FSP250-60GRE中文资料

合集下载

中国脑成像联盟首批临床科研型功能磁共振成像数据采集标准介绍

二、标准化参数的比较与测试
• 信噪比与成像线圈 • 多中心数据一致性验证－任务态fMRI • 多中心参数验证
信噪比与成像线圈
• 不同成像线圈比较 • BOLD图像信噪比 • DTI图像信噪比
不同成像线圈比较
MR 750
Prisma
BOLD图像信噪比
Noise
信噪比测量示意图
Noise
123 - 155 mm 136.96± 5.03 mm
磁共振多模态标准化扫描参数
• T1(3D)扫描参数 • BOLD扫描参数 • DTI扫描参数 • 场图(field map)扫描参数 • T2(3D)扫描参数
T1(3D)高分辨率结构像
T1(3D)扫描参数
Scanner Sequence FOV (mm2) SliceThickness (mm) Gap (mm) SliceNum. TR (ms) TE (ms)
TR (ms) TE (ms) Phase partial Fourier Matrix PhaseDir. iPAT/Aset b0 Num. b (s/mm2) b Num. BandWidth VoxelSize (mm3)
Coil TA
Prisma
8000 64 6/8
2/24 10 64 2030 Hz/px 64CH/20CH 10m18s
Coil Scans
TA
Prisma
MR 750
2368 Hz/px 250 KHz
64CH/20CH 8CH/32CH
8m6s
8m
Ingenia
Trio Tim
224 × 224
3.5
0.7
33
Interleaved

IRFP250中文资料

1/8Sep 2000IRFP250N-CHANNEL 200V - 0.073Ω - 33A TO-247PowerMesh™II MOSFETs TYPICAL R DS (on) = 0.073Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTEDs NEW HIGH VOLTAGE BENCHMARK sGATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns swithing speed, gate charge and ruggedness.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS)s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D IRFP250200V< 0.085Ω33 ASymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)200V V DGR Drain-gate Voltage (R GS = 20 k Ω)200V V GS Gate- source Voltage±20V I D Drain Current (continuos) at T C = 25°C 33A I D Drain Current (continuos) at T C = 100°C 20A I DM (q )Drain Current (pulsed)132A P TOT Total Dissipation at T C = 25°C180W Derating Factor1.44W/°C dv/dt(1)Peak Diode Recovery voltage slope 5V/ns T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°C(1)I SD ≤33A, di/dt ≤300A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.IRFP2502/8THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICRthj-case Thermal Resistance Junction-case Max 0.66°C/W Rthj-amb Thermal Resistance Junction-ambient Max 30°C/W Rthc-sinkThermal Resistance Case-sink Typ0.1°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)33A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)600mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0200V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±30V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 16A 0.0730.085ΩI D(on)On State Drain CurrentV DS > I D(on) x R DS(on)max, V GS =10V33ASymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs Forward Transconductance V DS > I D(on) x R DS(on)max,I D = 16A1025S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 02850pF C oss Output Capacitance 420pF C rssReverse Transfer Capacitance120pF3/8IRFP250ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 100V, I D =16 A R G =4.7Ω, V GS = 10V (see test circuit, Figure 3)25ns t r Rise Time 50ns Q g Total Gate Charge V DD = 160V, I D = 33 A,V GS = 10V, R G =4.7Ω117158nC Q gs Gate-Source Charge 15nC Q gdGate-Drain Charge50nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 160V, I D = 16 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)60ns t f Fall Time 40ns t cCross-over Time100nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 33A I SDM (2)Source-drain Current (pulsed)132A V SD (1)Forward On Voltage I SD = 33 A, V GS = 0 1.6V t rr Reverse Recovery Time I SD = 33 A, di/dt = 100A/µs, V DD = 100V, T j = 150°C (see test circuit, Figure 5)370ns Q rr Reverse Recovery Charge 5.4µC I RRMReverse Recovery Current29AIRFP2504/85/8IRFP250Normalized On Resistance vs TemperatureIRFP2506/8Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadIRFP2507/8IRFP2508/8Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.。

IRFP250NPBF;中文规格书,Datasheet资料

IRFP250NPbFHEXFET ® Power MOSFET08/18/10ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 30I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 21A I DMPulsed Drain Current 120P D @T C = 25°C Power Dissipation 214W Linear Derating Factor 1.4W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 315mJ I AR Avalanche Current30A E AR Repetitive Avalanche Energy 21mJ dv/dt Peak Diode Recovery dv/dt 8.6V/ns T J Operating Junction and-55 to +175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case–––0.7R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/WR θJAJunction-to-Ambient–––40Thermal Resistance 1Descriptionl Advanced Process Technology l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Ease of Parallelingl Simple Drive Requirements TO-247AClLead-FreePD - 95007AIRFP250NPbFSource-Drain Ratings and CharacteristicsStarting T J = 25°C, L = 1.9mHR G = 25Ω, I AS = 18A. (See Figure 12)Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)Notes:I SD ≤ 18A , di/d t ≤ 374A/µs, V DD ≤ V (BR)DSS ,T J ≤ 175°CPulse width ≤ 300µs; duty cycle ≤ 2%.Electrical Characteristics @ T = 25°C (unless otherwise specified)IRFP250NPbF 3Vs. TemperatureIRFP250NPbF4Fig 5. Typical Capacitance Vs.Drain-to-Source VoltageFig 6.Gate-to-Source VoltageForward VoltageTypical Gate Charge Vs.1101001000V DS , Drain-to-Source Voltage (V)010002000300040005000C , C a p a c i t a n c e (p F )IRFP250NPbF5Fig 9. Maximum Drain Current Vs.Fig 10a. Switching Time Test CircuitV V d(on)rd(off)fFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseDDIRFP250NPbF6VDSCurrent Sampling Resistors10 VFig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive WaveformsI ASVs. Drain CurrentV DDIRFP250NPbF7Fig 14. For N-Channel HEXFETS* V GS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test CircuitV DDIRFP250NPbFData and specifications subject to change without notice.233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .08/2010分销商库存信息: IRIRFP250NPBF。

英飞凌 FF225R65T3E3 XHP 3 模块数据表

XHP ™3 模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管特性•电气特性-V CES = 6500 V-I C nom = 225 A / I CRM = 450 A -高动态稳定性-低 V CEsat -沟槽栅IGBT3•机械特性-封装的 CTI > 600-加强绝缘封装，10.4kV 交流 60 秒-碳化硅铝 (AlSiC) 基板提供更高的温度循环能力-扩大存储温度范围至 T stg = -55°C -高爬电距离和电气间隙-外壳材料符合EN45545-2 “铁路车辆防火”标准中的 R23 (HL3) 等级可选应用•牵引变流器•中压变流器产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。

描述FF225R65T3E3XHP ™3 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 6封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .141封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 60 s10.4kV 局部放电熄弧电压V isol RMS, f = 50 Hz, Q PD typ. 10 pC 5.1kV DC 稳定性V CE(D)T vj=25°C, 100 Fit3800V 模块基板材料AlSiC爬电距离d Creep端子至散热器53.0mm 爬电距离d Creep端子至端子53.0mm 电气间隙d Clear端子至散热器36.0mm 电气间隙d Clear端子至端子26.0mm 相对电痕指数CTI > 600表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE25nH 模块引线电阻,端子-芯片R AA'+CC'T C=25°C, 每个开关0.33mΩ模块引线电阻,端子-芯片R CC'+EE'T C=25°C, 每个开关0.42mΩ储存温度T stg-55125°C 模块安装的安装扭距M根据相应的应用手册进行安装M6, 螺丝 4.25 5.75Nm端子安装扭矩M根据相应的应用手册进行安装M3, 螺丝0.9 1.1Nm M8, 螺丝810重量G700g 2IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = -50 °C5900VT vj = 125 °C6500连续集电极直流电流I CDC T vj max = 125 °C T C = 80 °C225A 集电极重复峰值电流I CRM t p受限于 T vj op450A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 225 A, V GE = 15 V T vj = 25 °C 3.00 3.40VT vj = 125 °C 3.70 4.20栅极阈值电压V GEth I C = 33 mA, V CE = V GE, T vj = 25 °C 5.406 6.60V 栅极电荷Q G V GE = ±15 V, V CE = 3600 V10.5µC 内部栅极电阻R Gint T vj = 25 °C0.67Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V65.6nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V1nF 集电极-发射极截止电流I CES V CE = 6500 V, V GE = 0 V T vj = 25 °C5mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C400nA开通延迟时间(感性负载)t don I C = 225 A, V CE = 3600 V,V GE = ±15 V, R Gon = 4.7 ΩT vj = 25 °C0.240µs T vj = 125 °C0.240上升时间(感性负载)t r I C = 225 A, V CE = 3600 V,V GE = ±15 V, R Gon = 4.7 ΩT vj = 25 °C0.070µs T vj = 125 °C0.080关断延迟时间(感性负载)t doff I C = 225 A, V CE = 3600 V,V GE = ±15 V, R Goff = 22 ΩT vj = 25 °C 6.000µs T vj = 125 °C 6.400下降时间(感性负载)t f I C = 225 A, V CE = 3600 V,V GE = ±15 V, R Goff = 22 ΩT vj = 25 °C0.950µs T vj = 125 °C 2.000开通损耗能量 (每脉冲)E on I C = 225 A, V CE = 3600 V,Lσ = 85 nH, V GE = ±15 V,R Gon = 4.7 Ω, di/dt =2200 A/µs (T vj = 125 °C)T vj = 25 °C1230mJ T vj = 125 °C1710关断损耗能量 (每脉冲）E off I C = 225 A, V CE = 3600 V,Lσ = 85 nH, V GE = ±15 V,R Goff = 22 Ω, dv/dt =2100 V/µs (T vj = 125 °C)T vj = 25 °C875mJ T vj = 125 °C1170短路数据I SC V GE≤ 15 V, V CC = 4500 V,V CEmax=V CES-L sCE*di/dt t P≤ 10 µs,T vj=125 °C1300A结－外壳热阻R thJC每个 IGBT29.1K/kW 外壳－散热器热阻R thCH每个 IGBT21.3K/kW 允许开关的温度范围T vj op-50125°C3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = -50 °C5900VT vj = 125 °C6500连续正向直流电流I F225A 正向重复峰值电流I FRM t P = 1 ms450A I2t-值I2t t P = 10 ms, V R = 0 V T vj = 125 °C45.2kA²s 最大损耗功率P RQM T vj = 125 °C1000kW 最小开通时间t onmin10µs表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 225 A, V GE = 0 V T vj = 25 °C 3.10 3.55VT vj = 125 °C 2.85 3.25反向恢复峰值电流I RM V R = 3600 V, I F = 225 A,V GE = -15 V, -di F/dt =2200 A/µs (T vj = 125 °C)T vj = 25 °C405A T vj = 125 °C365恢复电荷Q r V R = 3600 V, I F = 225 A,V GE = -15 V, -di F/dt =2200 A/µs (T vj = 125 °C)T vj = 25 °C255µC T vj = 125 °C505反向恢复损耗（每脉冲）E rec V R = 3600 V, I F = 225 A,V GE = -15 V, -di F/dt =2200 A/µs (T vj = 125 °C)T vj = 25 °C450mJ T vj = 125 °C1070结－外壳热阻R thJC每个二极管51.3K/kW 外壳－散热器热阻R thCH每个二极管24.2K/kW 允许开关的温度范围T vj op-50125°C5电路拓扑图Beispiel: PrimePACK-3+ CostdownCommon Collektorxx.03.2019 mit WW, Jürgen Esch36NTC 9,11,13T23,4D29651T1D187202.08.2021 Beispiel für A.Schulz10: NC图 1FF225R65T3E3XHP ™3 模块5 电路拓扑图6 封装尺寸6封装尺寸图 27 模块标签代码7模块标签代码图 3修订历史修订历史修订版本发布日期变更说明V1.02017-12-19Target datasheetV1.12018-04-17Target datasheetV2.02018-04-23Preliminary datasheetn/a2020-09-01Datasheet migrated to a new system with a new layout and new revisionnumber schema: target or preliminary datasheet = 0.xy; final datasheet =1.xy1.102020-12-111.112022-04-12Final datasheet商标所有参照产品或服务名称和商标均为其各自所有者的财产。

