXXFigure 13. Shipping LabelREVISION HISTORY09/30/19 1.0 Initial Release10/22/19 1.1 Changed CH-101 to CH101. Updated figure 7 to current markings.07/17/20 1.2 Format Update. Incorporated “Maximum Ratings Table” and “Use of LevelShifters” section.This information furnished by Chirp Microsystems, Inc. (“Chirp Microsystems”) is believed to be accurate and reliable. However, no responsibility is assumed by Chirp Microsystems for its use, or for any infringements of patents or other rights of third parties that may result from its use. Specifications are subject to change without notice. Chirp Microsystems reserves the right to make changes to this product, including its circuits and software, in order to improve its design and/or performance, without prior notice. Chirp Microsystems makes no warranties, neither expressed nor implied, regarding the information and specifications contained in this document. Chirp Microsystems assumes no responsibility for any claims or damages arising from information contained in this document, or from the use of products and services detailed therein. This includes, but is not limited to, claims or damages based on the infringement of patents, copyrights, mask work and/or other intellectual property rights.Certain intellectual property owned by Chirp Microsystems and described in this document is patent protected. No license is granted by implication or otherwise under any patent or patent rights of Chirp Microsystems. This publication supersedes and replaces all information previously supplied. Trademarks that are registered trademarks are the property of their respective companies. Chirp Microsystems sensors should not be used or sold in the development, storage, production or utilization of any conventional or mass-destructive weapons or for any other weapons or life threatening applications, as well as in any other life critical applications such as medical equipment, transportation, aerospace and nuclear instruments, undersea equipment, power plant equipment, disaster prevention and crime prevention equipment.©2020 Chirp Microsystems. All rights reserved. Chirp Microsystems and the Chirp Microsystems logo are trademarks of Chirp Microsystems, Inc. The TDK logo is a trademark of TDK Corporation. Other company and product names may be trademarks of the respective companies with which they are associated.©2020 Chirp Microsystems. All rights reserved.。

国科大研究院英文发言稿

国科大研究院英文发言稿Here is an English essay of more than 1,000 words on the topic "USTC Research Institute Speech":Esteemed colleagues, distinguished guests, and members of the academia, it is my great honor to stand before you today to share my thoughts and insights on the remarkable work being conducted at the University of Science and Technology of China (USTC) Research Institute. As the director of this esteemed institution, I am truly humbled by the opportunity to convey the incredible achievements and the unwavering dedication of our talented researchers and scholars.The USTC Research Institute has long been recognized as a beacon of innovation and scientific excellence not only within China but on a global scale. Since its inception, our institute has been at the forefront of groundbreaking research, pushing the boundaries of human knowledge and driving transformative advancements across a diverse array of disciplines. From the fields of quantum computing and artificial intelligence to cutting-edge materials science and renewable energy, the work emanating from our hallowed halls has been nothing short of remarkable.At the core of our success lies a steadfast commitment to interdisciplinary collaboration and the cultivation of a vibrant, intellectually stimulating environment. We firmly believe that the most profound breakthroughs often emerge at the intersections of various fields of study, where the cross-pollination of ideas and the synergistic interplay of diverse perspectives can unleash unprecedented discoveries. It is this spirit of collaboration that has permeated every aspect of our research endeavors, fostering a culture of intellectual curiosity, mutual respect, and a relentless pursuit of knowledge.One of the key pillars of our research agenda has been the exploration of quantum phenomena and their practical applications. Our world-class quantum research team has made remarkable strides in developing cutting-edge quantum computing and communication technologies, paving the way for a future where the principles of quantum mechanics can be harnessed to revolutionize the way we process and transmit information. Through their groundbreaking work, our researchers have not only advanced the fundamental understanding of quantum mechanics but have also brought us closer to realizing the immense potential of quantum technologies to transform industries, improve security, and unlock new frontiers in scientific exploration.Alongside our quantum research initiatives, the USTC Research Institute has also been at the forefront of advancements in artificial intelligence and machine learning. Our AI research group has been pioneering innovative approaches to machine learning, neural network architectures, and data-driven decision-making, with applications that span a wide range of sectors, from healthcare and finance to transportation and environmental conservation. The remarkable progress made by our AI researchers has not only expanded the boundaries of what is possible but has also positioned our institute as a global leader in the rapidly evolving field of artificial intelligence.In the realm of materials science, our institute has garnered international acclaim for its groundbreaking work on the development of novel materials with unprecedented properties. From the creation of high-performance superconductors to the design of advanced composite materials, our materials science team has consistently pushed the limits of what is achievable, unlocking new pathways for technological advancements and addressing pressing global challenges. Their work has the potential to revolutionize industries ranging from energy production to aerospace engineering, with far-reaching implications for the future of humanity.Underpinning all of these research endeavors is our unwaveringcommitment to sustainability and the responsible stewardship of our environment. The USTC Research Institute has been at the forefront of the development of renewable energy technologies, exploring innovative solutions to harness the power of solar, wind, and other clean energy sources. Our researchers have made significant contributions to the advancement of energy storage systems, grid-scale energy management, and the integration of renewable energy into existing infrastructure, paving the way for a more sustainable and environmentally-conscious future.Beyond the confines of our own research initiatives, the USTC Research Institute has also been actively engaged in fostering international collaborations and knowledge-sharing networks. We firmly believe that the most pressing challenges facing humanity can only be addressed through a global, collaborative effort, and we have established strong partnerships with leading research institutions, government agencies, and industry leaders around the world. These collaborative endeavors have not only expanded the reach and impact of our work but have also enabled us to learn from diverse perspectives and collectively drive progress in key areas of scientific and technological development.As we look to the future, the USTC Research Institute remains steadfast in its commitment to pushing the boundaries of human knowledge and tackling the most pressing challenges facing ourworld. We are driven by a relentless pursuit of excellence, a deep-rooted passion for discovery, and an unwavering belief in the transformative power of science and technology. With the continued support of our esteemed colleagues, the unwavering dedication of our talented researchers, and the collective wisdom of the global scientific community, I am confident that the USTC Research Institute will continue to be a beacon of innovation and a driving force in shaping the future of our world.Thank you all for your kind attention. I look forward to the engaging discussions and fruitful collaborations that lie ahead as we work together to unlock the mysteries of the universe and build a better tomorrow for all.。

