Sensors and Actuators.2012.862.Fluorescent probe of Cu.
sensors and actuators b-chemical模板 -回复
sensors and actuators b-chemical模板-回复sensors and actuators in chemical industryIntroduction:In the chemical industry, the use of sensors and actuators plays a crucial role in maintaining efficient operations, ensuring product quality, and enhancing safety measures. Sensors are devices that detect changes in the environment and convert them into an electrical signal, while actuators are mechanisms that control or manipulate physical systems. Together, these two technologies form a fundamental part of process control, enabling automation and optimization in chemical manufacturing. In this article, we will explore the various types of sensors and actuators used in the chemical industry and delve into their applications.1. Sensors in the chemical industry:1.1 Temperature sensors:Temperature sensors are widely used in chemical facilities to monitor and control reaction temperatures. They help to ensure that reactions occur at the desired temperature range to achieveoptimum product yields and reduce the risk of unwanted side reactions. Additionally, temperature sensors aid in maintaining safe operating conditions by triggering alarms and shutdown mechanisms when temperatures exceed predefined limits.1.2 Pressure sensors:Pressure sensors are critical in the chemical industry for maintaining optimal operating conditions and ensuring safety. They help monitor and control pressure levels in storage tanks, pipelines, and reactors. By providing real-time pressure data, these sensors enable operators to take corrective actions promptly, preventing overpressure situations that could lead to equipment failure or even catastrophic incidents.1.3 Flow sensors:Flow sensors are utilized to monitor and regulate the flow rate of liquids or gases during chemical processes. Accurate measurement of flow rates is crucial for maintaining product quality and controlling production volumes. Flow sensors also play a vital role in detecting leaks or blockages in pipelines, preventing potential safety hazards and minimizing product losses.1.4 Level sensors:Level sensors are employed to monitor and control the liquid or solid levels in tanks, vessels, and reactors. They help prevent overflow or underflow situations, ensuring consistent process conditions and preventing environmental pollution. Level sensors also aid in inventory management, enabling timely replenishment of raw materials and avoiding production disruptions.2. Actuators in the chemical industry:2.1 Control valves:Control valves are one of the most commonly used actuators in the chemical industry. They regulate the flow rate, pressure, and temperature of fluids within a system. By responding to signals from sensors or control systems, valves modulate the flow of liquids or gases, allowing precise control over process variables. This enables operators to maintain desired conditions, optimize energy consumption, and ensure product quality.2.2 Motorized valves:Motorized valves are employed to control the opening and closing of fluid passages in chemical plants. They are typically used inlarger pipelines or critical systems where manual valve operation may be impractical or unsafe. Motorized valves can be operated remotely, enhancing operational flexibility and enabling rapid response in emergency situations.2.3 Solenoid valves:Solenoid valves are extensively used in the chemical industry for their fast response time and precise control capabilities. These valves use electromagnetic force to open or close fluid passages, making them ideal for applications that require quick and accurate fluid flow control. Solenoid valves are commonly used in automated systems and are invaluable for process optimization, energy efficiency, and safety enhancement.2.4 Pumps and motors:Pumps and motors are critical actuators used in the chemical industry to move fluids within a process. They provide the necessary pressure and flow required for various operations, such as transferring fluids between vessels, circulating cooling or heating media, and mixing reagents. Efficient and reliable pumps and motors are crucial for maintaining process stability, ensuring product consistency, and minimizing energy consumption.Conclusion:Sensors and actuators are essential components in the chemical industry, enabling efficient and safe operations. They play a vital role in monitoring and controlling process variables, optimizing energy consumption, and ensuring product quality. By providing real-time data and enabling precise control, sensors and actuators contribute to increased productivity, reduced waste, and enhanced safety measures. As technology advances, the application of sensors and actuators in the chemical industry will continue to evolve, revolutionizing manufacturing processes and driving innovation in the field.。
传感器技术论文中英文对照资料外文翻译文献
传感器技术论文中英文对照资料外文翻译文献Development of New Sensor TechnologiesSensors are devices that can convert physical。
chemical。
logical quantities。
etc。
into electrical signals。
The output signals can take different forms。
such as voltage。
current。
frequency。
pulse。
etc。
and can meet the requirements of n n。
processing。
recording。
display。
and control。
They are indispensable components in automatic n systems and automatic control systems。
If computers are compared to brains。
then sensors are like the five senses。
Sensors can correctly sense the measured quantity and convert it into a corresponding output。
playing a decisive role in the quality of the system。
The higher the degree of n。
the higher the requirements for sensors。
In today's n age。
the n industry includes three parts: sensing technology。
n technology。
and computer technology。
Sensors and Actuators B Chemical
Sensors and Actuators B 140(2009)342–348Contents lists available at ScienceDirectSensors and Actuators B:Chemicalj o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /s nbCharacterization of a multi-chip microelectrofluidic bench for modular fluidic and electric interconnectionsSunghwan Chang 1,Sang Do Suk,Young-Ho Cho ∗Digital Nanolocomotion Center,Korea Advanced Institute of Science and Technology,373-1Guseong-dong,Yuseong-gu,Daejeon 305-701,Republic of Koreaa r t i c l e i n f o Article history:Received 1November 2006Received in revised form 11January 2009Accepted 16January 2009Available online 28May 2009Keywords:Microelectrofluidic bench Multi-chip systemMicroelectrofluidic modules Electrofluidic interconnectionLow-pressure-loss interconnection Low-temperature interconnectiona b s t r a c tWe present the design,fabrication,and characterization of a multi-chip microelectrofluidic bench,achiev-ing both fluidic and electric interconnections with simple and low pressure-loss interconnections.The microelectrofluidic bench provides easy alignment of fluidic interconnection using microfabricated annu-lar fluidic connectors;also provides simple electric interconnection using isotropic conductive adhesives at room temperature.Thus,the present microelectrofluidic bench provides a modular concept for fluidic and electric interconnection.In experimental study,we characterize pressure losses,electric resistances loss,and pressure stability of the interconnection.The average pressure drop per each fluidic contact is measured 0.12±0.19kPa at the DI water flow rate from 10to 100l min −1.The electric resistance per each electric contact is measured as 0.64±0.29 .The fluidic interconnection endures maximum pressure of 115±11kPa.The present microelectrofluidic bench,therefore,offers a simple and low pressure-loss electrofluidic modular interconnection for electrofluidic multi-chip microsystems.©2009Published by Elsevier B.V.1.IntroductionA significant amount of research has been devoted to the development of microfluidics and MEMS (Microelectromechanical Systems)over the past pared with numerous func-tional microelectrofluidic devices [1],few approaches on interfaces and interconnections [2–5]among devices have been reported for integration of microsystems.Interconnection method is often ignored in research environments such as academic laboratories,because skilled personnel operate systems.However,it must be addressed prior to commercial success of any microfluidic appli-cations where manual manipulation is not economical and the macro-to-micro interface must be developed [6].Recent microfluidic systems require multi-physical interfaces including not only fluidic interconnection but also electric inter-connection.However,most of previous interconnection methods in microfluidics focus on fluidic interconnections [2–4].Previous interconnection methods for multi-chip systems have included flu-idic interconnection:anodic bonding [2],o-ring tubing [3],and mechanical interlocking [4].In these methods,high temperature [2]of 400◦C,relatively big waste volume [3]of 30l,and hard alignment of interconnected devices [4]become a bottleneck of∗Corresponding author.Tel.:+82423508691;fax:+82423508690.E-mail address:nanosys@kaist.ac.kr (Y.-H.Cho).1Current Address:Nano-Mechanical Systems Research Division,Korea Institute of Machinery &Materials (KIMM),Republic of Korea.simple interconnection.Additionally,thermofluidic or biochemi-cal multi-chip microsystems of nowadays require also electrical interconnections.Recently,Yang and Maeda have suggested socket-type electric interconnections [6]with fluidic interconnections;however,they used silicon tubes for fluidic interconnections,so more wastes of sample fluids occurred in fluidic interconnections than previous work [2–4]which has wastes of samples about 5–30l.Compared to integrated single-chip microsystems,intercon-nected multi-chip systems [7],composed of several chips,have problems of assembly and interconnection,while permitting a vari-ety of materials and process alternatives.Therefore,we propose a microelectrofluidic bench to achieve simple,low pressure-loss,low-temperature electrofluidic interconnection for interconnected multi-chip systems.The microelectrofluidic bench provides easy alignment of fluidic interconnections using microfabricated annu-lar fluidic connectors;also provides simple electric interconnection using isotropic conductive adhesives (ICA)[8]at room tempera-ture.Thus,compared to previous interconnection methods [2–6],the present microelectrofluidic bench can provide easier fluidic and electric interconnections as a modular concept.2.Design and fabrication2.1.DesignFig.1shows a perspective view of a prototype bench for a four-device interconnection,which offers two pairs of fluidic I/O0925-4005/$–see front matter ©2009Published by Elsevier B.V.doi:10.1016/j.snb.2009.01.075S.Chang et al./Sensors and Actuators B 140(2009)342–348343Fig.1.A perspective view of the prototype microelectrofluidic bench composed of three layers for fluidic and electric interconnections.(input/output)ports and three electric I/O pads for each con-nected device.The prototype bench is composed of the electric interconnection layer,fluidic contact layer,and fluidic channel layer.Microelectrofluidic devices such as micropumps,micromix-ers,detectors,and so on,which have electrofluidic interfaces below two fluidic I/O ports and three electric I/O pads,can be intercon-nected to the bench with fluidic and electric interconnections as a microelectrofluidic module (Fig.2).In order to branch out fluidic inlets/outlets and electric inputs/outputs,we should accommodate them either in the device or in the bench.If devices interconnect to the bench as shown in Fig.3,fluidic interconnections can be achieved by plasma treatment bonding [9–11];electric interconnections are achieved by isotropic con-ductive adhesives (ICA)filling in the gap between electric pads of the bench and a device.We select PDMS (polydimethylsilox-ane)as structure materials of the bench,because PDMS is easily bonded with glass and other polymers after O 2plasma treatment.The prototype bench is composed of three layers (Fig.1):the electric interconnection layer;the fluidic contact layer;the fluidic channel layer.For realization of fluidic and electric interconnection shown in Fig.3,it is important to find compatibility with previous electroflu-idic devices in terms of size,material,and shape.In addition,fluidic and electric loss in interconnection should be considered by select-ing fluidic channel dimensions as well as electrical pad size and the gap thickness between electric pads of the bench and a device.The dimension and the layout of each layer are listed in Fig.4.Thus,in this bench,interconnected electrofluidic devices should be standardized in the fluidic I/O and electric I/O with the bencharchi-Fig.2.Fluidic and electric interconnections of four devices using the microelec-trofluidicbench.Fig.3.Fluidic and electric interconnection at the cross-section,A–A ,of Fig.2:(a)cross-sectional view of the A–A before interconnection;(b)cross-sectional view of the A–A after interconnection.tecture in Fig.4.In the electric interconnection layer (Fig.4(a)),there are three electric connectors for each device.Two electric connec-tors are commonly connected to two electric pads.The last electric connector is connected to independent electric monly connected two electrical I/O interfaces can be used for voltage sources for electrofluidic chips;last one can be used for additional electric signal inputs for optional uses.The fluidic contact layer (Fig.4(b))has the microfabricated annular fluidic connectors which enable easy alignment between a device and the bench for bond-ing.In this fluidic connector,volume of wasting sample fluid is calculated as 3.14l,which is reasonable considering previous flu-idic interconnection methods [2–4]which have wastes of samples about 5–30l.In the fluidic channel layer (Fig.4(c)),there are three kinds of channels:4mm-length (S1),8mm-length (S2),and 24mm-length (E1and E2).S1and S2are straight channels;E1and E2are curved channels which have two elbows and four elbows,respec-tively.It is important to match the pressure drops between couples of channels:S1–S1,S2–S2,and E1–E2for equivalent transport of samples.In the case of the S1–S1,S2–S2pairs,it is obvious to match the pressure drops of channel couples due to same dimensions;however,in the case of the E1–E2pair,we should consider minor loss due to elbow effect.Thus,we choose dimensions of the E1and E2to have 24mm-equiv.lengths by setting radius of curvature to be three times [12]to the width of the channel.Fig.5shows a reference device as an example of interconnected devices.For interconnection using the prototype bench,the location of fluidic I/O ports and electric I/O pads in real devices should follow the location of the fluidic input ports,fluidic out ports,and electric connectors in Fig.5.The outer diameters of the fluidic connectors in the prototype bench are designed about 1.5mm (Fig.4(b));thus,it is recommended that we design fluidic I/O ports of interconnected devices to be larger than 1.5mm.The alignment between the micro-electrofluidic bench and the reference device is achieved by the fluidic connectors.It is possible to align the bench and devices by close-fitting without help of microscopes because the heights and outer diameters of the fluidic connectors in the bench are about 500m and 1.5mm (Fig.4(b)),respectively.344S.Chang et al./Sensors and Actuators B140(2009)342–348youts and dimensions of the three layers in Fig.1:(a)the electric intercon-nection layer;(b)thefluidic contact layer;(c)thefluidic channel layer.2.2.FabricationFabrication processes for the prototype bench are described in Fig.6(a).We make the bench by assembling the electric intercon-nection layer,fluidic contact layer,andfluidic channel layer.The electric interconnection layer is fabricated by patterning Cr/Au on polycarbonate(PC)substrate.The windows in Fig.4(a)are punched out by a plastic cutter.Thefluidic contact layer is fabricated by PDMS molding process[9,10].After two-step lithography with SU-8100,negative photoresist,on silicon substrate and development, we make the mold of thefluidic interconnection layer.Theflu-idic channel layer is also fabricated by PDMS molding process.AFig.5.Bottom view of the reference device.100m-thick SU-8patterned silicon substrate is used as a mold of thefluidic channel layer.In Fig.6(b),there is fabrication process of a reference device,which is an imitation of microelectrofluidic modules such as micropumps,micromixers,detectors,and so on; it will be used for electrofluidic interconnection characterization of the fabricated bench.The reference device is composed of an electric layer and afluidic channel layer.Thefluidic I/O ports are made by PDMS punching.Fig.7shows the fabricated bench and the reference device with a penny.3.Experimental methodsTable1shows experimental scope and conditions.In the experimental study,we characterize pressure drops offluidic interconnections and resistance of electric interconnections after bonding the bench and the reference devices.Oxygen plasma treat-ment bonding[9–11]is used forfluidic bonding and isotropic conductive adhesives(ICA)filling is used for electric bonding. Additionally,for measuring pressure stability of plasma bonding between the bench and the reference device,we observe helium gas leakage in the device-bench set.Fig.8(a)shows the experimental apparatus for measuring pres-sure drops and resistances.We have monitored the line and contact pressure drops for varying DI waterflow rate forfluidic intercon-nection characterization.For obtaining interconnection pressures, we subtract measured pressure drops offluidic lines from measured total pressure drops includingfluidic lines andfluidic contacts.In Fig.9(a),there are twofluidic interconnections and three4mm-length(S1)channels in thefluidic interconnection path,so afluidic interconnection pressure drop becomes the following equation: P con=P total−3× P S12(1) where P total is the measured total pressure drop includingfluidic line and interconnections; P S1is the measured line pressure drop of the4mm-length(S1)channel; P con is the measured contact pressure drop.In the same way,for the electric interconnection character-ization,we measure line and contact resistance.For obtaining electric interconnection resistance,we subtract measured electric line resistance from measured total resistance including lines and interconnections.In Fig.9(b),there are Cr/Au electric lines and three electric interconnections,so an electric interconnection resistance can be measured by the following equation:R con=R total−(R AA’+R AB+R BB’)2(2) where R total is the measured total electric resistance including line and interconnections;R AA ,R AB,and R BB are the measured lineS.Chang et al./Sensors and Actuators B140(2009)342–348345Fig.6.Fabrication process of(a)the microelectrofluidic bench and(b)the reference device.electric resistance of A–A ,A–B,and B–B ,respectively;R con is the measured interconnection electric resistance.Fig.8(b)shows the experimental apparatus for measuring pres-sure stability of the bench.Helium gas is applied to afluidic input in the bench with the device-bench set while pressure gauge is connected.We measure maximum sustained pressures of intercon-nections by observing helium gas leakage.4.Results and discussion4.1.Fluidic interconnectionIn thefluidic interconnection characterization,we measure the pressure drops across thefluidic lines andfluidic contacts for the different DI waterflow rates of10,40,70,and100l min−1.Because the line pressures drops cannot be measured directly in the bench, we design additional test structures,which have channel lengths of4mm(S1),8mm(S2),24mm(S3),24mm(E1),and24mm(E2). The S1,S2,E1and E2have same dimensions with the channels of the bench.The S3is designed for comparing with E1,E2whether they have the equivalent pressure drops.Fig.10(a)summarizes estimated and measured line pressure drops at three different-length channels:S1,S2,and S3.We estimate the numerical line pressure drops usingfluent5.5.The measured average pressure drops are13.6,57.0,97.2and125.4Pa mm−1 with the nonlinearity of3.1%for theflow rates of10,40,70and 100l min−1,respectively.Fig.10(b)shows estimated and mea-sured line pressure drops of S3,E1,and E2.The measured pressure346S.Chang et al./Sensors and Actuators B 140(2009)342–348Table 1Experimental scope and conditions.PurposeMeasuring quantity ConditionsFluidic interconnection Line pressure drop Pressure drop DI water flow rate of 10,40,70,and 100l min −1Contact pressure drop Electric interconnection Line resistance Electric resistance Electric interconnection using ICA aContact resistancePressure stabilityMaximum sustained pressureHelium gas flowingaIsotropic conductive adhesives (ICA).Fig.7.Fabricated microelectrofluidic bench and reference device with a penny.drops by elbows are under 0.098kPa,which is the measuring error,and this corresponds to 3.3%of the pressure drop in the 24mm-length channel (S3).There are few pressure differences among S3,E1,and E2;we can say the bench has two equivalent 24mm-length channels in the fluidic channel layer,experimentally.Fig.11shows contact pressure drops measured by Eq.(1).Aver-age contact pressure drops are 0.12±0.19kPa.The average value corresponds to 4.0%of the measured pressure drop generated in S3at the flow rate of 100l min −1in Fig.10(a).In higher flow rates,deviations of interconnection pressure drops becomes larger,however,the errors from the measurements also become larger at higher flow rates.We measure the contact pressure drops from Eq.(1)subtracting line pressure drops from total pressure drops,thuscontact pressure drops have large deviations due to the large errors of line pressure drops in higher flow rates.However,the deviations of measured contact pressure drops at higher flow rates are negli-gible values considering the line pressure drops,because they are less than 6.3%of the measured line pressure drops.Fig.8.Experimental apparatus for (a)the characterization of fluidic and electric interconnections and (b)the pressure stability.4.2.Electric interconnectionIn the electric interconnection characterization (Table 2),we measure the electric resistances of electric lines and electric con-tacts as a format of mean value ±standard deviation.The average electric resistance per unit length is 0.26 mm −1.The interconnec-tion resistance,including the isotropic conductive adhesives (ICA)and the contact of ICA-pad,is measured as 0.64±0.29 by Eq.