亿光光耦EL208
亿光EL30系列光耦及过零检测
亿光亿光过零检测过零检测过零检测光耦光耦
驱动大功率交流器件时常用双向可控硅进行功率控制，根据控制方式的不同有过零控制和移相控制。
不管哪种控制都要对零点进行检测，因为双向过控硅的特性是到了交流的零点，可控硅会自动关闭输出。
我们检测零点目的就是可控硅在零点关闭输出后，我们可以根据功率的需求选择时间来重新触发可控硅。
但对于单片机弱电直接控制交流肯定是不现实的，用继电器控制只能实现简单的慢速的开关量控制，而如果要实现功率调节，我们就需要用光特性的固态继电器，这种器件比较贵。
而假如用光耦肯定也是不行的，因为普通的光耦是单向器件，对于交流的网电它是不能实现控制的。
在这种情况下，我们最好的选择就是用EL30XX 系列的光控
可控硅，用得最多的EL3053和EL3083，它们的前端触发电流都是5mA ，隔离电压达到5000Vrms ，适合于对电绝缘特性要求高的工控或医疗电子行业。
EL3053和EL3083的主要区别就是EL3083有过零检测，MOC3053没有过零检测，对于有过零检测功能的EL3083，它每次在过零点的时候会判断有没有光输入，即有没有前置电流If ，如果有If ，那么在这个周期之内，它是导通的，所以它只能决定一个网电源周期内它是不是导通的，而不能决定在一个周期的某一个时刻
开始导通。
基于这种特性我们可以用它来实现过零控制，过零控制的缺点是控制精度低，优点是对电网没有污染。
对于没有过零检测的EL3053来说，它在有光输入的时刻开始到这个周期的结束它都是导通的。
基于这种特性，如果我们已经检测到了零点，我们就可以在零点的时刻开始延时一段时间来输入前置电流If，用它来实现移相检测。
QQ:312066116。
亿光光耦EL3043,温度控制专用光耦
6PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER EL303X, EL304X, EL306X, EL308X SeriesFeatures:• Peak breakdown voltage -250V: EL303X -400V: EL304X -600V: EL306X -800V: EL308X• High isolation voltage between input and output (Viso=5000 V rms )•Zero voltage crossing• Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL303X, EL304X, EL306X and EL308X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac.They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 110 to 380 VAC lines,such as solid-state relays, industrial controls, motors, solenoids and consumer appliances.Applications●Solenoid/valve controls ●Light controls●Static power switch ●AC motor drivers ●E.M. contactors●Temperature controls ●AC Motor starters亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL303XV DRM250V EL304X400EL306X600EL308X800Peak Repetitive Surge Current(pw=1ms,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.6mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F-- 1.5V I F=30mA Reverse Leakage current I R--10µA V R=6V OutputParameter SymbolMin.Typ.*Max.Unit ConditionPeak Blocking Current EL303XEL304XI DRM1--100nAV DRM = Rated V DRMI F=0mAEL306XEL308X500Peak On-state Voltage V TM--3V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL303XEL304XEL306X dv/dt1000--V/µsV PEAK=Rated V DRM, I F=0(Fig. 10)EL308X600--Inhibit Voltage (MT1-MT2voltage above which devicewill not trigger)V INH--20V I F= Rated I FTLeakage in lnhibited State I DRM2--500µA I F= Rated I FT,V DRM=Rated V DRM, off stateTransfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3031EL3041EL3061EL3081I FT--15mA Main terminal Voltage=3V EL3032EL3042EL3062EL3082--10EL3033EL3043EL3063EL3083--5Holding Current I H-280-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 600V for EL306X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK0.63 x 600τRCdv/dt = = 378τRC0.632 x V PEAK τRCdv/dt =50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV TA KT1T2Zero Crossing CircuitOrder InformationPart NumberEL303XY(Z)-Vor EL304XY(Z)-Vor EL306XY(Z)-Vor EL308XY(Z)-VNoteX = Part No. (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V=VDE safety approved optionOption Description Packing quantity None Standard DIP-665units per tube M Wide lead bend(0.4 inch spacing)65units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes Everlight3083denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE optionEL3083YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.11.5±0.11.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光光耦EL3023
6PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER EL301X, EL302X, EL305X SeriesFeatures:• Peak breakdown voltage -250V: EL301X -400V: EL302X -600V: EL305X• High isolation voltage between input and output (Viso=5000 V rms )• Compact dual-in-line package • Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL301X, EL302X and EL305X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac.They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations.Applications●Solenoid/valve controls ●Lamp ballasts●Static AC power switch●Interfacing microprocessors to 115 to 240Vac peripherals ●Incandescent lamp dimmers ●Temperature controls ●Motor controlsSchematic126543Pin Configuration 1. Anode 2. Cathode3. No Connection4. Terminal5. Substrate(do not connect)6. Terminal亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL301XV DRM250V EL302X400EL305X600Peak Repetitive Surge Current(pw=100μs,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.4mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F- 1.18 1.5V I F=10mA Reverse Leakage current I R--10µA V R=6V OutputParameter Symbol Min.Typ.*Max.Unit ConditionPeak Blocking Current I DRM--100nA V DRM = Rated V DRM I F=0mAPeak On-state Voltage V TM-- 2.5V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL301XEL302X dv/dt-100-V/µsV PEAK=Rated V DRM,I F=0 (Fig. 8)EL305X1000--V PEAK=400V,I F=0 (Fig. 8)Transfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3020I FT30mA Main terminal Voltage=3V EL3010EL3021EL3051--15EL3011EL3022EL3052--10EL3012EL3023EL3053--5Holding Current I H-250-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 8. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 400V for EL302X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV T A KT1T20.63 x 400τRCdv/dt = = 252τRC0.632 x V PEAK τRCdv/dt =Order InformationPart NumberEL301XY(Z)-Vor EL302XY(Z)-Vor EL305XY(Z)-VNoteX = Part No. for EL301x (0, 1 or 2)X = Part No. for EL302x, EL305x (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V = VDE safety approved (optional)Option Description Packing quantity None Standard DIP-665 units per tube M Wide lead bend (0.4 inch spacing)65 units per tube S Surface mount lead form65 units per tube S(TA)Surface mount lead form + TA tape & reel option1000 units per reel S (TB)Surface mount lead form + TB tape & reel option1000 units per reel S1 (TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1 (TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes EVERLIGHT3053 denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE (optional)EL3053YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.1 1.5±0.1 1.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Revision : 7Release Date:2014-09-24 17:43:02.011Copyright © 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.7Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin ) 150 °C Temperature max (T smax )200°CTime (T smin to T smax ) (t s )60-120 seconds Average ramp-up rate (T smax to T p ) 3 °C/second maxOtherLiquidus Temperature (T L )217 °C Time above Liquidus Temperature (t L )60-100 sec Peak Temperature (T P )260°C Time within 5 °C of Actual Peak Temperature: T P -5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature 8 minutes max.Reflow times 3 times .Revision : 7Release Date:2014-09-24 17:43:02.012 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.70 DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光红外线接收头电路工作原理.
