2SC5390中文资料

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2SC4250中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」

集电极 - 发射极击穿电压 DC电流增益
反向传输电容过渡频率转换增益噪声系数
(Ta = 25°C)
符号
测试条件
ICBO IEBO V (BR) CEO hFE Cre
fT Gce NF
VCB = 25 V, I E = 0 VEB = 3 V, I C = 0 IC = 1毫安,我B = 0 VCE = 10 V, I C = 5毫安 VCB = 10 V, I E = 0, f = 1兆赫 VCE = 10 V, I C = 5毫安 VCC = 12 V, f = 200兆赫,女 L = 260兆赫（图1）
• 请联系您的东芝销售代表了解详细信息,以环境问题,如产品的RoHS指令的兼容性. 请遵守产品使用与规范纳入或使用受控物质,包括但不限于,欧盟RoHS指令的所有适用的法律和法规.东芝对发生违规作为适用的法律和法规而导致的损害或损失不承担任何责任.
5
2007-11-01
• 东芝公司及其子公司和附属公司（统称为“TOSHIBA”）,保留这份文件中更改信息的权利,以及相关的硬件,软件和系统（统称为“产品”）,恕不另行通知.
• 本文档以及任何信息均不得转载未经东芝事先书面许可.即使东芝的书面许可,复制是允许的,只要在没有任何改动/遗漏.
• 虽然东芝的作品不断地提高产品的质量和可靠性,产品会发生故障或失败.客户负责符合安全标准和用于提供充分的设计和保障其硬件,软件和这最大限度地降低风险,并避免出现在产品的故障或失效可能导致生命丧失,身体系统人身伤害或财产损失,包括数据丢失或损坏.在创作和制作的设计和使用,客户必须也指,符合（一）中的所有相关信息,东芝的最新版本,包括但不限于本文件, 规格,数据表和应用笔记产品的注意事项和条件中规定的“TOSHIBA 半导体可靠性手册“和（b）对于该产品将与或使用的应用程序的说明.客户全权负责自己的产品设计或应用程序的各个方面,包括但不限于：（a）确定的利用这样的设计或应用该产品的适当性; （b）评价和确定本文档中包含的任何信息的适用性,或图表,图表,程序,算法,示例应用电路,或任何其他引用文件; （三）验证这样的设计和应用的所有运行参数.

2SC5570资料

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE2SC5570HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTIONDISPLAY, COLOR TVHIGH SPEED SWITCHING APPLICATIONSz High Voltage: V CBO = 1700 Vz Low Saturation Voltage: V CE (sat) = 3 V (Max.) z High Speed: t f (2) = 0.1 μs (Typ.)ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)CHARACTERISTIC SYMBOL RATING UNITCollector −Base Voltage V CBO 1700 V Collector −Emitter Voltage V CEO 800 V Emitter −Base Voltage V EBO5 V DC I C 28 Collector Current PulseI CP 56ABase CurrentI B 14 A Collector Power Dissipation P C 220 W Junction Temperature T j 150 °C Storage Temperature RangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC ― JEITA―TOSHIBA 2-21F2A Weight: 9.75 g (typ.)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNITCollector Cut −off Current I CBO V CB = 1700 V, I E = 0 ―― 1 mA Emitter Cut −off CurrentI EBO V EB = 5 V, I C = 0 ― ― 100μAEmitter −Base Breakdown VoltageV (BR) CEO I C = 10 mA, I B = 0 800 ―― Vh FE (1)V CE = 5 V, I C = 2 A 22 ― 48 h FE (2) V CE = 5 V, I C = 8 A 12.5 ― 25 DC Current Gainh FE (3)V CE = 5 V, I C = 22 A 4.5 ― 7.5 ― Collector −Emitter Saturation Voltage V CE (sat) I C = 22 A, I B = 5.5 A ―― 3 VBase −Emitter Saturation Voltage V BE (sat) I C = 22 A, I B = 5.5 A ― 1.0 1.5 V Transition Frequency f T V CE = 10 V, I C = 0.1 A ― 2 ― MHz Collector Output CapacitanceC ob V CB = 10 V, I E = 0, f = 1 MHz ― 470 ― pF Storage Timet stg (1) ― 2.6 3.0Fall Time t f (1) I CP = 10 A, I B1 (end) = 1.4 Af H = 64 kHz― 0.2 0.3 μsStorage Time t stg (2) ― 1.4 1.6Switching TimeFall Timet f (2)I CP = 8 A, I B1 (end) = 1.2 A f H = 130 kHz― 0.10 0.15μsMarkinglead (Pb)-free finish.RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SC3779中文资料(sanyo)中文数据手册「EasyDatasheet - 矽搜」