(2).The average interconnection resistance of 0.64 is 9.9–29%of the electric line resistances of the bench.The standard deviation of elec-tric interconnection resistance,0.29 ,is originated by variations of gap sizes between two electrodes in the bench and the referencedevices.Because,ICA fills the volume between the gaps,the con-tact resistance is varied relatively largely,however,comparing with the standard deviation of line resistance,the standard deviation ofcontact resistance is under twice of the standard deviation of line resistance.Thus,in order to reduce the standard deviation of con-Fig.9.Fluidic and electric interconnection of the bench and the reference device for measuring the contact pressure drops and the contact resistances:(a)the flow()path in the fluidic interconnection;(b)the current ()path in the electric interconnection.S.Chang et al./Sensors and Actuators B 140(2009)342–348347Fig.10.Measured and estimated line pressure drops of the fluidic channels for the DI water flow rates of 10,40,70,and 100l min −1,respectively,in the case of (a)S1,S2,and S3and (b)S3,E1,and E2.tact resistance,we should control the gap thickness and ICA volume more uniformly or should use high-conductivity ICA.The gap sizes between two electrodes in the bench and the reference devices are determined by the thickness of the reference devices.We can con-trol the gap thickness by controlling the thickness of the reference devices.The ICA volume can be controlled by microliter syringes.However,due to the standard deviation of the line resistance,the contact resistances cannot be lower than the standard deviation of the line resistance.4.3.Pressure stabilityWe measure the maximum sustained pressure,which the bench endures without leakage with helium gas flowing.The measured maximum pressure that has no leakage is measured as 115±11.2kPa.The PDMS layers are cleaved at the maximum pressure.This PDMS–PDMS separation pressure is areasonableFig.11.Measured fluidic contact pressure drops for the DI water flow rates of 10,40,70,and 100l min −1,respectively.Table 2Measured line resistance of R AA ,R AB ,and R BB and contact resistance of R con in Fig.9(b).Electric characteristics Measured resistance ( )R AA a 2.20±0.18R AB b 6.48±0.19R BB c 3.40±0.21R con0.64±0.29a Electric line resistance between A and A in Fig.9(b).b Electric line resistance between A and B in Fig.9(b).cElectric line resistance between B and B in Fig.9(b).value considering conventional PDMS plasma bonding strength [11].5.ConclusionsWe presented the design,fabrication,and characterization of a multi-chip microelectrofluidic bench,achieving both fluidic and electric interconnections with a simple,low pressure-loss and low-temperature electrofluidic interconnection method.The microelectrofluidic bench provided easy alignment of fluidic inter-connections using microfabricated annular fluidic interconnectors;also provides simple electric interconnection by isotropic conduc-tive adhesives (ICA)filling at room temperature.The proposed microelectrofluidic bench was capable of interconnecting four dif-ferent microelectrofluidic chips,which have two pairs of fluidic I/O and three pairs of electric I/O as microelectrofluidic modules.In experimental study,we characterized fluidic contact pressure drops,electric contact resistances,and pressure stability of the bench.The maximum pressure drop per each fluidic contact was measured as 0.12±0.19kPa.The electric resistance per each elec-tric contact was measured as 0.64±0.29 .The pressure stability of the bench was confirmed until 115±11.2kPa.The present micro-electrofluidic bench provided a simple,low pressure-loss and low-temperature electrofluidic interconnection method and had reasonable pressure stability for general microfluidic applications.Therefore,the present microelectrofluidic bench can be useful in thermofluidic and biochemical multi-chip microsystems of modu-lar concepts.AcknowledgementsThis work has been supported by the National Creative Research Initiative Program of the Ministry of Science and Technology (MOST)and the Korea Science and Engineering Foundation (KOSEF)under the project title of “Realization of Bio-Inspired Digital Nanoactuators.”Additional support from Korea-Switzerland Joint Research Program of the Ministry of Science and Technology (MOST)and the Korea Science and Engineering Foundation (KOSEF)under the project title of “NanoBioFluidic Device and Characteriza-tion”is also acknowledged.References[1]D.R.Reyes, D.Iossifidis,P.-A.Auroux, A.Manz,Micro total analysis sys-tems.1.Introduction,theory,and technology,Analytical Chemistry 74(2002)2623–2636.[2]C.G.J.Schabmueller,M.Koch,A.G.R.Evans,A.Brunnschweiler,Design andfabrication of a microfluidic circuitboard,Journal of Micromechanics and Micro-engineering 9(1999)176–179.[3]T.-J.Yao,S.Lee,W.Fang,Y.-C.Tai,Micromachined rubber o-ring micro-fluidiccouplers,in:Proceedings of the 13th International Conference on Micro Electro Mechanical Systems,2000,pp.624–627.[4]B.L.Gray,S.D.Collins,R.L.Smith,Interlocking mechanical and fluidic intercon-nections for microfluidic circuit boards,Sensors and Actuators A 112(2004)18–24.[5]C.K.Fredrickson,Z.H.Fan,Macro-to-micro interfaces for microfluidic devices,Lab on a Chip 4(2004)526–533.348S.Chang et al./Sensors and Actuators B140(2009)342–348[6]Z.Yang,R.Maeda,A world-to-chip socket for microfluidic prototype develop-ment,Electrophoresis23(2002)3474–3478.[7]O.Hofmann,P.Niedermann,A.Manz,Modular approach to fabrication ofthree-dimensional microchannel systems in PDMS—application to sheathflow microchip,Lab on a Chip1(2001)108–114.[8]D.Lu,Q.K.Tong,C.P.Wong,Conductivity mechanism of isotropic conductiveadhesives(ICA’s),IEEE Transactions on Electronics Packaging,and Manufactur-ing22(1999)223–227.[9]B.-H.Jo,L.M.Van Lerberghe,K.M.Motsegood,D.J.Beebe,Three-dimensionalmicro-channel fabrication in polydimethylsiloxane(PDMS)elastomer,Journal of Microelectromechanical Systems9(2000)76–81.[10]D.C.Duffy,J.C.McDonald,O.J.A.Schueller,G.M.Whitesides,Rapid prototyping ofmicrofluidic systems in poly(dimethylsiloxane),Analytical Chemistry70(1998) 4974–4984.[11]S.Bhattacharya,A.Datta,J.M.Berg,S.Gangopadhyay,Studies on surface wet-tability of poly(dimethyl)siloxane(PDMS)and glass under oxygen-plasma treatment and correlation with bond strength,Journal of Microelectromechan-ical Systems14(2005)590–597.[12]R.W.Fox,A.R.McDonald,Introduction to Fluid Mechanics,John Wiley&Sons,New York,1994,pp.318–347.BiographiesSunghwan Chang received a BS degree from Pohang University of Science and Technology(POSTECH),Pohang,Korea,in2001,a MS degree from Korea Advanced Institute of Science and Technology(KAIST),Daejeon,Korea,in2003,and a PhD degree from KAIST for dielectrophoretic(DEP)virtual pillar particle separator research completed in February2009.In December2008,he moved to Nano-mechanical Systems Research Division at Korea Institute of Machinery and Materials (KIMM),where he is currently a senior researcher.Dr.Chang’s research interests are focused on nano/micro manufacturing process and biofluidic microsystems for the point-of-care testing and lab-on-a-chip applications.Sang Do Suk received a BS degree from Department of Mechanical Engineering at Korea Advanced Institute of Science and Technology(KAIST),Daejeon,Korea,in 1999,and a MS degree from the Department of Biosystems at the KAIST,in2004.His research interests are focused on biofluidic microsystems and lab-on-a-chip.Young-Ho Cho received a BS degree summa cum laude from Yeungnam University, Daegu,Korea,in1980;a MS degree from the Korea Advanced Institute of Science and Technology(KAIST),Seoul,Korea,in1982;and a PhD degree from the Univer-sity of California at Berkeley for his electrostatic actuator and crab-leg microflexure research completed in December1990.From1982to1986,he was a research sci-entist of CAD/CAM Research Laboratory,Korea Institute of Science and Technology (KIST),Seoul,Korea.He worked as a post-graduate researcher(1987–1990)and a post-doctoral research associate(1991)of the Berkeley Sensor and Actuator Center (BSAC)at the University of California at Berkeley.In August1991,Dr.Cho moved to KAIST,where he is currently professor in the Departments of Bio and Brain Engi-neering&Mechanical Engineering as well as the Director of Digital Nanolocomotion Center.Dr.Cho’s research interests are focused on the nano/micro electro mechanical systems(N/MEMS)where bio-inspired actuators and detectors are integrated with control circuitry for the high-performance,low-power,low-cost manipulation and processing of non-electrical information carriers or substances in nano/microscales. In Korea,he has served as the Chair of MEMS Division in Korean Society of Mechanical Engineers,the Chair of Steering Committee in Korea National MEMS Programs,and the Committee of National Nanotechnology Planning Board.Dr.Cho has also served for international technical society as the General Co-Chair of IEEE MEMS Conference 2003,the Program Committee of IEEE Optical MEMS Conference,the Chair of World Micromachine Summit2008.Dr.Cho is a member of IEEE and ASME.。
机工英语试题及答案
机工英语试题及答案一、选择题(每题2分,共20分)1. The machine is ________ to operate.A) easyB) difficultC) complexD) impossible2. The engineer ________ the design last night.A) revisedB) approvedC) rejectedD) abandoned3. What is the ________ of this component?A) functionB) structureC) materialD) efficiency4. The assembly line is ________ to meet the demand.A) insufficientB) adequateC) excessiveD) redundant5. The project was ________ due to budget constraints.A) postponedC) acceleratedD) scaled down二、填空题(每题1分,共10分)6. The ________ of the engine is to convert fuel into mechanical energy.7. The ________ of the project was to improve the production efficiency.8. The ________ of the new machine is expected to be high.9. The ________ of the workshop must be followed strictly.10. The ________ of the material is crucial for the product quality.三、阅读理解(每题2分,共20分)Read the following passage and answer the questions.Passage:In the modern industry, precision is key to success. Engineers are constantly seeking new ways to improve the accuracy of their machines. With the advent of advanced technologies, the possibilities for enhancing the performance of industrial equipment have expanded significantly. The development of high-precision sensors and actuators has made it possible to achieve previously unattainable levels of control.11. What is essential in modern industry according to the passage?A) Advanced technologiesB) PrecisionD) High-precision sensors12. What are engineers looking for?A) Ways to reduce costsB) Ways to improve accuracyC) Ways to increase productionD) Ways to expand their teams13. Which of the following has greatly improved the performance of industrial equipment?A) The use of cheaper materialsB) The development of new machinesC) The advent of advanced technologiesD) The increase in the number of engineers14. What has made it possible to achieve higher levels of control?A) The use of cheaper sensorsB) The development of high-precision sensors and actuatorsC) The increase in the number of actuatorsD) The advent of new technologies15. What is the main topic of the passage?A) The importance of precision in modern industryB) The role of engineers in industryC) The history of industrial equipmentD) The cost of advanced technologies四、翻译题(每题5分,共10分)16. 请将以下句子翻译成英文:“这个机器的维护成本相对较低。
传感器技术外文文献及中文翻译
Sensor technologyA sensor is a device which produces a signal in response to its detecting or measuring a property ,such as position , force , torque , pressure , temperature , humidity , speed , acceleration , or vibration .Traditionally ,sensors (such as actuators and switches )have been used to set limits on the performance of machines .Common examples are (a) stops on machine tools to restrict work table movements ,(b) pressure and temperature gages with automatics shut-off features , and (c) governors on engines to prevent excessive speed of operation . Sensor technology has become an important aspect of manufacturing processes and systems .It is essential for proper data acquisition and for the monitoring , communication , and computer control of machines and systems .Because they convert one quantity to another , sensors often are referred to as transducers .Analog sensors produce a signal , such as voltage ,which is proportional to the measured quantity .Digital sensors have numeric or digital outputs that can be transferred to computers directly .Analog-to-coverter(ADC) is available for interfacing analog sensors with computers .Classifications of SensorsSensors that are of interest in manufacturing may be classified generally as follows:Machanical sensors measure such as quantities aspositions ,shape ,velocity ,force ,torque , pressure , vibration , strain , and mass .Electrical sensors measure voltage , current , charge , and conductivity .Magnetic sensors measure magnetic field ,flux , and permeablity .Thermal sensors measure temperature , flux ,conductivity , and special heat .Other types are acoustic , ultrasonic , chemical , optical , radiation , laser ,and fiber-optic .Depending on its application , a sensor may consist of metallic , nonmetallic , organic , or inorganic materials , as well as fluids ,gases ,plasmas , or semiconductors .Using the special characteristics of these materials , sensors covert the quantity or property measured to analog or digital output. The operation of an ordinary mercury thermometer , for example , is based on the difference between the thermal expansion of mercury and that of glass.Similarly , a machine part , a physical obstruction , or barrier in a space can be detected by breaking the beam of light when sensed by a photoelectric cell . A proximity sensor ( which senses and measures the distance between it and an object or a moving member of a machine ) can be based on acoustics , magnetism , capacitance , or optics . Other actuators contact the object and take appropriate action ( usually by electromechanical means ) . Sensors are essential to the conduct of intelligent robots , and are being developed with capabilities that resemble those of humans ( smart sensors , see the following ).This is America, the development of such a surgery Lin Bai an example, through the screen, through a remote control operator to control another manipulator, through the realization of the right abdominal surgery A few years ago our country theexhibition, the United States has been successful in achieving the right to the heart valve surgery and bypass surgery. This robot has in the area, caused a great sensation, but also, AESOP's surgical robot, In fact, it through some equipment to some of the lesions inspections, through a manipulator can be achieved on some parts of the operation Also including remotely operated manipulator, and many doctors are able to participate in the robot under surgery Robot doctor to include doctors with pliers, tweezers or a knife to replace the nurses, while lighting automatically to the doctor's movements linked, the doctor hands off, lighting went off, This is very good, a doctor's assistant.Tactile sensing is the continuous of variable contact forces , commonly by an array of sensors . Such a system is capable of performing within an arbitrarythree-dimensional space .has gradually shifted from manufacturing tonon-manufacturing and service industries, we are talking about the car manufacturer belonging to the manufacturing industry, However, the services sector including cleaning, refueling, rescue, rescue, relief, etc. These belong to the non-manufacturing industries and service industries, so here is compared with the industrial robot, it is a very important difference. It is primarily a mobile platform, it can move to sports, there are some arms operate, also installed some as a force sensor and visual sensors, ultrasonic ranging sensors, etc. It’s surrounding environment for the conduct of identification, to determine its campaign to complete some work, this is service robot’s one of the basic characteristicsIn visual sensing (machine vision , computer vision ) , cameral optically sense the presence and shape of the object . A microprocessor then processes the image ( usually in less than one second ) , the image is measured , and the measurements are digitized ( image recognition ) .Machine vision is suitable particularly for inaccessible parts , in hostile manufacturing environments , for measuring a large number of small features , and in situations where physics contact with the part may cause damage .Small sensors have the capability to perform a logic function , to conducttwo-way communication , and to make a decisions and take appropriate actions . The necessary input and the knowledge required to make a decision can be built into a smart sensor . For example , a computer chip with sensors can be programmed to turn a machine tool off when a cutting tool fails . Likewise , a smart sensor can stop a mobile robot or a robot arm from accidentally coming in contact with an object or people by using quantities such as distance , heat , and noise .Sensor fusion . Sensor fusion basically involves the integration of multiple sensors in such a manner where the individual data from each of the sensors ( such as force , vibration , temperature , and dimensions ) are combined to provide a higher level of information and reliability . A common application of sensor fusion occurs when someone drinks a cup of hot coffee . Although we take such a quotidian event for granted ,it readily can be seen that this process involves data input from the person's eyes , lips , tongue , and hands .Through our basic senses of sight , hearing , smell , taste , and touch , there is real-time monitoring of relative movements , positions , and temperatures . Thus if the coffee is too hot , the hand movement of the cup toward the lip is controlled and adjusted accordingly .The earliest applications of sensor fusion were in robot movement control , missile flight tracking , and similar military applications . Primarily because these activities involve movements that mimic human behavior . Another example of sensor fusion is a machine operation in which a set of different but integrated sensors monitors (a) the dimensions and surface finish of workpiece , (b) tool forces , vibrations ,and wear ,(c) the temperature in various regions of the tool-workpiece system , and (d) the spindle power .An important aspect in sensor fusion is sensor validation : the failure of one particular sensor is detected so that the control system maintains high reliability . For this application ,the receiving of redundant data from different sensors is essential . It can be seen that the receiving , integrating of all data from various sensors can be a complex problem .With advances in sensor size , quality , and technology and continued developments in computer-control systems , artificial neural networks , sensor fusion has become practical and available at low cost .Movement is relatively independent of the number of components, the equivalent of our body, waist is a rotary degree of freedom We have to be able to hold his arm, Arm can be bent, then this three degrees of freedom, Meanwhile there is a wrist posture adjustment to the use of the three autonomy, the general robot has six degrees of freedom. We will be able to space the three locations, three postures, the robot fully achieved, and of course we have less than six degrees of freedomFiber-optic sensors are being developed for gas-turbine engines . These sensors will be installed in critical locations and will monitor the conditions inside the engine , such as temperature , pressure , and flow of gas . Continuous monitoring of the signals from thes sensors will help detect possible engine problems and also provide the necessary data for improving the efficiency of the engines .传感器技术传感器一种通过检测某一参数而产生信号的装置。
Sensors and Actuators APhysical
Sensors and Actuators A:Physical1.IntroductionAt present several wireless capsule endoscopy systems areavailable on the market(Given Imaging,Olympus EndoCapsule)[1].Although appealing to the patient for comfort reasons,they lack three major properties:adequate image resolution (256×256 pixels),sufficient frame rate(2–7 frames per second (fps)),and the ability to move around in a controlled way through the GI tract.These shortcomings hamper their breakthrough with gastro-enterologists,who still prefer the traditional endoscopes[2].These limitations are a direct consequence of the finite energy supply available in these capsular endoscopes.All of them being battery powered,their lifetime is limited between 6 and 8 h,consuming 25 mW.The tight energy limit does not exist in the case of inductive powering[3,25].Without the energy constraint,a higher resolution sensor and higher frame rates become possible.However,in order to get the mass of image data outside the body to the receiver,a high speed data transmitter is required.2.Requirements2.1.Data rateModerm wired endoscopes are already equipped with High-Definition(HD)CCD cameras, providing up to 30 fps at 1920×1080 pixels per frame[4].This resolution would requirea raw Bayer data rate of 78 MByte/D image sensors are not suitable for use in capsular endoscopes because of their high power consumption compared to their CMOS equivalent.HD resolution in wireless endoscopy,even highly compressed,sounds like a fairy tale,for the simple reason that high data rate and low power is hard to combine.It is a questionable prognosis if the big advantage of patient comfort will surpass the need for HD image resolution.Compared to the presently used 256×256 pixel resolution,a big improvement in image quality can already be obtained by using a 640×480 pixel(VGA)image sensor.For 10 fps,which is a major step ahead of the current 2 fps,a raw Bayer data rate of 3.84 MByte/s is required.Still being too high for low power transmission,appropriate compression algorithms have to be used to reduce the raw data rates to acceptable levels suitable for low power transmission.pressionImage compression basically removes visually redundant information from a picture or video stream,without exaggerated loss of detail or introduction of compression artifacts. The (lossy) compression algorithms are either based on removal of high frequency image content(e.g.JPEG)or on removing redundancy from the image colors[5].A20-fold compression can easily be reached without disturbing artifacts or visual image degradation.This will relax the data rate requirement to a more feasible 1.5 Mbps.The choice of the compression engine is important at system level design:depending on the type of compression more bulky and power consuming RAM is needed.2.3.Carrier frequency and modulationLittle research has been done on the choice of the carrier frequency for through-body wireless near-field transmission.The paper of Johnson and Guy describes the attenuation of electromagnetic(EM)waves through the human body[6].This paper suggests to choose a relatively low(<200 MHz)carrier,as the attenuation increases exponentially with the carrier frequency.The reduced attenuation would lead to less required transmitted power.It is currently not known if the same behavior can be expected for near fields,so it is hard to draw a definitive conclusion on the choice of frequency.The work of Chirwa et al.suggests using a carrier between 450 and 900 MHz for maximum radiation[7].This work is based on finite-difference time-domain(FDTD)simulations on a human body model,and does not include antenna loading effects.The same antenna model was used for all frequencies,which partly accounts for the lower radiation intensities at lower frequencies.This work confirms the rapidly increasing absorption above 500 MHz,both for near-and far-fields,as described by Johnson[6].The experiments of Wang et al.describe the in-vitro characterization of ingestible capsules for 30 MHz and 868 MHz[8].They conclude that the low frequency capsule is less influenced by surrounding tissues,shows less orientation-dependent fading and a higher signal to noise(S/N)ratio for a certain power consumption.The research suggests to use a carrier below 500 MHz,although there must exist a trade off between antenna size and wavelength.For far fields,a higher carrier frequency would require a smaller antenna,so less occupied space inside the capsule.As