Low power storage for hierarchical graphs
NEC 迪斯
All other trademarks are the property of their respective owners.The images in this brochure are samples.This brochure uses recycled paper.Cat.No. WLPJ-1009-301NN Portable ProjectorNP-M350X / NP-M300X / NP-M260X /NP-M230X / NP-M300W / NP-M260W NP-M350X/NP-M300X/NP-M260X/NP-M230X/NP-M300W/NP-M260WEnvironmentally friendlyGreater ease-of-useReduced total cost ofownershipReplacement lampNP15LP(for NP-M300X/NP-M260X/NP-M230X/NP-M260W)NP16LP(for NP-M350X/NP-M300W)NP02LM1NP02LM2NP02LM3Wireless LAN unitThrow Distance andImage SizeRemoteControlCabinet DimensionsSoft Case(basic accessory)OptionsNP-M300W / NP-M260W(Aspect Ratio 16:10)NP-M350X / NP-M300X / NP-M260X / NP-M230X(Aspect Ratio 4:3)*1 : Effective pixels are more than 99.99%. *2 : Lamp life is defined as the average time span for the brightness of the lamp to be reduced by half, it dose not refer to the warranty period for the lamp.*3 : This is the light output value (ANSI lumens) when the [PRESET] mode is set to [HIGH-BRIGHT]. If any other mode is selected as the [PRESET] mode, the light output value may drop slightly. *4 : Compliance with ISO21118-2005All specifications are subject to change without notice./ap/Other functionsDesigned for a quiet noise level of 27 dB (in Eco Mode) to prevent annoying operation noises during projection. (NP-M300X, NP-M260X, NP-M230X and NP-M260W)Quick Cooling and Direct Power On allow speedy cleanup and transfer after useAuto Power On automatically switches on the power when the power cord is connected or a signal is inputVirtual Remote lets you use your computer to switch the power of the projector on and off and change the input signal Wall Colour Correction for vivid images even without a screen.Auto Vertical Keystone CorrectionBuilt-in monaural speaker with a powerful 10W output Front ventilation for effective heat dissipationThe Carbon Meter lets you check the amount of CO 2 you reduced by using Eco ModeIncludes a remote with the control ID registration function, which allows operation of multiple projectors with a single remote.Newly designed from the user’s perspectiveThe sliding lens cover temporarily stops video and audio when it is closed. In addition, the design has been completely updated to improve settings and operation. For example, the names of connectors are displayed on the top of the unit to make it easier to find their position on the back and the operation buttons have been made larger so they are easier to press. The power light is an easy-to-see blue LED so you can determine the power status in a glance.A complete lineup of eco functionsThe projector has an Auto Eco Mode, which automatically adjusts the brightness to suit the projected image, and Eco2 Mode*, which is convenient when it’s too bright during small screen projection. There are Eco buttons on the projector and remote control so you can more easily enable Eco Mode.Greatly improved lamp lifetimeThe time between lamp exchanges has been improved significantly. For normal use and Eco Mode, the times are 5,000 and 6,000 hours, respectively.* The low power design cuts energy consumption in standby (called “Power-saving Mode” in reference Excel sheet) to 0.2 W (100-130 V AC)/0.4 W (200-240 V AC), which helps with TCO reduction.Large filter enhances protection against dustThe large double-layer filter improves protection against dust. If youexchange the filter when you exchange the lamp, there is no need for regular cleaning.*For the NP-M300X, NP-M260X, NP-M230X and NP-M260W. For the NP-M350X and NP-M300W, the times for normal and Eco Mode are 4,000 and 5,000 hours, respectively.*Eco2 Mode : NP-M300X / NP-N260X only.“No signal guidance” for easy cable connectionsInterfaces for various functions1.7x zoomThe projector has a 1.7x zoom to cover a wide projection distance, so you can setup in various locations.The projector is equipped with an H DMI connector for projecting digital images in high quality, as well as a wired/wireless (option) LAN port. Model name of the optional wireless LAN unit* varies depending on the country where the unit is used (or to be used). You can connect the projector to a computer using a standard USB cable and project the computer screen from the projector without needing computer cables. The remote control of the projector can perform computer mouse operations so you don’t have to switch between mouse and remote for different operations. The projector also has a viewer function that lets you project data (JPEG) stored on USB memory, so you can give presentations without a computer.When the power of a device connectedto the projector is switched on, the input signal is automatically detected and projected. What’s more, when there is no signal being input, the “no signalguidance” lets you know in a glance where the cable should be inserted, so your setup runs smoothly.*NP02LM1 : United States, Canada, Mexico, Taiwan, Brazil, ColombiaNP02LM2 : Europe, United Arab Emirates, Saudi Arabia, Oman, South Africa, Turkey, Ukraine, Egypt, Israel, Australia, New Zealand, Japan, Thailand, China, Hong Kong, Singapore, South Korea, Malaysia, Sri Lanka, Pakistan, Vietnam, India, Indonesia, Philippines, Peru, Chile, Argentina, EcuadorNP02LM3 : RussiaUSB Port (Type A)USB Port (Type B)LAN PortHDMI INComputer 2 IN /Audio INComputer 1 IN /Audio INVideo INS-Video / Video Audio INS-Video IN Monitor OUTAudio OUTPC ControlTerminalspower offpower onNP-M350X/NP-M300X/NP-M260X/NP-M230X/NP-M300W/NP-M260W。
IRF5305中文资料
IRF5305HEXFET ® Power MOSFETPD - 91385BFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, VGS @ -10V -31ID @ T C = 100°C Continuous Drain Current, V GS @ -10V -22A I DMPulsed Drain Current -110P D @T C = 25°C Power Dissipation 110W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 280mJ I AR Avalanche Current-16A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.4R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/WR θJAJunction-to-Ambient–––62Thermal Resistancel Advanced Process Technology l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switching l P-ChannellFully Avalanche RatedDescription3/3/00IRF5305IRF5305IRF5305IRF5305IRF5305IRF5305IRF5305。
Silicon Laboratories 微控制器低功耗选择指南说明书
How to Pick the Right Microcontroller Based on Low-PowerSpecificationsIntroductionChoosing the right ultra-low-power microcontroller (MCU) for your next embedded design can be a confusing task when you compare claimed current consumption specifications in a myriad of data sheets provided by MCU vendors. In many cases, developers initially scan the first page of a data sheet as a reference point to gain basic information about an MCU, including peripherals, operating speed, package information, number of GPIOs and power characteristics. This approach works well to assess an MCU’s overall functionality, but it is not particularly useful when trying to gauge low-power characteristics.To get a broader view of an M CU’s true low-power operation, developers must take into consideration current consumption, state retention, wake-up time, wake-up sources and peripherals that are capable of operating while in low-power mode. Developers must compare a common operating mode to gain a balanced, apples-to-apples comparison among competing low-power MCUs. It is also important to take into consideration any additional functionality or peripherals that can reduce total system power and available evaluation tools that can make an engineer’s job easier.Microcontroller vendors will usually list the lowest power achievable on the first page of the data sheet. Although the device may be capable of achieving the specification in the data sheet, the actual operating mode may not be practical and useful in a real-world application. Some of the non-advertised features of the lowest power mode may include a very slow wake time, no state or RAM retention, or a reduced operating voltage range.To get around the variety of low-power specifications, developers must identify a common operating mode consisting of two sections: electrical specifications and low-power functionality.Comparing Electrical Specifications of MicrocontrollersThe electrical specifications are available in the data sheet, but determining which specifications are relevant may require some digging. Usually the electrical specifications are organized by vendor-specific power mode. This makes assessment slightly more difficult, as it requires knowledge and familiarity with the functionality of each power mode.In general, it is beneficial to define a set of operating conditions and then map them to a power mode. For example, the developer might define the following set of operating conditions:∙Sleep mode current consumption with state and RAM retentiono All other peripherals disabled∙Sleep mode current consumption with RTC running with state and RAM retentiono RTC enabled and running all other peripherals disabled.∙Wake time∙Supply voltage rangeOnce the operating conditions are clearly defined, it should be easy to determine the applicable vendor-specific power mode.Additional Low-Power FunctionalityThe second section, low-power functionality, is not as easy to locate in the vendor’s documentation and may be spread across the data sheet and reference manual. Examples of low-power functionality include: ∙Available wake sources∙How code resumes execution∙Peripherals capable of operating in sleep mode.Once the common operating mode has been clearly defined, developers can begin to examine the documentation in more detail.While going through this exercise of compiling data, keep in mind that there may be some MCU-specific features that can further optimize an application for ultra-low power. Optimizations may reduce bill of material (BOM) costs, provide longer product life or provide greater design flexibility. For example, an on-chip dc-dc converter can efficiently provide power to the system and decrease power consumption. This can enable the use of smaller batteries, which will decrease the overall BOM costs, or provide power budget flexibility. A variety of wake sources can provide design flexibility and allow the microcontroller to stay in the lowest power mode as long as possible, further reducing the average current consumption of the application.Allowing firmware to scale the internal supply voltage is another optimization knob available to the developer. If an MCU is operating at a slow frequency, it may be possible to decrease the supply voltage and save power. Selective clock gating allows hardware blocks to be disconnected from the active circuits, preventing inactive peripherals from consuming power. These types of features are not comprehended by supply current specifications that are commonly used to rank low-power MCUs, but are critical to achieving the lowest overall system power consumption.Reducing Complexity Using ToolsAs MCUs become more and more configurable to achieve the lowest power consumption, they also can become more complex. To cope with this increased complexity, developers should take a close look at the evaluation platforms available for an MCU and the overall ease of implementing a solution. For example, the development board and software tools used to program the MCU should be intuitive and easy-to-use. Hardware that is difficult to understand or use is not likely to lead to an easy firmware development process. From a firmware perspective, MCU vendors should supply firmware examples that can recreate specifications from the data sheet. If advertised current consumption specifications cannot be recreated on an evaluation platform, it is likely that it will be just as difficult (if not impossible) to configure the MCU to achieve these numbers on custom hardware. Giving customers a variety of code examples that can be used as a starting point for their code development can reduce time-to-market and help engineers learn to use a device.Graphical configuration tools can aid in development and help the developer gain a deeper understanding of an MCU. When developing low-power applications, it is helpful to know where the total consumed power is going. This information is useful because it highlights what aspect of a design needs to be further optimized and can also help the developer understand the overall architecture of the device. Ideally, low-power configuration tools could give tips on further reducing power as well as highlight any configuration errors that were detected throughout the configuration process. For example, the Power Estimator utility within Silicon Labs’ AppBuilder graphical configuration tool provides Power Tips that give configuration guidance and a power-budget pie chart showing how much power is consumed and which peripherals are consuming the power. As configuration changes are made, the pie chart automatically updates.Figure 1. Power Estimator Enables Developers to Optimize for Lowest Current Consumption To facilitate the microcontroller comparison process, the following table provides a list of common operating modes, as well as system-level optimizations and development tools available for Silicon Labs’32-bit SiM3L1xx MCUs based on the ARM® Cortex™-M3 core.SummaryEvaluating and selecting a microcontroller for a low-power application requires more than a quick scan of the first page of the data sheet. Determining which MCU provides the lowest overall system power requires developers to know the device’s supply current specifications, as well as any system-level optimizations that can reduce the overall supply current.Unfortunately, each MCU vendor specifies operating conditions differently and in some cases advertises a low-power number that is available in an unusable mode. Using a common operating mode to compare MCUs will prevent developers from being misled by vendor claims of ultra-low-power operation.Once the electrical characteristics of a device are understood and quantified, developers should take a look at the evaluation platform and software tools available. These considerations are crucial in getting an engineering team up and running quickly and should be included in the final microcontroller selection process. Find out more about Silicon Labs’ microcontrollers, including 8-bit and 32-bit MCUs at/mcu.# # #Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size, analog intensive, mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class engineering team. Patent: /patent-notice© 2013, Silicon Laboratories Inc. ClockBuilder, DSPLL, Ember, EZMac, EZRadio, EZRadioPRO, EZLink, ISOmodem, Precision32, ProSLIC, QuickSense, Silicon Laboratories and the Silicon Labs logo are trademarks or registered trademarks of Silicon Laboratories Inc. ARM and Cortex-M3 are trademarks or registered trademarks of ARM Holdings. ZigBee is a registered trademark of ZigBee Alliance, Inc. All other product or service names are the property of their respective owners.。
重庆市鑫盈电子有限公司 RAC01-GB 系列 AC DC 电源说明书
1 Watt Single OutputEMC Class BThe RAC01-GB series are low cost AC/DC power supplies, ideal for PCB mounted, compact, board level industrial applications. They feature universal AC input voltage range, regulated and short-circuit-proof isolated DC outputs, low standby power consumption and -25°C to +80°C operating temperature range. The RAC01-GB have a built-in Class B / FCC Part 15 EMCfilter, are certified to EN60950 and EN62368 safety standards and come with a three year warranty.AC/DC Conver terE196683RAC01-GB Selection GuidePart Input Output Output Efficiency Max. Capacitive Number Voltage Range Voltage Current typ Load (1) [VAC] [VDC] [mA] [%] [µF]RAC01-3.3SGB 85-264 3.3 303 63 500RAC01-05SGB 85-264 5 200 63 500RAC01-12SGB 85-264 12 83 68 200RAC01-24SGB 85-264 24 42 63 200Notes:Note1: Measured with all input voltages at +25°C with constant resistant mode at full loadModel NumberingOrdering Examples:RAC01-12SGB 12VoutSingle Output EMC Class BS inglenom. Output Power nom. Output VoltageRAC01-__ SGBEMC Class B ULIEC/EN60950-1 certified UL/IEC/EN62368-1 certifiedCAN/CSA-C22.2 No. 62368 certified IEC/EN62368-1 certified CB ReportSpecifications(measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated)Specifications(measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated)Specifications (measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated)ENVIRONMENTALParameterConditionValueOperating Temperature Range @ natural convection 0.1m/sfull load-25°C to +70°C refer to “Derating Graph”-25°C to +80°CMaximum Case Temperature +120°C Temperature Coefficient 0.03%/K Operating Altitude (8)4000mOperating Humidity non-condensing10% - 95% RH max.Pollution Degree PD2Shock 10-150Hz, 2G 10min./1cycle, period 60min. each along x,y,z axesVibration according to MIL-STD-202G20G/11ms pulse, 3 times at each x, y, z axesMTBF(9)according to MIL-HDBK-217F, method 2+25°C +70°C1691 x 103 hours 424 x 103 hours-25-10520355080951008060409070503020100O u t p u t L o a d [%]Ambient Temperature [°C]7065Derating Graph(@ Chamber and natural convection 0.1m/s)Line Derating1008060409070503020100O u t p u t L o a d [%]Input Voltage [VAC]8590264Notes:Note8: Recognized by UL for safe operation up to 4000m. High altitude operation may impact the performance and lifetime. ********************************************* Note9: Based on calculation for 5VoutSAFETY AND CERTIFICATIONSCertificate Type (Safety)Report / File NumberStandard Information Technology Equipment, General Requirements for Safety SA1804152L01001IEC60950-1:2005 2nd Edition + Am2:2013EN60950-1:2006 + A12:2011 + A2:2013Audio/Video, information and communication technology equipment - Part1: Safety requirementsE196683-A5 and E19668-A6001UL62368-1, 2nd EditionCAN/CSA-C22.2 No. 62368-1-14Audio/Video, information and communication technology equipment - Part1: Safety requirements (CB Scheme)SA1804152S 001IEC62368-1:2014 2nd EditionAudio/Video, information and communication technology equipment - Part1: Safety requirements EN62368-1:2014+A11:2017RoHS2RoHS 2011/65/EU + AM2015/863continued on next pageSpecifications (measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated)EMC ComplianceConditionStandard / CriterionElectromagnetic compatibility of multimedia equipment - Emission requirements EA1804152E 01001EN55032, Class BInformation technology equipment - Immunity characteristics - Limits and methods of measurementEN55024:2010 + A1:2015ESD Electrostatic discharge immunity testAir ±2, 4, 8kV Contact ±2, 4kVEN61000-4-2:2009, Criteria ARadiated, radio-frequency, electromagnetic field immunity test 3V/mEN61000-4-3:2006 + A2:2010, Criteria AFast Transient and Burst Immunity AC Power Port: ±1.0kV EN61000-4-4:2012, Criteria A Surge ImmunityAC Power Port: L-N ±1.0kVEN61000-4-5:2014, Criteria B Immunity to conducted disturbances, induced by radio-frequency fields AC Power Port 3V EN61000-4-6:2014, Criteria A Power Magnetic Field Immunity 50Hz, 1A/m EN61000-4-8:2009, Criteria A Voltage Dips and Interruption Voltage Dips >95%EN61000-4-11:2004, Criteria A Voltage Dips 30%EN61000-4-11:2004, Criteria B Voltage Interruptions >95%EN61000-4-11:2004, Criteria BLimits of Voltage Fluctuations & FlickerEN61000-3-3:2013Specifications(measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated)PACKAGING INFORMATIONParameter Type Value Packaging Dimension (LxWxH)tube470.0 x 36.4 x 26.4mm Packaging Quantity20pcs Storage Temperature Range-25°C to +85°C Storage Humidity non-condensing5% - 95% RH max.The product information and specifications may be subject to changes even without prior written notice.The product has been designed for various applications; its suitability lies in the responsibility of each customer. The products are not authorized for use in safety-critical applications without RECOM’s explicit written consent. A safety-critical application is an application where a failure may reasonably be expected to endanger or cause loss of life, inflict bodily harm or damage property. The applicant shall indemnify and hold harmless RECOM, its affiliated companies and its representatives against any damage claims in connection with the unauthorizeduse of RECOM products in such safety-critical applications.。
RT9610CGQW规格书
2
DS9610C-01 April 2016
RT9610C
Functional Block Diagram
VCC BOOT
POR UGATE EN VCC R PWM R Tri-State Detect Control Logic Shoot-Through Protection VCC LGATE GND PHASE
Features
Drives Two N-MOSFETs Adaptive Shoot-Through Protection 0.5Ω On-Resistance, 4A Sink Current Capability Supports High Switching Frequency Tri-State PWM Input for Power Stage Shutdown Output Disable Function Integrated Boost Switch Low Bias Supply Current VCC POR Feature Integrated
Ordering Information
RT9610C Package Type QW : WDFN-8L 2x2 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free)
Note : Richtek produVCC LGATE GND PWM
WDFN-8L 2x2
Functional Pin Description
Pin No. 1 2 3 4 Pin Name EN PHASE UGATE BOOT Pin Function Enable Pin. When low, both UGATE and LGATE are driven low and the normal operation is disabled. Switch Node. Connect this pin to the source of the upper MOSFET and the drain of the lower MOSFET. This pin provides a return path for the upper gate driver. Upper Gate Drive Output. Connect to the gate of high side power N-MOSFET. Floating Bootstrap Supply Pin for Upper Gate Drive. Connect the bootstrap capacitor between this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. Control Input for Driver. The PWM signal can enter three distinct states during operation. Connect this pin to the PWM output of the controller. Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. Lower Gate Drive Output. Connect to the gate of the low side power N-MOSFET. Input Supply Pin. Connect this pin to a 5V bias supply. Place a high quality bypass capacitor from this pin to GND.