三洋电机有限公司努力为客户提供高品质高可靠性产品.但是,所有半导体产品都有一定失效概率. 这是可能,这些失败概率会引起事故或事件,危及人生命,这可能会导致冒烟或起火,或可能造成损害其他财产.当设计产品时,必须采用安全指标,这样就不会发生这类事故或事件.这些措施包括但不限于：防护护电路和错误预防电路,用于安全设计,多余设计和结构设计.
在任何或所有SANYO产品（包括技术参数和服务）描述或此处包含在任何适用当地出口管制法律和法规,此类产品控制不得expor特德未取得有关当局exporT许可证情况下按照上述法律.
本出版物任何部分进行复制或以任何形式或通过任何手段,电子或机械,包括影印和录制,或任何信息存储和检索系统,或者以其他方式传播,而不三洋电机有限公司事先书面许可, . 任何和所有描述或所载资料如有恕不另行通知更改因产品/技术提高等.当设计产品时,指是 "交付规范"为SANYO产品,你打算使用. 信息（包括电路图和电路参数）,例如只;它不是批量生产防护证. SANYO任何信息都是准确可靠 ,但不防护证是对其使用武力或以知识产权或其它第三方权利任何侵犯提出或暗示.
Symbol ICBO IEBO hFE fT Cob Cre
FE 如下：
Conditions VCB=12V, IE=0 VEB=2V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz Rank hFE C 40 to 80 D 60 to 120 E 100 to 200
1：基本 2：发射器 3：收藏家三洋：NP 在Ta = 25
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Conditions Ratings 20 12 3 100 40 600 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C

5000种大功率三极管参数查询手册

注
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常用显示器、高清彩电大功率三极管参数
型号功率W 电流A 耐压V 2SC5794 100 25 1600 2SC5801 50 8 1500 2SC5802 50 10 1500 2SC5803 70 12 1500 2SC5811 65 8 1600 2SC5855 50 10 1500 2SC5856 55 14 1500 2SC5859 210 23 1700 2SC5884 30 4 1500 2SC5885 30 6 1500 2SC5899 95 15 1700 2SC5900 80 8 1700 2SC5902 40 9 1700 2SC5904 65 17 1700 2SC5905 50 15 1500 2SC5909 50 15 1500 2SC5912 40 10 1500 2SC5913 40 6 1500 2SC5914 12 1500 2SC5928 13 1500 2SC5931 60 15 1700 2SC5932 140 20 1600 2SC5966 100 20 1700 2SC6012 60 15 1700 备注型号功率W 电流A 耐压V 备 KSC5801 50 16 1500 KSC5802 60 30 1500 KSC5803 70 24 1500 注
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常用显示器、高清彩电大功率三极管参数
型号功率W 电流A 耐压V 2SC4300 75 5 900 2SC4303 80 6 1400 2SC4419 100 6 900 2SC4435 100 15 1500 2SC4441 35 10 600 2SC4518 35 5 900 2SC4532 200 10 1700 2SC4742 50 6 1500 2SC4744 50 6 1500 2SC4745 50 6 1500 2SC4747 50 10 1500 2SC4763 50 8 1500 2SC4766 50 6 1700 2SC4769 60 7 1500 2SC4789 150 25 1500 2SC4795 120 30 400 2SC4796 50 6 1700 2SC4797 50 6 1700 2SC4800 80 5 1500 2SC4803 80 6 1400 2SC4806 50 5 1700 2SC4890 75 12 1500 2SC4891 75 15 1500 2SC4897 150 20 1500 2SC4898 40 5 1000 2SC4916 50 7 1500 2SC4923 70 8 1500 2SC4924 70 10 1500 2SC4927 50 8 1500 2SC4928 150 15 1500 2SC4940 30 4 1200 2SC4941 65 6 1500 2SC4962 50 6 1700 2SC4963 50 8 1700 2SC5002 80 7 1500 2SC5003 80 7 1500 2SC5041 60 7 1600 2SC5042 60 7 1600 2SC5044 70 10 1600 2SC5045 75 15 1600 2SC5046 180 15 1600

