Ultralow-Loss 1 8 Splitter Based on Field Matching
非视距条件下航站楼定位算法优化
非视距条件下航站楼定位算法优化作者:丁亚男张旭徐振国汤健来源:《物流科技》2021年第04期摘要:为了解决超宽带(Ultra Wide Band,UWB)在机场航站楼室内环境中因非视距(Non Line of Sight, NLOS)传播带来的定位误差问题,提出了一种改进的信号到达时间差法。
首先,采用粒子滤波算法建立基站到移动节点的距离误差模型,结合误差阈值对测量值进行修正;再将修正后的值代入Chan算法得到移动节点的初始估计位置。
最后,将初始估计位置值带入Taylor级数展开算法,迭代估计出移动节点的精确位置。
仿真表明,该算法在含有非视距误差的室内定位效果上优于传统的Chan、Taylor级数展开法,且迭代次数少于Taylor级数展开算法的迭代次数,并有很好的抗噪声干扰的能力。
关键词:航站楼;室内定位;超宽带;非视距传播;粒子滤波中图分类号:TP301.6 文献标识码:AAbstract: In order to solve the positioning error caused by ultra wide band in the indoor environment of airport terminal due to non-line of sight propagation, an improved signal arrival time difference method is proposed. Firstly, the distance error model between the anchor point and the moving target is established by using the particle filter algorithm, and the measured value is modified by combining the error threshold. Then, the modified value is substituted into the Chan algorithm to get the initial position of the moving target at the initial estimate. Finally, the initial position value is substituted into the Taylor series expansion algorithm to iteratively estimate the exact position of the moving target. Simulation results show that the proposed algorithm is superior to the traditional Chan and Taylor series expansion method in terms of indoor positioning effect with non-line-of-sight error, and the number of iterations is less than the number of iterations of the Taylor series expansion algorithm, and it has good anti-noise interference capability.Key words: terminal; indoor positioning; UWB; NLOS; particle filtering0 引言机场司于2020年1月3日在北京组织召开了“提升民航建设项目规划设计能力座谈会”。
基于聚类分析的管路图像亚像素边缘提取算法
基于聚类分析的管路图像亚像素边缘提取算法王骁;刘检华;刘少丽;金鹏;吴天一【摘要】为了保证管路的加工精度,实现无应力装配,在管路加工后需要测量其三维尺寸.基于机器视觉的管路测量方法由于具有速度快、精度高的特点,越来越广泛地应用在管路三维测量领域.针对该技术中传统边缘提取方法难以准确获得管路边缘的问题,提出一种在复杂光照环境下,快速准确提取管路亚像素精度边缘的方法.首先利用频域滤波滤除噪声,聚类分析细致分割管路区域;然后应用图像形态学提取边缘初值区域,根据局部区域灰度变化求解边缘变化模型;最终实现了管路图像亚像素精度边缘提取,消除了噪声对边缘提取的影响.实验证明,利用本文提取的亚像素边缘,准确可靠,且精度达到0.04个像素尺寸,能够在管路三维重建中提供精确的管路边缘信息.【期刊名称】《计算机集成制造系统》【年(卷),期】2018(024)009【总页数】9页(P2201-2209)【关键词】机器视觉;图像处理;亚像素边缘;聚类分析【作者】王骁;刘检华;刘少丽;金鹏;吴天一【作者单位】北京理工大学机械与车辆学院数字化制造研究所,北京 100081;北京理工大学机械与车辆学院数字化制造研究所,北京 100081;北京理工大学机械与车辆学院数字化制造研究所,北京 100081;北京理工大学机械与车辆学院数字化制造研究所,北京 100081;北京理工大学机械与车辆学院数字化制造研究所,北京100081【正文语种】中文【中图分类】TP391.41 问题的提出管路系统广泛应用在航空航天产品中,它是压力系统、动力系统、冷却系统和控制系统等重要的组成部分,各系统的贮箱、阀门和发动机等零件都由管路连接和中转。
这些系统的寿命、稳定性和可靠性由管路系统的性能决定[1]。
管路具有复杂的外形和走向,为了保证生产符合设计需求的管路,在制造过程中需要进行测量,以验证管路是否合格,从而保证精确装配和无应力装配[2]。
在测量管路零件的方法中,视觉测量是一种快速有效的测量方法[3],其主要思路是重建管路的三维模型,从模型中获取管路有关尺寸。
IT-968BS SE IT-968TC SE 高Tg,低Dk和超低Df层压板和预浸料说明书
IT-968BS SE/IT-968TC SEHigh Tg, Low Dk and Ultra Low Df Laminate & PrepregThe IT-968SE is an advanced low DK Glass fabric, low CTE, high Tg (185° C by DSC) and high speed material. This material is designed not only for standard multilayer PWBs, but also for high electrical performance (ultra low loss) and Lead-free applications.Key Features =============================== Advanced High Tg Resin TechnologyIndustrial standard material with high Tg (185° C by DSC) and excellent electrical properties of dielectric constant (Dk) and loss tangent (Df) properties.Low Dk and Ultra Low DfUltra low Df, less than 0.004 at 10GHz, and keep very stable electrical properties across a wide frequency range. This contributes to easier signal simulation for PCB designers.Excellent Signal IntegrityLow Dk and ultra low Df provide high electrical performance in devices that require faster signal propagation and very low signal loss for high frequency applications greater than 20GHz.Lead-Free Assembly CompatibleRoHS compliant and suitable for high thermal reliability needs, including Lead free assembly with a maximum reflow temperature of 260° C with excellent CAF performance.Available in Variety of ConstructionsAvailable in a variety of constructions, copper weights and glass styles, including H-VLP Rz<2umcopper foil. ApplicationsBackplanesMultilayer PCBLine CardHigh Speed ServersHigh Speed Storage Networks Routing and Switching Systems AntennaRF and Wireless CommunicationIndustrial ApprovalUL 94 V-0IPC-4101DRoHS CompliantREV 04-15ITEQ Laminate/ Prepreg : IT-968TC SE/IT-968BS SELAMINATE (IT-968TC SE)Thickness<0.50 mm[0.0197 in] Thickness≧0.50 mm[0.0197 in] Units T est MethodPropertyTypical Value Spec Typical Value SpecMetric(English)IPC-TM-650(or as noted)Peel Strength, minimumA. Low profile copper foil and very low profile copperfoil - all copper weights > 17µm [0.669 mil]B. Standard profile copper foil-1oz standard foil 0.44 ~ 0.61(2.5 ~ 3.5)0.88 ~ 1.23(5.0 ~ 7.0)0.44 (2.50)0.7 (4.00)0.44 ~ 0.61(2.5 ~ 3.5)0.88 ~ 1.23(5.0 ~ 7.0)0.44 (2.50)0.70 (4.00)N/mm(lb/inch)2.4.82.4.8.22.4.8.3Volume Resistivity, minimumA. C-96/35/90B. After moisture resistanceC. At elevated temperature E-24/125 >1010-->1010106--103-->1010>1010--104103MΩ-cm 2.5.17.1Surface Resistivity, minimumA. C-96/35/90B. After moisture resistanceC. At elevated temperature E-24/125 >109-->109104--103-->109>109--104103MΩ 2.5.17.1Moisture Absorption, maximum -- -- 0.12 0.5 % 2.6.2.1 Dielectric Breakdown, minimum -- -- >50 40 kV 2.5.6 Permittivity (Dk, 50% resin content)(Laminate & Laminated Prepreg)A. 1GHzB. 2GHzC. 5GHzD. 10GHz 3.443.443.353.34AABUS3.443.443.353.34AABUS--2.5.5.92.5.5.132.5.5.132.5.5.13Loss Tangent (Df, 50% resin content) (Laminate & Laminated Prepreg)A. 1GHzB. 2GHzC. 5GHzD. 10GHz 0.00270.00300.00350.0038AABUS0.00310.00300.00350.0038AABUS --2.5.5.92.5.5.132.5.5.132.5.5.13Flexural Strength, minimumA. Length directionB. Cross direction --------444 (64380)415 (60175)415 (60,190)345 (50,040)N/mm2(lb/in2)2.4.4Arc Resistance, minimum >60 60 >60 60 s 2.5.1 Thermal Stress 10 s at 288°C [550.4F],minimumA. UnetchedB. Etched PassPassPass VisualPass VisualPassPassPass VisualPass VisualRating 2.4.13.1Electric Strength, minimum(Laminate & Laminated Prepreg)>30 30 -- -- kV/mm 2.5.6.2 Flammability,(Laminate & Laminated Prepreg)V-0 V-0 V-0 V-0 Rating UL94 Glass Transition Temperature(TMA) -- -- 175 170 minimum ˚C 2.4.24Decomposition Temperature-- -- 400 340 minimum ˚C2.4.24.6 (5% wt loss)X/Y Axis CTE (40℃ to 125℃) -- -- 12-14 -- ppm/˚C 2.4.24 Z-Axis CTEA. Alpha 1B. Alpha 2C. 50 to 260 Degrees C ------------452602.360 maximum300 maximum3.5 maximumppm/˚Cppm/˚C%2.4.24Thermal ResistanceA. T260B. T288 -------->60>6030 minimum15 minimumMinutesMinutes2.4.24.1CAF Resistance -- -- Pass AABUS Pass/Fail 2.6.25The above data and fabrication guide provide designers and PCB shop for their reference. We believe that these information are accurate, however, the data may vary depend on the test methods and specification used. The actual sales of the product should be according to specification in the agreement between ITEQ and its customer. ITEQ reserves the right to revise its data at any time without notice and maintain the best information available to users.REV 04-15。
一种新的基于遗传算法DCT域半脆弱水印算法
一种新的基于遗传算法DCT域半脆弱水印算法王祥青;毛德梅;徐华丽【摘要】半脆弱水印因为在多媒体内容认证方面的重要作用而受到人们密切的关注。
为了能够区分偶然攻击与恶意篡改,半脆弱水印需要对一般的内容保护图像操作有一定的鲁棒性。
基于此,提出了遗传算法的半脆弱数字图像水印方法。
根据图像局部区域的类型自适应地确定图像局部区域的水印嵌入强度,GA用来优化水印的嵌入位置。
实验结果证实了所提的算法的优点,表明该方法具有较好的不可见性和鲁棒性,并实现了印刷图像载体版权保护。
%Semi-fragile watermark has attracted attentiondue to its important role in content authentication for multimedia. In order to differentiate incidental attacks and malicious attacks, the semi-fragile watermark must be robust against content-protection image pro- cessing. This paper proposes a new semi-fragile digital image watermarking scheme based on genetic algorithm (GA). In the scheme, the genetic algorithm used for optimizing embedding strength is employed to optimize the embedding location. Experimental results show that our scheme has both high fidelity and good robustness, which can realize digital copyright protection for printed image.【期刊名称】《山西电子技术》【年(卷),期】2012(000)005【总页数】3页(P50-52)【关键词】内容认证;半脆弱水印;遗传算法;鲁棒性【作者】王祥青;毛德梅;徐华丽【作者单位】皖西学院信息工程学院,安徽六安237012;皖西学院信息工程学院,安徽六安237012;皖西学院信息工程学院,安徽六安237012【正文语种】中文【中图分类】TP309.7近年来,随着网络技术和多媒体技术的迅速发展,网络安全问题受到的大家的普遍关注。
基于提升小波变换的红外图像双重滤波算法
基于提升小波变换的红外图像双重滤波算法刘艾琳【摘要】In order to filter the random noise in infrared images effectively , new double filtering algorithm was proposed based on lifting wavelet transform .Firstly, the noise infrared image was decomposed with lifting wavelet at first time.And then, the obtained high-frequency and low-frequency wavelet coefficients were decomposed with lifting wavelet transformation again .The improved threshold function model and nonlocal mean filter algorithm were used to filter the noise of lifting wavelet coefficients .Finally, histogram equalization algorithm was introduced to improve the visual effect of the filtering image.The standard test images, the experimental infrared images, peak signal-noise-ratio (PSNR) and structural similarity ( SSIM) were obtained .The results show that , the performance of the algorithm in this paper is good to deal with noise infrared images .%为了有效抑制红外图像中的随机噪声,采用一种基于提升小波变换的双重滤波算法来进行处理。
Silicon Sensing Systems DMU30-01 高性能 MEMS 陀螺仪 加速计技
