M6035C-E345;M6045C-E345;M6060C-E345;中文规格书,Datasheet资料

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各主板型号里的字母

各主板型号里的字母代表啥意思。

先从一线大品牌说起吧：华硕（ASUS）枝嘉（GIGABYTE）微星（MSI）华硕与枝嘉和微星主板命名方式比确实复杂一些，华硕主板型号主要分为：ABCD－EF六个区域。

如主板M4A88TD－M，其中A区域代表CPU的插座种类，目前还能大量见到的M2（AMD，AM2）M3（AMD，am2+/am2）M4（AMD，am3）P5(Intel,LGA775) P6(Intel , LGA1366) P7（Intel ,LGA1156）支持最新的Intel LGA1155 Sandy Bridge处理器的6系列主板则被命名为P8。

可以发现，该区域数字的递增（2-4，5-8）分别与两家厂商CPU插座更迭的时间顺序一致。

故上主板M4代表支持aM3 插槽的CPU。

B区表示主板芯片组如：I平台P55代表主板用了Intel P55的芯片组A平台A78 是用了AMD 780G芯片组 A88就是采用的AMD 880G 芯片组C区表示主板支持的内存规格。

字母为C 表示支持DDR2和DDR3两种内存字母为T 表示只支持DDR3内存这为用户辨别规格提供方便，但懂次代表字母意义的并不多。

D区代表是否拥有华硕巅峰设计（stock cook3）有则有字母D，没有则空。

E区表示主板的版型通常说的大阪小板。

（M等于Micro atx小板，atx 大板）V表示具有显示输出功能的ATX。

（普通板ATX版型此处为空）M4A88TD－M 说明是小板。

F区代表产品的系列，除了大家耳熟能详的PRO（Professional），EVO（Evolution），Deluxe，Premium四个中高端系列（定位高于标准版，由低到高）以外，拥有LE，LE2，LX后缀的华硕主板分别为超值版，超值版2和入门超值版（定位低于标准版，由高到低），没有此项后缀的产品自然就是标准版啦。

