BC807-25PNP型低频放大器晶体管原厂推荐

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常用二三极管品牌

常用二三极管品牌二三极管（Bipolar Junction Transistor，简称BJT）是一种常见的电子元件，用于放大和开关电路中。

在市场上，有许多知名的二三极管品牌提供各种不同类型和规格的产品。

以下是一些常用的二三极管品牌及其特点：1. 三星电子（Samsung Electronics）：三星电子是全球率先的电子产品创造商之一，也是二三极管领域的知名品牌。

他们的二三极管产品质量可靠，性能稳定。

三星电子提供各种不同类型的二三极管，包括NPN型和PNP型，适合于各种不同的应用场景。

2. 意法半导体（STMicroelectronics）：意法半导体是一家国际知名的半导体公司，也是二三极管领域的重要品牌之一。

他们的二三极管产品具有高性能和可靠性，广泛应用于汽车、工业和消费电子等领域。

意法半导体的二三极管具有低噪声、高频率和高电流等特点，满足不同应用的需求。

3. 松下电器（Panasonic）：松下电器是一家知名的电子产品创造商，也是二三极管领域的重要参预者。

他们的二三极管产品质量可靠，具有良好的性能和稳定性。

松下电器提供各种类型的二三极管，包括功率型和低噪声型，适合于不同的应用场景。

4. 东芝（Toshiba）：东芝是一家日本知名的电子产品创造商，也是二三极管领域的重要品牌之一。

他们的二三极管产品具有高性能和可靠性，广泛应用于各种电子设备中。

东芝的二三极管具有低漏电流、高电流放大倍数和快速开关速度等特点，适合于各种不同的应用需求。

5. NXP半导体（NXP Semiconductors）：NXP半导体是一家全球率先的半导体公司，也是二三极管领域的重要参预者。

他们的二三极管产品具有高性能和可靠性，广泛应用于汽车、通信和工业等领域。

NXP半导体的二三极管具有低噪声、高频率和高电流放大倍数等特点，满足各种不同应用的需求。

以上是一些常用的二三极管品牌及其特点，这些品牌都具有良好的声誉和可靠的产品质量。

807三极管参数

807三极管参数
不同的三极管其型号参数可能各不相同。

以下是两款807三极管的部分参数，供您参考：
●型号：BU807。

这是一款NPN三极管（达林顿），其总耗散功率（Ptot）
为60W，集电极电流（IC）为8A，集电极最大允许电流（ICM）为15A，集电极与基极最高耐压（VCBO）为330V，集电极与发射极最高耐压（VCEO）为150V，发射极与基极最高耐压（VEBO）为6V，集电极与基极反向漏电流（ICBO）为100μA，发射极与基极反向漏电流（IEBO）为3500μA，集电极与发射极饱和电压（VCE(sat)）为1.5V。