亿光红外线接收头电路工作原理文章出处:广州市超毅电子有限公司亿光红外线接收头主要应用在机顶盒,红外遥控系统上,亿光代理商超毅电子讲解一下关于接收头的工作原理,从电路,PD晶片以及放大电路中分析亿光红外线接收头的工作原理。
首先大家来看一下亿光红外线接收头的系统框架:从PD(光电二极管及其偏置电路上分析亿光红外线接收头的工作原理:PD晶片感应信号红外光,将接收到的光信号转换成电流信号。
红外线接收头的偏置电路向提供PD提供合理的方向偏置条件;对信号起可变阻抗的功效,消除干扰信号;将有大部分用信号传送到后级放大器。
TA(阻抗变换放大电路在PD和后级放大器之间起阻抗转换作用,将电流信号变换成电压信号;分离感应电流的交流和直流分量。
红外线接收头CGA(可控增益放大电路提供整个模块的主要增益(50-80dB;可以接受指令改变增益;受控于AGC(自动增益控制。
BF(带通滤波器根据信号的频域特征来消除干扰的手段,能消除来自于各种干扰源的干扰信号;通频带宽度为4KHz;优值为7-10以上;中心频率在IC出厂时调好,有多种中心频率供选用。
AGC(自动增益控制电路根据信号的时域特征来消除干扰的手段,能消除各种不同时间特征参数的干扰信号;基于脉冲簇时长和脉冲簇之间的间隙时间等参数,判别有用信号或干扰信号;不同型号的IC,对时间参数的判别依据不同;遇到干扰时,将CGA的增益调到最小,不让干扰信号通过;不会影响有用信号的接收;在黑暗的环境下,AGC将CGA的增益控制到很大的数值,但要保证没有自发的输出。
以上就是亿光红外线接收头的工作原理,根据各电路分析的红外线接收头接收头,亿光代理商超毅电子主推红外线接收头IRM3638系列,如果对于红外线接收头的技术咨询,可直接咨询客服,我们会为您提供技术支持以及应用资料。
免费咨询热线4008-800-932.。
亿佰特E28-2G4M27S 产品规格书说明书
E28-2G4M27S产品规格书SX1280 2.4GHz 500mW SPI 高速LoRa模块目录第一章产品概述 (2)1.1 产品简介 (2)1.2 特点功能 (2)1.3 应用场景 (2)第二章规格参数 (3)2.1 极限参数 (3)2.2 工作参数 (3)第三章机械尺寸与引脚定义 (4)第四章基本操作 (5)4.1硬件设计 (5)4.2软件编写 (5)第五章基本应用 (6)5.1 基本电路 (6)第六章常见问题 (7)6.1 传输距离不理想 (7)6.2 模块易损坏 (7)6.3 误码率太高 (7)第七章焊接作业指导 (8)7.1 回流焊温度 (8)7.2 回流焊曲线图 (8)第八章相关型号 (9)第九章天线指南 (9)9.1 天线推荐 (9)9.2天线选择 (9)修订历史 (10)关于我们 (11)第一章产品概述1.1 产品简介E28-2G4M27S是亿佰特公司设计生产的2.4GHz射频收发模块，发射功率500mW，SPI接口，具有极低的低功耗模式流耗；该模块为小体积贴片型(引脚间距1.27mm)，自带高性能PCB板载天线，采用52MHz工业级高精度低温漂晶振，保证其工业特性和其稳定性能。
采用Semtech公司的SX1280射频芯片，此芯片包含多样的物理层以及多种调制方式，如LoRa、FLRC、GFSK，并可兼容蓝牙协议；特殊的调制和处理方式使得LoRa和FLRC调制的传输距离有显著提升，在原有基础上内置了功率放大器（PA）与低噪声放大器（LNA），使得最大发射功率达到500mW的同时接收灵敏度也获得进一步的提升，在整体的通信稳定性上较没有功率放大器与低噪声放大器的产品大幅度提升；出色的低功耗性能、片上DC-DC和Time-of-flight使得此芯片功功能强大，可用于智能家居、安全系统、定位追踪、无线测距、穿戴设备、智能手环与健康管理等等。
SX1280支持RSSI，用户可以根据需要实现深度的二次开发，亦集成飞行时间(Time of flight)，适用于测距功能。
ELM-2082EWA中文资料
EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:1/5█ Features :█ Applications:● Large emitting dot 0.2" diameter.● Instrument panels● Low power/high brightness.● Digital read out display█ Description :● The ELM-2081 series are alarge emitting area(5.0mmdiameter)LED sources configuredin a 40 dots 5*8 matrix array.● These device is made with whitedots and gray surface.PART NO CHIP C.C. or C.A.Material Emitted ColorELM-2082EWA GaAsP/GaP Orange C.A.OFFICE : NO. 25,Lane 76,Sec.3, Chung Yang Rd., Tucheng 236, Taipei, Taiwan, R.O.C.TEL : 886-2-2267-2000,2267-9936FAX : 886-2-2267-6244,22676189,22676306EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:2/5█ NOTES:1.All dimensions are millimeters ,tolerance is 0.25mm unless otherwise noted.2.Above specification may be changed without notice.Supplier will reserve authority on material change for above specification.EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:3/5█Absolute maximum ratings at Ta = 25℃：Parameter Symbol Rating UnitReverse Voltage Vr5VForward Current If30mAOperating Temperature Topr-40 to +85℃Storage Temperature Tstg-40 to +100℃Soldering Temperature Tsol260 ± 5℃Power Dissipation Pd100mWPeak ForwardCurrent(Duty 1/10 @1KHZ)If(Peak)160mA█Electronic optical characteristics :Parameter Symbol MIN.TYP.MAX.Unit Condition Luminous Intensity Iv 2.8 5.3----mcd If=10mAPeak Wavelengthλp----635----nm If=20mADominant Wavelengthλd----625----nm If=20mASpectrum RediationBandwidth△λ----45----nm If=20mAForward Voltage Vf 1.7 2.0 2.6V If=20mA Reverse Current Ir--------10µA Vr=5VDevice Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:4/5█ Reliability test item and condition:NO Item Test ConditionsTestHours/CycleSample Size Ac/Re1Solder Heat TEMP : 260℃ ± 5 ℃ 5 SEC76 PCS0/1H : +85℃ 30min2Temperature Cycle∫ 5 min50 CYCLE76 PCS0/1L : -55℃ 30minH : +100℃ 5min3Thermal Shock∫ 10 sec50 CYCLE76 PCS0/1L : -10℃ 5min4High TemperatureStorageTEMP : 100℃1000 HRS76 PCS0/15Low TemperatureStorageTEMP : -55℃1000 HRS76 PCS0/16DC Operating Life If = 10 mA1000 HRS76 PCS0/17High Temperature / HighHumidity85℃/85% RH1000 HRS76 PCS0/1Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO:ELM-2082EWA ECN :Page:5/5。
亿光光耦EL814
09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Electro-Optical Characteristics (Ta=25
unless specified otherwise)
Input
Parameter Forward Voltage Input capacitance Symbol VF Cin Min. Typ. 1.2 50 Max. 1.4 250 Unit V pF Condition IF = ± 20mA V = 0, f = 1KHz