Low Power Mode in Cloud Storage Systems及翻译
软件工程2班代兄2011020339Low Power Mode in Cloud Storage Systems低功率模式在云存储系统Danny Harnik, Dalit Naor and Itai SegallIBM Haifa Research Labs, Haifa, Israelfdannyh, dalit, itaisg@.AbstractWe consider large scale, distributed storage systems with a redundancy mechanism; cloud storage being a prime example. We investigate how such systems can reduce their power consumption during low-utilization time intervals by operating in a low-power mode. In a low power mode, a subset of the disks or nodes are powered down, yet we ask that each data item remains accessible in the system; this is called full coverage. The objective is to incorporate this option into an existing system rather than redesign the system. When doing so, it is crucial that the low power option should not affect the performance or other important characteristics of the system during full-power (normal) operation. This work is a comprehensive study of what can or cannot be achieved with respect to full coverage low power modes.我们考虑包含冗余机制的大规模、分布式的存储系统,云存储是一个最典型的例子。
希捷Exos 7E2000企业硬盘说明书
Best-Fit ApplicationsStorage-hungry business applications Storage area networks (SAN) and network attached storage (NAS)Maximum-capacity entry-level servers and blade serversRich media content storageEnterprise backup and restore—D2D,virtual tapeCloud computingThe Seagate ® Exos ™ 7E2000 enterprise hard drives can store large amounts of data without using a ton of system space—up to 2000GB in a compact 2.5-inch form factor. Exos 7E2000 provides the density, low power consumption and data integrity needed in traditional data centers and the cloud.Trusted Bulk Data Storage in a Small Data Center FootprintExos 7E2000 drives optimize your data center footprint in a proven 2.5-inch form factor forinfrastructures requiring highly reliable access to bulk data. Conventional magnetic recording (CMR)technology helps Exos 7E2000 catalyze the datasphere, enabling data center architects and ITprofessionals to deliver trusted performance, rock-solid reliability and ironclad security for demanding 24×7 operations. A 2M-hr. MTBF rating with supported workloads of 550TB/year, dense data storage and low power consumption help you meet your storage SLAs while lowering TCO.Significant Hard Drive Power SavingsExos 7E2000 drives ensure data confidence with a reliable, low-power platform for efficient bulkstorage operations, even in harsh data center environments. Exos 7E2000 helps reduce per-gigabyte cooling and energy costs by packing high capacities into an SFF, low-power consumption drive.Included PowerChoice ™ technology empowers IT organizations to tailor systems for optimalperformance and power consumption, resulting in power savings of up to 35% over traditional 3.5-inch drives, and potentially operating as low as 1.1 watts when idle.Enhanced Enterprise Reliability, Data Protection and SecurityExos 7E2000 security features help protect data where it lives—on the drive. Exos 7E2000 drives help prevent unauthorized access and safeguard stored data with security levels that include SecureDownloads & Diagnostics, TCG-compliant Self-Encrypting Drive and government-grade FIPS tamper-resistent hard drive.1 Seagate Secure ™ drives simplify drive repurposing and disposal, help protect data-at-rest, and comply with corporate and federal data security mandates.1 Self-Encrypting Drives (SED) and FIPS 140-2 Validated drives are not available in all models or countries. May require TCG-compliant host or controller support. Instant Secure Erase (ISE) functionality meets the ISO/IEC 27040 and NIST 800-88 guidelines for complete and authoritative drive sanitization.4K Native5xx EmulationCapacity2TB1TB2TB1TB Standard Model Numbers ST2000NX0263ST1000NX0323ST2000NX0273ST1000NX0333 Seagate Secure™ Model1ST2000NX0323ST1000NX0363ST2000NX0343ST1000NX0373 Seagate Secure SED-FIPS Model1ST2000NX0333—ST2000NX0353—Interface12 Gb/s SAS12 Gb/s SAS12 Gb/s SAS12 Gb/s SAS PowerChoice™ Technology Yes Yes Yes Yes Protection Information Yes Yes Yes YesLow Halogen Yes Yes Yes YesSeagate RAID Rebuild®Yes Yes Yes YesMTBF2,000,000hr2,000,000hr2,000,000hr2,000,000hr Reliability Rating @ Full 24×7 Operation (AFR)0.44%0.44%0.44%0.44% Nonrecoverable Read Errors per Bits Read, Max 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 Power-On Hours per Year (24×7)8760876087608760Sector Size (Bytes per Logical Sector)4K4K5xx5xxLimited Warranty (years)5555Spindle Speed (RPM)7200RPM7200RPM7200RPM7200RPM Cache, Multisegmented (MB)128128128128Interface Access Speed (Gb/s)12.0, 6.0, 3.012.0, 6.0, 3.012.0, 6.0, 3.012.0, 6.0, 3.0 Max. Sustained Transfer Rate OD (MB/s)136MB/s136MB/s136MB/s136MB/s Average Latency (ms) 4.16 4.16 4.16 4.16 Interface Ports Dual Dual Dual DualRotation Vibration @ 1800Hz (rad/s²)16161616Average Idle Power (W) 3.53 3.29 3.53 3.29Typical Operating, Random Read (W) 6.02 5.9 6.02 5.9 PowerChoice(TM) Technology (Standby) (W) 1.52 1.52 1.52 1.52Power Supply Requirements+12V and +5V+12V and +5V+12V and +5V+12V and +5VTemperature, Operating (°C)5°C – 55°C5°C – 55°C5°C – 55°C5°C – 55°C Vibration, Operating, 5Hz to 500Hz (Grms)0.50.50.50.5 Vibration, Nonoperating, 5Hz to 500Hz (Grms)3333Shock, Operating, 2ms (Gs)25252525Shock, Nonoperating, 2ms (Gs)400400400400 Acoustics, Typical Idle (bels) 2.8 2.8 2.8 2.8 Acoustics, Typical Seek (bels) 3.2 3.2 3.2 3.2Height (in/mm)20.591in/15.00mm0.591in/15.00mm0.591in/15.00mm0.591in/15.00mm Width (in/mm)2 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm Depth (in/mm)2 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm Weight (g/lb)198g/0.437lb190g/0.419lb198g/0.437lb190g/0.419lb Carton Unit Quantity40404040Cartons per Pallet/Cartons per Layer60/1060/1060/1060/101 Self-Encrypting Drives (SED) and FIPS 140-2 Validated drives are not available in all models or countries. May require TCG-compliant host or controller support. Instant Secure Erase (ISE) functionality meets the ISO/IEC 27040 and NIST 800-88 guidelines for complete and authoritative drive sanitization.2 These base deck dimensions conform to the Small Form Factor Standard (SFF-8201) found at . For connector-related dimensions, see SFF-8223.5xx Native4K NativeCapacity2TB1TB2TB1TB Standard Model Numbers ST2000NX0433ST1000NX0453ST2000NX0243ST1000NX0303 Seagate Secure™ Model1——ST2000NX0283ST1000NX0343 Seagate Secure SED-FIPS Model1————Interface12 Gb/s SAS12 Gb/s SAS SATA 6Gb/s SATA 6Gb/s PowerChoice™ Technology Yes Yes Yes Yes Protection Information Yes Yes No NoLow Halogen Yes Yes Yes YesSeagate RAID Rebuild®Yes Yes Yes YesMTBF2,000,000hr2,000,000hr2,000,000hr2,000,000hr Reliability Rating @ Full 24×7 Operation (AFR)0.44%0.44%0.44%0.44% Nonrecoverable Read Errors per Bits Read, Max 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 Power-On Hours per Year (24×7)8760876087608760Sector Size (Bytes per Logical Sector)5xx5xx4K4KLimited Warranty (years)5555Spindle Speed (RPM)7200RPM7200RPM7200RPM7200RPM Cache, Multisegmented (MB)128128128128Interface Access Speed (Gb/s)12.0, 6.0, 3.012.0, 6.0, 3.0 6.0, 3.0, 1.5 6.0, 3.0, 1.5Max. Sustained Transfer Rate OD (MB/s)136MB/s136MB/s136MB/s136MB/s Average Latency (ms) 4.16 4.16 4.16 4.16 Interface Ports Dual Dual Single Single Rotation Vibration @ 1800Hz (rad/s²)16161616Average Idle Power (W) 3.53 3.29 3.87 3.51Typical Operating, Random Read (W) 6.02 5.9 5.22 4.74 PowerChoice(TM) Technology (Standby) (W) 1.52 1.52 1.14 1.14Power Supply Requirements+12V and +5V+12V and +5V+12V and +5V+12V and +5VTemperature, Operating (°C)5°C – 55°C5°C – 55°C5°C – 55°C5°C – 55°C Vibration, Operating, 5Hz to 500Hz (Grms)0.50.50.50.5 Vibration, Nonoperating, 5Hz to 500Hz (Grms)3333Shock, Operating, 2ms (Gs)25252525Shock, Nonoperating, 2ms (Gs)400400400400 Acoustics, Typical Idle (bels) 2.8 2.8 2.8 2.8 Acoustics, Typical Seek (bels) 3.2 3.2 3.2 3.2Height (in/mm)20.591in/15.00mm0.591in/15.00mm0.591in/15.00mm0.591in/15.00mm Width (in/mm)2 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm Depth (in/mm)2 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm Weight (g/lb)198g/0.437lb190g/0.419lb198g/0.437lb190g/0.419lb Carton Unit Quantity40404040Cartons per Pallet/Cartons per Layer60/1060/1060/1060/101 Self-Encrypting Drives (SED) and FIPS 140-2 Validated drives are not available in all models or countries. May require TCG-compliant host or controller support. Instant Secure Erase (ISE) functionality meets the ISO/IEC 27040 and NIST 800-88 guidelines for complete and authoritative drive sanitization.2 These base deck dimensions conform to the Small Form Factor Standard (SFF-8201) found at . For connector-related dimensions, see SFF-8223.512 Emulation512 NativeCapacity2TB1TB2TB1TB Standard Model Numbers ST2000NX0253ST1000NX0313ST2000NX0403ST1000NX0423 Seagate Secure™ Model1ST2000NX0303ST1000NX0353——Seagate Secure SED-FIPS Model1————Interface SATA 6Gb/s SATA 6Gb/s SATA 6Gb/s SATA 6Gb/s PowerChoice™ Technology Yes Yes Yes Yes Protection Information No No No NoLow Halogen Yes Yes Yes YesSeagate RAID Rebuild®Yes Yes Yes YesMTBF2,000,000hr2,000,000hr2,000,000hr2,000,000hr Reliability Rating @ Full 24×7 Operation (AFR)0.44%0.44%0.44%0.44% Nonrecoverable Read Errors per Bits Read, Max 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 1 sector per 10E15 Power-On Hours per Year (24×7)8760876087608760Sector Size (Bytes per Logical Sector)512512512512Limited Warranty (years)5555Spindle Speed (RPM)7200RPM7200RPM7200RPM7200RPM Cache, Multisegmented (MB)128128128128Interface Access Speed (Gb/s) 6.0, 3.0, 1.5 6.0, 3.0, 1.5 6.0, 3.0, 1.5 6.0, 3.0, 1.5Max. Sustained Transfer Rate OD (MB/s)136MB/s136MB/s136MB/s136MB/s Average Latency (ms) 4.16 4.16 4.16 4.16 Interface Ports Single Single Single Single Rotation Vibration @ 1800Hz (rad/s²)16161616Average Idle Power (W) 3.87 3.51 3.87 3.51Typical Operating, Random Read (W) 5.22 4.74 5.22 4.74 PowerChoice(TM) Technology (Standby) (W) 1.14 1.14 1.14 1.14Power Supply Requirements+12V and +5V+12V and +5V+12V and +5V+12V and +5VTemperature, Operating (°C)5°C – 55°C5°C – 55°C5°C – 55°C5°C – 55°C Vibration, Operating, 5Hz to 500Hz (Grms)0.50.50.50.5 Vibration, Nonoperating, 5Hz to 500Hz (Grms)3333Shock, Operating, 2ms (Gs)25252525Shock, Nonoperating, 2ms (Gs)400400400400 Acoustics, Typical Idle (bels) 2.8 2.8 2.8 2.8 Acoustics, Typical Seek (bels) 3.2 3.2 3.2 3.2Height (in/mm)20.591in/15.00mm0.591in/15.00mm0.591in/15.00mm0.591in/15.00mm Width (in/mm)2 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm 2.760in/70.10mm Depth (in/mm)2 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm 3.955in/100.45mm Weight (g/lb)198g/0.437lb190g/0.419lb198g/0.437lb190g/0.419lb Carton Unit Quantity40404040Cartons per Pallet/Cartons per Layer60/1060/1060/1060/101 Self-Encrypting Drives (SED) and FIPS 140-2 Validated drives are not available in all models or countries. May require TCG-compliant host or controller support. Instant Secure Erase (ISE) functionality meets the ISO/IEC 27040 and NIST 800-88 guidelines for complete and authoritative drive sanitization.2 These base deck dimensions conform to the Small Form Factor Standard (SFF-8201) found at . For connector-related dimensions, see SFF-8223.AMERICAS Seagate Technology LLC 10200 South De Anza Boulevard, Cupertino, California 95014, United States, 408-658-1000ASIA/PACIFIC Seagate Singapore International Headquarters Pte. Ltd. 7000 Ang Mo Kio Avenue 5, Singapore 569877, 65-6485-3888EUROPE, MIDDLE EAST AND AFRICA Seagate Technology SAS 16-18, rue du Dôme, 92100 Boulogne-Billancourt, France, 33 1-4186 10 00© 2017 Seagate Technology LLC. All rights reserved. Seagate, Seagate Technology and the Spiral logo are registered trademarks of Seagate Technology LLC in the United States and/or other countries. Exos, the Exos logo, PowerChoice, Seagate RAID Rebuild, Seagate Secure and the Seagate Secure logo are either trademarks or registered trademarks of Seagate Technology LLC or one of its affiliated companies in the United States and/or other countries. All other trademarks or registered trademarks are the property of their respective owners. When referring to drive capacity, one gigabyte, or GB, equals one billion bytes and one terabyte, or TB, equals one trillion bytes. Your computer’s operating system may use a different standard of measurement and report a lower capacity. In addition, some of the listed capacity is used for formatting and other functions, and thus will not be available for data storage. Actual data rates may vary depending on operating environment and other factors, such as chosen interface and disk capacity. The export or re-export of Seagate hardware or software is regulated by the U.S. Department of Commerce, Bureau of Industry and Security (for more information, visit ), and may be controlled for export, import and use in other countries. Seagate reserves the right to change, without notice, product offerings or specifications. DS1955.1-1709US September 2017。
Igaro D2 Pro R3 Manual
The Igaro D2 is designed to work only with STVZO 3W dynamo hubs (all Shimano, SON and SP dynamo hub models are supported). 2.4W "LED" dynamo hubs provide less power and are less suited to USB charging. Using bottle or rim driven dynamos may damage the Igaro D2 and such usage is not covered under warranty.POWER LEAD: Ensure the power lead is immobile by securing it (i.e cable tie) so that it moves with the main unit. This will prevent metal fatigue of the wire which could eventually lead to fracture. For example if the unit is situated on the handlebar then the power lead should move with the handlebar. A violation of this rule would be to place the unit on the handlebar and securing the power lead to the head tube.USB-C LEADS: Both USB Adapter Charging v1.2 (USB-A) and USB-C CC (Current Control) protocols are supported. Poor quality USB-C leads may only support the USB-A protocol and not work well if at all for USB-C to USB-C usage. Use original or good quality USB-C leads that specify USB-C CC (Current Control) or USB-C PD (Power Delivery) support. Keep leads short for slightly higher efficiency.As with the power lead we recommend immobilizing USB-C leads to move with the main unit. Also note that all USB ports suffer electrolysis (corrosion of the pins) when wet. For a long working life it is vital water does not enter USB-C ports. This is discussed further in Placement.For supporting multiple devices use USB-C leads with metal connectors. These are thinner than most plastic counterparts. Some plastic ones will work, as shown, but rubberized ones generally won't fit. For USB-C/USB-A adapter, use a cable with appropriate ends and not a plug adapter.LIGHTS: Dynamo lights can be wired in parallel directly to the dynamo hub. For Schmidt SON hubs piggyback spade connectors can be used. For Shimano and SP both wires can be twisted together and inserted into the plug that comes with the dynamo hub.Dynamo hubs don't have the capability to reliably power a dynamo light and USB device concurrently with a degree of reliability. For this reason we've chosen to automatically turn the Igaro D2 off if a dynamo light is detected.PLACEMENT: Chose a location where the USB ports are protected from water ingression. While the Igaro D2 is water-proof water entering a powered USB port will result in corrosion of the pins and lead to eventual failure1 (see FAQ). The Igaro D2 produces no heat and can be placed inside a bag however when doing so consider how other items inside the bag could move and apply force to USB leads and the sockets they connect to.A handlebar mount is available that places the unit in an easy-to-access location and at an angle which naturally protects from water ingression with a rain skirt providing protection from driving rain. This is our recommended mounting solution.We've also designed 3D printer models for positioning under the stem or to allow re-using an existing bicycle light bracket via a longer bolt. See thingiverse for details. Occasionally we print batches of these and add them to our online store however they are time/resource intensive and we frequently run out of stock. For customization you can download and edit the Freedcad (0.18) under stem or light bracket files. OPERATION: Four lights (red and blue per USB port) provide status and diagnostic information. You should only attempt to look at them in a safe and controlled environment. Igaro is not responsible for loss of bicycle control or damage or injury caused due to attempting to inspect these lights whilst riding.When the bicycle begins to move version information is displayed by a series of red flashes. The left red light denotes software version and the right red light denotes the selected dynamo hub model.The system then waits for stable motion, which is roughly the same speed held for 4 seconds. After this dynamo light detection is performed. If a light is detected the unit will alternative its red lights. For this reason always come to a complete stop when turning dynamo lights on or off.The red light for either USB output indicates a minimum speed has not been reached. The default minimum speed is 8kph and will later vary based upon whether a USB device is successfully powered. For example if a USB device fails to power on at 8kph a percentage increase will apply and a further attempt will be made at the higher speed. If successful and then later speed decreases to 5kph and power fails the new speed will be 5kph plus a percentage increase. The speed value for each USB output is independent.When either USB output is powered the left red light will be replaced by a left blue light. This blue light will have a pattern ranging from a 'blip' to full steady and indicates how much power any connected USB device is consuming.With power successfully applied to USB output #1, and after a short period of steady motion, if there is minimal output (i.e the connected USB device is fully charged), and the minimum speed is met for USB output #2, then this output will enable. If USB output #1 later begins drawing significant power then USB output #2 will be disabled. As such, USB output #1 can be considered to have priority making it better for primary devices such as GPS and smartphones whereas USB output #2 is better for power-banks, camera chargers and similar.Power availability and output consumption are continuously assessed. If an imbalance is detected the system may restart a USB output (auto-reconnect) to further greater consumption. If unsuccessful it won't occur again.Blue light patterns•Blip on - USBv1 (<= 100mA).