Acoustic Transfer Functions Derived from Finite Element Modeling for Thermoacoustic Stability Predic

合集下载

(整理)光电名词中英索引

(整理)光电名词中英索引

光电名词中英索引光电名词中英索引-AA M light振幅调制光,调幅光A-frameA形架a.c. circuit交流电路a.c. discharge交流放电a.f. oscillator声频振荡器A/D conversion仿真-数字转换A/D Converter模拟数字讯号转换器abac算图,列线图abampere电磁系电流单位abaxial轴外的,离轴的Abb'e Condenser阿贝聚光器Abb'e constant阿贝常数Abb'e Illumination阿贝照明Abb'e Porro阿贝坡若Abb'e Prism阿贝棱镜Abb'e Refractometer阿贝折射计Abb'e Sine Condition阿贝正弦条件Abbe apertometer阿贝〔数值〕孔径计Abbe condenser阿贝聚光镜Abbe constant阿贝常数Abbe double-diffractionprinciple阿贝双衍射原理Abbe eyepiece阿贝目镜Abbe illuminator阿贝照明器Abbe invariant阿贝不变量Abbe number阿贝数,色散系数Abbe photometric law阿贝光度定律Abbe prism阿贝棱镜Abbe refractometer阿贝折射计Abbe resolution criterion阿贝分办率判断Abbe treatment阿贝处理Abbe's formula阿贝公式Abbe's number阿贝数Abbe's principle阿贝原理Abbe's sine condition阿贝正弦条件Abbe's sine rule阿贝正弦定则Abbe's theory of image formation阿贝成像理论Abbe-Konig prism阿贝-柯尼希棱镜Abbe-type vertical metroscope 阿贝型立式测长义aberrated lens system有像差透镜系统aberrated optics有像差光学系统aberrating medium致〔像〕差媒质Aberration像差aberration balancing像差平衡aberration blur circle像差模糊图aberration constant光行差常数,光行差恒量aberration correction像差校正aberration curve像差曲线aberration figure像差斑,像差图形aberration function像差函数aberration haze像差光雾aberration ofreconstructed wave重建波〔的〕像差aberration residuals残余像差Aberration Sensor像差感应器aberration-free system无像差系统aberrationless无像差的ablation(1)冲蚀,烧蚀,消融(2)切除ablative flashlamp消融闪光灯,烧蚀闪光灯ablative recording〔光〕冲蚀记录Ablative Wall Flashlamp闪光壁灯,剥壁闪光灯Abney level阿布尼水平器Abney mounting for concave grating阿布饰凹面光栅装置abnormal反常,异常abnormal dispersion glass反常色散玻离abnormal glow discharge 反常辉光放电abnormal refraction反常折射above-critical state超临界〔状〕态above-threshold operation method超阈值运转法(激光器)abradant磨料abrade磨蚀,擦伤abrased glass磨砂玻离,毛玻璃abrasion磨蚀Abrasion Maarks磨耗纹abrasion resistance磨蚀阻力Abrasive磨料abrasive disk(1)研磨盘(2)砂轮abrasive fog磨擦灰雾abrasive grit磨料粒度abrasive hardness研磨硬度,耐磨硬度abrasive material研磨材料abrasive powder研磨粉abrasive slurry of corundum金钢砂磨剂abrasive wear磨蚀,磨损abrideged monochromator 滤色单色仪AbridgedSpectrophotometer筒缩分光光度计abrupt突变、陡变abrupt contrast border突变衬比界,陡变友差界abrupt junction突变结,阶跃结abruption(1)隔断(2)断裂abscissa横坐标absentee layer虚设层absest(=asbestos或asbestus)石棉absolute atmosphere绝对大气压absolute black body绝对黑体absolute brightness绝对亮度absolute calibration绝对校准Absolute Coordinate绝对坐标absolute detector response检测器绝对响应〔值〕absolute deviation绝对偏差absolute error绝对误差absolute index ofrefraction绝对折射率absolute luminance threshold(1)绝对〔光〕亮度阈(2)绝对发光率阈Absolute LuminanceThresshold绝对照明底限absolute measurement绝对测量absolute optical frequency绝对光频测量absolute optimal function绝对最佳函数absolute parallax绝对相位Absolute Purity Thresshold 绝对纯度底限Absolute RefractiveIndex绝对折射率absolute sensitivity绝对灵敏度Absolute Signal Delay绝对信号延时absolute stability(1)绝对稳定性(2)绝对稳定度absolute temperature绝对温度Absolute Temperature Scale 绝对温标Absolute Threshold绝对界限absolute unite绝对单位absolute value绝对值Absolute Vector绝对矢量absolute zero绝对零度absorb(1)吸收(2)减震absorbability可吸收性absorbable可吸收〔的〕Absorbable implant (scleral buckling method)可吸收之植入物(巩膜扣环法) Absorbance吸收率absorbance index(1)吸收性(2)吸收率吸光率,吸光本领absorbed layer被吸收层absorbed power被吸收率absorbent(1)吸收质(2)吸收体absorber(1)吸收器(2)吸收体(3)减震器absorbing apodisation screen吸收切趾屏absorbing crystal吸收晶体absorbing inclusion吸收掺杂absorbing medium吸收媒质absorbing phase strip吸收相位遮板absorbing power吸收本领absorbing sheet吸收片absorbing unidimensional apodisator吸收单维切趾器Absorbing Wedge吸收光劈Absorptance吸收比absorptiometer(1)液体吸收气计(2)吸收比色计absorptiometry吸收测量学Absorption吸收absorption hologram吸收全息图Absorption Attenuator选择性吸收Absorption Band吸收光带absorption capacity吸收本领Absorption Cell吸收匣absorption characteristic 吸收特性Absorption Ciefficient吸收系数absorption coefficient吸收系数absorption colour吸收色absorption control吸收控制Absorption Curve吸收曲线Absorption Discontinuity 间歇吸收absorption dynamometer 吸收功率计absorption edge吸收限absorption effect吸收效应absorption factor吸收因子Absorption Frequency Meter吸收性频率计Absorption Index吸收指数Absorption Indication吸收指示剂Absorption Lens吸收透镜absorption level(1)吸收能级(2)吸收率absorption limit吸收限Absorption Line吸收谱线Absorption Loss吸收损失absorption mean free path吸引平均自由〔路〕程absorption notch吸收凹陷Absorption of Radiation吸收调制Absorption Peak辐射吸收absorption rate吸收率Absorption Selective吸收光谱学Absorption Spectroscopy吸收锋absorption spectrum吸收〔光〕谱absorption wave-meter吸收式波长计absorption-dip(1)吸收〔引起的〕倾斜(2)吸收〔引起的〕凹陷absorption-free materiall无吸收材料absorptive吸收的absorptive lens吸收透镜absorptive power吸收本领absorptive-type modulator吸收型调制器Absorptivety吸收率Absorptivie Attenuator吸收衰减器absorptivity(1)吸收性,吸收能力(2)吸收率abstract code抽像代码abundance(1)丰度(2)分布量abunits(e.m.u.)〔c.g.s〕电磁系单位abut (abutment)(1)支座,支架(2)邻接abvolt〔c.g.s〕电磁系电势单位,绝对伏特(108伏特) AC-powered magnet交流电力式磁铁AC-powered photostimulator交流式光刺激器AC-powered slitlamp biomicroscope交流电力式细隙灯acceleratedphosphorescence加速发磷光accelerating electrode加速电极accelerating lens加速〔电子〕透镜accelerating potential加速〔电〕势差,加速〔电〕位差Accelerating Voltage加速电压Acceleration Space加速空间accelerator(1)加速器(2)〔显影〕促进剂accelerograph自动加速度记录仪Accentuated Contrast加动对反差accentuation(1)加重(2)频率校正(3)对比accentuator(1)加重器(2)频率效正电路Acceptance Angle接受角Acceptance Angle Plotter接受角绘图器Acceptance Cone接受锥体acceptance gauge验收规Acceptance Pattern接受图Acceptor受体acceptor density受主浓度acceptor impurity受主杂质acceptor impurity level受主杂质能级acceptor level受主〔能〕级acceptor site受主〔能〕级access(1)入口通路(2)取数(3)存取(泛指取数或存数) Access Coupler出入偶合器access time存取时间,取数时间access width存取位数accessory零任,附件,附属设备accidental degeneracy随机简并度accidental error偶然误差Accommodation调节,适应Accommodation Limits调节极限accommodometer眼调节计Accomulator蓄信器accumulation(1)累积,积蓄(2)存储accumulation point聚集点accumulative error累积误差accumulator(1)存储器(2)蓄电池(3)累积器accumulator register累加寄存器accuracy(1)准确(2)准确度accuracy grade准确度等级accuracy of test glass玻璃样板准确度acetate base醋纤片基acetate cellulose butyrate 醋酸纤维丁酯Acetate Film醋酸膜acetic醋的acetic acid醋酸acetone丙酮acetonitrile乙青acetophenone photoreduction乙洗苯苯光致还原acetyl cellulose乙洗纤维素acetylene(1)乙炔,电石气(2)双亚乙基achloropsia绿色盲achromat消色差透镜,消色差镜头achromate色盲Achromatic消色差的achromatic coating消色差镀膜Achromatic Color消色色彩achromatic colour无彩色achromatic condenser消色差聚光镜achromatic coronagraph消色差日冕仪achromatic doublet消色差双合透镜achromatic fringe消色差条纹achromatic image消色差块achromatic lens消色差透镜Achromatic Lens, Achromat消色差透镜achromatic light白光,消色差光,无彩〔色〕光achromatic microobjective消色差显微物镜achromatic objective消色差物镜Achromatic Point消色点achromatic prism消色差棱镜achromatic quarter waveplate 消色差四分之一波片achromatic telescope消色差望远镜achromatic triplet消色差三合〔透〕镜achromatic wedge消色差光劈,消色差光楔Achromatism消色差性achromatizarion消色差achromatized〔已〕消色差〔的〕achromatopsia全色盲acicular针状的acicular crystal针状晶体acid酸、酸性的acid developmentacid proof耐酸的acid wash酸洗的acid-free无酸的acidic solution酸溶液acidity(1)酸性(2)酸度acme thread梯型螺纹Acolight音灯acoustic beam deflector 声束偏转器acoustic branch声频支acoustic coupler声音藕合器;音效藕合器Acoustic Delay Line声延迟线acoustic diffraction grating声衍射栅acoustic dispersion声频散acoustic emission wave 声发射波acoustic field声场acoustic hologram声全息图acoustic holographic system声全息系统acoustic holography声全息术acoustic image声像acoustic imaging声成像Acoustic ImpedanceAcoustic Interferometer 声干涉仪acoustic microscopy声显微术Acoustic Radiation Pressure声发射压力acoustic signal声频信号Acoustic Surface Wave 声表面波acoustic surfacewave(ASW)声面波acoustic to optical image converter声光像转换器Acoustic Wave Filter声波滤器acoustic wave propagation声波传播Acoustical Conduction 声导acoustical hologram声波全像体Acoustical Holography 声波全像术Acoustical Units声学单位acoustics(1)声学(2)音质Acousto Photorefractive Effect声光折射效应acousto-optic声光的acousto-optic beam positioning声光束定位acousto-opticBragg-diffraction声光布喇格衍射acousto-optic cavity声光腔acousto-optic cell声光调制器,声光盒Acousto-Optic Deflection声光偏转,声光偏差Acousto-Optic Deflector声光致偏器Acousto-OpticDiffraction声光绕射acousto-optic effect声光效应acousto-optic filter声光滤波器acousto-optic interaction声光相互作用acousto-optic laser声光激光器acousto-optic light deflector 声光偏转器acousto-optic materiall声光材料acousto-opticmode-locker frequency doubler声光锁模倍频器Acousto-Optic Modulation声光调制acousto-optic modulator声光调制器acousto-optic Q-switching声光Q开关acousto-optic scanner声光扫瞄器Acousto-Optic Shutters声光快门acousto-optically tunedlaser声光调谐激光器acousto-photorefractive effect 声光折射效应Acoustooptic Effect声光效应acoustooptics声光学acquiring(1)探测(2)照准(3)瞄准acquisition(1)探测,发现(2)捕获、拦截(3)目标显示acquisition equipment捕获装置actice illumination(1)有源照明(2)主动照明Actinic光化(性)的actinic absorption光化吸收actinic achromatism光化消色差〔性〕Actinic Focus光化焦点Actinic Glass光化玻璃Actinic Radiation光化辐射actinicity(1)光化性(2)光化度actinides铜类元素Actinism光化学actinium(Ac)锕actinochemistry露光化学actinography(1)光能测定仪(2)辐射仪actinology(1)光化学(2)射线化学Actinometer露光计actinometry光能测定术,曝光测定术、光作用测定术actinomorphic辐射对称的actinotherapy射线疗法,放射疗法action(1)作用(2)主动力(3)作用量action photography动态摄影action radius作用半径,有效距离action spectrum作用光谱activate(1)激活、活化(2)起动,触发activated carbon活性碳activated carrier(1)激活载流子(2)激活载体activated silicate glass激活的硅酸盐玻璃activated state激活态,活化态activated switch起动开关activating agent激化剂,活化剂activation(1)激活、活化(2)激发activation center激活中心activation energy激活能activation fiber(1)激栝纤维(2)主动纤维activation of filament灯丝的激活activation of homing进入自动寻的制导状态,接通归航装置Activator活化计activator atom激活原子active(1)主动(2)有效的(3)有源的(4)激活的active area有效面积;有效显示区域active atom激活原子active autofocusing有效自聚集active caity激活腔active carbon活性碳active current有功电流Active Device有源器件active element有源组件active fibre激活〔光学〕纤维active figure control有效图像控制active imaging system主动成像系统active impurity活性杂质Active Infrared System活动红外线系统active infrared tracking system 主动式红外跟踪系统active interferometer有源干涉仪active ion激活离子Active Layer放射层active level激活能级active material激活材料,放射材料Active Medium活性介质active mode-locking主动锁模active network有源网络Active Optical Fiber激活光纤Active Optics主动光件active oxygen活性氧active power有功功率active pulse interferometer主动脉冲干涉仪Active Region放射区active resonator有源共振器active-device有源器件actively mode-locked Nd glass laser主动锁模钕玻离激光器Activity放射性活度,活性activity coefficient激活系数acton(An)锕射气actual image point实际像点actual temperature真实温度actuate作用,开动actuating motor伺服电动机actuating signal作用信号actuation(1)激励(2)起动,传动actuator(1)执行机构、执行组件(2)传运机构(3)激励器acuity锐度,敏度acuity for defocus散焦锐度Acuity, Visual视觉敏锐度Acutance锐度acute angle锐角Acute Bisectrix敏锐二等分角acute exposure短时间强照射acute irradiation急性辐射acuteness锐度adamantine spar刚玉adaptability适应性,适用性Adaptation视觉调整adapter(1)转接器(2)接合器(3)适配器adapter lens接合器透镜adapter sleeve紧定套,接头套〔筒〕,连接套管adaption自适应,配合,匹配adaption brightness自适应亮度adaption level自适应能级adaptive control自适应控制adaptive filter自适应滤光片adaptive laser resonator自适应激光共振器adaptive optical system自适应光学系统Adaptive Optics调适形光件Adaptometer视觉调整计Adaptometer (biophotometer)眼适应时间计adaxial向轴的,近轴的add加,附加addend(1)加数(2)附加物addendum(1)齿顶,齿顶高(2)附录addendum angle(1)齿顶角(伞齿轮的) addendum circle齿顶圆adder(1)加法器,相加器(2)加法电路adder-subtractor加减器addition(1)加,加法(2)附加,补充addition of diffraction patterns衍射图形迭加addition of modes模迭加addition of optical fields光学场迭加addition of wavefronts波阵面迭加,波前迭加additional mirror附加镜additional wave相加波,附加波additive添加物添加剂additive channel可加信道Additive Color Mixing光彩混合Additive Color Process增色处理additive