Advanced topics on RF amplitude and phase detection for lowlevel RF systems
Advanced Topics in Data Science
Advanced Topics in Data Science Data science is a rapidly evolving field that encompasses a wide range of advanced topics. In this article, we will explore some of the most cutting-edge and complex concepts in data science, including machine learning, deep learning, natural language processing, and big data.Machine learning is a crucial aspect of data science that involves the development of algorithms that can learn from and make predictions or decisions based on data. This advanced topic involves a wide range of techniques, including supervised learning, unsupervised learning, and reinforcement learning. Supervised learning involves training a model on labeled data, while unsupervised learning involves finding patterns and relationships in unlabeled data. Reinforcement learning, on the other hand, involves training a model to make decisions in a dynamic environment in order to maximize some notion of cumulative reward.Deep learning is a subfield of machine learning that focuses on the development of artificial neural networks, which are inspired by the structure of the human brain. These networks are capable of learning to represent data in multiple layers of increasingly abstract representations, allowing them to excel at tasks such as image and speech recognition, natural language processing, and reinforcement learning. Deep learning has been a major driver of progress in fields such as computer vision and natural language processing, and has led to major breakthroughs in areas such as autonomous vehicles, medical imaging, and language translation.Natural language processing (NLP) is a branch of artificial intelligence that focuses on the interaction between computers and humans through natural language. NLP enables computers to understand, interpret, and generate human language in a valuable way. NLP involves a wide range of techniques and methods,including text mining, sentiment analysis, language modeling, and machine translation. It is an essential technology for many applications, including chatbots, virtual assistants, and language translation services.Big data refers to the massive volumes of data that are so large and complex that traditional data processing applications are inadequate to deal with them. This advanced topic in data science involves the collection, storage, and analysis of large and complex data sets using advanced computing and statistical techniques. Big data has a wide range of applications, including predictive analytics, risk modeling, fraud detection, and personalized marketing. It is an essential component of modern data science and is crucial for understanding and making decisions based on large and complex data sets.In conclusion, advanced topics in data science encompass a wide range of complex and cutting-edge concepts, including machine learning, deep learning, natural language processing, and big data. These topics are crucial for understanding and analyzing large and complex data sets, and have a wide range of applications in fields such as computer vision, speech recognition, language translation, predictive analytics, and more. As the field of data science continues to evolve, it is important for professionals to stay abreast of these advanced topics in order to remain competitive in the industry.。
LabVolt系列Radar活动目标培训系统(Radar跟踪培训系统的附加件)8112504(809
LabVolt Series DatasheetRadar Active Target Training System (add-on to the Radar Tracking Training System)8112504 (8097-40)* The product images shown in this document are for illustration purposes; actual products may vary. Please refer to the Specifications section of each product/item for all details. Festo Didactic reserves the right to change product images and specifications at any time without notice.Festo Didactic en12/2023Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt SeriesTable of ContentsGeneral Description_________________________________________________________________________________3 List of Equipment___________________________________________________________________________________3 List of Manuals____________________________________________________________________________________4 Table of Contents of the Manual(s)____________________________________________________________________4 Equipment Description______________________________________________________________________________4Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt SeriesGeneral DescriptionRadar Active Target (RAT) Training System is used in conjunction with the three previous subsystems to train students in the principles and scenarios of EW. This is a truly unique system that places real-time, safe, and unclassified EW demonstrations into the hands of students. The RAT Training System consists of an active jamming pod trainer, an elaborate set of accessories, and a comprehensive student manual.* WARNING: This equipment is subject to export control. Please contact your sales representative to know if this product can be imported in your region.List of EquipmentQty Description Model number1Electronic Warfare (Reference Book) _______________________________________________ 580343 (32254-80)1Radar in an Active Target Environment (Student Manual) ______________________________ 580425 (38546-00)1Horn Antenna ___________________________________________________________________ 581847 (9535-00)1Radar Jamming Pod Trainer Support ________________________________________________ 581916 (9595-10)1Radar Jamming Pod Trainer ________________________________________________________ 581949 (9608-10)1Power Supply (Radar Electronic Warfare) ___________________________________________ 8095962 (9609-10)1Accessories for the Radar Active Target Training System ________________________________581985 (9690-C0)Figure 13. Effect of barrage noise jamming produced by the jamming pod trainer of the RAT Training System as observed on the Radar PPI display.The jamming pod trainer is a Self-Screening Jammer (SSJ) target that can perform direct or modulated noise jamming (see Figure 13) as well as repeater jamming. It includes a remote controller to select the type of jamming and set the jammingparameters. The jamming pod trainer and the included accessories are designed for use with the Radar to implement real EW situations. This provides an effective means of introducing students to a real-time jamming situation that necessitates a response, that is, the use of an appropriate ECCM to prevent losingtrack of the target.Stealth accessories in the RAT Training System allow reduction of the jamming pod trainer’s radar cross section.Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt Series•••••••••••••List of ManualsDescriptionManual numberElectronic Warfare (User Guide) ______________________________________________________580343 (32254-80)Radar in an Active Target Environment (Workbook) ______________________________________580425 (38546-00)Radar Training System (User Guide) ___________________________________________________________8112390Table of Contents of the Manual(s)Radar in an Active Target Environment (Workbook) (580425 (38546-00))1-1 Familiarization with the Radar Jamming Pod Trainer 1-2 Spot Noise Jamming and Burn-Through Range 1-3 Frequency Agility and Barrage Noise Jamming 1-4 Video Integration and Track-On-Jamming 1-5 Antennas in EW: Sidelobe Jamming and Space Discrimination 2-1 Deception Jamming Using the Radar Jamming Pod Trainer 2-2 Range Gate Pull-Off 2-3 Stealth Technology: The Quest for Reduced RCS 3-1 Deceptive Jamming Using Amplitude-Modulated Signals 3-2 Cross-Polarization Jamming 3-3 Multiple-Source Jamming Techniques 4-1 Chaff Clouds 4-2 Chaff Clouds used as DecoysEquipment DescriptionHorn Antenna 581847 (9535-00)The Horn Antenna is used to perform experiments related to a variety of topics, such as FM-CW radar, antenna gain, andmicrowaves. When used in conjunction with the Radar Antenna, the Horn Antenna allows separate transmission and reception of RF signals. It is also used in certain EW demonstrations.SpecificationsParameterValueGain 14.5 dBDistanceBetween the transmitting and receiving horn antennas: 40 cm (16 in).Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt SeriesRadar Jamming Pod Trainer Support581916 (9595-10)This support is a mast designed to support the Radar Jamming Pod Trainerwhen it is used to perform electronic jamming against the Radar. The largebase of the mast provides stable support of the Radar Jamming PodTrainer. Soft pads attached under the base allow the mast to glide softlyover the surface of the Target Positioning System.Radar Jamming Pod Trainer581949 (9608-10)The Radar Jamming Pod Trainer is a Self-Screening Jammer (SSJ)target in a compact enclosure. It is designed to be placed on theTarget Positioning System to electronically attack the RadarTraining System by masking the target echo signal with noise orcausing either range or angle deception. The Radar Jamming PodTrainer mainly consists of an RF signal source, a variableattenuator, transmitting and receiving horn antennas, a signalrepeater, an amplitude modulator, and a remote controller.The RF signal source is a Voltage-Controlled Oscillator (VCO) whose frequency range is approximately twice that of the Radar Training System. The VCO frequency can be adjusted to perform radar jamming using spot noise. The VCO can also be modulated in frequency, either internally or externally, to produce barrage noise jamming. The variable attenuator decreases the VCO signal level before it is sent to the transmitting horn antenna. This allows the amount of noise introduced in the victim radar (i.e., the Radar) to be adjusted. The maximum transmitted power is low, thereby providing safe operation in a laboratory environment.The receiving horn antenna intercepts the pulse signal transmitted by the Radar. The repeater, which consists of an amplifier and a programmable delay line, amplifies and delays the intercepted signal. By transmitting this signal back to the radar and gradually increasing the delay, the range gate in the radar tracking system can be captured and pulled away from the target echo, thereby producing range deception. This technique is usually referred to as Range Gate Pull Off (RGPO).The amplitude modulator consists of an electronic RF switch which can be controlled either internally or externally. It is used to modulate the amplitude of the VCO output signal or repeated signal (on-off modulation). The amplitude modulator allows implementation of AM noise jamming and asynchronous inverse gain jamming. It also allows blinking jamming when a second transmitting horn antenna is connected to an auxiliary RF outputRadar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt Serieson the Radar Jamming Pod Trainer. These three jamming techniques are used to cause angle deception in theradar tracking system.The remote controller is used to operate the Radar Jamming Pod Trainer. Communication between the remote controller and the Radar Jamming Pod Trainer is through an infra-red link. Buttons and an LCD display on theremote controller provide access to the various functions of the Radar Jamming Pod Trainer.The Radar Jamming Pod Trainer can be tilted 90° to perform cross-polarization jamming, another techniqueused to cause angle deception in the radar tracking system. It can also be used with accessories to demonstrateother jamming techniques such as sidelobe jamming, formation jamming, and jammer illuminated chaff (JAFF),as well as the fundamentals of stealth technology.The Radar Jamming Pod Trainer operates from unregulated DC voltages. A cable allows the Radar Jamming Pod Trainer to be connected to a standard unregulated DC power bus (available on the Power Supply / AntennaMotor Driver and the Power Supply).* WARNING: This equipment is subject to export control. Please contact your sales representative to know if this product can be imported in your region.SpecificationsParameter ValueFrequency Range8 to 12 GHzOutput Power-30 to +10 dBm, adjustable in 1 dB stepsInternal Frequency ModulationWaveform Selectable, 980-Hz synthesized triangular wave or 30-kbps pseudo-random bit sequenceDeviation Selectable, 50 MHz, 1, 2, 3, and 4 GHzFrequency Modulation InputVoltage Range-10 to +10 V (to cover 8 to 12 GHz)Modulating Frequency Range DC to 130 kHzImpedance10 kΩInternal Amplitude ModulationType On-OffFrequency Selectable, 0.25, 0.5, 1, 2, 3, 4, 5, 140, 141, 142, 143, 144, 145, 146, 147, and 148 HzAmplitude Modulation Input (on-off modulation)Level TTLDelay Time / Transition Time150 ns / 50 nsAuxiliary RF OutputFrequency Range8 to 12 GHzOutput Power-30 to +10 dBm, adjustable in 1 dB stepsImpedance50 ΩSignal Repeater (Programmable Delay Line)Maximum Input Power+10 dBmRange of Delay 2.66 to 5.60 ns (40 to 84.2 cm), adjustable in 7 steps of 0.42 ns (6.3 cm)RGPO Walk-Off Time Selectable, 0.8, 1.6, 4.0, and 8.0 sPhysical CharacteristicsDimensions (H x W x D)150 x 170 x 440 mm (5.9 x 6.7 x 17.3 in)Net Weight 3.4 kg (7.5 lb)Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt SeriesPower Supply (Radar Electronic Warfare)8095962 (9609-10)The Power Supply can be installed under the surface of theTarget Positioning System to provide power to the RadarJamming Pod Trainer. It provides the same unregulated DCvoltages as the Power Supply / Antenna Motor Driver through amulti-pin connector located on its top panel. This connector isidentical to the power connector used on several other modulesof the system and has the same pin configuration. SpecificationsParameter ValuePower RequirementCurrent 1.5 A (for 120 V)Service Installation Standard single-phase ac outletUnregulated DC Outputs-25 V typ. -1.0 A max.; +11 V typ. -1.5 A max.; +25 V typ.-1.0 A max.Line Input Protection 2 A / 1 A circuit breakerUnregulated DC Output Protection 1.0 A and 1.5 A circuit breakerPhysical CharacteristicsDimensions (H x W x D)112 x 330 x 300 mm (4.4 x 13 x 11.8 in)Net Weight 6.7 kg (14.8 lb)Accessories for the Radar Active Target Training System581985 (9690-C0)The Accessories for the Radar Active Target Training Systemcontain a chaff cloud simulation device, a multifunction stand, atriangular (stealth) shield to cover the Radar Jamming PodTrainer, Radiation Absorbing Material (RAM), a set of microwavecomponents and cables, and a sample of actual chaff.Radar Active Target Training System (add-on to the Radar Tracking Training System), LabVolt Series Reflecting the commitment of Festo Didactic to high quality standards in product, design, development, production, installation, and service, our manufacturing and distribution facility has received the ISO 9001 certification.Festo Didactic reserves the right to make product improvements at any time and without notice and is not responsible for typographical errors. Festo Didactic recognizes all product names used herein as trademarks or registered trademarks of their respective holders. © Festo Didactic Inc. 2023. All rights reserved.Festo Didactic SERechbergstrasse 373770 DenkendorfGermanyP. +49(0)711/3467-0F. +49(0)711/347-54-88500Festo Didactic Inc.607 Industrial Way WestEatontown, NJ 07724United StatesP. +1-732-938-2000F. +1-732-774-8573Festo Didactic Ltée/Ltd675 rue du CarboneQuébec QC G2N 2K7CanadaP. +1-418-849-1000F. +1-418-849-1666。
高频实力强劲,Advanced Amplifiers Solid State RF Amplifie
