2SK1637-E中文资料

2
1
1
TC = –25°C 25°C 75°C
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
20 Pulse Test 16 ID = 5 A 12
元器件交易网
2SK1637
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AD-A
Package Name TO-220FM / TO-220FMV
1.0
TC = 25°C
0.1
θch–c (t) = γS (t) • θch–c θch–c = 3.57°C/W, TC = 25°C PDM
se Pul
0.05
0.02
0.03 0.01 10 µ
0.01 hot 1S
T 1m 10 m 100 m
PW
D = PW T
100 µ
1
10
Pulse Width PW (S)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
10 VDS = 20 V Pulse Test 5 2 1 0.5 TC = –25°C 25°C 75°C
8
6
ID = 5 A 2A
2SK1637
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
8 2A 1A 0 4 8 12 16 20
4
Static Drain to Source on State Resistance RDS (on) (Ω)
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
Ciss
Reverse Recovery Time trr (ns)
500
200 100 50 20 di/dt = 100 A/µs, VGS = 0 Ta = 25°C 0.2 0.5 1 2 5
Capacitance C (pF)
100 Coss
10 Crss VGS = 0 f = 1 MHz 0 0 10 20 30 40 50
600 VDS ID = 4 A 200 VDD = 400 V 250 V 100 V 0 8 16 24 32
400
8
4
0
0 40
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Reverse Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
3
3
IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
元器件交易网
2SK1637
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3 0.2
0.1
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
元器件交易网
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 Ω VDD = 30 V td (on) Vin 10% 10%
Waveforms 90%
10% 90% td (off)
90% tr
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
5 10 V 6V 5V Pulse Test 5
Typical Transfer Characteristics
VDS = 20 V Pulse Test
Drain Current ID (A)
3
4.5 V
Drain Current ID (A)
4
4
3
2 4V VGS = 3.5 V 0 10 20 30 40 50
元器件交易网
2SK1637
Static Drain to Source on State Resistance vs. Temperature
10 VGS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) (Ω)
4 1A 2
0.2 0.1 0.05
0 –40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time
1,000 1,000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
*1
Ratings 600 ±30 4 16 4 35 150 –55 to +150
Unit V V A A A W
*2
Tstg
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 ±30 — — 2.0 — 2.2 — — — — — — — — — Typ — — — — — 1.8 3.5 600 140 25 8 30 60 35 0.9 300 Max — — ±10 250 3.0 2.4 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 2 A, VGS = 10 V, RL = 15 Ω