它的封装为TO-220。

●型号：BC807(5A\5B\5C)。

这是一款PNP三极管，其品牌为CJ（长电）。

它的完整型号是BC807，管体印字（marking）有5A、5B、5C。

它的封装为SOT-23，极性为PNP，放大系数hFE为100~600，耗散功率PCM为300mW，集电极电流Ic为500mA，频率为100Mhz。

BC系列三极管参数

0mW 45V 30V 6V 200mA 150>C 200MHz - 140MIN TI TO226 Low Power General Purpose BC559C 2N6007 KT3107D00mW 45V 30V 6V 200mA 150>C 200MHz 10 200MIN TI TO226 Low Power General Purpose BC559C 2N6007 KT3107D300mW 45V 30V 6V 200mA 150>C 200MHz 10 350MIN TI TO226 Low Power Low Noise General Purpose BC559C 2N6007 KT3107D 00mW 45V 30V 6V 200mA 150>C 200MHz 10 350MIN TI TO226 Low Power Low Noise General Purpose BC559C 2N6007 KT3107D 300mW 45V 30V 6V 200mA 150>C 200MHz 10 200MIN TI TO226 Low Power General Purpose BC559B 2N5813 KT3107D00mW 45V 30V 6V 200mA 150>C 200MHz 10 140MIN TI TO92 Low Power General Purpose BC214L 2N4058 KT3107D300mW ISV 30V 6V 200mA 150>C 200MHz 10 200MIN TI TO92 Low Power General Purpose BC214L 2N4058 KT3107D300mW 45V 30V 6V 200mA 150>C 200MHz 10 350MIN TI TO92 Low Power Low Noise General Purpose BC214L 2N4058 KT3107D1W 45V 35V 6V 1.5A 150>C 100MHz 20 40/250 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 45V 35V 6V 1.5A 150>C 100MHz 20 63/160 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 45V 35V 6V 1.5A 150>C 100MHz 20 100MIN F TO92 Power General Purpose BC328 2N5819 KT505B 2SA698625m 50V 40V 5V 1A 150>C 100MHz 20 100MIN F TO92 Medium Power General Purpose BC328 2N5819 KT505B 2SA698625m 50V 40V 5V 1A 150> 100MHz 20 250MIN F TO92 Medium Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 45V 35V 6V 1.5A 150>C 100MHz 20 40/100 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981W 30V 25V 6V 1.5A 150>C 100MHz 20 40/250 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 30V 25V 6V 1.5A 150>C 100MHz 20 100MIN F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 30V 25V 6V 1.5A 150>C 100MHz 20 63/160 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA698625mW 30V 25V 5V 1A 150>C 100MHz 20 160MIN F TO92 Medium Power General Purpose BC328 2N5819 KT505B 2SA698625mW 30V 25V 5V 1A 150>C 100MHz 20 250MIN F TO92 Medium Power General Purpose BC328 2N5819 KT505B 2SA6981.1W 30V 25V 6V 1.5A 150>C 100MHz 20 40/100 F TO92 Power General Purpose BC328 2N5819 KT505B 2SA6981W 45V 35V 6V 1.5A 150>C 100MHz 20 40/250 F TO92 Power General Purpose BC337 2N5818 KT504B1.1W 45V 35V 6V 1.5A 150>C 100MHz 20 63/160 F TO92 Power General Purpose BC337 2N5818 KT504B1.1W 45V 35V 6V 1.5A 150>C 100MHz 20 100MIN F TO92 Power General Purpose BC337 2N5818 KT504B625mW 50V 40V 5V 1A 150>C 100MHz 20 160MIN F TO92 Medium Power General Purpose BC337 2N5818 KT504B625mW 50V 40V 5V 1A 150>C 100MHz 20 250MIN F TO92 Medium Power General Purpose BC337 2N5818 KT504B1.1W 45V 35V 6V 1.5A 150>C 100MHz 20 40/100 F TO92 Power General Purpose BC337 2N5818 KT504B1W 30V 25V 6V 1.5A 150>C 100MHz 20 40/250 F TO92 Power General Purpose BC337 2N5818 KT504B1.1W 30V 25V 6V 1.5A 150>C 100MHz 20 63/160 F TO92 Power General Purpose BC337 2N5818 KT504B1.1W 30V 25V 6V 1.5A 150>C 100MHz 20 100MIN F TO92 Power General Purpose BC337 2N5818 KT504B625mW 30V 25V 5V 1A 150>C 100MHz 20 180MIN F TO92 Medium Power General Purpose BC337 2N5818 KT504B625mW 30V 25V 5V 1A 150>C 100MHz 20 250MIN F TO92 Medium Power General Purpose BC337 2N5818 KT504B1.1W 30V 25V 6V 1.5A 150>C 100MHz 20 40/100 F TO92 Power General Purpose BC337 2N5818 KT504B0mW 50V 45V 5V 500mA 150>C 50MHz - 100MIN PHI SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698310mW 50V 