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MB89W857资料

DS07-12535-2EFUJITSU SEMICONDUCTORDATA SHEET8-bit Proprietary MicrocontrollerCMOSF 2MC-8L MB89850R SeriesMB89855R/P857/W857s DESCRIPTIONThe MB89850R series has been developed as a general-purpose version of the F 2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.In addition to the F 2MC-8L CPU core which can operate at low voltage but at high speed, the microcontrollers contain a variety of peripheral functions such as a timer unit, PWM timers, a UART, a serial interface, a 10-bit A/D converter, and an external interrupt.The MB89850R series is applicable to a wide range of applications from consumer products to industrial equipment, including portable devices.*: F 2MC stands for FUJITSU Flexible Microcontroller.s FEATURES•Various package optionsSDIP package (64 pins)/QFP package (64 pins)•High-speed processing at low voltageMinimum execution time: 0.4 µs/3.5 V, 0.8 µs/2.7 V(Continued)MB89850R Series2(Continued)•F2MC-8L family CPU coreMultiplication and division instructions16-bit arithmetic operationsTest and branch instructionsBit manipulation instructions, etc.•8-bit PWM timers: 2 channelsAlso usable as a reload timer•UARTFull-duplex double bufferSynchronous and asynchronous data transfer•8-bit serial I/OSwitchable transfer direction allows communication with various equipment.•10-bit A/D converterConversion time: 13.2 µsActivation by an external input or a timer unit capable•External interrupt: 4 channelsFour channels are independent and capable of wake-up from low-power consumption modes (with an edge detection function).•Low-power consumption modesStop mode (Oscillation stops to minimize the current consumption.)Sleep mode (The CPU stops to reduce the current consumption to approx. 1/3 of normal.)•Bus interface functionsIncluding hold and ready functions•Timer unitOutputs non-overlap three-phase waveforms to control an AC inverter motor.Also usable as a PWM timer (4 channels)Instruction set optimized for controllersMB89850R Series3s PRODUCT LINEUP* :Varies with conditions such as the operating frequency. (See section “s Electrical Characteristics.”)MB89855RMB89P857MB89W857Classification Mass production products (mask ROM products)One-time PROM pruducts/EPROM products, also used for evaluation ROM size16 K × 8 bits (internal mask ROM)32 K × 8 bits(internal PROM, programming with general-purpose EPROM programmer)RAM size 512 × 8 bits1 K × 8 bitsCPU functionsNumber of instructions: 136Instruction bit length: 8 bitsInstruction length: 1 to 3 bytes Data bit length:1, 8, 16 bits Minimum execution time: 0.4 µs/10 MHz Interrupt processing time:3.6 µs/10 MHzPortsInput ports: 5 (All also serve as peripherals)Output ports (N-ch open drain): 8 (All also serve as peripherals)Output ports (CMOS): 8 (All also serve as bus control pins)I/O ports (CMOS): 32 (All also serve as bus pins or peripherals)T otal: 53Timer unit10-bit up/down count timer × 1Compare registers with buffer × 4Compare timer unit clear register with buffer × 1Zero detection pin control4 output channelsNon-overlap three-phase waveform output Independent three-phase dead-time timer8-bit PWM timer 1,8-bit PWM timer 28-bit reload timer operation (toggled output capable, operating clock cycle: 0.4 µs to 25.6 µs)8-bit resolution PWM operation (conversion cycle: 102 µs to 6.528 ms)UART 8 bitsClock synchronous/asynchronous data transfer capable8-bit serial I/O8 bitsLSB first/MSB first selectabilityOne clock selectable from four transfer clocks(one external shift clock, three internal shift clocks: 0.8 µs, 3.2 µs, 12.8 µs)10-bit A/D converter10-bit resolution × 8 channels A/D conversion time: 13.2 µsContinous activation by a compare channel 0 in timer unit or an external activation capableExternal interrupt4 independent channels (edge selection, interrupt vector, source flag)Rising edge/falling edge selectability.Used also for wake-up from stop/sleep mode. (Edge detection is also permitted in stop mode.)Standby modes Sleep mode, stop modeProcessCMOSOperating voltage*2.7 V to 6.0 V2.7 V to 5.5 VParameterPart numberMB89850R Series4s PACKAGE AND CORRESPONDING PRODUCTS: Available × : Not availableNote:For more information about each package, see section “s Package Dimensions.”s DIFFERENCES AMONG PRODUCTS1.Memory SizeBefore evaluating using the OTPROM (one-time PROM) products (also used for evaluation), verify its differences from the product that will actually be used.T ake particular care on the following point:•The stack area, etc., is set at the upper limit of the RAM.2.Current ConsumptionWhen operated at low speed, the product with an OTPROM or an EPROM will consume more current than the product with a mask ROM.However, the current consumption in sleep/stop modes is the same.3.Mask OptionsIn the MB89P857/W857, no option can be set.Before using options check section “s Mask Options.”T ake particular care on the following point:•A pull-up resistor can be set for P00 to P07, P10 to P17 and P20 to P27 only at single-chip mode.Package MB89855R MB89P857MB89W857DIP-64P-M01×DIP-64C-A06××FPT-64P-M06×FPT-64C-A02××MB89850R Series s PIN ASSIGNMENT5MB89850R Series6MB89850R Series7s PIN DESCRIPTION(Continued)*1:DIP-64P-M01, DIP-64C-A06*2:FPT -64P-M06, FPT -64C-A02Pin no.Pin name Circuit type FunctionSH-DIP *1QFP *23023X0ACrystal oscillator pins (10 MHz)3124X12821MOD0BOperating mode selection pins Connect directly to V CC or V SS .2922MOD12720RSTC Reset I/O pinThis pin is an N-ch open-drain output type with a pull-up resistor, and a hysteresis input type. “L” is output from this pin by an internal reset source. The internal circuit is initialized by the input of “L”.56 to 4949 to 42P00/AD0 to P07/AD7DGeneral-purpose I/O portsWhen an external bus is used, these ports function as multiplex pins of lower address output and data I/O.48 to 4141 to 34P10/A08 to P17/A15DGeneral-purpose I/O portsWhen an external bus is used, these ports function as upper address output.4033P20/BUFCFGeneral-purpose output portWhen an external bus is used, this port can also be used as a buffer control output.3932P21/HAK FGeneral-purpose output portWhen an external bus is used, this port can also be used as a hold acknowledge output.3831P22/HRQ DGeneral-purpose output portWhen an external bus is used, this port can also be used as a hold request input.3730P23/RDY DGeneral-purpose output portWhen an external bus is used, this port functions as a ready input.3629P24/CLK FGeneral-purpose output portWhen an external bus is used, this port functions as a clock output.3528P25/WR FGeneral-purpose output portWhen an external bus is used, this port functions as a write signal output.3427P26/RD FGeneral-purpose output portWhen an external bus is used, this port functions as a read signal output.3326P27/ALE FGeneral-purpose output portWhen an external bus is used, this port functions as an address latch signal output.259P30/SCK1EGeneral-purpose I/O portAlso serves as the clock I/O for the UART .This port is a hysteresis input type.MB89850R Series8(Continued)(Continued) *1:DIP-64P-M01, DIP-64C-A06*2:FPT-64P-M06, FPT-64C-A02Pin no.Pin name Circuittype FunctionSH-DIP*1QFP*2158P31/SO1E General-purpose I/O portAlso serves as the data output for the UART.This port is a hysteresis input type.6356P32/SI1E General-purpose I/O portAlso serves as the data input for the UART.This port is a hysteresis input type.6255P33/SCK2E General-purpose I/O portAlso serves as the clock I/O for the 8-bit serial I/O.This port is a hysteresis input type.6154P34/SO2E General-purpose I/O portAlso serves as the data output for the 8-bit serial I/O.This port is a hysteresis input type.6053P35/SI2E General-purpose I/O portAlso serves as the data input for the 8-bit serial I/O.This port is a hysteresis input type.5952P36/PTO1E General-purpose I/O portAlso serves as the pulse output for the 8-bit PWM timer 1.This port is a hysteresis input type.5851P37/PTO2E General-purpose I/O portAlso serves as the pulse output for the 8-bit PWM timer 2.This port is a hysteresis input type.103P40/RTO0E General-purpose I/O portAlso serves as the pulse output for the timer unit.This port is a hystereisis input type.9,8,72,1,64P41/RTO1/U,P42/RTO2/V,P43/RTO3/WE General-purpose I/O portsAlso serve as the pulse output or non-overlap three-phase waveform output for the timer unit.These ports are a hysteresis input type.6,5,463,62,61P44/X,P45/Y,P46/ZE General-purpose I/O portsAlso serve as a non-overlap three-phase waveformoutput.These ports are a hysteresis input type.360P47/TRGI E General-purpose I/O portAlso serves as the trigger input for the timer unit.This port is a hysteresis input type.11 to 18 4 to 11P50/AN0 toP57/AN7G N-ch open-drain output portsAlso serve as the analog input for the A/D converter.26 to 2419 to 17P60/INT0 toP62/INT2H General-purpose input portsAlso serve as an external interrupt input.These ports are a hysteresis input type.2316P63/INT3/ADSTH General-purpose input portAlso serves as an external interrupt input and as theactivation trigger input for the A/D converter.This port is a hysteresis input type.MB89850R Series9(Continued)*1:DIP-64P-M01, DIP-64C-A06*2:FPT -64P-M06, FPT -64C-A02Pin no.Pin name Circuit type FunctionSH-DIP *1QFP *22215P64/DTTIHGeneral-purpose input portAlso serves as a dead-time timer disable input.This port is a hysteresis input type.DTTI input is with a noise canceller.6457V CC —Power supply pin 32, 5725, 50V SS —Power supply (GND) pins 1912AV CC —A/D converter power supply pin2013AVR —A/D converter reference voltage input pin 2114AV SS—A/D converter power supply (GND) pin Use this pin at the same voltage as V SS .MB89850R Series10s I/O CIRCUIT TYPE(Continued)(Continued)s HANDLING DEVICES1.Preventing LatchupLatchup may occur on CMOS ICs if voltage higher than V CC or lower than V SS is applied to input and output pins other than medium- and high-voltage pins or if higher than the voltage which shows on “1. Absolute Maximum Ratings” in section “s Electrical Characteristics” is applied between V CC and V SS.When latchup occurs, power supply current increases rapidly and might thermally damage elements. When using, take great care not to exceed the absolute maximum ratings.Also, take care to prevent the analog power supply (AV CC and AVR) and analog input from exceeding the digital power supply (V CC) when the analog system power supply is turned on and off.2.Treatment of Unused Input PinsLeaving unused input pins open could cause malfunctions. They should be connected to a pull-up or pull-down resistor.3.Treatment of Power Supply Pins on Microcontrollers with A/D and D/A ConvertersConnect to be AV CC = DAVC = V CC and AV SS = AVR = V SS even if the A/D and D/A converters are not in use. 4.Treatment of N.C. PinBe sure to leave (internally connected) N.C. pin open.5.Power Supply Voltage FluctuationsAlthough V CC power supply voltage is assured to operate within the rated range, a rapid fluctuation of the voltage could cause malfunctions, even if it occurs within the rated range. Stabilizing voltage supplied to the IC is therefore important. As stabilization guidelines, it is recommended to control power so that V CC ripple fluctuations (P-P value) will be less than 10% of the standard V CC value at the commercial frequency (50 to 60 Hz) and the transient fluctuation rate will be less than 0.1 V/ms at the time of a momentary fluctuation such as when power is switched.6.Precautions when Using an External ClockEven when an external clock is used, oscillation stabilization time is required for power-on reset (optional) and wake-up from stop mode.s PROGRAMMING TO THE EPROM ON THE MB89P857/W857The MB89P857/W857 are an OTPROM version of the MB89850R series.1.Features•32-Kbyte PROM on chip•Equivalency to the MBM27C256A in EPROM mode (when programmed with the EPROM programmer)2.Memory SpaceMemory space in EPROM mode is diagrammed below.3.Programming to the EPROMIn EPROM mode, the MB89P857/W857 functions equivalent to the MBM27C256A. This allows the PROM to be programmed with a general-purpose EPROM programmer (the electronic signature mode cannot be used) by using the dedicated socket adapter.•Programming procedure(1)Set the EPROM programmer to the MBM27C256A.(2)Load program data into the EPROM programmer at 0000H to 7FFF H (note that addresses 8000H to FFFF Hwhile operating as a single chip assign to addresses 0000H to 7FFF H in EPROM mode.)