CY62256NLL-70ZXC中文资料
62256芯片
62256芯片62256芯片是一种静态随机存储器(SRAM)，它具有62256个存储位置，每个位置可以存储8位数据。
下面将详细介绍62256芯片的特点、工作原理以及应用领域。
62256芯片的主要特点如下：1. 高容量：62256芯片共有62256个存储位置，每个位置可以存储8位数据。
因此，它具有较高的存储容量，能够满足大部分存储需求。
2. 快速访问：62256芯片的存取时间较短，能够快速地进行数据的读写操作。
这对于一些对存储速度有要求的应用来说非常重要。
3. 静态存储器：62256芯片是一种静态随机存储器(SRAM)，不需要进行刷新操作，能够实时地保存数据。
这样可以节省系统资源并提高存储效率。
4. 低功耗：62256芯片在存储数据时不需要刷新操作，因此功耗较低。
这对于一些功耗敏感的应用来说非常有优势。
62256芯片的工作原理是通过存储单元和控制电路实现的。
每个存储单元由一个存储电容和一个存储开关组成。
控制电路的作用是控制数据的读写操作，并为存储单元提供所需要的电源和时钟信号。
在读取数据时，控制电路将读取地址发送给存储单元，并打开相应的存储开关，将存储单元中的数据输出到数据总线上。
在写入数据时，控制电路将写入地址和数据发送给存储单元，并打开相应的存储开关，将数据写入到存储单元中。
同时，控制电路还可以根据需要进行数据的复位、使能和屏蔽操作。
62256芯片主要应用于嵌入式系统中，广泛用于各种电子设备中的数据存储和缓存。
它可以存储程序代码、系统配置信息和用户数据等。
常见的应用场景包括计算机、通信设备、医疗设备、工控设备等。
随着科技的进步和应用领域的扩大，62256芯片的应用范围还将继续扩大。
总之，62256芯片是一种高容量、快速访问、低功耗的静态随机存储器。
它适用于各种数据存储和缓存应用，广泛应用于嵌入式系统中。
随着技术的不断发展，我们相信62256芯片将会有更广阔的应用前景。
27256中文资料
s HIGH SPEED:t PD=11ns(TYP.)at V CC=6Vs LOW POWER DISSIPATION:I CC=1µA(MAX.)at T A=25°Cs HIGH NOISE IMMUNITY:V NIH=V NIL=28%V CC(MIN.)s SYMMETRICAL OUTPUT IMPEDANCE: |I OH|=I OL=4mA(MIN)s BALANCED PROPAGATION DELAYS: t PLH≅t PHLs WIDE OPERATING VOLTAGE RANGE: V CC(OPR)=2V to6Vs PIN AND FUNCTION COMPATIBLE WITH 74SERIES51DESCRIPTIONThe M74HC51is an high speed CMOS DUAL2 WIDE2INPUT AND/OR INVERT GATE fabricated with silicon gate C2MOS technology. It contains a2-WIDE2-INPUT AND/OR INVERT GATE and a2-WIDE3-INPUT AND/OR INVERT GATE.The internal circuit is composed of3stages(2 INPUT)or5stages(3INPUT)including buffer output,which enables high noise immunity and stable output.All inputs are equipped with protection circuits against static discharge and transient excess voltage.M74HC51DUAL2WIDE2INPUT AND/OR INVERT GATEPIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODESPACKAGE TUBE T&R DIP M74HC51B1RSOP M74HC51M1R M74HC51RM13TR TSSOP M74HC51TTRTSSOPDIP SOP1/9August2001M74HC512/9INPUT AND OUTPUT EQUIVALENT CIRCUITPIN DESCRIPTIONTRUTH TABLETRUTH TABLEX :Don’t CareABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these conditions isnot implied(*)500mW at 65°C;derate to 300mW by 10mW/°C from 65°C to 85°CPIN No SYMBOL NAME AND FUNCTION 1,12,13,9,10,111A to 1F Data Inputs 2,3,4,52A to 2D Data Inputs 8,61Y to 2Y Data Outputs 7GND Ground (0V)14V CCPositive Supply Voltage1A 1B1C1D1E1F 1Y H H H X X X L XX X H H HL ALL OTHER COMBINATIONSH2A 2B2C2D2Y H H X X L XX H HL ALL OTHER COMBINATIONSHSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7V V I DC Input Voltage -0.5to V CC +0.5V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Current ±20mA I OK DC Output Diode Current ±20mA I ODC Output Current±25mA I CC or I GND DC V CC or Ground Current±50mA P DPower Dissipation 500(*)mW T stg Storage Temperature -65to +150°C T LLead Temperature (10sec)300°CM74HC513/9RECOMMENDED OPERATING CONDITIONSDC SPECIFICATIONSSymbol ParameterValue Unit V CC Supply Voltage 2to 6V V I Input Voltage 0to V CC V V O Output Voltage 0to V CC V T op Operating Temperature -55to 125°C t r ,t fInput Rise and Fall TimeV CC =2.0V 0to 1000ns V CC =4.5V 0to 500ns V CC =6.0V0to 400nsSymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.V IHHigh Level Input Voltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.24.24.2V ILLow Level Input Voltage2.00.50.50.5V4.5 1.35 1.35 1.356.0 1.81.81.8V OHHigh Level Output Voltage2.0I O =-20µA 1.9 2.0 1.9 1.9V4.5I O =-20µA 4.4 4.5 4.4 4.46.0I O =-20µA5.96.0 5.9 5.94.5I O =-4.0mA 4.18 4.31 4.13 4.106.0I O =-5.2mA 5.685.8 5.635.60V OLLow Level Output Voltage2.0I O =20µA 0.00.10.10.1V 4.5I O =20µA 0.00.10.10.16.0I O =20µA 0.00.10.10.14.5I O =4.0mA 0.170.260.330.406.0I O =5.2mA 0.180.260.330.40I I Input Leakage Current6.0V I =V CC or GND ±0.1±1±1µA I CCQuiescent Supply Current6.0V I =V CC or GND11020µAM74HC514/9AC ELECTRICAL CHARACTERISTICS (C L =50pF,Input t r =t f =6ns)CAPACITIVE CHARACTERISTICS1)C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.(Refer to Test Circuit).Average operating current can be obtained by the following equation.I CC(opr)=C PD x V CC x f IN +I CCTEST CIRCUITC L =50pF or equivalent (includes jig and probe capacitance)R T =Z OUT of pulse generator (typically 50Ω)SymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.t TLH t THL Output TransitionTime 2.0307595110ns 4.581519226.07131619t PLH t PHL Propagation DelayTime2.0391********ns4.5132025306.011172126SymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.C IN Input Capacitance 5.05101010pF C PDPower Dissipation Capacitance (note 1)5.032pFM74HC51 WAVEFORM:PROPAGATION DELAY TIMES(f=1MHz;50%duty cycle)5/9M74HC516/9DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX. a10.510.020B 1.39 1.650.0550.065 b0.50.020b10.250.010D200.787 E8.50.335e 2.540.100e315.240.600F7.10.280 I 5.10.201 L 3.30.130Z 1.27 2.540.0500.100Plastic DIP-14MECHANICAL DATAP001AM74HC517/9DIM.mm.inch MIN.TYPMAX.MIN.TYP.MAX.A 1.750.068a10.10.20.0030.007a2 1.650.064b 0.350.460.0130.018b10.190.250.0070.010C 0.50.019c145°(typ.)D 8.558.750.3360.344E 5.86.20.2280.244e 1.270.050e37.620.300F 3.8 4.00.1490.157G 4.6 5.30.1810.208L 0.5 1.270.0190.050M 0.680.026S8°(max.)SO-14MECHANICAL DATAPO13GM74HC518/9DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A 1.20.047A10.050.150.0020.0040.006 A20.81 1.050.0310.0390.041 b0.190.300.0070.012 c0.090.200.0040.0089D 4.95 5.10.1930.1970.201E 6.2 6.4 6.60.2440.2520.260E1 4.3 4.4 4.480.1690.1730.176 e0.65BSC0.0256BSCK0°8°0°8°L0.450.600.750.0180.0240.030TSSOP14MECHANICAL DATAc EbA2AE1D1PIN1IDENTIFICATIONA1LKe0080337DM74HC51 Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.©The ST logo is a registered trademark of STMicroelectronics©2001STMicroelectronics-Printed in Italy-All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-MoroccoSingapore-Spain-Sweden-Switzerland-United Kingdom©http://w 9/9。
常用三极管参数大全
玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理。
CNY70中文资料
Dimensions of CNY70 in mm95 11345www.vishay.Document Number 83751Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423Document Number 83751。
华上芯片介绍
Dongguan Guangsu opto-electronics Co., Ltd.
产 品 介 绍
华上芯片 颜色 芯片型号:
尺 寸 波 长 亮度mcd 电压v
华上芯片 颜色 芯片型号:
尺 寸
波 长
亮度mcd 360-400
电压v
320-360 AOC-612RMM 620-627 红 主推 12miL 360-400 <2.4 光
<2.4
大功率产品
芯片型号:
规格
波长及亮度
电压
<2.7
备注
AOC-541RMM AOC-541YSM
大功率1W红光芯片 (华上） 大功率1W黄光芯片 （华上） 大功率1W红光芯片 (华上） 大功率1W红光芯片 (华上双线）
41*41miL 主推
620-627/7800(mcd)以上 587-592/6600(mcd)以上
公司主页： / 华上光电网址：/电话+886-3-3803801
联系人 :赵凯
13410238513
3500023
0769-81603478 版权所有
0769-89032879
©2012 Dongguan Guangsu.opto-electronics Co., Ltd.
AOC-S09RMM 主推
<2.4
320-360 460-520 <2.4 520-600
黄 光
AOC-S10YSM 9miL 587-592 主推
<2.4
320-360
红 AOC-614RMM 14miL 620-627 光
红 光 双 线 尺寸
AOC-H14RMM 14miL 620-630
CY62256
256K (32K x 8) Static RAMCY62256Features•High speed: 55 ns and 70 ns•Voltage range: 4.5V–5.5V operation •Low active power (70 ns, LL version)—275 mW (max.)•Low standby power (70 ns, LL version)—28 µW (max.)•Easy memory expansion with CE and OE features •TTL-compatible inputs and outputs•Automatic power-down when deselected •CMOS for optimum speed/power•Package available in a standard 450-mil-wide (300-mil body width) 28-lead narrow SOIC, 28-lead TSOP-1, 28-lead reverse TSOP-1, and 600-mil 28-lead PDIP packagesFunctional Description [1]The CY62256 is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected.An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O 0 through I/O 7) is written into the memory location addressed by the address present on the address pins (A 0through A 14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW,while WE remains inactive or HIGH. Under these conditions,the contents of the location addressed by the information on address pins are present on the eight data input/output pins.The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.A 9A 8A 7A 6A 5A 4A 3A 2COLUMN DECODERR O W D E C O D E RS E N S E A M P SINPUTBUFFERPOWER DOWNWE OEI/O 0CE I/O 1I/O 2I/O 3512 x 512ARRA YI/O 7I/O 6I/O 5I/O 4A 10A 13A 11A 12A A 14A 1Logic Block DiagramNote:1.For best practice recommendations, please refer to the Cypress application note “System Design Guidelines ” on .Pin ConfigurationsMaximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Storage Temperature .................................–65°C to +150°C Ambient Temperature withPower Applied...................................................0°C to +70°C Supply Voltage to Ground Potential(Pin 28 to Pin 14)...........................................–0.5V to +7.0V DC Voltage Applied to Outputsin High-Z State [2]....................................–0.5V to V CC + 0.5VDC Input Voltage [2]................................–0.5V to V CC + 0.5V Output Current into Outputs (LOW).............................20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015)Latch-up Current.................................................... > 200 mA12345678910111415162019181721242322Top ViewNarrow SOIC 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 322232425262728125101115141312161918173420217689OEA 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0CE I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)Reverse Pinout22232425262728125101115141312161918173420217689OE A 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0CE I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)12345678910111415162019181721242322Top ViewDIP 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 3Operating RangeRange Ambient TemperatureV CC Commercial 0°C to +70°C 5V ± 10%Industrial–40°C to +85°C5V ± 10%Electrical Characteristics Over the Operating RangeParameter Description Test ConditionsCY62256−55CY62256−70Unit Min.Typ.[3]Max.Min.Typ.[3]Max.V OH Output HIGH Voltage V CC = Min., I OH = −1.0 mA 2.42.4V V OL Output LOW Voltage V CC = Min., I OL = 2.1 mA0.40.4V V IH Input HIGH Voltage 2.2V CC +0.5V 2.2V CC +0.5V V V IL Input LOW Voltage –0.50.8–0.50.8V I IX Input Leakage Current GND < V I < V CC–0.5+0.5–0.5+0.5µA I OZ Output Leakage Current GND < V O < V CC , Output Disabled–0.5+0.5–0.5+0.5µA I CCV CC Operating Supply CurrentV CC = Max., I OUT = 0 mA,f = f MAX = 1/t RC28552855mA L 25502550mA LL25502550mA I SB1Automatic CE Power-down Current — TTL InputsMax. V CC , CE > V IH ,V IN > V IH or V IN < V IL , f = f MAX 0.520.52mA L 0.40.60.40.6mA LL0.30.50.30.5mANotes:2.V IL (min.) = −2.0V for pulse durations of less than 20 ns.3.Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions(T A = 25°C, V CC ). Parameters are guaranteed by design and characterization, and not 100% tested.I SB2Automatic CE Power-down Current — CMOS InputsMax. V CC , CE > V CC − 0.3V V IN > V CC − 0.3V , or V IN <0.3V , f = 01515mA L 250250µA LL 0.150.15µA Indust ’l Temp RangeLL0.1100.110µACapacitance [4]ParameterDescriptionTest ConditionsMax.Unit C IN Input Capacitance T A = 25°C, f = 1 MHz,V CC = 5.0V6pF C OUTOutput Capacitance8pFElectrical Characteristics Over the Operating Range (continued)Parameter DescriptionTest ConditionsCY62256−55CY62256−70Unit Min.Typ.[3]Max.Min.Typ.[3]Max.AC Test Loads and WaveformsData Retention CharacteristicsParameter DescriptionConditions [5]Min.Typ.