FeaturesPrecision 6-DOF MEMS Inertial Measurement Unit Silicon Sensing’s latest VSG3Q MAX inductive gyroand capacitive accelerometer MEMSExcellent Bias Instability and Random WalkAngular - 0.1°/hr, 0.02°/√hrLinear - 15μg, 0.05m/s/√hrNon-ITARCompact and lightweight - 68.5 x 61.5 x 65.5H (mm), 345gInternal power conditioning to accept 4.75V to 36V input voltageRS422 interfaces-40°C to +85°C operating temperature range Sealed aluminium housingRoHS compliantIn-house manufacture from MEMS fabrication to IMU calibrationEvaluation kit and integration resources availableFirst class customer technical supportFuture developments and expansion capabilityMulti sensor MEMS blendingLow power ‘sleep’ modeAdditional sensor integration - GPS/Magnetometer/BarometerNorth fi nding modeAHRS functionalityOther interface protocols and specifi cationsCustom and host application integrationDMU30-01 IMU DMU30 Evaluation Kit DMU30 Mating ConnectorFigure 5.3 Gyro Scale Factor Errorover TemperatureFigure 5.5 Gyro Max Non-Linearity Error (±490°/s range) over Temperature Figure 5.4 Normalised Gyro Scale Factor Errorover TemperatureFigure 5.6 Gyro Max Non-Linearity Error (±200°/s range) over TemperatureFigure 5.1 Gyro Bias Error (°/h) over Temperature Figure 5.2 Normalised Gyro Bias Error (°/h)over TemperatureFigure 5.11 Accelerometer Scale Factor Error (±1g range) over Temperature(Plymouth g = 9.81058m/s/s)Figure 5.10 Normalised AccelerometerBias Error (mg) over TemperatureFigure 5.12 Normalised Accelerometer Scale Factor Error (±1g range) over TemperatureFigure 5.7 Gyro Noise (°/srms) vs Test Chamber Temperature Figure 5.8 Gyro Misalignments and Crosscoupling (±200°/s range) over Chamber TemperatureFigure 5.15 current Consumption vs Chamber Temperature (12V supply)Figure 5.16 DMU30 Temperature Output Difference (°/C) vs Test Temperature (self heating)Figure 5.17 Gyro Allan Variance Figure 5.14 Accelerometer Misalignments and Crosscoupling over TemperatureFigure 5.18 Gyro In Run StabilityFigure 5.21 Accelerometer Allan Variance Figure 5.23 Accelerometer Spectral DataFigure 5.22 Accelerometer In Run Stability Figure 5.24 Accelerometer Cumulative Noise Figure 5.20 Gyro Cumulative NoiseFigure 5.19 Gyro Spectral DataFigure 8.1 DMU30 Evaluation Kit8.1.1 DMU30 Evaluation Kit ContentsFigure 9.1 DMU30 LabelSER NO. YYWWXXXX CCMADE IN PLYMOUTH UKFigure 11.1 Axis De In order to minimise the requirement for size effectcompensation the accelerometer seismic masses have been located as close as possible to the centre of the DMU30 (the inertial reference point shown in Figure 11.2).61.5 M A X68.5 MAXExperts on Design-Infor sensors and power solutionsScan here and get an overview of personal contacts!We are here for you. Addresses and Contacts.Headquarter Switzerland:Angst+Pfister Sensors and Power AG Thurgauerstrasse 66CH-8050 ZurichPhone +41 44 877 35 00*********************************Office Germany:Angst+Pfister Sensors and Power Deutschland GmbH Edisonstraße 16D-85716 UnterschleißheimPhone +49 89 374 288 87 00************************************。
光子晶体波导折射率传感器灵敏度优化设计说明书
51,052304(2014)激光与光电子学进展Laser&Optoelectronics Progress©2014《中国激光》杂志社基于光子晶体波导的折射率传感器的灵敏度优化设计柯林佟陈卫业张洋李荣生沈义峰中国矿业大学理学院,江苏徐州221116摘要通过研究波导两侧缺陷处的折射率对二维光子晶体波导透射光谱的影响,提出一种提高折射率传感器灵敏度的方案。
计算结果表明光子透射带上边沿的偏移量与传感区折射率的大小存在一定关系,在相同的折射率变化量下通过改变波导两侧缺陷处圆孔的相关几何参数可极大提高光子透射带上边沿的偏移量,即提高折射率传感器的灵敏度。
通过优化设计,传感器的灵敏度由折射率变化区间0.0~1.0的55nm/RIU(RIU表示折射率单元)与1.1~2.0的36nm/RIU分别提高到对应的405nm/RIU以及222nm/RIU。
关键词光学器件;折射率传感器;灵敏度优化;光子晶体波导;光子带隙;时域有限差分法中图分类号O436文献标识码A doi:10.3788/LOP51.052304Optimizing Design for Sensitivity Improvement of Refractive Index Sensors Based on Photonic Crystal WaveguideKe Lintong Chen Weiye Zhang Yang Li Rongsheng Shen Yifeng Department of Physics,China University of Mining and Technology,Xuzhou,Jiangsu221116,ChinaAbstract The transmission spectrum of a two-dimensional photonic crystal waveguide with edge defects of different refractive indexes(RIs)is analyzed,and accordingly a proposal to improve the sensitivity of RI sensor is put forward.The simulations and calculations show that the offset of the upper band edge of the transmission band is related to the RI of the analyte.For the same RI variation,the shift of the upper band edge of the transmission band can be greatly improved by changing the related geometrical parameters of holes at the defect area near both sides of the ly,the sensitivity of the RI sensor is enhanced.In this paper the sensitivity is respectively improved from55nm/RIU(RIU means refractive index unit)to405nm/RIU and36nm/ RIU to222nm/RIU corresponding to the range of the variation of RI(D n)from0.0to1.0and1.1to2.0after the optimizing process.Key words optical devices;refractive index sensor;sensitivity optimization;photonic crystal waveguide;photonic band gap;finite-different time-domain methodOICS codes230.5298;280.4788;130.5296;350.42381引言John等[1-4]于20世纪80年代提出了光子晶体这种新型材料的概念。
Thermo Scientific Helios 5 FX DualBeam说明书
Helios 5 FX DualBeamEnabling breakthrough failure analysis for advanced technology nodesThe Helios 5 Dual Beam platform continues to serve the imaging, analysis, and S/TEM sample preparation applications in the most advanced semiconductor failure analysis, process development and process control laboratories.The Thermo Scientific ™ Helios 5 FX ™ DualBeam continues the Helios legacy to the fifth generation combining the innovative Elstar ™ with UC+ technology electron column for high-resolution and high materials contrast imaging, in-lens S/TEM 4 for 3Å in-situ low kV S/TEM imaging and the superior low kV performing Phoenix ™ ion column for fast, precise and sub-nm damagesample preparation. In addition to the industry leading SEM and FIB columns, the Helios 5 FX incorporates a suite of state-of-the-art technologies which enable simple and consistent sample preparation (for high resolution S/TEM imaging and/or Atom Probe microscopy) on even the most challenging samples.High quality imaging at all landing energiesThe ultra-high brightness electron source on the Helios 5 FX System is equipped with 2nd generation UC technology (UC+) to reduce the beam energy spread below 0.2 eV for beam currents up to 100 pA. This enables sub-nanometer resolution and high surface sensitivity at low landing energies. The highly efficient Mirror Detector and In-Column Detector in the Helios 5 FX System come with the ability to simultaneously acquire and mix TLD-SE, MD-BSE and ICD-BSE signals to produce the best overall ultra-high resolution images. Low-loss MD-BSE provides excellent materials contrast with an improvement of up to 1.5x in Contrast-to-Noise ratio, while No-loss ICD-BSE provides materials contrast with maximum surface sensitivity.Shorten time to useable dataThe Helios 5 FX System is the world’s first DualBeam toincorporate a TEM-like CompuStage for TEM lamella sample preparation and combine it with an all new In-lens STEM 4 detector to drastically reduce the time to high quality useable data. The integrated CompuStage is independent of the bulk stage and comes with separate X, Y, Z, eucentric 180° alpha tilt and 200° beta tilt axes enabling SEM endpointing on both sides of S/TEM lamella. The accompanying S/TEM rod is compatible with standard 3 mm TEM grids and enables fast grid exchange without breaking vacuum. In addition, the system is equippedDATASHEETHigh-performance Elstar electron column with UC+monochromator technology for sub-nanometer SEM and S/TEM image resolutionExceptional low kV Phoenix ion beam performance enables sub-nm TEM sample preparation damageSharp, refined, and charge-free contrast obtained from up to 5 integrated in-column and below-the-lens detectors MultiChem Gas Delivery System provides the most advanced capabilities for electron and ion beam induced deposition and etching on DualBeamsEasyLift EX Nanomanipulator enables precise, site-specific preparation of ultra-thin TEM lamellae all while promoting high user confidence and yieldSTEM 4 detector provides outstanding resolution and contrast on thin TEM samplesBacked by the Thermo Fisher Scientfic world class knowledge and expertise in advanced failure analysis forDualBeam applicationsFigure 1. TEM sample preparation using the Thermo Scientific iFAST automation software package and extracted using the EasyLift Nanomanipulator.Figure 2. HRSTEM Bright Field image of a 14 nm SRAM Inverter thinned to 15 nm showing both nFET and pFET structures connected with a metal gate.For current certifications, visit /certifications. © 2020 FEI Company. All rights reserved.All trademarks are the property of Thermo Fisher Scientific and its subsidiaries unless otherwise specified. DS0283-EN-07-2020Find out more at /EM-Saleswith a retractable, annular STEM 4 detector which can be used either in standard mode for real-time STEM endpointing (6Å resolution) or in the new In-lens mode for ultimate imaging performance (3Å resolution). Both modes support improved materials contrast through the use of Bright Field, Dark Field annular and HAADF segments collecting transmitted electrons simultaneously. A new STEM detector enables diffraction imaging and zone axis alignment (automated or manual), enabling highest resolution and contrast on STEM samples. Extreme high resolution, high contrast imaging of ultra-thin lamella is now possible using 30 kV electrons. Having the ability to complete failure analysis work in the DualBeam without exposing the finished sample to ambient air shortens the time to data and reduces the need for standalone S/TEM systems.High quality ultra-thin TEM sample preparationPreparing high quality, ultra-thin TEM samples requires polishing the sample with very low kV ions to minimize damage to the sample. The Thermo Scientific most advanced Phoenix Focused Ion Beam (FIB) column not only delivers high resolution imaging and milling at 30 kV but now expands unmatched FIB performance down to accelerating voltages as low as 500 V enabling the creation of 7 nm TEM lamella with sub-nm damage layers.Enabling flexibilitySmart Alignments actively maintain the system for optimum performance, ready to deliver the highest performance for all users. Patterning improvements ensure the highest quality depositions at any condition, and an extensive automation suite make the Helios 5 the most