FSP250-60THA中文资料

TEL: 626-839-7180
FAX: 408-519-9999
FAX: 626-839-3395
E-MAIL: info@
Line Reg.
± 1% ± 1% ± 1% ± 1% ± 2% ± 1%
Ripple & Noise
50mV P-P 50mV P-P 120mV P-P 120mV P-P 120mV P-P 50mV P-P
Specification
• Temperature Range: Operating 0° C ~ +25° C on full load; De-rate 2W/C from +50° C to +25° C; storage & shipping -20° C ~ +65° C
• Humidity: 90% on operating and 95% on storage • Dielectric Withstand: Input to frame ground 1800V AC
Features
• Complied with ATX12V 2.0 standard • High efficiency and reliability • Remote On/Off function • Internal 12V DC fan included • Noise Killer (Thermal fan speed control function) • Low noise and ripple • Complies with FCC part 15 subpart J Class B and CISPR 22
Class B • Output over voltage, short circuit, and over current protection • 100% Hi-pot, ATE, and burn-in tested • Re-settable power shut down • Approved 0950,

CPA250中文资料

CPA SERIES - 250 WATTThe AC input CPA250-4530 is a hot-swap, CompactPCI ®power supply which is fully compliant to the PICMG ®2.11Power Interface Specification using a standard Positronic 47-pin connector. Extra-high current density using innovative Power-One EDGE technology allows this unit to deliver up to 40amperes on both the +5 and +3.3 volt outputs at 50ºC.Remote sense and active current share on the +5, +3.3,and +12 volt outputs along with ORing FETs allow these units to be used in redundant, hot-swap applications.The CPA250-4530 is feature rich, meets international safety standards, and displays the CE Mark for the Low Voltage Directive (LVD).FEATURES•Wide Input Range (85-264 VAC)•Delivers 40A for the +5V and +3.3V Outputs (No Restrictions)•Single-wire Current Share on Outputs V1, V2, and V3•Remote Sense on Outputs V1, V2, and V3•Overtemperature, Overvoltage, and Overcurrent Protection •Input Good and Power Fail LED Indicators •Power Fail and Temperature Warning Signals •Inhibit and Enable Inputs•Fully Compliant to PICMG ®2.11 CompactPCI ®Specification •Extra-High Current Density in Industry-Standard 3U x 8HP x 160mm PackageCompactPCI and PICMG are registered trademarks of the PCI Industrial Computer Manufacturers Group.REV. 10/25/01A d v a n c e d P r o d u ctR e l e a s eCPA SERIES - 250 WATTSAFETY, REGULATORY, AND EMI SPECIFICATIONSPARAMETER CONDITIONS/DESCRIPTION MIN NOM MAX UNITS Agency Approvals UL1950.cUL1950.ApprovedEN60950 (TÜV).Dielectric Withstand Voltage Input to Output per EN60950.4243VDC Electromagnetic Interference EN55022 / CISPR 22 -Conducted.ARadiated.A Class ESD Susceptibility Per EN61000-4-2, level 4.8kV Radiated Susceptibility Per EN61000-4-3, level 3.10V/M EFT/Burst Per EN61000-4-4, level 3.±2kV Input Surge Per EN61000-4-5, level 3.Line to Line1kVLine to Ground2Conducted Disturbance Per EN61000-4-6, level 2.3V Insulation Resistance Input to Output.10M⍀ENVIRONMENTAL SPECIFICATIONSPARAMETER CONDITIONS/DESCRIPTION MIN NOM MAX UNITS Altitude Operating.10k ASL Ft.Non-Operating.40k ASL Ft. Operating Temperature With 400 LFM forced-air cooling At 100% load:050°C Derate linearly above 50°C by 2.5% per °C.At 50% load:70°C Storage Temperature-4085°C Relative Humidity Non-Condensing.595%RH Shock Peak acceleration.20G PK Vibration Random vibration, 10 Hz to 2 kHz, 3 axis.6G RMSCPA SERIES - 250 WATTOVERALL SIZE:5.07"H x 1.60"W x 6.40"D (128.7mm x 40.6mm x 162.5mm)WEIGHT:1.75 lb (0.8 kg)CPA SERIES - 250 WATT。

FURUNO FS-1562-15(150W), FS-1562-25(250W) 说明书

FS-1562-15/25 符合下列规范：－IMOA.421(XI), A610(15), A613(15), A694(17) －国际电信联盟的无线电规则－ETS 300 373 －IEC 1097-9 草案，国际电工协会 945 通则－EC EMC 对 CE 制造的指导－相关的其他规则
通则
FS－1562-25…40A 无线电话信号发生器：双音信号 2200Hz 和 1300Hz 交替发射。
发射机
输出阻抗：50 欧姆
输出功率：J3E/H3E：FS-1562-15…150 W pep, FS-1562-25…250 W pep
J2B:
FS-1562-15…150 W pep, FS-1562-25…250W
!“危险”：
没有注意避免将导致人员伤亡或伤残。
该警告显示潜在的危险情况，如果
!“警告”：
该警告显示潜在的危险情况，如果
没有注意避免可能导致人员伤亡或伤残。
!
“注意”：
该警告显示潜在的危险情况，如果
没有注意避免可能导致较小的或中等的人员伤害或财产损失。
！危险
在对本设备没有熟悉之前，不要打开机盖进行内部的电路维修工作。下列部位有高电压，可能会致死或严重的伤害存在： .收发单元 . 天线和天线匹配器（都在 TX）潜在的高压在下列点显示：
罗经安全距离
单元
标准
收发机
1.2m
天线偶合器 1.0m
AT-1560-15
天线偶合器 1.0m
AT-1560-25
话机
0.6m
PA-2500
0.9m
PR-300
0.9m
PR-850
1.Байду номын сангаасm

F20UP60DN中文资料

FFPF20UP60DN Rev. A
3

元器件交易网
FFPF20UP60DN
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20 (7.00)
ø3.18 ±0.10
2.54 ±0.20 (0.70)
10
100
200 300 400 Reverse Voltage, VR [V]
500
600
Figure 3. Typical Junction Capacitance
125
Reverse Recovery Time, trr [ns]
Typical Capacitance at 0V = 124 pF
®
PDP-SPM™ Power220®
Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6
Figure 4. Typical Reverse Recovery Time vs. di/dt
160
Capacitances , Cj [pF]
100
120
TC = 100 C
o
75
50
80
25
TC = 25 C
o
0 0.1
1 10 Reverse Voltage, VR [V]
100

2014明纬开关电源手册

25
Environment HLG-150H, HLG-185H, HLG-240H
26
HLG-320H
27
MDR-10 / 20 / 40 / 60 / 100
28
DR-15, DR-30, DR-60, DR-100
29
DR-45, DR-75, DR-120,
30
DIN Series
DRP-240, DRP-480, DRP-480S DRH-120, DRT-240/480/960
2013
April
Introduction
Green Enterprises, Green Products
EXCELLENCE
TAIWAN
SUPERIOR BRANDS
E stablished in 1982, MEAN WELL is a leading standard switching power supply manufacturer in the world. During the past 30 years, our slogan “your reliable power partner” has been curved into the minds of all MEAN WELL employees and put into effect thoroughly between MEAN WELL and our valuable customers. Sure-footedly nurtured the core competency of P, Q, C, D, S, R (Product, Quality, Cost, Delivery, Service, and Reliable Relationship), we made every effort to accomplish the one stop shopping environment with the most complete standard power product lines.

TLP250中文资料-datasheet

TLP250中文资料-datasheet东芝光电耦合器砷化镓铝集成红外光电二极管TLP250(INV) TLP250(INV)晶体反相器栅极驱动IGBT调节器大功率MOSFET栅极驱动东芝TLP250(发票)由GaAlAs发光二极管和集成的光电探测器.单位 mm.本芯片是8脚DIP封装TLP250(INV) 适用于栅极驱动的IGBT管和大功率MOSFET管? 输入阈值电流 ? 电源电流(ICC) ? 电源电压(VCC) ? 输出电流(IO) ? 隔离电压 ? UL 认证 ? 期权(D4)VDE 核准 : 德标 VDE0884/06.92 76823号证书最大绝缘工作电压 : 630VPK 允许的最高过电压: 4000VPK(注):当需要一个VDE0884认可类型, 请指定命名为“期权(D4)”? 爬电距离空隙: 6.4mm(最小) : 6.4mm(最小) : IF=5mA(最大) : 11mA(最大) : 10~35V :±2.0A(最大) : 2500Vrms: UL1577,E67349号文件? 开关转换时间(tpLH/tpHL) : 0.5μs(最大)东芝重: 0.54 g11?10C4TRUTH TABLE管脚排列(俯视图) 输入 LED 开关１记录 2 ８７６５1:空置. 2: 正极 3:负极 4:空置. 5:地6: 电压输出 7:电压输出 8:电源记录 1 开关２关开３４SCHEMATICIF 2 + ICC （Tr1） 8VCCVF3 -一个0.1uF的旁路电容应该和8脚和5脚连接起来（见注释5） . VO ７ VO IO 6 （Tr２） GND 512002-06-27极限工作范围 (工作温度=25°C时)TLP250(INV) 典型参数正向电流正向电流变化率 (工作温度≥70℃) LED 浪涌电流反向电压节点温度符号 IF ?IF /?Ta (注释1) IFPT VR Tj 极限值 20 ?0.36 1 5 125 ?1.5 单位mA mA /°C A V °C “H” 峰值输出电流脉冲宽度≤2.5μs , 频率≤15 kHz 脉冲宽度≤1.0μs , 频率≤15 kHz (注释2) A IOPH ?2.0 “L” 峰值输出电流脉冲宽度≤2.5μs , 频率≤15 kHz 脉冲宽度≤1.0μs , IOPL +1.5+2.0 A 探测器频率≤15 kHz 输出电压供电电压 (工作温度≤70°C) (工作温度=85°C) (工作温度≤70°C) (工作温度=85°C) VO 35 24 V VCC 35 24 V 输出电压变化率(工作温度≥70°C) 供电电压变化率(工作温度≥70°C) 节点温度工作频率工作温度范围存储温度范围引脚焊接温度(10s) 隔离电压 (交流,1分钟., 相对湿度≤60%,工作温度=25°C)?VO /?Ta ?VCC /?Ta Tj （注释3) f Topr Tstg Tsol (注释4) BVS ?0.73 ?0.73 125 25 ?20~85 ?55~125 260 2500 V /°C V /°C °C kHz °C °C °C V（有效值）(注释1) : 脉宽≤1μs,300pps (Note 2) : 浪涌(注释3) : 浪涌波形IOPH≤?1.0A (≤2.5μs) , IOPL≤+1.0A (≤2.5μs) (注释4) : 双端驱动 : 1,2,3 ,4 脚短接；5,6,7 ,8 脚短接.(注释5): 用一个0.1μF陶瓷电容应该连接在8脚和5脚之间来获得稳定的放大增益。