(3)Program to 0000H to 7FFF H with the EPROM programmer.4.Recommended Screening ConditionsHigh-temperature aging is recommended as the pre-assembly screening procedure for a product with a blanked OTPROM microcomputer program.5.Programming YieldAll bits cannot be programmed at Fujitsu shipping test to a blanked OTPROM microcomputer, due to its nature.For this reason, a programming yield of 100% cannot be assured at all times.6.ErasureIn order to clear all locations of their programmed contents, it is necessary to expose the internal EPROM to an ultraviolet light source. A dosage of 10 W-seconds/cm 2 is required to completely erase an internal EPROM. This dosage can be obtained by exposure to an ultraviolet lamp (wavelength of 2537 Angstroms (Å)) with intensity of 12000 µW/cm 2 for 15 to 21 minutes. The internal EPROM should be about one inch from the source and all filters should be removed from the UV light source prior to erasure.It is important to note that the internal EPROM and similar devices, will erase with light sources having wavelengths shorter than 4000 Å. Although erasure time will be much longer than with UV source at 2537 Å,nevertheless the exposure to fluorescent light and sunlight will eventually erase the internal EPROM, and exposure to them should be prevented to realize maximum system reliability. If used in such an environment,the package windows should be covered by an opaque label or substance.7.EPROM Programmer Socket Adapter* :Connect the adapter jumper pin to V SS when using.Inquiry: Sun Hayato Co., Ltd.: Fax 81-3-5396-9106Package Compatible socket adapter DIP-64P-M01ROM-64SD-28DP-8L*FPT -64P-M06ROM-64QF-28DP-8L FPT -64P-A02ROM-64QF-28DP-8L5s BLOCK DIAGRAMs CPU CORE1.Memory SpaceThe microcontrollers of the MB89850R series offer a memory space of 64 Kbytes for storing all of I/O, data, and program areas. The I/O area is located at the lowest address. The data area is provided immediately above the I/O area. The data area can be divided into register, stack, and direct areas according to the application. The program area is located at exactly the opposite end, that is, near the highest address. Provide the tables of interrupt reset vectors and vector call instructions toward the highest address within the program area. The memory space of the MB89860/850 series is structured as illustrated below.2.RegistersThe F2MC-8L family has two types of registers; dedicated registers in the CPU and general-purpose registers in the memory. The following dedicated registers are provided:Program counter (PC): A 16-bit register for indicating instruction storage positionsAccumulator (A): A 16-bit temporary register for storing arithmetic operations, etc. When theinstruction is an 8-bit data processing instruction, the lower byte is used.T emporary accumulator (T): A 16-bit register which performs arithmetic operations with the accumulatorWhen the instruction is an 8-bit data processing instruction, the lower byte is used.Index register (IX): A 16-bit register for index modificationExtra pointer (EP): A 16-bit pointer for indicating a memory addressStack pointer (SP): A 16-bit register for indicating a stack areaProgram status (PS): A 16-bit register for storing a register pointer, a condition codeThe PS can further be divided into higher 8 bits for use as a register bank pointer (RP) and the lower 8 bits for use as a condition code register (CCR). (See the diagram below.)The RP indicates the address of the register bank currently in use. The relationship between the pointer contents and the actual address is based on the conversion rule illustrated below.The CCR consists of bits indicating the results of arithmetic operations and the contents of transfer data and bits for control of CPU operations at the time of an interrupt.H-flag:Set when a carry or a borrow from bit 3 to bit 4 occurs as a result of an arithmetic operation. Clearedotherwise. This flag is for decimal adjustment instructions. I-flag:Interrupt is allowed when this flag is set to 1. Interrupt is prohibited when the flag is set to 0. Set to 0when reset.IL1, 0:Indicates the level of the interrupt currently allowed. Processes an interrupt only if its request level is higher than the value indicated by this bit.N-flag:Set if the MSB is set to 1 as the result of an arithmetic operation. Cleared when the bit is set to 0. Z-flag:Set when an arithmetic operation results in 0. Cleared otherwise.V-flag:Set if the complement on 2 overflows as a result of an arithmetic operation. Reset if the overflow does not occur.C-flag:Set when a carry or a borrow from bit 7 occurs as a result of an arithmetic operation. Cleared otherwise.Set to the shift-out value in the case of a shift instruction.IL1IL0 Interrupt levelHigh-low 001HighLow = no interrupt01102113The following general-purpose registers are provided:General-purpose registers: An 8-bit register for storing dataThe general-purpose registers are 8 bits and located in the register banks of the memory. One bank contains eight registers and up to a total of 32 banks can be used on the MB89850R series. The bank currently in use is indicated by the register bank pointer (RP).Note:The number of register banks that can be used varies with the RAM size.s I/O MAPAddress Read/write Register name Register description 00H(R/W)PDR0Port 0 data register01H(W)DDR0Port 0 data direction register02H(R/W)PDR1Port 1 data register03H(W)DDR1Port 1 data direction register04H(R/W)PDR2Port 2 data register05H(W)BCTR External bus pin control register06H Vacancy07H Vacancy08H(R/W)STBC Standby control register09H(W)WDTC Watchdog timer control register0A H(R/W)TBTC Timebase timer control register0B H Vacancy0C H(R/W)PDR3Port 3 data register0D H(W)DDR3Port 3 data direction register0E H(R/W)PDR4Port 4 data register0F H(W)DDR4Port 4 data direction register10H(R/W)PDR5Port 5 data register11H Vacancy12H(R)PDR6Port 6 data register13H Vacancy14H(R/W)PDR7Port 7 data register15H Vacancy16H(R/W)PDR8Port 8 data register17H to 1B H Vacancy1C H(R/W)CTR1PWM control register 11D H(W)CMR1PWM compare register 11E H(R/W)CTR2PWM control register 21F H(W)CMR2PWM compare register 220H(R/W)SMC UART serial mode control register21H(R/W)SRC UART serial rate control register22H(R/W)SSD UART serial status/data register23H(R/W)SIDR/SODR UART serial data register24H(R/W)SMR Serial mode register25H(R/W)SDR Serial data register(Continued)(Continued)Address Read/write Register name Register description 26H(R/W)EIC1External interrupt control register 127H(R/W)EIC2External interrupt control register 228H(R/W)ADC1A/D converter control register 129H(R/W)ADC2A/D converter control register 22A H(R)ADDH A/D converter data register (H)2B H(R)ADDL A/D converter data register (L)2C H Vacancy2D H(W)ZOCTR Zero detection output control register2E H(W)CLRBRH Compare clear buffer register (H)2F H(W)CLRBRL Compare clear buffer register (L)30H(R/W)TCSR Timer control status register31H(R/W)CICR Compare interrupt control register32H(R/W)TMCR Timer mode control register33H(R/W)COER Compare/port selection register34H(R/W)CMCR Compare buffer mode control register35H(R/W)DTCR Dead-time timer control register36H(W)DTSR Dead-time setting register37H(R/W)OCTBR Output control buffer register38H(W)OCPBR0H Output compare buffer register 0 (H)39H(W)OCPBR0L Output compare buffer register 0 (L)3A H(W)OCPBR1H Output compare buffer register 1 (H)3B H(W)OCPBR1L Output compare buffer register 1 (L)3C H(W)OCPBR2H Output compare buffer register 2 (H)3D H(W)OCPBR2L Output compare buffer register 2 (L)3E H(W)OCPBR3H Output compare buffer register 3 (H)3F H(W)OCPBR3L Output compare buffer register 3 (L) 40H to 7B H Vacancy7C H(W)ILR1Interrupt level setting register 17D H(W)ILR2Interrupt level setting register 27E H(W)ILR3Interrupt level setting register 37F H VacancyNotes:•Do not use vacancies.•When a read-modify-write instruction (such as bit set) is used to access a write-only register or a register containing a write-only bit, a bit designated by the instruction will have a predetermined value. However,a write-only bit included, if any, in bits not defined by the instruction will cause a malfunction. So no accessto the register should be tried with any read-modefy-write instruction.s ELECTRICAL CHARACTERISTICS1.Absolute Maximum Ratings(AV SS = V SS = 0.0 V)*:Use AV CC and V CC set at the same voltage.T ake care so that AV CC does not exceed V CC , such as when power is turned on.WARNING:Permanent device damage may occur if the above “Absolute Maximum Ratings” are exceeded.Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ParameterSymbol Value Unit RemarksMin.Max.Power supply voltageV CC AV CCV SS – 0.3V SS + 7.0V *A/D converter reference input voltage AVR V SS – 0.3V SS + 7.0V AVR must not exceed AV CC + 0.3 V .Program voltage V PP V SS – 0.313.0V MOD1 pins of MB89P857/W857Input voltage V I V SS – 0.3V CC + 0.3V Output voltageV O V SS – 0.3V SS + 0.3V “L” level maximum output currentI OL —20mA “L” level average output currentI OLAV1—4mA P00 to P07, P10 to P17,P20 to P27, P30 to P37,P50 to P57I OLAV2—15mA P40 to P47“L” level total average output currentΣI OLAV1—30mA P00 to P07, P10 to P17,P20 to P27, P30 to P37,P50 to P57ΣI OLAV2—50mA P40 to P47“H” level maximum output current I OH —–20mA “H” level average output current I OHAV —–4mA “H” level total maximum output currentΣI OH —–20mA Power consumption P D —300mW Operating temperature T A –40+85°C Storage temperatureTstg–55+150°C2.Recommended Operating Conditions(AV SS = V SS = 0.0 V)*:These values vary with the operating frequency, instruction cycle, and analog assurance range. See Figure 1 and “5. A/D Converter Electrical Characteristics.”Note:Connect the MOD0 and MOD1 pins to V CC or V SS .Figure 1 Operating Voltage vs. Clock Operating FrequencyParameterSymbolValue Unit RemarksMin.Max.Power supply voltageV CC AV CC2.7*6.0*V Normal operation assurance range*MB89855R2.7* 5.5*V Normal operation assurance range*MB89P857/W8551.56.0V Retains the RAM state in stop modeA/D converter reference inputvoltageAVR0.0AV CC V Operating temperatureT A–40+85°C3.DC Characteristics(AV CC = V CC = +5.0 V, AV SS = V SS = 0.0 V, T A = –40°C to +85°C)Parameter Symbol Pin name ConditionValueUnit Remarks Min.Typ.Max.“H” level input voltage V IHP00 to P07,P10 to P17,P22, P23—0.7 V CC—V CC + 0.3V V IHSRST, P30 to P37,P40 to P47,P60 to P64—0.8 V CC—V CC + 0.3V“L” level input voltage V ILP00 to P07,P10 to P17,P22, P23—V SS – 0.3—0.3 V CC V V ILSRST, P30 to P37,P40 to P47,P60 to P64—V SS – 0.3—0.2 V CC V“H” level output voltage V OH P00 to P07,P10 to P17,P20 to P27,P30 to P37,P40 to P47I OH = –2.0 mA 2.4——V“L” level output voltage V OLP00 to P07,P10 to P17,P20 to P27,P30 to P37,P50 to P57I OL = +1.8 mA——0.4V V OL2P40 to P47I OL = +1.5 mA—— 1.5VInput leackage current I LI1P00 to P07,P10 to P17,P20 to P27,P30 to P37,P40 to P47,P60 to P64,MOD0, MOD10.0 V < VI < V CC——±5µAPull-up resistance R PULL RST V I = 0.0 V2550100kΩWith pull-upresistorPower supply current I CCV CCF C = 10 MHzNormaloperation mode(External clock)—1518mA I CCSF C = 10 MHzSleep mode(External clock)—68mAI CCH Stop modeT A = +25°C——10µA I A AV CCF C = 10 MHz,when A/Dconversion isactivated—6—µAInput capacitance C IN Other than AV CC,AV SS, V CC, and V SS f = 1 MHz—10—pF4.AC Characteristics(1)Reset Timing(V CC = +5.0 V ±10%, AV SS = V SS = 0.0 V , T A = –40°C to +85°C)* :t XCYL is the oscillation cycle (1/F C ) to input to the X0 pin.(2)Power-on Reset(AV SS = V SS = 0.0 V , T A = –40°C to +85°C)Note:Make sure that power supply rises within the selected oscillation stabilization time.If power supply voltage needs to be varied in the course of operation, a smooth voltage rise is recommended.ParameterSymbol ConditionValue Unit RemarksMin.Max.RST “L” pulse widtht ZLZH—16 t XCYL *—nsParameterSymbol ConditionValue Unit RemarksMin.Max.Power supply rising time t R ——50ms Power-on reset function only Power supply cut-off timet OFF1—msDue to repeated operations(3)Clock Timing(AV SS = V SS = 0.0 V , T A = –40°C to +85°C)(4)Instruction CycleParameterSymbol Pin name ConditionValue Unit RemarksMin.Max.Clock frequency F C X0, X1—110MHz Clock cycle time t XCYL 1001000ns Input clock pulse widthP WH P WLX020—nsExternal clock Input clock rising/falling timet CRt CF—10nsExternal clockParameterSymbol Value (typical)Unit RemarksInstruction cycle(minimum execution time)t inst4/F Cµst inst = 0.4 µs when operating at F C = 10 MHz(5)Clock Output Timing(V CC = +5.0 V ±10%, AV SS = V SS = 0.0 V , T A = –40°C to +85°C)Parameter Symbol Pin nameCondition Value Unit Remarks Min.Max.Cycle time t CYCCLKLoad condition:50 pF200—ns t XCYL× 2 at 10 MHz oscillation CLK ↑ → CLK ↓t CHCL30100nsApprox. t CYC /2 at 10 MHz oscillation(6)Bus Read Timing(V CC = +5.0 V ±10%, F C = 10 MHz, AV SS = V SS = 0.0 V , T A = –40°C to +85°C)* :For information on t inst , see “(4) Instruction Cycle.”Parameter Symbol Pin nameConditionValue (10 MHz)Unit Remarks Min.Max.Valid address → RD ↓ timet AVRL RD, A15 to A08, AD7 to AD0Load condition:50 pF1/4 t inst * – 64 ns —ns RD pulse width t RLRH RD1/2 t inst * – 20 ns—ns Valid address → data read timet AVDV AD7 to AD0, A15 to A08—1/2t inst *ns Nowait RD ↓ → data read time t RLDV RD, AD7 to AD0—1/2 t inst * – 80 nsns No waitRD ↑ → data hold time t RHDX AD7 to AD0, RD—ns RD ↑ → ALE ↑ timet RHLH RD, ALE1/4 t inst * – 40 ns—ns RD ↑ → address invalid timet RHAX RD, A15 to A081/4 t inst * – 40 ns —ns RD ↓ → CLK ↑ time t RLCH RD, CLK 1/4 t inst * – 60 ns—ns CLK ↓ → RD ↑ time t CLRH 0—ns RD ↓ → BUFC ↓ time t RLBL RD, BUFC–5—ns BUFC ↑ → validaddress timet BHAVA15 to A08, AD7 to AD0, BUFC5—ns。