[3]Max.Unit V DR V CC for Data Retention 2.0V I CCDRData Retention CurrentL V CC = 3.0V , CE > V CC − 0.3V ,V IN > V CC − 0.3V , or V IN < 0.3V250µA LL 0.15µA LL Ind ’l0.110µA t CDR [4]Chip Deselect to Data Retention Time 0ns t R [4]Operation Recovery Timet RCnsData Retention WaveformNotes:4.Tested initially and after any design or process changes that may affect these parameters.5.No input may exceed V CC + 0.5V .3.0V 5V OUTPUTR1 1800ΩR2990Ω100pF INCLUDING JIG AND SCOPEGND90%10%90%10%<5ns<5ns5V OUTPUTR1 1800ΩR2990Ω5pFINCLUDING JIG AND SCOPE (a)(b)OUTPUT1.77VEquivalent to:TH É VENIN EQUIVALENTALL INPUT PULSES 639Ω3.0V 3.0V t CDRV DR >2VDATA RETENTION MODEt RCEV CCSwitching Characteristics Over the Operating Range [6]Parameter Description CY62256−55CY62256−70Unit Min.Max.Min.Max.Read Cycle t RC Read Cycle Time5570ns t AA Address to Data Valid5570ns t OHA Data Hold from Address Change 55ns t ACE CE LOW to Data Valid 5570ns t DOE OE LOW to Data Valid 2535ns t LZOE OE LOW to Low-Z [7]55ns t HZOE OE HIGH to High-Z [7, 8]2025ns t LZCE CE LOW to Low-Z [7]55ns t HZCE CE HIGH to High-Z [7, 8]2025ns t PU CE LOW to Power-up 0ns t PDCE HIGH to Power-down5570ns Write Cycle [9, 10]t WC Write Cycle Time 5570ns t SCE CE LOW to Write End 4560ns t AW Address Set-up to Write End 4560ns t HA Address Hold from Write End 00ns t SA Address Set-up to Write Start 00ns t PWE WE Pulse Width 4050ns t SD Data Set-up to Write End 2530ns t HD Data Hold from Write End 0ns t HZWE WE LOW to High-Z [7, 8]2025ns t LZWEWE HIGH to Low-Z [7]55nsSwitching WaveformsNotes:6.Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specifiedI OL /I OH and 100-pF load capacitance.7.At any given temperature and voltage condition, t HZCE is less than t LZCE , t HZOE is less than t LZOE , and t HZWE is less than t LZWE for any given device.8.t HZOE , t HZCE , and t HZWE are specified with C L = 5 pF as in (b) of AC T est Loads. Transition is measured ±500 mV from steady-state voltage.9.The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal can terminatea Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.10.The minimum Write cycle time for Write cycle #3 (WE controlled, OE LOW) is the sum of t HZWE and t SD 11.Device is continuously selected. OE, CE = V IL .12.WE is HIGH for Read cycle.ADDRESSDATA OUTPREVIOUS DATA VALIDDATA VALIDt RCt AAt OHARead Cycle No. 1[11, 12]Notes:13.Address valid prior to or coincident with CE transition LOW.14.Data I/O is high impedance if OE = V IH .15.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.Switching Waveforms (continued)50%50%DATA VALIDt RCt ACEt DOEt LZOEt LZCEt PUDATA OUTHIGH IMPEDANCEIMPEDANCEICCISBt HZOE t HZCEt PD OECEHIGH V CC SUPPLY CURRENTRead Cycle No. 2 [12, 13]t HDt SDt PWEt SAt HAt AWt WCDATA I/OADDRESSCEWEOEt HZOEDATA IN VALIDNOTE Write Cycle No. 1 (WE Controlled)[9, 14, 15]16t WCt AWt SAt HAt HDt SDt SCEWEDATA I/OADDRESSCEDATA IN VALIDWrite Cycle No. 2 (CE Controlled)[9, 14, 15]Note:16.During this period, the I/Os are in output state and input signals should not be applied.Switching Waveforms (continued)DATA I/OADDRESSt HDt SDt LZWEt SAt HAt AWt WCCEWEt HZWEDATA IN VALIDWrite Cycle No. 3 (WE Controlled, OE LOW)[10, 15]NOTE 16Typical DC and AC Characteristics1.21.41.00.60.40.24.04.55.05.56.01.61.41.21.00.8−5525125−55251251.21.00.8N O R M A L I Z E D tA A120100806040200.01.02.03.04.0O U T P U T S O U R C E C U R R E N T (m A )SUPPLY VOLTAGE (V)NORMALIZED SUPPLY CURRENT vs.SUPPLY VOLTAGENORMALIZED ACCESS TIME vs.AMBIENT TEMPERATURE AMBIENT TEMPERATURE (°C)NORMALIZED SUPPLY CURRENTvs.AMBIENT TEMPERATUREAMBIENT TEMPERATURE (°C)OUTPUT VOLTAGE (V)OUTPUT SOURCE CURRENT vs.OUTPUT VOLTAGE 0.00.81.41.11.00.94.04.55.05.56.0N O R M A L I Z E D t SUPPLY VOLTAGE (V)NORMALIZED ACCESS TIME vs.SUPPLY VOLTAGE 120140*********0.01.02.03.04.0O U T P U T S I N K C U R R E N T (m A )080OUTPUT VOLTAGE (V)OUTPUT SINK CURRENT vs.OUTPUT VOLTAGE0.60.40.20.0N O R M A L I Z E D I C CN O R M A L I Z E D I , I CC S BI CCI CCV CC =5.0VV CC =5.0V T A =25°CV CC =5.0V T A =25°CI SBT A =25°C0.60.80A A1.31.2V IN =5.0V T A =25°C1.4V CC =5.0VV IN =5.0V−55251052.52.01.5CURRENT vs.AMBIENT TEMPERATURE AMBIENT TEMPERATURE (°C)1.00.50.0-0.5I SB3.0STANDBY V CC =5.0V V IN =5.0VI S B 2 µATypical DC and AC Characteristics (continued)3.02.52.01.51.00.50.01.02.03.04.0N O R M A L I Z E D IP OSUPPLY VOLTAGE (V)TYPICAL POWER-ON CURRENT vs.SUPPLY VOLTAGE 30.025.020.015.010.05.00200400600800D E L T A t (n s )AA CAPACITANCE (pF)TYPICAL ACCESS TIME CHANGEvs.OUTPUT LOADING 1.251.000.7510203040N O R M A L I Z E D I C CCYCLE FREQUENCY (MHz)NORMALIZED I CC vs.CYCLE TIME0.0 5.00.010000.50V CC =4.5V T A =25°CV CC =5.0V T A =25°C V IN =0.5VTruth TableCE WE OE Inputs/Outputs ModePowerH X X High-Z Deselect/Power-downStandby (I SB )L H L Data Out Read Active (I CC )L L X Data In WriteActive (I CC )L HHHigh-ZDeselect, Output DisabledActive (I CC )Ordering InformationSpeed (ns)Ordering Code Package Name Package TypeOperating Range 55CY62256LL −55SNI SN2828-lead (300-Mil Narrow Body) Narrow SOIC IndustrialCY62256LL −55ZI Z2828-lead Thin Small Outline Package 70CY62256−70SNC SN2828-lead (300-Mil Narrow Body) Narrow SOICCommercial CY62256L −70SNC CY62256LL −70SNC CY62256L –70SNI IndustrialCY62256LL −70SNI CY62256LL −70ZC Z2828-lead Thin Small Outline PackageCommercial CY62256LL −70ZI Z28Industrial CY62256−70PC P1528-lead (600-Mil) Molded DIP Commercial CY62256L −70PC P15CY62256LL −70PC P15CY62256LL −70ZRIZR2828-lead Reverse Thin Small Outline PackageIndustrialPackage Diagrams51-85017-A28-lead (600-mil)Molded DIP P1551-85092-*B28-lead (300-mil) SNC (Narrow Body) SN28Package Diagrams (continued)CY62256Document #: 38-05248 Rev. *B Page 11 of 11Document Title: CY62256 256K (32K x 8) Static RAM Document Number: 38-05248REV.ECN NO.Issue Date Orig. of Change Description of Change **11345403/06/02MGN Change from Spec number: 38-00455 to 38-05248Remove obsolete parts from ordering info, standardize format *A11522705/23/02GBI Changed SN Package Diagram *B 11650609/04/02GBI Added footnote 1.Corrected package description in Ordering Information table。
HM62256简介及使用建议与学习帮助
HM62256RAM的应用：就像在计算机里面有内存条存在一样，在很多电子产品的电路中，常常会有数据临时存储的应用，单片机通常内部有128个字节或者256个字节的RAM区，但实际应用中，一般来说是不够用的，此时就需要外部扩展RAM。
RAM是随机存储器，特点是掉电就会丢失数据。
RAM有动态RAM（即DRAM）和静态RAM （SRAM）之分。
两者是有很大差别的，DRAM需要刷新电路，操作比较复杂，但是价格便宜。
SRAM价格贵，但是接口及操作很方便。
结合这两者的特点，又产生SDRAM，延伸的有DDR这些RAM，这些RAM应用在不同的场合。
在学习板上，我们选择了SRAM提供给大家了解外部存储器的一个机会。
62256简介：62系列是最常用的单片机系统扩展RAM元器件，其类型有6216、6232、6264、62128、62256或62512等多种，62后面的数字表示此元器件中可以存储的位(单位：千bit)，我们通常的说法是将此值除以8，比如62256将256除以8，我们一般称之为32K的RAM。
如果学习过二进制就可以知道，区分两个字节需要一根地址线就可以：0或者1；而区分四个字节需要2根地址线；区分八个字节需要三根地址线…..以此类推，我们可以计算出要区分32K的RAM区，需要15根地址线，也就是器件上面的A0-A14管脚用于确定唯一的一个字节内容。
我们现在学习的51单片机是8位的，所以必须用两个IO口来联接这个RAM 器件，通常我们用P0（低字节）和P2（高字节）两个端口来确定此器件的地址，而P0口是51单片机标准的总线口，是地址线和数据线复用的，所以与62256联接时需要加一片锁存器来锁存地址。
即先将地址送到锁存器（通常用74HC373）中，然后P0口空闲下来后开始接收或发送数据至62256。
关于地址的一些知识：学习62256的时候不可避免的要用到地址的概念，而地址的知识是区别一个初学者和一个电子工程师的主要的关键点之一，学习单片机里面的指令时，我们常常会发现这样的语句：MOV DPTR，#5000HMOV A，#55HMOVX @DPTR，A看懂和看不懂，是电子知识是否入门的一个标志，下面就地址方面的知识以简单的话来讲解一次：电子产品上面一般只有一个单片机（MCU），就像计算机里面的CPU一样，是这个电子产品的大脑和司令部，外部通常有很多元器件围绕着它，当外围的器件数量不多时，我们可以用单片机上面本身带有的四个端口（共32个管脚）来直接与外围器件进行联系，X101型学习板就是这种形式。
62256中文资料
62256中文资料
62256是32K的低功耗静态RAM存储器. 用P0和P2来扩展外部ram（就是用P0和P2与62256对应的管脚相连接），假设P2.7接WR，P2.6接RD，P2.5接CS，那么就可以确定个外部RAM的一个地址，想往外部RAM的一个地址写一个字节时，地址可以定为XBYTE [0x4000]，其中WR，CS为低，RD为高，那就是高位的4（0100 也就是P2.7和P2.5输出了低电平，而P2.6输出了高电平，目的当然是要选通62256并且向62256写入数据），其它位的可以根据情况自己定（也就是其它位是什么不打紧，关键就是控制wr，cs，rd的那几个位要符合选通，读，写的规定就可以了），现在我们向62256中写个26进去就可以使用这条语句：XBYTE [0x4000] = 26
MCS-51单片机系统扩展时，一般使用P0口作为地址低8位（与数据口分时复用），而P2口作为地址高8位，它共有16根地址总线，寻址空间为64KB。
62256 引脚功能
A0 – A14 地址总线(Address)
D0 /D7 输入/输出口(nput/output)
CS 端口选择(Chip select)
WE 输入始能(Write enable)
OE 输出始能(Output enable)
VCC 电源始能(Power supply)
VSS 接地(Ground)
附图:
62256管脚图
62256与c51的电路连接图。
CY62256NLL-70SNXC资料
256K (32K x 8) Static RAMCY62256NFeatures•Temperature Ranges —Commercial: 0°C to 70°C —Industrial: –40°C to 85°C —Automotive-A: –40°C to 85°C —Automotive-E: –40°C to 125°C •High speed: 55 ns•Voltage range: 4.5V–5.5V operation •Low active power —275 mW (max.)•Low standby power (LL version)—82.5 µW (max.)•Easy memory expansion with CE and OE features •TTL-compatible inputs and outputs •Automatic power-down when deselected •CMOS for optimum speed/power•Available in pb-free and non Pb-free 28-lead (600-mil) PDIP , 28-lead (300-mil) narrow SOIC, 28-lead TSOP-I and 28-lead Reverse TSOP-I packagesFunctional Description [1]The CY62256N is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected.An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O 0 through I/O 7) is written into the memory location addressed by the address present on the address pins (A 0through A 14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW,while WE remains inactive or HIGH. Under these conditions,the contents of the location addressed by the information on address pins are present on the eight data input/output pins.The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.Note:1.For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on .A 9A 8A 7A 6A 5A 4A 3A 2COLUMN DECODERR O W D E C O D E RS E N S E A M P SINPUTBUFFERPOWER DOWNWE OEI/O 0CE I/O 1I/O 2I/O 332K x 8ARRAY I/O 7I/O 6I/O 5I/O 4A 10A 13A 11A 12A A 14A 1Logic Block DiagramCY62256NPin ConfigurationsProduct PortfolioProductV CC Range (V)Speed (ns)Power DissipationOperating, I CC(mA)Standby, I SB2(µA)Min.Typ.[2]Max.Typ.[2]Max.Typ.[2]Max.CY62256NL Com’l / Ind’l 4.55.05.5702550250CY62256NLL Commercial 7025500.15CY62256NLL Industrial 55/7025500.110CY62256NLL Automotive-A 55/7025500.110CY62256NLLAutomotive-E5525500.11512345678910111415162019181721242322Top ViewNarrow SOIC 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 322232425262728125101115141312161918173420217689OEA 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)Reverse Pinout22232425262728125101115141312161918173420217689OE A 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0CE I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)12345678910111415162019181721242322Top ViewDIP 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 3Pin DefinitionsPin Number Type Description1–10, 21, 23–26Input A 0–A 14. Address Inputs11–13, 15–19, Input/Output I/O 0–I/O 7. Data lines. Used as input or output lines depending on operation27Input/Control WE . When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted20Input/Control CE . When LOW, selects the chip. When HIGH, deselects the chip22Input/ControlOE . Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins14GroundGND . Ground for the device28Power Supply V CC . Power supply for the deviceNote:2.Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions (T A = 25°C, V CC ). Parameters are guaranteed by design and characterization, and not 100% tested.CY62256NMaximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Storage Temperature .................................–65°C to +150°C Ambient Temperature withPower Applied..............................................-55°C to +125°C Supply Voltage to Ground Potential(Pin 28 to Pin 14)...........................................–0.5V to +7.0V DC Voltage Applied to Outputsin High-Z State[3]....................................–0.5V to V CC + 0.5V DC Input Voltage[3].................................–0.5V to V CC + 0.5V Output Current into Outputs (LOW).............................20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015)Latch-up Current.................................................... > 200 mA Operating RangeRange Ambient Temperature (T A)[7]V CC Commercial0°C to +70°C 5V± 10% Industrial–40°C to +85°C 5V± 10% Automotive-A–40°C to +85°C 5V± 10% Automotive-E–40°C to +125°C 5V± 10%Electrical Characteristics Over the Operating RangeParameter Description Test Conditions-55-70Unit Min.Typ.[2]Max.Min.Typ.