士兰微电子 SGT60N60FD1PN P7 说明书 60A、600V绝缘栅双极型晶体管说明书

士兰微电子SGT60N60FD1PN/P7说明书 60A 、600V 绝缘栅双极型晶体管描述 SGT60N60FD1PN/P7绝缘栅双极型晶体管采用场截止（Field Stop ）工艺制作，具有较低的导通损耗和开关损耗，该产品可应用于UPS,SMPS以及PFC 等领域。

特点♦60A ，600V ，V CE(sat)(典型值)=2.2V@I C =60A ♦低导通损耗 ♦快开关速度 ♦ 高输入阻抗命名规则SGT 60 N 60 □□□ P □IGBT 系列电流规格,60表示60AN : N ChannelNE : N 沟平面栅带ESDT : N 沟槽栅电压规格 : 60表示600V D : 封装快恢复二极管的器件R : 集成续流二极管的器件封装形式,如PN 表示TO-3P 封装形式; P7表示TO-247封装形式1,2,3… : 版本号L : 低饱和压降器件S : 标准器件Q : 快速器件F : 高速器件UF : 超高速器件产品规格分类产品名称封装形式打印名称环保等级包装 SGT60N60FD1PNTO-3P 60N60FD1 无铅料管 SGT60N60FD1P7 TO-247-3L 60N60FD1 无铅料管极限参数(除非特殊说明，T C =25°C)参数符号参数范围单位集电极-射极电压V CE 600 V 栅极-射极电压V GE ±20 V 集电极电流T C =25°C I C 120 A T C =100°C 60 集电极脉冲电流I CM 180 A 耗散功率（T C =25°C ）P D 321 W 工作结温范围T J -55～+150 °C 贮存温度范围T stg -55～+150 °C士兰微电子SGT60N60FD1PN/P7说明书热阻特性参数符号参数范围单位芯片对管壳热阻（IGBT）RθJC0.39 °C/W 芯片对管壳热阻（FRD）RθJC 1.10 °C/W 芯片对环境的热阻RθJA40 °C/WIGBT电性参数(除非特殊说明，T C=25°C)参数符号测试条件最小值典型值最大值单位集射击穿电压BV CE V GE=0V, I C=250μA 600 -- -- V 集射漏电流I CES V CE=600V, V GE=0V -- -- 200 μA 栅射漏电流I GES V GE=20V, V CE=0V -- -- ±400 nA 栅极开启电压V GE(th)I C=250μA, V CE=V GE 4.0 5.0 6.5 V饱和压降V CE(sat)I C=60A,V GE=15V -- 2.2 2.7 V I C=60A,V GE=15V,T C=125°C -- 2.6 -- V输入电容C ies VCE=30VV GE=0Vf=1MHz -- 2850 --pF输出电容C oes-- 294 -- 反向传输电容C res-- 85 --开启延迟时间T d(on)V CE=400VI C=60AR g=10ΩV GE=15V感性负载-- 36 --ns开启上升时间T r-- 142 --关断延迟时间T d(off)-- 193 --关断下降时间T f-- 136 --导通损耗E on-- 3.72 --mJ 关断损耗E off-- 1.77 --开关损耗E st-- 5.49 --栅电荷Q gV CE = 400V, I C=60A, V GE = 15V -- 179 --nC发射极栅电荷Q ge-- 23 --集电极栅电荷Q gc-- 100 --FRD电性参数(除非特殊说明，T C=25°C)参数符号测试条件最小值典型值最大值单位二极管正向压降V FM I F=30A, T C=25°C -- 1.9 2.6V I F=30A, T C=125°C -- 1.5 --二极管反向恢复时间T rr I ES=30A, dI ES/dt=200A/μs -- 38 -- ns 二极管反向恢复电荷Q rr I ES=30A, dI ES/dt=200A/μs -- 85 -- nC士兰微电子SGT60N60FD1PN/P7说明书典型特性曲线图1. 典型输出特性集电极电流 – I C (A )090180026集电极-发射极电压 – V CE (V)15030120集电极-发射极电压 – V C E (V )栅极-发射极电压 – V GE (V)图5. 饱和电压 vs.栅极-发射极电压 0204820481612图6. 饱和电压vs.壳温集电极-发射极电压 – V C E (V )12402575150壳温– T C (°C)125412165060集电极-发射极电压 – V C E (V )栅极-发射极电压 – V GE (V)图4. 饱和电压 vs.栅极-发射极电压020482048161212163100图2. 传输特性集电极电流 – I C (A )04010001015栅极-发射极电压 – V GE (V)8020605图3. 典型饱和电压特性集电极电流 – I C (A )0601800246集电极-发射极电压 – V CE (V)12030901501.52.53.5士兰微电子SGT60N60FD1PN/P7说明书典型特性曲线（续）图8. 栅极电荷栅极-发射极电压 – V G E (V )015080200栅极电荷 – Qg(nC)612图9. 开启特性 vs.栅极电阻开关时间(n S )栅极电阻 - Rg(Ω)开关损耗 - E (m J )栅极电阻 - R g (Ω)图11. 开关损耗 vs. 栅极电阻3940120160图10. 关断特性 vs.栅极电阻开关时间(n S )栅极电阻 - Rg(Ω)100图7. 电容特性C (p F)06000135集电极-发射极电压 – V CE (V)4000102000100030005000100000101010001020501图12.开启特性 vs.集电极电流开关时间(n S )集电极电流 - I C (A)10100001011001010000301100203040502030405051030406090120士兰微电子SGT60N60FD1PN/P7说明书典型特性曲线（续）开关损耗（m J ）集电极电流 - I C (A)图14.开关特性vs. 集电极电流反向恢复时间- T r r (n s )正向电流 - I F (A)图16.反向恢复时间vs. 正向电流开关时间（n s ）集电极电流 - I C (A)图13.关断特性vs. 集电极电流45303540集电极电流 - I C E (A )集电极-发射极电压 - V CE (V)图18.最大安全工作区域10210210-110110310010110030105060402010311000200.110406080120100002012010010804060100100正向电流-I F M (A )正向电压-V FM (V)图15.正向特性10000.5 2.510121 1.5反向恢复电荷- Q r r (n c )正向电流 - I F (A)图17.反向恢复电荷vs. 正向电流100020403010506040206080士兰微电子SGT60N60FD1PN/P7说明书典型特性曲线（续）热阻抗（标准化）脉冲宽度(Sec)图19.瞬态热阻抗-脉冲宽度 (IGBT)10110010-110-310-510-110-610-310010-410-210-2热阻抗（标准化）脉冲宽度(Sec)图20.瞬态热阻抗-脉冲宽度 (FRD)10110010-110-310-510-110-610-310010-410-210-2101102士兰微电子SGT60N60FD1PN/P7说明书封装外形图士兰微电子SGT60N60FD1PN/P7说明书声明：产品名称： SGT60N60FD1PN/P7文档类型：说明书版权：杭州士兰微电子股份有限公司公司主页： http: // 版本：1.3 作者：殷资修改记录：1. 修改TO-247-3L 封装的材料信息版本：1.2 作者：殷资修改记录：1. 增加TO-247-3L 封装形式版本：1.1 作者：殷资修改记录：1. 修改产品规格分类版本：1.0 作者：殷资修改记录：1. 正式发布版本♦士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。

