Methods for depositing tungsten layers employing a
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专利名称：Methods for depositing tungsten layers employing atomic layer deposition
techniques
发明人：Ken Kaung Lai,Ravi Rajagopalan,Amit
Khandelwal,Madhu Moorthy,Srinivas
Gandikota,Joseph Castro,Aygerinos V.
Gelatos,Cheryl Knepfler,Ping Jian,Hongbin
Fang,Chao-Ming Huang,Ming Xi,Michael X.
Yang,Hua Chung,Jeong Soo Byun
申请号：US11038592
申请日：20050119
公开号：US20060009034A1
公开日：
20060112
专利内容由知识产权出版社提供专利附图：
摘要：In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
申请人：Ken Kaung Lai,Ravi Rajagopalan,Amit Khandelwal,Madhu Moorthy,Srinivas
Gandikota,Joseph Castro,Aygerinos V. Gelatos,Cheryl Knepfler,Ping Jian,Hongbin Fang,Chao-Ming Huang,Ming Xi,Michael X. Yang,Hua Chung,Jeong Soo Byun 地址：Milpitas CA US,Sunnyvale CA US,Santa Clara CA US,Santa Clara CA US,Santa Clara CA US,Fremont CA US,Redwood City CA US,Fremont CA US,San Jose CA US,Mountain View CA US,Hsin Chu TW,Palo Alto CA US,Palo Alto CA US,San Jose CA US,Cupertino CA US 国籍：US,US,US,US,US,US,US,US,US,US,TW,US,US,US,US
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