MSD1328-RT1中文资料

be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. maximum temperature gradient should be 5°C or less. 260°C for more than 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Inc. 1996
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSD1328–RT1/D
NPN Low Voltage Output Amplifier Surface Mount
MSD1328-RT1
COLLECTOR 3
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint.
• The soldering temperature and time should not exceed • When shifting from preheating to soldering, the • After soldering has been completed, the device should
2 BASE Value 25 20 12 500 1000
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
1
CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C
1
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MSD1328-RT1
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
Motorola Pr RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IE = 0) Collector–Base Cutoff Current (VCB = 25 Vdc, IE = 0) DC Current Gain(1) (VCE = 2.0 Vdc, IC = 500 mAdc) Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc) Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) Min 20 25 12 — 200 — — Max — — — 0.1 350 0.4 1.2 Unit Vdc Vdc Vdc µAdc — Vdc Vdc
DEVICE MARKING
Marking Symbol
1DRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
0.037 0.95
0.098–0.118 2.5–3.0 0.094 2.4 0.039 1.0 0.031 0.8
inches mm
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) – TA RθJA the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C = 200 milliwatts 625°C/W