[2]Max.V OH Output HIGH Voltage V CC = Min., I OH = −1.0 mA 2.4 2.4V V OL Output LOW Voltage V CC = Min., I OL = 2.1 mA0.40.4VV IH Input HIGH Voltage 2.2V CC+0.5V 2.2V CC+0.5VVV IL Input LOW Voltage–0.50.8–0.50.8V I IX Input Leakage Current GND < V I < V CC–0.5+0.5–0.5+0.5µA I OZ Output Leakage Current GND < V O < V CC, Output Disabled–0.5+0.5–0.5+0.5µAI CC V CC Operating SupplyCurrent V CC = Max.,I OUT = 0 mA,f = f MAX = 1/t RCL-Comm’l/Ind’l2550mALL-Comm’l2550mALL - Ind’l25502550mALL - Auto-A25502550mALL - Auto-E2550mAI SB1Automatic CEPower-down Current—TTL Inputs Max. V CC, CE > V IH,V IN > V IH or V IN < V IL,f = f MAXL0.40.6mALL-Comm’l0.30.5mALL - Ind’l0.30.50.30.5mALL - Auto-A0.30.50.30.5mALL - Auto-E0.30.5mAI SB2Automatic CEPower-down Current—CMOS Inputs Max. V CC,CE > V CC− 0.3VV IN > V CC− 0.3V, orV IN < 0.3V, f = 0L250µALL-Comm’l0.15µALL - Ind’l0.1100.110µALL - Auto-A0.1100.110µALL - Auto-E0.115µACapacitance[8]Parameter Description Test Conditions Max.UnitC IN Input Capacitance T A = 25°C, f = 1 MHz,V CC = 5.0V 6pFC OUT Output Capacitance8pF Notes:3.V IL (min.)= −2.0V for pulse durations of less than 20 ns.4.T A is the “Instant-On” case temperature.5.Tested initially and after any design or process changes that may affect these parameters.CY62256NThermal Resistance [5]ParameterDescriptionTest ConditionsDIP SOIC TSOP RTSOP Unit ΘJA Thermal Resistance (Junction to Ambient)Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board75.6176.5693.8993.89°C/W ΘJCThermal Resistance (Junction to Case)43.1236.0724.6424.64°C/WAC Test Loads and WaveformsData Retention CharacteristicsParameter DescriptionConditions [6]Min.Typ.[2]Max.Unit V DR V CC for Data Retention 2.0V I CCDRData Retention CurrentLV CC = 2.0V, CE > V CC − 0.3V,V IN > V CC − 0.3V, or V IN < 0.3V250µA LL-Comm’l 0.15µA LL - Ind’l/Auto-A 0.110µA LL - Auto-E0.110µA t CDR [8]Chip Deselect to Data Retention Time 0ns t R [8]Operation Recovery Timet RCns3.0V 5V OUTPUTR1 1800ΩR2990Ω100pF INCLUDING JIG AND SCOPEGND90%10%90%10%<5ns<5ns5V OUTPUTR1 1800ΩR2990Ω5pFINCLUDING JIG AND SCOPE(a)(b)OUTPUT1.77VEquivalent to:THÉ VENIN EQUIVALENTALL INPUT PULSES 639ΩData Retention WaveformNote:6.No input may exceed V CC + 0.5V .3.0V 3.0V t CDRV DR >2VDATA RETENTION MODEt RCEV CCCY62256NSwitching Characteristics Over the Operating Range [7]Parameter DescriptionCY62256N-55CY62256N-70Unit Min.Max.Min.Max.Read Cycle t RC Read Cycle Time 5570ns t AA Address to Data Valid5570ns t OHA Data Hold from Address Change 55ns t ACE CE LOW to Data Valid 5570ns t DOE OE LOW to Data Valid 2535ns t LZOE OE LOW to Low-Z [8]55ns t HZOE OE HIGH to High-Z [8, 9]2025ns t LZCE CE LOW to Low-Z [8]55ns t HZCE CE HIGH to High-Z [8, 9]2025ns t PU CE LOW to Power-up 00ns t PD CE HIGH to Power-down 5570ns Write Cycle [10, 11]t WC Write Cycle Time 5570ns t SCE CE LOW to Write End 4560ns t AW Address Set-up to Write End 4560ns t HA Address Hold from Write End 00ns t SA Address Set-up to Write Start 00ns t PWE WE Pulse Width 4050ns t SD Data Set-up to Write End 2530ns t HD Data Hold from Write End 00ns t HZWE WE LOW to High-Z [8, 9]2025ns t LZWEWE HIGH to Low-Z [8]55nsSwitching WaveformsRead Cycle No. 1[12, 13]Notes:7.Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL /I OH and 100-pF load capacitance.8.At any given temperature and voltage condition, t HZCE is less than t LZCE , t HZOE is less than t LZOE , and t HZWE is less than t LZWE for any given device.9.t HZOE , t HZCE , and t HZWE are specified with C L = 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.10.The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal canterminate a Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.11.The minimum Write cycle time for Write Cycle #3 (WE controlled, OE LOW) is the sum of t HZWE and t SD .12.Device is continuously selected. OE, CE = V IL .13.WE is HIGH for Read cycle.ADDRESSDATA OUTPREVIOUS DATA VALIDDATA VALIDt RCt AAt OHACY62256NRead Cycle No. 2[13, 14]Write Cycle No. 1 (WE Controlled)[10, 15, 16]Write Cycle No. 2 (CE Controlled)[10, 15, 16]Notes:14.Address valid prior to or coincident with CE transition LOW.15.Data I/O is high impedance if OE = V IH .16.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 17.During this period, the I/Os are in output state and input signals should not be applied.Switching Waveforms (continued)50%50%DATA VALIDt RCt ACEt DOEt LZOEt LZCEt PUDATA OUTHIGH IMPEDANCEIMPEDANCEICCISBt HZOE t HZCEt PD OECEHIGH V CC SUPPLY CURRENTt HDt SDt PWEt SAt HAt AWt WCDATA I/OADDRESSCEWEOEt HZOEDATA IN VALIDNOTE 17t WCt AWt SAt HAt HDt SDt SCEWEDATA I/OADDRESSCEDATA IN VALIDCY62256NWrite Cycle No. 3 (WE Controlled, OE LOW)[11, 16]Switching Waveforms (continued)DATA I/OADDRESSt HDt SDt LZWEt SAt HAt AWt WCCEWEt HZWEDATA IN VALIDNOTE 17CY62256NTypical DC and AC Characteristics1.21.41.00.60.40.24.04.55.05.56.01.61.41.21.00.8−5525125−55251251.21.00.8N O R M A L I Z E D t A A120100806040200.01.02.03.04.0O U T P U T S O U R C E C U R R E N T (m A )SUPPLY VOLTAGE (V)NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGEAMBIENT TEMPERATURE (°C)vs. AMBIENT TEMPERATUREAMBIENT TEMPERATURE (°C)OUTPUT VOLTAGE (V)OUTPUT SOURCE CURRENT 0.00.81.41.11.00.94.04.55.05.56.0N O R M A L I Z E D t A ASUPPLY VOLTAGE (V)NORMALIZED ACCESS TIME 120140*********0.01.02.03.04.0O U T P U T S I N K C U R R E N T (m A )080OUTPUT VOLTAGE (V)OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE0.60.40.20.0N O R M A L I Z E D I C CN O R M A L I Z E D I C C , I S BI CCI CCI SB0.60.801.31.2V IN = 5.0V T A = 25°C 1.4−55251052.52.01.5AMBIENT TEMPERATURE (°C)1.00.50.0–0.5I SB3.0STANDBY CURRENTI S B 2 µANORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATUREV IN = 5.0VV CC = 5.0V V CC = 5.0V V IN = 5.0Vvs. SUPPLY VOLTAGE NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURET A = 25°CV CC = 5.0VT A = 25°CV CC = 5.0V vs. OUTPUT VOLTAGE V CC = 5.0V T A = 25°CCY62256NTypical DC and AC Characteristics (continued)3.02.52.01.51.00.50.01.02.03.04.0N O R M A L I Z E D I P OSUPPLY VOLTAGE (V)TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 30.025.020.015.010.05.00200400600800D E L T A t (n s )AA CAPACITANCE (pF)TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.251.000.7510203040N O R M A L I Z E D I C CCYCLE FREQUENCY (MHz)0.05.00.010000.50NORMALIZED I CC vs. CYCLE TIMET A = 25°C V CC = 5.0V V IN = 5.0VT A = 25°CV CC = 4.5V Truth TableCE WE OE Inputs/Outputs ModePowerH X X High-Z Deselect/Power-downStandby (I SB )L H L Data Out Read Active (I CC )L L X Data In WriteActive (I CC )LHHHigh-ZOutput DisabledActive (I CC )CY62256N Ordering InformationSpeed(ns)Ordering Code PackageDiagram Package TypeOperatingRange55CY62256NLL−55SNI51-8509228-lead (300-Mil) Narrow SOIC Industrial CY62256NLL−55SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−55ZI51-8507128-lead TSOP ICY62256NLL−55ZXI28-lead TSOP I (Pb-Free)CY62256NLL−55ZXA51-8507128-lead TSOP I (Pb-Free)Automotive-A CY62256NLL−55SNXE51-8509228-lead (300-Mil) Narrow SOIC (Pb-Free)Automotive-E CY62256NLL−55ZXE51-8507128-lead TSOP I (Pb-Free)CY62256NLL−55ZRXE51-8507428-lead Reverse TSOP I (Pb-Free)70CY62256NL−70PC51-8501728-lead (600-Mil) Molded DIP Commercial CY62256NL−70PXC28-lead (600-Mil) Molded DIP (Pb-Free)CY62256NLL−70PC28-lead (600-Mil) Molded DIPCY62256NLL−70PXC28-lead (600-Mil) Molded DIP (Pb-Free)CY62256NL−70SNC51-8509228-lead (300-Mil) Narrow SOICCY62256NL−70SNXC28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70SNC28-lead (300-Mil) Narrow SOICCY62256NLL−70SNXC28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70ZC51-8507128-lead TSOP ICY62256NLL−70ZXC28-lead TSOP I (Pb-Free)CY62256NL–70SNI51-8509228-lead (300-Mil) Narrow SOIC IndustrialCY62256NL–70SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70SNI28-lead (300-Mil) Narrow SOICCY62256NLL−70SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70ZI51-8507128-lead TSOP ICY62256NLL−70ZXI28-lead TSOP I (Pb-Free)CY62256NLL−70ZRI51-8507428-lead Reverse TSOP ICY62256NLL−70ZRXI28-lead Reverse TSOP I (Pb-Free)CY62256NLL−70SNXA51-8509228-lead (300-Mil) Narrow SOIC (Pb-Free)Automotive-A Please contact your local Cypress sales representative for availability of these partsCY62256N Package DiagramsDocument #: 001-06511 Rev. *A Page 11 of 13[+] FeedbCY62256NDocument #: 001-06511 Rev. *APage 12 of 13© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.All product and company names mentioned in this document are the trademarks of their respective holders.Package Diagrams (continued)28-lead TSOP I (8 x 13.4 mm) (51-85071)51-85071-*G51-85074-*F28-Lead RTSOP I (8 x 13.4 mm) (51-85074)[+] FeedbCY62256NDocument #: 001-06511 Rev. *A Page 13 of 13Document History PageDocument Title: CY62256N 256K (32K x 8) Static RAM Document Number: 001- 06511REV.ECN NO.Issue Date Orig. of Change Description of Change**426504See ECN NXR New Data Sheet*A488954See ECNNXRAdded Automotive productUpdated ordering Information table[+] Feedb。
启珑微电子产品手册说明书
产品手册PRODUCT MANUAL(北京︶有限公司并一直致力于为工业智能控制、医疗设备、轨道交通、智能交通以及智能家居等领域提供更优质的产品与服务。
公司具有深厚的文化底蕴，由多位有欧美留学、工作经历的归国人员创办，坚实的理论功底和丰富的芯片设计经验奠定了启珑微电子的高起点和高水准，并迅速成长为业内具有自主知识产权的中国IC设计品牌之一。
产品手册01序号产品型号封装形式产品概述兼容型号1CLM811HST-AXC TQFP-48SL811HST-AXC 2CLCP82C55AZ DIP-40CP82C55AZ 3CLIP82C55AZ DIP-40IP82C55AZ 4CLCS82C55AZ PLCC-44CS82C55AZ 5CLIS82C55AZ PLCC-44IS82C55AZ 6CLCQ82C55AZ MQFP-44CQ82C55AZ 7CLIQ82C55AZ MQFP-44IQ82C55AZ 8CLID82C55AZ DIP-40ID82C55A 9CLMD82C55A/B DIP-40MD82C55A/B 10CLMD82C55QA DIP-40MD82C55QA 11CLM65HVD230D SOIC-8SN65HVD230D 12CLM65HVD230QD SOIC-8SN65HVD230QD 13CLM65HVD231D SOIC-8SN65HVD231D 14CLM65HVD231QD SOIC-8SN65HVD231QD 15CLM65HVD232D SOIC-8SN65HVD232D 16CLM65HVD232QD SOIC-8SN65HVD232QD 17CLM65HVD233D SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233D 18CLM65HVD233HD SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233HD 19CLM65HVD233QDRQ1SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233QDRQ120CLM65HVD233MDREP SOIC-8具有待机模式和环回功能的 3.3V SN65HVD233MDREP产品手册02序号产品型号封装形式产品概述兼容型号21CLM65HVD234D SOIC-8SN65HVD234D 22CLM65HVD234QDRQ1SOIC-8SN65HVD234QDRQ123CLM65HVD235D SOIC-8SN65HVD235D 24CLM65HVD235QDRQ1SOIC-8SN65HVD235QDRQ125CLM75176BPS SOIC-8SN75176BPSR 26CLM75176BDR SOIC-8SN75176BDR 27CLM75176ADR SOIC-8SN75176ADR 28CLM75176AP DIP-8SN75176AP 29CLM76176BP DIP-8SN75176BP 30CLM75179BPS SOIC-8SN75179BPS 31CLM75179BDR SOIC-8SN75179BDR 32CLM75179AP DIP-8SN75179AP 33CLM75179BP DIP-8SN75179BP 34CLM65HVD08D SOIC-8SN65HVD08D 35CLM65HVD08P DIP-8SN65HVD08P 36CLM65HVD75D SOIC-8具有IEC ESD保护功能和20Mbps的SN65HVD75D 37CLM65HVD75DGK VSSOIC-8具有IEC ESD保护功能和20Mbps的SN65HVD75DGK 38CLM65HVD75DRBT VDFN-8具有IEC ESD保护功能和20Mbps的SN65HVD75DRBT 39CLM3085CPA+DIP-8(10Mbps)、限摆率RS-485/MAX3085CPA+40CLM3085EPA+DIP-8(10Mbps)、限摆率RS-485/MAX3085EPA+产品手册03序号产品型号封装形式产品概述兼容型号41CLM3085EEPA DIP-8(10Mbps)、限摆率RS-485/MAX3085EEPA 42CLM3085CSA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085CSA+43CLM3085ECSA+T MSOIC-8(10Mbps)、限摆率RS-485/MAX3085ECSA+T 44CLM3085ESA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085ESA+45CLM3085EESA+T SOIC-8(10Mbps)、限摆率RS-485/MAX3085EESA+46CLM3088CSA+T SOIC-8MAX3088CSA+T 47CLM3088ECSA+T SOIC-8MAX3088ECSA+T 48CLM3088ESA+T SOIC-8MAX3088ESA+T 49CLM3088EESA+T SOIC-8MAX3088EESA+T 50CLM3088CPA+DIP-8MAX3088CPA+51CLM3088ECPA+DIP-8MAX3088ECPA+52CLM3088EPA+DIP-8MAX3088EPA+53CLM3088EEPA+DIP-8MAX3088EEPA+54CLM485CPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485CPA+55CLM485ECPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485ECPA+56CLM485EPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485EPA+57CLM485EEPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX485EEPA+58CLM485CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485CSA+59CLM485ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485ESA+60CLM485EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX485EESA+产品手册04序号产品型号封装形式产品概述兼容型号61CLM3490CSA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490CSA+62CLM3490ECSA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490ESA+63CLM3490ESA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490ESA+64CLM3490EESA+SOIC-8 