Instruction Manual Including Quick Start GuideAdvanced AmplifiersSolid State RF Amplifier SystemAA-1M6G-301 MHz - 6.0 GHz, 30 Watt, 45dB MinTable of ContentsSAFETY INSTRUCTIONS (3)SPECIFICATIONS (4)ELECTRICAL SPECIFICATIONS: 50Ω, 25°C (4)ENVIRONMENTAL CHARACTERISTICS (4)MECHANICAL SPECIFICATIONS (4)OPERATING INSTRUCTIONS & GENERAL INFORMATION (5)INTRODUCTION (5)INCOMING INSPECTION (5)RF & AC CABLE CONNECTION (5)RF TURN ON PROCEDURE (5)RF TURN OFF PROCEDURE (5)DECLARATION OF CE CONFORMITY (6)LIMITED WARRANTY (6)CONTACT INFORMATION (6)FRONT & REAR PANEL DESCRIPTIONS (7)FRONT PANEL VIEW (7)REAR PANEL VIEW (8)SYSTEM OUTLINE VIEW (9)SAFETY INSTRUCTIONSBEFORE USING THIS EQUIPMENTRead this manual and become familiar with safety markings and instructions.Inspect unit for any sign of external damage. Do not use this equipment if there is physical damage or missing parts. Verify the input AC voltage to the main power supply.For a system with a digital controller option – DO NOT USE OR CONNECT a PoE enabled ethernet switch to a system. Our digital controller does not support PoE connection and will cause permanent damages to a controller unit. INTENDED USEThis product is intended for general laboratory use in a wide variety of industrial and scientific applications.RF OUTPUT LOAD & PROPER GROUNDING REQUIREDThe RF output connector must be connected to a load before the AC switch is turned on.AC & RF power must be off before disconnecting the output load or other components.The main power source to the equipment must have an uninterrupted safety ground that has sufficient size to the power cord.REPAIR & MAINTENANCEAll repair or maintenance work must be performed by a factory authorized technician in order to extend the operating life of this equipment and not to void any outstanding warranty.FORCED AIR COOLINGThis equipment requires forced air cooling. All air inlets and outlets must be cleared and free of blocking at all time. Insufficient air flow will result in damaged equipment.SAFETY SYMBOLSThis symbol is marked on the equipment when it is necessary for the user to refer to the manual forimportant safety information. This symbol is indicated in the Table of Contents to assist in locatingpertinent information.Dangerous voltages are present. Use extreme care.The caution symbol denotes a potential hazard. Attention must be given to the statement to preventdamage, destruction or harm.This symbol indicates protective earth terminal.SPECIFICATIONSELECTRICAL SPECIFICATIONS: 50Ω, 25°CParameter Specification NotesBand A BOperating Frequency Band 1 - 1000 MHz 1 - 6 GHz Band switching @ 15 mS Max Power Output @ Psat30 Watt Min / 50 Watt Typ CW or Pulse Power Gain45 dB Min0dBm or less for rated Pout Power Gain Flatness 4.0 dB p-p Max Constant input power Gain Adjustment Range20 dB Min Local or remote Input Return Loss-10 dB Max2-Tone Intermodulation (IMD)-30 dBc Typ35dBm/Tone, Δ = 1MHz Harmonics<-20 dBc Typ At rated Pout Spurious-60 dBc Max Non-harmonics Operating Voltage100 - 240 VAC47 - 63 HzPower Consumption500 Watt Max At rated PoutInput Power Protection+10 dBm Max1Load VSWR Protection 6 : 1: Max2Foldback @ preset limit Sample Port (optional)-40 dB N-Female1 Units with optional digital monitor and control, for basic units <10 Sec without damage2 Units with optional digital monitor and control, for basic units <1 minute at rated PoutENVIRONMENTAL CHARACTERISTICSParameter Specification Notes Operating Ambient Temperature0 to +50 °CStorage Temperature-40 to +85 °CRelative Humidity up to 95 %Non-condensing Altitude3000 metersShock & Vibration Normal transport3MECHANICAL SPECIFICATIONSParameter Specification Notes Dimensions W x H x D430 x 88 x 700 mm2U, excluding handles Weight12 Kg.RF Connectors Input/Output/Sample N-Female Front or rear panel Interface Connector9-Pin D-Sub Rear panelAC Power IEC 60320-C14Or equivalent Cooling Built in Fan Cooling Variable speedOPTIONAL: Digital Monitor & Control (DMC) FWD, REV, VSWR, GAIN, ALC, V & I, TEMP, Optional Safety Interlock (INT)Ethernet RJ-45 TCP/IP, RS422/485, USBOptional GPIB InterfaceOpen=STBY/Short=RFONIEEE rear panelBNC-F rear panelOPERATING INSTRUCTIONS & GENERAL INFORMATION INTRODUCTIONAdvanced Amplifiers is an amplifier equipment and services company supporting commercial and government organizations worldwide.Headquartered in San Diego, California, the company utilizes its global network of resources to effectively serve and support customer requirements.As a unique original equipment manufacturer of power amplifiers ranging from 10KHz to 40GHz with various output power levels for CW & pulse testing applications, we can also fully support custom designs and manufacturing requirements for both small and large volume procurements. We bring decades of combined experience in the RF field for numerous applications including and not limited to, EMI/EMC, communications, and various commercial and industry standards.With our in-house capabilities and fully equipped testing facilities, Advanced Amplifiers is committed to provide the best in RF products with industry leading quality and lead times.INCOMING INSPECTIONInspect unit for any sign of external damage. Do not use this equipment if there is physical damage or missing parts. Inspect all front and rear panel connectors for damage. Inspect fans and their airways for any damage or blockings. For a unit with a digital controller option, the USB and ethernet interface and commands list is in the second part of the manual.RF & AC CABLE CONNECTIONRF Input and Output connectors are outlined in the specifications table. Use the standard AC cable that was supplied by the manufacturer or higher power rating cables than the manual specifies. Refer to the front and rear panel description page for the location of RF and AC connectors.For a system with a digital controller option – DO NOT USE OR CONNECT a PoE enabled ethernet switch to a system. Our digital controller does not support PoE connection and will cause permanent damages to a controller unit. RF TURN ON PROCEDUREConnect RF input to an RF Pulse Generator and Gating signal. Connect a suitable load for the power rated and continuous operation to the output connector. Turn on the AC switch, display will show STANDBY. Optionally, connect the unit to a digital control Software or Ethernet connection. Set the RF generator to nominal 0dBm and set the desired frequency in the specified range. Select Gain or ALC and set to the desirable output power level then press the ONLINE button. Use the front panel LCD gain adjust or the remote function to adjust the output power on the power meter and the LCD screen to desired levels.Refer to Appendix-1 for detailed operating instructions of the local and remote controller.RF TURN OFF PROCEDUREDecrease the RF drive from the RF generator to below -20dBm and press STANDBY on the LCD or via the control software. Turn off AC switch on the front panel. Disconnect any unnecessary cable connections.DECLARATION OF CE CONFORMITYWe, Advanced Amplifiers Corp, declare under our sole responsibility that the product to which this declaration relates is in conformity with the following standard(s) or other normative document(s):Council Directive 98/37/EC on the Safety of Machinery DirectiveCouncil Directive 2014/35/EC on Low Voltage Equipment SafetyLIMITED WARRANTYAdvanced Amplifiers warrants that goods delivered hereunder, at the time of delivery, will be free from defects in workmanship and material and will conform to the requirements of the purchase order. Seller’s liability hereunder shall be limited to the repair or replacement of defective goods F.O.B. factory of which Seller is modified in writing by Buyer within three (3) years following delivery thereof to Buyer, and in no event will Seller be liable for incidental, special or consequential damages. (Note: One (1) year warranty for moving parts such as fans and power supplies). The foregoing warranty is in lieu of all other warranties express or implied (except as to title), including any implied warranty of merchantability or suitability for purpose or against infringement..CONTACT INFORMATIONPlease send all inquiries to:Advanced Amplifiers10401 Roselle StreetSan Diego, CA 92121WEB: EMAIL: ****************************COPYRIGHT & TRADEMARKSCopyright 2022 Advanced Amplifiers, All rights reserved. All other trademarks and brand names are the property of their respective proprietors.FRONT & REAR PANEL DESCRIPTIONS FRONT PANEL VIEWNo.Title Function1RF SAMPLE A N Female, RF SAMPLE Connector.SAMPLE PORT MUST BE TERMINATED AT ALL TIME2RF SAMPLE B N Female, RF SAMPLE Connector.SAMPLE PORT MUST BE TERMINATED AT ALL TIME30dBm INPUT N Female, 0dBm INPUT Connector.4FAULT LED System Fault LED: Turn ON an LED when Over-Temp, Ext. Shutdown. 5POWER SWITCH System Power Switch.6LCD DISPLAY 4” Touch screen LCD Display, System Control LCD Panel.REAR PANEL VIEWNo.Title Function1AC POWER CONNECTOR AC Power Input 100 ~ 240VAC, 47/63Hz, IEC60320-14 Connector.2RS-422System RS-422 Communication / Gating Signal Female 9-Pin D-Sub Connector. P1 TX- P6 N/CP2 TX+ P7 N/CP3 RX+ P8 N/CP4 RX- P9 N/CP5 GND (RS-422)3GPIB IEEE-488 GPIB Interface Connector, Female.4DEBUG System Controller Debugging Female Connector. Port access requires factory authorization5USB USB Communication Connector, Type A Female.6ETHERNET Ethernet Communication Female Connector, RJ-45.For a system with a digital controller option – DO NOT USE OR CONNECT a PoE enabled ethernet switch to a system. Our digital controller does not support PoE connection and will cause permanent damages to a controller unit.7INTERLOCK BNC Female, Safety Interlock ConnectorInterlock Close Circuit : Normal operationInterlock Open Circuit : RF Off operation8GND Frame Ground.950Ω OUTPUT N Female, 50Ω OUTPUT Connector. 10Cooling FAN System Outlet Cooling FAN.SYSTEM OUTLINE VIEW。
new phytologist awaiting referee scores
new phytologist awaiting referee scores As a newly submitted manuscript to the peer-reviewed journal New Phytologist, we are eagerly awaiting the referee scores.This manuscript represents a significant contribution to thefield of plant physiology, specifically in the area of photosynthesis research. 。
The manuscript begins with a detailed introduction to the importance of photosynthesis in the conte某t of global climate change, highlighting the potential impacts of risingtemperatures and CO2 levels on plant productivity. We then describe the methods used to grow and stress the plants,including measurements of photosynthetic rates, pigment content, and gene e某pression. We also performed detailed analyses ofthe chloroplasts, the organelles responsible for photosynthesis, using advanced imaging techniques. 。
超快光学超快光谱
Chopper
Chopped excite pulse train
The excite pulse periodically changes the sample absorption seen by the probe pulse.
Probe pulse train
Lock-in detector
What’s going on in spectroscopy measurements
The excite pulse(s) excite(s) molecules into excited states, which changes the medium’s absorption coefficient and refractive index.
DT(t) / T0 Da0 exp(–t /tex) L
0
Delay, t
Modeling excite-probe measurements
(cont’d)
3
Excite transition
2 Probe transition
1
0
More complex decays occur if intermediate states are populated or if the motion is complex. Imagine probing an intermediate transition, whose states temporarily fill with molecules on their way back down to the ground state:
Ultrafast laser spectroscopy: Why
Most events that occur in atoms and molecules occur on fs and ps time scales because the length scales are very small.
RF simulation
The Designer’s Guide Community downloaded from Introduction to RF Simulation and its ApplicationKen KundertDesigner’s Guide Consulting, Inc.Version 2, 23 April 2003Radio-frequency (RF) circuits exhibit several distinguishing characteristics that makethem difficult to simulate using traditional Spice transient analysis. The various exten-sions to the harmonic balance and shooting method simulation algorithms are able toexploit these characteristics to provide rapid and accurate simulation for these circuits.This paper is an introduction to RF simulation methods and how they are applied tomake common RF measurements. It describes the unique characteristics of RF circuits,the methods developed to simulate these circuits, and the application of these methods.Published in the IEEE Journal of Solid-State Circuits, vol. 34, no. 9 in September 1999. Lastupdated on May 12, 2006 8:08 am. Errors were found in (61), (62) and (64) that have been cor-rected in this version. You can find the most recent version at .Contact the author via e-mail at ken@.Permission to make copies, either paper or electronic, of this work for personal or classroom useis granted without fee provided that the copies are not made or distributed for profit or commer-cial advantage and that the copies are complete and unmodified. To distribute otherwise, to pub-lish, to post on servers, or to distribute to lists, requires prior written permission.Copyright©2006, Kenneth S. Kundert – All Rights Reserved1 of 47Introduction to RF Simulation and its Application The RF Interface2 of 47The Designer’s Guide Community 1The RF InterfaceWireless transmitters and receivers can be conceptually separated into baseband and RFsections. Baseband is the range of frequencies over which transmitters take their inputand receivers produce their output. The bandwidth of the baseband section determinesthe underlying rate at which data can flow through the system. There is a considerableamount of signal processing that occurs at baseband designed to improve the fidelity ofthe data stream being communicated and to reduce the load the transmitter places on thetransmission medium for a particular data rate. The RF section of the transmitter isresponsible for converting the processed baseband signal up to the assigned channel andinjecting the signal into the medium. Conversely, the RF section of the receiver isresponsible for taking the signal from the medium and converting it back down to base-band.With transmitters there are two primary design goals. First, they must transmit a speci-fied amount of power while consuming as little power as possible. Second, they mustnot interfere with transceivers operating on adjacent channels. For receivers, there arethree primary design goals. First, they must faithfully recover small signals. They mustreject interference outside the desired channel. And, like transmitters, they must be fru-gal power consumers.1.1Small Desired Signals Receivers must be very sensitive to detect small input signals. Typically, receivers areexpected to operate with as little as 1 μV at the input. The sensitivity of a receiver is lim-ited by the noise generated in the input circuitry of the receiver. Thus, noise is a impor-tant concern in receivers and the ability to predict noise by simulation is very important.As shown in Figure 1, a typical superheterodyne receiver first filters and then amplifiesits input with a low noise amplifier or LNA. It then translates the signal to the intermedi-ate frequency or IF by mixing it with the first local oscillator or LO. The noise perfor-mance of the front-end is determined mainly by the LNA, the mixer, and the LO. Whileit is possible to use traditional S PICE noise analysis to find the noise of the LNA, it isuseless on the mixer and the LO because the noise in these blocks is strongly influencedby the large LO signal.The small input signal level requires that receivers must be capable of a tremendousamount of amplification. Often as much as 120 dB of gain is needed. With such highgain, any coupling from the output back to the input can cause problems. One importantreason why the superheterodyne receiver architecture is used is to spread that gain overseveral frequencies to reduce the chance of coupling. It also results in the first LO beingFIGURE 1 A coherent superheterodyne receiver’s RF interface.IQ(1*10^-12/2*50)w=(1*10^-11)mW=-110dBm1uV:Characteristics of RF Circuits Introduction to RF Simulation and its Application3 of 47The Designer’s Guide Community at a different frequency than the input, which prevents this large signal from contaminat-ing the small input signal. For various reasons, the direct conversion or homodyne archi-tecture is a candidate to replace the superheterodyne architecture in some wirelesscommunication systems [1,16,47,48]. In this architecture the RF input signal is directlyconverted to baseband in one step. Thus, most of the gain will be at baseband and theLO will be at the same frequency as the input signal. In this case, the ability to deter-mine the impact of small amounts of coupling is quite important and will require carefulmodeling of the stray signal paths, such as coupling through the substrate, betweenpackage pins and bondwires, and through the supply lines.1.2Large Interfering SignalsReceivers must be sensitive to small signals even in the presence of large interfering sig-nals, often known as blockers. This situation arises when trying to receive a weak or dis-tant transmitter with a strong nearby transmitter broadcasting in an adjacent channel.The interfering signal can be 60-70 dB larger than the desired signal and can act toblock its reception by overloading the input stages of the receiver or by increasing theamount of noise generated in the input stage. Both of these problems result if the inputstage is driven into a nonlinear region by the interferer. To avoid these problems, thefront-end of a receiver must be very linear. Thus, linearity is also an important concernin receivers. Receivers are narrowband circuits and so the nonlinearity is quantified bymeasuring the intermodulation distortion. This involves driving the input with two sinu-soids that are in band and close to each other in frequency and then measuring the inter-modulation products. This is generally an expensive simulation with S PICE becausemany cycles must be computed in order to have the frequency resolution necessary tosee the distortion products.1.3Adjacent Channel InterferenceDistortion also plays an important role in the transmitter where nonlinearity in the out-put stages can cause the bandwidth of the transmitted signal to spread out into adjacentchannels. This is referred to as spectral regrowth because, as shown in F igure 2 andFigure 3 on page 5, the bandwidth of the signal is limited before it reaches the transmit-ter’s power amplifier or PA, and intermodulation distortion in the PA causes the band-width to increase again. If it increases too much, the transmitter will not meet itsadjacent channel power requirements. When transmitting digitally modulated signals,spectral regrowth is virtually impossible to predict with S PICE . The transmission ofaround 1000 digital symbols must be simulated to get a representative spectrum, andthis combined with the high carrier frequency makes use of transient analysis impracti-cal.2Characteristics of RF CircuitsRF circuits have several unique characteristics that are barriers to the application of tra-ditional circuit simulation techniques. Over the last decade, researchers have developedmany special purpose algorithms that overcome these barriers to provide practical simu-lation for RF circuits, often by exploiting the very characteristic that represented thebarrier to traditional methods [28].污染线性度要求高丆降低互调影响Transmitter 的非线性导致频谱扩展Introduction to RF Simulation and its Application Characteristics of RF Circuits4 of 47The Designer’s Guide Community2.1Narrowband SignalsRF circuits process narrowband signals in the form of modulated carriers. Modulatedcarriers are characterized as having a periodic high-frequency carrier signal and a low-frequency modulation signal that acts on either the amplitude, phase, or frequency of the carrier. For example, a typical mobile telephone transmission has a 10-30 kHz modula-tion bandwidth riding on a 1-2 GHz carrier. In general, the modulation is arbitrary,though it is common to use a sinusoid or a simple combination of sinusoids as test sig-nals.The ratio between the lowest frequency present in the modulation and the frequency ofthe carrier is a measure of the relative frequency resolution required of the simulation.General purpose circuit simulators, such as S PICE , use transient analysis to predict thenonlinear behavior of a circuit. Transient analysis is expensive when it is necessary toresolve low modulation frequencies in the presence of a high carrier frequency becausethe high-frequency carrier forces a small timestep while a low-frequency modulationforces a long simulation interval.Passing a narrowband signal though a nonlinear circuit results in a broadband signalwhose spectrum is relatively sparse, as shown in Figure 3. In general, this spectrum con-sists of clusters of frequencies near the harmonics of the carrier. These clusters take theform of a discrete set of frequencies if the modulation is periodic or quasiperiodic, and acontinuous distribution of frequencies otherwise.RF simulators exploit the sparse nature of this spectrum in various ways and with vary-ing degrees of success. Steady-state methods (Section 4.1 on page 14) are used whenthe spectrum is discrete, and transient methods (Section 4.3 on page 22) are used whenthe spectrum is continuous.2.2Time-Varying Linear Nature of the RF Signal PathAnother important but less appreciated aspect of RF circuits is that they are generallydesigned to be as linear as possible from input to output to prevent distortion of themodulation or information signal. Some circuits, such as mixers, are designed to trans-late signals from one frequency to another. To do so, they are driven by an additionalsignal, the LO, a large periodic signal the frequency of which equals the amount of fre-quency translation desired. For best performance, mixers are designed to respond in aFIGURE 2 A digital direct conversion transmitter’s RF interface.Serial toParallelLPFs PA sin(ωLO t )cos(ωLO t )in IQ本页已使用福昕阅读器进行编辑。