M4A78LT－MLE 后缀LE表示定位比标准版稍低一些。

Correlation of fasting serum C-peptide

180C.Chen et al./International Journal of Cardiology68(1999)179–186The association of insulin levels with the car-tolerance test and had fasting and2h plasma glucose diovascular risk may not be the same for men and,5.6mM and,7.8mM,respectively.women.It has been shown that high insulin levels For the purpose of the present analysis,subjects appear to be linked to cardiovascular diseases in men with antihypertensive treatment,impaired glucose only[11],and this may explain the well-known fact tolerance or diabetes,and those with missing values in cardiovascular epidemiology that women are of both insulin and C-peptide were excluded. somehow protected from the clinical complications ofatherosclerosis[12].However,it remains to be 2.2.Measurementsestablished that insulin is the culprit or a possible2‘‘innocent bystander’’[12].Body mass index(weight/height)and waist-to-Thus,the purpose of the present community-based hip ratio were used as indexes of obesity.Waist study was to investigate the relationship of fasting circumference was the minimal abdominal girth serum insulin and C-peptide levels to markers of the between the rib cage and iliac crest and the hip metabolic syndrome of syndrome X in a homoge-circumference was the maximal horizontal girth neous Chinese population with normal glucose toler-between waist and thigh.Three consecutive blood ance,in which fasting insulin and C-peptide levels pressure readings,separated by at least5min,were would mostly reﬂect the degree of insulin resistance taken from the right arm from seated subjects and and presumably be least affected by b cell dysfunc-were averaged for calculation of mean blood pressure tion[6].(51/3systolic blood pressure12/3diastolic bloodpressure).Overnight fasting serum and plasma sample(pre-2.Material and methods served with EDTA and NaF)were collected byvenipuncture and kept frozen(2208C)until analyzed.2.1.Sample selection Fasting plasma glucose was determined using thehexokinase-glucose-6-phosphate dehydrogenase The characteristics of the target population and the method using a glucose(HK)reagent kit(Gilford, methodology of Kinmen study have been reported Oberlin,OH).Serum insulin was measured by [13–15].In brief,the study subjects were those over radioimmunoassay(Incstar,Stillwater,USA).The 30years of age in Kin-Chen,Kinmen.According to detection limit was12.3pM.The intra-and inter-the household registration,6346residents(3024men assay coefﬁcients of variation were7.4%and9.1%, and3322women)were eligible for screening.In respectively.Serum C-peptide was measured by 1992,demographic and clinical parameters including radioimmunoassay(GP serum M1221,Novo,Bagas-body height,body weight,waist and hip circumfer-waerd,Denmark).The coefﬁcients of variation were ences,systolic and diastolic blood pressure were 6.9%intra-assay and8.0%interassay with a mini-documented from4620(2107men and2513women)mum detection level of0.1nM.respondents(73%response rate)based on interviewswith structured questionnaire administered by the 2.3.Statistical analysisYang-Ming Crusade,a volunteer organization of themedical students from the National Yang-Ming Uni-The main dependent variables of interest were versity.Their fasting blood samples were drawn by fasting serum insulin and C-peptide levels,which the public health nurses of the Kinmen Health were transformed to log before modeling or hypoth-10Bureau.Subjects with fasting plasma glucose be-esis testing to reduce skewness and kurtosis observed tween5.6and7.8mM underwent75g oral glucose in this population(Figs.1and2).Unpaired student2tolerance test,conducted and interpreted according to t-test or x test were performed for between-group World Health Organization criteria[16]with some comparisons.Pearson’s correlation coefﬁcients be-modiﬁcation.Subjects with normal glucose tolerance tween all variables were calculated.Multiple linear were deﬁned as those with fasting plasma glucose regression analysis was used to model the outcome ,5.6mM,or those who received oral glucose variable(insulin or C-peptide)as a function ofC.Chen et al./International Journal of Cardiology68(1999)179–186181variables were expressed as mean6standard devia-tion.3.Results3.1.Gender differences of the characteristics of thestudy populationTheﬁnal population for this analysis were1447men and1800women with a mean age of46.7years(range:30–91years)(Table1).Men had higher meanvalues of age,height,waist-to-hip ratio,serum totalcholesterol,triglyceride,uric acid,fasting plasmaglucose,and mean blood pressure,and lower mean Fig.1.Percentage frequency distribution of fasting serum insulin(IRI)concentration for residents aged30years and older with normal glucose values of high-density lipoprotein–cholesterol and tolerance in Kin-Chen,Kinmen.insulin than women.Men and women had similarC-peptide concentrations and body mass index.covariates,including age,sex,smoking,height,body3.2.Correlates of insulin and C-peptidemass index,waist-to-hip,serum total cholesterol,triglyceride,high-density lipoprotein cholesterol,uricSimple correlation analysis showed that insulin and acid,fasting plasma glucose,and mean blood pres-C-peptide were highly correlated(r50.67,p, sure.Potentialﬁrst and higher order interactions0.0001)and both were signiﬁcantly associated with among age,sex,body mass index,and mean bloodage,body mass index,waist-to-hip,total cholesterol, pressure were tested in these models.Finally,eithertriglyceride,high-density lipoprotein–cholesterol, insulin or C-peptide was also added into these modelsuric acid,fasting plasma glucose,and mean blood to examine the possible relationship between hy-pressure(Table2).In comparison to insulin,C-perinsulinemia and insulin resistance.All continuouspeptide had greater or at least comparable absolutevalues of correlation coefﬁcients with the well-knownmarkers of metabolic syndrome X.Age demonstratedan effect on all variables except high-density lipopro-tein–cholesterol.The two indexes of obesity,bodymass index and waist-to-hip ratio,differed obviouslywith regard to associations with age and height.Waist-to-hip ratio was associated more with age thanbody mass index.Height was positively associatedwith waist-to-hip ratio but negatively associated withbody mass index.Female sex was independently associated witheither insulin or C-peptide in multiple linear regres-sion analyses(Table3).Insulin was signiﬁcantlypositively associated with female sex,height,bodymass index,waist-to-hip ratio,triglyceride,choles-terol,uric acid,and glucose,and negatively associ-ated with age,high-density lipoprotein–cholesterol Fig. 2.Percentage frequency distribution of fasting serum C-peptideand smoking(Table3).Independent predictors for (FCP)concentration for residents aged30years and older with normalglucose tolerance in Kin-Chen,Kinmen.C-peptide were similar to those of insulin except for182C.Chen et al./International Journal of Cardiology68(1999)179–186Table1Characteristics of the study subjects with normal glucose tolerance in Kin-Chen,KinmenParameters All Men Women p values*(3247)(n51447)(n51800)Age(years)46.7612.147.8612.145.8612.1,0.0001 Smoking(yes:no)613:2634574:87339:1761,0.0001 Height(m) 1.6260.09 1.6960.07 1.5760.060.0001 2BMI(kg/m)23.263.323.463.123.163.50.0608 WHR(cm/cm)0.8460.070.8760.060.8160.060.0001 MBP(mm Hg)9661410061393613,0.0001 FPG(mM) 4.8460.71 4.9360.70 4.7760.700.0001 Total cholesterol(mM) 5.1661.02 5.2961.05 5.0560.980.0001 Triglyceride(mM)0.9260.58 1.0560.680.8360.470.0001 HDL-C(mM) 1.4660.37 1.4060.38 1.5260.350.0001 Uric acid(m M)3266883786822856690.0001 IRI(pM)956439164398643,0.0001 FCP(nM)0.4160.210.4160.210.4060.200.3185*p values are for differences between the men and women.BMI,body mass index;FCP,fasting serum C-peptide;FPG,fasting plasma glucose;HDL-C, high-density lipoprotein-cholesterol;IRI,fasting serum insulin;MBP,mean blood pressure;WHR,waist-to-hip ratio.the addition of positive correlate of mean blood cant interactions of sex–body mass index was noted pressure and the exclusion of age,cholesterol,and for C-peptide(b520.0051,p50.0232)but not for smoking as signiﬁcant correlates.Moreover,signiﬁ-insulin.The negative regression coefﬁcient of theTable2Correlation coefﬁcients of age,BMI,IRI,and FCP with other variables in subjects with normal glucose tolerance in Kin-Chen,Kinmen Parameters Age BMI WHR IRI FCPAge(years)–0.090.390.040.13(0.0001)(0.0001)(0.0222)(0.0001) Sex(male,1;female,2)20.0620.0320.410.0820.03(0.0001)(0.0981)(0.0001)(0.0001)(0.1054) Smoking(no51,yes52)0.1620.030.2220.060.02(0.0001)(0.0503)(0.0001)(0.0009)(0.1919) Height(m)20.2220.040.1720.010.04(0.0001)(0.0110)(0.0001)(0.6862)(0.0144)2BMI(kg/m)0.09–0.400.420.42(0.0001)(0.0001)(0.0001)(0.0001) WHR(cm/cm)0.390.40–0.200.27(0.0001)(0.0001)(0.0001)(0.0001) MBP(mm Hg)0.340.300.320.160.24(0.0001)(0.0001)(0.0001)(0.0001)(0.0001) FPG(mM)0.150.120.190.160.22(0.0001)(0.0001)(0.0001)(0.0001)(0.0001) Total cholesterol(mM)0.250.100.180.120.09(0.0001)(0.0001)(0.0001)(0.0001)(0.0001) Triglyceride(mM)0.120.240.260.300.38(0.0001)(0.0001)(0.0001)(0.0001)(0.0001) HDL-C(mM)20.0320.2720.2620.2320.27(0.0727)(0.0001)(0.0001)(0.0001)(0.0001) Uric acid(m M)0.140.260.400.180.28(0.0001)(0.0001)(0.0001)(0.0001)(0.0001) IRI(pM)0.040.420.20–0.67(0.0222)(0.0001)(0.0001)(,0.0001) FCP(nM)0.130.420.270.67–(0.0001)(0.0001)(0.0001)(,0.0001)BMI,body mass index;FCP,fasting serum C-peptide;FPG,fasting plasma glucose;HDL-C,high-density lipoprotein-cholesterol;IRI,fasting serum insulin;MBP,mean blood pressure;WHR,waist-to-hip ratio.C.Chen et al./International Journal of Cardiology68(1999)179–186183 Table3Table4Multiple linear regression models for correlates of IRI(pM)and FCP Multiple linear regression models for relationship of IRI(pM)and FCP (nM)among subjects with normal glucose tolerance in Kin-Chen,(nM)among subjects with normal glucose tolerance in Kin-Chen, Kinmen,1992Kinmen,1992Dependent variables Log IRI model Log FCP model Dependent variables Log IRI model Log FCP modelb p value b p value b p value b p value(S.E.)(S.E.)(S.E.)(S.E.)Intercept0.53980.000122.14590.0001Intercept 1.06310.000121.65790.0001(0.1149)(0.1338)(0.1014)(0.1204)Age(years)20.00060.04750.00060.1089Age(years)20.00090.00100.00080.0070(0.0003)(0.0003)(0.0003)(0.0003)Sex0.11650.00010.12310.0001Sex0.06550.00010.06540.0001(0.0107)(0.0125)(0.0095)(0.0113)Smoking20.02120.01840.00660.5261Smoking20.02700.00050.01370.1426(0.0090)(0.0105)(0.0078)(0.0093)Height(m)0.29920.00010.36200.0001Height(m)0.16860.00010.22740.0001(0.0504)(0.0588)(0.0440)(0.0525)22BMI(kg/m)0.01640.00010.01670.0001BMI(kg/m)0.00950.00010.00800.0001(0.0011)(0.0013)(0.0010)(0.0012)WHR0.19260.00110.13710.0453WHR0.11630.02300.03700.5442(0.0588)(0.0685)(0.0511)(0.0610)MBP(mm Hg)0.00030.24780.00100.0012MBP(mm Hg),20.00010.70620.00080.0028(0.0003)(0.0003)(0.0002)(0.0003)FPG(mM)0.02490.00010.04660.0001FPG(mM)0.00520.17380.03360.0001(0.0043)(0.0050)(0.0038)(0.0045) Cholesterol(mM)0.01350.000120.00280.4631Cholesterol(mM)0.01510.000120.00760.0245(0.0033)(0.0038)(0.0028)(0.0034) Triglyceride(mM)0.04990.00010.07740.0001Triglyceride(mM)0.01220.02980.04690.0001(0.0063)(0.0073)(0.0056)(0.0066)HDL-C(mM)20.05040.000120.06770.0001HDL-C(mM)20.02720.000720.04640.0001(0.0092)(0.0107)(0.0081)(0.0096)Uric acid(m M)0.00020.00010.00030.0001Uric acid(m M),0.00010.41680.00020.0001 (,0.0001)(0.0001)(,0.0001)(,0.0001)IRI(pM)––0.00230.0001 Dependent variable was IRI or C-peptide.(0.0001)b,regression coefﬁcient;S.E.,standard error.FCP(nM)0.45670.0001––Variable coding:1,male;2,female.(0.0154)BMI,body mass index;FCP,fasting serum C-peptide;FPG,fastingplasma glucose;HDL-C,high-density lipoprotein-cholesterol;IRI,fasting Dependent variable was IRI or C-peptide;b,regression coefﬁcient;S.E., serum insulin;MBP,mean blood pressure;WHR,waist-to-hip ratio.standard error.Variable coding:1,male;2,female.BMI,body mass index;FCP,fasting serum C-peptide;FPG,fasting sex–body mass index interaction implied that theplasma glucose;HDL-C,high-density lipoprotein-cholesterol;IRI,fastingserum insulin;MBP,mean blood pressure;WHR,waist-to-hip ratio. strength of the positive association between sex andC-peptide reduced when body mass index increased,or the strength of the positive association between accounting for insulin.Furthermore,age and total body mass index and C-peptide was weaker in cholesterol,which were not signiﬁcant correlates of women than in men.No other signiﬁcantﬁrst-order C-peptide in previous models,were positively and and second-order interactions were found.negatively associated with C-peptide,respectively.The interaction of sex–body mass index also re-3.3.Hyperinsulinemia vs.insulin resistance mained signiﬁcantly related to C-peptide with theaddition of insulin in the model(b520.0064,p5 After controlling for C-peptide,FPG and uric acid0.0013).were no longer signiﬁcantly associated with insulin In summary,in this Chinese population with (Table4).In contrast,when C-peptide was treated as normal glucose tolerance,insulin and C-peptide dependent variable,correlates other than waist-to-hip appear to be positively correlated with markers of the ratio remained signiﬁcantly related to C-peptide after insulin resistance syndrome and C-peptide had great-184C.Chen et al./International Journal of Cardiology68(1999)179–186er,or at least,comparable values of correlation with based studies.In the study,C-peptide appeared to these recognized markers.correlate better to the well-known variables of meta-bolic syndrome X than insulin and this might suggestthat C-peptide is a better surrogate than insulin for 4.Discussion estimating insulin resistance in epidemiologicalstudies.This study examined the clinical and biochemical A gender effect on insulin resistance and hyperin-correlates of fasting serum insulin and C-peptide and sulinemia may exist since it has been shown that the gender effect in a homogeneous southern Chinese hyperinsulinemia is associated with excessive car-population.This population is characterized with a diovascular disease risk in men but not in women stable homogeneous Han people and the confounding[11].Our results clearly showed that sex was an effect of ethnicity can thus be minimized[17–19].independent correlate for both insulin and C-peptide, The results indicate that even in subjects with normal even when body mass index,waist-to-hip and other glucose tolerance,levels of insulin and C-peptide are clinical and biochemical variables were accounted quantitatively associated with the constellation of for.Sex remained to be signiﬁcantly related to insulin metabolic syndrome X,namely body mass index when C-peptide was added to the model and vice [2,20],waist-to-hip[21,22],triglyceride,high-density versa(Table4).In addition,sex signiﬁcantly modi-lipoprotein–cholesterol[23,24],uric acid[25],and/ﬁed the correlation between C-peptide and body mass or mean blood pressure[18,26].Our observations index(Table3,model2)[35].The higher level of might also underscore the importance of insulin insulin and insigniﬁcantly slightly lower level of resistance/hyperinsulinemia in the etiopathogenesis C-peptide in women than in men observed in this of non-communicable diseases in Chinese adults[17].population(Table1)might implicate that there is Women had signiﬁcantly higher levels of insulin than some sexual difference in hepatic clearance of insulin men,yet they also had more favorable cardiovascular[17].risk proﬁle.Female sex was signiﬁcantly indepen-Aging is associated with glucose intolerance and dently associated with higher levels of insulin and insulin resistance[36],and consequently increased C-peptide,when all other clinical and biochemical levels of insulin and C-peptide(Table2).However, parameters were accounted for.Furthermore,our in this study,the effect of aging on insulin and results demonstrated the signiﬁcant correlation be-C-peptide was mostly explained by other clinical and tween C-peptide and components of metabolic laboratory variables(regression coefﬁcient20.0006 syndrome X independent of insulin.This might imply for insulin and0.0006for C-peptide,respectively). that,insulin resistance is the culprit,and hyperin-These results accord with the suggestion that insulin sulinemia is only a marker,for the metabolic resistance associated with aging may be manifested syndrome X[12,27–29].mainly by enhanced response to oral glucose or Fasting insulin levels are a crude index of insulin mixed meal,not by fasting hyperinsulinemia or C-secretion and insulin resistance,and may underesti-peptide[37].Other studies in different age groups mate the magnitude of the associations between also demonstrate the different relationship between insulin resistance and components of metabolic age and insulin[24,38].syndrome X[24].The validity of the use of insulin or Height may be associated with increased risk of C-peptide as surrogates for insulin resistance in cardiovascular diseases with unknown mechanisms epidemiological studies remains to be established[39,40].This readily obtained variable has been since only a few studies extensively investigate their seldom accounted for in most epidemiological studies potential correlates[17,24,25,30]and adequately concerning insulin resistance.Brown et al.found an control confounders.This drawback may partly ex-unexpected negative association between120-m plas-plain the controversies about the relationship between ma glucose concentration and height in both sexes insulin resistance/hyperinsulinemia and hypertension[41].One possible reason for this is that the most [31],and the contribution from obesity[32]and commonly used anthropometric index,body mass glucose intolerance[33,34]in several population-index,eliminates height as an independent analyticalC.Chen et al./International Journal of Cardiology68(1999)179–186185 variable.The presumed negative association between Chronic cigarette smokers have been shown to beinsulin resistant and dyslipidemic[47].Although height and insulin resistance seems to be in accordplasma insulin response to the oral glucose load was with the‘thrifty phenotype hypothesis’.Key featuressigniﬁcantly higher in smokers than in nonsmokers, of the hypothesis are[42]:(i)intrauterine growththere was no signiﬁcant difference in the fasting retardation has a nutritional basis and the resultinginsulin level[47].In contrast,in this study smoking altered fetal environment permanently alters thewas signiﬁcantly negatively associated with insulin development and metabolic functions of organs;(ii)but not C-peptide in simple correlation and multiple these alterations are beneﬁcial to survival in a poorregression models.The reason for this discrepancy is nutritional environment,but may lead to diseasesunclear.such as Type2diabetes mellitus if nutrition isAlthough no inference about causality or temporal abundant and obesity occurs in adult life.Althoughrelationship can be drawn between insulin or C-intrauterine growth retardation has long-term conse-peptide and other correlates in this cross-sectional quences such a reducedﬁnal height and raised insulinstudy,we try to provide more information on the and proinsulin concentrations[43],no associationcorrelates and their potential interactions of both was found between the signiﬁcant results of theinsulin and C-peptide in a homogeneous population glucose tolerance test and theﬁnal height[43].Onwith normal glucose tolerance.Future epidemiologi-the other hand,an association between height andcal studies dealing with insulin or C-peptide should lipids has been recognized[26,44];height was nega-take all the possible potential confounders into con-tively associated with serum total cholesterol insideration.Chinese women and positively associated with high-density lipoprotein–cholesterol in Chinese men[26].In this study,height was not signiﬁcantly associatedAcknowledgementswith insulin and was only barely associated withC-peptide(r50.04)in univariate analysis.In multi-The authors wish to thank Ru-Ling Chen and variate analysis,height appeared to be a positiveChan-Hwa Fan,for their laborious work in the correlate of insulin and C-peptide when age,bodyanalysis of serum insulin and C-peptide.This study mass index and waist-to-hip ratio were simultaneous-was supported by grants from the National Science ly accounted for.It should be noted that height wasCouncil(NSC83-0412-B-010-026and NSC84-strongly correlated with age,body mass index and2331-B-010-006),Taiwan.waist-to-hip and the multiple linear regression modelmight be subject to problem of collinearity.Furtherstudies are needed to clarify the independent role ofReferencesheight or stature on insulin resistance.The relationship between blood pressure and in-sulin resistance remains controversial[3,31,45]and[1]Reaven GM.Role of insulin resistance in human disease.Diabetes1988;37:1595–607.may differ among ethnic groups[18,19,46].We have[2]Defronzo RA,Ferranini E.Insulin resistance.A multifaceted demonstrated in the same population that both insulin syndrome responsible for NIDDM,obesity,hypertension,and C-peptide are signiﬁcantly associated with dyslipidemia,and atherosclerotic cardiovascular disease.DiabetesCare1991;14:173–94.systolic and diastolic blood pressures(as outcome[3]Williams B.Insulin resistance:The shape of things to ncet variables)[15].In current analysis,mean blood1994;344:521–4.pressure was associated with C-peptide but not[4]Reaven GM,Lithell H,Landsberg L.Hypertension and associatedinsulin(as outcome variables).This discrepancy maymetabolic abnormalities.The role of insulin resistance and thesympathoadrenal system.N Engl J Med1996;334:374–81.also support the speculation that insulin resistance[5]Olefsky JM.Insulin resistance and insulin action.Diabetes (reﬂected by increased level of C-peptide)is more1981;30:148–62.importantly related to blood pressure than hyperin-[6]Laakso M.How good a marker is insulin level for insulin resistance.Am J Epidemiol1993;137:959–65.sulinemia.Similar discordant result has been reported[7]Modan M,Halkin H,Almog S,Lusky A,Eshkol A,SheﬁM.[35]and further analyses are needed to clarify this Hyperinsulinemia:A link between hypertension,obesity and glucoseissue.intolerance.J Clin Invest1985;75:809–17.186C.Chen et al./International Journal of Cardiology68(1999)179–186[8]Giugliano D,Quatraro A,Minei A,De Rosa N,Coppola L,[29]Pinkney JH,Mohamed-Ali V,Denver AE,Foster C,Sampson MJ,D’Onofrio F.Hyperinsulinemia in hypertension:Increased secretion,Yudkin JS.Insulin resistance,insulin,proinsulin,and ambulatory reduced clearance or both?.J Endocrinol Invest1993;16:315–21.blood pressure in type II diabetes.Hypertension1994;24:362–7.[9]Clark PMS,Hales CN.How to measure plasma insulin.Diab Metab[30]Zavaroni I,Dall’Aglio E,Alpi O,et al.Evidence for an independentRev1994;10:79–90.relationship between plasma insulin and concentration of high-[10]O’Rahilly S,Burnett MA,Smith RE,Darley JH,Turner RC.density lipoprotein cholesterol and triglyceride.AtherosclerosisHaemolysis affects insulin but not C-peptide immunoassay.Dia-1985;55:259–66.betologia1987;30:394–6.[31]Asch S,Wingard DL,Barrett-Connor EL.Are insulin and hyperten-[11]Modan M,Or J,Karasik A,et al.Hyperinsulinemia,sex,and risk of sion independently related?.Ann Epidemiol1991;1:231–44.atherosclerotic cardiovascular disease.Circulation1991;84:1165–[32]Licata G,Scaglione R,Ganguzza A,et al.Central obesity and75.hypertension.Relationship between fasting serum insulin,plasma [12]Fontbonne A.Insulin.A sex hormone for cardiovascular risk?.renin activity,and diastolic blood pressure in young obese subjects.Circulation1991;84:1442–4.Am J Hypertens1994;7:314–20.[13]Chou P,Liao MJ,Kuo H,et al.Program description and preliminary[33]Mbanya J-CN,Thomas TH,Wilkinson R,Alberti KGMM,Taylor R.health survey data in Kin-Ha,Kinmen.Chung Hua I Hsueh Tsa Hypertension and hyperinsulinemia:A relation in diabetes but not Chih(Taipei)1993;52:241–8.essential ncet1988;I:733–4.[14]Chen CH,Chuang JH,Kuo HS,Chang MS,Wang SP,Chou P.A[34]Takahashi H,Nakanishi T,Nishimura M,Fukumitsu S,Yoshimurapopulation-based epidemiological study on cardiovascular risk fac-M.Role of insulin in the pathogenesis of hypertension associated tors in Kin-Chen Kinmen.Int J Cardiol1995;48:75–88.with glucose intolerance.Clin Exp Hypertens1993;15:575–84. [15]Chen CH,Tsai ST,Chuang JH,Chang MS,Wang SP,Chou P.[35]Every NR,Marshall JA,Boyko EJ,Rewers M,Keane EM,HammanPopulation-based study of insulin,C-peptide,and blood pressure in RF.Blood pressure,insulin,and C-peptide levels in San Luis Valley Chinese with normal glucose tolerance.Am J Cardiol1995;76:585–Colorado.Diabetes Care1993;16:1543–50.8.[36]Shimokata H,Muller DC,Fleg JL,Sorkin J,Ziemba AW,Andres R.[16]Chou P,Wu GS,Li CL,Tsai ST.Progression to type2diabetes Age as independent determinant of glucose tolerance.Diabetesamong high-risk groups in Kin-Chen,Kinmen.Exploring the natural1991;40:44–51.history of type2diabetes(abstract).Diabetes Care1998;21:1183–7.[37]Giugliano D,Salvatore T,Paolisso G,et al.Impaired glucose [17]Boyko EJ,Keane EM,Marshall JA,Hamman RF.Higher insulin metabolism and reduced insulin clearance in elderly hypertensives.and C-peptide concentrations in Hispanic population at high risk for Am J Hypertens1992;5:345–53.NIDDM San Luis Valley Diabetes Study.Diabetes1991;40:509–15.[38]Burke GL,Webber LS,Sriivasan SR,Radhakrishnamurthy B, [18]Saad MF,Lillioja S,Nyomba BL,et al.Racial differences in the Freedman DS,Berenson GS.Fasting plasma glucose and insulinrelation between blood pressure and insulin resistance.N Engl J levels and their relationship to cardiovascular risk factors in Med1991;324:733–9.children:Bogalusa Heart Study.Metabolism1986;35:441–6. [19]Cruickshank JK,Cooper J,Burnett M,MacDuff J,Drubra U.Ethnic[39]Hebert PR,Rich-Edwards JW,Manson JE,et al.Height anddifferences in fasting plasma C-peptide and insulin in relation to incidence of cardiovascular disease in male physicians.Circulation glucose tolerance and blood ncet1991;338:842–7.1993;88(Part1):1437–43.[20]Caro JF.Insulin resistance in obese and non-obese man.J Clin[40]Voors AW,Webber LS,Frerichs RR,Berenson GS.Body height andEndocrinol Metab1991;73:691–5.body mass as determinants of basal blood pressure in children—The [21]Kaplan NM.The deadly quartet:Upper-body obesity,glucose Bogalusa Heart Study.Am J Epidemiol1977;106:101–8.intolerance,hypertriglyceridemia,and hypertension.Arch Intern[41]Brown DC,Byrne CD,Clark PMS,et al.Height and glucose Med1989;149:1514–20.tolerance in adult subjects.Diabetologia1991;34:531–3.[22]Haffner SM,Fong D,Hazuda HP,Pugh JA,Patterson JK.Hy-[42]Hales CN.Metabolic consequences of intrauterine growth retarda-perinsulinemia,upper body adiposity,and cardiovascular risk factors tion,Acta Paediatrica1997;Suppl423:184–187.in non-diabetics.Metabolism1988;37:338–45.[43]Leger J,Levy-Marchal C,Bloch J,et al.Reducedﬁnal height and [23]Cambien F,Warnet J-M,Eschwege E,Jacqueson A,Richard JL,indications for insulin resistance in20year olds born small forRosselin G.Body mass,blood pressure,glucose,and lipids:Does gestational age:Regional cohort study.Br Med J1997;315:341–7.plasma insulin explain their relationships?.Arteriosclerosis[44]Glueck CJ,Taylor HL,Jacobs D,Morrison JA,Beaglehole R, 1987;7:197–202.Williams OD.Plasma high-density lipoprotein cholesterol:Associa-[24]Manolio TA,Savage PJ,Burke GL,et al.Association of fasting tion with measurements of body mass,the Lipid Research Clinicsinsulin with blood pressure and lipids in young adults:The Program Prevalence Study.Circulation1980;62(Suppl IV):62–9.CARDIA Study.Arteriosclerosis1990;10:430–6.[45]Muller DC,Elahi D,Pratley RE,Tobin JD,Andres R.An epi-[25]Modan M,Halkin H,Lusky A.Elevated serum uric acid-a facet of demiological test of the hyperinsulinemia–hypertension hypothesis.hyperinsulinaemia.Diabetologia1987;30:713–8.J Clin Endocrinol Metab1993;76:544–8.[26]Kesteloot H,Huang DX,Yang XS,et al.Serum lipids in the[46]Baba T,Kodama T,Tomiyama T,Sohn D-R,Ishizaki I.SerumPeople’s Republic of China:Comparison of western and eastern insulin level versus blood pressure:A cross-sectional,case-con-populations.Arteriosclerosis1985;5:427–33.trolled study in non-obese,middle-aged Japanese subjects with [27]Sawicki PT,Heinemann L,Starke A,Berger M.Hyperinsulinemia is normal glucose tolerance.Diabetic Med1994;11:42–9.not linked with blood pressure elevation in patients with insulinoma.[47]Facchii FS,Hollenbeck CB,Jeppesen J,Chen Y-D,Reaven GM.Diabetologia1992;35:649–52.Insulin resistance and cigarette ncet1992;339:1128–30.[28]Koutis AD,Lionis CD,Isacsson A,Jakobsson A,Fioretos M,Lindholm LH.Characteristics of the Metabolic Syndrome X in acardiovascular low risk population in Crete.Eur Heart J1992;13:865–71.。

芯片品级英文代码

芯片品级英文代码通常情况下，当显卡的信息过后，显示的便是系统信息了。

主板的型号一般在第三行，而最下面一行显示的则是主板的主要信息，接下来的2a5letgac才是最重要的信息显示，2a5le代表主板采用的是via apollo mvp3芯片组，tg是主板厂商代码，此处代表tekram(建邦)，至于ac则代表主板型号。