•Half on/half off - USBv2 (<= 500mA).•Three quarter on/quarter off - USBv3 (<= 900mA).•Steady on - USB-C CC (<= 1.5A).TIPS: The Igaro D2 has no internal storage and so power isn't available when stationary. Constant monitoring ensures USB devices won't experience unstable power fluctuation as the bicycle slows down. Some USB devices like smartphones may 'wake-up' when power is lost however newer phones (Android 9+) usually have a setting in the menu to disable this. See the general FAQ for details.FAQ: A common query is whether it's best to charge a device direct or to charge a power-bank and then 'dump' the power later on. With the Igaro D2 lacking an internal power store it's more important to choose the right approach for the USB devices you wish to charge.COMPATIBLITY: Always remember, there's no such thing as a USB port that doesn't corrode when wet and to keep water out for a long working life. If water does enter a USB port immediately stop riding and remove any connected USB lead. Shake the unit downwards to remove excess water then point upwards to allow remaining water to evaporate. Do not start cycling until you are sure the USB port is completely dry. SOFTWARE: Internally the Igaro D2 uses a programmable processor which relies on software, which we write. It's well tested and we don't expect to discover any bugs or to release new features, however we've left the door open for things we can't plan for, specifically future dynamo lights which are found to be problematic with the Igaro D2's detection method. Software updates will always be free, except for shipping.。
Low Power Design Introduction v1.0
Agenda•Low Power Features•Platform and module Power Mode •Power Saving Sequence •Chipset Power Design•Power software•SummaryLow Power InterventionFigure QuotedPDK: Process Design KitAMSIP: Analog Mixed Signal IPMain Features•Low power design is the best important part of mobile system design −Thermal management focus those extreme cases.−System task covers SW, HW and chipset.•IP and modules:−Core platform regulators can be controlled into off mode or low powermode−Use dedicated low power CPU to manage power state transition andprovide low power services.−MM IPs automatic on/off without CPU involvement.−Power domains and low power states are defined for CPU/GPU and IPs.•Dynamic modes:−DVFS.−Support ultra low power PLL operation.−Support DDR DFS, PD and PASR.•Others:−Better chipset architecture and silicon process−AVS and body biasing give the best optimized performancesPower Supply Modes and Control •Power supply working modes: all core platform regulators can be controlled in one of the below modes per use case−OFF mode−High Power (HP) mode−Low Power (LP) mode•Power supply control−Each of regulator/SMPS modes can be drivenindependently either by software or by hardware:•HP/LP mode selection signal•Registers•Automatic adaptionPower vs. Speed/VoltageSpeed@TT/GHzT o t a l p o w e r (W )ARMCPU and GPUSmart Supply: Envelope tracking•RF/Audio PA has the enveloping profile when it is functional.•The smart supply can output the power supply as the PA enveloping tracking.•This smart power supply can save 30% dynamic power consumption.•Example:Figure QuotedPower Mode –Storages (SD/eMMC)•SD card power states•eMMC card power statesState SD card internal state Card VDD Level shifterOutput clockKernel and peripheral clocksActive Transfer ON HP ON ON ON Idle Transfer session completed ON HP ON OFF ON Low powerSleep ON LP OFF OFF OFF OffOFFOFFOFFOFFOFFState eMMC internalstate 3V eMMC V CCOutput clockKernel and peripheralclocksActive Transfer ON HP ON ON Idle Transfer session completed ON HP OFF ON Low power Sleep ON LP OFF OFF Sleep modeOFFOFFOFFOFFPower Mode –Wireless Connectivity Component State DescriptionWLAN Active The device is in operation mode.Sleep•the device is in sleep mode or in RX idle mode•the 32 kHz clock needed (and it can request autonomouslythe 26 MHz clock for the RX idle activity.•SDIO interface remains available.Off•The device is OFF.•Host controls the OFF mode through the WLAN enable signal.BT/GPS Normal The device is in full operation mode.Idle•The device is in stop mode, but UART is available.•The rest of the system keeps working normally. Sleep•Only 32KHz clock is needed.•UART is not available.Off Host controls the OFF mode through the ENABLE signal.NFC Full power•NFC Operating modes: Card / Tag Emulation / Reader / Writer Low power•VBAT is off•External field is on•NFC Operating modes: Card / Tag EmulationOff VBAT and external field are off.Example1 – ARM Enter/Exit Deep Sleep①②⑤③ 1. 2. 3. 4. 5. System status transition trigger/indicator Power mode transition time External/Internal Clock preparation time The task sequence Some IP recovery task and time ④Nokia Internal Use Only⑥Example2 – Modem Enter/Exit Deep Sleepwakeup sleepWakeup/sleep event PWRCTRL0_OUT internal PWRREQ/SYSCLKREQ1 VIO18 HP mode VSAFE VSAFE HP mode VPLL HP mode EXTSUPPLY3LPN buck/boost HP APE PRCMU clock internal(1) (2) <8ms (4) <155us VSAFE_active VSAFE_sleep <20uss <31u(7) Holden by PCRMU at least 4msULPCLK (38.4 MHz internal PLL in the APE,need VPLL to operate)ULPCLKREQ internal~4.1msREFCLK_REQ VRAD_REQ/SYSCLKREQ5/VXO_REQ<464us <3ms <4msVRF1(LDO_C)/VXO REFCLK (26 MHz)~10usModem PRCMU I2C @10MHz VMODPLL(LDO_F) VMOD Modem_DDR_REQ Modem_DDR_ACK SYSCLKREQOUTT1 T3(3) <464us(6) <800us<500us (5) <2msNokia Internal Use Only T T T0 2 4T5T7 T6 T8T9 T11 T13 T10 T12 T14Example3 – Connectivity Enter/Exit Deep SleepNokia Internal Use OnlyChipset Low Power Design24Nokia Internal Use OnlySilicon Design•Power consumption− Dynamic/Static/Leakage − Active or idle points Istat.•Transistor amount •Silicon Process:− more than 28nmSilicon processFigure QuotedNokia Internal Use OnlyLeakage current•IC internal leakage− Silicon leakage − Cross domain leakage − Internal pull-up and pull-down•IC external leakage− − − − External pull-up and pull-down External transistors Over drive power domains Mismatched I/O interfaces• Damaged parts and wrong design.26Nokia Internal Use OnlyIP hot plug•All of IP have the power saving mode like hot plug.− Sleep or idle mode − Hot plug Example: ARM cores and LPDDR controllersInternal busModem27Nokia Internal Use OnlyChipset Power Domain - Example28Typical domains: 1. Min. system 2. External applications 3. CPU core 4. CachesNokia Internal Use OnlyLow Power software29Nokia Internal Use OnlyPower software•Power control software− Power UC control − All of power state management − Device driver• Example: USB•Power simulation− ACEplorer − Cofluent studio − …•Software application software− Different SW applications have different power consumption.30Nokia Internal Use OnlyUse Case UI Type Total (mW)SOC/PMU/DDR (mW)Video Playback H.264 1080pVP 1080p Simple668404/133/130VP 1080p Complex876543/173/157VP 1080p no654396/129/127From ACEplorerTask Power DistributionFrom CofluentWIN7 PC ExampleNews web IE9Chrome 10Firefox 4Opera 11Safari 5 System11.728 W13.561 W11.830 W12.833 W12.060 W Battery Life4:46 hrs4:07 hrs4:44 hrs4:21 hrs4:38 hrsFigure QuotedPower Saving Techniques Summary。
NTE2055集成电路CMOS,3.5位A D转换器介绍说明书
NTE2055Integrated CircuitCMOS, 3 1/2 Digit A/D ConverterDescription:The NTE2055 is a high performance, low power, 3 1/2 digit A/D converter combining both linear CMOS and digital CMOS circuits on a single monolithic IC. Available in a 24–Lead DIP type package, this device is de-signed to minimize use of external components. With two external resistors and two external capacitors, the system forms a dual slope A/D converter with automatic zero correction and automatic polarity.The NTE2055 is ratiometric and may be used over a full–scale range from 1.999V to 199.9mV. Systems using this device may operate over a wide range of power supply voltages for ease of use with batteries, or with stan-dard 5V supplies. The output drive conforms with standard B–Series CMOS specifications and can drive a low–power Schottky TTL load.The high impedance MOS inputs allow applications in current and resistance meters as well as voltmeters. In addition to DVM/DPM applications, the NTE2055 finds use in digital thermometers, digital scales, remote A/D, A/D control systems, and in MPU systems.Features:D Accuracy: ±0.05% of Reading ±1 CountD Two Voltage Ranges: 1.999V and 199.9mVD Up to 25 Conversions /sD Z in > 100MΩD Auto–Polarity and Auto–ZeroD Single Positive Voltage ReferenceD Standard B–Series CMOS Outputs: Drives One Low Power Schottky LoadD Uses On–Chip System Clock, or External ClockD Wide Supply Range: e.g., ±4.5V to ±8.0VD Overrange and Underrange Signals AvailableD Operates in Auto Ranging CircuitsD Operates with LED and LCD DisplaysD Low External Component CountD Chip Complexity: 1326 FETsAbsolute Maximum Ratings:. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .DC Supply Voltage, V DD to V EE–0.5V to +18V Voltage, Ant Pin, Referenced to V EE, V–0.5V to V DD+0.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .DC Input Current, Per Pin, I in±10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range, T A–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Storage Temperature Range, T stg–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Note 1.This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid applications of any voltage higher than maximum rated voltages to this high impedance circuit. For proper operation it is recommended that V in and V out be constrained to the range V EE≤ (V in or V out) ≤ V DD.Recommended Operating Conditions: (V SS = 0 or V EE)DC Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DD to Analog GND, V DD+5.0 to 8.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V EE to Analog GND, V EE–2.8 to –8.0V Clock Frequency, f Clk32 to 400kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Zero Offset Correction Capacitor, C o0.1 ±20%µF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Electrical Characteristics:(C I = 0.1µF mylar, R I = 470kΩ @ V ref = 2V, R I = 27kΩ @ V ref = 200mV,R C = 300kΩ, T A = +25°C ; all voltages referenced to Analog GND, Pin1, unlessotherwise specified)Note 2.Accuracy – The accuracy of the meter at full scale is the accuracy of the setting of the reference volt-age. Zero is recalculated during each conversion cycle. The meaningful specification is linearity.In other words, the deviation from correct reading for all inputs other than positive full scale and zero is defined as the linearity specification.Note 3.Symmetry – Defined as the difference between a negative and positive reading of the same voltage at or near full scale.Note 4.Referenced to V SS for Pin9. Referenced to V EE for Pin10.Truth Table (DS1 =1)Notes for Truth Table:Q3–1/2 digit, low for “1”, high for “0”Q2–Polarity: “1” = positive, “0” = negative Q0–Out of range condition exists if Q0 =1. When used in conjunction with Q3 the typeof out of range condition is indicated, i.e., Q3 = 0 → OR or Q3 = 1 → UR.When only segment b and c of the decoder are connected to the 1/2 digit of the display 4,0, 7, and 3 appear as 1.The overrange indication (Q3 = 0 and Q0 = 1) occurs when the count is greater than 1999,e.g., 1.999V for a reference of 2V. The underrage indication, useful for autoranging circuits,occurs when the count is less than 180, e.g., o.180V for a reference of 2V.Caution:If the most significant digit is connected to a display other than a “1” only; such asa full digit display, segments other thanb andc must be disconnected. The BCD ti seven decoder must blank on BCD inputs 1010 to 1111.。
DEll电脑BIOS选项中英文对照
Wireless无线设备:使用该选项启用或禁用无线设备。该设置可以在操作系统中通过“Quickset”热键更改。该设置是否可用取决于“Wireless Control”的设置。
Serial Port串口:该选项可以通过重新分配端口地址或禁用端口来避免设备资源冲突。
Infrared Data Port红外数据端口。使用该设置可以通过重新分配端口地址或禁用端口来避免设备资源冲突。
U病人 Emulation
U病人仿真:使用该选项可以在不直接支持U病人的操作系统中使用U病人键盘、U病人鼠标及U病人软驱。该设置在BIOS启动过程中自动启用。启用该功能后,控制转移到操作系统时仿真继续有效。禁用该功能后在控制转移到操作系统时仿真关闭。
Pointing Device指针设备:设置为“SERIAL MOUSE”时外接串口鼠标启用并集成触摸板被禁用。设置为“PS/2 MOUSE”时,若外接PS/2鼠标,则禁用集成触摸板。设置为“TOUCH PAD-PS/2 MOUSE”(默认设置)时,若外接PS/2鼠标,可以在鼠标与触摸板间切换。更改在计算机重新启动后生效。
Internal Modem内置调制解调器:使用该选项可启用或禁用内置Modem。禁用(disabled)后Modem在操作系统中不可见。
LAN Controller网络控制器:使用该选项可启用或禁用PCI以太网控制器。禁用后该设备在操作系统中不可见。
CoNi2S4上电沉积NiS用于柔性固态非对称超级电容器
收稿日期:2020⁃07⁃23。
收修改稿日期:2020⁃11⁃09。
国家重点研发项目(No.2018YFB2001204)资助。
*通信联系人。
E⁃mail :*******************,**********************.cn第37卷第1期2021年1月Vol.37No.1171⁃179无机化学学报CHINESE JOURNAL OF INORGANIC CHEMISTRYCoNi 2S 4上电沉积NiS 用于柔性固态非对称超级电容器何业增*,1赵后强1柳朋1隋艳伟1委福祥1戚继球1孟庆坤1任耀剑1庄栋栋*,2(1中国矿业大学材料与物理学院,徐州221116)(2江苏大学材料科学与工程学院,镇江212013)摘要:采用一种在CoNi 2S 4上电沉积NiS 的有效方法来改善钴/镍硫化物的性能。
CoNi 2S 4@NiS 电极材料在1A·g -1时比电容达到1433F·g -1,并具有很好的倍率性能。
CoNi 2S 4@NiS 和还原氧化石墨烯组装成的柔性固态非对称超级电容器的能量密度在功率密度为800W·kg -1时达到36.6Wh·kg -1,并且在10000次充放电后表现出良好的循环性能,循环保持率达87.8%。
关键词:电化学;超级电容器;设计合成;CoNi 2S 4;NiS ;电沉积;固态中图分类号:O614.81+3;O614.81+2文献标识码:A文章编号:1001⁃4861(2021)01⁃0171⁃09DOI :10.11862/CJIC.2021.011Electrodeposition of NiS on CoNi 2S 4for Flexible Solid⁃State Asymmetric SupercapacitorsHE Ye⁃Zeng *,1ZHAO Hou⁃Qiang 1LIU Peng 1SUI Yan⁃Wei 1WEI Fu⁃Xiang 1QI Ji⁃Qiu 1MENG Qing⁃Kun 1REN Yao⁃Jian 1ZHUANG Dong⁃Dong *,2(1School of Materials and Physics,China University of Mining and Technology,Xuzhou,Jiangsu 221116,China )(2School of Material Science and Engineering,Jiangsu University,Zhenjiang,Jiangsu 212013,China )Abstract:An effective approach of depositing NiS on CoNi 2S 4was adopted to improve the performance of bimetalliccobalt/nickel⁃sulfide.The as⁃obtained CoNi 2S 4@NiS had an excellent specific capacitance of 1433F·g -1at 1A·g -1and shows a superior rate performance of 69.6%at 10A·g -1.A flexible solid ⁃state asymmetric supercapacitorassembled with CoNi 2S 4@NiS and the reduced graphene oxide showed a high energy density of 36.6Wh·kg -1at a power density of 800W·kg -1and had a fantastic cycle performance of 78.7%retention after 10000cycles,indicat⁃ing that the CoNi 2S 4@NiS nanocomposite is a promising electrode material for energy storage devices.Keywords:electrochemistry;supercapacitor;synthesis design;CoNi 2S 4;NiS;electrodeposition;solid⁃state0IntroductionWith the development of science and technology,the increasing demands of high efficiency energy stor⁃age units in modern electronics are becoming more salient [1⁃4].In the last few years,the supercapacitor hasbecome one of the promising effective and practical energy storage devices for its high power density,goodcycle stability and fast charging rate [5⁃7].The perfor⁃mance and application of supercapacitors are mainly determined by the electrode materials.Therefore,improving the performance of the electrode materials has become a hotspot in the field of energy storage [8⁃9].Transition metal sulfide,a new type of electrodematerial,has been extensively researched due to its su⁃perior electrochemical performance [10⁃12].Among all sul⁃无机化学学报第37卷fides,CoNi2S4has received increasing attention be⁃cause of the synergistic effect of nickel sulfide and co⁃baltous sulfide[13⁃16].Compared with the oxidation prod⁃ucts(CoNi2O4),the extension of chemical bonds inCoNi2S4is beneficial to form a more flexible structureand makes it easier for ion transport[17⁃20].However,therapid decay of specific capacitance during the charge⁃discharge cycles restricts the further application inenergy storage[21⁃24].To overcome this shortcoming,de⁃veloping composite materials has been proven to be themost