precalculus知识点总结
precalculus知识点总结Precalculus is an essential branch of mathematics that serves as a bridge between algebra, geometry, and calculus. This subject is crucial for students preparing to undertake advanced courses in mathematics, physics, engineering, and other technical fields. In this precalculus knowledge summary, we will cover important topics such as functions, trigonometry, and analytic geometry.FunctionsOne of the fundamental concepts in precalculus is that of functions. A function is a relationship between two sets of numbers, where each input is associated with exactly one output. In other words, it assigns a unique value to each input. Functions can be represented in various forms, such as algebraic expressions, tables, graphs, and verbal descriptions.The most common types of functions encountered in precalculus include linear, quadratic, polynomial, rational, exponential, logarithmic, and trigonometric functions. Each type of function has its own unique characteristics and properties. For example, linear functions have a constant rate of change, while quadratic functions have a parabolic shape.Functions can be manipulated by performing operations such as addition, subtraction, multiplication, division, composition, and inversion. These operations can be used to create new functions from existing ones, or to analyze the behavior of functions under different conditions.TrigonometryTrigonometry is the study of the relationships between the angles and sides of triangles. It plays a crucial role in precalculus and is essential for understanding periodic phenomena such as oscillations, waves, and circular motion.The primary trigonometric functions are sine, cosine, and tangent, which are defined in terms of the sides of a right-angled triangle. These functions have various properties, such as periodicity, amplitude, and phase shift, which are important for modeling and analyzing periodic phenomena.Trigonometric functions can also be extended to the entire real line using their geometric definitions. They exhibit various symmetries and periodic behaviors, which can be visualized using the unit circle or trigonometric graphs. Additionally, trigonometric identities and equations are essential tools for simplifying expressions, solving equations, and proving theorems.Analytic GeometryAnalytic geometry is a branch of mathematics that combines algebra and geometry. It deals with the use of algebraic techniques to study geometric shapes and their properties. Inprecalculus, this subject is primarily concerned with the study of conic sections, such as circles, ellipses, parabolas, and hyperbolas.The equations of conic sections can be derived using geometric constructions, or by using algebraic methods such as completing the square, factoring, and manipulating equations. These equations can then be used to describe the geometric properties of conic sections, such as their shape, size, orientation, and position.Furthermore, analytic geometry also involves the study of vectors and matrices, which are important tools for representing and manipulating geometric objects in higher dimensions. Vectors can be used to represent points, lines, and planes in space, while matrices can be used to perform transformations such as rotations, reflections, and scaling.Other TopicsIn addition to the core topics mentioned above, precalculus also covers other important concepts such as complex numbers, polar coordinates, sequences and series, and mathematical induction. Complex numbers are used to extend the real number system to include solutions to equations that have no real roots. They have applications in various fields such as electrical engineering, quantum mechanics, and signal processing.Polar coordinates provide an alternative way of describing points in the plane using radial distance and angular direction. They are particularly useful for representing periodic and circular motion, as well as for simplifying certain types of calculations in calculus.Sequences and series are ordered lists of numbers that have a specific pattern or rule. They can be finite or infinite, and their sums can be used to represent various types of mathematical and physical phenomena. For example, arithmetic sequences are used to model linear growth or decline, while geometric series are used to model exponential growth or decay.Finally, mathematical induction is a powerful method for proving statements about positive integers. It is based on the principle that if a certain property holds for a base case, and if it can be shown that it also holds for the next case, then it holds for all subsequent cases as well. This method is widely used in various areas of mathematics, such as number theory, combinatorics, and discrete mathematics.ConclusionIn conclusion, precalculus is a diverse and rich subject that covers a wide range of mathematical concepts and techniques. It provides students with the necessary foundation to tackle more advanced topics in calculus and beyond. By mastering the core topics of precalculus, students will be well-equipped to understand and apply advanced mathematical methods in various technical fields. Whether it be functions, trigonometry, analytic geometry, or any other topic, a solid understanding of precalculus is essential for success in higher mathematics.。
有限元分析——谐响应
Sinusoidally varying, at known frequencies. Phase angle ψ allows multiple, out-of-phase loads to be applied. Defaults to zero. All applied loads are assumed to be harmonic, including temperatures and gravity.
Nature of Harmonic Loads
•
Imaginary
Training Manual
DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1
Harmonic Analysis
… Definition & Purpose
Harmonic analysis is used in the design of: •
Training Manual
DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1 DYNAMICS 8.1
Power Supply Rejection for Common-Source Linear RF Amplifiers Theory and Measurements
Power Supply Rejection for Common-Source Linear RF Amplifiers:Theory and MeasurementsJason T. Stauth and Seth R. SandersUniversity of California, Berkeley, CA, 94720, USAAbstract — This paper describes an estimation of the distortion products that arise from power supply noise mixing with the RF signal in a common-source amplifier configuration. Classical Volterra-series system analysis is extended to use on a multiple-input system and the second order supply ripple sidebands are predicted relative to the magnitudes of the input signal and supply ripple. The analysis is shown to be in good agreement with BSIM3v3 simulation and lab measurements in 180nm CMOS: ripple sidebands match within 1-2dBc for a wide range of output power.Index Terms — supply rejection, voltage ripple, DC-DC converter, power amplifier, dynamic supply, adjacent channel power ratio, power supply noiseI. I NTRODUCTIONThe output spectrum of RF amplifiers is highly constrained by FCC and performance requirements, leading to tight intermodulation distortion (IMD) specifications, particularly in RF power amplifier components [1]. Traditional distortion analysis has focused on near band spectral-regrowth caused by interaction of the input signal with amplifier and component nonlinearities [1,2]. However, an additional source of spectral leakage comes from noise or voltage ripple on the power supply. As demonstrated in Fig. 1, spectral energy injected from the power supply can mix with the RF carrier and be upconverted to near-band frequencies. If the RF amplifier has insufficient power supply rejection (PSR), supply noise can degrade system performance and even cause violations of the transmit spectral mask [3]. It is important to understand the interaction of supply noise with RF amplifiers for successful design of the wireless system.Power supply noise may be caused by a number of factors including coupling of RF and analog signals to the supply through bondwires and other parasitics, thermal noise in bandgap references, and digital switching noise. An additional source of supply noise is voltage ripple from switching regulators.Switching regulators have been used for polar modulation of nonlinear power amplifiers (PAs), [4], and dynamic voltage biasing of linear PAs [5]. To meet strict adjacent channel leakage ratio (ACLR) requirements, it is important to understand the effect of supply ripple on the PA output spectrum.spectrum.This work presents an analysis of the intermodulation distortion between the power supply and the RF signal for linear transconductance RF amplifiers. Calculations based on Volterra series formulation will be described that can predict low-order intermodulation terms. The analysis extends classical distortion analysis to a multi-port formulation. Specifically, this analysis is an adaptation of the method proposed by Chua in [6] and described by Wambacq and Sansen in [7]. The calculations are based on nonlinearities extracted from BSIM3v3 models, but result in expressions that are simple enough to use for hand design. Measurements are compared to hand analysis for a common source amplifier in 180nm CMOS. Section II presents the multi-input Volterra analysis procedure. Section III describes system nonlinearities and presents Volterra operators for the supply intermodulation sidebands. Sections IV and V compare hand analysis to simulation and experimental results.II.T HEORY OF M ULTIPLE-I NPUT S UPPLYI NTERMODULATIONA. Single-Input (Two-Port) Volterra AnalysisVolterra series can be used to analyze systems with frequency dependent nonlinearities. As long as the system is weakly nonlinear, only a few terms of the series are needed to predict important distortion phenomenon. Witha Volterra series representation, the time domain output of a nonlinear system for an input, x(t), can be written as [7]: ∑∞==0))(()(n n t x F t y ,(1)where. ...)()...(),...,(...))((111n n nn n d d t x t x h t x F ττττττ−−=∫∫∞∞−∞∞−(2)In Equation (2), the ),(1n n h ττL are known as the Volterra kernels of the system.The time domain Volterra kernels can be used in the frequency domain as Volterra operators to perform circuit calculations [6],[8]. In this case the Volterra operators are frequency dependent transfer functions,),,,(21n w w w H L , that capture the phase and amplitude response of the circuit for a given set of frequencies. B. Multiple-Input Volterra AnalysisThe extension of 2-port Volterra analysis to multiple-input systems can be done by including both direct terms and cross terms. Volterra kernels for multiple-input systems become tensors, resulting in complicated hand calculations [6],[7]. However, hand calculation is still manageable for the low-order kernels.The frequency domain Volterra series formulation for a system with 2 input ports and a single output may be written as:..),,(),,()(),(...),,(),()(...),,(),()(221212211221113232222131321211+++⋅++++++++=S S w w w H S S w w w H S S w w H S w w w G S w w G S w G S w w w F S w w F S w F So c b a c b a b a c b a b a a c b a b a a o o o o o o o o o(3)Here F i and G i are the conventional input-output Volterra operators for each of the two input terminals. The H 11 operator describes the second order cross term. H 21 and H 12 describe the third order cross terms. The operator “◦” represents the frequency domain operation of the transfer function on the signal/s at the appropriate frequencies. This notation is borrowed from [9].A three-port amplifier, such as that shown in Fig. 1, has an input port (that may be single ended or differential), a supply port, and a ground reference. In this case F 1 would correspond to the forward gain at w 0, G 1 would correspond to the forward supply noise gain at w S , H 11 would correspond to the first sideband at w O ±w S , and H 12 and H 21 would correspond to the third order sidebands at w O ±2w S and 2w O ±w S .III. C HARACTERIZATION OF NONLINEARITIESTo study the effect of supply noise on RF amplifiers, thesystematic nonlinearities are identified. For the CMOS device used in this treatment, the main sources of supply-carrier intermodulation are the transconductance, output conductance and drain-bulk junction capacitance. The body-effect transconductance, gate-source and gate-drain capacitance may also cause distortion depending on thebias point and configuration of the device.In (5), the non-symmetric transimpedance operator, H 11, is solved as:11111221011)(2(21),(−++++⋅+−=X sb sb L L sbS L jw C jw go g g G F C jw go G gmo w w H . (6)Here F 1 and G 1 are the first order operators, and w sb is the sideband frequency. The first order operators are evaluated at the corresponding input signal frequency: 10101101)()(−+++−=X L LL jw C jw go g g gm w F , (7)and1111)()(−+++=X S S L Lx S L jw C jw go g g g w G . (8)In (6), upconversion of supply ripple results from second order nonlinearity of the output conductance, drain junction capacitance, and dependence of the forward transconductance on v ds . Source inductance degenerates the amplifier, linearizing the forward gain and reducing the ripple sidebands. The source-degenerated Volterra operators may be calculated by extending the nodal analysis to include the source terminal. In simple cases, this calculation may also be done with feedback analysis. The series-series feedback factor is calculated as the transfer function between the load current and source voltage:(SL X L y g y g f ⋅+−=,(9)where y x ~(jwL X )-1 , and y s ~(jwL S )-1. The supply ripple sidebands are reduced by a factor of approximately 1+F 1(w sb )f(w sb ), neglecting second order effects and the body transconductance. Since these effects may be important in certain circumstances, the extended nodal analysis approach is recommended for highest accuracy.IV. C OMPARISON TO S IMULATIONTo verify the distortion analysis, a reference design was created in 180nm CMOS. A least-squares polynomial expansion was used to match the coefficients in (3) to BSIM3v3 parameters extracted from Spectre simulation. The polynomial coefficients were used in Matlab to estimate the Volterra operators and the resulting distortionproducts.Fig. 7 Photograph of the die bonded on the gold-plated testboard. Die area is 1.4mmX1.4mm.Fig. 9 Comparison of measured and calculated fundamentaland ripple sideband power; 50mV supply ripple at 10MHz. Fig. 10 Comparison of measured and calculated ripplesideband in decibles-below carrier.A photo of the test IC bonded to the board is shown in Fig. 7. Fig. 9 compares measured results to hand analysis. Trends in spectral leakage due to supply ripple are in good agreement with hand analysis. However, absolute power measurements for the fundamental and ripple sidebands are shifted by ~2-3dB from hand predictions. The discrepancy is caused by losses in the output passives, connectors and cabling that are not included in simulation.A more important comparison, the sideband power referenced in decibels-below-carrier (dBc) to the fundamental, is shown in Fig. 10. In this case, sideband power is seen to match hand analysis within 2dB over awide (30dB) output power range. This demonstrates that hand analysis can have reasonable success in predicting the effect of supply noise relative to the output power of the amplifier.VI.C ONCLUSIONA method of predicting the interaction of power supply noise with the RF carrier was presented and compared to measured data. Classical 2-port Volterra-series distortion analysis was extended to a multi-port formulation to predict supply ripple sidebands. Relative measurement of ripple sideband power showed agreement within 1-2dBc of prediction. This analysis provides a tool to study the power supply rejection of RF amplifiers. Such analysis can help RF designers predict output spectrum, and may be valuable when spectral leakage and ACPR specifications are of critical importance.A CKNOWLEDGEMENTThe authors would like to thank Panasonic and the U.C. Micro program for financial support and Dr. Ali Niknejad for his helpful comments and advice.R EFERENCES[1] J. Vuolevi and T. Rahkonen, Distortion in RF poweramplifiers. Boston: Artech House, 2003.[2] B. Baytekin and R. Meyer, "Analysis and simulation ofspectral regrowth in radio frequency power amplifiers,"IEEE Journal of Solid State Circuits, vol. 40, no. 2, pp.370-381, Feb. 2005.[3] H. Kobayashi and P. Asbeck, "Active Cancellation ofSwitching Noise for DC-DC Converter-Driven RF Power Amplifiers," Microwave Symposium Digest MTT-S, vol. 3, pp. 1647-1650, 2002.[4] T. Oshmia and M. Kokubo, "Simple polar-loop transmitterfor dual-mode bluetooth," IEEE International Symposium on Circuits and Systems (ISCAS), vol. 4, pp. 3966-3969, May 2005.[5] G. Hanington, P.-F. Chen, P. Asbeck, and L. E. Larson,"High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications," IEEE Transactions on Microwave Theory and Techniques, vol. 47, pp. 1471-1476, Aug. 1999.[6] L. O. Chua and N. C.-Y., "Frequency-domain analysis ofnonlinear systems: formulation of transfer functions," IEE Journal on Electronic Circuits and Systems, vol. 3, no. 6, pp. 257-269, Nov. 1979.[7] P. Wambacq and W. M. C. Sansen, Distortion analysis ofanalog integrated circuits. Boston, Mass: Kluwer Academic, 1998.[8] M. Schetzen, The Volterra and Wiener theories ofnonlinear systems. New York: Wiley, 1980.[9] R. Meyer, "EECS 242 course notes." University ofCalifornia, Berkeley, Spring 2004.GroundDownbondsRF-InRF-OutV-bias。