3.3V供电、10Mbps、限摆率、真MAX3490EESA+65CLM3491CSD SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491CSD+66CLM3491ECSD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491ECSD+67CLM3491ESD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491ESD+68CLM3491EESD+SOP-14 3.3V供电、10Mbps、限摆率、真MAX3491EESD+69CLM490CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490CSA+70CLM490ECSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490ECSA+71CLM490ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490ESA+72CLM490EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX490EESA+73CLM490CPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490CPA+74CLM490ECPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490ECPA+75CLM490EPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490EPA+76CLM490EEPA+DIP-8低功耗、限摆率、RS-485/RS-422MAX490EEPA+77CLM488CSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488CSA+78CLM488ECSA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488ECSA+79CLM488ESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488ESA+80CLM488EESA+SOIC-8低功耗、限摆率、RS-485/RS-422MAX488EESA+产品手册序号产品型号封装形式产品概述兼容型号81CLM488CPA+DIP-8MAX488CPA+82CLM488ECPA+DIP-8MAX488ECPA+83CLM488EPA+DIP-8MAX488EPA+84CLM488EEPA+DIP-8MAX488EEPA+85CLM232CSE SOIC-16MAX232CSE+T86CLM232ECSE SOIC-16MAX232ECSE+87CLM232ESE SOIC-16MAX232ESE+T88CLM232EESE SOIC-16MAX232EESE+T89CLM232CPE DIP-16MAX232CPE+90CLM232ECPE DIP-16MAX232ECPE+91CLM232EPE DIP-16MAX232EPE+92CLM232EEPE DIP-16MAX232EEPE+93CLM232CWE SOIC-16MAX232CWE+T94CLM232ECWE SOIC-16MAX232ECWE+T95CLM232EWE SOIC-16MAX232EWE+T96CLM232EEWE SOIC-16MAX232EEWE+T97CLM232ACWE SOIC-16MAX232ACWE+T98CLM232AEWE SOIC-16MAX232AEWE+99CLM3232CSE SOIC-16MAX3232CSE+T 100CLM3232ECSE SOIC-16MAX3232ECSE+T05产品手册06序号产品型号封装形式产品概述兼容型号101CLM3232ESE SOIC-16MAX3232ESE+T 102CLM3232EESE SOIC-16MAX3232EESE+T 103CLM1302S SOIC-8DS1302S+T&R 104CLM1302SN+SOIC-8DS1302SN+T&R 105CLM1302Z+T SOIC-8DS1302Z+T&R 106CLM1302ZN+SOIC-8DS1302ZN+T&R 107CLM1302+DIP-8DS1302+108CLM1302N+DIP-8DS1302N+109CLM307Z+SOIC-8DS1307Z+T&R 110CLM1307ZN+SOIC-8DS1307ZN+T&R 111CLM1307+DIP-8DS1307+112CLM1307N+DIP-8DS1307N+113CLM4717EUB+MSOP-10拟开关MAX4717EUB+114CLM231N/NOPB DIP-8LM231N/NOPB 115CLM231AN/NOPB DIP-8LM231AN/NOPB 116CLM331N/NOPB DIP-8LM331N/NOPB 117CLM331AN/NOPB DIP-8LM331AN/NOPB 118CLM298N Multiwatt-15L298N 119CLM298P POWERSO-20L298P 120CLM2543CDW SOIC-20TLC2543CDW产品手册07序号产品型号封装形式产品概述兼容型号121CLM2543IDW SOIC-20TLC2543IDW 122CLM2543CDB SSOP-20TLC2543CDB 123CLM2543IDB SSOP-20TLC2543IDB 124CLM2543CN DIP-20TLC2543CN 125CLM2543IN DIP-20TLC2543IN 126CLM1543CDW SOIC-20TLC1543CDW 127CLM1543IDW SOIC-20TLC1543IDW 128CLM1543CN DIP-20TLC1543CN 129CLM1543IN DIP-20TLC1543IN 130CLM5615CDGK VSSOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CDGK 131CLM5615IDGK VSSOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615IGGK 132CLM5615CD SOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CD 133CLM5615ID SOIC-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615ID 134CLM5615CP DIP-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615CP 135CLM5615IP DIP-8趋稳时间为12.5us并具备上电复位功能的10位、单通道、低功耗DAC TLC5615IP 136CLM3616-00SOP-14IW3616-00137CLM3616-01SOP-14IW3616-01138CLM3617-00SOP-14IW3617-00139CLM3617-01SOP-14IW3617-01140CLM3630-00SOP-14IW3630-00产品手册序号产品型号封装形式产品概述兼容型号141CLM1100-0001BGA-128ASIC从站控制ET1100-0001142CLM1100-0002BGA-128ASIC从站控制ET1100-0002143CLM1100-0003BGA-128ASIC从站控制ET1100-0003144CLM1200-0001QFN-48ASIC从站控制ET1200-0001145CLM1200-0002QFN-48ASIC从站控制ET1200-0002146CLM1200-0003QFN-48ASIC从站控制ET1200-0003147CLM8656ARZ SOIC-8AD8656ARZ148CLM8656ARMZ MSOIC-8AD8656ARMZ149CLM1040T/CM,118SOIC-8TJA1040T/CM,118 150CLM1042T/CM,118SOIC-8TJA1042T/CM,118 151CLM1050T/CM,118SOIC-8TJA1050T/CM,118 152CLM1051T/CM,118SOIC-8TJA1051T/CM,118 153CLM82C250T/YM SOIC-8PCA82C250T/YM 154CLM82C251T/YM SOIC-8PCA82C251T/YM 155CLMEE80C196KC20PLCC-68EE80C196KC20 156CLMEN80C196KC20PLCC-68EN80C196KC20 157CLMN80C196KC20PLCC-68N80C196KC20 158CLMTN80C196KC20PLCC-68TN80C196KC20 159CLMEE87C196KC20PLCC-68EE87C196KC20 160CLMEN87C196KC20PLCC-68EN87C196KC2008产品手册09序号产品型号封装形式产品概述兼容型号161CLMN87C196KC20PLCC-68N87C196KC20162CLMTN87C196KC20PLCC-68TN87C196KC20163CLM8051F020-GQ TQFP-100C8051F020-GQ 164CLM8051F021-GQ TQFP-64C8051F021-GQ 165CLM8051F330-GM VFQFN-20C8051F330-GM 166CLM8051F500-IQ TQFP-48C8051F500-IQ 167CLM8051F500-IM VFQFN-48C8051F500-IM 168CLM8051F502-IQ LQFP-32C8051F502-IQ 169CLM8051F502-IM QFN-32C8051F502-IM170CLM08D1500CIYB/NOPB HLQFP-128ADC08D1500CIYB/NOPB 171CLM083000CIYB/NOPB HLQFP-128ADCADC083000CIYB/NOPB 172CLM10AQ190AVTPY EBGA-38010位5GSPS ADC EV10AQ190AVTPY 173CLM9680BCPZ-1250LFCSP-64双通道14位1GSPS ADC AD9680BCPZ-1250174CLM9739BBCZ BGA-16014位、2.5 GSPS、RF数模AD9739BBCZ 175CLM9779ABSVZ TQFP-100双通道16位1GSPS DAC AD9779ABSVZ 176CLM12DS130AVZPY FPBGA-19612位3GSPS DAC EV12DS130AVZPY 177CLM12DS460AVZP FPBGA-19612位6.4GSPS DAC EV12DS460AVZP 178CLM9434BCPZ-370LFCSP-5612位370MSPS ADC AD9434BCPZ-370179CLM9434BCPZ-500LFCSP-5612位500MSPS ADC AD9434BCPZ-500180CLM4149IRGZTVQFN-4814位250MSPS ADCADS4149IRGZT产品手册10序号产品型号封装形式产品概述兼容型号181CLM9467BCPZ-200LFCSP-7216位200MSPS ADC AD9467BCPZ-200182CLM9467BCPZ-250LFCSP-7216位250MSPS ADC AD9467BCPZ-250183CLM9656BCPZ-125LFCSP-56四通道16位125MSPS ADC AD9656BCPZ-125184CLM9245BCPZ-40LFCSP-3214位40MSPS ADC AD9245BCPZ-40185CLM9245BCPZ-65LFCSP-3214位65MSPS ADC AD9245BCPZ-80186CLM9245BCPZ-80LFCSP-3214位80MSPS ADC AD9245BCPZ-80187CLM9783BCPZ LFCSP-72双通道16位500MSPS DAC AD9783BCPZ 188CLM7656BSTZ-REEL LQFP-64六通道16位250KSPS ADC AD7656BSTZ-REEL 189CLM7960BCPZLFCSP-3218位2MSPS ADC AD7960BCPZ190CLM128S102CIMTX/NOPB TSSOP-1612位1MSPS ADC ADC128S102CIMTX/NOPB 191CLM5638IDR SOIC-8DACTLV5638IDR 192CLM7606BSTZ LQFP-64AD7606BSTZ 193CLM9625BBPZ-2.5BGA-19612位2.6GSPS ADC AD9625BBPZ-2.5194CLM9164BBCZ BGA-16516位12GSPS DAC AD9164BBCZ 195CLM9154BCPZ LFCSP-88四通道16位2.4GSPS DAC AD9154BCPZ 196CLM2160IUK#PBF QFN-4816位25MSPS ADC LTC2160IUK#PBF 197CLM9652BBCZ-310BGA-144双通道16位310MSPS ADC AD9652BBCZ-310198CLM7779ACPZ-RL LFCSP-6424位16KSPS ADC AD7779ACPZ-RL 199CLM9208BBPZ-3000BGA-196双通道14位3GSPS ADCAD9208BBPZ-3000200CLM320VC33PGE120LQFP-144TMS320VC33PGE120产品手册序号产品型号封装形式产品概述兼容型号201CLM320VC33PGEA120LQFP-144TMS320VC33PGEA120 202CLM320VC33PGE150LQFP-144TMS320VC33PGE150203CLM320VC5402PGE100LQFP-144TMS320VC5402PGE100 204CLM320F28335PGFA LQFP-176TMS320F28335PGFA205CLM320LF2406APZA LQFP-100TMS320LF2406APZA206CLM320LF2406APZS LQFP-100TMS320LF2406APZS207CLM320LF2407APGES LQFP-144TMS320LF2407APGES208CLM320LF2407APGEA LQFP-144TMS320LF2407APGEA 209CLM320C6713BPYP200HLQFP-208TMS320C6713BPYP200 210CLM320C6713BZDP225BGA-272TMS320C6713BZDP225 211CLM320C6713BGDP225BGA-272TMS320C6713BGDP225 212CLM320C6713BZDP300BGA-272TMS320C6713BZDP300 213CLM320C6713BGDG300BGA-272TMS320C6713BGDP30011邮箱：*******************。
CY62256N中文资料
32K x 8 Y ARRA
COLUMN DECODER
POWER DOWN
I/O6 I/O7
Cypress Semiconductor Corporation Document Number: 001-06511 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709 • 408-943-2600 Revised September 13, 2013
Temperature ranges ❐ Commercial: 0 °C to +70 °C ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C High speed: 55 ns Voltage range: 4.5 V to 5.5 V operation Low active power ❐ 275 mW (max) Low standby power (LL version) ❐ 82.5 W (max) Easy memory expansion with CE and OE Features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed and power Available in Pb-free and non Pb-free 28-pin (600-mil) PDIP, 28-pin (300-mil) narrow SOIC, 28-pin TSOP I, and 28-pin reverse TSOP I packages
ZXCTN 9004(V2.08.31)分组传送产品硬件描述
2.1 子架结构 ............................................................................................................2-1 2.2 风扇插箱 ............................................................................................................2-2 2.3 子架板位资源 .....................................................................................................2-3
3.5.1 单板功能 ..................................................................................................3-4 3.5.2 单板原理 ..................................................................................................3-5 3.5.3 面板说明 ..................................................................................................3-6 3.5.4 指示灯状态 ...............................................................................................3-7 3.5.5 告警、性能、事件 ....................................................................................3-8 3.6 P90S1-2XGE-XFP ............................................................................................ 3-11 3.6.1 单板功能 ................................................................................................ 3-11 3.6.2 单板原理 ................................................................................................ 3-11 3.6.3 面板说明 ................................................................................................ 3-13 3.6.4 指示灯状态 ............................................................................................. 3-13 3.6.5 告警、性能、事件 .................................................................................. 3-13 3.7 P90S1-4XGE-XFP ............................................................................................ 3-15 3.7.1 单板功能 ................................................................................................ 3-15 3.7.2 单板原理 ................................................................................................ 3-16
PE-65856NL;中文规格书,Datasheet资料
Electrical Specifications @ 25°C - Operating Temperature 0°C to +70°C RoHS Compliant Part Number PE-65664NL PE-65779NL PE-65856NL PE-65966NL PE-65967NL PE-65968NL PE-65969NL PE-68629NL Turns Ratio (±2%) 1:2CT 1:4CT 1:1.73CT 1:1 1:1 1:2CT 1:2CT 1:1 OCL Primary (μH MIN) 35 150 50 40 40 19 19 40 OCL @ -40�C (μH MIN) 20 LL Cw/w (pF MAX) 10 15 12 10 10 10 10 5 Bandwidth 75 System (MHzTYP) .60-300 .200-340 .200-340 .250-500 .250-500 Isolation Voltage (Vrms MIN) 1500 1500 1500 1500 1500 1500 1500 3000 Package/ Schematic QC-1/B THT QC-1/B THT LC-1/C THT LC-1/E THT LS-1/E SMT LS-1/C SMT LC-1/C THT HC-1/A THT Primary Pins 2-6 2-6 4-6 4-6 4-6 4-6 4-6 1-5
USA 858 674 8100
1
Germany 49 7032 7806 0
Singapore 65 6287 8998
Shanghai 86 21 62787060
China 86 755 33966678
UT62256C中文资料
UTRON
Rev. 1.0
32K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The UT62256C is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62256C is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT62256C operates from a single 5V power supply and all inputs and outputs are fully TTL compatible
A11 A9 A8 A13
CE
I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2
PIN DESCRIPTION
SYMBOL A0 - A14 I/O1 - I/O8 CE
WE OE VCC VSS
WE
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground
6222中文资料
HCMOS OUTPUT CHARACTERISTICS
PARAMETER LOAD Voltage (High) (Low) Current (High) (Low) Duty Cycle at 50% of Vcc Rise / Fall Time 10% to 90% Start-Up Time Jitter (BW=10Hz to 20MHz) Jitter (BW=12kHz to 20MHz) MINIMUM 0.9Vcc -4 45 NOMINAL MAXIMUM 15 0.1Vcc 4 55 5 10 5 1 UNITS pF Vdc Vdc mA mA % nS h) (Vol) (Ioh) (Ioh)
50 -
PACKAGE CHARACTERISTICS
Package Hermetically sealed ceramic package and metal cover
TABLE 6.0
POWER SAVING FUNCTION: 10uA WHEN DISABLED CERAMIC SURFACE MOUNT PACKAGE TAPE AND REEL PACKAGING
TABLE 5.0 NOTE
FEATURES 2.5V OPERATION 1.8 to 50MHz TEMPERATURE RANGE: -40 to 85°C OVERALL FREQUENCY TOLERANCE:±50ppm TRI-STATE ENABLE/DISABLE FUNCTION
元器件交易网
THE CONNOR-WINFIELD CORP.