efficient way and has been widely used in thepreparation of the electrode materials[25⁃26].It has beenreported that the hierarchical CoNi2S4@CC nanowire issuccessfully designed and synthesized by the hydro⁃thermal process,which shows excellent specific capaci⁃tance(1872F·g-1at1A·g-1),fantastic rate capabilityand superior cycling stability when utilized as the elec⁃trode material of supercapacitors[27].Furthermore,Co0.85Se@CoNi2S4/GF(graphene foam)nanotubes,applied to the electrode material of supercapacitors,are successfully prepared by a concise one⁃step electro⁃chemical method,which have excellent interface effectand hollow structure and show outstanding specificcapacitance of5.25F·cm-2at1mA·cm-2,remarkablecharge storage capacity and superior rate perfor⁃mance[28].In this work,CoNi2S4@NiS nanocomposites weresuccessfully synthesized by combining the hydrother⁃mal and electrodeposition methods.The synthesizedCoNi2S4@NiS electrode showed an excellent perfor⁃mance of1433F·g-1at1A·g-1,which is superior tothe CoNi2S4and NiS electrodes.Moreover,a flexiblesolid⁃state asymmetric supercapacitor CoNi2S4@NiS//rGO was assembled by CoNi2S4@NiS and reduced gra⁃phene oxide(rGO),which exhibits an outstanding elec⁃trochemical performance and has promising potentialfor application in supercapacitors.1Experimental1.1Synthesis of CoNi2S4on carbon fiber cloth(CoNi2S4@CC)The carbon fiber cloth(CC,1.0cm×2.0cm)was ultrasonically cleaned with0.5mol·L-1KMnO4for30min individually and then was washed with ethanol and deionized water for several times and desiccated in a vacuum oven at70℃for12h.The CoNi2S4was pre⁃pared by a hydrothermal reaction.0.291g Co(NO3)2·6H2O,0.237g NiCl2·6H2O,0.060g CO(NH2)2and 0.300g thioacetamide(TAA)were used as sources, respectively.Under the continuous magnetic stirring for30min,the above reagents were immersed in30 mL deionized water to get a uniform solution.Subse⁃quently,the uniform solution was transferred into50 mL Teflon⁃lined autoclave and the treated CC was immersed into the solution,then the autoclave was heated at180℃for24h.The final product was ultra⁃sonically rinsed with deionized water and ethanol, respectively.After dried at70℃for12h,the product was denoted as CoNi2S4@CC.1.2Synthesis of CoNi2S4@NiSThe NiS was synthesized by facile and effective three⁃electrode system electrodeposition.2.376g NiCl2·6H2O and7.612g CH4N2S were mixed in100 mL deionized water and stirred for30min to obtain a homogenous solution.Then,the electrodeposition pro⁃cess was conducted for5min at an invariable voltage of0.9V,while the CoNi2S4@CC was served as the work electrode.After that,the samples were washed with eth⁃anol and deionized water separately,and the products were dried in a vacuum environment at70℃.For com⁃parison,the pure NiS without CoNi2S4was also synthe⁃sized on the CC under the same procedure.1.3CharacterizationThe crystalline and structural of the synthesized samples were examined by X⁃ray diffraction(XRD) using Bruker D8Advance diffractometer with Cu Kαradiation(0.154nm)at40kV and30mA,and at a scan rate of6(°)·min-1in the2θrange from10°to80°. The microstructure of the samples was investigated using scanning microscopy(SEM)at5kV,transmis⁃sion electron microscopy(TEM)with an accelerating voltage of200kV,high⁃resolution transmission elec⁃tron microscopy(HRTEM)and selected area electron diffraction(SAED).X⁃ray photoelectron spectroscopy (XPS,1486.7eV)was used to observe the elemental analysis and chemical valence state of the lased irradi⁃172第1期ated samples.1.4Electrochemical measurementsThe electrochemical performance of the samplewas measured on an electrochemical workstation(CHI660E).Cyclic voltammetry (CV),galvanostaticcharge/discharge (GCD)and electrochemical imped⁃ance spectroscopy (EIS)were conducted as the mainpaths to exhibit the electrochemical behaviors.The electrochemical test was proceeded in a three⁃electro configuration in 2mol·L -1KOH electrolyte and the positive and the negative electrode were the as⁃sample and the Pt,the Hg/HgO serve as the reference elec⁃trode,respectively.The specific capacitance can be calculated from the GCD curves by the following equa⁃tion (1):C A =I Δtm ΔV(1)Where I (A)represents discharge current,m (g)repre⁃sents the accurate weight of the active material,Δt (s)represents the discharge time,and ΔV represents the potential window,respectively.1.5Fabrication and electrochemical measure⁃ments of asymmetric supercapacitorThe all⁃solid⁃state asymmetric hybrid supercapac⁃itor (ASC)device was assembled by using the CoNi 2S 4@CC as the positive electrode and rGO as the negativeelectrode,while the PVA⁃KOH gel (PVA=polyvinyl al⁃cohol)performed as the electrolyte.The positive andnegative electrode were dissolved in the PVA⁃KOH gel solution,then two electrodes were combined at roomtemperature and dry until the electrolyte is completely cured,and the solid⁃state supercapacitor was prepared.So as to obtain an ASC with excellent electrochemical properties,it is required to balance the relationship (q +=q -)of the two electrodes charge.As the stored charge of the electrode,the q can be calculated by theequation (2):q =Cm ΔV(2)where C (F·g -1)represents the specific capacitance,m(g)is the mass of the active material and ΔV (V)is the potential window.Meanwhile,the ideal mass ratio canbe calculated by the equation (3):m +m -=C -ΔV -C +ΔV +(3)Where,C +(F·g -1)and C -(F·g -1)represent the specificcapacitance of CoNi 2S 4@NiS and rGO electrode.ΔV +(V)and ΔV -(V)represent the voltage range of CoNi 2S 4@NiS and rGO electrode,respectively.The power den⁃sity (P ,W·kg -1)and the energy density (E ,Wh·kg -1)of CoNi 2S 4@NiS//rGO ASC device can be calculated bythe equations (4,5):E =12C (ΔV )2(4)P =E Δt(5)Where Δt (s)is the discharge time,ΔV (V)is the volt⁃age range and C (F·g -1)is the specific capacitance ofCoNi 2S 4@NiS//rGO ASC device.2Result and discussions2.1Structural and morphological characteriza⁃tionThe XRD patterns of NiS,CoNi 2S 4@CC and CoNi 2S 4@NiS composite are illustrated in Fig.1.TheXRD pattern of the NiS had the same diffraction peakswith the CoNi 2S 4@NiS at 2θ=30.31°,34.77°,46.08°and 53.58°,which can be attributed to the (100),(101),(102)and (110)planes of the NiS (PDF No.75⁃0613).The patterns of the CoNi 2S 4@CC and CoNi 2S 4@NiSshow the same peaks at 2θ=16.28°,26.82°,31.52°,38.30°,47.33°,50.29°and 55.22°,which are indexed to the (111),(220),(311),(400),(422),(511)and (440)planes of the CoNi 2S 4(PDF No.24⁃0334),respectively.In addition,the XRD patterns of the threesamples Fig.1XRD patterns of the NiS,CoNi 2S 4@CC and CoNi 2S 4@NiS何业增等:CoNi 2S 4上电沉积NiS 用于柔性固态非对称超级电容器173无机化学学报第37卷exhibited the extra diffraction peak at2θ=26°,which can be contributed to the carbon fiber cloth substrate (PDF No.26⁃1080).Moreover,there were no other im⁃purity peaks on the patterns,indicating that the suc⁃cessful synthesis of CoNi2S4@NiS on the carbon fiber cloth.The surface element analysis and chemical valence state of the CoNi2S4@NiS sample were further confirmed by XPS as plotted in Fig.2.Fig.2a exhibited the survey spectrum and revealed the presence of Ni, Co,S and C elements in the multiple materials.The Co2p XPS spectrum of the CoNi2S4@NiS is shown in Fig.2b.The peaks situated at779.78and795.15eV are attributed to the Co2p3/2and Co2p1/2levels of Co2+. The peaks situated at778.55and793.33eV reveal the Co2p3/2and Co2p1/2levels of Co3+.It proves that the coexistence of Co2+and Co3+in the CoNi2S4@NiS composite[29].The Ni2p spectrum is shown in Fig.2c, the diffraction peaks situated at853.45and872.38eV are attributed to Ni2+and the peak at856.16and 876.21eV are related to Ni3+[30].The S2p spectrum is displayed in Fig.2d,the diffraction peaks located at 162.98and161.68eV can be assigned to S2p1/2and S2p3/2[18].Moreover,the peak at169.13eV indicates that the existence of S⁃O[31].The morphology of NiS,CoNi2S4/CC and CoNi2S4 @NiS electrode materials can be observed in SEM im⁃ages(Fig.3).As exhibited in Fig.3a and3b,the Co⁃Ni2S4@CC presented a hexagonal flaky cubic structure and were tightly attached to the CC.Fig.3c and3d ex⁃hibit the morphology of the NiS,which presented a granular structure with a size of about50~200nm. These cross⁃linked nanoparticles would provide a high⁃er electrode/electrolyte active sites for reaction and a shorter ion diffusion way[32⁃33].The microstructure of the CoNi2S4@NiS is shown in Fig.3e and3f,the NiS nanoparticles were anchored onto the surface of Co⁃Ni2S4@NiS and form a dense film.The unique structure provides a large specific surface area,which enhance the active sites and would effectively enhance the spe⁃cific capacitance of composite materials.To better understand the chemical compositeand Fig.2(a)XPS survey spectrum of CoNi2S4@NiS;(b~d)XPS spectra of Co2p,Ni2p and S2p174第1期detailed structures of the synthesized CoNi2S4@NiS, HRTEM and element mapping analyses were conduct⁃ed.The HRTEM images of the CoNi2S4@NiS are shown in Fig.4a and4b.The interplanar spacing can be mea⁃sured to be0.20and0.28nm,which can be ascribe to the(102)lattice plane of NiS and(311)lattice plane of CoNi2S4,respectively.The consequences are match with the XRD and XPS tests.Fig.4c and4f displays the elemental mappings of the Co,Ni,Co/Ni and S in the CoNi2S4@NiS samples.The distribution area of the Ni element was slightly larger than the Co element.The Ni and Co element coexisted in the central regionof Fig.3SEM images of(a,b)CoNi2S4@CC,(c,d)NiS and(e,f)CoNi2S4@NiSFig.4(a,b)TEM images of CoNi2S4@NiS;(c~f)Element mappings of the Co,Ni,Co/Ni and S何业增等:CoNi2S4上电沉积NiS用于柔性固态非对称超级电容器175无机化学学报第37卷the sample,while in the outside of the sample there is only Ni element left.In consideration of that CoNi2S4 contained Ni and Co element while NiS had no Co ele⁃ment,it can be deduced that the outer layer of the com⁃posite is NiS which wraps the inner CoNi2S4.2.2Electrochemical performanceThe electrochemical performance of CoNi2S4@CC, NiS,and CoNi2S4@NiS electrodes were tested on a three ⁃electrode configuration with2mol·L-1KOH electro⁃lyte.Fig.5a shows the CV curves for CoNi2S4@CC,NiS, and CoNi2S4@NiS electrodes measured at a scan rate of 10mV·s-1.The CoNi2S4@NiS exhibited superior specif⁃ic capacitance and the redox peaks can be regard as the symbol of Faradaic feature.The improvement of the specific capacitance of the CoNi2S4@NiS is mainly con⁃tributed to the fact that the elements in the two sub⁃stances have multiple valence states,which can carry out the redox reaction more effectively[34].The CV curves of CoNi2S4@NiS electrode at different scan rates from10to50mV·s-1are shown in Fig.5b.The trend of the CV curves was basically maintained with the scan rate increasing,indicating the CoNi2S4@NiS electrode possess ideal pseudocapacitance characteristic and superior rate performance.The large deviation of the shape in large scan rate can be explained by the mis⁃match between charge transfer and diffusion.It can be observed that the cathode peak moved to a lower poten⁃tial,and meanwhile,the anode peak moved to ahigherFig.5Electrochemical performance of CoNi2S4,NiS and CoNi2S4@NiS:(a)CV curves of the CoNi2S4,NiS and CoNi2S4@NiS samples at a scan rate of10mV·s-1;(b)CV curves of the CoNi2S4@NiS sample at various scan rates;(c)GCD curvesof the CoNi2S4CC,NiS and CoNi2S4@NiS samples at a current density of1A·g-1;(d)GCD curves of the CoNi2S4@NiSat various current densities;(e)Comparison of specific capacitance;(f)EIS Nyquist plots of the CoNi2S4,NiS andCoNi2S4@NiS samples176第1期potential when the scan rate continued to increase, which can be explained by the polarization in different scan rates[35].As displayed in Fig.5c,the GCD curves of CoNi2S4@CC,NiS,and CoNi2S4@NiS electrode were measured at a current density of1A·g-1to confirm the advantage of the CoNi2S4@NiS.The discharge time of CoNi2S4@NiS was larger than NiS and CoNi2S4@CC, suggesting the composite structure is conducive to en⁃hance the specific paring to the NiS (1245F·g-1at1A·g-1)and CoNi2S4/CC(1165F·g-1 at1A·g-1),CoNi2S4@NiS(1433F·g-1at1A·g-1)ex⁃hibited higher specific capacitances.Fig.5d illustrates the GCD curves of CoNi2S4@NiS at different current densities to further investigate charge and discharge mechanism.It can be found that the curves show an apparent voltage platform,which is characteristic of typical pseudocapacitor behavior.The result can sup⁃plement the above conclusion.Moreover,the nonlinear curves of the GCD maintained the similarity and sym⁃metry indicating the good stability.The specific capaci⁃tances of NiS,CoNi2S4@CC and CoNi2S4@NiS calculat⁃ed are illustrated in Fig.5e.The specific capacitances of CoNi2S4@NiS were1433,1284,1248,1170,1073 and998F·g-1at1,2,3,5,8and10A·g-1,which possess better rate stability compared with the NiS and CoNi2S4@CC.The electrode cannot fully participate in the reaction when the current density increases,and the utilization rate of the electrochemically active mate⁃rial is insufficient,so the specific capacitance will decrease at a higher current density.As is shown in Fig.5f,the EIS curve of CoNi2S4@CC,NiS,and CoNi2S4 @NiS were fitted using the equivalent circuit model, where CPE is the constant phase angle original and Z W is the Warburg resistance.The equivalent series resis⁃tance(R s)value of NiS,CoNi2S4@CC and CoNi2S4@NiS were1.12,1.56and1.01Ω,indicating that the CoNi2S4 @CC electrode had the lowest internal impedance. Moreover,the value of charge transfer resistance(R ct) can be fitted to be0.25,1.62and0.56Ωfor the NiS, CoNi2S4@CC and CoNi2S4@NiS,suggesting that the CoNi2S4@CC electrode had much large R ct than that of the NiS and CoNi2S4@NiS electrode.Besides,the slope of the samples was greater than45°in the low frequen⁃cy region,indicating the ions and electrolyte are effec⁃tively diffused in the entire system,resulting in a re⁃duction in the diffusion resistance of the NiS,Co⁃Ni2S4@CC and CoNi2S4@NiS electrodes[36].A flexible solid⁃state asymmetric supercapacitor (ASC)device(CoNi2S4@NiS//rGO)was assembled to confirm the energy storage properties for practical ap⁃plication.Fig.6a is the CV curves of the CoNi2S4@NiS and rGO electrode under the three⁃electrode configura⁃tion at the scan rate of10mV·s-1.Obviously,the poten⁃tial windows of the positive and negative electrode were connected,indicating that the loss of potential is nonexistent.The CV curves of CoNi2S4@NiS//rGO at different scan rates(10~100mV·s-1)are displayed in Fig.6b.Significantly,the curves maintained the similar trend with the scan rate increase,and the polarization phenomenon was minimal even at the scan rate of100 mV·s-1,suggesting the device has excellent electro⁃chemical reversibility.Fig.6c exhibits the GCD curves of CoNi2S4@NiS//rGO at different current densities, which possessed good symmetry and had no obvious electrochemical reaction platform.Fig.6d exhibits an excellent specific capacitance of the CoNi2S4@NiS// rGO ASC(103.43F·g-1at1A·g-1and maintained 61.25F·g-1at10A·g-1),revealing excellent rate capa⁃bility.The EIS of the CoNi2S4@NiS//rGO ASC device is shown in Fig.6e.In the high⁃frequency region,the R s and R ct can be calculated to be1.019and4.89Ω.Fur⁃thermore,cycling performance is also a significant indi⁃cator to evaluate the practical application of superca⁃pacitor electrode materials.Fig.6f exhibits a superior cycle performance,which maintained78.7%after 10000cycles at10A·g-1.The superiority of specific capacitance and capacitance retention may be contrib⁃uted to the special nanostructure.The unique structure can provide large space for reaction between electrode and electrolyte by large interface which may supply more active sites.The energy and power density calculated to evalu⁃ated the properties of the CoNi2S4@NiS//rGO ASC device.Fig.7exhibits the Ragone plot of the CoNi2S4 @NiS//rGO ASC.The CoNi2S4@NiS//rGO ASC device exhibited a high energy density of36.6Wh·kg-1at800何业增等:CoNi2S4上电沉积NiS用于柔性固态非对称超级电容器177无机化学学报第37卷W·kg -1and the energy density maintained 21.7Wh·kg -1even at 8000W·kg -1.The CoNi 2S 4@NiS//rGOASC device have an advantage over some other report⁃ed devices,such as CoNi 2S 4//YS⁃CS (yolk⁃shell carbonspheres)(35Wh·kg -1at 640W·kg -1),Ni 3S 2/MWCNT(multiwalled carbon nanotube)⁃NC//AC (19.8Wh·kg -1at 798W·kg -1),NiCo 2S 4//rGO (16.6Wh·kg -1at 2348W·kg -1)and NiS/rGO//AC (18.7Wh·kg -1at 1240W·kg -1)[37⁃40].3ConclusionsIn conclusion,the CoNi 2S 4@NiS was successfullysynthesized by combining the hydrothermal and elec⁃trodeposition methods.The as⁃obtained samples exhib⁃ited an excellent specific capacitance (1433F·g -1at 1A·g -1)and superior rate performance (998F·g -1at 10A·g -1).The flexible solid⁃state asymmetricsupercapac⁃Fig.7Ragone plot of the ASC deviceFig.6Electrochemical measurements of the resultant CoNi 2S 4@NiS//rGO:(a)CV curves of the resultant CoNi 2S 4@NiSand rGO at 10mV·s -1;(b)CV curves of the device at different current densities;(c)GCD curves of the ASC device;(d)Specific capacitance at various current densities;(e)EIS Nyquist plots of the device;(f)Cycling performance ofthe device at 10A·g -1for 10000cycles178第1期itor assembled with CoNi2S4as the positive electrode and the reduced rGO as the negative electrode showed superior energy density of36.6Wh·kg-1at a power density of800W·kg-1,remarkable rate performance, and excellent cycle performance(78.7%at a high current density of10A·g-1after10000cycles).The results 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Storage Low Voltage Alternators - 4 pole 4954 使用指南
