IGBT的MATLAB仿真

Implement insulated gate bipolar transistor(IGBT)
实现绝缘栅双极型晶体管
Library
Fundamental Blocks/Power Electronics
Description
The IGBT block implements a semiconductor device controllable by the gate signal.The IGBT is simulated as a series combination of a resistor R on,inductor L on,and a DC voltage source V f in series with a switch controlled by a logical signal(g>0or g=0)
IGBT模块是一个由门信号控制的半导体元器件。

IGBT可以视作一个电阻一个电感一个直流电压源一个门信号控制的开关串联
The IGBT turns on when the collector-emitter voltage is positive and greater than V f and a positive signal is applied at the gate input(g>0).It turns off when the collector-emitter voltage is positive and a0signal is applied at the gate input(g=0).
当集电极与发射极间的电压正偏并且大于V f，而且存在门信号(g>0)，IGBT打开。

当集电极与发射极间的电压正偏门信号为0(g=0)，其关闭。

The IGBT device is in the off state when the collector-emitter voltage is negative.Note that many commercial IGBTs do not have the reverse blocking capability.Therefore,they are usually used with an antiparallel diode.
当集电极与发射极间的电压反向偏置，IGBT模块处于关闭状态。

注意许多商用IGBT并没有反向阻断能力。

所以它们经常与混频二极管一同使用。

The IGBT block contains a series Rs-Cs snubber circuit,which is connected in parallel with the IGBT device(between terminals C and E).
IGBT模块包含一个串联的电阻电容缓冲电路，电阻电容与IGBT模块并联（在集电极和发射极之间）
The turnoff characteristic of the IGBT model is approximated by two segments.When the gate signal falls to0,the collector current decreases from I max to0.1I max during the fall time(T f),and then from0.1I max to0during the tail time(T t).
IGBT模块的关断特性近似有两段。

当门信号为0，集电极电流在下降时间由I max降低到0.1 I max，然后在尾端时间从0.1I max降到零。

Dialog Box and Parameters
IGBT模块对话框及其参数
Resistance R on模块内阻R on
The internal resistance R on,in ohms(Ω).The Resistance R on parameter cannot be set to0when
the Inductance L on parameter is set to0.
模块内阻R on以欧姆为单位，当电感L on设置为0时，模块内阻R on参数不能设置为0。

Inductance L on电感L on
The internal inductance L on,in henries(H).The Inductance Lon parameter is normally set to0except when the Resistance Ron parameter is set to0.
内部电感L on，以亨为单位。

除了模块内阻R on设置为0时，电感L on参数一般设置为0.
Forward voltage V f正向电压
The forward voltage of the IGBT device,in volts(V).
正向电压以伏为单位。

Current10%fall time10%电流下降时间
The current fall time T f,in seconds(s).This parameter is not modeled when the Enable use of ideal switching devices parameter of the Powergui block is selected.
电流下降时间，以秒为单位。

当勾选Powergui模块的理想的开关器件选择框，此参数没有模型可参考。

Current tail time电流拖尾时间
The current tail time T t,in seconds(s).This parameter is not modeled when the Enable use of ideal switching devices parameter of the Powergui block is selected.
电流拖尾时间T t,以秒为单位。

当勾选Powergui模块的理想的开关器件选择框，此参数没有模型可参考。

Initial current I c初始电流
You can specify an initial current flowing in the IGBT.It is usually set to0in order to start the simulation with the device blocked.
你可以指定流经IGBT的初始电流。

开始仿真时，如果模块被阻断，此参数经常设置为0.
If the Initial Current I C parameter is set to a value greater than0,the steady-state calculation considers the initial status of the IGBT as closed.Initializing all states of a power electronic converter is a complex task. Therefore,this option is useful only with simple circuits.
如果初始电流I c设置为大于0。

稳态计算时，认为IGBT关闭。

初始化电力电子变换器是一个复杂的任务。

所以，这个选项只在简单电路仿真中有效。

Snubber resistance Rs缓冲电路电阻Rs
The snubber resistance,in ohms(Ω).Set the Snubber resistance Rs parameter to inf to eliminate the snubber from the model.
缓冲电路电阻以欧姆为单位。