MPI TITAN RF Probe Selection Guide
MPI Probe Selection GuideWith a critical understanding of the numerous measurement challenges associated with today’s RF ap-plications, MPI Corporation has developed TITAN™ RF Probes, a product series specifically optimized for these complex applications centered upon the requirements of advanced RF customers.TITAN™ Probes provide the latest in technology and manufacturing advancements within the field of RF testing. They are derived from the technology transfer that accompanied the acquisition of Allstron, then significantly enhanced by MPI’s highly experienced RF testing team and subsequently produced utilizing MPI’s world class MEMS technology. Precisely manufactured, the TITAN™ Probes include matched 50 Ohm MEMS contact tips with improved probe electrical characteristics which allow the realization of unmat -ched calibration results over a wide frequency range. The patented protrusion tip design enables small passivation window bond pad probing, while significantly reducing probe skate thus providing the out -standing contact repeatability required in today’s extreme measurement environments. TITAN TM Probes with all their features are accompanied by a truly affordable price.The TITAN™ Probe series are available in single-ended and dual tip configurations, with pitch range from 50 micron to 1250 micron and frequencies from 26 GHz to 110 GHz. TITAN™ RF Probes are the ideal choice for on-wafer S-parameter measurements of RF, mm-wave devices and circuits up to 110 GHz as well as for the characterization of RF power devices requiring up to 10 Watts of continuous power. Finally, customers can benefit from both long product life and unbeatable cost of ownership which they have desired foryears.Unique design of the MEMS coplanar contacttip of the TITAN™ probe series.DC-needle-alike visibility of the contact point and the minimal paddamage due to the unique design of the tipAC2-2 Thru S11 Repeatability. Semi-Automated System.-100-80-60-40-200 S 11 E r r o r M a g n i t u d e (d B )Frequency (GHz)Another advantage of the TITAN™ probe is its superior contact repeatability, which is comparable with the entire system trace noise when measured on the semi-automated system and on gold contact pads.CROSSTALKCrosstalk of TITAN™ probes on the short and the bare ceramic open standard of 150 micron spacing compared to conventional 110 GHz probe technologies. Results are corrected by the multiline TRL calibration. All probes are of GSG configuration and 100 micron pitch.-80-60-40-200Crosstalk on Open. Multiline TRL Calibration.M a g (S21) (d B )Frequency (GHz)-80-60-40-200Crosstalk on Short. Multiline TRL Calibration.M a g (S21) (d B )Frequency (GHz)The maximal probe c ontac t repeatability error of the c alibrate S11-parameter of the AC2-2 thru standard by T110 probes. Semi-automated system. Ten contact circles.Cantilever needle material Ni alloy Body materialAl alloy Contact pressure @2 mils overtravel 20 g Lifetime, touchdowns> 1,000,000Ground and signal alignment error [1]± 3 µm [1]Planarity error [1] ± 3 µm [1]Contact footprint width < 30 µm Contact resistance on Au < 3 mΩThermal range-60 to 175 °CMechanical CharacteristicsAC2-2 Thru S21 Repeatability. Manual TS50 System.-100-80-60-40-200S 21 E r r o r M a g n i t u d e (d B )Frequency (GHz)MECHANICAL CHARACTERISTICSThe maximal probe c ontac t repeatability error of the c alibrate S21-parameter of the AC2-2 thru standard by T50 probes. Manual probe system TS50.26 GHZ PROBES FOR WIRELESS APPLICATIONSUnderstanding customer needs to reduce the cost of development and product testing for the high competitive wireless application market, MPI offers low-cost yet high-performance RF probes. The specifically developed SMA connector and its outstanding transmission of electro-magnetic waves through the probe design make these probes suitable for applications frequencies up to 26 GHz. The available pitch range is from 50 micron to 1250 micron with GS/SG and GSG probe tip configurations. TITAN™ 26 GHz probes are the ideal choice for measurement needs when developing components for WiFi, Bluetooth, and 3G/4G commercial wireless applications as well as for student education.Characteristic Impedance 50 ΩFrequency rangeDC to 26 GHz Insertion loss (GSG configuration)1< 0.4 dB Return loss (GSG configuration)1> 16 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical Characteristics26 GHz Probe Model: T26Connector SMAPitch range50 µm to 1250 µm Standard pitch step from 50 µm to 450 µm from 500 µm to 1250 µm25 µm step 50 µm stepAvailable for 90 µm pitch Tip configurations GSG, GS, SG Connector angleV-Style: 90-degree A-Style: 45-degreeMechanical CharacteristicsT26 probe, A-Style of the connectorTypical Electrical Characteristics: 26 GHz GSG probe, 250 micron pitchPROBES FOR DEVICE AND IC CHARACTERIZATION UP TO 110 GHZTITAN™ probes realize a unique combination of the micro-coaxial cable based probe technology and MEMS fabricated probe tip. A perfectly matched characteristic impedance of the coplanar probe tips and optimized signal transmission across the entire probe down to the pads of the device under test (DUT) result in excellent probe electrical characteristics. At the same time, the unique design of the probe tip provides minimal probe forward skate on any type of pad metallization material, therefo -re achieving accurate and repeatable measurement up to 110 GHz. TITAN™ probes are suitable for probing on small pads with long probe lifetime and low cost of ownership.The TITAN™ probe family contains dual probes for engineering and design debug of RF and mm-wave IC’s as well as high-end mm-wave range probes for S-parameter characterization up to 110 GHz for modeling of high-performance microwave devices.Characteristic Impedance 50 ΩFrequency rangeDC to 40 GHz Insertion loss (GSG configuration)1< 0.6 dB Return loss (GSG configuration)1> 18 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical Characteristics40 GHz Probe Model: T40Connector K (2.92 mm)Pitch range50 µm to 500 µmStandard pitch step For GSG configuration:from 50 µm to 450 µm from 500 µm to 800 µmFor GS/SG configuration:from 50 µm to 450 µm 25 µm step 50 µm stepAvailable for 90 µm pitch25 µm stepAvailable for 90/500 µm pitch Tip configurations GSG, GS, SG Connector angleV-Style: 90-degree A-Style: 45-degreeMechanical CharacteristicsTypical Electrical Characteristics: 40 GHz GSG probe, 150 micron pitchT40 probe, A-Style of the connectorCharacteristic Impedance50 ΩFrequency range DC to 50 GHz Insertion loss (GSG configuration)1< 0.6 dB Return loss (GSG configuration)1> 17 dBDC current≤ 1 ADC voltage≤ 100 VRF power, @10 GHz≤ 5 W Typical Electrical Characteristics Connector Q (2.4 mm)Pitch range50 µm to 250 µm Standard pitch stepFor GSG configuration: from 50 µm to 450 µm For GS/SG configuration: from 50 µm to 450 µm 25 µm stepAvailable for 90/500/550 µm pitch 25 µm stepAvailable for 90/500 µm pitchTip configurations GSG, GS, SG Connector angle V-Style: 90-degreeA-Style: 45-degreeMechanical CharacteristicsT50 probe, A-Style of the connectorTypical Electrical Characteristics: 50 GHz GSG probe, 150 micron pitchCharacteristic Impedance50 ΩFrequency range DC to 67 GHz Insertion loss (GSG configuration)1< 0.8 dB Return loss (GSG configuration)1> 16 dBDC current≤ 1 ADC voltage≤ 100 VRF power, @10 GHz≤ 5 W Typical Electrical Characteristics Connector V (1.85 mm)Pitch range50 µm to 250 µm Standard pitch stepFor GSG configuration: from 50 µm to 400 µm For GS/SG configuration: from 50 µm to 250 µm 25 µm step Available for 90 µm pitch25 µm step Available for 90 µm pitchTip configurations GSG Connector angle V-Style: 90-degreeA-Style: 45-degreeMechanical CharacteristicsT67 probe, A-Style of the connectorTypical Electrical Characteristics: 67 GHz GSG probe, 100 micron pitchCharacteristic Impedance 50 ΩFrequency rangeDC to 110 GHz Insertion loss (GSG configuration)1< 1.2 dB Return loss (GSG configuration)1> 14 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical CharacteristicsMechanical CharacteristicsTypical Electrical Characteristics: 110 GHz GSG probe, 100 micron pitchT110 probe, A-Style of the connectorCharacteristic impedance50 ΩFrequency range DC to 220 GHz Insertion loss (GSG configuration)1< 5 dB Connector end return loss(GSG configuration)1> 9 dBTip end return loss(GSG configuration)1> 13 dBDC current≤ 1.5 ADC voltage≤ 50 V Typical Electrical CharacteristicsConnector Broadband interface Pitch range50/75/90/100/125 µm Temperature range -40 ~ 150 ºC Contact width15 µmquadrant compatible(allowing corner pads)Yes recommended pad size20 µm x 20 µm recommended OT (overtravel)15 µmcontact resistance(on Al at 20 ºC using 15 µm OT)< 45 mΩlifetime touchdowns(on Al at 20 ºC using 15 µm OT)> 200,000Mechanical CharacteristicsT220 probe, broadband interface Typical Performance (at 20 ºC for 100 µm pitch)BODY DIMENSIONS PROBES Single-Ended V-StyleT220 GHz Probe1.161.1628.328437.455.6512.5527.73Single-Ended A-StyleCALIBRATION SUBSTRATESAC-series of calibration standard substrates offers up to 26 standard sets for wafer-level SOL T, LRM probe-tip cali -bration for GS/SG and GSG probes. Five coplanar lines provide the broadband reference multiline TRL calibration as well as accurate verification of conventional methods. Right-angled reciprocal elements are added to support the SOLR calibration of the system with the right-angled configuration of RF probes. A calibration substrate for wide-pitch probes is also available.Material Alumina Elements designCoplanarSupported calibration methods SOLT, LRM, SOLR, TRL and multiline TRL Thickness 635 µmSizeAC2-2 : 16.5 x 12.5 mm AC3 : 16.5 x 12.5 mm AC5 : 22.5 x 15 mm Effective velocity factor @20 GHz0.45Nominal line characteristic impedance @20 GHz 50 ΩNominal resistance of the load 50 ΩTypical load trimming accuracy error ± 0.3 %Open standardAu pads on substrate Calibration verification elements Yes Ruler scale 0 to 3 mm Ruler step size100 µmCalibration substrate AC2-2Probe Configuration GSGSupported probe pitch100 to 250 µm Number of SOL T standard groups 26Number of verification and calibration lines5Calibration substrate AC-3Probe Configuration GS/SG Supported probe pitch50 to 250 µm Number of SOL T standard groups 26Number of verification and calibration lines5Calibration substrate AC-5Probe Configuration GSG, GS/SG Supported probe pitch250 to 1250 µm Number of SOL T standard groups GSG : 7GS : 7SG : 7Open standardOn bare ceramic Number of verification and calibration linesGSG : 2GS : 1Typical characteristics of the coplanar line standard of AC2-2 calibration substrate measured using T110-GSG100 probes, and methods recommended by the National Institute of Standard and Technologies [2, 3].2468(d B /c m )F requency (G Hz)α-6-4-202I m a g (Z 0) ()F requency (G Hz)AC2-2 W#006 and T110A-GSG100Ω2.202.222.242.262.282.30 (u n i t l e s s )F requency (G Hz)β/βо4045505560R e a l (Z 0) ()F requency (G Hz)ΩTypical Electrical CharacteristicsMPI QAlibria® RF CALIBRATION SOFTWAREMPI QAlibria® RF calibration software has been designed to simplify complex and tedious RF system calibration tasks. By implementing a progressive disclosure methodology and realizing intuitive touch operation, QAlibria® provides crisp and clear guidance to the RF calibration process, minimizing con-figuration mistakes and helping to obtain accurate calibration results in fastest time. In addition, its concept of multiple GUI’s offers full access to all configuration settings and tweaks for advanced users. QAlibria® offers industry standard and advanced calibration methods. Furthermore, QAlibria® is integrated with the NIST StatistiCal™ calibration packages, ensuring easy access to the NIST mul-tiline TRL metrology-level calibration and uncertainty analysis.MPI Qalibria® supports a multi-language GUI, eliminating any evitable operation risks and inconvenience.SpecificationsRF AND MICROWAVE CABLESMPI offers an excellent selection of flexible cables and acces-sories for RF and mm-wave measurement applications forcomplete RF probe system integration.CablesHigh-quality cable assemblies with SMA and 3.5 mm connectorsprovide the best value for money, completing the entry-level RFsystems for measurement applications up to 26 GHz. Phase stab-le high-end flexible cable assemblies with high-precision 2.92, 2.4, 1.85 and 1 mm connectors guarantee high stability, accuracy and repeatability of the calibration and measurement for DC applications up to 110 GHz.MPI offers these cable assemblies in two standard lengths of 120 and 80 cm, matching the probe system’s footprint and the location of the VNA.Cables Ordering InformationMRC-18SMA-MF-80018 GHz SMA flex cable SMA (male) - SMA (female), 80 cmMRC-18SMA-MF-120018 GHz SMA flex cable SMA (male) - SMA (female), 120 cmMRC-26SMA-MF-80026 GHz SMA flex cable SMA (male) - SMA (female), 80 cmMRC-26SMA-MF-120026 GHz SMA flex cable SMA (male) - SMA (female), 120 cmMRC-40K-MF-80040 GHz flex cable 2.92 mm (K) connector, male-female, 80 cm longMRC-40K-MF-120040 GHz flex cable 2.92 mm (K) connector, male-female, 120 cm longMRC-50Q-MF-80050 GHz flex cable 2.4 mm (Q) connector, male-female , 80 cm longMRC-50Q-MF-120050 GHz flex cable 2.4 mm (Q) connector, male-female , 120 cm longMRC-67V-MF-80067 GHz flex cable 1.85 mm (V) connector, male-female, 80 cm longMRC-67V-MF-120067 GHz flex cable 1.85 mm (V) connector, male-female, 120 cm longMMC-40K-MF-80040 GHz precision flex cable 2.92 mm (K) connector, male-female, 80 cm long MMC-40K-MF-120040 GHz precision flex cable 2.92 mm (K) connector, male-female, 120 cm long MMC-50Q-MF-80050 GHz precision flex cable 2.4 mm (Q) connector, male-female , 80 cm long MMC-50Q-MF-120050 GHz precision flex cable 2.4 mm (Q) connector, male-female , 120 cm long MMC-67V-MF-80067 GHz precision flex cable 1.85 mm (V) connector, male-female, 80 cm long MMC-67V-MF-120067 GHz precision flex cable 1.85 mm (V) connector, male-female, 120 cm long MMC-110A-MF-250110 GHz precision flex cable 1 mm (A) connector, male-female, 25 cm longMPI Global PresenceDirect contact:Asia region: ****************************EMEA region: ******************************America region: ********************************MPI global presence: for your local support, please find the right contact here:/ast/support/local-support-worldwide© 2023 Copyright MPI Corporation. All rights reserved.[1] [2][3] REFERENCESParameter may vary depending upon tip configuration and pitch.R. B. Marks and D. F. Williams, "Characteristic impedance determination using propagation constant measu -rement," IEEE Microwave and Guided Wave Letters, vol. 1, pp. 141-143, June 1991.D. F. Williams and R. B. Marks, "Transmission line capacitance measurement," Microwave and Guided WaveLetters, IEEE, vol. 1, pp. 243-245, 1991.AdaptersHigh-In addition, high-quality RF and high-end mm-wave range adapters are offered to address challenges ofregular system reconfiguration and integration with different type of test instrumentation. MRA-NM-350F RF 11 GHz adapter N(male) - 3.5 (male), straight MRA-NM-350M RF 11 GHz adapter N(male) - 3.5 (female), straightMPA-350M-350F Precision 26 GHz adapter 3.5 mm (male) - 3.5 mm (female), straight MPA-350F-350F Precision 26 GHz adapter 3.5 mm (female) - 3.5 mm (female), straight MPA-350M-350M Precision 26 GHz adapter 3.5 mm (male) - 3.5 mm (male), straight MPA-292M-240F Precision 40 GHz adapter 2.92 mm (male) - 2.4 mm (female), straight MPA-292F-240M Precision 40 GHz adapter 2.92 mm (female) - 2.4 mm (male), straight MPA-292M-292F Precision 40 GHz adapter 2.92 mm (male) - 2.92 mm (female), straight MPA-292F-292F Precision 40 GHz adapter 2.92 mm (female) - 2.92 mm (female), straight MPA-292M-292M Precision 40 GHz adapter 2.92 mm (male) - 2.92 mm (male), straight MPA-240M-240F Precision 50 GHz adapter 2.4 mm (male) - 2.4 mm (female), straight MPA-240F-240F Precision 50 GHz adapter 2.4 mm (female) - 2.4 mm (female), straight MPA-240M-240M Precision 50 GHz adapter 2.4 mm (male) - 2.4 mm (male), straight MPA-185M-185F Precision 67 GHz adapter 1.85 mm (male) -1.85 mm (female), straight MPA-185F-185F Precision 67 GHz adapter 1.85 mm (female) -1.85 mm (female), straight MPA-185M-185M Precision 67 GHz adapter 1.85 mm (male) -1.85 mm (male), straight MPA-185M-100FPrecision 67 GHz adapter 1.85 mm (male) -1.00 mm (female), straightDisclaimer: TITAN Probe, QAlibria are trademarks of MPI Corporation, Taiwan. StatistiCal is a trademark of National Institute of Standards and Technology (NIST), USA. All other trademarks are the property of their respective owners. Data subject to change without notice.。
mimo
Shannon‟s Capacity (C)
Given a unit of BW (Hz), the max error-free transmission rate is C = log2(1+SNR) bits/s/Hz Define R: data rate (bits/symbol) RS: symbol rate (symbols/second) w: allotted BW (Hz) Spectral Efficiency is defined as the number of bits transmitted per second per Hz R x RS bits/s/Hz W As a result of filtering/signal reconstruction requirements, RS ≤ W. Hence Spectral Efficiency = R if RS = W
a and b are transmit and receive array factor vectors respectively. S is the complex gain that is dependant on direction and delay. g(t) is the transmit and receive pulse shaping impulse response
Aspirations (Mathematical) of a System Designer
High data rate Quality Achieve “Channel Capacity (C)” Minimize Probability of Error (Pe) Minimize complexity/cost of implementation of proposed System Minimize transmission power required (translates into SNR) Minimize Bandwidth (frequency spectrum) Used
RF-EXPLORER 3和RF-EXPLORER 6RF频谱分析仪说明书
RF-GENERATOR1
Order No. 25.6000
RF signal generator, 23.4-6,000 MHz • Fully programmable RF generator • Generates carrier and wobble signals from 23.4 MHz
Supplied w/o device.