Low Voltage Alternators - 4 poleInstallation and maintenance2021.06 / e2Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -SAFETY MEASURESBefore using your machine for the first time, it is important to read the whole of this installation and maintenance manual.All necessary operations and interventions on this machine must be performed by a qualified technician.Our technical support service will be pleased to provide any additional information you may require.The various operations described in this manual are accompanied by recommenda-tions or symbols to alert the user to the po-tential risk of accidents. It is vital that you understand and take notice of the different warning symbols used.Warning symbol for an operation capable of damaging or destroying the machine or surrounding equipment.Warning symbol for general danger to personnel.Warning symbol for electrical danger to personnel.SAFETY INSTRUCTIONSAny personnel carrying out the procedures mentioned in this manual must wear personal protective equipment designed for mechanical andelectrical hazards.be p erformed u sing a pproved e quipment, and the alternator must be kept horizontal at all times. Before choosing a lifting tool, check the alternator’s dimensions by referring to the maintenance manual.WARNINGThe alternators must not be put into service until the machines in which they are to be incorporated have been declared compliant with Directives EC and plus any other directives that may be applicable.This manual is be given to the end user.The range of electric alternators and their derivatives, manufactured by us or on our behalf, comply with the technical requirements of the customs Union directives (EAC).© - We reserve the right to modify the characteristics of its products at any time in order to incorporate the latest technological developments. The informa-tion contained in this document may therefore be changed without notice.This document may not be reproduced in any form without prior authorization.All brands and models have been registered and patents applied for.This manual concerns the alternator which you have just purchased.We wish to draw your attention to the contents of this maintenance manual.2021.06 / e3Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -CONTENTS1 - PACKAGING AND PROTECTION OF MACHINES (4)1.1 - Description of packaging types (4)2 - TRANSPORT AND UNPACKING (4)2.1 - Checks on receipt .........................................................................................................42.2 - Checks during unpacking .. (4)3 - PROLONGED STORAGE (5)3.1 - Short-term indoor storage (- 2 months) .........................................................................53.2 - Short-term outdoor storage (- 2 months) ......................................................................53.3 - Long-term storage .. (5)4 - INSTALLATION (6)4.1 - Cleaning after long-term storage ..................................................................................64.2 - Electrical checks prior to start-up ..................................................................................64.3 - Mechanical checks . (6)Disposal and recycling instructionsDeclaration of EC compliance and incorporationAll maintenance and repair operations are to be carried out by personnel trained in the commissioning, servicing and maintenance of electrical and mechanical components so that all risk of accident is avoided and the alternator is maintained in its original state.In order for the manufacturer's warranty to remain in effect, all the preventative measures described in the packaging, storage and inspection instructions must be fully adheredto and implemented.2021.06 / e4Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -1 - PACKAGING AND PROTECTION OF MACHINES1.1 - Description of packaging typesThe different grades of packaging are described below. Check that the packaging grade used matches the order.Packaging Grade 1: Wooden base without protection.Packaging Grade 1.1: Wooden base + plastic cover + desiccant sachet.Packaging Grade 11: Cardboard packaging.Packaging Grade 11.1: Cardboard packaging + plastic cover + desiccant sachet.Packaging Grade 3: Open-slat crate. Packaging Grade 3.1: Open-slat crate +plastic cover + desiccant sachet.Packaging Grade 4.1: Shipping crate +plastic cover + desiccant sachet.Packaging Grade 5.1: Shipping crate +air-tight, vacuum-sealed aluminium foil.2 - TRANSPORT AND UNPACKING 2.1 - Checks on receiptWhen taking delivery of your alternator, check that it has not suffered any damage in transit. If there are any obvious signs of damage, inform the carrier of your concerns (you may be able to claim on their insurance) and, after looking the machine over carefully, check its general appearance and turn it over manually to find out whether or not it is functioning normally.The generously-sized lifting rings should only be used to move the alternator itself. The lifting hooks or handles used must fit the shape of these rings. Choose a lifting systemthat is suited to the alternator's environment.2.2 - Checks during unpackingBefore the machines are sent out, they are fitted with a device which immobilises the rotor to avoid any damage to the bearings. We recommend that this device is kept for use during any future transportation.After unpacking your machine, carry out a visual inspection. Do not remove the grease protecting the shaft end, the flange and the coupling disc. This protection must be left in place until installation is complete.Check all the information on the nameplate to see that is matches your order.2021.06 / e5Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -3 - PROLONGED STORAGE 3.1 - Short-term indoor storageIf the alternators are not unpacked immediately, the crates must be stored on a level surface and in a dry location that is free from dust, gas and corrosive substances. No other objects should be stacked on top of or against the sides of the crates. In order to avoid any damage to the bearings, the alternators should be stored in a place that is free from vibrations.The storage premises must:- Be closed and covered.- Be protected against humidity and against the presence of rodents and insects.- Be free from corrosive gases and exhaust fumes.- Be insulated against any continuous or intermittent vibrations.- Have a ventilation system fitted with a filter.- Have an ambient temperature of between: 5°C < t < 60°C, with no sudden temperature variations.- Have a relative air humidity of < 50%.- Be equipped with a fire detection system.- Have an electrical supply for space heaters3.2 - Short-term outdoor storageIf possible, choose a storage place that is dry and free from flooding and vibrations.Check for possible damage to the packaging before placing the equipment in storage, since this is the only way to make sure that storage conditions are appropriate.Position the machines on wooden pallets or on foundations to ensure that they are protected against humidity from the ground and to prevent the equipment from sinking into the ground. There must be enough room underneath the equipment for air to circulate freely.The sheeting used to protect the equipment from harsh weather conditions should not be allowed to touch its surfaces.3.3 - Long-term storageIn addition to the precautions described for short-term storage, it is recommended that the windings' insulation resistance is measured every three months, or that their insulation is checked using dieletric testing. In this case, it is essential that all the AVR wires are first disconnected.Under such circumstances, any damage caused to the AVR will not be covered by our warranty.See maintenance manual.Check the state of the painted surfaces every three months. If any traces of corrosion are found, remove them, and apply anticorrosive paint.Check the state of the anticorrosion coating on the machine-finished surfaces, shaft end, coupling discs and flange spigot every three months. If any traces of corrosion are found, remove them with a fine emery cloth, and apply a new layer of protective grease.If the machine is stored inside a wooden crate, check the ventilation openings. Make sure that no water, insects or pests can get inside the crate.NB: Prolonged standstill: To avoid these problems, we recommend the use of space heaters and turning the machine over manually from time to time to maintain it in good working order.It is essential that the space heater is connected whenever the temperature in the storage location is < 5°C and relative air humidity is > 50%.In these conditions the plastic film covering the machine should be removed, allowing the air to circulate around it freely.2021.06 / e6Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -4 - INSTALLATION4.1 - Cleaning after long-term storageThe inside and outside of the machine must be free from all traces of oil, water, dust and dirt.The inside of the alternator must be cleaned using low pressure compressed air.- Remove the anti-rust protection from the exposed surfaces using a cloth soaked in the petroleum-based solvent.Cleaning the machine using water or a high-pressure washer is strictly prohi-bited. Any problems arising from such treatment are not covered by ourwarranty.a cleaning station equipped with a vacuum system that is designed to collect and dispose of the products used.4.2 - Electrical checks before starting up the machine afterUnder no circumstances should an alternator, new or otherwise, be operated if the insulation is less than 1 megohm for the stator and 100,000 ohms for the other windings.There are several possible methods for restoring these minimum values.a) Dry out the machine for 24 hours in a drying oven at a temperature of approximately 110°C (without the AVR).b) Blow hot air into the air inlet, making sure that the machine is rotating in exciter field disconnected mode.c) Run in short-circuit mode (disconnect the AVR):- Short-circuit the three output power terminals using connections capable of supporting the rated current (try not to exceed 6 A/mm 2).- Insert a clamp ammeter to monitor the current passing through the short-circuit connections.- Connect a 48 Volt battery in series with a rheostat of approximately 10 ohms (50 W) to the exciter field terminals, respecting the polarity.- Open all the alternator openings fully.- Run the alternator at its rated speed, and adjust its level of excitation using the rheostat in order to obtain the rated output current in the short-circuit connections.Make sure that the alternator has the level of protection required for the environmental conditions specified.4.3 - Mechanical checksBefore starting the machine for the first time, check that:- A ll the bolts and screws have been properly tightened.- The cooling air is being drawn in freely.- The protective guards and housing are correctly positioned.- The direction of rotation matches that specified in the maintenance manual.- The winding connection matches the site operating voltage exactly (see maintenance manual).- In the case of regreasable bearings, it is recommended that the machine be regreased prior to initial start-up, then again once it has been running for several hours. The quality and amount of grease to be used can be found in the machine's maintenance manual.2021.06 / e7Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -Disposal and recycling instructionsWe are committed to limiting the environmental impact of our activity. We continuously monitor our production processes, material sourcing and product design to improve recyclability and minimise our environmental footprint.These instructions are for information purposes only. It is the user’s responsibility to comply with local legislation regarding product disposal and recycling.Recyclable materialsOur alternators are mainly constructed from iron, steel and copper materials, which can be reclaimed for recycling purposes.These materials can be reclaimed through a combination of manual dismantling, mechanical separation and melting processes. Our technical support depart-ment can provide detailed directions on how to dismantle products on request.Waste & hazardous materialsThe following components and materials require special treatment and must be separated from the alternator before the recycling process:- electronic materials found in the terminal box, including the automatic voltage regulator (198), current transformers (176), interference suppression module and other semi-conductors.- diode bridge (343) and surge suppressor (347), found on the alternator rotor.- major plastic components, such as the terminal box structure on some products. These components are usually marked with information concerning the type of plastic.All materials listed above need special treatment to separate waste from reclaimable materials and should be entrusted to specialist recycling companies.The oil and grease from the lubrication system should be treated as hazardous waste and must be treated in accordance with local legislation.Our alternators have a specified lifetime of 20 years. After this period, the operation of the product should be stopped, regardless of its condition. Any further operation after this period will be under the sole responsi-bility of the user.2021.06 / e8Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -2021.06 / e9Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -Moteurs Leroy-SomerSiege social : Boulevard Marcellin Leroy CS 10015 - 16915 Angoulême cedex 9 - France EC Declaration of compliance and incorporationThis Declaration applies to the generators designed to be incorporated into machines complying with the Machinery Directive Nr 2006/42/EC dated 17 May 2006.MOTEURS LEROY-SOMER J.P. CHARPENTIER Y. MESSINThe contractual EC Declaration of compliance and incorporation can be obtained from your contact on request.2021.06 / e10Electric Power Generation Installation and maintenanceStorageLow Voltage Alternators - 4 pole4954 en -Scan the code or go to: ***************************www.lrsm.co/support/company/leroy-somer/Leroy_Somer_en/LeroySomer.Nidec.en/LeroySomerOfficiel4954 en- 2021.06 / e。
FPGA可编程逻辑器件芯片XC2C256-7FTG256I中文规格书