设置参数为inf,以消除模型的缓冲效果。

Snubber capacitance Cs缓冲电路电容Cs
The snubber capacitance in farads(F).Set the Snubber capacitance Cs parameter to0to eliminate the snubber,or to inf to get a resistive snubber.
缓冲电路电容以法拉为单位。

设置其为0或inf以消除缓冲作用。

Show measurement port显示测量端口
If selected,add a Simulink®output to the block returning the diode IGBT current and voltage.
如果选择此选项，添加一个Simulink®输出模块，返回IGBT二极管的电流和电压。

输入和输出
g
Simulink signal to control the opening and closing of the IGBT
一个Simulink信号来控制开启和关闭的IGBT
m
The Simulink output of the block is a vector containing two signals.You can demultiplex these signals by using the Bus Selector block provided in the Simulink library.
该Simulink模块的仿真输出是一个向量，包含两个信号。

这些信号可以通过使用Simulink库提供的总线选择器（Bus Selector block）块分离。

Assumptions and Limitations假设和局限性
The IGBT block implements a macro model of the real IGBT device.It does not take into account either the geometry of the device or the complex physical processes[1].
IGBT仿真模块真正实现了IGBT器件的宏模型。

它没有考虑到设备的几何形状或复杂的物理过程[1]。

Depending on the value of the inductance L on,the IGBT is modeled either as a current source (Lon>0)or as a variable topology circuit(Lon=0).The IGBT block cannot be connected in series with an inductor,a current source,or an open circuit,unless its snubber circuit is in use.
根据电感L on的值，IGBT建模作为一个电流源（Lon>0）或可变拓扑电路（Lon=0）。

IGBT 模块无法串联一个电感，电流源，也不能开路，除非它是使用缓冲电路。

Use the Powergui block to specify either continuous simulation or discretization of your electrical circuit containing IGBT blocks.When using a continuous model,the ode23tb solver with a relative tolerance of1e-4is recommended for best accuracy and simulation speed.
可以使用Powergui模块指定连续模拟或离散化包含IGBT模块的电路。

使用连续模型时，推荐最佳的精度和仿真速度为ode23tb算法，相对误差为1e-4。

The inductance Lon is forced to0if you choose to discretize your circuit.
on
The power_igbtconv example illustrates the use of the IGBT block in a boost DC-DC converter.The IGBT is switched on and off at a frequency of10kHz to transfer energy from the DC source to the load(RC).The average output voltage(V R)is a function of the duty cycle(α)of the IGBT switch: power_igbtconv（matlab命令窗口输入open power_igbtconv打开案例）案例说明IGBT模块在DC-DC升压变换器的使用。

IGBT的开关频率在10千赫，从直流电源到负载进行能量传递（RC）。

输出的平均电压（V R）是IGBT的开关的一个周期函数（α）：
V R=V dc/(1−α)
In our example,α=0.5so that the theoretical value of V R is200V,assuming no voltage drop across the diode and the IGBT.
在我们的例子中，α=0.5，V R的理论值为200V，假设没有二极管和IGBT间没有电压降。

Run the simulation and observe the inductor current(I L),the IGBT collector current(I C),the diode current(I D), the IGBT device collector-emitter voltage(V CE),and the load voltage(V R).
运行仿真并观察电感电流（I L），IGBT的集电极电流（I C），二极管的电流（I D），该器件IGBT集电极-发射极电压（V CE），与负载电压（V R）。

The load voltage(197V)is slightly lower than the theoretical value(200V)mainly because of the forward voltage(V f)of the diode(0.8V)and of the IGBT(V f=1V).
负载电压（197V）略低于理论值（200V）主要是因为正向电压（V F）的二极管（0.8V）和IGBT（V F=1V）。

References参考文献
[1]Mohan,N.,T.M.Undeland,and W.P.Robbins,Power Electronics:Converters,Applications,and Design, John Wiley&Sons,Inc.,New York,1995.。