RF-COVER/BL
Order No. 25.7000
RF-COVER/GE
Order No. 25.7010
RF-COVER/RT
Order No. 25.8000
RF-COVER/SW
Order No. 25.8010
Protective covers, for the RF series.
absolute • 50 Ω SMA connection • Mini USB 2.0 interface for connecting a PC or laptop
as well as for charging the built-in rechargeable lithium polymer battery (1,000 mAh) • Dimensions: 71 x 122 x 25 mm • Weight: 185 g
for setting an individual carrier frequency • Special Wi-Fi analyser with display of 13 WLAN
channels • Max hold function for a reliable detection of ultra-
二极管预失真
Diode Predistortion Linearization forPower Amplifier RFICs in Digital RadiosbyChristopher B. HaskinsThesis submitted to the faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree ofMaster of ScienceInElectrical EngineeringSanjay Raman, ChairCharles W. BostianDennis G. SweeneyApril 17, 2000Blacksburg, VAKeywords: predistortion, nonlinear, power amplifier, MESFET, HBT, intermodulation distortion, AM-AM, AM-PM, ACPR, envelope analysis,integrated circuitCopyright 2000, Christopher B. HaskinsDiode Predistortion Linearization forPower Amplifier RFICs in Digital RadiosChristopher B. Haskins(ABSTRACT)The recent trend in modern information technology has been towards the increased use of portable and handheld devices such as cellular telephones, personal digital assistants (PDAs), and wireless networks. This trend presents the need for compact and power efficient radio systems. Typically, the most power inefficient device in a radio system is the power amplifier (PA). PA inefficiency requires increased battery reserves to supply the necessary DC bias current, resulting in larger devices. Alternatively, the length of time between battery charges is reduced for a given battery size, reducing mobility.In addition, communications channels are becoming increasingly crowded, which presents the need for improved bandwidth efficiency. In order to make more efficient use of the frequency spectrum allocated for a particular system, there is a push towards complex higher order digital modulation schemes in modern radio systems, resulting in stricter linearity requirements on the system. Since power efficient amplifiers are typically nonlinear, this poses a major problem in realizing a bandwidth and power efficient radio system. However, by employing various linearization techniques, the linearity of a high efficiency PA may be improved.The work presented in this thesis focuses on diode predistortion linearization, particularly for PA RFICs in digital radios. Background discussion on common linearization techniques available to the PA designer is presented. In addition, a discussion of traditional and modern methods of nonlinearity characterization is presented, illustrating the nonlinear PA effects on a modulated signal. This includes the use of two-tone analysis and the more modern envelope analysis. Theoperation of diode predistortion linearizers is discussed in detail, along with diode optimization procedures for PA linearization with minimum impact on return loss and gain. This diode optimization is effective in improving the ability to integrate the predistorter into a single, linearized PA RFIC chip. MESFET and HBT based diode linearizers are studied for use with corresponding MESFET and HBT based PAs in the 2.68 GHz and 1.95 GHz frequency bands, respectively. Results show an improvement in adjacent channel power ratio (ACPR) due to the linearizer in both MESFET and HBT cases. A fully integrated 1.95 GHz linearizer and PA RFIC in HBT technology is also presented. Design considerations, simulations, and layouts for this design are presented. Finally, several recommendations are made for continued research in this area.AcknowledgmentsI would like to thank my advisor, Dr. Sanjay Raman, for all of his guidance, advice, and motivation throughout the completion of this thesis. His desire to improve and promote the high-frequency microelectronics program at Virginia Tech was key in providing me with the tools and funding to complete my research. In addition, I would like to thank the people at ITT GaAsTEK for sponsoring this work. This includes Dr. Thomas Winslow, Bert Schmitz, and Andy Vesel. Without their funding, materials, and expertise this work would not have been possible.The support of Dr. Charles Bostian and Dr. Dennis Sweeney was also greatly appreciated. Dr. Bostian has served as a member of my committee as well as employed me as a graduate research assistant with the Center for Wireless Telecommunications during my first seven months as a graduate student. Dr. Sweeney has also served as a member of my committee as well as provided me with valuable insight and help in solving problems.The donation of a HBT power amplifier and test board from A.J. Nadler of RF Microdevices (RFMD) is greatly appreciated.I am grateful to my entire family for all of their support throughout the years. My parents have always stressed the importance of education in my life. Their values and life choices are continually something that I look up to.I would also like to thank my friends and coworkers for all of their support throughout my time here at Virginia Tech. The support and friendship of these people has made my life much easier and more enjoyable throughout this time.Finally, I would like to thank my partner in life, Elizabeth. Without her love and support I might not have attended graduate school. Her strength of character has been something for me to look up to and strive for. She has always been there for me and her companionship has made my life more complete.Table of Contents1INTRODUCTION (1)1.1 An Overview of Common Linearization Techniques (4)1.1.1Cartesian Loop (4)1.1.2Polar Loop (6)1.1.3RF Feedback (7)1.1.4Feedforward (8)1.1.5Envelope Elimination and Restoration (EER) (10)1.1.6Linear Amplification Using Nonlinear Components (LINC)/Combined Analog-Locked LoopUniversal Modulator (CALLUM) (11)1.1.7Adaptive Baseband Predistortion (12)1.1.8RF/IF Predistortion (13)Linearizers (14)1.2 Predistortion1.2.1Cubic Predistortion (14)1.2.2Series Diode Predistortion (15)2DIGITAL MODULATION CONSIDERATIONS (19)2.1 Weakly Nonlinear Effects and Intermodulation Distortion (19)2.2 Strongly Nonlinear Effects and Adjacent Channel Power (22)Analysis (26)2.3 Envelope2.4 Conclusions (32)3FET DIODE OPTIMIZATION FOR SERIES DIODE PREDISTORTER (33)3.1 Background (33)3.2 Diode Characterization and Measurement Setup (34)3.3 Diode Characterization Results (38)Characterization (44)3.4 PA3.5 Diode Choice to Match PA (45)Results (48)3.6 ACPR3.7 Conclusions (53)4HBT DIODE OPTIMIZATION FOR SERIES DIODE PREDISTORTER (55)4.1 Background (55)Characterization (56)4.2 DiodeCharacterization (58)4.3 PA4.4 Diode Choice to Match PA (62)4.5 ACPRResults (63)4.6 Conclusions (66)5AN INTEGRATED HBT DIODE PREDISTORTER (68)Procedure (68)5.1 Design5.2 ACPR Simulation and Results (79)5.3 RFIC Die Layout (81)5.4 Conclusions (83)6CONCLUSIONS / FUTURE WORK (84)6.1 Conclusions (84)Work (86)6.2 FutureList of FiguresFigure 1.1 Cartesian loop feedback transmitter (5)Figure 1.2 Polar loop feedback transmitter [3] (6)Figure 1.3 RF feedback amplifier with gain and phase adjustment for second harmonic feedback technique (7)Figure 1.4 Feedforward transmitter [9] (8)Figure 1.5 EER transmitter (10)Figure 1.6 LINC transmitter [1] (11)Figure 1.7 Adaptive baseband predistortion transmitter (12)Figure 1.8 Predistortion amplifier (13)Figure 1.9 Cubic predistortion amplifier (14)Figure 1.10 Series diode predistorter (16)Figure 1.11 Results of Equation 1.2 in log magnitude format (18)Figure 1.12 Results of Equation 1.2 in phase format (18)Figure 2.1 Definition of the terms PEP and PTAR (20)Figure 2.2 Two tone IMD spectrum (21)Figure 2.3 Adjacent channel power (23)Figure 2.4 IMD spectrum for frequency modulated carriers in multicarrier transmitter (24)Figure 2.5 IMD spectrum for typical digitally modulated signal (25)Figure 2.6 RF voltage envelopes for varying peak-to-average ratios but equal mean power levels: PTAR = 3.0 dB (a), 4.0 dB (b), 4.7 dB (c), and 6.0 dB (d) (28)Figure 2.7 Representative PA linearity curves (30)Figure 2.8 Effect of nonlinear PA on signal envelope (31)Figure 3.1 Topology of MESFET diode: (left) top view, (right) side view (34)Figure 3.2 PCB for characterization of series diodes (35)Figure 3.3 Block diagram of basic test setup for diode characterization (35)Figure 3.4 S-parameter data for through measurement used to verify proper setup (37)Figure 3.5 50µm diode S-parameter data versus input power and bias at 1.9 GHz (40)Figure 3.6 300µm diode S-parameter data versus input power and bias at 1.9 GHz (41)Figure 3.7 Measured AM-AM, AM-PM, and RL for a 50, 100, and 300µm diode biased for roughly 5 degrees of AM-PM at 1.9 GHz (42)Figure 3.8 2.68 GHz MESFET PA and test PCB (44)Figure 3.9 Block diagram of test setup used to characterize PA (45)Figure 3.10 2.68 GHz MESFET PA S-parameters versus input power (46)Figure 3.11 PA and 500µm diode (biased at 0.57V) AM-AM and AM-PM at 2.68 GHz (47)Figure 3.12 Block diagram of test setup used to characterize PA and diode predistorter together (49)Figure 3.13 AM-AM and AM-PM results of linearized and standalone PA at 1.95 GHz (49)Figure 3.14 Block diagram of test setup used to characterize ACPR of linearized and standalone PA (50)Figure 3.15 Spectrum plots for filtered OQPSK modulation at output of (a) standalone PA (b) linearized PA (52)Figure 4.1 Topology of HBT diode: (left) top view, (right) side view (56)Figure 4.2 Measured AM-AM, AM-PM, and RL for a 60, 120, and 240µm2 diode biased for roughly 5 degrees of AM-PM at 1.95 GHz (57)Figure 4.3 Simulated and measured S-parameters at 1.95 GHz versus output power for a 240µm2 diode biased at 1.25V (59)Figure 4.4 1.95 GHz HBT PA and test PCB (60)Figure 4.5 1.95 GHz HBT PA S-parameters versus input power (61)Figure 4.6 PA and 240µm diode (biased at 1.25V) AM-AM and AM-PM at 1.95 GHz (62)Figure 4.7 AM-AM and AM-PM results of linearized and standalone PA at 1.95 GHz (63)Figure 4.8 Spectrum plots for filtered OQPSK modulation at output of (a) standalone PA (b) linearized PA (65)Figure 4.9 ACPR improvement due to linearizer versus PA output power (66)Figure 5.1 1.95 GHz HBT PA simulated S-parameter data versus output power (69)Figure 5.2 Input impedance unmatched - 1.95 GHz HBT PA simulated S-parameter data versus output power (71)Figure 5.3 Input impedance unmatched - 1.95 GHz PA simulated input impedance Smith chart72 Figure 5.4 Schematic for diode linearized 1.95 GHz HBT PA (73)Figure 5.5 Input impedance matched - 1.95 GHz HBT PA cascaded with 240µm2 diode predistorter (biased at 1.25V) simulated S-parameter data versus output power (74)Figure 5.6 Input impedance matched - 1.95 GHz HBT PA cascaded with 240µm2 diode predistorter (biased at 1.25V) simulated input impedance Smith chart (75)Figure 5.7 Input impedance matched - 1.95 GHz HBT PA cascaded with 240µm2 diode predistorter (biased at 1.29V) simulated input impedance Smith chart (76)Figure 5.8 Input impedance matched - 1.95 GHz HBT PA cascaded with 240µm2 diode predistorter (biased at 1.29V) simulated S-parameter data versus output power (77)Figure 5.9 Simulated AM-AM and AM-PM results of linearized and standalone PA for a diode bias of 1.29V (78)Figure 5.10 Linearized (diode biased at 1.29V) and standalone 1.95 GHz HBT PA peak power spectrum simulated in HP EEsof (80)Figure 5.11 Diode linearized PA RFIC die layout (82)Figure 5.12 Diode linearized PA RFIC die wire bonding diagram (82)List of TablesTable 1.1 Summary of Common Linearization Techniques (4)Table 3.1 ACPR improvement due to linearizer for various modulation and PTAR (51)Table 4.1 ACPR improvement due to linearizer for various modulation and PTAR (64)1 IntroductionAmplifier linearity plays a major role in the design of modern communication systems. To accurately decode most modern digitally modulated signals, linear amplification and frequency conversion are necessary throughout the transmit and receive portions of the system. Any amplitude and/or phase distortions on the signal may reduce the ability to decode these signals properly. Due to the limited amount of available frequency spectrum, communications channels are quickly becoming crowded. Claude Shannon’s theoretical channel capacity limits are coming within reach and in some cases exceeded (Shannon’s limit assumes additive white Gaussian noise (AWGN) channel). Today’s communications engineers must find new and innovative ways to reach these limits and possibly push them even further. This push towards increased bandwidth usage presents a need for increased bandwidth efficiency in order to increase system capacities. The current solution is found in more bandwidth efficient modulation schemes, which in turn requires highly linear amplification throughout radio architectures.Higher order modulation schemes such as QPSK, OQPSK, and π/4 DQPSK are generally favored for their efficient use of bandwidth; however, they exhibit a non-constant envelope when filtered or pulse shaped. This non-constant envelope is susceptible to nonlinearities in the radio. Constant envelope modulation schemes such as FSK or GMSK may be used, but they have wider main lobes than PSK techniques, and thus are still not as spectrally efficient. Other types of modulation such as QAM exhibit greatly improved bandwidth efficiency at the expense of further susceptibility to nonlinearities due to their large non-constant envelope [1][2].Several problems arise when the designer requires a linear amplifier in a radio system. The first major problem is that linear amplifiers are generally very inefficient in their use of power. This in turn causes excess current drain on the radio’s power supply. In modern mobile and remotely located radios, the power supply is usually a battery, which has a limited lifetime. This mandates the efficient use of current to prolong operating timeand/or reduce battery size. Power added efficiency (PAE) is a common term used to characterize this power amplifier (PA) efficiency and is defined as the following:DC INP PP PAE −=1, (1.1)where P1 is the fundamental RF output power, P IN is the RF drive power, and P DC is theDC power. PAE will be used throughout this paper whenever power efficiency is referredto.The second major problem with the use of linear amplifiers is the cost factor. Typically, ahigh efficiency, saturating amplifier is simply backed-off from the compression point to an input power point that exhibits the required linearity. This back-off method is quite acceptable and is used widely in industry; however, the cost associated with doing this ishigh since the designer is using a more expensive, higher power amplifier to do the job.The higher power amplifier must be operated at a lower power output, which could resultin the requirement of additional amplifier stages, driving up the overall system cost. Also, even lower PAE results through this back-off technique, leading to a higher current consumption in the desired product. For example, a +30 dBm saturated output power amplifier could be backed-off by 6 dB to achieve the required linearity. The cost difference of purchasing a +30 dBm amplifier versus purchasing a +24 dBm amplifier canbe quite high, especially when it is a microwave or mm-wave amplifier.An alternative to the above back-off method to achieve the required amplifier linearity is through device biasing. Class A biased amplifiers exhibit the best linearity but have poorPAE and exhibit a reduced power output. These amplifiers are biased exactly in the middle of their linear region of operation. As long as the RF signal never drives the amplifier out of this linear region, perfect linearity is ideally achieved. Due to the PAE problem and limited power output, these amplifiers are avoided if possible. Amplifiers biased for higher PAE include Class AB, Class B, and Class C. These amplifiers obtain higher efficiency by biasing the device at a low quiescent current (near cutoff) andallowing the RF input signal to swing the device into conduction. This causes the amplifier to draw less current since it only “turns on” and draws large amounts of current when driven into conduction. These amplifiers are sometimes referred to as reduced conduction angle amplifiers. Since these reduced conduction angle amplifiers are operated in a nonlinear region, any envelope information contained in the RF signal will be lost or severely distorted. The phase or frequency information is obtained through harmonic filtering of the nonlinear output, thus is not affected by the nonlinear operation. From this the reader can see that the nonlinear operation of these high efficiency amplifiers is detrimental to a signal containing any envelope information. If some form of linearization technique could be applied to a lower power, more efficient, saturated (nonlinear) amplifier to approach the linearity of a Class A amplifier, significant cost savings could occur while maintaining a decent PAE.The intended application of focus in this thesis is for RF integrated circuit (RFIC) PAs. The increased need for smaller, lightweight, and power efficient circuits in portable devices has led to the need for these RFICs. Since PAs typically consume a large portion of the power in a system, they are an obvious target for power efficiency improvement. In addition, the ability to integrate a given linearization technique is key in reducing overall device size and weight; thus this is an important factor to consider when choosing a linearization technique.The remainder of Chapter 1 presents an overview of common linearization techniques. The advantages and disadvantages of each technique are discussed. Predistortion linearizers are discussed in detail. Chapter 2 of this thesis discusses the typical nonlinear characteristics that may affect a digitally modulated signal. A traditional two-tone analysis is presented. Common terms such as intermodulation distortion (IMD), peak envelope power (PEP), peak-to-average ratio (PTAR), AM-AM, AM-PM, and adjacent channel power ratio (ACPR) are defined and discussed. The importance of envelope analysis and a brief example concludes Chapter 2. The next two chapters present the details of a diode predistorter optimization. A MESFET based predistorter for a 2.68 GHz MESFET PA is analyzed and optimized in Chapter 3. A HBT based predistorter for a 1.95 GHz HBT PATable 1.1 Summary of Common Linearization Techniquesis analyzed and optimized in Chapter 4. Results are also presented in both of these chapters. Chapter 5 builds on the results of the previous chapters to design and simulate a fully integrated linearized HBT PA RFIC chip. The thesis is concluded in Chapter 6. Recommended areas of future work are suggested. This future work includes the additional fabrication and testing of the fully integrated RFIC chip designed in Chapter 5. 