we are working in,or close to the near-field region(the transmission and reception antenna distance is smaller or equal to the wavelength),it is not sure whether this trade-off is still valid.Near-field simulations and experiments will lead to an optimal choice of the carrier.Governmental(FCC and ERO)regulations will eventually define which frequency band can be used[9,10].Candidates could be ISM(433.05–434.79 MHz)or MICS(402–405 MHz),although the defined bandwidth limits the maximum data rate.Currently the 2 m amateur band(144 MHz)is used for data transmission,as this limits the interference with other important bands.FSK is chosen as modulation type,for its simplicity in modulation and demodulation,and its inherent insensitivity to systemnon-linearities.2.4.AntennasThe space around the transmitter antenna can be divided into two main regions as illustrated in Fig.1:far field and near field.In the far field,electric and magnetic fields propagate outward as an electromagnetic wave and are perpendicular to each other and to the direction of propagation.The angular field distribution does not depend on r,the distance from the antenna.The fields are uniquely related to each other viafree-space impedance and decay as 1/r.An the near field,the field components have different angular and radial dependence(e.g.1/r3).The near-field region includes two sub-regions:radiating,where the angular field distribution is dependent on the distance,and reactive,where the energy is stored but not radiated.For antennas whose size is comparable to wavelength(as used in UHF RFID),the approximate boundary between the far-field and the near-field region is commonly given as r=2*D2/λ,where D is the maximum antenna dimension and λis the wavelength.For electrically small antennas(as used in LF/HF RFID and in this application),the radiating near-field region is small and the boundary between the far-field and the near-field regions is commonly given as r=/2π.When the receiver antenna is located in the near field of the transmitter antenna,the coupling between the antennas affects the impedance of both antennas as well as the field distribution around them.The equivalent antenna performance parameters (gain and impedance)can no longer be specified independently from each other and become position and orientation-dependent [11].In general,to calculate the power received by the receiver in such a situation,one needs to perform a three-dimensional electromagnetic simulation of the near-field problem except when the transmitter is small and does not perturb the field of the receiving antenna.The near field of a transmitter antenna can have several tangential and radial electric and magnetic field components which can all contribute to coupling.Two ultimate cases are magnetic (inductive) coupling and electric (capacitive) coupling.In magnetic RFID systems,both receiver and transmitter antennas are coils,inductively coupled to each other like in a transformer.If the transmitter antenna is small,the coupling coefficient is proportional to[12]:where f is the frequency,N is the number of turns in transmitter coil,S is the cross-section area of the coil,B is magnetic field at the transmitter and?is the coil misalignment loss.The primary coupling mechanism in near-field transmission can be either magnetic(inductive)or electric(capacitive).Depending on the environment,the field distribution can be affected by the presence of various objects.Inductive coupled systems,where most reactive energy is stored in the magnetic field,are mostly affected by objects with high magnetic permeability.The magnetic permeability of biological tissue is practically equal to the magnetic permeability of air.On the other hand,capacitive coupling systems,where most reactive energy is stored in electric field,are affected by objects with high dielectric permittivity and loss.Since the body has high epsilon,it seems that inductive coupling is much more efficient for this kind of applications.3.Design strategy3.1.TransmitterThe first work on endoscopic telemetric capsules dates from 1957,where Mackay used a single transistor Hartley oscillator as transmitter[13].The capsule was used to measure gastric pressures,where a pressure sensitive membrane connected to an iron core modulated the oscillator inductance and thereby the oscillation frequency.The operating frequency of this device was in the 100 kHz range.The transmitter developed in earlier work[14]was redesigned such that the power consumption dropped with 66%while doubling the data rate.The transmitter consists of a single transistor Colpitts oscillator as shown in Fig.2.The circuit is built up as a common collector circuit,with the antenna connected to the collector side.The presented topology operates the transistor with a unique double function:(1)it provides gain to the feedback loop to sustain the oscillation and(2)it provides acascode function at the collector.During the capsule GI tract transit,the parasitic loads seen by the antenna change continuously.The cascode limits the antenna load detuning of the LC tank,which greatly improves frequency stability,and therefore reception.FSK modulation is achieved through modulation of the transistor base current.A change in the base current causes a change in base-emitter voltage,which influences the depletion layer width of the base-emitter junction.In this way the base-emitter capacitance is modulated,controlling the tuning of the LC tank.The maximal data rate of this transmitter is limited by the RC time constant of the R data resistor and the capacitance seen at the base.It is clear that from a frequency higher than 1/(R data*C base),the modulation index decreases,because the injected base current is shorted in the base capacitance.Although the occupied bandwidth decreases,the S/N ratio decreases too,and robust demodulation becomes more difficult at faster modulation rates.From experiments,the limit was found to be at 2 Mbps.As stated earlier in the requirements,it is more beneficial to use inductive near-field coupling for the transmitter–receiver system. For that purpose a coil transmitter antenna was developed,which was tuned to resonance around the transmitter frequency,using a trimmable capacitor.The tuned regime(for maximum power output)was measured using a spectrum analyzer.The antenna was designed as a proof of concept,but not simulated or optimized.For that reason further optimization regarding coupling,coil layout and matching is required in the future,when dedicated antennas will be designed and simulated.3.2.ReceiverThe receiver of[14]was reused,which is based on a SA639 IC application note.It consists of an IF mixing system used in DECT receivers.The FSK modulated carrier is converted back to a serial data stream by mixing the IF carrier with a phase-shifted version of itself.This results in a DC component containing the data and a component at twice the IF frequency,which is attenuated using a low pass filter.A2 m low noise amplifier(LNA)was built and included in the system,to improve the noise figure(NF)of the receiving system.The SA639 receiver has a NF of 11 dB,where the LNA has NF of3 dB with a gain of 20 dB.By including the LNA,the overall NF decreased with 6 dB.A tuned loop was used as receiving antenna,designed as a proof of concept for near-field reception.The received data is resynchronized in a hardware developed data recovery system,written in VHDL and implemented in a Xilinx Spartan XC3S200.When a synchronization pattern for a newimage frame is detected in the data stream,the data is buffered in a FIFO and sent through USB to a PC.On the PC the image data is visualized on the screen.The receiver setup is depicted in Fig.3,showing from left to right the USB interface+data recovery,the FSK demodulation board with the PLL below,and the LNA+loop receiver antenna.4.SimulationsThe transmitter circuit was simulated using ELDO[23],in order to:•optimize the component values to maximize the output power,•optimize the component values for the correct carrier frequency,•check for stable and fast start-up behavior,•check the influence of parasitic(capacitive)load changes on the output,•optimize the frequency deviation depending on the DA TA input.The sweep simulation depicted in Fig.4 shows the output frequency at DC modulation.The typical frequency deviation between DA TA=0 and DA TA=1 is approximately 180 kHz.The simulation results in Fig.5 shows the modulated frequency of the transmitter with the DA TA input toggling at 2 Mbps.The short nanosecond spikes are a result of the frequency measurement algorithm.Note the exponential curves at each data edge.This is the consequence of the base capacitance being(dis)charged through the R data resistor.This RC time constant puts a limit on the maximum achievable data rate.An important advantage of this transmitter topology is the insensitivity of the frequency vs.load capacitance variations(Fig.6).The change in frequency is<0.15%for a change in capacitive load of 20 pF.This is a huge improvement compared to[13],where the output frequency is directly proportional to the output capacitive load.5.MeasurementsThe transmitter–receiver system functionality was initially characterized using the setup as described in[24].This setup showed an unmodulated output power of -18 dBm at 50,for a supply voltage of 1.8 V.The power consumption is 2 mW at a modulation rate of 2 Mbps,being equivalent to 15–20 VGA frames/s,using appropriate compression.This results in a FOM of 1 nJ/bit,which is lower than most state-of-the-art transmitter circuits,see Table 1.Fig.7 depicts the data output of the receiver together with the data from the pseudorandom generator,showing that we are able to transmit and receive a data stream a 2 Mbps.A more qualitative test setup was conceived in the meantime, depicted in Figs.8 and 9.The transmitted data is generated from a Micron MT9V013 VGA image sensor(Fig.8 top board+sensor were provided by V ector partner Neuricam).As 30 VGA frames per second are continuously provided,and maximally 2 Mbps can be handled by the transmitter,only one out of 30 frames is buffered in a DRAM,and then slowly released from the buffer(Fig.8,bottom board).This leads to a data rate of 1.5 Mbps,or about 0.5 VGA fps which is fed to the transmitter.To avoid ground loops,or influence/crosstalk between the transmitter and the data generation board,a galvanic isolation between both is mandatory.A TOSLINK optical transmitter and receiver(TOTX147 and TORX147)were used for this purpose,allowing complete galvanic isolation between the data source and the transmitter.Fig.9 depicts the functional transmitter/receiver setup,together with the GUI showing the received picture.Transmitter and receiver are at a distance of about 20 cm.The big difference between[24] and this setup is the use of real VGA image data,as well as the use of near field instead of far-field antennas.For these tests,the transmitter was battery powered by a 3 V coin cell.The transmitter measures only 0.42 cm2 which easily enablesintegration into an endoscopic capsule.Fig.10 depicts the assembled FSK transmitter.6.ConclusionA simple,high data rate and low power transmitter is designed,fabricated and measured.It enables a 4–5 times higher image resolution(VGA instead of QVGA)and 15–17 fps for inductively powered endoscopic capsules.This development greatly improves the acceptation level by the surgeon,and will help to achieve correct diagnosis for GI tract diseases.Future improvements and measurements consist of improving the Tx-Rx antenna system,full integration with a wireless powering module and quantitative tests of the transmitter module,like Bit Error Rate(BER)vs.distance and BER vs.transmission power.More tests need be done on the functional integration of an inductive powering module and transmitter,especially with regards to harmonics of the inductive power link disturbing the transmitted FSK spectrum.AcknowledgmentsThis work is supported by the European Community,within the 6th Framework Programme, through the V ector project(contract number 0339970).The authors wish to thank the project partners and the funding organization.。
Selective detection of NH over NO in combustion exhausts by using Au 3
Ž.Sensors and Actuators B652000163–165www.elsevier.nl r locate r sensorbSelective detection of NH over NO in combustion exhausts by using Au3and MoO doubly promoted WO element33C.N.Xu a,),N.Miura b,Y.Ishida c,K.Matsuda c,N.Yamazoe ba Kyushu National Industrial Research Institute,Saga841-0052,Japanb Graduate School of Engineering Sciences,Kyushu UniÕersity,Fukuoka816-8580,Japanc NGK Insulators,Nagoya467,JapanReceived30July1998;received in revised form25February1999;accepted31May1999AbstractDeveloping a semiconductor sensor to detect residual NH in combustion exhausts after NO removal processes was attempted.It was3xfound that,although the elements using WO were sensitive to both NH and NO,the NO sensitivity could be eliminated selectively by33Žthe addition of MoO to the elements.The best NH-sensing performance was obtained with a doubly promoted element,Au0.8 33.Ž.Ž.wt.%–MoO5wt.%–WO which could respond to NH1–50ppm sensitively and selectively regardless of the presence of high 333concentration of NO in the temperature of400–5008C.The role of MoO was assumed to poison the catalytic sites of WO to convert33NO to NO.q2000Elsevier Science S.A.All rights reserved.2Keywords:WO element;MoO doping effect;Selectivity;NH sensor3331.IntroductionAmmonia sensors have been desired for environmentalw x monitoring and food freshness monitoring1–3.A poten-tial need for an ammonia sensor is also found for combus-Žtion exhaust control in power plants,where NO NO andx .NO is removed by a chemical treatment with NH over 23 catalysts;2NO q4NH q20s3N q6H O.This NO3222x removal process has so far been operated at a slight excess of NH to be sure of the NO removal reaction.If an 3xammonia sensor is available to monitor the residual NH3 after the process,it is possible not only to economize the consumption of NH but also to minimize the harmful3emission of NH to environments.The combustion ex-3hausts from power plants consist of various gaseous com-ponents,the composition of which depends on the type ofturbine and fuel used.A typical composition after the NOx removal process for the combustion exhaust from a steam turbine boiler using coal fuel is, e.g.,O1–6%,H O226–8%,CO11–15%,CO0–1000ppm,SO0–300ppm, 2xNO-60ppm and NH-10ppm.Most of these compo-x3nents are active to semiconductor gas sensors,more or Corresponding author.less,so that the sensor to monitor the residual NH should3be very sensitive and selective to NH over these compo-3nents,especially NO.In this work,we attempted for thexfirst time to develop an ammonia sensor of this type.It hasbeen reported that the WO-based element loaded with3Ž.w xgold Au–WO is sensitive to ammonia1,4.Unfortu-3w x nately,the same element is also sensitive to NO5.Thus,xit was tried in this paper to modify the Au–WO element3with a foreign oxide and convert it into one which isselective to NH over NO.3x2.ExperimentalThe powders of WO and MoO were prepared from33Ž.Ž.NH W O P1.5H O and NH Mo O by thermal 410124246724 decomposition at6008C for5h,respectively.Au wasloaded on the WO powder by impregnation with Au3colloidal dispersion.Loading MoO was carried out as3follows.To prepare MoO-loaded WO,the powder of33WO was impregnated with an aqueous solution of 3Ž.NH Mo O,followed by drying and calcination at 467246008C for3h.MoO was also loaded after WO-based33 element was fabricated.In one case,a paste of MoO3 powder suspended in water was painted into a thin layer0925-4005r00r$-see front matter q2000Elsevier Science S.A.All rights reserved.Ž.PII:S0925-40059900413-X()C.N.Xu et al.r Sensors and Actuators B 652000163–165164Table 1The sensitivity of some semiconductor sensor elements using typical n-or Ž.Ž.Ž.p-type oxides to NH 20ppm and NH 20ppm q NO 100ppm ,both 33diluted in 2%O and N 22MaterialSensitivity Sensitivity 20ppm NH 20ppm NH 33q 100ppm NO SnO 2.20.72In O 3.20.823Cu O 0.90.82a -Fe O 1.20.923WO 4.0 1.530.8wt.%Au–WO 111.33on the element,followed by calcination at 7008C for 1h.In another case,the element kept at 6008C was exposed for 4h to the vapor evaporated from the MoO powder heated 3at 7008C.All of the sensor elements were of a porous w x sintered type 7.Gas-sensing properties were measured in a flow apparatus in the temperature range of 200–5508C.The electrical resistance of each sensor element in the base Ž.Ž.gas of O q N R as well as in the sample gas R was 220g Ž.measured to evaluate the gas sensitivity S which was defined as R r R .The concentration of O was fixed to 0g 2be 2vol%in the base and sample gases,taking into consideration that combustion exhausts usually contain 1–6vol%O .23.Results and discussionTable 1showsthe sensitivity values of some semicon-ductor sensor elements using typical n-or p-type oxides to Ž.Ž.Ž.NH 20ppm and NH 20ppmq NO 100ppm ,both 33diluted with the base gas of 2%O –N .As already 22w x reported for detecting NH in air 1,4,WO was most 33sensitive to NH among the oxides tested and the sensitiv-3ity to NH was largely promoted when it was loaded with 30.8wt.%Au.Fortunately,the Au–WO element was far 3less sensitive to most of the coexistent gases in combustionFig.1.Influence of NO on the detection of NH at 4508C as a function of 3doping amount of MoO in WO element.33Ž.Ž.Fig.2.Typical response transients to NH 5ppm ,NO 50ppm or their 3Ž.mixture for three WO -based elements at 4508C:a 5wt.%MoO –0.833Ž.Ž.wt.%Au–WO ,b 0.8wt.%Au–WO ,c 5wt.%MoO –WO .3333exhausts such as CO,CO and SO .An important excep-22tion,however,was NO ,which was found to interfere with x the NH detection very seriously.As shown in Table 1,3the NH sensitivity was killed almost completely in the 3presenceof NO.It is thus imperative to find out an Ž.additive modifier which effectively eliminates the inter-ference by NO.An extensive material search was carried out for such additives.As a result,MoO was found to be a very 3attractive modifier.Fig.1illustrates the influences of NO Ž.on the NH 5ppm -sensing properties of WO element 33impregnated with MoO as a function of impregnated 3amount of MoO at 4508C.The interference by NO de-3creased continuously as the MoO loading increased up to 35wt.%,above which the interfering effects of NO as wellFig.3.The dependence of electrical resistance on the NH concentration 3under the presence of 0,100,and 500ppm NO at 4508C for 5wt.%MoO –0.8wt.%Au–WO element and 0.8wt.%Au–WO .333()C.N.Xu et al.r Sensors and Actuators B652000163–165165Fig.4.NH sensitivities for MoO–WO elements fabricated by differ-333ent doping methods:impregnation,painting and evaporation,respectively.as the sensitivity values to NH became almost constant.3The attractive effect of MoO was also confirmed with the3Au–WO element over a wider range of operating condi-3tions:temperature400–5008C,O concentration1–202vol%and H O concentration0–2vol%.Fig.2shows 2typical response transients to NH,NO,or NH–NO at33Ž4508C for three WO-based elements loaded with gold0.83.Ž.wt.%and r or MoO5wt.%.The sensitivity to NO,3which was significant with Au–WO,was effectively sup-3pressed by the addition of MoO to WO and Au–WO.333 The doubly doped element,MoO–Au–WO,is seen to33show quick response and high sensitivity to NH without3Ž.being disturbed by NO50ppm.With the same element, however,the interference by NO still became fairly con-spicuous when the NO concentration was enriched to100–500ppm,as shown by the resistance vs.NH concen-3Ž.tration calibration curves under the presence of0,100 and500ppm NO in Fig. 3.In order to eliminate the interfering effect of NO further,the other methods to addMoO to the element,i.e.,painting and evaporation,were 3examined.These methods were found to be somewhat effective for eliminating the interference by NO as com-pared in Fig.4.To understand such a significant effect of MoO,a3 separate experiment was carried out.A porous pack of MoO was placed upstream in the gas-sensing apparatus 3which accommodated a pure WO element known to be3w xsensitive to NO5,6.Surprisingly,it was found that theNO sensitivity of the WO element was seriously sup-3pressed in this setup.For the MoO–WO element pre-33pared by the evaporation and painting methods,the deposi-tion of MoO would be more complete,and this would be 3responsible for the almost-complete elimination of NOw xsensitivity.As observed by SEM8,the WO-based ele-3ments to which MoO was painted and evaporated showed3the presence of fine fibers of MoO standing on the grains3of WO,unlike those prepared by impregnation.This 3suggests that the component deposited from the vapor ofMoO is more effective than that mixed mechanically or 3physically.In separate experiments,it was found that the additionof MoO was not effective for eliminating the sensitivity 3to or interference by NO.Taking this fact into considera-2tion,the mechanism by which MoO eliminates the inter-3ference by NO seems to be as follows.In the usualWO-based elements,there are catalytic sites on WO to 33Ž.oxidize NO to NO NO q1r2O™NO,and this con-222tributes to the sensitivity of the elements to NO.WhenMoO is doped,on the other hand,the catalytic sites are 3poisoned,leading to a loss in NO sensitivity.When MoO3 is deposited by evaporation,the poisoning effect seems particularly large.However,the above mechanism should be verified experimentally.4.ConclusionA semiconductor sensor which could monitor diluteNH indifferent of coexistent NO was successfully ob-3tained by modifying WO-based elements with MoO.The33 modified elements,though sensitive to NO,may be ap-2plied to monitor the residual NH of the NO removal3x process where NO shares exclusive part of NO.x Referencesw x1T.Maekawa,J.Tamaki,N.Miura,N.Yamazoe,Chem.Lett.1992Ž.1992639–642.w x2V.I.Filippov,A.A.Terentjev,S.S.Yakimov,Sensors and Actuators Ž.B28199555–58.w x3M.Ando,T.Tsuchida,S.Suto,T.Suzuki,C.Nakayama,N.Miura,Ž.N.Yamazoe,J.Ceram.Soc.Jpn.10419961112–1116.w x4T.Maekawa,Development of semiconductor sensors for odors,Doc-toral Thesis,Kyushu University,1993.w x5M.Akiyama,Z.Zhang,J.Tamaki,T.Harada,N.Miura,N.Yama-Ž.zoe,Tech.Digest4th IMCS8081992.w x6M.Akiyama,Development of semiconductor gas sensors for nitride oxides,Doctoral Thesis,Kyushu University,1993.w x7 C.N.Xu,J.Tamaki,N.Miura,N.Yamazoe,Sensors and Actuators B Ž.31991147–155.w x8 C.N.Xu,et al.,to be submitted.。
转换器Sensors-transducers2定义能将待测物理量或化学量
The model also allows for the calculation of the resistance of the solution between the electrodes and of the parasitic capacitance through the dielectric under the electrodes. where k is the conductivity of the solution and n the number and l the length of the fingers of the interdigitated electrodes. where ε is the permittivity of the dielectric.
Impedance spectrum of the sensor (here 500 nm wide electrodes, 550 nm spaced) in various KCl solutions (between 10-4 and 100 M KCl), in deionized water and in air:
Sensors and Actuators B: Chemical Volume 49, Issues 1-2, 25 June 1998, Pages 73-80
Outline
1. Introduction 2. Principles 3. Results 4. Conclusions
1. Introduction
Nanoscaled interdigitated electrode arrays were made with deep UV lithography. Electrode widths and spacings from 500 down to 250 nm were achieved and allow for the detection of affinity binding of biomolecular structures (e.g. antigens, DNA) by impedimetric measurements.