45V 5V 500mA 150>C 100MHz - 100MIN PHI SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 PNP 225mW 50V 45V 5V 500mA 150>C 100MHz - 100MIN MOT SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 P 250mW 50V 45V 5V 500mA 150>C 100MHz - 100MIN SIE SOT323 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 310mW 50V 45V 5V 500mA 150>C 100MHz - 160MIN PHI SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 PNP 225mW 50V 45V 5V 500mA 150>C 100MHz - 160MIN MOT SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 P 250mW 50V 45V 5V 500mA 150>C 100MHz - 160MIN SIE SOT323 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 310mW 50V 45V 5V 500mA 150>C 100MHz - 250MIN PHI SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 PNP 225mW 50V 45V 5V 500mA 150>C 100MHz - 250MIN MOT SOT23 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 P 250mW 50V 45V 5V 500mA 150>C 100MHz - 250MIN SIE SOT323 Low Power General Purpose BCW68 2N5817 KT505B 2SA698 0mW 30V 25V 5V 500mA 150>C 50MHz - 100MIN PHI SOT23 Low Power General Purpose BCW67 2N5817 KT505B 2SA698310mW 30V 25V 5V 500mA 150>C 100MHz - 100MIN PHI SOT23 Low Power General Purpose BCW67 2N5817 KT505B 2SA698P 250mW 30V 25V 5V 500mA 150>C 100MHz - 100MIN SIE SOT323 Low Power General Purpose BCW67 2N5817 KT505B 2SA698310mW 30V 25V 5V 500mA 150>C 100MHz - 160MIN PHI SOT23 Low Power General Purpose BCW67 2N5817 KT505B 2SA698P 250mW 30V 25V 5V 500mA 150>C 100MHz - 160MIN SIE SOT323 Low Power General Purpose BCW67 2N5817 KT505B 2SA698 310mW 30V 25V 5V 500mA 150>C 100MHz - 250MIN PHI SOT23 Low Power General Purpose BCW67 2N5817 KT505B 2SA698P 250mW 30V 25V 5V 500mA 150>C 100MHz - 250MIN SIE SOT323 Low Power General Purpose BCW67 2N5817 KT505B 2SA698 0mW 50V 45V 5V 500mA 150>C 200MHz 10 40MIN MOT SOT23 Low Power General Purpose BCW65R 2N5816 KT504B310mW 50V 45V 5V 500mA 150>C 200MHz 10 100MIN PHI SOT23 Low Power General Purpose BCW65R 2N5816 KT504B NPN 225mW 50V 45V 5V 500mA 150>C 200MHz 10 100MIN MOT SOT23 Low Power General Purpose BCW65R 2N5816 KT504B N 250mW 50V 45V 5V 500mA 150>C 200MHz 10 100MIN SIE SOT323 Low Power General Purpose BCW65R 2N5816 KT504B 310mW 50V 45V 5V 500mA 150>C 200MHz 10 160MIN PHI SOT23 Low Power General Purpose BCW65R 2N5816 KT504B NPN 225mW 50V 45V 5V 500mA 150>C 200MHz 10 160MIN MOT SOT23 Low Power General Purpose BCW65R 2N5816 KT504B N 250mW 50V 45V 5V 500mA 150>C 200MHz 10 160MIN SIE SOT323 Low Power General Purpose BCW65R 2N5816 KT504B 310mW 50V 45V 5V 500mA 150>C 200MHz 10 250MIN PHI SOT23 Low Power General Purpose BCW65R 2N5816 KT504B NPN 225mW 50V 45V 5V 500mA 150>C 200MHz 10 250MIN MOT SOT23 Low Power General Purpose BCW65R 2N5816 KT504B N 250mW 50V 45V 5V 500mA 150>C 200MHz 10 250MIN SIE SOT323 Low Power General Purpose BCW65R 2N5816 KT504B 0mW 30V 25V 5V 500mA 150>C 200MHz 10 40MIN MOT TO236 Low Power General Purpose BCW65 2N5816 KT504B310mW 30V 25V 5V 500mA 150>C 200MHz - 100MIN PHI TO236 Medium Power General Purpose BCW65 2N5816 KT504BN 250mW 30V 25V 5V 500mA 150>C 200MHz - 100MIN SIE SOT323 Medium Power General Purpose BCW65 2N5816 KT504B310mW 30V 25V 5V 500mA 150>C 200MHz - 160MIN PHI TO236 Medium Power General Purpose BCW65 2N5816 KT504BN 250mW 30V 25V 5V 500mA 150>C 200MHz - 160MIN SIE SOT323 Medium Power General Purpose BCW65 2N5816 KT504B310mW 30V 25V 5V 500mA 150>C 200MHz - 250MIN PHI TO236 Medium Power General Purpose BCW65 2N5816 KT504BN 250mW 30V 25V 5V 500mA 150>C 200MHz - 250MIN SIE SOT323 