colour加色additive complementary colors〔加色混色的〕补色additive filter附加滤光片additive mixture of colours加色混合additive noise相加噪声additive primaries加色混合的原色additive process加色法additivity相加性,迭加性Additivity of Luminance亮度迭加Address资料储位address hologram地址全息图address read wire地址读出线address write wire地址写入线Addressability安排数据储位的能力Addressability Measure可寻址量度addressable可寻址的addressable memory可寻址存储器Addressable Point可寻址点addressable register可寻址寄存器,可编址寄存器addressing寻址adele赋值矢量adherenceadhesion(1)附着,粘附(2)附着力,粘附力adhesive(1)附着的(2)粘附度adhesive power附着力Adhesives附着剂adiabatic绝热的adiabatic approximation绝热近似〔法〕adiabatic demagnetization 绝热热磁adiabatic ionizationenergy绝热电离能量Adiabatic Laser Colorimetry 绝对雷射色度学adiabatic polarization procedure绝热极化处理Adiabatic Process绝热过程adiabatics绝热曲线adiactinic绝射的,不透光的adiathermanous绝热的,不透红外线的adjacency邻接adjacency effect邻〔接〕效应adjacent agle邻角adjacent resonance相邻信道共振adjacent wave邻波adjoint伴〔随〕可调节的,可调整的,可校准的adjustable angle square活动角尺adjustable bearing可调轴承adjustable bench level可调台式水平仪adjustable cup mount可调杯形座adjustable guide bar可调导杆adjustable lever调节杆adjustable micrometer可调千分尺adjustable slit可调〔狭〕缝adjustable wrench活络板头adjuster(1)调节器(2)调准装置adjusting bracket调节架adjusting screw调节螺丝adjustment调准,配准adjustment range调整范围Adjustment, Interpupillary目眼中心距调整admeasure测量,测定admeasuring apparatus测像仪admission放入,接纳,进气admittance(1)光纳(2)导纳admittance matching(1)光纳匹配(2)导纳匹配admixture(1)掺质,混合(2)混合物ADP二氢磷酸氨adsorbability吸附能力adsorbed film吸附膜adsorbed layer吸附层adsorbent吸附剂adsorption吸附〔作用〕,表面吸收adsorption chromatography吸附色谱〔法〕adsorption effect吸附效应adsorption isotherm吸附等温线adsorption spectrometer 吸附分光计adulterated(1)掺杂的,掺假的(2)低劣的advance in path光程提前量advanced camera高级照相机Advanced Research Projects Agency远景研究计划局部(美国) advancer〔相位〕超前补偿器advancing front前沿advancing wave前进波advertiser信号装置,信号器Advisory Committee of the Radioactivity放射性咨询委员会AE camera自动曝光照相机aeolight〔充气冷阴极〕辉光管aeolotropic crystal各向异性晶体aeolotropism各向异性aeration充气,吹风aerial(1)空气的,气体的(2)空中的,航空的aerial array天线阵Aerial Camera航空照相机Aerial Film航空照相胶卷Aerial Mapping航空写像aerial object航空目标,空中物体Aerial Photogrammetry航空照相测量术aerial photographic survey航空照相测量Aerial Photography航空照相Aerial Photoreconnaissance航空照相勘察aerial radioactivity measurement航空放射性测量Aerial Reconnaissance航空勘察Aerial Survey航空测量aerial tuning天线调谐aeriscope超电摄像管,超光电移像管aero-camera航空照相机航空测量图,航空测图仪Aerocartography航测地图aerochronometer航空精密计时仪aerodynamic flow气动流aerodynamic heat transfer 气动热传递aerodynamic〔al〕气体动力〔学〕的,气动的aerograph(1)无线电报机(2)航空气像仪aerographic film航空摄影胶片aerohypsometer高空测高计aeromagnetic survey航空磁测量aeronautics航空学aeronomy高层大气物理学aerophotogrammetric mapping instrument航测制图仪器aerophotogrammetric survey 航空摄影测量aerophotogrammetry航摄测量术aerophotograph航空摄影aerophotographic camera航空摄影机aerophotography航〔空〕摄〔影〕学,航空照相术aerophysical survey航空物理测量aeroplane飞机航测制图仪aeroscope尘埃计,空中观测〔细菌灰尘收检〕器aerosimplex简单投影测图仪Aerosol气悬体,液悬胶体aerosol droplet悬浮微粒aerosol inhomogeneity 气悬体不均匀性aerosol measurement 气悬体测量aerosol particle analysis 气悬微粒分析aerosol scattering气悬散射aerosol single scattering 气悬体单散射aerosol size distribution 气悬体大小分布aerospace航空空间,宇宙空间aerospace industry航空空间工业,航天工业aerosphere〔生理〕大气层aerosurvey航空测量aerosurveying航〔空〕摄〔影〕测量术aerotar航摄镜头aerothermodynamics空气热力学aerothermoelasticity空气热弹性理论Aerotriangulation航空三角测量aerotron三极管aerovelox小型投影测图仪aeschynite易解石aether(1)以太(2)醚aether drift以太漂移AFC system自动频率控制系统affine collineation仿射共线affine transformation仿射变换affinity(1)类似(2)亲合势(3)仿射性affix(1)添加(2)添加物(3)附标Afocal无焦点竹afocal attachment lens附加望远镜头afocal doublet无焦双透镜afocal imaging system无焦成像系统afocal lens无焦透镜afocal zoom telescope连续变倍望远镜after-current余电流after-effect后效After-Image留像after-schock余震afterburner后然室,补燃器Afterglow余辉afterglow period余辉期afterimage余留成像Afterimage flasher影像后闪光器afterpulsing跟随脉冲aftertreatment后处理against moisture防潮against vibration防震against-the-rule astigmatism反常像散agar琼脂agate玛瑙age-hardening时效硬化ageing时效,老化、陈化ageing oven老化炉agent济Agfacolor阿克发彩色(商名) agglomerating烧结aggregate(1)组合〔的〕,集合〔的〕(2)机组aggregate polarization集合偏振,集偏振化agile missile灵巧导弹aging时效,老化,陈化aging of electroluminescence 电致发光老化aging rate老化率(1)搅拌,搅动(2)激发,激励(3)骚动agitator搅拌器aglow灼热〔的〕,发红〔的〕Ahrens polarizing prism阿伦斯偏振棱镜aid设备,仪器aiming瞄准Aiming Circle方位标定仪aiming device瞄准装置aiming point〔测量〕觇点,瞄准点aiming telescope瞄准望远镜air admittance valve进气阀air agitation空气扰动Air Bearing空气承轴air blast(1)气喷净法(2)喷气(3)喷气器air breathing laser (ABL)吸气式激光器,气动光器air bubble气泡air chuck气动卡盘air cleaner空气调节器air damping空气阻尼Air Dose辐射剂量air filter空过滤器air gapair gauge气动量规air knife coating气刀涂胶法air level〔气泡〕水平仪air light(1)〔空气中〕散射光(2)航空信号埃air micrometer气动测微计air photogrammetricsurvey航〔空〕摄〔影〕测量air pollution measurement with lidar 激光〔雷达〕测大气污染air pollution monitoring空气污染临测air pressure gauge气压计air purge空气纯化air reconnaissance camera航空侦察照相机air seal气封air support bag空气承囊(气胎)air transportable sonar机械声纳air vent通风管,通风孔,排气口air 〔borne〕surveying航空测量,航测air-bag support system空气囊支撑系统air-conditioning system空〔气〕调〔节〕装置air-cored空心的,无铁心的air-defence sightingtelescope防空观测望远镜air-filled thermocouple充气温差电偶air-glass reflection空-玻璃界面反射air-glass surface空气-玻璃界面air-in送气,充气air-locked不透气的,气密的air-map航空图,空中摄影地图air-operated controller气动控制气air-out出气,排气air-pad bag空气垫囊air-proof不透气的,密封的air-pump气泵air-scattered空气散射air-spaced double anastigmat (Celor)双分离对称消像散镜头(赛罗镜头)Air-Spaced Doublet中空双合透镜air-survey camera航测照相机air-to-air identification空对空识别air-to-air intercept空对空拦截air-to-air laser ranging空对空激光测距air-to-ground laser rangefinder空对地激光测距离air-to-ground laser ranging 空对地激光测距Air-to-Ground Phototransmission空对地照片传递系统airborne机载的,航空的airborne electromagnetic survey 航空电磁勘探airborne gaseous laser机载气体激光器airborne gravity survey航空重力测量airborne ir imaging机载红外成像airborne irtransmissometer机载红外透射仪airborne laser radar机载激光雷达airborne laser rangefinder机载激光测距仪airborne laser ranger机载激光测距仪airborne laser tracker(ALT)机载激光跟踪器airborne oceanographic lidar system机载海洋激光雷达系统airborne radioactivitysurvey航空放射性测量airborne remote sensing system机载遥感系统airborne television system机载电影系统airbrake空气制动器,减速板airbrush气笔,喷枪aircraft landing lamp飞机着落信标灯Airglow夜光,气辉airglow emissionairglow intensity大气辉光强度airing(1)通气(2)充气(3)起泡沫airload气动负载airphoto(1)航空摄影(2)航摄相片airscoop进气口,进气道airspace(1)空城(2)空隙airtightness气密〔封〕性airway(1)航路(2)通气孔airy(1)空气的(2)通风的Airy Differential Equation 爱礼微分方程式Airy diffraction disc爱里衍射斑Airy diffraction integral 爱里衍射积分Airy diffraction pattern爱里衍射图样Airy disc爱里〔衍射〕Airy Disk爱礼圆盘图Airy disk radius爱里斑半径Airy point爱里〔支援〕点Airy system爱里系统Airy type objective爱里型物镜aisle通道,走廊Al-clad用铝作覆盖层的alabamine (At)艾alarm(1)警报(2)警报器alarm lamp信号灯Albada finder阿尔巴达寻像器,阿尔巴达瞄准器Albedo反照率albedo radiation(1)反照率辐射(2)辐射反射率albedometer反照率计alcohol酒精,乙醇aldehyde乙醛alexanderson altimeter反射高度计,回波测高计Alexandrite翠绿宝石algebra of matrices〔矩〕阵代数algebraic complement代数余子式algebraic expression代数〔表达〕式Algerithm演算algorithm算法algorithmic language算法语言aliaing version重迭变形alias-type transformation图像固定坐标移动之变换Aliasing假像aliasing error(1)混淆误差(2)重迭误差alibi-type transformation坐标固定图像移动之变换旋标装置,准照仪alidade protractor照准仪量角器alienation coefficient不相关系数,相疏系数align(1)列成一行(2)瞄准目标(3)对准,校直(4)定位,定中心Aligned-Cup Method钟罩互夹定心法aligner准直器,校准器Aligning较轴作业Aligning Chuck镜片对心座Aligning Components of PrismAssemblies棱镜定位法aligning interferometer校直干涉仪alignment(1)校直(2)对准(3)排列alignment axicon校直轴锥镜alignment bracket校直轴支架Alignment Bundle校准纤维束alignment by sight目测准直法alignment chart列线图alignment diagram列线图,算图alignment dock校直坞alignment error校直误差,调准误差Alignment Laser校直雷射,校准用雷射alignment of crystal晶体排列alignment spherealignment target对准目标Alignment Telescope校直望远镜,校准用望远镜alignment-telescope bracket校直望远镜托架alive(1)活的(2)通电流的,加电压的alive circuit带电线路alkali〔强〕咸alkali earth metal咸土金属alkali halide卤化咸alkali metal咸金属alkali-antimonides咸金属锑化物alkali-containing glass含咸玻璃alkali-dimer咸二聚物alkali-halide crystal卤化咸晶体alkali-rich glass (crown)纯咸玻璃(冕牌玻璃) alkaline(1)咸性(2)咸的alkaline earth fluoride咸土氟化物alkaline earth metal咸土金属alkaline high energy battery咸性高能电池组alkaline metal咸金属alkaline treatment咸产处理(1)咸性(2)咸度alkyl iodide烷基碘All Optical Communication全光通信all-dielectric multilayers多层全介电膜all-metal全金属all-pass filter全通滤波器all-purpose computer通用计算器all-purpose instrument通用仪器all-purpose telescope通用望远镜all-supersonic纯超声速的all-transistor camera全晶体管照相机all-weather(1)全天候的(2)耐风雨的allegiance(1)结合,耦合(2)通信,联系(3)键allied Fourier integral同源传里叶积分alligation合法,混合法allochroic变色的,非本色的allochromatic义质色的allochromatic colour义质色allochromatic crystal(1)义质光导性晶体(2)义质色晶体allochromaticphotoconductor义质色光电导体allochromatism掺质色性Allochrometic杂质色的Allogyric Birefringence 异旋双折射allomorph同质异晶allomorphism同质异晶体allotment配置,分配、分配额allotriomorphic crystal 不整形晶体allotrope同素异形性allotropic transformation 同素异形变化allotropism同素异形性allotropy同素异形allotter分配器allowable deviation容许偏差,许用偏差allowable error容许误差allowable exposure容许照射,容许曝光allowable stress容许胁强,容许应力allowable transition容许跃迁allowance(1)容限,公差(2)加工余量allowed band容许带,公差带allowed spectrum容许谱allowed spectrum shape 容许能谱形状alloy合金alloy steel合金钢,特殊钢alloy-junction合金结Alloy-Junction Photocell具合金接头之光电池alloy-junction transistor合金结晶体管allyl diglycol carbonate烯丙基双甘油碳酸盐alnico铝镍钴aloxite (Al2O3)(1)熔融氧化铝(人造刚玉磨料)(2)铝砂alpax铝硅合金alpha meterα射线〔强度〕测量计alpha rayα射线alpha-crystalα晶体alpha-ray spectrographα射线摄谱仪alpha-ray spectrometerα射线光谱仪alpha-ray spectrumα射线谱alphabet laser多掺激光器alphanumeric字母体字的Alphanumeric Reader文数字阅读机alphatronα电离真空计,α粒子电离压力计alsimag铝硅镁合金(一种高频绝缘材料)alt-alt telescope mounting卧轴–卧轴型望远镜安装结构alt-azimuth(1)地平经纬仪(2)地平〔式〕装置alt-azimuth telescopemounting卧轴–竖轴型望远镜安装结构Altazimuth望远镜头调整器alternate matrix交错〔矩〕阵alternate partial polarizerfilter交变部分偏振滤光器alternate-line scanning隔行扫瞄alternately dark and bright rings 明暗相间的环alternating current (a.c.)交流电alternating currentamplifier交流放大器alternating current generator交流发电机alternating currentmachine交流机alternating current motor交流发电机alternating current transformer 交流变压器alternating current tube交流〔电子〕管alternating displacement交变位移alternating electromotive force 交变电动势alternating light method两光交换法alternating motion往复运动alternating quantity(1)变量,交变量(2)交错量alternating voltage交流电压alternating-gradientfocusing principle交变陡度聚焦原理alternating-gradient lens交变陡度透镜alternating-gradient magnetic focusing交变陡度磁聚焦alternation交替,变换,交流alternator交流发电机altimeter高度计,测高仪altitude(1)地平纬度(2)高度,海拔altitude circle(1)竖直度盘(2)地平经圈altitude gauge测高计Altman modification阿特曼改进型〔目录〕altrashort pulse超短脉冲alum明矾alum glass明矾晶alumel镍铝锰合金(高温热电偶材料) alumina铝土,矾土alumina borosilicate glass硼硅酸铝玻璃aluminium (AL)铝aluminium alloy铝合金aluminium antimonide锑化铝aluminium arsenide砷化铝aluminium backing铝垫片,铝底座aluminium coating铝膜aluminium foil lamp铝箔灯aluminium mirror coating铝反射膜aluminium oxide氧化铝(Al2O3)aluminium oxide crucible氧化铝坩埚aluminium paint铝涂料,铝涂层,铝〔银灰〕漆aluminium-coated Pyrex镀铝荧光屏aluminium-oxygen group铝氧族Aluminized Cathode-RayTube镀铝阴极射线管aluminized mirror镀铝镜Aluminizing铝化alundum三氧化二铝(Al2O3),刚铝砂(磨料),铝氧粉Alzac method电解光辉法(制造铝反射镜的)Alzac reflector铝制金属反射镜Alzak aluminium铝制金属友射镜AM Dector调富检波Am-cw laser ranging连续波调幅激光测距Am-Pm conversion调幅–调相变换Am-Pm discriminator调幅–调相鉴频器amagat阿马伽(0℃,1大气压下的气体的密度单位。

