亿光光电开关ITR20402技术规格书

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Rev 1
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ITR20402 █ Typical Electrical/Optical/Characteristics Curves for PT
900
1000 1100 1300
Fig.3 Relative Collector Current vs. Ambient Temperature
Fig.4 Collector Current vs. Irradiance
160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70
10
VCE=10V
14 12 10 8 6 4 2
10 10
10 10 0 25 50 75 100
0 0
1
2
3
4
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
http:\\ Prepared date：2006/06/05
1 Solder Heat
TEMP.：260℃±5℃
0/1 0/1
2 Temperature Cycle H : 100℃ L : -40℃ 3 Thermal Shock H :+100℃ L :-10℃ 4 High Temperature Storage 5 Low Temperature Storage
Max. 1.6 10 --100 0.4 --1 -----
Unit V μA nm nA V mA μA μsec μsec
Conditions IF=20mA VR=5V --VCE=10V IC=2mA ,Ee=1mW/cm2 VCE=5V, IF=10mA VCE=5V IF=10mA VCE=2V IC=1mA RL=1KΩ
Rev 1
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ITR20402 █ Typical Electrical/Optical/Characteristics Curves for IR
Fig.1 Forward Current vs. Ambient Temperature Fig.2 Spectral Distribution
Rev 1
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ITR20402 Label Form Specification
CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number
Fig.1Collector Power Dissipation vs. Ambient Temperature Fig.2 Spectral Sensitivity
100 80 60 40 20 0
1.0 Ta=25 C 0.8 0.6 0.4 0.2 0
-25
0
25
50
75 85 100
700
800
100 80 60 40 20 0
100 80 60 40 20 0
IF=20mA Ta=25° C
-20
0
25
50
75 85 100
Fig.3
Peak Emission Wavelength vs . Ambient Temperature
Fig.4
Forward Current vs. Forward Voltage
1.3
Relative radiant flux (%)
20 10 5 2 1 0.5 0.2 0.1
IF = const
1.2
IF=20mA
1.1
1
25 50 75 100 120
0
-25
25
50
75 100
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
2 1 3 4
1:Anode 2:Cathode 3:Collector 4:Emillter
A-A' SECTION
Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mm
█Absolute Maximum Ratings (Ta=25℃)
Parameter Power Dissipation at(or below) 25℃ Free Air Temperature Input Reverse Voltage Forward Current Peak Forward Current (*1) Pulse width ≦100μs, Duty cycle=1% Collector Power Dissipation Output Collector Current Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Storage Temperature Lead Soldering Temperature (*2) (＊1) tw=100 μsec. , T=10 msec.
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
Symbol Pd VR IF IFP PC IC B VCEO B VECO Topr Tstg Tsol t=5 Sec
Rev 1
Ratings 75 5 50 1 75 20 30 5 -25~+85 -40~+85 260
15mins 300Cycles 5mins 15mins 5mins 300Cycles 10secs 5mins 1000hrs 1000hrs 1000hrs 1000hrs
TEMP.：+100℃ TEMP.：-40℃
22pcs 22pcs 22pcs 22pcs
0/1 0/1 0/1 0/1
█ Descriptions
The ITR20402 consists of an infrared emitting Diode and a silicon phototransistor encased in a black Thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IRED only, and avoids the noise from ambient light
2
20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 C
2
5
2
10 20
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
http:\\ Prepared date：2006/06/05
6 DC Operating Life IF=20mA 7 High Temperature/ 85℃ / 85% R.H High Humidity
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
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1.2 --940 1
---
----15 15
Transfer Characteristics
ICEOD
tr tf
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
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Unit mW V mA A mW mA V V ℃ ℃ ℃
(＊2)
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ITR20402 Electro-Optical Characteristics (Ta=25℃)
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
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Rev 1
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ITR20402 Package Dimensions
Technical Data Sheet OPTO INTERRUPTER ITR
ITR20402 █ Features
․Fast response time ․High sensitivity ․Cut-off visible wavelength λp=940nm ․Thin ․Small package ․Pb free ․This product itself will remain within RoHS compliant version
980 960
10
4
10
940 920 900 -25
3
10
2
0
25
50
75
100
1 10 0 1 2 3 4
Everlight Electronics Co., Ltd. Device No：CDRX-204-004
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Rev 1
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ITR20402
. Fig.8 Forward Voltage vs.
Ambient Temperature(°C)
Fig.6 Relative Radiant Flux vs. Ambient Temperature(°C)
Rev 1
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ITR20402 Reliability Test Item And Condition
The reliability of products shall be satisfied with items listed below. Confidence level：90% LTPD：10% NO. Item Test Conditions Test Hours/ Sample Cycles Sizes 10secs 22pcs 22pcs IC(on)≦L×0.8 L :the initial test 22pcs value 0/1 Failure Judgement Criteria Ac/Re
Parameter Forward Voltage Input Reverse Current Peak Wavelength Dark Current Output C-E Saturation Voltage Collector Current Leakage Current Rise time Fall time Symbol VF IR λP ICEO VCE(sat) IC(ON) Min. ----------0.3 ------Typ.
█ Applications
․Camera ․Copier ․Scanner ․Non-contact Switching ․For Direct PC Board
█ Device Selection Guide
Device No. IR1918C PT1918B Chip Material GaAlAs Silicon
Rev 1
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ITR20402 Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs. Ambient Temperature Fig.6 Collector Current vs. Collector-Emitter Voltage