市售平板电脑规格对比

有 1*mini USB 802.11b/g 有 5小时
大唐T20 大唐铝合金 330g 7寸电阻 800X480 TCC8902 ARM 11 720MHz 256M DDR2 2G 最大32G TF卡有 1*mini USB 802.11b/g 有 3200mAh 7小时小时 android2.1 1080P 支持3G dungle 不支持
爱可视7 爱可视铝合金 388g 7寸电阻 800X480 RK2808 ARM 9 600MHz 128M SDRAM 8G 无 1*mini USB 802.11b/g 无 5小时 android1.5 720P 不支持不支持
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大唐T25 大唐工程塑料 230g 5寸电阻寸 800X480 TCC8902 ARM 11 720MHz 256M DDR2 2G 32G TF卡有 1*mini USB 1*USB 802.11b/g 有 2500mAh 6小时 android2.1 1080P 支持3G dungle 不支持可拆卸电池
蓝魔W9 蓝魔铝合金 300g 7寸电阻 800X480 RK2818 ARM 9 660MHz 256M DDR2 8G 最大32G TF卡有 1*mini USB 有 3750mAh 6+小时 android2.1 720P 支持3G dungle 不支持
智器T7 智器工程塑料 420g 7寸电阻 800X600 TCC8902 ARM 11 720MHz 256M DDR2 2G 最大32G SD卡有 1*mini USB 802.11b/g 无 4500mAh