电热耦合

电热耦合

J Comput Electron(2012)11:93–105DOI10.1007/s10825-012-0387-xCoupled electro-thermal simulation of MOSFETs Chunjian Ni·Zlatan Aksamija·Jayathi Y.Murthy·Umberto RavaioliPublished online:31January2012©Springer Science+Business Media LLC2012Abstract Thermal transport in metal-oxide-semiconductor field effect transistors(MOSFETs)due to electron-phonon scattering is simulated using phonon generation rates ob-tained from an electron Monte Carlo deviceThe device simulation accounts for a full band descrip-tion of both electrons and phonons considering22types of electron-phonon scattering events.Detailed profiles of phonon emission/absorption rates in the physical and mo-mentum spaces are generated and are used in a MOS-FET thermal transport simulation with a recently-developed anisotropic relaxation time model based on the Boltzmann transport equation(BTE).Comparisons with a Fourier con-duction model reveal that the anisotropic heat conduction model predicts higher maximum temperatures because it ac-counts for the bottlenecks in phonon scattering pathways. Heatfluxes leaving the boundaries associated with differ-ent phonon polarizations and frequencies are also exam-ined to reveal the main modes responsible for transport.It is found that though the majority of the heat generation is in the optical modes,the heat generated in the acoustic modes C.Ni( )·J.Y.MurthySchool of Mechanical Engineering,Purdue University,West Lafayette,IN47907,USAe-mail:charlesni2006@J.Y.Murthye-mail:jmurthy@Z.AksamijaElectrical and Computer Engineering Department,University of Wisconsin-Madison,Madison,WI53706,USAe-mail:aksamija@U.RavaioliSchool of Electrical and Computer Engineering,University of Illinois,Urbana Champaign,IL61820,USAe-mail:ravaioli@ is not negligible.The modes primarily responsible for the transport of heat are found to be medium-to-high frequency acoustic phonon modes.Keywords Semiconductors·Dielectrics·Phonons·Boltzmann transport equation·Electron Monte Carlo device simulation·Coupled electro-thermal simulation·Micro/nanoscale heat transfer1IntroductionCoupled electro-thermal simulation of sub-micron electron device is of great interest to both academia and industry,due to the fact that self-heating may cause device performance degradation in submicron regime.Sadi et al.[1,2],used a 2-D electron Monte Carlo simulation(MC)coupled with a 2-D solution of the heat diffusion equation(HDE)to study the electrothermal phenomena in Silicon-On-Insulator(SOI) and Silicon-Germanium-on-Insulator(SGOI)metal-oxide field-effect transistors(MOSFET).Although they got in-teresting results on device thermal effects and performance degradation,there is a fundamentalflaw in their thermal so-lution of the heat diffusion equation,which is well known not valid in submicron regime[3].Raleva,Vasileska et al.[4,5],coupled electron Monte Carlo simulation with the equations for the optical and acoustic energy transfer derived from the phonon Boltzmann Transport Equation(BTE)[6].They used this methodology to study electrothermal effects in the Silicon-On-Insulator (SOI)MOSFET.They showed that the device current de-grades due to heating effects,while pronounced velocity overshoot in the nano-scale device structure(at gate length in the order of20nm)minimizes the current degradation due to lattice heating.Although they solved the equationsFig.1Phonon dispersion for bulk silicon in the X[100]direction. Phonons of the f and g type are marked on the graph[7]for the optical and acoustic energy transfer derived from phonon BTE,their thermal transfer model is a simplified model which might not be able to capture detailed physics of phonon transport in the submicron devices.To better model thermal transport in submicron devices, it is necessary to correctly resolve the granularity of phonon transport.Figure1shows phonon dispersion curves for sili-con in the[100]direction.Electron-phonon scattering scat-ters energy selectively to high-frequency optical and longi-tudinal phonon modes at the Brillouin zone edge[8–10], which then transfer energy through phonon-phonon scatter-ing processes to other phonon groups.The thermal profile in the MOSFET is thus governed by which phonon groups receive energy from electrons,how fast they scatter to other phonons,and the group velocity of these phonons.If scatter-ing from slow-moving high-frequency optical and acoustic phonons to faster-moving phonon groups is a bottle-neck, high device temperatures would occur;alternatively,if fast-moving phonons are able to move energy quickly to the de-vice boundaries,low device temperatures would result.Cap-turing these detailed physics requires a resolution not only of the electron-phonon scattering rates in both the physical and momentum spaces,but also of phonon scattering and transport mechanisms.A number of published studies have sought to simulate phonon transport at the sub-micron scale. Early studies employed a“gray”description of phonons and employed the Boltzmann transport equation(BTE)in the re-laxation time approximation[3,11].Here,all phonons are grouped into a single mode characterized by a single group velocity and relaxation time.One of the parameters,typi-cally the group velocity,is chosen to reflect that of the dom-inant phonon group responsible for transport at the device temperature,such as longitudinal acoustic(LA)phonons;the relaxation time is then computed from the bulk ther-mal conductivity.However,this type of model does not ad-equately capture the large variations in group velocity,spe-cific heat and scattering rates in MOSFET simulations.Sverdrup[12]and Ju[13]developed and improved a two-fluid or semi-gray BTE model for heat conduction in silicon-on-insulator(SOI)devices.In the two-fluid BTE model,there are two phonon modes:the reservoir mode and the propagation mode.The longitudinal acoustic phonons are lumped into the propagation mode,while the transverse acoustic and optical phonons are lumped into the reservoir mode.Heat generation due to electron-phonon interaction in MOSFET is incorporated into the reservoir mode via a source term,while the heat transport is accomplished by the propagation mode,characterized by a single group velocity. The two modes are coupled by a scattering term character-ized by a single relaxation time,again chosen to match bulk thermal conductivity.The device temperature predicted by this type of model depends strongly on the choice of the group velocity and relaxation time.If the group velocity is picked to be that of a dominant LA group,a too-long relax-ation time between reservoir and propagating modes results, leading to an unrealistically high device temperature.Because of the drawbacks of these approximate models, a number of recent efforts have sought to capture the de-tails of phonon transport,incorporating the details of phonon dispersion,polarization and scattering to different degrees. Narumanchi et al.[14,15]developed a BTE model incorpo-rating phonon dispersion effects to model MOSFET thermal transport.The phonon spectrum was resolved into bands, but only acoustic modes incorporated a ballistic term.The ballistic term was ignored for optical phonons because of their low group velocity,and a single equation for the opti-cal phonon energy was developed.The interactions among the different phonon groups were represented by frequency-dependent relaxation times,which were obtained from the perturbation theory[16].With most of the heat generation assigned to the optical phonon mode,their prediction of the hotspot temperature rise above ambient could be as high as 350%of that predicted by the Fourier diffusion model.This high number was thought to be a result of the zero group velocity assigned to the optical mode.Phonon BTE models incorporating detailed spectral reso-lution require the determination of detailed relaxation times, which can no longer be found simply by matching bulk ther-mal conductivity.Wang[17]developed a new BTE model which directly computes the scattering rate for three-phonon interactions from perturbation theory[16]without making the relaxation time approximation.All modes,including op-tical,are resolved using the BTE with ballistic terms in-cluded.Wang developed a search scheme to determine all three-phonon processes(normal(N)and Umklapp(U))con-tributing to scattering.Field effect transistor(FET)thermalmodeling using this BTE model showed that the optical phonon mode plays an important role in the prediction of the hotspot temperature,since optical phonon velocities are not negligible for intermediate wave-number values.One of the drawbacks of directly computing N and U in-teractions and enforcing conservation rules is that the com-putation of scattering rates becomes very expensive.There are many millions of N and U interactions,which must be evaluated every iteration in a typical computational process. Ni[18]developed an anisotropic relaxation time phonon BTE model based on Ref.[17].This BTE model employs a single-mode relaxation time idea,but the relaxation time is a function of the wave-vector.The model incorporates directional and dispersion behavior and the resulting three-phonon processes satisfy conservation putational expense is allayed by pre-computing single-mode relaxation times,resulting in order-of-magnitude reduction in compu-tational time over Ref.[17].A critical issue in the model development is the accounting for the role of three-phonon N scattering processes.Following Callaway[19],the over-all relaxation rate is modified to include the shift in the phonon distribution function due to N processes.The relax-ation times so obtained compare reasonably well with those extracted from equilibrium molecular dynamics simulation by Henry and Chen[20].In all the models described above,metal-oxide-semi-conductorfield effect transistor(MOSFET)modeling was undertaken by prescribing an electron-phonon scattering source in the phonon BTE.Typically,a source term is in-cluded in the optical phonon equations,or a prescribed arbi-trary distribution in wave-vector space is used.However,to fully capture the granularity of thermal transport,it is nec-essary to describe phonon generation as a function of both phonon mode and frequency.Monte Carlo simulation has long been used to model electron transport in semiconduc-tor devices[21].Pop et al.[8–10]developed a Monte Carlo simulation(e-MC)scheme to calculate Joule heating in sili-con.In their scheme,they used analytic,non-parabolic elec-tron energy bands to model electron transport,while using an isotropic,analytic phonon dispersion model for electron-phonon scattering,distinguishing optical/acoustic and lon-gitudinal/transverse phonon branches.Their Monte Carlo simulation was used to examine the details of the phonon generation spectrum by electron-phonon interaction in sili-con.They found that a significant portion of the generated phonons were optical phonons or acoustic phonons near the Brillouin zone edge.Their simulations did not focus on the details on phonon transport,however.Sinha et al.[22]developed a split-flux form of the non-equilibrium phonon BTE model in which the phonon generation spectrum was taken from Monte Carlo simula-tion of electron-phonon scattering.They split the phonon departure-from-equilibrium function into two components:one that traces the evolution of the emitted phonons before they thermalize through scattering,and another that traces the diffusion of the thermalized phonons.The former was obtained by solving the ballistic BTE in a spatial region of the order of a mean free path.The thermalized component was assumed to correspond to the solution of the BTE in the limit of diffusive transport.Rowlette and Goodson[23]coupled the electron Monte Carlo(e-MC)model of Refs.[8–10]with the split-flux model for phonon transport to perform a self-consistent sim-ulation of non-equilibrium transport in MOSFETs.Their coupled simulation begins with an isothermal e-MC simu-lation solved self-consistently with the Poisson equation in the device.The net phonon-generation rates as a function of position and phonon frequency are gathered and fed into the split-flux phonon transport model,whose solution leads to an updated distribution of phonons as a function of position. The effective temperatures for the dominant optical f-and g-type phonons as well as for the LA and TA branches are then computed and passed back to the e-MC to adjust the electron-phonon scattering rates.They used this fully cou-pled electron-phonon model to study a1-D n+/n/n+sili-con device and found that near the hotspot the temperature is anomalously high,possibly as a result of ballistic trans-port.The e-MC solver developed by Pop et al.[8–10]as-sumes analytical,non-parabolic electron energy bands and analytic phonon dispersion curves.Recently,Aksamija[7] improved an existing full-band Monte Carlo simulation tool developed at University of Illinois at Urbana-Champaign [24]to provide phonon generation terms due to electron-phonon scattering.He employed a full-band description of electrons and phonons.The electron band structure was cal-culated using the empirical pseudo-potential model of Co-hen and Bergstresser[25].The electron scattering mecha-nisms considered in Monte Carlo simulation included intra-valley acoustic phonon scattering,X–X f and g type inter-valley phonon scattering,and X–L inter-valley phonon scat-tering.The Monte Carlo simulation was performed self-consistently with a solution of the Poisson equation to up-date the electricfield during the simulation.The e-MC sim-ulation may be used to provide phonon generation rates to a phonon BTE simulation to accurately predict sub-micron thermal transport in MOSFETs.The goal of this paper is to couple the anisotropic re-laxation time phonon BTE simulation to a computation of the phonon generation spectrum calculated using the Monte Carlo simulator of Ref.[7].The Monte Carlo simulation[7] provides the phonon generation spectrum at different spa-tial positions and different positions in momentum space. The phonon generation spectrum so obtained is incorpo-rated in the anisotropic relaxation time phonon BTE model of Ref.[18]to predict more realistically the location andtemperature of a hotspot in the MOSFET device.The ap-proach taken in this paper not only improves the representa-tion of the electron-phonon scattering source to the phonon field,but also resolves the details of phonon transport more completely than in previous studies.However,only one-way coupling is considered in that the predicted temperature field does not affect electron-phonon scattering.Thus the electron mobility is not affected by the device self-heating and the drain current reduction due to self-heating is not captured.The device Monte Carlo simulation was done at fixed tem-perature of 300K.The model is applied to the prediction of the temperature field in a MOSFET and the detailed path-ways for energy transport are identified and discussed.2Phonon dispersion for siliconBulk silicon has six phonon dispersion branches:two trans-verse acoustic phonon branches (TA1and TA2),one longi-tudinal acoustic phonon branch (LA),two transverse opti-cal branches (TO1and TO2)and one longitudinal optical branch (LO).The dispersion curves for silicon used in this paper are calculated using the adiabatic bond charge model [26].A fully anisotropic Brillouin zone is taken into ac-count.3Anisotropic relaxation time modelA complete description of the anisotropic relaxation time model may be found in Ref.[18];a brief summary is given below.The phonon BTE in the energy form [18]under the single mode relaxation time assumption may be written as:∂e (r ,K ,t)∂t +∇·(e (r ,K ,t)v g )=(e 0−e(r ,K ,t))1τ3phonon +1τI +1τB+q vol (r ,K )(1a)with e (r ,K ,t)=lim3K →01(2π)1K3KωN(r ,K ,t)d 3K(1b)ande 0=lim3K →01(2π)313K3Kωexp ( ω/k B T lattice )−1d 3K(1c)Here q vol (r,K)is the volumetric heat generation term due to electron-phonon scattering.N(r ,K ,t)is the phonon oc-cupation number,and e (r ,K ,t)is the phonon energy den-sity for phonons of wave vector K at position r and time t .It denotes the phonon energy per unit physical volume per unit K-space volume at (r ,K ,t).e 0(ω)is the phonon en-ergy density corresponding to the Bose-Einstein distribution function evaluated at the lattice temperature T lattice .v g (K )is the phonon group velocity corresponding to the wave vec-tor K .It may be calculated from the phonon dispersion by v g =∇K ω(2)The adiabatic bond charge model [26]is used to com-pute the dispersion relation,as described in Ref.[18].The effective relaxation time τ(K )depends on the wave vector;a dependence on polarization is implied throughout.It con-tains the influence of three-phonon scattering,represented by a relaxation time τ3phonon and isotope scattering,repre-sented by τI ;Matthiesen’s rule [17]is applied to compute their combined influence.Boundary conditions on (1a )include the specification of thermalizing boundaries,specular boundaries or partially specular/partially diffuse boundaries.Boundary scattering is computed by representing the appropriate boundaries of the MOSFET domain as either partially or fully diffusely re-flecting.A detailed description of the treatment of boundary conditions may be found in Ref.[18].4Numerical methodEquation (1a )is discretized using the finite volume method and solved numerically.The phonon energy distribution function e (r ,K ,t)is discretized in both the spatial and wave vector domains.The spatial domain is discretized into control volumes or cells.The three-dimensional wave vec-tor space is discretized using spherical coordinates and con-sists of an angular space of 4πand a wave number space [0,K zone ],where K zone is the maximum K value in each di-rection,accounting for the shape of first Brillouin zone [18].The angular space is discretized into N θ×N φcontrol an-gles,each of extent of i ,corresponding to direction i ;θand φare the polar and azimuthal angles.The wave num-ber space is discretized into N k bands,each of extent K j ,corresponding to band j .Each polarization is discretized inthis way.The discrete energy density e ijcorresponding to direction i and band j is stored at the cell centroids.The phonon BTE is integrated over the control volume,control angle and wave number band for each polarization,resulting in an energy balance for each spatial control vol-ume for direction i ,wave number band j and polarization.A third-order SMART scheme [27]is used to discretize the convective operators.A second-order discretization of the scattering terms is used.The phonon energy densities are solved sequentially and iteratively,cycling through each di-rection and band in turn.For each direction and band,the discrete equation set is solved using the line-by-line tri-diagonal matrix algorithm (TDMA).5Lattice temperatureOnce the discrete energy density at the cell centroids is computed,the lattice temperature is determined.In order to guarantee energy conservation,the summation of the source terms on the right hand side of (1a )over all directions and bands should be zero,if q vol (r ,K )=0.The following equa-tion must be satisfied:(e 0−e (r ,K ,t)) 1τ3phonon +1τI +1τB d 3K =0(3)The lattice temperature,T lattice ,is defined so that (3)is sat-isfied,using the definition of e 0given in (1c ).6Phonon relaxation timesA key feature of the anisotropic relaxation time model is thedevelopment of single-mode relaxation rates based on a rig-orous computation of three-phonon interactions.Klemens et al.[16]developed three-phonon interaction rates based on perturbation theory.Based on these rates,Wang [17]de-veloped a full-scattering phonon BTE model which directly computes three-phonon scattering rates for N and U pro-cesses.Details may be found in Ref.[18];a brief overview is given here for completeness.Three-phonon interactions must satisfy energy and mo-mentum conservation rules,given by [16]ω+ω ↔ω (4)K +K ↔KN processesK +K ↔K +bU Processes(5)Here,ω,ω ,ω are three interacting phonons with corre-sponding wave vectors K ,K ,K ,and b is the recipro-cal lattice vector.Wang [17]developed a search techniqueto identify all possible three-phonon normal (N)and Umk-lapp (U)processes between interacting phonons.The pro-cess employs a discretization of the Brillouin zone in the manner described in this paper,and triads of interacting phonons (ij),(kl)and (mn)satisfying (4)and (5)are found.Here (i,j)denotes the direction i and wave number band j of an interacting phonon;(kl)and (mn)are interpreted in a similar fashion.Consideration of polarization in determin-ing these triads is implied.Given a such a triad,the scattering rate may be cal-culated from the perturbation theory derived by Klemens and co-workers [16,28].For an interaction of the type K +K ⇔K ,the scattering rate due to three-phonon pro-cesses is given by: dN dt 3-phonon = K2|C 3|2M ωω ωπδt (ω+ω −ω )×(NN (N +1)−(N +1)(N +1)N )(6)Here |C 3|2=(4γ23G )(M 22)(ωω ω )2,γis the Gruneisen con-stant,G is the number of atoms per unit cell,v is thesound velocity,and M is the atomic mass.N is the oc-cupation number of mode K ,while N and N are those corresponding to K and K .The summation is over all possible interactions undergone by a phonon of wave vec-tor K .The anisotropic relaxation time model employs a single-mode relaxation time approximation which signif-icantly cuts down on solution time while preserving the granularity of phonon-phonon interaction bottlenecks.Un-der this approximation,the three-phonon relaxation time τ3phonon in (1a )is computed by assuming that the only non-zero departure from equilibrium occur for the phonon mode K ,i.e.,the phonon mode for which the BTE is be-ing solved;the departure from equilibrium of phonons with wave vectors K and K are set to zero.Under this approx-imation,it is possible to show that for a single three-phonon interaction for phonon K ,the single mode relaxation time may be written as1τ3phonon (K )=2|C 3|2M ωω ωπδt (ω+ω −ω )(N 0−N0)(7)Details may be found in Ref.[18].The computational savings afforded by the anisotropic relaxation time model now become evident.To evaluate the scattering rate in (6),the non-equilibrium distribution func-tions N,N and N are necessary.These change iteration-to-iteration in a typical computational procedure.Since there may be many millions of N and U interactions,the scattering term update becomes computationally very ex-pensive even for coarse spatial meshes.On the other hand,τ3phonon in (7)depends only on the equilibrium distributions of the interacting phonons,and may be computed a priori and stored,greatly reducing the cost per iteration.In the present implementation,a list of all permitted three-phonon N and U processes is first determined using the procedure described in Wang [17].Based on these per-mitted interactions,a single-mode relaxation time as a func-tion of discrete wave vector,polarization and temperature is computed and stored in a look-up table.Interpolations within this look-up table are used to compute the distribu-tions of relaxation time in physical and wave-number space in the MOSFET simulation.Incorporation of N processes is performed through the use of a shifted equilibrium distribu-tion,as described by Callaway [19].Details of the relaxation time computations as well as validation against experimen-tal measurements may be found in Ni [18].7Monte Carlo simulation including full phonon dispersionJoule heating or phonon generation in the device due to electron-phonon interaction may be obtained from Monte Carlo simulation.A three-dimensional ensemble Monte Carlo simulator with a self-consistent non-linear Poisson solver[29]is employed here;a quantum correction based on thefirst moment of the Wigner equation is used[7].The Monte Carlo simulator accounts for a full band structure for electrons which was implemented in[30].The6X valleys of the lowest electron conduction band at(±0.85×2π/a,0,0),(0,±0.85×2π/a,0),and (0,0,±0.85×2π/a)in the wave vector space(a is the lat-tice constant of bulk silicon[7]),and the next higher L val-leys in the conduction band,are considered.The transitions may be categorized into the following types:intra-valley transitions(within one X valley),inter-valley X–X f type transitions(between a valley and any of the four valleys closest to it),inter-valley X–X g type transitions(between a valley and its opposite valley),and inter-valley X–L transi-tions.Figure1shows the f and g type transitions graphically.A g-type transition,for example,involving electrons go-ing from(0.85×2π/a,0,0)to(−0.85×2π/a,0,0)would cause a phonon at(1.7×2π/a,0,0)to be generated.In the irreducible wedge of thefirst Brillouin zone,the correspond-ing K value would be(0.3×2π/a,0,0)[7].All the other g type transitions may be obtained exploiting the symmetry of the lattice.The energies of the phonons involved in each transition may be tabulated and used to simplify the scattering rate calculation in the Monte Carlo simulation.As mentioned above,four types of transitions,i.e.,intra-valley,X–X f type, X–X g type,and X–L inter-valley transitions,are consid-ered.For each type of transition,there are several phonon branches on which phonons may be emitted or absorbed.A total of22different kinds of scattering events resulting from these interactions are shown in Table1.The transition rates or probabilities are tabulated for these22scattering events in the Monte Carlo simulator.The scattering prob-abilities are also tabulated in the Monte Carlo simulator by the energy of the electron involved in the events listed in Ta-ble1.They are calculated by analytically integrating Fermi’s Golden Rule over all initial electron momenta k with a given energy and all the possiblefinal momenta k [7].Whenever a collision,resulting in either emission or ab-sorption,occurs,an average phonon energy corresponding to the chosen event type is either subtracted(for emission)or added(for absorption)to the current electron energy.These energies are listed in Table1.Thefinal energy of the elec-tron is then used to look up thefinal state of the electron after collision in a table of electron momenta sorted by energy in the irreducible wedge of thefirst Brillouin zone.Then the Table1Classification of scattering events[7]Event Valley Sign Branch EnergyE avg(meV)1Acoustic Absorption TA/LA0to45meV 2Intra-valley Emission TA/LA0to45meV 3Absorption TA18.95824LA/LO47.39545X–X f TO59.02886TA12.06437LA18.52738X–X g TO/LO62.04499X–X f Emission TA18.958210LA/LO47.395411TO59.028812X–X g TA12.064313LA18.527314LO/TO62.044915X–L Absorption TO57.908516LO54.634017LA41.363218TA16.976219X–L Emission TO57.908520LO54.634021LA41.363222TA16.9762 actualfinal state in the complete3-D momentum space is chosen randomly by symmetry considerations,according to the specific type of scattering that occurred[31].For exam-ple,for X–X f type scattering,the largest component of the momentum in thefinal state must be made perpendicular to the largest component of the momentum in the initial state, while other types of scattering may have their signs and or-dering chosen at random[7].A full phonon dispersion relation,calculated from the adiabatic bond charge model[26]and tabulated for look-up, is included to ensure accuracy.An iterative algorithm intro-duced by Pop et al.[8]is adapted to ensure that all scatter-ing events conserve energy and momentum with the use of the full phonon dispersion relationship.As shown in Fig.2, this algorithm starts at each scattering event with an estimate of the phonon energy,E est,involved.This estimated energy is taken from those listed in Table1(E est=E avg).From the resulting electron energy E(k )=E(k)±E avg,thefinalstate k is looked up,and the phonon momentum K is de-termined by K=k±k .Its corresponding phonon energy E(K)is determined from the full phonon dispersion rela-tion and used as the next guess of the electronfinal energy E(k )=E(k)±E(K).Thefinal state k is again looked up and the procedure described above repeated until afi-nal state satisfying both momentum and energy conserva-。