2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX (630) 851-5040. PHONE (630) 851-4722.
ZMM55C6V2中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」
5.8 6.2 6.6
6.4 6.8 7.2
7.0 7.5 7.9
7.7 8.2 8.7
8.5 9.1 9.6
9.4 10 10.6
10.4 11 11.6
11.4 12 12.7
12.4 13 14.1
13.8 15 15.8
15.3 16 17.1
16.8 18 19.1
18.8 20 21.2
5
15
70
1.0
5
20
70
1.0
5
20
90
1.0
5
26
110
1.0
5
30
110
1.0
5
40
170
1.0
5
50
170
1.0
5
55
220
1.0
5
55
220
1.0
5
80
220
1.0
5
80
220
1.0
5
80
220
1.0
5
80
220
1.0
5
80
220
1.0
2.5
90
500
1.0
2.5
90
600
1.0
2.5
110
符号
Min.
热阻Junctiobn到环境空气
RθJA
-
正向电压@I
F=200mA
VF
-
*有效规定,导致在从情况下,距离为10mm防护持在环境温度下
Typ. Max. Unit
-
0.3 * K /毫瓦
-
1.0
贴片电子元件代码（丝印）查询
贴⽚电⼦元件代码（丝印）查询THE SMDCODEBOOKSMD Codes.SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, wherethe device package carries a simple two- or three-character ID code.Identifying the manufacturers' type number of an SMD device fromthe package code can be a difficult task, involving combing throughmany different databooks.This HTML book is designed to provide an easy means of deviceidentification. It lists well over 3,400 device codes in alphabeticalorder, together with type numbers, device characteristics orequivalents and pinout information.How to use the SMD CodebookTo identify a particular SMD device, first identify the package style and note the ID code printed on the device. Now look up the code in the alphanumeric listing which forms the main part of this book by clicking on the first character shown in the left-menu.Unfortunately, each device code is not necessarily unique. For example a device coded 1A might be either a BC846A or a FMMT3904. Even the same manufacturer may use the same code for different devices!If there is more than one entry, use the package style to differentiate between devices with the same ID code. This compilation has been collected from R P Blackwell G4PMK, manufacturers' data and other sources of SMD device ID codes, pinout and leaded device equivalent information.The entries under the Manufacturer column are not intended to be comprehensive; rather they are intended to provide help on locating sources of more detailed information if you require it.ID Code VariationsMany manufacturers use an extra letter as their own identification code. If the device is from Philips it will sometimes have a lower case 'p' (or sometimes 't') added to the code; Siemens devices usually have a lower case 's'.For example, if the code is 1A, according to the table there are a number of possibilities:1A BC846A Phi ITT N BC546A1A FMMT3904 Zet N 2N39041A MMBT3904 Mot N 2N39041A IRLML2402 IR F n-ch mosfet 20V 0.9AThis has been a problem in the past, however recently manufacturers have been adding lower case letters which clarify thecode.Many recent Motorola devices have a small superscript letter after the device code, such as SA C . (This smaller letter is merely a month of manufacture code.)Many devices from Rohm Semiconductors which start with G have direct equivalents found in the rest of the number. For example GD1 is the same as D1 which is a BCW31.Some devices have a single coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type after the code letter.An 'L' suffix usually indicates a low-profile package, such as an SOT323 orSC70.SOT323.SC70.Reverse joggle devices do present a few problems. They oftern have an 'R' in the type number. A reverse package is one where the lead have been bent up instead of down. So it's a mirror image of a conventional device. Identification is usually possible from the code number, but some manufacturers use the same code. In these cases, it's a case of looking at the device with a magnifying glass. The leads of most normal packages come out closer to the circuit board side of the device; conversely a reverse joggle package will have them coming out closer to the 'top' of the device.Sometimes a series of devices, derived from the same die, have related type (not code) numbers. Often an 'R' will indicate a reverse joggle package, and/or a 'W' indicate a smaller package variant, such as SOT343. Sometimes similarities are also found in the code numbers. For example:Recently some manufacturers have used a symbol or lower case letter to indicate the country of manufacture. These have been ignored in the alphabetical ordering. For example:'67' is the code for a BFP67 (SOT143 package) ,'67R' is the code for the reverse joggle variant BFP67R (SOT143R),'W67' is the code for a SOT343 package version.SOT143.'Z-S' and 'ZtS ' are both 2PC4081Q devices made by Philips; the first made in Hong Kong and the second in Malaysia; this appears in the codebook classified under ZS.Leaded equivalent device and informationWhere possible, the listing gives the part number of a conventional wire-leaded device with equivalent characteristics. If the leaded device is well-known then no more information is given. If the device is less common, some additional information will sometimes be given. Where no exact leaded equivalent exists, a brief device description is given, which may be sufficient to allow substitution with another device.When describing device characteristics, some terms are implied from the type of device. For example, a voltage specified for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zenervoltage) will be given.Normally, where a voltage, current or power is specified, these will be limiting values. For example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation of 1W. Some of the transistors are types with integrated resistors; in the list, a base resistor means a resistor connected in series with the base. When two resistor values are given, the first is the series base resistor, and the second the resistor between base and emitter.Digital Transistors (dtr)These are transistors with built-in resistors.Some have one resistor between base and emitter, others in series with the base. Many others have both.To keep things simple, the series resistor is called R1 and the base emitter resistor is called R2. If both are present, then two values are given, R1 first. So 4k7 + 10k means that R1 (the base resistor) is 4k7 and R2 (the resistor between base and emitter) is 10k.ConclusionIdentifying the manufacturers' type number of an SMD device from the package code can be a difficult task, involving combing through many different databooks. This HTML book is designed to provide an easy means of device identification. Abbreviationsamp amplifieratten attenuatora anodeb basec cathodeca common anodecc common cathodecomp complementd draindg dual gatedtr digital transistor (see codebook introduction) enh enhancement (mode - FETs)fet field effect transistorfT transition frequencyGaAsfet Gallium Arsenide field effect transistorg gategnd groundgp general purposehfe small signal current gaini/p inputId drain currentIg gate currentIr reverse leakage current (diodes)jfet junction field effect transistorMAG maximum available gainmax maximummin minimummmic microwave minature integrated circuit modamp modular amplifier - an mmic amplifier mosfet metal oxide insulated gate fetn-ch n-channel fet (any type)npn npn bipolar transistoro/p outputp-ch p-channel fet (any type)pin pin diodepkg packagepnp pnp bipolar transistorprot protection, protected (as in mosfet gate) res resistors sourceser seriesSi siliconsubstr substratesw switch or switchingVce collector - emitter voltage (maximum) Vcc collector supply voltageManufacturer abbreviationsAgi Agilent (was HP)Fch FairchildHP Hewlett-Packard (Now Agilent)Inf Infineon (was Siemens)ITT ITT SemiconductorsMC Mini-CircuitsMot Motorola (now ON Semiconductors) Nat National SemiconductorNec NECNJRC New Japan Radio CoON ON Semiconductors (was Motorola) Phi PhilipsRoh RohmSGS SGS-ThompsonSie Siemens (now Infineon)Sil Siliconix (Vishay-Silliconix)Tem Temic SemiconductorsTfk Telefunken (Vishay-Telefunken)Tok Toko Inc.Zet ZetexCodes beginning with '0'Code Device Manufacturer Base Package Leaded Equivalent/Data0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz005 SSTPAD5 Sil J - PAD-5 5pA leakage diodep01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7t01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k701 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 010 SSTPAD10 Sil J - PAD-10 10pA leakage diode 011SO2369R SGS R SOT23R 2N236902 BST82 Phi M - n-ch mosfet 80V 175mA02 MRF5711L Mot X SOT143 npn RF MRF57102 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 02 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain p02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias rest02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res03 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 03 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA03 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA03 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA04 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 04 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 04 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 04 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 04 MRF5211L Mot X SOT143 pnp RF MRF52104 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.5 dBm -04 PMSS3904 Phi N SOT323 2N3904t04 PMBS3904 Phi N SOT23 2N390405 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 05 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 05 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 05 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 05F TSDF1205R Tfk WQ - fT12GHz npn 4V 5mA06 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 06 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 06 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 06 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA-06 PMSS3906 Phi N SOT323 2N3906t06 PMBS3906 Phi N SOT23 2N3906020 SSTPAD20 Sil J - PAD-20 20pA leakage diode 050 SSTPAD50 Sil J - PAD-50 50pA leakage diode 081 SO2369AR SGS R SOT23R 2N2369A09 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 09 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA0A MUN5111DW1 Mot DO SOT363 dual pnp dtr 10k+10k0A DTC125TUA Roh N SC70 npn dtr R2 100k 50V 100mA0A DTC125TKA Roh N SC59 npn dtr R2 100k 50V 100mA0B MUN5112DW1 Mot DO SOT363 dual pnp dtr 22k+22k0C MUN5113DW1 Mot DO SOT363 dual pnp dtr 47k+47k0D MUN5114DW1 Mot DO SOT363 dual pnp dtr 10k+47k0E MUN5115DW1 Mot DO SOT363 dual pnp dtr R1 10k0F MUN5116DW1 Mot DO SOT363 dual pnp dtr R1 4k70G MUN5130DW1 Mot DO SOT363 dual pnp dtr 1k0+1k00H MUN5131DW1 Mot DO SOT363 dual pnp dtr 2k2+2k20J MUN5132DW1 Mot DO SOT363 dual pnp dtr 4k7+4k70K MUN5133DW1 Mot DO SOT363 dual pnp dtr 4k7+47k0L MUN5134DW1 Mot DO SOT363 dual pnp dtr 22k+47k0M MUN5135DW1 Mot DO SOT363 dual pnp dtr 2k2+47kCodes beginning with '1'Code Device Manufacturer Base Package Leaded Equivalent/Data1 2SC3587 Nec CX - npn RF fT10GHz1 BA277 Phi I SOD523 VHF Tuner band switch diode1 (red) BB669 Sie I SOD323 56-2.7 pF varicap10 MRF9411L Mot X SOT143 npn Rf 8GHz MRF94110A PZM10NB2A Phi A SOT346 dual ca 10V 0.3W zener10V PZM10NB Phi C SOT346 10V 0.3W zener10Y BZV49-C10 Phi O SOT89 10V 1W zener11 MRF9511L Mot X SOT143 npn RF 8GHz MRF95111 MUN5311DW1 Mot DP SOT363 npn/pnp dtr 10k+10k11 PDTA114EU Phi N SOT416 pnp dtrp11 PDTA114TT Phi N SOT23 pnp dtrt11 PDTA114TT Phi N SOT23 pnp dtr11A PZM11NB2A Phi A SOT346 dual ca 11V 0.3W zener11A MMBD1501A Nat C SOT23 