BTS4141D资料
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元器件交易网
BTS 4141D
Smart High-Side Power Switch 1 Channel: 1 x 200mΩ
Features • Short circuit protection • Current limitation • Overload protection Product Summary Overvoltage protection Operating voltage Vbb(AZ) Vbb(on) RON 47 200 V mΩ 12...45 V
Page 1
2004-41D
Block Diagram
+ Vbb
Voltage source V Logic Voltage sensor
R in
TAB/3
Overvoltage protection
Current limit
Gate protection
P-TO252-5-1
Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits
On-state resistance • Overvoltage protection (including load dump) • Undervoltage shutdown with autorestart and hysteresis • Switching inductive loads • Clamp of negative voltage at output with inductive loads • CMOS compatible input • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection with external resistor • Improved electromagnetic compatibility (EMC)
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed ±5 mA. IN 3defined by P tot 4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 5not subject to production test, specified by design 6V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 )
Page 2
2004-01-27
元器件交易网
BTS 4141D Maximum Ratings Parameter at Tj = 25°C, unless otherwise specified Supply voltage Continuous input voltage2) Load current (Short - circuit current, see page 5) Current through input pin (DC) Reverse current through GND-pin 3) Operating temperature Storage temperature Power dissipation 4) Inductive load switch-off energy dissipation 4)5) single pulse Tj = 125 °C, IL = 0.5 A Load dump protection 5) VLoadDump6)= VA + VS RI=2Ω, td=400ms, VIN= low or high, VA=13,5V RL = 47 Ω Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins ±1 ±5 83 kV VLoaddump V Vbb VIN IL I IN -I GND Tj T stg Ptot EAS -0,31)...48 -10...Vbb self limited ±5 -0.5 internal limited -55 ... +150 1.4 12 W J A mA A °C V Symbol Value Unit
Page 4
2004-01-27
元器件交易网
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Standby current Tj = -40...85 °C, V IN ≤ 1,2 V Tj = 125 °C1) Operating current Leakage output current (included in Ibb(off)) VIN ≤ 1,2 V Protection Functions2) Initial peak short circuit current limit Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 125 °C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), I bb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature 4) Thermal hysteresis Tjt ∆Tjt 135 10 °C K VON(CL) Vbb(AZ) 47 47 52 V IL(SCr) IL(SCp) 0.7 1.4 1.1 2.1 A IGND IL(off) Ibb(off) 10 1 3.5 25 50 1.6 10 mA µA µA Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) 12 7 0.5 45 10.5 11 V Symbol min. Values typ. max. Unit
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads
OUT
Temperature sensor
1
5
IN
ESD
Logic
Load
GND
miniPROFET®
Load GND
4
Signal GND
Pin 1 2 3 4 5 TAB
Symbol OUT NC Vbb GND IN Vbb
Function Output to the load not connected connected with TAB Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage
Page 3
2004-01-27
元器件交易网
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Thermal Characteristics Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - case Load Switching Capabilities and Characteristics On-state resistance Tj = 25 °C, IL = 0.5 A Tj = 125 °C Nominal load current2) Device on PCB 1) Turn-on time Turn-off time Slew rate on Slew rate off to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% VOUT , ton toff dV/dton -dV/dtoff 1 2 1 2 75 150 V/µs 50 100 µs RL = 47 Ω, VIN = 0 to 10 V RL = 47 Ω, VIN = 10 to 0 V RL = 47 Ω, Vbb = 15 V RL = 47 Ω, Vbb = 15 V IL(nom) RON 0.7 150 270 200 320 A mΩ Rth(JA) RthJC 60 3 K/W K/W Symbol min. Values typ. max. Unit
BTS 4141D
Smart High-Side Power Switch 1 Channel: 1 x 200mΩ
Features • Short circuit protection • Current limitation • Overload protection Product Summary Overvoltage protection Operating voltage Vbb(AZ) Vbb(on) RON 47 200 V mΩ 12...45 V
Page 1
2004-41D
Block Diagram
+ Vbb
Voltage source V Logic Voltage sensor
R in
TAB/3
Overvoltage protection
Current limit
Gate protection
P-TO252-5-1
Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits
On-state resistance • Overvoltage protection (including load dump) • Undervoltage shutdown with autorestart and hysteresis • Switching inductive loads • Clamp of negative voltage at output with inductive loads • CMOS compatible input • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection with external resistor • Improved electromagnetic compatibility (EMC)
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed ±5 mA. IN 3defined by P tot 4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 5not subject to production test, specified by design 6V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 )
Page 2
2004-01-27
元器件交易网
BTS 4141D Maximum Ratings Parameter at Tj = 25°C, unless otherwise specified Supply voltage Continuous input voltage2) Load current (Short - circuit current, see page 5) Current through input pin (DC) Reverse current through GND-pin 3) Operating temperature Storage temperature Power dissipation 4) Inductive load switch-off energy dissipation 4)5) single pulse Tj = 125 °C, IL = 0.5 A Load dump protection 5) VLoadDump6)= VA + VS RI=2Ω, td=400ms, VIN= low or high, VA=13,5V RL = 47 Ω Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins ±1 ±5 83 kV VLoaddump V Vbb VIN IL I IN -I GND Tj T stg Ptot EAS -0,31)...48 -10...Vbb self limited ±5 -0.5 internal limited -55 ... +150 1.4 12 W J A mA A °C V Symbol Value Unit
Page 4
2004-01-27
元器件交易网
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Standby current Tj = -40...85 °C, V IN ≤ 1,2 V Tj = 125 °C1) Operating current Leakage output current (included in Ibb(off)) VIN ≤ 1,2 V Protection Functions2) Initial peak short circuit current limit Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 125 °C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), I bb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature 4) Thermal hysteresis Tjt ∆Tjt 135 10 °C K VON(CL) Vbb(AZ) 47 47 52 V IL(SCr) IL(SCp) 0.7 1.4 1.1 2.1 A IGND IL(off) Ibb(off) 10 1 3.5 25 50 1.6 10 mA µA µA Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) 12 7 0.5 45 10.5 11 V Symbol min. Values typ. max. Unit
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads
OUT
Temperature sensor
1
5
IN
ESD
Logic
Load
GND
miniPROFET®
Load GND
4
Signal GND
Pin 1 2 3 4 5 TAB
Symbol OUT NC Vbb GND IN Vbb
Function Output to the load not connected connected with TAB Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage
Page 3
2004-01-27
元器件交易网
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Thermal Characteristics Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - case Load Switching Capabilities and Characteristics On-state resistance Tj = 25 °C, IL = 0.5 A Tj = 125 °C Nominal load current2) Device on PCB 1) Turn-on time Turn-off time Slew rate on Slew rate off to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% VOUT , ton toff dV/dton -dV/dtoff 1 2 1 2 75 150 V/µs 50 100 µs RL = 47 Ω, VIN = 0 to 10 V RL = 47 Ω, VIN = 10 to 0 V RL = 47 Ω, Vbb = 15 V RL = 47 Ω, Vbb = 15 V IL(nom) RON 0.7 150 270 200 320 A mΩ Rth(JA) RthJC 60 3 K/W K/W Symbol min. Values typ. max. Unit