Medium Power General Purpose BCW65 2N5816 KT504B0mW 30V 25V 5V 1A 150>C 50MHz 20 100MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698800mW 30V 25V 5V 800mA 150>C 100MHz 12 100MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 800mW 30V 25V 5V 800mA 150>C 100MHz 12 160MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 800mW 30V 25V 5V 800mA 150>C 100MHz 12 250MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 0mW 60V 45V 6V 1A 150>C 50MHz 20 100MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698800mW 60V 45V 5V 800mA 150>C 100MHz 12 100MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 800mW 60V 45V 5V 800mA 150>C 100MHz 12 160MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 800mW 60V 45V 5V 800mA 150>C 100MHz 12 250MIN SIE TO92 Medium Power General Purpose BC327 2N5819 KT505B 2SA698 0mW 30V 25V 6V 1A 150>C 50MHz 20 100MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B800mW 30V 25V 5V 800mA 150>C 100MHz 12 160MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B800mW 30V 25V 5V 800mA 150>C 100MHz 12 160MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B800mW 30V 25V 5V 800mA 150>C 100MHz 12 250MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B0mW 60V 45V 6V 1A 150>C 50MHz 20 100MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B800mW 60V 45V 5V 800mA 150>C 100MHz 12 100MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B800mW 60V 45V 5V 800mA 150>C 100MHz 12 160MIN SIE TO92 Medium Power General Purpose BC337 2N5818 KT504B0mW 80V 65V 6V 100mA 150>C 150MHz 6 110MIN PHI SOT23 Low Power General Purpose BCV71 2N2222 KT3117A50mW 80V 60V 6V 100mA 150>C 100MHz 6 110/220 CDI SOT23 Low Power General Purpose BCV71 2N2222 KT3117AN 300mW 80V 60V 6V 100mA 150>C 100MHz 6 110/220 MOT SOT23 Low Power General Purpose BCV71 2N2222 KT3117A310mW 80V 65V 6V 100mA 150>C 300MHz 6 110MIN ITT SOT23 Low Power General Purpose BCV71 2N2222 KT3117A250mW 80V 60V 6V 100mA 150>C 300MHz 6 180MIN SIE SOT323 Low Power General Purpose BCV71 2N2222 KT3117AN 300mW 80V 60V 6V 100mA 150>C 300MHz 6 180MIN MOT SOT323 Low Power General Purpose BCV71 2N2222 KT3117A 00mW 80V 60V 6V 100mA 150>C 300MHz 6 290MIN PHI SOT23 Low Power General Purpose BCV71 2N2222 KT3117AN 300mW 80V 60V 6V 100mA 150>C 300MHz 6 290MIN MOT SOT23 Low Power General Purpose BCV71 2N2222 KT3117A 310mW 80V 65V 6V 100mA 150>C 300MHz 6 200MIN ITT SOT23 Low Power General Purpose BCV71 2N2222 KT3117A 250mW 80V 60V 6V 100mA 150>C 300MHz 6 290MIN SIE SOT323 Low Power General Purpose BCV71 2N2222 KT3117AN 300mW 80V 60V 6V 100mA 150>C 300MHz 6 290MIN MOT SOT323 Low Power General Purpose BCV71 2N2222 KT3117A 0mW 50V 45V 6V 100mA 150>C 150MHz 6 110MIN PHI SOT23 Low Power General Purpose BCW71 2N2222 KT3117A00mW 50V 45V 6V 100mA 150>C 300MHz 6 180MIN PHI SOT23 Low Power General Purpose BCW71 2N2222 KT3117AN 300mW 50V 45V 6V 100mA 150>C 300MHz 6 180MIN MOT SOT23 Low Power General Purpose BCW71 2N2222 KT3117A 310mW 50V 45V 6V 100mA 150>C 300MHz 6 110MIN ITT SOT23 Low Power General Purpose BCW71 2N2222 KT3117A 250mW 50V 45V 6V 100mA 150>C 300MHz 6 180MIN SIE SOT323 Low Power General Purpose BCW71 2N2222 KT3117AN 300mW 50V 45V 6V 100mA 150>C 300MHz 6 180MIN MOT SOT323 Low Power General Purpose BCW71 2N2222 KT3117A 00mW 50V 45V 6V 100mA 150>C 300MHz 6 290MIN PHI SOT23 Low Power General Purpose BCW71 2N2222 KT3117AN 300mW 50V 45V 6V 100mA 150>C 300MHz 6 290MIN MOT SOT23 Low Power General Purpose BCW71 2N2222 KT3117A。