Features•Optimized for 1.8V systems-As fast as 5.7 ns pin-to-pin delays-As low as 13 μA quiescent current•Industry’s best 0.18 micron CMOS CPLD-Optimized architecture for effective logic synthesis.Refer to the CoolRunner™-II family data sheet forarchitecture description.-Multi-voltage I/O operation — 1.5V to 3.3V •Available in multiple package options-100-pin VQFP with 80 user I/O-144-pin TQFP with 118 user I/O-132-ball CP (0.5mm) BGA with 106 user I/O-208-pin PQFP with 173 user I/O-256-ball FT (1.0mm) BGA with 184 user I/O-Pb-free available for all packages•Advanced system features-Fastest in system programming· 1.8V ISP using IEEE 1532 (JTAG) interface -IEEE1149.1 JTAG Boundary Scan Test-Optional Schmitt-trigger input (per pin)-Unsurpassed low power management·DataGATE enable (DGE) signal control -Two separate I/O banks-RealDigital 100% CMOS product term generation -Flexible clocking modes·Optional DualEDGE triggered registers·Clock divider (divide by 2,4,6,8,10,12,14,16)·CoolCLOCK-Global signal options with macrocell control·Multiple global clocks with phase selection permacrocell·Multiple global output enables·Global set/reset-Advanced design security-PLA architecture·Superior pinout retention·100% product term routability across functionblock-Open-drain output option for Wired-OR and LED drive-Optional bus-hold, 3-state or weak pull-up on selected I/O pins-Optional configurable grounds on unused I/Os-Mixed I/O voltages compatible with 1.5V, 1.8V,2.5V, and3.3V logic levels·SSTL2-1, SSTL3-1, and HSTL-1 I/O compatibility -Hot pluggable DescriptionThe CoolRunner™-II 256-macrocell device is designed for both high performance and low power applications. This lends power savings to high-end communication equipment and high speed to battery operated devices. Due to the low power stand-by and dynamic operation, overall system reli-ability is improvedThis device consists of sixteen Function Blocks inter-con-nected by a low power Advanced Interconnect Matrix (AIM). The AIM feeds 40 true and complement inputs to each Function Block. The Function Blocks consist of a 40 by 56 P-term PLA and 16 macrocells which contain numerous configuration bits that allow for combinational or registered modes of operation.Additionally, these registers can be globally reset or preset and configured as a D or T flip-flop or as a D latch. There are also multiple clock signals, both global and local product term types, configured on a per macrocell basis. Output pin configurations include slew rate limit, bus hold, pull-up, open drain and programmable grounds. A Schmitt-trigger input is available on a per input pin basis. In addition to stor-ing macrocell output states, the macrocell registers may be configured as "direct input" registers to store signals directly from input pins.Clocking is available on a global or Function Block basis. Three global clocks are available for all Function Blocks as a synchronous clock source. Macrocell registers can be individually configured to power up to the zero or one state.A global set/reset control line is also available to asynchro-nously set or reset selected registers during operation. Additional local clock, synchronous clock-enable, asynchro-nous set/reset and output enable signals can be formed using product terms on a per-macrocell or per-Function Block basis.A DualEDGE flip-flop feature is also available on a per mac-rocell basis. This feature allows high performance synchro-nous operation based on lower frequency clocking to help reduce the total power consumption of the device. Circuitry has also been included to divide one externally supplied global clock (GCK2) by eight different selections. This yields divide by even and odd clock frequencies.The use of the clock divide (division by 2) and DualEDGE flip-flop gives the resultant CoolCLOCK feature. DataGATE is a method to selectively disable inputs of theCPLD that are not of interest during certain points in time.XC2C256 CoolRunner-II CPLDAbsolute Maximum RatingsSymbol Description Value Units V CC Supply voltage relative to ground–0.5 to 2.0VV CCIO Supply voltage for output drivers–0.5 to 4.0V V JTAG(2)JTAG input voltage limits–0.5 to 4.0V V CCAUX JTAG input supply voltage–0.5 to 4.0VV IN(1)Input voltage relative to ground–0.5 to 4.0VV TS(1)Voltage applied to 3-state output–0.5 to 4.0V T STG(3)Storage Temperature (ambient)–65 to +150°C T J Junction Temperature+150°CXC2C256 CoolRunner-II CPLDPin Type VQ100CP132TQ144PQ208FT256 TCK48M106798P12TDI45M96394R11TDO83B9122176A10TMS47N106596N12V CCAUX (JTAG supplyvoltage)5D3811F4 Power internal (V CC)26, 57P1, K12, A21, 37, 841, 53, 124P3, K13, D12, D5Power Bank 1 I/O (V CCIO1)20, 38, 51J3, P7,G14, P1327, 55, 73, 9333, 59, 79, 92,105, 132J6, K6, L7, L8, J11,K11, L10, L9Power Bank 2 I/O (V CCIO2)88, 98A14, C4, A7109, 127, 14126, 133, 157,172, 181, 204 F7, F8, G6, H6, F10,F9, H11Ground 21, 25, 31,62, 69, 75,84, 100K2, N1, P4,N9, N12,J14, H14,E14, B14,A9, B329, 36, 47, 62,72, 89, 90, 99,108, 123, 14413, 24, 42, 52,68, 81, 93, 104,129, 130, 141,156, 177, 190,207F11, F6, G10, G7, G8,G9, H10, H7, H8, H9,J10, J7, J8, J9, K10,K7, K8, K9, L11, L6No connects----A1, C2, E6, D1, E1, G2,F1, G1, M4, T9, P9,M9, M10, T11, T12,T13, P11, T14, J16,K12, D16, G12, C15,D14, D6, C6, E7, C5 Total user I/O80106118173184Additional InformationAdditional information is available for the following CoolRunner-II topics:•XAPP784: Bulletproof CPLD Design Practices •XAPP375: Timing Model•XAPP376: Logic Engine•XAPP378: Advanced Features•XAPP382: I/O Characteristics•XAPP389: Powering CoolRunner-II•XAPP399: Assigning VREF Pins To access these and all application notes with their associ-ated reference designs, click the following link and scroll down the page until you find the document you want: CoolRunner-II Data Sheets and Application Notes Device PackagesRevision HistoryThe following table shows the revision history for this document.Date Version Revision05/09/02 1.0Initial Xilinx release.05/13/02 1.1Updated AC Electrical Characteristics and added new parameters.10/31/02 1.2Corrected package user I/O, added Voltage Referenced DC tables.03/17/03 2.0Added Characterization numbers for product release and device part marking04/02/03 2.1Updated T SOL max from 260 to 220. Changed I CCSB units from mA to μA.01/26/04 2.2Updated Device Part Marking. Updated links and Tsol.02/26/04 2.3Corrected Theta JC value on XC2C256-7TQ144.08/03/04 2.4Pb-free documentation08/19/04 2.5Changes to I CCSB maximum specifications in DC Electrical Characteristics table, on page 3.10/01/04 2.6Add Asynchronous Preset/Reset Pulse Width specification to AC Electrical Characteristics.03/07/05 2.7Removed -5 speed grade. Changes to Table 1, I/O Standards.06/28/05 2.8Move to Product Specification. Change to T IN25, T OUT25, T IN33, and T OUT33 for -7 speedgrade.03/20/06 2.9Add Warranty Disclaimer. Add note to Pin Description table that GTS, GSR and GCK pins canbe used for general purpose I/O.5/20/06 3.0Moved T CONFIG specification values from MIN column to MAX column, page 7.02/15/07 3.1Corrections to timing parameters t AOI, t PSUD, t PSU1, t PSU2, t PHD, t PCO, t POE, t PAO, t AO,t SUEC, t CW, t CDRSU, and f TOGGLE for -6 speed grade. Corrections to t PSUD, t CW, and t CDRSUfor the -7 speed grade. Values now match the software. There were no changes to siliconor characterization. Change to V IH specification for 2.5V and 1.8V LVCMOS.03/08/07 3.2Fixed typo in note for V IL for LVCMOS18; removed note for V IL for LVCMOS33.。
储能电源产品可靠性评测系统的能量回收技术
I G I T C W技术 分析Technology Analysis82DIGITCW2023.101 储能电源产品能量回收系统储能电源产品在充放电过程中都会产生一定程度的余电,如果这些余电不能得到有效的利用,会造成大量的资源浪费。
为了解决这个问题,本文所研究的储能电源产品能量回收系统,通过将余电进行存储和回收,可以实现对能源的最大化利用。
具体来说,当储能电源在放电过程中产生余电时,该系统会自动启动并将余电进行存储;当需要充电时,则可以通过该系统将存储在其中的余电释放出来进行充电。
2 储能电源产品能量回收系统运行方式储能电源产品的核心是其高效的能量存储和回收系统,通过对系统运行方式进行优化,可以实现更加高效、稳定和可靠的使用效果。
对于储能电源产品来说,不同的电池类型需要有不同系统控制方式,需要根据实际需求进行权衡。
充放电控制系统是保证储存和释放过程中稳定性和安全性的关键。
在充电过程中,需要根据电池类型和电池状态进行合理的充电控制,以避免过充或过放现象的发生。
在放电过程中,需要根据负载需求进行合理的放电控制,以确保储能电源产品能够稳定供电。
对于储能电源产品的能量回收系统,有以下几点需要注意。
首先,在回收过程中需要考虑系统内部损耗和外部环境因素对回收效率的影响。
其次,在回收后需要对能量进行储存,并在下一次使用时进行合理利用。
同时,还需要考虑系统运行效率与安全性之间的平衡问题。
储能电源产品可靠性评测系统的能量回收技术赵智星,郝红星,阳建平,范红彬,张常平(湖南炬神电子有限公司,湖南 郴州 423000)摘要:随着储能电源产品在各个领域的广泛应用,如何提高其可靠性成为了一个重要的问题。
而储能电源产品的能量回收技术则是解决这一问题的有效途径之一,通过该途径既可以实现能量的回收利用,又可以有效地降低能源的消耗和对环境污染。
不仅可以提高储能电源产品的可靠性,还能达到节约资源、保护环境、提高经济效益等多重目的。
GS1299 datasheet
GS1299General DescriptionThe GS1299 is a single-chip broadcast FM stereoradio tuner with fully integrated synthesizer, IFselectivity and MPX decoder. The tuner uses theCMOS process, require the least externalcomponent. The package size is SOP16 and iscompletely adjustment-free. All these make it verysuitable for portable devices.The GS1299 has a powerful low-IF digital audioprocessor, this make it have optimum sound qualitywith varying reception conditions.The GS1299 can be tuned to the worldwidefrequency band.1.1 Featuresl CMOS single-chip fully-integrated FM tunerl Low power consumptionØTotal current consumption lower than 17mA at 3.0V power supplyl Support worldwide frequency bandØ76-108 MHzl Default FrequencyØ107.9MHzl Fulll band seek timeØ< 5sl Autonomous search tuningl Support 32.768KHz crystal oscillatorl Digital auto gain control (AGC)l Volume controll Line-level analog output voltagel Directly support 32Ω resistance loadingl Integrated LDO regulatorØ 1.8 to 3.6 V operation voltage l SOP16 pin package1.2 Applicationsl Cellular handsetsl MP3, MP4 playersl Portable radiosl PDAs, NotebookFigure 1-1. GS1299 Top View SHEN ZHEN GUANGSHIMEI ELECTAONIC CO.,LTD2 Receiver CharacteristicsVDD = 1.8 to 3.6 V, T A = -25 to 85 °C, unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT General specificationsF in FM Input Frequency 76 108 MHz V rf Sensitivity1,2,3(S+N)/N=26dB 1.6 2 µV EMF αam AM Suppression1,2m=0.3 40 - - dBV AFL; V AFR Left and Right Audio Frequency Output Voltage(Pins LOUT and ROUT)200 mV(S+N)/N Maximum Signal Plus Noise to Noise Ratio1,2,3,558 60 - dB αSCS Stereo Channel Separation 35 - - dB THD Audio Total Harmonic Distortion1,3,60.05 0.1 % R L Audio Output Loading Resistance Single-ended 32 - - ΩI power up- - 20 mA I power down- - 10 µASHEN ZHEN GUANGSHIMEI ELECTAONIC CO.,LTD3 Pins DescriptionFigure 3-1. GS1299 Top ViewTable 3-1GS1299 Pins DescriptionSYMBOLPINDESCRIPTIONGND 2,3,5,11,14Ground. Connect to ground plane on PCB FM_IN 4 FM single inputRCLK 932.768KHz reference clock input VDD6,10 Power supplyLOUT,ROUT 12,13 Right/Left audio output SEEK-,SEEK+ 7,8 seek up,seek down VOL+,VOL- 15,16 Volume controlPN1Powerup/powerdown Enable12345678161514131211109Application Diagram4Table 4-3 Bill of Materials:COMPONENT VALUE DESCRIPTION SUPPLIER U1 GS1299Broadcast FM Radio Tuner GSJ1 Common 32Ω Resistance HeadphoneL1/C2 100nH/24pF LC Chock for LNA Input MurataC3,C4 125µF Audio AC Couple Capacitors MurataC1 24nF Power Supply Bypass Capacitor MurataC5 22nF MurataR1 10Kohm5 Package Physical DimensionFigure 5-1illustrates the package details for the GS1299. The package is lead-free and RoHS-compliant.SymbolDimensions In Millimeters Dimensions In InchesMin Max Min MaxA 1.350 1.750 0.053 0.069A1 0.100 0.250 0.004 0.010A2 1.350 1.550 0.053 0.061b 0.330 0.510 0.013 0.020c 0.170 0.250 0.007 0.010D 9.800 10.200 0.386 0.402E 3.800 4.000 0.150 0.157E1 5.800 6.200 0.228 0.244e 1.270(BSC) 0.050(BSC)Θ1。
Scalable
CLOCK CONTROL REGISTER
IP CORES WITHIN THE SOC
®
®
Voltage Scalable Touch Panel Interface
New touch panel interface addresses unique low power challenges of analog sensor interfaces
Low Power Challenges
− Isolating PLL from effects of VDD scaling − Enabling a wide range of input sources and output frequencies − Level shifting and duty cycle correction
− − −
Clock Freezing Hibernation Voltage Reduction
®
®
Voltage Scaling in CMOS
Reducing operating voltage greatly reduces active power in CMOS
Voltage Scaling Benefits
REF CLK Filtered Logic Supply 0.9V-1.95V REFERENCE And REGULATOR
Hazard Free System Clock Selection
MUX
Clocking Subsystem Features
– Low voltage, low power PLL to generate a high frequency clock – In-line self biasing regulator for dynamic VDD scaling – Fast dynamic frequency scaling without losing PLL lock – Hazard free system clock selection
X84256S8I-1.8资料
Preliminary256KMPS ™ EEPROMµPort Saver EEPROMFEATURES•Up to 10MHz data transfer rate •25ns Read Access Time•Direct Interface to Microprocessors and Microcontrollers—Eliminates I/O port requirements —No interface glue logic required—Eliminates need for parallel to serial converters •Low Power CMOS—2.5V–5.5V and 5V ±10% Versions —Standby Current Less than 1µA —Active Current Less than 3mA •Byte or Page Write Capable —64-Byte Page Write Mode•Typical Nonvolatile Write Cycle Time: 2ms •High Reliability—1,000,000 Endurance Cycles—Guaranteed Data Retention: 100 Years •Small Packages Options —8, 16-Lead SOIC Packages —14-Lead TSSOP Packages —8-Lead XBGA PackagesDESCRIPTIONThe µPort Saver memories need no serial ports or spe-cial hardware and connect to the processor memory bus.Replacing bytewide data memory , the µPort Saver uses bytewide memory control functions, takes a fraction of the board space and consumes much less power.Replacing serial memories, the µPort Saver provides all the serial benefits, such as low cost, low power, low volt-age, and small package size while releasing I/Os for more important uses.The µPort Saver memory outputs data within 25ns of an active read signal. This is less than the read access time of most hosts and provides “no-wait-state” operation.This prevents bottlenecks on the bus. With rates to 10MHz, the µPort Saver supplies data faster than required by most host read cycle specifications. This eliminates the need for software NOPs.The µPort Saver memories communicate over one line of the data bus using a sequence of standard bus read and write operations. This “bit serial” interface allows the µPort Saver to work well in 8-bit, 16 bit, 32-bit, and 64-bit systems.A Write Protect (WP) pin prevents inadvertent writes to the memory .Xicor EEPROMs are designed and tested for applica-tions requiring extended endurance. Inherent data reten-tion is greater than 100 years.X84256元器件交易网X84256PreliminaryPIN CONFIGURATIONSDrawings are to the same scale, actual package sizes are shown in inches:PIN NAMESPIN DESCRIPTIONSChip Enable (CE)The Chip Enable input must be LOW to enable all read/write operations. When CE is HIGH, the chip is dese-lected, the I/O pin is in the high impedance state, and unless a nonvolatile write operation is underway , the device is in the standby power mode.Output Enable (OE)The Output Enable input must be LOW to enable the out-put buffer and to read data from the device on the I/O line. Write Enable (WE)The Write Enable input must be LOW to write either data or command sequences to the device.Data In/Data Out (I/O)Data and command sequences are serially written to or serially read from the device through the I/O pin.Write Protect (WP)When the Write Protect input is LOW, nonvolatile writes to the device are disabled. When WP is HIGH, all functions,including nonvolatile writes, operate normally . If a nonvol-atile write cycle is in progress, WP going LOW will have no effect on the cycle already underway , but will inhibit any additional nonvolatile write cycles. DEVICE OPERATIONThe X84256 serial EEPROM is designed to interface directly with most microprocessor buses. Standard CE,OE, and WE signals control the read and write opera-tions, and a single l/O line is used to send and receive data and commands serially .16-LEAD SOICI/O NC V SS1234567NC OE WE1413121110NC V CC NC CE NC NC NC NC 8WP 91516NC I/O Data Input/Output CE Chip Enable Input OE Output Enable Input WE Write Enable Input WP Write Protect Input V CC Supply Voltage V SSGround NCNo Connect元器件交易网X84256PreliminaryData TimingData input on the l/O line is latched on the rising edge of either WE or CE, whichever occurs first. Data output on the l/O line is active whenever both OE and CE are LOW. Care should be taken to ensure that WE and OE are never both LOW while CE is LOW.Read SequenceA read sequence consists of sending a 16-bit address followed by the reading of data serially. The address is written by issuing 16 separate write cycles (WE and CE LOW, OE HIGH) to the part without a read cycle between the write cycles. The address is sent serially, most signifi-cant bit first, over the I/O line. Note that this sequence is fully static, with no special timing restrictions, and the processor is free to perform other tasks on the bus when-ever the device CE pin is HIGH. Once the 16 address bits are sent, a byte of data can be read on the I/O line by issuing 8 separate read cycles (OE and CE LOW, WE HIGH). At this point, writing a ‘1’ will terminate the read sequence and enter the low power standby state, other-wise the device will await further reads in the sequential read mode.Sequential ReadThe byte address is automatically incremented to the next higher address after each byte of data is read. The data stored in the memory at the next address can be read sequentially by continuing to issue read cycles. When the highest address in the array is reached, the address counter rolls over to address $0000 and reading may be continued indefinitely.Reset SequenceThe reset sequence resets the device and sets an inter-nal write enable latch. A reset sequence can be sent at any time by performing a read/write “0”/read operation (see Figs. 1 and 2). This breaks the multiple read or write cycle sequences that are normally used to read from or write to the part. The reset sequence can be used at any time to interrupt or end a sequential read or page load. As soon as the write “0” cycle is complete, the part is reset (unless a nonvolatile write cycle is in progress). The second read cycle in this sequence, and any further read cycles, will read a HIGH on the l/O pin until a valid read sequence (which includes the address) is issued. The reset sequence must be issued at the beginning of both read and write sequences to be sure the device initiates these operations properly.Write SequenceA nonvolatile write sequence consists of sending a reset sequence, a 16-bit address, up to 64 bytes of data, and then a special “start nonvolatile write cycle” command sequence.The reset sequence is issued first (as described in the Reset Sequence section) to set an internal write enable latch. The address is written serially by issuing 16 separate write cycles (WE and CE LOW, OE HIGH) to the part without any read cycles between the writes. The address is sent serially, most significant bit first, on the l/O pin. Up to 64 bytes of data are written by issuing a multiple of 8 write cycles. Again, no read cycles are allowed between writes.