Thermo Scientific Helios 5 FX DualBeam说明书

Helios 5 FX DualBeamEnabling breakthrough failure analysis for advanced technology nodesThe Helios 5 Dual Beam platform continues to serve the imaging, analysis, and S/TEM sample preparation applications in the most advanced semiconductor failure analysis, process development and process control laboratories.The Thermo Scientific ™ Helios 5 FX ™ DualBeam continues the Helios legacy to the fifth generation combining the innovative Elstar ™ with UC+ technology electron column for high-resolution and high materials contrast imaging, in-lens S/TEM 4 for 3Å in-situ low kV S/TEM imaging and the superior low kV performing Phoenix ™ ion column for fast, precise and sub-nm damagesample preparation. In addition to the industry leading SEM and FIB columns, the Helios 5 FX incorporates a suite of state-of-the-art technologies which enable simple and consistent sample preparation (for high resolution S/TEM imaging and/or Atom Probe microscopy) on even the most challenging samples.High quality imaging at all landing energiesThe ultra-high brightness electron source on the Helios 5 FX System is equipped with 2nd generation UC technology (UC+) to reduce the beam energy spread below 0.2 eV for beam currents up to 100 pA. This enables sub-nanometer resolution and high surface sensitivity at low landing energies. The highly efficient Mirror Detector and In-Column Detector in the Helios 5 FX System come with the ability to simultaneously acquire and mix TLD-SE, MD-BSE and ICD-BSE signals to produce the best overall ultra-high resolution images. Low-loss MD-BSE provides excellent materials contrast with an improvement of up to 1.5x in Contrast-to-Noise ratio, while No-loss ICD-BSE provides materials contrast with maximum surface sensitivity.Shorten time to useable dataThe Helios 5 FX System is the world’s first DualBeam toincorporate a TEM-like CompuStage for TEM lamella sample preparation and combine it with an all new In-lens STEM 4 detector to drastically reduce the time to high quality useable data. The integrated CompuStage is independent of the bulk stage and comes with separate X, Y, Z, eucentric 180° alpha tilt and 200° beta tilt axes enabling SEM endpointing on both sides of S/TEM lamella. The accompanying S/TEM rod is compatible with standard 3 mm TEM grids and enables fast grid exchange without breaking vacuum. In addition, the system is equippedDATASHEETHigh-performance Elstar electron column with UC+monochromator technology for sub-nanometer SEM and S/TEM image resolutionExceptional low kV Phoenix ion beam performance enables sub-nm TEM sample preparation damageSharp, refined, and charge-free contrast obtained from up to 5 integrated in-column and below-the-lens detectors MultiChem Gas Delivery System provides the most advanced capabilities for electron and ion beam induced deposition and etching on DualBeamsEasyLift EX Nanomanipulator enables precise, site-specific preparation of ultra-thin TEM lamellae all while promoting high user confidence and yieldSTEM 4 detector provides outstanding resolution and contrast on thin TEM samplesBacked by the Thermo Fisher Scientfic world class knowledge and expertise in advanced failure analysis forDualBeam applicationsFigure 1. TEM sample preparation using the Thermo Scientific iFAST automation software package and extracted using the EasyLift Nanomanipulator.Figure 2. HRSTEM Bright Field image of a 14 nm SRAM Inverter thinned to 15 nm showing both nFET and pFET structures connected with a metal gate.For current certifications, visit /certifications. © 2020 FEI Company. All rights reserved.All trademarks are the property of Thermo Fisher Scientific and its subsidiaries unless otherwise specified. DS0283-EN-07-2020Find out more at /EM-Saleswith a retractable, annular STEM 4 detector which can be used either in standard mode for real-time STEM endpointing (6Å resolution) or in the new In-lens mode for ultimate imaging performance (3Å resolution). Both modes support improved materials contrast through the use of Bright Field, Dark Field annular and HAADF segments collecting transmitted electrons simultaneously. A new STEM detector enables diffraction imaging and zone axis alignment (automated or manual), enabling highest resolution and contrast on STEM samples. Extreme high resolution, high contrast imaging of ultra-thin lamella is now possible using 30 kV electrons. Having the ability to complete failure analysis work in the DualBeam without exposing the finished sample to ambient air shortens the time to data and reduces the need for standalone S/TEM systems.High quality ultra-thin TEM sample preparationPreparing high quality, ultra-thin TEM samples requires polishing the sample with very low kV ions to minimize damage to the sample. The Thermo Scientific most advanced Phoenix Focused Ion Beam (FIB) column not only delivers high resolution imaging and milling at 30 kV but now expands unmatched FIB performance down to accelerating voltages as low as 500 V enabling the creation of 7 nm TEM lamella with sub-nm damage layers.Enabling flexibilitySmart Alignments actively maintain the system for optimum performance, ready to deliver the highest performance for all users. Patterning improvements ensure the highest quality depositions at any condition, and an extensive automation suite make the Helios 5 the most advanced DualBeam ever assembled—all backed by the Thermo Fisher expert application and service support. Specifications • Electron source–Schottky thermal field emitter, over 1 year lifetime • Ion source–Gallium liquid metal, 1000 hours • Landing Voltage –20 V – 30 kV SEM –500 V – 30 kV FIB • STEM resolution –6Å Standard mode –3Å In-len mode • SEM resolution–Optimal WD0.6 nm @ 2–15 kV 0.7 nm @ 1 kV1.0 nm @ 500 V with beam deceleration –Coincident WD 0.8 nm @ 15 kV 1.2 nm @ 1 kV• Ion beam resolution at coincident point –4.0 nm @ 30 kV using preferred statistical method –2.5 nm @ 30 kV using selective edge method–500 nm @ 500 V using preferred statistical method • EDS resolution–< 30 nm on thinned samples • Gas Delivery–Integrated MultiChem Gas Delivery System –Up to 6 chemistries can be installed –Up to 2 external gasses can be installed • In situ TEM sample liftout –EasyLift EX Nanomanipulator • Stage–5 axis CompuStage with S/TEM holder, equipped with automated insert/retract mechanism and air lock for fast TEM grid exchange without breaking system vacuum –5 axis all piezo motorized bulk stage with automated Loadlock • Sample types–Wafer pieces, packaged parts, grids • Maximum sample size–70 mm diameter with full travel• Application software–iFAST Developers Kit Professional automation software • User interface–Windows ® 10 GUI with integrated SEM, FIB, GIS, simultaneous patterning and imaging mode –Local language support: Check with your local Thermo Fisher sales representatives for available language packs –Two 24-inch widescreen LCD monitors Key options• MultiChem gas chemistries –Range of deposition and etch chemistries • Software–Auto Slice & View ™ software, Magma CAD Navigation • Hardware –EDS and WDS。

a short course on topological insulators

a short course on topologicalinsulatorsTopological insulators are a fascinating area of research in condensed matter physics, offering thepossibility of new technologies and applications. However, understanding the basics of topological insulators can be a challenge, especially for those without a background in this field. That's where a short course on topological insulators can be invaluable – here is a step-by-step breakdown of what such a course might involve.Step 1: Introduction to Topological InsulatorsThe first step in any short course on topological insulators would be an introduction to the concept itself. This would involve explaining what distinguishes topological insulators from other materials, and how their unique properties make them interesting for scientific study. Students would learn about the concept of topology, and how it applies to the electronic properties of materials. They would also be introduced to some of the applications that have been proposed for topological insulators, such as quantum computing and new types of electronics.Step 2: Quantum Mechanics PrimerIn order to understand the electronic behavior of topological insulators, students would need to have a good understanding of quantum mechanics. For many students, this may be a challenging topic, so this step would involve a brief overview of the basic principles of quantum mechanics.Students would learn about wave-particle duality, the Heisenberg uncertainty principle, and the Schrödinger equation, which governs the behavior of quantum systems.Step 3: Topological Band TheoryThe next step in the short course would involve delvingdeeper into the theory of topological insulators themselves. This would require an understanding of band theory – theidea that the energy levels of electrons in a solid are grouped into bands. Students would learn how topological band theory describes materials as insulators, conductors, or topological insulators based on the electron bands and their topology. They would also learn about how topology is related to quantum transport of electrons and spin tending to belocked to certain orientations.Step 4: Experimental Techniques in TopologicalInsulatorsTo understand more about the properties of topological insulators, students would need to learn about the experimental techniques used to study them. This wouldinvolve learning about transport measurements, such as the quantum Hall effect, the quantum spin Hall effect, and magnetotransport, as well as other experimental methods, such as angle-resolved photoemission spectroscopy (ARPES),scanning tunneling microscopy, and X-ray diffraction.Step 5: Applications of Topological InsulatorsThe final step in the short course would focus on the applications of topological insulators. Students would learn about the possibility of using these materials in new typesof electronics, such as spintronics, and in quantum computing. They would also learn about other potential applications,such as in energy harvesting and conversion, as well as foruse in detectors and sensors. Finally, students would be introduced to the challenges still faced in realizing these applications, especially challenges around producing and manipulating topological insulators.In conclusion, a short course on topological insulators would provide a valuable introduction to this rapidly growing field. By following the five steps outlined above, students would gain a strong foundation in the theory and experimental techniques of this exciting area of condensed matter physics. Armed with this knowledge, they would be well-placed to pursue further research, develop new applications, and contribute to the ongoing search for new and exciting ways to understand the electronic properties of materials.。

1.1 Introduction in semiconductor manufacturing_Geert Eneman

© IMEC 2011 / CONFIDENTIAL
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imec academy 2014: Nanoscale CMOS process technology imec© 2014
Geert Eneman Page 2
imec academy, imec v.z.w. www.imecacademy.be
The computer, controlled by pre-punched paper tape, could carry out addition, subtraction, multiplication, division and reference to previous results. It had special subroutines for logarithms and trigonometric functions and used 23 decimal place numbers. Data was stored and counted mechanically using 3000 decimal storage wheels, 1400 rotary dial switches, and 500 miles of wire. Its electromagnetic relays classified the machine as a relay computer. All output was displayed on an electric typewriter. By today's standards, the Mark I was slow, requiring 3-5 seconds for a multiplication operation.