SY8008 SY8009 datasheet 规格书

Applications Note: AN_SY8009High Efficiency 1.5MHz/1MHz, 1.5A/2A Synchronous Step Down Regulator Preliminary Spec General DescriptionThe SY8009A and SY8009B are high-efficiency , high frequency synchronous step-down DC-DC regulator ICs capable of delivering up to 1.5A/2A output currents. The SY8009 family operate over a wide input voltage range from 3V to 5.5V and integrate main switch and synchronous switch with very low RDS(ON) to minimize the conduction loss. Low output voltage ripple and small external inductor and capacitor sizes are achieved with greater than 1MHz switching frequency.Features• low Rds(on) for internal switches (top/bottom) SY8009A: 200mohm/150mohm, 1.5A, SOT23-5 SY8009B:150mohm/120mohm,2.0A, SSOT23-6 • 3-5.5V input voltage range • High switching frequency minimizes the external components SY8009A: 1.5MHz SY8009B: 1MHz • Internal softstart limits the inrush current • 100% dropout operation • Compact package: SOT23-5 and Super SOT23-6 are pin-compatible. Other packages are available upon requestsOrdering InformationSY8009□(□□ □ □ □□ □□)□ Temperature Code C: - 40°C~85°C Package Code: AA:SOT23-5 EB:SSOT23-6 Spec CodeApplications• • • • •LCD TV Set Top Box Net PC Mini-Notebook PC Access Point RouterTypical ApplicationsVININ EN LXL C1(opt.) R1VOUTCINFB GNDCOUT R2Figure 1Efficiency (%)Figure2Efficiency vs Load CurrentAN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only1AN_SY8009Pinout (top view)(SY8009A, SOT23-5)(SY8009B, SSOT23-6)Top Mark: ADxyz for SY8009A , ASxyz for SY8009B (Device code: AD for SY8009A and AS for SY8009B, x=year code, y=week code, z= lot number code) Pin Name EN GND LX IN FB Pin Number 1 2 3 4 6(SSOT23-6) Pin Description Enable control. Pull high to turn on. Do not float. Ground pin Inductor pin. Connect this pin to the switching node of inductor. Input pin. Decouple this pin to GND pin with at least 1uF ceramic cap. Output Feedback Pin. Connect this pin to the center point of the output resistor divider (as shown in Figure 1) to program the output voltage: Vout=0.6*(1+R1/R2).Absolute Maximum Ratings (Note 1)Supply Input Voltage ------------------------------------------------------------------------------------------ 6.0V Enable, FB Voltage--------------------------------------------------------------------------------------------- VIN + 0.6V Power Dissipation, PD @ TA = 25°C ，SOT23-5,SSOT23-6 --------------------------------------------- 0.4W Package Thermal Resistance (Note 2) SOT23-5,SSOT23-6, θ JA --------------------------------------------------------------------------- 250°C/W SOT23-5,SSOT23-6, θ JC ----------------------------------------------------------------------------130°C/W Junction Temperature Range ----------------------------------------- -----------------------------------------150°C Lead Temperature (Soldering, 10 sec.) ---------------------------------------------------------------------- 260°C Storage Temperature Range ---------------------------------------------------------------------------------- -65°C to 150°C ESD Susceptibility (Note 2) HBM (Human Body Mode) ----------------------------------------------------------------------------------- 2kV MM (Machine Mode) ------------------------------------------------------------------------------------------ 200VRecommended Operating Conditions (Note 3)Supply Input Voltage ------------------------------------------------------------------------------------------3V to 5.5V Junction Temperature Range -------------------------------------------------------------------------------- -40°C to 125°C Ambient Temperature Range -------------------------------------------------------------------------------- -40°C to 85°CAN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only2AN_SY8009Electrical Characteristics(VIN = 5V, VOUT = 2.5V, L = 2.2uH, COUT = 10uF, TA = 25°C, unless otherwise specified)Parameter Input Voltage Range Quiescent Current Shutdown Current Feedback Reference Voltage FB Input Current PFET RON NFET RON PFET Current Limit EN rising threshold EN falling threshold Input UVLO threshold UVLO hysteresis Oscillator Frequency Min ON Time Max Duty Cycle Thermal Shutdown TemperatureSymbol VIN IQ ISHDN VREF IFB RDS(ON),P RDS(ON),N ILIM VENH VENL VUVLO VHYS FOSCTest Conditions IOUT=0, VFB=VREF ⋅ 105% EN=0Min 3Typ 80 0.1 0.6Max 5.5 1 0.612 500.588 VFB=VIN SY8009A SY8009B SY8009A SY8009B SY8009A SY8009B -50Unit V µA µA V nA Ω Ω Ω Ω A A V V V V MHz MHz ns % °C0.2 0.15 0.15 0.12 1.8 2.5 1.5 0.4 1.8 0.1 1.5 1 50 100 160IOUT=200mA, SY8009A IOUT=500mA, SY8009BTSDNote 1: Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2: θ JA is measured in the natural convection at TA = 25°C on a low effective single layer thermal conductivity test board of JEDEC 51-3 thermal measurement standard. Pin 2 of SOT23-5/SSOT-23-5 packages is the case position for θ JC measurement. Note 3: The device is not guaranteed to function outside its operating conditions.AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only3AN_SY8009Typical Performance Characteristics(SY8009B)Efficiency vs Load Current Efficiency vs Load Current Efficiency vs Load CurrentOutput Ripple(Vin=5.0V, Vout=1.8V,Iload=0.5A)Output Ripple(Vin=5.0V, Vout=1.8V,Iload=1.5A)Output Ripple(Vin=5.0V, Vout=1.8V,Iload=2A)Startup(Vin=5.0V, Vout=1.8V,Iload=2A)Shutdown(Vin=5.0V, Vout=1.8V,Iload=2A)Short Protection/Current limit(Vin=5.0V, Vout=1.8V,open to short)AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only4AN_SY8009Soft Start(Vo) Soft Start(Lx) Load Transient(Vin=5.0VmVout=1.8V,Iload=0~1A)Load Transient(Vin=5.0V, Vout=1.8V,Iload=0.2~2A)Case Temperature vs Output Current Oscillator Frequency vs Vin(Vin=5V,Vo=1.8V,Ta=27℃)AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use OnlyTC(°C)5AN_SY8009OperationSY8009 is a synchronous buck regulator IC that integrates the PWM control, top and bottom switches on the same die to minimize the switching transition loss and conduction loss. With ultra low Rds(on) power switches and proprietary PWM control, this regulator IC can achieve the highest efficiency and the highest switch frequency simultaneously to minimize the external inductor and capacitor size, and thus achieving the minimum solution footprint.Applications InformationBecause of the high integration in the SY8009 IC, the application circuit based on this regulator IC is rather simple. Only input capacitor CIN, output capaictor COUT, output inductor L and feedback resistors (R1 and R2) need to be selected for the targeted applications specifications. Feedback resistor dividers R1 and R2: Choose R1 and R2 to program the proper output voltage. To minimize the power consumption under light loads, it is desirable to choose large resistance values for both R1 and R2. A value of between 10k and 200k is highly recommended for R2. If R2=100k is chosen, then R1 can be calculated to be:R1 =(VOUT − 0.6 V) ⋅ R2 0.6VInput capacitor CIN:With the maximum load current at 1.2A, the maximum ripple current through input capacitor is about 0.6Arms. A typical X7R or better grade ceramic capacitor with 6V rating and greater than 4.7uF capacitance can handle this ripple current well. To minimize the potential noise problem, place this ceramic capacitor really close to the IN and GND pins. Care should be taken to minimize the loop area formed by CIN, and IN/GND pins. Output capacitor COUT: The output capacitor is selected to handle the output ripple noise requirements. Both steady state ripple and transient requirements must be taken into consideration when selecting this capacitor. For the best performance, it is recommended to use X7R or better grade ceramic capacitor with 6V rating and greater than 4.7uF capacitance. Output inductor L: There are several considerations in choosing this inductor. 1) Choose the inductance to provide the desired ripple current. It is suggested to choose the ripple current to be about 40% of the maximum output current. The inductance is calculated as: VOUT (1 − VOUT/VIN,MAX ) L= FSW × IOUT,MAX × 40% where Fsw is the switching frequency and IOUT,MAX is the maximum load current. The SY8009 regulator IC is quite tolerant of different ripple current amplitude. Consequently, the final choice of inductance can be slightly off the calculation value without significantly impacting the performance. 2) The saturation current rating of the inductor must be selected to be greater than the peak inductor current under full load conditions. VOUT(1-VOUT/VIN,MAX) ISAT, MIN > IOUT, MAX + 2 ⋅ FSW ⋅ L 3) The DCR of the inductor and the core loss at the switching frequency must be low enough to achieve the desired efficiency requirement. It is desirable to choose an inductor with DCR<50mohm to achieve a good overall efficiency. Layout Design: The layout design of SY8009 regulator is relatively simple. For the best efficiency and minimum noise problems, we should place the following components close to the IC: CIN, L, R1 and R2. 1) It is desirable to maximize the PCB copper area connecting to GND pin to achieve the best thermal and noise performance. If the board space allowed, a ground plane is highly desirable.AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only6AN_SY80092) CIN must be close to Pins IN and GND. The loop area formed by CIN and GND must be minimized. 3) The PCB copper area associated with LX pin must be minimized to avoid the potential noise problem. 4) The components R1 and R2, and the trace connecting to the FB pin must NOT be adjacent to the LX net on the PCB layout to avoid the noise problem. 5) If the system chip interfacing with the EN pin has a high impedance state at shutdown mode and the IN pin is connected directly to a power source such as a LiIon battery, it is desirable to add a pull down 1Mohm resistor between the EN and GND pins to prevent the noise from falsely turning on the regulator at shutdown mode. Load Transient Considerations: The SY8009 regulator IC integrates the compensation components to achieve good stability and fast transient responses. In some applications, adding a 22pF ceramic cap in parallel with R1 may further speed up the load transient responses and is thus recommended for applications with large load transient step requirements.AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only7AN_SY8009SOT23-5 Package outline & PCB layout design0.552.80 - 3.102.400.95 TYP0.802.70 - 3.000.30 - 0.50Recommended Pad Layout0.25 REF0.1 - 0.151.0 - 1.30.95 TYP0.3 - 0.61.90 TYPNotes: All dimensions are in millimeters. All dimensions don’t include mold flash & metal burr.AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only0.01 - 0.11.50 - 1.708AN_SY8009SSOT23-6 Package outline & PCB layout design1.901.002.30 - 2.500.950.600.25 - 0.40Recommended Pad Layout2.95 - 3.102.50 - 3.000.95 TYP 0.01 - 0.102.400.10 - 0.200.30 - 0.60Notes: All dimensions are in millimeters. All dimensions don’t include mold flash & metal burr.AN_SY8009 Rev. 0.2Silergy Corp. Confidential- Prepared for Customer Use Only0.90 - 1.009。