罗兰(Roland)FR-8x V-Accordion商品介绍说明书

罗兰(Roland)FR-8x V-Accordion商品介绍说明书

The Ultimate Fusion of Technology and TraditionWith the incredible new FR-8x, Roland has perfected the synergy between traditional accordion playability and modern digital power. The latest flagship piano-type V-Accordion is jam-packed with features and enhancements developed with input from the world’s top players, bringing a previously unattained level of expression and versatility to every accordionist. Innovative Dynamic Bellows Behavior technology delivers the true bellows response of an acoustic accordion, while the expanded sound set, four powerful multi-effects, anonboard looper, and much more offer atreasure chest of tools for dynamic musical exploration. Seamlessly fusing top-level technology with familiar acoustic tradition, the FR-8x V-Accordion ushers in a new era of creative freedom for players everywhere.Flagship piano-type V-Accordion, filled with many enhancements requested by pro accordionistsNewly developed Dynamic Bellows Behavior technology emulates the true bellows response of an acoustic accordion in every registerSimple and convenient onboard battery charging with an AC adapterA large selection of accordion sounds from around the world, plus 180 orchestra and percussion sounds and world-class Virtual Tone Wheel organsFour powerful multi-effects engines (MFX), with dedicated MFX for Accordion, Orchestra 1, Orchestra 2, and Orchestra Chord sections.All-new user interface, featuring a large, easy-to-read color display, intuitive panel layout, and three programmable chin switches for hands-free control of a variety of functions1400 user program memories allow players to save custom setups for every performing situation Onboard looper for creating instant backing accompanimentRecording and audio playback via convenient USB memory; USB host port for connecting to computers Available in red and black finishes■■■■■■■■■■mp3True Acoustic Response with Dynamic Bellows BehaviorRedesigned Interface with Color Display and Intuitive Panel LayoutAll-in-One Operation and Onboard Battery ChargingNewly developed for the FR-8x, Dynamic Bellows Behavior technology represents a real breakthrough for digitalaccordionists. In an acoustic accordion, sounds are produced by reeds that vibrate with airflow generated by the movement of the bellows; the resistance of the bellows constantly varies, depending on how many reeds are selected and how many notes are played at once. In the FR-8x, Dynamic BellowsBehavior automatically adjusts the air transfer in the bellows in real time based on the selected register and the number of notes played, accurately replicating the familiar andcomfortable bellows feel of an acoustic accordion. Dynamic Bellows Behavior can be easily disabled for players that prefer the bellows feel of previous V-Accordions.The FR-8x features a completely redesigned user interface that’s more powerful and easier to use than ever before. A large, recessed color display makes it simple to see and edit various parameters, while the revamped panel layout provides fast, intuitive operation via many dedicated buttons and knobs. Three all-new programmable chin switches let you control a variety of functions such as changing registers, selecting user programs, and more, all without lifting your hands off the keyboards. Additionally, 1400 user program memories provide ample storage for custom settings, with quick fingertip recall in every performing situation.The FR-8x is a totally self-contained instrument, complete with a rechargeable onboard battery and built-in stereoamplification system. Battery charging is accomplished simply by connecting the included AC adapter directly to the FR-8x, and you can play without interruption during the charging process. In addition, all device connections are now located right on the instrument, including MIDI, USB, and audio jacks for connecting to an external amplification or recordingsystem.Expanded Collection of World-Class SoundsZones, Layers, and DrumsPowerful Multi-Effects and Onboard LooperIn addition to a full selection of authentic accordion sounds from around the world, the FR-8x is equipped with over 180 orchestra and percussion sounds, giving you the power to expand your music into unexplored territory. Included are traditional instruments such as strings and brass, plus electric and acoustic guitars, choir, church organ, harp, ethnic sounds, synthesizers, and a wide range of drum kits. With the Virtual Tone Wheel sound engine, you can play amazing organ sounds using Treble (upper), Chord (lower) and Bass (pedal) sections, with harmonic bar controls to personalize your organ sounds for any musical style. Four internal memory areas (8 MB each) are provided for loading new sounds from the Roland sound library.With the FR-8x, more layering and zone setup options are possible in the right-hand keyboard modes than ever before. Whole, Zone, High, and Low modes are provided, giving you the ability to play up to four different tones at once. Left-hand keyboard modes now include layering options as well. The programmable Drum function takes accordion performance to a fun new dimension, letting you play percussion sounds manually with the Bass & Chord buttons.Explore all-new sonic textures with the FR-8x’s fourindependent multi-effects engines (MFX), which provide dedicated processing for the Accordion, Orchestra 1,Orchestra 2, and Orchestra Chord sections. Each engine has 84 different effects types, offering a wide range of enhancement from subtle to dramatic. With the onboard looper, you can instantly record and overdub accordion performances using the FR-8x’s enormous selection of sounds, creating impressive,on-the-spot backing accompaniment for improvisation.USB Song Playback, Recording, and MoreThe handy MP3/WAV song player lets you play along with pre-recorded musical tracks for practice and live backing via optional USB memory. Just plug your USB stick into the convenient front-panel plug, then select and play songs with dedicated, easy-to-reach controls. And with the touch of a button, your accordion performances can be recorded directly to USB memory as well, perfect for archiving, evaluation, and education. Via the USB host port on the side panel, you can connect the FR-8x to your computer for data storage, customization ofV-Accordion sound sets, and easy-to-install software updates.[Keyboard, Bass & Bellows]- Right Hand41 keys piano type with velocity sensitive and aftertouch- Left Hand120 bass buttons velocity sensitive. Standard, Free Bass mode, Orch. Bass, Orch. Chord, Orch. Free Bass.- Bass & Chord Mode2 Bs Rows,3 Bs Rows A-7th, 3 Bs Rows A-5dim, 3 Bs Rows B-7th, 3 Bs Rows B-5dim, 3 Bs Rows Bx-7th , 3 Bs Rows Belgium- Free Bass ModeMinor 3rd, Bajan, Fifth, North Europe, Finnish- BellowsAdvanced “Dynamic Bellows Behavior” technology to manage the behavior of bellows.- Bellows ResistanceOn, Off, -63 to 0 to +64- Bellows CurveFixed Low, Fixed Med, Fixed High, X-Light, Light, Standard, Heavy, X-Heavy[Sound Source]- Max Polyphony128 voices- Tones (Accordion Set)100 Accordion Sets, each one including: 14 Treble Registers, 7 Bass/Chord registers, 7 Free Bass registers, 7 Orchestra Free Bass registers, 7 Orchestra Bass registers, 7 Orchestra Chord registers, 180 Orchestral sounds (28 real time + others selectable by MENU), 18 Drum Sets- Reed Footages7 Treble, 5 Bass, 3 Chord, 2 Free Bass- Additional SoundsUploadable from USB memory and saved on internal memory[Orchestral Sounds]180: 28 real time (14x2) the others selectable by MENU[Organ Sounds (Virtual Tone Wheel)]32 presets for Treble, Chord and Free Bass sections, 16 presets x Bass section.Up to 28 Harmonic Bar combinations customizable, can be controlled and shaped by bellows.[Orchestral Bass Sounds]180: 7 real time, the others selectable by MENU[Orchestral Chord Sounds]180: 7 real time, the others selectable by MENU [Orchestral Free Bass Sounds]180: 7 real time, the others selectable by MENU[Drum Sets]18[User Programs]1400: 100 User Program Bank x 14 registers[APBM (Advanced Physical Behavior Modeling)]- NoisesStopping-reed growl, Closing valve noise, Left button noise- Individual Reed SimulationHysteresis threshold, Expression curve, Pressure variant filter, Pressure variant pitch deviation- Switching Reed Sound WaveBy bellows accelerationBy note repetition speed- Bellows Opening/Closing Sound ChangeBy bellows opening/closing detection- Bellows BehaviorDynamic Bellows Behavior technology for a perfect simulation of the bellows behavior in an acoustic accordion[Musette Tuning]- Micro-Tuning Presets16 Types: Off, Dry, Classic, F-Folk, American L/H, North Europe, German L/H, D-Folk L/H, Alpine, Italian L/H, French, Scottish- Fine Tuning Reed Footages 8- / 8+-100 to 0 to +100[Effects]- Reverb/Chorus/Delay8 types, 8 types, 10 types- MFX Multi EffectsMFX x 4 (84 types) for: Accordion, Orchestra 1, Orchestra 2, Orch Chord/Orch Free Bass- Rotary for Organ SoundSlow/Fast with Vibrato, Chorus, Overdrive and VK-Rotary- “Cassotto” SimulationYes[Panel Controls]- Knob Controls & RegistersVolume, Balance, Reverb Chorus, Delay, Effect (assignable knob), 14 x Accordion/Orchestra1/Orchestra2/OrganFR-8x Specifications- EncoderData Edit with Enter- Navigation SwitchesUp, Down, Menu/Write, Exit/Jump- Other SwitchesSet Up, Set Down, Orch 1 On/Off, Orch 2 On/Off, Organ On/Off, Accordion On/Off, Orch Bass On/Off, Orch Chord/Free Bass On/Off, Free Bass On/Off, Bass&Chord On/Off, Drums On/Off, Bass to Treble On/Off, User Program On/Off, Song List On/Off, Power On/Off, Charge On/Off, Loop/Wave/MP3 player: Loop, Reset/Stop, Play/ Pause, Audio Rec- Chin Switches3 programmable chin switches- Additional Switches6 user assignable function switches on last row of bass buttons[Operation Mode]- Accordion, Orchest1/Organ, Orchest2, DrumZone, High, Low- Octave-1, 0, +1 for Treble, -3, 0, +3 for Orchest1, Orchest2- Drum Shift-36 to 0 to +36- Orchestra Chord Guitar ModeGtr Table1, Gtr Table2, Gtr Table3- Sound EditOrchest1, Orchest2, Orch Bass, Orch Chord, Orch Free Bass- Bass to TrebleOn/Off- Part MuteAccordion, Orchest 1, Orchest 2, Organ, Bass&Chord, Free Bass, Orch Bass, Orch Chord, Orch Free Bass- Bass & Chord with Drum/Percussion Sounds Programmable drum/percussion sounds for Bass/Orch Bass 2 rows, Chord/Orchestra Chord 4 rows.- Audio Player and Audio RECMP3/Wave player from USB memory and REC on USB- Audio LoopREC (with Overdub function) and Play- Speakers OffOn/Off adjustable via Menu parameter- Editing and WriteFull parameters for each section - New Graphic User Interface [MIDI Functions]- Ext. Seq. Playback (MIDI IN) or USB Computer Accordion, Bass&Chord, Orchest1, Orchest2, Organ, Orch Bass, Orch Chord, Orch Free Bass, ALL (Local Off function)- Start/Stop MIDI TXSend Start/Stop by pushing Alpha dial[Others]- Display ColourLCD 2,4” 320 x 240 pixel- Rated Power Output2 x 25W RMS- Speakers2 x 9 cm neodymium speakers2 tweeters- Wave Expansion4 internal areas (8Mb each) to load new sounds- Power SupplySupplied AC adaptor PSB-14U, rechargeable Ni-MH battery pack 24V-4500mAhExpected battery life under continuous use: 8-hours speaker ON mode, 11-hours speaker OFF mode- Onboard ConnectorsOUTPUT jacks L/Mono (Treble), R/Mono (Bass): 1/4”phone type, PHONES jack: 1/4” phone type, MIDI OUT connector, MIDI IN connector, USB MEMORY connector type A, USB COMPUTER connector type B, DC IN connector (use Roland PSB-14U AC adaptor only)- AccessoriesPSB-14U AC Adaptor, Power cord (for connectingthe AC adaptor), rechargeable Ni-MH battery pack24V-4500mAh, Owner's Manual, Reference caps for the bass buttons, Straps, Accordion Cloth, accordion soft bag- Options (sold separately)USB flash memory (M-UF-series), Headphones RH-200, RH-300, rechargeable Ni-MH battery pack 24V-4500mAh, external pedal footswitch- Colour VariationBlack, Red[Size and Weight]- Size415 (H) x 543 (W) x 280 (D) mm16-3/8 (H) x 21-7/16 (W) x 11-1/16 (D) inches- Weight12.1 Kg, 26 lbs 11 oz without strapsAll specifications and appearances are subject to change.FR-8x Specifications。

宽频声导抗声能吸收率测试

宽频声导抗声能吸收率测试

宽频声导抗声能吸收率测试熊琪(综述);罗仁忠(审校)【期刊名称】《听力学及言语疾病杂志》【年(卷),期】2015(000)003【总页数】5页(P315-319)【作者】熊琪(综述);罗仁忠(审校)【作者单位】广州市妇女儿童医疗中心耳鼻喉科广州 510120;广州市妇女儿童医疗中心耳鼻喉科广州 510120【正文语种】中文【中图分类】R764.04在对新生儿进行听力筛查时,当外耳道和中耳功能异常,如:耳道内有胎脂、胎粪、羊水或中耳积液时,无论耳蜗和听神经正常与否,都会表现为听力筛查不通过。

婴幼儿听力筛查不通过者多为传导性听力损失,最常见的原因为中耳积液,这与婴幼儿外耳及中耳的特殊解剖结构有关。

新生儿鼓室内有间充质[1],乳突气化不全,随鼓室发育间充质可以逐渐被吸收,因此,其中耳积液所致的传导性听力损失可以随中耳发育成熟而逐渐恢复正常,无需治疗;但新生儿听力筛查并不能区分传导性和感音神经性听力损失,因此有必要联合检测中耳功能,准确评估婴幼儿中耳功能对区分传导性和感音神经性聋及临床处理十分关键。

本文主要介绍一种新的婴幼儿中耳功能测试方法,即宽频声导抗声能吸收率测试(wideband tympanometry-absorbance,WBT-A)。

我国现行的声导抗测试探测音为226 Hz和1 000 Hz,226 Hz探测音声导抗采用85 d B SPL纯音信号,测试压力从+200 daPa~-200 daPa变化时声导纳的变化。

其原理为声波进入耳道到达鼓膜,由中耳系统的声导纳决定鼓膜振动[2],到达鼓膜的一部分声信号会传入中耳,另一部分被鼓膜反射回耳道,最终传入中耳的声信号与鼓膜处的声导纳成正比[3]。

耳道中的声压级(SPL)与麦克风的输出电压成正比,与声导纳成反比,通过监测输出电压和反射回耳道的声压级,推算鼓膜处的声导纳从而推算进入中耳的声能。

226 Hz探测音声导抗对于区分成人和较大儿童的中耳功能有着十分重要意义,但并不适合婴幼儿[4,5]。

abaqus结构分析单元类型

abaqus结构分析单元类型

;this wordfile adds the code folding function which is useful to ignore rows of numbers,enjoy~;updated in 20130116, based on the wordfile "abaqus_67ef(20080603)";Syntax file for abaqus v6.12 keywords ,code folding enabled;add *ANISOTROPIC *ENRICHMENT *LOW -DISPLACEMENT HYPERELASTIC;newly add /C?"ElementType";delete DISPLACEMENT;delete MASS in /C2"Keywords2"/L29"abaqus_612" Nocase File Extensions = inp des dat msg/Delimiters = ~!@$%^&()_-+=|\/{}[]:;"'<> ,.?//Function String = "%[ ^t]++[ps][a-z]+ [a-z0-9]+ ^(*(*)^)*{$"/Function String 1 = "%[ ^t]++[ps][a-z]+ [a-z0-9]+ ^(*(*)^)[ ^t]++$"/Member String = "^([A-Za-z0-9_:.]+^)[ ^t*&]+$S[ ^t]++[(=);,]"/Variable String = "^([A-Za-z0-9_:.]+^)[ ^t*&]+$S[ ^t]++[(=);,]"/Open Fold Strings = "*" "**""***"/Close Fold Strings = "*" "**""***"/C1"Keywords1" STYLE_KEYWORD*ACOUSTIC *ADAPTIVE *AMPLITUDE *ANISOTROPIC *ANNEAL *AQUA *ASSEMBLY *ASYMMETRIC *AXIAL *BASE *BASELINE *BEAM*BIAXIAL *BLOCKAGE *BOND *BOUNDARY *BRITTLE *BUCKLE *BUCKLING *BULK *C *CAP *CAPACITY *CAST *CAVITY *CECHARGE*CECURRENT *CENTROID *CFILM *CFLOW *CFLUX *CHANGE *CLAY *CLEARANCE *CLOAD *CO *COHESIVE *COMBINED *COMPLEX*CONCRETE *CONDUCTIVITY *CONNECTOR *CONSTRAINT *CONTACT *CONTOUR *CONTROLS *CORRELATION *COUPLED *COUPLING*CRADIATE *CREEP *CRUSHABLE *CYCLED *CYCLIC *D *DAMAGE *DAMPING *DASHPOT *DEBOND *DECHARGE *DECURRENT*DEFORMATION *DENSITY *DEPVAR *DESIGN *DETONATION *DFLOW *DFLUX *DIAGNOSTICS *DIELECTRIC *DIFFUSIVITY*DIRECT *DISPLAY *DISTRIBUTING *DISTRIBUTION *DLOAD *DRAG *DRUCKER *DSA *DSECHARGE *DSECURRENT *DSFLOW*DSFLUX *DSLOAD *DYNAMIC *EL *ELASTIC *ELCOPY *ELECTRICAL *ELEMENT *ELGEN *ELSET *EMBEDDED *EMISSIVITY*END *ENERGY *ENRICHMENT *EOS *EPJOINT *EQUATION *EULERIAN *EXPANSION *EXTREME *FABRIC *FAIL *FAILURE*FASTENER *FIELD *FILE *FILM *FILTER *FIXED *FLOW *FLUID *FOUNDATION *FRACTURE *FRAME *FREQUENCY *FRICTION*GAP *GASKET *GEL *GEOSTATIC *GLOBAL *HEADING *HEAT *HEATCAP *HOURGLASS *HYPERELASTIC *HYPERFOAM *HYPOELASTIC*HYSTERESIS *IMPEDANCE *IMPERFECTION *IMPORT *INCIDENT *INCLUDE *INCREMENTATION *INELASTIC *INERTIA*INITIAL *INSTANCE *INTEGRATED *INTERACTION *INTERFACE *ITS *JOINT *JOINTED *JOULE *KAPPA *KINEMATIC*LATENT *LOAD *LOADING *LOW *M1 *M2 *MAP *MASS *MATERIAL *MATRIX*MEMBRANE *MODAL *MODEL *MOHR *MOISTURE*MOLECULAR *MONITOR *MOTION *MPC *MULLINS *NCOPY *NFILL *NGEN *NMAP *NO *NODAL *NODE *NONSTRUCTURAL*NORMAL *NSET *ORIENTATION *ORNL *OUTPUT *PARAMETER *PART *PERIODIC *PERMEABILITY *PHYSICAL *PIEZOELECTRIC*PIPE *PLANAR *PLASTIC *POROUS *POST *POTENTIAL *PRE *PREPRINT *PRESSURE *PRESTRESS *PRINT *PSD *RADIATE*RADIATION *RANDOM *RATE *RATIOS *REBAR *REFLECTION *RELEASE *RESPONSE *RESTART *RETAINED *RIGID *ROTARY*SECTION *SELECT *SFILM *SFLOW *SHEAR *SHELL *SIMPEDANCE *SIMPLE *SLIDE *SLOAD *SOILS *SOLID *SOLUBILITY*SOLUTION *SOLVER *SORPTION *SPECIFIC *SPECTRUM *SPRING *SRADIATE *STATIC *STEADY *STEP *SUBMODEL*SUBSTRUCTURE *SURFACE *SWELLING *SYMMETRIC *SYSTEM *TEMPERATURE *TENSILE *TENSION *THERMAL *TIE *TIME*TORQUE *TRACER *TRANSFORM *TRANSPORT *TRANSVERSE *TRIAXIAL *TRS *UEL *UNDEX *UNIAXIAL *UNLOADING *USER*VARIABLE *VIEWFACTOR *VISCO *VISCOELASTIC *VISCOUS *VOID *VOLUMETRIC *WAVE *WIND-AXISYMMETRIC -DEFINITION -DISPLACEMENT -SIMULATION -SOIL -TENSION /C2"Keywords2"ACTIVATION ADDED AREA ASSEMBLE ASSEMBLY ASSIGNMENT AXIAL BEHAVIOR BODY BULKCASE CAVITY CENTER CHAIN CHANGE CHARGE CLEARANCE COMPACTION COMPONENT COMPRESSION CONDITIONS CONDUCTANCE CONDUCTIVITY CONSTANTS CONSTITUTIVE CONSTRAINT CONTACT CONTROL CONTROLS COPY CORRECTION COULOMB COUPLINGCRACKING CREEP CRITERIA CRITERION CYCLICDAMAGE DAMAGED DAMPING DATA DEFINED DEFINITION DELETE DENSITY DEPENDENCE DEPENDENT DERIVED DETECTIONDIFFUSION DIRECTORY DOFS DYNAMIC DYNAMICSEFFECT EIGENMODES ELASTIC ELASTICITY ELECTRICAL ELEMENT ELSET ENVELOPE EVOLUTION EXCHANGE EXCLUSIONSEXPANSIONFACTORS FAILURE FIELD FILE FLAW FLOW FLUID FLUX FOAM FORMAT FORMULATION FRACTION FREQUENCY FRICTIONGENERAL GENERATE GENERATION GRADIENTHARDENING HEAT HOLD HYPERELASTICINCLUSIONS INERTIA INFLATOR INITIATION INPUT INSTANCE INTEGRAL INTERACTION INTERFERENCE IRONLAYER LEAKOFF LENGTH LINE LINK LOAD LOCKM1 M2 MATERIAL MATRIX MEDIUM MESH METAL MIXTURE MODEL MODES MODULI MODULUS MOTIONNODAL NODE NSET NUCLEATIONORIGIN OUTPUTPAIR PARAMETER PART PARTICLE PATH PENETRATION PLASTIC PLASTICITY POINT POINTS POTENTIAL PRAGER PRINTPROPERTYRADIATION RATE RATIOS REDUCTION REFERENCE REFLECTION REGION RELIEF RESPONSE RESULTS RETENTIONSECTION SCALING SHAPE SHEAR SOLID SOLUTION SPECTRUM STABILIZATION STATE STEP STIFFENING STIFFNESS STOPSTRAIN STRESS SURFACE SWELLING SYMMETRYTABLE TECHNIQUE TEMPERATURE TENSION TEST THERMAL THICKNESS TO TORQUE TRANSFER TRANSPORTVALUE VARIABLES VARIATION VELOCITY VIEWFACTOR VISCOSITYWAVE WEIGHT/C3"ElementType" STYLE_ELEMENTAC1D2 AC1D3 AC2D3 AC2D4 AC2D4R AC2D6 AC2D8 AC3D4 AC3D6 AC3D8 AC3D8R AC3D10 AC3D15 AC3D20 ACAX3 ACAX4ACAX4R ACAX6 ACAX8 ACIN2D2 ACIN2D3 ACIN3D3 ACIN3D4 ACIN3D6 ACIN3D8 ACINAX2 ACINAX3 ASI1 ASI2 ASI2AASI2D2 ASI2D3 ASI3 ASI3A ASI3D3 ASI3D4 ASI3D6 ASI3D8 ASI4 ASI8 ASIAX2 ASIAX3B21 B21H B22 B22H B23 B23H B31 B31H B31OS B31OSH B32 B32H B32OS B32OSH B33 B33HC3D4 C3D4E C3D4H C3D4P C3D4T C3D6 C3D6E C3D6H C3D6P C3D6T C3D8 C3D8E C3D8H C3D8HT C3D8I C3D8IH C3D8PC3D8PH C3D8PHT C3D8PT C3D8R C3D8RH C3D8RHT C3D8RP C3D8RPH C3D8RPHT C3D8RPT C3D8RT C3D8T C3D10 C3D10EC3D10H C3D10I C3D10M C3D10MH C3D10MHT C3D10MP C3D10MPH C3D10MPT C3D10MT C3D15 C3D15E C3D15H C3D15VC3D15VH C3D20 C3D20E C3D20H C3D20HT C3D20P C3D20PH C3D20R C3D20RE C3D20RH C3D20RHT C3D20RP C3D20RPHC3D20RT C3D20T C3D27 C3D27H C3D27R C3D27RH CAX3 CAX3E CAX3H CAX3T CAX4 CAX4E CAX4H CAX4HT CAX4ICAX4IH CAX4P CAX4PH CAX4PT CAX4R CAX4RH CAX4RHT CAX4RP CAX4RPH CAX4RPHT CAX4RPT CAX4RT CAX4T CAX6CAX6E CAX6H CAX6M CAX6MH CAX6MHT CAX6MP CAX6MPH CAX6MT CAX8 CAX8E CAX8H CAX8HT CAX8P CAX8PH CAX8RCAX8RE CAX8RH CAX8RHT CAX8RP CAX8RPH CAX8RT CAX8T CAXA4HN CAXA4N CAXA4RHN CAXA4RN CAXA8HN CAXA8NCAXA8PN CAXA8RHN CAXA8RN CAXA8RPN CCL12 CCL12H CCL18 CCL18H CCL24 CCL24H CCL24R CCL24RH CCL9 CCL9HCGAX3 CGAX3H CGAX3HT CGAX3T CGAX4 CGAX4H CGAX4HT CGAX4R CGAX4RH CGAX4RHT CGAX4RT CGAX4T CGAX6 CGAX6HCGAX6M CGAX6MH CGAX6MHT CGAX6MT CGAX8 CGAX8H CGAX8HT CGAX8R CGAX8RH CGAX8RHT CGAX8RT CGAX8T CIN3D12RCIN3D18R CIN3D8 CINAX4 CINAX5R CINPE4 CINPE5R CINPS4 CINPS5R COH2D4 COH2D4P COH3D6 COH3D6P COH3D8COH3D8P COHAX4 COHAX4P CONN2D2 CONN3D2 CPE3 CPE3E CPE3H CPE3T CPE4 CPE4E CPE4H CPE4HT CPE4I CPE4IHCPE4P CPE4PH CPE4R CPE4RH CPE4RHT CPE4RP CPE4RPH CPE4RT CPE4T CPE6 CPE6E CPE6H CPE6M CPE6MH CPE6MHTCPE6MP CPE6MPH CPE6MT CPE8 CPE8E CPE8H CPE8HT CPE8P CPE8PH CPE8R CPE8RE CPE8RH CPE8RHT CPE8RPCPE8RPH CPE8RT CPE8T CPEG3 CPEG3H CPEG3HT CPEG3T CPEG4 CPEG4H CPEG4HT CPEG4I CPEG4IH CPEG4R CPEG4RHCPEG4RHT CPEG4RT CPEG4T CPEG6 CPEG6H CPEG6M CPEG6MH CPEG6MHT CPEG6MT CPEG8 CPEG8H CPEG8HT CPEG8RCPEG8RH CPEG8RHT CPEG8T CPS3 CPS3E CPS3T CPS4 CPS4E CPS4I CPS4R CPS4RT CPS4T CPS6 CPS6E CPS6M CPS6MTCPS8 CPS8E CPS8R CPS8RE CPS8RT CPS8TDASHPOT1 DASHPOT2 DASHPOTA DC1D2 DC1D2E DC1D3 DC1D3E DC2D3 DC2D3E DC2D4 DC2D4E DC2D6 DC2D6E DC2D8DC2D8E DC3D10 DC3D10E DC3D15 DC3D15E DC3D20 DC3D20E DC3D4 DC3D4E DC3D6 DC3D6E DC3D8 DC3D8E DCAX3DCAX3E DCAX4 DCAX4E DCAX6 DCAX6E DCAX8 DCAX8E DCC1D2 DCC1D2D DCC2D4 DCC2D4D DCC3D8 DCC3D8D DCCAX2DCCAX2D DCCAX4 DCCAX4D DCOUP2D DCOUP3D DGAP DRAG2D DRAG3D DS3 DS4 DS6 DS8 DSAX1 DSAX2EC3D8R EC3D8RT ELBOW31 ELBOW31B ELBOW31C ELBOW32 EMC2D3 EMC2D4 EMC3D4 EMC3D8F2D2 F3D3 F3D4 FAX2 FLINK FRAME2D FRAME3D FC3D4 FC3D6 FC3D8 GAPCYL GAPSPHER GAPUNI GAPUNIT GK2D2 GK2D2N GK3D12M GK3D12MN GK3D18 GK3D18N GK3D2 GK3D2N GK3D4LGK3D4LN GK3D6 GK3D6L GK3D6LN GK3D6N GK3D8 GK3D8N GKAX2 GKAX2N GKAX4 GKAX4N GKAX6 GKAX6N GKPE4 GKPE6GKPS4 GKPS4N GKPS6 GKPS6NHEATCAPIRS21A IRS22A ISL21A ISL22A ITSCYL ITSUNI ITT21 ITT31JOINT2D JOINT3D JOINTCLS3S LS6MASS M3D3 M3D4 M3D4R M3D6 M3D8 M3D8R M3D9 M3D9R MAX1 MAX2 MCL6 MCL9 MGAX1 MGAX2PC3D PIPE21 PIPE21H PIPE22 PIPE22H PIPE31 PIPE31H PIPE32 PIPE32H PSI24 PSI26 PSI34 PSI36Q3D4 Q3D6 Q3D8 Q3D8H Q3D8R Q3D8RH Q3D10M Q3D10MH Q3D20 Q3D20H Q3D20R Q3D20RHR2D2 R3D3 R3D4 RAX2 RB2D2 RB3D2 ROTARYIS3 S3T S3R S3RS S3RT S4 S4T S4R S4RT S4R5 S4RS S4RSW S8R S8R5 S8RT S9R5 SAX1 SAX2 SAX2T SAXA1NSAXA2N SC6R SC6RT SC8R SC8RT SFM3D3 SFM3D4 SFM3D4R SFM3D6 SFM3D8 SFM3D8R SFMAX1 SFMAX2 SFMCL6 SFMCL9SFMGAX1 SFMGAX2 SPRING1 SPRING2 SPRINGA STRI3 STRI65T2D2 T2D2E T2D2H T2D2T T2D3 T2D3E T2D3H T2D3T T3D2 T3D2E T3D2H T3D2T T3D3 T3D3E T3D3H T3D3TWARP2D3 WARP2D4。