那么具有有哪些代码呢?一起来科普科普。

芯片组代码：2a69k：intel bx 芯片组2a69j：intel lx 芯片组2a69h: intel fx 芯片组2a59c: intel triton fx 芯片组2a59f: intel triton ii hx 芯片组2a59g: intel triton vx 芯片组2a59h: intel triton vx 芯片组2a59i: intel triton tx 芯片组2a59a: intel natoma (neptune) 芯片组2a: intel mercury 芯片组2a59b: intel mercury 芯片组2b59a: intel neptune eisa 芯片组2a5c7: via vt82c 芯片组2a5g7: vlsi vl82c 芯片组2a5gb: vlsi lynx vl82c/vl82c2a5ia: sis /02/03 芯片组2a5ic: sis /02/03 芯片组2a5id: sis /12/13 芯片组2a5ie: sis - 芯片组2a5if: sis 芯片组2a5ih: sis 芯片组2a5ii: sis 芯片组2a5ik: sis 芯片组2a5kb: ali /61/51 芯片组2a5kc: 目前未明2a5kf: ali /23 芯片组2a5ki: ali iv+ m/m 芯片组 (super tx 芯片组)2a5la: via apollo vp1 芯片组 (vt82cvp) ( vxpro 芯片组)2a5lc: via apollo vp2 芯片组 (amd 芯片组) 2a5ld: via vpx 芯片组 ( vxpro+ 芯片组) 2a5le: via apollo (m)vp32a5l7: via vt82c 2a5l9: via vt82cm2a5r5: forex a- 芯片组2a5ui: opti 82c// 芯片组2a5ul: opti 82c// 芯片组2a5um: opti 82c// 芯片组2a5un: optiviper-m82c//|viper 82c//芯片组2a5x7: umc 82c 芯片组2a5x8: umc umbf/umbf/umbf 芯片组2a4h2: contaq 82c-9 芯片组2a4ib: sis / 芯片组2a4kc: ali /45/31 芯片组2a4kd: ali 芯片组2a4l4: via a// 芯片组2a4l6: via // 芯片组2a4uk: opti-g- 芯片组2a4x5: umc / 芯片组2c: efar ecg-b 芯片组2c4i8: sis b/e 芯片组2c4i9: sis 85cb/e/g 芯片组2c4k9: ali 芯片组2c4j6: 目前未知2c4l2: via 82ca 芯片组2c4l6: via vtg 芯片组2c4uk: opti - g2c4x2: umc um82c/82c 芯片组2c4x6: umc umf/f2a: cyrix 芯片组 (mediagx)厂商代码：a0 asus(华硕)a1 abit(silicon star)(升技)a2 atrend (中凌)a3 asi (aquarius systems inc.) a7 arima twn ab aopen (建基) ad amaquestam mirageb0 biostar (映泰)b3 bcmc1 clevoc2 chiconyc3 chaintech (承启)c5 chapletc9 computrendcf flagpointd0 dataexpert (联讯)d1 dtk (创宏)d2 digital (dec)d3 digicomd4 dfi(钻石)e1 ecs (elitegroup) (磐英)e3 efae4 espcoe6 elonexec enpcf0 fic (fica) (大众)f2 free techf3 full yes (福扬)f5 fugutechf9 fordlianfd dataexpert or atima or gct (联讯) fh amptronfn amptrong0 giga-byte(技嘉)g3 gemlightg9 global circuit technologyh0 hsin-techh2 holco (shuttle)i3 iwill (艾威)i4 inventai5 informtechj1 jetway (jetboard, acorp) (捷波)j2 jamiconj3 j-bond(捷波)j4 jetta j6 jossk0 kapokk1 kameil1 lucky starm0 matram2 mycomp (tmc) and megastar (皇朝/麦肯) m3 mitacm4 micro-star(微星)m8 mustekm9 mlen5 nec o0 ocean (octek)(海洋)p1 pc-chips (明致)p4 asus(华硕)p8 azzap9 powertechpa epox (pronix) (磐英)pc pineq0 quanta (twn)q1 qdi(联想)r0 mtech (rise)r2 rectrons2 soyo (梅捷)s5 shuttle (holco)s9 spring circlesa seanixsc sukjung (auhua electronics co. ltd.)se smt (sundance multiprocessor technology ltd) sh sye (shing yunn technology co., ltd.)sm san-li and hope vision sn soltek (硕泰克)t0 twinhead(伦飞)t1 taemung or fentecht4 takent5 tyant6 trigentb totemtg tekram(建邦)tj totemtp commate, ozzou0 u-boardu2 air (uhc)u6 unitronv3 vtech (pcpartner)v5 vision top technologyv6 vobisv7 ykm (distribution by dayton micron)w0 wintec (edom)z1 zida (tomato boards)补足：主板购买注意事项1、工作稳定，兼容性好。

ASTM E M 中文版金属材料拉伸试验方法E

金属材料拉伸试验的标准试验方法1范围1.1 本方法适用于室温下任何形状的金属材料的拉伸试验。

特别是对于屈服强度、屈服点延伸率、抗拉强度、延伸率和断面收缩率的测定。

1.2 对于圆形试样，标距长度等于直径的4倍【E8】或5倍【E8M】（对于E8和E8M，试样的标距长度是两个标准的最大区别，其他技术内容是一致的）。

用粉末冶金（P/M）材料制成的试样无此要求，以保持工业要求的材料的压力至规定的设计面积和密度。

1.3 除本方法规定外，可对特殊材料制定单独的技术规范及试验方法，例如：试验方法和定义A370，试验方法B557，B557M。

1.4 除非另有规定，室温应定为10—38℃。

1.5 国际单位(SI)和英制单位相互独立，两个单位体系的数值并不完全相等，因此，它们应该独立使用。

两个单位体系结合使用得到的数值与标准不符合。

1.6 本标准并不涉及所有安全的问题，如果有，也是与它的用途有关。

在使用本标准前制定适当的安全和健康规范，确定使用的规章制度是本标准使用者的责任。

2参考文件2.1 ASTM标准：A 356/A 356M 铸钢、碳素钢、低合金钢、不锈钢、蒸汽锅炉钢的产品规范A370 钢产品力学性能试验方法及定义B557 锻、铸铝合金和镁合金产品的拉伸试验方法B557M锻、铸铝合金和镁合金产品的拉伸试验方法(公制)E4 试验机的力学校验方法E6 力学性能试验方法相关术语E29 用标准方法确定性能所得试验数据的有效位数的推荐方法E83 引伸计的的校验及分级方法E345 金属箔拉伸试验的测试方法E691 实验室之间探讨确定试验方法精确度的实施指南E1012 拉伸载荷下试样对中方法的确定E1856 试验机计算机数据分析处理系统的使用指导3 术语3.1 定义——在E6中出现的有关拉伸测试的名词术语均可以用在该拉伸试验方法中。

另外需补充以下术语：3.1.1 不连续屈服——轴向试验中，由于局部屈服，在塑性变形开始的地方观察到力的停滞或起伏（应力-应变曲线不一定出现不连续）。

MBR1045-E345;MBR1060-E345;MBRF1045-E345;MBR1035-E345;MBR1050-E345;中文规格书,Datasheet资料

MBR(F,B)1035 thru MBR(F,B)1060Vishay General SemiconductorDocument Number: 88669For technical questions within your region, please contact one of the following:Schottky Barrier RectifierFEATURES•Low power loss, high efficiency •Low forward voltage drop •High forward surge capability •High frequency operation•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes,dc-to-dc converters and polarity protection application.MECHANICAL DATACase: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets J ESD 201 class 2whisker testPolarity: As markedMounting Torque:10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV)10 A V RRM 35 V to 60 V I FSM 150 A V F 0.57 V , 0.70 VT J max.150 °C112KMAXIMUM RATINGS (T C = 25 °C unless otherwise noted)PARAMETERS YMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNIT Maximum repetitive peak reverse voltageV RRM 35 45 50 60 VMaximum average forward rectified current (Fig. 1) I F(AV) 10 APeak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 150 A Peak repetitive reverse current at t p = 2.0 µs, 1 kHz I RRM 1.0 0.5 AVoltage rate of change (rated V R ) dV/dt 10 000V/µsOperating junction temperature range T J - 65 to + 150 °C Storage temperature range T STG- 65 to + 175°CIsolation voltage (ITO-220AC only) from terminal to heatsink t = 1 minV AC 1500VMBR(F,B)1035 thru MBR(F,B)1060Vishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88669Note:(1) Pulse test: 300 µs pulse width, 1 % duty cycleNote:(1) Automotive grade AEC Q101 qualifiedRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T C = 25 °C unless otherwise noted)PARAMETER TE S T CONDITION S S YMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNITMaximum instantaneous forward voltage (1)I F = 10 A I F = 10 A I F = 20 A I F = 20 AT J = 25 °C T J = 125 °C T J = 25 °C T J = 125 °C V F-0.570.840.720.80 0.700.950.85VMaximum instantaneous reverse current at rated DC blocking voltage (1) T J = 25 °C T J = 125 °CI R0.10 15mATHERMAL CHARACTERISTICS (T C = 25°C unless otherwise noted)PARAMETER S YMBOL MBR MBRF MBRB UNITMaximum thermal resistance from junction to caseR θJC 2.04.02.0°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AC MBR1045-E3/45 1.804550/tube T ube ITO-220AC MBRF1045-E3/45 1.944550/tube T ube TO-263AB MBRB1045-E3/45 1.334550/tube T ube TO-263AB MBRB1045-E3/811.3381800/reel T ape and reelTO-220AC MBR1045HE3/45 (1) 1.804550/tube T ube ITO-220AC MBRF1045HE3/45 (1) 1.944550/tube T ube TO-263AB MBRB1045HE3/45 (1) 1.334550/tube T ube TO-263AB MBRB1045HE3/81 (1)1.3381800/reelT ape and reelFigure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge CurrentMBR(F,B)1035 thru MBR(F,B)1060Vishay General SemiconductorDocument Number: 88669For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse CharacteristicsFigure 5. Typical Junction CapacitanceFigure 6. Typical Transient Thermal ImpedanceMBR(F,B)1035 thru MBR(F,B)1060Vishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88669PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTORMBR1045-E3/45MBR1060-E3/45MBRF1045-E3/45 MBR1035-E3/45MBR1050-E3/45MBR1035HE3/45 MBR1045HE3/45MBR1050HE3/45MBR1060HE3/45 MBRB1035-E3/45MBRB1035HE3/45MBRB1045-E3/45 MBRB1045HE3/45MBRB1050-E3/45MBRB1050HE3/45 MBRB1060-E3/45MBRB1060HE3/45MBRF1050-E3/45 MBRF1050HE3/45MBRF1060-E3/45MBRF1060HE3/45 MBRF1035-E3/45MBRF1035HE3/45MBRF1045HE3/45 MBRB1035-E3/81MBRB1035HE3/81MBRB1045-E3/81 MBRB1045HE3/81MBRB1050-E3/81MBRB1050HE3/81 MBRB1060-E3/81MBRB1060HE3/81MBR1035。

intel主板型号后的字母是什么意思

intel主板型号后的字母是什么意思.txtintel主板型号后的字母是什么意思2007-07-15 16:08 10:20Intel芯片组往往分系列，例如845、865、915、945、975等，同系列各个型号用字母来区分，命名有一定规则，掌握这些规则，可以在一定程度上快速了解芯片组的定位和特点：一、从845系列到915系列以前PE是主流版本，无集成显卡，支持当时主流的FSB和内存，支持AGP插槽。

E并非简化版本，而应该是进化版本，比较特殊的是，带E后缀的只有845E这一款，其相对于845D是增加了533MHz FSB支持，而相对于845G之类则是增加了对ECC内存的支持，所以845E常用于入门级服务器。

G是主流的集成显卡的芯片组，而且支持AGP插槽，其余参数与PE类似。

GV 和GL则是集成显卡的简化版芯片组，并不支持AGP插槽，其余参数GV则与G相同，GL则有所缩水。

GE相对于G则是集成显卡的进化版芯片组，同样支持AGP插槽。

P有两种情况，一种是增强版，例如875P；另一种则是简化版，例如865P 二、915系列及之后 P是主流版本，无集成显卡，支持当时主流的FSB和内存，支持PCI-E X16插槽。

PL相对于P则是简化版本，在支持的FSB和内存上有所缩水，无集成显卡，但同样支持PCI-E X16。

G是主流的集成显卡芯片组，而且支持PCI-E X16插槽，其余参数与P类似。

GV和GL则是集成显卡的简化版芯片组，并不支持PCI-E X16插槽，其余参数GV则与G相同，GL则有所缩水。

X 和XE相对于P则是增强版本，无集成显卡，支持PCI-E X16插槽。

总的说来，Intel芯片组的命名方式没有什么严格的规则，但大致上就是上述情况。

另外，Intel芯片组的命名方式可能发生变化，取消后缀，而采用前缀方式，例如P965和Q965等等三、965系列之后从965系列芯片组开始，Intel改变了芯片组的命名方法，将代表芯片组功能的字母从后缀改为前缀，并且针对不同的用户群体进行了细分，例如P965、G965、Q965和Q963等等。

汝泰电子机型编号一览表

汝泰电子机型编号一览表
编码
M001 M002 M003 M004 M005 M006 M007 M008 M009 M010 M011 M012 M013 M014 M015 M016 M017 M018 M019 M020 M021 M022 M023 M024 M025 M026 M027 M028 M029 M030 M031 M032 M033 M034 M035 M036 M037 M038 M039 M040 M041
333 3300 3000 3700
M130 信得乐M3 650 M131 铠基KJ5 370 M132 铠基KJ3 198 M133 铠基KJ35 290 M134 铠基KJ60 380 M135 铠基X30 230 M136 长虹K208香槟 M137 长虹L128M双卡 M138 长虹L138M双卡 M139长虹K288金色纯净版 M140 长虹008-IIIM M141 步步高I9+ M142 国信通168 M143 国信通GS6108 M144 国信通GS6109 M145 国信通N151 M146 国信通N339 M147 国信通N272 M148 国信通N69 M149 国信通F88 M150 国信通GD988 M151 国信通GD192 M152 国信通NK138 M153 国信通GD3106 M154 国信通GD668 M155 国信通GD920 M156 国信通GD109 M157 国信通GD109+ M158 国信通GD301 M159 国信通GD301+ M160 国信通GD209 M161 埃立特ZY158 M162 东茂ST618 M163 龙之宇299 M164 天时达T668 M165 天时达T056 M166 知己Z7988 M167 知己V10 M168 奥乐668 M169 港利通KP283 M170 特灵通X5 M171 易丰E36 M172 泛泰EV269

