国际会议海报Poster模板
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Scanning near-field optical lithography (SNOL) of organic semiconductors
Dan Credgington1, Oliver Fenwick1, Ana Charas2, Jorge Morgado2, Klaus Suhling3 and Franco Cacialli1
We thank: the EPSRC; the RS; the EC for funding of the RTN THREADMILL (EU-contract: MRTN-CT-2006-036040); the European Science Foundation EUROCORES Programme SONS with supplementary funds from EPSRC and the EC Sixth Framework Programme (ERAS-CT-2003-980409); as well as the EC Seventh Framework Programme (FP7/20072013) under grant agreement N. 212311 (ONE-P).
BTOx
5µm
1 0
8
X
6
nm
4 2 0 0 50 1 00
nm 150
200
Photoinitiator
Non-uniform shrinkage during baking
• Uniform films shrink ~50% during baking. • Height and width of nano-sized dots measured before and after baking
75nm
A
Incident laser
Biblioteka Baidu
nm
5 0
60nm
10 5 0 -5 0
B
(Right) 3-dimensional representation of the optical field strength in a thin film placed below the tip of an apertured SNOL probe. Optical intensity distribution is calculated with the Bethe-Bouwkamp model (λ = 325nm, aperture diameter 50nm, film thickness 20nm and film refractive index 1.73 + 0.067i.)
40
UV activation r-BTOx
300
Sample 1 Sample 2 Sample 3 Sample 4 Sample 5
Baked Height (nm)
30
Sample 1 Sample 2 Sample 3 Sample 4 Sample 5
Baked FWHM (nm)
(Right, top) An array of pillars defined in r-BTOx from a 200nm film using a 60nm probe aperture (Right, bottom) cross section through the pillars, typical feature size of around 500nm. ~500nm
200 1 50
200
20
X
100
10
X
nm
1 00 50 0 -50 0 1 2 3 4 5
5µm
0
µm 6
7 8 9 1 0 1 1
0
0
100
200 Unbaked FWHM (nm)
300
400
0
10
20
30
40
50
Unbaked Height (nm)
F8Ox
• Oxetane side chains (analogue to BTOx). • Blue-emitting. • Photoluminescence preserved during lithography. • Under-exposure results in positioned features (area C). poorly
IN SUMMARY, scanning near-field optical lithography is a powerful tool for patterning materials on the nano-scale. We have investigated the resolution achievable with our system, as applied to the patterning of PPV, and found that a feature size of around 50nm are possible. We have also shown that, in addition to individual small structures, creating large arrays and more complicated designs is equally feasible using SNOL. Finally, we have shown that a variety of other materials are suitable for patterning via this technique, including BTOx and F8Ox, which undergo a very different reaction to PPV.
PXT UV activation PPV
PPV
1µm
Contacts
SNOL
Optical fibre probe
• The SNOL probe: a sharpened, metal-coated optical fibre with a sub-wavelength aperture defined at the apex • 325nm HeCd laser launched into the fibre.
Scanning near-field optical lithography (SNOL) has been shown to provide a versatile method for patterning materials over lengths well below the classical diffraction limit. We apply this technique thin films of organic semiconductors. These optically and electronically active materials are chemically tuneable, flexible, and can often be processed directly from solution. For applications in photonic devices and nano-electronics, achieving lithographic resolution on the nano-scale is vital. Using a home-built SNOL system, we demonstrate how thin films of the widely studied polymer poly(para-phenylene-vinylene) (PPV), and the cross-linkable oxetane derivatives F8Ox and BTOx can be patterned to any predetermined design.
55nm
A copolymer based around the common green-emitting polymer F8BT. • Cross-linking through oxetane sidechains activated via a photoacid initiator. • Cross-linked reticulated network (rBTOx) forms. • Development in THF removes the unexposed polymer.