DMP3098L-7;中文规格书,Datasheet资料

Product SummaryV (BR)DSSR DS(on) max I D T A = 25°C -30V70m Ω@ V GS = -10V -3.8A 120m Ω@ V GS =-4.5V-3.0ADescription and ApplicationsThis new generation MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switchingperformance, making it ideal for high efficiency power management applications. • Power management functions • Analog Switch • Load Switch • Boost SwitchFeatures and Benefits• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound.UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate)Ordering Information (Note 3)Part Number Case Packaging DMP3098L -7SOT23 3000/Tape & ReelNotes: 1. No purposefully added lead.2. Diodes Inc.'s "Green" policy can be found on our website at .3. For packaging details, go to our website at .Marking InformationDate Code KeyYear 2008 2009 2010 2011 2012 2013 2014 2015Code V W X Y Z A B CMonth JanFeb Mar Apr May Jun JulAug Sep OctNov Dec Code 1 2 3 4 5 6 7 8 9 O NDTop View Pin Configuration SOT-23 DMB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) DMB Y MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsDrain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS±20 V Drain Current (Note 4) V GS = -10VSteady State T A = 25°C T A = 70°CI D -3.8-2.9 A Pulsed Drain Current (Note 5) I DM-11 AThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsTotal Power Dissipation (Note 4) P D1.08 W Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4) R θJA115 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS (Note 6)Drain-Source Breakdown Voltage BV DSS-30 ⎯ ⎯ V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current I DSS ⎯ ⎯ -800 nA V DS = -30V, V GS = 0VGate-Source Leakage I GSS⎯ ⎯ ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6)Gate Threshold Voltage V GS(th)-1.0 -1.8 -2.1 V V DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) ⎯56 98 70120 m Ω V GS = -10V, I D = -3.8A V GS = -4.5V, I D = -3.0A Forward Transfer Admittance |Y fs |⎯ 3.6 ⎯ S V DS = -5V, I D = -2.7A Diode Forward Voltage (Note 6) V SD ⎯ ⎯ -1.26 V V GS = 0V, I S = -2.7A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss ⎯ 336 1008 pF V DS = -25V, V GS = 0V, f = 1.0MHz Output Capacitance C oss ⎯ 70 210 pF Reverse Transfer Capacitance C rss ⎯ 49 147 pF Gate Resistance R G ⎯ 4.6 ⎯ Ω V GS = 0V V DS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 7)Total Gate Charge Q g⎯4.0 8.0 nCV DS = -15V, V GS = -4.5V,I D = -3.8A ⎯ 7.8 ⎯ V DS = -15V, V GS = -10V,I D = -3.8AGate-Source Charge Q gs ⎯ 1.0 ⎯Gate-Drain Charge Q gd ⎯ 2.5 ⎯ Turn-On Delay Time t d(on) ⎯6.0 12.0 nsV DS = -15V, V GS = -10V,I D = -1A, R G = 6.0Ω Rise Time t r ⎯ 5.0 10.0 Turn-Off Delay Time t d(off) ⎯ 17.6 35.2 Fall Timet f ⎯ 9.5 19.0Notes:4. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec.5. Pulse width ≤10μS, Duty Cycle ≤1%.6. Short duration pulse test used to minimize self-heating effect.7. Guaranteed by design. Not subject to production testing.-I , D R A I N C U R R E N T (A )D Fig. 1 Typical Output Characteristics-V , DRAIN-SOURCE VOLTAGE (V)DSFig. 2 Typical Transfer Characteristics-V , GATE SOURCE VOLTAGE (V)GS -I , D R A I N C U R R E N T (A )D 0.01R , S T A T I C D R A I N -S O U R C EO N -R E S I S T A N C E ()D S (O N )ΩFig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage-I , DRAIN CURRENT (A)D0.100246810R , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E ()D S (O N )ΩFig. 4 Typical On-Resistance vs. Drain Current and T emperature-I , DRAIN CURRENT (A)DFig. 5 On-Resistance Variation with TemperatureT , AMBIENT TEMPERATURE (°C)A R , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )D S (O N )C , C A P A C I T A N C E (p F )Fig. 6 Typical Capacitance-V , DRAIN-SOURCE VOLTAGE (V)DS-V , G A T E T H R E S H O L D V O L T A G E (V )G S (T H )Fig. 7 Gate Threshold Variation vs. Ambient T emperatureT , AMBIENT TEMPERATURE (°C)A246810-V , SOURCE-DRAIN VOLTAGE (V)SD -I , S O U R C E C U R R E N T (A )S Fig. 8 Diode Forward Voltage vs. CurrentFig. 9 Safe Operation AreaV , DRAIN-SOURCE VOLTAGE (V)DS I , D R A I N C U R R E N T (A )DPackage Outline DimensionsSOT23Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K0.903 1.10 L0.45 0.61 M 0.085 0.180α0° 8°Suggested Pad LayoutIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes IncorporatedDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35X EYCZ分销商库存信息: DIODESDMP3098L-7。

NITON XLt 800说明书要点

NITON XLp 800系列合金分析仪用户指南版本：4.2美国热电公司便携式元素分析部门900 Middlesex Turnpike，Building 8Billerica，Massachusetts 01821 USA语音电话：（800）875－1578 • ＋1 （978）670－7460 • 传真：＋1 （978）670－7430Email：xrf@·web：http：／／美国热电公司版权所有©1993，1994，1995，1996，1997，1998，1999，2000，2001，2002，2003，2004.保留所有权利如未提前获得美国热电公司允许，不得以任何形式或方式（电子、机械、影印、录音等）进行复制，在检索系统中阅读、存储、或传播本资料的任何内容。

NITON® XLp™，800 Series™，以及SpectraView™ 为美国热电公司的商标。

本用户指南中的信息仅供参考，如有更改，恕不另行通知，且不应解释为美国热电公司的承诺。

美国热电公司对于本手册的任何错误、误差或遗漏之处概不负责。

XLp™ 800 系列合金分析仪用户指南XLp™ 800 系列合金分析仪美利坚合众国制造注册：美国热电公司制造XLp™ 800系列合金分析仪已获得马萨诸塞州联邦授权，并符合放射性物质许可55－0238警告：在未首先阅读并理解整个用户指南资料之前，不得尝试使用该仪器！您的NITON XRF分析仪 (I)拆箱以及组装您的NITON XLp XRF分析仪 (i)NITON XLp XRF 分析仪综述 (ii)控制面板 (ii)仪器启动 (iv)屏幕对比度 (vi)辐射安全 (1)以毫雷姆为单位的典型辐射剂量（NCRP，1987） (3)如何使用您的NITON XLp仪器 (5)挡板安全 (7)监控您的辐射暴露 (8)美国境内的仪器遗失或损坏程序 (11)美国境外的仪器遗失或损坏程序 (12)辐射数据表 (13)菜单系统 (1)主菜单 (2)模式菜单 (4)应用程序菜单 (6)数据菜单 (9)数据菜单－第二页 (13)查看数据库菜单 (14)通用设置菜单 (15)标定菜单 (17)删除菜单 (19)串行输出菜单 (21)设置协议菜单 (22)硬件设置菜单 (24)辐射源菜单 (26)辐射源时间菜单 (27)辐射源匹配数字菜单 (29)合金测试 (1)合金菜单 (2)化学模式菜单 (4)特征ID模式菜单 (6)存储特征菜单 (7)SuperChem菜单 (9)超级识别菜单 (15)所有合金测试菜单 (20)Cu／Zn／Pb测试菜单 (23)Ta／Hf／Re 测试菜单 (25)匹配特征测试菜单 (27)分析金属合金样品............................................... . (29)数据输入屏幕............................................................................ .31设置自定义条形码................................................................ .33浏览数据输入屏幕.......................................................... .34虚拟键盘............................................................................. .35结果屏幕....................................................... (36)匹配数字.................................................................................... .38铝合金分析以及分类................................................................ .39PB涂料模式 (1)使用Pb涂料模式 (1)细薄样品测试模式 (1)使用细薄样品测试模式 (1)大块样品测试模式 (1)使用大块样品测试模式 (1)贵重金属模式 (1)使用贵重金属模式 (1)例行维护指南 (1)电池组以及电池充电器 (1)维护、清洁以及维修 (6)存储以及运输您的NITON XLp 800 系列分析仪 (9)附录一 (I)X射线发射能量，按照元素原子序数顺序排列... .. (i)附录二 (III)X射线发射能量，按照元素字母表顺序排列............ . (iii)附录三 (V)SpectraView (v)附录四 (VIII)警告摘要 (viii)附录五 (XI)注意事项摘要............................................................................. (xi)附录六 (XIV)焊接护罩附件工具箱................................................................. (xiv)附录七 (XX)附录八 (XXI)术语表 (XXIII)NITON XLp 800系列合金分析仪用户指南简介－1简介您的NITON XRF 分析仪拆箱以及组装您的NITON XLP XRF 分析仪·检查装运箱是否存在损坏迹象，例如包装破碎或水渍损失。