irfp250器件手册

File Number2330.3IRFP25033A, 200V, 0.085 Ohm, N-Channel Power MOSFETThis N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a speciﬁed level ofenergy in the breakdown avalanche mode of operation.All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.Formerly developmental type T A9295.Features•33A, 200V •r DS(ON) = 0.085Ω•Single Pulse Avalanche Energy Rated •SOA is Power Dissipation Limited •Nanosecond Switching Speeds •Linear T ransfer Characteristics •High Input Impedance•Related Literature-TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”SymbolPackagingJEDEC STYLE TO-247Ordering InformationPART NUMBER PACKAGE BRANDIRFP250TO-247IRFP250NOTE:When ordering, use the entire part number.GDSSOURCEDRAINGATEDRAIN (TAB)Data SheetJuly 1999Absolute Maximum RatingsT C = 25o C, Unless Otherwise SpeciﬁedIRFP250UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DS 200V Drain to Gate Voltage (R GS = 20k Ω)(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DGR 200V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D T C = 100o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 3321A A Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM 130A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS ±20V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D 180W Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44W/o C Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E AS 810mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T J,T STG -55 to 150o CMaximum Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg300260o C o CCAUTION:Stresses above those listed in “Absolute Maximum Ratings”may cause permanent damage to the device.This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.NOTE:1.T J = 25o C to 125o C.Electrical SpeciﬁcationsT C = 25o C, Unless Otherwise SpeciﬁedPARAMETERSYMBOL TEST CONDITIONSMIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250µA, V GS = 0V (Figure 10)200--V Gate Threshold Voltage V GS(TH)V GS = V DS , I D = 250µA 2.0- 4.0V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS , V GS = 0V--25µA V DS = 0.8 x Rated BV DSS , V GS = 0V, T C = 125o C --250µA On-State Drain Current (Note 2)I D(ON)V DS > I D(ON) x r DS(ON)MAX , V GS = 10V 33--A Gate to Source Leakage Current I GSS V GS =±20V--±100nA Drain to Source On Resistance (Note 2)r DS(ON)I D = 17A, V GS = 10V (Figures 8, 9)-0.070.085ΩForward Transconductance (Note 2)g fs V DS ≥ 50V, I D = 17A (Figure 12)1319-S Turn-On Delay Time t d(ON)V DD =100V, I D =30A, R GS = 6.2Ω,V GS =10V,R L = 3.2ΩMOSFET Switching Times are Essentially Independent of Operating Temperature-1830ns Rise Timet r -125180ns Turn-Off Delay Time t d(OFF)-70100ns Fall Timet f -80120ns Total Gate Charge(Gate to Source + Gate to Drain)Q g(TOT)V GS = 10V, I D = 30A, V DS = 0.8 x Rated BV DSS,I G(REF) = 1.5mA (Figure 14)Gate Charge is Essentially Independent of Operating Temperature-79120nC Gate to Source Charge Q gs -12-nC Gate to Drain “Miller” Charge Q gd -42-nC Input Capacitance C ISS V DS = 25V, V GS = 0V, f = 1MHz (Figure 11)-2000-pF Output CapacitanceC OSS -800-pF Reverse Transfer Capacitance C RSS -300-pF Internal Drain InductanceL DMeasured from the Contact Screw on Header Closer to Source and Gate Pins to Center of DieModified MOSFET Symbol Showing the Internal Device Inductances-5.0-nHInternal Source InductanceL SMeasured from the Source Lead, 6.0mm (0.25in) from Header to Source Bonding Pad-12.5-nHThermal Resistance, Junction to Case R θJC --0.70o C/W Thermal Resistance, Junction to AmbientR θJAFree Air Operation--30o C/WL S L DGD SSource to Drain Diode SpeciﬁcationsPARAMETERSYMBOL TEST CONDITIONSMIN TYP MAX UNITS Continuous Source to Drain Current I SD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier--33A Pulse Source to Drain Current (Note 3)I SDM--130ASource to Drain Diode Voltage (Note 2)V SD T J = 25o C, I SD = 33A, V GS = 0V (Figure 13)-- 2.0V Reverse Recovery Time t rr T J = 25o C, I SD = 30A, dI SD /dt = 100A/µs 140-630ns Reverse Recovery Charge Q RRT J = 25o C, I SD = 30A, dI SD /dt = 100A/µs1.8-8.1µCNOTES:2.Pulse test: pulse width ≤300µs, duty cycle ≤2%.3.Repetitive rating:pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).4.V DD = 50V, starting T J = 25o C, L = 1.1mH, R G = 50Ω,peak I AS = 33A.Typical Performance CurvesUnless Otherwise SpeciﬁedFIGURE 1.NORMALIZED POWER DISSIPATION vs CASETEMPERATURE FIGURE 2.MAXIMUM CONTINUOUS DRAIN CURRENT vsCASE TEMPERATUREFIGURE 3.MAXIMUM TRANSIENT THERMAL IMPEDANCEGDS50100150T C , CASE TEMPERATURE (o C)P O W E R D I S S I P A T I O N M U L T I P L I E R0.20.40.60.81.01.2050100I D , D R A I N C U R R E N T (A )T C , CASE TEMPERATURE (o C)150257512540322416810.110-310-510-410-310-20.1110Z θJ C , T H E R M A L I M P E D A N C Et 1, RECTANGULAR PULSE DURATION (s)SINGLE PULSEP DMNOTES:DUTY FACTOR: D = t 1/t 2PEAK T J = P DM x Z θJC + T Ct 1t 20.10.020.20.50.010.0510-2FIGURE 4.FORWARD BIAS SAFE OPERATING AREA FIGURE 5.OUTPUT CHARACTERISTICSFIGURE 6.SATURATION CHARACTERISTICS FIGURE 7.TRANSFER CHARACTERISTICSNOTE: Heating effect of 2µs pulse is minimal.FIGURE 8.DRAIN TO SOURCE ON RESISTANCE vs GATEVOLTAGE AND DRAIN CURRENTFIGURE 9.NORMALIZED DRAIN TO SOURCE ONRESISTANCE vs JUNCTION TEMPERATURE110102103V DS , DRAIN TO SOURCE VOLTAGE (V)1031021010.1I D , D R A I N C U R R E N T (A )SINGLE PULSE T J = MAX RATED BY r DS(ON)AREA IS LIMITED OPERATION IN THIS 10µs 100µs1ms 10msDC T C = 25o CI D , D R A I N C U R R E N T (A )0204060801020304050100V GS = 7VV GS = 5V V DS , DRAIN TO SOURCE VOLTAGE (V)V GS = 4VPULSE DURATION = 80µs 0V GS = 10V V GS = 6VDUTY CYCLE = 0.5% MAX1012352030I D , D R A I N C U R R E N T (A )V DS , DRAIN TO SOURCE VOLTAGE (V)40450V GS =4VV GS = 5V V GS = 6VV GS = 7VV GS = 10VV GS = 8VPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX2468V GS , GATE TO SOURCEVOLTAGE (V)1021010.1I D , D R A I N C U R R E N T (A )T J = 150o CT J = 25o C10PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V DS ≥ 50VI D , DRAIN CURRENT (A)r D S (O N ), O N -S T A T E R E S I S T A N C E (Ω)0.50.40.30.20.1255075100125V GS = 20VV GS = 10VPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAXN O R M A L I Z E D D R A I N T O S O U R C E 3.01.81.20.6-40040T J , JUNCTION TEMPERATURE (o C)1201602.480O N R E S I S T A N C EPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX I D = 17A, V GS = 10VFIGURE 10.NORMALIZED DRAIN TO SOURCE BREAKDOWNVOLTAGE vs JUNCTION TEMPERATUREFIGURE 11.CAPACITANCE vs DRAIN TO SOURCE VOLTAGEFIGURE 12.TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13.SOURCE TO DRAIN DIODE VOLTAGEFIGURE 14.GATE TO SOURCE VOLTAGE vs GATE CHARGEN O R M A L I Z E D D R A I N T O S O U R C E 1.251.050.950.850.75-40040T J , JUNCTION TEMPERATURE (o C)1201601.1580I D = 250µAB R E A K D O W N V O L T A G EV DS , DRAIN TO SOURCE VOLTAGE (V)C , C A P A C I T A N C E (p F )750060004500300015001251025102C ISS = C GS + C GDC RSS = C GDC OSS ≈ C DS + C GD V GS = 0V, f = 1MHz C ISSC OSSC RSS25201510501020304050I D , DRAIN CURRENT (A)g f s , T R A N S C O N D U C T A N C E (S )T J = 150o CT J = 25o CPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V DS ≥50V0.5 1.0 1.5 2.0V SD , SOURCE TO DRAIN VOLTAGE (V)103102101I S D , S O U R C E T O D R A I N C U R R E N T (A )T J = 150o C T J = 25o CPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX0255075100125I D = 30AQ g , GATE CHARGE (nC)V G S , G A T E T O S O U R C E (V )20161284V DS = 100V V DS = 160V V DS = 40VTest Circuits and WaveformsFIGURE 15.UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16.UNCLAMPED ENERGY WAVEFORMSFIGURE 17.SWITCHING TIME TEST CIRCUITFIGURE 18.RESISTIVE SWITCHING WAVEFORMSFIGURE 19.GATE CHARGE TEST CIRCUITFIGURE 20.GATE CHARGE WAVEFORMSt PV GS0.01ΩLI AS+-V DSV DDR GDUTVARY t P TO OBTAIN REQUIRED PEAK I AS0VV DDV DSBV DSSt PI ASt AVV GSR LR GDUT+-V DDt ON t d(ON)t r90%10%V DS90%10%t ft d(OFF)t OFF 90%50%50%10%PULSE WIDTHV GS 000.3µF12V BATTERY50k ΩV DSSDUTDGI G(REF)(ISOLATED V DS0.2µF CURRENT REGULATORI D CURRENT SAMPLING I G CURRENT SAMPLING SUPPLY)RESISTORRESISTORSAME TYPE AS DUTQ g(TOT)Q gdQ gsV DSV GSV DDI G(REF)All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-out notice.Accordingly,the reader is cautioned to verify that data sheets are current before placing rmation furnished by Intersil is believed to be accurate and reliable.However,no responsibility is assumed by Intersil or its subsidiaries for its use;nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web site Sales Ofﬁce HeadquartersNORTH AMERICAIntersil CorporationP. O. Box 883, Mail Stop 53-204 Melbourne, FL32902TEL:(407) 724-7000FAX: (407) 724-7240EUROPEIntersil SAMercure Center100, Rue de la Fusee1130 Brussels, BelgiumTEL: (32) 2.724.2111FAX: (32) 2.724.22.05ASIAIntersil (Taiwan) Ltd.7F-6, No. 101 Fu Hsing North RoadTaipei, TaiwanRepublic of ChinaTEL: (886) 2 2716 9310FAX: (886) 2 2715 3029。