Spin-Flip Noise in a Multi-Terminal Spin-Valve

a r X i v :c o n d -m a t /0307070v 1 [c o n d -m a t .m e s -h a l l ] 3 J u l 2003Spin-Flip Noise in a Multi-Terminal Spin-ValveW.BelzigDepartement f¨u r Physik und Astronomie,Klingelbergstr.82,4056Basel,SwitzerlandM.ZareyanMax-Planck-Institut f¨u r Physik komplexer Systeme,N¨o thnitzer Str.38,01187Dresden,Germany andInstitute for Advanced Studies in Basic Sciences,45195-159,Zanjan,Iran(Dated:February 2,2008)We study shot noise and cross correlations in a four terminal spin-valve geometry using a Boltzmann-Langevin approach.The Fano factor (shot noise to current ratio)depends on the mag-netic conﬁguration of the leads and the spin-ﬂip processes in the normal metal.In a four-terminal geometry,spin-ﬂip processes are particular prominent in the cross correlations between terminals with opposite magnetization.The discovery of the giant magneto resistance eﬀect in magnetic multi-layers has boosted the interest in spin-dependent transport in the last years (for a review see e.g.[1]).In combination with quantum transport ef-fects the ﬁeld is termed spintronics [2].In recent ex-periments spin-dependent transport in metallic multi-terminal structures has also been demonstrated [3].One important aspect of quantum transport is the generation of shot noise in mesoscopic conductors [4,5].Probabilis-tic scattering in combination with Fermionic statistics leads to a suppression of the shot noise from its classical value [6,7,8].A particular interesting phenomenon are the nonlocal correlations between currents in diﬀerent terminals of a multi-terminal structure.For a non-interacting fermionic system the cross correlations are generally negative [9].In a one-channel beam splitter the negative sign was con-ﬁrmed experimentally [10,11].If the electrons are in-jected from a superconductor,the cross correlations may change sign and become positive [12,13,14,15].In these studies,however,the spin was only implicitly present due to the singlet pairing in the superconductor.Current noise in ferromagnetic -normal metal struc-tures,in which the spin degree of freedom plays an essen-tial role,has so far attracted only little attention.Non-collinear two-terminal spin valves have been studied in [16]and it was shown that the noise depends on the rela-tive magnetization angle in a diﬀerent way than the con-ductance.Thus,the noise reveals additional information on the internal spin-dynamics.Noise has been exploited to study the properties of localized spins by means of electron spin resonance[17].Quantum entanglement of itinerant spins can also be probed through noise mea-surements [18].In this work we propose a new instrument for the study of spin-dependent transport:the use of cross correlations in a multi-terminal structure.The basic idea is to use a four-terminal structure like sketched in Fig.1.An elec-tron current ﬂows from the left terminals to the right ter-minals and is passing a scattering region.In the absence(b)FIG.1:Four-terminal setup to measure spin-ﬂip correlations.(a)a possible experimental realization with a normal diﬀusive metal strip,on which four ferromagnetic strips are deposited (of diﬀerent width to facilitate diﬀerent magnetization ori-entations).The total length of the diﬀusive metal under-neath the ferromagnetic contacts should be less that the spin-diﬀusion length in the normal metal.(b)theoretical model of the device.Spin ↑(↓)current is ﬂowing in the upper(lower)branch.Spin-ﬂip scattering connects the two spin-branches and is modelled as resistor with also induces additional ﬂutu-ation.of spin-ﬂip scattering the currents of spin-up electrons and spin-down electron are independent,and the cross correlations between any of the two currents in diﬀerent spin channels vanish.However,spin-ﬂip scattering can convert spin-up into spin-down electrons and vice versa,and induces correlations between the diﬀerent spin cur-rents.This has two eﬀects.First,the equilibration of the spin-populations leads to a weakened magneto-resistance eﬀect.Second,the current cross correlations between the diﬀerently polarized terminals contain now information on the spin-ﬂip processes taking place in the scattering region.To this end we will study a four-terminal structure,in which the currents can be measured in all four terminals independently.The layout is shown in Fig.1,in which the various currents are deﬁned.For simplicity,we as-sume that all four terminals are coupled by tunnel junc-tions to one node.The node is assumed to have negligible resistance,but provides spin-ﬂip scattering.The ferro-magnetic character of the terminals is modelled by spin-dependent conductances of the tunnel junctions.The two2 left(right)terminals have chemical potential V1(V2).Inmost of theﬁnal results we will assume zero temperature,but this is not crucial.Furthermore,we will assume fullypolarized tunnel contacts,characterized by g aσ,wherea=L,R denotes left and right terminals,andσ=↑,↓stands for the spin directions(in equations we take↑=+1and↓=−1).The currentﬂuctuations in our structure can be de-scribed by aBoltzmann-Langevin formalism[19].The time-dependent currents at energy E through contact aσare written asI aσ(t,E)=g aσ[f aσ(E)−f cσ(E)−δf cσ(t,E)]+δI aσ(t,E).(1) The averaged occupations of the terminals are denoted by f aσ(E),the one of the central node by f cσ(E).The occupation of the central node isﬂuctuating asδf cσ(t,E). The Langevin sourceδI aσ(t,E)inducesﬂuctuations due to the probabilistic scattering in contact aσ.We assume elastic transport in the following,so all equations are understood to be at the same energy E.Since we assume tunnel contacts,theﬂuctuations are Poissonian and given by[4]δI aσ(t)δI a′σ′(t′) =(2)g aσδσσ′δaa′δ(t−t′)[f aσ+f cσ−2f aσf cσ].The brackets ··· denote averaging over theﬂuctua-tions.The conservation of the total current at all times t leads to the conservation law[20]a,σI aσ(t)=0(3)The equation presented so far describe the transport of two unconnected circuits for spin-up and spin-down elec-trons,i.e.the spin current is conserved in addition to the total current.Spin-ﬂip scattering on the dot leads to a non-conserved spin current,which we write asa,σσI aσ(t)=2g sf[f c↑+δf c↑(t)−f c↓−δf c↓(t)]+2δI sf(t).(4) Here we introduced a phenomenological spin-ﬂip conduc-tance g sf,which connects the two spin occupations on the node.Correspondingly,we added an additional Langevin sourceδI sf(t),which is related to the probabilistic spin scattering and has a correlation function[21]δI sf(t)δI sf(t′) =g sfδ(t−t′)(5)×[f c↑(1−f c↓)+f c↓(1−f c↑)]. Eqs.(1)-(5)form a complete set and determine the aver-age currents and the current noise of our system.Solving for the average occupations of the node we obtainf cσ=[(g−σg Lσ+g sf g L)f L(6)+(g−σg Rσ+g sf g R)f R]/Z.Here we introduced gσ=g Lσ+g Rσ,g L(R)=g L(R)↑+ g L(R)↓,and Z=g↑g↓+(g↑+g↓)g sf.The average currents are thenI Lσ=g LσZ[(g Rσg−σ+(g−σ+g Rσ)g sf)δI Lσ−g Lσ(g−σ+g sf)δI Rσ+σg Lσg−σδI sf−g Lσg sf(δI L−σ+δI R−σ)].(9) Now we can calculate all possible current correlators in the left terminals,deﬁned byS Lσσ′= ∞−∞dτ ∆I Lσ(t+τ)∆I Lσ′(t) .(10) The total current noise in the left terminals isS L=S L↑↑+S L↓↓+2S L↑↓.