高性能电子产品说明书

050-7272 R e v A 10-2004

MAXIMUM RATINGS

All Ratings: T C = 25°C unless otherwise specified.

Power MOS V ® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V ®also achieves faster switching speeds through optimized gate layout.

•Faster Switching •Avalanche Energy Rated •Lower Leakage

•TO-247 or Surface Mount D 3Pak

•Fast Recovery Body Diode

APT4014BVFR APT4014SVFR

400V

28A

0.140Ω

POWER MOS V

®

DYNAMIC CHARACTERISTICS

APT4014BVFR_SVFR

050-7272 R e v A 10-2004

Z θ

J C , T H E R M A L I M P E D A N C E (°C /W )10-5

10-4

10-310-210-1 1.010RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.10.05

0.010.005

0.001

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions Continuous Source Current (Body Diode)Pulsed Source Current 1 (Body Diode)Diode Forward Voltage 2 (V GS = 0V, I S = -28A)Peak Diode Recovery dv /dt 5Reverse Recovery Time (I S = -28A, di /dt = 100A/µs)Reverse Recovery Charge (I S = -28A, di /dt = 100A/µs)Peak Recovery Current (I S = -28A, di /dt = 100A/µs)

Symbol I S I SM V SD

dv /dt

t rr Q rr I RRM

UNIT Amps Volts V/ns ns µC Amps

Symbol C iss C oss C rss Q g Q gs Q gd t d (on)t r t d (off)t f

Characteristic Input Capacitance Output Capacitance

Reverse Transfer Capacitance Total Gate Charge 3Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time

Turn-off Delay Time Fall Time

Test Conditions

V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 200V I D = 28A @ 25°C V GS = 15V V DD = 200V I D = 28A @ 25°C R G = 1.6Ω

MIN

TYP

MAX

360056023016020701210478

UNIT pF

nC

ns MIN TYP MAX 281121.315T j = 25°C 250T j = 125°C 500

T j = 25°C 1.3T j = 125°C 4.5T j = 25°C 12T j = 125°C

18

THERMAL CHARACTERISTICS

Symbol R θJC R θJA

MIN

TYP

MAX

0.4240

UNIT °C/W

Characteristic Junction to Case Junction to Ambient

1Repetitive Rating: Pulse width limited by maximum junction

3See MIL-STD-750 Method 3471

temperature.4Starting T j = +25°C, L = 3.32mH, R G = 25Ω, Peak I L

= 28A 2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%5dv /dt

numbers reflect the limitations of the test circuit rather than the

device itself. I S ≤ -I D [Cont.]

di /dt ≤ 700A/µs V R ≤ V DSS

T J ≤ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.