浪潮服务器商品编码部件产品名称 Q1对应编码 Q1对应配件名称

商品编码部件产品名称Q1对应编码Q1对应配件名称CPUSPT0CPU0002H Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4809v2(6C,105W,1.9GHz)Processor Option Kit BCX305XeonE7-4809v2(1.9GHz/6c)/6.4GT/12ML3 SPT0CPU0002I Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4820v2(8C,105W,2.0GHz)Processor Option Kit BCX306XeonE7-4820v2(2.00GHz/8c)/7.2GT/16ML3 SPT0CPU0002J Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4830v2(10C,105W,2.2GHz)Processor Option Kit BCX307XeonE7-4830v2(2.2GHz/10c)/7.2GT/20ML3 SPT0CPU0002K Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4850v2(12C,105W,2.4GHz)Processor Option Kit BCX308XeonE7-4850v2(2.3GHz/12c)/7.2GT/24ML3 SPT0CPU0002L Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4860v2(12C,130W,2.6GHz)Processor Option Kit BCX309XeonE7-4860v2(2.6GHz/12c)/8.0GT/30ML3 SPT0CPU0002M Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4870v2(15C,130W,2.3GHz)Processor Option Kit BCX310XeonE7-4870v2(2.3GHz/15c)/8.0GT/30ML3 SPT0CPU0002N Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4880v2(15C,130W,2.5GHz)Processor Option Kit BCX311XeonE7-4880v2(2.5GHz/15c)/8.0GT/37.5ML3 SPT0CPU0002O Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4890v2(15C,155W,2.8GHz)Processor Option Kit BCX312XeonE7-4890v2(2.8GHz/15c)/8.0GT/37.5ML3 SPT0CPU0002P Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8857v2(12C,130W,3.0GHz)Processor Option Kit XeonE7-8857v2-Xeon3_8.0G_30M_12CSPT0CPU0002Q Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8850v2(12C,105W,3.0GHz)Processor Option Kit BCX437XeonE7-8850v2-Xeon2.3_7.2G_24M_12C SPT0CPU0002R Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8870v2(15C,130w,2.3GHz)Processor Option Kit XeonE7-8870v2-Xeon2.3_8.0G_30M_15CSPT0CPU0002S Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8891v2(10C,155W,3.2GHz)Processor Option Kit XeonE7-8891v2-Xeon3.2_8G_37.5M_10CSPT0CPU0002T Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8893v2(6C,155W,3.4GHz)Processor Option Kit XeonE7-8893v2-Xeon3.4_8G_37.5M_6CSPT0CPU0002U Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4809v3(8C,115W,2.0GHz)Processor Option Kit BCX377XeonE7-4809v3(2.0GHz/8c)/6.4GT/20ML3 SPT0CPU0002V Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4820v3(10C,115W,1.9GHz)Processor Option Kit BCX376XeonE7-4820v3(1.9GHz/10c)/6.4GT/25ML3 SPT0CPU0002W Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4830v3(12C,115W,2.1GHz)Processor Option Kit BCX375XeonE7-4830v3(2.1GHz/12c)/8.0GT/30ML3 SPT0CPU0002X Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4850v3(14C,115W,2.2GHz)Processor Option Kit BCX374XeonE7-4850v3(2.2GHz/14c)/8.0GT/35ML3 SPT0CPU0002Y Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8860v3(16C,140W,2.2GHz)Processor Option Kit BCX373XeonE7-8860v3(2.2GHz/16c)/9.6GT/40ML3 SPT0CPU00030Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8870v3(18C,140W,2.1GHz)Processor Option Kit BCX372XeonE7-8870v3(2.1GHz/18c)/9.6GT/45ML3 SPT0CPU00032Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8880v3(18C,150W,2.3GHz)Processor Option Kit BCX371XeonE7-8880v3(2.3GHz/18c)/9.6GT/45ML3 SPT0CPU00033Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8890v3(18C,165W,2.5GHz)Processor Option Kit BCX370XeonE7-8890v3(2.5GHz/18c)/9.6GT/45ML3 SPT0CPU0002Z Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8867v3(16C,165W,2.5GHz)Processor Option Kit BCX369XeonE7-8867v3(2.5GHz/16c)/9.6GT45ML3 SPT0CPU00034Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8891v3(10C,165W,2.8GHz)Processor Option Kit BCX368XeonE7-8891v3(2.8GHZ/10c)/9.6GT/45ML3 SPT0CPU00035Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8893v3(4C,140W,3.2GHz)Processor Option Kit BCX367XeonE7-8893v3(3.2GHz/4c)/9.6GT/45ML3 SPT0CPU00003Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2609v3(6C,85W,1.9GHz)Processor Option Kit BCX323E5-2609v3(1.9GHz/6c)/6.4GT/15ML3SPT0CPU00004Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2620v3(6C,85W,2.4GHz)Processor Option Kit BCX324E5-2620v3(2.4GHz/6c)/8GT/15ML3SPT0CPU00005Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2630v3(8C,85W,2.4GHz)Processor Option Kit BCX325E5-2630v3(2.4GHz/8c)/8GT/20ML3SPT0CPU00006Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2637v3(4C,135W,3.5GHz)Processor Option Kit E5-2637v3(3.5GHz/4c)/9.6GT/15ML3SPT0CPU00007Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2640v3(8C,90W,2.6GHz)Processor Option Kit BCX326E5-2640v3(2.6GHz/8c)/8GT/20ML3SPT0CPU00008Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2643v3(6C,135W,3.4GHz)Processor Option Kit BCX339E5-2643v3(3.4GHz/6c)/9.6GT/20ML3SPT0CPU00009Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2650v3(10C,105W,2.3GHz)Processor Option Kit BCX327E5-2650v3(2.3GHz/10c)9.6GT/25ML3SPT0CPU00010Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2660v3(10C,105W,2.6GHz)Processor Option Kit BCX328E5-2660v3(2.6GHz/10c)9.6GT/25ML3 SPT0CPU00011Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2667v3(8C,135W,3.2GHz)Processor Option Kit E5-2667v3(3.2GHz/8c)9.6GT/20ML3SPT0CPU00012Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2670v3(12C,120W,2.3GHz)Processor Option Kit BCX329E5-2670v3(2.3GHz/12c)9.6GT/30ML3 SPT0CPU00013Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2680v3(12C,120W,2.5GHz)Processor Option Kit BCX330E5-2680v3(2.5GHz/12c)9.6GT/30ML3 SPT0CPU00015Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2690v3(12C,135W,2.6GHz)Processor Option Kit BCX331E5-2690v3(2.6GHz/12c)9.6GT/30ML3 SPT0CPU00016Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2695v3(14C,120W,2.3GHz)Processor Option Kit BCX333E5-2695v3(2.3GHz/14c)9.6GT/35ML3 SPT0CPU00017Inspur NF5280M4Inbbb Xeon E5-2697v3(14C,145W,2.6GHz)Processor Option Kit BCX334E5-2697v3(2.6GHz/14c)9.6GT/35ML3SPT0CPU00018Inspur NF5280M4Inbbb Xeon E5-2698v3(16C,135W,2.3GHz)Processor Option Kit BCX335E5-2698v3(2.3GHz/16c)9.6GT/40MLSPT0CPU00019Inspur NF5280M4Inbbb Xeon E5-2699v3(18C,145W,2.3GHz)Processor Option Kit E5-2699v3(2.3GHz/18c)9.6GT/45ML3SPT0CPU00014Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2683v3(14C,120W,2.0GHz)Processor Option Kit E5-2683v3(2.0GHz/14C)/9.6GT/35ML3 BCX438XeonE3-1220V5(3.0GHZ)/8M/4CBCX439XeonE3-1230V5(3.40GHZ)/8M/4CBCX440XeonE3-1240V5(3.50GHZ)/8M/4CBCX441XeonE3-1240LV5(2.10GHZ)/8M/4CBCX442XeonE3-1260LV5(2.90GHZ)/8M/4CBCX443XeonE3-1270V5(3.60GHZ)/8M/4CBCX444XeonE3-1280V5(3.70GHZ)/8M/4CBCX445i3-6320(3.9GHz)/4M/2CBCX446i3-6300T(3.3GHz)/4M/2CBCX447i3-6300(3.8GHz)/4M/2CBCX448i3-6100T(3.2GHz)/3M/2CBCX449i3-6100(3.7GHz)/3M/2CBCX450G4520(3.0GHz)/3M/2CBCX451G4500T(3.0GHz)/3M/2CBCX452G4500(3.5GHz)/3M/2CBCX453G4400(3.3GHz)/3M/2CBCX322E5-2603v3(1.6GHz/6c)/6.4GT/15ML3BCX401E5-2603v4(1.7GHz/6c)/6.4GT/15ML3BCX402E5-2609v4(1.7GHz/8c)/6.4GT/20ML3BCX403E5-2620v4(2.1GHz/8c)/8GT/20ML3BCX406E5-2630v4(2.2GHz/10c)/8GT/25ML3BCX408E5-2640v4(2.4GHz/10c)/8GT/25ML3BCX412E5-2650v4(2.2GHz/12c)9.6GT/30ML3BCX414E5-2660v4(2.0GHz/14c)9.6GT/35ML3 BCX416E5-2680v4(2.4GHz/14c)9.6GT/35ML3 BCX419E5-2690v4(2.6GHz/14c)9.6GT/35ML3 BCX404E5-2623v4(2.6GHz/4c)8.0GT/10ML3 BCX407E5-2637v4(3.5GHz/4c)/9.6GT/15ML3 BCX409E5-2643v4(3.4GHz/6c)/9.6GT/20ML3 BCX415E5-2667v4(3.2GHz/8c)9.6GT/25ML3 BCX417E5-2683v4(2.1GHz/16c)/9.6GT/40ML3 BCX420E5-2695v4(2.1GHz/18c)9.6GT/45ML3 BCX422E5-2697v4(2.3GHz/18c)9.6GT/45ML3 BCX421E5-2697Av4(2.6GHz/16c)9.6GT/40ML3 BCX423E5-2698v4(2.2GHz/20c)9.6GT/50ML BCX424E5-2699v4(2.2GHz/22c)9.6GT/55ML3 BCX405E5-2630LV4(1.8GHz/10c)8.0GT/25ML3 BCX411E5-2650LV4(1.7GHz/14c)9.6GT/35ML3 BCX410E5-2648LV4(1.8GHz/14c)9.6GT/35ML3 BCX413E5-2658V4(2.3GHz/14c)9.6GT/35ML3 BCX418E5-2687WV4(3.0GHz/12c)9.6GT/35ML3 BCX425XeonE7-4809v4(2.1GHz/8C)/6.4GT/20ML3 BCX426XeonE7-4820v4(2.0GHz/10C)/6.4GT/25ML3 BCX427XeonE7-4830v4(2.0GHz/14C)/8.0GT/35ML3 BCX428XeonE7-4850v4(2.1GHz/16C)/8.0GT/40ML3 BCX429XeonE7-8860v4(2.2GHz/18C)/9.6GT/45ML3 BCX430XeonE7-8855v4(2.1GHz/14C)/8.0GT/35ML3 BCX431XeonE7-8867v4(2.4GHz/18C)/9.6GT/45ML3 BCX432XeonE7-8870v4(2.1GHz/20C)/9.6GT/50ML3 BCX433XeonE7-8880v4(2.2GHz/22C)/9.6GT/55ML3 BCX434XeonE7-8890v4(2.2GHz/24C)/9.6GT/60ML3 BCX435XeonE7-8891v4(2.8GHz/10C)/9.6GT/60ML3 BCX436XeonE7-8893v4(3.2GHz/4C)/9.6GT/60ML3 DDR3内存SPT0MEM00006Inspur32GB DDR3L-1600LRDIMM SPT0MEM00007Inspur16GB DDR3-1866RDIMMSPT0MEM00008Inspur16GB DDR3-1600RDIMMSPT0MEM00009Inspur16GB DDR3L-1600RDIMMSPT0MEM0000A Inspur8GB DDR3-1600RDIMMSPT0MEM0000B Inspur8GB DDR3L-1600RDIMMSPT0MEM0000C Inspur4GB DDR3-1600RDIMMSPT0MEM0000D Inspur4GB DDR3L-1600RDIMMDDR4内存DDR4内存BMD1558G_DDR4_UDIMM-EUBMD15616G_DDR4_UDIMM-EUSPT0MEM00002Inspur8GB DDR4-2133MHz(1Rx4)RDIMM BMD1418G RDIMM DDR4内存SPT0MEM00001Inspur16GB DDR4-2133MHz(2Rx4)RDIMM BMD14216G RDIMM DDR4内存SPT0MEM00003Inspur16GB DDR4-2133MHz(1Rx4)RDIMMSPT0MEM00004Inspur32GB DDR4-2133MHz(2Rx4)RDIMM BMD14332G LRDIMM DDR4内存SPT0MEM00005Inspur32GB DDR4-2133MHz(4Rx4)LRDIMM3.5寸企业级SATA（含托架及包装）3.5寸企业级SATA（含托架及包装）SPT0STG35007Inspur3.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0231TB SATA（企业级）SPT0STG35001Inspur3.5"2TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0422TB SATA（企业级）SPT0STG35006Inspur3.5"3TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0703TB SATA（企业级）SPT0STG35005Inspur3.5"4TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0834TB SATA（企业级）SPT0STG35003Inspur3.5"6TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT1076TB SATA（企业级）SPT0STG35002Inspur3.5"8TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive8TB SATA（企业级）2.5寸企业级SATA（含托架及包装）2.5寸企业级SATA（含托架及包装）SPT0STG25006Inspur2.5"500GB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT062500GB SATA 2.5"（企业级）SPT0STG25005Inspur2.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0611TB SATA 2.5"（企业级）SPT0STG25004Inspur2.5''2TB7.2K Enterprise SATA6Gbps Hot Swap HardDrive2TB SATA 2.5"（企业级）2.5寸SAS（含托架及包装）2.5寸SAS（含托架及包装）7,200RPM7,204RPMSPT0STG25S03Inspur2.5"1TB7.2K Enterprise SAS12Gbps Hot Swap Hard Drive BSA0531TB SAS硬盘2.5"SPT0STG25S05Inspur2.5"1TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0531TB SAS硬盘2.5"SPT0STG25S01Inspur2.5"2TB7.2K Enterprise SAS12Gbps Hot Swap Hard Drive2TB SAS硬盘2.5"10,000RPM10,004RPMSPT0STG25001Inspur2.5"1.2TB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA0841.2T热插拔SAS硬盘(1万转)2.5" SPT0STG25002Inspur2.5"1.2TB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S02Inspur2.5"1.8TB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA1091.8T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0E Inspur2.5"300GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA023300G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0G Inspur2.5"300GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA023300G热插拔SAS硬盘(1万转)2.5"SPT0STG25S08Inspur2.5"600GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S09Inspur2.5"600GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S04Inspur2.5"900GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA057900G热插拔SAS硬盘(1万转)2.5"SPT0STG25S06Inspur2.5"900GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA057900G热插拔SAS硬盘(1万转)2.5"15,000RPM15,004RPMSPT0STG25S0D Inspur2.5"300GB15K Enterprise SAS12Gbps Hot Swap Hard Drive BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S0F Inspur2.5"300GB15K Enterprise SAS6Gbps Hot Swap Hard Drive BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S07Inspur2.5"600GB15K Enterprise SAS12Gbps Hot Swap Hard Drive BSA108600G热插拔SAS硬盘(1万5千转)2.5"日立SPT0STG25003Inspur2.5"600GB15K Enterprise SAS6Gbps Hot Swap Hard Drive600G热插拔SAS硬盘(1万5千转)2.5"日立3.5寸SAS（含托架及包装）3.5寸SAS（含托架及包装）SPT0STG35S09Inspur3.5"1TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive TYP0231TB SAS硬盘SPT0STG35S08Inspur3.5"2TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0762TB SAS硬盘SPT0STG35S05Inspur3.5"2TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive BSA0762TB SAS硬盘SPT0STG35S07Inspur3.5"3TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive TCP0493TB SAS硬盘SPT0STG35S04Inspur3.5"3TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive TCP0493TB SAS硬盘SPT0STG35S06Inspur3.5"4TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA1064TB SAS硬盘SPT0STG35S03Inspur3.5"4TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive BSA1064TB SAS硬盘SPT0STG35S01Inspur3.5"6TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive6TB SAS硬盘3.5寸硬盘托架，2.5寸SAS硬盘7,200RPM7,204RPMSPT0STG25S0N Inspur2.5"1TB7.2K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA0531TB SAS硬盘2.5"SPT0STG25S0P Inspur2.5"1TB7.2K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA0531TB SAS硬盘2.5"SPT0STG25S0H Inspur2.5"2TB7.2K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray2TB SAS硬盘2.5"10,000RPM10,004RPMSPT0STG25S0K Inspur2.5"1.2TB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0M Inspur2.5"1.2TB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0J Inspur2.5"1.8TB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA1091.8T热插拔SAS硬盘(1万转)2.5"SPT0STG25S11Inspur2.5"300GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA023300G热插拔SAS硬盘(1万转)2.5" SPT0STG25S13Inspur2.5"300GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA023300G热插拔SAS硬盘(1万转)2.5" SPT0STG25S0T Inspur2.5"600GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0V Inspur2.5"600GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0Q Inspur2.5"900GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA057900G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0R Inspur2.5"900GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA057900G热插拔SAS硬盘(1万转)2.5"15,000RPM15,004RPMSPT0STG25S0Z Inspur2.5"300GB15K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S12Inspur2.5"300GB15K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S0S Inspur2.5"600GB15K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA108600G热插拔SAS硬盘(1万5千转)2.5"日立SPT0STG25S0U Inspur2.5"600GB15K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray600G热插拔SAS硬盘(1万5千转)2.5"日立3.5寸云盘和归档盘（含托架及包装）3.5寸云盘和归档盘（含托架及包装）SPT0STG3500A Inspur3.5"4TB7.2K Cloud Storage SATA6Gbps Hot Swap Hard Drive4T云盘（7200转）V03ZVSPT0STG3500E Inspur3.5"4TB5.9K Cloud Storage SATA6Gbps Hot Swap Hard Drive4T云盘（5900转）_W0CCP0B0000060053.5寸硬盘托架，2.5寸企业级SATA3.5寸硬盘托架，2.5寸企业级SATASPT0STG25008Inspur2.5"2TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray2TB SATA 2.5"（企业级）SPT0STG25009Inspur2.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray1TB SATA 2.5"（企业级）SPT0STG2500A Inspur2.5"500GB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray500GB SATA 2.5"（企业级）PCIE SSD卡PCIE SSD卡BHD025400G MLC SSD PCIe接口BHD026600G MLC SSD PCIe接口BHD024800G MLC SSD PCIe接口BHD0231.2T MLC SSD PCIe接口BHD0272.4T MLC SSD PCIe接口其他硬盘及组件其他硬盘及组件BHE00264G SATA-DOM硬盘BHD02880G MLC SSD 2.5BHD029120G MLC SSD 2.5BHD004160G MLC SSD 2.5BHD030240G MLC SSD 2.5BHD010300G MLC SSD 2.5BHD016480G MLC SSD 2.5BHD009600G MLC SSD 2.5BHD019800G MLC SSD 2.5TYP004500GB SATA（桌面级）BPT0201T SATA（桌面级）BSA012300G热插拔SAS硬盘(1万5千转)RAID卡RAID卡SPT0POC00R06Inspur SAS3008iMR12Gbps PCIe Adapter BSS012INSPUR八通道高性能SAS3008卡IMR（可选Raid key)SPT0THR00K02Inspur RAID5Upgrate key for SAS3008iMR12Gbps PCIe Adapter BSS013INSPUR八通道高性能3008Raid KeySPT0POC00R02Inspur RAID1GB9271-8i6Gbps PCIe Adapter by Avago BRE028八通道SAS高性能RAID-9271（1G缓存)SPT0THR00D02Inspur iBBU09Battery Backup Unit Upgrade for RAID2208MR,9271-8i PCIe Adapter BDC020八通道SAS高性能RAID-9271电池SPT0THR00D05Inspur Supercapacitor Upgrade for RAID2208MR,9271-8i PCIe Adapter BDC022八通道SAS高性能RAID-9271缓存断电保护模块SPT0THR00K03Inspur RAID CacheCade Pro2.0Key for2208MR,3108MR,9271-8i,9361-8i BRE032RAID卡功能模块-CacheCade模块SPT0POC00R0G Inspur RAID2GB PM806012Gbps PCIe Adapter BDC027INSPUR八通道高性能SAS RAID卡RS0820P(2G缓存)SPT0THR00D01Inspur Supercapacitor for RAID PM8060(1GB,2GB)PCIe Adapter by Adaptec BRE038INSPUR八通道高性能SAS RS0810P缓存断电保护模块SPT0POC00R09Inspur RAID1GB9361-8i12Gbps PCIe Adapter by Avago BRE034八通道SAS高性能RAID-9361（1G缓存)SPT0THR00D03Inspur Supercapacitor Upgrade for RAID1GB9361-8i PCIe Adapter by LSI BDC026八通道SAS高性能RAID-9361（1G缓存)缓存断电保护模块SPT0POC00R08Inspur RAID2GB9361-8i12Gbps PCIe Adapter by Avago BRD036八通道SAS高性能RAID-9361（2G缓存)SPT0THR00D04Inspur Supercapacitor Upgrade for RAID9361-8i(2GB),3108MR(2GB,4GB)by LSI BDC025八通道SAS高性能RAID-9361（2G缓存)缓存断电保护模块SPT0POC00R07Inspur RAID4GB9364-8i12Gbps PCIe Adapter by Avago BRD037八通道SAS高性能LSI RAID-9364（4G缓存+缓存断电保护模块）SPT0POC00R0A Inspur RAID4GB3108MR12Gbps PCIe Adapter BRE040INSPUR八通道高性能SAS RAID卡RS0840L3(4G缓存)电源电源SPT0PSU00001Inspur CRPS800W Platinum Hot Swap Power SupplySPT0PSU00002Inspur CRPS1200W Platinum Hot Swap Power SupplySPT0PSU00003Inspur CRPS550W Platinum Hot Swap Power SupplySPT0PSU00004Inspur CRPS800W Titanium Hot Swap Power SupplySPT0PSU00005Inspur CRPS800W-48VDC Hot Swap Power SupplySPT0PSU00006Inspur CRPS800W336VDC Hot Swap Power SupplyBDY096300W电源适用于NP3020M4BDY097550W白金电源适用于NP3020M4光纤通道连接配件光纤通道连接配件SPT0POC00B01Inspur LPe1250Single Port8Gb Fibre Channel HBA by Emulex TAF019光纤通道HBA卡,FC8Gb,单端口,LC接口SPT0POC00B02Inspur LPe12002Dual Port8Gb Fibre Channel HBA by Emulex TAF021光纤通道HBA卡,FC8Gb,双端口,LC接口SPT0POC00B05Inspur QLE2560Single Port8Gb Fibre Channel HBA by Qlogic TAF019光纤通道HBA卡,FC8Gb,单端口,LC接口SPT0POC00B06Inspur QLE2562Dual Port8Gb Fibre Channel HBA by Qlogic TAF021光纤通道HBA卡,FC8Gb,双端口,LC接口SPT0POC00B03Inspur LPe16000B Single Port16Gb Fibre Channel HBA by Emulex TAF028光纤通道HBA卡,FC16Gb,单端口,LC接口SPT0POC00B07Inspur QLE2670Single Port16Gb Fibre Channel HBA by Qlogic TAF028光纤通道HBA卡,FC16Gb,单端口,LC接口SPT0POC00B04Inspur LPe16002B Dual Port16Gb Fibre Channel Adapter by Emulex TAF029光纤通道HBA卡,FC16Gb,双端口,LC接口转接卡转接卡BKZ013PCI-E转接卡套件（NF8460M3）PCI-E转接卡套件（NF8460M4）网卡及远程管理卡网卡及远程管理卡SPT0POC00W01Inspur I350PCIe1Gb2Port Base-T Ethernet Adapter BNT004双口千兆网卡（RJ45接口）SPT0POC00W02Inspur I350PCIe1Gb4Port Base-T Ethernet Adapter BNT010四口千兆网卡（RJ45接口）SPT0POC00W06Inspur I350PCIe1Gb4Port SPF Ethernet Adapter BNT042四口千兆网卡（光纤接口）SPT0POC00W07Inspur82599ES PCIe10Gb1Port with Multi-mode SFP+module Ethernet Adapter单口万兆网卡（光纤接口含多模模块）SPT0POC00W09Inspur MCX312B-XCCT PCIe10Gb2Port SFP+Ethernet Adapter BNT009双口万兆网卡（光纤接口）SPT0POC00W08Inspur82599ES PCIe10Gb2Port with Multi-mode SFP+module Ethernet Adapter双口万兆网卡（光纤接口含多模模块）SPT0POC00W0J Inspur X710PCIe x8+x110Gb2Port SFP+Ethernet Daughter Card出厂前升级INSPUR双口万兆FLOM网卡（光纤接口），不含光模块SPT0POC00W0H Inspur82599ES PCIe x8+x110Gb1Port SFP+Ethernet Adapter BNT034INSPUR单口万兆网卡（光纤接口），不含光模块SPT0POC00W0K Inspur CX3PCIe x8+110Gb1Port SFP+Ethernet Adapter BNT034INSPUR单口万兆网卡（光纤接口），不含光模块SPT0POC00W0G Inspur82599ES PCIe x8+x110Gb2Port SFP+Ethernet Adapter BNT035INSPUR双口万兆网卡（光纤接口），不含光模块SPT0POC00W0L Inspur CX3PCIe x8+110Gb2Port SFP+Ethernet AdapterSPT0THR00S01Inspur1Gb Single-Mode SPF+Optical Module INSPUR千兆网卡光模块（单模，搭配INSPUR万兆网卡使用）SPT0THR00S02Inspur1Gb Multi-Mode SFP+Optical Module INSPUR千兆网卡光模块（多模，搭配INSPUR万兆网卡使用）SPT0THR00S03Inspur10Gb Single-Mode SFP+Optical Module BNT036INSPUR万兆网卡光模块（单模，搭配INSPUR万兆网卡使用）SPT0THR00S04Inspur10Gb Multi-Mode SFP+Optical Module BNT037INSPUR万兆网卡光模块（多模，搭配INSPUR万兆网卡使用）SPT0POC00W0A Inspur T580-SO-CR PCIe40Gb2Port QSFP+Ethernet Adapter BNT039双口40GbE网卡光纤接口，不含光模块，需搭配40G网卡线缆使用SPT0POC00W03Inspur X540PCIe10Gb2Port Base-T Ethernet Adapter BNT030双口万兆网卡（RJ45接口）SPT0POC00W04Inspur I350PCIe x8+11Gb4Port Base-T Ethernet Adapter出厂前升级INSPUR四口千兆网卡（RJ45接口）SPT0POC00W05Inspur X540PCIe x8+110Gb2Port Base-T Ethernet Adapter INSPUR双口万兆网卡（RJ45接口）BNT002单口千兆网卡（光纤接口）BNT005双口千兆网卡（光纤接口）BNT008单口万兆网卡（光纤接口）BNT040双口40GbE CNA网卡光纤接口，不含光模块，需搭配40G网卡线缆使用BNT04140G网卡线缆，15米Infiniband card Infiniband cardSPT0POC00C01Inspur MCX353A-FCBT56Gb1Port with QSFP Module InfiniBand Adapter TAF027HCA卡(单口IB卡56GB)SPT0POC00C02Inspur MCX353A-FCBT56Gb2Port with QSFP Module InfiniBand Adapter HCA卡(双口IB卡56GB)软驱、光驱、刻录机软驱、光驱、刻录机BHU001U盘软驱MGQ002标准DVDBCD006DVD刻录机BCD017USB DVD刻录机BCD026SLIM DVD刻录机显卡显卡BXK039显卡K420（显存1G）BXK040显卡K620（显存2G）BXK041显卡K2200（显存4G）显示器显示器BOV01419.5寸液晶显示器BOV00921.5寸液晶显示器BOV01523.6寸液晶显示器RACK机柜及组件RACK机柜及组件BOG022浪潮42U标准服务器机柜（无PDU）/2000mm×1100mm×600mm（H×D×W）BPK0396口PDU国标万用插口/10ABPK03821口PDU国标万用插口/32ABTP00140公斤机柜托盘BTP002100公斤机柜托盘BOK001键盘B0M001鼠标BOQ008四合一切换器17寸液晶8口/USBBOQ009四合一切换器17寸液晶16口/USBBOQ0018口切换器BOQ00516口切换器其他其他BPT002配件，背板_INSPUR_SAS_2.5X8BPT017硬盘模组_2.5×8BPT003配件，背板_INSPUR_SAS12G_4X3.5BPT004配件，背板_INSPUR_SAS12G_8X2.5BPT008配件，SAS线BPT010配件，风扇BPT011配件，硬盘托架_2.5寸BPT012配件，硬盘托架_3.5寸BPT013配件，包装箱BPT014配件，电源线BPT015配件，服务器用户手册及睿捷服务器套件光盘BPL001NF5270M42U前面板V08WY0208000B014SPT0BKD00001Inspur Milestone42U3.5"x4Drive Backplane Kit SPT0BKD00002Inspur Milestone42U Rear2.5"x2Drive Backplane Kit SPT0BKD00003Inspur Milestone42U2.5"x8Drive Backplane Kit。