1.1 An Overview of Common Linearization TechniquesA wide range of linearization techniques is available to the modern power amplifier/ communication system designer. These techniques can be roughly classified into three groups: (1) feedback, (2) feedforward, and (3) predistortion. Each of these three groups contains several techniques, which are shown in Table 1.1. Notice that adaptive baseband predistortion falls into both feedback and predistortion groupings [3][4]. These techniques will be briefly described in the following sections.1.1.1 Cartesian LoopCartesian Loop is a form of feedback that involves linearization of the complete transmitter (Figure 1.1). Baseband I and Q signals are upconverted to the carrier frequency and then amplified to the desired power level. This signal is then sampled and downconverted back into quadrature components. The resulting I and Q signals are fedFeedbackFeedforward Predistortion Cartesian LoopPolar loopBasic feedforward Linear amplification using nonlinear components (LINC)/ combined analog-locked loop universal modulator (CALLUM) RF feedbackEnvelope elimination and restoration (EER) RF/IF predistortion Adaptive basebandpredistortionAdaptive baseband predistortionIQLPFFigure 1.1 Cartesian loop feedback transmitter [3]back to the transmitter input, where they are compared to the original baseband inputs with error amplifiers.With this technique, any nonlinearity in the transmitter is effectively cancelled out. The entire process of upconversion and any intermediate stages of amplification are included in the linearization process. One of the main drawbacks of this technique is a limited bandwidth due to delay around the loop. Thus, a compromise must be made between the bandwidth of the feedback loop and linearity improvement. Due to the addition of the feedback demodulators and error amplifiers, the PAE of this system is generally not improved unless the additional components can be implemented in an IC with low power dissipation and a high efficiency power amplifier (e.g. Class C) is used [3].ModulationFigure 1.2 Polar loop feedback transmitter [3]1.1.2 Polar LoopAnother form of feedback that may be used for linearization is polar loop [3]. This technique is similar to the Cartesian loop except that amplitude and phase are fed back rather than I and Q (Figure 1.2). A resulting problem with this method is that the required feedback bandwidths for the amplitude and phase components are different from each other for most modulation formats. This limits the available loop gain to either the amplitude or phase path since one path will require a feedback bandwidth that reduces the available loop gain, while the other path may need a larger loop gain. This effectively limits the overall linearity improvement. Essentially, the operation of the phase-feedback path relies on a phase-locked loop; the loop can experience locking problems at low amplitude levels and also have problems tracking abrupt changes in phase, such as those occurring at the envelope minima in a two-tone test. This linearization method is generally not used in practice.Figure 1.3 RF feedback amplifier with gain and phase adjustment for second harmonicfeedback technique [6]1.1.3 RF FeedbackThe above methods all make use of feedback to achieve linearization, but through feedback and modification of the baseband inputs to the transmitter. RF amplifier feedback (Figure1.3) may also be used in the design of the PA to achieve some measure of linearization.One technique makes use of narrowband, negative feedback to the amplifier input. In order to preserve stability and achieve good IMD improvement, the delay in the feedback path must be carefully taken into consideration. Also, a bandlimiting filter must exist in the feedback path for stability [6]. Stability problems limit this technique to narrowband radio systems.Another form of feedback that has received increased attention in recent years is second harmonic feedback. This technique feeds the second harmonic signal produced at the PA output back to the PA input to reduce third order IMD. The nonlinearity of the amplifier causes interaction between the source signals and their fed-back second harmonics. By proper selection of the phase and amplitude of the fed-back second harmonics, it is possible to have the third order IMD produced by the second harmonics be out of phase and equal in amplitude from the original third order IMD. Thus, ideally, the third order IMD may be totally eliminated [7].Main AmplifierError AmplifierFigure 1.4 Feedforward transmitter [9]However, this second harmonic feedback technique does have limitations. As stated above, the phase and amplitude in the feedback path must be accurately selected for ideal reduction/elimination of the third order IMD product. Similarly, the second harmonic has also been utilized in the feed-forward technique [8] to reduce spectral regrowth. Spectral regrowth will be discussed in Chapter 2. In [8] the authors state that a phase error of +/- 10° gave an increase of 6 dB in spectral regrowth, while a gain error of +/- 2 dB gave an increase of 8 dB in spectral regrowth, indicating the importance of proper gain and phase matching.1.1.4 FeedforwardThe feedforward technique (Figure 1.4) is the subject of considerable active research, and as a result a large number of articles are available in the literature [4][9][10]. Its popularity is due largely to the ability to linearize wideband, multicarrier signals. This technique is conceptually simple, but can become rather costly to implement in hardware. In its simplest form, there are two paths: a signal cancellation path and main RF path. A hybrid splitter divides the power between the two paths. Half of the RF input power is fed through a 180° delay line. The other half of the RF input power is fed to the main PA.IMD is generated in this PA and the output is sampled and fed through a hybrid combinerwhere it is combined with the signal in the delay path. Thus, an amplified, distorted signal is combined with the original input signal, which has been delayed by 180°. With an adjustable attenuator in line with the sampled (coupled), distorted signal to adjust for amplitude matching between the two signals, the main signal is exactly cancelled out while the distortion products feed through the combiner. These distortion products are then amplified by a highly linear class A error amplifier. The signal in the upper path at the output of the main amplifier and coupler is the desired RF signal including distortion created by that amplifier. The signal in the lower path at the output of the error amplifier is ideally an amplified form of only the distortion created by the main amplifier. The delay line in the upper path is adjusted to compensate for the delay in the error amplifier in the lower path. This is because both signals must reach the output coupler 180° out of phase. In addition, the distortion signal in the lower path must be of sufficient amplitude to compensate for the coupling factor in the output error injection coupler. If the two signals are 180° out of phase and the distortion product amplitudes are the same, perfect distortion cancellation may occur and result in a distortion-free RF signal at the output of the system [9].The most critical component in a feedforward system is the error amplifier. It must not contribute any IMD products itself and it must have high gain and minimal propagation delay. The propagation delay affects the required delay line length in the upper path and thus the insertion loss at the main amplifier output. Excessive delay results in poorer efficiency and reduced IMD improvements, due to the need to drive the main amplifier harder to overcome these losses. In addition, the delay and gain in this system must be accurately controlled for ideal IMD reduction; thus some form of control must be implemented to adjust gain and delay. A digital signal processor (DSP) may be used to perform this gain and delay adjustment, or degraded performance may be accepted based on a calculated maximum phase and gain error in the system. While this technique is costly to implement, it has proven to be quite effective on wideband, multicarrier signals such as CDMA and WCDMA. This is an important advantage to the feedforward linearization technique, justifying the cost and hardware overhead in already expensivePower AmplifierFigure 1.5 EER transmitter [5]base station and satellite systems. However, this technique is generally not practical in low cost, lightweight, mobile terminals.1.1.5 Envelope Elimination and Restoration (EER)A variation of the feedforward technique is envelope elimination and restoration (EER)(Figure 1.5), which is also known as the Kahn technique. Here the modulated RF input signal is sampled through a coupler or power divider to recover the envelope information.In parallel, the RF signal is limited; this eliminates the envelope and allows the constant amplitude, phase modulated carrier to be amplified efficiently by a suitable nonlinear PA.To restore the envelope information, the final RF PA stage is amplitude modulated via the DC bias of the PA [5]. The envelope information (voltage) swings on top of the PA DC bias. This technique may be accomplished with analog or DSP techniques and may involve the entire transmitter or just the PA.Very good results can be attained due to the fact that high efficiency switching (Class C, D, E, or F) power amplifiers and audio amplifiers may now be used to amplify the constant envelope signal (which is less susceptible to nonlinearities). Ideally, 100% efficiency may be attained, although this is not the case in the real world. However, this technique is limited to modest levels of envelope variation. Large envelope variations may drive the PA transistor bias into cutoff resulting in significant distortion [3].。
virtuoso_mmsim简介
BENEFITS
DESIGN QUALITY AND CONVERGENCE
• Uses silicon-accurate device models across all simulators that are universally supported by all foundry process design kits (PDKs) • Supports shared syntax and abstractions across all engines and minimizes translation when moving among design domains • Features tight integration with the Virtuoso Analog Design Environment— with common use model, cross-probing, and backannotation capabilities • Features tight integration into the Incisive Logic Design Environment— with common-use model, debugging, waveform viewing, and language support • Provides a proven, comprehensive suite of high-precision analyses with a simple use model, delivering accurate results • Offers post-layout simulation and signoff analysis to ensure first-pass silicon realization success
电气专业常用英语词汇
电气专业常用英语词汇电气专业常用英语词汇发电机 generator 励磁 excitation励磁器 excitor电压 voltage电流 current升压变压器 step-up transformer母线 bus变压器 transformer空载损耗:no-load loss铁损:iron loss铜损:copper loss空载电流:no-load current有功损耗:reactive loss无功损耗:active loss输电系统 power transmission system高压侧 high side输电线 transmission line高压: high voltage低压:low voltage中压:middle voltage功角稳定 angle stability稳定 stability电压稳定 voltage stability暂态稳定 transient stability电厂 power plant能量输送 power transfer交流 AC直流 DC电网 power system落点 drop point开关站 switch station调节 regulation高抗 high voltage shunt reactor并列的:apposable裕度 margin故障 fault三相故障 three phase fault分接头:tap切机 generator triping高顶值 high limited value静态 static (state)动态 dynamic (state)机端电压控制 AVR电抗 reactance电阻 resistance功角 power angle有功(功率) active power电容器:Capacitor电抗器:Reactor断路器:Breaker电动机:motor功率因数:power-factor定子:stator阻抗:impedance功角:power-angle电压等级:voltage grade有功负载: active load PLoad无功负载:reactive load档位:tap position电阻:resistor电抗:reactance电导:conductance电纳:susceptance上限:upper limit下限:lower limit正序阻抗:positive sequence impedance 负序阻抗:negative sequence impedance 零序阻抗:zero sequence impedance无功(功率) reactive power功率因数 power factor无功电流 reactive current 斜率 slope 额定 rating变比 ratio参考值 reference value电压互感器 PT分接头 tap仿真分析 simulation analysis下降率 droop rate传递函数 transfer function框图 block diagram受端 receive-side同步 synchronization保护断路器 circuit breaker摇摆 swing阻尼 damping无刷直流电机:Brusless DC motor刀闸(隔离开关):Isolator机端 generator terminal变电站 transformer substation永磁同步电机:Permanent-magnet Synchronism Motor异步电机:Asynchronous Motor三绕组变压器:three-column transformer ThrClnTrans双绕组变压器:double-column transformer DblClmnTrans固定串联电容补偿fixed series capacitor compensation双回同杆并架 double-circuit lines on the same tower单机无穷大系统 one machine - infinity bus system励磁电流:magnetizing current补偿度 degree of compensationElectromagnetic fields 电磁场失去同步 loss of synchronization装机容量 installed capacity无功补偿 reactive power compensation故障切除时间 fault clearing time极限切除时间 critical clearing time强行励磁 reinforced excitation并联电容器:shunt capacitor< 下降特性 droop characteristics线路补偿器 LDC(line drop compensation)电机学 Electrical Machinery自动控制理论 Automatic Control Theory电磁场 Electromagnetic Field微机原理 Principle of Microcomputer电工学 ElectrotechnicsPrinciple of circuits 电路原理Electrical Machinery 电机学电力系统稳态分析 Steady-State Analysis of Power System电力系统暂态分析 Transient-State Analysis of Power System电力系统继电保护原理 Principle of Electrical System's Relay Protection 电力系统元件保护原理 Protection Principle of Power System 's Element 电力系统内部过电压 Past Voltage within Power system模拟电子技术基础 Basis of Analogue Electronic Technique数字电子技术 Digital Electrical Technique电路原理实验Lab. of principle of circuits电气工程讲座 Lectures on electrical power production电力电子基础Basic fundamentals of power electronics高电压工程High voltage engineering电子专题实践Topics on experimental project of electronics 电气工程概论Introduction to electrical engineering电子电机集成系统electronic machine system电力传动与控制Electrical Drive and Control电力系统继电保护 Power System Relaying Protection induction machine 感应式电机horseshoe magnet 马蹄形磁铁magnetic field 磁场eddy current 涡流right-hand rule 右手定则left-hand rule 左手定则slip 转差率induction motor 感应电动机rotating magnetic field 旋转磁场winding 绕组stator 定子rotor 转子induced current 感生电流time-phase 时间相位exciting voltage 励磁电压solt 槽lamination 叠片laminated core 叠片铁芯short-circuiting ring 短路环squirrel cage 鼠笼rotor core 转子铁芯cast-aluminum rotor 铸铝转子bronze 青铜horsepower 马力random-wound 散绕insulation 绝缘ac motor 交流环电动机end ring 端环alloy 合金coil winding 线圈绕组form-wound 模绕performance characteristic 工作特性frequency 频率revolutions per minute 转/分motoring 电动机驱动generating 发电per-unit value 标么值breakdown torque 极限转矩breakaway force 起步阻力overhauling 检修wind-driven generator 风动发电机revolutions per second 转/秒number of poles 极数speed-torque curve 转速力矩特性曲线 plugging 反向制动synchronous speed 同步转速percentage 百分数locked-rotor torque 锁定转子转矩full-load torque 满载转矩prime mover 原动机inrush current 涌流magnetizing reacance 磁化电抗line-to-neutral 线与中性点间的staor winding 定子绕组leakage reactance 漏磁电抗no-load 空载full load 满载Polyphase 多相(的)iron-loss 铁损complex impedance 复数阻抗rotor resistance 转子电阻leakage flux 漏磁通locked-rotor 锁定转子chopper circuit 斩波电路separately excited 他励的compounded 复励dc motor 直流电动机de machine 直流电机speed regulation 速度调节shunt 并励series 串励armature circuit 电枢电路optical fiber 光纤interoffice 局间的wave guide 波导波导管bandwidth 带宽light emitting diode 发光二极管silica 硅石二氧化硅regeneration 再生, 后反馈放大coaxial 共轴的,同轴的high-performance 高性能的carrier 载波mature 成熟的Single Side Band(SSB) 单边带coupling capacitor 结合电容propagate 传导传播modulator 调制器demodulator 解调器line trap 限波器shunt 分路器Amplitude Modulation(AM 调幅Frequency Shift Keying(FSK) 移频键控tuner 调谐器attenuate 衰减incident 入射的two-way configuration 二线制generator voltage 发电机电压dc generator 直流发电机polyphase rectifier 多相整流器boost 增压time constant 时间常数forward transfer function 正向传递函数error signal 误差信号regulator 调节器stabilizing transformer 稳定变压器time delay 延时direct axis transient time constant 直轴瞬变时间常数 transient response 瞬态响应solid state 固体buck 补偿operational calculus 算符演算gain 增益pole 极点feedback signal 反馈信号dynamic response 动态响应voltage control system 电压控制系统mismatch 失配error detector 误差检测器excitation system 励磁系统field current 励磁电流transistor 晶体管high-gain 高增益boost-buck 升压去磁feedback system 反馈系统reactive power 无功功率feedback loop 反馈回路automatic Voltage regulator(AVR)自动电压调整器reference Voltage 基准电压magnetic amplifier 磁放大器amplidyne 微场扩流发电机self-exciting 自励的limiter 限幅器manual control 手动控制block diagram 方框图linear zone 线性区potential transformer 电压互感器stabilization network 稳定网络stabilizer 稳定器air-gap flux 气隙磁通saturation effect 饱和效应saturation curve 饱和曲线flux linkage 磁链per unit value 标么值shunt field 并励磁场magnetic circuit 磁路load-saturation curve 负载饱和曲线air-gap line 气隙磁化线polyphase rectifier 多相整流器circuit components 电路元件circuit parameters 电路参数electrical device 电气设备electric energy 电能primary cell 原生电池energy converter 电能转换器conductor 导体heating appliance 电热器direct-current 直流time invariant 时不变的self-inductor 自感mutual-inductor 互感the dielectric 电介质storage battery 蓄电池e.m.f = electromotive force 电动势3年前 // 2℃ //标签:汽车电力系统专业词汇电气DZ47LE-63C16/2-30mA:DZ47---系列微型断路器(还有很多系列,基本都是厂家命名的)LE-----带漏电脱扣功能63-----框架等级为63AC------瞬时脱扣过流倍数按照明类,如5~7或7~10倍,D为动力型10~14倍16/2---额定电流,16A;极数为2极30mA---漏电动作电流为不大于30mA2、塑壳断路器NS100N-STR22SE-100/3P-P-RCNS-----施耐德(天津梅兰日兰)产品代号100----框架电流等级,有100、160、250、400、630STR22SE--脱扣器类型,电子脱扣,用于NS100、160、250100/3P---额定电流100A,极数为3极P------插入式(安装方式),F--固定式,D--抽出式FC-----板前接线,RC--板后接线另外,后缀还可以有:MX/MN--分励/失压线圈OF/SD/SDE/SDV----多功能辅助开关MCH----电动操作机构ME/MB/MH----漏电保护模块、电流表模块、电流互感器模块、延伸旋转手柄3、类似的图纸标注还有很多,不一定是统一的作图规定、规范,凡是与电气产品有关的标注代号,基本上都参照厂家的产品样本。