advanced DualBeam ever assembled—all backed by the Thermo Fisher expert application and service support. Specifications • Electron source–Schottky thermal field emitter, over 1 year lifetime • Ion source–Gallium liquid metal, 1000 hours • Landing Voltage –20 V – 30 kV SEM –500 V – 30 kV FIB • STEM resolution –6Å Standard mode –3Å In-len mode • SEM resolution–Optimal WD0.6 nm @ 2–15 kV 0.7 nm @ 1 kV1.0 nm @ 500 V with beam deceleration –Coincident WD 0.8 nm @ 15 kV 1.2 nm @ 1 kV• Ion beam resolution at coincident point –4.0 nm @ 30 kV using preferred statistical method –2.5 nm @ 30 kV using selective edge method–500 nm @ 500 V using preferred statistical method • EDS resolution–< 30 nm on thinned samples • Gas Delivery–Integrated MultiChem Gas Delivery System –Up to 6 chemistries can be installed –Up to 2 external gasses can be installed • In situ TEM sample liftout –EasyLift EX Nanomanipulator • Stage–5 axis CompuStage with S/TEM holder, equipped with automated insert/retract mechanism and air lock for fast TEM grid exchange without breaking system vacuum –5 axis all piezo motorized bulk stage with automated Loadlock • Sample types–Wafer pieces, packaged parts, grids • Maximum sample size–70 mm diameter with full travel• Application software–iFAST Developers Kit Professional automation software • User interface–Windows ® 10 GUI with integrated SEM, FIB, GIS, simultaneous patterning and imaging mode –Local language support: Check with your local Thermo Fisher sales representatives for available language packs –Two 24-inch widescreen LCD monitors Key options• MultiChem gas chemistries –Range of deposition and etch chemistries • Software–Auto Slice & View ™ software, Magma CAD Navigation • Hardware –EDS and WDS。
MPI TITAN RF Probe Selection Guide
MPI Probe Selection GuideWith a critical understanding of the numerous measurement challenges associated with today’s RF ap-plications, MPI Corporation has developed TITAN™ RF Probes, a product series specifically optimized for these complex applications centered upon the requirements of advanced RF customers.TITAN™ Probes provide the latest in technology and manufacturing advancements within the field of RF testing. They are derived from the technology transfer that accompanied the acquisition of Allstron, then significantly enhanced by MPI’s highly experienced RF testing team and subsequently produced utilizing MPI’s world class MEMS technology. Precisely manufactured, the TITAN™ Probes include matched 50 Ohm MEMS contact tips with improved probe electrical characteristics which allow the realization of unmat -ched calibration results over a wide frequency range. The patented protrusion tip design enables small passivation window bond pad probing, while significantly reducing probe skate thus providing the out -standing contact repeatability required in today’s extreme measurement environments. TITAN TM Probes with all their features are accompanied by a truly affordable price.The TITAN™ Probe series are available in single-ended and dual tip configurations, with pitch range from 50 micron to 1250 micron and frequencies from 26 GHz to 110 GHz. TITAN™ RF Probes are the ideal choice for on-wafer S-parameter measurements of RF, mm-wave devices and circuits up to 110 GHz as well as for the characterization of RF power devices requiring up to 10 Watts of continuous power. Finally, customers can benefit from both long product life and unbeatable cost of ownership which they have desired foryears.Unique design of the MEMS coplanar contacttip of the TITAN™ probe series.DC-needle-alike visibility of the contact point and the minimal paddamage due to the unique design of the tipAC2-2 Thru S11 Repeatability. Semi-Automated System.-100-80-60-40-200 S 11 E r r o r M a g n i t u d e (d B )Frequency (GHz)Another advantage of the TITAN™ probe is its superior contact repeatability, which is comparable with the entire system trace noise when measured on the semi-automated system and on gold contact pads.CROSSTALKCrosstalk of TITAN™ probes on the short and the bare ceramic open standard of 150 micron spacing compared to conventional 110 GHz probe technologies. Results are corrected by the multiline TRL calibration. All probes are of GSG configuration and 100 micron pitch.-80-60-40-200Crosstalk on Open. Multiline TRL Calibration.M a g (S21) (d B )Frequency (GHz)-80-60-40-200Crosstalk on Short. Multiline TRL Calibration.M a g (S21) (d B )Frequency (GHz)The maximal probe c ontac t repeatability error of the c alibrate S11-parameter of the AC2-2 thru standard by T110 probes. Semi-automated system. Ten contact circles.Cantilever needle material Ni alloy Body materialAl alloy Contact pressure @2 mils overtravel 20 g Lifetime, touchdowns> 1,000,000Ground and signal alignment error [1]± 3 µm [1]Planarity error [1] ± 3 µm [1]Contact footprint width < 30 µm Contact resistance on Au < 3 mΩThermal range-60 to 175 °CMechanical CharacteristicsAC2-2 Thru S21 Repeatability. Manual TS50 System.-100-80-60-40-200S 21 E r r o r M a g n i t u d e (d B )Frequency (GHz)MECHANICAL CHARACTERISTICSThe maximal probe c ontac t repeatability error of the c alibrate S21-parameter of the AC2-2 thru standard by T50 probes. Manual probe system TS50.26 GHZ PROBES FOR WIRELESS APPLICATIONSUnderstanding customer needs to reduce the cost of development and product testing for the high competitive wireless application market, MPI offers low-cost yet high-performance RF probes. The specifically developed SMA connector and its outstanding transmission of electro-magnetic waves through the probe design make these probes suitable for applications frequencies up to 26 GHz. The available pitch range is from 50 micron to 1250 micron with GS/SG and GSG probe tip configurations. TITAN™ 26 GHz probes are the ideal choice for measurement needs when developing components for WiFi, Bluetooth, and 3G/4G commercial wireless applications as well as for student education.Characteristic Impedance 50 ΩFrequency rangeDC to 26 GHz Insertion loss (GSG configuration)1< 0.4 dB Return loss (GSG configuration)1> 16 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical Characteristics26 GHz Probe Model: T26Connector SMAPitch range50 µm to 1250 µm Standard pitch step from 50 µm to 450 µm from 500 µm to 1250 µm25 µm step 50 µm stepAvailable for 90 µm pitch Tip configurations GSG, GS, SG Connector angleV-Style: 90-degree A-Style: 45-degreeMechanical CharacteristicsT26 probe, A-Style of the connectorTypical Electrical Characteristics: 26 GHz GSG probe, 250 micron pitchPROBES FOR DEVICE AND IC CHARACTERIZATION UP TO 110 GHZTITAN™ probes realize a unique combination of the micro-coaxial cable based probe technology and MEMS fabricated probe tip. A perfectly matched characteristic impedance of the coplanar probe tips and optimized signal transmission across the entire probe down to the pads of the device under test (DUT) result in excellent probe electrical characteristics. At the same time, the unique design of the probe tip provides minimal probe forward skate on any type of pad metallization material, therefo -re achieving accurate and repeatable measurement up to 110 GHz. TITAN™ probes are suitable for probing on small pads with long probe lifetime and low cost of ownership.The TITAN™ probe family contains dual probes for engineering and design debug of RF and mm-wave IC’s as well as high-end mm-wave range probes for S-parameter characterization up to 110 GHz for modeling of high-performance microwave devices.Characteristic Impedance 50 ΩFrequency rangeDC to 40 GHz Insertion loss (GSG configuration)1< 0.6 dB Return loss (GSG configuration)1> 18 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical Characteristics40 GHz Probe Model: T40Connector K (2.92 mm)Pitch range50 µm to 500 µmStandard pitch step For GSG configuration:from 50 µm to 450 µm from 500 µm to 800 µmFor GS/SG configuration:from 50 µm to 450 µm 25 µm step 50 µm stepAvailable for 90 µm pitch25 µm stepAvailable for 90/500 µm pitch Tip configurations GSG, GS, SG Connector angleV-Style: 90-degree A-Style: 45-degreeMechanical CharacteristicsTypical Electrical Characteristics: 40 GHz GSG probe, 150 micron pitchT40 probe, A-Style of the connectorCharacteristic Impedance50 ΩFrequency range DC to 50 GHz Insertion loss (GSG configuration)1< 0.6 dB Return loss (GSG configuration)1> 17 dBDC current≤ 1 ADC voltage≤ 100 VRF power, @10 GHz≤ 5 W Typical Electrical Characteristics Connector Q (2.4 mm)Pitch range50 µm to 250 µm Standard pitch stepFor GSG configuration: from 50 µm to 450 µm For GS/SG configuration: from 50 µm to 450 µm 25 µm stepAvailable for 90/500/550 µm pitch 25 µm stepAvailable for 90/500 µm pitchTip configurations GSG, GS, SG Connector angle V-Style: 90-degreeA-Style: 45-degreeMechanical CharacteristicsT50 probe, A-Style of the connectorTypical Electrical Characteristics: 50 GHz GSG probe, 150 micron pitchCharacteristic Impedance50 ΩFrequency range DC to 67 GHz Insertion loss (GSG configuration)1< 0.8 dB Return loss (GSG configuration)1> 16 dBDC current≤ 1 ADC voltage≤ 100 VRF power, @10 GHz≤ 5 W Typical Electrical Characteristics Connector V (1.85 mm)Pitch range50 µm to 250 µm Standard pitch stepFor GSG configuration: from 50 µm to 400 µm For GS/SG configuration: from 50 µm to 250 µm 25 µm step Available for 90 µm pitch25 µm step Available for 90 µm pitchTip configurations GSG Connector angle V-Style: 90-degreeA-Style: 45-degreeMechanical CharacteristicsT67 probe, A-Style of the connectorTypical Electrical Characteristics: 67 GHz GSG probe, 100 micron pitchCharacteristic Impedance 50 ΩFrequency rangeDC to 110 GHz Insertion