250 V 真空包机替代零件目录说明书

C ATALOG OFR EPLACEMENT PARTS The Choice of ExperienceMODEL250 V ACUUMP ACKAGE M ACHINE250 VACUUM PACKAGE MACHINE REPLACEMENT PARTS250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSTable of ContentsPANEL5 CONTROL7 ELECTRICAL COMPONENTS AND PUMPPANELS9 COVERANDASSEMBLY11 SEALBAR250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSCONTROL PANEL250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSC ONTROL PANELILLUS. PART NO. NAME OF PART AMT. PL-590241 NS-011-01 Nut 4-40 Hex (SST) (4) (4)2 WL-008-45 Lockwasher(SST) (1)Board3 01-400033-00385PC (4)Spacer4 01-400058-001205 NS-011-01 Nut 4-40 Hex (SST) (4) (4)6 WS-023-22 Washer7 01-400101-00160 Elbow 90 Deg. 1/4 x 1/4 (1)8 01-400001-01869 Ring – Vacuum Gauge Fixation (1)9 SC-022-82 Mach. Screw 4-40 x 1 Slotted Flat Hd. (SST) (4)10 01-400033-00018Keyboard – Berkel (1)Screw11 SC-128-34 Mach.1/4-20 x 2 Slotted Flat Hd. (SST) (4)12 01-400114-00260 Gauge – Vacuum With Support (1)250 VACUUM PACKAGE MACHINE REPLACEMENT PARTS7-8ELECTRICAL COMPONENTS AND PUMP250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSE LECTRICAL COMPONENTS AND PUMPILLUS. PART NO. NAME OF PART AMT. PL-59026Assy. (1)Switch1 01-400004-00261LimitScrew2 SC-129-49 Mach.1/4-20 x 3/4 Hex Hd. (SST) (4)3 NS-046-38 Nut1/4-20 Hex (SST) (4)4 01-400004-00333 Support – Electrical Pre Assy. (1) (4)(SST)5 WS-022-21 Washer6 NS-046-38 Nut1/4-20 Hex (SST) (4)7 01-400034-00740 Holder – Fuse (1)8 01-400034-00240Fuse (250 V., 4 Amp.) (1)9 01-400034-00740 Holder – Fuse (1)10 01-400034-00210Fuse (250 V., 2 Amp.) (1)11 01-400034-00740 Holder – Fuse (1)12 01-400034-00200Fuse (250 V., 0.75 Amp.) (1)13 01-400034-00755 Holder – Fuse (1-Pole) (600 V., 30 Amp.) (1)14 01-400034-00500Fuse (250 V., 15 Amp.) (1)15 01-400034-00755 Holder – Fuse (1-Pole) (600 V., 30 Amp.) (1)16 01-400034-00445Fuse (250 V., 5 Amp.) (1)17 01-400034-00755 Holder – Fuse (1-Pole) (600 V., 30 Amp.) (1)18 01-400034-00427Fuse (250 V., 3 Amp.) (1)19 01-400034-00755 Holder – Fuse (1-Pole) (600 V., 30 Amp.) (1)20 01-400034-00445Fuse (250 V., 5 Amp.) (1)21 01-400025-00130 Overload (1)22 01-400025-00010Contactor (110 V.) (Motor) (1)23 01-400029-00008Transformer (65 VA) (120-24 V.) (1)24 01-400029-00400Transformer (200 VA) (120-24 V.) (1)25 01-400106-00070 Valve – Bellows (1)26 01-400104-00060Tube3/8 x 1/4 (1)27 - Fitting – Elbow (1)28 01-400104-00060Tube3/8 x 1/4 (1) (1)Tee29 - Fitting–30 01-400104-00060Tube3/8 x 1/4 (1)31 01-400125-00004Pump(4m3, 0.1 kW, 115 V., 60 Hz., 1 Ph.) (1) (1)32 - Tube33 - Fitting – Barb (1) (1)Tee–34 - Pipe (1)35 - Pipe (1)Atmosphere36 01-400106-00020Valve–01-400026-00590Switch – Limit ............................................................................................................................AR250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSCOVER AND PANELS250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSC OVER AND PANELS ILLUS.PART NO.NAME OF PARTAMT.PL-59025 1 SC-125-96 Mach. Screw 1/4-20 x 11/4 Phil. Pan Hd. (SST) ...........................................................................4 2 WS-022-21 Washer (SST) ............................................................................................................................4 301-400004-00309 Cover – Hinge Assy (1)4 WL-006-17 Lockwasher 1/4 (SST) .................................................................................................................4 5 WS-022-21 Washer (SST) . (4)6 NS-046-38 Nut 1/4-20 Hex (SST) (4)7 SC-126-03 Mach. Screw1/-20 x 11/2 Phil. Pan Hd. (SST) ............................................................................2 8 WS-022-21 Washer (SST) ............................................................................................................................4 9 01-400002-00438 Cover – Plexi .............................................................................................................................1 10 01-032059 Gasket – Lid (3/8 In. Neoprene) ..................................................................................................1 11 01-400005-00519 Plate Assy. – Filler......................................................................................................................1 12 01-400058-00030 Spacer .......................................................................................................................................2 13 01-400005-00522 Cover Assy. ................................................................................................................................1 14 01-400004-00406 Vacuum 250 Pre Assy. (1)15 00-129389 Spring Nut 1/4..............................................................................................................................4 16 01-400005-00526 Panel Assy. – Front ....................................................................................................................1 17 01-400001-01824 Panel – Front .............................................................................................................................1 18 - Wire – Ground ...........................................................................................................................1 19 NS-011-18 Nut 10-24 Hex (SST) .................................................................................................................1 20 01-400004-01651 Cover – Hold Down Pre-Assy. ...................................................................................................1 21 SC-018-22 Mach. Screw 10-24 x 1/2 Phil. Pan Hd. (SST) . (1)22 SC-128-34 Mach. Screw 1/4-20 x 2 Phil. Pan Hd. (SST) ..............................................................................4 23 01-400004-A1224 Spring – Pre Assy.. (2)24 NS-046-38 Nut 1/4-20 Hex (SST) (2)25 WS-022-21 Washer 1/4 Hex (SST) ................................................................................................................2 26 00-129389 Spring Nut 1/4 (4)27 NS-046-38 Nut 1/4-20 Hex (SST) ..................................................................................................................2 28 01-400001-01337 Support – Rear Spring (2)29 SC-129-49 Mach. Screw 1/4-20 x 1/2 Hex Hd. (SST) .....................................................................................2 30 01-400002-00024 Hinge – Block .. (2)31 SC-125-07 Mach. Screw 1/4-20 x 11/4 Cap Socket Hd. (SST) (4)32 SC-115-60 Mach. Screw 1/4-20 x 1/2 Phil. Pan Hd. (4)33 WS-022-21 Washer 1/4 Hex (SST) ................................................................................................................4 34 01-400004-00363 Panel – Rear Pre Assy. .. (1)35 SC-041-07 Mach. Screw 1/4-20 x 11/2 Hex Hd. (SST) ...................................................................................4 36 01-400V02-00022 Foot – Plastic .. (4)37 WS-022-21 Washer 1/4 Hex (SST) (4)38NS-018-01 Lock Nut 1/4-20 Hex (SST) (4)250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSSEAL BAR ASSEMBLY14- 11 -250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSF-43183 (November 2009)SEAL BAR ASSEMBLYILLUS.PART NO. NAME OF PART AMT.PL-590271 01-400038-00230 Duct – Wiring (With Adhesive Backing) .....................................................................................12 01-400003-0021R Tape – Te ﬂ on (14 In.) ................................................................................................................AR 301-400039-00230 Band – Re ﬂ ex (14 In.) ...............................................................................................................AR 401-400039-00200 Element – Sealing (14 In.) ........................................................................................................AR 501-400039-00270 Element – Pro ﬁ le Cut (14 In.) ...................................................................................................AR 601-400004-00334 Seal Bar Pre Assy. (Double Seal) (Incls. Items 2, 4, 8, & 25 thru 31) ........................................1 701-400004-00335 Seal Bar Pre Assy. (Bag Cut Option) (Incls. Items 2, 3, 5, 8, & 25 thru 31) ...............................1 801-400020-A0433 Seal Bar. ....................................................................................................................................1 901-400001-01829 Spacer – Seal Bar Guide ...........................................................................................................2 1001-400001-01738 Guide – Seal Bar .......................................................................................................................1 11SC-126-59 Mach. Screw 1/4-20 x 11/4 Hex Hd. (SST) ...................................................................................4 1201-400001-A2757 Support – Seal Bar ....................................................................................................................1 13SC-020-11 Mach. Screw 1/4-20 x 3/4 Flat Hd. ................................................................................................3 1401-400002-A2282 Block – Seal Bar Guide ..............................................................................................................2 15WS-022-21 Washer (SST) ............................................................................................................................4 16NS-018-01 Lock Nut 1/4-20 Hex (SST) .........................................................................................................4 17WL-006-28 Lockwasher (SST) .....................................................................................................................1 18NS-009-43 Nut 3/8-16 Hex ............................................................................................................................1 1901-400005-A1000 Bellows Assy. .............................................................................................................................1 2001-400008-00435 Bar – Upper Seal Bar Rubber ....................................................................................................1 2101-400004-00308 Seal Bar Pre Assy. – Upper .......................................................................................................1 2201-400002-00436 Support – Upper Seal Bar ..........................................................................................................1 2301-400002-00437 Spacer – Upper Seal Bar ...........................................................................................................2 2401-400076-00010 O-Ring .......................................................................................................................................2 25SC-028-16 Set Screw 8-32 x 11/2 Slotted Rd. Hd. (Brass) ...........................................................................2 2601-400027-00400 Adapter – Connector ..................................................................................................................2 27NS-011-12 Nut 8-32 Hex (SST) ...................................................................................................................4 2801-400002-00031 Connector ..................................................................................................................................2 29SC-055-02 Set Screw 1/4-20 x 5/16 Oval Pt. ...................................................................................................4 30WS-022-21 Washer (SST) ............................................................................................................................4 31NS-018-01 Lock Nut 1/4-20 Hex (SST) (4)01-400005-A0497 Seal Bar Assy. (Double Seal) (Incls. Items 1, 6, & 9 thru 13).....................................................1 01-400005-A0520 Seal Bar Assy. (Bag Cut Option) (Incls. Items 2, 7, & 9 thru 13) (1)250 VACUUM PACKAGE MACHINE REPLACEMENT PARTSFORM 43183 NOVEMBER 2009 PRINTED IN U.S.A.。

PS-60中文资料

SPECIFICATION
MODEL DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER OUTPUT VOLTAGE ADJ . R ANGE VOLTAGE TOLERANCE Note.3 LINE R EGULATION LOAD REGULATION SETUP, R ISE, HOLD TIME VOLTAGE R ANGE FREQUENCY RANGE INPUT EFFICIENCY (Typ.) AC CURRENT INRUSH CURRENT (max.) OVER L OAD PROTECTION OVER VOLTAGE WORKING TEMP. PS -6005 5V 6.5A 0 ~ 6.5A 32.5W 4.75 ~ 5.5V 2.0% 1.0% 1.0% 100ms, 30ms, 50ms/230VAC 88 ~ 264VAC 47 ~ 63Hz 76% 82% 83% 84% 1.2A/115V AC 0.8A/230V AC COLD START 18A/115V AC 36A/230V AC 105 ~ 160% rated output power Protection type : Fold back current limiting, recovers automatically after fault condition is removed 5.75 ~ 6.75V 13.8 ~ 16.2V 17.25 ~ 20.25V 27.6 ~ 32.4V Protection type : Shut down o/p voltage, re-power on to recover 1 24 ~ 370VDC PS -6012 12V 4.5A 0 ~ 4.5A 54W 120mVp-p 11.1 ~ 13.2V 1.0% 1.0% 1.0% PS -6015 15V 4A 0 ~ 4A 60W 120mVp-p 13.5 ~ 16.5V 1.0% 1.0% 1.0% PS -6024 24V 2.5A 0 ~ 2.5A 60W 150mVp-p 21.6 ~ 26.4V 1.0% 1.0% 1.0%