八年级物理英语知识点
八年级物理英语知识点Eighth Grade Physics Knowledge PointsAs students move into their eighth-grade year, they will begin to dive deeper into the world of Physics. Understanding the fundamental principles of Physics and the application of these principles is crucial to success in the field of science. In this article, we will discuss some key Physics knowledge points that eighth-graders should know.1. Units of MeasurementIn Physics, units of measurement are used to quantify physical quantities. The International System of Units, or SI Units, is the standard system of units used in Physics. The SI Units consist of a set of fundamental units, including the meter (m) for length, kilogram (kg) for mass, and second (s) for time. Eighth graders should familiarize themselves with these units and be able to convert from one unit to another.2. Motion and ForceEighth-grade Physics covers topics such as motion and force. Motion refers to the change in position of an object over time. An object's motion is determined by its speed, velocity, and acceleration. Force, on the other hand, is any influence that causes an object to undergo a change in motion. Understanding the relationship between motion and force is crucial in eighth-grade Physics.3. EnergyIn Physics, energy is the ability to do work. There are several different types of energy, including kinetic, potential, thermal, and electrical. Kinetic energy is the energy of motion, whereas potential energy is stored energy that can be released. Thermal energy is the energy of heat, and electric energy is the energy of electric charge. Understanding the different types of energy and how they relate to one another is crucial in eighth-grade Physics.4. WavesWaves are an essential topic in eighth-grade Physics. Waves are disturbances that travel through space and time, with examples including sound waves, electromagnetic waves, and water waves. Eighth-graders should understand the properties of waves, includingwavelength, frequency, and amplitude. They should also be able to distinguish between different types of waves and their applications.5. Light and OpticsIn eighth-grade Physics, optics is the study of light and how it behaves. Students should understand the properties of light, including reflection, refraction, and absorption. They should also be familiar with the different types of lenses, mirrors, and prisms and understand how they affect light.6. Electricity and MagnetismThe study of electricity and magnetism is another crucial topic in eighth-grade Physics. Electricity is the flow of charged particles, such as electrons, while magnetism is the attraction or repulsion between two objects. Students should be able to understand the basic principles of both electricity and magnetism, including electric circuits, voltage, current, and magnetic fields.ConclusionIn conclusion, eighth-grade Physics is an exciting field that can help students understand the world around them. Understanding the key knowledge points in Physics is crucial to success in the field of science. By mastering these topics, eighth-graders will be better prepared to tackle more advanced Physics concepts in high school and beyond.。
Advanced Topics in Microbiology
Advanced Topics in MicrobiologyMicrobiology is the study of microorganisms, including bacteria, viruses, fungi, and protozoa. It is a vast and diverse field, and there are many advanced topics within microbiology that are currently being researched and studied. In this article, we will explore some of these advanced topics, including microbial genetics, microbial ecology, and the role of microorganisms in human health and disease.Microbial genetics is a fascinating and rapidly advancing field within microbiology. This area of study focuses on the genetic makeup of microorganisms, including the structure and function of their DNA, RNA, and proteins. Researchers in this field are interested in understanding how genetic variation within microbial populations leads to differences in traits such as antibiotic resistance, virulence, and metabolic capabilities. Understanding microbial genetics is essential for developing new strategies to combat infectious diseases and for developing novel biotechnological applications.Another advanced topic in microbiology is microbial ecology, which is the study of the interactions between microorganisms and their environments. Microbial ecologists investigate how microorganisms colonize and adapt to different environments, such as soil, water, and the human body. They also study the complex webs of interactions between microorganisms and other organisms, including plants, animals, and other microbes. Understanding microbial ecology is crucial for addressing pressing environmental issues, such as climate change, pollution, and the preservation of biodiversity.The role of microorganisms in human health and disease is another important advanced topic in microbiology. While some microorganisms can cause infectious diseases, many others play essential roles in maintaining human health. For example, the human gut microbiota, which consists of billions of bacteria and other microorganisms, has been found to influence human metabolism, immune function, and even behavior. Researchers are also investigating the potential of harnessing the power of beneficial microorganisms to develop new therapies for various diseases, including inflammatory bowel disease, obesity, and even mental health disorders.In addition to the above-mentioned topics, there are many other advanced areas of study within microbiology, such as microbial evolution, virology, and microbial biotechnology. Microbial evolution seeks tounderstand how microorganisms evolve and adapt to changing environmental conditions, including exposure to antibiotics and other stressors. Virology focuses on the study of viruses, which are intracellular parasites that can infect all forms of life. This area of study is particularly relevant given the ongoing threat of emerging viral diseases, such as HIV, Ebola, and Zika. Microbial biotechnology involves the use of microorganisms to produce valuable products, such as pharmaceuticals, biofuels, and industrial enzymes. This field has enormous potential for addressing global challenges related to sustainable energy production, environmental protection, and human health.In conclusion, advanced topics in microbiology encompass a broad range of fascinating and important areas of study, including microbial genetics, microbial ecology, and the role of microorganisms in human health and disease. Understanding these topics is crucial for developing new strategies to combat infectious diseases, addressing environmental challenges, and improving human health and well-being. As technology continues to advance, it is likely that these advanced topics will become even more relevant and impactful in the years to come.。
国际音标学习计划大学专业
国际音标学习计划大学专业International Phonetic Alphabet (IPA) is a system of phonetic notation that represents the sounds of spoken language. It is used by linguists, speech pathologists, and language teachers to study and analyze the sounds of human speech. Learning IPA is essential for anyone who wants to understand and describe the sounds of language, and it is especially important for those who are studying languages other than their native tongue.In this study plan, I will outline a comprehensive approach to learning IPA, including the basics of phonetics, the IPA symbols for English and other languages, and practical exercises for mastering the system. This plan is designed for university students who are majoring in linguistics, language education, speech pathology, or related fields, but it can also be used by anyone who wants to improve their understanding of phonetics and phonology.1. Understanding the Basics of PhoneticsBefore diving into the study of IPA, it is important to have a solid understanding of the basics of phonetics. This includes understanding the articulatory phonetics, acoustic phonetics, and auditory phonetics. Articulatory phonetics is the study of how speech sounds are produced, including the movements of the vocal tract and the articulators. Acoustic phonetics is the study of the physical properties of speech sounds, such as frequency, amplitude, and duration. Auditory phonetics is the study of how speech sounds are perceived and processed by the human auditory system.2. Learning IPA Symbols for EnglishOnce you have a good grasp of the basics of phonetics, you can begin to learn the IPA symbols for English. This includes understanding the vowel and consonant sounds of English, as well as diphthongs and allophones. It is important to memorize the IPA symbols for each sound, as well as understanding the articulatory and acoustic properties of each sound. Practical exercises, such as transcribing English words and phrases into IPA symbols, can help reinforce your understanding of these concepts.3. Understanding IPA Symbols for Other LanguagesIn addition to learning the IPA symbols for English, it is also important to familiarize yourself with the IPA symbols for other languages. This includes understanding the vowel and consonant sounds of languages such as Spanish, French, German, Chinese, and Arabic, among others. By comparing and contrasting the sounds of different languages, you can gain a deeper understanding of the universal and language-specific properties of speech sounds.4. Practical Application and Transcription ExercisesPractical application and transcription exercises are essential for mastering the IPA. This includes transcribing spoken language into IPA symbols, as well as using IPA symbols to transcribe and analyze speech sounds in different languages. Practical exercises can include transcribing natural speech, reading aloud passages in different languages, and analyzing the phonetic properties of speech sounds in laboratory settings. By applying your knowledge of phonetics and phonology in real-world contexts, you can improve your skills and deepen your understanding of the IPA system.5. Advanced Topics in IPAOnce you have mastered the basics of phonetics and the IPA symbols for English and other languages, you can move on to more advanced topics in IPA. This can include studying suprasegmental features of speech, such as stress, intonation, and rhythm, as well as learning about diacritics and phonetic transcription conventions. You can also explore the application of IPA in language teaching, speech pathology, and linguistic research, as well as studying the historical development and current usage of IPA in different academic and professional fields.6. Resources for Learning IPAThere are many resources available for learning IPA, including textbooks, online courses, academic journals, and professional organizations. It is important to take advantage of these resources to deepen your understanding of the IPA system and to stay current with developments in the field of phonetics and phonology. You can also collaborate with classmates, professors, and professionals in the field to expand your knowledge and share your insights and experiences with others.Overall, learning IPA is a valuable and essential skill for anyone who wants to understand the sounds of language and to communicate effectively in different linguistic and cultural contexts. By following this comprehensive study plan, you can improve your understanding of phonetics and phonology, deepen your knowledge of the IPA system, and enhance your skills in language education, speech pathology, and related fields. Good luck with your studies, and enjoy the journey of learning and mastering the International Phonetic Alphabet!。
DPD在ADS中的应用+Adaptive+RF+Predistortion+of+Power+Amplifiers
Seminar: Gain Without PainNovember 2000RF Predistortion of Power Amplifiers Shawn StapletonAgilent Technologies1400 Fountaingrove ParkwaySanta Rosa, CA 95403AbstractWith the advent of linear modulation methods, linearization of power amplifiers has become an important technology. The adaptive work function predistorter is an approach to optimizing out-of-band intermodulation performance. This technique can adapt to changes in the power amplifier’s characteristics, including effects such as temperature changes, channel switching, power supply variation, and transistor degradation. The technique can also handle larger bandwidths than current DSP-based digital predistorters.BiographyDr. Shawn P. Stapleton has 17 years of experience in the design of RF and microwave circuits and systems. He is presently professor of electrical engineering at Simon Fraser University as well as a consultant for Agilent EEsof. He has developed GaAs MMIC components, including mixers, amplifiers, frequency dividers and oscillators. His most recent work includes digital signal processing, mobile communications and RF/microwave systems.3Agenda & Topics•Introduction to Adaptive RF Predistortion •Key Features: RF Predistortion Techniques & Concepts •RF Predistortion Design Example•ConclusionRF Predistortion of Power AmplifiersThis section of the workshop provides an introduction to predistortion. We will cover key features, technologies, and performance issues. Approaches to solving some of the design challenges will also be presented. An adaptive work function based predistorter is demonstrated using the Agilent Advanced Design System. Additional reference information is also available.4Technology Overview•FeedForward Linearization–Based on inherently wideband technology•Digital Predistortion–Limited Bandwidth (DSP implementation)•Cartesian Feedback–Stability considerations limit bandwidth and accuracy•LINC–Sensitive to component drift and has a high level of complexity•Dynamic Biasing–Limited ACI suppression•RF-Based Predistortion–Limited accuracy of function model–Implemented at RF with low complexity–Adaptation is requiredLinearization approaches:Of the various linearization techniques that have been developed, predistortion is the most commonly used. The concept behind predistortion calls for the insertion of a nonlinear module between the input signal and the power amplifier. The nonlinearmodule generates IM distortion that is in anti-phase with the IM distortion produced by the power amplifier, thereby reducing out-of-band emissions.The RF-based predistorter has two distinct advantages over other approaches. First, the correction is applied before the power amplifier where insertion loss is less critical.Second, the correction architecture has a moderate bandwidth.Digital predistortion technique are more complex, but provide better IM distortionsuppression. However, bandwidths are low due to limited DSP computational rates.Cartesian feedback are relatively