ansys界面菜单翻译

ansys界面菜单翻译

ansys界面菜单翻译Abbr -- 缩写Abbreviation -- 缩写词About -- 关于absolut -- 绝对Active -- 当前add -- 增加add/edit/delete -- 增加/编辑/删除Additional Out -- 附加输出adius -- 心Adjacent -- 相邻Adv -- 高级Advection -- 对流Algorithm -- 算法align -- 定位Align WP with -- 工作区排列按ALPX -- 热膨胀系数Also 副词再Ambient Condit'n -- 环境条件amplitude -- 振幅Analysis -- 分析Angle -- 角度Angles -- 角度Angular -- 角度Animate -- 动画Animation -- 动画Anno -- 注释Anno/Graph -- 注释/图Annotation -- 注释文字Annulus -- 环面ANSYS Multiphysics Utility Menu -- ANSYS 综合物理场有限元分析菜单Any -- 任意apply -- 应用Arbitrary -- 任意arccosine -- 反余弦Archive -- 合并Arcs -- 圆弧线arcsine -- 反正弦area -- 面Area Fillet -- 面圆角Area Mesh -- 已划分的面Areas -- 面Array -- 数组arrow -- 箭头Assembly -- 部件At Coincid Nd -- 在两节点间Attch 动词接触Attr -- 特征Attrib -- 属性Attributes -- 属性Auto -- 自动Automatic Fit -- 自适应Axes -- 坐标轴Axis -- 坐标轴Axi-Symmetric -- 轴对称back up -- 恢复Background --背景Banded -- 条状Based -- 基础BC -- 边界Beam -- 梁behavior -- 特性Bellows -- [密封]波纹管Bias -- 偏置Biot Savart -- 毕奥-萨瓦河Bitmap -- BMP图片Block -- 块Body -- 体Booleans -- 布尔操作box -- 框Branch -- 分支brick orient -- 划分块(方向) Builder -- 生成器Built-up -- 合成Buoyancy Terms -- 浮力项By Circumscr Rad -- 外切正多边形By End KPs -- 始点、终点By End Points -- 直径圆By End Pts -- 底圆直径By Inscribed Rad -- 内接?正多边形By Picking -- 鼠标选取By Side Length -- 通过边长确定多边形By Vertices -- 通过顶点确定多边形calc -- 运算Calcs -- 计算Capacitor -- 电容Capped/Q-Slice -- 切面透明度设置Capping -- 盖Capture -- 打印Cartesian -- 笛卡儿坐标系Case -- 情况CE Node Selected -- 约束节点选择cent 中心Center -- 中心centr 中心ceqn -- 约束CFD -- 计算流体力学(CFD) Change 动词更换Check -- 检查Checking -- 检查Checks -- 检查Circle -- 圆Circuit -- 电路circumscr -- 外接圆Clr Size -- 清除尺寸CMS -- 组件模式综合Cnst -- 常数Cntl -- 控制Cntrls -- 控制Coincident -- 重合Collapse -- 折叠收起Color -- 颜色Colors -- 颜色Common -- 普通Comp -- 组件complex variable -- 复数变量Component -- 组件Components -- 组件Compress -- 精减Concats -- 未划分Concentrate -- 集中concrete -- 混凝土Cond -- 导体Conditions -- 条件cone -- 圆锥Configuration -- 配置Connectivity -- 连通性Connt -- 连通区域consistent -- 固定Const -- 常数Constant Amplitude -- 恒幅Constants -- 常数Constr -- 约束Constraint -- 约束Constraints -- 约束constreqn -- 约束方程Contact -- 接触Contour -- 等值线Contour Plot -- 等值云图Contours -- 等值线contraction -- 收缩因子Control -- 控制Controls -- 控制*****ENCE *****OR -- 收敛精度*****ENCE VALUE -- 收敛值Convert ALPx --热膨胀系数转换Coor -- 坐标系Coord -- 坐标Coord Sys -- 坐标系coordinate -- 坐标Coordinates -- 坐标Coords -- 坐标corner -- 对角Corners -- 对角cornr -- 对角correl field -- 相关性区域correlation -- 相关性count -- 总数Couple -- 耦合Coupled -- 耦合Coupling -- 耦合CP Node Selected -- 耦合节点选择Create 动词新建creep -- 蠕变criteria -- 准则cross product -- 向量积cross-sectional -- 截面CS -- 坐标系csys-- 坐标系ctr -- 中点ctrl -- 控制ctrls -- 控制Cupl -- 耦合Curr -- 电流curvature -- 圆弧Curvature Ctr -- 曲率中心Curve -- 曲线custom -- 定制Cyc -- 循环Cyclic Expansion --循环扩展设置Cyclic Model -- 周向模型Cyclic Sector -- 扇型周向阵列cylinder -- 圆柱Cylindrical -- 柱坐标系Damper -- 阻尼[减震]器damping -- 阻尼系数Data -- 数据Data Tables -- 数据表格Database -- 数据库DB -- DB definitns -- 特征定义Deformed -- 已变形Degen -- 退化Degeneracy -- 退化Del -- 删除Del Concats -- 删除连接Delete -- 删除dependent -- 相关derivative -- 导数Design Opt -- 优化设计Device -- 设备differentiate -- 微分Digitize -- 数字化dimensions -- 尺寸Diode -- 二极管Directory -- 目录discipline -- 练习Displacement -- 变形Display -- 显示distances -- 距离Divide -- 划分Divs -- 位置DOF -- 自由度dofs -- 自由度dot product -- 点积Dupl -- 复制edge -- 边缘Edit -- 编辑Elbow -- 弯管[肘管] ElecMech -- 电磁ElecStruc -- 静电-结构electr -- 电磁Electric -- 电气类electromag -- 电磁electromagnetic -- 电磁Electromechanic -- 电-机械elem -- 单元Elem Birth/Death -- 单元生/死Element -- 单元Elements -- 单元Elems -- 单元Elm -- 单元EMT CDISP -- 电磁陷阱CDISP Enable 形容词允许ENDS-- 端energy -- 能量ENKE -- 湍动能量Entities -- 实体Entity -- 实体EPPL COMP -- 塑性应变分量EPTO COMP -- 总应变eq -- 方程Eqn -- 方程Eqns -- 方程equation -- 方程式Erase -- 删除Est. -- 估算Everything -- 所有EX -- 弹性模量EX exclude -- 排除Execute -- 执行Execution -- 执行Expansion -- 扩展Expend All -- 展开全部Exponential -- 幂数[指数] exponentiate -- 幂指数Export -- 模型输出Ext Opts -- 拉伸设置Extend Line -- 延伸线extra -- 附加extreme -- 极值Extrude -- 拉伸EY -- 弹性模量EY EZ -- 弹性模量EZ face -- 面Facets -- 表面粗糙fact -- 因子factor -- 系数factr -- 因子failure -- 破坏Fast Sol'n -- 快速求解Fatigue -- 疲劳FD -- 失效挠度field -- 区域Fill -- 填充Fill between KPs --关键点间填入Fill between Nds -- 节点间填充fillet -- 倒角Fit -- 适当视图Flange -- 法兰Flip -- 翻转Floating Point -- 浮点***** -- 流体***** Set Up --流体运行设置Flow -- 流量Fluid -- 流体Flux -- 通量Fnc_/EXI -- 退出Fnc_/*****S -- 图形界面Focus Point -- 焦点force -- 力Format -- 格式Fourier -- 傅立叶级数Free -- 自由Freq -- 频率From Full -- 完全Full Circle -- 完整圆Func -- 函数function -- 函数Functions -- 函数Gap -- 间隙Gen -- 一般General -- 通用General Options -- 通用设置General Postproc--通用后处理器Generator -- 生成器Genl -- 普通Geom -- 单元Geometry -- 几何形状Get -- 获取Global -- 全局Globals -- 全局Glue -- 粘合gradient -- 梯度Graph -- 图Graphics -- 图形Graphs -- 图Gravity -- 引力(重力) Grid -- 网格GUI -- 图形用户界面GXY -- 剪切模量GXY GXZ -- 剪切模量GXZ GYZ -- 剪切模量GYZ hard -- 硬Hard Points -- 硬点Hard PT -- 硬点hardening -- 强化hex -- 六面体Hexagon -- 六边形Hexagonal -- 六棱柱hidden -- 隐藏higher-order -- 高阶Hill -- 希尔h-method -- 网格细分法hollow -- 空心Hollow Cylinder -- 空心圆柱体Hollow Sphere -- 空心球体hp-method -- 混合并行法I-J -- I-J imaginary -- 虚部Immediate -- 即时Import -- 模型输入Improve -- 改进independent -- 非相关Individual -- 单个Indp Curr Src -- 感应电流源Indp Vltg Src -- 感应电压源Inductor -- 电感Inertia -- 惯性Inertia Relief Summ -- 惯量概要Inf Acoustic -- 无穷声学单元init -- 初始化Init Condit'n -- 初始条件Initial -- 初始inquire -- 查询inscribed -- 内切圆Installation -- 安装int -- 强度integral -- 积分integrat -- 积分integrate -- 积分interactive -- 交互式Interface -- 接触面intermed -- 中间interpolate -- 插入Intersect -- 相交invert -- 切换is done -- 完成Isometric -- 等轴侧视图Isosurfaces -- 常值表面isotropic -- 各向同性Item -- 项目Items -- 项目Iteration -- 叠代Jobname -- 文件名Joint -- 连接Joints -- 连接KABS -- KABS Keypoint --关键点Keypoints -- 关键点kinematic -- 随动KP -- 关键点KP between KPs --关键点间设置kps -- 关键点Labeling -- 标志Layer -- 层Layered -- 分层Layers -- 层Layout -- 布局Lay-up -- 层布置Ld -- 载荷Legal Notices -- 法律声明Legend -- 图例Lib -- 库文件Library -- 材料库文件Licensing -- 许可Light Source -- 光源设置line -- 线Line Fillet -- 圆角Line Mesh -- 已划分的线Line w/Ratio -- 线上/比例Linear -- 线性Linearized -- 线形化Lines -- 线List -- 列出List Results -- 列表结果Ln' s -- 段Load -- 加载Load Step -- 载荷步Loads -- 载荷Loc -- 坐标值Local -- 局部Locate -- 定位Location -- 位置Locations -- 位置Locs -- 位置Log File -- 命令流记录文件lower-order -- 低阶LSDYNA -- LSDYNA(动力分析) LS-DYNA -- 显示动力分析Macro -- 宏命令Magnification -- 放大倍数management -- 管理Manager -- 管理器manual -- 手动ManualSize -- 手动尺寸Map -- 图Mapped -- 映射Mass -- 导体Mass Type -- 聚合量类型Master -- 主mat -- 材料Mat Num -- 材料编号Material -- 材料Materials -- 材料matl -- 材料Matls -- 材料maximum -- 最大Mechanical -- 机械类member -- 构件memory -- 内存MenuCtrls -- 菜单控制Merge -- 合并mesh -- 网格Mesher -- 网格Meshing -- 网格划分MeshTool -- 网格工具Message -- 消息Metafile -- 图元文件Meth -- 方法MIR -- 修正惯性松弛Miter -- 斜接[管] Mod -- 更改Mode -- 模式Model -- 模型Modeling -- 建模Models -- 模型Modify -- 修改Modle -- 模型Module -- 模块moment -- 力矩More -- 更多multi -- 多multi-field -- 多物理场耦合Multilegend -- 多图multilinear -- 多线性Multiple Species -- 多倍样式multiplied -- 乘Multi-Plot -- 多窗口绘图Multi-Plots -- 多图表Multi-Window -- 多窗口Mutual Ind -- 互感Name -- 名称Named -- 已指定natural log -- 自然对数nd -- 节点nds -- 节点NL Generalized --非线形普通梁截面No Expansion -- 不扩展Nodal -- 节点Node -- 节点Nonlin -- 非线性Nonlinear -- 非线性Non-uniform -- 不均匀norm -- 法向Normal -- 法向Normals -- 没Num -- 编号NUMB -- NUMB Number --编号Numbered -- 编号Numbering -- 编号Numbers -- 编号NUXY -- 泊松比Oblique -- 等角轴侧视图Octagon -- 八边形Octagonal -- 八棱柱offset -- 偏移Offset WP by Increments -- 指针增量偏移Offset WP to -- 指针偏移到Operate -- 操作Operations -- 运算OPT -- 优化Options -- 设置Optn -- 设置opts -- 设置Ord -- 指令Order -- 顺序Orders -- 指令Orient Normals -- 确定最外层法向Origin -- 原点Orthotropic -- 正交各向异性Other -- 其他Out Derived -- 输出派生outp -- 输出Output -- 输出Over Results -- 整个过程结果Over Time -- 规定时间内全过程Overlaid -- 覆盖Overlap -- 重叠Pair -- 偶Pairwise -- 新生成的Pan -- 移动pan-zoom-rotate -- 移动-缩放-旋转par -- 参数名parall -- 平行Parameters -- 参数Parms -- 参数Part IDs -- 部分ID号Partial -- 部分Partial Cylinder -- 部分圆柱体Particle Flow -- 粒子流迹Partition -- 分割Parts -- 局部Path -- 路径PDS -- 概率设计系统Pentagon -- 五边形Pentagonal -- 五棱柱Percent Error -- 误差率Periodic/Cyclic Symmetry-- 周期/循环阵列Perspective -- 透视phase -- 相位pick -- 选取Picked -- 已选取Piecewise -- 分段Piezoelectric -- 压电元件Pipe -- 管Pipe Run -- 管操作Pipe Tee -- T型管Piping -- 管Plane -- 平面Plane Strn -- 平面应变plasticity -- 塑性plot -- 绘图plotctrls -- 绘图控制Plots -- 绘图P-method -- 高次单元法Pointer -- 指针poisson -- 泊松Polygon -- 多边形POST1 -- 通用后处理器POST26 -- 时间历程后处理器postpro -- 后处理器postproc -- 后处理器potential -- 势*****H -- 激活窗体preferences -- 参数选项Pre-integrated -- 前集成处理PREP7 -- 前处理器preprocessor -- 前处理器PRES -- 压力Pre-tens Elements -- 删除单元后合并节点pretension -- 主张Pretensn -- 自划分prism -- 棱柱Pro -- Pro Prob -- 概率profiles -- 档案资料Prop -- 属性Properties -- 属性Props -- 属性PRXY -- 泊松比PRXY PRXZ -- 泊松比PRXZ PRYZ -- 泊松比PRYZ PT -- 点Pts -- 点Pulse -- 脉冲Q-Slice -- 切面Quad -- 积分Quadratic -- 二次qualities -- 质量query -- 查询QUIT -- 退出R -- 圆rad -- 半径radiation -- 辐射矩阵radius -- 半径Raise -- 升起random -- 随机range of variable -- 变量范围rate -- 率Rate of Change for Model Mainpulation -- 模型缩放变化率设定Reaction -- 反作用Read -- 读取Read Input from -- 读取命令流文件Real Constante -- 实常数RealConst -- 实常数Rectangle -- 矩形Redirect -- 重定向Reducer -- 接头ref -- 判定Refine -- 细化Reflect -- 阵列reflection -- 镜像Region -- 区域Regions -- 区域Relax/Stab/Cap -- 松弛/稳定/容量Relaxation -- 松弛release -- 版本Remesh -- 重划网格remove -- 删除rename -- 重命名Reorder -- 重置Replay Animation -- 重新播放动画Replot -- 重新绘图Report -- 报告Report -- 报告Res/Quad -- 结果/积分Reselect -- 分解Reset -- 取消Residual -- 余量Resistor -- 电阻response -- 响应Restart -- 重启动Restart/Clear -- 重启动/清除Restart/Iteration -- 重启动/迭代Restart/Load step -- 重启动/载荷步Restart/Set -- 重启动/设置Restart/Time -- 重启动/时间片Restore -- 恢复Result -- 结果Results -- 结果RESUM -- 恢复RESUM_DB -- 恢复_DB resume -- 恢复Reverse -- 相反Reverse Video -- 反色图像Rigid -- 刚性ROM -- 存储器Rotary -- 扭转Rotate -- 旋转Rotating -- 旋转rotational -- 旋转***** -- 估计分析模块SAT -- SAT SAVE -- 保存SAVE_DB -- 保存_DB Scalar -- 变量scale -- 比例scale factor -- 比例因子Scale Icon -- 图符尺度Scaling -- 比例Screen -- 屏幕se -- 超级单元secn -- 截面号sect -- 截面Sect Mesh -- 自定义网格Section -- 截面Sections -- 截面Sector -- 部分Segment -- 分段Segment Memory -- 分段保存segmented -- 分段Segments -- 分段Sel -- 选择sele -- 选择Select -- 选择Selected -- 已选择Selection -- 选择septagon -- 七边形septagonal -- 七边形的Set -- 设置Set Grid -- 设置栅格Set Up -- 设置Sets -- 设置Settings -- 设置Shaded -- 阴影Shape -- 形状Shell -- 壳Show -- 显示sided -- 边sine -- 正弦Singularity -- 奇异点sint -- 应力强度Sinusoidal -- 正弦Size -- 尺寸skinning -- 2线Slide Film -- 滑动薄膜Smart -- 精确SmartSize -- 智能尺寸Solid -- 实体Solid Circle -- 定圆心圆Solid Cylinder -- 定圆心圆柱体Solid Sphere -- 定圆心球体Solu -- 求解*****N -- 求解器Solver -- 求解Sort -- 排序source --源Specification -- 约定Specifications -- 明细单Specified -- 指定Specified -- 指定Specified Loc -- 指定局部坐标spectrm -- 响应谱Spectrum -- 频谱Sphere -- 球体Spherical -- 球坐标系spline -- 样条Splines -- 样条曲线SpotWeld -- 点焊[缝、接点] Spring -- 弹簧Spring Support -- 弹性支撑Spring-Gap Supp --弹性间隙支撑Src Waveform -- 屏幕波形Standed -- 标准Start -- 开始Start New -- 新建Start Num -- 初始编号Start Number -- 初始编号state -- 状态stats -- 状态Status -- 状态step -- 步store -- 存贮stress -- 应力Stresses -- 应力strn -- 应变Strnd Coil -- 线圈struct -- 结构structural -- 结构Style -- 样式submodeling -- 子模型Subtract -- 减去Summary -- 概要superelem -- 超单元superelement -- 超单元Superelements -- 超单元surf -- 表面Surface -- 面Surfaces -- 表面Sweep -- 扫描switch -- 转换Symbols -- 符号Symmetry Expansion -- 模型对称性扩展-镜像复制扫描Sys -- 系统Table -- 表tan -- 相切tangent -- 相切Taper -- 锥形Target -- 目标tech -- 技术TEMP -- 温度Temp Variatio -- 临时变量Temps -- 温度Tet -- 四面体Tets -- 测试Textured -- 纹理Texturing -- 材质thermal -- 热Thickness -- 壳厚度thickness func -- 函数定义变化的厚度Through -- 通过thru -- 通过Time Integration -- 时间积分Time Stepping -- 时间步设定Time-harmonic -- 时间-谐波timehist -- 时间历程TimeHist Postproc -- 时间历程后处理器Title -- 标题Toggle -- 扭转Tolerance -- 误差T oolbar -- 工具栏Topics -- 主题topological -- 拓扑torus -- 环行圆柱Trace -- 痕迹Trans -- 传递Transducer -- 传感器Transducers -- 传感器Transfer -- 移动Transient -- 暂态Translucency -- 半透视设置Traveling Wave -- 传导波Triangle -- 三角形Triangular -- 三棱柱ttribs -- 属性Turbulence -- 湍流Tutorials -- 指南Type -- 类型Types -- 类型Uniform -- 均布Units -- 单位Unload -- 卸载unpick -- 排除Unselect -- 不选择Update -- 更新user -- 用户User Numbered -- 自定义编号User Specified Expansion -- 自定义扩展模式utility -- 应用分析value -- 值Valve -- 阀Variables -- 变量Vector -- 矢量vectors -- 矢量Vector-Scalar -- 矢量-变量VFRC -- 体积含量View -- 视图Viewing -- 视图visco -- 粘Vltg -- 电压VOF -- 流体Volm -- 体Volms -- 体Volu -- 体volume -- 体Volumes -- 立体Volumes Brick Orient -- 沿Z向立方体Volus -- 体VS -- 电压源VX -- 速度X方向VY -- 速度Y方向VZ -- 速度Z方向w/Same -- w/相同节点Warning/Error -- 警告/错误warp --翘曲Wavefront -- 波前win -- 窗口Window -- 窗口Wire -- 导线wish -- 希望with -- 通过Working -- 工作Working Plane -- 工作平面WorkPlane -- 工作平面WP -- 工作平面WP Status -- 工作区指针状态Write DB log file -- 写入日志WrkPlane -- 工作面Zener -- 齐纳Zoom -- 缩放。