(11) Of course the same quantities can be calculated for the right terminals.From particle conservation it follows that S L=S R,but in the presence of spin-ﬂip scat-tering the individual correlators can diﬀer.For conve-nience we also deﬁne a Fano factor F=S L/e|I|,where I=I L↑+I L↓is the total current.We will discuss general results below,butﬁrst concen-trate on simple limiting cases.We will restrict ourselves to zero temperature from now on.Assuming a bias volt-age V is applied between the right and the left terminals, the occupations are f L=1and f R=0in the energy range0≤E≤eV.The full current noise can be written asS L=|eV|Z(g↓g L↑−g↑g L↓)2(g sf g R+gσg R−σ)×(g sf g L+g−σg Lσ)].For the cross correlations at the left side weﬁndS L↑↓=−g sf|eV|g L↑g L↓Z(g−σg Lσ+g sf g L)(gσg R−σ+g sf g R) .3It can be shown,that thecrosscorrelations are alwaysnegative,as it should be[9].In the case of a two-terminal geometry two diﬀerent conﬁgurations are possible.Either both terminals have the same spin-direction,or the opposite conﬁguration.In theﬁrst case we can take g↓=0.There is no eﬀect of the spin-ﬂip scattering and we obtain for the Fano factor F=(g2L+g2R)/(g L+g R)2,in agreement with the known results[4].If the two terminals have diﬀerent spin orien-tations(’antiferromagnetic’conﬁguration),the situation is completely diﬀerent,since transport is allowed only by spin-ﬂip scattering.We take g L↓=g R↑=0.The Fano factor isF=1−2g sf g L g R(g L+g R)(g L+g sf)(g R+g sf)|eV|=−2g sfg L↑g L↓g↑g↓ .(15)Theﬁrst term is also present in a spin-symmetric sit-uation,and is caused by the additional current path opened by the spin-ﬂip scattering.The second term in the Eq.(15)depends on the amount of spin accumulation on the central metal,i.e.is proportional to(f c↑−f c↓)2. Weﬁrst consider the symmetric’ferromagnetic’conﬁg-uration g L↑=g R↑=g↑/2and g L↓=g R↓=g↓/2.Note, that also g L=g R follows in this conﬁguration.The Fano factor of the full current noise is F=1/2,i.e.we recover the usual suppression of the shot noise characteristic for a symmetric double barrier structure.There is no spin accumulation in this conﬁguration,and,consequently,no eﬀect of the spin-ﬂip scattering on the Fano factor.The cross correlations in the’ferromagnetic’conﬁguration areS L↑↓=−g sfg↑g↓+g sf(g↑+g↓)|eV|.(16)Thus,in the limit of strong spin-ﬂip scattering the cross correlations become independent on g sf.Next we consider the symmetric’antiferromagnetic’conﬁguration g L↑=g R↓=g1and g L↓=g R↑=g2.The012gsf/(gL+gR)-0.1-0.05SLud/eIL0.50.60.70.8SL/eIL012gsf/(gL+gR)0.40.60.81IL/(gL+gR)eV(pL,pR)(pL=pR)(0.4,-0.4)(0.8,-0.8)(0,0)(0.4,0.4)(0.4,-0.4)(0.8,-0.8)(0.8,0.8)(p,p)(0.4,-0.4)(0.8,-0.8)FIG.2:Cross correlations,Fano factor and average currents (symmetric case).We assume symmetric contacts g L=g R and parametrize the magnetic properties with the spin po-larization p L(R)=(g L(R)↑−g L(R)↓)/(g L(R)↑+g L(R)↓).The upper part shows the Fano factor of the currentﬂuctuations in the left contacts for diﬀerent polarization conﬁgurations. Inset:average current.The lower part shows the spin-ﬂip in-duced cross correlations between↑-and↓-currents in the left terminals.Fano factor isF=1(g+2g sf)2 2g2sf g+2g sf.(17) The second term in the brackets in Eq.(17)can be either positive or negative.In the latter case F drops below the symmetric double barrier value of1/2.For the cross correlations we obtainS L↑↓2g2(g+2g sf)4 g(g+2g sf)3+(g1−g2)2 3g2+6gg sf+4g sf2 ,(18) where we introduced the abbreviation g=g1+g2.Again, the second term in the brackets in Eq.(18)is proportional to the spin accumulation of the island,which enhances the spin-ﬂip induced cross correlations.The transport properties for symmetric junctions are shown in Fig.2.For equal polarizations of both sides there is no eﬀect of spin-ﬂip scattering on the Fano fac-tor and average currents.However,the cross correlations do depend on the polarizations even in this case.For small g sf the cross correlations rapidly increase in mag-nitude.For g sf≫g L+g R the cross correlations become independent of the relative polarizations.Their absolute value,however,depends strongly on the absolute value of the polarization.For antiparallel polarizations the Fano factor diﬀers strongly from its value1/2in the unpolar-ized case.With increasing spin-ﬂip scattering rate,the4g sf /(g L +g R )S L u d /e I LS L /e I LFIG.3:Cross correlations,Fano factor and average currents (asymmetric case).We take here g L =4g R .The deﬁnition of the polarizations are taken over from Fig.2.Fano factor goes from a value larger than 1/2through a minimum,which is always lower that 1/2.Let us now turn to the general case of asymmetric junc-tions.The noise correlations are plotted in Fig.3.We have taken g L =4g R and various conﬁgurations of the polarizations 0.3and 0.7.The Fano factors and the av-erage currents are now diﬀerent for all parameter combi-nations.However,the variations of the Fano factors are small,i.e.they are alway close to the unpolarized case.This is diﬀerent for the cross correlations.Even for weak spin-ﬂip scattering they change dramatically if some of the polarizations are reversed.In conclusion we have suggested to use shot noise and cross correlations as a tool to study spin-ﬂip scattering in mesoscopic spin-valves [23].In a two-terminal device with antiferromagnetically oriented electrodes spin-ﬂip scattering leads to a transition from full Poissonian shot noise (Fano factor F =1)to a double-barrier behaviour (F =1/2)with increasing spin-ﬂip rate.We have pro-posed to measure the spin correlations induced by spin-ﬂips in a four-terminal device.If the spin-ﬂip scattering rate is small,the cross-correlation beween currents in ter-minal with opposite spin-orientation gives direct access to the spin-ﬂip scattering rate.Presently,we have as-sumed fully polarized terminals,but a generalization to arbitrary polarizations is straightforward.We acknowledge discussion with C.Bruder.W.B.was ﬁnancially supported by the Swiss NSF and the NCCR Nanoscience.M.Z.thanks the University of Basel for hospitality.During preparation of this manuscript,a work appeared,in which a similar model was studied[24].[1]M.A.M.Gijs and G.E.W.Bauer,Adv.Phys.46,285(1997).[2]G. A.Prinz,Phys.Today 282,1660-1663(1998);S.Datta and B.B.Das,Appl.Phys.Lett.56,665(1990);J.M.Kikkawa, D. D.Awschalom,Nature 397,139(1999);R.Fiederling et al.,Nature 402,787(2000);Y.Ohno et al.,Nature 402,790(2000);I.Malajovich et al.,Phys.Rev.Lett.84,1015(2000).[3]F.J.Jedema et al.,Nature 410,345(2000);Nature 416,713(2002).[4]Ya.M.Blanter and M.B¨u ttiker,Phys.Rep.336,1(2000).[5]Quantum Noise in Mesoscopic Physics ,ed.by Yu.V.Nazarov,Yu.V.(Kluwer,Dordrecht,2003).[6]V.A.Khlus,Sov.Phys.JETP 66,1243(1987).[7]G.B.Lesovik,JETP Lett.49,592(1989).[8]M.B¨u ttiker,Phys.Rev.Lett.65,2901(1990).[9]M.B¨u ttiker,Phys.Rev.B 46,12485(1992).[10]M.Henny et al.,Science 284,296(1999);S.Oberholzeret al.,Physica (Amsterdam)6E ,314(2000).[11]W.D.Oliver et al.,Science 284,299(1999).[12]T.Martin,Phys.Lett.A 220,137(1996);M.P.Anantram and S.Datta,Phys.Rev.B 53,16390(1996);G.B.Lesovik,T.Martin,and J.Torre´s ,Phys.Rev.B 60,11935(1999).J.Torres and T.Martin,Eur.Phys.J.B 12,319(1999).[13]J.B¨o rlin,W.Belzig,and C.Bruder Phys.Rev.Lett.88,197001(2002).[14]P.Samuelsson and M.B¨u ttiker,Phys.Rev.Lett.89,046601(2002).[15]F.Taddei and R.Fazio,Phys.Rev.B 65,134522(2002).[16]Y.Tserkovnyak and A.Brataas,Phys.Rev.B 64,214402(2001).[17]H.-A.Engel and D.Loss,Phys.Rev.B 65,195321(2002).[18]D.Loss and E.V.Sukhorukov,Phys.Rev.Lett.84,1035(2000);G.Burkard, D.Loss,and E.V.Sukho-rukov,Phys.Rev.B 61,R16303(2000);J.C.Egues,G.Burkard,and D.Loss,Phys.Rev.Lett.89,176401(2002).[19]K.E.Nagaev,Phys.Lett.A 169,103(1992);Phys.Rev.B 57,4628(1998).[20]In our calculation we neglect all charging eﬀects,i.e.we assume that g aσ≫e 2/h .We are also only interested here in current ﬂuctuations on time-scales longer than all RC -times.[21]M.Zareyan and W.Belzig (unpublished).[22]A similar eﬀect was recently reported in E.G.Mishchenko,cond-mat/0305003(unpublished).[23]The four-terminal structure suggested in Fig.1(a)is par-ticularly suitable.Without applying an external mag-netic ﬁeld the magnetic conﬁguration can be switched by changing the potentials of the diﬀerent terminals.[24]D.Sanch´e z et al.,cond-mat/0306132(unpublished).。