Ahsan-2012-Low temperature resp
Sensors and Actuators B 173 (2012) 789–796Contents lists available at SciVerse ScienceDirectSensors and Actuators B:Chemicalj o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /s nbLow temperature response of nanostructured tungsten oxide thin films toward hydrogen and ethanolM.Ahsan a ,∗,M.Z.Ahmad b ,T.Tesfamichael a ,J.Bell a ,W.Wlodarski b ,N.Motta aa Faculty of Built Environment and Engineering,Queensland University of Technology,2George Street,Brisbane,Queensland 4001,Australia bSchool of Electrical and Computer Engineering,RMIT University,Melbourne,Victoria 3001,Australiaa r t i c l ei n f oArticle history:Received 21March 2012Received in revised form 17July 2012Accepted 30July 2012Available online 4 August 2012Keywords:Tungsten oxide Thin films Gas sensingThermal evaporation Nanostructureda b s t r a c tSemiconducting metal oxide based gas sensors usually operate in the temperature range 200–500◦C.In this paper,we present a new WO 3thin film based gas sensor for H 2and C 2H 5OH,operating at 150◦C.Nanostructured WO 3thin films were synthesized by thermal evaporation method.The properties of the as-deposited films were modified by annealing in air at 300◦C and 400◦C.Various analytical tech-niques such as AFM,TEM,XPS,XRD and Raman spectroscopy have been employed to characterize their properties.A clear indication from TEM and XRD analysis is that the as-deposited WO 3films are highly amorphous and no improvement is observed in the crystallinity of the films after annealing at 300◦C.Annealing at 400◦C significantly improved the crystalline properties of the films with the formation of about 5nm grains.The films annealed at 300◦C show no response to C 2H 5OH (ethanol)and a little response to H 2,with maximum response obtained at 280◦C.The films annealed at 400◦C show a very good response to H 2and a moderate response to C 2H 5OH (ethanol)at 150◦C.XPS analysis revealed that annealing of the WO 3thin films at 400◦C produces a significant change in stoichiometry,increasing the number of oxygen vacancies in the film,which is highly beneficial for gas sensing.Our results demon-strate that gas sensors with significant performance at low operating temperatures can be obtained by annealing the WO 3films at 400◦C and optimizing the crystallinity and nanostructure of the as-deposited films.© 2012 Elsevier B.V. All rights reserved.1.IntroductionTungsten oxide (WO 3)is a well-known n-type semiconductor with a band gap of 2.6–3.6eV [1,2],used not only in cat-alytic/photocatalytic [3]and electrochromic [4]applications but also as solid state gas sensors [4,5].Conductometric gas sensors based on the variation of resistivity in thin films are very appeal-ing technologically due to their small size,low cost and low power consumption [5].The gas sensing performance depends mainly on the method of preparation and resulting microstructure.A num-ber of techniques such as sputtering [6,7],thermal oxidation [8],thermal evaporation [9],advanced gas deposition [10]and sol–gel [11]have been used to deposit WO 3thin films.Each technique has its own advantages and limitations.The sensing properties of the material depend on its microstructure and reactivity of the film sur-face,as sensors are strongly influenced by the presence of oxidizing or reducing gases on the surface.The reactivity is enhanced by the∗Corresponding author at:School of Engineering Systems,Faculty of BEE,2George Street,Brisbane,Queensland 4001,Australia.Tel.:+61731384186;fax:+61731381522.E-mail address:m.ahsan@.au (M.Ahsan).presence of defects and adsorbates such as O 2−,O 2−or O −[12].The gas sensing properties can be enhanced by reducing the grain size [13],adding impurities [14–17]and modifying the surface mor-phology and porosity of the films [18].Inclusion of noble metal impurities such as Au,Ag,Pd or metal oxides such as TiO 2in WO 3thin films has shown an improved sensitivity toward various gases [15,18].Nanostructures such as In 2O 3nanowires/nanoneedles and ZnO nanorods have been successfully used to improve sensing per-formance toward hydrogen [19,20].Nanostructured tungsten oxide based conductometric gas sensors have been extensively investi-gated for H 2S [21],NH 3[8,18],NO x [15,22–25],O 3[26],H 2[27,28]and ethanol [29–33]detection.WO 3thin films doped with Pt and Pd have shown a good response to H 2at 200◦C [34,35].Iron addition lower than 10at.%to WO 3films prepared by reactive RF sputter-ing produced an enhancement in sensor response when exposed to NO 2[36].Improvement in sensing response of WO 3films to ethanol has also been achieved by reactive rf sputtering process with inter-ruptions [37].The sensitivity of WO 3films toward ethanol has been largely attributed to desorption of oxygen at the surface of grains [29–33].However,as for any other metal oxide based gas sensors,the WO 3based gas sensors operate efficiently only in the temperature range 200–500◦C [38].Recently,there have been lots of attempts to lower the optimum operating temperature of WO 30925-4005/$–see front matter © 2012 Elsevier B.V. All rights reserved./10.1016/j.snb.2012.07.108790M.Ahsan et al./Sensors and Actuators B173 (2012) 789–796based sensors by different fabrication routes[39–41].For example, deposition techniques such as sol–gel/calcination and reactive dc magnetron sputtering/annealing have shown a good sensitivity of WO3films toward NO2at35◦C[42]and150◦C[43],respectively. However,low temperature response of WO3thinfilms prepared by thermal evaporation technique has not been investigated.The aim of this paper is to investigate the gas sensing perfor-mance of thermally evaporated WO3thinfilms at lower operating temperatures toward hydrogen and ethanol.The effect of heat treatment on the physical,chemical,electronic and gas sensing properties of WO3thinfilms will be analyzed.Thefilm thickness, grain size and purity can be controlled by varying the deposition parameters.Atomic force microscopy(AFM)was used in conjunc-tion with Transmission Electron Microscopy(TEM)to study the surface morphology and grain size.The crystalline properties and phases were determined by XRD and Raman analysis.XPS was used to determine the chemical composition of thefilms.The gas sens-ing properties were characterized by using a conductometric gas measurement setup.2.Experimental methods2.1.Sample preparationThermal evaporation was used to deposit WO3thinfilms on sil-ica substrate with interdigitated Pt electrodes(Electronics Design Center,Case Western Reserve University,Cleveland,USA).The area of the substrate was8mm×8mm.The electrodefingers, spaced100m,have a line thickness of100m and a height of300nm,respectively.Tungsten oxide(99.9%purity,grain size 20m)obtained from Sigma–Aldrich Pty Ltd.,was used as evapora-tion source.Before deposition,the powder was placed in desiccator to avoid any moisture and contamination.A bell jar type PVD unit (Varian Coater with AVT Control System,Australia)was used to deposit the WO3thinfilms at a typical pressure of4×10−5mbar. The substrates were mounted on a substrate holder placed at a dis-tance of38cm in line of sight from the evaporation source.The WO3 thinfilm deposition was carried out at a rate of35nm s−1.A quartz crystal microbalance was used to limit thefilm thickness to300nm. The effect of grain size,porosity,crystallinity and heat treatment for variousfilms with thickness of300nm has been measured.The as-depositedfilms were annealed at300◦C and400◦C for2h in air to improve the microstructural,crystalline and chemical(stoichio-metric)properties of thefilms.2.2.Sample characterizationA JEOL1200TEM at120kV was used to investigate the size and shape of WO3nanoparticles and crystalline structure of the film.The surface morphology of thefilms was studied by AFM in semi-contact mode with an NT-MDT P47Solver Scanning Probe Microscope.The WO3film surface was scanned with a sil-icon tip(radius of curvature10nm)over an area ranging from 500nm×500nm to2000nm×2000nm.The mean grain size,the grain distribution and the surface roughness were determined by using the Nova NT-MDT Image Analysis Software.XPS analysis was carried out using Kratos AXIS Ultra XPS incorporating a165mm hemispherical electron energy analyzer,and using a monochro-matic Al K␣source(1486.6eV)operated at150W(15kV,15mA) incident at45◦with respect to the sample surface,and a line width of0.2eV.Photoelectron data were collected at90◦.Survey scans were taken at160eV pass energy and multiple high resolution scans at20eV.Survey scans were carried out over1200–0eV bind-ing energy with1.0eV steps and a dwell time of100ms.Narrow high-resolution scans were run with0.05eV steps and250ms dwellIntensity(AU)2θ (degree)Fig.1.GIXRD spectra of as-deposited and annealed nanostructured WO3thinfilms.time.Base pressure in the analysis chamber was1.3×10−9mbar and during sample analysis1.3×10−8mbar.Grazing Incidence X-ray Diffraction(GIXRD)analysis was performed on PANanalytical XPert Pro Multi Purpose Diffractometer(MPD).A Cu K␣radiation of wavelength1.540˚A was used.The incident angle was kept at2◦and the2Ârange was kept between10◦and85◦with a step size of 0.05◦.Raman measurements were performed using an Oceanoptics QE6500spectrometer.A532nm line from an argon ion laser was used as the excitation source.To avoid local heating of the sam-ples,a low power of about5mW was used.A Raman shift between wavenumbers200cm−1and1200cm−1has been measured.2.3.Gas sensing measurementsThe WO3thinfilm based gas sensors were exposed to H2 (10–10,000ppm)and C2H5OH(12–185ppm)in the temperature range100–280◦C.The gases were diluted in synthetic air to achieve the desired concentrations.For all the experiments,the totalflow was adjusted to200sccm.The response curve was recorded under a continuousflow of known amount of target gas.A sequence con-trol computer was utilized to computerize the pulse sequence of the target gas concentrations.Initially,synthetic air was passed through the chamber at testing temperature until a stable base-line resistance was observed.Then a sequence of target gas pulses was generated for10min followed by synthetic air pulse.This pro-cedure was continued until a stable baseline was observed after alternate pulses.This was followed by the experimental sequence of pulses with data recording.Each sensor was tested at different temperatures ranging from100◦C to280◦C at50◦C intervals under various concentrations of H2and ethanol,determining the opti-mum operating temperature by comparing the response amplitude achieved.Finally two full range tests for each sensor were per-formed at the optimum operating temperature for each gas.The response amplitude(S)of thefilms is defined as the ratio:S=R air−R gasR gas(1) where R air is the resistance in air under stationary conditions and R gas represents the resistance after the sensor is exposed to the target gas during a definite time.Eq.(1)can be applied for n-type material such as WO3and reducing gases such as H2and C2H5OH.3.Results and discussions3.1.Thinfilm analysisThe GIXRD patterns of WO3films before and after annealing (at300◦C and400◦C)are shown in Fig.1.The as-deposited and 300◦C annealedfilms do not show any diffraction pattern which indicates that the as-deposited WO3film is highly amorphous andM.Ahsan et al./Sensors and Actuators B173 (2012) 789–796791Fig.2.AFM semicontact mode images of(a)as-deposited,(b)300◦C annealed WO3and(c)TEM image of400◦C annealed nanostructured WO3films.annealing the WO3film at300◦C for2h in air did not induce sig-nificant crystallinity in thefilm.However,after annealing at400◦C, significant crystallinity is observed in thefilm,indicated by appear-ance of diffraction peaks in GIXRD pattern.The peaks obtained at 2Â=24.112◦,28.538◦,34.361◦,41.615◦,49.843◦,55.684◦,61.941◦are closely related to monoclinic WO3phase[44].It should be noted that the lattice parameters of orthorhombic WO3phase are very similar to monoclinic phase,and thus these two phases cannot be distinguished within the accuracy of GIXRD data.It is reported that the two intense peaks observed at2Â=24.278◦and34.117◦,belong to(200)and(220)monoclinic planes of WO3corresponding to d=3.663◦and2.626˚A,respectively[45].The lattice parameters were found to be a=7.375˚A,b=7.375˚A and c=3.903˚A and its unit cell volume is about212.38˚A3.Fig.2a and b shows the surface topography of the as-deposited and300◦C annealed WO3films obtained using AFM semicontact mode.The topography of the as-depositedfilm(Fig.2a)reveals a nanostructured surface made up of particle clusters with0.5nm roughness and a mean size of13nm.It appears that the high evap-oration rate duringfilm deposition resulted in highly amorphous films made up of clusters(particles).Annealing of the as-deposited WO3film at300◦C for2h in air slightly reduced the particle size from13nm to10nm without significant change in roughness (Fig.2b).Annealing of the WO3films at400◦C in air for2h resulted in veryfine grains of size5nm as shown from the TEM image in Fig.2c.The nucleation,successive grain growth and coalescence during annealing at400◦C transformed the clusters into smaller grains.The Raman spectra of as-deposited and annealed WO3films are shown in Fig.3.Two characteristic Raman bands are associated with WO3.Thefirst band,associated with O W O bending vibration modes,lies between200and500cm−1.The second band lies in the range600–1000cm−1and is associated with O W O stretching vibration modes.The as-deposited WO3film exhibited two weak and broad Raman bands centered at315cm−1 and799cm−1,respectively.These features are characteristic of amorphous materials and are usually assigned bending and stretching vibration modes of the monoclinic WO3phase[46].The amorphous nature of as-deposited WO3films is also confirmed by GIXRD analysis.Thefilm annealed at300◦C also appears to be amorphous with a slight broadening of the peak at315cm−1.How-ever,the appearance of two O W O stretching modes peaks at 707cm−1and799cm−1[47]confirms the increase of crystallinity of the WO3film after annealing at400◦C,confirming the results792M.Ahsan et al./Sensors and Actuators B 173 (2012) 789–796Fig.3.Raman spectra of as-deposited and annealed nanostructured WO 3films.from GIXRD analysis.Raman analysis shows that films annealed at 300◦C are still amorphous.Annealing at a higher temperature of 400◦C induced significant crystallinity in the film.Fig.4shows the XPS spectra obtained from wide survey scans on the surface of as-deposited and annealed WO 3films between bind-ing energies 0and 1200eV.Peaks of O,N,C and W are observed in all the films.Presence of carbon and nitrogen on the surface is attributed to atmospheric contamination.The C peak measured at binding energy of 284.80eV coincides with literature reported [48]C 1s binding energy and is used as energy reference for the XPS measurements.It can be observed from Fig.4that with increasing annealing temperature,the intensity of O and C peaks drops slightly,indicating desorption of surface contamination upon annealing.Fig.5shows the high resolution core level W 4f and O 1s spectra of WO 3films.For the as-deposited WO 3film,the core level spectra of W 4f are observed at binding energy E b of 35.74eV and 37.88eV corresponding to W 4f 7/2and W 4f 5/2,respectively (Fig.5a).The literature reported E b value for W 4f 7/2is 35.8eV [49].The measured value of 35.74eV is in good agreement with those20040060080010001200I n t e n s i t y (A U )Binding Energy (eV)as-deposited WO3WO 3annealed @ 300oCWO 3annealed @ 400oCO 1sN 1sC 1s W 4dW 4fFig.4.XPS wide survey scans of as-deposited and annealed nanostructured WO 3films.of WO 3powder,electron beam evaporated and electrodeposited WO 3films [50].The W 4f peak shapes get sharper with increasing annealing temperature,which indicates that the surface becomes cleaner due to desorption of surface contaminants by annealing.The broadening of peaks is associated with change in stoichiometry of the sample surface,with the formation of different oxides such as WO 2or WO [51].The W 4f 7/2peak of metallic tungsten is located at 31.50eV [52].The W 4f 7/2peaks located at +4.5,+3and +1.5from the metallic tungsten W 4f 7/2peak are attributed to W 6+,W 5+and W 4+electronic states,respectively [53].No significant change in the W 4f 7/2binding energy is observed when the WO 3film is annealed at 300◦C.However,an annealing at 400◦C shifts the W 4f 7/2peak by 0.3eV down to 35.44,indicating the presence of mixed tungsten states [54].This can be explained by considering that,if an oxygen vacancy exists in the film,the electronic density near its adjacent W atom increases,creating a larger screening,which lowers the 4f level binding energy [55].Oxygen vacancies play an important role as adsorption sites for gaseous species and eventually a minor shift of the binding energy may imply greatly enhanced gas sensitivity [56].The O 1s core level high resolution spectra of as-deposited and annealed WO 3films (Fig.5b)show E b of 530.7eV for as-deposited WO 3film.The main maxima does not change upon annealing at 300◦C,while annealing at 400◦C lowers the binding energy E b by 0.3eV,as in the W 4f peak,pointing to a shift of the Fermi level,which corresponds to a band bending due to the desorption of sur-face contaminants during annealing at 400◦C [57].A small shoulder centered at about 532.9eV is observed in the as-deposited and 300◦C annealed films.This shoulder transforms into a peak when the film is annealed at 400◦C.Such feature is a characteristic of sub-stoichiometric monoclinic tungsten oxides [58].The formation and increasing intensity of this feature is in the sequence WO 3→WO 2.XPS analysis reveals that after annealing at 400◦C,the film surface is free from contamination and has mixed W states.This indicates the presence of oxygen vacancies in the film,which is highly beneficial for gas sensing.3.2.Gas sensor characterization3.2.1.Response of WO 3thin films toward hydrogenNanostructured WO 3thin film based gas sensors were characterized for their sensing performance toward various con-centrations of H 2in the temperature range 100–280◦C.The as-deposited WO 3film did not show any response toward H 2in the measured temperature range (100–280◦C)and concentrations.This film is found unsuitable for gas sensing due to the highly amor-phous nature of the film.Some little response of the as-deposited film to H 2was observed at about 280◦C (Fig.6a)when the WO 3film is annealed at 300◦C.It is noticeable that the baseline and the dynamic resistance of this film are not stable (Fig.6a).The 400◦C annealed film shows significant response toward H 2with a stable dynamic resistance curve (Fig.6b),which is attributed to improved crystalline properties of the film.The 300◦C annealed WO 3film shows maximum response amplitude of 0.3towards 10,000ppm H 2at 280◦C (Fig.7).Max-imum response amplitude of 10is obtained at a much lower operating temperature (150◦C)from the 400◦C annealed film (Fig.7).However,it must be noticed that in the latter case the response dynamics are very slow.For 10,000ppm H 2response and recovery times of 40s and 44s,respectively,are observed for the 300◦C annealed film,whereas response and recovery times of 140s and 80s,are observed for the 400◦C annealed WO 3film.This is not surprising as the gas dynamics slow down at lower operating temperature [59].WO 3is an n-type semiconductor material and commonly oper-ates as gas sensor in the temperature range 200–500◦C [38].WhenM.Ahsan et al./Sensors and Actuators B 173 (2012) 789–7967931x1042x1043x1044x1045x1046x104323436384042C o u n t s /s e c o n d (A U )Binding Energy (eV)1x1042x1043x1044x1045x1046x1047x1048x104524526528530532534C o u n t s /s e c o n d (A U )Binding Energy (eV)Fig.5.High resolution XPS core level W 4f (a)and O 1s (b)spectra of as-deposited and annealed nanostructured WO 3films.Fig.6.Dynamic resistance curve of nanostructured WO 3thin films annealed at 300◦C (a)and 400◦C (b)upon exposure to H 2.Fig.7.Response upon exposure to H 2of nanostructured WO 3thin films.Triangles:film annealed at 300◦C,response (10×)measured at 280◦C.Squares:film annealed at 400◦C,response measured at 150◦C.it is exposed to a reducing gas such as H 2,the oxygen adsorbates on the film surface interact with the gas and release electrons back to the film,causing a drop in film resistance.This behavior is observed for the 300◦C annealed WO 3film when exposed to H 2at 280◦C.However the opposite behavior (i.e.an increase in resistance)is observed for the 400◦C annealed WO 3film upon exposure to H 2at 150◦C.Such behavior cannot be explained by merely considering the microstructural properties such as grain size and porosity of the film.In polycrystalline materials,surface barriers are formed at the intergranular surfaces which electrons have to overcome for tak-ing part in the conduction mechanism.The height of surface barrier depends on concentration of charge carriers (oxygen adsorbates)at the surface,therefore,overall resistance changes can be correlated with changes in surface band bending.The overall resistance and hence,surface band bending increase exponentially when poly-crystalline WO 3surface is exposed to increasing concentrations of oxygen [60].The observed behavior in the 400◦C annealed WO 3film exposed to H 2at operating temperature of 150◦C might arise from various forms of oxygen adsorbates (O −,O 2−and O 2−)on WO 3surface,which depend on temperature.At 150◦C,the most dom-inant form of adsorbed oxygen is O 2−[61].Upon exposure to H 2,794M.Ahsan et al./Sensors and Actuators B173 (2012) 789–796Fig.8.Dynamic resistance curve(a)and response(b)of nanostructured WO3film annealed at400◦C for2h in air,exposed to C2H5OH.the O2−species dissociates into O−with the formation of water,as per the following equation:H2+O2−→H2O+O−(2) At150◦C,the rate of water desorption from the surface is higher than rate of water formation[62].In situ Raman analysis of WO3films annealed at300◦C and400◦C shows that rate of water desorp-tion above100◦C was much faster than the rate of water formation on thefilm surface when WO3film was exposed to H2[62].The high concentration range of H2(600–10,000ppm)produces more O−species on the surface,leading to increase in surface barrier height, consequently increasing the resistance.Hence,this can be a rea-son why an increase in resistance was observed at lower operating temperature.The high response observed for the400◦C annealed WO3film toward H2at150◦C is attributed to its highly crystalline nature,very small grain size(5nm)and a porous structure(see Fig.1).Thefilm is also composed of mixed W states,as observed in XPS analysis,resulting in increased number of oxygen vacancies on the surface,when compared to as-deposited or the300◦C annealed film.No significant difference in porosity was observed of the annealedfilms as compared to the as-depositedfilm.Interaction of H2with Pt might be possible through the pores in thefilm as well as exposed portions of the Pt electrode.However,no response to H2was observed in the case of as-deposited WO3films,little response from the300◦C annealedfilm and good response from 400◦C annealedfilm.This indicates that the response to these gases arises mainly from the improved properties(example:crystallinity and oxygen vacancies)of thefilm achieved by annealing at400◦C.3.2.2.Response of WO3thinfilms toward ethanolThe as-deposited and300◦C annealed WO3films show no response toward ethanol in the measured temperature range and concentrations and found unsuitable for ethanol sensing.This may be attributed to the amorphous nature of thefilms.The dynamic resistance curve and response of400◦C annealed WO3film exposed to ethanol at150◦C are shown in Fig.8.Thefilm exhibits a stable baseline resistance(Fig.8a),owing to its crystalline properties.The response amplitude increased with increasing ethanol concentra-tion,reaching0.2for185ppm ethanol(Fig.8b).The response and recovery times for185ppm ethanol are found to be180s and288s, respectively.The dominant oxygen species on thefilm surface at150◦C is O2−, the conduction mechanism takes place by the following reaction: C2H5OH+O2−→CH3COOH+e−(3)The above reaction increases the concentration of electrons, which decreases the surface band bending,resulting in drop in resistance.Hence,a decrease in resistance is observed upon exposure to ethanol.With increasing concentration of ethanol,a further drop in resistance is expected,which is confirmed by the dynamic response(Fig.8a).The response of the400◦C annealed WO3film at150◦C is much higher to H2(S=10)than ethanol (S=0.2).Hydrogen molecule is small compared to ethanol and can easily diffuse through the porousfilm and interact with more sur-face area,hence,higher response may be achieved.The gas sensing performance depends on a number of factors which include grain size,porosity,oxygen vacancies and the type of adsorbates on the film surface.In the present study,the400◦C annealedfilms are found to be highly porous and crystalline with very small grain size of5nm.Moreover,thesefilms contain high number of vacancies. All these factors have contributed significantly toward improved sensing performance of thesefilms to hydrogen and ethanol at a lower operating temperature of150◦C.4.ConclusionsHighly amorphous nanostructured WO3thinfilms with cluster of particles have been obtained at high deposition rate of35nm s−1 using thermal evaporation.Post deposition annealing of the as-depositedfilms at300◦C for2h in air did not show crystalline characteristics of thefilm.However,annealing at400◦C for2h in air transformed these clusters into veryfine crystalline grains of about5nm,and induced mixed tungsten states(W6+,W5+and W4+)in thefilms.The WO3film annealed at300◦C showed lit-tle response to H2at an operating temperature of280◦C and no response toward C2H5OH in the temperature range100–280◦C. However,thefilm annealed at400◦C showed high response to H2and C2H5OH with maximum response amplitude of S=10and S=0.2,respectively at an operating temperature of150◦C.The high film porosity with significant oxygen vacancies and very small crys-talline grains achieved by annealing at400◦C greatly influenced the hydrogen and ethanol sensing performance of the thermally evaporated WO3sensor at lower operating temperature of150◦C. 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SNB小论文