声学基础专业英文

声学基础专业英文

声学基础专业英⽂声学英⽂词彙声⾳,声学及其分⽀声⾳:sound可听声(阈):audible sound超声:ultrasound次声:infrasound⽔声:underwater sound地声:underground sound噪声:noise声学:Acoustics物理声学:Physical Acoustics;⾮线性声学:Nonlinear Acoustics 超声学:Ultrasonics;次声学:Infrasonics;⽔声学:Underwater Acoustics⽓动声学:Aeroacoustics建筑声学:Architectural Acoustics;室內声学:Room Acoustics⾳乐声学:Musical Acoustics环境声学:Environmental Acoustics海洋声学:Oceanic Acoustics电声学:Electroacoustics语⾔声学:Speech Acoustics;语⾳信号处理:Speech Processing声信号处理:Acoustical Signal Processing光声学:Optoacoustics医学超声学:Medical Ultrasonics⽣物声学:Bioacoustics声化学:Sonochemistry⽣理声学:Physiological Acoustics;⼼理声学:Phsychoacoustics振动振动:vibration受迫振动:forced vibration阻尼振动弹性:elasticity劲度:stiffness;弹性常数:stiffness constant恢复⼒:restoration;张⼒:tension惯性,声质量:inertance⼒(机械)阻抗(阻,順,抗):mechanical impedance (resistance, compliance, reactance)⼒导纳(导,納):mechanical admittance, mobility (responsiveness, excitability)集总线路元件:lumped circuit elements共振:resonance;反共振:antiresonance参量共振:parametric resonance共鸣器,共振器:resonator亥姆霍茲共鸣器:Helmholtz resonator振⼦:oscillator激振器:vibrator隔振:isolation(阻抗型,导纳型)类⽐:(impedance-type, mobility-type) analogy摩擦(⼒):friction (force)阻尼(系数):damping (coefficient)衰变:decay谐波:harmonics,谐和:harmony基频:fundamental frequency固有(特征,本征)频率:natural (characteristic, eigen-) frequency简正频率(⽅式、模式):normal frequency (mode)波节:node;波腹:antinode, loop⾳:tone;泛⾳:overtone;⾳调:pitch;⾳⾊:timbre声媒质及其性质媒质、介质:medium可压缩的:compressible;不可压缩的: incompressible压缩率,压缩系数:compressibility可相融的,不相融的:miscible,immiscible绝热的:adiabatic;等温的: isothermal体(剪切)弹性系数,体(切)弹性模量:bulk (shear) modulus热传导(率):thermal conduction (conductivity)(容变)粘性:(bulk) viscousity(切变、容变)粘滞系数:viscous coefficient, coefficient of (shear, bulk) viscosity ⽆黏(流体):inviscid (fluid)声速:sound speed频散:dispersion吸收(损失):absorption (loss);吸收系数:absorptivity, absorption coefficient 耗散(损失):dissipation (loss)⾮均匀性:inhomogeneity多孔介质:porous media穿孔:peforation穿孔板:perforated plate穿孔⽐:ratio of perforation孔隙率:porosity声边界层(厚度)、趋肤深度:acoustic boundary layer (thickness),skin depth 叠加原理波数声波及传播声波:sound waves, acoustic waves机械(⽔,重⼒,声重⼒)波:mechanical (water, gravity, acoustic-gravity) waves传播:propagation;纵(横)波:longitudinal (transverse) waves⾏(驻)波:traveling (standing) waves平⾯(柱⾯,球⾯)波:plane (spherical, cylindrical) waves表⾯(瑞利,漸失)波:surface (Rayleigh, evanescent) waves压缩(体)波:compressional (bulk) waves声压缩切变(弯曲)波:shear (flexural, bending) waves(切)应变:(shear) strain(切)应⼒:(shear) stress波导:duct, waveguide;声管:pipe, tube导波:guided waves相(群)速度:phase (group) velocity质点(体积)速度:particle (volume) velocity声压(级):sound pressure (level)声强(级):sound intensity (level)声功率(级):sound power (level)响度(级):loudness (level)响亮(度):sonority分贝:decibel (dB)倍频程:octave声阻抗(阻,順,容,抗):acoustic impedance (resistance, compliance, capacitance, reactance);声质量:acoustic mass, acoustic inertance;声导纳(导,納):acoustic admittance, mobility (conductance, susceptance)声阻(抗,阻抗)率:specific acoustic resistance (reactance, impedance)声特性阻抗:acoustic characteristic impedance;法向声阻抗率:specific normal acoustic impedance声导率:acoustical conductivity转移阻抗:transfer impedance阻抗匹配:impedance matching声传输线:acoustic transmission line波前,波阵⾯:wavefront正(斜,掠)⼊射:normal (oblique, grazing) incidence 反射(系数):reflection (coefficient)透射(系数):transmission (coefficient)传输损失,隔声量:transmission loss质量作⽤定律:mass law折射:refraction;衍射:diffraction;⼲涉:interference 回响、回声:echo衰減(系数):attenuation (coefficient)驻波 standing wave⾏波 travelling wave声聚焦平⾯波球⾯波品质因数 qualityfactor涡旋:votex, 涡度:vorticity湍流:turbulence,层流:laminar flow绕射斯奈尔定律波⽮量全反射辐射,散射声源:sound source;源强:source strength点源:point source单极⼦:monopole;偶极⼦:dipole四极⼦:quadrupole活塞:piston像源:image source声场:sound field, acoustic field近(远)场:near (far) field声辐射(阻抗):acoustic radiation (impedance)声发射:acoustic emission散射(截⾯,损失):scattering (cross-section, loss)背向散射:backscattering互易性(原理):reciprocity指向性:directivity传声器指向性直达声:direct sound回声:echo混响:reverberate(动词),reverberation(名词)⾮线性振动与声冲击波:shock waves声孤⽴波:acoustic solitary waves;声孤⼦:acoustic solitons声马赫数:acoustic Mach number分岔:bifurcation;混沌:chaos次谐波(共振):subharmonics (resonance)声辐射压(⼒):acoustic radiation pressure (force)声效应空化:cavitation声致发光:sonoluminescence声化学:sonochemistry声悬浮:acoustic levitation⽓泡共振:bubble resonance声材料与控制吸声材料(器):sound absorbent (absorber)消声器:sound damper 声障:sound baffle, sound barrier隔声:sound insulation, soundproof隔声罩:acoustical enclosure声屏蔽:acoustic shielding隔声板:acoustic septum消声室:anechoic chamber消声器:muffler, silencer声扩散体:sound diffuser穿孔:perforation;穿孔板:perforated panel室内声学平均⾃由程换能,仪器设计,测量压电效应:piezoelectricity扬声器:louderspeaker;喇叭:horn 话筒,扩⾳器,麦克风:microphone。

ELT-400电磁场曝光级别测量器说明书

ELT-400电磁场曝光级别测量器说明书

Safety Evaluation Within a Magnetic Field EnvironmentDirect evaluation of field exposure incomparison with major standards andregulations such as Directive 2013/35/EU forworkplacesAutomatic exposure evaluation for variouswaveforms in compliance with Weighted RMSand Weighted Peak methodsEliminates the overestimation thatoccasionally occurs with FFT-based evaluationUltra wide frequency range(1 Hz to 400 kHz)Wide measurement range up to 80 mT(dependent on type)IEC/EN 62311 and 62233 standard compliantincluding isotropic 100 cm² and 3 cm² probeThree-axis analog signal outputExposure Level Tester ELT-400t a b l i s h e d1981NSTS 0714-E0205O 1 / 8Subject to change without noticeNSTS 0714-E0205O 2 / 8Subject to change without noticeAPPLICATIONSThe ELT-400 is an innovative exposure level meter for measuring magnetic fields in the workplace and in public spaces. The model is designed for health and safety professionals in industry, the insurance business and service industries.The instrument can simply and precisely handle practically any level measurement required in the low and medium-frequency range. It is comparable to the sound level meters that are commonly used in the assessment of noise at the workplace.Production AreasThe ELT-400 is useful for checking fields caused by various manufacturing plant, including induction heating, melting and hardening equipment. Thanks to its extremely low frequency limit and high power capability, it can also be used to check most magnetic stirrers.Special demands often occur with machinery in production areas where non-sinusoidal signals are common, e.g. in industrial applications that use resistance welding machinery (pulse waveform, phase angle control) with traditional 50/60 Hz systems, as well as in newer medium-frequency switching units.General EnvironmentThe different types of electronic article surveillance systems generate complex fields in public spaces. Most electromagnetic and magneto acoustic gates operate within the frequency range of the ELT-400.EMC Test HouseThe magnetic fields generated by household appliances or other electrical devices have become the focus of increased attention. Some new standards such as IEC/EN 62233 describe how to investigate such products. The ELT-400 is the ideal measuring device when it comes to compliance with these standards. Benefits include the perfectly matched frequency range and implementation of the specified transfer function.The ELT-400 allows to greatly simplify the assessment process. With EXPOSURE STD (Shaped Time Domain) mode, the instrument achieves a new standard in simple but reliable measurement of magnetic fields, whether in straightforward or in very complex field environments. Industrial melting furnaceResistance welding machinery in operation Magneto acoustic gate used for product surveillanceNSTS 0714-E0205O 3 / 8Subject to change without noticeThe easily misinterpreted time-consuming measurements with aspectrum analyzer or scope are rendered obsolete. Detailed knowledgeabout the evaluation procedure or the field waveform or frequency is nolonger needed. The results are reliable, and speed and ease of use aresignificantly better than all traditional methods.BASIC OPERATIONThe ELT-400 covers the wide frequency range of 1 Hz to 400 kHz. Themeasurement range of the ELT-400 is far wider than the reference limitsof common guidelines. The instrument has an external isotropicmagnetic field probe with a 100 cm2cross-sectional area. This issuitable for standards-compliant measurement even in non-homogeneous fields. The ELT-400 has a rugged housing and is easy tooperate using only six buttons. The measurement result and theinstrument settings are clearly displayed on a backlit LCD panel.The optional probe extension cable is specially designed for lowinfluence on the frequency response and sensitivity of the instrument.The cable is a good choice in cases where the probe and instrumentmust be handled separately. Variants of the ELT-400 are available withdifferent operating mode combinations, e.g. “Exposure STD” or “FieldStrength”. Please refer to the Ordering Information section for details.EXPOSURE STD (SHAPED TIME DOMAIN) MODESignal-Shaped-Independent Field EvaluationIn EXPOSURE STD mode, the level of the magnetic (B) field is directlydisplayed as a “Percent of Standard” regardless of the signal shape andfrequency. The numeric result clearly reflects the current situation andthe remaining safety margin. The method employed can be compared tosound level meters that are commonly used to determine noise in theworkplace.The variation with frequency specified in the standard is normalized bymeans of an appropriate filter. Users no longer need to know thefrequency or the frequency-dependent limits. The standard is easilyselected by pressing just one button. Multi-frequency signals are just aseasy to measure as single frequencies.Compliance testing of household appliancesCoupling factors can be determined in compliancewith IEC/EN 62233 by use of the optional 3 cm2 probeNSTS 0714-E0205O 4 / 8Subject to change without noticeThe newer safety standards and guidelines also specify waveform-specific evaluation procedures. For example, stationary sinusoidal and pulsed fields are differentiated. With the ELT-400 the waveform is automatically taken into account. Users no longer need any knowledge about the waveform or the duty cycle. Measurements on pulsed signals are also possible. Different evaluation patterns are occasionally specified in the standard for certain pulse waveforms. These patterns (valid for all imaginable waveforms) are directly handled by EXPOSURE STD mode. This completely eliminates the need to analyze the waveform in the time domain using a scope.Even when faced with pulses that include DC fields, the EXPOSURE STD method provides valuable results. The ELT-400 covers all the signal components down to 1 Hz that are relevant in assessing such a situation.Occasionally both the RMS value and the peak value are critical for assessing exposure in the low-frequency range. Both detector types are provided (Weighted RMS and Weighted Peak), and are simultaneously activated in the default setting. Depending on the incoming signal and standard selected, the most suitable detector is automatically employed at all times. The necessary weighting factors are also taken into account. The detectors may also be selected independently for further interpretation of the signal.Detailed knowledge of the field, the test equipment and other auxiliary conditions is necessary to obtain insight into the degree of exposure when using traditional analysis instruments. The exposure level is derived through extensive calculation. Results can be easily misinterpreted or other problems may occur. For example, FFT spectrum analysis tends to overestimate results for the ICNIRP standard. The ELT-400 continuously monitors the field, and the results are constantly updated. Any change in the field, e.g. due to a power reduction, can be evaluated immediately.Proper evaluation in a personal safety context is achieved quickly and reliably using the STD technique. In Exposure STD mode the result is displayed directly as a percentage of the permitted limitExposure STD automatically sets the prescribeddetector applicable for the selected standardNSTS 0714-E0205O 5 / 8 Subject to change without noticeFIELD STRENGTH MODEBroadband Field Strength MeasurementsIf the field under test is essentially a single frequency component, broadband mode is also a good choice.The ELT-400 provides an ultra wideband, flat frequency response. The measurement range can handle extremely high field strength levels. Both detectors, RMS and Peak, are available for broadband measurement. The field strength result is displayed in “Tesla”.ACTIVE FIELD PROBEThree-Axis Analog Signal OutputFor scientific studies or advanced signal-shape / frequency analysis, a scope or an FFT analyzer can be connected to the analog output. The output signal ensures proper phase within the three axes and covers the full bandwidth of the instrument.The buffered output provides an adequate voltage swing to allow forsimple operation.Broadband measurement in “mT”with RMS detectorThe oscilloscope display shows the welding current when using the analog signal output of ELT-400aa Unless otherwise stated, these specifications apply fort the reference condition: ambient temperature 23±3 °C,relative air humidity 40 % to 60 %, continuous wave signal (CW) and RMS detectionb Depends on type; see Ordering Informationc Detection: Automatic according to selected standard, for IEC/EN 62233 based on ICNIRP limit valuesd Includes flatness, isotropy, absolute and linearity variations (frequency range: 1 Hz to 400 kHz or 10 Hz to 400 kHz).The uncertainty increases at the frequency band limits to ±1 dB based on the nominal frequency response.e For Frequency Range 10 Hz to 400 kHz and 30 Hz to 400 kHz only.NSTS 0714-E0205O 6 / 8Subject to change without noticea Unless otherwise stated, these specifications apply for the reference condition: ambient temperature 23±3 °C,relative air humidity 40 % to 60 %, continuous wave signal (CW) and RMS detectionb Depends on type, see Ordering Informationc Detection: Automatic according to selected standard, for IEC 62233 based on ICNIRP limit valuesd Includes flatness, isotropy, absolute and linearity variations (frequency range: 1 Hz to 400 kHz or 10 Hz to 400 kHz).The uncertainty increases at the frequency band limits to ±1 dB based on the nominal frequency response.e For frequency range 10 Hz to 400 kHz and 30 Hz to 400 kHz only.NSTS 0714-E0205O 7 / 8Subject to change without noticeNSTS 0714-E0205O 8 / 8 Subject to change without notice® Names and Logo are registered trademarks of Narda Safety Test Solutions GmbH and L3 Communications Holdings, Inc. – Trade names are trademarks of the owners.Narda Safety Test Solutions GmbH Sandwiesenstrasse 772793 Pfullingen, Germany Phone: +49 7121 9732 0 Fax: +49 7121 9732 790E-Mail:*************************** Narda Safety Test Solutions 435 Moreland RoadHauppauge, NY 11788, USA Phone: +1 631 231-1700 Fax: +1 631 231-1711E-Mail:*******************Narda Safety Test Solutions Srl Via Leonardo da Vinci, 21/23 20090 Segrate (Milano) - Italy Phone: +39 02 2699871 Fax: +39 02 26998700E-mail:**************************www.narda-sts.it。

流固耦合声学分析介绍

流固耦合声学分析介绍

Strongly coupled modes
©INTES GmbH, 2013, Stuttgart, Germany
VPW Swiss Workshop Acoustic Simulation 12. Sept. 2013
Seite 11
Dynamic Condensation
There are two available options for dynamic condensation of coupled fluids and structures: • ‘Wetted‘ Condensation - Separate calculation of fluid modes and structural modes in different substructures. The external modes are displacement modes and pressure modes. - The final solution step is a coupled vibration analysis. • ‘Dry’ Condensation - In the substructures, a coupled eigenvalue problem is solved, i.e. the fluid part will be isolated. The external modes are coupled modes (without pressure dof). - The final solution step is a structural vibration analysis, because no pressure dof exist any more. - Facilitates the use of acoustic components in larger structural components (but the possibility remains to calculate pressure of the condensed fluid).