PPV structures fabricated via a Wessling-type precursor process using SNOL to convert poly(p-xylene tetrahydrothiophenium chloride) (PXT) in-situ into conjugated PPV. Unexposed PXT removed using methanol
Linear fits to data give :
Wb Wub 46nm H b 0.7 H ub 3nm
W = width (FWHM) H = height b = baked ub = unbaked
→ 30% vertical shrinkage → Outer layers collapse a fixed 20-25 nm around the edge (not dependent on lateral dimension)
Sub-wavelength aperture
x y z
-5
100
200 nm
300
400
• Structure of 65,000 pixels. • Minimum resolution 60 nm.
Log (Intensity)
→ Integrity of aperture maintained.
(Left) Arrays of pillars defined in r-F8Ox from a ~200 nm film using a 60 nm probe aperture. Exposure decreases from A (200 ms) to B (50 ms) to C (20 ms). (Right) Confocal photoluminescence images of the same areas.
(Left) Dots drawn in PPV from a 15nm film, using a 50nm probe aperture. (Right) Zoom and cross-section through this feature showing FWHM of approximately 55nm.
Quartz tuning fork
(Left) AFM scan of a features drawn in PPV on a variety of length scales, from a ~15nm thick precursor film using a 50nm near-field probe.
1
UCL Department of Physics and Astronomy and London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH, UK. 2 Instituto de Telecomunicações, Instituto Superior Técnico, Av. Rovisco Pais 1, P-1049-001 Lisboa, Portugal. 3 Department of Physics, King’s College London, The Strand, London WC2R 2LS, UK.
Exposure time (ms) 50 100 200 500 1000
X
Thin film
BTOx
200nm
Poly{2,7-(9,9-dioctylfluorene-alt-benzothiadiazole)-co-1,4-(2,5-bis-(methyl-4’-(6-(3-methyloxetan-3-yl)methoxy)hexyloxy)benzene)}
A
• Optical near-field generated around the aperture
10µm
B
200nm
Probe tip
• Contact is maintained using shear-force feedback
Sample
nm
10
(Below) Cross-sections of the finest features.
Dan Credgington1, Oliver Fenwick1, Ana Charas2, Jorge Morgado2, Klaus Suhling3 and Franco Cacialli1
We thank: the EPSRC; the RS; the EC for funding of the RTN THREADMILL (EU-contract: MRTN-CT-2006-036040); the European Science Foundation EUROCORES Programme SONS with supplementary funds from EPSRC and the EC Sixth Framework Programme (ERAS-CT-2003-980409); as well as the EC Seventh Framework Programme (FP7/20072013) under grant agreement N. 212311 (ONE-P).
BTOx
5µm
1 0
8
X
6
nm
4 2 0 0 50 1 00
nm 150
200
Photoinitiator
Non-uniform shrinkage during baking
• Uniform films shrink ~50% during baking. • Height and width of nano-sized dots measured before and after baking
75nm
A
Incident laser
Biblioteka Baidu
nm
5 0
60nm
10 5 0 -5 0
B
(Right) 3-dimensional representation of the optical field strength in a thin film placed below the tip of an apertured SNOL probe. Optical intensity distribution is calculated with the Bethe-Bouwkamp model (λ = 325nm, aperture diameter 50nm, film thickness 20nm and film refractive index 1.73 + 0.067i.)