三极管2SC

2SC系列晶体三极管参数及其代换1746--2055[中华家电维修资料网]作者:搜集整理来源:中华家电维修资料网录入:Admin更新时间：2007-12-1411:55:46点击数：2542【字体：】当图片没完全打开时,请点击图片在新窗口中查看型号厂商特性用途集电极最大直流耗散功率Pcm(W)集电极最大允许直流电流Icm(A)集电极-基极击穿电压BVcbo(V)集电极-发射极击穿电压BVceo(V)特征频率ft(Hz)放大倍数代换型号2SC2000 NEC 硅NPN三极管,汽车音频放大0.6 0.2 60 50 70M 40-1603CG180A2SC2001长电硅NPN三极管,TO-920.6 0.7 30 25 50M 90-400 3DA18A2SC2001A NEC 硅NPN三极管,放大0.6 0.7 30 25 50M 90-400 3DA18A2SC2002 NEC 硅NPN三极管,放大0.6 0.3 60 60 140M 30-4003DG130D2SC2003 NEC 硅NPN三极管,放大0.6 0.3 80 80 140M 30-4003DG182F2SC2009 硅NPN三极管0.25 0.1 35 200M 3DK2A2SC2014 硅NPN三极管0.5 0.2 100 100M3DG180I2SC2017 硅NPN三极管100 10 4503DD264A2SC2020 SONY 硅NPN三极管,VHFRF功率放大12 3 45 20 270M 30-150 3DA22A2SC2021ROHM极管,一般小信号放大，配对管2SA937 0.3 0.1 50 40 180M120-8202SC2021L N 硅NPN 三极管,低噪声 0.3 0.15 50 180-5602SC2022硅NPN 三极管 30130010M3DK205F 2SC2023SANKEN 硅NPN 三极管,串联调整，开关，一般放大 40 2 300 300 10M 303DK206F2SC2024硅NPN 三极管 1 1 80 150M 3DK30C2SC2025NEC硅NPN 中功率UHF-VHF 三极管 0.25 0.07 25 12 4.5G 20-2502SC2026NEC 硅NPN 三极管,VHF ，UHF 低噪声放大 0.25 0.05 30 14 2G 25-200 3DG44C2SC2027硅NPN 三极管 50 5 1500 3DA58I2SC2028 FUJI 硅NPN 三极管,高频放大 5 1.5 80 50 250M 90-320 3DA14B 2SC2029硅NPN 三极管 10280 150M 3DK104E 2SC203硅NPN 三极管 0.35 0.2 40 350M3DG130C2SC2034 TOSHIBA硅NPN 三极管,功率放大 12 2 120 90 150M 50-200 2SC2035硅NPN 三极管0.3 0.3 50 350M 3DK29B2SC2036TOSHIB A 资料来自网上118080150M100整理,硅NPN,功率放大2SC2037 NEC 一般NPN晶体管0.25 0.07 25 12 4.5G 20-2502SC2039 硅NPN三极管80 8 70 200M 3DA73B2SC204 硅NPN三极管0.35 0.2 20 350M3DG130C2SC2043 FUJI 硅NPN三极管,功率放大25 8 70 70 220M 20-2002SC2050 FUJI 硅NPN三极管,功率放大13 8 70 70 150M 20-1502SC2053 MIT 硅NPN三极管,VHFRF放大0.6 0.3 40 17 10-1802SC2055 MIT 硅NPN三极管,VHFRF放大0.5 0.3 18 9 1.7G 10-1803DG130A。

2SC3320中文资料

Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time
IC = 7.5A, IB1 = 1.5A IB2 = -3A, RL = 20 ohm Pw = 20 µs Duty=<2%
Thermal characteristics Item Thermal resistance
Symbol Rth(j-c)
Test Conditions Junction to case
Collector current IC[A]
Saturation voltage VCE(sat), VBE(sat)[V]
Switching time ton, tstg, tf [µs]
Collector current IC[A] Base and Collector Saturation Voltage
Min. 500 400 400
7
10
Typ.
-
Max.
1.0 1.0
Units
V V V V mA mA
1.0
V

1.5
V
0.5
µs
1.5
µs
0.15 µs
Min. Typ.

2SC535资料

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Foward transfer admittance yfe (typ)
32 – j10
Output admittance (typ)
yoe
0.08 + j0.82
Note: 1. The 2SC535 is grouped by hFE as follows.
B
C
60 to 120 100 to 200
Typ —
—
—
— — 0.72 0.17
940 0.9 20
Max —
—
—
0.5 200 — —
— 1.2 —
Noise figure
NF
—
3.5
5.5
Input admittance (typ)
yie
1.3 + j5.3
Reverse transfer admittance yre (typ)
–0.078 – j0.41
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
2SC535
Typical Transfer Cahracteristics (2) 5
VCE = 6 V 4
3
2
1
0
0.6
0.7
0.8