半导体低维物理讲义之八

Pcoh = P0 exp(−t / T2 )
2T2 ≤ T1
Bloch Oscillation
The motion of a wave packet centered around k in a periodic lattice under the influence of an external force F, e.g., an electric field, neglecting for the moment all scattering processes:
德布罗意波及其与能量德关系
各种长度范围
各种低维结构及其状态密度
量子点的各种制备方法
利用刻蚀方法制备的量子点结构
利用刻蚀方法制备量子点的步骤
采用自组装制备的量子点及其尺寸分布
外延生长的几种主要模式；自组装量子点中的应力分布
自组装量子点的形貌及其荧光谱
高指数面上生长的自组装量子点及其TEM照片
l B = B / 2eE
where B is the width of the band. The periodic motions in real and In momentum space are known as Bloch oscillation. Actually, the carriers in bulk semiconductors have no chance to complete such an orbit because the decoherence time T2 is too short. Condition for the observation of Bloch oscillation:
dk h = F = eE dt
Under the above conditions, the electron will perform a periodic orbit in k space in the direction of E. The duration of one orbit in k-space and the frequency are given by

Langmuir-Efficient Fluorescence Quenching in Carbon Dots by Surface-Doped Metals - Disruption of

†
Department of Chemistry and Laboratory for Emerging Materials and Technology, Clemson University, Clemson, South Carolina 29634, United States ‡ Air Force Research Laboratory, Propulsion Directorate, Wright-Patterson Air Force Base, Dayton, Ohio 45433, United States § University of Dayton Research Institute, Sensors Technology Oﬃce, Dayton, Ohio 45469, United States
Small semiconductor nanoparticles and related core−shell nanostructures, generally referred to as quantum dots (QDs) due to the presence of quantum conﬁnement eﬀects, have attracted much attention for their excellent optical properties and a variety of potential applications.1 Among well-established QDs are those based on insoluble cadmium salts, especially the popular and now commercially available CdSe/ZnS core−shell nanoparticles with various surface coatings.1−5 However, there have also been some signiﬁcant concerns on these presently dominating QDs, especially with respect to their toxicity associated with the heavy metal content.6,7 Therefore, the search for alternative QD-like optical nanomaterials that are nontoxic yet still high performance has continued.8−11 Nanoscale carbon particles have recently emerged as a unique class of optical nanomaterials targeting both biomedical and energy conversion applications.11−30 Small carbon nanoparticles upon surface functionalization by organic molecules were found to exhibit bright and colorful ﬂuorescence emissions. These strongly ﬂuorescent nanoparticles, dubbed “carbon dots” (Scheme 1),11 have been demonstrated for their competitive optical performance to that of well-established