Si diode 200V 100mA11V PZM11NB Phi C SOT346 11V 0.3W zener11Y BZV49-C11 Phi O SOT89 11V 1W zener12 MUN5312DW1 Mot DP SOT363 npn/pnp dtr 22k+22k12 DTA123EUA Rho N SC70 pnp dtr 2k2+2k2 50V 100ma12 DTA123EKA Rho N SC59 pnp dtr 2k2+2k2 res 50V 100ma p12 PDTC114TT Phi N SOT23 npn dtr t12 PDTC114TT Phi N SOT23 npn dtr12A MMBD1502A Nat K SOT23 Si diode 200V 100mA12A PZM12NB2A Phi A SOT346 dual ca 12V 0.3W zener12E ZC2812E Zet D SOT23 dual series RF schottky15V 20mA 12V PZM12NB Phi C SOT346 12V 0.3W zener12Y BZV49-C12 Phi O SOT89 12V 1W zener13 DTA143EUA Rho N SC70 pnp dtr 4k7+4k7 50V 100ma13 DTA143EKA Rho N SC59 pnp dtr 4k7+4k7 50V 100ma13 DTA143ECA Rho N SOT23 pnp dtr 4k7+4k7 50V 100ma13t BC846BPN Phi N SOT363 BC546B13s BAS125 Sie C SOT23 Schottky sw 24V 100mA13s BAS125W Sie C SOT323 Schottky sw 24V 100mA13 MA4CS103A M/A C SOT23 Schottky RF 20V 100mA13 MUN5313DW1 Mot DP SOT363 npn/pnp dtr 47k+47k13A MMBD1503A Nat D SOT23 dual Si diode 200V 100mA 13A PZM13NB2A Phi A SOT346 dual ca 13V 0.3W zener13E ZC2813E Zet A SOT23 dual ca RF schottky15V 20mA 13V PZM13NB Phi C SOT346 13V 0.3W zener13Y BZV49-C13 Phi O SOT89 13V 1W zener14s BAS125-04 Sie D SOT23 Dual series Schottky 25V 100mA 14s BAS125-04W Sie D SOT323 Dual series Schottky 25V 100mA 14 BAT114-099R Sie DQ - Quad Schottky crossover ring 14 DTA114EUA Roh N SC70 pnp dtr 10k + 10k14 DTA114EKA Roh N SC59 pnp dtr 10k + 10k14 MUN5314DW1 Mot DP SOT363 npn/pnp dtr 10k R114 DTA114ECA Roh N SOT23 pnp dtr 10k + 10k14A MMBD1504A Nat B - dual cc Si diode 200V 100mA 15s BAS125-05 Sie B SOT23 dual cc Schottky 25V 100mA 15s BAS125-05W Sie B SOT323 dual cc Schottky 25V 100mA 15 DTA124EUA Roh N SC70 pnp dtr 30V 50mA 22k+22k 15 DTA124EKA Roh N SC59 pnp dtr 30V 50mA 22k+22k 15 DTA124ECA Roh N SOT23 pnp dtr 30V 50mA 22k+22k 15 MUN5315DW1 Mot DP SOT363 npn/pnp dtr 10k R115 MMBT3960 Mot N - 2N396015A MMBD1505A Nat A - dual ca Si diode 200V 100mA 15A PZM15NB2A Phi A SOT346 dual ca 15V 0.3W zener15V PZM15NB Phi C SOT346 15V 0.3W zener15Y BZV49-C15 Phi O SOT89 15V 1W zenerp16 PDTC114ET Phi N SOT23 npn dtrt16 PDTC114EU Phi N SOT323 npn dtr16s BAS125-06 Sie A SOT23 dual ca Schottky 25V 100mA 16s BAS125-06W Sie A SOT323 dual ca Schottky 25V 100mA 16 MUN5316DW1 Mot DP SOT363 npn/pnp dtr 4k7 R116 DTA144EUA Roh N SC70 pnp dtr 30V 50mA 47k+47k 16 DTA144EKA Roh N SC59 pnp dtr 30V 50mA 47k+47k 16V PZM16NB Phi C SOT346 16V 0.3W zener16Y BZV49-C16 Phi O SOT89 16V 1W zener17s BAS125-07 Sie S SOT143 dual Schottky 25V 100mA 17s BAS125-07W Sie S SOT343 dual Schottky 25V 100mAp17 PDTC124ET Phi N SOT23 npn dtrt17 PDTC124EU Phi N SOT323 npn dtr18 BFP181T Tfk X - npn Rf fT 7.8GHz 10V 20mA 18 PDTC143ZK Phi N SOT346 npn dtr 4k7+47kp18 PDTC143ZT Phi N SOT23 npn dtr 4k7+47kt18 PDTC143ZT Phi N SOT23 npn dtr 4k7+47k18V PZM18NB Phi C SOT346 18V 0.3W zener18Y BZV49-C18 Phi O SOT89 18V 1W zener19 PDTA143ZK Phi N SOT346 pnp dtr 4k7+47k19 DTA115EUA Rho N SC70 pnp dtr 100k+100k 50V 100ma 19 DTA115EKA Rho N SC59 pnp dtr 100k+100k 50V 100ma p19 PDTA143ZT Phi N SOT23 pnp dtr 4k7+47kt19 PDTA143ZT Phi N SOT23 pnp dtr 4k7+47k100 SSTPAD100 Sil J SOT23 PAD-100 100pA leakage diode 101 PZM10NB1 Phi C SOT346 10V 0.3W zener102 PZM10NB2 Phi C SOT346 10V 0.3W zener103 PZM10NB3 Phi C SOT346 10V 0.3W zener111 PZM11NB1 Phi C SOT346 11V 0.3W zener111 DTA113ZUA Roh N SC70 pnp dtr 1k+10k 50V 100mA 112 PZM11NB2 Phi C SOT346 11V 0.3W zener113 PZM11NB3 Phi C SOT346 11V 0.3W zener113 DTA143ZUA Roh N SC70 pnp dtr 4k7+47k 50V 100mA 121 PZM12NB1 Phi C SOT346 12V 0.3W zener121 DTC113ZUA Roh N SC70 npn dtr 1k+10k 50V 100mA 122 PZM12NB2 Phi C SOT346 12V 0.3W zener123 PZM12NB3 Phi C SOT346 12V 0.3W zener123 DTC143ZUA Roh N SC70 npn dtr 4k7+47k 50V 100mA 131 PZM13NB1 Phi C SOT346 13V 0.3W zener132 PZM13NB2 Phi C SOT346 13V 0.3W zener132 DTA123JUA Roh N SC70 pnp dtr 2k2+47k 50V 100mA 133 PZM13NB3 Phi C SOT346 13V 0.3W zener142 DTA123JUA Roh N SC70 npn dtr 2k2+47k 50V 100mA 151 PZM15NB1 Phi C SOT346 15V 0.3W zener152 PZM15NB2 Phi C SOT346 15V 0.3W zener153 PZM15NB3 Phi C SOT346 15V 0.3W zener156 DTA144VUA Roh N SC70 pnp dtr 47k+10k 50V 100mA 161 PZM16NB1 Phi C SOT346 16V 0.3W zener162 PZM16NB2 Phi C SOT346 16V 0.3W zener163 PZM16NB3 Phi C SOT346 16V 0.3W zener166 DTC144VUA Roh N SC70 npn dtr 47k+10k 50V 100mA 179 FMMT5179 Zet N - 2N5179181 PZM18NB1 Phi C SOT346 18V 0.3W zener182 PZM18NB2 Phi C SOT346 18V 0.3W zener183 PZM18NB3 Phi C SOT346 18V 0.3W zener1A BC846A Phi N SOT23 BC546A1A BC846AT Phi N SOT416 BC546A1Ap BC846A Phi N SOT23 BC546A1At BC846A Phi N SOT23 BC546A1At BC846AW Phi N SOT323 BC546A1A- BC846AW Phi N SOT323 BC546A1A FMMT3904 Zet N SOT23 2N39041A MMBT3904 Mot N SOT23 2N39041A IRLML2402 IR F SOT23 n-ch mosfet 20V 0.9Ap1A PMMT3904 Phi N SOT23 2N3904p1A PXT3904 Phi N SOT89 2N3904t1A PMMT3904 Phi N SOT23 2N3904t1A PMST3904 Phi N SOT323 2N3904-1A PMST3904 Phi N SOT323 2N39041AM MMBT3904L Mot N SOT23 2N39041B BC846B Phi N SOT23 BC546B1B BC846BT Phi N SOT416 BC546B1Bp BC846B Phi N SOT23 BC546B1Bt BC846B Phi N SOT23 BC546B1Bt BC846BW Phi N SOT323 BC546B1B- BC846BW Phi N SOT323 BC546B1B FMMT2222 Zet N SOT23 2N22221B MMBT2222 Mot N SOT23 2N22221B IRLML2803 IR F SOT23 n-ch mosfet 30V 0.9Ap1B PMBT2222 Phi N SOT23 2N2222t1B PMBT2222 Phi N SOT23 2N2222t1B PMST2222 Phi N SOT233 2N2222-1B PMST2222 Phi N SOT323 2N22221Bs BC817UPN Sie N SC74 -1Cp BAP50-05 Phi B SOT23 dual cc GP RF pin diode 1C FMMT-A20 Zet N SOT23 MPSA20 1C MMBTA20L Mot N SOT23 MPS39041C IRLML6302 IR F SOT23 p-ch mosfet 20V 0.6A1Cs BC847S Sie - SOT363 BC4571Dp BC846 Phi N SOT23 BC4561Dt BC846 Phi N SOT23 BC4561Dt BC846W Phi N SOT323 BC4561D- BC846W Phi N SOT323 BC4561D MMBTA42 Mot N SOT23 MPSA42 300V npn1D IRLML5103 IR F SOT23 p-ch mosfet 30V 0.6Ap1D PMBTA42 Phi N SOT23 MPSA42 300V npnp1D PXTA42 Phi N SOT89 MPSA42 300V npnt1D PMBTA42 Phi N SOT23 MPSA42 300V npnt1D PMSTA42 Phi N SOT323 MPSA42 300V npn1Ds BC846U Sie N SC74 BC4561Ds BC846U Sie - SOT363 BC4561DN 2SC4083 Roh N - npn 11V 3.2GHz TV tuners 1DR MSD1328R Mot N SOT346 npn gp 25V 500mA 1E BC847A Phi N SOT23 BC547A1E BC847AT Phi N SOT416 BC547A1Ep BC847A Phi N SOT23 BC547A1Et BC847A Phi N SOT23 BC547A1Et BC847A Phi N SOT323 BC547A1E- BC847A Phi N SOT323 BC547A1ER BC847AR Phi R SOT23R BC547A1E FMMT-A43 Zet N - MPSA431E MMBTA43 Mot N SOT23 MPSA43 200V npnt1E PMBTA43 Mot N SOT23 MPSA43 200V npnt1E PMSTA43 Mot N SOT323 MPSA43 200V npn1Es BC847A Sie N SOT23 BC4571Es BC847AW Sie N SOT323 BC4571EN 2SC4084 Roh N - npn 20V 2.0GHz TV tuners 1F BC847B Phi N SOT23 BC547B1F BC847BT Phi N SOT416 BC547B1Fs BC847B Sie N SOT23 BC547B1Fs BC847BT Sie N SC75 BC547B1Fs BC847BW Sie N SOT323 BC547B1Fp BC847B Phi N SOT23 BC547B1Ft BC847B Phi N SOT23 BC547B1Ft BC847BW Phi N SOT323 BC547B1F- BC847BW Phi N SOT323 BC547B1FR BC847BR Phi R SOT23R BC547B1F MMBT5550 Mot N SOT23 2N5550 140V npnp1F PMBT5550 Phi N SOT23 2N5550 140V npnt1F PMBT5550 Phi N SOT23 2N5550 140V npnt1F PMST5550 Phi N SOT323 2N5550 140V npn1FZ FMBT5550 Zet N SOT23 2N5550 140V npn1G BC847C Phi N SOT23 BC547C1G BC847CT Phi N SOT416 BC547C1Gt BC847CW Phi N SOT323 BC547C1G- BC847CW Phi N SOT323 BC547C1Gs BC847C Sie N SOT23 BC547C1Gs BC847CW Sie N SOT323 BC547C1GR BC847CR Phi R SOT23R BC547C1GT SOA06 SGS N SOT23 MPSA061G FMMT-A06 Zet N SOT23 MPSA061G MMBTA06 Mot N SOT23 MPSA06p1G PMMTA06 Phi N SOT23 MPSA06t1G PMMTA06 Phi N SOT23 MPSA06t1G PMMTA06 Phi N SOT323 MPSA061GM MMBTA06 Mot N SOT23 MPSA061Hp BC847 Phi N SOT23 BC5471Ht BC847 Phi N SOT23 BC5471Ht BC847W Phi N SOT323 BC5471H- BC847W Phi N SOT323 BC5471H FMMT-A05 Zet N - MPSA051H MMBTA05 Mot N SOT23 MPSA05t1H MMBTA05 Phi N SOT323 MPSA051HT SOA05 SGS N SOT23 MPSA051J BC848A Phi N SOT23 BC548A1Js BC848A Sie N SOT23 BC548A1Js BC848AW Sie N SOT323 BC548A1J FMMT2369 Zet N SOT23 2N23691J MMBT2369 Mot N SOT23 MPS23691Js BCV61A Sie VQ SOT143 npn current mirror hFe 180 1Jp BCV61A Phi VQ SOT143 npn current mirror hFe 180 p1J PMBT2369 Phi N SOT23 2N2369t1J PMBT2369 Phi N SOT23 2N2369t1J PMBT2369 Phi N SOT323 2N23691JA MMBT2369A Mot N SOT23 MPS2369A1JR BC848AR Phi R SOT23R BC548A1JZ BC848A Zet N SOT23 BC548A1K BC848B ITT N SOT23 BC548B1Kp BC848B Phi N SOT23 BC548B1Ks BC848B Sie N SOT23 BC548B1K MMBT6428 Mot N SOT23 MPSA18 50Vp1K PMBT6428 Phi N SOT23 MPSA18 50Vt1K PMBT6428 Phi N SOT23 MPSA18 50Vt1K PMBT6428 Phi N SOT323 MPSA18 50V1K FMMT4400 Zet N SOT23 2N44001Ks BCV61B Sie VQ SOT143B npn current mirror hFe 290 1Kp BCV61B Phi VQ SOT143B npn current mirror hFe 290 1KR BC848BR Phi R SOT23R BC548B1KM MMBT6428L Mot N SOT23 MPSA18 50V1KZ FMMT4400 Zet N SOT23 2N44001L BC848C ITT N SOT23 BC548C1Lp BC848C Phi N SOT23 BC548C1Ls BC848C Sie N SOT23 BC548C1Ls BC848CW Sie N SOT323 BC548C1L MMBT6429 Mot N - MPSA18 45V1L FMMT4401 Zet N - 2N44011L BCV61C Sie VQ SOT143B npn current mirror hFe 520 1Lp BCV61C Phi VQ SOT143B npn current mirror hFe 520 p1L PMBT6429 Phi N SOT23 MPSA18 45Vt1L PMBT6429 Phi N SOT23 MPSA18 45Vt1L PMBT6429 Phi N SOT323 MPSA18 45V1LR BC848CR Phi R SOT23R BC548C1Mp BC848 Phi N SOT23 BC5481M MMBTA13 Mot N SOT23 MPSA13 darlington1Mp BCV61 Phi VQ SOT143B npn current mirror1M FMMT-A13 Zet N SOT23 MPSA13p1M PXTA13 Phi N SOT89 MPSA13 darlingtonp1M PMBTA13 Phi N SOT23 MPSA13 darlingtont1M PMBTA13 Phi N SOT23 MPSA13 darlington1N FMMT-A14 Zet N SOT23 MPSA141N MMBTA14 Mot N SOT23 MPSA14 darlington1N5 ZTX11N15DF Zet N SOT23 npn 15V 3A low saturation V p1N PMBTA14 Mot N SOT23 MPSA14 darlingtonp1N PXTA14 Mot N SOT89 MPSA14 darlingtont1N PMBTA14 Mot N SOT23 MPSA14 darlington1P FMMT2222A Zet N - 2N2222A1P MMBT2222A Mot N SOT23 2N2222A1P BC847PN Sie DI - pnp/npn separate pair gp AF p1P PMBT2222A Phi N SOT23 2N2222Ap1P PXT2222A Phi N SOT89 2N2222At1P PMBT2222A Phi N SOT23 2N2222At1P PMST2222A Phi N SOT323 2N2222A1Q MMBT5088 Mot N SOT23 MPSA18 Vce 30Vp1Q PMBT5088 Phi N SOT23 MPSA18 Vce 30Vt1Q PMBT5088 Phi N SOT23 MPSA18 Vce 30Vt1Q PMST5088 Phi N SOT323 MPSA18 Vce 30V1R MMBT5089 Mot N SOT23 MPSA18 Vce 25Vt1R PMST5089 Phi N SOT323 MPSA18 Vce 25V1S MMBT2369A Nat N SOT23 2N2369A 500MHz sw npn 1S MSC3130 Mot H SOT346 npn RF fT 1.4GHz 10V1T MMBT3960A Mot N - 2N3960A1U MMBT2484L Mot N SOT23 MPSA181V MMBT6427 Mot H SOT23 2N6426/7 darlington npn 1Vp BF820 Phi N SOT23 npn 300V 50mA BF4201Vt BF820 Phi N SOT23 npn 300V 50mA BF4201Vt BF820W Phi N SOT323 npn 300V 50mA BF4201V- BF820W Phi N SOT323 npn 300V 50mA BF4201W FMMT3903 Zet N SOT23 2N39031Wp BF821 Phi N SOT23 pnp 300V 50mA BF421 1Wt BF821 Phi N SOT23 pnp 300V 50mA BF4211W t BF822W Phi N SOT323 pnp 300V 50mA BF4211W - BF822W Phi N SOT323 pnp 300V 50mA BF421 1X MMBT930L Mot N SOT23 MPS39041Xp BF822 Phi N SOT23 npn 250V 50mA BF422 1Xt BF822 Phi N SOT23 npn 250V 50mA BF422 1Y MMBT3903 Mot N SOT23 2N39031Yp BF823 Phi N SOT23 pnp 250V 50mA BF423 1Yt BF823 Phi N SOT23 pnp 250V 50mA BF423 1Z BAS70-06 Zet A SOT23 dual RF CA schottky diode 1Z MMBT6517 Mot N SOT23 2N6517 npn Vce 350VCodes beginning with '2'Code Device Manufacturer Base Package Leaded Equivalent/Data2 BAT62-02W Sie I SCD80 BAT16 schottky diode2 (blue) BAR64-03W Sie I SOD323 pin diode2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 2 (white) BB439 Sie I SOD323 29-5 pF varicap20 MRF5811 Mot X SOT143 npn Rf fT 5GHz 0.2A-20 PDTC114WU Phi N SOT323 npn dtr20F TSDF1220 Tfk X SOT143 fT 12GHz npn 6V 20mA 20V PZM20NB Phi C SOT346 20V 300mW zener 20Y BZV49-C20 Phi O SOT89 20V 1W zener21 Gali-21 MC AZ SOT89 DC-8GHz MMIC amp 14 dB gain22 MMBT4209 Nat N SOT23 pnp sw 850MHz 2N420922 DTC123EUA Rho N SC70 npn dtr 2k2+2k2 50V 