NVH基础

NVH基础
EXCITATION SOURCES
Inherent Excitations (General Road Spectrum, Reciprocating Unbalance, Gas Torque, etc.) Process Variation Excitations (Engine, Driveline, Accessory, Wheel/Tire Unbalances)
Introduction to NVH Analysis NVH分析介绍
NVH - 7
Copyright © 2012 Altair Engineering, Inc. Proprietary and Confidential. All rights reserved.
NVH Analysis
Analysis Capability
NVH - 9
Copyright © 2012 Altair Engineering, Inc. Proprietary and Confidential. All rights reserved.
Automotive Frequency Ranges
汽车频率范围
Spectral Content of Noise Sources 噪声源谱
Low frequency (low modal density) – work on modes
低频(低模态密度)-针对模态做工作 • modal alignment 模态分布表
• nodal mounting
节点布置
• dynamic absorbers 动态吸振器 Mid to high frequency (high modal density) – work on paths

语言学重点

语言学重点

语言学重点选择题10个,填空题5个,术语翻译5个,判断对错10个,名词解释,并给例子!树形图。

1语言学LinguisticsLinguistics is generally defined as the scientific study of language.Language and parole 语言和言语The Swiss linguist F. de Saussure made the distinction between langue and parole early 20th century.Competence and performance 语言能力和语言运用Proposed by American linguist N. Chomsky in the late 1950’s.什么是语言学?Linguistics is generally defined as the scientific study of language. It studies not any particular language, but languages in general.Design features of languageIt was proposed by Charles Hochett in 1960.1,arbitariness 任意性,2 productivity 创造性 3 duality 双重性4 displacement 移位性 5 cultural transmission 文化传承性Functions of language : descriptive , expressive and social function.Jakobson six elements of speech are: addresser - emotive, addressee- conative, context-referential, message-poetic, contact- phatic communication, code-metalinguistic.M.A.K.Halliday in 1970 found child system contains the ideational.interpersonal. Textua.2 ,phonology 音位学Phonetics is defined as the study of the phonic medium oflanguage. And it has three branches: articulatory phonetics 发音语言学, auditory phonetics 听觉学,acoustic phonetics 声学。

罗兰 ME-80 吉他多效器说明书

罗兰 ME-80 吉他多效器说明书

Mobile, battery powered, and filled with a diverseselection of flagship-quality BOSS COSM ampsand effects, the ME-80 is the ideal compact toneprocessor for performing guitarists. A friendlyknob-based interface makes it simple to dial ingreat sounds in seconds, while easily selectableoperation modes offer the flexibility of individualstompbox-style on/off or instant recall of complexmulti-effects setups. Unique new footswitchesdeliver twice the control of previous designs forefficient and intuitive effects switching, patch selection, and real-time sound shaping whileplaying on stage. The free BOSS TONE STUDIO software unlocks even more tonal possibilities,providing a cool graphical interface for tweakingand organizing sounds on your computer, plus aweb connection to BOSS TONE CENTRAL for directaccess to free gig-ready patches created by toppro guitarists and much more.Hands-On Access to a World of Great Tones ■Compact and powerful floor multi-effects with a simple knob-based interface■Eight simultaneous effects categories, each with multiple effects types■Dial up tones with the ease of using your favorite stompboxes■Includes a massive selection of top-quality effects, from classic BOSS stomps to the latest MDP effects■Updated flagship-level COSM amps derived from the GT-100■Eight multifunction footswitches and expression pedal■Manual mode for stompbox-style on/off; Memory mode for switching complete patch setups■Delay section includes Phrase Loop function with 38 seconds of recording■Runs on six AA batteries or optional PSA-series AC adaptor■USB audio/MIDI interface built in■Free BOSS TONE STUDIO software allows you to edit and organize tones on your computer, and also preview and downloadfree patches directly from the BOSS TONE CENTRAL websiteA Huge Selection of BOSS Effects in One PedalNo matter what style you play, it’s easy to craft your own personal sound with the ME-80’s wide range ofbuilt-in effects. A complete history of gig-ready BOSS tone processing is at your command, from multiple overdrives and distortions to wahs, mod effects, pitch shifters, delays, and beyond. BOSS’ groundbreaking Multi Dimensional Processing (MDP) technology is represented with the unique, spacious ambience of Tera Echo and thedistinctive tone-shaping possibilities of Overtone. Updated COSM preamps include new additions such as Crunch and Metal, plus an AC preamp designed for acoustic/electric guitar. The onboard expression pedal can be used for foot volume and pedal effects like wah, octave shift, and Freeze, and it’s also possible to control effects parameters such as mod rate, delay oscillation, and more for expressive real-time sound shaping.Instant Gratification with Dedicated KnobsUnlike typical menu-driven multi-effects processors that arecomplicated and unintuitive, using the ME-80 is as easy asusing a stompbox. Effects are organized into eight logicalcategories that can all be active at the same time. Sevencategories contain multiple effects types to choose from, plusdedicated knobs for selecting a type and adjusting it with aset of parameters you’d find in the pedal version of the effect.The Pedal FX category has its own knob for quickly assigninga particular effects type or function to be controlled by footwith the expression pedal. With this familiar and friendlyinterface, you’re able to dial up and play great tones instantly,just like using a large pedalboard filled with your favoritestomps. But a major advantage over that pedalboard is thatyou can to save all the current knob settings to one of theME-80’s 36 user patch locations, allowing you to recall customeffects configurations at the touch of a pedal.Stompbox Immediacy or Multi-FX Power: You DecideThe hands-on experience that stompbox control provides is perfect for tweaking tones as you go. However, there are times when switching among an entire group of preset effects is more efficient, such as when you’ve set up complex tones for different songs. The flexible ME-80 supports either approach, giving you the best of worlds. In Manual mode, the categories function like individual stomp effects, with instant adjustment via the panel knobs and on/off control with dedicated footswitches. By entering Memory mode, seven footswitches are automatically reconfigured to select user or preset patches and patch banks, letting you recall complete multi-effects setups directly. One footswitch on the ME-80 is dedicated just for mode switching, so you can toggle between Manual and Memory modes any time you want, even in the middle of a song.New Footswitch Design Delivers Twice the ControlThe ME-80 offers easy usability while performing, witheight multifunction footswitches for direct control ofeffects on/off, bank/patch selection, and mode switching,plus convenient access to alternate functions such as taptempo, tuner, looper control, and more. A special control(CTL) function is also assignable in each patch, lettingyou toggle grouped effects on/off or adjust a specifiedparameter in real time. The newly developed footswitchstyle provides two switches in the space occupied by onein previous designs, allowing BOSS to equip the ME-80 witha generous array of foot-operated controls while keepingthe unit extremely compact and mobile. In addition to theeight main footswitches, the expression pedal is equippedwith an integrated toe switch that toggles between footvolume and the current Pedal FX setting.USB Audio/MIDI Interface Built InVia USB, you can connect to your computer and capture the output of the ME-80 directly into your favorite DAWto record pro tones with COSM preamps and effects. It’s also possible to monitor the ME-80’s effects sound while recording an unprocessed signal into a DAW track; after the fact, use the USB Loopback function to “re-amp” the dry track with the ME-80, tweaking the knobs as you listen to the song to capture the perfect tone. MIDI transfer over USB is also supported, allowing you to select ME-80 patches from your computer, send expression and control pedal data into your software, and swap patches via BOSS TONE STUDIO.Edit and Organize Tones and Connect to the Webwith BOSS TONE STUDIOAvailable as a free download, the BOSS TONE STUDIO application provides an inviting graphical interface for tweaking the ME-80’s effects from your Mac or Windows computer through USB. The software makes it easy to save, edit, and organize your patches, and to load them into the ME-80 as needed for different gigs and other applications. If your computer has Internet access, BOSS TONE STUDIO also provides an integrated connection to the BOSS TONE CENTRAL website, allowing you to preview and download gig-ready patches created by top guitar pros directly into your ME-80! In addition to expanding your palette of tones, these free patches provide solid foundations for creating your own patches with the ME-80’s extensive array of effects.BOSS TONE CENTRAL: Your Web Home for Free Patches, Instructional Vids, Artist Tips, and MoreBOSS TONE CENTRAL is the ultimate destination for all players that use BOSS guitar and bass gear. The initial focus of this powerful new web portal is on the ME-80, but compact stomps and other BOSS multi-effects will be included as the site grows. Right now, you have access to lots of great ME-80 content, including demo videos and free patches created by famous guitarists, touring pros, and session players. Check back often for additional patches, how-to videos, artist interviews, and much more. If you love BOSS effects, BOSS TONE CENTRAL is the place to be!*Access 。

声学fr的工作原理

声学fr的工作原理

声学fr的工作原理声学频率响应分析(Acoustic Frequency Response Analysis)是一种用于评估结构在声波作用下的振动和声学性能的工程技术。

它的工作原理基于声学和振动学的基本原理。

1. 声波传播模型:在声学频率响应分析中,首先要理解声波在给定材料或结构中的传播方式。

声波是一种机械波,通过介质(如空气、水或固体)传播。

声波传播的速度和方向取决于介质的性质,例如密度、弹性模量和介质内部的结构。

2. 结构振动模态:结构的振动模态描述了结构在给定频率下的振动方式和形态。

在声学频率响应分析中,会考虑结构的固有振动模态,这些模态会受到声波激励而产生振动响应。

3. 声学边界条件:结构的边界条件和周围介质对声波的反射和传播起着重要作用。

在分析中,需要考虑结构与周围环境之间的声学耦合和边界条件,这些条件影响着声波在结构中的传播路径和振动响应。

4. 声学激励:声学频率响应分析通常会考虑外部声波对结构的激励,这可以是来自声源(如扬声器或引擎)的声压波。

声波通过结构传播时会引起结构的振动响应,这种响应可以通过振动传感器或声学传感器来检测和记录。

5. 有限元模拟:在现代工程中,常用有限元分析方法进行声学频率响应分析。

有限元模型将结构离散化为有限数量的元素,并通过求解结构的振动方程来预测结构在不同频率下的振动响应。

声学频率响应分析通常涉及求解结构的固有频率、振型和与外部声波的相互作用。

6. 结果解释:最终,声学频率响应分析会产生关于结构在不同频率下的振动和声学响应的数据。

这些数据可以用于评估结构的声学性能,识别潜在的振动问题或噪音源,并进行优化设计以改善结构的声学性能。

Acoustic transfer function simulating method and s

Acoustic transfer function simulating method and s

专利名称:Acoustic transfer function simulatingmethod and simulator using the same发明人:Haneda, Yoichi,Makino, Shoji,Kaneda, Yutaka申请号:EP92104921.9申请日:19920320公开号:EP0505949A1公开日:19920930专利内容由知识产权出版社提供专利附图:摘要:A plurality of acoustic transfer functions for a plurality of sets of different positions of a loudspeaker (49) and a microphone (50) in an acoustic system aremeasured by an acoustic transfer function measuring part. The plurality of measuredacoustic transfer functions are used to estimate poles of the acoustic system by a pole estimation part (51), and a fixed AR filter (52) is provided with the estimated poles as fixed values. A variable MA filter (53) is connected in series to the fixed AR filter and the acoustic transfer function of the acoustic system is simulated by the two filters. The filter coefficients of the variable MA filter are modified with a change in the acoustic transfer function of the acoustic system.申请人:NIPPON TELEGRAPH AND TELEPHONE CORPORATION地址:1-6 Uchisaiwaicho 1-chome Chiyoda-ku Tokyo JP国籍:JP代理机构:Hoffmann, Eckart, Dipl.-Ing.更多信息请下载全文后查看。

ACOUSTIC TRANSDUCER

ACOUSTIC TRANSDUCER

专利名称:ACOUSTIC TRANSDUCER发明人:YUUJI YAMADA,KOYURU OKIMOTO,YOSHIOOHASHI,TOSHIYUKI NAKAGAWA申请号:US15520453申请日:20150715公开号:US20170318373A1公开日:20171102专利内容由知识产权出版社提供专利附图:摘要:Provided is an acoustic transducer which is used by being fitted into an ear of a listener, is formed in a compact and lightweight shape, and preferably prevents re-reflection of a sound wave. An acoustic transducer is formed of a film-shaped materialhaving an expanding and contracting action and includes a cylindrical acoustic transducing element . The cylindrical acoustic transducing element also functions as a sound guide tube. The acoustic transducing element prevents re-reflection of the sound wave reflected by an eardrum when the sound wave has been generated and prevents localization phenomenon and a feeling of pressure in auditory sense. Also, since the acoustic transducing element is formed in a compact and lightweight shape, the acoustic transducing element generates the sound wave for directly reaching the eardrum or collects the sound at a place near the eardrum without a feeling of foreign materials in a case where a person wears the acoustic transducing element the an ear.申请人:SONY CORPORATION地址:TOKYO JP国籍:JP更多信息请下载全文后查看。

Simcenter Qsources 迷你振动激发器文档说明书

Simcenter Qsources 迷你振动激发器文档说明书

SummarySimcenter Qsources miniature shaker enables dynamic excitation when conventional shakers have no access and impact hammers are unpractical. This vibration exciter has an extremely low mass and stiffness loading of the test object due to its patented internal decoupling suspension.The miniature shaker is especially suitable for those who plan to perform experimental modal analysis (EMA), transfer path analysis (TPA) and/or frequency-based substructuring (FBS). The miniature shaker provides you with integrated force and acceleration transducers that allow you to quickly obtain driving point frequency response functions (FRFs).The shaker can be glued directly on the test structure, and needs no extra external support. Thanks to the patented internal suspension, the inert mass is dynamically decoupled from the test object and the force is always aligned along the internal stinger axis. This significantly improves the efficiency of testing by eliminating the support and alignment work associated with conventional shakertesting.Additionally, the data acquisition can be executed by only one operator.The miniature shaker can be used with Simcenter Testlab software Spectral Testing or MIMO FRF testing together with the Simcenter Qsources measurement amplifier. The integrated transducers are IEPE type sensors and are compatible with Simcenter SCADAS hardware input modules.To facilitate the long-term reliable use of the shaker, Siemens Digital Industries offers a sensitivity measurement service for the internal transducers, including a detailed performance check.Simcenter/Q-MSH/2/20200402BenefitsProvides self-suspending and selfaligning featureProvides excitation for any mounting angleCovers frequency range from 50 to 5,000 HzEnables internal excitation of assemblies and in hard-to-reach locationsFeaturesIntegrated 1D force sensorIntegrated driving point accelerometerPatented internal 3D suspension systemHigh output-to-size ratioPRODUCT PORTFOLIOApplicationsTransfer path analysisModal analysis (EMA)Attachment point mobility measurementsVibro-acoustic transfer functions (BNTF)Physical specificationsDimensions Ø 28mm X 38 mmTotal static mass: 100 gramsDynamic mass loading of the test structure: 10 gramsSensor connector type: female 10 to 32Power cable connector: male bananaSensor cable length: 90 centimeters (cm)Power cable length: 4 meters PerformanceFrequency range for random testing: 50 to 5,000 HzForce level: 2 Newton rmsInternal sensors type: IEPESupplied accessoriesUser manualSignal and power cablesDriving point accelerometerShaker mounting toolsCleaning toolElectronic protection deviceFlight caseCalibration sheets reference sensors Product requirementsSimcenter Qsources measurementamplifier [Q-AMP230V/Q-AMP115V]Simcenter bTM softwareMIMO FRF Testing, SpectralAcquisition or similarOptionsCalibration service [Q-SR-SENS]Simcenter Qsources structural andacoustic excitersLow-mid frequency volume source[Q-LMF]Mid-high frequency volume source[Q-MHF]High frequency shaker [Q-HSH]Miniature shaker [Q-MSH]Thumper shaker [Q-TMP]Low-frequency monopole source[Q-MED]Siemens Digital Industries Software/plmAmericas +1 314 264 8499Europe +44 (0) 1276 413200Asia-Pacific +852 2230 3333© 2020 Siemens. A list of relevant Siemens trademarks can befound here. Other trademarks belong to their respective owners.。

