Magnetic non-volatile memory coil layout architect
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专利名称：Magnetic non-volatile memory coil layout
architecture and process integration scheme
发明人：William Frank Witcraft,Hongyue Liu,Joel E.
Drewes
申请号：US11010671
申请日：20041213
公开号：US06961265B2
公开日：
20051101
专利内容由知识产权出版社提供
专利附图：
摘要：The invention relates to methods and apparatus that allow data to be stored in a magnetic memory cell, such as a giant magneto-resistance (GMR) cell, of a
magnetoresistive random access memory (MRAM). Embodiments of the invention advantageously wind a word line around a magnetic memory cell to increase the magnetic field induced by the word line. The word line can be formed by connecting a segment in a first layer to a segment in a second layer with the memory cell disposed between the first layer and the second layer. Advantageously, embodiments of the invention can include relatively narrow magnetic memory cells, and/or bit lines, have relatively high write selectivity, and can use relatively low word currents to store data. In one MRAM, current is passed through a word line by allowing current to flow through a corresponding word row line and a corresponding word column line.
申请人：William Frank Witcraft,Hongyue Liu,Joel E. Drewes
地址：Minneapolis MN US,Plymouth MN US,Boise ID US
国籍：US,US,US
代理机构：Knobbe, Martens, Olson & Bear LLP.
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