loss (GSG configuration)1< 1.2 dB Return loss (GSG configuration)1> 14 dB DC current ≤ 1 A DC voltage ≤ 100 V RF power, @10 GHz≤ 5 WTypical Electrical CharacteristicsMechanical CharacteristicsTypical Electrical Characteristics: 110 GHz GSG probe, 100 micron pitchT110 probe, A-Style of the connectorCharacteristic impedance50 ΩFrequency range DC to 220 GHz Insertion loss (GSG configuration)1< 5 dB Connector end return loss(GSG configuration)1> 9 dBTip end return loss(GSG configuration)1> 13 dBDC current≤ 1.5 ADC voltage≤ 50 V Typical Electrical CharacteristicsConnector Broadband interface Pitch range50/75/90/100/125 µm Temperature range -40 ~ 150 ºC Contact width15 µmquadrant compatible(allowing corner pads)Yes recommended pad size20 µm x 20 µm recommended OT (overtravel)15 µmcontact resistance(on Al at 20 ºC using 15 µm OT)< 45 mΩlifetime touchdowns(on Al at 20 ºC using 15 µm OT)> 200,000Mechanical CharacteristicsT220 probe, broadband interface Typical Performance (at 20 ºC for 100 µm pitch)BODY DIMENSIONS PROBES Single-Ended V-StyleT220 GHz Probe1.161.1628.328437.455.6512.5527.73Single-Ended A-StyleCALIBRATION SUBSTRATESAC-series of calibration standard substrates offers up to 26 standard sets for wafer-level SOL T, LRM probe-tip cali -bration for GS/SG and GSG probes. Five coplanar lines provide the broadband reference multiline TRL calibration as well as accurate verification of conventional methods. Right-angled reciprocal elements are added to support the SOLR calibration of the system with the right-angled configuration of RF probes. A calibration substrate for wide-pitch probes is also available.Material Alumina Elements designCoplanarSupported calibration methods SOLT, LRM, SOLR, TRL and multiline TRL Thickness 635 µmSizeAC2-2 : 16.5 x 12.5 mm AC3 : 16.5 x 12.5 mm AC5 : 22.5 x 15 mm Effective velocity factor @20 GHz0.45Nominal line characteristic impedance @20 GHz 50 ΩNominal resistance of the load 50 ΩTypical load trimming accuracy error ± 0.3 %Open standardAu pads on substrate Calibration verification elements Yes Ruler scale 0 to 3 mm Ruler step size100 µmCalibration substrate AC2-2Probe Configuration GSGSupported probe pitch100 to 250 µm Number of SOL T standard groups 26Number of verification and calibration lines5Calibration substrate AC-3Probe Configuration GS/SG Supported probe pitch50 to 250 µm Number of SOL T standard groups 26Number of verification and calibration lines5Calibration substrate AC-5Probe Configuration GSG, GS/SG Supported probe pitch250 to 1250 µm Number of SOL T standard groups GSG : 7GS : 7SG : 7Open standardOn bare ceramic Number of verification and calibration linesGSG : 2GS : 1Typical characteristics of the coplanar line standard of AC2-2 calibration substrate measured using T110-GSG100 probes, and methods recommended by the National Institute of Standard and Technologies [2, 3].2468(d B /c m )F requency (G Hz)α-6-4-202I m a g (Z 0) ()F requency (G Hz)AC2-2 W#006 and T110A-GSG100Ω2.202.222.242.262.282.30 (u n i t l e s s )F requency (G Hz)β/βо4045505560R e a l (Z 0) ()F requency (G Hz)ΩTypical Electrical CharacteristicsMPI QAlibria® RF CALIBRATION SOFTWAREMPI QAlibria® RF calibration software has been designed to simplify complex and tedious RF system calibration tasks. By implementing a progressive disclosure methodology and realizing intuitive touch operation, QAlibria® provides crisp and clear guidance to the RF calibration process, minimizing con-figuration mistakes and helping to obtain accurate calibration results in fastest time. In addition, its concept of multiple GUI’s offers full access to all configuration settings and tweaks for advanced users. QAlibria® offers industry standard and advanced calibration methods. Furthermore, QAlibria® is integrated with the NIST StatistiCal™ calibration packages, ensuring easy access to the NIST mul-tiline TRL metrology-level calibration and uncertainty analysis.MPI Qalibria® supports a multi-language GUI, eliminating any evitable operation risks and inconvenience.SpecificationsRF AND MICROWAVE CABLESMPI offers an excellent selection of flexible cables and acces-sories for RF and mm-wave measurement applications forcomplete RF probe system integration.CablesHigh-quality cable assemblies with SMA and 3.5 mm connectorsprovide the best value for money, completing the entry-level RFsystems for measurement applications up to 26 GHz. Phase stab-le high-end flexible cable assemblies with high-precision 2.92, 2.4, 1.85 and 1 mm connectors guarantee high stability, accuracy and repeatability of the calibration and measurement for DC applications up to 110 GHz.MPI offers these cable assemblies in two standard lengths of 120 and 80 cm, matching the probe system’s footprint and the location of the VNA.Cables Ordering InformationMRC-18SMA-MF-80018 GHz SMA flex cable SMA (male) - SMA (female), 80 cmMRC-18SMA-MF-120018 GHz SMA flex cable SMA (male) - SMA (female), 120 cmMRC-26SMA-MF-80026 GHz SMA flex cable SMA (male) - SMA (female), 80 cmMRC-26SMA-MF-120026 GHz SMA flex cable SMA (male) - SMA (female), 120 cmMRC-40K-MF-80040 GHz flex cable 2.92 mm (K) connector, male-female, 80 cm longMRC-40K-MF-120040 GHz flex cable 2.92 mm (K) connector, male-female, 120 cm longMRC-50Q-MF-80050 GHz flex cable 2.4 mm (Q) connector, male-female , 80 cm longMRC-50Q-MF-120050 GHz flex cable 2.4 mm (Q) connector, male-female , 120 cm longMRC-67V-MF-80067 GHz flex cable 1.85 mm (V) connector, male-female, 80 cm longMRC-67V-MF-120067 GHz flex cable 1.85 mm (V) connector, male-female, 120 cm longMMC-40K-MF-80040 GHz precision flex cable 2.92 mm (K) connector, male-female, 80 cm long MMC-40K-MF-120040 GHz precision flex cable 2.92 mm (K) connector, male-female, 120 cm long MMC-50Q-MF-80050 GHz precision flex cable 2.4 mm (Q) connector, male-female , 80 cm long MMC-50Q-MF-120050 GHz precision flex cable 2.4 mm (Q) connector, male-female , 120 cm long MMC-67V-MF-80067 GHz precision flex cable 1.85 mm (V) connector, male-female, 80 cm long MMC-67V-MF-120067 GHz precision flex cable 1.85 mm (V) connector, male-female, 120 cm long MMC-110A-MF-250110 GHz precision flex cable 1 mm (A) connector, male-female, 25 cm longMPI Global PresenceDirect contact:Asia region: ****************************EMEA region: ******************************America region: ********************************MPI global presence: for your local support, please find the right contact here:/ast/support/local-support-worldwide© 2023 Copyright MPI Corporation. All rights reserved.[1] [2][3] REFERENCESParameter may vary depending upon tip configuration and pitch.R. B. Marks and D. F. Williams, "Characteristic impedance determination using propagation constant measu -rement," IEEE Microwave and Guided Wave Letters, vol. 1, pp. 141-143, June 1991.D. F. Williams and R. B. Marks, "Transmission line capacitance measurement," Microwave and Guided WaveLetters, IEEE, vol. 1, pp. 243-245, 1991.AdaptersHigh-In addition, high-quality RF and high-end mm-wave range adapters are offered to address challenges ofregular system reconfiguration and integration with different type of test instrumentation. MRA-NM-350F RF 11 GHz adapter N(male) - 3.5 (male), straight MRA-NM-350M RF 11 GHz adapter N(male) - 3.5 (female), straightMPA-350M-350F Precision 26 GHz adapter 3.5 mm (male) - 3.5 mm (female), straight MPA-350F-350F Precision 26 GHz adapter 3.5 mm (female) - 3.5 mm (female), straight MPA-350M-350M Precision 26 GHz adapter 3.5 mm (male) - 3.5 mm (male), straight MPA-292M-240F Precision 40 GHz adapter 2.92 mm (male) - 2.4 mm (female), straight MPA-292F-240M Precision 40 GHz adapter 2.92 mm (female) - 2.4 mm (male), straight MPA-292M-292F Precision 40 GHz adapter 2.92 mm (male) - 2.92 mm (female), straight MPA-292F-292F Precision 40 GHz adapter 2.92 mm (female) - 2.92 mm (female), straight MPA-292M-292M Precision 40 GHz adapter 2.92 mm (male) - 2.92 mm (male), straight MPA-240M-240F Precision 50 GHz adapter 2.4 mm (male) - 2.4 mm (female), straight MPA-240F-240F Precision 50 GHz adapter 2.4 mm (female) - 2.4 mm (female), straight MPA-240M-240M Precision 50 GHz adapter 2.4 mm (male) - 2.4 mm (male), straight MPA-185M-185F Precision 67 GHz adapter 1.85 mm (male) -1.85 mm (female), straight MPA-185F-185F Precision 67 GHz adapter 1.85 mm (female) -1.85 mm (female), straight MPA-185M-185M Precision 67 GHz adapter 1.85 mm (male) -1.85 mm (male), straight MPA-185M-100FPrecision 67 GHz adapter 1.85 mm (male) -1.00 mm (female), straightDisclaimer: TITAN Probe, QAlibria are trademarks of MPI Corporation, Taiwan. StatistiCal is a trademark of National Institute of Standards and Technology (NIST), USA. All other trademarks are the property of their respective owners. Data subject to change without notice.。
Dielectric-fibre surface waveguides for optical frequencies中文翻译
光频率介质纤维表面波导Dielectric-fibre surface waveguides for optical frequencies高锟(G.A. Hockham)关键词:光学纤维,波导摘要:折射率高于周围区域的介质纤维是作为在光频段引导传输的可能的介质的一种介电波导形式。
文章中讨论的这种特殊的结构形式是圆的横截面。
用作通信目的的光波导传播模式的选择通常主要考虑损耗特性和信息容量。
文章中讨论了介电损耗,弯曲损耗和辐射损耗并且讨论了与信息容量相关的模式稳定,色散和功率控制,同时也讨论了物理实现方面,也包含 了对对光学和微波波长的实验研究。
主要符号列表:n J = n 阶的第一类贝塞尔函数n K = 2π修正的第二类n 阶的变型贝塞尔函数β = g2λπ,波导的相位系数 n J ' = n J 的一阶导数n K ' = n K 的一阶导数i h = 衰减系数或辐射波数i ε = 相对介电常数0k = 自由空间传播系数a = 光纤半径γ = 纵向传播系数k = 波耳兹曼常数T = 绝对温度,Kc β = 等温可压缩性λ = 波长n = 折射率)(H i υ = 第υ阶Hankel 函数的第i 阶导数υH ' = υH 的导数 υ = 方位角传播系数=21υυj -L = 调制周期下标n 是整数,下标m 是n J = 0的第m 个根。
1. 简介折射率高于周围区域的介质纤维是一种介电波导,它代表了光频段中能量有向传输的一种媒介。
这种结构形式引导电磁波沿着不同折射率区域的特定边界传播,相关电磁场部分在光纤内部分在光纤外。
外部电磁场在垂直于传播方向上是逐渐消失的,以且在无穷远处以近似指数的形式衰减到零。
这种结构经常被称为开放波导,以表面波模式传播。
下面要讨论的是具有圆形截面的特种介质纤维波导。
2.介质纤维波导具有圆形截面的介质纤维能够传输所有的H 0m 模、E 0m 模和HE nm 混合模。
改进哈里斯鹰算法及其在FIR滤波器中的应用
改进哈里斯鹰算法及其在FIR滤波器中的应用作者:郭佳宁杨婧刘婷来源:《软件工程》2022年第06期摘要:針对原始哈里斯鹰算法(Harris Hawks Optimization, HHO)存在收敛精度低、易陷入局部最优等问题,提出一种改进的哈里斯鹰算法。
首先引入Logistic混沌映射加强扰动,丰富种群多样性,提高算法收敛精度;其次用非线性逃逸能量因子代替线性逃逸能量因子,易于跳出局部最优。
为了验证改进效果,利用改进算法求解FIR滤波器设计问题。
仿真结果表明,与原始哈里斯鹰算法相比,基于改进算法的FIR滤波器具有更加理想的通带和阻带性能。
关键词:FIR滤波器;哈里斯鹰算法;Logistic混沌映射;非线性逃逸能量因子中图分类号:TP311 文献标识码:AImproved Harris Hawks Optimization and Its Application in FIR FilterGUO Jianing, YANG Jing, LIU TingAbstract: Aiming at the problems of the original Harris Hawks Optimization (HHO), such as low convergence accuracy and easy to fall into local optimum, this paper proposes an improved HHO. Firstly, Logistic chaos mapping is introduced to strengthen the disturbance, enrich population diversity, and improve the convergence accuracy of the algorithm. Secondly, the nonlinear escape energy factor is used to replace the linear escape energy factor, which is easy to jump out of the local optimum. In order to verify the improvement effect, the improved algorithm is used to solve the FIR filter design problem. Simulation results show that compared with the originalHHO, the FIR filter based on the improved algorithm has more ideal passband and stopband performance.Keywords: FIR filter; Harris Hawks Optimization; Logistic chaos mapping; nonlinear escape energy factor1 引言(Introduction)作为数字信号处理的基本技术,有限脉冲响应(Finite Impulse Response, FIR)滤波器在图像、音频、模式识别等方面得到了广泛应用。
NVIDIA Mellanox Quantum HDR 200G InfiniBand 交换机芯片数
NVIDIA MELLANOX QUANTUM HDR 200G INFINIBAND SWITCH SILICONNVIDIA® Mellanox® Quantum™ switch silicon offers 40 ports supporting HDR 200 Gb/s InfiniBand throughput per port, with a total of 16 Tb/s bidirectional throughput and 15.6 billion messages per second.Mellanox Quantum is the world’s smartest network switch that enables in-network computing through the co-design Scalable Hierarchical Aggregation and Reduction Protocol (SHARP)™ technology. Its co-design architecture enables the usage of all active data center devices to accelerate communication frameworks, resulting in an order of magnitude improvement in application performance and enabling the highest performing server and storage system interconnect solutions for Enterprise Data Centers, Cloud Computing, High-Performance Computing, and Embedded environments.Mellanox Quantum embeds an innovative solution called SHIELD™ (Self-Healing Interconnect Enhancement for Intelligent Datacenters) that makes the fabric capable of self-healing autonomy. So, the speed at which communications can be corrected in the face of a link failure can be increased by 5000X, making it fast enough to save expensive retransmissions or absolute communications failure.Mellanox Quantum offers industry-leading integration of 160 SerDes lanes, with speed flexibility ranging from 2.5 Gb/s to 50 Gb/s per lane, making this Mellanox switch an obvious choice for OEMs that must address end-user requirements for faster and more robust applications. Network architects can utilize the reduced power and footprint, and a fully integrated PHY capable of connectivity across PCBs, backplanes, and passive and active copper/fiber cables, to deploy leading, fabric-flexible computing and storage systems with the lowest total cost of ownership.Key Features>Industry-leading switch silicon in performance, power and density>Industry-leading cut-through latency >Low-cost solution>Single-chip implementation>Fully integrated PHY>Backplane and cable support>1, 2 and 4 lanes>Up to 16 Tb/s of switching capacity>Up to 15.6 billion messagesper second>Up to 40 HDR 200 Gb/s InfiniBand ports >Collective communication acceleration >Hardware-based adaptive routing>Hardware-based congestion control >Mellanox SHARP™v2 collective offloads support streaming for Machine Learning>SHIELD-enabled self-healing technologyINFINIBAND INTERCONNECTMellanox Quantum InfiniBand devices enable industry standard networking, clustering, storage, and management protocols to seamlessly operate over a single “one-wire” converged network. Combined with the Mellanox ConnectX® family of adapters, on-the-fly fabric repurposing can be enabled for Cloud, Web 2.0, EDC and Embedded environments providing “future proofing” of fabrics independent of protocol. Mellanox Quantum enables IT managers to program and centralize their server and storage interconnect management and dramatically reduce their operations expenses by completely virtualizing their data center network.COLLECTIVE COMMUNICATION ACCELERATIONCollective communication describes communication patterns in which all members of a group of communication endpoints participate. Collective communications are commonly used in HPC protocols such as MPI and SHMEM. The Mellanox Quantum switch improves the performance of selected collective operations by processing the data as it traverses the network, eliminating the need to send data multiple times between endpoints.Mellanox Quantum also supports the aggregation of large data vectors at wire speed to enable MPI large vector reduction operations, which are crucial for machine learning applications.TELEMETRYVisibility is a critical component of an efficient network. Capturing what a network is‘thinking’ or ‘doing’ is the basis for true network automation and analytics. In particular, today’s HPC and cloud networks require fine-grained visibility into:>Network state in real-time>Dynamic workloads in virtualized and containerized environments>Advanced monitoring and instrumentation for troubleshootingMellanox Quantum is designed for maximum visibility using such features as mirroring, sFlow, congestion based mirroring, and histograms.SWITCH PRODUCT DEVELOPMENTThe Mellanox Quantum Evaluation Board (EVB) and Software Development Kit (SDK)are available to accelerate an OEM’s time to market and for running benchmark tests. These rack-mountable evaluation systems are equipped with QSFP56 interfaces for verifying InfiniBand functionality. In addition, SMA connectors are available for SerDes characterization. The Mellanox Quantum SDK provides customers the flexibility to implement InfiniBand connectivity using a single switch device.The SDK includes a robust and portable device driver with two levels of APIs, so developers can choose their level of integration. A minimal set of code is implemented in the kernelto allow for easy porting to various CPU architectures and operating systems, such asx86 and PowerPC architectures utilizing the Linux operating system. Within the SDK, the device driver and API libraries are written in standard ANSI “C” language for easy porting to additional processor architectures and operating systems. The same SDK supportsthe Mellanox SwitchX®-2, Switch-IB®, Switch-IB 2, Mellanox Spectrum®, and Mellanox Quantum switch devices. CompatibilityCPU>PowerPC, Intel x86, AMD x86, MIPS PCI Express Interface>PCIe 3.0, 2.0, and 1.1 compliant>2.5 GT/s, 5 GT/s or 8 GT/s x4link rateConnectivity>Interoperability with InfiniBand adapters and switches>Passive copper cables, fiber optics, PCB or backplanes Management & Tools>Support for Mellanox and IBTA compliant Subnet Managers (SM) >Diagnostic and debug tools>Fabric Collective Accelerator (FCA) software libraryORDERING INFORMATIONCONFIGURATIONSMellanox Quantum allows OEMs to deliver: >40-port 1U HDR 200 Gb/s InfiniBand switch >80-port 1U HDR100 100 Gb/s InfiniBand switch>Modular chassis switch with up to 800 HDR InfiniBand ports >Modular chassis switch with up to 1600 HDR100 InfiniBand portsNVIDIA MELLANOX ADVANTAGENVIDIA Mellanox is the leading supplier of industry standard InfiniBand and Ethernet network adapter silicon and cards (HCAs and NICs), switch silicon and systems,interconnect products, and driver and management software. Mellanox products have been deployed in clusters scaling to tens of thousands of nodes and are being deployed end-to-end in data centers and TOP500 systems around the world.SpecificationsInfiniBand>IBTA Specification 1.4 compliant >10, 20, 40, 56, 100 or 200 Gb/s per 4X port>Integrated SMA/GSA>Hardware-based congestion control>256 to 4 KB MTU >9 virtual lanes:8 data +1 managementI/O Specifications>SPI Flash interface, I 2C>IEEE 1149.1/1149.6 boundary scan JTAG>LED driver I/Os>General purpose I/Os >55 x 55 mm HFCBGALearn more at /products/infiniband-switches-ic/quantum© 2020 Mellanox Technologies. All rights reserved. NVIDIA, the NVIDIA logo, Mellanox, Mellanox Quantum, Mellanox Spectrum, SwitchX, SwitchIB, ConnectX, Scalable Hierarchical Aggregation and Reduction Protocol (SHARP) and SHIELD are trademarks and/or registered。
基于双正交基字典学习的图像去噪方法
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湖北科技学院学报
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在算法中具体的步骤包括初始化、训练学习、理
刘伟华1,刘聪*2
(1.湖北科技学院 五官医学院,湖北 咸宁437100;2.湖北科技学院 学报编辑部,湖北 咸宁437100)
摘 要:在新时期环境下,人们对图像质量的要求越来越高,但图像在产生和获取期间往往会受到
诸多因素的影响,对其质量产生损坏。其中噪声是对图像产生干扰的一种原因,图像实际应用可能
想字典B的输出。
在初始化环节中,令K等于0,且基于噪声图像 对图像块级内样本的训练集Z = {z1,z2,z3,--, Zm }构建,其中M表示样本数;选取两个正交的变换 基进行初始化超完备的字典2构造。
在训练学习的环节中,K等于K + 1,表示迭代
的次数,首先针对图像块内样本的训练集全部样本,
按照超完备的字典D,通过正交匹配的追踪算法对
基于音频特征的半脆弱水印方案
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被提取 。
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生 的各种失真变换或 者恶 意攻击 的情况下 都具 备很高 的抵 抗能力 。鲁棒水 印要对各 种攻击 都有 很高 的抵抗性 。文献 [3给 出了一种基 于混沌 加密和 重复码 的复倒 频谱 的音频 4 水 印算法 ,该算 法首先 把音频 信号分 帧 ,对每 一帧实 施复 倒谱变换嵌 入二值 图像 ,而 后利用混 沌序 列对其 加密 ,并 用 重复码进行 纠错后嵌入 到原始音频 的复倒谱系数 中。 半脆弱水 印的脆弱性 是有选 择 的 ,它 仅对 一部分 特定 的操作 方法具备 鲁棒 性 ,对表现 载体 内容特性 的数 据改变 有 敏感 性 ,所 以半脆 弱水 印既具 有鲁棒 性又具 有脆 弱性 的 特征 。近年来 ,基于 图像 的半 脆弱水 印研 究较 多 ,取得 了
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长 为 N。
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1 2 音频 特 征 的提 取 .
维数组及其 幅值 的关系
音频的特征分为 时域特 征和频 域特征 。时域特 征主 要
表现在平均 能量 、短 时过零率 、共 振 峰、基 因周期 等 ,频 域特征主要表现 在线 性预 测系数 ( P ) P倒频谱 系 数 L C 、L
一种新颖的用于图像内容认证、定位和恢复的半脆弱数字水印算法研概要
第4期2010年4月电子学报ACrAⅡ正a11t0NICASIMCAVd.38No.4Apr.2010一种新颖的用于图像内容认证、定位和恢复的半脆弱数字水印算法研究段贵多1,赵希2,李建平1,廖建明1(1.电子科技大学计算机科学与工程学院,四川成都610054;2.DepartmentofComputing,University0fSI珊ey,Guildford,GU27XH,UK)摘要:本文提出了一种半脆弱,分块和基于内容的数字水印技术.该算法可以准确的实现篡改区域的认证,定位和恢复.算法基于独立分块技术将用于认证的水印比特嵌入到每个块的Slant变换域的中频区域.嵌入过程是基于我们通过实验发现大部分的Slant中频系数的正负符号在非恶意操作前后保持不变这一性质.在恢复系统中,恢复比特来源于原图压缩后的数据并将此数据嵌入到图像的最低有效位以实现自恢复.认证度由虚警检测率和误警检查率测定.仿真实验表明我们的算法能够准确的检测和定位出篡改区域并能实现篡改区域的近似恢复.另外,与基于DCT和PST变换的算法相比,我们的算法能够更有效的抵抗一些恶意和非恶意操作同时实施的操作.关键词:半脆弱水印;图像认证;恢复中图分类号:TP309.2文献标识码:A文章编号:0372.2112(2010)04-0842.06ANovelSemi—fragileDigitalWatermarkingAlgorithmforImageContentAuthentication,LocalizationandRecoveryDUMqCui.du01,ZHAOXi2,LIJian.pin91,LIAOJian—ming(1.Sdwdof凸哗S豳.nmandEngineering,UniversityofE/eartm/c溉andTechndogyofCh/na,S/dmanc^啦,610054,O=/na;2.OWon,,刎ofCo.删ing,UrgversityofSurrey,Guddford,GU27XH,UK)Abstract:Asemi-fragile,block-wiseandcontent-basedwatermarkingmethodfortamperdetectionandrecoveryisgesentedinthispaper.Thenon-overlappingblocksarcusedandthewatermarkbitsforauthenticationareembeddedintothemiddlefrequencyregionofeachblockintheSTSlantTransformdomain.Theembeddingp[ocessisbasedonthediscoverywhichthesignoftheIIlostSTcoefficientsmaintaininvariant.Fortherecoverymechanism,therecoverybitsgeneratedfromthecompressedoriginalinlageareembeddedintotheleastsignificantbits(LsB)ofthewatel/narkedimage.Thedegreeoftheauthenticityismeasuredbythefalseposidvede删∞rateandfalsenegativedetectionrate.Simulationresultsdemonstratedthatourmethodisablet0accuratelydetectandlocalizethetampcredregionaswellasapproximatelyi'll?overit.Furthermore,asc0I呷arewiththeDcrandPsTbasedschemes,ourproposedmethodobtainsbetterperformancewhenbothmaliciousandnon-maliciousmanipulationsarcappliedtogeth-er.Keywords-.s删一仃ag.dewat岛marI(;imageauthentication;recovery1引言过去的十多年里,由于Internet和软件工具的迅速发展使得网络信息的复制和修改变得极其容易.如何保护这些信息内容的完整性和真实性成为了当前迫切需要解决的问题之一.传统的数字签名技术虽然能够达到内容认证的目的,但数字签名作为附加信息随原作品信息传递的方式,使得作品信息一旦发生格式改变,签名就很容易丢失,从而造成认证的失败.更重要的是数字签名无法实现篡改区域的定位和恢复,而知道篡改位置和内容具有实际应用的价值.脆弱和半脆弱水印技术是数字签名技术的一个有效补充,他们在多媒体信息内容认证,定位和恢复中已发挥了重要的作用.脆弱水印技术uoJ是一种最敏感的水印技术,它不允许作品信息有任何的改动,甚至是一个比特的改动.然而,随着由传输和存储引起的轻微的信号处理操作,诸如JPEG压缩,加噪,被认为是可接受而且是需要的操作后,半脆弱水印更适合于实际应用的收稿日期:2009-02-12;修回日期:2009-04-28基金项目:国家863高技术研究发展计划(No.2007AA0128423);国家自然科学基金(No.60703113)万方数据第4期段贵多:一种新颖的用于图像内容认证、定位和恢复的半脆弱数字水印算法研究843需要,吸引了众多研究者的注意.半脆弱水印技术能够检测到对信息内容的恶意操作而允许非恶意操作通过.过去的十几年里,研究者们提出了许多用于图像内容认证的半脆弱水印的算法H一0l,这些算法大致可以分为空域算法和变换域算法.空域算法常采用最低有效位(LSB)算法,其算法简单,易于实现.但由于空域算法对非恶意操作的鲁棒性较差,所以变换域的算法更符合实际应用的需求.常见的变换域算法有基于离散余弦变换(D(T)[5,6|,刚7]和离散小波变换(DWT)E8枷].一种典型的DCT域的半脆弱水印算法是h和‰提出的bJ.该算法不仅能够检测和定位篡改区域,还能够较好的抵抗JPEG压缩操作(QF=50).然而关于其他非恶意操作的抵抗情况文中并未涉及.文献[7]中Ho等提出了一种基于PST变换的半脆弱水印算法,算法采用的是典型的独立分块技术,并利用文献[4]中的自恢复方法实现了篡改区域的近似恢复.实验结果证明,与传统的基于DCT变换的算法相比,基于PST的算法有一定的优越性.最近,研究者们集中研究了基于DWT的半脆弱水印算法旧00|,这是因为DWT在空间域和频域具有良好的局部化特性使得认证过程不再需要分块技术即可实现.今后,我们期望使用DWT技术提高篡改检测的精确度.本文基于Slant变换提出了一种半脆弱水印算法,选择Slant变换主要是基于以下考虑:(1)Slant变换已经在图像编码中展示了优越性u川,它能够显著地减少带宽,从而对于一般大小的图像块编码具有更少的均方误差;(2)基于Slant变换的编码方法比基于其他的酉计算方法所得到的图像质量更好;(3)类似于Walsh.Hadamard变换,Slant变换在能量压缩方面是次最优的[16],这点对于水印信息隐藏在中高频的扩频中是及其有利的m1;(4)根据实验,ST域中大多数的中频系数的正负符号在JPEG压缩和Gussian加噪前后保持不变,利用这个重要的性质,我们通过调节系数值完成水印的嵌入.另外,在一些现存的算法中【13.14|,研究者们主要注重单个的操作,如JPEG压缩,复制和粘贴操作,但在实际应用中,图像更有可能的是同时经历这些操作.另外,很多算法[7,15]只注重误警检测率(P即),很少提及虚警检测率(P刚),但我们认为两者的同时考虑有助于提高算法的准确性.基于以上考虑,我们选择8×8大小的独立分块技术.虽然独立分块技术存在安全性和分块大小与检测精度有关的问题,但不失为一种简单可行的好办法.图像首先被分成了互不重叠的8×8的小块,然后对每个小块实施Slant变换,并将用于认证的水印比特嵌入到每个块的Slant变换域中的中频区域.在恢复系统中,恢复比特来源于原图压缩后的数据并将此数据随机嵌入到图像的最低有效位以实现自恢复.认证度由P伊和P州测定.2算法分析2.1Slant变换简介Slant变换的正反变换可以表述如下:[V]=[曲][U][曲]1f1、[U]=[&]’[y][&]其中,[u]代表原图,其大小为NXN,[y]表示变换后的矩阵,[曲]为NXN的酉Slant矩阵,其表示如图1.1以二0{。
检测超低频突变的方法:DuplexSequencing
检测超低频突变的⽅法:DuplexSequencing⽂章题⽬:Detecting ultralow-frequency mutations by Duplex Sequencing研究⼈员:来⾃华盛顿⼤学的Scott R Kennedy和Michael W Schmitt等⼈发表时间:2014. 10期刊名称:Nature Protocols影响因⼦:10.032研究背景⼆代测序技术应⽤以来,凭借着低成本,⾼效率等优点,使得临床医学和基础科研领域取得了⾰命性的变化和进展。
但是在产⽣数以亿计测序数据的同时,也伴随着约1%的错误率存在。
这个问题在不同的分析应⽤中产⽣的影响迥异,例如在分析肿瘤亚克隆和罕见突变上影响⽐较明显。
为了克服⼆代测序错误率偏⾼的局限性,来⾃华盛顿⼤学的Scott R Kennedy和Michael W Schmitt等⼈开发出Duplex Sequencing的测序分析⽅法。
Duplex Sequencing基于⼆代测序技术原理,通过独⽴的添加标签到reads两端,使得互补的两条单链通过PCR扩增形成⼀个可以通过唯⼀标签识别的reads家族,再利⽤单链矫正和双链互相矫正的⽅法排除错误,减⼩错误率(见图1)。
众所周知,如果两条互补链是完整的,那么真的突变应该在两条链上都有发⽣,相反如果是PCR或着是测序过程产⽣的随机错误则只会发⽣在⼀条链上。
⽽对于那些只发⽣在⼀条链上突变,很可能是DNA双链完整性遭到破坏导致的,后续可⽤来分析DNA损伤发⽣的位点情况。
本⽂主要介绍基于Duplex Sequencing测序的信息分析流程的使⽤。
图1 Duplex Sequencing 原理⽰意图Duplex Sequencing的特性Duplex Sequencing优势:1、准确度⾼(可检测到5 × 10-8 突变频率的突变)2、消除由于DNA损伤和降解以及PCR和测序过程中引⼊的错误。
Infineon TLI4971高精度无核电流传感器说明书
TLI4971 high precision coreless current sensor for industrial applications in 8x8mm SMD packageFeatures & Benefits∙ Integrated current rail with typical 220µΩ insertion resistance enables ultra-low power loss∙ Smallest form factor, 8x8mm SMD, for easy integration and board area saving∙ High accurate, scalable, DC & AC current sensing ∙ Bandwidth typical 240kHz enables wide range of applications∙ Very low sensitivity error over temperature (< 2.5%) ∙ Galvanic functional isolation up to 1150V peak V IORM ∙ V ISO 3500V RMS agency type-tested for 60 seconds per UL1577∙ Differential sensor principle ensures superior magnetic stray field suppression∙ Two independent fast Over-Current Detection (OCD)outputssCoreless current sensor in PG-TISON-8 packageDescriptionTLI4971 is a high precision miniature coreless magnetic current sensor for AC and DC measurements with analog interface and two fast over-current detection outputs.Infineon's well-established and robust monolithic Hall technology enables accurate and highly linear measurement of currents with a full scale up to ±120A. All negative effects (saturation, hysteresis) commonly known from open loop sensors using flux concentration techniques are avoided. The sensor is equipped with internal self-diagnostic feature.Typical applications are electrical drives and general purpose inverters.The differential measurement principle allows great stray field suppression for operation in harsh environments.Two separate interface pins (OCD) provide a fast output signal in case a current exceeds a pre-set threshold.The sensor is shipped as a fully calibrated product without requiring any customer end-of-line calibration.All user-programmable parameters such as OCD thresholds, blanking times and output configuration modes are stored in an embedded EEPROM memory.2) Semi-differential mode, non-ratiometric output sensitivityPin ConfigurationFigure 1 Pin layout PG-TISON-8-5The current I PN is measured as a positive value when it flows from pin 8 (+) to pin 7 (-) through the integrated current rail.Pin configurationTarget ApplicationsThe TLI4971 is suitable for AC as well as DC current measurement applications: ∙ Electrical drives∙ General purpose inverters ∙ Chargers∙ Current monitoring∙ Overload and over-current detection ∙ etc.Due to its implemented magnetic interference suppression, it is extremely robust when exposed to external magnetic fields. The device is suitable for fast over-current detection with a configurable threshold level. This allows the control unit to switch off and protect the affected system from damage, independently from the main measurement path.1 2 3 456 78+- I PNGeneral DescriptionThe current flowing through the current rail on the primary side induces a magnetic field that is differentially measured by two Hall probes. The differential measurement principle of the magnetic field combined with the current rail design provides superior suppression of any ambient magnetic stray fields. A high performance amplifier combines the signal resulting from the differential field and the internal compensation information provided by the temperature and stress compensation unit. Finally the amplifier output signal is fed into a differential output amplifier which is able to drive the analog output of the sensor.Depending on the selected programming option, the analog output signal can be provided either as: ∙Single-ended∙Fully-differential∙Semi-differentialIn single-ended mode, the pin VREF is used as a reference voltage input. The analog output signal is provided on pin AOUT. In fully-differential mode, both AOUT (positive polarity) and VREF (negative polarity) are used as signal outputs whereas VDD is used as reference voltage input. Compared to the single-ended mode, the fully-differential mode enables doubling of the output voltage swing.In semi-differential mode a chip-internal reference voltage is used and provided on VREF (output). The current sensing information is provided in a single-ended way on AOUT.For fast over-current detection, the raw analog signal provided by the Hall probes is fed into comparators with programmable switching thresholds.A user-programmable deglitch filter is implemented to enable the suppression of fast switching transients. The open-drain outputs of the OCD pins are active “low” and they can be directly combined into a wired-AND configuration on board level to have a general over-current detection signal.All user-programmable parameters such as OCD thresholds, deglitching filter settings and output configuration mode are stored in an embedded EEPROM memory.Programming of the memory can be performed in the application through a Serial Inspection and Configuration Interface (SICI). The interface is descripded in detail in the programming guide which can be found on the Infineon webside. Please contact your local Infineon sales office for further documentation. Standard Product Configuration∙The pre-configured full scale range is either set to ±120A, ±75A, ±50A or ±25A depending on the choosen product variant.∙The pre-configured output mode is set to semi-differential mode.∙The quiescent voltage is set to 1.65V.∙The OCD threshold of channel 1 is set to the factor 1.25 of the full scale range.∙The OCD threshold of channel 2 is set to the factor 0.82 of the full scale range.∙The pre-defined setting of the OCD deglitching filter time is set to 0µs.