Sensors and Actuators B 182 (2013) 170–175Contents lists available at SciVerse ScienceDirectSensors and Actuators B:Chemicalj o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /s nbEnhanced acetone gas-sensing performance of La 2O 3-doped flowerlike ZnO structure composed of nanorodsJian-Qun He a ,Jing Yin b ,Dong Liu a ,Le-Xi Zhang a ,Feng-Shi Cai a ,Li-Jian Bie a ,c ,∗aSchool of Materials Science and Engineering,Tianjin University of Technology,Tianjin 300384,ChinabSchool of Environmental Science and Safety Engineering,Tianjin University of Technology,Tianjin 300384,China cTianjin Key Lab for Photoelectric Materials &Devices,Tianjin University of Technology,Tianjin 300384,Chinaa r t i c l ei n f oArticle history:Received 21February 2012Received in revised form 20February 2013Accepted 21February 2013Available online 1 March 2013Keywords:Zinc oxideCo-precipitation Flowerlike La 2O 3-doped Gas-sensinga b s t r a c tFlowerlike ZnO nanostructures composed of nanorods were synthesized by co-precipitation method using Zn(NO 3)2·6H 2O and (CH 2)6N 4as reactants,polyethylene glycol 400as 2O 3was dispersed onto the obtained ZnO with a content of 0.5–2.0wt%to enhance the gas-sensing property.Gas-sensing results of the La 2O 3-doped ZnO to ethanol,acetone,ammonia and formaldehyde,respectively,reveal that response of La 2O 3-doped ZnO to a specified test gas is higher than that of no La 2O 3-doped.Response of 1.0wt%La 2O 3-doped ZnO to 200ppm acetone reaches 54.1at the working temperature of 350◦C,and the response time is only 8s,implying the potential for detection of low gas concentration.© 2013 Elsevier B.V. All rights reserved.1.IntroductionAs the most important functional oxides with a direct wide bandgap (3.37eV)and large excitation binding energy (60meV)[1],ZnO has been widely used in gas-sensing application due to its good response to a variety of reducing or oxidizing gases,low cost,and being friendly to the environment [2–9].Applications of ZnO or Fe 2O 3semiconducting oxide in acetone gas-sensing were reported in literatures [10,11],but neither the gas-sensing response,nor the response and recovery time of the sensing device was good enough for detecting low gas concen-tration.Reports showed that the gas-sensing property could be improved by modification of the semiconducting oxides with noble metals (Au,Pt,Pd,etc.)or rare earth oxide [12–16].Although various techniques,such as magnetron sputtering,plasma enhanced chemical vapour deposition,spray pyrolysis,sol–gel process,vacuum evaporation,were reported in the prepa-ration of ZnO nanostructures with an abundant variety of shapes [17–20],simple co-precipitation method has been attracting much attention in the synthesis of novel ZnO nanostructures recently.∗Corresponding author at:School of Materials Science and Engineering,Tianjin University of Technology,Tianjin 300384,China.Tel.:+862260215285;fax:+862260215285.E-mail addresses:ljbie@ ,ljbie@ (L.-J.Bie).In this paper,facile synthesis of La 2O 3doped flowerlike ZnO hierarchical structure composed of nanorods via co-precipitation method is reported,and also are the gas-sensing properties of the obtained ZnO samples to ethanol (C 2H 5OH),acetone (CH 3COCH 3),ammonia (NH 3)and formaldehyde (HCHO).2.Experimental2.1.Preparation of La 2O 3-doped flowerlike ZnO nanostructuresAll the reagents used in the experiment were of analytical grade without further purification.The flowerlike ZnO nanostructures were prepared as follows:(1)0.7g hexamethylenetetramine ((CH 2)6N 4)were dissolved in100ml distilled water to get Solution A,2.878g zinc nitrate (Zn(NO 3)2·6H 2O)was dissolved in 100ml distilled water to get Solution B.Then stoichiometric amount of Solution A was mixed with Solution B and 0.004g polyethylene glycol 400(PEG400)under stirring for 10min to form a transparent solu-tion.(2)The obtained solution was kept at 95◦C for 7h,resulting in theformation of white powders.(3)The white powders were collected and washed several timeswith distilled water and ethanol,dried at 80◦C for 2h,then calcined at 400◦C for 2h,to form the ZnO nanostructures.0925-4005/$–see front matter © 2013 Elsevier B.V. All rights reserved./10.1016/j.snb.2013.02.085J.-Q.He et al./Sensors and Actuators B182 (2013) 170–175171Fig.1.Schematic illustration of(a)a gas sensor and(b)the measuring electric circuit of gas-sensing characteristics.(4)Stoichiometric amount of La2O3was dispersed onto the as-prepared ZnO sample with adequate amount of ethanol under vigorous stirring in an ultrasonic bath for10min,then the mix-ture was dried in air at80◦C,annealed at400◦C for2h to obtain the La2O3-doped 2O3content in ZnO sample was cal-culated by the weight ratio of La2O3to ZnO in the experiment.2.2.Sensor fabrication and gas-sensing property measurementThe as-prepared ZnO sample was grinded with several drops of terpineol in an agate mortar,and then the formed slurry was coated onto an alumina tube with a diameter of1mm and length of4mm,positioned with a pair of Au electrodes and four Pt wires on both ends of the tube(Fig.1a).A Ni–Cr alloy coil inside the tube was employed as a heater to adjust the working temperature by tuning the heating voltage,as a linear correlation exists between the heating voltage and the working temperature.A stationary state gas distribution method was used for the test of gas-sensing properties.Gas-sensing tests were performed using a WS-60A system(Zhengzhou Winsen Electronics Technology Co. Ltd.,China).A schematic illustration of the gas-sensing measure-ment is shown in Fig.1b.In the measuring electric circuit of gas sensor,a load resistor is connected in series with a gas sensor.The circuit voltage V c is10V,and the output voltage(V out)is the ter-minal voltage of the load resistor R l.The working temperature of sensor can be adjusted by varying the heating voltage V h.The resis-tance of a sensor in air or test gas is measured by monitoring V out. In order to improve the stability and repeatability,the gas-sensing unit was aged at a heating voltage of5V for48h in air before the measurement.The sensor response to a test gas,S r,is defined as:S r=R aR g(1)where R a is the resistance of a sensor in air,and R g is that in a test gas.The response and recovery time are defined as the time of90% total resistance change required at a specified working tempera-ture.2.3.Characterization of the samplesThe crystal structure of samples was characterized by X-ray diffractmeter(XRD)(Rigaku D/Max2500PC)with monochroma-tized Cu K␣( =1.5418˚A)incident radiation using a tube voltage and current of40kV and150mA,respectively.XRD data was col-lected at a scan speed of1◦/min with a step of0.02◦.The morphology of the synthesized sample was examined using afield-emission scanning electron microscope(SEM)(JEOL JSM-6700F).The photoluminescence(PL)measurements were carried out on a Shimadzu RF-5301PCfluorescence spectrophotometer equipped with a150W xenon lamp as the excitation source.The specific surface areas were measured via the Brunauer–Enmet–Teller(BET)method using a N2adsorption at77K after treating the samples at200◦C and10−4Pa for2h using a Tristar-3000apparatus.3.Results and discussion3.1.XRD characterizationFig.2shows the XRD pattern of the La2O3-dopedflowerlike ZnO sample.The main diffraction peaks can be indexed as the wurtzite structure ZnO with a=b=0.3253nm,c=0.5213nm,which is in good agreement with the JCPDS No.36-1451.Four diffrac-tion peaks of La2O3can be observed,which can be indexed as a hexagonal structure with a=b=0.4039nm,c=0.6403nm(JCPDS No.83-1345).3.2.Structure and morphologyFig.3shows the typical SEM images of the as-prepared ZnO hierarchical structures and the focus of oneflowerlike ZnO cluster, respectively.As can be seen,the morphology of the ZnO struc-tures is similar on large scale.The prepared ZnO structures usually exhibitsflowerlike shape,composed of ZnO nanorods with a diam-eter of90nm,which might be suitable for gas-sensing application due to the steric hindrance to aggregation and easy diffusion for gas molecules.Fig.4shows the SEM images of La2O3-doped ZnO structures with various La2O3concentrations.The morphology of the La2O3-doped ZnO nanostructures isflowerlike,similar with pure ZnO,as the La2O3doping content is0.5wt%and1.0wt%,but agglomeration appears when the La2O3content reaches2.0wt%.The formation offlowerlike ZnO hierarchical structure can be attributed to both the action of PEG400and the reaction kinetics. PEG400surfactant molecule is a chain structure with hydropho-bic and hydrophilic group,which might form spherical cores in water[21–23].Oxygen atoms on the surface of these spherical cores may attract Zn2+cations to form the ZnO crystal seeds.As the seed crystals grow,ZnO nanorods will be formed in the co-precipitation process,resulting in theflowerlike nanostructures.A schematic illustration of the synthesis procedure is shown in Fig.5.3.3.Gas sensing propertiesThe gas-sensing responses of the pure and La2O3-dopedflower-like ZnO structures to100ppm acetone as a function of the working temperature are shown in Fig.6.Response of La2O3-dopedZnO Fig.2.Typical XRD patterns of the La2O3-doped ZnO samples.172J.-Q.He et al./Sensors and Actuators B 182 (2013) 170–175Fig.3.Typical SEM images of (a)pure ZnO hierarchical structures and (b)focus of single flowerlike ZnO cluster.sample exhibits a rapid increase,and reaches the maximum at the working temperature of 350◦C,so the working temperature of the La 2O 3-doped ZnO nanostructures is chosen as 350◦C in the follow-ing measurements.As can be seen from Fig.5,the response of ZnO sample with La 2O 3doping concentration of 1.0wt%La 2O 3has a much bigger response than other samples,so sample with 1.0wt%La 2O 3concentration (La 2O 3/ZnO)was focused in the following dis-cussion.Fig.7shows the gas-sensing responses of the pure and La 2O 3-doped flowerlike ZnO nanostructures at 350◦C as a function of acetone concentration.The response of the La 2O 3-doped ZnO sen-sor increases with the increase of acetone concentration,and response of La 2O 3-doped ZnO structure to 200ppm acetone at 350◦C reaches 54.1,which is about 3times that of pure ZnO sample.Fig.8(a)represents the dynamic variation of response to ace-tone with concentrations varying from 10ppm to 200ppm,the response time and recovery time are about 9s and 13s with 10ppm acetone,11s and 17s with 200ppm acetone,respectively,revea-ling that high and fast gas response can be achieved in detecting low concentration acetone using the flowerlike La 2O 3-doped ZnO nanostructures as sensing material.The gas-sensing selectivity of ZnO gas sensor has been mea-sured using ethanol (C 2H 5OH),ammonia (NH 3)and formaldehyde (HCHO)with concentration of 10,100and 200ppm,respectively (Fig.9),showing that La 2O 3-doped flowerlike ZnO structures has good selectivity for acetone.3.4.Gas-sensing mechanismIt is well-known that the gas-sensing response of metal oxide semiconductors originates from the fluctuations of electron concentration in the charge-depletion layer induced by the con-sumption of oxygen adsorbates by the reaction with target gases in the target gas atmosphere and then re-formation of chemisorbed oxygen in air.Accordingly,the variation of acetone vapor response can be attributed to the defect formation and change in specific surface areas resulted from the La 2O 3doping on ZnO surface.On the one hand,the response value is not directly proportional to the La 2O 3content loaded,thus the ZnO surface region influenced by La 2O 3should play a key role in the gas-sensing improvement.After La 2O 3doping,some Zn 2+might be substituted by La 3+cations,resulting in the increase of electrons concentration in the doped ZnO samples:La 2O 3(s)ZnO −→2La •Zn +2O x 0+12O 2(g)+2e (2)Namely,incremental oxygen molecules can be chemisorbed and then ionized on ZnO surface,resulting in higher response [24].As a useful tool for characterizing surface defects,room temperature photoluminescence (PL)measurement was carried out.As can beseen from Fig.10,both weak UV emission peak (∼390nm)and strong visible emission peak (∼610nm)exist in all the samples.The former refers to the intrinsic transition between the valence band (VB)and the conduction band (CB),while the later is usually caused by surface defects.Suppose that the area of UV peak (S B )and visible peak (S D )represent pristine ZnO and the quantity of surface defects,respectively,thus the contents of structure defect could be calculated via the ratio of the S D /S B .Through curve decon-volution,each PL spectrum can be well-fitted to the superposition of two Gaussian sub-peaks and are assigned to band gap and sur-face defect emission.Interestingly,ZnO doped with 1.0wt%La 2O 3shows the highest ratio in the 4samples as shown in the inset of Fig.10.This phenomenon is in good accordance with the gas-sensing result that 1.0wt%La 2O 3-doped ZnO exhibits the largest response value to acetone.Therefore,it is reasonable to explain the effect of La 2O 3doping on gas-sensing enhancement from the aspect of surface defects.On the other hand,oxygen sorption also plays an important role in electrical transport properties of ZnO in the acetone sensing pro-cess.The oxygen ionosorption removes conduction electrons,and lowers the conductance of ZnO.First,reactive oxygen species such as O 2−,O 2−and O −are adsorbed on the ZnO surface at high temperatures.It should be noted that the chemisorbed oxygen species depend strongly on temperature.At low temperatures,O 2−is commonly chemisorbed;At high temperatures,while O 2−disappear rapidly,O −and O 2−are commonly chemisorbed [25].The reaction can be described as follow [26]:O 2(gas)↔O 2(adsorbed)(3)O 2(adsorbed)+e −↔O 2−(4)O 2−+e −↔2O −(5)As the reducing acetone vapor is introduced into the test cham-ber,the conductance of the ZnO nanorods will increase due to exchange of electrons between the ionosorbed species and ZnO [27].The reaction between acetone and ionic oxygen species can be described as [26,28]:CH 3COCH 3(gas)+O −→CH 3CO +CH 2+OH −+e −(6)CH 3COCH 3(gas)+O −→CH 3C +O +CH 3O −+e −(7)CH 3COCH 3+O −(bulk)→CH 3COOH +O(vacancies)(8)CH 3C +O →C +H 3+CO(9)CO +O −→CO 2+e −(10)Compared with ZnO sample (b)in Fig.8,the overall decrease in sen-sor resistance can be observed in the La 2O 3-doped sample (a).As the decrease in sensor resistance by the balance control may resultJ.-Q.He et al./Sensors and Actuators B 182 (2013) 170–175173Fig.4.SEM images of La 2O 3-doped flowerlike ZnO hierarchical structures with La 2O 3doping concentration of (a)0.5wt%,(b)1.0wt%and (c)2.0wt%.Fig.5.Schematic illustration of ZnO synthesisprocedure.Fig.6.Response of the pure and La 2O 3-doped ZnO structures to 100ppm acetone at different workingtemperatures.Fig.7.Response of the pure and La 2O 3-doped ZnO nanostructures to various ace-toneconcentrations.Fig.8.Dynamic responses of samples to different acetone concentrations (a)1.0wt%La 2O 3-doped ZnO and (b)pure ZnO.174J.-Q.He et al./Sensors and Actuators B 182 (2013) 170–175Fig.9.Response of La 2O 3-doped ZnO nanostructures sensors to different gases.in a decrease in response to inflammable gases in n-type semicon-ductor gas sensors,the observed acetone response enhancement should be attributed to the increased reactivity of acetone by the La 2O 3doping.According to the surface-reaction-related gas-sensing mecha-nism mentioned above,the response values are directly affected by the specific surface areas of sensing ually,larger specific surface areas lead to much higher response values [29].It is found that the specific surface areas of the ZnO samples changed after La 2O 3doping,although their nanorod profile and flowerlike structure kept almost the same as that of pure ZnO (Figs.3and 4).Comparing with the BET surface area of pure ZnO (6.40m 2/g),the surface areas of La 2O 3-doped ZnO samples increase,which are 10.07m 2/g (0.5wt%La 2O 3),9.82m 2/g (1.0wt%La 2O 3)and 7.63m 2/g (2.0wt%La 2O 3),respectively.The measured BET sur-face area decreases as the doping content of La 2O 3increases .It is clear that all La 2O 3-doped ZnO show enhanced acetone responses than that of pure ZnO sample,which is in accordance with their larger surface areas,although an exact linear relationship is not observed between the surface areas and their response values.This phenomenon reveals that the enhanced acetone response can be benefited from the increased surface areas by La 2O 3-doping,whereas 1.0wt%La 2O 3-doped ZnO displays the highestresponseFig.10.PL spectra of ZnO loaded with different La 2O 3contents,the inset shows relationship between the defect contents and La 2O 3doping contents.value and 0.5wt%La 2O 3-doped ZnO hold the largest surface area implies that the surface area plays an important role but not a preponderant one on the response enhancement.In conclusion,the enhanced acetone response of La 2O 3-doped ZnO might be attributed to the combined actions of the aforemen-tioned factors:formation of intrinsic defects and increased specific surface areas induced by the doping of La 2O 3.Additionally,the cat-alytic activity of rare earth oxide (La 2O 3in this work)might also devote to the increased acetone response,since they can accelerate the dehydrogenation and consecutive oxidation of hydrocarbons [30].4.ConclusionLa 2O 3-doped flowerlike ZnO nanostructures composed of nanorods can be fabricated via co-precipitation method using PEG400as surfactants.Gas-sensing property of the La 2O 3-doped ZnO to test gas is greatly enhanced compared with the no La 2O 3-doped.The response of 1.0wt%La 2O 3-doped ZnO gas sensor to 10ppm acetone reaches 7.6,and a response of 54.1to 200ppm acetone is obtained at the working temperature of 350◦C,with a response time of 8s only,implying the potential for detecting low gas concentration.AcknowledgmentsThis work is financially supported by National Natural Sci-ence Foundation of China (No.21271139),Tianjin Natural Science Foundation (No.08JCZDJC18700).The authors would like to thank Professor Wei-Ping Huang of Nankai University (China)for his help-ful discussion regarding the gas-sensing mechanism.References[1]R.N.Viswanath,S.Ramasamy,R.Ramamoorthy,P.Jayavel,T.Nagarajan,Prepa-ration and characterization of nanocrystalline ZnO based materials for varistor applications,Nanostructured Materials 6(1995)993–996.[2]A.R.Raju, C.N.R.Rao,Gas-sensing characteristics of ZnO and copper-impregnated ZnO,Sensors and Actuators B-Chemical 3(1991)305–310.[3]A.Jones,T.A.Jones,B.Mann,J.G.Firth,The effect of the physical form of the oxideon the conductivity changes produced by CH 4,CO and H 2O on ZnO,Sensors and Actuators B-Chemical 5(1984)75–78.[4]D.F.Paraguay,M.Miki-Yoshida,J.Morales,J.Solis,L.W.Estrada,Influence of Al,In,Cu,Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour,Thin Solid Films 373(2000)137–140.[5]J.D.Choi,G.M.Choi,Electrical,CO gas sensing properties of layered ZnO–CuOsensor,Sensors and Actuators B-Chemical 69(2000)120–126.[6]A.Nemeth,E.Horvath,badi,L.Fedak,I.Barsony,Single step deposition ofdifferent morphology ZnO gas sensing films,Sensors and Actuators B-Chemical 127(2007)157–160.[7]G.Sberveglieri,P.Nelli,S.Groppelli,F.Quaranta,A.Valentini,L.Vasanelli,Oxygen gas sensing characteristics at ambient pressure of undoped and lithium-doped ZnO-sputtered thin films,Materials Science and Engineering B B7(1990)63–68.[8]C.Baratto,G.Sberveglieri,A.Onischuk,B.Caruso,S.di Stasio,Low temperatureselective NO 2sensors by nanostructured fibres of ZnO,Sensors and Actuators B-Chemical 100(2004)261–265.[9]G.Sberveglieri,S.Groppelli,P.Nelli,F.Quaranta,A.Valentini,L.Vasanelli,Oxy-gen gas-sensing characteristics for ZnO(Li)sputtered thin films,Sensors and Actuators B-Chemical 7(1992)747–751.[10]S.C.Navale,V.Ravi,I.S.Mulla,Investigations on Ru doped ZnO:strain calcu-lations and gas sensing study,Sensors and Actuators B-Chemical 139(2009)466–470.[11]Z.H.Jing,Synthesis,characterization and gas sensing properties of undoped andZn-doped gamma-Fe 2O 3-based gas sensors,Materials Science and Engineering A 441(2006)176–180.[12]P.T.Moseley,New trends and future prospects of thick-and thin-film gas sen-sors,Sensors and Actuators B-Chemical 3(1991)167–174.[13]C.D.Lokhande,V.R.Shinde,T.P.Gujar,Enhanced response of porous ZnOnanobeads towards LPG:effect of Pd sensitization,Sensors and Actuators B-Chemical 123(2007)701–706.[14]J.F.Chang,H.H.Kuo,I.C.Leu,M.H.Hon,The effects of thickness and opera-tion temperature on ZnO:Al thin film CO gas sensor,Sensors and Actuators B-Chemical 84(2002)258–264.J.-Q.He et al./Sensors and Actuators B182 (2013) 170–175175[15]Y.Zeng,Z.Lou,L.L.Wang,B.Zou,T.Zhang,W.T.Zheng,G.T.Zou,Enhancedammonia sensing performances of Pd-sensitizedflowerlike ZnO nanostructure, Sensors and Actuators B-Chemical156(2011)395–400.