APS（AP250）手动反馈焊接铁说明书

INSTRUCTION MANUALAPSStand forAP250 Manual-Feed Soldering IronManual ............................. 1 unit Ref. 0027181Stand for AP250 Manual-Feed Soldering Iron............................................................................... 1 unitThe following items are included:This manual corresponds to the following reference:AP-SFPacking ListStand Cable 1m ............ 1 unit Ref. 0024227Sponge for ModularTool Stands ................... 1 unit Ref. S7034Brass Wool .................... 1 unit Ref. CL62102Features and ConnectionsTo Control UnitWiper forModular Tool StandRef. CL7899AdjustableCable CollectorRef. CC1001Ajustable Tool HolderBrass Wool(inside)Sponge350 mm60 mm80 mm100 mm130 mm130 mmpara manuales - color gris200 mmAdjust the tool holder angle tosuit the work position.Insert the cable into the clip and then insert into the cable collector. Do not leave the cable longer than necessary to reach the work area freely.The cable collector is flexible. It accompanies and adapts to the movements during thesoldering process.The wiper offers different ways to clean the cartridge tips. If desireduse the included sponge.4solder.remaining particles.Tapping Wiping SpongeKeep the sponge damp withThe integrated wiper offers different ways to clean the cartridge tips.50 mm100 mmAccessoriesStand extension cable Ref. A1286Length: 1.5mStand CableMaintenanceBefore carrying out maintenance or storage, always unplug the stand from the station and the tool.- Use a damp cloth to clean the stand. Alcohol can be used only when cleaning the metal parts.- Check periodically that the metal parts of the tool/stand are clean so that the station can check the tool’s status.- Periodically check all cables and tube connections.- Replace any defective or damaged parts. Use original JBC spare parts only.- Repairs should only be performed by a JBC authorized technical service.Clean periodically6Safety- Do not use the stand for any other purpose than soldering or rework.- The power cord must be plugged into approved bases. Be sure that it is properly grounded before use. When unplugging it, hold the plug, not the wire.- Do not work on electrically live parts.- The tool should be placed in the stand when not in use in order to activate the sleep mode. The soldering tip, the metal part of the tool and the stand may still be hot even when the station is turned off. Handle with care, including when adjusting the stand position.- Avoid the contact of flux with skin or eyes to prevent irritation.- Be careful with the fumes produced when soldering.- Keep your workplace clean and tidy. Wear appropriate protection glasses and gloves when working to avoid personal harm.- Utmost care must be taken with liquid tin waste which can cause burns.- This appliance can be used by children over the age of eight and also persons with reducedphysical, sensory or mental capabilities or lack of experience provided that they have been givenadequate supervision or instruction concerning use of the appliance and understand the hazards involved. Children must not play with the appliance.- Maintenance must not be carried out by children unless supervised.750 mm60 mm80 mm130 mm 130 mmpara manuales - color gris200 mmThis product should not be thrown in the garbage.In accordance with the European directive 2012/19/EU, electronic equipment at the end of its life must be collected and returned to an authorized recycling facility.of defective parts and labour.Warranty does not cover product wear or misuse. In order for the warranty to be valid, equipment must be returned, postage paid, to the dealer where it was purchased.0027181-300522APSStand for AP250 Manual-Feed Soldering Iron Ref.: AP-SF- Includes Sleep Mode - Total Net Weight 1462 g / 3.22 lb - Package Dimensions / Weight 342 x 155 x 120 mm / 2022 g (L x W x H) 13.46 x 6.10 x 4.72 in / 4.46 lbComplies with CE standards ESD safeSpecifications。

FSPL230D1中文资料

(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
元器件交易网
FSPL230R, FSPL230F
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current
This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of the vertical DMOS (VDMOS) structure. It is speciﬁcally designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices.