6639S-1-103;6639S-1-102;6639S-1-104;6639S-1-202;6639S-1-203;中文规格书,Datasheet资料

22.23 (.875) DIA.
3.18 (.125)
6639
11.25 .38 (.443 .015)
1.57 (.062)
Байду номын сангаас
22.23 (.875) DIA.
.51 (.020) REF
19.81 (.780) DIA.
12.70 .79 (.500 .031)
10.317+.000/-.051 (.4062+.000/-.002)
DIA.
6.342+.000/-.008
(.2497+.0000/-.0003) DIA. SHAFT .25
45 5 (.010) CHAMFER 1.19 1.60
SLOT (.047) X (.063)
Mechanical Characteristics1
Mechanical Angle ..........................................................Continuous, Stops (340 ° +8 °, -0 °) available Torque (Starting & Running)2 ...................................................................0.40 N-cm (0.5 oz.-in.) max.
Sea Level......................................... 750 VAC minimum .....................750 VAC minimum Power Rating (Voltage Limited By Power Dissipation or 300 VAC, Whichever is Less)

液晶驱动板规格书产品名称PCB-800099驱动板

液晶驱动板规格书产品名称 PCB-800099驱动板文件编号 TYT20120909供应商：深圳市天宇朗通科技有限公司地址：深圳福田区振华路高科德电子市场42073联系人张先生客户名称：客户地址：联系人文件级别公共文件发布日期2012-09-091.产品说明：本驱动板可以1，1路VGA信号输入2，2路A V信号输入3，1路HDMI信号输入,且本IC支持的是HDMI1.14，1路倒车信号输入5，支持宽电压输入，并可以在，5V-24V之间正常工作，6，标准背光6PIN，接口，可外接高压板7，驱动板集成液晶屏LED背光驱动板路，8，标准LVDS信号输出，可支持单6，单8，双6，双8等标准的LVDS信号的液晶屏,但只支持屏供电为3.3V的液晶屏9，标准按键板接口，并支持双色LED指示灯显示10，支持TTL信号输出，可支持AT070TN92,AT065TN14AT080TN52AT090TN12AT090TN10AT070TN90AT070TN93AT070TN94等，通用50PIN接口的TTL液晶屏11，配合本公司编号为PCB800100的液晶屏转接板，可支持如下液晶屏EJ070NA01-1024X600分辨率EJ080NA04B-1024X768分辨率ZJ070NA01,型号的通用40PIN高分液晶屏12,配合PCB800100,还可以支持4。

3，5，6，7寸，40PIN通用的屏，定义参见AT0543TN24V,113,本驱动板最大输出显示分辨率为，1920X1080超过,1440X900显示分辨率时，需要视IC的工作情况，增加散热片，以降低IC的工作温度）14本IC，VGA部分可以直接输入YPBPR信号，通过程序实现15，本驱动板可增加遥控功能（需要通过软件实现）16，本驱动板可以自动检测，并显示相关的输入电压信息-----注，此功能为定制功能，需要联系我公司技术部17，本驱动板可以支持自动检测信号开关机功能，--此功能为定制功能18，本驱动板可以加BNC接口---需要定制19，支持倒车控制，并显示A V2上，倒车电压支持50V以内的电压输入20，本驱动板定位孔为四个，21，如果特殊要求，我公司可以提供其它的定制服务22，客户需要改程序，需要连接我公司，购买相关的程序下载板，23，利用本公司的USB接口程序下载板，可以自行在BIN代码上添加LOGO6产品尺寸图7接口功能详细说明7.1CON1,接口定义8 运输，存储，使用要求1，不要重压和弯折变形 2，防静电和水3，相对湿度，小于80% 4, 使用温度 -1-度--+60度 5，使用湿度0-+40度。

TPESD9B3.3ST5G 8000型 7寸绿色塑料保护电路板说明书

Applications
Mobile Phones and Accessories
Ordering Information
C Part Number
Qty per Reel
I TPESD9B3.3ST5G
8000
Reel Size 7”
Battery Protection USB VBus Power Line Protection Hand Held Portable Applications
TPESD9B3.3ST5G
1-Line Bi-directional Diode
Features
80W peak pulse power (8/20 μs) Protects one data or power line Operating voltage: ±3.3V Ultra low clamping voltage Complies with following standards:
TECHPUBL Dimensions and Pin Configuration
1
Absolute Maximum Ratings (Tamb=25°C unless otherwise specified)
TPESD9B3.3ST5G
1-Line Bi-directional Diode

Package：SOD-923(0402) Ultra low leakage: nA level
Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020

SN74AHCT08MPWREP,规格书,Datasheet 资料

PACKAGING INFORMATIONOrderable Device Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)SN74AHCT08MDREP ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AHCT08MPWREPACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM V62/03654-01XE ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM V62/03654-01YEACTIVESOICD142500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has takenand continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF SN74AHCT08-EP :•Catalog:SN74AHCT08•Military:SN54AHCT08NOTE:Qualified Version Definitions:•Catalog-TI's standard catalog product •Military -QML certified for Military and Defense ApplicationsPACKAGE OPTION ADDENDUM18-Sep-2008TAPE AND REEL INFORMATION*All dimensions are nominalDevicePackage Type Package Drawing Pins SPQReel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant SN74AHCT08MDREP SOIC D 142500330.016.4 6.59.0 2.18.016.0Q1SN74AHCT08MPWREPTSSOPPW142000330.012.46.95.61.68.012.0Q1*All dimensions are nominalDevice Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) SN74AHCT08MDREP SOIC D142500333.2345.928.6SN74AHCT08MPWREP TSSOP PW142000367.0367.035.0IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,enhancements,improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B.Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All semiconductor products(also referred to herein as“components”)are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale,in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by applicable law,testing of all parameters of each component is not necessarily performed.TI assumes no liability for applications assistance or the design of Buyers’products.Buyers are responsible for their products and applications using TI components.To minimize the risks associated with Buyers’products and applications,Buyers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any patent right,copyright,mask work right,or other intellectual property right relating to any combination,machine,or process in which TI components or services are rmation published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal,regulatory and safety-related requirements concerning its products,and any use of TI components in its applications,notwithstanding any applications-related information or support that may be provided by TI.Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures,monitor failures and their consequences,lessen the likelihood of failures that might cause harm and take appropriate remedial actions.Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications.In some cases,TI components may be promoted specifically to facilitate safety-related applications.With such components,TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements.Nonetheless,such components are subject to these terms.No TI components are authorized for use in FDA Class III(or similar life-critical medical equipment)unless authorized officers of the parties have executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or“enhanced plastic”are designed and intended for use in military/aerospace applications or environments.Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk,and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use.TI has specifically designated certain components which meet ISO/TS16949requirements,mainly for automotive ponents which have not been so designated are neither designed nor intended for automotive use;and TI will not be responsible for any failure of such components to meet such requirements.Products ApplicationsAudio /audio Automotive and Transportation /automotiveAmplifiers Communications and Telecom /communicationsData Converters Computers and Peripherals /computersDLP®Products Consumer Electronics /consumer-appsDSP Energy and Lighting /energyClocks and Timers /clocks Industrial /industrialInterface Medical /medicalLogic Security /securityPower Mgmt Space,Avionics and Defense /space-avionics-defense Microcontrollers Video and Imaging /videoRFID OMAP Mobile Processors /omap TI E2E Community Wireless Connectivity /wirelessconnectivityMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2012,Texas Instruments Incorporated。

DMC2004VK-7;中文规格书,Datasheet资料

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTORFeatures• Low On-Resistance • Low Gate Threshold Voltage V GS(th) <1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • ESD Protected Gate • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-563 • Case Material: Molded Plastic, “Green” MoldingCompound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: 0.006 grams (approximate)Ordering Information (Note 4)Part Number Case Packaging DMC2004VK-7SOT-563 3000/Tape & ReelNotes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2007 200820092010 20112012Code U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N De3SOT-563TOP VIEWInternal SchematicTOP VIEW BOTTOM VIEWESD protectedQ 2CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September GreenMaximum Ratings N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source Voltage V DSS20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D670480 mAMaximum Ratings P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source VoltageV DSS-20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D-530-380 mAThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 5) P D400 mW Thermal Resistance, Junction to Ambient (Note 5) R θJA 312.5 °C/W Operating and Storage Temperature RangeT j , T STG-65 to +150 °CNote:5. Device mounted on FR-4 PCB.Electrical Characteristics N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯V V GS = 0V, I D = 10µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ 1.0 µAV DS = 16V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) 0.5 ⎯ 1.0 V V DS = V GS , I D = 250µAStatic Drain-Source On-Resistance R DS (ON)⎯ ⎯ ⎯ 0.4 0.5 0.7 0.550.70 0.90 Ω V GS = 4.5V, I D = 540mA V GS = 2.5V, I D = 500mA V GS = 1.8V, I D = 350mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD 0.5 ⎯ 1.2 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 150 pF V DS = 16V, V GS = 0Vf = 1.0MHz Output CapacitanceC oss ⎯ ⎯ 25 pF Reverse Transfer Capacitance C rss ⎯ ⎯ 20 pF Reverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Electrical Characteristics P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯V V GS = 0V, I D = -250µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ -1.0 µAV DS = -20V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) -0.5 ⎯ -1.0 V V DS = V GS , I D = -250µAStatic Drain-Source On-Resistance R DS (ON)⎯ 0.7 1.1 1.7 0.91.42.0 Ω V GS = -4.5V, I D = -430mA V GS = -2.5V, I D = -300mA V GS = -1.8V, I D = -150mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD -0.5 ⎯ -1.2 V V GS = 0V, I S = -115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 175 pFV DS = -16V, V GS = 0Vf = 1.0MHzOutput CapacitanceC oss ⎯ ⎯ 30 pFReverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Q 1, N-CHANNELFig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )Fig. 2 Typical Transfer CharacteristicsGS I , D R A I N C U R R E N T (A )D Fig. 3 Gate Threshold Voltage vs. Ambient TemperatureA V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)I , DRAIN CURRENT (A)Fig. 4 Static Drain-Source On-Resistancevs. Drain CurrentDI , DRAIN CURRENT (A)Fig. 5 Static Drain-Source On-Resistancevs. Drain CurrentD I , DRAIN-SOURCE CURRENT (A)Fig. 6 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 1, N-CHANNEL (cont.)T , AMBIENT TEMPERATURE (°C)Fig. 7 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 9 Forward Transfer Admittance vs. Drain Current DV , DRAIN-SOURCE VOLTAGE (V)Fig. 10 Typical CapacitanceDSQ 2, P-CHANNEL-V , DRAIN SOURCE VOLTAGE (V)Fig. 11 Typical Output CharacteristicsDS -I , D R A I N C U R R E N T (A )DFig. 12 Typical Transfer CharacteristicsGS -I , D R A I N C U R R E N T (A )D Fig. 13 Gate Threshold Voltage vs. Ambient TemperatureA -V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)-I , DRAIN-SOURCE CURRENT (A)Fig. 14 Static Drain-Source On-Resistance vs. Drain CurrentD -I , DRAIN-SOURCE CURRENT (A)Fig. 15 Static Drain-Source On-Resistance vs.Drain CurrentDFig. 16 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 2, P-CHANNEL (cont.)Fig. 17 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 19 Forward Transfer Admittance vs. Drain CurrentD -V , DRAIN-SOURCE VOLTAGE (V)Fig. 20 Typical CapacitanceDSPackage Outline DimensionsSuggested Pad LayoutSOT563Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.100.30 0.20 M 0.10 0.18 0.11 All Dimensions in mmDimensions Value (in mm)Z 2.2 G 1.2 X 0.375 Y 0.5C11.7 C20.5 XZYC1C2C2GIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESDMC2004VK-7。