Output
Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Symbol ICEO BVCEO BVECO Min 80 6 Typ. Max. 100 Unit nA V V Condition VCE = 20V, IF = 0mA IC = 0.1mA IE = 0.1mA
Transfer Characteristics
Parameter Current Transfer ratio EL814 CTR EL814A 50 0.7 VCE(sat) RIO fc CIO Tr Tf 5×10 10
Symbol
Min 20
Typ. -
Max. 300
Unit
Condition
Option None M S (TA) S (TB) S1 (TA) S1 (TB) S (TU) S (TD) S1 (TU) S1 (TD) Standard DIP-4
8路光耦光电隔离模块
8路光耦光电隔离模块是一种广泛应用的电子元件，主要用于隔离和传输信号，提高系统的稳定性和可靠性。
这种模块具有8个独立的通道，每个通道都包含一个光耦器件，能够实现光电转换和信号隔离。
在模块中，光耦器件是核心部分，它利用光电效应实现电信号和光信号之间的转换。
当电信号输入时，光耦器件将电信号转换为光信号，通过光导纤维传输到接收端。
在接收端，另一个光耦器件将光信号转换回电信号，完成信号的传输和隔离。
与传统的直接连接方式相比，8路光耦光电隔离模块具有很多优点。
首先，它可以有效地隔离输入和输出信号，避免地线环路和公共阻抗等问题，提高系统的抗干扰能力。
其次，它能够避免高低电平之间的直接耦合，保护电路免受电压冲击和电火花的影响。
此外，它还可以减少电路板空间占用，简化电路设计和安装过程。
在实际应用中，8路光耦光电隔离模块被广泛应用于各种需要隔离和传输信号的场合，如通信、电力、工业控制等领域。
它可以替代传统的继电器、变压器等元件，提高系统的性能和稳定性。
同时，由于其体积小、重量轻、易于集成等特点，它也成为了现代电子设备中不可或缺的一部分。
总之，8路光耦光电隔离模块是一种高效、可靠的电子元件，具有广泛的应用前景。
随着电子技术的不断发展，它将继续发挥重要作用，推动电子设备的小型化、智能化和高效化发展。
亿光光电开关ITR20403
ITR20403Features․Fast response time․High sensitivity․Thin and small package․Pb free․This product itself will remain within RoHS compliant versionDescriptionThe ITR20403consists of an infrared emittingdiode and a silicon phototransistor encased ina black thermo-plastic housing. The advantageof the device is the small package. Phototransistorreceives radiation from the IR LED only, andavoids the noise from ambient light.Applications․Camera․Copier․Scanner․Non-contact SwitchingDevice Selection GuideDevice No.Chip MaterialIR1918C GaAlAsPT1918B SiliconAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Ratings UnitPower Dissipation at(or below)25FreePd75mW Air TemperatureReverse V oltage V R5V InputForward Current I F50mAPeak Forward Current (*1)I FP1APulse width100μs,Duty cycle=1%Collector Power Dissipation P C75mWCollector Current I C20mA OutputCollector-Emitter V oltage B V CEO30VEmitter-Collector Voltage B V ECO5V Operating Temperature Topr-25~+85 Storage Temperature Tstg-40~+85 Lead Soldering Temperature (*2)Tsol260Notes: (＊1) tw=100 μsec. , T=10 msec. (＊2) t=5 SecElectro-Optical Characteristics (Ta=25 )ParameterSymbol Min.Typ.Max.Unit Conditions Forward V oltageV F --- 1.2 1.6V I F =20mA Reverse Current I R ------10μA V R =5V InputPeak Wavelength λP ---940---nm I F =20mA Dark CurrentI CEO ---1100nA V CE =10V OutputC-E Saturation V oltageV CE (sat)------0.4V I C =2mA ,Ee=1mW/cm 2Collector Current I C(ON)0.2---5mA V CE =5V , I F =20mA Leakage Current I CEOD------1μA V CE =5V I F =20mA Rise time t r ---15---μsec Transfer CharacteristicsFall timet f---15---μsecV CE =2V I C =1mA R L =1KTypical Electrical/Optical/Characteristics Curves for IRForward Current vs. Ambient Temperature Spectral DistributionForward Current vs. Ambient Temperature Relative Radiant Intensity vs. Angular DisplacementTypical Electro/Optical/Characteristics Curves for PTCollector Power Dissipation vs. Ambient Temperature Collector Dark Current vs. Ambient TemperatureRelative Collector Current vs Ambient Temperature Collector Current vs.IrradiancecPackage DimensionNotes:2.Tolerances unless dimensions 0.2mmReliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below. Confidence level 90%LTPD 10%NO.Item Test Conditions Test Hours/CycleSampleSizeFailureJudgementCriteriaAc/Re1Solder Heat TEMP:260±510 sec22 PCs0/1H:+10015minI c(on)L×0.82Temperature Cycle5 min 300 cycle22 PCs L :LowerspecificationlimitL : -4015min0/1H:+1005min3Thermal Shock10 sec300 cycle22 PCsL : -105min0/14High TemperatureStorageTEMP.:+100 1000 hrs22 PCs0/15Low TemperatureStorageTEMP. : -40 1000 hrs22 PCs0/1 6DC Operating Life V CE=5V IF=20mA1000 hrs22 PCs0/17High Temperature /High Humidity 85/85%R.H.1000 hrs22 PCs0/1Packing Quantity Specification200 pcs/1bag 6bags/1box 10 boxes/1carton2.When using this product, please observe the absolute maximum ratings and the instructionsfor using outlined in these specification sheets. EVERLIGHT assumes no responsibility forany damage resulting from use of the product which does not comply with the absolutemaximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce orcause anyone to reproduce them without EVERLIGHT’s consent.。
亿光光耦含命名规则
CTR (%)
BVeco (V)
Vce (sat) (V)
Iceo (nA)
0.5
20
7
50
1.0
10
7
0.5
50
100
7
0.3
50
15
6 PIN DIP Darlington Photocoupler
Key Features:
• Wide Current Transfer Ratio selections
100
100
7
1.0
100
50
7
1.2
100
17
Current Optocoupler Offering
6-Pin DIP
****Launched***
Input / Output Function
DC Input / Phototransistor Output
Part Numbers
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, CNY17-1, CNY17-2, CNY17-3, CNY17-4, H11A1, H11A2, H11A3, H11A4,
1
6
2
5
3
4
Pin Configuration 1. Anode 2. Cathode 3. No Connection 4. Emitter 5. Collector 6. Base
16
6 PIN DIP Transistor Photocoupler
Model Number
4N32 4N33 4N29 4N30 4N31
2
Photo Coupler Construction
Quectel_EC20_R2.0_硬件设计手册_V1.2
e 3.5.2. 飞行模式 ......................................................................................................................... 29 fid 3.6. 电源设计 ................................................................................................................................ 29
10. 图 31 增加备注 3。
11. 增加射频信号线 Layout 参考指导（5.1.4 章节）。
12. 更新模块耗流数据（表 33）。
13. 增加 GNSS 耗流数据（表 34）。
14. 更新 7.3 章节中模块俯视图。
上海移远通信技术股份ຫໍສະໝຸດ 限公司2 / 83EC20 R2.0 硬件设计手册
目录
3.6.1. 管脚介绍 ......................................................................................................................... 29 3.6.2. 减少电压跌落.................................................................................................................. 30
亿光EL827中文描述
EL827
1 87
2
3 65
4
深圳部：恒信宇０７５５－８３６６ ３０８３
代替：ＴＬＰ５２１－２
特点：
＊ 电流转移比
（ＣＴＲ：５０至６００％时Ｉｆ＝ ５ｍＡ，Ｖｃｅ＝ ５Ｖ）
＊ 之间的高隔离电压输入与输出（Ｖｉｓｏ＝ ５０００Ｖｒｍｓ）＊ 紧凑型小外形封装？无铅，符合。
＊ ＵＬ认可（第ｅ２１４１２９）＊ ＶＤＥ批准（１３２２４９号）＊ ＳＥＭＫＯ批准＊ ＮＥＭＫＯ批准＊ ＤＥＭＫＯ批准＊ＦＩＭＫＯ批准＊ ＣＳＡ批准＊ 认证批准
描述：
该ｅｌ８２７ｓｅｒｉｅｓ设备每包括一个红外发光二极管，光学耦合到一个光电探测器。
封装：８引脚 ＤＩＰ直插与ＳＭＤ贴片
应用范围：
＊ 可编程控制器示意图＊ 系统设备，测量仪器＊ 电信设备
＊ 家用电器，如风扇加热器等。
＊ 信号传输电路之间的不同电位和阻抗
电路原理图引脚说明１，３：阳极２，４：阴极５，７：发射器６，８：收集器
8 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
TIME (S)
EL827深圳部：恒信宇０７５５－８３６６ ３０８３
回流焊温度曲线。
亿光光耦(光电耦合器)的性能特点
亿光光耦（光电耦合器）的性能特点文章出处：广州市超毅电子有限公司亿光光耦的主要优点是单向传输信号,输入端与输出端完全实现了电气隔离,抗干扰能力强,使用寿命长,传输效率高。
它广泛用于电平转换、信号隔离、级间隔离、开关电路、远距离信号传输、脉冲放大、固态继电器(SSR)、仪器仪表、通信设备及微机接口中。
由于光耦的输入阻抗与一般干扰源的阻抗相比较小,因此分压在电耦的输入端的干扰电压较小,它所能提供的电流并不大,不易使半导体二极管发光;由于光电耦的外壳是密封的,它不受外部光的影响;电耦的隔离电阻很大(约1012Ω)、隔离电容很小(约几个pF)所以能阻止电路性耦合产生的电磁干扰。
线性方式工作的电耦是在光耦的输入端加控制电压,在输出端会成比例地产生一个用于进一步控制下一级的电路的电压。
亿光电耦由发光二极管和光敏三极管组成,当发光二极管接通而发光,光敏三级管导通,电耦是电流驱动型,需要足够大的电流才能使发光二极管导通,如果输入信号太小,发光二极管不会导通,其输出信号将失真。
在开关电源,尤其是数字开关电源中,利用线性光耦可构成光耦反馈电路,通过调节控制端电流来改变占空比,达到精密稳压目的。
亿光光耦的技术参数主要有发光二极管正向压降VF、正向电流IF、电流传输比CTR、输入级与输出级之间的绝缘电阻、集电极-发射极反向击穿电压V(BR) CEO、集电极-发射极饱和压降VCE(sat)。
此外,在传输数字信号时还需考虑上升时间、下降时间、延迟时间和存储时间等参数。
电流传输比是光耦的重要参数,通常用直流电流传输比来表示。
当输出电压保持恒定时,它等于直流输出电流IC与直流输入电流IF的百分比。
其公式为：采用一只光敏三极管的光耦,CTR的范围大多为20%～300%(如4N35),而PC817则为80%～160%,达林顿型光耦如4N30)可达100%～5000%。
这表明欲获得同样的输出电流,后者只需较小的输入电流。
因此,CTR参数与晶体管的hFE有某种相似之处。
EL817
EVERLIGHT ELETCRONICS CO., LTDTechnical Data Sheet Photocoupler-RoHS Compliant深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ ＥＬ８１７是台湾亿光（ＥＶＥＲＬＩＧＨＴ）生产的线性光耦，用在电源的反馈回路，用来稳定电压和隔离。
亿光电子的光耦合器可提供各式封装型式 （４－Ｐｉｎ ＳＳＯＰ， ４－Ｐｉｎ ＳＯＰ， ４－Ｐｉｎ ＤＩＰ， ６－Ｐｉｎ ＤＩＰ， ８－Ｐｉｎ ＳＯＰ 与 ８－Ｐｉｎ ＤＩＰ） 且客户可依据产品输出功能，选用适合的产品。
ＥＬ８１７ 亿光光耦合器主要使用在电源设备上，隔离高低 电压的用途。
相关的终端产品应用包括家电、温控、冷气空调（ＨＶＡＣ）、贩卖机、照明控制装置、充电器与交换式的电源供应器。
E -Mail:1091944079@Photocoupler-RoHS Compliant深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍEL817 Series S1 TypeNotes:1.Rank shall be or shall not be marked2.Factory code shall be marked (T: Taiwan / C: China)3.Year date code4.2-digit work week5.All dimensions are in millimeters6.Specifications are subject to change without noticePhotocoupler-RoHS Compliant深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍEL817 SeriesAbsolute Maximum Ratings ( Ta=25°C )UnitRatingParameter SymbolmACurrent I F 50ForwardVVoltage V R 6Input ReversemWDissipation P 70PowermWCollector Power Dissipation P C 150mAOutput CollectorCurrent I C 50VVoltageV CEO 35Collector-EmitterVVoltageEmitter-CollectorV ECO 6Total Power Dissipation Ptot 200 mW＊1 Isolation Voltage Viso 5000rmsVOperating Temperature Topr -55~+110 °CStorage Temperature Tstg -55~+125 °C＊2 Soldering Temperature Tsol 260°C*1 AC for 1 minute, R.H= 40~ 60%RH-Isolation voltage shall be measured using the following method.(1) Short between anode and cathode on the primary side andbetween collector, emitter and base on the secondary side.(2) The isolation voltage tester with zero-cross circuit shall be used.(3) The waveform of applied voltage shall be a sine wave*2 For 10 secondsPhotocoupler-RoHS CompliantEL817 SeriesElectro-Optical Characteristics (Ta=25°C)Parameter Symbol Min. Typ. Max. Unit ConditionForwardV F - 1.2 1.4 V I F =20mA ReverseCurrent I R - - 10 uAV R =4VInputTerminal Ct - 30 250 pF V=0,f=1kHz Collector Dark currentI CEO - - 100 nAV CE =20VOutputCollector- Emitter breakdown voltage BV CEO 35 - - V Ic=0.1mACurrent Transfer ratio CTR 50-600 % I F =5mA ,V CE =5VCollector- Emitter saturation voltageV CE(sat) - 0.1 0.2 V I F =20mA ,Ic=1 mAIsolation resistance R ISO 5×1010 1011 - ΩDC500V,40~60%R.HFlotation capacitance Cf - 0.6 1.0 pF V=0, f=1MHz Cut-off frequency fc - 80 - kHz V CE =5V, I C =2 mA R L =100Ω, -3dBRise time t r - 4 18 us Transfer CharacteristicsFall timet f - 3 18 usV CE =2VI C =2mA,R L =100Ω深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍEL817 Series SupplementEL817 Series RELIABILITY PLANz The reliability of products shall be satisfied with items listed below.Confidence level : 90 % , LTPD : 10 %Classification Test Item Description & Condition (Acc.)Sample FailureCriteriaReferenceStandardOperation Life * Ta = 25±3°CIR: If = 50 mAPt: Pc = 130 mW ( Vf=1.4v) , 1000 hrs 0 / 22 MIL-S-750 : 1026MIL-S-883 : 1005JIS C 7021 : B-1High Temperature / High Humidity Reverse Bias (H3TRB) Ta = 85 ±3°C , Humi. = 85 % rhPt: 80% * Vce (max rating) , 1000 hrs0 / 22 JIS C 7021 : B-11High Temperature Reverse Bias (HTRB) Ta = 105 ±3°CPt: 100% * Vce (Max rating) ,1000 hrs0 / 22 JIS C 7021 : B-8Low Temperature Storage Ta = -50 ±3°C , 1000 hrs 0 / 22 JIS C 7021 : B-12High Temperature Storage Ta = 125 ±3°C , 1000 hrs 0 / 22 JIS C 7021 : B-10MIL-S-883 : 1008 Endurance testAuto clave P = 15 PSIG , Ta = 121 °C ,Humi. = 100 % rh , 48 hrs0 / 22 JESD 22-A102-BTemperature Cycling (Air to Air) 125°C ~ - 55 °C30 ~ 30 min , 100 cycles0 / 22 MIL-S-883 :1010JIS C 7021 : A-4Thermal Shock (Liquid to Liquid) 125 ~ - 55°Ct (dwell) = 5 mint (trans.) = 10 sec , 100 cycles0 / 22 MIL-S-202 : 107DMIL-S-750 : 1051MIL-S-883 :1011Solder Resistance Ta = 260 ±3°Ct (dwell) = 10 ±1 sec 0 / 22 MIL-S-750 : 2031JIS C 7021 : A-1Environmental TestSolder Ability Ta = 230 ±3 °Ct (dwell) = 5 ±1 sec 0 / 22CTR shift > 1.2Vf > U* 1.0Ir > U * 1.0Vce(sat) >U*1.0Bvceo < L*1.0Bveco < L*1.0L :LowSpec.LimitU : Up Spec.LimitMIL-S-883 : 2003JIS C 7021 : A-2深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍEL817 Series2.25 Tubes / Inner Carton3.12 Inner Cartons / Outside Carton深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍEL817 SeriesEL817 Series3. 10 Inner Cartons / Outside CartonTEL:755-36627339集成电路，光电藕合器，三端稳压管，二三极管，电阻电容深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ深圳市恒科信电子有限公司 电子元件一站式 Ｅ－Ｍａｉｌ：１０９１９４４０７９＠ｑｑ．ｃｏｍ。
亿光直插光耦EL3061
6PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER EL303X, EL304X, EL306X, EL308X SeriesFeatures:• Peak breakdown voltage -250V: EL303X -400V: EL304X -600V: EL306X -800V: EL308X• High isolation voltage between input and output (Viso=5000 V rms )•Zero voltage crossing• Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL303X, EL304X, EL306X and EL308X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac.They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 110 to 380 VAC lines,such as solid-state relays, industrial controls, motors, solenoids and consumer appliances.Applications●Solenoid/valve controls ●Light controls●Static power switch ●AC motor drivers ●E.M. contactors●Temperature controls ●AC Motor starters亿光一级代理商超毅电子6Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL303XV DRM250V EL304X400EL306X600EL308X800Peak Repetitive Surge Current(pw=1ms,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.6mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 seconds亿光一级代理商超毅电子Electro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F-- 1.5V I F=30mA Reverse Leakage current I R--10µA V R=6V OutputParameter SymbolMin.Typ.*Max.Unit ConditionPeak Blocking Current EL303XEL304XI DRM1--100nAV DRM = Rated V DRMI F=0mAEL306XEL308X500Peak On-state Voltage V TM--3V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL303XEL304XEL306X dv/dt1000--V/µsV PEAK=Rated V DRM, I F=0(Fig. 10)EL308X600--Inhibit Voltage (MT1-MT2voltage above which devicewill not trigger)V INH--20V I F= Rated I FTLeakage in lnhibited State I DRM2--500µA I F= Rated I FT,V DRM=Rated V DRM, off stateTransfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3031EL3041EL3061EL3081I FT--15mA Main terminal Voltage=3V EL3032EL3042EL3062EL3082--10EL3033EL3043EL3063EL3083--5Holding Current I H-280-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 600V for EL306X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK0.63 x 600τRCdv/dt = = 378τRC0.632 x V PEAK τRCdv/dt =50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV TA KT1T2Zero Crossing CircuitOrder InformationPart NumberEL303XY(Z)-Vor EL304XY(Z)-Vor EL306XY(Z)-Vor EL308XY(Z)-VNoteX = Part No. (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V=VDE safety approved optionOption Description Packing quantity None Standard DIP-665units per tube M Wide lead bend(0.4 inch spacing)65units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 Type6Recommended pad layout for surface mount leadformDevice MarkingNotesEL denotes Everlight3083denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE optionEL3083YWWV 亿光一级代理商超毅电子Tape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.11.5±0.11.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光的光耦el817的工作寿命评估方式
亿光的光耦el817的工作寿命评估方式光耦是一种将输入光信号和输出电信号进行电光转换的器件，广泛应用于各种电子设备中。
其中，亿光的光耦型号el817是一种常用的光耦产品。
在评估el817的工作寿命时，可以考虑以下几个方面：光电转换性能、环境因素、温度、电器荷电量、加电击波和终端压力。
首先，光电转换性能是评估el817工作寿命的重要指标之一。
光电转换性能包括光耦的转换速度、滞后时间和线性度等方面。
在实际应用中，光耦的转换速度要求越高，生命周期就越短。
因此，使用el817作为光耦时，需要根据具体需求选择合适的型号，并根据其提供的转换速度等参数进行评估。
其次，环境因素也会对el817的工作寿命产生影响。
环境因素主要包括湿度、光照强度和尘埃等。
湿度过高会导致光耦内部元件的腐蚀，从而降低工作寿命；光照强度过高会导致光耦内部元件的老化，同样会缩短工作寿命；而尘埃对光耦的外部结构形成阻隔，影响光信号的输入和输出，进而影响光耦的转换性能和工作寿命。
此外，温度对el817的工作寿命也有重要影响。
温度过高会使光耦内部元件的粘结材料老化，导致光电转换性能下降，从而缩短工作寿命。
因此，在设计电路时，需要根据实际环境温度，选择合适的散热措施，以保证el817在合适的温度范围内工作。
同时，电器荷电量也是评估el817工作寿命的重要因素之一。
电器荷电量是指光耦元器件上积累的电荷量，过高的电器荷电量会导致静电放电现象，进而对光电转换性能和工作寿命造成不可逆的损害。
此外，加电击波也是一个重要的评估因素。
在实际应用中，电路开关和继电器的加电冲击会影响光耦的工作寿命。
因此，在电路设计中，需要考虑合适的保护电路来减小电路开关对光耦产生的冲击，从而提高工作寿命。
最后，终端压力也是影响el817工作寿命的因素之一。
终端压力过大，会使光耦内部元件的结构变形，进而影响光电转换性能和工作寿命。
因此，在应用中需要注意处理好终端压力，避免对光耦造成不可逆的损害。
TSL208资料
D 512 × 1 Sensor-Element Organization D 200 Dots-Per-Inch (DPI) Sensor Pitch D High Linearity and UniformityD Wide Dynamic Range ...2000:1 (66 dB)D Output Referenced to Ground D Low Image Lag ...0.5% Typ D Operation to 5 MHz D Single 5-V SupplyDReplacement for TSL208DescriptionThe TSL208R linear sensor array consists of a 512 ×1array of photodiodes and associated charge amplifier circuitry. The pixels measure 120 µm (H) by 70 µm (W)with 125-µm center-to-center spacing and 55-µm spacing between pixels. Operation is simplified by internal control logic that requires only a serial-input (SI)signal and a clock.The TSL208R is intended for use in a wide variety of applications including mark detection and code reading,optical character recognition (OCR) and contact imaging, edge detection and positioning as well as optical linear and rotary encoding.Functional Block Diagram(TOP VIEW)V DD SI CLK AO GND SO V DDTerminal FunctionsDetailed DescriptionThe sensor consists of 512 photodiodes arranged in a linear array. Light energy impinging on a photodiode generates photocurrent, which is integrated by the active integration circuitry associated with that pixel. During the integration period, a sampling capacitor connects to the output of the integrator through an analog switch.The amount of charge accumulated at each pixel is directly proportional to the light intensity and the integration time. The integration time is the interval between two consecutive output periods.The output and reset of the integrators is controlled by a 512-bit shift register and reset logic. An output cycle is