咖啡渣活性炭的制备及其去除含铜废水中Cu(Ⅱ)的性能研究

第43卷第1期(总第193期)2024年2月湿法冶金H y d r o m e t a l l u r g y ofC h i n a V o l .43N o .1(S u m.193)F e b .2024咖啡渣活性炭的制备及其去除含铜废水中C u(Ⅱ)的性能研究刘军,武宏(沈阳建筑大学市政与环境工程学院,辽宁沈阳 110168)摘要:研究了采用N a O H 活化焙烧咖啡渣制备咖啡渣活性炭并用于吸附去除含铜废水中的C u (Ⅱ)㊂通过S E M 和E D S 对咖啡渣活性炭进行表征,考察了废水初始p H ㊁C u (Ⅱ)初始质量浓度㊁吸附时间㊁吸附剂投加量对C u (Ⅱ)去除率的影响㊂结果表明:针对质量浓度50m g /L ㊁p H=6的50m L 模拟含铜废水,在咖啡渣活性炭投加量10m g ㊁温度25ħ,搅拌速率150r /m i n 条件下吸附9h ,C u (Ⅱ)去除率可达94.12%;L a n g m u i r 等温吸附模型和准二级动力学模型能较好地描述吸附过程㊂该吸附材料对废水中C u (Ⅱ)的吸附性能较好㊂关键词:含铜废水;咖啡渣;活性炭;焙烧;C u (Ⅱ);吸附;去除中图分类号:X 703;T Q 424.1 文献标识码:A 文章编号:1009-2617(2024)01-0093-06D O I :10.13355/j .c n k i .s f y j.2024.01.015收稿日期:2023-10-08基金项目:辽宁省教育厅项目(l n f w 202010)㊂第一作者简介:刘军(1964 ),女,硕士,教授,主要研究方向为工业水处理㊂通信作者简介:武宏(1998 ),女,硕士研究生,主要研究方向为工业水处理㊂E -m a i l :w u h o n g2186@163.c o m ㊂采矿㊁冶炼㊁化工㊁机械制造㊁金属加工㊁印染㊁钢铁制造㊁电镀等行业在生产过程中易产生高浓度含铜废水[1],而铜离子是一种重金属离子,会对人体健康和生态环境造成很大危害,因此去除废水中高浓度铜离子十分必要㊂目前,含铜废水的处理方法主要包括离子交换法㊁膜法㊁吸附法等[2-3]㊂离子交换法和膜法存在成本较高㊁易对环境造成二次污染等缺点[4];相对而言,吸附法因具有操作简单㊁成本较低等优点,越来越受到关注[5-6]㊂活性炭作为一种吸附剂,因具有发达的孔隙结构㊁较大的比表面积和超强的吸附性能等特点,能有效去除废水中的重金属离子,逐渐得到广泛应用[7-8]㊂咖啡渣是咖啡煮制后剩余的固体颗粒,随着咖啡销量增加,每年会产生大量咖啡渣,而目前对咖啡渣的处理主要以倾倒为主,不但污染环境还易造成资源浪费,因此,寻找一种有效的途径使咖啡渣变废为宝,对资源有效利用具有重要意义[9]㊂试验以N a O H 为活化剂,采用焙烧法制备了咖啡渣活性炭,考察了吸附时间㊁C u (Ⅱ)初始质量浓度㊁废水初始p H ㊁咖啡渣活性炭投加量对废水中C u (Ⅱ)去除率的影响,以期为咖啡渣提供一种资源化利用途径,同时为含铜工业废水的处理提供一种可选择的新型吸附材料㊂1 试验部分1.1 试验原料㊁试剂及设备模拟含铜废水:用1000m g /L 铜标准溶液(C u (N O 3)2㊃3H 2O )稀释至试验所需C u (Ⅱ)质量浓度㊂试验材料及试剂:咖啡渣;甲醇㊁硫酸㊁盐酸羟胺㊁枸橼酸钠㊁乙酸㊁乙酸钠㊁氢氧化钠,国药集团;新铜试剂,上海麦克林有限公司㊂以上试剂均为分析纯㊂水为蒸馏水㊂试验设备:V -5100型可见分光光度计(上海仪器有限公司),T F 1200-60型真空管式炉(昆山艾科讯机械有限公司),p H S -3C 型p H 计(上海仪电科学仪器股份有限公司),B G Z -246型电热鼓风干燥箱(上海博讯实业有限公司医疗设备厂),E L -104型电子分析天平(梅特勒-托利多仪器(上海)有限公司)㊂湿法冶金 2024年2月1.2 咖啡渣活性炭的制备1.2.1 咖啡渣的预处理用蒸馏水冲洗咖啡渣,去除灰分和水溶性物质;将咖啡渣放入电热鼓风干燥箱中,调至105ħ恒温干燥24h ;冷却后充分研磨过100目筛,备用㊂1.2.2 咖啡渣活性炭的制备准确称取预处理咖啡渣30g 于石英舟中,将石英舟放入真空管式炉中,用真空泵将真空管抽至真空度为-0.10M P a ;咖啡渣在300ħ下恒温碳化2h ,冷却后取出称重㊂碳化咖啡渣与N a O H 溶液(浓度为3m o l /L )按体积质量比30m L /1g 混合,之后进行磁力搅拌加热活化,设置温度80ħ,搅拌速度300r /m i n ㊂活化24h 后取出,冷却至室温,用蒸馏水反复冲洗活化产物至中性,用布氏漏斗抽滤后置于恒温鼓风干燥箱中,于105ħ下干燥4h ,冷却后得咖啡渣活性炭,保存备用㊂1.3 试验及分析方法取50m L 不同质量浓度的模拟含铜废水放入100m L 锥形瓶中,加入咖啡渣活性炭,用0.1m o l /L盐酸和0.1m o l /L N a O H 溶液调节p H ,在温度(25ʃ1)ħ㊁搅拌速度300r /m i n 条件下吸附至平衡㊂反应结束后,静置10m i n ,用0.45μm 亲水式针孔滤膜过滤,测定C u (Ⅱ)质量浓度,计算C u (Ⅱ)去除率(r )和平衡吸附量(qe )㊂r =ρ-ρeρ0ˑ100%;(1)qe =(ρ0-ρe )V m ;(2)qt (ρ0-ρt )V m ㊂(3)式中:ρ0 废水初始C u (Ⅱ)质量浓度,m g /L ;ρe 吸附平衡时废水中C u (Ⅱ)质量浓度,m g /L ;V 溶液体积,L ;m 咖啡渣活性炭投加量,g ;q e 吸附平衡时C u (Ⅱ)吸附量,m g /g ;qt 吸附t 时间时C u (Ⅱ)吸附量,m g /g ;ρt 吸附t 时间时废水中C u (Ⅱ)质量浓度,m g/L ㊂2 试验结果与讨论2.1 咖啡渣活性炭的表征2.1.1 S E M 表征利用S E M 分析吸附C u (Ⅱ)前㊁后咖啡渣活性炭的形貌,结果如图1所示㊂由图1(a )㊁(b )看出:咖啡渣活性炭表面呈大量不规则且发育良好的多孔结构,孔洞圆润光滑,比表面积较大,可提供大量吸附位点㊂由图1(c )㊁(d )看出:吸附C u (Ⅱ)后,咖啡渣活性炭孔径减小,变得粗糙无光泽,洞口有闭合趋势,说明C u (Ⅱ)被成功吸附到咖啡渣活性炭上㊂吸附前:a 放大500倍;b 放大1000倍㊂吸附后:c 放大500倍;d 放大1000倍㊂图1 吸附C u (Ⅱ)前㊁后咖啡渣活性炭的S E M 分析结果2.1.2 能谱(E D S)表征利用E D S 分析咖啡渣活性炭吸附C u (Ⅱ)前㊁后的元素种类与含量,结果如图2所示㊂图2 咖啡渣活性炭吸附C u (Ⅱ)前(a )㊁后(b )的E D S 能谱㊃49㊃第43卷第1期刘军,等:咖啡渣活性炭的制备及其去除含铜废水中C u (Ⅱ)的性能研究由图2(a )看出:咖啡渣活性炭由C ㊁O 和N a元素构成,其中C ㊁O 占90%以上,N a 是由添加的活化剂氢氧化钠引入㊂由图2(b )看出:吸附后咖啡渣活性炭中出现C u 元素,说明咖啡渣活性炭已经成功吸附C u (Ⅱ)㊂2.2 咖啡渣活性炭吸附含铜废水中的C u (Ⅱ)2.2.1 咖啡渣活性炭投加量的影响取质量浓度50m g/L 模拟含铜废水50m L ,在温度25ħ㊁搅拌速率150r /m i n ㊁废水p H=6条件下吸附9h ,考察咖啡渣活性炭投加量对吸附C u (Ⅱ)的影响,试验结果如图3所示㊂图3 咖啡渣活性炭投加量对吸附C u (Ⅱ)的影响由图3看出:咖啡渣活性炭投加量由1m g增至10m g,C u (Ⅱ)去除率由49.24%升至94.06%,这是由于随咖啡渣活性炭投加量增大,活性位点增多,存在更多的孔洞和官能团,有利于对C u (Ⅱ)的吸附,促进去除率提高;咖啡渣活性炭投加量继续增大,C u (Ⅱ)去除率略有下降,这是因为咖啡渣活性炭投加量过大而溶液体积不变,活性炭颗粒易发生聚集,使总表面积减小,仅会有部分官能团发挥吸附作用,造成C u (Ⅱ)去除率降低;C u (Ⅱ)吸附量随咖啡渣活性炭投加量增大而下降,由最初的1231m g /g 降至23.11m g /g,这是由于咖啡渣活性炭投加量增加,活性位点增多,而废水中C u (Ⅱ)量不变,使得单位质量吸附剂对C u (Ⅱ)吸附量减小,造成吸附剂利用率降低㊂综合考虑成本等因素,后续试验选择咖啡渣活性炭投加量为10m g㊂2.2.2 吸附时间的影响取质量浓度50m g /L ㊁p H=6模拟含铜废水50m L ,在咖啡渣活性炭投加量10m g ㊁温度25ħ㊁搅拌速率150r /m i n 条件下,考察吸附时间对咖啡渣活性炭吸附C u (Ⅱ)的影响,试验结果如图4所示㊂图4 吸附时间对咖啡渣活性炭吸附C u (Ⅱ)的影响由图4看出,随吸附时间延长,C u (Ⅱ)去除率和吸附量均逐渐升高,在9h 左右达到吸附平衡:在吸附前1h 内,咖啡渣活性炭对铜的吸附速率较快,C u (Ⅱ)去除率和吸附量快速升至61.78%和154.45m g /g㊂9h 后基本不变,此时C u (Ⅱ)去除率和吸附量分别为94.12%和235.3m g /g㊂吸附开始后1h 内,咖啡渣活性炭表面活性位点较多,与C u (Ⅱ)接触碰撞概率也较大,因此,C u (Ⅱ)去除率快速升高;但随吸附时间延长,吸附位点空位减少,导致对C u (Ⅱ)的吸附速率逐渐变缓,直至达吸附平衡㊂综合考虑,后续试验选择吸附时间为9h ㊂2.2.3 废水初始p H 的影响取质量浓度50m g /L 模拟含铜废水50m L ,在咖啡渣活性炭投加量10m g ㊁温度25ħ,搅拌速率150r /m i n 条件下吸附9h ,考察废水初始pH 对咖啡渣活性炭吸附C u (Ⅱ)的影响,试验结果如图5所示㊂由于含铜废水p Hȡ7时,O H -会与C u 2+反应产生C u (O H )2蓝色沉淀,因此,将废水初始p H 考察范围设为p H<7㊂图5 废水初始p H 对咖啡渣活性炭吸附C u (Ⅱ)的影响㊃59㊃湿法冶金2024年2月由图5看出:模拟含铜废水p H在2~5范围内,C u(Ⅱ)去除率和吸附量缓慢升高;p H由5升至6时,C u(Ⅱ)去除率和吸附量迅速升高㊂这是由于p H较低时,废水中存在高浓度流动性较强的H+,与C u(Ⅱ)相比,咖啡渣活性炭会更优先吸附H+[10-11],随p H升高,咖啡渣活性炭表面官能团去质子化程度提高,废水中H+浓度降低,不存在与C u(Ⅱ)的竞争吸附,C u(Ⅱ)去除率和吸附量持续升高[12]㊂综合考虑,选择废水初始p H=6㊂2.3吸附动力学采用准一级和准二级动力学模型对咖啡渣活性炭吸附C u(Ⅱ)的试验数据进行拟合㊂准一级动力学模型:l n(q e-q t)=l n q e-k1t;(4)准二级动力学模型:t q t=1k2q2e+tq e㊂(5)式中:q t 吸附t时间时的吸附量,m g/g;q e 吸附平衡时的吸附量,m g/g;k1 准一级动力学吸附速率常数,m i n-1;k2 准二级动力学吸附速率常数,m g/(g㊃m i n)㊂将试验数据带入上述公式,采用o r i g i n软件作图,拟合曲线如图6㊁7所示,拟合参数见表1㊂图6准一级动力学模型拟合曲线图7准二级动力学模型拟合曲线表1准一级、准二级动力学模型拟合参数ρ(C u(Ⅱ))/(m g㊃L-1)准一级动力学模型准二级动力学模型k1/m i n-1q e/(m g㊃g-1)R2k2/(m g㊃g-1㊃m i n-1)q e/(m g㊃g-1)R2 300.5410115.01820.84011.50ˑ10-4153.13940.9988 500.6562241.09470.80628.79ˑ10-5251.25630.9993由表1看出:在C u(Ⅱ)初始质量浓度分别为30㊁50m g/L时,准一级动力学模型的拟合相关系数分别为0.8401和0.8062,而准二级动力学模型的拟合相关系数为0.9988和0.9993,均接近于1㊂准二级动力模型拟合度相对较高,表明咖啡渣活性炭对C u(Ⅱ)的吸附过程是化学吸附[3]㊂2.4吸附等温线取不同质量浓度模拟含铜废水50m L,分别投加咖啡渣活性炭10m g,绘制咖啡渣活性炭对C u(Ⅱ)的吸附等温线,结果如图8所示㊂可以看出:随废水中C u(Ⅱ)初始质量浓度增大,C u(Ⅱ)吸附量不断升高㊂这是因为C u(Ⅱ)质量浓度较低时,咖啡渣活性炭的活性位点相对较多,有利于吸附C u(Ⅱ);随C u(Ⅱ)质量浓度增大,活性位点逐渐被占据,废水中有更多C u(Ⅱ)不能被吸附,吸附量先升高后基本保持不变,说明吸附达到平衡㊂图8吸附等温曲线㊃69㊃第43卷第1期刘军,等:咖啡渣活性炭的制备及其去除含铜废水中C u (Ⅱ)的性能研究 L a n gm u i r 等温吸附模型假设吸附剂表面均匀,并且相邻位置的吸附分子之间不存在相互作用;F r e u n d l i c h 等温吸附模型认为多层吸附参与了污染物的吸收[13-14]㊂采用上述2种模型对咖啡渣活性炭吸附C u (Ⅱ)的吸附数据进行拟合,拟合曲线如图9㊁10所示,拟合参数见表2㊂L a n gm u i r 等温吸附模型:ρe q e =ρe q m +1k L qm ;(6)F r e u n d l i c h 等温吸附模型:l g q e =l g k F +1n l g ρe ㊂(7)式中:q e 吸附平衡时吸附量,m g /g ;q m 理论最大吸附量,m g /g ;ρe 吸附平衡时废水中C u (Ⅱ)质量浓度,m g /L ;k L La n g m u i r 等温吸附常数,L /m g ;k F Fr e u n d l i c h 等温吸附常数,m g1-1/n ㊃L 1/n ㊃g -1;n F r e u n d l i c h 等温吸附强度相关常数㊂图9 L a n gm u i r等温吸附模型拟合曲线图10 F r e u n d l i c h 等温吸附模型拟合曲线表2 L a n gm u i r ㊁F r e u n d l i c h 等温吸附模型拟合参数L a n gm u i r 等温吸附模型F r e u n d l i c h 等温吸附模型qm /(m g ㊃g -1)k L/(L ㊃m g -1)R2k F/(m g 1-1/n ㊃L 1/n ㊃g -1)1/nR2291.551.08200.9998121.580.29170.8078由图9㊁10和表2看出:L a n gm u i r 等温吸附模型更能准确描述咖啡渣活性炭吸附C u (Ⅱ)的吸附等温线,推测C u (Ⅱ)在咖啡渣活性炭上的吸附过程以单层吸附为主;通过拟合所得C u (Ⅱ)饱和吸附量为291.55m g /g,与试验值更为接近㊂F r e u n d l i c h 等温吸附模型的1/n =0.2917,处于0.1~0.5范围内,说明有利反应进行,因此推断,咖啡渣活性炭吸附C u (Ⅱ)过程为多分子层吸附辅助㊂3 结论以咖啡渣为原料㊁N a O H 为活性剂可制备孔隙发达㊁官能团丰富的咖啡渣活性炭吸附材料㊂该材料制备成本低,可有效吸附废水中的C u (Ⅱ)㊂在模拟废水C u (Ⅱ)初始质量浓度50m g/L ㊁p H=6㊁体积50m L ㊁咖啡渣活性炭投加量10m g ㊁温度25ħ,搅拌速率150r /m i n 条件下吸附9h ,C u (Ⅱ)去除率可达94.12%㊂咖啡渣活性炭对C u (Ⅱ)的吸附过程适合用准二级动力学模型及L a n g m u i r 等温吸附模型描述㊂该吸附材料来源广泛,制备成本较低,有望成为治理含C u (Ⅱ)废水的一种新型吸附材料㊂参考文献:[1] D E N G R ,HU A N G D ,WA N J ,e ta l .C h l o r o -p h o s ph a t e i m p r e g n a t e db i o c h a r p r e p a r e d b y c o -p r e c i p i t a t i o nf o rt h e l e a d ,c a d m i u ma n d c o p p e r s y n e r g i c s c a v e n g i n g f r o ma q u e o u s s o l u t i o n [J ].B i o r e s o u r c e T e c h n o l o g y,2019,293.D O I :10.1016/j.b i o r t e c h .2019.122102.[2] 谭荣,龚杰,龚百川,等.用枯草芽孢杆菌吸附去除电镀废水中的铜[J ].湿法冶金,2022,41(1):40-46.[3] 任哲仪.磁性壳聚糖改性生物炭的制备及其去除水中铜和亚甲基蓝[D ].哈尔滨:东北农业大学,2021.[4] V U N A I N E ,K E N N E T H D ,B I S W I C K T.S yn t h e s i sa n d c h a r a c t e r i z a t i o no f l o w -c o s t a c t i v a t e dc a r b o n p r e p a r e d f r o m M a l a w i a n b a o b a b f r u i t s h e l l s b y H 3P O 4a c t i v a t i o n f o r r e m o v a l o fC u (Ⅱ)i o n s :e q u i l i b r i u m a n dk i n e t i c ss t u d i e s [J ].A p pl i e d W a t e r S c i e n c e ,2017,7(8):4301-4319.㊃79㊃湿法冶金 2024年2月[5] R U P AC ,A N U P AMA A ,K UMA RS A ,e ta l .A d s o r pt i o n o f h e a v y m e t a l i o n s b y v a r i o u s l o w -c o s t a d s o r b e n t s :a r e v i e w [J ].I n t e r n a t i o n a l J o u r n a l o f E n v i r o n m e n t a l A n a l yt i c a l C h e m i s t r y,2020,102(2).D O I :10.1080/03067319.2020.1722811.[6] MA H T A B A ,S O O L S ,S A N G -E U N O ,e ta l .M o d e l i n ga d s o r p t i o n k i n e t i c s o f t r i c h l o r o e t h yl e n e o n t o b i o c h a r s d e r i v e df r o m s o yb e a ns t o v e ra n d p e a n u ts h e l lw a s t e s [J ].E n v i r o n m e n t a lSc i e n c ea nd P o l l u t i o n Re s e a r c hI n t e r n a t i o n a l,2013,20(12):8364-8373.[7] R I V E R A -U T R I L L A J ,S ÁN C H E Z -P O L O M ,G ÓM E Z -S E R R A N O V ,e t a l .A c t i v a t e d c a r b o n m o d i f i c a t i o n s t oe n h a n c e i t sw a t e r t r e a t m e n ta p p l i c a t i o n s .a no v e r v i e w [J ].J o u r n a l o fH a z a r d o u sM a t e r i a l s ,2011,187(1/2/3):1-23.[8] I B R A H I M W M ,HA S S A N AF ,A Z A BYA.B i o s o r pt i o n o f t o x i ch e a v y m e t a l s f r o ma q u e o u ss o l u t i o nb y U l v al a c t u c a a c t i v a t e d c a r b o n [J ].E g y p t i a nJ o u r n a l o fB a s i c a n dA p pl i e d S c i e n c e s ,2016,3(3):241-249.[9] 产慧芳.咖啡渣负载纳米金属催化剂的制备及其在水处理中的应用研究[D ].广州:华南理工大学,2022.[10] A J MA L M ,R A O R A K ,A HMA D R ,e ta l .A d s o r pt i o n s t u d i e s o n c i t r u s r e t i c u l a t a (f r u i t p e e l o f o r a n g e ):r e m o v a l a n d r e c o v e r y o f N i (Ⅱ)f r o m e l e c t r o p l a t i n g w a s t e w a t e r [J ].J o u r n a lo f H a z a r d o u s M a t e r i a l s ,2000,79(1/2):117-131.[11] L IX ,T A N G Y ,X U A N Z ,e t a l .S t u d y o nt h e p r e pa r a t i o n o f o r a n g e p e e l c e l l u l o s ea d s o rb e n t sa n db i o s o r pt i o no fC d 2+f r o m a q u e o u s s o l u t i o n [J ].S e p a r a t i o n a n d P u r i f i c a t i o n T e c h n o l og y ,2007,55(1):69-75.[12] 严铁尉.废菌渣活性炭去除水中芳香族污染物及铜离子的效能研究[D ].太原:太原理工大学,2020.[13] Z H O U Y ,L I U X ,X I A N G Y ,e t a l .M o d i f i c a t i o no f b i o c h a rd e r i v e df r o m s a w d u s ta n di t sa p p l i c a t i o ni nr e m o v a lo f t e t r a c y c l i n ea n dc o p p e r f r o ma q u e o u ss o l u t i o n :a d s o r p t i o n m e c h a n i s m a n d m o d e l l i n g [J ].B i o r e s o u r c e T e c h n o l o g y,2017,245:266-273.[14] A L IN ,H A B I B E H S ,F A T E M E H G ,e ta l .S yn t h e s i so f w a l n u t s h e l lm o d i f i e dw i t h t i t a n i u md i o x i d e a n d z i n co x i d en a n o p a r t i c l e sf o r e f f i c i e n tr e m o v a lo f h u m i c a c i d f r o m a qu e o u s s o l u t i o n s [J ].J o u r n a l o fW a t e r a n d H e a l t h ,2016,14(6):989-997.P r e pa r a t i o no fA c t i v a t e dC a rb o n f r o mC o f f e eG r o u n d s a n d I t s P e r f o r m a nc e i n R e m o v i n g C u (Ⅱ)f r o mC o p p e r -c o n t a i n i n g Wa s t e w a t e r L I UJ u n ,WU H o n g(S c h o o l o f M u n i c i p a l a n dE n v i r o n m e n t a lE n g i n e e r i n g ,S h e n y a n g J i a n z h uU n i v e r s t i y ,S h e n y a n g 110168,C h i n a )A b s t r a c t :T h e p r e p a r a t i o no f a c t i v a t e d c a r b o n f r o mc o f f e e g r o u n d s b y a c t i v a t e d r o a s t i n g co f f e e g r o u n d s w i t hN a O H a n dt h ea d s o r p t i o na n dr e m o v a lo fC u (Ⅱ)f r o m w a s t e w a t e rc o n t a i n i n g c o p pe r w e r e s t u d i e d .T h ea c t i v a t e dc a r b o no fc of f e eg r o u n d sw a sch a r a c t e ri z e db y SE M a n dE D S .T h ee f f e c t so f i n i t i a l p H o f w a s t e w a t e r ,i n i t i a l m a s sc o n c e n t r a t i o n o f C u (Ⅱ),a d s o r p t i o nt i m ea n da m o u n t so f a d s o r b e n to nt h ea d s o r p t i o no fC u (Ⅱ)w e r ei n v e s t i ga t e d .T h er e s u l t ss h o w t h a tf o rt h e50m L s i m u l a t e dc o p p e r -c o n t a i n n i n g w a s t e w a t e rw i t h m a s s c o n c e n t r a t i o no f 50m g /La n d p H=6,u n d e r t h e o p t i m a l c o n d i t i o n s o f a c t i v a t e d c a rb o n f r o mc o f f e e g r o u nd s a m o u n t s o f 10m g ,te m pe r a t u r e of 25ħa n d s t i r r i ng s p e e do f 150r /m i na n d a d s o r p t i o n t i m e o f 9h ,t h eC u (Ⅱ)a d s o r p ti o nr e m o v a l r a t e c a nr e a c h 94.12%.L a n g m u i r i s o t h e r m a l a d s o r pt i o nm o d e l a n d q u a s i -s e c o n d -o r d e r k i n e t i cm o d e l c a nd e s c r i b e t h e a d s o r p t i o n p r o c e s sw e l l .T h e a d s o r pt i o n p e r f o r m a n c e o fC u (Ⅱ)i nw a s t e w a t e r i s g o o d .K e y w o r d s :c o p p e rw a s t e w a t e r ;c o f f e e g r o u n d s ;a c t i v a t e d c a r b o n ;r o a s t i n g ;C u (Ⅱ);a d s o r p t i o n ;r e m o v a l ㊃89㊃。