2SC1959中文资料

3
2003-03-24
2SC1959
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
• • • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA 1 watt amplifier applications. Complementary to 2SA562TM. Unit: mm
Maxபைடு நூலகம்mum Ratings (Ta = 25°C)
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Symbol ICBO IEBO hFE (1) DC current gain (Note) hFE (2) (Note) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 35 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 400 mA IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz

2SC5423资料

12Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws andregulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examplesof the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as officeequipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-ucts may directly jeopardize life or harm the human body.– Any applications other than the standard applications intended.(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of MatsushitaElectric Industrial Co., Ltd.M a i n t e n a n D i s c o n t i n u eP le a s ev i s it f o l l o w i n g U R L a b o u t l a t e s t i n fo r mh t t p ://p a n a s o n i c .n e t /s c /e n。

2SC1906中文资料

4
3
8
12 250
200
2 100
1
50
yoe = goe+jboe VCE = 9 V
f = 25 MHz
0
0.2 0.4 0.6 0.8 1.0 1.2
Output Conductance goe (mS)
Forward Transfer Admittance vs.
Frequency
20
IC = 1 mA
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
Maximum Collector Dissipation Curve 300
200
100
0
50
100

2SC5200中文资料(ST)中文数据手册「EasyDatasheet - 矽搜」

芯片中文手册,看全文,戳
高功率NPN外延平面双极型晶体管
特征
■ 高击穿电压V ■ 典型˚F T = 30兆赫
申请书
■ 音频功放
CEO = 230 V
描写
本设备采用新型位-LA（双极型晶体管线性放大器）技术制造的NPN晶体管.由此产生的晶体管显示出良好的增益线性特性.
内部示意图
2SC5200
参数
集电极基极电压（I 集电极 - 发射极电压（I 发射极基极电压（I
集电极电流
E = 0) B = 0)
C = 0)
集电极电流峰值
总功耗在T
储存温度
C = 25 °C
工作结温
表 3中 .
符
RthJC
热数据
参数热阻结案件最大
2SC5200
Value 230 230 5 15 30 150 -55至150 150
Value 0.83
Unit V V V A A W °C °C
Unit °C/W
Doc ID 16310 Rev 1
芯片中文手册,看全文,戳
2SC5200
2
电气特性
Tcase = 25°C除非另有说明
表 4.
电气特性
符
参数
集电极截止电流
ICBO
(IE = 0)
发射极截止电流
I EBO
VCC = 60 V I C = 5A IB1= -I B2 = 0.5 A
IC = 1 A VCE = 5 V VCB = 10 V F = 1兆赫 ≤ 1.5%
Min. Typ. Max. Unit 5 µA
5 µA
230
V
V
3V 1.5 V 55 80 120 35