40
UV activation r-BTOx
300
Sample 1 Sample 2 Sample 3 Sample 4 Sample 5
Baked Height (nm)
30
Sample 1 Sample 2 Sample 3 Sample 4 Sample 5
Baked FWHM (nm)
(Right, top) An array of pillars defined in r-BTOx from a 200nm film using a 60nm probe aperture (Right, bottom) cross section through the pillars, typical feature size of around 500nm. ~500nm
200 1 50
200
20
X
100
10
X
nm
1 00 50 0 -50 0 1 2 3 4 5
5µm
0
µm 6
7 8 9 1 0 1 1
0
0
100
200 Unbaked FWHM (nm)
300
400
0
10
20
30
40
50
Unbaked Height (nm)
F8Ox
• Oxetane side chains (analogue to BTOx). • Blue-emitting. • Photoluminescence preserved during lithography. • Under-exposure results in positioned features (area C). poorly
IN SUMMARY, scanning near-field optical lithography is a powerful tool for patterning materials on the nano-scale. We have investigated the resolution achievable with our system, as applied to the patterning of PPV, and found that a feature size of around 50nm are possible. We have also shown that, in addition to individual small structures, creating large arrays and more complicated designs is equally feasible using SNOL. Finally, we have shown that a variety of other materials are suitable for patterning via this technique, including BTOx and F8Ox, which undergo a very different reaction to PPV.
PXT UV activation PPV
PPV
1µm
Contacts
SNOL
Optical fibre probe
• The SNOL probe: a sharpened, metal-coated optical fibre with a sub-wavelength aperture defined at the apex • 325nm HeCd laser launched into the fibre.
Scanning near-field optical lithography (SNOL) has been shown to provide a versatile method for patterning materials over lengths well below the classical diffraction limit. We apply this technique thin films of organic semiconductors. These optically and electronically active materials are chemically tuneable, flexible, and can often be processed directly from solution. For applications in photonic devices and nano-electronics, achieving lithographic resolution on the nano-scale is vital. Using a home-built SNOL system, we demonstrate how thin films of the widely studied polymer poly(para-phenylene-vinylene) (PPV), and the cross-linkable oxetane derivatives F8Ox and BTOx can be patterned to any predetermined design.
55nm
A copolymer based around the common green-emitting polymer F8BT. • Cross-linking through oxetane sidechains activated via a photoacid initiator. • Cross-linked reticulated network (rBTOx) forms. • Development in THF removes the unexposed polymer.
PPV structures fabricated via a Wessling-type precursor process using SNOL to convert poly(p-xylene tetrahydrothiophenium chloride) (PXT) in-situ into conjugated PPV. Unexposed PXT removed using methanol
Linear fits to data give :
Wb Wub 46nm H b 0.7 H ub 3nm
W = width (FWHM) H = height b = baked ub = unbaked
→ 30% vertical shrinkage → Outer layers collapse a fixed 20-25 nm around the edge (not dependent on lateral dimension)
Sub-wavelength aperture
x y z
-5
100
200 nm
300
400
• Structure of 65,000 pixels. • Minimum resolution 60 nm.
Log (Intensity)
→ Integrity of aperture maintained.
(Left) Arrays of pillars defined in r-F8Ox from a ~200 nm film using a 60 nm probe aperture. Exposure decreases from A (200 ms) to B (50 ms) to C (20 ms). (Right) Confocal photoluminescence images of the same areas.
(Left) Dots drawn in PPV from a 15nm film, using a 50nm probe aperture. (Right) Zoom and cross-section through this feature showing FWHM of approximately 55nm.
Quartz tuning fork
(Left) AFM scan of a features drawn in PPV on a variety of length scales, from a ~15nm thick precursor film using a 50nm near-field probe.
1
UCL Department of Physics and Astronomy and London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH, UK. 2 Instituto de Telecomunicações, Instituto Superior Técnico, Av. Rovisco Pais 1, P-1049-001 Lisboa, Portugal. 3 Department of Physics, King’s College London, The Strand, London WC2R 2LS, UK.
Exposure time (ms) 50 100 200 500 1000
X
Thin film
BTOx
200nm
Poly{2,7-(9,9-dioctylfluorene-alt-benzothiadiazole)-co-1,4-(2,5-bis-(methyl-4’-(6-(3-methyloxetan-3-yl)methoxy)hexyloxy)benzene)}
A
• Optical near-field generated around the aperture
10µm
B
200nm
Probe tip
• Contact is maintained using shear-force feedback
Sample
nm
10
(Below) Cross-sections of the finest features.