1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。

Output Characteristics
Output Voltage
+3.3V +5V +12V -5V -12V +5Vsb
Minimum Load
0.3A 1.0A 0.2A 0.0A 0.0A 0.0A
Maximum Load
12.12/20A 27/21.8A
13A 0.3A 0.8A 2.0 A
NEMKO (CB Report)
Input Characteristics
Input Range: 95~132/190~264V AC, Manual selection Frequency: 47~63Hz Input Current: 6A (RMS) @115V AC, 3A (RMS) @230V AC Inrush Current: 50A Max for 115V AC, 80A Max for 230V AC Cold start
*+5V and +3.3V total output not exceed 175W *When +3.3V is load on 20A, the +5V maximum load is 21.8A *When +3.3V is load on 12.12A, the +5V maximum load is 27A *+3.3V, +5V, and +12V total output not exceed 230W
for 1 second • Efficiency: 65% at minimum measured at nominal AC
main voltage and frequency with maximum load on all output • Standby input power/Green power: AC power not exceed 1 watt on stand-by mode • Rise Time: Less than 20ms on all output • Hold-up Time: 16.6ms minimum at 115V/60Hz; 20ms minimum at 230V/50Hz input voltage • Power Good Signal: Power on delay time 100 ms to 500 ms, off delay 1ms minimum (TTL and CMOS compatible) • Leakage Current: Not exceed 3.5mA at 115V AC, 60Hz • MTBF: 100,000 hours on maximum load at +25° C degree • Dimension (WxHxL): 150x86x140mm/6”x3.4”x5.5” inches
元器件交易网
Sparkle Power Inc.
A Leading Power Supply cturer
Web site:
FSP250-60GRE (For Pentium 4 and Athlon XP)
250 Watts ATX12V Switching Power Supply
Class B • Output over voltage, short circuit, and over current protection • 100% Hi-pot, ATE, and burn-in tested • Re-settable power shut down • Approved by UL 1950, CSA C22.2 Level 3, TUV EN60950,
Sparkle Power Inc. Los Angeles Office 17071 Green Drive City of Industry, CA 91745 TEL: 626-839-7180 FAX: 626-839-3395
Line Reg.
± 1% ± 1% ± 1% ± 2% ± 2% ± 1%
Ripple & Noise
50mV P-P 50mV P-P 120mV P-P 100mV P-P 120mV P-P 50mV P-P
Sparkle Power Inc. Colorado Office 1316 Indian Paintbrush Lane Longmont, CO 80503 TEL: 303-776-3281 FAX: 303-776-7645
Features
Specification
• Complied with ATX and ATX12V standard • High efficiency and reliability • Remote On/Off function • Internal 12V DC fan included • Noise Killer (Thermal fan speed control function) • Low noise and ripple • Complies with FCC part 15 subpart J Class B and CISPR 22
Load Reg. ± 5% ± 5% ± 5% ± 10% ± 10% ± 5%
Sparkle Power Inc. Main Office 1000 Rock Avenue San Jose, CA 95131 TEL: 408-519-8888 FAX: 408-519-9999 E-MAIL: info@
• Temperature Range: Operating 0° C ~ +25° C on full load; storage & shipping -20° C ~ +65° C
• Humidity: 90% on operating and 95% on storage • Dielectric Withstand: Input to frame ground 1800V AC