BC807-25W中文资料

Q
v
w
mm
1.1 0.8
0.1
0.4 0.3
0.25 2.2 0.10 1.8
1.35 1.15
1.3
0.65
2.2 2.0
0.45 0.23 0.15 0.13
0Hale Waihona Puke 20.2OUTLINE
VERSION
IEC
SOT323
REFERENCES
JEDEC
EIAJ
SC-70
EUROPEAN PROJECTION
D
B
Product speciﬁcation
BC807W
SOT323
E
A
X
y
3
1
e1
bp
e
2
wM B
HE
vM A
A A1
Q
c Lp detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 max
bp
c
D
E
e
e1 HE Lp
emitter cut-off current DC current gain
BC807W BC807-16W BC807-25W BC807-40W DC current gain collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency
MAX.
−50 −45 −5 −500 −1 −200 200 +150 150 +150

BC807-25LT1中文资料

DC Current Gain (IC = –100 mA, VCE = –1.0 V) hFE BC807–16 BC807–25 BC807–40 VCE(sat) VBE(on) 100 160 250 40 — — — — — — — — 250 400 600 — –0.7 –1.2 V V —
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA

BC807贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate TransistorsBC807-16 TRANSISTOR (PNP) BC807-25 BC807-40 FEATURELdeally suited for automatic insertionEpitaxial planar die construction Complementary NPN type available(BC817)a ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Max Unit Collector-base breakdown voltageV CBO I C = -10μA, I E =0 -50 V Collector-emitter breakdown voltageV CEO I C = -10mA, I B =0 -45 V Emitter-base breakdown voltageV EBO I E = -1μA, I C =0 -5 V Collector cut-off currentI CBO V CB = -45V, I E =0 -0.1 μA Collector cut-off currentI CEO V CE = -40V, I B =0 -0.2 μA Emitter cut-off currentI EBO V EB = -4 V, I C =0 -0.1 μA DC current gain h FE(2) h FE(1) V CE = -1V, I C = -100mA 100 600 Collector-emitter saturation voltage V CE (sat)I C =-500mA, I B = -50mA -0.7 V Base-emitter saturation voltage V BE (sat)I C = -500mA, I B = -50mA -1.2 V Transition frequencyf T V CE = -5V, I C = -10mA f=100MHz 100 MHzV CE = -1V, I C = -500mA 40CLASSIFICATION OF h FE (1)RankBC807-16 BC807-25 BC807-40 Range100-250 160-400 250-600 Marking 5A 5B 5CC,Apr,2013 【南京南山半导体有限公司 — 长电贴片三极管选型资料】1100255075100125150BC807Typical Characteristics COLLECTOR CURRENT I C (mA)I h —— AMBIENT TEMPERATURE T a ()℃C,Apr,2013 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

BC807-25PNP型低频放大器晶体管原厂推荐

■FEATURES特點PNP Low Frequency Amplifier Transistor■MAXIMUMRATINGS 最大額定值Characteristic 特性參數Symbol 符號Rating 額定值Unit 單位Collector-Emitter Voltage 集電極發射極電壓V CEO -45V Collector-Base Voltage 集電極-基極電壓V CBO -50V Emitter-Base Voltage 發射極-基極電壓V EBO -5.0V Collector Current—Continuous 集電極電流-連續Ic-500mA■THERMAL CHARACTERISTICS 熱特性Characteristic 特性參數Symbol 符號Max 最大值Unit 單位Total Device Dissipation 總耗散功率FR-5Board(1)T A =25℃溫度爲25℃Derate above25℃超過25℃遞減P D2251.8mW mW/℃Total Device Dissipation 總耗散功率Alumina Substrate 氧化鋁襯底,(2)T A =25℃Derate above25℃超過25℃遞減P D 3002.4mW mW/℃Thermal Resistance Junction to Ambient 熱阻R ΘJA 417℃/WJunction and Storage Temperature]結溫和儲存溫度T J ,T stg-55to+150℃■DEVICEMARKING 打標(BC807-16)=5A(BC807-25)=5B (BC807-40)=5CBC807-16BC807-25BC807-40■ELECTRICAL CHARACTERISTICS電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol 符號Min 最小值Max 最大值Unit 單位■OFF CHARACTERISTICS截止電特性Collector-Emitter Breakdown Voltage 集電極發射極擊穿電壓(Ic=-10mAdc,I B =0)V (BR)CEO -45—VCollector-Base Breakdown V oltage 集電極基極擊穿電壓(Ic=-10uAdc,V EB =0)V (BR)CBS -50—VEmitter-Base Breakdown V oltage 發射極基極擊穿電壓(I E =-1.0uAdc,Ic=0)V (BR)EBO -5.0—VCollector Cutoff Current 集電極截止電流(V CB =-20v)(V CB =-20V,T A =150℃)I CBO ——-100-5.0nA uA ■ON CHARCTERISTICS 導通電特性DC Current Gain 直流電流增益H FE —(I c =-100mA,V CE =-1.0V)807-16807-25807-40100160250250400600(I c =-500mA,V CE =-1.0V)40—Collector-Emitter Saturation Voltage 集電極-發射極飽和壓降(I c =-500mA,IB =-50mA)V CE(sat)—-0.7V Base -Emitter Saturation Voltage 基極-發射極飽和壓降(I c =-500mA,I B =-50mA)V BE(sat)—-1.2V Base-Emitter Voltage 基極-發射極電壓(I c =-500mA,V CE =-1.0V)V BE(on)—-1.2V■SMALL-SIGNAL CHARACTERISTICS小信號特性1.FR-5=1.0×0.75×0.062in.2.Alumina=0.4×0.3×0.024in.99.5%alumina.Current-Gain-Bandwidth Product 電流增益-帶寬乘積(I c =-10mA,V CE =-5.0V,f=100MHz)f T 100—MHz Output Capacitance輸出電容(V CB =-10V,f=1.0MHz)C obo—10pFBC807-16BC807-25BC807-40Typical Characteristics h ——ISO T -23 Package Outline DimensionsSO T -23Suggested Pad LayoutSO T-23 Tape and Reel。