华硕主板编号含义

近端时间华硕对旗下主板产品启用了新的命名方式，在保留了原有的一些独特规则后，加入了芯片组的信息，同时对部分编号做了更改，新的命名规则为:cpu+芯片组+内存+独家设计+板型特征+产品后缀，也就是ABCD——EF的形式第一项表示采用接口或支持的CPU“P”开头的是Intel的芯片组。

后面的数字代表接口代数，比如LGA 1156要比LGA1366出的时间晚，所以为P7。

由于AMD得AM2+接口提供了对AM3接口的支持，所有编号为M4的一部分为AM3接口，一部分为AM2+/AM2接口，但都是能支持AM3处理器的。

而M3系列推出较早，采用AM2+/AM2接口，大部分也是支持AM3处理器。

第二项代表主板的芯片组，其中AMD以A开头，比如A785,A79，intel直接是芯片组的名称。

不过这仅是适用于采用新命名规则的新产品，之前推出的产品以字母命名较多，XM后缀的一般为Micro-ATX板型的集成主板，X为不定项，一般有“E”，“V”，“C”等，代表不同的定位命名的第三项是内存规格，假如没有编号就表示默认的DDR2内存，T为ddr3内存，C为COMBO，即可以使用DDR2和DDR3的内存。

旧型号产品也有编号为“3”的，也是使用DDR3内存的意思、而部分旧型号产品的第三项数字交大，不代表内存，不如“P6T7 WS supercomputer”就是一款拥有7个PCI—E显卡的插槽的产品。

第四项是少数主板才有，编号为“D”，代表“XTREME DESIGN",即华硕近期整合原先特色技术后推出的巅峰设计系列。

主要包含性能类技术，如Xtreme Phase超级多相供电技术，TurboV只能超频软件，Turbo key一键超频技术等等；安全类技术，如Anti—EMI（板载有静电放电ESD芯片）抗电磁干扰技术，Q—Shield背部挡板，稳定性技术，如Stack cool 3+（与技嘉的两倍铜类似），超耐久电容（采用日系大厂固态电容）。

超微(supermicro)服务器产品命名原则

产品命名原则
• 系统命名原则 6 0 1 5
1 2 3 4
1.支援的CPU种类 8：4路的CPU 4：双路CPU 5：单路CPU 1,2,4：AMD CPU 2.CPU架构种类 0：X86 1：ltanium 3.系统高度 1～4U 4.系统世代 5.系统使用的晶片组种类
B
5
- T B
6 7
+
8
6.系统使用的硬碟介面 T:SATA S:SCSI 3:SAS U:配SAS背板，需另选购UI/O卡** 7.系统的颜色
－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－－
C2=Core 2 CPU PD=P4 dual core 800/1333MHZ(LGA775)
产品命名原则
• 主板命名原则
第2码：处理器架构支援
D=支援双路处理器（Dual CPU,DP) S=支援单路处理器（Single CPU,SP) Q=支援4路处理器（Qual CPU,QP)
V：银色 B：黑色空白：白色 8.额外升级功能 ex.16个记忆体插槽DIMM
产品命名原则
• 主板命名原则
第3码：PC工作站系列晶片组支援
C2 SP: B:P35,G33,X38(Barelake-G/P/V/X) PD SP: B:946GZ/G965/P965
产品命名原则
• 主板命名原则
第3码：AMD晶片组支援
A+100 200 800系列 A=AMD Chipset(AMD 8131/AMD 8132) C=Nvidia Chipset(nvidia nforce pro 2200/ 2050) S=serverworks chipset(HT2000/HT1000) －－－－－－－－－－－－－－－－－－－－－－－－－－－ A+1000 2000 8000系列 M=nvidia chipset(MCP55/NEC UPD720400)