语言学概论练习题

语言学概论练习题

语言学概论练习题语言学概论练习题Ⅰ. MatchingMatch each of the following terms in Column A with one of the appropriate definitions in Column B.Column A1. displacement2. langue3. suprasegmental feature4. deep structure5. predication analysis6. idiolect7. pidgin8. mistakes9. interlanguage10. motivation11. arbitrariness12. competence13. broad transcription14. morphology15. category16. errors17. componential analysis18. context19. blending20. culture21. learning strategies22. selectional restrictions23. phrase structure rules24. culture diffusionColumn BA. Learners’ independent system of the second language, which is of neither the native languagenor the second language, but a continuum or approximation from his native language to the target language.B. Learner’s attitudes and affective state or learning drive, having a strong impact on his efforts nlearning a second language.C. The rules that specify the constituents of syntactic categories.D. Through communication, some elements of culture Aenter culture B and become part ofculture B.E. A personal dialect of an individual speaker that combines elements regarding regional, social,gender, and age variations.F. A special language variety that mixes or blends languages and it is used by people who speakdifferent languages for restricted purposes such as trading.G. The kind of analysis which involves the breaking down of predications into their constituents----- arguments and predicates.H. They refer to constraints on what lexical items can go with what others.I. The structure formed by the XP rule in accordance with the head’s subcategorizationproperties.J. The phonemic features that occur above the level of the segments.K. The study of the internal structure of words, and the rules that govern the rule of wordformation.L. The abstract linguistic system shared by all the members of a speech community.M. Language can be used to refer to contexts removed from the immediate situations of thespeaker. It is one of the distinctive features of human language.N. Learner’s conscious, goal-oriented and problem-solving based efforts to achieve learningefficiency.O. The total way of life of a people, including the patterns of belief, customs, objects, institutions,techniques, and language that characterizes the life of the human community.P. The common knowledge shared by both the speaker and hearer.Q. The way of word formation by which new words may be formed by combining parts of otherwordsR. A group of linguistic items which fulfill the same or similar functions in a particular language,such as a sentence, a noun phrase or a verb.S. A way proposed by the structural semanticists to analyze word meaning. This approachbelieves that the meaning of a word can be dissected into meaning components.T. The ideal user’s knowledge of the rules of his language.U. One of the properties of human language. It means that there is no logical connection betweenmeanings and sounds.V. A way to transcribe speech sounds with letter-symbols only.W. They reflect gaps in a learner’s knowledge of the target language, not self-corrigible.X. They reflect occasional lapses in performance.Ⅱ.Blank-filling.Fill in the following blanks with a word, whose initial letter has been given.1. “A rose by any other name would smell as sweet.” This quotation is a good illustration of thea____ nature of language.2. The description of a language at some point of time in history is a synchronic study; thedescription of a language as it changes through time is a d____ study.3. Chomsky defines c____ as the ideal user’s knowledge of the rules of his language, andperformance the actual realization of this knowledge in linguistic communication.4. In the production of vowels the air stream coming from the lungs meets with no o____. Thismarks the essential difference between vowels and consonants.5. The different phones that can represent a phoneme in different phonetic environments arecalled the a____ of the phoneme.6. Allophones of the same phoneme cannot occur in the same phonetic environment. They aresaid to be in c____ distribution.7. When pitch, stress and sound length are tied to the sentence rather than the word in isolation,they are collectively known as i____.8. The m____ unit of meaning is traditionally called morpheme.9. I____ morphemes are bound morphemes that are for the most part purely grammaticalmarkers, signifying such concepts as tense, number, case and so on.10. Phrases that are formed of more than one word usually contain three elements: head, specifier,and c____.11. Concerning the study of meaning, conceptualist view holds that there is no direct linkbetween a linguistic form and what it refers to; rather, in the interpretation of meaning they are linked through the mediation of c____ in the mind.12. The sense relation between “animal” and “dog” is called h____.13. P____ refers to the phenomenon that the same word may have a set of different meanings.14. What essentially distinguishes semantics and pragmatics is whether in the study of meaningthe c____ of use is taken into consideration.15. S____ refers to the linguistic variety characteristic of a particular social class.16. WHO is an a____ derived from the initials of “World Health Organization”.17. According to Halliday, language varies as its function varies; it differs in different situations.The type of language which is selected as appropriate to the type of situation is a r____.18. In cross-cultural communication, some elements of culture A enter culture B and become partof culture B, thus bringing about the phenomenon of cultural d____.19. While the first language is acquired s____, the second or foreign language is more commonlylearned consciously.20. Language a______ refers to a natural ability for learning a second language.21. ”, wh ich is afeature of all vowels and some consonants in English22. The phonemic features that occur above the level of the segment are called s____ features.23. Morphology refers to the study of the internal structure of words and rules for word f____.24. The minimal unit of meaning is traditionally called m____.25. The sense relation between “autumn” and “fall” is called s____.26. H____ refers to the phenomenon that words having different meanings have the same form,i.e. , different words are identical in sound or spelling, or in both.27. In daily communication, people do not always observe the four maxims of the co-operativeprinciple. Conversational i____ would arise when the maxims are flouted.28. SARS is an a____ derived from the initials of “Severe Acute Respiratory Syndrome”.29. I____ is a personal dialect of an individual speaker that combines elements regardingregional, social, gender, and age variations.30. RP, the short form of “R____ Pronunciation” refers to the particular way of pronouncingstandard English.31. B____ refers to the situation that in some speech communities two languages are used sideby side with each having a different role to play.32. A: Where does Gér ard live? B: Somewhere in the South of France. B’s answer violates the33. Traditional behaviorists view language as behavior and believe that language learning issimply a matter of i____ and habit formation.34. I____ refers to learners’ inde pendent system of the second language, which is of neither thenative language nor the second language, but a continuum or approximation from his native language to the target language.35. M_____ can be defined as the learner’s attitudes and affective state or learning drive, havinga strong impact on his efforts n learning a second language.36. By saying language is p__________, we mean that every language contains an infinitenumber of sentences, which however, are generated by a small set of rules and a finite set of words.37. D_______affixes create new words and very often cause a change in grammatical class.38. restrictions constraints on what lexical item can go with others.39. reflect gaps in a learner’s knowledge of the target language, not self-corrigible.40. .41. 42. are committing the speaker himself to some future course of action.43. Meat originally meant “food” but now refers to “edible part of an animal”, this is an examplemeaning. of 44. 45. absent as easily as about things that are present.46. 47. The word “unreliability” consists 48. 49. C strategies involved in analyzing, synthesis, and internalizing what has been learned50. in words like bean, green, team, and scream. This is because in allthese sound combinations the [i:] sound is followed by a nasal [n] or [m].51. A act is the act of uttering words, phrases, clauses. It is the act of conveying literalmeaning by means of syntax, lexicon and phonology.52. There are two versions of CPH. While the strong one suggests that children must acquireor they will never be able to learn from subsequent exposure.53. 54. of discourse to a great extent determines the level of formality and the level oftechnicality of the language we use.55. suggest failure in performance.Ⅲ.Multiple choice.Choose the best answer to the following items.1. ____ is considered to be the father of modern linguistics.A. N. ChomskyB. F. de SaussureC. Leonard BloomfieldD. M. A. K. Halliday2. In the scope of linguistics, ____ form the part of language which links together the soundpattern and meaning.A. morphology and syntaxB. phonetics and semanticsC. semantics and syntaxD. morphology and semantics3. ____ studies the sounds from the hearer’s point of view, i.e., how the sounds are perceived bythe hearer.A. auditory phoneticsB. acoustic phoneticsC. articulatory phonetics4. Which of the following words begins with a velar voicedstop? ____A. godB. bossC. cockD. dog5. Which of the following words ends with a dental, voiceless fricative? ____A. roseB. waveC. clothD. massage6. Which of the following words contains a back, open and unrounded vowel? ____A. godB. bootC. walkD. task7. Which of the following is Not a velar sound? _____A. [h]B. [k]C. [g]D. [ ]8. Which of the following is Not a minimal pair?____A. bat, biteB. kill, pillC. peak, pig,D. meat, seat9. Which of the following is an open class word?____A. emailB. butC. theD. they10. The underlined morphemes in the following belong to the inflectional morphemes except____. 11. Which of the following words has more than three morphemes? ____A. psychophysicsB. boyfriendsC. forefatherD. undesirability12. The pair of words “dead and alive” is called ____.A. gradable antonymsB. relational oppositesC.complementary antonyms13. Which pair of the following words can be categorized as stylistic synonyms?____A. torch flashlightB. die deceaseC. amaze astoundD. luggage baggage14. X: John has given up smoking.Y: John used to smoke.The sense relation between the above sentences is ____A. X entails YB. X presupposes YC. X is synonymous with YD. X is inconsistent with Y15. X: My father has been to London.Y: My father has been to UK.The sense relation between the above sentences is ____A. X entails YB. X presupposes YC. X is synonymous with YD. X is inconsistent with Y16. When we violate any of the maxims of Co-operative Principle, our language might become____.A. impoliteB. incorrectC. indirectD. unclear17. According to Searl’s classifica tion of speech acts, which of the following is an instance ofdirectives? ____A. I fire you!B. Your money or your life!C. I’m sorry for the mess I have made.D. I have never seen the man before.18. Which of the following words is entirely arbitrary?A. treeB. crashC. typewriterD. bang19. The word “Kodak” is a(n) ____.A. blendB. coined wordC. clipped wordD. acronym20. 19 Which of the following words is Not formed by means of clipping?_____A. memoB. motelC. quakeD. gym21. According to Halliday, mode of discourse refers to the _____ of communication.A. subjectB. roleC. situationD. means22. Which of the following theories of language acquisition believes that language learning issimply a matter of imitation and habit formation? ____.A. The behaviorist viewB. The innatist viewC. The interactionist viewD. The cognitive theory23. Which of the following sentences is an example ofovergeneralization? ____.A. Jane told me to give up smoking.B. Jane asked me to give up smoking.C. Jane advised me to give up smoking.D. Jane suggested me to give up smoking.24. Which of the following hypotheses is put forth by Dr. Krashen? ____.A. Critical Period HypothesisB. Input HypothesisC. Language Acquisition Device HypothesisD. Sapir-Whorf Hypothesis25. Who among the following linguists put forward Co-operative Principles?A. Paul GriceB. John SearleC. KrashenD. Leech26. Which of the following linguists is the initiator of transformational generative grammar?A. F. de SaussureB. N. ChomskyC. G. LeechD. M. A. K. Halliday27. When a ______ comes to be adopted by a population as its primary language and childrenB. A. creole... pidgin B. pidgin... creoleC. C. regional dialect... sociolectD. sociolect ... regionaldialect28. ____ studies the sounds from the speaker’s point of view,i.e., how a speaker uses his speechorgans to articulate speech sounds.A. Auditory phoneticsB. Acoustic phoneticsC. Articulatory phonetics29. We know the verb “put” requires an NP followed by a PP or Adv. Thus, the process of puttingwords of the same lexical category into smaller classes according to their syntactic characteristic is A. categorization B. subcategorizationC. syntactic categoriesD. coordination30. Which of the following words contains a front, close and unrounded vowel? ____A. badB. bedC. beatD. but31. The underlined morphemes in the following belong to the derivational morphemes except____.32. Which of the following is an open class words?____A. emailB. butC. theD. they33. The pair of words “borrow and lend” is called ____.A. gradable antonymsB. relational oppositesC. complementary antonyms34. Which pair of the following words can be categorized as collocational synonyms?____A. torch flashlightB. pretty handsomeC. amaze astoundD. luggage baggage35. X: My sister will soon be divorced.Y: My sister is a married woman.The sense relation between the above sentences is ____A. X entails YB. X presupposes YC. X is synonymous with YD. X is inconsistent with Y36. X: John married a blond heiress.Y: John married a blond.The sentence relation between X and Y is ____A. X entails YB. X presupposes YC. X is synonymous with YD. X is contradictory with Y37. According to Searl’s classification of speech acts, which of the following is Not an instanceof directives? ____A. Open the window!B. Your money or your life!C. Would you like to go to the picnic with us?D. I have never seen the man before.38. The word “brunch” is a(n) ____.A. blendB. coined wordC. clipped wordD. acronym39. According to Halliday, field of discourse refers to the _____ of communication.A. subjectB. roleC. situationD. means40. There are different types of affixes or morphemes. The affix “ed" in the word "learned" isknown as a( n)A. derivational morphemeB. free morphemeC. inflectional morphemeD. free form41. Which of the following theories of language acquisition holds that human beings arebiologically programmed for language and that the language develops in the child just as other biological functions such as walking? ____.A. The behaviorist viewB. The innatist viewC. The interactionist viewD. The cognitive theory42. Which of the following hypotheses is put forward by Eric Lenneberg? ____.A. Critical Period HypothesisB. Input HypothesisC. Language Acquisition Device HypothesisD. Sapir-Whorf Hypothesis43. Morphemes that represent tense, number, gender and case are called morpheme.A. inflectional B .free C. bound D. derivational44. There are ____ morphemes in the word denationalization?A. threeB. fourC. fiveD. six45. LanguageA. instinctiveB. non-instinctiveC. staticD. genetically transmitted46. Pitch variation is known as ____ when its patterns are imposed on sentences.A. intonationB. toneC. pronunciationD. voice47. Which one is different from the others according to manners of articulation?A. [z]B.[h]C.[r]D.[v]48. Which one is different from the others according toplaces of articulation?A. [n]B. [m]C. [b]D. [p]49. Which vowel is different from the others according to the characteristics of vowels?A. [i:]B. [u]C. [e]A. D. [i] 50. What kind of sounds can we make when the vocal cords are vibrating? VoicelessB. VoicedC. Glottal stopD. Consonant51. When a child uses “mummy” to refer to any woman, most probably his “mummy” A. + Human B. + Human + AdultC. + Human + Adult C MaleD. + Human + Adult - Male + Parent52. The utterance "We're already working 25 hours a day, eight days a week." obviously violatesthe maxim of ______.A. qualityB. quantityC. relationD. manner53. The pair of words “north” and “south” is ___.A. gradable oppositesB. relational oppositesC. co-hyponymsD. synonyms54. Which of the following sentences is NOT an example of cross-association?A. other / anotherB. much / manyC. stalagmite / stalagtiteD. bow / bow55. describes whether a proposition is true or false.A. TruthB. Truth valueC. Truth conditionD. Falsehood56. "John sent Mary a post card." is a case ofA. one-place predicationB. two-place predicationC. three-place predicationD. no-place predication57. "John killed Bill but Bill didn't die" is a( n)A. entailmentB. presuppositionC. anomalyD. contradiction58. refers to the process whereby a word is shortened without a change in the meaningand in the part of speech.A. BlendingB. Back-formationC. ClippingD. Conversion59. Which of the following aspects is NOT the core of the study of general linguistics?A. soundB. structureC. meaningD. application60. Many Chinese learners of English use although and but in the same sentence. This is aninstance A. transfer B. interference C. overgeneralization D. cross-association61. If the sounds appear in the same environment, and the substitution of one another result in.A. free variationsB. allophonesC. phonemesD. speech sounds62. A. push / pull B. buy / sell C. employer / employee D. pass / fail63. Please tell which of the following semantic relations is held within a sentence.A. presuppositionB. entailmentC. inconsistencyD. contradiction64. Which kind of morphological process does the following words: desks, easier, worked, John’sillustrate?A. derivationB. inflectionC. compoundingD. affixation65. Which of the followings is NOT an analysis of learners’ language?A. contrastive analysisB. error analysisC. predication analysisD. interlanguage66. Bull: [+BOVINE], [+MALE], [+ADULT] is an example of A. componential analysis B. predication analysisC. compositionalityD. selection restriction67. The semantic triangle holds that the meaning of a wordA. is interpreted through the mediation of concept.B. is related to the thing it refers to.C. is the idea associated with that word in the minds of speakers.D. is the image it is represented in the mind.Ⅳ.True of false judgment.Judge whether the following statements are true or false. Write T in the corresponding bracket for a true statement and F for a false one.1. Linguistics studies languages in general, but not any particular language, e.g. English,Chinese, Arabic, and Latin, etc.2. Modern linguistics regards the written language as the natural or primary medium of humanlanguage.3. In narrow transcription, we transcribe the speech sounds with letter-symbols only while inbroad transcription we transcribe the speech sounds with letter-symbols together with the diacritics.4. By diachronic study we mean to study the changes and development of language.5. Complete homonyms are often brought into being by coincidence.6. Of the three phonetics branches, the longest established one, and until recently the mosthighly developed, is acoustic phonetics.7. The meaning of the word “seal” in the sentence “the seal could not be found” cannot bedetermined unless the context in which the sentence occurs is restored.8. An Innatist view of language acquisition holds that human beings are biologicallyprogrammed for language.9. According to co-operative principle, the conversational participants have to strictly observethe four maxims, so that the conversation can go on successfully.10. The same word may stir up different association in people under different culturalbackground.11. A child who enters a foreign language speech community by the age of three or four can learnthe new language without the trace of an accent.12. In communication it will never be the case that what is grammatical is not acceptable, andwhat is ungrammatical may not be inappropriate.13. Modern linguistics is mostly descriptive.14. Since there is no logical connection between meanings and sounds, language is absolutelyarbitrary.15. Vowels may be distinguished as front, central and back according to the manner ofarticulation.16. Applied linguistics is the application of linguistic principles and theories to language teachingand learning.17. A phonological feature of the English compounds is that the stress of the word always falls onthe first element, and the second element receives secondary stress.18. All the affixes belong to bound morphemes.19. A polysemic word is the result of the evolution of the primary meaning of the word.20. According to the innatist view of language acquisition, only when the language is modifiedand adjusted to the level of children’s comprehension, do they process and internalize the language items.21. When a child acquires his mother tongue, he also acquires a language-specific culture andbecomes socialized in certain ways.22. According to Austin, the performative utterance is used to perform an action, it also has truthvalue.23. Children can learn their native language well whenever they start and whatever kinds oflanguage samples they receive.24. Duality is one of the characteristics of human language. It refers to the fact that language hastwo levels of structures: the system of sounds and the system of meanings.25. Linguistic forms having the same sense may have different references in different situationswhile linguistic forms with the same reference always have the same sense.26. Fore as in foretell is both a prefix and a bound morpheme.27. We can always tell by the words a compound contains what it means because the meaning of acompound is always the sum of the meanings of its parts.28. The meaning of an utterance is, in a sense, richer than the meaning of the sentence fromwhich it is derived.29. People in the west tend to verbalize their gratitude and compliments more than Chinesespeakers and they tend to accept thanks and compliments more than we Chinese do.Ⅴ.Give a short answer to each of the following questions.Explain “arbitrariness” as one of the design features of human language.Explain “displacement” as one of the design features of human language.What does “productivity” mean as one of the design features of human language?What is a minimal pair?What is a phoneme?Illustrate assimilation rule.Illustrate briefly componential analysis.Illustrate predication analysis with an example.What is context?What is idiolect?What is sociolect?What situation does bilingualism refer to?What is culture?Illustrate “overgeneralization” in second language acquisition.What does Critical Period Hypothesis proclaim?Explain Input Hypothesis by Krashen.Ⅵ. Essay question.Illustrate with examples how “sense” and “reference” differ from each other in lexical semantics. And how are they related to each other?Analyze the conversation below in light of the theory of Cooperative Principle by Paul Grice. Give an account of the conversation in light of the new model of speech act theory by Austin.。

  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
Degree
Master of Engineering
Department
Mechanical Engineering
Advisory Committee
Advisor Name
Title
Robert L. West, Advisor
Committee Chair
Uri Vandsburger,
Committee Member
The second stage of the research involved incorporating the flame into the FE model and has been referred to in this thesis as hot-acoustic modeling. The hot-acoustic model also required the investigation and characterization of the flame as an acoustic source. The detailed mathematical development for the full reacting acoustic wave equation was investigated and simplified sufficiently to identify the appropriate source term for the flame. It was determined that the flame could be represented in the finite element formulation as a volumetric acceleration, provided that the flame region is small compared to acoustic wavelengths. For premixed gas turbine combustor flames, this approximation of a small flame region is generally a reasonable assumption.
restricted
Abstract
Acoustic Transfer Functions Derived from Finite Element Modeling for Thermoacoustic Stability Predictions of Gas Turbine Engines
Design and prediction of thermoacoustic instabilities is a major challenge in aerospace propulsion and the operation of power generating gas turbine engines. This is a complex problem in which multiple physical systems couple together. Traditionally, thermoacoustic models can be reduced to dominant physics which depend only on flame dynamics and acoustics. This is the general approach adopted in this research. The primary objective of this thesis is to describe how to obtain acoustic transfer functions using finite element modeling. These acoustic transfer functions can be coupled with flame transfer functions and other dynamics to predict the thermoacoustic stability of gas turbine engines. Results of this research effort can go beyond the prediction of instability and potentially can be used as a tool in the design stage. Consequently, through the use of these modeling tools, better gas turbine engine designs can be developed, enabling expanded operating conditions and efficiencies.
This thesis presents the finite element (FE) methodology used to develop the acoustic transfer functions of the Combustion System Dynamics Laboratory (CSDL) gaseous combustor to support modeling and prediction of thermoacoustic instabilities. In this research, several different areas of the acoustic modeling were addressed to develop a representative acoustics model of the hot CSDL gaseous combustor. The first area was the development and validation of the cold acoustic finite element model. A large part of this development entailed finding simple but accurate means for representing complex geometries and boundary conditions. The cold-acoustic model of the laboratory combustor was refined and validated with the experimental data taken on the combustion rig.
Type of Document
Master's Thesis
Author
Black, Paul Randall
Author's Email Address
prb29@
URN
etd-07122007-2232fer Functions Derived from Finite Element Modeling for Thermoacoustic Stability Predictions of Gas Turbine Engines
Both the high temperature effects and the flame as an acoustic source were implemented to obtain a final hot-acoustic FE model. This model was compared to experimental data where the heat release of the flame was measured along with the acoustic quantities of pressure and velocity. Using these measurements, the hot-acoustic FE model was validated and found to correlate with the experimental data very well.
William Baumann,
Committee Member
Keywords
finite element
combustor
thermoacoustic instability
Acoustics
transfer function
Date of Defense
2007-05-07
Availability
The thesis concludes with a discussion of how these techniques can be utilized in large industrial-size combustors. Insights into stability are also discussed. A conclusion is then presented with the key results from this research and some suggestions for future work.
相关文档
最新文档