initiated by clocking in a logic 1 on SI for one positive going clock edge (see Figures1 and 2)†. As the SI pulse is clocked through the 512-bit shift register, the charge on the sampling capacitor of each pixel is sequentially connected to a charge-coupled output amplifier that generates a voltage output, AO. When the bit position goes low, the pixel integrator is reset. On the 513th clock rising edge, the SI pulse is clocked out of the shift register and the output assumes a high-impedance state. Note that this 513th clock pulse is required to terminate the output of the 512th pixel and return the internal logic to a known state. A subsequent SI pulse can be presented as early as the 514th clock pulse, thereby initiating another pixel output cycle.The voltage developed at analog output (AO) is given by:V out = V drk + (R e) (E e) (t int)where:V out is the analog output voltage for white conditionV drk is the analog output voltage for dark conditionR e is the device responsivity for a given wavelength of light given in V/(µJ/cm2)E e is the incident irradiance in µW/cm2t int is integration time in secondsAO is driven by a source follower with an internal 330-Ω pulldown resistor (no external resistor is required). The output is nominally 0 V for no light input, 2 V for normal white-level, and 3.4 V for saturation light level. When the device is not in the output phase, AO is in a high impedance state.A 0.1 µF bypass capacitor should be connected between V DD and ground as close as possible to the device.†For proper operation, after meeting the minimum hold time condition, SI must go low before the next rising edge of the clock.TAOS031C – OCTOBER 2002Absolute Maximum Ratings †Supply voltage range, V DD –0.3 V to 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, V I –0.3 V to V DD + 0.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input clamp current, I IK (V I < 0 or V I > V DD ) –20 mA to 20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output clamp current, I OK (V O < 0 or V O > V DD ) –25 mA to 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage range applied to any output in the high impedance orpower-off state, V O –0.3 V to V DD + 0.3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous output current, I O (V O = 0 to V DD ) –25 mA to 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous current through V DD or GND –100 mA to 100 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Analog output current range, I O –25 mA to 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, T A –25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, T stg –25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature on connection pad for 10 seconds 260°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD tolerance, human body model 2000 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . †Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.Recommended Operating Conditions (see Figure 1 and Figure 2)TAOS031C – OCTOBER 2002Electrical Characteristics at f clock = 1 MHz, V DD = 5 V, T A = 25°C, λp = 640 nm, t int = 5 ms,R L = 330 Ω, E e = 18 µW/cm 2 (unless otherwise noted)2.PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of thedevice under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU.3.Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percentof analog output voltage (white).4.RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.5.Minimum saturation exposure is calculated using the minimum V sat , the maximum V drk , and the maximum R e .6.DSNU is the difference between the maximum and minimum output voltage in the absence of illumination.7.Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining aftera pixel is exposed to a white condition followed by a dark condition:IL +V out (IL)*V drk V out (white)*V drk100Timing Requirements (see Figure 1 and Figure 2)NOTES:8.Input pulses have the following characteristics: t r = 6 ns, t f = 6 ns.9.SI must go low before the rising edge of the next clock pulse.TAOS031C – OCTOBER 2002Dynamic Characteristics over recommended ranges of supply voltage and operating free-air temperature (see Figure 2)TYPICAL CHARACTERISTICSCLKSIAOFigure 1. Timing Waveforms (each section)AOCLKt Figure 2. Operational Waveforms (each section)TAOS031C – OCTOBER 2002TYPICAL CHARACTERISTICS0.403005007009000.60.8PHOTODIODE SPECTRAL RESPONSIVITY0.2λ – Wavelength – nmN o r m a l i z e d R e s p o n s i v i t y111004006008001000Figure 3TAOS031C – OCTOBER 2002MECHANICAL INFORMATIONNOTES: A.All linear dimensions are in inches (millimeters).B.This drawing is subject to change without notice.C.Pixel centers are located along the center line of the mounting holes.Figure 4. TSL208R Mechanical SpecificationsTAOS031C – OCTOBER 2002PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.NOTICETexas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.LUMENOLOGY is a registered trademark, and TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated.。
EMP208资料
EMP208PRELIMINARY DATA SHEET 17.5 – 20 GHz Power Amplifier MMIC Specifications are subject to change without notice.Dimension: 1000um X 2250um Thickness: 75um ± 13umISSUED DATE: 09-17-04FEATURES• 17.5 – 20.0 GHz Operating Frequency Range • 24.0dBm Output Power at 1dB Compression • 17.0 dB Typical Small Signal Gain•-40dBc OIMD3 @Each Tone Pout 14dBmAPPLICATIONS• Point-to-point and point-to-multipoint radio •Military Radar SystemsCaution! ESD sensitive device.ELECTRICAL CHARACTERISTICS (T a = 25 °C, 50 ohm, VDD=7V, IDQ=180mA)SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITSF Operating Frequency Range17.520.0GHz P1dBOutput Power at 1dB Gain Compression 22.5 24.0 dBm Gss Small Signal Gain14.0 17.0dBOIMD3 Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 14dBm -40 -37 dBc Input RLInput Return Loss-15 -10 dB Output RL Output Return Loss-12 -10 dB Idss Saturate Drain Current V DS =3V, V GS =0V 211 264 317 mA V DD Power Supply Voltage7 8 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 34 oC/W TbOperating Base Plate Temperature-35+85ºCABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION 1,2SYMBOL CHARACTERISTIC VALUE V DS Drain to Source Voltage 8 V V GS Gate to Source Voltage -4 V I DD Drain CurrentIdss I GSF Forward Gate Current 4mAP INInput Power@ 3dB compressionT CH Channel Temperature 150°C T STG Storage Temperature -65/150°C P T Total Power Dissipation3.4W1. Operating the device beyond any of the above rating may result in permanent damage.2. Bias conditions must also satisfy the following equation V DS *I DS < (T CH –T HS )/R TH ; where T HS = ambient temperatureEMP208Specifications are subject to change without notice.Chip Size 1000 x 2250 microns Chip Thickness: 75 ± 13 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns。
el3083光耦参数
el3083光耦参数el3083光耦是一种常用的光电器件，广泛应用于各种电子设备中。
它由发光二极管（LED）和光敏三极管（光电二极管）组成，通过光的转换来实现电信号的隔离和传输。
光耦的参数对于其性能和应用范围具有重要影响，下面将对el3083光耦的主要参数进行详细介绍。
1. 光耦输入电流（IF）：光耦输入电流是指光耦所需的驱动电流，通常以毫安（mA）为单位。
IF值的选择应根据具体应用需求和光耦的额定工作电流范围来确定，过小的IF值可能无法正常驱动光耦，而过大的IF值则可能导致光耦工作不稳定或损坏。
2. 光耦输出电流（IC）：光耦输出电流是指光耦输出端的电流，通常以毫安（mA）为单位。
IC值的大小取决于光耦的响应速度和驱动电流IF的大小，一般情况下，IC值越大，表示光耦的输出能力越强。
3. 光耦输入电压（VF）：光耦输入电压是指光耦的工作电压范围，通常以伏特（V）为单位。
VF值的选择应根据光耦的额定工作电压范围来确定，过小或过大的VF值可能导致光耦无法正常工作或损坏。
4. 光耦输出电压（VCE）：光耦输出电压是指光耦输出端的电压，通常以伏特（V）为单位。
VCE值的大小取决于光耦的输出电流IC和光耦的负载电阻值，一般情况下，VCE值越小，表示光耦的输出能力越强。
5. 光耦绝缘电压（VR）：光耦绝缘电压是指光耦输入端和输出端之间的绝缘电压，通常以伏特（V）为单位。
VR值的大小决定了光耦的隔离性能，一般情况下，VR值越大，表示光耦的隔离能力越强。
6. 光耦响应时间（tR、tF）：光耦响应时间是指光耦从接收到输入光信号到输出电流上升或下降到一定百分比所需的时间。
tR表示上升时间，tF表示下降时间。
光耦的响应时间越短，表示其响应速度越快。
7. 光耦工作温度范围（Tamb）：光耦工作温度范围是指光耦正常工作的环境温度范围。
Tamb值的选择应根据光耦的额定工作温度范围来确定，过高或过低的环境温度可能导致光耦无法正常工作或损坏。
8pin光耦 原理
8pin光耦原理
光耦是一种常见的电子元件，它通过光学原理将输入信号转换为输出信号。
其中，8pin光耦是指该元件具有8个引脚。
下面，我将从人类的视角描述光耦的工作原理，以便让读者更好地理解。
光耦的工作原理非常巧妙。
它由两个主要部分组成：一个发光二极管（LED）和一个光敏三极管（光敏电阻）。
当输入信号加到LED上时，它会发出一束光。
这束光会被传输到光敏电阻上，通过光敏效应将光转换为电信号。
这样，输入信号就被转换为输出信号。
8pin光耦之所以受到广泛应用，是因为它具有多种优势。
首先，它能够实现电气和光学之间的隔离，从而避免了电信号对环境或周围电路的干扰。
其次，光耦具有快速响应的特点，能够实现高速信号传输。
此外，光耦还具有较高的输入电阻和较低的输出电阻，使其在电路中起到了很好的匹配作用。
在实际应用中，8pin光耦有着广泛的用途。
它常用于电力电子设备的控制电路中，能够实现信号隔离和电平转换。
此外，光耦还可以用于电子仪器仪表、通信设备和自动化系统等领域，以实现信号的传输和控制。
总结起来，光耦是一种通过光学原理将输入信号转换为输出信号的电子元件。
8pin光耦由LED和光敏电阻组成，通过发光和光敏效应实现信号的转换。
它具有隔离性强、响应速度快和适配性好等优点，
被广泛应用于各种电子设备中。
希望通过这篇文章，读者能够更好地了解和理解光耦的工作原理。