贴片元件代码查询（根据代码查找芯片型号）

贴⽚元件代码查询（根据代码查找芯⽚型号）Manufacturer abbreviations:Agi Agilent (was HP).ON ON Semiconductors (was Motorola). CJe Changjiang Electronics CO., LTD Phi Philips.Dio Diodes Inc.--Fch Fairchild.Roh Rohm.HP Hewlett-Packard (Now Agilent).SGS SGS-Thompson.Inf Infineon (was Siemens).Sie Siemens (now Infineon).ITT ITT Semiconductors.Sil Siliconix (Vishay-Silliconix).MC Mini-Circuits.STM STMicroelectronicsMot Motorola (now ON Semiconductors).Tem Temic Semiconductors.Nat National Semiconductor.Tfk Telefunken (Vishay-Telefunken). Nec NEC.Tok Toko Inc.NJRC New Japan Radio Co.Zet Zetex.制作：Ｃｏｏｌｂｏｒ　ＸｉｅＣｏｏｌｂｏｒ⼯作室Ｅ－Ｍａｉｌ：ｃｏｏｌｂｏｒ＠１６３．ｃｏｍ２００３年１２⽉１０⽇Code Device Manufacturer Base Package Leaded Equivalent/Data0 2SC3603 Nec CX SOT173 N pn RF fT 7GHz005 SSTPAD5 Sil J -PAD-5 5pA leakage diodep01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7t01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k701 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 010 SSTPAD10 Sil J - PAD-10 10pA leakage diode 011SO2369R SGS R SOT23R 2N236902 BST82 Phi M - n-ch mosfet 80V 175mA02 MRF5711L Mot X SOT143 npn RF MRF57102 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 02 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain p02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias rest02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res03 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 03 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA03 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA03 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA04 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA04 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA04 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA04 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA04 MRF5211L Mot X SOT143 pnp RF MRF52104 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.5 dBm -04 PMSS3904 Phi N SOT323 2N3904t04 PMBS3904 Phi N SOT23 2N390405 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 05 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA05 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA05 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA05F TSDF1205R Tfk WQ - fT12GHz npn 4V 5mA06 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 06 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA06 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA06 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA-06 PMSS3906 Phi N SOT323 2N3906t06 PMBS3906 Phi N SOT23 2N3906020 SSTPAD20 Sil J - PAD-20 20pA leakage diode 050 SSTPAD50 Sil J - PAD-50 50pA leakage diode 081 SO2369AR SGS R SOT23R 2N2369A09 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA09 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA0A MUN5111DW1 Mot DO SOT363 dual pnp dtr 10k+10k0A DTC125TUA Roh N SC70 npn dtr R2 100k 50V 100mA0A DTC125TKA Roh N SC59 npn dtr R2 100k 50V 100mA0B MUN5112DW1 Mot DO SOT363 dual pnp dtr 22k+22k0C MUN5113DW1 Mot DO SOT363 dual pnp dtr 47k+47k0D MUN5114DW1 Mot DO SOT363 dual pnp dtr 10k+47k0E MUN5115DW1 Mot DO SOT363 dual pnp dtr R1 10k0F MUN5116DW1 Mot DO SOT363 dual pnp dtr R1 4k70G MUN5130DW1 Mot DO SOT363 dual pnp dtr 1k0+1k00H MUN5131DW1 Mot DO SOT363 dual pnp dtr 2k2+2k20J MUN5132DW1 Mot DO SOT363 dual pnp dtr 4k7+4k70K MUN5133DW1 Mot DO SOT363 dual pnp dtr 4k7+47k0L MUN5134DW1 Mot DO SOT363 dual pnp dtr 22k+47k0M MUN5135DW1 Mot DO SOT363 dual pnp dtr 2k2+47kCode Device Manufacturer Base Package Leaded Equivalent/Data12SC3587Nec CX -npn RF fT10GHz1BA277Phi I SOD523VHF Tuner band switch diode1 (red)BB669Sie I SOD32356-2.7 pF varicap10MRF9411L Mot X SOT143npn Rf 8GHz MRF94110A PZM10NB2A Phi A SOT346dual ca 10V 0.3W zener10A ZXRE1004FF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 3% 10B ZXRE1004EF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 2% 10C ZXRE1004DF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 1% 10D ZXRE1004CF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 0.5% 10F ZXRE4041FF Zet G SOT23Micropower 1.222V Voltage ref. 3%10G ZXRE4041EF Zet G SOT23Micropower 1.222V Voltage ref. 2%10H ZXRE4041DF Zet G SOT23Micropower 1.222V Voltage ref. 1%10J ZXRE4041CF Zet G SOT23Micropower 1.222V Voltage ref. 0,5% 10V PZM10NB Phi C SOT34610V 0.3W zener10Y BZV49-C10Phi O SOT8910V 1W zener11MRF9511L Mot X SOT143npn RF 8GHz MRF95111MUN5311DW1Mot DP SOT363npn/pnp dtr 10k+10k11PDTA114EU Phi N SOT416pnp dtrp11PDTA114TT Phi N SOT23pnp dtrt11PDTA114TT Phi N SOT23pnp dtr11A PZM11NB2A Phi A SOT346dual ca 11V 0.3W zener11A MMBD1501A Nat C SOT23Si diode 200V 100mA11V PZM11NB Phi C SOT34611V 0.3W zener11Y BZV49-C11Phi O SOT8911V 1W zener12MUN5312DW1Mot DP SOT363npn/pnp dtr 22k+22k12DTA123EUA Rho N SC70pnp dtr 2k2+2k2 50V 100ma12DTA123EKA Rho N SC59pnp dtr 2k2+2k2 res 50V 100map12PDTC114TT Phi N SOT23npn dtrt12PDTC114TT Phi N SOT23npn dtr12A MMBD1502A Nat K SOT23Si diode 200V 100mA12A PZM12NB2A Phi A SOT346dual ca 12V 0.3W zener12E ZC2812E Zet D SOT23dual series RF schottky15V 20mA12F ZXRE125FF ZET G SOT23Micropower 1.22V Voltage ref. 3%12G ZXRE125EF ZET G SOT23Micropower 1.22V Voltage ref. 2%12H ZXRE125DF ZET G SOT23Micropower 1.22V Voltage ref. 1%12J ZXRE125CF ZET G SOT23Micropower 1.22V Voltage ref. 0,5%12V PZM12NB Phi C SOT34612V 0.3W zener12Y BZV49-C12Phi O SOT8912V 1W zener13DTA143EUA Rho N SC70pnp dtr 4k7+4k7 50V 100ma13DTA143EKA Rho N SC59pnp dtr 4k7+4k7 50V 100ma13DTA143ECA Rho N SOT23pnp dtr 4k7+4k7 50V 100ma13t BC846BPN Phi N SOT363BC546B13s BAS125Sie C SOT23Schottky sw 24V 100mA13s BAS125W Sie C SOT323Schottky sw 24V 100mA13MA4CS103A M/A C SOT23Schottky RF 20V 100mA13MUN5313DW1Mot DP SOT363npn/pnp dtr 47k+47k13A MMBD1503A Nat D SOT23dual Si diode 200V 100mA13A PZM13NB2A Phi A SOT346dual ca 13V 0.3W zener13E ZC2813E Zet A SOT23dual ca RF schottky15V 20mA13V PZM13NB Phi C SOT34613V 0.3W zener13Y BZV49-C13Phi O SOT8913V 1W zener14s BAS125-04Sie D SOT23Dual series Schottky 25V 100mA14s BAS125-04W Sie D SOT323Dual series Schottky 25V 100mA14BAT114-099R Sie DQ -Quad Schottky crossover ring14DTA114EUA Roh N SC70pnp dtr 10k + 10k14DTA114EKA Roh N SC59pnp dtr 10k + 10k14MUN5314DW1Mot DP SOT363npn/pnp dtr 10k R114DTA114ECA Roh N SOT23pnp dtr 10k + 10k14A MMBD1504A Nat B -dual cc Si diode 200V 100mA15s BAS125-05Sie B SOT23dual cc Schottky 25V 100mA15s BAS125-05W Sie B SOT323dual cc Schottky 25V 100mA15DTA124EUA Roh N SC70pnp dtr 30V 50mA 22k+22k15DTA124EKA Roh N SC59pnp dtr 30V 50mA 22k+22k15DTA124ECA Roh N SOT23pnp dtr 30V 50mA 22k+22k15MUN5315DW1Mot DP SOT363npn/pnp dtr 10k R115MMBT3960Mot N -2N396015A MMBD1505A Nat A -dual ca Si diode 200V 100mA 15A PZM15NB2A Phi A SOT346dual ca 15V 0.3W zener15V PZM15NB Phi C SOT34615V 0.3W zener15Y BZV49-C15Phi O SOT8915V 1W zenerp16PDTC114ET Phi N SOT23npn dtrt16PDTC114EU Phi N SOT323npn dtr16s BAS125-06Sie A SOT23dual ca Schottky 25V 100mA 16s BAS125-06W Sie A SOT323dual ca Schottky 25V 100mA 16MUN5316DW1Mot DP SOT363npn/pnp dtr 4k7 R116DTA144EUA Roh N SC70pnp dtr 30V 50mA 47k+47k 16DTA144EKA Roh N SC59pnp dtr 30V 50mA 47k+47k 16V PZM16NB Phi C SOT34616V 0.3W zener16Y BZV49-C16Phi O SOT8916V 1W zener17s BAS125-07Sie S SOT143dual Schottky 25V 100mA 17s BAS125-07W Sie S SOT343dual Schottky 25V 100mAp17PDTC124ET Phi N SOT23npn dtrt17PDTC124EU Phi N SOT323npn dtr18BFP181T Tfk X -npn Rf fT 7.8GHz 10V 20mA 18PDTC143ZK Phi N SOT346npn dtr 4k7+47kp18PDTC143ZT Phi N SOT23npn dtr 4k7+47kt18PDTC143ZT Phi N SOT23npn dtr 4k7+47k18V PZM18NB Phi C SOT34618V 0.3W zener18Y BZV49-C18Phi O SOT8918V 1W zener19PDTA143ZK Phi N SOT346pnp dtr 4k7+47k19DTA115EUA Rho N SC70pnp dtr 100k+100k 50V 100ma 19DTA115EKA Rho N SC59pnp dtr 100k+100k 50V 100ma p19PDTA143ZT Phi N SOT23pnp dtr 4k7+47kt19PDTA143ZT Phi N SOT23pnp dtr 4k7+47k100SSTPAD100Sil J SOT23PAD-100 100pA leakage diode 101PZM10NB1Phi C SOT34610V 0.3W zener102PZM10NB2Phi C SOT34610V 0.3W zener103PZM10NB3Phi C SOT34610V 0.3W zener111PZM11NB1Phi C SOT34611V 0.3W zener111DTA113ZUA Roh N SC70pnp dtr 1k+10k 50V 100mA 112PZM11NB2Phi C SOT34611V 0.3W zener113PZM11NB3Phi C SOT34611V 0.3W zener113DTA143ZUA Roh N SC70pnp dtr 4k7+47k 50V 100mA 121PZM12NB1Phi C SOT34612V 0.3W zener121DTC113ZUA Roh N SC70npn dtr 1k+10k 50V 100mA 122PZM12NB2Phi C SOT34612V 0.3W zener123PZM12NB3Phi C SOT34612V 0.3W zener123DTC143ZUA Roh N SC70npn dtr 4k7+47k 50V 100mA 131PZM13NB1Phi C SOT34613V 0.3W zener132PZM13NB2Phi C SOT34613V 0.3W zener132DTA123JUA Roh N SC70pnp dtr 2k2+47k 50V 100mA 133PZM13NB3Phi C SOT34613V 0.3W zener142DTA123JUA Roh N SC70npn dtr 2k2+47k 50V 100mA 151PZM15NB1Phi C SOT34615V 0.3W zener152PZM15NB2Phi C SOT34615V 0.3W zener153PZM15NB3Phi C SOT34615V 0.3W zener156DTA144VUA Roh N SC70pnp dtr 47k+10k 50V 100mA 161PZM16NB1Phi C SOT34616V 0.3W zener162PZM16NB2Phi C SOT34616V 0.3W zener163PZM16NB3Phi C SOT34616V 0.3W zener166DTC144VUA Roh N SC70npn dtr 47k+10k 50V 100mA 179FMMT5179Zet N -2N5179181PZM18NB1Phi C SOT34618V 0.3W zener182PZM18NB2Phi C SOT34618V 0.3W zener183PZM18NB3Phi C SOT34618V 0.3W zener1A BC846A Phi N SOT23BC546A1A BC846AT Phi N SOT416BC546A1Ap BC846A Phi N SOT23BC546A1At BC846A Phi N SOT23BC546A1At BC846AW Phi N SOT323BC546A1A-BC846AW Phi N SOT323BC546A1A FMMT3904Zet N SOT232N39041A MMBT3904Mot N SOT232N39041A IRLML2402IR F SOT23n-ch mosfet 20V 0.9Ap1A PMMT3904Phi N SOT232N3904p1A PXT3904Phi N SOT892N3904t1A PMMT3904Phi N SOT232N3904t1A PMST3904Phi N SOT3232N3904-1A PMST3904Phi N SOT3232N39041AM MMBT3904L Mot N SOT232N39041B BC846B Phi N SOT23BC546B1B BC846BT Phi N SOT416BC546B1Bp BC846B Phi N SOT23BC546B1Bt BC846B Phi N SOT23BC546B1Bt BC846BW Phi N SOT323BC546B1B-BC846BW Phi N SOT323BC546B1B FMMT2222Zet N SOT232N22221B MMBT2222Mot N SOT232N22221B IRLML2803IR F SOT23n-ch mosfet 30V 0.9Ap1B PMBT2222Phi N SOT232N2222t1B PMBT2222Phi N SOT232N2222t1B PMST2222Phi N SOT2332N2222-1B PMST2222Phi N SOT3232N22221Bs BC817UPN Sie N SC74-1Cp BAP50-05Phi B SOT23dual cc GP RF pin diode 1C FMMT-A20Zet N SOT23MPSA20 1C MMBTA20L Mot N SOT23MPS39041C IRLML6302IR F SOT23p-ch mosfet 20V 0.6A1Cs BC847S Sie-SOT363BC4571Dp BC846Phi N SOT23BC4561Dt BC846Phi N SOT23BC4561Dt BC846W Phi N SOT323BC4561D-BC846W Phi N SOT323BC4561D MMBTA42Mot N SOT23MPSA42 300V npn1D IRLML5103IR F SOT23p-ch mosfet 30V 0.6Ap1D PMBTA42Phi N SOT23MPSA42 300V npnp1D PXTA42Phi N SOT89MPSA42 300V npnt1D PMBTA42Phi N SOT23MPSA42 300V npnt1D PMSTA42Phi N SOT323MPSA42 300V npn1Ds BC846U Sie N SC74BC4561Ds BC846U Sie-SOT363BC4561DN2SC4083Roh N -npn 11V 3.2GHz TV tuners 1DR MSD1328R Mot N SOT346npn gp 25V 500mA 1E BC847A Phi N SOT23BC547A1E BC847AT Phi N SOT416BC547A1Ep BC847A Phi N SOT23BC547A1Et BC847A Phi N SOT23BC547A1Et BC847A Phi N SOT323BC547A1E-BC847A Phi N SOT323BC547A1ER BC847AR Phi R SOT23R BC547A1E FMMT-A43Zet N -MPSA431E MMBTA43Mot N SOT23MPSA43 200V npnt1E PMBTA43Mot N SOT23MPSA43 200V npnt1E PMSTA43Mot N SOT323MPSA43 200V npn1Es BC847A Sie N SOT23BC4571Es BC847AW Sie N SOT323BC4571EN2SC4084Roh N -npn 20V 2.0GHz TV tuners 1F BC847B Phi N SOT23BC547B1F BC847BT Phi N SOT416BC547B1Fs BC847B Sie N SOT23BC547B1Fs BC847BT Sie N SC75BC547B1Fs BC847BW Sie N SOT323BC547B1Fp BC847B Phi N SOT23BC547B1Ft BC847B Phi N SOT23BC547B1Ft BC847BW Phi N SOT323BC547B1F-BC847BW Phi N SOT323BC547B1FR BC847BR Phi R SOT23R BC547B1F MMBT5550Mot N SOT232N5550 140V npnp1F PMBT5550Phi N SOT232N5550 140V npnt1F PMBT5550Phi N SOT232N5550 140V npnt1F PMST5550Phi N SOT3232N5550 140V npn1FZ FMBT5550Zet N SOT232N5550 140V npn1G BC847C Phi N SOT23BC547C1G BC847CT Phi N SOT416BC547C1Gt BC847CW Phi N SOT323BC547C1G-BC847CW Phi N SOT323BC547C1Gs BC847C Sie N SOT23BC547C1Gs BC847CW Sie N SOT323BC547C1GR BC847CR Phi R SOT23R BC547C1GT SOA06SGS N SOT23MPSA061G FMMT-A06Zet N SOT23MPSA061G MMBTA06Mot N SOT23MPSA06p1G PMMTA06Phi N SOT23MPSA06t1G PMMTA06Phi N SOT23MPSA06t1G PMMTA06Phi N SOT323MPSA061GM MMBTA06Mot N SOT23MPSA061Hp BC847Phi N SOT23BC5471Ht BC847Phi N SOT23BC5471Ht BC847W Phi N SOT323BC5471H-BC847W Phi N SOT323BC5471H FMMT-A05Zet N -MPSA051H MMBTA05Mot N SOT23MPSA05t1H MMBTA05Phi N SOT323MPSA051HT SOA05SGS N SOT23MPSA051J BC848A Phi N SOT23BC548A1Js BC848A Sie N SOT23BC548A1Js BC848AW Sie N SOT323BC548A1J FMMT2369Zet N SOT232N23691J MMBT2369Mot N SOT23MPS23691Js BCV61A Sie VQ SOT143npn current mirror hFe 180 1Jp BCV61A Phi VQ SOT143npn current mirror hFe 180 p1J PMBT2369Phi N SOT232N2369t1J PMBT2369Phi N SOT232N2369t1J PMBT2369Phi N SOT3232N23691JA MMBT2369A Mot N SOT23MPS2369A1JR BC848AR Phi R SOT23R BC548A1JZ BC848A Zet N SOT23BC548A1K BC848B ITT N SOT23BC548B1Kp BC848B Phi N SOT23BC548B1Ks BC848B Sie N SOT23BC548B1K MMBT6428Mot N SOT23MPSA18 50Vp1K PMBT6428Phi N SOT23MPSA18 50Vt1K PMBT6428Phi N SOT23MPSA18 50Vt1K PMBT6428Phi N SOT323MPSA18 50V1K FMMT4400Zet N SOT232N44001Ks BCV61B Sie VQ SOT143B npn current mirror hFe 290 1Kp BCV61B Phi VQ SOT143B npn current mirror hFe 290 1KR BC848BR Phi R SOT23R BC548B1KM MMBT6428L Mot N SOT23MPSA18 50V1KZ FMMT4400Zet N SOT232N44001L BC848C ITT N SOT23BC548C1Lp BC848C Phi N SOT23BC548C1Ls BC848C Sie N SOT23BC548C1Ls BC848CW Sie N SOT323BC548C1L MMBT6429Mot N -MPSA18 45V1L FMMT4401Zet N -2N44011L BCV61C Sie VQ SOT143B npn current mirror hFe 520 1Lp BCV61C Phi VQ SOT143B npn current mirror hFe 520 p1L PMBT6429Phi N SOT23MPSA18 45Vt1L PMBT6429Phi N SOT23MPSA18 45Vt1L PMBT6429Phi N SOT323MPSA18 45V1LR BC848CR Phi R SOT23R BC548C1Mp BC848Phi N SOT23BC5481M MMBTA13Mot N SOT23MPSA13 darlington1Mp BCV61Phi VQ SOT143B npn current mirror1M FMMT-A13Zet N SOT23MPSA13p1M PXTA13Phi N SOT89MPSA13 darlingtonp1M PMBTA13Phi N SOT23MPSA13 darlingtont1M PMBTA13Phi N SOT23MPSA13 darlington1N FMMT-A14Zet N SOT23MPSA141N MMBTA14Mot N SOT23MPSA14 darlington1N5ZTX11N15DF Zet N SOT23npn 15V 3A low saturation V p1N PMBTA14Mot N SOT23MPSA14 darlingtonp1N PXTA14Mot N SOT89MPSA14 darlingtont1N PMBTA14Mot N SOT23MPSA14 darlington1P FMMT2222A Zet N -2N2222A1P MMBT2222A Mot N SOT232N2222A1P BC847PN Sie DI -pnp/npn separate pair gp AF p1P PMBT2222A Phi N SOT232N2222Ap1P PXT2222A Phi N SOT892N2222At1P PMBT2222A Phi N SOT232N2222At1P PMST2222A Phi N SOT3232N2222A1Q MMBT5088Mot N SOT23MPSA18 Vce 30Vp1Q PMBT5088Phi N SOT23MPSA18 Vce 30Vt1Q PMBT5088Phi N SOT23MPSA18 Vce 30Vt1Q PMST5088Phi N SOT323MPSA18 Vce 30V1R MMBT5089Mot N SOT23MPSA18 Vce 25Vt1R PMST5089Phi N SOT323MPSA18 Vce 25V1S MMBT2369A Nat N SOT232N2369A 500MHz sw npn 1S MSC3130Mot H SOT346npn RF fT 1.4GHz 10V 1T MMBT3960A Mot N -2N3960A1U MMBT2484L Mot N SOT23MPSA181V MMBT6427Mot H SOT232N6426/7 darlington npn 1Vp BF820Phi N SOT23npn 300V 50mA BF4201Vt BF820Phi N SOT23npn 300V 50mA BF4201Vt BF820W Phi N SOT323npn 300V 50mA BF4201V-BF820W Phi N SOT323npn 300V 50mA BF4201W FMMT3903Zet N SOT232N39031Wp BF821Phi N SOT23pnp 300V 50mA BF4211Wt BF821Phi N SOT23pnp 300V 50mA BF4211W t BF822W Phi N SOT323pnp 300V 50mA BF4211W -BF822W Phi N SOT323pnp 300V 50mA BF4211X MMBT930L Mot N SOT23MPS39041Xp BF822Phi N SOT23npn 250V 50mA BF4221Xt BF822Phi N SOT23npn 250V 50mA BF4221Y MMBT3903Mot N SOT232N39031Yp BF823Phi N SOT23pnp 250V 50mA BF4231Yt BF823Phi N SOT23pnp 250V 50mA BF4231Z BAS70-06Zet A SOT23dual RF CA schottky diode 1Z MMBT6517Mot N SOT232N6517 npn Vce 350V Code Device Manufacturer Base Package Leaded Equivalent/Data2BAT62-02W Sie I SCD80BAT16 schottky diode2 (blue)BAR64-03W Sie I SOD323pin diode22SC3604Nec CX -npn RF fT8GHz 12dB@2GHz2 (white) BB439Sie I SOD32329-5 pF varicap20MRF5811Mot X SOT143npn Rf fT 5GHz 0.2A-20PDTC114WU Phi N SOT323npn dtr20F TSDF1220Tfk X SOT143fT 12GHz npn 6V 20mA20V PZM20NB Phi C SOT34620V 300mW zener20Y BZV49-C20Phi O SOT8920V 1W zener21Gali-21MC AZ SOT89DC-8GHz MMIC amp 14 dB gain 22MMBT4209Nat N SOT23pnp sw 850MHz 2N420922DTC123EUA Rho N SC70npn dtr 2k2+2k2 50V 100ma 22DTC123EKA Rho N SC59npn dtr 2k2+2k2 50V 100ma 22V PZM22NB Phi C SOT34622V 300mW zener22Y BZV49-C22Phi O SOT8922V 1W zener23MMBT3646Nat N SOT23npn sw 350MHz 2N364623DTC143EUA Roh N SC70pnp dtr 50V 100mA 4k7+ 4k7 23DTC143EKA Roh N SC59pnp dtr 50V 100mA 4k7+ 4k7 -23PDTA114TU Phi N SOT323pnp dtr R1 10kt23PDTA114TU Phi N SOT323pnp dtr R1 10k24MMBD2101Nat C SOT23Si diode 100V 200mA23U TK61023S Tok-SOT23-5Voltage detector23U TK16123Tok-SOT23L ADJ Digital Delay Line24DTC114ECA Roh N SOT23npn dtr 50V 100mA 10k + 10k 24DTC114EUA Roh N SC70npn dtr 50V 100mA 10k + 10k 24DTC114EKA Roh N SC59npn dtr 50V 100mA 10k + 10k 242SC5006Nec N -npn RF fT 4.5GHz @3V 7mA 24FZHT2431F02Zet H SOT23High temp. Adjustable zener shunt Reg.-24PDTC114TU Phi N SOT323npn dtr R1 10kt24PDTC114TU Phi N SOT323npn dtr R1 10k24V PZM24NB Phi C SOT34624V 300mW Zener24Y BZV49-C24Phi O SOT8924V 1W zener25MMBD2102Nat K SOT23Si diode 100V 200mA25DTC124ECA Roh N SOT23npn dtr 50V 100mA 22k + 22k 25DTC124EKA Roh N SC59npn dtr 50V 100mA 22k + 22k 25DTC124EUA Roh N SC70npn dtr 50V 100mA 22k + 22k 25U TK61025S Tok-SOT23-5Voltage detector26MMBD2103Nat D SOT23dual MMBD120126DTC144EKA Roh N SC59npn dtr 50V 30mA 47k + 47k 26DTC144EUA Roh N SC70npn dtr 50V 30mA 47k + 47k27MMBD2104Nat B SOT23dual cc MMBD120127U TK61027S Tok-SOT23-5Voltage detector27V PZM27NB Phi C SOT34627V 300mW Zener27Y BZV49-C27Phi O SOT8927V 1W zener28BFP280T Tfk W -npn RF fT 7GHz 8V 10mA 28MMBD2105Nat A SOT23dual ca MMBD1201-28PDTA114WU Phi N SOT323pnp dtr29MMBD1401Nat C SOT23Si diode 200V 100mA29DTC115EE Roh N EMT3npn dtr 100k +100k 50V 20mA 29DTC115EUA Roh N SC70npn dtr 100k +100k 50V 20mA 29DTC115EKA Roh N SC59npn dtr 100k +100k 50V 20mA 200SSTPAD200Sil J -PAD-200 200pA leakage diode201PZM20NB1Phi C SOT34620V 300mW Zener202PZM20NB2Phi C SOT34620V 300mW Zener203PZM20NB3Phi C SOT34620V 300mW Zener221PZM22NB1Phi C SOT34622V 300mW Zener222PZM22NB2Phi C SOT34622V 300mW Zener 223PZM22NB3Phi C SOT34622V 300mW Zener 241PZM24NB Phi C SOT34624V 300mW Zener 242PZM24NB Phi C SOT34624V 300mW Zener 243PZM20NB Phi C SOT34624V 300mW Zener 271PZM2.7NB1Phi C SOT346 2.7V 300mW Zener 272PZM2.7NB2Phi C SOT346 2.7V 300mW Zener 2A MMBT3906L Mot N SOT232N39062A MMBT3906W Mot N SOT3232N39062A FMMT3906Zet N SOT232N3906t2A PMBT3906Phi N SOT232N3906t2A PMST3906Phi N SOT3232N3906p2A PMBT3906Phi N SOT232N3906p2A PXT3906Phi O SOT892N39062A4PZM2.4NB2A Phi A SOT346dual 2.4V cc Zener 2A7PZM2.7NB2A Phi A SOT346dual 2.7V cc Zener 2B BC849B ITT N SOT23BC549B2Bs BC849B Sie N SOT23BC549B2Bs BC849BW Sie N SOT323BC549B2Bp BC849B Phi N SOT23BC549B2Bt BC849BW Phi N SOT323 BC549B2B-BC849BW Phi N SOT323 BC549B2B FMMT2907Zet N SOT232N29072B MMBT2907Mot N SOT23MPS2907p2B PMBT2907Phi N SOT232N2907t2B PMBT2907Phi N SOT232N29072BR BC849BR Phi R SOT23R BC549B2BZ FMMT2907Zet N SOT232N29072C BC849C ITT N SOT23BC549C2Cs BC849C Sie N SOT23BC549C2Cs BC849CW Sie N SOT323BC549C2Cp BC849C Phi N SOT23BC549C2Ct BC849C Phi N SOT23BC549C2Ct BC849CW Phi N SOT323BC549C2C-BC849CW Phi N SOT323BC549C2CR BC849CR Phi R SOT23R BC549C2CZ FMMTA70Zet N SOT23MPSA702D MMBTA92Mot N SOT23MPSA92 pnp Vce 300V p2D PMBTA92Phi N SOT23MPSA92 pnp Vce 300V p2D PXTA92Phi O SOT89MPSA92 pnp Vce 300V t2D PMBTA92Phi N SOT23MPSA92 pnp Vce 300V t2D PMSTA92Phi N SOT323MPSA92 pnp Vce 300V 2E MMBTA93Mot N SOT23MPSA93 pnp Vce 200V 2E FMMT-A93Zet N SOT23MPSA93t2E PMBTA93Phi N SOT23MPSA93 pnp Vce 200V t2E PMSTA93Phi N SOT323MPSA93 pnp Vce 200V 2F BC850B ITT N SOT23 BC550B2Fs BC850B Sie N SOT23 BC550B2Fs BC850BW Sie N SOT323 BC550B2Fp BC850B Phi N SOT23 BC550B2Ft BC850B Phi N SOT23 BC550B2Ft BC850BW Phi N SOT323 BC550B2F-BC850BW Phi N SOT323 BC550B2F FMMT2907A Zet N SOT232N2907A2F MMBT2907A Mot N SOT23MPS2907A2F MMBT2907AW Mot N SOT323MPS2907Ap2F PMBT2907A Phi N SOT232N2907Ap2F PXT2907A Phi O SOT892N2907At2F PMBT2907A Phi N SOT232N2907At2F PMBT2907A Phi N SOT3232N2907A2FR BC850BR Phi R SOT23R BC550B2G BC850C ITT N SOT23 BC550C2Gs BC850C Sie N SOT23 BC550C2Gp BC850C Phi N SOT23 BC550C2Gt BC850C Phi N SOT323 BC550C2Gt BC850CW Phi N SOT323 BC550C2G-BC850CW Phi N SOT323BC550C2G FMMT-A56Zet N SOT23MPSA562G MMBTA56Mot N SOT23MPSA56t2G PMBTA56Phi N SOT23MPSA56t2G PMSTA56Phi N SOT323MPSA562GM MMBTA56Mot N SOT23MPSA562GR BC850CR Phi R SOT23R BC550C2GT SOA56SGS N SOT23MPSA562H ABA-52563Agi DU SOT363 3.5 GHz Broadband Amplifier2H FMMT-A55Zet N SOT23MPSA552H MMBTA55Mot N SOT23MPSA552HT SOA55SGS N SOT23MPSA55t2H PMBTA55Phi N SOT23MPSA55t2H PMSTA55Phi N SOT323MPSA552J MMBT3640Mot N SOT23MPS3640 pnp sw2K BAT754Phi C SOT23Schottky barrier diode2K FMMT4402Zet N SOT232N44022K MMBT8598Mot N -2N4125 pnp 60V2L BAT754A Phi J SOT23Schottky barrier double diodes 2L MMBT5401Mot N SOT232N5401 pnp 150V2L FMMT4403Zet N SOT232N4403p2L PMBT5401Phi N SOT232N5401 pnp 150Vt2L PMBT5401Phi N SOT232N5401 pnp 150Vt2L PMST5401Phi N SOT3232N5401 pnp 150V2M BAT754C Phi B SOT23Schottky barrier double diodes 2M FMMT5087Zet N SOT232N50872M MMBT404Mot N SOT23pnp-chopper 24V 150mA2N BAT754S Phi D SOT23Schottky barrier double diodes 2N MMBT404A Mot N SOT23pnp-chopper 35V 150mA 2N0ZXT11N20DF Zet N SOT23npn 20V 2.5A low sat switch2P FMMT2222R Zet R SOT23R2N22222P MMBT5086Mot N SOT232N50862Q MMBT5087Mot N SOT232N50872R HSMS-8102HP Z SOT2310-14GHz schottky mixer pair2T SO4403SGS N SOT232N44032T MMBT4403Mot N SOT232N4403p2T PMBT4403Phi N SOT232N4403p2T PXT4403Phi O SOT892N4403t2T PMBT4403Phi N SOT232N4403t2T PMST4403Phi N SOT3232N44032T HT2Zet N SOT23pnp 80V 100mA2U MMBTA63Mot N SOT23MPSA63 darlingtont2U PMBTA63Phi N SOT23MPSA63 darlington2V MMBTA64Mot N SOT23MPSA64 darlingtonp2V PXTA64Phi O SOT89MPSA64 darlingtont2V PMBTA64Phi H SOT23MPSA64 darlington2V4PZM2.4NB Phi C SOT346 2.4V 300mW Zener2V7PZM2.7NB Phi C SOT346 2.7V 300mW Zener2W FMMT3905Zet N SOT232N39052W MMBT8599Mot N -2N4125 Vce 80V pnp2X SO4401SGS N SOT232N44012X MMBT4401Mot N SOT232N4401p2X PMBT4401Phi N SOT232N4401p2X PxT4401Phi O SOT892N4401t2X PMBT4401Phi N SOT232N4401t2X PMST4401Phi N SOT3232N44012Y4BZV49-C2V4Phi O SOT89 2.4V 1W zener2Y7BZV49-C2V7Phi O SOT89 2.7V 1W zener2Z MMBT6520Mot N SOT232N6520 pnp Vce 350V2Z BAS70-04Zet D SOT23dual series RF schottky 70V 15mA 2Z5BAS70-05Zet B SOT23dual cc RF Schottky 70V 15mA Code Device Manufacturer Base Package Leaded Equivalent/Data3BAT60A Sie I SOD32310V 3A sw schottky3BAT62-02W Sie I SCD80-30MUN5330DW1Mot DP SOT363npn/pnp dtr 1k0+1k030U TK61030S Tok-SOT23-5Voltage detector30V PZM30NB1Phi C SOT34630V 300mW zener30Y BZV49-C30Phi O SOT8930V 1W zener301FDV301N Fch M SOT23n-ch 'digital' fet 25V 0.22A302FDV302P Fch M SOT23p-ch 'digital' fet 25V 0.13A303FDV303N Fch M SOT23n-ch 'digital' fet 25V 0.68A304FDV304P Fch M SOT23p-ch 'digital' fet 25V 0.46A31MUN5331DW1Mot DP SOT363npn/pnp dtr 2k2+2k231MMBD1402Nat K SOT23Si diode 200V 100mAp31PDTA143XT Phi N SOT23pnp dtr 4k7+10kt31PDTA143XT Phi N SOT23pnp dtr4k7+10k32MUN5332DW1Mot DP SOT363npn/pnp dtr 4k7+4k732MMBD1403Nat D SOT23dual Si diode 200V 100mA32BAT32Sie CS -18GHz zero-bias schottkyp32PDTC143XT Phi N SOT23pnp dtr 4k7+10kt32PDTC143XT Phi N SOT23pnp dtr 4k7+10ks33MUN5333DW1Mot DP SOT363npn/pnp dtr 4k7+47k33DTA143XE Roh N EMT3pnp dtr 4k7+10k 50V 100mA33DTA143XUA Roh N SC70pnp sw 4k7+10k bias res 50V 100mA 33DTA143XKA Roh N SC59pnp sw 4k7+10k bias res 50V 100mA 33MMBD1404Nat B SOT23dual cc Si diode 200V 100mA33Gali-33MC AZ SOT89DC-4GHz MMIC amp 19dB gain 33U TK61033S Tok-SOT23-5Voltage detector33V PZM33NB1Phi C SOT34633 300mW zener33Y BZV49-C33Phi O SOT8933V 1W zener34MUN5334DW1Mot DP SOT363npn/pnp dtr 22k+47k34MMBD1405Nat A SOT23dual ca Si diode 200V 100mA 331NDS331N Fch M SOT23n-ch mosfet 1.3A 20V331PZM3.3NB1Phi C SOT346 3.3V 300mW zener332PZM3.3NB2Phi C SOT346 3.3V 300mW zener332NDS332N Fch M SOT23p-ch mosfet 0.4A, 1A pk, 20V 335NDS335N Fch M SOT23n-ch mosfet 70 mA, 1.7A pk, 20V 336NDS336N Fch M SOT23p-ch mosfet 0.27A, 1.2A pk, 20V 337NDS337N Fch M SOT23n-ch mosfet 50 mA, 2.5A pk 20V 338NDS338N Fch M SOT23p-ch mosfet 0.13A, 1.6Apk 20V 342SC5007Nec N -npn RF fT 7GHz @3V 7mA340FDV340P Fch M SOT23p-ch mosfet 20V 70 mA35MUN5335DW1Mot DP SOT363npn/pnp dtr 2k2+47k35DTA124XE Roh N EMT3pnp dtr 22k+47k 50V 50mA35DTA124XUA Roh N SC70pnp dtr 22k+47k 50V 50mA35DTA124XKA Roh N SC59pnp dtr 22k+47k 50V 50mA351NDS351N Fch M SOT23n-ch mosfet 1.1A 30V352NDS352N Fch M SOT23p-ch mosfet 0.5A 20V355NDS355N Fch M SOT23n-ch mosfet 0.1A, 1.6A pk 30V 356NDS356N Fch M SOT23p-ch mosfet 0.3A, 1.1A pk 20V 357NDS357N Fch M SOT23n-ch mosfet 2.5Apk 30V358NDS358N Fch M SOT23p-ch mosfet 0.2A, 1.6A pk 30V 358FDN358N Fch M SOT23p-ch mosfet 0.2A 1.6A pk 30V 360FDN360P Fch M SOT23p-ch mosfet 80mA, 2a PK, 30V 361PZM3.6NB1Phi C SOT346 3.6V 300mW Zener362PZM3.3NB2Phi C SOT346 3.6V 300mW Zener36U TK61036S Tok-SOT23-5Voltage detector36V PZM36NB1Phi C SOT34636V 300mW Zener36Y BZV49-C36Phi O SOT8936V 1W zener391PZM3.9NB1Phi C SOT346 3.9V 300mW Zener392PZM3.9NB2Phi C SOT346 3.9V 300mW Zener39V PZM39NB1Phi C SOT34639V 300mW Zener39Y BZV49-C39Phi O SOT8939V 1W zener3A BC856A ITT N SOT23BC556A3A BC856AT Phi N SOT416BC556A3Ap BC856A Phi N SOT23BC556A3At BC856A Phi N SOT23BC556A3As BC856A Sie N SOT23BC556A3At BC856AW Phi N SOT323BC556A3A-BC856AW Phi N SOT323BC556A3A MMBTH24Mot N SOT23VHF mixer npn fT 600MHz 3A0PZM3.0NB2A Phi C SOT346dual 3.0V Zener 3A3PZM3.3NB2A Phi C SOT346dual 3.3V Zener3A6PZM3.6NB2A Phi C SOT346dual 3.6V Zener3A9PZM3.9NB2A Phi C SOT346dual 3.9V Zener3AR BC856AR Phi R SOT23R BC556A3B BC856B ITT N SOT23BC556B3B BC856BT Phi N SOT416BC556B3Bp BC856B Phi N SOT23BC556B3Bs BC856B Sie N SOT23BC556B3Bt BC856B Phi N SOT23BC556B3Bt BC856BW Phi N SOT323BC556B3B-BC856BW Phi N SOT323BC556B3B FMMT918Zet N SOT232N9183B MMBT918Mot N SOT232N9183BR BC856BR Phi R SOT23BC556B3C FMMTA20R Zet R SOT23R MPSA203C BC857Sie DO -pnp separate pair gp AF 3D BC856Phi N SOT23BC556 hfe 75 min3Dp BC856Phi N SOT23BC556 hfe 75 min3Dt BC856Phi N SOT23BC556 hfe 75 min3Dt BC856W Phi N SOT323BC556 hfe 75 min3D-BC856W Phi N SOT323BC556 hfe 75 min3D MMBTH81L Mot N SOT23UHF pnp fT 600MHz3D BC856S Sie DO -pnp separate pair gp AF 3E BC857A Phi N SOT23BC557A3E BC857AT Phi N SOT416BC557A3Ep BC857A Phi N SOT23BC557A3Et BC857A Phi N SOT23BC557A3Et BC857A Phi N SOT323BC557A3E-BC857A Phi N SOT323BC557A3E MMBTH10Mot N SOT23MPSH10 fT 650MHz3E FMMT-A42Zet N SOT23MPSA423EM MMBTH10L Mot N SOT23VHF amp 650MHz fT3ER BC857AR Phi R SOT23R BC557A3EZ FMMTH10Zet N SOT23npn fT 650MHz3F BC857B Phi N SOT23BC557B3F BC857BT Phi N SOT416BC557B3Fp BC857B Phi N SOT23BC557B3Fs BC857B Sie N SOT23BC557B3Ft BC857B Phi N SOT23BC557B3Ft BC857BW Phi N SOT323BC557B3Ft BC857BS Phi N SOT363BC557B3F-BC857BW Phi N SOT323BC557B3FR BC857BR Phi R SOT23R BC557B3G BC857C Phi N SOT23BC557C3Gp BC857C Phi N SOT23BC557C3G BC857C Phi N SOT23BC557C3Gs BC857C Sie N SOT23BC557C3Gt BC857C Phi N SOT23BC557C3Gt BC857CW Phi N SOT323BC557C3G-BC857CW Phi N SOT323BC557C3G MMBTH11NS N SOT23-3G MGSF3454X Mot DK TSOP6n-ch enh tmosfet 1.75A 3GR BC857CR Phi R SOT23R BC557CR 3Hp BC857C Phi N SOT23BC5573Ht BC857C Phi N SOT23BC5573Ht BC857CW Phi N SOT323BC5573H MMBTH30NS N SOT23-3H-BC857CW Phi N SOT323BC5573J MMBTH69Mot N SOT23pnp UHF fT 2GHz3J BC858A Phi N SOT23BC558A3Js BC858A Sie N SOT23BC558A3JR BC858AR Phi R SOT23R BC558A3Js BCV62A Sie VQ SOT143pnp current mirror hFe 1803Jp BCV62A Phi VQ SOT143pnp current mirror hFe 180 3K BC858B Phi N SOT23BC558B。

电脑的认识品牌机介绍

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惠普公司简介
HP来源于惠普两位创始人的姓氏 1939年，在美国加州帕洛阿尔托市(Palo Alto)爱迪生大街367
号的一间狭窄车库里，两位年轻的发明家比尔.休利特（Bill Hewle tt）和戴维.帕卡德（David Packard），以手边仅有的538美元，怀着对未来技术发展的美好憧憬和发明创造的激情创建了HP公司，开始了硅谷的创新之路。
电脑的认识品牌机介绍
2023年12月28日星期四
品牌机介绍
品牌系列 ▪ 联想台式机系列 ▪ 联想一体机系列 ▪ 惠普台式机系列 ▪ 惠普一体机系列
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联想台式机系列联想扬天 A4600R ￥3650
基本参数型号扬天 A4600R 类型商用台式机处理器 Intel Pentium E5200 2.5G 处理器类型奔腾E双核处理器频率 2500MHz 二级缓存(KB) 2048KB 主板/芯片组 Intel G41 总线频率 800MHz 内存类型 DDR2 内存大小 2GB 内存容量 2048 硬盘类型 SATA硬盘硬盘参数 7200转硬盘容量 250GB 光驱 DVD光驱显示器宽屏液晶尺寸 17寸显卡集成显卡
1940年公司从车库迁址至 Palo Alto市位于Page Mill路和EI Camino Real的一座租赁大楼内。公司向员工发放第一笔奖金－－一笔5美元的圣诞奖金。其后，它成为一种生
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惠普公司简介
产奖金，再后来，它又变成公司内部的利润分配计划。营业纯收入：34,000美元；员工人数： 3人，产品种类： 8种。

怎么样通过cpu上面的字母能知道这AMDCPU的主频电压型号是什么

怎么样通过cpu上面的字母能知道这AMDCPU的主频电压型号是什么①系列编号的头三个字母表示CPU的类型。

SDA代表CPU是低端的Sempron系列，ADA代表高端的Athlon 64系列，ADA(X2) 代表更高端的双核Athlon 64 X2。

②在编号的头三个字母后面有四位数字，表示C P U的速度档次。

如2600，就代表是2600+ CPU。

③四位数字后面的字母表示C P U的针脚规格。

A代表早期的Socket 754普通封装，即没有外壳的那种CPU。

B代表金属外壳封装的Socket 754 CPU。

C代表针脚为Socket 940、封装是金属外壳的CPU。

D代表针脚为Socket 939、封装为金属外壳的 CPU，一般是Athlon 64。

EC代表Socket 940、金属外壳封装的 CPU。

④在表示C P U规格和封装的英文字母之后还有一个英文字母，表示C P U的核心工作电压。

A代表1.35-1.40V，C代表1.55V，E代表1.50V，I代表1.40V，K 代表1.35V，M代表1.30V，O代表1.25V，Q代表1.20V，S代表1.15V。

对于同样频率和规格的C P U来说，电压越低，表示发热和能耗越低。

⑤接下去的一位字母表示C P U的最高温度承受能力，即温度上限。

A代表不确定，I代表63度，K代表65度，M代表67度， O代表69度，P代表70度，X代表95度，Y代表100度。

如果CPU的温度超过了这个数值，很快就会被烧毁。

⑥后面的一位数字表示C P U的二级缓存。

2代表二级缓存为128KB，3代表二级缓存为256KB，4代表二级缓存为512KB，。

如何识别主板型号

如何识别主板型号由于目前的主板规格品种繁多，厂商更始雨后春笋。

技术参数也差异很大，编号当然也会随着升级，越来越复杂。

下面是店铺收集整理的如何识别主板型号，希望对大家有帮助~~识别主板型号微星(MSI)微星主板编号主要分为“型号名”和“产品名”两种形式来命名。

前期采用的“数字名”就是用“MS-”+“XXXX”+“PCBXX”方式来表达主板型号，比如“MS-6309 2.0”和“MS-6199 1.0”。

在这种命名方式中，数字编号是厂商研发部门命名的而且没有其他的含义，PCB版本号也无规律，编号特点不明显，一般用户很难知道该主板型号的特点。

为了方便用户记忆和了解产品型号，微星后期采用了“型号名”的命名方式。

它的识别方式为“芯片组名”+“架构类型(M/D)”+“主板定位(Pro/Turbo/Master)”+“附加功能(S/L/A/I/R)”的方式表达。

芯片组的后缀“D”则代表该主板支持双CPU ，“M”表示Micro ATX主板架构。

“Pro”表示一般的主板产品，“Turbo”是功能加强型主板，而“Master”则指高端主板(如网络服务器或图形工作站使用主板)。

Master主板通常具有SCSI功能(特殊主板产品例外)。

在附加功能中，“S”表示主板自带SCSI接口，“L”表示主板集成了网络适配器，“A”表示主板集成其他厂商的声卡或支持ATA 100规格，“I”表示主板有IEEE 1394火线接口，“R”表示主板支持RAID功能。

例如：主板编号为K7T Turbo-R,从编号就可以看出该主板使用VIA KT133A芯片组并且增加了对RAID功能的支持。

另外微星也有一些特殊的命名方式，用于特殊规格产品。

如早期的“6309”这个系列的产品，“6309NL”表示无D-LED灯。

而“6309NL100”则通过增加“100”这个后缀表达该主板支持ATA 100规范，同时也避免了使用“A”后缀与带硬声卡的6309A相混淆。

压铆螺钉代码

深圳富特思邦是一家专业的FHS-M6-12压铆螺钉厂家。

提供以下压铆螺钉产品：1、圆头压铆螺钉FH FHSFH-M2-6 FH-M2-8 FH-M2-10 FH-M2.5-6 FH-M2.5-8 FH-M2.5-10 FH-M2.5-12 FHS-M2-6 FHS-M2-8 FHS-M2-10 FHS-M2-12 FHS-M2-15 FHS-M2-182、六角头压铆螺钉NFH NFHSNFH-M2-6 NFH-M2-8 NFH-M2-10 NFH-M2-12 NFH-M2-15 NFH-M2-18NFHS-440-4 NFHS-440-5 NFHS-440-6 NFHS-440-8 NFHS-440-10 NFHS-440-12 3、圆头压铆螺钉TFH TFHSTFH-M2-6 TFH-M2-8 TFH-M2-10 TFH-M2-12 TFH-M2-15 TFH-M2-18TFHS-M2-6 TFHS-M2-8 TFHS-M2-10 TFHS-M2-12 TFHS-M2-15 TFHS-M2-18 TFHS-M3-6 TFHS-M3-8 TFHS-M3-10 TFHS-M3-12 TFHS-M3-15TFH-632-4 TFH-632-5 TFH-632-6 TFH-632-8 TFH-632-10 TFH-632-12 TFHS-63 2-4 TFHS-632-5 TFHS-632-6 TFHS-632-8 TFHS-632-10 TFHS-632-124、高强度压铆螺钉HFH HFHS HFHBHFH-M5-15 HFH-M5-20 HFH-M5-25 HFH-M5-30 HFH-M5-35HFHS-M5-15 HFHS-M5-20 HFHS-M5-25 HFHS-M5-30 HFHS-M5-35HFHB-M5-15 HFHB-M5-20 HFHB-M5-25 HFHB-M5-30 HFHB-M5-35HFH-032-8 HFH-032-12 HFH-032-16 HFH-032-20 HFH-032-24HFHS-032-8 HFHS-032-12 HFHS-032-16 HFHS-032-20 HFHS-032-24HFHB-032-8 HFHB-032-12 HFHB-032-16 HFHB-032-20 HFHB-032-245、不锈铁压铆螺钉FH4FH4-M5-6 FH4-M5-8 FH4-M5-10 FH4-M5-12 FH4-M5-15 FH4-M5-18 FH4-M5-20 FH4-116-4 FH4-116-5 FH4-116-6 FH4-116-8 FH4-116-10 FH4-116-12FH4-632-4 FH4-632-5 FH4-632-6 FH4-632-8 FH4-632-10 FH4-632-126、挤压螺钉KFHKFH-M3-6 KFH-M3-8 KFH-M3-10 KFH-M3-12 KFH-M3-15KFH-440-4 KFH-440-5 KFH-440-6 KFH-440-8 KFH-440-10 KFH-440-127、埋头压铆螺钉CHA CHC CFHA CFHCCHC-M5-4 CHC-M5-6 CHC-M5-8 CHC-M5-10 CHC-M5-12 CHC-M5-16CHC-M5-20CHA-M3-4 CHA-M3-6 CHA-M3-8 CHA-M3-10 CHA-M3-12 CHA-M3-16CHA-M3-2 0CFHC-M5-4 CFHC-M5-6 CFHC-M5-8 CFHC-M5-10 CFHC-M5-12 CFHC-M5-16C FHC-M5-20CFHA-M5-4 CFHA-M5-6 CFHA-M5-8 CFHA-M5-10 CFHA-M5-12 CFHA-M5-16C FHA-M5-20CHC-032-6 CHC-032-8 CHC-032-10 CHC-032-12 CHC-032-14 CHC-032-16 CHA-116-4 CHA-116-6 CHA-116-8 CHA-116-10 CHA-116-12 CHA-116-14 CFHC-116-4 CFHC-116-6 CFHC-116-8 CFHC-116-10 CFHC-116-12 CFHC-116-14 CFHC-116-16 CFHC-116-20CFHC-440-4 CFHC-440-6 CFHC-440-8 CFHC-440-10 CFHC-440-12压铆螺母：碳钢的是用S来表示的，不锈钢的用CLS来表示，不锈铁的用SP 来表示。

Xeon处理器型号详解

英特尔至强处理器型号大全第1页：双核至强UP：3000、3100系列3000系列“Conroe”2006年9月末英特尔发布了代号为“Conroe”（产品代码80557）的双核至强3000系列CPU，它只不过是英特尔主流“Conroe”的重新贴牌产品，商标采用了酷睿2 Duo（用于消费级的桌面产品），和其它大多数至强处理器不同，它们只支持单CPU运算，使用Socket T (LGA775)，前端总线速度1066MHz，支持英特尔增强的自动降频和虚拟化技术，但不支持超线程。

3100系列“Wolfdale”代号为“Wolfdale”（产品代码80570）3100系列双核至强CPU只是对英特尔主流产品Wolfdale进行了重新包装，采用相同的65纳米制造工艺和6MB二级缓存，和大多数至强不同，它们仅支持单CPU运算，使用Socket T (LGA775)，前端总线1333MHz，支持增强的自动降频和虚拟化技术，但不支持超线程。

第2页：四核至强UP：3200、3300、3400和3500系列——英特尔的多核之路：四核、六核至强3200系列“Kentsfield”2007年1月7日，英特尔发布了重新包装过的四核（2x2）酷睿2 Quad处理器，即至强3200系列（产品代码80562），2x2四核心包括两个独立的双核芯片，包括三个型号X3210、X3220和X3230，分别运行在2.13GHz、2.4GHz 和2.66GHz。

和300系列类似，这些型号只支持单CPU运算，前端总线1066MHz，其目标定位于刀片服务器市场，X3220也当作Core2 Quad Q6600销售，X3230对应到Q6700。

3300系列“Yorkfield”英特尔发布重新包装的四核酷睿2 Quad Yorkfield Q9400和Q9x50处理器时，同期发布了至强3300系列（产品代码80569），它包含两个独立的双核芯片，采用了45纳米制造工艺，型号包括X3320、X3350、X3360和X3370，分别运行在2.50GHz、2.66GHz、2.83GHz和3.0GHz，每个芯片统一使用6MB二级缓存（但X3320每块芯片二级缓存只有3MB），前端总线1333MHz，所有型号都支持英特尔64位（x86-64实现），XD位和虚拟化技术，也支持按需供电，使用LAG775 Socket。