元器件交易网X84256PreliminaryThe nonvolatile write cycle is initiated by issuing a special read/write “1”/read sequence. The first read cycle ends the page load, then the write “1” followed by a read starts the nonvolatile write cycle. The device recognizes 64-byte pages (e.g., beginning at addresses XXXXXXXXX 000000 for X84256).When sending data to the part, attempts to exceed the upper address of the page will result in the address counter “wrapping-around” to the first address on the page, where data loading can continue. For this reason, sending more than 512 consecutive data bits will result in overwriting previous data.A nonvolatile write cycle will not start if a partial or incom-plete write sequence is issued. The internal write enable latch is reset when the nonvolatile write cycle is com-pleted and after an invalid write to prevent inadvertent writes. Note that this sequence is fully static, with no spe-cial timing restrictions. The processor is free to perform other tasks on the bus whenever the chip enable pin (CE) is HIGH.Nonvolatile Write StatusThe status of a nonvolatile write cycle can be determined at any time by simply reading the state of the l/O pin on the device. This pin is read when OE and CE are LOW and WE is HIGH. During a nonvolatile write cycle the l/O pin is LOW. When the nonvolatile write cycle is complete, the l/O pin goes HIGH. A reset sequence can also be issued during a nonvolatile write cycle with the same result: I/O is LOW as long as a nonvolatile write cycle is in progress, and l/O is HIGH when the nonvolatile write cycle is done.Low Power OperationThe device enters an idle state, which draws minimal current when:•an illegal sequence is entered. The following are the more common illegal sequences:—Read/Write/Write—any time—Read/Write ‘1’—When writing the address or writ-ing data.SYMBOL TABLEWAVEFORM INPUTS OUTPUTSMust be steady Will be steadyMa y change from LOW to HIGH Will change from LOW to HIGHMa y change from HIGH to LOW Will change from HIGH to LOWDon’t Care: Changes Allowed Changing: State Not KnownN/A Center Lineis HighImpedance 元器件交易网X84256Preliminary—Write ‘1’—when reading data—Read/Read/Write ‘1’—after data is written to device,but before entering the NV write sequence.—the device powers-up;—a nonvolatile write operation completes.While a sequential read is in progress, the device remains in an active state. This state draws more current than the idle state, but not as much as during a read itself. T o go back to the lowest power condition, an invalid condition is created by writing a ‘1’ after the last bit of a read operation. Write ProtectionThe following circuitry has been included to prevent inadvertent nonvolatile writes:—A special “start nonvolatile write” command sequence is required to start a nonvolatile write cycle. ABSOLUTE MAXIMUM RATINGS*T emperature under Bias......................–65°C to +135°C Storage T emperature...........................–65°C to +150°C T erminal Voltage withRespect to V SS .......................................–1V to +7V DC Output Current...................................................5mA Lead T emperature (Soldering, 10 seconds)..........300°CRECOMMENDED OPERATING CONDITIONS *COMMENTStresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci-fication is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Temperature Min.Max. Commercial 0°C +70°C Industrial –40°C +85°C Military†–55°C+125°CSupply VoltageLimits X842565V ± 10%X84256 – 2.5 2.5V to 5.5V X84256 – 1.81.8V to 3.6VD.C. OPERATING CHARACTERISTICS (V CC = 5V ± 10%)(Over the recommended operating conditions, unless otherwise specified.)Notes: (1)V IL Min. and V IH Max. are for reference only and are not tested.Symbol ParameterLimitsUnits Test ConditionsMin.Max. I CC1V CC Supply Current (Read)1mAOE = V IL , WE = V IH ,I/O = Open, CE clocking @ 10MHzI CC2 V CC Supply Current (Write)3mA I CC During Nonvolatile Write Cycle All Inputs at CMOS LevelsI SB1 V CC Standby Current 1 µ A CE = V CC , Other Inputs = V CC or V SS I LI Input Leakage Current 10 µ A V IN = V SS to V CC I LO Output Leakage Current 10µ A V OUT = V SS to V CCV lL (1) Input LOW Voltage –0.5V CC x 0.3V V IH (1) Input HIGH Voltage V CC x 0.7V CC + 0.5V V OL Output LOW Voltage 0.4V I OL = 2.1mA V OHOutput HIGH VoltageV CC – 0.8VI OH= –1mA元器件交易网X84256PreliminaryD.C. OPERATING CHARACTERISTICS (V CC = 2.5V to 5.5V)(Over the recommended operating conditions, unless otherwise specified.) D.C. OPERATING CHARACTERISTICS (V CC = 1.8V to 3.6V)(Over the recommended operating conditions, unless otherwise specified.) Notes: (1)V IL Min. and V IH Max. are for reference only and are not tested.Symbol ParameterLimits Units Test ConditionsMin.Max. I CC1V CC Supply Current (Read)1mA OE = V IL , WE = V IH ,I/O = Open, CE clocking @ 5MHz I CC2V CC Supply Current (Write)3mA I CC During Nonvolatile Write Cycle All Inputs at CMOS LevelsI SB1V CC Standby Current 1µA CE = V CC , Other Inputs = V CC or V SS I LI Input Leakage Current 10µA V IN = V SS to V CC I LO Output Leakage Current 10µA V OUT = V SS to V CCV lL (1)Input LOW Voltage –0.5V CC x 0.3V V IH (1)Input HIGH Voltage V CC x 0.7V CC + 0.5V V OL Output LOW Voltage 0.4V I OL = 1mA, V CC = 3V V OHOutput HIGH VoltageV CC – 0.4VI OH = –400µA, V CC = 3VSymbol ParameterLimits Units Test ConditionsMin.Max.I CC1V CC Supply Current (Read)500µA OE = V IL , WE = V IH ,I/O = Open, CE clocking @ 3MHz I CC2V CC Supply Current (Write)2mA I CC During Nonvolatile Write Cycle All Inputs at CMOS LevelsI SB1V CC Standby Current 1µA CE = V CC , Other Inputs = V CC or V SS I LI Input Leakage Current 10µA V IN = V SS to V CC I LO Output Leakage Current 10µA V OUT = V SS to V CCV lL (1)Input LOW Voltage –0.5V CC x 0.3V V IH (1)Input HIGH Voltage V CC x 0.7V CC + 0.5V V OL Output LOW Voltage 0.4V I OL = 0.5mA, V CC = 2V V OHOutput HIGH VoltageV CC – 0.2VI OH = –250µA, V CC = 2V元器件交易网CAPACITANCET A = +25°C, f = 1MHz, V CC = 5VNotes:(2)Periodically sampled, but not 100% tested.POWER-UP TIMINGNotes:(3)Time delays required from the time the V CC is stable until the specific operation can be initiated.Periodically sampled, but not 100% tested.A.C. CONDITIONS OF TEST EQUIVALENT A.C. LOAD CIRCUITSSymbol ParameterMax.Units Test ConditionsC I/O (2)Input/Output Capacitance 8pF V I/O = 0V C IN (2)Input Capacitance6pFV IN = 0VSymbolParameterMax.Units t PUR (3)Power-up to Read Operation 2ms t PUW (3)Power-up to Write Operation5msInput Pulse Levels V CC x 0.1 to V CC x 0.9Input Rise and Fall Times 5ns Input and Output Timing LevelsV CCx 0.5A.C. CHARACTERISTICS(Over the recommended operating conditions, unless otherwise specified.)Read Cycle Limits – X84256Notes:(4)Periodically sampled, but not 100% tested. t HZ and t OHZ first) to the time when I/O is no longer being driven into a 5pF load.SymbolParameterV CC = 5V±10%V CC = 2.5V – 5.5V V CC = 1.8V – 3.6V UnitsMin.MaxMin.Max.Min.Max.t RC Read Cycle Time 100200330ns t CE CE Access Time 255070ns t OE OE Access Time 255070ns t OEL OE Pulse Width 506090ns t OEH OE High Recovery Time 506090ns t LOW CE LOW Time 507090ns t HIGH CE HIGH Time50120180ns t LZ (4)CE LOW to Output In Low Z 000nst HZ (4)CE HIGH to Output In High Z 025030035ns t OLZ (4)OE LOW to Output In Low Z 000ns t OHZ (4)OE HIGH to Output In High Z 025030035ns t OHOutput Hold from CE or OE HIGH 000ns t WES WE HIGH Setup Time 252525ns t WEHWE HIGH Hold Time252525nsWrite Cycle Limits – X84256Notes:(5)t NVWC is the time from the falling edge of OE or CE (whichever occurs last) of the second read cycle in the “start nonvolatile write cycle”sequence until the self-timed, internal nonvolatile write cycle is completed.(6)Data is latched into the X84256 on the rising edge of CE or WE, whichever occurs first.(7)Periodically sampled, but not 100% tested.Symbol ParameterV CC = 5V ±10%V CC = 2.5V – 5.5V V CC = 1.8V – 3.6V Units Min.Max.Min.Max.Min.Max.t NVWC (5)Nonvolatile Write Cycle Time 555ms t WCWrite Cycle Time100200330nst WP WE Pulse Width254070ns t WPH WE HIGH Recovery Time 65150200ns t CS Write Setup Time 000ns t CH Write Hold Time 000ns t CP CE Pulse Width254070ns t CPH CE HIGH Recovery Time 65150200ns t OES OE HIGH Setup Time 252550ns t OEH OE HIGH Hold Time 252550ns t DS (6)Data Setup Time 122030ns t DH (6)Data Hold Time 555ns t WPSU (7)WP HIGH Setup 100100150ns t WPHD (7)WP HIGH Hold100100150nsCE Controlled Write CycleWE Controlled Write CyclePACKAGING INFORMATION8-LEAD XBGAX84256: Bottom ViewNOTE: ALL DIMENSIONS IN µMALL DIMENSIONS ARE TYPICAL VALUESPACKAGING INFORMATION8-LEAD PLASTIC SMALL OUTLINE GULL WING P ACKAGE TYPE SNOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)PIN 1 INDEX16-LEAD PLASTIC SMALL OUTLINE GULL WING P ACKAGE TYPE SNOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)0.0075 (0.19)0.010 (0.25)PACKAGING INFORMATIONNOTE:ALL DIMENSIONS IN INCHES (IN P ARENTHESES IN MILLIMETERS)14-LEAD PLASTIC, TSSOP, P ACKAGE TYPE V0° – 8ORDERING INFORMATIONDeviceX84256XXTemperature RangeBlank = Commercial = 0°C to +70°C I = Industrial = –40°C to +85°C–XV CC RangeBlank = 4.5V to 5.5V, 10 MHz 2.5 = 2.5V to 5.5V, 5 MHzMilitary = –55°C to +125°C (contact factory)Packages:X84256S8 = 8-Lead SOIC S16 = 16-Lead SOIC V14 = 14-Lead TSSOP Z = 8-Lead XBGA14-Lead TSSOP YWW 84256F = 2.5 to 5.5V, 0 to +70°CG = 2.5 to 5.5V, -40 to +85°C Blank = 4.5 to 5.5V, 0 to +70°C I = 4.5 to 5.5V, -40 to +85°C8-Lead SOIC X84256 XXXBlank = 8-Lead SOICF = 2.5 to 5.5V, 0 to +70°CG = 2.5 to 5.5V, -40 to +85°C Blank = 4.5 to 5.5V, 0 to +70°C I = 4.5 to 5.5V, -40 to +85°CLIMITED WARRANTYDevices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its T erms of Sale only. Xicor, Inc.makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice.Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents,licenses are implied.U.S. PATENTSXicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481;4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967;4,883, 976. Foreign patents and additional patents pending.LIFE RELATED POLICYIn situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prevent such an occurence.Xicor's products are not authorized for use in critical components in life support devices or systems.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.*PART MARK CONVENTION 8-Lead XBGAComplete Part Number Top Mark X84256Z–2.5X84256ZI–2.5XABA XABB1.8 = 1.8V to 3.6V, 3MHz (contact factory)。
不同海拔条件对低压成套开关设备温升的影响研究
不同海拔条件对低压成套开关设备温升的影响研究发布时间:2021-06-17T14:00:35.447Z 来源:《基层建设》2021年第7期作者:刘文娟吴炳卫董俊张林贾连华李林赵选国[导读] 摘要:随着国家深入实施西部大开发战略,西部地区的经济发展迅速,电力设备需求量剧增,大量的低压成套开关设备进入西部高原地区,G B/T 22580--2008《特殊环境条件低压成套开关设备和控制设备高原电气设备技术要求》中明确提出高原环境条件下,低压成套开关设备温升会增加。
昆明高海拔电器检测有限公司昆明电器科学研究所摘要:随着国家深入实施西部大开发战略,西部地区的经济发展迅速,电力设备需求量剧增,大量的低压成套开关设备进入西部高原地区,G B/T 22580--2008《特殊环境条件低压成套开关设备和控制设备高原电气设备技术要求》中明确提出高原环境条件下,低压成套开关设备温升会增加。
本文针对常规GCS低压成套开关设备进行不同海拔条件下温升研究,期望得到细化研究数据。
关键词:低压成套开关设备,海拔,温升Influence of different altitude conditions on temperature rise of low voltage switchgearLiuWenJuan WuBingWei , Dong Jun,Zhang Lin, Jia Lianhua, Li Lin,ZhaoXuanGuo,ShenZongCheng(Kunming High Altitude Electrical Testing Co., Ltd. Kunming Electrical Science Research Institute)Abstract:With the deep implementation of the western development strategy, the economy of the western region is developing rapidly, the demand for power equipment is increasing rapidly, and a large number of low-voltage switchgear sets have entered the western plateau,GB/T 22580--2008《Specific environmental condition - Technical requirements of electric equipments used for plateau - Low-voltage switchgear and controlgear assemblies》 clearly pointed out that the temperature rise of low-voltage switchgear will increase in plateau environment. In this paper, the temperature rise of GCs low-voltage switchgear at different altitudes is studied, expecting to get detailed research data.Key words:Low voltage switchgear, altitudes, temperature rise1 引言我国1000m及以上高原约占全国总面积26%,高原地区特殊环境条件对电气设备提出了更高技术性能要求,我国现行国家标准中对低压成套开关设备的正常使用条件做了规定,一般为海拔2000m及以下[1]。
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Low power storage for hierarchical graphs Erik Brockmeyer,Sven Wuytack,Arnout Vandecappelle,Francky CatthoorPartly sponsored by the Esprit ESD-LPD project25518:DAB-LPAlso professor at the Katholieke Univ.Leuven,BelgiumAbstractIn data dominated applications,like multi-media and telecom,data storage and transfers are the most important factors in terms of power,area and system performance.Several steps which optimize these costs are present in our systematic Data Trans-fer and Storage Exploration(DTSE)methodology. Here,we focus on the Storage Cycle Budget Distri-bution(SCBD),a step which is crucial for meeting the real-time constraints in typical multi-media and telecom applications.This paper proves the effectiveness of the devel-loped prototype tool on driver applications of sev-eral application domains.The derived cost informa-tion can be effectively used to trade off the cycles assigned to the different concurrent operating sys-tem tasks or between memory subsystem and to the processor data-path.1IntroductionIn data transfer and storage intensive applications, the memory accesses are often the limiting factor to the execution speed,both in custom“hardware”and instruction-set processors(“software”).Data pro-cessing can easily be sped up through pipelining and other forms of parallelism.Memory bandwidth,on the other hand,is a lot more expensive.Multi-port memories cause a large cost in area and power.Be-cause memory accesses are so important,it is even possible to make an initial system level performance evaluation based solely on the memory accesses to complex data types[3].Data processing is then tem-porarily ignored except for the fact that it introduces dependencies between memory accesses.Our Data Transfer&Storage Exploration(DTSE) [3]methodology allows to systematically optimize data-dominated applications for power and system bus load reduction.Here the“back-end”of DTSE is considered,which has the highest priority for tool support.It includes the Physical Memory Manage-ment(PMM)step.In contrast,the“front-end”steps in the script are mainly transformations which can still be done manually(but in a systematic way[6]). Physical memory management involves the design of a(partly)custom memory organization for an ap-plication.The memory organization must be as cost-efficient as possible,but on the other hand the per-formance must(just)meet the real-time constraints.We believe that thefirst step in physical mem-ory management should involve making the trade off between the cost of providing a certain amount of memory bandwidth,and the real-time constraints.The approach taken in our Storage Cycle Budget Distri-bution(SCBD)method is to partly order the memory accesses such that the maximally required memory bandwidth is minimized[7].This can be done by a (more)efficient use of the memory ports.The result of this SCBD step is a set of constraints for the mem-ory hierarchy.In our application domain,an over-all target storage cycle budget is typically imposed, corresponding to the overall throughput.In addition other real-time constraints can be present which re-strict the ordering freedom.To carefully evaluate the effect of the SCBD step, a detailed internal organization in each memory has to be decided.This objective is tackled in the mem-ory allocation and assignment step,for which a sys-tematic technique has been published in[6,2].2Related workIn the register allocation domain,the allocation techniques start from a fully scheduledflow graph and are scalar oriented[12].In the less explored do-main of memory allocation and assignment for hard-ware systems,the current techniques start from a given schedule[9],or performfirst a bandwidth estimation step[8]which is a kind of crude ordering that does not really optimize the conflict graph either.These techniques have to operate on groups of signals in-stead of on scalars to keep the complexity accept-able,e.g.,the stream model of Phideo[9]or the basic sets in the A TOMIUM environment[8].In the scheduling domain,the techniques for opti-mizing the number of resources given the cycle bud-get are of interest to us.Also here most techniques operate on the scalar-level,e.g.