CD4015BHMS资料

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.CD4015BMS
CMOS Dual 4-Stage Static Shift Register
With Serial Input/Parallel Output
Pinout
CD4015BMS TOP VIEW
Functional Diagram
1415169131211101
23457
68
CLOCK B Q4B Q3A Q2A Q1A RESET A VSS DATA A VDD RESET B Q1B Q2B Q3B Q4A CLOCK A
DATA B DATA A CLOCK A RESET A
DATA B
CLOCK B RESET B
Q1A Q2A Q3A Q4A Q1B Q2B Q3B Q4B
VSS
VDD 796
15114
54310
1312112
16
84STAGE
4STAGE
Features
•High-Voltage Type (20V Rating)
•Medium Speed Operation 12MHz (typ.) Clock Rate at VDD - VSS = 10V •Fully Static Operation
•8 Master-Slave Flip-Flops Plus Input and Output Buffering •100% Tested For Quiescent Current at 20V •5V, 10V and 15V Parametric Ratings
•Standardized Symmetrical Output Characteristics •Maximum Input Current of 1µA at 18V Over Full Pack-age-Temperature Range; 100nA at 18V and 25o C •Noise Margin (Full Package-Temperature Range) =-1V at VDD = 5V -2V at VDD = 10V - 2.5V at VDD = 15V
•Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”
Applications
•Serial-Input/Parallel-Output Data Queueing •Serial to Parallel Data Conversion •General-Purpose Register
Description
CD4015BMS consists of two identical, independent, 4-stage serial-input/parallel output registers. Each register has inde-pendent CLOCK and RESET inputs as well as a single serial DATA input. “Q” outputs are available from each of the four stages on both registers. All register stages are D type, mas-ter-slave flip-flops. The logic level present at the DATA input is transferred into the first register stage and shifted over one stage at each positive-going clock transition. Resetting of all stages is accomplished by a high level on the reset line.Register expansion to 8 stages using one CD4015BMS package, or to more than 8 stages using additional CD4015BMS’s is possible.
The CD4015BMS is supplied in these 16 lead outline pack-ages:
Braze Seal DIP H4X Frit Seal DIP H1F Ceramic Flatpack
H6W
December 1992
File Number
3295
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . .-0.5V to +20V (Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range. . . . . . . . . . . . . . . .-55o C to +125o C Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . .-65o C to +150o C Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . .+265o C At Distance 1/16 ± 1/32 Inch (1.59mm± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . .θjaθjc Ceramic DIP and FRIT Package. . . . .80o C/W20o C/W Flatpack Package . . . . . . . . . . . . . . . .70o C/W20o C/W Maximum Package Power Dissipation (PD) at +125o C
For TA = -55o C to +100o C (Package Type D, F, K). . . . . .500mW For TA = +100o C to +125o C (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/o C to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175o C
TABLE1.DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS(NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITS
MIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND1+25o C-10µA
2+125o C-1000µA
VDD = 18V, VIN = VDD or GND3-55o C-10µA Input Leakage Current IIL VIN = VDD or GND VDD = 201+25o C-100-nA
2+125o C-1000-nA
VDD = 18V3-55o C-100-nA Input Leakage Current IIH VIN = VDD or GND VDD = 201+25o C-100nA
2+125o C-1000nA
VDD = 18V3-55o C-100nA Output Voltage VOL15VDD = 15V, No Load1, 2, 3+25o C, +125o C, -55o C-50mV Output Voltage VOH15VDD = 15V, No Load (Note 3)1, 2, 3+25o C, +125o C, -55o C14.95-V Output Current (Sink)IOL5VDD = 5V, VOUT = 0.4V1+25o C0.53-mA Output Current (Sink)IOL10VDD = 10V, VOUT = 0.5V1+25o C 1.4-mA Output Current (Sink)IOL15VDD = 15V, VOUT = 1.5V1+25o C 3.5-mA Output Current (Source)IOH5A VDD = 5V, VOUT = 4.6V1+25o C--0.53mA Output Current (Source)IOH5B VDD = 5V, VOUT = 2.5V1+25o C--1.8mA Output Current (Source)IOH10VDD = 10V, VOUT = 9.5V1+25o C--1.4mA Output Current (Source)IOH15VDD = 15V, VOUT = 13.5V1+25o C--3.5mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA1+25o C-2.8-0.7V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA1+25o C0.7 2.8V
Functional F VDD = 2.8V, VIN = VDD or GND7+25o C VOH >
VDD/2VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND7+25o C
VDD = 18V, VIN = VDD or GND8A+125o C
VDD = 3V, VIN = VDD or GND8B-55o C
Input Voltage Low
(Note 2)
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V1, 2, 3+25o C, +125o C, -55o C- 1.5V
Input Voltage High
(Note 2)
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V1, 2, 3+25o C, +125o C, -55o C 3.5-V
Input Voltage Low (Note 2)VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3+25o C, +125o C, -55o C-4V
Input Voltage High (Note 2)VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3+25o C, +125o C, -55o C11-V
NOTES: 1.All voltages referenced to device GND, 100% testing being implemented.