海康威视 DS-2DP2427ZIXS-DE 440(F0)(P4) 270° Stitched 2

DS-2DP2427ZIXS-DE/440(F0)(P4)270° Stitched 24 MP PanoVu Camera with PTZHikvision DS-2DP2427ZIXS-DE/440(F0)(P4) 270° Stitched 24 MP PanoVu Camera with PTZ is able to capture panoramic images as well as close-up images. The panoramic images are captured by 6 sensors for 270° panorama monitoring. The integration of two cameras can locate the details fast over expansive area. Furthermore, with advanced video analysis and multiple targets tracking algorithms, the PanoVu camera features a wide range of smart functions for multiple targets within the panoramic view, including intrusion detection, line crossing detection, region entrance detection, and region exiting detection. The camera can output alarm signals and link the PTZ for tracking to improve the security efficiency. This product is suitable for the application scenarios that require expansive monitoring and detail capture, such as airports, stations, stadiums, playgrounds, scenic areas, and public squares.⏹High quality imaging with 24 MP resolution, up to 8160 × 2400 @30 fps for panoramic channels⏹Excellent low-light performance with DarkFighter technology⏹40x optical zoom and 16x digital zoom provide close up views over expansive areas⏹Expansive night view with up to 250 m IR distance⏹With one click on the panoramic channel, the PTZ channel shows the details automatically⏹Continous and stable manual tracking, auto-tracking, and panorama tracking⏹Automatic switch between multiple targets⏹Supports 7 alarm inputs, 2 alarm outputs, 1 audio input, and 1 audio outputDORIThe DORI (detect, observe, recognize, identify) distance gives the general idea of the camera ability to distinguish persons or objects within its field of view. It is calculated based on the camera sensor specification and the criteria given by EN 62676-4: 2015.DORI Detect Observe Recognize IdentifyDefinition 25 px/m 63 px/m 125 px/m 250 px/m [Panoramic channel]Distance38.6 m (126.6 ft.) 15.3 m (50.2 ft.) 7.7 m (25.3 ft.) 3.9 m (12.8 ft.)[PTZ channel]Distance (Tele)4137.9 m (13575.8 ft.) 1642.0 m (5387.1 ft.) 827.6 m (2715.2 ft.) 413.8 m (1357.6 ft.)SpecificationCameraImage Sensor [Panoramic channel]: 1/1.8" progressive scan CMOS, [PTZ channel]: 1/1.8" progressive scan CMOSMin. Illumination [Panoramic channel]Color: 0.0005 Lux (F1.0, AGC ON), B/W: 0.0001 Lux (F1.0, AGC ON); [PTZ channel]0.0005 Lux (F1.2, AGC ON), B/W: 0.0001 Lux (F1.2, AGC ON), 0 Lux with IRShutter Speed 1 s to 1/30000 sSlow Shutter YesDay & Night IR cut filterZoom [PTZ channel] 40x optical, 16x digitalMax. Resolution 8160 × 2400LensFocus Auto, semi-auto, manual, rapid focusFocal Length [Panoramic channel] 2.8 mm; [PTZ channel] 6.0 to 240 mmZoom Speed [PTZ channel] Approx. 5.6 sFOV Horizontal FOV 56.6° to 1.8°, vertical FOV 33.7° to 1.0°, diagonal FOV 63.4° to 2.0°Aperture Max. F1.0IlluminatorSupplement Light Type IRSupplement Light Range Up to 250 mSmart Supplement Light YesPTZMovement Range (Pan) 360°Movement Range (Tilt) -15° to 90° (auto flip)Pan Speed Pan speed: configurable from 0.1° to 210°/s; preset speed: 240°/sTilt Speed Tilt speed: configurable from 0.1° to 150°/s, preset speed 200°/sProportional Pan [Panoramic channel]: no; [PTZ channel]: yesPresets 300Patrol Scan 8 patrols, up to 32 presets for each patrolPattern Scan 4 pattern scans, record time over 10 minutes for each scanPower-off Memory YesPark Action Preset, pattern scan, patrol scan, auto scan, tilt scan, random scan, frame scan, panorama scan3D Positioning Yes PTZ Status Display Yes Preset Freezing YesScheduled Task Preset, pattern scan, patrol scan, auto scan, tilt scan, random scan, frame scan, panorama scan, dome reboot, dome adjust, aux outputVideoMain Stream [Panoramic channel]:50 Hz: 25 fps (8160 × 2400, 6120 × 1800, 5760 × 1696, 3840 × 1080), 60 Hz: 30 fps (8160 × 2400, 6120 × 1800, 5760 × 1696, 3840 × 1080); [PTZ channel]:50 Hz: 25 fps (2560 × 1440, 1920 × 1080, 1280 × 960, 1280 × 720) 60 Hz: 30 fps (2560 × 1440, 1920 × 1080, 1280 × 960, 1280 × 720)Sub-Stream [Panoramic channel]:50 Hz: 25 fps (2048 × 600, 1280 × 376)60 Hz: 30 fps (2048 × 600, 1280 × 376); [PTZ channel]:50 Hz: 25 fps (704 × 576, 640 × 480, 352 × 288) 60 Hz: 30 fps (704 × 480, 640 × 480, 352 × 240)Third Stream [Panoramic channel]: no[PTZ channel]:50 Hz: 25 fps (1920 × 1080, 1280 × 960, 1280 × 720, 704 × 576, 640 × 480, 352 × 288) 60 Hz: 30 fps (1920 × 1080, 1280 × 960, 1280 × 720, 704 × 480, 640 × 480, 352 × 240)Video Compression Main stream: H.265+/H.265/H.264+/H.264 Sub-stream: H.265/H.264/MJPEGThird stream: H.265/H.264/MJPEGAudioAudio Compression G.711alaw, G.711ulaw, G.722.1, G.726, MP2L2, AAC, PCMAudio Sampling Rate PCM: 8 kHz, 16 kHz, 32 kHz, 48 kHz; MP2L2: 16 kHz, 32 kHz, 48 kHz; AAC: 16 kHz, 32 kHz, 48 kHzNetworkNetwork Storage NAS (NFS, SMB/CIFS), ANRProtocols IPv4/IPv6, HTTP, HTTPS, 802.1x, QoS, FTP, SMTP, UPnP, SNMP, DNS, DDNS, NTP, RTSP, RTCP, RTP, TCP/IP, UDP, IGMP, ICMP, DHCP, PPPoE, BonjourAPI Open Network Video Interface (Profile S, Profile G, Profile T), ISAPI, SDK, ISUP Simultaneous Live View Up to 20 channelsUser/Host Up to 32 users. 3 user levels: administrator, operator, and userSecurity Authenticated username and password, MAC address binding, HTTPS encryption, 802.1X authenticated access, IP address filterClient iVMS-4200, HikCentral Pro, Hik-Connect Web Browser IE10-11, Chrome 57+, Firefox 52+, Safari 12+ ImageDay/Night Switch Day, night, auto, scheduled-switchImage Enhancement BLC, HLC, 3D DNRWide Dynamic Range (WDR) [Panoramic channel] no, [PTZ channel] 120 dB Defog [Panoramic channel] no; [PTZ channel] optical defog Image Stabilization EISRegional Exposure YesRegional Focus YesImage Settings Saturation, brightness, contrast, sharpness, gain, and white balance adjustable by client software or web browserImage Parameters Switch YesPrivacy Mask Programmable polygon privacy masks (8 for panoramic channel, 24 for PTZ channel), mask color or mosaic configurableSNR ≥ 55 dBInterfaceEthernet Interface 1 RJ45 10M/100M/1000M self-adaptive Ethernet portFiber Optical 1 FC interface, built-in fiber module, 1000M, TX1310/RX1550 nm wavelength, single module fiber, up to 20 km transmission distanceOn-board Storage Built-in memory card slot, support microSD/microSDHC/microSDXC cards, up to 256 GBAlarm 7 alarm inputs, 2 alarm outputsAudio 1 input (line in), max. input amplitude: 2-2.4 vpp, input impedance: 1 KΩ ± 10%; 1 output (line out), line level, output impedance: 600 ΩRS-485 1 RS-485 (Half duplex, HIKVISION, Pelco-P, Pelco-D, self-adaptive) Reset YesEventSmart Event Line crossing detection, region entrance detection, region exiting detection, unattended baggage detection, object removal detection, intrusion detectionSmart Tracking Manual tracking, auto-tracking, panorama tracking. Support patrol tracking among multiple detection scenesAlarm Linkage Upload to FTP/NAS/memory card, notify surveillance center, send email, trigger alarm output, trigger recording, and PTZ actions (such as preset, patrol scan, pattern scan)Deep Learning FunctionFace Capture Detects up to 30 faces simultaneously,Supports detecting, tracking, capturing, grading, selecting of face in motion, and outputs the best face picturePeople Density Supports detecting the level of people density in the configured area Congestion Alarm YesGeneralPower 36 VDC, max. 135 W (including max. 12 W for IR); Hi-PoE, max. 75 W Operating Condition -40°C to 70°C (-40°F to 158 °F). Humidity 90% or less (non-condensing) Wiper NoDemist YesMaterial ADC12Dimension Ø 433.5 mm x 430.4 mm (Ø 17.07" x 16.94")Weight Approx. 18 kg (39.68 lb.)ApprovalSafetyUL (UL 62368-1);CB (IEC 62368-1:2014+A11);CE-LVD (EN 62368-1:2014+A11:2017), BIS (IS 13252(Part 1):2010/IEC 60950-1: 2005); LOA (IEC/EN 60950-1)Environment CE-RoHS (2011/65/EU); WEEE (2012/19/EU); Reach (Regulation (EC) No 1907/2006)ProtectionIP67 Standard, Lightning Protection, Surge Protection and Voltage Transient Protection, ±6kV Line to Gnd, ±3kV Line to Line, IEC61000-4-5, IK10⏹Typical ApplicationHikvision products are classified into three levels according to their anti-corrosion performance. Refer to the following description to choose for your using environment.This model has NO SPECIFIC PROTECTION.LevelDescriptionTop-level protectionHikvision products at this level are equipped for use in areas where professional anti-corrosion protection is a must. Typical application scenarios include coastlines, docks, chemical plants, and more.Moderate protectionHikvision products at this level are equipped for use in areas with moderate anti-corrosion demands. Typical application scenarios include coastal areas about 2 kilometers (1.24 miles) away from coastlines, as well as areas affected by acid rain.No specific protectionHikvision products at this level are equipped for use in areas where no specific anti-corrosion protection is needed.⏹Available ModelDS-2DP2427ZIXS-DE/440(F0)(P4)⏹Dimension⏹Accessory ⏹OptionalDS-1668ZJ-P DS-1668ZJ(20) DS-1603ZJ-Pole-PDS-1603ZJ-P。

ABB i-bus EIB KNX SV S 30.640.5 电源设备说明说明书

S K 0036 B 02The EIB / KNX Power Supply produces and monitors the EIB / KNX system voltage. The bus line is decoupled from the power supply with the integrated choke.The power supply is connected to the bus line with a bus connection terminal. A reset is triggered by pressing the reset push button and lasts for 20 seconds (regardless of the duration of the push button action). The bus line is discon-nected from the power supply and the bus devices connected to this bus line are returned to their initial state.If the line should be dis c onnected for a longer period, the bus connection terminal must be removed from the power supply.A 30 V DC auxiliary voltage is made available via an additional connection terminal. This voltage can be used to supply a further bus line (in connection with a separate choke). The 30 V DC auxiliary voltage may not be used for other purposes.Technical data Power supply– P ower supply – P ower consumption – P ower loss230 V AC +10/–15%, 45 ... 65 Hz< 45 VA < 6 WOutputs– E IB / KNX output – E IB / KNX nominal voltage – A uxiliary voltage output – A uxiliary voltage –N ominal current (total of EIB / KNX and auxiliary voltage output)– S ustained short-circuit current – M ains failure back-up time 1 line with integrated choke 30 V DC +1/–2 V , SELV 1 (without choke)30 V DC +/–1 V , SELV640 mA, short-circuit-proof < 1.5 A 200 msOperating and display elements– G reen LED – R ed LED – R eset push button– R ed LED“ON“: output voltage is OK…I>I max “: overload or short circuit Reset at the EIB / KNX output (starts when the push button is pressed and lasts 20 s)Reset at the EIB / KNX output Connections– P ower supply– E IB / KNX output – A uxiliary voltage output3 srew terminals Cable cross-section:multi-core 0.2 – 2.5 mm 2single-core 0.2 – 4.0 mm 2Bus connection terminal (black/red)Connection terminal (yellow/grey)Type of protection– I P 20, EN 60 529Ambient temperature range– O peration – S torage – T ransport– 5 °C ... + 45 °C – 25 °C ... + 55 °C – 25 °C ... + 70 °CDesign– M odular installation device, pro M Housing, colour – P lastic housing, grey Mounting – O n 35 mm mounting rail,DIN EN 60 715Dimensions– 90 x 108 x 64.5 mm (H x W x D)Mounting depth/width – 68 mm/ 6 modules at 18 mm Weight – 0.35 kgCertification – E IB / KNX-certifiedCE norm– I n accordance with the EMC guideline and the low voltage guidelineSwitch on the mains voltage once the device has been correctly installed.The green “ON” LED lights up.All the other LEDs are switched off. The device is functioning correctly.Dimension drawingDevice connectionInstallation and commissioning。