BC807-40

I CBO - COLLECTOR CURRENT (nA) 100
V CB = 40V
Collector-Base Capacitance vs Collector-Base Voltage
40
f = 1.0 MHz
30
10
1
20
3
0.1
10
25
50 75 100 125 T A - AM BIENT TE MPE RATURE (° C)
1
1.5
BC807-16 / BC807-25 / BC807-40
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBE(O N)- BASE-E MITTER ON VOLTAGE (V)
V BESAT - BASE-EMITTER VOLTAG E (V)
V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 20 V VCB = 20 V, TA = 150°C 45 50 5.0 100 5.0 V V V nA µA
125
150
SOT-23 Tape and Reel Data
SOT-23 Packaging Configuration: Figure 1. 0

贴片三极管上文字代表

贴片三极管上的符号代表意义电子装配与调试参赛技巧思索学校的电工电子组在最近几年的比赛中取得了一些成绩，我也有幸加入了这一团队中来，通过主带了三年电子装配与调试项目，再加上同组老师的帮助，汇聚团队的智慧以及参赛学生的心得，谈谈这个项目的一些小技巧。

一、过好元器件的识别与检测关注重积累，遇到没有见过的元件，大家可通过看书或上网搜索的方式来认识，也可以到元器件市场去逛逛，明白元器件符号的表示意思。

一般每个训练选手都会有几本最新并且比较齐全的元器件识别的书，尽可能地掌握基本元器件的检测方法。

合理利用万用表检测，一般学生都要配备两个万用表：一个是机械万用表，一个是数字万用表。

使用时要注意姿势，可以采用类似拿筷子夹东西的方法来检测，既方便又快捷。

同时在元器件识别的时候可以结合一些基本电路，这样对器件的认识有一定的帮助作用。

同时可以掌握基本器件的功能，也能了解基本电路的运用，对整体电路的功能有个很好的帮助。

二、练好焊接基本功每一个参加电子装配与调试比赛项目的选手都知道，掌握焊接这项基本功是很关键的，需要学生每天不厌其烦的练习，从分立元件到集成块再到贴片元件，都需要不断地实践和摸索。