2.Go/No Go test with limits applied to inputs
3.For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
TABLE2.AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS(NOTE 1, 2)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITS
MIN MAX
Propagation Delay Clock To Q TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND9+25o C-320ns
10, 11+125o C, -55o C-432ns
Propagation Delay Reset To Q TPHL2VDD = 5V, VIN = VDD or GND9+25o C-400ns
10, 11+125o C, -55o C-540ns
Transition Time TTHL
TTLH VDD = 5V, VIN = VDD or GND9+25o C-200ns
10, 11+125o C, -55o C-270ns
Maximum Clock Input Frequency FCL VDD = 5V, VIN = VDD or GND9+25o C3-MHz
10, 11+125o C, -55o C3/1.35-MHz
NOTES:
1.CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2.-55o C and +125o C limits guaranteed, 100% testing being implemented.
TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITS MIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND1, 2-55o C, +25o C-5µA
+125o C-150µA
VDD = 10V, VIN = VDD or GND1, 2-55o C, +25o C-10µA
+125o C-300µA
VDD = 15V, VIN = VDD or GND1, 2-55o C, +25o C-10µA
+125o C-600µA Output Voltage VOL VDD = 5V, No Load1, 2+25o C, +125o C,
-55o C
-50mV
Output Voltage VOL VDD = 10V, No Load1, 2+25o C, +125o C,
-55o C
-50mV
Output Voltage VOH VDD = 5V, No Load1, 2+25o C, +125o C,
-55o C
4.95-V
Output Voltage VOH VDD = 10V, No Load1, 2+25o C, +125o C,
-55o C
9.95-V Output Current (Sink)IOL5VDD = 5V, VOUT = 0.4V1, 2+125o C0.36-mA
-55o C0.64-mA Output Current (Sink)IOL10VDD = 10V, VOUT = 0.5V1, 2+125o C0.9-mA
-55o C 1.6-mA Output Current (Sink)IOL15VDD = 15V, VOUT = 1.5V1, 2+125o C 2.4-mA
-55o C 4.2-mA Output Current (Source)IOH5A VDD = 5V, VOUT = 4.6V1, 2+125o C--0.36mA
-55o C--0.64mA Output Current (Source)IOH5B VDD = 5V, VOUT = 2.5V1, 2+125o C--1.15mA
-55o C--2.0mA Output Current (Source)IOH10VDD = 10V, VOUT = 9.5V1, 2+125o C--0.9mA
-55o C--1.6mA Output Current (Source)IOH15VDD =15V, VOUT = 13.5V1, 2+125o C--2.4mA
-55o C--4.2mA Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V1, 2+25o C, +125o C,
-55o C
-3V
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V1, 2+25o C, +125o C,
-55o C
+7-V
Propagation Delay Clock To Q TPHL1
TPLH1
VDD = 10V1, 2, 3+25o C-160ns VDD = 15V1, 2, 3+25o C-120ns
Propagation Delay Reset To Q TPHL2VDD = 10V1, 2, 3+25o C-200ns VDD = 15V1, 2, 3+25o C-160ns
Transition Time TTHL
TTLH VDD = 10V1, 2, 3+25o C-100ns VDD = 15V1, 2, 3+25o C-80ns
Maximum Clock Input Frequency FCL VDD = 10V1, 2, 3+25o C6-MHz VDD = 15V1, 2, 3+25o C8.5-MHz
Minimum Data Setup Time TS VDD = 5V1, 2, 3+25o C-70ns VDD = 10V1, 2, 3+25o C-40ns VDD = 15V1, 2, 3+25o C-30ns
Clock Rise and Fall Time TRCL
TFCL VDD = 5V1, 2, 3+25o C-15µs VDD = 10V1, 2, 3+25o C-15µs VDD = 15V1, 2, 3+25o C-15µs
Minimum Clock Pulse Width TWCL VDD = 5V1, 2, 3+25o C-180ns VDD = 10V1, 2, 3+25o C-80ns VDD = 15V1, 2, 3+25o C-50ns
Minimum Reset Pulse Width TWR VDD = 5V2, 3+25o C-200ns VDD = 10V2, 3+25o C-80ns VDD = 15V2, 3+25o C-60ns
Input Capacitance CIN Any Input1, 2+25o C-7.5pF NOTES:
1.All voltages referenced to device GND.
2.The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3.CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE4.POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITS MIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND1, 4+25o C-25µA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA1, 4+25o C-2.8-0.2V N Threshold Voltage
Delta
∆VNTH VDD = 10V, ISS= -10µA1, 4+25o C-±1V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA1, 4+25o C0.2 2.8V P Threshold Voltage
Delta
∆VPTH VSS = 0V, IDD = 10µA1, 4+25o C-±1V
Functional F VDD = 18V, VIN = VDD or GND1+25o C VOH >
VDD/2VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V1, 2, 3, 4+25o C- 1.35 x
+25o C
Limit
ns
NOTES: 1.All voltages referenced to device GND.
2.CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3.See Table 2 for +25o C limit.