英语秦荻辉科技英语写作习题以及答案

英语秦荻辉科技英语写作习题以及答案练习1I、在下列每个句子的空白处填上适当的冠词（如果必要的话），然后将句子译成汉语：1. There has been _____ ever greater interest in this subject.2. The power rating is the maximum power the resistor can safely dissipate without too great _____ rise in temperature.3. Its primary disadvantage is _____ increase in noise.4. _____ successful design of the equipment requires _____ detailed knowledge of the performance specifications.5. In _____ Bohr model of the hydrogen atom, _____ single electron revolves around _____ single proton in a circle of radius R.6. The unit of frequency is _____ hertz.7. If _____ voltage is applied across _____ circuit, _____ electric current will flow in _____ circuit.8. _____ Fig. 5-1 shows _____ Oersted’s experiment.9. We should use _____ 18-volt battery here.10. _____ machine is _____ device for transmitting force to accomplish _____ definite purpose.11. _____ hydraulic press will be considered in _____ Chapter 14.12. _____ study of fluids in motion is one of _____ more difficult branches of mechanics because of _____ diversity of phenomena that may occur.13. It is easy to determine _____ value of _____ parameter μ.14. By _____ Eq. (2-1) we have _____ following relation.15. It is necessay to use _____ S-shaped tube here.16. The authors work at _____ University of Texas at _____Arlinton.17. This is _____ R-bit transformer.18. _____ XOR gate must be used here.II、将下列句子译成英语，注意正确地使用冠词：1、这是一个h参数（parameter）。

Superconductivity in one dimension

Superconductivity in one dimension
K.Yu. Arutyunov1,2 , D.S. Golubev3,4 , and A.D. Zaikin3,4
1
NanoScience Center, Department of Physics, University of Jyv¨ askyl¨ a, PB 35, FI-40014 Jyv¨ askyl¨ a, Finland 2 Nuclear Physics Institute, Moscow State University, 119992 Moscow, Russia 3 Forschungszentrum Karlsruhe, Institut f¨ ur Nanotechnologie, 76021, Karlsruhe, Germany 4 I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physics Institute, 119991 Moscow, Russia Superconducting properties of metallic nanowires can be entirely diﬀerent from those of bulk superconductors because of the dominating role played by thermal and quantum ﬂuctuations of the order parameter. For superconducting wires with diameters below ∼ 50 nm quantum phase slippage is an important process which can yield a non-vanishing wire resistance down to very low temperatures. Further decrease of the wire diameter, for typical material parameters down to ∼ 10 nm, results in proliferation of quantum phase slips causing a sharp crossover from superconducting to normal behavior even at T = 0. A number of interesting phenomena associated both with quantum phase slips and with the parity eﬀect occur in superconducting nanorings. We review recent theoretical and experimental activities in the ﬁeld and demonstrate dramatic progress in understanding of the phenomenon of superconductivity in quasi-one-dimensional nanostructures.

量子点在显示应用中的研究进展

第 38 卷第 7 期2023 年 7 月Vol.38 No.7Jul. 2023液晶与显示Chinese Journal of Liquid Crystals and Displays量子点在显示应用中的研究进展林永红，黄文俊，张胡梦圆，刘传标，刘召军*（南方科技大学电子与电气工程系，广东深圳 518055）摘要：量子点因具有量子产率高、吸收范围宽、发光光谱窄、发光波长可调等优异的光电特性，使其在显示中展现出巨大的应用前景。

化学溶液法合成的量子点不仅具有制备工艺简单和成本低廉等优势，而且也可通过多种方式实现高分辨率的显示器件。

量子点优异的电致发光和光致发光特性，使其在显示领域具有重要的研究价值。

电致发光的量子点发光二极管，在材料合成和器件结构的研究都获得了快速的发展，为实现商业化的显示器件提供了必要基础。

利用量子点的光致发光显示器件获得了更广的色域，呈现出了更丰富的视觉效果。

本文从量子点的特性、电致发光和光致发光出发，介绍了量子点在显示中的应用，总结了量子点器件的研究现状，分析了在器件发展中存在的问题。

关键词：量子点；电致发光；光致发光；显示中图分类号：TN383；O482.31 文献标识码：A doi：10.37188/CJLCD.2022-0265Research progress of quantum dots in display applicationsLIN Yong-hong，HUANG Wen-jun，ZHANGHU Meng-yuan，LIU Chuan-biao，LIU Zhao-jun*（Department of Electronic and Electrical Engineering， Southern University of Science and Technology，Shenzhen 518055， China）Abstract： The excellent optoelectronic characteristics of quantum dots， such as high quantum yield， wide absorption range， narrow emission spectrum and adjustable emission wavelength， make them show great application prospects in displays.Quantum dots synthesized by chemical-solution methods not only have the advantages of a simple preparation process and low cost， but also can be used to achieve high-resolution displays in various ways. The excellent electroluminescence and photoluminescence of quantum dots make them play an important role in the research of displays.Electroluminescent quantum-dot light-emitting diodes have achieved a rapid development in the research of material synthesis and device structure， which provides a foundation for the realization of commercial displays. The displays using the photoluminescence of quantum dots have attained a wider color gamut and presented a richer visual effect. This paper introduces the characteristics， electroluminescence and photoluminescence of quantum dots， and their applications in displays， summarizes the research status of quantum-dot devices， and analyzes the existing problems in the 文章编号：1007-2780（2023）07-0851-11收稿日期：2022-11-12；修订日期：2022-12-03.基金项目：广东省基础与应用基础研究基金（No.2021B15113001）；深圳市科技计划项目（No.KQTD20170810110313773，No.JCYJ20190812141803608）Supported by Fundamental and Applied Fundamental Research Fund of Guangdong Province （No.2021B1515130001）；Shenzhen Science and Technology Program （No.KQTD20170810110313773，No.JCYJ20190812141803608）*通信联系人，E-mail： liuzj@第 38 卷液晶与显示development of quantum-dot devices.Key words： quantum dots； electroluminescence； photoluminescence； displays1 引言在科技日新月异的今天，显示设备作为一种信息交换媒介，在现代信息化社会占有越来越重要的地位，无论是最初的阴极射线管（Cathode Ray Tube，CRT）显示器、液晶显示器（Liquid Crystal Display，LCD）和发光二极管（Light-Emitting Diode，LED），还是如今的有机发光二极管（Organic Light-Emitting Diode，OLED）、量子点发光二极管（Quan‑tum Dot Light-Emitting Diode，QLED）、Mini Light-Emitting Diode （Mini-LED）和Micro Light-Emit‑ting Diode （Micro-LED）。

超快光学第14章超快光谱

Change in probebeam transmitted intensity or power
Excited molecules in state 2: stimulated emission of probe
Excited molecules in state 1:
0
absorption of probe
pulse energy or average power vs.delay.
Detector
Change in probe pulse energy
Variable delay, t
Eex(t)
Excite pulse
Esig(t,t) The excite pulse
changes the sample
state.
The excited states only live for a finite time (this is the quantity we’d like to find!), so the absorption and refractive index recover.
The simplest ultrafast spectroscopy method is the Excite-Probe Technique.
Medium under study
Excitation pulses
Signal pulse
Variably delayed Probe pulse
Delay
The signal pulse energy (or change in energy) is plotted vs.delay. The experimental temporal resolution is the pulse length.