less complex and offers reasonable IM distortionsuppression, but stability considerations limit the bandwidth to a few hundred KHz.The LINC technique converts the input signal into two constant envelope signals that are amplified by Class C amplifiers, and then combined, before transmission. Consequently,they are very sensitive to component drift.Dynamic biasing is similar to predistortion, however the work function operates on the power amplifier’s operating bias.Feedforward linearization is the only strategy that simultaneously offers wide bandwidth and good IM distortion suppression. The price for this performance is higher complexity.Automatic adaptation is essential to maintain performance.5RF-Based PredistortionRF input Envelope Detector Power AmplifierRF OutputWork Function or Look-up TableDSPOptimization ofParameters Complex GainAdjuster I QOut of BandFilterPower DetectorDelayThe linearizer creates a predistorted version of the desired modulation. The predistorter consists of a complex gain adjuster that controls the amplitude and phase of the input signal. The amount of predistortion is controlled by two nonlinear work functions that interpolate the AM/AM and AM/PM nonlinearities of the power amplifier.Note that the envelope of the input signal is an input to the work functions. The feedback path samples a portion of the undesired spectrum. The work function parameters are then adjusted by the DSP to minimize the undesired signal. The undesired signal istypically the adjacent channel power.6Spectrum at the NodesRF input Envelope Detector Power AmplifierRF OutputWork Function or Look-up TableDSPOptimization ofParameters Complex GainAdjuster I QOut of BandFilterPower DetectorDelayGiven a two-tone input signal, we can observe the spectral response at various nodes in the RF predistorter. The function of the envelope detector is to extract the amplitudemodulation of the input RF signal. The delay line in the upper branch compensates for the time delay added as the envelope passes through the work function. The complex gain adjuster, once optimized, provides the inverse nonlinear characteristics to those of the power amplifier. Thus, we can observe the spectral growth from the predistorter at the input node of the power amplifier. Ideally the IM products will be equal in amplitude, but anti-phase the IM products created as the two tones pass through the power amplifier.The out-of-band filter samples the adjacent power interference (ACPI). The function of the DSP is to slowly adapt the work function parameters so that the ACPI is minimized.7Design Techniques• Generic RF predistortion techniques– Work function (I.e. polynomial, exponential)– Look-up table– Analog nonlinearity (I.e. Diodes)• Generic adaptation techniques...– ACI power minimization– Gradient evaluationRF-Based PredistortionIn the mid-’80s and early ’90s, many patents were filed covering adaptive predistortion.These patents encompass two general adaptation methods—adaptation based on power minimization and adaptation based on gradient signals.The control scheme for power-minimization adaptation is based on trying to adjust the complex gain adjuster to minimize the measured power of the error signal in the out-of-band frequency. Once the optimum parameters have been achieved, deliberateperturbations are required to continuously update the coefficients, which reduces the effects of IM distortion suppression.Adaptation based on the use of gradient signals requires a continuous computation to estimate the gradient of a three-dimensional power surface. The surface for the RFpredistorter circuit is the difference between the input signal and the scaled output signal.This power is minimized when the error signal is completely suppressed. Since the gradient is continually updated, no deliberate misadjustment is required.There are three distinct RF predistortion techniques.The work function-based approach utilizes a low-order polynomial to fit the AM/AM and AM/PM characteristics of the power amplifier.The look-up table technique fits the power amplifier’s characteristics more accurately.However, it requires a more sophisticated adaptation technique.The analog nonlinearity technique uses diodes to generate IM distortion. This IMdistorition is then phased and attenuated to make it anti-phase with the distortion created by the power amplifier.8Rectangular Work Function PredistorterRectangular Gain FunctionF(ρ) = F 1(ρ) + j • F 2(ρ)F 1(ρ) = (1+G 1 • ρ+G 2 • ρ2)F 2(ρ) = (1+P 1 • ρ+P 2 • ρ2)ρ is squared envelopeLPFI G1G2P2P1Delay EnvelopeDetector From DSP ρQ The rectangular work function implementation requires the use of a complex gain adjuster,which has in-phase and quadrature controls. The work function consists of a simple second-order polynomial expressed in terms of the squared envelope. When this function is multiplied by the input signal in the complex gain adjuster, a fifth-order polynomial isproduced which is expressed in terms of the signal envelope. There are four parameters that are slowly adapted by the DSP or microprocessor, with the ultimate goal of minimizing the adjacent channel power interference.9ACI Power MinimizationD/A D/A Digital SignalProcessing A/DBandpass FilterIQOPower DetectorLocal Oscillator WorkfunctionThis adaptation controller is representative of the “minimum power” principle applied to RF predistortion. The I and Q control voltages are adjusted to minimize the power in port O , which is a sample of the interference created in the adjacent channel.Drawbacks to this method are slow convergence to minimum and sensitivity tomeasurement noise, especially near minimum. Power measurements are inherently noisy,therefore long dwell times are required at each step to reduce the variance of the measurement.Two methods have been devised to mitigate this problem. In the first, a tunable receiver is used to select a frequency band that includes only distortion, and then the controller works to minimize this quantity. Another approach subtracts a phase- and gain-adjusted replica of the input from the output. Ideally, this leaves only the distortion, which is then fed into port O and used in the minimization algorithm.10ADS RF Predistortion SimulationSimulation Parameters:1) Two-tone modulation (Fc =850 MHz, ∆= 1MHz )2) Fifth-order polynomial work function3) Adjacent channel power minimization4) Dwell time of 450 µsec per iteration5) Iterative LMS adaptation between α3 and α56) Motorola power amplifier7) Ideal passive components assumedThe Advanced Design System RF predistorter simulation example is based on the rectangular work function technique. In this approach we utilize the secant method to adapt the work function coefficients to minimize ACPI. The four coefficients are iteratively adjusted with 450 microseconds of power averaging. A Motorola poweramplifier is used in the cosimulation, and the passive components, such as power splitters and combiners, are assumed to be ideal.For demonstration purposes, a two-tone input centered on 850 MHz is used.11ADS RF Predistortion CircuitRF Input RF Input RF OutputRF Output Power AmplifierPower Amplifier LMS AdaptationLMS Adaptation ACI Power DetectorACI Power Detector PredistorterPredistorter Here is the Advanced Design System circuit schematic for the RF predistorter. The adaptation technique is based on the power-minimization method. The rectangularimplementation is used for the complex gain adjuster, and the input consists of a two-tone modulation. The least-mean-squared adaptation technique is used.12Power Amplifier used in RF PredistorterMotorola Power AmplifierMotorola Power Amplifier RF Input RF Input RF OutputRF Output MOSFETMOSFET A Motorola power amplifier is used in this example.13Coefficient values for RF PredistorterAdaptive RF Predistorter Using Rectangular Coordinate Work Function3rd Order Re{α} 3rd Order Re{α} 3rd Order Im{α} 3rd Order Im {α} Time (us)Time (us)C o e f f i c i e n t v a l u e C o e f f i c i e nt v a l ue Notice in this adaptation example that the real third-order coefficient is adapted first,followed by the imaginary third-order coefficient. The coefficients adapt slowly—a dwell time of 450 microseconds is used to obtain a stable output power measurement.Instability can occur if proper attention is not paid to the adaptation procedure. The fifth-order coefficients are adapted using the same approach.14Adaptive RF Predistorter Using Rectangular Coordinate Work FunctionTime (µs)Time (µs)d B c (10d B /D i v )d B c(10d B /D i v)13 dB Improvement (3rd)13 dB Improvement (3rd)Third-Order IM Distortion PerformanceThis plot demonstrates the improvement in third-order intermodulation levels at the output of the RF predistorter.15Two-Tone Simulation of RF PredistorterAdaptive RF Predistorter Using Rectangular Coordinate Work Function13 dB IMD Reduction13 dB IMD Reduction Before Before AfterAfter Frequency (1MHz/Div)Frequency (1MHz/Div)IMD ProductsIMD Products Frequency (1MHz/Div)Frequency (1MHz/Div)The plot on the left reveals the effects of driving the power amplifier at 5dB back-off.High levels of intermodulation power and harmonics are generated. The plot at right shows the improvement in the output from the RF predistorter once the coefficients have adapted. We can observe the spectral growth that occurs using a predistorter. The adjacent channel power is spread over a wider bandwidth, but mask requirements can be meet.16SummaryG The ADS RF predistorter design example demonstrates the performance achievable with linearization.G System level simulation provides a solid starting point for building an implementation quickly.GDesigned components can be integrated into a system to witness the impact on overall performance.Design SolutionsRF Based PredistortionG Adaptive RF predistorters are moving from the research to the development phase.。
光波导的应用 英语
光波导的应用英语Optical Waveguide ApplicationsOptical waveguides are a fundamental component in the field of photonics, enabling the efficient transmission and manipulation of light signals. These waveguides, which can be made from a variety of materials, including glass, silicon, and polymers, have become increasingly important in a wide range of applications, from telecommunications to medical diagnostics and beyond.One of the primary applications of optical waveguides is in the field of telecommunications. Optical fiber networks, which rely on waveguides to transmit data, have revolutionized the way we communicate, allowing for the rapid transfer of vast amounts of information over long distances with minimal signal loss and interference. These fiber-optic networks are the backbone of modern global communication, supporting everything from high-speed internet and video streaming to voice communication and data transfer.In addition to telecommunications, optical waveguides have found widespread use in the field of medical diagnostics and imaging.Endoscopes, which are used to examine the interior of the human body, often incorporate optical waveguides to transmit light and images from the tip of the endoscope to the viewing device. This allows doctors to visually inspect hard-to-reach areas of the body, such as the gastrointestinal tract or the respiratory system, without the need for invasive surgery. Furthermore, optical waveguides are used in various medical imaging techniques, such as optical coherence tomography (OCT), which can provide high-resolution, three-dimensional images of internal structures, enabling early detection and diagnosis of various medical conditions.Another important application of optical waveguides is in the field of sensing and monitoring. Waveguide-based sensors can be used to detect a wide range of physical, chemical, and biological parameters, such as temperature, pressure, strain, and the presence of specific molecules or compounds. These sensors can be integrated into a variety of systems, from industrial machinery to environmental monitoring equipment, providing real-time data and enabling the early detection of potential issues or changes in the monitored environment.Optical waveguides also play a crucial role in the development of advanced photonic devices, such as lasers, amplifiers, and switches. These components can be integrated into waveguide-based circuits, known as photonic integrated circuits (PICs), which can perform avariety of functions, including signal processing, wavelength division multiplexing, and optical switching. PICs have a wide range of applications, from high-speed data transmission to optical computing and quantum information processing.Furthermore, optical waveguides have found use in the field of optical sensing and metrology. Interferometric sensors, which rely on the interference of light waves, can be constructed using waveguides to measure a variety of physical parameters, such as displacement, vibration, and refractive index changes. These sensors are highly sensitive and can be used in a range of applications, from structural health monitoring to the detection of small-scale phenomena, such as gravitational waves.In the field of biophotonics, optical waveguides are used to guide light into and out of biological samples, enabling a wide range of applications, such as fluorescence microscopy, optical tweezers, and optogenetics. These techniques allow researchers to study and manipulate biological systems at the cellular and molecular level, leading to advancements in fields like biomedical imaging, tissue engineering, and drug discovery.Finally, optical waveguides are also finding applications in the field of energy and the environment. Waveguide-based solar concentrators, for example, can be used to efficiently collect and transport solarenergy, while waveguide-based sensors can be employed for environmental monitoring and the detection of pollutants or contaminants in water, air, and soil.In conclusion, the applications of optical waveguides span a vast and diverse range of fields, from telecommunications and medical diagnostics to sensing, photonic devices, and energy systems. As the field of photonics continues to evolve, the importance of optical waveguides is likely to grow, driving further advancements and innovations in technology and scientific research.。
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
1 Introduction
Detection of the amplitude and phase of an RF signal is widely required in many subsystems of a particle accelerator, such as LLRF systems [1–8], beam diagnostics [9–11], and synchronization systems [12–14]. In LLRF
Zhe-Qiao Geng1 • Roger Kalt1
Received: 22 February 2019 / Revised: 3 June 2019 / Accepted: 6 June 2019 Ó China Science Publishing & Media Ltd. (Science Press), Shanghai Institute of Applied Physics, the Chinese Academy of Sciences, Chinese Nuclear Society and Springer Nature Singapore Pte Ltd. 2019
The major requirements for an RF detector include accuracy, precision, and response latency. With an accurate measurement of the RF amplitude and phase, we are able to capture the exact changes in the RF field that are really encountered by the beam. A precise RF detector is able to detect small changes in the RF field or, in other words, provide high-resolution RF measurements. The latency of the RF detector is critical when using an RF feedback loop for which the overall loop delay will limit the closed-loop bandwidth that the feedback loop can achieve [15, 16]. Generally, an RF detector with high accuracy, high precision, and low latency is required in many LLRF systems.
NUCL SCI TECH (2019)30:146 (0123456789().,-volV()0123456789().,-volV)
https:///10.1007/s41365-019-0670-7
Advanced topics on RF amplitude and phase detection for lowlevel RFel radio frequency (LLRF) systems stabilize the electromagnetic field in the RF cavities used for beam acceleration in particle accelerators. Reliable, accurate, and precise detection of RF amplitude and phase is particularly important to achieve high field stability for pulsed accelerators of free-electron lasers (FEL). The digital LLRF systems employ analog-to-digital converters to sample the frequency down-converted RF signal and use digital demodulation algorithms to calculate the RF amplitude and phase. Different sampling strategies and demodulation algorithms have been developed for these purposes and are introduced in this paper. This article focuses on advanced topics concerning RF detection, including accurate RF transient measurement, wideband RF detection, and RF detection with an asynchronous trigger, local oscillator, or clock. The analysis is based on the SwissFEL measurements, but the algorithms introduced are general for RF signal detection in particle accelerators.
& Zhe-Qiao Geng zheqiao.geng@psi.ch
1 Paul Scherrer Institut (PSI), 5232 Villigen PSI, Switzerland
systems, the RF detector is one of the key devices used to diagnose and control the RF fields in the cavities used for beam acceleration.