负光度系数的光敏电阻

负光度系数的光敏电阻
英文回答：
Negative photoconductivity is a phenomenon exhibited by certain photoresistors whereby their resistance decreases upon exposure to light. This is in contrast to positive photoconductivity, where the resistance increases with
light exposure. The change in resistance is due to the generation of electron-hole pairs in the semiconductor material of the photoresistor upon absorption of light. These charge carriers increase the conductivity of the material, thereby reducing its resistance.
Negative photoconductivity is commonly observed in photoresistors made from materials such as cadmium sulfide (CdS), cadmium selenide (CdSe), and lead sulfide (PbS). These materials have a relatively large bandgap, which means that they require a significant amount of energy to generate electron-hole pairs. When light with sufficient energy is incident on the photoresistor, electron-hole
pairs are generated and the resistance of the material decreases.
Negative photoconductivity can be used to create light-sensitive devices such as photodiodes, phototransistors,
and photomultipliers. These devices can be used to detect and measure light intensity, and are commonly employed in applications such as photography, spectroscopy, and optical communications.
中文回答：
负光度系数的光敏电阻是指受到光照后电阻率下降的光敏电阻。

这与正光度系数的光敏电阻相反，正光度系数的光敏电阻在受到光
照后电阻率会上升。

电阻率的变化是由于光敏电阻的半导体材料在
吸收光后产生了电子-空穴对。

这些电荷载流子增加了材料的电导率，从而降低了其电阻率。

在由硫化镉 (CdS)、硒化镉 (CdSe) 和硫化铅 (PbS) 等材料制
成的光敏电阻中，通常会观察到负光度系数。

这些材料具有较大的
带隙，这意味着它们需要大量的能量才能产生电子-空穴对。

当足够
能量的光照射到光敏电阻上时，就会产生电子-空穴对，并且材料的
电阻率会下降。

负光度系数可用于制造光敏器件，例如光电二极管、光电晶体管和光电倍增管。

这些器件可用于检测和测量光强，并且通常用于摄影、光谱学和光通信等应用中。