[16]K.V.Gurav,P.R.Deshmukh,C.D.Lokhande,LPG sensing properties of Pd-sensitized vertically aligned ZnO nanorods,Sensors and Actuators B-Chemical 151(2011)365–369.[17]N.Koshizaki,T.Oyama,Sensing characteristics of ZnO-based NOx sensor,Sen-sors and Actuators B-Chemical66(2000)119.[18]S.Major,A.Banerjee,K.L.Chopra,Optical and electronic properties of zinc oxidefilms prepared by spray pyrolysis,Thin Solid Films125(1985)179–185. [19]J.N.Zeng,J.K.Low,Z.M.Ren,T.Liew,Y.F.Lu,Effect of deposition conditions onoptical and electrical properties of ZnOfilms prepared by pulsed laser deposi-tion,Applied Surface Science197–198(2002)362–367.[20]J.H.Lee,K.H.Ko,B.O.Park,Electrical and optical properties of ZnO transparentconductingfilms by the sol–gel method,Journal of Crystal Growth247(2003) 119–125.[21]N.Naderi,N.Sharifi-Sanjani,B.Khayyat-Naderi,R.Faridi-Majidi,Preparationof organic–inorganic nanocomposites with core–shell structure by inorganic powders,Journal of Applied Polymer Science99(2006)2943–2950.[22]A.Imhof,Preparation and characterization of titania-coated polystyrenespheres and hollow titania shells,Langmuir17(2001)3579–3585.[23]H.Zhang,D.Yang,Y.J.Ji,X.Y.Ma,J.Xu,D.L.Que,Low temperature synthesisofflowerlike ZnO nanostructures by cetyltrimethylammonium bromide-assisted hydrothermal process,Journal of Physical Chemistry B108(2004) 3955–3958.[24]N.Han,P.Hu, A.Zuo, D.Zhang,Y.Tian,Y.Chen,Photoluminescenceinvestigation on the gas sensing property of ZnO nanorods prepared by plasma-enhanced CVD method,Sensors and Actuators B-Chemical145(2010)114–119.[25]D.Kohl,The role of noble metals in the chemistry of solid-state gas sensors,Sensors and Actuators B-Chemical1(1990)158–165.[26]P.P.Sahay,Zinc oxide thinfilm gas sensor for detection of acetone,Journal ofMaterials Science40(2005)4383–4385.[27]B.L.Zhu,D.W.Zeng,J.Wu,W.L.Song,C.S.Xie,Synthesis and gas sensitivity of In-doped ZnO nanoparticles,Journal of Materials Science-Materials in Electronics 14(2003)521–526.[28]K.W.Kim,P.S.Cho,S.J.Kim,J.H.Lee,C.Y.Kang,J.S.Kim,S.J.Yoon,The selec-tive detection of C2H5OH using SnO2–ZnO thinfilm gas sensors prepared bycombinatorial solution deposition,Sensors and Actuators B-Chemical123 (2007)318–324.[29]G.J.Li,X.H.Zhang,S.Kawi,Relationships between sensitivity,catalytic activity,and surface areas of SnO2gas sensors,Sensors and Actuators B-Chemical60 (1990)64–70.[30]T.Jinkawa,G.Sakai,J.Tamaki,N.Miura,N.Yamazoe,Relationship betweenethanol gas sensitivity and surface catalytic property of tin oxide sensors mod-ified with acidic or basic oxides,Journal of Molecular Catalysis A:Chemical155 (2000)193–200.BiographiesJian-Qun He is a postgraduate working in the area of gas sensors for master degree at Tianjin University of Technology.He obtained his B.Sc.degree in Physics from Ludong University in2009.Jing Yin graduated from Liaocheng University and received her B.Sc.degree in1989. Her research interests are in the growth of functional crystal materials and the preparation of nano-materials.Dong Liu is a postgraduate working in the area of gas sensors for master degree at Tianjin University of Technology.He obtained his B.Sc.degree in Environmental Science from North China University in2010.Le-Xi Zhang received his Ph.D.degree in materialogy in2011from Institute of Coal Chemistry,Chinese Academy of Sciences.His current research is focused on synthesis of semiconductor nanostructures and their gas-sensing applications.Feng-Shi Cai received his Ph.D.degree in2012from Nankai University.His current interest is gas-sensing materials fabrication and properties.Li-Jian Bie obtained his Master’s degree in Inorganic Chemistry from University of Science and Technology of China in1991,and Ph.D.degree in Inorganic Chemistry from Peking University in2002.He is now a professor in Tianjin University of Tech-nology,leading a group in research for the synthesis and property of nano-materials and perovskite-related materials,including their application in sensors.。
露点温度传感器发展趋势综述
露点温度传感器发展趋势综述聂晶,刘曦(北京航空航天大学仪器科学与光电工程学院,北京 100191)摘要:介绍了目前露点温度传感器领域的研究现状,阐述了光学式、谐振式、电学式、热学式、重量式、化学式露点温度传感器的原理及构造,指出光学式露点温度传感器测量精度极高,其中冷镜式露点仪可作为湿度计量标准;谐振式露点温度传感器具有体积小、成本低、响应时间短、灵敏度高、可靠性好的特点;电学式露点温度传感器灵敏度高、功耗小,便于实现小型化、集成化;重量法是准确度最高的湿度绝对测量方法;化学法常用来测量低湿环境下的有机混合气体。
探讨了露点温度传感器在环境监测、工业制造、医疗诊断等领域的应用情况,指出未来露点温度传感器将会向高精度、高稳定性、高响应的方向发展,且应用范围将进一步拓展,以满足极端环境下的测量需求。
关键词:湿度测量;露点温度传感器;湿度传感器中图分类号:TB94;TP212 文献标志码:A 文章编号:1674-5795(2024)01-0043-17Review of the development trends of dew point temperature sensorsNIE Jing, LIU Xi(School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China) Abstract: Introducing the current research status in the field of dew‐point temperature sensors, and expounding the principles and structures of optical, resonant, electrical, thermal, weight and chemical dew‐point temperature sensors. It is pointed out that the optical dew point temperature sensor has high measurement accuracy, and the cold mirror dew point sensor can be used as the humidity measurement standard. The resonant dew point temperature sensor has the characteris‐tics of small size, low cost, short response time, high sensitivity and good reliability. The electrical dew point temperature sensor has high sensitivity and low power consumption, which is convenient for miniaturization and integration. Gravimetric method is the most accurate absolute humidity measurement method and the basis for establishing humidity benchmark. Chemical methods are often used to measure organic gas mixtures in low humidity. The application of dew point tempera‐ture sensor in environmental monitoring, industrial manufacturing, medical diagnosis and other fields is discussed. It is pointed out that dew point temperature sensors will develop towards high precision, high stability and high response in the future, and their application range will be further expanded to meet the measurement needs in extreme environments.Key words: humidity measurement; dew point temperature sensor; humidity sensor0 引言湿度表示大气中水汽含量的多少,即大气的干、湿程度。
Sensors and Actuators A
Sensors and Actuators A: PhysicalVolume 132, Issue 1, 8 November 2006, Pages 147–153The 19th European Conference on Solid-State TransducersA thermal convective accelerometer system based on a siliconsensor—Study and packaging∙a Technologi c al Educational Institution (TEI) of Athens, Department of Electroni c s, 12210 Egaleo, Athens, Greece∙∙∙∙∙liquids. The effect of the different liquid viscosities on the sensor characteristics was examined. The dependence of the accelerometer signal on both frequency and acceleration was determined for various configurations. It was found that depending on the packaging configuration the 3 db cut-off signal can be adjusted from some Hertz to several hundreds of Hertz. The sensitivity of the device as well as the accuracy of the waveform shapes can also be adjusted by regulating specific packaging parameters. A specially designed electronic interface was implemented for interface and controlling the input and output signals of the accelerometer. Different modes of operation were considered in order to improve the long term stability of the device.Keywords∙Thermal sensor;∙Accelerometer;∙Packaging;∙Interface circuitFig. 1. Experimental set-up, used for PSTA characterization.View in workspaceFig. 2. PSTA tank-shaped housing.View in workspaceFig. 3. PSTA response at 1 Hz square pul s es of 2 g acceleration for two oil types in the CFP case.View in workspaceFig. 4. PSTA response at 1 Hz square pul s es of 2 g acceleration for two oil types in the PView in workspaceView in workspacefunction of frequency forView in workspaceFig. 8. Normalized sensitivity of the PSTA for 2 g acceleration, as a function of frequency for different oil types and package configurations.View in workspaceFig. 9. PSTA background signal and heating resistance variations for 17 h of operation in constant voltage mode. The voltage applied to the sensor was of 12 V.View in workspaceFig. 10. Block diagram of the interface circuit.View in workspaceFig. 11. PSTA background signal and heating resistance variations for 22 h of operation in constant powerView in workspacebackground signal and heating resistanceView in workspaceCopyright © 2006 Elsevier B.V. All rights reserved.Dr. Grigoris Kaltsas received BSc degree in Physics from National University of Athens in 1993. He joined the Institute of Microelectronics of NCSR “Demokritos” in 1993 as a PhD student and he received his PhD in the field of thermal integrated sensors, from the TechnicalUniversity of Athens, in 1999. He has worked in the field of silicides from 1993 to 1994 and then on fabrication and characterization of thermal integrated sensors using porous silicon technology, focusing in the field of flow and acceleration sensors. He is now as sistant professor in the technical Institution of Athens (TEI).Dr. Dimitris Goustouridis was born in 1969. He received the BS in 1992 from the Department of Physics of the University of Patras. In 2002 he received the PhD degree in microelectronics from the Department of Applied Sciences of National Technical University of Athens for his work on capacitive type pressure sensors. He is currently with the Institute of Microelectronics at NCSR “Demokritos”. His interests include silicon sensors and pressure s ensors in particular, and silicon micromachining.Dr. Androula Nassiopoulou is the director of the Institute of Microelectronics (IMEL) at NCSR Demokritos since 1997. IMEL is the Greek National Center of Excellence in Micro, Nanotechnologies and Systems. Her current research interests are in the field of semiconductor nanostructures for nano- and optoelectronic devices, nanocrystal memories, sensing, etc. and in the field of silicon sensors and microfluidics. She is at the head of the group on silicon nanostructures and their applications at IMEL. She is member of the Advisory group of experts on Nanotechnology (NMP) of the EU 6th Framework Program for Research and Technology and she coordinates an important number of EU and national research projects in the above fields. She chaired or co-chaired several National and International Conferences and Symposia, including two successful E-MRS Symposia related with nanostructured semiconductors. For more information please see at www.imel.demokritos.gr.FDr. Grigoris Kaltsas received BSc degree in Physics from National University of Athens in 1993. He joined the Institute of Microelectronics of NCSR “Demokritos” in 1993 as a PhD student and he received his PhD in the field of thermal integrated sensors, from the Technical University of Athens, in 1999. He has worked in the field of silicides from 1993 to 1994 and then on fabrication and characterization of thermal integrated sensors using porous silicon technology, focusing in the field of flow and acceleration sensors. He is now assistant professor in the technical Institution of Athens (TEI).Dr. Dimitris Goustouridis was born in 1969. He received the BS in 1992 from the Department of Physics of the University of Patras. In 2002 he received the PhD degree in microelectronics from the Department of Applied Sciences of National Technical University of Athens for his work on capacitive type pressure sensors. He is currently with the Institute of Microelectronics at NCSR “Demokritos”. His interests include silicon sensors and pressure sensors in particular, and silicon micromachining.Dr. Androula Nassiopoulou is the director of he Institute of Microelectronics (IMEL) at NCSR Demokritos since 1997. IMEL is the Greek National Center of Excellence in Micro, Nanotechnologies and Systems. Her current research interests are in the field of semiconductor nanostructures for nano- and optoelectronic devices, nanocrystal memories, sensing, etc. and in the field of silicon sensors and microfluidics. She is at the head of the group on silicon nanostructures and their applications at IMEL. She is member of the Advisory group of experts on Nanotechnology (NMP) of the EU 6th Framework Program for Research and Technology and she coordinates an important number of EU and national researchprojects in the above fields. She chaired or co-chaired several National and International Conferences and Symposia, including two successful E-MRS Symposia related with nanostructured semiconductors. For more information please see at www.imel.demokritos.gr.The following popper user interface control may not be accessible. Tab to the next button to revert the control to an accessible version.Destroy user interface controlDisplay Settings:AbstractThe following popper user interface control may not be accessible. Tab to the next button to revert the control to an accessible version.Destroy user interface controlSend to:Sensors (Basel). 2012;12(1):233-59. doi: 10.3390/s120100233. Epub 2011 Dec 28.A theoretical model to predict both horizontal displacement andvertical displacement for electromagnetic induction-based deep displacement sensors.Shentu N, Zhang H, Li Q, Zhou H, Tong R, Li X.SourceState Key Laboratory of Industry Control Technology, Zhejiang University, Hangzhou, Zhejiang 310027, China. stnying_2@AbstractDeep displacement observation is one basic means of landslide dynamic study and early warning monitoring and a key part of engineering geological investigation. In our previous work, we proposed a novel electromagnetic induction-based deep displacement sensor (I-type) to predict deep horizontal displacement and a theoretical model called equation-based equivalent loop approach (EELA) to describe its sensing characters. However in many landslide and related geological engineering cases, both horizontal displacement and vertical displacement vary apparently and dynamically so both may require monitoring. In this study, a II-type deep displacement sensor is designed by revising our I-type sensor to simultaneously monitor the deep horizontal displacement and vertical displacement variations at different depths within a sliding mass. Meanwhile, a new theoretical modeling called the numerical integration-based equivalent loop approach (NIELA) has been proposed to quantitatively depict II-type sensors' mutual inductance properties with respect to predicted horizontal displacements and vertical displacements. After detailed examinations and comparative studies between measured mutual inductance voltage, NIELA-based mutual inductance and EELA-based mutual inductance, NIELA has verified to be an effective and quite accurate analytic model for characterization of II-type sensors. The NIELA model is widely applicable for II-type sensors' monitoring on all kinds of landslides and other related geohazards with satisfactory estimation accuracy and calculation efficiency.PMID:22368467[PubMed - indexed for MEDLINE]PMCID:PMC3279211Free PMC ArticleImages from this publication.See all images (12) Free textThe following toggler user interface control may not beaccessible. Tab to the next button to revert the control to an accessible version.Destroy user interface control Publication Types, MeSH Terms Publication Types∙Research Support, Non-U.S. Gov'tMeSH Terms∙Electricity∙Electromagnetic Phenomena*∙Geology/instrumentation*∙Landslides*∙Models, Theoretical*∙Numerical Analysis, Computer-Assisted∙Photography∙Reproducibility of ResultsThe following toggler user interface control may not be accessible. Tab to the next button to revert the control to an accessible version.Destroy user interface control LinkOut - more resourcesFull Text Sources∙Europe PubMed Central∙PubMed Central∙PubMed Central CanadaOriginal ArticleA tactile sensor for detection of physical properties of human skin in vivo1998, V ol. 22, No. 4 , Pages 147-153∙PDF (1290 KB)∙PDF Plus (413 KB)∙Reprints∙PermissionsO. A. Lindahl1, S. Omata2 and K.A. ängquist31Departments of Biomedical Engineering, University Hospital of Northern Sweden, S-901 85, Umeå, Sweden2Departments of Surgery, University Hospital of Northern Sweden, S-901 85, Umeå, Sweden3College of Engineering, Nihon University, Koriyama Fukushima, 963, JapanA spring loaded tactile sensor with displacement sensing has been evaluated for non-invasive assessment of physical properties, stiffness and elasticity, of human skin in vivo. The tactile sensor consists of a piezoelectric vibrator (61 kHz) with a vibration pickup, electronics and PC with software for measurement of the change in frequency when the sensor is attached to an object. Integrated with the tactile sensor is a displacement sensor that shows the compression of the spring that loads the sensor element against the object during measurement. Under certain conditions (e.g. fixed contact pressure) this change in frequency monitors the acoustic impedance of the object and is related to the stiffness of soft tissue. The experimental results on silicone gum and on healthy Japanese and Swedish women indicated that the instrument was able to detect changes in stiffness and elastic related properties of human skin, related to age, day-to-day variations and application of cosmetics. The instrument was concluded to be easy to handle and suitable for field work.∙PDF (1290 KB)∙PDF Plus (413 KB) - What is PDF Plus?Read More: /doi/abs/10.3109/03091909809032532Issue TOC | Previous Article | Next ArticleOriginal ArticlesDesign of inductive sensors for tongue control system for computers and assistive devicesJuly 2010, V ol. 5, No. 4 , Pages 266-271 (doi:10.3109/17483101003718138)∙HTML∙PDF (989 KB)∙PDF Plus (990 KB)∙Reprints∙PermissionsEugen R. Lontis, Lotte N. S. A. StruijkDepartment of Health Science and Technology, Center for Sensory Motor Interaction, SMI, Aalborg, DenmarkE. R. Lontis, Department of Health Correspondence: Science and Technology, Center for Sensory Motor Interaction, SMI, Fredrik Bajers V ej 7, D3, 9220 Aalborg East, Denmark. E-mail: lontis@hst.aau.dkPurpose.The paper introduces a novel design of air-core inductive sensors in printed circuit board (PCB) technology for a tongue control system. The tongue control system provides a quadriplegic person with a keyboard and a joystick type of mouse for interaction with a computer or for control of an assistive device.Method.Activation of inductive sensors was performed with a cylindrical, soft ferromagnetic material (activation unit). Comparative analysis of inductive sensors in PCB technology with existing hand-made inductive sensors was performed with respect to inductance, resistance, and sensitivity to activation when the activation unit was placed in the center of the sensor. Optimisation of the activation unit was performed in a finite element model.Results.PCBs with air-core inductive sensors were manufactured in a 10 layers, 100 μm and 120 μm line width technology. These sensors provided quality signals that could drive the electronics of the hand-made sensors. Furthermore, changing the geometry of the sensors allowed generation of variable signals correlated with the 2D movement of the activation unit at the sensors' surface.Conclusion.PCB technology for inductive sensors allows flexibility in design, automation of production and ease of possible integration with supplying electronics. The basic switch function of the inductive sensor can be extended to two-dimensional movement detection for pointing devices.KeywordsPrinted circuit board inductor, assistive devices, disabled people, tongue control, keyboard and pointing devices, computer interface∙HTML∙PDF (989 KB)∙PDF Plus (990 KB) - What is PDF Plus?Read More: /doi/abs/10.3109/17483101003718138Analog Integrated Circuits and Signal ProcessingJune 2006, V olume 47, Issue 3, pp 293-301A high precision temperature control system for CMOS integrated wide range resistive gas sensors∙Giuseppe Ferri,∙Vincenzo StornelliLook Inside Get AccessAbstractIn this work we present an integrated interface for wide range resistive gas sensors able to heat the sensor resistance through a constant power heater block at 0°C–350°C operating temperatur es. The proposed temperature control system is formed by a sensor heater (which fixes the sensor temperature at about 200°C), a R/f (or R/T) converter, which converts the resistive value into a period (or frequency), and can be able to reveal about 6 decades variation (from 10 KΩ up to 10 GΩ), and a digital subsystem that control the whole systems loop. This interface allows high sensibility and precision and performs good stability in temperature and power supply drift and low power characteristics so it can be used also in portable applications. Test measurements, performedon the fabricated chip, have shown an excellent agreement between theoretical expectations and simulation results.Giuseppe Ferri is an associate professor in Electronics at the Department of Electrical Engineeri ng of L’ Aquila University, Ital. In 1993 he has been a visiting researcher at SGS-Thomson Milano, working in bipolar low-voltage op-amp design. In 1994-95 he has been visiting researcher at KU Leuven working in low-voltage CMOS design in the group of Prof. Sansen. His research activity is actually centred on the analog design of integrated circuits for portable applications (e.g., sensors and biomedicals) and circuit theory. He is co-author of a book entitled “Low Voltage, Low Power CMOS Current Conveyors”, Kluwer ed. (2003) and four text-books in Italian on Analogue Microelectronics (2005, 2006). Moreover, he is author and co-author of 74 papers on international and Italian journals and 123talks at national and international conferences.Vincenzo Stornelli was born in A vezzano (AQ), Italy, on May 31, 1980. He received the Electronics Engineering degree (cum laude) in July 2004. In October 2004 he joined the Department of Electronic Engineering, University of L’Aquila, where he is actually involved with problems concerning project and design of integrated circuits for RF and sensor applications, CAD modelling, characterization, and design analysis of active microwave components, circuits, and subsystems. He regularly teaches courses of the European Computer patent and has regular collaborations with national corporations such as Thales ItaliaPage %PClose Plain textLookInsideShareShare this content on Facebook Share this content on Twitter Share this content on LinkedIn Other actionsExport citations∙Register for Journal Updates ∙About This Journal∙Reprints and Permissions。
传感器英文课件第1章-basic knowledge
Transducers, Sensors, and Actuators
Transducer: converts a signal from one physical form to a corresponding signal having a different physical form “energy converter” (mechanical, thermal, magnetic, electric, chemical, and radiation) Sensor: offering an electric output A sensor may not be a transducer. modifier Input transducers (physical signal/electric signal) are termed sensors, or detectors for radiation, output transducers (electric signal/display or actuation) are termed actuators or effectors.
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1.4 Static aracteristics of Measurement Systems
Accuracy, Precision, and Sensitivity
Accuracy is the quality that characterizes the capacity of a measuring instrument for giving results close to the true value of the measured quantity. Sensor accuracy is determined through static calibration. It consists of keeping constant all sensor inputs, except the one to be studied. Error: Any discrepancy between the true value for the measured quantity and the instrument reading. Absolute error: the difference between measurement result and the true value.
传感器与检测技术英文书籍英语
传感器与检测技术英文书籍英语Sensors and Detection Technologies.Sensors and detection technologies are essential components of modern instrumentation and control systems. They provide the means to measure and monitor physical, chemical, and biological parameters, and transmit this information to other devices for processing and analysis.There is a wide variety of sensors and detection technologies available, each with its own unique set of capabilities and limitations. The choice of sensor for a particular application depends on factors such as the parameter to be measured, the desired accuracy and precision, the operating environment, and the cost.Some of the most common types of sensors include:Temperature sensors measure the temperature of a substance. They can be based on a variety of principles,including thermocouples, resistance temperature detectors (RTDs), and thermistors.Pressure sensors measure the pressure of a gas or liquid. They can be based on a variety of principles, including strain gauges, diaphragms, and piezoresistive elements.Flow sensors measure the flow rate of a gas or liquid. They can be based on a variety of principles, including differential pressure, thermal dispersion, and ultrasonic waves.Level sensors measure the level of a liquid or solidin a tank or other container. They can be based on avariety of principles, including float switches, ultrasonic waves, and capacitance probes.Gas sensors measure the concentration of a gas in a sample. They can be based on a variety of principles, including electrochemical cells, semiconductor sensors, and optical sensors.Chemical sensors measure the concentration of a chemical species in a sample. They can be based on avariety of principles, including ion-selective electrodes, potentiometric sensors, and amperometric sensors.Biological sensors measure the presence or concentration of a biological molecule in a sample. Theycan be based on a variety of principles, including immunoassays, DNA hybridization, and protein binding assays.Detection technologies are used to convert the outputof a sensor into a digital signal that can be processed and analyzed by a computer or other device. Some of the most common types of detection technologies include:Analog-to-digital converters (ADCs) convert an analog signal into a digital signal.Digital-to-analog converters (DACs) convert a digital signal into an analog signal.Counters count the number of pulses or events that occur over a period of time.Timers measure the duration of a period of time.Data acquisition systems collect and store data from sensors and other devices.Sensors and detection technologies are used in a wide variety of applications, including:Industrial automation.Medical diagnostics.Environmental monitoring.Military and defense.Scientific research.The development of new sensors and detectiontechnologies is an active area of research and development. New sensors are being developed to measure a wider range of parameters with greater accuracy and precision. New detection technologies are being developed to improve the signal-to-noise ratio and reduce the cost of data acquisition systems.The continued development of sensors and detection technologies will enable new and innovative applications in a wide variety of fields.。
New single chip Hall sensor for three phases brushless motor control
Ž.Sensors and Actuators812000320–323www.elsevier.nl r locate r sna New single chip Hall sensor for three phases brushless motor controlF.Burger),P.-A.Besse,R.S.PopovicEPFL-Institute of Microsystems,Swiss Federal Institute of Technology Lausanne,1015Lausanne,SwitzerlandAbstractA novel three branches vertical Hall sensor for brushless motor control is presented in this paper.The sensor gives three position signals phase shifted by1208,corresponding to the motor driving signals.The single chip integration on a1.7=1.7mm2silicon chip assures homogeneous characteristics for the three branches of the sensor.A packaged module of magnetic encoder has been realized and successfully tested on a5mm diameter micromotor at a speed up to90,000rpm.Based on the obtained signals,a simplified feedback driving principle for brushless motor is proposed.q2000Elsevier Science S.A.All rights reserved.Keywords:Motor control;Brushless motor;Hall sensor;Angular position1.IntroductionNowadays,miniaturized brushless motors are intro-duced in many ually,Hall sensors are usedw xin such motors1,2to provide the information about the rotor orientation to the motor’s control unit.Such an information is used to improve the performances of the brushless motor.A complex signal processing is often usedŽ.to link the sensor s to the motor,due to the type of sensor signals.In this paper,we present the design,realization, packaging,and characterization of a new single chip Hall sensor which is able to provide three signals with a phase shift of1208.The corresponding phase relation between these signals and the required driving signals of the three phases brushless motor can help to simplify and therefore, to improve the motor control itself.In order to illustrate the advantages of our new sensor,its use in a feedback loop is proposed.2.Principle of the sensorThe connecting principle between the brushless motor and the new sensor is reminiscent of the miniaturizedw x magnetic angular encoder based on the3-D Hall sensor3.A permanent magnet is fixed at the end of a rotary shaft,in our case,the rotor of the motor.The magnetic sensor is placed below.The permanent magnet creates a magnetic)Corresponding author.Fax:q41-21-693-66-70;E-mail:frederic.burger@epfl.ch field parallel to the sensor surface and this surface corre-sponds to the sensitive directions of the magnetic sensor.Three phases brushless motors need three signals with a phase shift of1208for its control.Then,a closed-loop regulation may be used to improve the motor perfor-mances.In order to avoid complex signal processing,weŽdevelop a new three branches integrated Hall sensor Fig. .1a.Each branch could be interpreted as a half of a vertical Ž.Hall sensor Fig.1b and is rotated by1208in comparison to the other.Only a half of a vertical Hall sensor is used since little space is available for the electrical contacts. Only five contacts are needed for this sensor,two for the supply voltage and three to extract the Hall voltages.The flexibility of the vertical Hall technology allows such aw xsensor configuration4.This new sensor automatically creates three signals phase shifted by1208.They directly correspond to the motor driving signals.This similarity will considerably simplify the motor control in a closed-loop configuration. Our new sensor can be used with different regulation principles.One of them will be sketched below as an illustration of such an application.A drawing of a three branches Hall device used as angular position sensor for brushless motor control is given on Fig.2.3.Realization and resultsŽ.This three branches device is manufactured Fig.3a using the standard technology for vertical Hall elements w x4.The symmetrical shape of the aluminum lines and the contacts through the oxide are designed so as to cancel out0924-4247r00r$-see front matter q2000Elsevier Science S.A.All rights reserved.Ž.PII:S0924-42479900101-6()F.Burger et al.r Sensors and Actuators 812000320–323321Ž.Ž.Fig.1.a Schematic representation of the three branches Hall sensor.b Insert:each branch could be understood as a half of a Hall sensor.asymmetrical mechanical stress in the structure.The real-ized sensor has been mounted on a Printed Circuit Board Ž.Ž.PCB with a diameter of 5mm Fig.3b .The small volume of this assembling is useful for miniaturized mo-w x tors 5.Fig.4shows this sensor packaged and assembled at the rear of a three phases brushless micromotor.In order to cancel out offset and non-linear effects as good as possible,a differential signal processing has been Ž.chosen.The output signals V1,V2,V3are obtained by differential amplifications of the Hall voltages of each pair of sensor branches as shown on Fig.5.In order to reduce the offset drift with temperature,the sensor is polarized with a constant voltage between the current input and output electrodes.On the same figure,a simple illustration of a possible motor control principle is reported.The angular position signals mixed with the corresponding driving signals serve to control the motor in a closed-loop configuration.This rough principle is only an illustration of the usefulness of the new sensor.Note that in such case,the phases between the angular position signals and the driving signals have to be fixed.This implies that a first alignment is to be realized between the rotor and the permanent magnet.A second alignment should then be Ž.carried out between the stator and the Hall sensor Fig.2.Figs.6–9give the measurement results obtained using the differential signal processing.Due to the singlechipFig.2.This figure represents the three branches vertical Hall device mounted as angular position sensor for brushless motor control.A first alignment is to be done between the rotor orientation and the permanent magnet,and a second alignment is to be done between the stator and the sensor.This alignment will allow to combine directly the motion informa-tion for the motor with the information about its shaft angular position.integration,the direct magnetic sensitivities of each direc-Ž.Žtion Fig.6are very similar S (S (S (211V1V2V3.mV r mA T .They differ only by less than 0.3%intheŽ.Fig.3.a Picture of the realized three branches vertical Hall sensor.Each branch is shifted by 1208with a very good accuracy due to the microelec-2Ž.tronic technology.The size of the chip is 1.7=1.7mm .b The three branches Hall sensor mounted on circular PCB with a diameter of 5mm.This small volume is important for the use of this sensor with miniatur-ized brushless motor.()F.Burger et al.r Sensors and Actuators 812000320–323322Fig.4.Picture of the closed-loop sensor packaged at the rear of a three phases brushless micromotor.Its diameter is 5mm.Fig.5.Sensor signal processing used to obtain three differential signals with a phase shift of 1208.There are several ways to combine the signals from the sensor with the driving signals,the simplest being represented here.relevant region of 0-B -0.4T.Some non-linearities appear from about 1T.At 1.6T,a difference of about 3%has been measured.This effect can be easily canceledoutFig.6.Measured direct sensitivities of the three main directions of the sensor.The integration of this three branches sensor in a single chip gives a very good reproducibility of these three curves.The sensor has a good Ž.linearity for its working range 0-B -0.4T .Some non-linearities appear from about 1T.Fig.7.Measured signals for a 3608rotation of the sensor in a homoge-neous magnetic field of 0.21T.The measurements have been performed with a constant voltage between input and output currentelectrodes.Fig.8.Measured amplitude of the output voltages V ,V ,and V PP1PP2PP3of the three branches sensor vs.angular velocity.The variations of these curves are not coming from the frequency limitation of the sensor,they are due to the thermal influences of the motor on the permanent magnet Ž.and on the sensor offset and sensitivity .by an appropriate electronic circuit.For our specific appli-cation,the sensitivities of the sensor are enough linearinFig.9.Dynamic angular position measurement of a brushless micromotor with the three branches vertical Hall sensor fixed at his rear side.The motor speed is approximately 90,000rpm,which is his speed limit.()F.Burger et al.r Sensors and Actuators812000320–323323Ž.the required working range0to0.4T without extra signal processing.The results displayed in Fig.7have been performed for a3608rotation of the sensor in a homogeneous magnetic field.The use of microelectronic technology guarantees the shift between each branch to be of precisely1208.This allows an accurate phase shift between the three output signals as required for optimal motor control.Fig.8represents the dependency of the output signals vs.the angular velocity when the sensor is assembled atŽ.the rear side of the motor Fig.4.The results show the peak-to-peak values of the output signals are not constant. This behavior is mainly due to the thermal effects on the permanent magnet and on the sensor.The temperature perturbation is created by the warming of the motor.This influence of the temperature on the peak-to-peak voltages can be cancelled by adding a temperature compensation inw xthe signal processing6.Such temperature variations do not appear in the case of a fast variation of the motor’sŽ.speed over its working range up to90,000rpm.In that case,no variations of the peak-to-peak voltage have been experimentally observed.Fig.9shows the dynamic angular position measurement taken with the packaged encoder of Fig.4.For this case, the motor rotates at his speed limit,which is90,000rpm. The parasitic effects on the sinus signals are due to cross-coupling between the electromagnetic part of the stator and the Hall sensor itself.4.ConclusionA new integrated vertical Hall sensor in a three branches configuration has been realized and successfully tested as angular position sensor for brushless motor.The single chip silicon integration assures precise alignment and ho-mogeneous characteristics of the three sensor branches. The packaged magnetic encoder delivers accurate position measurements at a speed up to90,000rpm which is the speed limit of the motor.The new Hall sensor has the minimal number of contacts,which is essential for the application in very small brushless motors.The three1208 phase shifted position signals are well-adapted for motor control.As application of our new device,a simple driving principle has been proposed.AcknowledgementsThe authors would like to thank Roulements Minia-tures,Bienne,Switzerland,for supplying the motor.This work has been supported by the Swiss priority program Minast6.05.Referencesw x1T.Bucella,Single-chip DSP controller IC provides high performance brushless DC servo,Powerconversion-and-Intelligent-Motion,Vol.18Ž.Ž.3March1992,pp.8,10–14.w x2S.Ellerthorpe,Effect of software speed-control algorithms on low-cost six-step brushless DC drives,Powerconversion-and-Intelligent-Mo-Ž.Ž.tion221199658–65.w x3 F.Burger,New fully integrated3-D silicon Hall sensor for preciseŽ.angular position measurements,Sensors and Actuators A671–3Ž.199872–76.w xŽ.4R.S.Popovic,Hall Effect Devices,in:B.E.Jones Ed.,Adam Hilger, New York,1991.w x5M.A.Gottschalk,Miniature motors deliver big performance,GlobalŽ.Design News,1997,pp.42–43.w x6Ch.Schott,High accuracy Analog Hall probe,IEEE Trans.Instr.Ž.Ž.Meas.4621996613–616.BiographiesFrederic Burger was born in Geneva,Switzerland,in1972.He has done ´´his technical studies in microengineering at the Ecole d’Ingenieurs de´Ž.Geneve EIG,Switzerland from1987until1992.He then studied `microengineering at the Swiss Federal Institute of Technology Lausanne Ž.EPFL,Switzerland from1992until1996.After his diploma work at EPFL,he started his PhD at the Institute of Microsystems,working in the field of angular position sensors using magnetic effects.Pierre-A.Besse was born in Sion,Switzerland,in1961.He received his diploma in Physics and his PhD on semiconductor optical amplifiers from the Swiss Federal Institute of Technology,ETH Zurich,in1986and 1992,respectively.In1986,he joined the group of micro-and optoelec-tronics of the Institute of Quantum Electronics at ETH Zurich,where he is engaged in research in optical telecommunication science.He worked on theory,modeling,characterization and fabrication of compound semi-conductor devices.In August1994,he joined the Institute of Microsys-Ž. tems at the Swiss Federal Institute of Technology at Lausanne EPFL as senior assistant,where he is starting activities on sensors and actuators microsystems.Actually,his major fields of interest are physical principals and new phenomena for optical,magnetic,inductive and strain sensors. He has been involved in international projects.He has written and co-authored over80scientific papers and conference contributions.He holds eight patent applications.Ž.Rade S.PopoÕic was born in Yugoslavia Serbia in1945.He obtained the Dipl.Ing.degree in applied physics from the University of Beograd, Yugoslavia,in1969,and the MSc and Dr.Sc.degrees in electronics from the University of Nis,Yugoslavia,in1974and1978,respectively.From 1969to1981,he was with Elektronska Industrija,Nis,Yugoslavia,where he worked on research and development of semiconductor devices and later became head of the company’s CMOS department.From1982to 1993,he worked for Landis and Gyr,Central R&D,Zug,Switzerland,in the field of semiconductor sensors,interface electronic,and microsys-tems.There,he was responsible for research in semiconductor device Ž.Ž.physics1983–85,for microtechnology R&D1986–90and was ap-Ž.pointed vice-president Central R&D in1991.In1994,he joined theŽ.Swiss Federal Institute of Technology at Lausanne EPFL as professor for microtechnology systems.He teaches Conceptual Products and Sys-tem Design and Microelectronics at the Department of Microengineering of the EPFL.His current research interests include sensors for magnetic, optical,and mechanical signals,the corresponding microsystems,physics of submicron devices,and noise phenomena.。
Peng_2008_Sensors-and-Actuators-B-Chemical
Sensors and Actuators B 133(2008)308–314Contents lists available at ScienceDirectSensors and Actuators B:Chemicalj o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /s nbPotentiometric response of ion-selective membranes with ionic liquids as ion-exchanger and plasticizerBo Peng a ,Jingwei Zhu b ,Xiaojie Liu a ,Yu Qin a ,∗a Department of Chemistry,Renmin University of China,Beijing 100872,ChinabInstitute for Chemical Physics,Beijing Institute of Technology,Beijing 100081,Chinaa r t i c l e i n f o Article history:Received 8December 2007Received in revised form 7January 2008Accepted 21February 2008Available online 4March 2008Keywords:Ion-selective electrode Ionic liquids Ion-exchanger PlasticizerPotentiometric sensora b s t r a c tRoom temperature ionic liquids (RTILs),based on imidazolium,pyridinium and phosphonium cations,have been studied as an anion-exchanger and plasticizer for poly(vinyl chloride)(PVC)-based potentiometric ion-selective membranes.1-Methyl-3-octylimidazolium chloride (MOImCl)and trihexyl-tetradecylphosphonium chloride (THTDPCl)can plasticize PVC to form flexible ion-sensing membranes.PVC–MOImCl membrane without additional ionophore and ion-exchanger demonstrated Nernstian response to sulfate ion with slope of 29.1mV/decade in the concentration range of 10−5to 10−1M.The ionophore-free membrane showed good selectivity toward SO 42−over Cl −,ClO 4−,NO 3−and SCN −.PVC–MOImCl-based electrode have fast response time within 10s and wide pH independent range (3–10).The proposed electrode was used for the determination of sulfate in drinking water samples with satis-factory results.On the other hand,PVC–THTDPCl membrane exhibited stable and Nernstian response to different anions and the selectivity followed the Hofmeister series.Additionally,THTDPCl was found to be a suitable alternative to the traditional anion-exchanger,TDMACl and can be used as ionic additives in ionophore-based ion-selective sensors.©2008Elsevier B.V.All rights reserved.1.IntroductionHighly selective chemical sensors based on molecular recogni-tion and extraction principles are a very important class of sensors.Ion-selective electrodes (ISEs)and optodes in particular have found widespread use in clinical laboratories and are being explored for numerous other applications [1,2].Traditionally,these sensors are based on hydrophobic plasticized polymeric membranes or films that are doped with one or more ionophores in addition to a lipophilic ion-exchanger that plays an important role to the sen-sor response.Ion-exchanger has a selectivity-modifying influence since its concentration in the membrane determines the amount of the exchangeable ions of opposite charge.Hence,by adjusting the molar ratio of ionic sites to ionophore so that the latter is present in excess with respect to the primary ion but in deficiency regarding the interfering ions,the selectivity behavior of ISEs can be improved [3].Various tetraphenylborate derivatives are currently used as cationic additives and lipophilic tetraalkylammonium salts such as tridodecyl methylammonium chloride (TDMACl)are suitable anion exchangers.The hydrophilic counterions of these lipophilic addi-tives are exchanged for the primary ion when the ISE is conditioned in specific aqueous solution.∗Corresponding author.Tel.:+861062512660;fax:+861062516444.E-mail address:qinyu01@ (Y.Qin).For ion-sensing membranes the hydrophobicity of the polymer can assure that spontaneous,non-specific electrolyte extraction from the sample is suppressed.At the same time,the membrane matrix must act as a solvent of low viscosity for all active sens-ing components in the film.Therefore in poly(vinyl chloride)(PVC)membranes it is essential to use external plasticizers (membrane solvents)that can reduce the glass transition temperature of the polymer to below room temperature,increase the elasticity of the polymeric membrane and aid in providing mechanical stability.Furthermore,plasticizers also provide a lipophilic environment within the membrane conducive for improving the solubility of electroactive species (e.g.ionophore and ion-exchanger)[1].For many years,the plasticizers applied in potentiometric sensors are organic solvents such as bis(2-ethylhexyl)phthalate,bis(2-ethylhexyl)sebacate,2-nitrophenyl octyl ether that originated from the plastic industry [4].In recent years,novel polymeric materials have been developed for making sensing membranes without any plasticizer [5–10].Application of plasticizer-free polymer can elim-inate the leaching of membrane solvent and sensing components so that the lifetime of the sensor can be improved.However,it was reported that the diffusion coefficient of plasticizer-free membrane is about two orders of magnitude smaller than that of plasticized PVC membrane [11,12],which may lead to longer response time of plasticizer-free ion sensors,especially for bulk optodes.Room temperature ionic liquids (RTILs)are a class of compounds containing organic cations and anions [13].They are liquid over a0925-4005/$–see front matter ©2008Elsevier B.V.All rights reserved.doi:10.1016/j.snb.2008.02.027B.Peng et al./Sensors and Actuators B133(2008)308–314309wide temperature range and usually exhibit negligible vapor pres-sure,which reduces the possibility of air pollution and loss of materials at ambient conditions.They are air and moisture sta-ble,nonflammable,non-explosive and have high thermal stability. ILs are highly solvating for both organic and inorganic materials. They usually have high electrical conductivity and possess a wide electrochemical window[14].Due to those unique properties,ILs have been successfully used in many applications,including replac-ing traditional organic solvents in chromatography and extraction [15–18],electroanalytical applications[14,19–21]and spectrome-try[22].Notably,due to their ion exchange and polymer plasticizing properties ILs are able to be used as a component in polymeric sensing devices[23–25].Up to date few articles have been published on the utiliza-tion of ILs in ion-selective electrodes or optodes.Shvedene et al. reported the application of BDMImTf2N and DEDPPTf2N in PVC and polymethyl methacrylate(PMMA)membranes[24].Although the membranes did not require any conventional plasticizer,they only exhibited sub-Nernstian response to highly lipophilic anions such as dodecylsulfate and no response reported to common hydrophilic anions.In another paper,Coll et al.observed the selectivity enhancement of sulfate ions by polyazacycloalkane-based(7.11wt.%)membrane(41.84wt.