100ma22 DTC123EKA Rho N SC59 npn dtr 2k2+2k2 50V 100ma22V PZM22NB Phi C SOT346 22V 300mW zener 22Y BZV49-C22 Phi O SOT89 22V 1W zener23 MMBT3646 Nat N SOT23 npn sw 350MHz 2N364623 DTC143EUA Roh N SC70 pnp dtr 50V 100mA 4k7+ 4k723 DTC143EKA Roh N SC59 pnp dtr 50V 100mA 4k7+ 4k7-23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k24 MMBD2101 Nat C SOT23 Si diode 100V 200mA24 DTC114ECA Roh N SOT23 npn dtr 50V 100mA 10k + 10k24 DTC114EUA Roh N SC70 npn dtr 50V 100mA 10k + 10k24 DTC114EKA Roh N SC59 npn dtr 50V 100mA 10k + 10k24 2SC5006 Nec N - npn RF fT 4.5GHz @3V 7mA-24 PDTC114TU Phi N SOT323 npn dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k 24V PZM24NB Phi C SOT346 24V 300mW Zener 24Y BZV49-C24 Phi O SOT89 24V 1W zener25 MMBD2102 Nat K SOT23 Si diode 100V 200mA25 DTC124ECA Roh N SOT23 npn dtr 50V 100mA 22k + 22k25 DTC124EKA Roh N SC59 npn dtr 50V 100mA 22k + 22k25 DTC124EUA Roh N SC70 npn dtr 50V 100mA 22k + 22k26 MMBD2103 Nat D SOT23 dual MMBD120126 DTC144EKA Roh N SC59 npn dtr 50V 30mA 47k + 47k26 DTC144EUA Roh N SC70 npn dtr 50V 30mA 47k + 47k27 MMBD2104 Nat B SOT23 dual cc MMBD120127V PZM27NB Phi C SOT346 27V 300mW Zener 27Y BZV49-C27 Phi O SOT89 27V 1W zener28 BFP280T Tfk W - npn RF fT 7GHz 8V 10mA28 MMBD2105 Nat A SOT23 dual ca MMBD1201-28 PDTA114WU Phi N SOT323 pnp dtr29 MMBD1401 Nat C SOT23 Si diode 200V 100mA29 DTC115EE Roh N EMT3 npn dtr 100k +100k 50V 20mA29 DTC115EUA Roh N SC70 npn dtr 100k +100k 50V 20mA29 DTC115EKA Roh N SC59 npn dtr 100k +100k 50V 20mA200 SSTPAD200 Sil J - PAD-200 200pA leakage diode 201 PZM20NB1 Phi C SOT346 20V 300mW Zener202 PZM20NB2 Phi C SOT346 20V 300mW Zener 203 PZM20NB3 Phi C SOT346 20V 300mW Zener 221 PZM22NB1 Phi C SOT346 22V 300mW Zener 222 PZM22NB2 Phi C SOT346 22V 300mW Zener 223 PZM22NB3 Phi C SOT346 22V 300mW Zener 241 PZM24NB Phi C SOT346 24V 300mW Zener 242 PZM24NB Phi C SOT346 24V 300mW Zener 243 PZM20NB Phi C SOT346 24V 300mW Zener 271 PZM2.7NB1 Phi C SOT346 2.7V 300mW Zener 272 PZM2.7NB2 Phi C SOT346 2.7V 300mW Zener 2A MMBT3906L Mot N SOT23 2N39062A MMBT3906W Mot N SOT323 2N39062A FMMT3906 Zet N SOT23 2N3906t2A PMBT3906 Phi N SOT23 2N3906t2A PMST3906 Phi N SOT323 2N3906p2A PMBT3906 Phi N SOT23 2N3906p2A PXT3906 Phi O SOT89 2N39062A4 PZM2.4NB2A Phi A SOT346 dual 2.4V cc Zener2A7 PZM2.7NB2A Phi A SOT346 dual 2.7V cc Zener2B BC849B ITT N SOT23 BC549B2Bs BC849B Sie N SOT23 BC549B2Bs BC849BW Sie N SOT323 BC549B2Bp BC849B Phi N SOT23 BC549B2Bt BC849BW Phi N SOT323 BC549B2B- BC849BW Phi N SOT323 BC549B2B FMMT2907 Zet N SOT23 2N29072B MMBT2907 Mot N SOT23 MPS2907p2B PMBT2907 Phi N SOT23 2N2907t2B PMBT2907 Phi N SOT23 2N29072BR BC849BR Phi R SOT23R BC549B2BZ FMMT2907 Zet N SOT23 2N29072C BC849C ITT N SOT23 BC549C2Cs BC849C Sie N SOT23 BC549C2Cs BC849CW Sie N SOT323 BC549C2Cp BC849C Phi N SOT23 BC549C2Ct BC849C Phi N SOT23 BC549C2Ct BC849CW Phi N SOT323 BC549C2C- BC849CW Phi N SOT323 BC549C2C MMBTA70 Mot N SOT23 MPSA702CR BC849CR Phi R SOT23R BC549C2CZ FMMTA70 Zet N SOT23 MPSA702D MMBTA92 Mot N SOT23 MPSA92 pnp Vce 300V p2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V p2D PXTA92 Phi O SOT89 MPSA92 pnp Vce 300V t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V 2E MMBTA93 Mot N SOT23 MPSA93 pnp Vce 200V 2E FMMT-A93 Zet N SOT23 MPSA93t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V 2F BC850B ITT N SOT23 BC550B2Fs BC850B Sie N SOT23 BC550B2Fs BC850BW Sie N SOT323 BC550B2Fp BC850B Phi N SOT23 BC550B2Ft BC850B Phi N SOT23 BC550B2Ft BC850BW Phi N SOT323 BC550B2F- BC850BW Phi N SOT323 BC550B2F FMMT2907A Zet N SOT23 2N2907A2F MMBT2907A Mot N SOT23 MPS2907A2F MMBT2907AW Mot N SOT323 MPS2907A p2F PMBT2907A Phi N SOT23 2N2907Ap2F PXT2907A Phi O SOT89 2N2907At2F PMBT2907A Phi N SOT23 2N2907At2F PMBT2907A Phi N SOT323 2N2907A2FR BC850BR Phi R SOT23R BC550B2G BC850C ITT N SOT23 BC550C2Gs BC850C Sie N SOT23 BC550C2Gp BC850C Phi N SOT23 BC550C2Gt BC850C Phi N SOT323 BC550C2Gt BC850CW Phi N SOT323 BC550C2G- BC850CW Phi N SOT323 BC550C2G FMMT-A56 Zet N SOT23 MPSA562G MMBTA56 Mot N SOT23 MPSA56p2G PMBTA56 Phi N SOT23 MPSA56t2G PMBTA56 Phi N SOT23 MPSA56t2G PMSTA56 Phi N SOT323 MPSA562GM MMBTA56 Mot N SOT23 MPSA562GR BC850CR Phi R SOT23R BC550C2GT SOA56 SGS N SOT23 MPSA562H FMMT-A55 Zet N SOT23 MPSA552HT SOA55 SGS N SOT23 MPSA552H MMBTA55 Mot N SOT23 MPSA55t2H PMBTA55 Phi N SOT23 MPSA55t2H PMSTA55 Phi N SOT323 MPSA552J MMBT3640 Mot N SOT23 MPS3640 pnp sw 2K FMMT4402 Zet N SOT23 2N44022K MMBT8598 Mot N - 2N4125 pnp 60V2L MMBT5401 Mot N SOT23 2N5401 pnp 150V 2L FMMT4403 Zet N SOT23 2N4403。
BR62256F-70LL资料
The BR62256F-70LL is a 32768 word ×8 bit asynchronous high-speed CMOS static RAM. It runs on a 5V single power supply, and in addition to its low power consumption and high-speed, its low standby current enables its use in battery backup applications.•ApplicationsGeneral-purpose•Features1)SRAM with a 32768 word ×8 bit configuration.2)High speed read access time of 70ns maximum (Ta= 0 to 70°C).3)Battery backup is possible.Standby current: 50µA max. (Ta = 0 to 70°C)Data holding current: 3µA max. (Ta = 0 to 70°C)4)5V single power supply voltage with ±10% fluctua-tion tolerance.5)Input/ output TTL compatible.6)Common input / output pin with three output status-es.7)No clock is necessary (asynchronous static circuit).8)Input and output data are in the same phase.9)Low power consumption.Block diagram•Absolute maximum ratings (Ta = 25°C)∗1 At pulse width of 50ns: – 3.0V (min.)ParameterSymbol Limits Unit Applied voltage V CC – 0.5∗1 ~ + 7.0V Power dissipation Pd 850∗2mW Storage temperature Tstg 0 ~ + 70°C Operating temperature Topr – 55 ~ + 125°C I / O voltage VI / O – 0.5 ~ V CC + 0.5V Input voltageV IN– 0.5 ~ V CC + 0.5V∗2 Reduced by 8.5mW for each increase in Ta of 1°C over 25°C.•Recommended operating conditionsParameterSymbol Min.Typ.Max.Unit Power supply voltage V CC 4.5 5.0 5.5V Input high level voltage V IH 2.2—V CC + 0.5V V IL – 0.3 —0.8V Ambient temperatureTa70°CInput low level voltage —•Pin assignmentsCC A14A12A7A6A5A4A3A2A1A0I / 00I / 01I / 02V SSFig.1•Pin descriptionsI / O V CC V SS A0 ~ A14I / 00 ~ I / 07CS OE WE——I I / O I I I5V ± 10% power supplyReference voltage for all input / output, 0V 32k memory address input 8-bit data I / OChip segment control input Output enable control input Write enable control inputFunctionPin name•Electrical characteristics (unless otherwise noted, Ta = 0 to + 70°C, VCC= 5V ±10%)ParameterMin.Typ.Unit Mesurement Circuit– 0.3 —0.8V —2.2—V —————0.4V 2.4—V —V Fig.3Input leakage current – 1 —+ 1 µA Output leakage current – 1 —+ 1 µA Average operating current——45mA CS = V IL ,I / O: OPEN, Min.cycle time ——10mA V IL Ϲ 0.2V, V IH м V CC – 0.2V Standby current——3mA ———50µAV IL V IH V OL V OH V OH1I LI I LO I CCA1I CCA2I SB I SB1—CS = V IHVI / O = 0 ~ V CCV IN = 0 ~ V CCI OH = – 0.1mA I OH = – 1.0mA I OL = 2.1mA Input low level voltage Input high level voltage Output low level voltage Output high level voltage Symbol Max.ConditionsV CC × 0.8—Fig.2Fig.3Fig.4Fig.5Fig.6Fig.6Fig.7CS м V CC – 0.2VV CC + 0.5CS = V IH or CE = V IH or WE = V IL CS Ϲ 0.2V, f = 1MHz, I / O: OPEN•Measurement circuitsData sets all output to LOW (Data 00)Fig.2Data sets all output to HIGH (Data FF)Fig.3V IN = 0 ~ VFig.4V I / 0 = 0 ~ V CCFig.5CS = V IH or WE = V IL or OE = V IHSw q : Average operating current I CCA1Sw w : Average operating current I CCA2IH or V IL IH or V ILFig.6OPEN CC or V SSFig.7ParameterSymbol Min.Typ.Max.Unit Input / output capacity ——10pF Input capacity——10pFV I / O = 0V V IN = 0VC I / O C INConditionsNote: These parameters are not measurements for all conditions, but are sample values.•Operating modesControl pinModePower consumption OE CS WE X H X Wait state High impedance H L H Output disable High impedance L L H Read Data output XLLWriteData inputStandby state Operating state Operating state Operating stateI / OX: Either V IL or V IH•Input / output capacity (Ta = 25°C, f = 1MHz)•Part specificationPart number Acces time (ns)BR62256F-70LL70 max.•AC test conditions (Ta = 0 to + 70°C, V CC= 5V ±10%)Input pulse level: 0.8 to 2.4VInput rise / fall time: 5ns I / O timing level: 1.5VOutput load: 1 TTL gate and CL = 100pF•Read cycleParameterSymbol Min.Max.Unit Read cycle time 70—ns Address access time—70ns Chip enable access time (CS)—70ns Output enable access time —35ns Output hold time 10—ns 10—ns 5—ns —30ns Chip disable output floating—30nst RC t AA t ACS t OE t OH t LZ t OLZ t CHZ t OHZOutput enable and output set time CS output set timeChip deselect output floatingD OUTFig.8•Read cycle timing chart 1 (CS = OE = V IL, CE2 = WE = V IH)D OUTOECSAddressFig.9•IH)ParameterSymbol Min.Max.Unit Write cycle time 70—ns Chip select time 60—ns Address valid time 60—ns Address setup time 0—ns Write pulse width 55—ns 0—ns 0—ns —30ns Input data set time 30—ns Input data hold time 0—ns 10—nst WC t CW t AW t AS t WP t WR t WR1t WHZ t DW t DH t OWCS output delay time WE output delay time WE output floating time WE output set time•Write cycle•Write cycle timing chart 1 (WE control)Fig.10∗While the I / O pin is in the output state, input signals should not be appliedthat are in reverse phase to the output.∗The contents noted in this document may fall under the jurisdiction of ser-vices pertaining to overseas exchange rates and overseas control regula-tions (services pertaining to design, construction, specifications), and may require special handling.AddressD IN D OUTWEFig.11•Write cycle timing chart 2 (CS control)Parameter Symbol Min.Typ.Max.Unit Conditions∗1 3µA (max.) when Ta = 0 to 40°C ICCDR∗1•Data retention characteristics at low power supply voltage (Ta = 0 to + 70°C)•Data retention waveform at low power supply voltageV CC CSData Retention Fig.12External dimensions (Units: mm)。