PD100MF0MP;PD100MF0MP1;中文规格书,Datasheet资料

2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
ommends checking the process to make sure these parameters are not exceeded; exceeding these parameters can cause substrate bending or other mechanical stresses leading to debonding of the internal gold wires, or other similar failure modes. 3. If using an infrared lamp to preheat the parts, such heat sources may cause localized high temperatures in the part's resin. Be sure to keep the temperature profile within the guidelines shown in Fig. 4. 4. If hand soldering, use temperatures ≤ 260° for ≤ 3 seconds. Do not dip-solder or VPS-solder this part. 5. Do not subject the package to excessive mechanical force during soldering as it may cause deformation or defects in plated connections. Internal connections may be severed due to mechanical force placed on the package due to the PCB flexing during the soldering process.

STE800P资料

STE800P1.0DESCRIPTIONThe STE800P is a high performance Octal Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX/ FX applications.It was designed with advanced CMOS technology to provide a RMII/SMII for easy attachment to 10/100Media Access Controllers (MAC) and a physical me-dia interface for 100BASE-TX / FX of IEEE802.3u and 10BASE-T of IEEE802.3.The STE800P supports both half-duplex and full-du-plex operation, at 10 and 100 Mbps operation. Its op-erating mode can be set using auto-negotiation,parallel detection or manual control. It also allows for the support of auto-negotiation functions for speed and duplex detection. 2.0FEATURE 2.1Industry standard• IEEE802.3u 100BASE-TX / F X a nd I EEE802.3 10BASE-T compliant• Support for IEEE802.3x flow control • IEEE802.3u Auto-Negotiation support • RMII/SMII interface• Low power, single supply 3.3V CMOS • Shared MII management interface up to 25MbpsPQFP208ORDERING NUMBER: STE800PPRODUCT PREVIEW10/100 BASE-TX/FX 8 PORT TRANSCEIVERFigure 1. BLOCK DIAGRAM FOR 1 PORTLEDSTRANS-4B/ 5BBinary to MLT3Parallel To Serial MITTER 10/100NRZ To Manchester Encoder Link Pulse GeneratorNRZ To NRZI Encoder10 TX FilterTXPTXNTX Channel 100Mb/s HW SMII_ENMDIO MDIC TXD(1:0)TX_ER TX_ENCRS_DV REFCLKRX_ER RXD(1:0)EncoderScrambler10Mb/sR M I I / S M I I I n t e r f a c e / C o n t r o l l e rRXNRXPRX Channel RECEIVER10/100Link Pulse Detector10 RX Filter Clk RecoverySMART SquelchNRZ To Manchester Decoder 10Mb/sDescrambler Code Align100Mb/s 4B/ 5BSerial ToParallel NRZI To NRZ DecoderAdaptive Equalization Baseline WanderBinary To MLT3 Decoder Clock RecoveryHW Config Power DownPinsConfig ClockGenerationLoopbackREGISTERSAutoNegotiationSystem Clock2.2Physical Layer• Integrates the whole Physical layer functions for• 100BASE-TX full or half duplex Ethernet on CAT 5 twisted pair cable• 100BASE-FX full or half duplex transmission over fiber optic cabling• 10BASE-T full or half duplex Ethernet on CAT 3, 4 or 5 cable.• Auto-negotiation(NWAY) function of full/half duplex operation for both 10 and 100 Mbps • MLT-3 transceiver with DC restoration for Base-line wander compensation• Transmit wave-shaper, receive filters, and adaptive equalizer• Loop-back modes for diagnostic• In Stream Cipher Scrambler/ De-scrambler• 4B/5B, MLT3, NRZI and Manchester encoding/decoding• 125 MHz clock generator and timing recovery• Supports external transmit transformer with turn ratio 1.41 : 1• Supports external receive transformer with turn ratio 1:12.3LED Display• Serial LED status pins• Programmable parallel LED pins2.4Miscellaneous• Standard 208-pin PQFP package pinoutFigure 2. System Diagram of the STE800P ApplicationOCTAL ETHERNET MAC CONTROLLERSTE800P8 PORT 10/100MBPS PHYMAGNETICSRJ45MAGNETICSRJ45Port 1 Port 83.0 PACKAGEInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics® 2001 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain- Sweden - Switzerland - United Kingdom - U.S.A.PACKAGE TYPE: PQFP 208 / BODY 28X28X3.49mmREF Dimensions mmDimensions inch MIN.TYP.MAX.MIN.TYP.MAXA 4.100.161A10.250.010A2 3.40 3.203.600.1340.1260.142B 0.170.270.0070.011C 0.090.200.0030.008D 30.60 1.205D128.00 1.102D325.50 1.004e 0.500.020E 30.60 1.205E128.00 1.102E325.50 1.004L 0.450.600.750.0180.0240.029L1 1.300.51K0 deg. (min), 3.5 deg. (typ.), 7 deg.(max)。

FDS8958B;中文规格书,Datasheet资料

FDS8958B Dual N & P-Channel PowerTrench ® MOSFETPin 1SO-8D1D1D2D2S2S1G1MOSFET Maximum Ratings T C = 25 °C unless otherwise noted® MOSFETDynamic CharacteristicsSwitching CharacteristicsDS(on)V GS = -10 V, I D = -4.5 A V GS = -4.5 V, I D = -3.3 AV GS = -10 V, I D = -4.5 A, T J = 125 °C Q2386053518072g FSForward Transconductance V DD = 5 V, I D = 6.4 A V DD = -5 V, I D = -4.5 AQ1Q22010SC iss Input Capacitance Q1V DS = 15 V, V GS = 0 V, f = 1 MHZ Q2V DS = -15 V, V GS = 0 V, f = 1 MHZQ1Q2 405570540760pF C oss Output CapacitanceQ1Q2 75115100155pF C rss Reverse Transfer Capacitance Q1Q25510080150pF R gGate ResistanceQ1Q22.44.4Ωt d(on)Turn-On Delay Time Q1V DD = 15 V, I D = 6.4 A, V GS = 10 V, R GEN = 6 ΩQ2V DD = -15 V, I D = -4.5 A, V GS = -10 V, R GEN = 6 ΩQ1Q2 4.36.01012ns t r Rise TimeQ1Q2 2.06.01012ns t d(off)Turn-Off Delay Time Q1Q2 12172230ns t f Fall TimeQ1Q2 2.07.01014ns Q g(TOT)Total Gate Charge V GS = 10 V V GS = -10 V Q1V DD = 15 V, I D = 6.4 A Q2V DD = -15 V, I D = -4.5 AQ1Q28.3141219nC Q g(TOT)Total Gate Charge V GS = 4.5 V V GS = -4.5 VQ1Q2 4.17.0 5.89.6nC Q gs Gate to Source Charge Q1Q2 1.31.9nC Q gdGate to Drain “Miller” ChargeQ1Q21.73.6nC®MOSFET2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.4. UIL condition: Starting T J = 25 °C, L = 1 mH, I AS = 6 A, V DD = 27 V, V GS = 10 V . (Q1)Starting T J = 25 °C, L = 1 mH, I AS = -4 A, V DD = -27 V, V GS = -10 V. (Q2)MOSFETMOSFETMOSFETMOSFETMOSFETMOSFETFDS8958B Dual N & P-Channel PowerTrench ® MOSFETANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support .Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONS Definition of Terms* EZSWITCH™ and FlashWriter ® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.Build it Now™CorePLUS™CorePOWER™CROSSVOLT ™CTL™Current Transfer Logic™EcoSPARK ®EfficentMax™EZSWITCH™ *™Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FlashWriter ® *FPS™F-PFS™FRFET ®Global Power Resource SM Green FPS™Green FPS™ e-Series™GTO™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™MotionMax™Motion-SPM™OPTOLOGIC ®OPTOPLANAR ®®PDP SPM™Power-SPM™PowerTrench ®PowerXS™Programmable Active Droop™QFET ®QS™Quiet Series™RapidConfigure™™Saving our world, 1mW /W /kW at a time™SmartMax™SMART START™SPM®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS™SyncFET™®The Power Franchise ®TinyBoost™TinyBuck™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC ®Ultra FRFET™UniFET™VCX™VisualMax™XS™®Datasheet Identification Product Status DefinitionAdvance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Datasheet contains preliminary data; supplementary data will be published at a later date.分销商库存信息: FAIRCHILDFDS8958B。

