Vishay Siliconix S18-1175-Rev. A 30V P-Channel MOS

SISH101DN-T1-GE3

SiSH101DN

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

•TrenchFET ® power MOSFET •100 % R g and UIS tested

•Material categorization:

For definitions of compliance please see /doc?99912

APPLICATIONS

•Notebook adapter switch •Notebook battery management •Load switch

Notes

a.Surface mounted on 1" x 1" FR4 board

b.t = 10 s

c.Maximum under steady state conditions is 81 °C/W

d.Package limited

e.See solder profile (/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection

f.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

PRODUCT SUMMARY

V DS (V)

-30R DS(on) max. (Ω) at V GS = -10 V 0.0072R DS(on) max. (Ω) at V GS = -4.5 V 0.0130Q g typ. (nC)32I D (A)

-35 d Configuration

Single

PowerPAK ® 1212-8S H

Bottom View

D 8D

7D 6D 5

1S 2S 3S 4G

Top View

13

.3 m

m 3.3

m m

0.9 mm

ORDERING INFORMATION

Package

PowerPAK 1212-8Lead (Pb)-free and halogen-free

SiSH101DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)

PARAMETER S YMBOL LIMIT UNIT

Drain-source voltage V DS -30V

Gate-source voltage

V GS ± 25Continuous drain current (T J = 150 °C)T C = 25 °C I D -35 d A

T C = 70 °C -35 d T A = 25 °C -16.9 a, b T A = 70 °C -13.6 a, b

Pulsed drain current (t = 300 μs)I DM -80Continuous source-drain diode current T C = 25 °C I S -35 d T A = 25 °C -3a, b Avalanche current

L = 0.1 mH I AS -20Single-pulse avalanche energy

E AS 20mJ

Maximum power dissipation T C = 25 °C P D 52W

T C = 70 °C 33T A = 25 °C 3.7 a, b T A = 70 °C

2.4 a, b Operating junction and storage temperature range T J , T stg

-55 to +150

°C

Soldering recommendations (peak temperature) e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER S YMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient a, c

t ≤ 10 s R thJA 2633°C/W

Maximum junction-to-case Steady state R thJC 1.9 2.4

SiSH101DN

Vishay Siliconix

Notes

a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b.Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

PARAMETER S YMBOL TE S T CONDITION S MIN. TYP.MAX.UNIT

Static

Drain-source breakdown voltage V DS V GS = 0 V, I D = -250 μA

-30--V V DS temperature coefficient ∆V DS /T J I D = -250 μA --22-mV/°C V GS(th) temperature coefficient ∆V GS(th)/T J - 5.1-Gate-source threshold voltage V GS(th)V DS = V GS , I D = -250 μA -1.2--2.5V Gate-source leakage

I GSS V DS = 0 V, V GS = ± 25 V --± 100nA Zero gate voltage drain current I DSS V DS = -30 V, V GS = 0 V ---1μA V DS = -30 V, V GS = 0 V, T J = 55 °C

---5On-state drain current a

I D(on)V DS ≥ -10 V, V GS = -10 V -30--A Drain-source on-state resistance a R DS(on)V GS = -10 V, I D = -15 A -0.00580.0072ΩV GS = -4.5 V, I D = -10 A -0.01000.0130Forward transconductance a g fs

V DS = -0 V, I D = -15 A

-44

-S

Dynamic b

Input capacitance C iss V DS = -15 V, V GS = 0 V, f = 1 MHz

-3595-pF

Output capacitance

C oss -442-Reverse transfer capacitance C rss -408-Total gate charge Q g V DS = -15 V, V GS = -10 V, I

D = -10 A -68102nC V DS = -15 V, V GS = -4.5 V, I D = -10 A -3248Gate-source charge Q gs -9-Gate-drain charge Q gd -12.2-Gate resistance R g f = 1 MHz

0.4 1.8 3.6ΩTurn-on delay time t d(on)V DD = -15 V, R L = 1.5 Ω

I D ≅ -10 A, V GEN = -10 V, R g = 1 Ω

-1224ns Rise time

t r -1020Turn-off delay time t d(off)-3875Fall time

t f -816Turn-on delay time t d(on)V DD = -15 V, R L = 1.5 Ω

I D ≅ -10 A, V GEN = -4.5 V, R g = 1 Ω-52100Rise time

t r -82150Turn-off delay time t d(off)-3875Fall time

t f

-15

30

Drain-Source Body Diode Characteristics Continuous source-drain diode current I S T C = 25 °C

---35A Pulse diode forward current I SM ---80Body diode voltage

V SD I S = -3 A, V GS = 0 V

--0.76-1.2V Body diode reverse recovery time t rr I F = -10 A, di/dt = 100 A/μs,

T J = 25 °C

-2140ns Body diode reverse recovery charge Q rr -1020nC Reverse recovery fall time t a -9-ns

Reverse recovery rise time

t b

-12

-