晶体管型号2SC系列（深圳市卓冷机电有限公司）

晶体管型号2SC系列（深圳市卓冷机电有限公司）晶体管型号资料反压Vbe0电流Icm功率Pcm放大系数特征频率管子类型2SC100880V 0.7A 0.8W * 50MHz NPN 2SC1047 30V0.015A0.15W* * NPN2SC106 60V 1.5A 15W * * NPN 2SC116235V 1.5A 10W * * NPN 2SC1213D50V 0.5A 0.4W * * NPN 2SC12150V 0.5A 0.6W * * NPN 2SC1222 60V 0.1A0.25W*100MHzNPN2SC1317-R30V 0.5A 0.4W * * NPN 2SC13650V 0.05A 0.5W * * NPN 2SC1494 36V 6A 40W *175MHzNPN2SC1507300V 0.2A 15W * * NPN 2SC1514 300V 0.1A1.25W* * NPN2SC1569300V 0.15A 1.5W * * NPN 2SC157250V 0.07A 0.6W * * NPN3A2SC157250V 0.07A 0.6W * * NPN 2SC1573A250V 0.07A 0.6W * * NPN 2SC162780V 0.3A 0.6W * * NPN 2SC167430V 0.02A 0.1W * * NPN 2SC1685 30V 0.1A0.25W* * NPN2SC1685Q 30V 0.1A0.25W* * NPN2SC17450V 0.3A 0.3W * * NPN 2SC181560V 0.15A 0.4W * 80MHz NPN 2SC182 780V 4A 30W * * NPN 2SC184645V 1A 1.2W * * NPN 2SC1855 20V 0.02A0.25W*550MNPN2SC187550V 0.15A 0.4W * * NPN 2SC189 0A120V 0.05A 0.3W * * NPN 2SC190 630V 0.05A 0.3W * * NPN2SC192340V 0.02A 0.1W * * NPN 2SC194 21500V 3A 100W * * NPN 2SC195 930V 0.4A 0.5W * * NPN 2SC198 3R80V 3A 30W * * NPN 2SC20271500V 5A 50W * * NPN 2SC206 8 70V 0.2A0.62W* * NPN2SC2073150V 1.5A 25W * * NPN 2SC212 0Y30V 0.8A 0.6W * * NPN 2SC212 52200V 5A 50W * * NPN 2SC2168200V 2A 30W * * NPN 2SC218845V 0.05A 0.6W * * NPN 2SC219450V 5A 100W * * NPN 2SC221650V 0.05A 0.3W * * NPN 2SC2229200V 0.05A 0.8W * * NPN 2SC22330V 1.5A 0.9W * * NPN 62SC2238160V 1.5A 25W * * NPN 2SC2258250V 0.1A 1W * * NPN 2SC227 300V 0.1A0.75W* * NPN 2SC2271N 300V 0.1A0.75W* * NPN2SC2371300V 0.1A 10W * * NPN 2SC2377 20V0.015A0.2W * * NPN2SC2377C30V 0.15A 0.2W * * NPN 2SC238 3Y160V 1A 0.9W * * NPN 2SC245 6300V 0.1A 10W * * NPN 2SC248 2150V 0.1A 0.9W * * NPN 2SC256 8300V 0.2A 10W * * NPN 2SC257 0A25V 0.07A 0.6W * * NPN 2SC259 440V 5A 10W * * NPN 2SC261 300V 0.1A 0.8W * * NPN2SC2611 300V 0.1A1.25W* * NPN2SC2621300V 0.2A 10W * * NPN 2SC263 6Y30V 0.05A 0.4W * * NPN 2SC265 3H250V 0.2A 15W * * NPN 2SC265 5Y60V 2A 0.9W * * NPN 2SC2688300V 0.2A 10W * * NPN 2SC2705* * * * * NPN 2SC271735V 0.8A 7.5W * * NPN 2SC278560V 0.1A 0.3W * * NPN 2SC283930V 0.1A 0.1W * * NPN 2SC287850V 0.3A 0.4W * * NPN 2SC2923300V 0.2A 15W * * NPN 2SC304CD60V 0.5A 0.8W * * NPN 2SC3063300V 0.1A 1.2W * * NPN 2SC31160V 0.15A 0.2W * * NPN 42SC3153900V 6A 100W * * NPN 2SC3198G60V 0.15A 0.4W * * NPN 2SC3265Y30V 0.8A 0.2W * * NPN 2SC3271300V 0.1A 5W * * NPN 2SC3277* * * * * NPN 2SC3279 30V 2A0.75W* * NPN2SC330100V 15A 100W * * NPN 2SC331 500V 5A 40W 20 * NPN 2SC332 500V 15A 80W * * NPN 2SC332 880V 2A 0.9W * * NPN 2SC3355 20V 0.15A * *6500MHzNPN2SC3358 20V 0.15A * *7000MHzNPN2SC339950V 0.1A 0.3W * * NPN 2SC340 250V 0.1A 0.3W * * NPN2SC34140V 0.1A 0.5W * * NPN 3C2SC3451100V 3A 50W 12 * NPN 72SC3461100V 6A 100W 12 * NPN 02SC3481500V 3.5A 80W * * NPN 02SC3481500V 5A 120W * * NPN 12SC3481500V 6A 120W * * NPN 22SC3481500V 3.5A 80W * * NPN 42SC3481500V 5A 120W * * NPN 52SC3481500V 6A 120W * * NPN 62SC350900V 6A 80W 12 * NPN 52SC352500V 15A 100W 13 * NPN 