半导体器件原理

2019/3/7
Semiconductor Devices
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中国科学技术大学物理系微电子专业
§6.3 存储器件
• 主要类型
静态存储器SRAM 动态存储器DRAM 非易失性存储器NVM
• 结构 • 特点
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Semiconductor Devices
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中国科学技术大学物理系微电子专业
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中国科学技术大学物理系微电子专业
• 沟道杂质起伏对于沟长度在0.1μm量级的MOSFET，沟道中的电离杂质可以小到只有几十个原子，因此杂质原子含量的统计起伏可导致对器件性能的明显影响，这种起伏无论在一个圆片内的各芯片之间或各圆片之间都不可避免，因此会造成产品的一致性问题，对于ULSI的可生产性必须考虑这种效应。杂质起伏主要反映在器件阈值电压的起伏上。
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中国科学技术大学物理系微电子专业
Carbon Nanotubes
CNT is a tubular form of carbon with diameter as small as 1 nm. Length: few nm to cm. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits: 1.Carrier mobility ~ 100,000 cm2/Vs 2.Young’s modulus over 1 Tera Pascal, as stiff as diamond; 3. Tensile strength ~ 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

超快光学放大

Before we consider amplification, recall that the intracavity pulse energy is ~50 times the output pulse energy. So we have more pulse energy. How can we get at it?
Jsto= stored pump fluence = Jpump (lpump/lL) Jsat= saturation fluence (material dependent)
At low intensity, the gain is linear:
At high intensity, the gain “saturates” and hence is constant:
Pulse energy vs. Repetition rate
Pulse energy (J)
100
10-3
Regen + multimulti-pass 10-6
10-9
10-3
100
Regen + multipass
Regen
1 W average power
RegA
Cavity-dumped oscillator
The Amplification of Ultra-
Short pulse oscillator
short Laser Pulses
t
Dispersive delay line
Most of this lecture
t
Solid state amplifier
courtesy of
Francois Salin

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~ X1.14 ~ X2.50
Thomas Skotnicki
Thomas Skotnicki
• CMOS
2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 17 15.3 14.0 12.8 11.7 10.7 9.7 8.9 8.1 7.4 0.95 0.85 0.85 0.85 0.85 0.75 0.75 0.75 0.75 0.75 0.9 1.1 0.85 1.1 0.8 1
0.40 2008 2010 2012 2014
Thomas Skotnicki
• CMOS
Technologies – Trends, Scaling and Issues
14
DIFFICULT TO BOOST CURRENT FURTHER
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024
Thomas Skotnicki IEDM 2010 Short Course • CMOS Technologies – Trends, Scaling and Issues 1
OUTLINE
Introduction CMOS Technology Roadmap (ITRS) overview Density scaling (Gate length/pitch) Power scaling (low power/leakage) Voltage scaling SOC requirements and prerogatives Performance scaling – New insight
Pdyn = n x Frequency x Cload x Vdd2
3500
SPEED-HUNGRY PARADIGM
Performance Index
3000 2500 2000 1500 1000 500 0 0
•
+
POWER-THRIFTY PARADIGM
2 cores
=
HUMAN NATURE
Kmob (mobility Saturated ! improvement) - 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 Kvs (saturation Questionable ! velocity impr.) - 1.10 1.11 1.11 1.12 1.13 1.13 1.14 1.15 1.15 1.16 1.17 1.17 1.18 1.19 1.20 1.20 Kbal Idsat (imp. Improbable ! due to ballistic - 1 1 1 1 1.06 1.12 1.19 1.26 1.34 1.42 1.50 1.59 1.69 1.79 1.90 2.01 transport)
HP Lg, nm LOP Lg, nm
Lg, nm
HP Tox_el, nm LOP Tox_el, nm LSTP Tox_el, nm HP Vdd, mV LOP Vdd, mV LSTP Vdd, mV
Lg LOP reads at around 40nm rather than 20nm! Even less Vdd scaling than predicted !
IMPORTANT CHANGES INTRODUCED IN METHODOLOGY
Thomas Skotnicki
6
Reality has turned out to be more difficult than ITRS predictions
4 SCALING AS OF ITRS 2005 3.5 3 20 2.5 Tox, nm 2 1.5 1 0.5 2005 2 2010 Vdd, mV
1
0.9
0.9
0.8
0.8
0.7
0.7
13
Technologies – Trends, Scaling and Issues
ITRS 2009 : MAIN FEATURES (2)
1.20
Lg, nm
1.10
HP ITRS 2009
7nm = Big Litho Challenge Vdd, V
Thomas Skotnicki
1 core
1000 2000 3000 Frequency (MHz)
4000
10
SO….ONCE AGAIN WE NEED FREQUENCY, BUT BULK CANNOT OFFER IT ANY LONGER
ITRS 2009 (CV/I)-1
RO FO=1 Bulk
Thomas Skotnicki
8
POWER LIMITATION CHANGES PARADIGM
multicore
Thomas Skotnicki
9
DOES THE MOORE’s LAW CONTINUE ?
YES, since we sell to customers system performance rather than frequency
12
ITRS 2009 : MAIN FEATURES (1)
ITRS 2009 Year 2009 2010 2011 2012 2013 2014 2015 HP 27 24 22 20 18 17 Lgate HP nm 29 Vdd V 1.00 0.97 0.93 0.90 0.87 0.84 0.81 EOT, Bulk nm 1 0.95 0.88 0.75 0.65 0.55 0.53 0.7 0.68 0.60 …….. SOI '' 0.77 …….. DG '' ITRS 2009 Year 2009 2010 2011 2012 LOP 29 27 24 Lgate LOP nm 32 Vdd V 0.95 0.95 0.85 0.85 EOT, Bulk nm 1 0.9 0.9 0.85 …….. SOI …….. DG 2016 2017 2018 2019 2020 2021 2022 2023 2024 15.3 14.0 12.8 11.7 10.7 9.7 8.9 8.1 7.4 0.78 0.76 0.73 0.71 0.68 0.66 0.64 0.62 0.60 0.57 0.57 0.54 0.5 0.7 0.67 0.64 0.62 0.59 0.57 0.55 0.53
HINT : WORK ON PMOS !!!
In/Ip -
–YES, BUT IT ALREADY HAS BEEN +/- DONE !
1.3 1.29 1.27 1.26 1.25 1.24 1.22 1.21 1.20 1.19 1.18 1.16 1.15 1.14 1.13 1.12
Data from Intel
1.00
0.90
10
0.80
Bulk
0.70
0.60
Relaxation in EOT; Bulk–>SOI->DG SOI DG EOT,nm
0.6V = +/- OK
0.50
0.5nm = very HK and no pedestal SiO2 ?
1 2016 2018 2020 2022 2024 2026
FLAT
Bulk
RO FO=4
Thomas Skotnicki
• CMOS
Technologies – Trends, Scaling and Issues
11
DIFFICULT CHALLENGES
Thomas Skotnicki
• CMOS
Technologies – Trends, Scaling and Issues
HK Introduction, but before and after this point stagnation in scaling
Thomas Skotnicki
3,5 3 Volt 2,5 2 1,5 1 0,5 0 1980 1992
1 .2 V p l a t e a u
1 .1 V 1 .0 V
0.5
2013 2014 2015 2016 22 18 17 15.3 0.8 0.8 0.75 0.75 0.8 0.9 0.85 0.8 0.75 0.8 0.8
2017 2018 2019 2020 2021 2022 2023 2024 14.0 12.8 11.7 10.7 9.7 8.9 8.1 7.4 0.7 0.7 0.65 0.65 0.6 0.6 0.6 0.6 0.7 0.65 0.75 0.73
700 500 350
1995
250
1998
180
2000
120
2002
90200465源自2007452010
32
2015
Y e a r o f p r o d u c ti o n (I T R S )
7
STATIC POWER CRISIS ADDS TO DYNAMIC POWER CRISIS
0.7
0.7
0.65 0.65
0.6
0.6
ITRS 2009 Year 2009 2010 2011 2012 2013 2014 LSTP 32 29 27 22 18 Lgate LSTP nm 38 Vdd V 1.05 1.05 1.05 1.00 0.95 0.95 EOT, Bulk nm 1.2 1.2 1.2 1 0.9 …….. SOI 1 0.95 …….. DG