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256K (32K x 8) Static RAMCY62256NFeatures•Temperature Ranges —Commercial: 0°C to 70°C —Industrial: –40°C to 85°C —Automotive-A: –40°C to 85°C —Automotive-E: –40°C to 125°C •High speed: 55 ns•Voltage range: 4.5V–5.5V operation •Low active power —275 mW (max.)•Low standby power (LL version)—82.5 µW (max.)•Easy memory expansion with CE and OE features •TTL-compatible inputs and outputs •Automatic power-down when deselected •CMOS for optimum speed/power•Available in pb-free and non Pb-free 28-lead (600-mil) PDIP , 28-lead (300-mil) narrow SOIC, 28-lead TSOP-I and 28-lead Reverse TSOP-I packagesFunctional Description [1]The CY62256N is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected.An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O 0 through I/O 7) is written into the memory location addressed by the address present on the address pins (A 0through A 14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW,while WE remains inactive or HIGH. Under these conditions,the contents of the location addressed by the information on address pins are present on the eight data input/output pins.The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.Note:1.For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on .A 9A 8A 7A 6A 5A 4A 3A 2COLUMN DECODERR O W D E C O D E RS E N S E A M P SINPUTBUFFERPOWER DOWNWE OEI/O 0CE I/O 1I/O 2I/O 332K x 8ARRAY I/O 7I/O 6I/O 5I/O 4A 10A 13A 11A 12A A 14A 1Logic Block DiagramCY62256NPin ConfigurationsProduct PortfolioProductV CC Range (V)Speed (ns)Power DissipationOperating, I CC(mA)Standby, I SB2(µA)Min.Typ.[2]Max.Typ.[2]Max.Typ.[2]Max.CY62256NL Com’l / Ind’l 4.55.05.5702550250CY62256NLL Commercial 7025500.15CY62256NLL Industrial 55/7025500.110CY62256NLL Automotive-A 55/7025500.110CY62256NLLAutomotive-E5525500.11512345678910111415162019181721242322Top ViewNarrow SOIC 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 322232425262728125101115141312161918173420217689OEA 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)Reverse Pinout22232425262728125101115141312161918173420217689OE A 1A 2A 3A 4WE V CC A 5A 6A 7A 8A 9A 0CE I/O 7I/O 6I/O 5GND I/O 2I/O 1I/O 4I/O 0A 14A 10A 11A 13A 12I/O 3TSOP I Top View (not to scale)12345678910111415162019181721242322Top ViewDIP 121325282726GNDA 6A 7A 8A 9A 10A 11A 12A 13WE V CC A 4A 3A 2A 1I/O 7I/O 6I/O 5I/O 4A 14A 5I/O 0I/O 1I/O 2CE OE A 0I/O 3Pin DefinitionsPin Number Type Description1–10, 21, 23–26Input A 0–A 14. Address Inputs11–13, 15–19, Input/Output I/O 0–I/O 7. Data lines. Used as input or output lines depending on operation27Input/Control WE . When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted20Input/Control CE . When LOW, selects the chip. When HIGH, deselects the chip22Input/ControlOE . Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins14GroundGND . Ground for the device28Power Supply V CC . Power supply for the deviceNote:2.Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions (T A = 25°C, V CC ). Parameters are guaranteed by design and characterization, and not 100% tested.CY62256NMaximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Storage Temperature .................................–65°C to +150°C Ambient Temperature withPower Applied..............................................-55°C to +125°C Supply Voltage to Ground Potential(Pin 28 to Pin 14)...........................................–0.5V to +7.0V DC Voltage Applied to Outputsin High-Z State[3]....................................–0.5V to V CC + 0.5V DC Input Voltage[3].................................–0.5V to V CC + 0.5V Output Current into Outputs (LOW).............................20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015)Latch-up Current.................................................... > 200 mA Operating RangeRange Ambient Temperature (T A)[7]V CC Commercial0°C to +70°C 5V± 10% Industrial–40°C to +85°C 5V± 10% Automotive-A–40°C to +85°C 5V± 10% Automotive-E–40°C to +125°C 5V± 10%Electrical Characteristics Over the Operating RangeParameter Description Test Conditions-55-70Unit Min.Typ.[2]Max.Min.Typ.[2]Max.V OH Output HIGH Voltage V CC = Min., I OH = −1.0 mA 2.4 2.4V V OL Output LOW Voltage V CC = Min., I OL = 2.1 mA0.40.4VV IH Input HIGH Voltage 2.2V CC+0.5V 2.2V CC+0.5VVV IL Input LOW Voltage–0.50.8–0.50.8V I IX Input Leakage Current GND < V I < V CC–0.5+0.5–0.5+0.5µA I OZ Output Leakage Current GND < V O < V CC, Output Disabled–0.5+0.5–0.5+0.5µAI CC V CC Operating SupplyCurrent V CC = Max.,I OUT = 0 mA,f = f MAX = 1/t RCL-Comm’l/Ind’l2550mALL-Comm’l2550mALL - Ind’l25502550mALL - Auto-A25502550mALL - Auto-E2550mAI SB1Automatic CEPower-down Current—TTL Inputs Max. V CC, CE > V IH,V IN > V IH or V IN < V IL,f = f MAXL0.40.6mALL-Comm’l0.30.5mALL - Ind’l0.30.50.30.5mALL - Auto-A0.30.50.30.5mALL - Auto-E0.30.5mAI SB2Automatic CEPower-down Current—CMOS Inputs Max. V CC,CE > V CC− 0.3VV IN > V CC− 0.3V, orV IN < 0.3V, f = 0L250µALL-Comm’l0.15µALL - Ind’l0.1100.110µALL - Auto-A0.1100.110µALL - Auto-E0.115µACapacitance[8]Parameter Description Test Conditions Max.UnitC IN Input Capacitance T A = 25°C, f = 1 MHz,V CC = 5.0V 6pFC OUT Output Capacitance8pF Notes:3.V IL (min.)= −2.0V for pulse durations of less than 20 ns.4.T A is the “Instant-On” case temperature.5.Tested initially and after any design or process changes that may affect these parameters.CY62256NThermal Resistance [5]ParameterDescriptionTest ConditionsDIP SOIC TSOP RTSOP Unit ΘJA Thermal Resistance (Junction to Ambient)Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board75.6176.5693.8993.89°C/W ΘJCThermal Resistance (Junction to Case)43.1236.0724.6424.64°C/WAC Test Loads and WaveformsData Retention CharacteristicsParameter DescriptionConditions [6]Min.Typ.[2]Max.Unit V DR V CC for Data Retention 2.0V I CCDRData Retention CurrentLV CC = 2.0V, CE > V CC − 0.3V,V IN > V CC − 0.3V, or V IN < 0.3V250µA LL-Comm’l 0.15µA LL - Ind’l/Auto-A 0.110µA LL - Auto-E0.110µA t CDR [8]Chip Deselect to Data Retention Time 0ns t R [8]Operation Recovery Timet RCns3.0V 5V OUTPUTR1 1800ΩR2990Ω100pF INCLUDING JIG AND SCOPEGND90%10%90%10%<5ns<5ns5V OUTPUTR1 1800ΩR2990Ω5pFINCLUDING JIG AND SCOPE(a)(b)OUTPUT1.77VEquivalent to:THÉ VENIN EQUIVALENTALL INPUT PULSES 639ΩData Retention WaveformNote:6.No input may exceed V CC + 0.5V .3.0V 3.0V t CDRV DR >2VDATA RETENTION MODEt RCEV CCCY62256NSwitching Characteristics Over the Operating Range [7]Parameter DescriptionCY62256N-55CY62256N-70Unit Min.Max.Min.Max.Read Cycle t RC Read Cycle Time 5570ns t AA Address to Data Valid5570ns t OHA Data Hold from Address Change 55ns t ACE CE LOW to Data Valid 5570ns t DOE OE LOW to Data Valid 2535ns t LZOE OE LOW to Low-Z [8]55ns t HZOE OE HIGH to High-Z [8, 9]2025ns t LZCE CE LOW to Low-Z [8]55ns t HZCE CE HIGH to High-Z [8, 9]2025ns t PU CE LOW to Power-up 00ns t PD CE HIGH to Power-down 5570ns Write Cycle [10, 11]t WC Write Cycle Time 5570ns t SCE CE LOW to Write End 4560ns t AW Address Set-up to Write End 4560ns t HA Address Hold from Write End 00ns t SA Address Set-up to Write Start 00ns t PWE WE Pulse Width 4050ns t SD Data Set-up to Write End 2530ns t HD Data Hold from Write End 00ns t HZWE WE LOW to High-Z [8, 9]2025ns t LZWEWE HIGH to Low-Z [8]55nsSwitching WaveformsRead Cycle No. 1[12, 13]Notes:7.Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL /I OH and 100-pF load capacitance.8.At any given temperature and voltage condition, t HZCE is less than t LZCE , t HZOE is less than t LZOE , and t HZWE is less than t LZWE for any given device.9.t HZOE , t HZCE , and t HZWE are specified with C L = 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.10.The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal canterminate a Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.11.The minimum Write cycle time for Write Cycle #3 (WE controlled, OE LOW) is the sum of t HZWE and t SD .12.Device is continuously selected. OE, CE = V IL .13.WE is HIGH for Read cycle.ADDRESSDATA OUTPREVIOUS DATA VALIDDATA VALIDt RCt AAt OHACY62256NRead Cycle No. 2[13, 14]Write Cycle No. 1 (WE Controlled)[10, 15, 16]Write Cycle No. 2 (CE Controlled)[10, 15, 16]Notes:14.Address valid prior to or coincident with CE transition LOW.15.Data I/O is high impedance if OE = V IH .16.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 17.During this period, the I/Os are in output state and input signals should not be applied.Switching Waveforms (continued)50%50%DATA VALIDt RCt ACEt DOEt LZOEt LZCEt PUDATA OUTHIGH IMPEDANCEIMPEDANCEICCISBt HZOE t HZCEt PD OECEHIGH V CC SUPPLY CURRENTt HDt SDt PWEt SAt HAt AWt WCDATA I/OADDRESSCEWEOEt HZOEDATA IN VALIDNOTE 17t WCt AWt SAt HAt HDt SDt SCEWEDATA I/OADDRESSCEDATA IN VALIDCY62256NWrite Cycle No. 3 (WE Controlled, OE LOW)[11, 16]Switching Waveforms (continued)DATA I/OADDRESSt HDt SDt LZWEt SAt HAt AWt WCCEWEt HZWEDATA IN VALIDNOTE 17CY62256NTypical DC and AC Characteristics1.21.41.00.60.40.24.04.55.05.56.01.61.41.21.00.8−5525125−55251251.21.00.8N O R M A L I Z E D t A A120100806040200.01.02.03.04.0O U T P U T S O U R C E C U R R E N T (m A )SUPPLY VOLTAGE (V)NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGEAMBIENT TEMPERATURE (°C)vs. AMBIENT TEMPERATUREAMBIENT TEMPERATURE (°C)OUTPUT VOLTAGE (V)OUTPUT SOURCE CURRENT 0.00.81.41.11.00.94.04.55.05.56.0N O R M A L I Z E D t A ASUPPLY VOLTAGE (V)NORMALIZED ACCESS TIME 120140*********0.01.02.03.04.0O U T P U T S I N K C U R R E N T (m A )080OUTPUT VOLTAGE (V)OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE0.60.40.20.0N O R M A L I Z E D I C CN O R M A L I Z E D I C C , I S BI CCI CCI SB0.60.801.31.2V IN = 5.0V T A = 25°C 1.4−55251052.52.01.5AMBIENT TEMPERATURE (°C)1.00.50.0–0.5I SB3.0STANDBY CURRENTI S B 2 µANORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATUREV IN = 5.0VV CC = 5.0V V CC = 5.0V V IN = 5.0Vvs. SUPPLY VOLTAGE NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURET A = 25°CV CC = 5.0VT A = 25°CV CC = 5.0V vs. OUTPUT VOLTAGE V CC = 5.0V T A = 25°CCY62256NTypical DC and AC Characteristics (continued)3.02.52.01.51.00.50.01.02.03.04.0N O R M A L I Z E D I P OSUPPLY VOLTAGE (V)TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 30.025.020.015.010.05.00200400600800D E L T A t (n s )AA CAPACITANCE (pF)TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.251.000.7510203040N O R M A L I Z E D I C CCYCLE FREQUENCY (MHz)0.05.00.010000.50NORMALIZED I CC vs. CYCLE TIMET A = 25°C V CC = 5.0V V IN = 5.0VT A = 25°CV CC = 4.5V Truth TableCE WE OE Inputs/Outputs ModePowerH X X High-Z Deselect/Power-downStandby (I SB )L H L Data Out Read Active (I CC )L L X Data In WriteActive (I CC )LHHHigh-ZOutput DisabledActive (I CC )CY62256N Ordering InformationSpeed(ns)Ordering Code PackageDiagram Package TypeOperatingRange55CY62256NLL−55SNI51-8509228-lead (300-Mil) Narrow SOIC Industrial CY62256NLL−55SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−55ZI51-8507128-lead TSOP ICY62256NLL−55ZXI28-lead TSOP I (Pb-Free)CY62256NLL−55ZXA51-8507128-lead TSOP I (Pb-Free)Automotive-A CY62256NLL−55SNXE51-8509228-lead (300-Mil) Narrow SOIC (Pb-Free)Automotive-E CY62256NLL−55ZXE51-8507128-lead TSOP I (Pb-Free)CY62256NLL−55ZRXE51-8507428-lead Reverse TSOP I (Pb-Free)70CY62256NL−70PC51-8501728-lead (600-Mil) Molded DIP Commercial CY62256NL−70PXC28-lead (600-Mil) Molded DIP (Pb-Free)CY62256NLL−70PC28-lead (600-Mil) Molded DIPCY62256NLL−70PXC28-lead (600-Mil) Molded DIP (Pb-Free)CY62256NL−70SNC51-8509228-lead (300-Mil) Narrow SOICCY62256NL−70SNXC28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70SNC28-lead (300-Mil) Narrow SOICCY62256NLL−70SNXC28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70ZC51-8507128-lead TSOP ICY62256NLL−70ZXC28-lead TSOP I (Pb-Free)CY62256NL–70SNI51-8509228-lead (300-Mil) Narrow SOIC IndustrialCY62256NL–70SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70SNI28-lead (300-Mil) Narrow SOICCY62256NLL−70SNXI28-lead (300-Mil) Narrow SOIC (Pb-Free)CY62256NLL−70ZI51-8507128-lead TSOP ICY62256NLL−70ZXI28-lead TSOP I (Pb-Free)CY62256NLL−70ZRI51-8507428-lead Reverse TSOP ICY62256NLL−70ZRXI28-lead Reverse TSOP I (Pb-Free)CY62256NLL−70SNXA51-8509228-lead (300-Mil) Narrow SOIC (Pb-Free)Automotive-A Please contact your local Cypress sales representative for availability of these partsCY62256N Package DiagramsDocument #: 001-06511 Rev. *A Page 11 of 13[+] FeedbCY62256NDocument #: 001-06511 Rev. *APage 12 of 13© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.All product and company names mentioned in this document are the trademarks of their respective holders.Package Diagrams (continued)28-lead TSOP I (8 x 13.4 mm) (51-85071)51-85071-*G51-85074-*F28-Lead RTSOP I (8 x 13.4 mm) (51-85074)[+] FeedbCY62256NDocument #: 001-06511 Rev. *A Page 13 of 13Document History PageDocument Title: CY62256N 256K (32K x 8) Static RAM Document Number: 001- 06511REV.ECN NO.Issue Date Orig. of Change Description of Change**426504See ECN NXR New Data Sheet*A488954See ECNNXRAdded Automotive productUpdated ordering Information table[+] Feedb。