72SC35930V 0.5A 1.2W 90 * NPN 52SC367900V 5A 100W * * NPN 92SC368900V 7A 120W * * NPN 02SC3681500V 6A 120W * * NPN 2SC36861500V 7A 120W * * NPN 2SC368 71500V 8A 150W * * NPN 2SC368 81500V 10A 150W * * NPN 2SC3721200V 10A 200W * * NPN 2SC37291500V 5A 50W * * NPN 2SC3783900V 5A 100W * * NPN 2SC380 35V 0.03A0.25W* * NPN 2SC3807 30V 2A 1.2W *260MHzNPN2SC383 20V 0.05A 0.2W * * NPN 2SC3858200V 17A 200W * 20MHz NPN 2SC3866900V 3A 40W * * NPN 2SC3873500V 12A 75W * 30MHz NPN 2SC38831500V 5A 50W * * NPN 2SC38861400V 8A 50W * 8MHz NPN 2SC38820V 0.02A 0.2W * * NPN 2SC38931400V 8A 50W * 8MHz NPN 2SC3907180V 12A 130W * 30MHz NPN 2SC3953 120V 0.2A 1.3W *400MHzNPN2SC398750V 3A 20W 1000 * NPN(达林顿) 2SC39971500V 15A 250W * * NPN2SC39981500V 25A 250W * * NPN2SC4024100V 10A 35W * * NPN2SC403 50V 0.1A 0.1W * * NPN2SC4038 50V 0.1A 0.3W *180MHzNPN2SC4059600V 15A 130W * * NPN 2SC4106500V 7A 50W * 20MHz NPN 2SC41111500V 10A 250W * * NPN 2SC41191500V 15A 250W * * NPN 2SC4199A1500V 10A 100W * * NPN 2SC423800V 2A 30W * * NPN450V 7A 40W * * NPN 22SC4281400V 12A 200W * * NPN 82SC4291500V 5A 100W * * NPN 12SC4291500V 6A 100W * * NPN 22SC429500V 12A 75W * * NPN 72SC4301500V 6A 80W * * NPN 3A2SC4421100V 8A 60W * * NPN 92SC451550V 3A 30W * * NPN 72SC458600V 15A 75W * * NPN 22SC45830V 0.1A 0.2W * * NPN D2SC470900V 14A 130W * 6MH NPN 62SC4741500V 6A 50W * * NPN( 带阻尼) 2 2SC4741500V 6A 50W * * NPN 52SC4741500V 10A 50W * * NPN 72SC4761500V 7A 60W * * NPN( 带阻尼) 92000V 0.2A 35W * * NPN 32SC492800V 10A 70W * * NPN 42SC4921500V 8A 50W * * NPN 72SC4941500V 6A 65W * * NPN 12SC495500V 2A 25W * * NPN 32SC49570V 0.8A 5W * * NPN Y2SC5021000V 7A 100W * * NPN 02SC5061500V 10A 50W * * NPN 82SC5081500V 10A 50W * * NPN 62SC5081500V 10A 50W * * NPN 82SC5131500V 16A 50W * * NPN 22SC520230V 15A 150W * * NPN 02SC5201500V 10A 50W * * NPN 72SC5241500V 15A 200W * * NPN 32SC52441500V 15A 200W * * NPN 2SC525 1000V 7A 100W * * NPN 2SC52511500V 12A 50W * * NPN 2SC52521500V 15A 100W * * NPN 2SC536F 40V 0.1A0.25W* * NPN2SC5694* * * * * * 2SC752G40V 0.2A 0.2W * * NPN 2SC815 60V 0.2A 0.25W* * NPN 2SC828 45V 0.05A0.25W* * NPN2SC900 30V 0.03A0.25W *100MHzNPN2SC945 50V 0.1A0.25W* * NPN。

2SC1953Q资料

VCB = 100 V, IE = 0
vi
VCE = 5 V, IC = 10 mA IC = 30 mA, IB = 3 mA
130
ea s
Collector-emitter saturation voltage Transition frequency
e
VCE(sat) Cob
VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Power Transistors
2SC1953
Silicon NPN epitaxial planar type
For audio system/pre-drive Complementary to 2SA0914
φ 3.16±0.1 8.0+0.5 –0.1
Unit: mm
3.2±0.2
3.8±0.3
at io n.
10
hFE IC
fT I E
Cob VCB
IE=0 f=1MHz TC=25˚C
100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
Pl
ea s
e
vi
si
SJD00096BED
M Di ain sc te on na tin nc ue e/ d
1.9±0.1
0.75±0.1 0.5±0.1
• High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • A complementary pair with 2SA0914, is optimum for the pre-driver stage of a 60 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink