Q62702-F1519中文资料

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Q62702-F1062中文资料

2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 13.5 8 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 84 165 0.85 0.51 0.69 0.61 0 0.49 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300
fA mA Ω V fF V eV K
0.016123 A 0.019729 A
0.024709 fA
0.013277 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG

Q62702-F1590中文资料

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 96 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
Unit max. 6.5 600 100 150 V nA µA -
typ. 5 80
V(BR)CEO I CBO I EBO hFE
4.5 50
fT
15 24 17 0.48 1.33 1.75 1.25 0.75 1.6
GHz
Ccb Cce Ceb F
pF
dB
Gma
-
14
-
dB
|S21|2
8
11
Ga 1)
dB
Γopt
MAG ANG
RN
Ω
rn
-
F50Ω 2)
dB
|S21|2 2)
dB
V CE = 2V, I C = 10mA
0.9 1.8 2.4 3 4 0.9 1.25 1.45 1.7 2.1 15.5 11.8 10.9 8.5 6.6 0.29 0.47 0.56 0.62 0.66 175 -171 -159 -147 -127 2.7 3 3.5 5.5 15.5 0.054 0.06 0.07 0.11 0.31 0.98 1.74 2.23 3.05 4.49 16 9.5 6.8 4.7 1.9

Q62702-F1572资料

V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
RthJS
K/W
Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
fT
6 8 0.24 0.11 0.35 -
GHz pF 0.4 dB 1.45 1.8 -
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
4
Dec-16-1996
元器件交易网
BFS 481
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
Package SOT-363
data below is of a single transistor

bfp420

Type Marking Ordering Code (8-mm taped)Pin Configuration 1 2 3 4Package 1)BFP420AMsQ62702-F1591B E C E SOT343Maximum Ratings ParameterSymbol Unit Collector-emitter voltage V CEO 4.5V Collector-base voltage V CBO 15V Emitter-base voltage V EBO 1.5V Collector current I C 35mA Base currentI B 3mA Total power dissipation, Ts ≤ 107°C 2)3)P tot 160mW Junction temperature T j 150°C Ambient temperature range T A -65...+150°C °C Storage temperature range T stg-65...+150°C°CThermal Resistance Junction-soldering point 2)R th JS 270K/W1) For detailed information see chapter Package2) T S is measured on the emitter lead at the soldering point to the pcb.3) P tot due to Maximum Ratings.At typical Ts ≤ 80°C: P tot = 250 mW due to thermical characteristics.NPN Silicon RF TransistorFor High Gain Low Noise Amplifiers For Oscillators up to 10 GHzNoise Figure F = 1.05 dB at 1.8 GHz Outstanding G ms = 20 dB at 1.8 GHz Transition Frequency f T = 25 GHz Gold metalization for high reliabilitySIEGET ®25-Line Sie mens G rounded E mitter T ransistor- 25 GHz f T -LineESD : E lectro s tatic d ischarge sensitive device,observe handling precautions!Electrical Characteristicsat T A = 25 °C, unless otherwise specified.Parameter Symbol Value Unitmin.typ.max.DC CharacteristicsCollector-emitter breakdown voltageI C = 1 mAV(BR)CEO 4.55 6.5VCollector-cutoff currentV CB = 5 V, I E = 0I CBO--200nAEmitter base cuttoff currentV EB = 1.5 V, I C = 0I EBO--35µADC current gainI C = 20 mA, V CE = 4 Vh FE5080150AC CharacteristicsTransition frequencyI C = 30 mA, V CE = 3 V, f = 2 GHzf T2025-GHzCollector-base capacitanceV CB = 2 V, V BE = v be = 0, f = 1 MHzC cb-0.150.24pFCollector-emitter capacitanceV CE = 2 V, V BE = v be = 0, f = 1 MHzC ce-0.41-pFEmitter-base capacitanceV EB = 0.5 V, V CB = v cb = 0, f = 1 MHzC eb-0.55-pFNoise figureI C = 5 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z SoptF- 1.05 1.4dBPower gainI C = 20 mA, V CE = 2 V, f = 1.8 GHz,Z S =Z Sopt , Z L = Z LoptG ms1)-20-dBInsertion power gainI C = 20 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z L = 50Ω|S21|21417-dBThird order intercept point at outputI C = 20 mA, V CE = 2 V, f = 1.8 GHz,Z S = Z Sopt, Z L= Z LoptIP3-22-dBm1dB Compression pointI C = 20 mA, V CE = 2 V, f = 1.8 GHz,Z S = Z Sopt, Z L= Z LoptP-1dB-12-dBm1) G S Sms =2112Total Power DissipationPermissible Pulse Power Dissipation versus Soldering Point Temperatureversus On-Time (V CE0max = 4.5 V)15010050°CTs600500400300200100mWPtotPtot_maxPtot_DCtpTransition Frequency Collector-base Capacitance versus Collector Current versus Collector-base Voltage f = 2 GHzV BE = 0 V, f = 1MHz402010mA Ic30252015105GHzfT421V Vcb0.30.250.20.150.10.05pFCcbPower GainPower Gainversus Frequencyversus Collector Current V CE = 2 V , I C = 20 mAV CE = 2 V0.1110GHz f504030602010Gms |S21|²dB402010mA Ic30252015105Gma GmsdBPower Gainversus Collector Voltage I C = 20 mA321Vce4V 30252015105Gma GmsdBNoise FigureNoise Figureversus Collector Current versus Collector Current V CE = 2 V, Z S = Z SoptV CE = 2 V, f = 1.8 GHz402010mAIcF32.521.510.5dBIcF32.521.510.5dB402010mA Noise Figure v ersus Frequency Source Impedance f or min.V CE = 2 V, I C = 5 mA / 20 mA,Noise Figure versus Frequency Z S = Z SoptV CE = 2 V, I C = 5 mA / 20 mA0.110GHzf132.521dBF+j10-j50+j50Common Emitter S-ParametersƒS11S21S12S22GHz MAG ANG MAG ANG MAG ANG MAG ANGV CE = 2 V, I C = 20 mA0.010.452 -2.337.62178.30.0011 94.40.956 -0.60.10.447 -25.136.30164.70.0068 82.50.941 -12.40.50.386-101.123.41121.00.0262 61.70.632 -47.21.00.378-146.213.99 96.00.0395 57.80.395 -63.92.00.405 173.5 7.18 70.80.0664 54.00.222 -87.33.00.446 149.44.77 52.60.0949 47.10.133-111.34.00.501 130.0 3.52 36.80.1206 38.50.133-158.56.00.599 104.8 2.27 8.20.1646 18.90.196 142.08.00.700 78.5 1.51 -20.80.1800 -2.40.289 99.39.00.758 67.6 1.25 -34.40.1820 -13.00.379 84.110.00.800 62.0 1.04 -43.50.1800 -19.30.465 76.6V CE = 2 V, I C = 5 mA0.010.790 -1.015.14179.20.0012 83.40.988 -0.7 0.10.786 -11.614.98171.80.0092 84.10.982 -6.50.50.702 -55.712.86140.10.0398 62.80.857 -29.81.00.589 -99.1 9.63112.60.0603 46.50.647 -48.62.00.507-156.0 5.60 79.40.0798 34.60.401 -70.33.00.511 168.5 3.84 57.10.0957 29.80.267 -84.24.00.549 142.0 2.87 38.50.1121 25.10.207-110.55.00.604 123.9 2.26 22.10.1285 19.40.150-137.36.00.633 110.0 1.86 6.70.1442 13.10.173-169.8Common Emitter Noise ParametersƒF min1)G a 1)Γopt R N r n F50Ω 2)|S21| 2 2)GHz dB dB MAG ANGΩ-dB dBV CE = 2 V, I C = 5 mA0.90.9020.50.28 41.0 8.70.17 1.0220.31.8 1.0515.20.20 82.0 6.70.13 1.1115.82.4 1.2513.00.20 124.05.50.11 1.3213.53.0 1.3812.10.22-175.0 5.00.10 1.4811.64.0 1.5510.30.33-157.05.50.11 1.83 9.15.0 1.75 8.60.45-142.0 5.00.10 2.20 7.06.0 2.20 6.40.53-123.015.00.30 3.30 5.31) Input matched for minimum noise figure, output for maximum gain 2) Z S=Z L=50ΩFor more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet:http://www.siemens.de/Semiconductor/products/35/357.htmSPICE Parameters:Transistor Chip Data T502 (Berkeley-SPICE 2G.6 Syntax):IS =0.20045fA BF =72.534-NF = 1.2432-VAF =28.383V IKF =0.48731A ISE =19.049fA NE = 2.0518-BR =7.8287-NR = 1.3325-VAR =19.705V IKR =0.69141A ISC =0.019237fA NC = 1.1724-RB = 3.4849OHM IRB =0.72983mA RBM =8.5757OHM RE =0.31111OHM RC =0.10105OHM CJE = 1.8063fF VJE =0.8051V MJE =0.46576-TF = 6.7661ps XTF =0.42199-VTF =0.23794V ITF = 1.0mA PTF =0deg CJC =234.53fF VJC =0.81969V MJC =0.30232-XCJC =0.3-TR = 2.3249ns CJS =0fF VJS =0.75V MJS =0-XTB =0-EG = 1.11eV XTI =3.0-FC =0.73234-Tnom =300KC'-E'- Diode Data (Berkeley-SPICE 2G.6 Syntax):IS =3.5fAN =1.02-RS =10ΩAll parameters are ready to use, no scaling is necessary.The SOT343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,both leads are combined in one electrical connection.Extracted on behalf of SIEMENS Small Signal Semiconductors by:Institut für Mobil- und Satellitenfunktechnik (IMST)© 1996 SIEMENS AGFor more examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet:http://www.siemens.de/Semiconductor/products/35/357.htmFor non-linear simulation:•Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.•If you need simulation of the reverse characteristics, add the diode with the C'-E'-diode data between collector and emitter.•Simulation of the package is not necessary for frequencies < 100 MHz.For higher frequencies add the wiring of the package equivalent circuit around the non-linear transistor and diode model.Note:- This transistor is constructed in a common emitter configuration. This feature causes an additional,reverse biased diode between emitter and collector, which does not effect normal operation.Transistor Schematic DiagramThe common emitter configuration shows the following advantages:• Higher gain because of lower emitter inductance.• Power is dissipated via the grounded emitter leads, because the chip is mounted on the copperemitter leadframe.Please note, that the broadest lead is the emitter lead.- The AC-Characteristics are verified by random sampling.。

Q62702-A693中文资料

元器件交易网
Silicon Switching Diode Array
q q
BAV 74
For high-speed switching Common cathode
Type BAV 74
Marking JAs
Ordering Code (tape and reel) Q62702-A693
Semiconductor Group
2
元器件交易网
BAV 74
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 ˚C
Pin Configuration
Package1) Sper Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
µA
Values typ. max.
Unit
V
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω

Q62702-G44资料

Siemens Aktiengesellschaft
pg. 1/7
17.09.96 HL EH PD21/Gü
元器件交易网
GaAs MMIC
Electrical characteristics TA = 25°C f = 900 MHz Characteristics Power Gain Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Input return loss Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Output return loss Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Gain Control Range
C1 , C2 Siemens B37490-K5120-J62 R1 Siemens B54102-A1471-J60 L1 Coilcraft 0805CS-270XMBC C4 Siemens B37940-K5220-J62 R2 Siemens B53102-A1511-J60 L2 Coilcraft 0805CS-220XMBC C3 , C5 Siemens B37940-K5681-J62 For optimized device performance, Vg has to be adapted (Vg ≈ -1V...0V) to I ≈ 45mA at Vd-supply under condition Vcontrol=+2V.
dG P1dB
1dBm gain compression Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V

SFH214中文资料

Neu:Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New:Silicon PIN Photodiode with Very ShortSwitching TimeTyp Type Bestellnummer Ordering CodeSFH 214Q62702-P922SFH 214 FAQ62702-P1672SFH 214SFH 214 FAMaße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f e o f 6652f e o 06652Wesentliche Merkmaleq Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm(SFH 214) und bei 880 nm (SFH 214 FA)q Kurze Schaltzeit (typ. 5 ns)q 5 mm-Plastikbauform im LED-Gehäuse q Auch gegurtet lieferbarAnwendungenq Industrieelektronikq “Messen/Steuern/Regeln”q Schnelle Lichtschranken für Gleich- und Wechsellichtbetrieb q LWL Featuresq Especially suitable for applications from 400 nm to 1100 nm (SFH 214) and of 880 nm (SFH 214 FA)q Short switching time (typ. 5 ns)q 5 mm LED plastic package q Also available on tapeApplicationsq Industrial electronicsq For control and drive circuits q Photointerruptersq Fiber optic transmission systemsGrenzwerteMaximum Ratings Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T op ;T stg – 55...+ 100°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s)Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s)T S300°CSperrspannung Reverse voltage V R 50V VerlustleistungTotal power dissipationP tot100mWKennwerte (T A = 25°C)Characteristics Bezeichnung DescriptionSymbol SymbolWert ValueEinheit UnitSFH 214SFH 214 FAFotoempfindlichkeit Spectral sensitivityV R = 5 V, Normlicht/standard light A,T = 2856 K,V R = 5 V,λ = 870 nm,E e = 1 mW/cm 2S S45 (≥ 30)––25 (≥ 20)nA/Ix µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 850900nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S maxSpectral range of sensitivity S = 10 % of S maxλ400...1100750 (1100)nmBestrahlungsempfindliche Fläche Radiant sensitive areaA 11mm 2Abmessung der bestrahlungsempfindlichen FlächeDimensions of radiant sensitive area L ×B L ×W 1×11×1mm ×mmAbstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surfaceH3.4...4.0 3.4...4.0mmHalbwinkel Half angleϕ±40±40Grad deg.Dunkelstrom,V R = 20 V Dark currentI R 1 (≤ 5) 1 (≤ 5)nA Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivityS λ0.620.59A/W Quantenausbeute,λ = 850 nm Quantum yieldη0.890.86Electrons Photon Leerlaufspannung Open-circuit voltageE v = 1000 Ix, Normlicht/standard light A,T = 2856 KE e = 0.5 mW/cm 2,λ = 870 nmV O V O380 (≥ 300)––340 (≥ 290)mV mVKurzschlußstrom Short-circuit currentE v = 1000 Ix, Normlicht/standard light A,T = 2856 KE e = 0.5 mW/cm 2,λ = 870 nmI SC I SC 42––12µA µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 50Ω;V R = 20 V;λ = 850 nm;I p = 800µA t r ,t f55nsDurchlaßspannung,I F = 80 mA,E = 0Forward voltageV F 1.3 1.3V Kapazität,V R = 0 V,f = 1 MHz,E = 0CapacitanceC 01111pF Temperaturkoeffizient von V O Temperature coefficient of V O TC V – 2.6– 2.6mV/K Temperaturkoeffizient von I SC Temperature coefficient of I SC Normlicht/standard light A λ = 870 nmTC I0.18––0.2%/KRauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V,λ = 850 nmNEP2.9×10– 14 2.9×10– 14W √Hz Nachweisgrenze,V R = 20 V,λ = 850 nm Detection limitD*3.5×1012 3.5×1012cm ·√Hz WKennwerte (T A = 25°C)Characteristics (cont’d)Bezeichnung Description Symbol SymbolWert ValueEinheit UnitSFH 214SFH 214 FARelative spectral sensitivity SFH 214S rel =f (λ)Photocurrent I P =f (E e ),V R = 5 V Open-circuit voltage V O =f (E e )SFH 214 FARelative spectral sensitivity SFH 214 FA S rel =f (λ)Total power dissipation P tot =f (T A)Photocurrent I P =f (E v ),V R = 5 V Open-circuit voltage V O =f (E v )SFH 214Dark current I R =f (V R ),E= 0Directional characteristics S rel =f (ϕ)。

CMY213中文资料

ESD: Electrostatic discharge sensitive device, observe handling precautions!
CMY 213
7 65 8
34 12
VPW05982
Type CMY 213
Marking M6s
Ordering Code (tape and reel)
GC
8.0
FSSB
–
RFIrl/IFOrl –
9.5 –
8
–
10 –
3rd Order Input Intercept Point
IIP3
8
10 –
LO-RF Isolation
Iso
–
10 –
Unit
mA
dB dB dB
dBm dB
*Important Note: During production, the RF performance at PCS frequencies is screened. The passed devices also achieve the specified RF performance at cellular frequencies.
GND
EHT09227
Figure 2 Test Circuit
Data Sheet
5
2001-01-01
External Components for Cellular Frequencies
fRF = 850 MHz; fLO = 740 MHz; fIF = 110 MHz
Capacitors
cies for PLO = – 5 dBm (operation conditions: 3 V, 8 mA; fRF = 850 MHz; fLO = 740 MHz):

BPW34S

Photosensitive area 2.65 mm x 2.65 mm
BPW 34
1.4
1.8
Approx. weight 0.1 g
GEO06643
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
10 3
Ι R nA
OHF00082
10 2
10 1
10 0
1000 TA
Directional characteristics Srel = f (ϕ)
40
30
20
10
0
ϕ 1.0
50 0.8
60
0.6
OHF01402
70
0.4
80
0.2
0 90
100
1.0
Wesentliche Merkmale q Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher
0.8
0.6
0.4
0
20 40 60 80 100 120
Semiconductor Group
5
1998-08-27
Bezeichnung Description
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent

cmy 210中文资料

fLO
L3
C3
L4
C4
MHz
nH
pF
nH
pF
500
15
82
47
82
750
6.8
33
22
33
800
6.8
33
18
33
950
6.8
27
15
27
Data Book
4
03.00
CMY 210
Typical Lumped Element Values for Different LO-Frequencies (cont’d)
> 2.5 GHz • Wide LO-Level Range • Single ended Ports • RF- and IF-Port Impedance 50 Ω • Operating Voltage Range: < 3 to 6 V • Very low Current Consumption of typical 6 mA • All Gold Metallization
CMY 210
MW-6
ESD: Electrostatic discharge sensitive device Observe handling Precautions!
Type
Marking
CMY 210
M3
1) For detailed dimensions see Page 10.
Ordering Code (tape and reel)
Input Filter: Throughpass for the signal to be mixed; reflection of the mixed signal and the harmonics of both.

BF599中文资料

Semiconductor Group
2
BF 599
Total power dissipation Ptot = f (TA)
DC current gain hFE = f (IC) VCE = 10 V
Collector current IC = f (VBE) VCE = 10 V
Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10
Forward transfer admittance Iy21e I = f (IC)
Semiconductor Group
4
≤
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values 25 40 4 25 5 280 150 – 65 … + 150
Unit V
mA mW ˚C
450
ห้องสมุดไป่ตู้
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA

Q62702-K34中文资料

6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array Wesentliche Merkmaleq Speziell geeignet für Anwendungen imBereich von 400 nm bis 1100 nm (KOM 2100 B) und bei 880 nm (KOM 2100 BF)q Kurze Schaltzeit (typ. 13 ns)q Kathode = Chipunterseiteq Geeignet für Diodenbetrieb (mit Vorspannung) und Elementbetrieb qSMT-fähigAnwendungenq Universell, z.B. Drehwinkelgeber Featuresq Especially suitable for applications from400 nm to 1100 nm (KOM 2100 B) and of 880 nm (KOM 2100 BF)q Short switching time (typ. 13 ns)q Cathode = back contactq Available as photodiode with reverse voltage or photovoltaic cell qSuitable for SMTApplicationsq General-purpose, e.g. encoders KOM 2100 B KOM 2100 BFTyp Type Bestellnummer Ordering Code Gehäuse PackageKOM 2100 B Q62702-K35Platine mit SMT-Flanken, Abdeckrahmen mit klarem bzw. schwarzem Epoxyvergußpcb with SMT flanks, cover frame sealed with transparent or black epoxyKOM 2100 BFQ62702-K34Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f e o f 6529f e o 06529GrenzwerteMaximum Ratings Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T A ;T stg – 40...+ 80°C Sperrspannung Reverse voltageV R 20V Verlustleistung,T A = 25°C Total power dissipationP tot150mWKennwerte (T A = 25°C,λ = 950 nm) für jede Einzeldiode Characteristics (T A = 25°C,λ = 950 nm) per single diode Bezeichnung DescriptionSym-bolWert Value Einheit UnitKOM 2100 BKOM 2100 BF Fotoempfindlichkeit Spectral sensitivityV R = 5 V,E e = 0.5 mW/cm 2S9 (≥7)8.5 (≥6.6)µAWellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 870870nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von S maxSpectral range of sensitivity S = 10% of S maxλ400 (1100)730 (1100)nmBestrahlungsempfindliche Fläche Radiant sensitive areaA 2.5 2.5mm 2Abmessung derbestrahlungsempfinlichen Fläche Dimensions of radiant sensitive area L ×B L ×W 1×2.51×2.5mm x mmAbstand Chipoberfläche zu Vergu βober-flächeDistance chip front to case seal H0.4...0.60.4...0.6mmHalbwinkel Half angleϕ±60±60Grad deg.Dunkelstrom,V R = 10 V Dark currentI R 1 (≤10) 1 (≤10)nA Spektrale Fotoempfindlichkeit Spectral sensitivityS λ0.680.64A/WQuantenausbeute Quantum yieldη0.90.85Electrons Photon Maximale Abweichung derFotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity from the average ∆S±10±10%Kurzschlußstrom,E e = 0.5 mW/cm 2Short-circuit currentI SC 8.58µA Leerlaufspannung,E e = 0.5 mW/cm 2Open-circuit voltageV O 320 (≥250)320 (≥250)mV Anstiegszeit/Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = 50Ω,V R = 10 V;λ= 850 nm;I P = 800 µAt r ,t f1313nsDurchlaßspannung,I F = 100 mA;E = 0Forward voltageV F 1.2 1.2V Kapazität CapacitanceV R = 0 V ; f = 1 MHz;E = 0C 02525pFTemperaturkoeffizient von V O Temperature coefficient of V O TC V – 2.6– 2.6mV/K Temperaturkoeffizient von I P Temperature coefficient of I PTC I 0.180.18%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 VNEP2.6×10–142.8×10–14W √Hz Nachweisgrenze,V R = 10 V Detection limitD*6.1×1012 5.7×1012cm ·√Hz WKennwerte (T A = 25°C,λ = 950 nm) für jede Einzeldiode Characteristics (T A = 25°C,λ = 950 nm) per single diode Bezeichnung Description Sym-bol Wert Value Einheit UnitKOM 2100 B KOM 2100 BFRelative spectral sensitivity KOM 2100 B,S rel =f (λ)Total power dissipation P tot =f (T A)Relative spectral sensitivity KOM 2100 BF,S rel =f (λ)Dark current I R =f (V R ),E= 0Photocurrent,I P =f (E e );V R = 5 V,Open-circuit voltage V O =f (E e )Capacitance C =f (V R ),f = 1 MHz,E = 0Dark current I R =f (T A ),V R = 10 V , E= 0Directional characteristics S rel =f (ϕ)。

BAS70-中文资料

≤ 335 ≤ 435
1) For detailed information see chapter Package Outlines. 2) Max. 450 mW per package. 3) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
TS ≤ 66 ˚C2)
BAS 70-04 … TS ≤ 40 ˚C2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction - ambient3) BAS 70 BAS 70-04 …
元器件交易网
Silicon Schottky Diodes
q General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing
Differential forward resistance rf = f (IF) f= 10 kHz
Semiconductor Group
4
元器件交易网
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Available with CECC quality assessment
BAS 70 …
ESD: Electrostatic discharge sensitive device, observe handling precautions!

BPX65

Silizium-PIN-Fotodiode Silicon PIN Photodiode Wesentliche Merkmaleq Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm q BPX 65: Hohe Fotoempfindlichkeit q BPX 66: Sperrstromarm (typ. 150 pA)q Hermetisch dichte Metallbauform (TO-18),geeignet bis 125o C 1)Anwendungenq schneller optischer Empfänger mit gro βer Modulationsbandbreite Featuresq Especially suitable for applications from 350 nm to 1100 nmq BPX 65: high photosensitivityq BPX 66: low reverse current (typ. 150 pA)q Hermetically sealed metal package (TO-18),suitable up to 125o C 1)Applicationsq Fast optical sensor of high modulation bandwidth BPX 65BPX 661)Eine Abstimmung der Einsatzbedingungen mit dem Hersteller wird empfohlen bei T A> 85o C 1)For operating conditions of T A > 85o C please contact us.Typ Type Bestellnummer Ordering Code Gehäuse PackageBPX 65Q62702-P2718 A3 DIN 41870, planes Glasfenster, hermetisch dichtes Gehäuse, Lötspie βe im 2.54-mm-Raster (2/10”), Anodenkennzeichnung: Nase am Gehäuse-boden18 A3 DIN 41870, flat glass lens, hermetically sealed package, solder tabs 2.54 mm (2/10”) lead spacing, anode marking: projection at package bot-tomBPX 66Q62702-P80Ma βe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.Grenzwerte Maximum RatingsBezeichnung Description SymbolSymbolWertValueEinheitUnitBetriebs- und LagertemperaturOperating and storage temperature rangeT op;T stg–40...+80o CLöttemperatur (Lötstelle 2 mm vomGehäuse entfernt bei Lötzeit t≤ 3s)Soldering temperature in 2 mm distancefrom case bottom (t≤ 3s)T S230o CSperrspannungReverse voltageV R50VVerlustleistung,T A = 25o CTotal power dissipationP tot250mWKennwerte(T A = 25o C, Normlicht A,T = 2856 K)Characteristics(T A = 25o C, standard light A,T = 2856 K)Bezeichnung Description SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit,V R = 5 VSpectral sensitivityS10 (≥ 5.5)nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max850nmSpektraler Bereich der FotoempfindlichkeitS = 10% von S maxSpectral range of sensitivityS = 10% of S maxλ350...1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 1.00mm2Abmessung der bestrahlungsempfindlichen FlächeDimensions of radiant sensitive area L x BL x W1x1mmAbstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surfaceH 2.25...2.55mmHalbwinkel Half angle ϕ±40Graddeg.Dunkelstrom Dark currentBPX 65:V R = 20 V BPX 66:V R = 1 VI R 1 (≤ 5)0.15 (≤ 0.3)nA Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivityS λ0.55A/W Quantenausbeute,λ = 850 nm Quantum yieldη0.80Electrons Photon Leerlaufspannung,E v = 1000 Ix Open-circuit voltageV L 320 (≥ 270)mV Kurzschlu βstrom,E v = 1000 Ix Short-circuit currentI K 10µA Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 50Ω;V R = 5 V;λ = 850 nm;I p = 800µA t r ,t f12nsDurchla βspannung,I F = 100 mA,E = 0Forward voltageV F 1.3V Kapazität,V R = 0 V,f = 1 MHz,E = 0CapacitanceC 011pF Temperaturkoeffizient von V L Temperature coefficient of V L TC V –2.6mV/K Temperaturkoeffizient von I K Temperature coefficient of I KTC I 0.2%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 20 V,λ = 850 nmNEP3.3x 10–14W √Hz Nachweisgrenze,V R = 20 V,λ = 850 nm Detection limitD*3.1x 1012cm ·√Hz WKennwerte (T A = 25o C, Normlicht A,T = 2856 K)Characteristics (T A = 25o C, standard light A,T = 2856 K)Bezeichnung Description Symbol SymbolWert ValueEinheit UnitRelative spectral sensitivity S rel =f (λ)Dark current I R =f (V R ),E= 0Photocurrent I P =f (E v ),V R = 5 V Open-circuit-voltage V L =f (E v )CapacitanceC =f (V R ),f = 1 MHz,E= 0Total power dissipation P tot =f (T A )Dark currentI R =f (T A ), V R = 20 V,E= 0Directional characteristics S rel =f (ϕ)。

BSS81B中文资料

V(BR)EB0 6
–
Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C
ICB0
–
–
–
–
Emitter-base cutoff current VEB = 3 V
IEB0
–
–
DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1)
–
50
–
35
–
75
–
40
–
100 –
25
–
40
–
Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
VCEsat
–
–
–
–
Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
BSS 79 BSS 81
Type
BSS 79 B BSS 79 C BSS 81 B BSS 81 C
Marking
CEs CFs CDs CGs
Ordering Code (tape and reel)
Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605
Pin Configuration

Q62702-P5166中文资料

SFH 4301Schnelle IR-Lumineszenzdiode (950 nm) im 3 mm Radial-GehäuseHigh-Speed Infrared Emitter (950 nm) in 3 mm Radial Package 2000-01-011OPTO SEMICONDUCTORSWesentliche Merkmale•Hohe Pulsleistung und hoher Gesamt-strahlungsfluß Φe•Sehr kurze Schaltzeiten (10 ns)•Sehr hohe Langzeitstabilität •Hohe Zuverlässigkeit Anwendungen•Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia)•Analoge und digitale Hi-Fi Audio- und Videosignalübertragung•Batteriebetriebene Geräte (geringe Stromaufnahme)•Anwendungen mit hohenZuverlässigkeits-ansprüchen bzw. erhöhten Anforderungen•Alarm- und Sicherungssysteme •IR FreiraumübertragungTyp Type Bestellnummer Ordering Code Gehäuse PackageSFH 4301Q62702-P51663-mm-LED-Gehäuse (T1), schwarz eingefärbt, An-schlüsse im 2.54-mm-Raster (1/10’’), Kathodenkennung: längerer Anschluß3 mm LED package (T1), black-colored epoxy resin, solder tabs lead spacing 2.54 mm (1/10’’), cathode marking: long leadFeatures •High pulse power and high radiant flux Φe •Very short switching times (10 ns)•Very high long-time stability •High reliabilityApplications•High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia)•Analog and digital Hi-Fi audio and video signal transmission•Low power consumption (battery) equipment •Suitable for professional and high-reliability applications•Alarm and safety equipment •IR free air transmissionGrenzwerte(T A = 25 °C) Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … +100°CSperrspannung Reverse voltage VR3VDurchlaßstromForward currentI F (DC)100mAStoßstromSurge currentt p = 10 µs, D = 0IFSM1AVerlustleistungPower dissipationP tot180mWWärmewiderstand Sperrschicht - Umgebung,freie Beinchenlänge max. 10 mmThermal resistance junction - ambient,lead length between package bottom and PCBmax. 10 mmR thJA375K/W2000-01-012OPTO SEMICONDUCTORSKennwerte(T A = 25 °C) CharacteristicsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitWellenlänge der Strahlung Wavelength of peak emissionI F = 100 mA, t p = 20msλpeak950nmSpektrale Bandbreite bei 50% von I max Spectral bandwidth at 50% of I maxI F = 100 mA, t p = 20ms∆λ40nmAbstrahlwinkel Half angle ϕ± 10Graddeg.Aktive ChipflächeActive chip areaA0.09mm2Abmessungen der aktiven Chipfläche Dimension of the active chip area L×BL×W0.3×0.3mmSchaltzeiten, I e von 10% auf 90% undvon 90% auf 10%Switching times, I e from 10% to 90% andfrom 90% to10%,I F = 100 mA, t P = 20 ms, R L = 50 Ωt r, t f10nsKapazitätCapacitanceV R = 0 V, f = 1 MHzC o 35pFDurchlaβspannungForward voltageIF= 100 mA, t p = 20ms I F = 1 A, t p = 100 µs V FV F1.5 (≤ 1.8)3.2 (≤ 3.6)VVSperrstrom Reverse currentV R = 3 VIR0.01 (≤ 10)µAGesamtstrahlungsflußTotal radiant fluxI F = 100 mA, t p = 20msΦe32mWTemperaturkoeffizient von I e bzw. ΦeTemperature coefficient of I e or ΦeI F = 100 mATC I – 0.44%/K2000-01-013OPTO SEMICONDUCTORS2000-01-014OPTO SEMICONDUCTORSTemperaturkoeffizient von V F Temperature coefficient of V F I F = 100 mATC V– 1.5mV/KTemperaturkoeffizient von λTemperature coefficient of λI F = 100 mATC λ+ 0.2nm/KStrahlstärke Ιe in Achsrichtunggemessen bei einem Raumwinkel von Ω = 0.01 sr Radiant Intensity Ιe in Axial Direction measured at a solid angle of Ω = 0.01 sr Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit StrahlstärkeRadiant intensityI F = 100 mA, t p = 20ms I e min I e typ 1660mW/sr mW/sr StrahlstärkeRadiant intensity I F = 1 A, t p = 100 µsI e typ400mW/srLötbedingungenSoldering ConditionsTauch-, Schwall- und Schlepplötung Dip, wave and drag soldering Kolbenlötung (mit 1,5-mm-Kolbenspitze)Iron soldering (with 1.5-mm-bit)Lötpad-temperaturTemperature of the soldering bath Maximal zulässige LötzeitMax. perm. soldering time Abstand Lötstelle –GehäuseDistance betweensolder joint and case Temperatur des KolbensTemperature of the solder-ing iron Maximale zulässige Lötzeit Max. permis-sible solder-ing time Abstand Lötstelle – Gehäuse Distance between solder joint and case260 °C10 s≥ 1.5 mm 300 °C3s≥ 1.5 mmKennwerte (T A = 25 °C) (cont’d)Characteristics Bezeichnung ParameterSymbol Symbol Wert Value Einheit UnitRelative Spectral EmissionI= f(λ)Forward Current I F = f (V F)Radiant IntensityΙe/Ιe (100 mA) = f (I F)Ierel= f (ϕ)Max. Permissible Forward CurrentI F = f(T)2000-01-015OPTO SEMICONDUCTORSMaßzeichnungPackage OutlinesMaße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.2000-01-016OPTO SEMICONDUCTORS。

BF622中文资料

Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz
Semiconductor Group
3
元器件交易网
DC current gain hFE = f (IC) VCE = 20 V
Semiconductor Group
2
元器件交易网
BF 622
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Output capacitance Cobo = f (VCE) f = 1 MHz
1
5.91
元器件交易网
BF 622
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage IC = 1 mA IC = 10 µA, RBE = 2.7 kΩ Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 200 V VCB = 200 V, TA = 150 ˚C Collector cutoff current VCE = 200 V, RBE = 2.7 kΩ VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA

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元器件交易网
BF 771W
NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 771W RBs Q62702-F1519 1=B 2=E 3=C
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 ≤ 150 °C mA Unit V
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
BF 771W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values 1/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-11-1996
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 13.5 7.5 15.5 10 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
元器件交易网
BF 771W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 63 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
fT
6 8 0.74 0.28 1.8 -
GHz pF 0.1 dB 1.3 2.1 -
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
元器件交易网