TIM-800系列热导电极性胶说明书

Thermally Conductive Epoxy AdhesivesProduct Description:TIM-800 series are thermally conductive, electrically insulating epoxies engineered with highly conductive ceramic fillers and non-silicone resins. They are designed for the demanding needs of die-attach heat sink bonding and surface mount applications. Rapid heat transfer properties eliminate hot spots and the low epoxy shrinkage factor minimizes the risk of damage to fragile components, resulting in increased operating efficiencies. Available in one part, two parts, heat curable and room temperature cure systems.Typical Applications: Fabricating heat sink, bonding semiconductors, substrate attach, lid seal, SMD attach, stacking components and die attach applications.One Part Thermally Conductive Epoxy AdhesivesTwo Parts Thermally Conductive Epoxy AdhesivesThermally Conductive Potting Compounds(TIM-PC Series)Product Description: TIM-PC series are pourable, filled Silicone Free epoxy resin or silicone resin systems offering excellent heat transfer, high voltage insulation, low exothermic and minimum shrinkage. These compounds transfer heat rapidly, thereby eliminating hot spots and increasing the operating efficiency of most encapsulated devices. The low shrinkage design feature minimizes risk of damage to fragile components.Typical ApplicationsThese products are designed for protecting components in applications such as densely packaged power supplies and heatgenerating components, integrated circuits, power and operational amplifiers, transformers and many types of semiconductors Epoxy-Resin based (Silicone Free) Potting CompoundsSilicone Potting CompoundsThermally Conductive, two parts, low viscosity potting compound that cures at room temperature to a soft pliable rubber. Will cure in deep sections. Designed to achieve primerless adhesion to many substrates, including metals, plastics, and ceramics. The excellent electrical properties make it a candidate material for both high and low voltage electrical assemblies.Typical Applications:Potting and encapsulating of:Equipment modules, Power supplies, relays and amplifiers, Transformers, coils and ferrite coresFiber optic wave guide coatingsEncapsulation of circuit boards。

MB87P2020中文资料

Page 2
元器件交易网
Table of Contents
Table of Contents
PART A - Lavender and Jasmine Overview
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PART B - Functional Descriptions B-1 Clock Unit (CU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
1 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
1.1 Application overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 1.2 Jasmine/Lavender Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2 APLL Speciﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

SSM6N7002BFU,LF;中文规格书,Datasheet资料

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)SSM6N7002BFUHigh-Speed Switching Applications Analog Switch Applications• Small package• Low ON-resistance : R DS(ON) = 3.3 Ω (max) (@V GS = 4.5 V): R DS(ON) = 2.6 Ω (max) (@V GS = 5 V): R DS(ON) = 2.1 Ω (max) (@V GS = 10 V)Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)Characteristics Symbol RatingUnitDrain-source voltage V DSS 60 V Gate-source voltage V GSS± 20VDC I D 200Drain currentPulse I DP 800mADrain power dissipation (Ta = 25°C) P D (Note 1)300 mWChannel temperature T ch 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing theToshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Note 1:Total rating, mounted on FR4 board2 × 6) Marking Equivalent Circuit (top view)Unit: mmWeight: 6.8 mg (typ.) 123Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)Characteristics Symbol Test Condition Min Typ Max UnitGate leakage currentI GSS V GS = ± 20 V, V DS = 0 V ⎯ ⎯ ±10μA V (BR) DSS I D =10 mA, V GS = 0 V 60 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSXI D = 10 mA, V GS = -10 V 45 ⎯⎯VDrain cutoff current I DSS V DS = 60 V, V GS = 0 V ⎯ ⎯ 1 μA Gate threshold voltage V th V DS = 10 V, I D = 0.25 mA 1.5 ⎯ 3.1 VForward transfer admittance ⎪Y fs ⎪ V DS = 10 V, I D = 200 mA (Note 2)225⎯⎯ mSI D = 500 mA, V GS = 10 V (Note 2)⎯ 1.62 2.1 I D = 100 mA, V GS = 5 V (Note 2)⎯ 1.90 2.6 Drain-source ON-resistance R DS (ON) I D = 100 mA, V GS = 4.5 V(Note 2)⎯ 2.10 3.3 Ω Input capacitanceC iss ⎯ 17.0 ⎯ Reverse transfer capacitance C rss ⎯ 1.9 ⎯ Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz ⎯ 3.6 ⎯ pFTurn-on delay time td (on) ⎯ 3.3 6.6Switching timeTurn-off delay timetd (off) V DD = 30 V , I D = 200 mA ,V GS = 0 to 10 V ⎯ 14.5 40 nsDrain-source forward voltageV DSFI D = -200 mA, V GS = 0 V(Note 2)⎯ -0.84 -1.2V Note2: Pulse testSwitching Time Test CircuitPrecautionLet V th be the voltage applied between gate and source that causes the drain current (I D ) to be low (0.25 mA for the SSM6N7002BFU). Then, for normal switching operation, V GS(on) must be higher than V th, and V GS(off) must be lower than V th. This relationship can be expressed as: V GS(off) < V th < V GS(on). Take this into consideration when using the deviceHandling PrecautionWhen handling individual devices that are not yet mounted on a circuit board, make sure that the environment isprotected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.(c) V OUT(b) V IN(a) Test circuitV DD V V DD = 30 V Duty ≤ 1%V IN : t r , t f < 2 ns (Z out = 50 Ω) Common Source Ta = 25 °C10 μsAmbient temperature Ta (°C)R DS (ON) – TaD r a i n –s o u r c e O N -r e s i s t a n c e R D S (O N ) (Ω)−50 0 50 150100Ambient temperature Ta (°C)V th – TaG a t e t h r e s h o l d v o l t a g e V t h (V )3.0−2.01.0Gate–source voltage V GS (V)I D – V GSD r a i n c u r r e n t I D (m A )1000101000.110.015.04.02.03.0 1.0 Drain–source voltage V DS (V)I D – V DSD r a i n c u r r e n t I D (m A )0.4 0.8 1.2 2.01.6D r a i n –s o u r c e O N -r e s i s t a n c e R DS (O N ) (Ω)Gate–source voltage V GS (V)RDS (ON) – V GS25431R DS (ON) – I DDrain current I D (mA)D r a i n –s o u r c e O N -r e s i s t a n c e R D S (O N ) (Ω)Drain current I D (mA) F o r w a r d t r a n s f e r a d m i t t a n c e ⎪Y f s ⎪ (S )|Y| – I100010 1001 Drain current I D (mA)S w i t c h i n g t i m e t (n s )t – I111001000100 10001010D r a i n r e v e r s e c u r r e n t I D R (m A )Drain–source voltage V DS (V)I DR – V DS10006008000200-0.2 -0.6 -0.4 -1.0 -0.8 -1.2400Drain–source voltage V DS (V)C – VC a p a c i t a n c e C (p F )0.1110100P D * – TaAmbient temperature Ta (°C)D r a i n p o w e r d i s s i p a t i o n P D * (m W )*:Total RatingRESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) theinstructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.分销商库存信息: TOSHIBASSM6N7002BFU,LF。

800SP9B6M2QE;800SP9B5M2REC1BLK;800SP9B5M1QEC2RED;800SP9B10M61RE;中文规格书,Datasheet资料

1A @ 250 VAC 3A @ 120 VAC or 28 VDC
Life Expectancy:
50,000 cycles typical
Contact Resistance:
10mΩ max. typical @ 2-4 VDC 100mA for both silver and gold plated contacts
SEAL
E
HARDWARE
E = Epoxy
Sealed at Base of Terminal
H= Hardware
CAP
CAP COLOR
See Cap Options
*Note: C2 cap not available on B8 or B9 bushing.
Specifications subject to change without notice.
M6
SPST
M6
SPDT
M61
SCHEMATIC
P.C. MOUNTING
SCHEMATIC
P.C. MOUNTING
SCHEMATIC
P.C. MOUNTING
ROCKER SWITCHES
SLIDE SWITCHES
SNAP-ACTION SWITCHES
DIP SWITCHES
KEYLOCK SWITCHES
ROTARY SWITCHES
DETECTOR SWITCHES
CAP OPTIONS
74 /
Phone: 800-867-2717
Fax: 763-531-8235
75
info@
P.C. MOUNTING
SCHEMATIC

DMC2990UDJ-7;中文规格书,Datasheet资料

• General Purpose Interfacing Switch • Power Management Functions • Analog Switch
Features and Benefits
• Low On-Resistance • Very low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package 1mm x 1mm • Low Package Profile, 0.45mm Maximum Package height • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device, Halogen and Antimony Free (Note 2) • Qualified to AEC-Q101 standards for High Reliability
RDS(ON) max
0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V 1.9Ω @ VGS = -4.5V 2.4Ω @ VGS = -2.5V 3.4Ω @ VGS = -1.8V 5Ω @ VGS = -1.5V
Symbol PD
RθJA TJ, TSTG
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

SP809中文资料

µS VCC = VTH to (VTH - 0.1V), VTH = 3.1V
ms
VCC = VTH(MAX) TA = +25ºC
TA = -40ºC to + 85ºC
V
VCC = VTH - 0.1V, ISOURCE = 1.2mA
VCC = VTH + 0.1V, ISINK = 1.2mA
BLOCK DIAGRAMS
VCC GND
R1 Bandgap
R2
Reset
Reset Generator
NMOS
N-ch Open-Drain Type
VCC
R1 Bandgap
R2 GND
Reset Generator
Reset (Reset)
Push-Pull Type
TEST CIRCUIT
3 Pin SOT-23
GND
RESET
Now Available in Lead Free Packaging
Part Number SP809N SP809 SP810
Output Type Open-Drain Active Low Push-Pull Active Low Push-Pull Active High
VCC .................................................................................... -0.3V to 6.5V RESET, RESET ......................................................... -0.3 to VCC+ 0.3V Input Current (VCC) ....................................................................... 20mA Output Current (RESET, RESET).................................................. 20mA