参加比赛的选手也经常在一起交流各自的技巧。

焊接贴片元件时，学生可以利用电烙铁尖头的侧面拖焊，这样操作可使上锡的速度快，焊点成形快、光亮、美观。

如果元器件两脚之间的间距太小时，搭锡的处理也是很关键的，否则一不小心就会导致电路板出现短路，严重时甚至会把电路板烧毁。

去掉搭锡的一种方法是将板子垂直放置，用电烙铁的侧面吸掉，其前提条件是电烙铁保持干净。

另一种方法是将两脚间的锡加热，将板子利用重力的作用，轻轻将多余的锡敲掉。

如今，电路板做得越来越小，板子上出现了大量的贴片元件。

在焊接贴片的时候也有不少讲究，焊贴片集成块时一般先焊接对角的两个点，然后利用拖焊的方法快速焊接，快速处理好搭锡。

焊普通的贴片元件时应先固定一点，再快速焊接另一点，然后用烙铁的侧边擦掉多余的焊锡，使得焊点成斜坡状。

bc807 导通电压

bc807 导通电压BC807是一种PNP型的双极型晶体管，其导通电压是指在什么样的电压下，该晶体管开始导通，正常工作。

在了解BC807导通电压之前，我们先来了解一下晶体管的基本知识。

晶体管是一种三极电子器件，由发射极、基极和集电极组成。

晶体管的工作原理是通过控制基极电流来控制集电极电流，从而实现信号放大、开关控制等功能。

而导通电压是指当基极电压高于某个特定的电压值时，晶体管开始导通，集电极电流开始流动。

BC807晶体管的导通电压通常是指其基极-发射极间的导通电压，也称为BE导通电压。

在BC807的数据手册中，可以找到其导通电压的典型值和最大值。

以BC807-40型号为例，其导通电压的典型值为0.65V，最大值为0.75V。

导通电压是晶体管正常工作的关键参数之一。

在电路设计中，如果未能满足晶体管的导通电压要求，可能会导致晶体管无法正常工作或者工作不稳定。

因此，在选择BC807晶体管时，需要考虑其导通电压的特性，并根据具体的应用需求来确定是否适合使用。

BC807晶体管的导通电压与其结构、材料以及制造工艺等因素有关。

导通电压的大小会影响晶体管的放大倍数、开关速度以及功耗等性能。

一般来说，导通电压越小，晶体管的放大倍数越大，开关速度越快，但功耗也会相应增加。

在实际应用中，BC807晶体管的导通电压需要在设计中合理选择，并考虑到其他电路参数的匹配。

如果导通电压过高，可能会导致信号放大不足，影响电路性能；如果导通电压过低，可能会导致晶体管一直导通，无法实现开关控制。

导通电压还与温度有关。

晶体管的导通电压通常是在特定温度下测量得到的。

温度的变化会影响导通电压的大小，因此在温度变化较大的环境中使用BC807晶体管时，需要考虑其导通电压的温度特性。

BC807晶体管的导通电压是其正常工作的重要参数之一。

在选择和使用BC807晶体管时，需要充分了解其导通电压特性，并根据实际应用需求合理选择。

同时，还需要注意导通电压与其他电路参数的匹配，以确保电路的稳定性和性能。

BC807-25,235;BC807-25,215;BC807,215;BC807-40,215;BC807-16,215;中文规格书,Datasheet资料

1.Product profile1.1General descriptionPNP general-purpose transistors.[1]Also available in SOT54A and SOT54 variant packages (see Section 2).1.2FeaturesHigh current Low voltage1.3ApplicationsGeneral-purpose switching and amplification1.4Quick reference data[1]Pulse test: t p ≤ 300 μs; δ ≤ 0.02.BC807; BC807W; BC32745 V, 500 mA PNP general-purpose transistorsRev. 06 — 17 November 2009Product data sheetTable 1.Product overviewType number Package NPN complementNXPJEITA BC807SOT23-BC817BC807W SOT323SC-70BC817W BC327[1]SOT54 (TO-92)SC-43ABC337Table 2.Quick reference data Symbol ParameterConditions Min Typ Max Unit V CEO collector-emitter voltage open base; I C =10mA--−45VI C collector current (DC)--−500mA I CM peak collector current --−1Ah FEDC current gainI C = −100 mA; V CE =−1V[1]BC807; BC807W; BC327100-600BC807-16; BC807-16W; BC327-16100-250BC807-25; BC807-25W; BC327-25160-400BC807-40; BC807-40W; BC327-40250-6002.Pinning informationTable 3.PinningPin Description Simplified outline SymbolSOT231base 2emitter 3collectorSOT3231base 2emitter 3collectorSOT541emitter 2base 3collectorSOT54A 1emitter 2base 3collectorSOT54 variant 1emitter 2base 3collector123sym01331312sot323_sosym01331001aab347006aaa14932001aab348123006aaa14932001aab447006aaa149323.Ordering information[1]Valid for all available selection groups.[2]Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).4.Marking[1]* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in ChinaTable 4.Ordering informationType number [1]Package NameDescriptionVersion BC807-plastic surface mounted package; 3 leads SOT23BC807W SC-70plastic surface mounted package; 3 leadsSOT323BC327[2]SC-43Aplastic single-ended leaded (through hole) package; 3leadsSOT54Table 5.Marking codesType numberMarking code [1]BC8075D*BC807-165A*BC807-255B*BC807-405C*BC807W5D*BC807-16W 5A*BC807-25W 5B*BC807-40W 5C*BC327C327BC327-16C32716BC327-25C32725BC327-40C327405.Limiting values[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.[2]Valid for all available selection groups.6.Thermal characteristics[1]Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.[2]Valid for all available selection groups.Table 6.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit V CBO collector-base voltage open emitter -−50V V CEO collector-emitter voltage open base; I C =10mA -−45V V EBO emitter-base voltage open collector-−5V I C collector current (DC)-−500mA I CM peak collector current -−1A I BM peak base current -−200mA P tottotal power dissipation BC807T amb ≤ 25 °C [1][2]-250mW BC807W T amb ≤ 25 °C [1][2]-200mW BC327T amb ≤ 25 °C[1][2]-625mW T stg storage temperature −65+150°C T j junction temperature -150°C T ambambient temperature−65+150°CTable 7.Thermal characteristics Symbol ParameterConditions Min Typ Max UnitR th(j-a)thermal resistance from junction to ambient BC807T amb ≤ 25 °C [1][2]--500K/W BC807W T amb ≤ 25 °C [1][2]--625K/W BC327T amb ≤ 25 °C[1][2]--200K/W7.Characteristics[1]Pulse test: t p ≤ 300 μs; δ ≤ 0.02.[2]V BE decreases by approximately 2 mV/K with increasing temperature.Table 8.CharacteristicsT amb = 25 °C unless otherwise specified.Symbol ParameterConditionsMin Typ Max Unit I CBOcollector-base cut-off currentI E = 0 A; V CB = −20 V --−100nA I E = 0 A; V CB = −20 V; T j =150°C--−5μA I EBO emitter-base cut-off current I C = 0 A; V EB = −5 V --−100nAh FEDC current gainI C = −100 mA; V CE = −1 V[1]BC807; BC807W; BC327100-600BC807-16; BC807-16W; BC327-16100-250BC807-25; BC807-25W; BC327-25160-400BC807-40; BC807-40W; BC327-40250-600h FE DC current gainI C = −500 mA; V CE = −1 V [1]40--V CEsat collector-emitter saturation voltageI C = −500 mA; I B = −50 mA [1]--−700mV V BE base-emitter voltage I C = −500 mA; V CE = −1 V [2]--−1.2V C c collector capacitance I E = i e = 0 A; V CB = −10 V; f =1MHz-5-pF f Ttransition frequencyI C = −10 mA; V CE = −5 V; f =100MHz80--MHz分销商库存信息:NXPBC807-25,235BC807-25,215BC807,215BC807-40,215BC807-16,215BC807-40W,115 BC807-16,235BC807-40,235BC807-25W,135 BC807-40W,135BC327-25,112BC327-40,112 BC327,126BC327,116BC327-16,112 BC327-25,116BC327-40,116BC327,412。