∙The sensor is pre-configured to work in the non-ratiometric mode.∙The sensitivity and the derived measurement range (full scale) can be reprogrammed by user according to the sensitivity ranges listed in Table 4.∙The sensor can be reprogrammed into single-ended operating mode or fully-differential mode by user without any recalibration of the device.∙The OCD thresholds and filter settings can be reprogrammed by the user according to the values listed in Table 6 and Table 7.∙For semi-differential uni-directional mode or ratiometric output sensitivity, please contact your local Infineon sales office.Block DiagramThe current flowing through the current rail on the primary side induces a magnetic field, which is measured by two Hall probes differentially. The differential measurement principle provides superior suppression of any ambient magnetic stray fields. A high performance amplifier combines the signal resulting from the differential field and the compensation information, provided by the temperature and stress compensation unit. Finally the amplifier output signal is fed into a differential output amplifier, which is able to drive the analog output of the sensor.Absolute Maximum RatingsTable 1 Absolute Maximum RatingsThermal equilibrium reached after 2 min.2)Tested with primary nominal rated current of 70A rms on Infineon reference PCB at High Frequency (HF).Thermal equilibrium reached after 2 min.3)Human Body Model (HBM), according to standard AEC-Q 100-0024)Accor ding to standard IEC 61000−4−2 e lectrostatic discharge immunity testStress above the limit values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the integrated circuit.Product Characteristics Table 2 Operating RangesTable 3 Operating ParametersFunctional Output DescriptionThe analog output signal depends on the selected output mode:∙Single-ended∙Fully-differential∙Semi-differentialSingle-Ended Output ModeIn single-ended mode VREF is used as an input pin to provide the analog reference voltage, V REF. The voltage on AOUT, V AOUT, is proportional to the measured current I PN at the current rail:V AOUT(I PN)=V OQ+S∙I PNThe quiescent voltage V OQ is the value of V AOUT when I PN=0. V OQ tracks the voltage on VREFV OQ(V REF)=V REFThe reference voltage can be set to different values which allow either bidirectional or uniderictional current sensing. The possible values of V REFNOM are indicated in Table 2.The sensitivity is by default non ratiometric to V REF. If ratiometricity is activated the sensitivity becomes as follows:S(V REF)=S(V REFNOM)∙V REF V REFNOMFully-Differential Output ModeIn fully-differential output mode, both VREF and AOUT are analog outputs to achieve double voltage swing: AOUT is the non-inverting output, while VREF is the inverting output:V AOUT(I PN)=V QAOUT+S∙I PNV REF(I PN)=V QREF−S∙I PNThe quiescent voltage is derived from the supply pins VDD and GND and has the same value on both AOUT and VREF:V QAOUT(V DD)=V QREF(V DD)=V DD2The sensitivity in the fully-differential mode can begenerally expressed as:S(V DD)diff=S(3.3V)diff∙V DD3.3VIn this mode, the quiescent voltages and thesensitivity are both ratiometric with respect to V DDif ratiometricity is enabled.Semi-Differential Output ModeIn semi-differential output mode, the sensor isusing a chip-internal reference voltage to generatethe quiescent voltage that is available on pin VREF(used as output).The analog measurement result is available assingle-ended output signal on AOUT. Thedependence of sensitivity and output offset onreference voltage is the same as described in single-ended output mode.The quiescent voltage is programmable at 3different values, V OQbid_1and V OQbid_2forbidirectional current and V OQuni for unidirectionalcurrent (see Table 4).Total error distributionFigure 3 shows the total output error at 0h (E TOTT)and over lifetime (E TOTL) over the full scale range forsensitivity range S1 (10mV/A).Table 4 Analog Output Characteristics2) Can be programmed by user.3) Values refer to semi-differential mode or single-ended mode, with VREF =1.65 V. In fully-differential mode the sensitivity value is doubled.4) Not subject to production test. Verified by design and characterization.5) Typical value in fully-differential mode, sensitivity range S66) Noise Density=RMS√ π2 ∗ BW[Hz]1Sensitivity[VA]Table 4 Analog Output Characteristics (cont’d)Fast Over-Current Detection (OCD)The Over-Current Detection (OCD) function allows fast detection of over-current events. The raw analog output of the Hall probes is fed directly into comparators with programmable switching thresholds. A user programmable deglitch filter is implemented to enable the suppression of fast switching transients. The two different open-drain OCD pins are active low and can be directly combined into a wired-AND configuration on board level to have a general over-current detection signal. TLI4971 supports two independent programmable OCD outputs, suited for different application needs.The OCD pins are providing a very fast response, thanks to independence from the main signal path. They can be used as a trap functionality to quickly shut down the current source as well as for precise detection of soft overload conditions.OCD pins external connectionThe OCD pins can be connected to a logic input pin of the microcontroller and/or the gate-driver to quickly react to over-current events. They are designed as open-drain outputs to easily setup a wired-AND configuration and allow monitoring of several current sensors outputs via only one microcontroller pin. OCD thresholdsThe symmetric threshold level of the OCD outputs is adjustable and triggers an over-current event in case of a positive or negative over-current. The possible threshold levels are listed in Table 6 and Table 7. The instruction for the settings is documented in the TLI4971 programming guide. OCD outputs timing behaviorBoth output pins feature a deglitch filter to avoid false triggers by noise spikes on the current rail. Deglitch filter settings can be programmed according to application needs. Available options are listed in Table 6 and Table 7.Figure 4 shows the OCD output pin typical behavior during an over-current event.Over-current Pulse 1: duration exceeds the over-current response time t D_OCDx + response time jitter Δt D_OCDx + deglitch filter time t deglitch. The OCD output voltage is set low until the current value drops below the OCD threshold.Over-current Pulse 2: duration does not exceed the over-current response time t D_OCDx and therefore no OCD event is generated.Over-current Pulse 3: duration exceeds the response time t D_OCDx + response time jitter Δt D_OCDx, but does not exceed the glitch filter time t deglitch and no OCD event is generated.Fast Over-Current Detection (OCD) Output ParametersTable 5 Common OCD Parameters2) Can be programmed by user.3) Pre-configured threshold level4) Time between primary current exceeding current threshold and falling edge of OCD1-pin at 50%.5) Not subject to production test. Verified by design and characterization.6) The specified deglitching timing is valid when input current step overtakes the threshold of at least 10%.2) Can be programmed by user.3) Pre-configured threshold level.4) Time between primary current exceeding current threshold and falling edge of OCD2-pin at 50%.5) Not subject to production test. Verified by design and characterization.6) The specified deglitching timing is valid when input current step overtakes the threshold of at least 10%.Undervoltage / Overvoltage detectionTLI4971 is able to detect undervoltage or overvoltage condition of its own power supply (V DD). When an undervoltage (V DD<U VLOH) or overvoltage (V DD>O VLOH) condition is detected both OCD pins are pulled down in order to signal such a condition to the user.The undervoltage detection on OCD pins is performed only if V DD > V DD,OCD.Both OCD pins are pulled down at start up. When V DD exceeds the undervoltage threshold U VLOH_R and the power on delay time t POR has been reached, the sensor indicates the correct functionality and high accuracy by releasing the OCD pins.Isolation CharacteristicsTLI4971 conforms functional isolation.2) After stress test according to qualification plan.3) Not subject to production test. Verified by design and characterization.4) Agency type tested for 60 seconds by UL according to UL 1577 standard.System integrationFor bandwidth limitation an external filter is recommended as shown in the above application circuits.Typical Performance CharacteristicsFigure 8 Typical error in sensitivity over temperature Figure 9 Typical offset drift over temperaturePackageThe TLI4971 is packaged in a RoHS compliant, halogen-free leadless package (QFN-like). PG-TISON-8 Package OutlineRevision HistoryMajor changes since the last revisionPublished byInfineon Technologies AG 81726 München, Germany © 2021 Infineon Technologies AG. All Rights Reserved.Do you have a question about this document?Email: ********************Document reference IMPORTANT NOTICEThe information given in this document shall in no event be regarded as a guarantee of conditions or chara cteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.The data contained in this document is exclusively intended for technically trained staff. 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For information on the types in question please contact your nearest Infineon Technologies office.Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.Edition 12-02-2021----Trademarks of Infineon Technologies AGµHVIC™, µIPM™, µPFC™, AU -ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI -POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my -d ™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO -SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners.。
ultralow_residue_semiconductor_grade_fluxes_for_copper_pillar_flip-chip_indium_0
Thinner packages warp more
Taken from: K. Lee, "Mobile platform packaging challenges," iNEMI workshop, Nagoya, Japan 2009, pp. 9 and 10
The End of Flip-Chip Flux Cleaning?