4.Read and Record
TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITS MIN MAX
TABLE5.BURN-IN AND LIFE TEST DELTA PARAMETERS +25O C PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2IDD± 1.0µA
Output Current (Sink)IOL5± 20% x Pre-Test Reading Output Current (Source)IOH5A± 20% x Pre-Test Reading
TABLE6.APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A PDA (Note 1)100% 50041, 7, 9, Deltas
Interim Test 3 (Post Burn-In)100% 50041, 7, 9IDD, IOL5, IOH5A PDA (Note 1)100% 50041, 7, 9, Deltas
Final Test100% 50042, 3, 8A, 8B, 10, 11
Group A Sample 50051, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5Sample 50051, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11 Subgroup B-6Sample 50051, 7, 9
Group D Sample 50051, 2, 3, 8A, 8B, 9Subgroups 1, 2 3
NOTE:1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE7.TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 250051, 7, 9Table 41, 9Table 4
TABLE8.BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD9V± -0.5V
OSCILLATOR
50kHz25kHz
Static Burn-In 1
Note 1
2 - 5, 10 - 131, 6 - 9, 14, 1516
Static Burn-In 2
Note 1
2 - 5, 10 - 1381, 6, 7, 9, 14 - 16
Dynamic Burn-
In Note 1
-6, 8, 1416 2 - 5, 10 - 131, 97, 15
Irradiation
Note 2
2 - 5, 10 - 1381, 6, 7, 9, 14 - 16
NOTE:
1.Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V± 0.5V
2.Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V± 0.5V
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Logic Diagram
FIGURE 1.CD4015BMS LOGIC DIAGRAM
TRUTH TABLE
CL
D R Q1Qn 000Qn-1101Qn-1X
0Q1Qn (No Change)
X
X
1
X = Don’t care Case
D Q Q CL R
p n
CL CL
D
D Q
CL Q R
CL CL
Q
D Q Q CL R
D Q Q CL R
D Q
Q
CL R
p n
CL CL
p n
CL
CL
p
n
CL
CL
VDD
VSS
CL
R
Q
13Q1(5)
12Q2(4)
11
Q3(3)
2
Q4
(10)
15DATA
(7)
*
1CLOCK
(9)
*
14RESET
(6)
*
*ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION NETWORK
≡
Typical Performance Characteristics
FIGURE 2.TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 3.MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 4.TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS FIGURE 5.MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6.TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE FIGURE 7.TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF LOAD CAPACITANCE
10V
5V AMBIENT TEMPERATURE (T A ) = +25o C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
5
10
15
151********DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
O U T P U T L O W (S I N K ) C U R R E N T (I O L ) (m A )
AMBIENT TEMPERATURE (T A ) = +25o C
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
10V
5V
O U T P U T L O W (S I N K ) C U R R E N T (I O L ) (m A )
15
12.5107.552.5
51015
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-10V
-15V
AMBIENT TEMPERATURE (T A ) = +25o C
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0-5-10-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-20-25
-30
-5
-10-15O U T P U T H I G H (S O U R C E ) C U R R E N T (I O H ) (m A )
-10V
-15V
AMBIENT TEMPERATURE (T A ) = +25o C
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-5
-10-15O U T P U T H I G H (S O U R C E ) C U R R E N T (I O H ) (m A )GATE-TO-SOURCE VOLTAGE (VGS) = -5V
AMBIENT TEMPERATURE (T A ) = +25o C
LOAD CAPACITANCE (CL) (pF)
40608010020
050
100
150200
SUPPL Y VOLTAGE (VDD) = 5V
10V
15V
T R A N S I T I O N T I M E (t T H L , t T L H ) (n s )
AMBIENT TEMPERATURE (T A ) = +25o C
LOAD CAPACITANCE (CL) (pF)
406080
100
20
50100
150
200
SUPPL Y VOLTAGE (VDD) = 5V
P R O P A G A T I O N D E L A Y T I M E (t P H L , t P L H ) (n s )
15V
10V 250
Chip Dimensions and Pad Layout
FIGURE 8.TYPICAL POWER DISSIPATION AS
A FUNCTION OF FREQUENCY
Typical Performance Characteristics
(Continued)
CL = 50pF CL = 15pF
AMBIENT TEMPERATURE (T A ) = +25o C SUPPLY VOLTAGE (VDD) = 15V
10V 5V
10V tr, tf = 20ns RL = 200k Ω
1
2
468
102468102246810324681042468
CLOCK INPUT FREQUENCY (fCL) (kHz)
105
10
1022
8
641032
8
641042
8
641052
8
64P O W E R D I S S I P A T I O N (P D ) (µW )
Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
METALLIZATION:Thickness: 11k Å−14k Å, AL.PASSIVATION:10.4kÅ - 15.6k Å, Silane
BOND PADS:0.004 inches X 0.004 inches MIN DIE THICKNESS:0.0198 inches - 0.0218 inches
DIE SIZE:X = 80 (77 - 85) = (1.956 - 2.159)
Y = 98 (95 - 103) = (2.413 - 2.616)
13
3
14
15
12
11
102
1
16
4
5
6
7
89
98
80。