BC807-25LT1G中文资料

SOT−23
SOT−23 (Pb−Free)
SOT−23 (Pb−Free)
Shipping† 3000/Tape & Reel 3000/Tape & Reel
10,000/Tape & Reel
BC807−25LT1 BC807−25LT1G
BC807−25LT3 BC807−25LT3G
SOT−23
(IC = −500 mA, IB = −50 mA) Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V) SMALL−SIGNAL CHARACTERISTICS
BC807−16 BC807−25 BC807−40
Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
H E 2.10
2.40
2.64
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES
NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094

COLLECTOR 3
1 BASE
2 EMITTER
3 1
2
SOT−23 CASE 318 STYLE 6
MARKING DIAGRAM
5xx M G G
1
5xx = Device Code xx = A1, B1, or C

bc807导通电压

bc807导通电压BC807是一种通用型PNP型晶体管，它是一种具有较高功率和较高电流放大能力的器件。

导通电压是指在正常工作状态下，晶体管的基极与发射极之间所需的最小电压。

本文将探讨BC807导通电压的特性和应用。

我们需要了解PNP型晶体管的基本结构。

BC807由三个区域组成，分别是P型基区、N型发射区和P型集电区。

当在基极施加正电压时，P型基区与N型发射区之间的PN结正向偏置，使得电子从发射区注入到基区。

这样，基区的电流就被控制，从而控制了集电区的电流。

当基极与发射极之间的电压超过导通电压时，晶体管开始导通。

BC807导通电压的大小与器件的尺寸、结构和材料有关。

一般来说，导通电压越小，晶体管的开关速度越快。

BC807的导通电压一般在0.6V至0.8V之间。

这意味着当基极与发射极之间的电压超过0.6V 至0.8V时，BC807开始导通，集电区的电流开始流动。

BC807导通电压的特性使其在各种电子电路中得到广泛应用。

其中一个重要的应用是作为开关。

由于BC807具有较高的电流放大能力和较小的导通电压，它可以在低电压电路中起到很好的开关作用。

例如，在数字电路中，BC807可以用作逻辑门的输入和输出。

通过控制BC807的导通和截止状态，可以实现不同信号的处理和传输。

另一个应用是作为放大器。

BC807的高电流放大能力使其适用于放大小信号。

通过合理选择电路参数和工作点，可以实现对输入信号的放大和处理。

在音频放大器和功率放大器中，BC807可以提供稳定和可靠的放大性能。

BC807还可以用于电源管理、电流源和电流镜等应用。

在电源管理中，BC807可以用作过载保护和电流限制器。

在电流源和电流镜中，BC807可以稳定地提供特定的电流。

BC807作为一种通用型PNP型晶体管，具有较高的功率和电流放大能力，在各种电子电路中发挥着重要作用。

它的导通电压一般在0.6V至0.8V之间，具有较小的导通电压和较快的开关速度。

通过合理选择电路参数和工作点，可以实现对信号的放大和处理。

BC807-40-TP;BC807-25-TP;BC807-16-TP;中文规格书,Datasheet资料

BC807-16BC807-25BC807-40PNP Silicon General Purpose TransistorsFeatures• Capable of 0.3Watts of Power Dissipation.• Collector-current 0.5A• Collector-base Voltage 50V• Operating and storage junction temperature range: -55O C to +150O C omp onents 20736Marilla Street Chatsworth! "# $ % ! "#TMMicro Commercial Components• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)I C , COLLECTOR CURRENT (mA)Figure 1. DC Current Gainh F E , D C C U R R E N T G A I NI B , BASE CURRENT (mA)Figure 2. Saturation Region I C , COLLECTOR CURRENT (mA)Figure 3. “On” VoltagesV C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )V , V O L T A G E (V O L T S )-1.0-0.8-0.6-0.4-0.2Figure 4. Temperature CoefficientsIC , COLLECTOR CURRENTV , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θBC807-16 thru BC807-40Micro Commercial ComponentsMicro Commercial ComponentsOrdering Information :Device PackingPart Number-T P Tape&Reel;3Kpcs/Reel***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.分销商库存信息:MICRO-COMMERICAL-COBC807-40-TP BC807-25-TP BC807-16-TP。