Many challenges impact flip-chip assembly
Taken from: International Technology Roadmap for Semiconductors (ITRS) 2013 /Links/2013ITRS/2013TableSummaries/2013AP._SummaryTable.pdf
• Thermogravimetric analysis (TGA)
– Solderability
• Wetting
– Holding die in place
• Movement during reflow (MDR)
– Compatibility with MUF/CUF
Semiconductor Roadmap: Packaging Challenges in 2010s
Roadmap Challenges: Mobile Devices
Old and current solder bump technology
Single Chip Package Technology Requirements for Mobile Devices Year of Mass production = 2014 2016 2018 2020 Units Transistor (T1) MPU 1/2 Physical Gate Length after etch 18 15 13 11 nm Wafer Die thickness - Extremely thin packages (minimum) 10 5 5 5 microns Cost per I/O for OSAT production (minimum cost) 0.36 0.34 0.32 0.3 (USD$/pin/100) Chip Area 100 100 100 100 mm^2 Mobile Device Package pin count (maximum) 207 - 1100 218 - 1150 252 - 1150 278-1150 number of I/O Packages Package profile or thickness (minimum) 0.22 - 0.40 0.20 - 0.35 0.19 - 0.35 0.19 - 0.35 mm Junction temperature - Tj (maximum) 105 105 105 105 degC Operating temperature - ambient (maximum) 45 45 45 45 degC
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2060IEEE PHOTONICS TECHNOLOGY LETTERS,VOL.16,NO.9,SEPTEMBER 2004Ultralow-Loss18Splitter Based on Field Matching Y JunctionJ.Gamet and G.PandraudAbstract—A novel approach to anultralow-loss junction is introduced and designed.By adding a succession of low index regions with properly chosen parameters in the straight waveguide before the branching region,the field mismatch is improved with a power presplitting effect.In order to show that effect we fabri-cated,tested,and compared18splitters formed by cascadedconventional branches and the proposed fieldmatching branch.Index Terms—Optical planar waveguide components,powersplitters,branch.I.I NTRODUCTIONTHE junctions are fundamental elements for integrated optical devices.They are used as power divider–combiner in power splitters and in interferometric devices like modula-tors,switches,and attenuators.Recently,splitters have attracted a growing interest as fundamental building blocks of passive optical networks [1].Silica-on-silicon waveguides have superior advantages such as low propagation losses (typically lower then 0.1dB/cm)and are ideal to realize different functions on the same chip [2].The major limitation whendesigning junction on such a platform is the transmission losses due to the minimum width of the gap between the two branching waveguides limited by photolithog-raphy and etching processes.The excess losses then generated are generally not suitable for practical applications.In this letter,we propose a new way ofdesigningjunc-tions for high index contrast silica-on-silicon waveguides.Wewill show that theproposedjunction,while used in a18splitter,can meet the stringent requirements of low polariza-tion-dependent loss (PDL)and low insertion loss uniformity.II.D ESIGN AND F ABRICATIONSegmented waveguides have shown [3]that they can help re-duce the insertion loss of integrated optical circuits.The segmentation increases the propagating mode field allowing a perfect matching with standard optical fibers.Fig.1(a)shows aconventionaljunction.It is well known that thegap between the two branching waveguides should be no less than2m when a plasma-enhanced chemical vapor deposition (PECVD)process is used to deposit the cladding layer (otherwise there may exist air voids at the tip ofthe branch).This gap influences the coupling between the incomingManuscript received April 29,2004;revised May 25,2004.J.Gamet is with Opsitech,S.A.,38000Grenoble,France.G.Pandraud is with Electronic Instrumentation Laboratories,TU Delft,Delft 2628CD,The Netherlands (e-mail:g.pandraud@ewi.tudelft.nl).Digital Object Identifier10.1109/LPT.2004.833071Fig.1.(a)Conventional Y junction and (b)the proposed lowloss.Fig.2.Normalized simulated fields at the end of the segmented section for transverse-electric polarization.guided mode and the output “supermode”but by introducing a segmentation [Fig.1(b)]a pre-splitting occurs improving the matching with the double-peaked intensity profile of the two output ing the beam propagation method [4],we carefully adjusted theparametersand of the segmented section.In order to find the minimum excess loss,we calculated the excess loss for a range of parameters (,)and varying the number of periods.The lowest excess loss has a minimal valueof 0.09dB for 13periods,whenm,m.Fig.2shows the fields obtained by simulation before the branching waveguides for the proposed optimized transition (gray line),the two outputs (double-peak profile),and the input waveguides.Residual losses still come from the mismatch in the center but for a fixed number of periods,the excess loss remains lower than 0.15dB (for any combination (,)ensuring a good fabrication tolerance.The theoretical excess loss ofthe junction without segmentation is 0.4dB.In order to test the presented optimal design,we fabricated18splitters.A straight and a bent waveguide are added to the photolithographic die to provide references.The18splitters with theoptimized branch are 33mm long and 2.25mm wide.1041-1135/04$20.00©2004IEEEGAMET AND PANDRAUD:ULTRALOW-LOSS18SPLITTER BASED ON FIELDMATCHING JUNCTION2061parison between 128splitters with segmented junction and without.18splitters without segmentation have also been placed on the same mask and have the same size.The fabrication process uses a PECVD process to deposit thesilica layers.Atm,the claddingindex is 1.444and the coreindex1.454.The waveguide core layer height is4.5m and the width is de fined by lithography as6.5m.The cladding is deposited in three steps of6m (to ensure optical isolation)and then heated up at high temperature.This process is required as the PECVD tech-nique introduces hydrogen that causes losses around1.5m.When designing wide spectrum devices,such loss has to be avoided.To reduce losses due to the curved waveguides,the minimum bent radius is kept higher than 8mm.The other parameters are the same as the one for the numerical example depicted in Fig.2.The refractive indexes of the segmented sectionareand ,alternatively.Thegap for thenonsegmented branch is also2m.Optical paths are designed using P-curves family combining loss optimization and widening at the interface between curved and straight waveguides to minimize PDL and excess loss [5].III.R ESULTSAsconventional branch are described as wavelength insen-sitive and widely used for wavelength-dense-multiplexing com-munication systems [6],the wavelength responses of the18splitters were characterized for comparison.The18splitters have been pigtailed with standard SMF28fibers (an-eight fiber block is used at the output).The light from a white light source is then launched into the devices and the alignment performed (according to the energies collected in all the output waveguides).A scan in wavelength is performed for a random state of polarization.Fig.3shows,for the eight outputs,the output power versus the wavelength for the improved and the conventional18splitters.The wavelength window for optical communicationscovers -bandand -band,in the range of 1528–1620nm,but the light source used here allowed us to go down to 1200nm.Inthe -and -band,both splitters have a flat response and can be considered as wavelength insensitive,but the18splitters using theproposed branch outperform the conventionaloneFig.4.Loss comparison between 128splitters and reference waveguides.:nonsegmented 128splitters.:segmented 128splitters.4:curved waveguide. :straightwaveguide.Fig.5.PDL of the 128splitter with the optimized Y junction.by about 1dB.In Fig.3,the total losses are presented and in-clude coupling loss.Numerical simulations presented in the previous section showed that the “supermode ”matches the incoming beamfor theproposedbranch.That is not the case anymore for theconventionaljunction and,theoretically,the 1dB is con firmed.When moving toward 1200nm,the18splitters with fieldmatchingbranches outperform the conventional splitter by about 3dB.Numerical simulations show once again a shift of the “supermode ”while moving to lower wavelengths increasing then the mode mismatch.Furthermore,when comparing theproposed branch with those using multimode transition section [7],the same mode distortion is observed (as the multimode interference MMI is highly wavelength dependent).Here,we have obtained a flat-tened response other the entire scanned spectrum.We have then averaged the eight output powers and compare them with the losses given by the straight and curve reference waveguides.Fig.4gives the total loss including the coupling loss (the fiber-to-fiber loss has been here subtracted).The new18splitters provide an excess loss of 0.4dB from the straight waveguide and part of it can be attributed to the curved sections.We are currently investigating new designs to reduce that but,as we saw in Fig.2,there is a limit as the segmented section does not perfectly match the branching waveguides mode pro file.Finally,we concentrated on the PDL and measured it (Fig.5)for the eight outputs over a scanned wavelength range.The PDL2062IEEE PHOTONICS TECHNOLOGY LETTERS,VOL.16,NO.9,SEPTEMBER 2004is calculated based on four scans at orthogonal states of polar-ization,using Mueller matrix algorithms in the optical commu-nications wavelength window.The worst value over the scanned wavelength window is 0.25dB.IV .C ONCLUSIONWe have designed,fabricated,and tested a18splitter based on newly lowloss junction.A gain of about 3dB in the low wavelengths range has been observed as well as a very low ex-cess loss.Finally,the PDL remains lower than 0.5dB on the optical communications wavelength window satisfying network designer requirements.R EFERENCES[1] C.R.Giles,C.Doerr,M.Zirngibl,C.Joyner,U.Koren,K.F.Dryer,J.Zyskind,J.Sulhoff,L.Stulz,and L.C.Wolf,“1.8petabit/s downstream capacity WDM passive optical network,”in Proc.Optical Fiber Com-munication (OFC’97),vol.4,Sept.1997,pp.22–25.[2]Y .Yamada,S.Suzuki,K.Moriwaki,Y .Hibino,Y .Tohmori,Y .Akatsu,Y .Nakasuga,T.Hashimoto,H.Terui,M.Yanagisawa,Y .Inoue,Y .Aka-hori,and R.Nagase,“Application of planar lightwave circuit platform to hybrid integrated optical WDM transmitter/receiver module,”Electron.Lett.,vol.31,pp.1366–1367,1995.[3]Z.Weissman and I.Hendel,“Analysis of periodically segmented wave-guide mode expanders,”J.Lightwave Technol.,vol.13,pp.2053–2058,Oct.1995.[4]R.Scarmozzino,A.Gopinath,R.Pregla,and S.Helfert,“Numericaltechniques for modeling guided-wave photonic devices,”IEEE J.Select.Topics Quantum Electron.,vol.6,pp.150–162,Jan./Feb.2000.[5] douceur and beye,“A new general approach to optical wave-guide path design,”J.Lightwave Technol.,vol.13,pp.481–492,Mar.1995.[6]M.N.Kham,R.Monnard,ler,E.C.Burrows,and C.A.Burrus,“A novel high-speed and wavelength insensitive Y branch modulator with reduced and controllable chirp,”IEEE Photon.Technol.Lett.,vol.11,pp.1247–1249,Oct.1999.[7]Q.Wang,S.He,and L.Wang,“A low-loss Y branch with a multimodewaveguide transition section,”IEEE Photon.Technol.Lett ,vol.14,pp.1124–1126,Aug.2002.。