[10,13].The minor exceptions currently are the Phideo stream sched-uler[14]and the Notre-Dame rotation scheduler[11]. Many of these scalar techniques try to reduce the memory related cost by estimating the required num-ber of registers for a given schedule.Only few of them try to reduce the required memory bandwidth, which they do by minimizing the number of simul-taneous data accesses[13,14].They do not takeinto account which data is being accessed simulta-neously.Also no real effort is spent to optimize the data access conflict graphs such that subsequent reg-ister/memory allocation tasks can do a better job.The main difference between our SCBD and the related work discussed here is that we try to mini-mize the required memory bandwidth in advance by optimizing the access conflict graph for groups of scalars within a given cycle budget.We do this by putting ordering constraints on theflow graph,tak-ing into account which data accesses are being put in parallel(i.e.,will show up as a conflict in the access conflict graph).3Brief summary storage cycle budget distribution techniqueThe main goal of the approach is tofind which arrays must be stored in different memories in or-der to meet the cycle budget.Ordering the memory accesses within a certain number of memory cycles determines the required memory bandwidth.More-over,the data dependencies must be obeyed.If two memory accesses ordered in the same mem-ory cycle are in conflict,parallelism is required to perform both accesses.This can take the form of a multi-port memory,or,if two different arrays are be-ing accessed,multiple memories.Thus,the conflict incurs a certain cost.A tradeoff between the per-formance gain and the conflict related cost has to be made.On the one hand,every array in a separate memory is optimal for speed and seemingly also for power.On the other hand,having many memories is very costly for area,interconnect and complexity and due to the routing overhead also for power in the end. Due to the presence of the real time constraints and the complex control and data dependencies a diffi-cult tradeoff has to be decided.Therefore automatic tool support is crucial.The previous published technique[7,2]can only be directly used forflat Control Data Flow Graphs (CDFG),i.e.when no loops and no function calls are present.Loops could be unrolled and function calls could be inlined,but this destroys the hardware or code reuse possibilities present in the original speci-fication.Moreover,the ordering problem would ex-plode.Therefore,ordering the memory accesses has to be done in a hierarchical way.This is now solved in a new tool.Without going into more detail we will now present different practical tradeoff considerations and how to interpret the result.Moreover,in the following section two industrial driver applications will be pre-sented.4Tradeoff considerationsThe tool combination explores different solutions in the performance,power and area space.Indeed,every step of the SCBD generates a valid solution for a different cycle budget.Therefore it becomes possible to make the right tradeoff within this solu-tion space.Note that without the tool support de-scribed above,the type of tradeoffs discussed here were never achievable on real life applications.We believe that this is also thefirst time such graphs have been published.In case of a single thread and the memory sub-system being power dominant,the tradeoff can be based solely on the tool output.The given cycle budget defines a conflict graph which can be used for the memory allocation and assignment tool[2, 6].Obviously,the power and area cost will increase when the cycle budget is lowered.More bandwidth will be needed which will cause multi-port memo-ries(increase power)or more memories are needed (increase area).The performance-power function can be used to tradeoff cycles assigned to a task on the system level. Such a function can indeed be generated per task. Assigning too few cycles to a single task causes the entire application to perform poorly.The cycle and power estimates clearly helps the designer to assign tasks to processors and to distribute the cycles within the processors over the different tasks(see Figure1). Minimizing the overal power within a processor is possible by applying function minimization on all the power-cycle functions together.TASK1TASK2TASK3Processor 1 Processor 2Figure 1.Tradeoff cycles assignedtasks.Another tradeoff can be made when the data-path contribution is incorporated.The assignment of cy-cles to memory accesses and to the data-path is im-portant for the overall power consumption.A certain percentage of the overall time can be spent to mem-ory accesses and the remaining part to computational issues taking into account the system pipelining(see Figure2).The data-path cost versus performance is well known.When less cycles are available,more hardware is needed and more power is consumed (see dotted curve).Our tools provide the other half of the graph,the memory related cost(solid curve). Combining the two leads to a real optimized imple-mentation(dashed curve).0%20%40%60%80%100%Percentage of cycles to memory accesses0.00.20.40.60.81.0P o w e rMemory related power Data-path related power Total powerFigure 2.Tradeoff cycles assigned to memory accesses and data-path5Experimental SCBD resultsThe new prototype tool has been applied to drivers from multiple application domains to prove the ef-fectivness.The power numbers in this section are based on real memories.A Motorola library mem-ory model is used to estimate the on-chip memories (see [3]).For the off-chip components,we have used the EDO DRAM series of Siemens.5.1Synchro core of DABIn the near future mobile radios with Digital Au-dio Broadcast (DAB)reception will be produced.A DAB broadcaster is able to provide either 6high qual-ity radio programs with associated data,or for in-stance a MPEG 1video signal.DAB provides any combination of services up to a total of about 1.8Mb/s.DAB uses Orthogonal Frequency Division Multiplex (OFDM)modulation which is resistant against multi path interference and frequency-selective fading.Here,we will focus on the synchronization pro-cessor only [1].The synchronization is performed in two steps.In the first step a correlation to a know ref-erence signal determines the frequency error.Next,an IFFT is performed obtaining the channel impulse response.Figure 3shows the power curve representing the usefull tradeoff betweem cycle budget and power cost,from the fully sequential case down to the case close to the critical path.An equal graph can be made for the area cost.Note the discontinuities in the cost function when a dual ported memory is added.The rightmost point of the graph is the fully se-quential case.All arrays can be assigned to a single memory because no conflicts are available.How-ever,for power and area considerations four single-port memories are allocated.In case of multiple mem-ories,the signals are stored in smaller memories and less bitwaste due to bitwidth differences in the sig-nals.The cycle budget can be decreased downto 85kCycles without increasing the power nor the area.Note that the SCBD step generates more points in the graph but the MAA step could sustain an equally (good)memory hierarchy so the extra points are not usefull in the pareto curve.In order to reduce the budget below 85kCycles,dual-ported memories are needed.Allocation of 4dual-ported memories al-lows to decrease the cycle budget close to the critical path (55047cycles).The “front-end”DTSE optimization stages have been manually applied on the DAB application.As a result,the optimized implementation needs less mem-ories for the same cycle budget.The optimized im-plementation also consumes much less power.More-over,it can sustain this low power by a much lower cycle budget.It cannearly reach the critical path (45378cycles)without sacrificing memory power.To obtain the SCBD results,the tool execution time is in the order of several minutes.So it can easily be used to give feedback to the designer.100000150000Storage cycle budgetP o w erconstraint is put at52Kcycle.This exploration clearly shows the different solu-tions and design tradeoffs and is very useful for the system designer to allow a globally motivated dis-tribution of the timing constraints over the system modules.This indirectly also has a significant im-pact on overall power.5.2Binary tree predictive coderAnother illustration of the SCBD and MAA tools focusses on an industrial image processing applica-tion.Binary Tree Predictive Coding(BTPC)[5]is a lossless or lossy image compression algorithm based on multi-resolution.The image is successively split into a high-resolution image and a low-resolution quar-ter image,where the low-resolution image is split up further.The pixels in the high-resolution image are predicted based on patterns in the neighbouring pix-els.The remaining error is then expected to achieve high compression ratios with an adaptive Huffman coder.Six different Huffman coders are used,de-pending on the neighbourhood pattern.For lossy compression,the predictors are quantized before the Huffman coding.Figure4shows the structure of the considered algorithm.Only the most important parts,and the loop structure around them,are shown. The loop structure is manifest,but inside the loop bodies,many data-dependent conditionals are present. This shows that our approach can handle such heav-ily data-dependent code.Figure 4.Most important blocks andloop structure of the BTPC applicationFor a hardware implementation,some of the pa-rameters of the original(software)specification have to befixed.For example,the maximum input image size is set at pixels.Fixing these param-eters is necessary to be able to determine the sizes or the bitwidths of some of the arrays.For example,the size of the input image determines the size of three arrays containing image data(in total18Mbit),and it determines the bitwidth of the arrays gathering the Huffman statistics(in total80kbit,distributed over 16signals).The front-end steps of our overall DTSE metho-dology[3]are applied manually on this example and the back-end steps(using tools)give accurate feed-back about performance and cost.Figure5shows the relation between speed and power for the origi-nal,optimized and intermediate transformed specifi-cations.The off-chip signals are stored in separate memory components.Four memories are allocated for the on-chip signals.Every step leads to a sig-nificant performance improvement without increas-ing the system cost.For every description,the cycle budget can be traded for system cost.The original implementation needs28million cy-cles when executed fully sequentially.In principle, all the signals could be stored in one single mem-ory having one port.However,more memories will decrease the power consumption.The original de-scription can be sped up to18million cycles by cus-tomizing the memory architecture.The power over-head of this change is negligible due to an optimized ordering.Further cycle reduction forces a dual-ported off chip memory,introducing large costs(power,area, pin count).We cannot accurately estimate this part of the impact since no appropriate model is avail-able from vendors.A reasonable assumption is a power overhead of50%for a dual-ported memory. Using this assumption we can estimate the power in-crease for lower budgets.Adding this dual-ported off-chip memory dramatically increases the global power(see dotted part in Figure5).We didn’t redo this(useless)exercise for the other applied transfor-mations.By global loop merging,the access count is re-duced in the zero-tree generation.This has a positive effect on both cycle budget and power consumption. Moreover,this is an enabling transformation for the SCBD step.The more memory accesses in a basic block,the more ordering freedom available.Cycle budget (#Mcycles)Power(mW)4 on-chip memoriesFigure5.Power versus performance forBTPC example.The data reuse step[4]can be applied on two lev-els:firstly register level data reuse,secondly line buffer based.Here,the register level reuse decreases the number of accesses little.Not much data is reused on the average actually.The main benefit is the re-duction of the critical path in the worst case condi-tional branch(which is not executed very often)but has a large memory impact.The large predictingcondition trees cause a large cycle budget,and the worst case path had to be taken into account.By in-troducing the register reuse,all data dependent back-ground memory accesses can be removed,leading to a more manifest behaviour.The line buffer data reuse is not introduced in this step because it has a too negative impact on power.Basic group matching[6]has a big positive im-pact on the off-chip power.The signals and are nearly always accessed together(same time,same address).These two main signals are merged together,decreasing the off-chip memory count from three to two.Also some on-chip signals are merged. Though this has a large possible power impact,the minimal cycle budget is nearly unchanged.In the hierarchy assignment the data reuse copies are grouped into afinal memory hierarchy.The on-chip memories in this hierarchy can have multiple ports at a relatively low cost.For these performance reasons,we have added the line-based data-reuse level. Here,we were able to introduce multiple line based signals for which we could prevent dual-ported mem-ories.This transformation is not applied when the main emphasis is power.The power and performance exploration path do separated here.The power oriented path(without the memory hi-erarchy assignment)is given with dashed line in the graph.It does not reach the same cycle budget but the power remains low(the last18%performance gain costs28%in power).Of course it is a matter of constraints and tradeoffs which implementation is chosenfinally.In a last step,the code has been software pipelined. Data dependencies initially exclude optimal off-chip memory bandwidth usage.A certain timeslot can be blocked to be used efficiently.For instance when a loop body needs data from an on-chip memory be-fore writing to an off-chip memory then thefirst cy-cle of the loop body cannot be used for the off-chip access.By moving the memory accesses to a next or previous loop iteration,the dependency can be bro-ken.In total,a minimal cycle budget of6.5million cy-cles is achieved.The manual transformations have lead to a factor4performance improvement using the same power budget.This is the fastest achiev-able when having a single-ported off-chip memory (every memory cycle contains an off-chip access to the signal).6ConclusionsMemory bandwidth is the limiting factor for per-formance of current multi-media systems.More band-width becomes available by adding multiport or more memories.These extra memories involve extra costs. The Storage Cycle Budget Distribution tool optimizes the memory architecture within the real-time con-straint.The power,area and timing information ob-tained from the tool is very usefull especially at the system level.Clear tradeoffs can be made on the op-erating task level using these estimations.Moreover, on the lower level,the global time budget can be di-vided over the memory subsystem and the processor data-path.Visit our web-site and download a demo version of the tool:http://www.imec.be/acropolis/ References[1] E.Brockmeyer,J.D’Eer,N.Busa’, F.Catthoor,P.Lippens,J.Huiskens,“Code transformations for reduced data transfer and storage in low power realization of DAB synchro core”, Patmos’99,Kos,Greece,Oct6-8,1999.[2] F.Catthoor,S.Wuytack, E.De Greef, F.Franssen,L.Nachtergaele.H.De Man,“System-level transfor-mations for low power data transfer and storage”,in paper collection on“Low power CMOS design”(eds.A.Chandrakasan,R.Brodersen),IEEE Press,pp.609-618,1998.[3] F.Catthoor,S.Wuytack, E.De Greef, F.Balasa,L.Nachtergaele, A.Vandecappelle,“Custom Memory Management Methodology–Exploration of Memory Organisation for Embedded Multimedia System Design”, ISBN0-7923-8288-9,Kluwer Acad.Publ.,Boston,1998.[4]J.P.Diguet,S.Wuytack,F.Catthoor,H.De Man,“Formalizedmethodology for data reuse exploration in hierarchical mem-ory mappings”,Proc.IEEE Intnl.Symp.on Low Power De-sign,Monterey,pp.30-35,Aug.1997.[5]J.Robinson.Efficient general-purpose image compressionwith binary tree predictive coding.IEEE Transactions on Image Processing,6(4):601–608,Apr.1997.[6] A.Vandecappelle,M.Miranda, E.Brockmeyer F.Catthoor,D.Verkest,“Global Multimedia System Design Explorationusing Accurate Memory Organization Feedback”accepted for Proc.36th ACM/IEEE Design Automation Conf.,New Orleans LA,June1999.[7]S.Wuytack,F.Catthoor,G.De Jong,H.De Man,“Minimiz-ing the Required Memory Bandwidth in VLSI System Real-izations”,accepted for IEEE Trans.on VLSI Systems,V ol.7, No.,pp.,1999.[8] F.Balasa,F.Catthoor,H.De Man,“Dataflow-driven memoryallocation for multi-dimensional processing systems”,Pro-ceedings IEEE International Conference on Computer Aided Design,San Jose CA,Nov.1994.[9]P.Lippens,J.van Meerbergen,W.Verhaegh,A.van der Werf,“Allocation of Multiport Memories for Hierarchical Data Streams”,Proceedings IEEE International Conference on Computer-Aided Design,pp.728-735,Santa Clara,Nov.1993.[10]P.Paulin,J.Knight,“Force-directed scheduling for the be-havioral synthesis of ASIC’s”,IEEE Transactions on Computer-Aided Design,V ol.8,No.6,pp.661-679,June 1989.[11]N.Passos,E.Sha,“Push-up scheduling:optimal polynomial-time resource constrained scheduling for multi-dimensional applications”,Proceedings IEEE International Conference on Computer-Aided Design,San Jose CA,pp.588-591,Nov.1995.[12]L.Stok,“Data path synthesis”,INTEGRATION,the VLSIjournal,V ol.18,pp.1-71,June1994.[13]W.Verhaegh,P.Lippens,E.Aarts,J.Korst,J.van Meerbergen,A.van der Werf,“Improved Force-Directed Scheduling inHigh-Throughput Digital Signal Processing”,IEEE Trans-actions on CAD and Systems,V ol.14,No.8,Aug.1995. 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