%of powdered PVC, 25.11wt.%of plasticizer NPOE)containing ionic liquid1-butyl-3-methylimidazolium hexafluorophosphate(BMImPF6)(25.94wt.%) [23].The authors observed that NPOE plasticized PVC membranes containing only BMImPF6,exhibited a very poor undefined sub-Nernstian response.Furthermore,a plasticized PVC membrane containing the ionophore without the ionic liquid lost sulfate ion selectivity completely.These results indicated that BMImPF6is essential for polyazacycloalkane-based SO42−electrode;however, the functions of the ionic liquid can hardly be explained by tradi-tional ISE theory.Herein,we reported the investigation of different ILs in ion-selective membranes in order to fully understand their functions as ion-exchanger and plasticizer in potentiometric sen-sors.2.Experimental2.1.ReagentsCation-exchanger sodium tetrakis[3,5-bis(trifluoromethyl) phenyl]borate(NaTFPB)was purchased from Dojindo Laboratories (Gaithersburg,MD)in highest quality.All salts and membrane components anion-exchanger tridodecylmethylammonium chlo-ride,high-molecular weight poly(vinyl chloride),o-nitrophenyl octyl ether(NPOE),bis(2-ethylhexyl)sebacate(DOS),tetrahy-drofuran(THF),1,3-[bis(3-phenylthioureidomethyl)]benzene (sulfate ionophore),ionic liquids1-butyl-3-methylimidazolium tetrafluoroborate(BMImBF4),1-butyl-3-methylimidazolium hexafluorophosphate,1-butyl-3-methylimidazolium hexafluo-rophosphate(BMImCl),1-butyl-4-methylpyridinium chloride (BMPCl),1-methyl-3-octylimidazolium chloride(MOImCl),tri-hexyltetradecyl phosphonium chloride(THTDPCl)were purchased from Fluka(Switzerland).The ionic liquids were further purified as reported[26].All aqueous solutions were prepared by dissolving the appropriate salts or diluting standard solutions as specified in nanopure-purified(18.2M cm)deionized water.2.2.Membrane preparation and EMF measurementsConventional ion-selective membranes were cast by dissolving the ionophore(20mmol/kg,if needed)and the lipophilic ion-exchanger salt TDMACl(5mmol/kg),together with PVC and the plasticizer DOS or NPOE(1:2by weight)to give a total cock-tail mass of140mg,in1.5mL of THF and pouring it into a glass ring(22-mm i.d.)fixed onto a glass slide with rubber bands.The solvent THF was allowed to evaporate overnight.Ion-selective membranes with ILs were prepared by mixing different amount of ILs,PVC and NPOE/DOS(1:2)in THF cocktail.Trihexyltetradecyl phosphonium chloride and1-methyl-3-octylimidazolium chloride plasticized PVC membrane was prepared with20wt.%ionic liq-uid and80wt.%PVC.After conditioning the electrodes overnight in a solution identical to the innerfilling solution,discs6mm in diameter were cut from the parent membranes and mounted into Philips electrode bodies(IS-561,Glasbl¨aserei M¨oller,Zurich, Switzerland).0.01M NaClO4(with10−4M NaCl),0.01M NaCl or 0.01M Na2SO4(with10−4M NaCl)was served as the condition-ing solution and the internalfilling solution of the assembled electrodes.All the electrode potential measurements of sets of at least three replicate membranes disks that were made from the same parent membrane were performed at laboratory ambi-ent temperature versus an Ag/AgCl reference electrode with a 1M LiOAc bridge electrolyte by PXSJ-216Ion Meter(Shanghai, China).To measure the pH response of the electrodes,the sample solu-tion containing10mM boric acid and10mM citric acid(adjusted to pH2with HCl)was dropwisely titrated with0.1M NaOH,while the pH was monitored with a calibrated glass electrode(PB-10, Sartorius,Goettingen,Germany).Drinking water samples with different sulfate concentrations were prepared by adding known amounts of sodium sulfate to blank sample.The working and reference electrodes were immersed in the samples and the concentrations of the analytes were deter-mined by direct potentiometry and using the standard addition technique.To measure the binding constants of the ionophore with sul-fate ion,sandwich membrane experiments were performed as reported[27,28].Briefly,two single membranes were prepared. One of the membranes contained ionic sites TDMACl or THTD-PCl,PVC and plasticizer,the other one had the same composition but with additional sulfate ionophore.Both of the two mem-branes were conditioned in0.01M sodium sulfate solutions and each was measured individually in symmetric cell with the inner filling solution and the sample solution(0.01M sodium sulfate) being identical.The differences of two single membrane potentials were within5mV.The sandwich membrane was made by press-ing two individual membranes(one without ionophore and one with the same components and sulfate ionophore)together imme-diately after blotting them individually dry with tissue paper to avoid an aqueous phase between the two membrane segments. The obtained sandwich membrane was visibly checked for air bubbles before mounting in the same electrode body with the ionophore-containing segment facing the sample solution.The potential difference between the sandwich membrane and sin-gle membrane was used to calculate the stability constant of the ionophore.2.3.SelectivitiesSelectivity coefficients were calculated using an unbiased sepa-rate solution method(SSM)[29]by recording separate calibration curves for all the interfering ions of interest.For PVC–MOImCl and sulfate ionophore-based membranes,the selectivity coefficients were calculated with SO42−as primary ions.For other membranes, Cl−was the primary ion.The selectivity coefficients were deter-mined by using potentials from the highest activities lying within the Nernstian range.310 B.Peng et al./Sensors and Actuators B133(2008)308–314Fig.1.Chemical structures of different ionic liquids,anion-exchanger TDMACl and plasticizer NPOE.3.Results and discussions3.1.Membrane compositionsAs a class of materials,ionic liquids are highly solvating for both organic and inorganic materials.To investigate the potential appli-cations of ILs in potentiometric ion-selective sensors,membranes containing PVC,plasticizers and different types of ILs(structures as shown in Fig.1)were prepared.It was found that imidazolium type of ionic liquids,1-butyl-3-methylimidazolium tetrafluoroborate, 1-butyl-3-methylimidazolium hexafluorophosphate and1-butyl-3-methylimidazolium chloride were not able to plasticize PVC, instead,by mixing them with PVC and conventional plasticizers (NPOE or DOS)we were able to prepare mechanically stable mem-branes.PVC–DOS membranes with different amount of ionic liquids showed decreasedfilm-forming stability,while PVC–NPOE(weight ratio1:2)membrane containing10wt.%ionic liquids are clear and homogenous with enough tensile strength.It is notable that 1-methyl-3-octylimidazolium chloride and trihexyltetradecylpho-nium chloride can plasticize PVC.Without additional plasticizer, the membranes prepared with PVC and MOImCl or THTDPCl exhib-ited goodfilm-forming property and elasticity.On the other hand, 1-butyl-4-methylpyridinium chloride has poor compatibility with PVC and it is difficult to form measurable membranes,even in solvent plasticized polymer matrix.Table1lists the composition of the membranes(Nos.1–7)with good mechanical stability and homogeneity.3.2.Ionic liquids as anion-exchanger in plasticized PVC membranesThe prerequisite for obtaining a theoretical response with ISE membranes is their permselectivity,which means that no sig-nificant amount of counterions may enter the membrane phase. To achieve this the so-called Donnan exclusion,counterions(ion exchangers)confined to the membrane must be present[1].The potentiometrically obtained selectivity of anion-exchanger trido-decyl methylammonium chloride-based membranes displays the Hofmeister series(ClO4−>SCN−>I−∼salicylate>NO3−>Br−> Cl−>HCO3−>CH3COO−>SO42−>HPO42−).For such electrode,the anion selectivity sequence is solely related to the relative anion partition coefficients between water and membrane phases[1].Ionic liquids are consisted of bulky organic cations and inorganic anions.Potentiometric responses of PVC–NPOE membranes with four different ionic liquids were briefly described and compared in Table1.Firstly,BMImPF6-based membrane1was conditioned in 0.01M NaCl solution overnight before the electrode was titrated with different anions.EMF values of the electrodes were sta-ble for each measurement that indicated the exudation of the ionic liquids was negligible after overnight conditioning.How-ever,no obvious response toward anions or cations was observed for the electrodes.It is well known that ion-selective electrode containing anion-exchanger exhibits the Hofmeister series.The extraction of lipophilic anions into organic membrane is relatively easy,while highly hydrophilic anions such as sulfate and phos-phate are poorly extracted from an aqueous solution.Consequently, it is difficult to exchange lipophilic ions out of the membrane phase by more hydrophilic ones.BMImPF6-based PVC–NPOE mem-branes that has been used to prepare selective sulfate ISE[23]were further soaked in10−2M NaClO4.After conditioning the mem-brane showed some potentiometric response toward lipophilic anions with severely sub-Nernstian slopes(−21.8mV/decade for benzoate,−38.3mV/decade for salicylate and−25.1mV/decade for saccharin ions),however,the membrane had no response to other anions including NO3−,Cl−and SO42−.Similar results were observed for BMImBF4-based PVC–NPOE membrane2.After con-ditioning in10−2M NaClO4solution,such membrane showed weak responses to some lipophilic anions including ClO4−,PhCOO−,sal-icylate and saccharin anions in a rather narrow range.The EMF changes are less than40mV during the entire titration range from10−6to0.1M.These results indicated that the cationic part of the BMImBF4and BMImPF6are lipophilic enough to stay in the membrane phase,while the anionic BF4−and PF6−can par-tially be exchanged by more lipophilic anions.Similar results had been reported that ion-selective membranes containing dode-cylethyldiphenylphosphonium bistrifluoromethanesulfonimidate demonstrated potentiometric response toward dodecylsulfate (slope:53mV/dec)and salicylate(slope:44mV/dec)[24],but no data reported for less lipophilic anions.The results suggested that the ionic liquids with large anions might not be suitable for prepa-ration of ion-exchanger-based ISEs especially for the measurement of biologically important hydrophilic anions such as Cl−,SO42−and phosphate ion.We further focused our work on the ionic liquids with chloride ion as anionic counter ion.Membrane3with BMImCl exhibited unstable response mainly due to the high solubility of BMImCl inTable1Compositions of mechanically stable PVC membrane studied in this work and their potentiometric responsesMembrane no.Membrane composition Potentiometric responseIonic liquid PVC(%)NPOE(%)110%BMImBF43060Stable and sub-Nernstian response to lipophilic anions;no response to Cl−,SO42−210%BMImPF63060Stable and sub-Nernstian response to lipophilic anions;no response to Cl−,SO42−310%BMImCl3060Unstable response410%MOImCl3060Stable and sub-Nernstian response to Cl−,SO42−,ClO4−,salicylate510%THTDPCl3060Stable and Nernstian response to Cl−,SO42−,ClO4−,salicylate620%MOImCl800Stable and Nernstian response to SO42−,sub-Nernstian response to other anions 720%THTDPCl800Stable and Nernstian response to Cl−,SO42−,ClO4−,salicylateB.Peng et al./Sensors and Actuators B133(2008)308–314311Fig. 2.Response curves of PVC–NPOE membrane containing10wt.%THTDPCl (membrane5)toward SO42−, ;Cl−, ;salicylate,᭹;ClO4−, after conditioning in 0.01M NaCl solution.aqueous solution.Membrane4that was prepared with MOImCl and PVC–NPOE exhibited responses to Cl−,SO42−,ClO4−,PhCOO−, salicylate-and saccharin anions after conditioning overnight in 0.01M NaCl solution,however,the response slopes were all sub-Nernstian.Although the PVC–NPOE membranes with10wt.% imidazolium type of ILs appeared goodfilm-forming property,this kind of ionic liquids may not be well compatible with NPOE and lead to inferior potentiometric response and selectivity of the sensors.On the other hand,membrane5containing PVC,NPOE and 10wt.%THTDPCl exhibited stable and Nernstian responses to dif-ferent anions from10−5M to10−1M concentration range even for SO42−and Cl−(Fig.2).The response slopes were−30.2mV/decade for SO42−,−58.7mV/decade for Cl−,−61.4mV/decade for ClO4−and−62.0mV/decade for salicylate,respectively.As shown in Table2,the selectivity of THTDPCl-based PVC–NPOE membranes displays the Hofmeister series and similar values compared to TDMACl-based ion-exchanger membrane.It can also be found that the membranes containing THTDPCl as anionic exchangers showed less perchlorate selectivity.It was reported that ionic liquids are able to increase the dielectric constant of the membrane that could make the highly hydrophilic anions such as SO42−easier to be extracted from the water into the membrane phase[23].The overall potentiometric sensing property of the THTDPCl-based membranes is similar to that of membranes with TDMACl.3.3.Ionic liquids as both plasticizer and ion-exchangerAlthough satisfactory results can be obtained from THTDPCl-based PVC membrane with NPOE as plasticizer,the applications of many of traditional plasticizers are often associated with anum-Fig.3.Response curves of PVC–THTDPCl membrane7without additional plasticiz-ers toward SO42−, ;Cl−, ;salicylate,᭹;ClO4−, after conditioning in0.01M NaCl solution.ber of potential problems including limited compatibility,poor stability at high temperatures or under UV radiation,diminished lubricity at low temperatures andflammability[30–33].Reduced plasticizer content resulted from evaporation and exudation may also decrease the solubility of the ionophore and the ion-exchanger within the membrane,thus causing a marked decrease in sensitiv-ity and selectivity[32,34].Ionic liquids are one of the few novel alternatives to traditional plasticizer that have shown promising results in the early stages of investigation.It was recently reported that polyvinyl chloride can be plasticized by phosphonium-based ionic liquids[24,35].In this work we found that MOImCl and THT-DPCl can plasticize PVC and form sensing membranes with good film-forming property and elasticity.However,PVC membranes based on MOImCl or THTDPCl exhibited drastically different poten-tiometric response and selectivity.As shown in Fig.3,PVC–THTDPCl membrane exhibited Nernstian or nearly Nernstian responses to different anions in measuring ranges from10−5M to10−1M,and the slopes were−26.7mV/decade for SO42−,−55.1mV/decade for Cl−,−57.8mV/decade for ClO4−,−61.2mV/decade for salicylate and −61.0mV/decade for saccharin.The response range and selectiv-ity sequence of this NPOE-free membrane is comparable to the traditional PVC–NPOE membrane containing TDMACl(Table2). Less selectivity for lipophilic anions such as ClO4−and salicy-late was also observed for PVC–THTDPCl membrane.Obviously,in such membrane the IL has dual functions of both plasticizer and ion-exchanger.In contrast to THTDPCl,PVC–MOImCl membrane exhibited much improved SO42−selectivity.As shown in Fig.4after conditioning in Na2SO4solution the membrane responded to SO42−from10−5M to10−1M with Nernstian slope29.1mV/decade,while slopes for other anions are all sub-Nernstian and the membrane showed better selectivity toward SO42−than sulfate ionophore I-Table2Slopes and selectivity comparison of PVC–NPOE membranes with THTDPCl(membrane5)or TDMACl and NPOE-free PVC–THTDPCl membrane7Ion J Membrane5(THTDPCl/PVC–NPOE)Membrane7(PVC–THTDPCl)PVC/NPOE TDMAClSlope(mV/dec)log K potCl,J Slope(mV/dec)log K potCl,JSlope(mV/dec)log K potCl,JSO42−−30.2±0.8−1.67±0.2−26.7±1.8−1.53±0.3−28.9±1.0−1.45±0.1 Cl−−58.7±1.20−55.1±1.20−50.8±1.50 Salicylate−−62.0±1.4 2.64±0.2−61.2±0.6 2.57±0.2−62.7±0.6 3.65±0.3 ClO4−−61.4±1.0 3.93±0.3−57.8±1.0 3.79±0.1−62.0±1.7 5.2±0.2 Conditioning and innerfilling solution:0.01M NaCl;primary ion:Cl−.312 B.Peng et al./Sensors and Actuators B 133(2008)308–314Table 3Slopes and selectivity comparison of PVC–MOImCl membrane,PVC–NPOE membranes containing sulfate ionophore and THTDPCl (50mol%)or TDMACl (50mol%)as ion exchangers Ion JMembrane 6(PVC–MOImCl)Sulfate ionophore THTDPCl/PVC–NPOESulfate ionophore TDMACl/PVC–NPOE Slope (mV/dec)log KpotSO 2−4,JSlope(mV/dec)log KpotSO 2−4,J Slope (mV/dec)log KpotSO 2−4,JSO 42−−28.9±0.60−28.3±0.90−32.1±1.00Cl −−27.5±1.6 1.88±0.1−41.8±1.2 2.01±0.3−48.3±1.6 1.76±0.2Salicylate −−33.4±1.2 1.66±0.3−55.2±1.5 4.97±0.1−59.6±0.7 5.06±0.3SCN −−35.8±2.0 1.86±0.2−49.2±0.7 5.80±0.1−57.3±0.6 5.86±0.1ClO 4−−40.0±1.5 1.91±0.3−52.1±1.07.45±0.1−58.1±1.27.12±0.2Conditioning and inner filling solution:0.01M Na 2SO 4+0.1mM NaCl;primary ion:SO 42−.Fig.4.Response curves of PVC–MOImCl membrane 6toward SO 42−,᭹;Cl −, ;NO 3−,×;salicylate, ;ClO 4−,♦after conditioning in 0.01M Na 2SO 4solution.based ISE (Table 3).It is possible that imidazolium type cation of IL can have specific interaction with SO 42−and acts as ionophore that lead to better response and selectivity toward sulfate ion.pH influence on the PVC membrane containing different ionic liquids is studied.As shown in Fig.5,potential of NPOE-free PVC–THTDPCl and PVC–MOImCl membrane are slightly affected by pH in strong acidic solution and both membranes are pHFig.5.pH responses of PVC–THTDPCl ( )and PVC–MOImCl membranes (᭹).independent when pH changes from 3–10.PVC–THTDPCl and PVC–MOImCl membrane without additional plasticizer also shows good reproducibility and fast response time within 10s that is simi-lar to the response time of conventional ISE membranes (see Fig.6).It is the first time reported that ion-selective electrode prepared with PVC and ionic liquids as both ion-exchanger and plasticizer can exhibit Nernstian response to hydrophilic and lipophilic anions.3.4.Ionic liquids as anion-exchanger in ionophore-based membraneFurthermore we prepared the sensor containing neutral sul-fate ionophore [36]and ionic liquid THTDPCl.Forneutral anion ionophores it is essential to have anion-exchanger in the mem-brane to achieve the so-called Donnan exclusion.As shown in Fig.7,the membrane containing sulfate ionophore and THTDPCl (50mol%to ionophore)demonstrated Nernstian response to SO 42−with dynamic range from 10−6M to 10−1M.The response slopes and selectivity of membranes containing THTDPCl and TDMACl were compared in Table 3.THTDPCl-based membrane exhibited Nernstian slopes and similar selectivity to the TDMACl membrane.Although this ionophore was reported to be sulfate-selective,the selectivity we observed was inferior to that of ionophore-free PVC–MOImCl membrane.The complex stability constant of sul-fate ionophore in the two types of membranes with different ion-exchangers was measured by sandwich membrane method.In this method,transient membrane potential measurements on fused segmented sandwich membranes yield information about the activity ratio on both membrane sides.If only one side con-Fig.6.Response time and reproducibility of PVC–MOImCl membrane in 10−3and 10−2Na 2SO 4solutions.B.Peng et al./Sensors and Actuators B133(2008)308–314313Fig.7.Response curves of PVC–NPOE membranes containing sulfate ionophore and THTDPCl toward SO42−, ;Cl−, ;salicylate,᭹;ClO4−, after conditioning in0.01M Na2SO4solution.tains a known concentration of ionophore,information about the binding affinity of this ionophore can be obtained.As reported, the membrane potential E M is determined by subtracting the cell potential for a membrane without ionophore from that of the sand-wich membrane.The sandwich membrane potentials were found to be−251±2mV for TDMACl-based PVC–NPOE membrane and −214±3mV for the same membrane with ionic liquid THTDPCl, which give the apparent stability constants(logˇ)of7.34±0.03 and6.01±0.04,respectively according to Eq.(1)by assuming one sulfate ions binding with one ligand(n=1):E M=RTz I F ln[ˇILn(L T−nR T/Z1)n](1)where L T is the total concentration of ionophore in the membrane segment,R T is the concentration of lipophilic ionic site additives,n is the ion–ionophore complex stoichiometry and R,T,and F are the gas constant,the absolute temperature and the Faraday constant. The ion I carries a charge of Z I.The utilization of ionic liquid is able to influence the dielectric constant of the membrane,which may result in the difference of the stability constant values.The results obtained from both ionophore-based membrane and ionophore-free THTDPCl–PVC–NPOE membrane indicate that the THTDPCl could be used as an alternative anionic exchanger to TDMACl in ion-selective electrodes.3.5.ApplicationsThe new PVC–MOImCl membrane electrode with SO42−selec-tivity was applied for the determination of sulfate in drinking water samples from local market with satisfactory results.The analysis was performed by using the standard addition technique and theTable4Determination of sulfate in drinking water samples with ionophore-free PVC–MOImCl membrane6Added sulfate(mg)Found sulfate(mg)Recovery(%)31.2934.01108.753.2555.79104.873.4975.65102.996.1397.07100.9118.64117.4399.0results are summarized in Table4.Good recoveries were obtained in all samples.4.ConclusionDifferent types of ionic liquids were studied as anion exchangers in potentiometric ion sensors.Trihexyltetradecylphonium chloride was found to be a suitable alternative to the traditional anionic exchanger,TDMACl.PVC–NPOE membranes with THTDPCl as ion-exchanger exhibited similar response and selectivity sequence as TDMACl-based membranes.Furthermore,THTDPCl and MOImCl can also be used as plasticizer in PVC membranes that do not require additional organic solvent.PVC–THTDPCl membrane in which the ionic liquid THTDPCl functions as both ion-exchanger and plasti-cizer,showed comparable response to the traditional plasticized PVC–NPOE membrane containing TDMACl,while PVC–MOImCl membrane exhibited Nernstian response and good selectivity to sulfate.The proposed plasticizer-free membranes were successfully applied in real sample analysis.AcknowledgmentsThe authors wish to thank the starting grant from Renmin Uni-versity of China and National Natural Science Foundation of China (20505017)forfinancial support of this research.References[1]E.Bakker,P.Buhlmann,E.Pretsch,Carrier-based ion-selective electrodes andbulk optodes.1.General characteristics,Chem.Rev.97(1997)3083–3132. [2]P.Buhlmann,E.Pretsch,E.Bakker,Carrier-based ion-selective electrodes andbulk optodes.2.Ionophores for potentiometric and optical sensors,Chem.Rev.98(1998)1593–1688.[3]K.T´oth,n,J.Jeney,M.Horvath,I.Bitter,A.Gru¨n,B.Agai,L.Toke,Chro-mogenic calix[4]arene as ionophore for potentiometric and optical sensors, Talanta41(1994)1041–1049.[4]J.Murphy,Additives for Plastics Handbook,2nd ed.,Elsevier,2001.[5]L.Y.Heng,E.A.H.Hall,Methacrylic–acrylic polymers in ion-selective mem-branes:achieving the right polymer recipe,Anal.Chim.Acta403(2000)77–89.[6]L.Y.Heng,E.A.H.Hall,Producing“self-plasticizing”ion-selective membranes,Anal.Chem.72(2000)42–51.[7]L.Y.Heng,E.A.H.Hall,One-step synthesis of K+-selective methacrylic–acryliccopolymers containing grafted ionophore and requiring no plasticizer,Electro-analysis12(2000)178–186.[8]L.Y.Heng,E.A.H.Hall,Taking the plasticizer out of methacrylic–acrylic mem-branes for K+-selective electrodes,Electroanalysis12(2000)187–193.[9]L.Y.Heng,E.A.H.Hall,Assessing a photocured self-plasticized acrylic membranerecipe for Na+and K+ion selective electrodes,Anal.Chim.Acta443(2001) 25–40.[10]Y.Qin,S.Peper,E.Bakker,Plasticizer-free polymer membrane ion-selectiveelectrodes containing a methacrylic copolymer matrix,Electroanalysis14 (2002)1375–1381.[11]A.J.Michalska, C.Appaih-Kusi,L.Y.Heng,S.Walkiewicz, E.A.H.Hall,Anexperimental study of membrane materials and inner contacting layers for ion-selective K+electrodes with a stable response and good dynamic range,Anal.Chem.76(2004)2031–2039.[12]R.Long,E.Bakker,Optical determination of ionophore diffusion coefficientsin plasticized poly(vinyl chloride)sensingfilms,Anal.Chim.Acta511(2004) 91–95.[13]T.Welton,Room-temperature ionic liquids.Solvents for synthesis and catalysis,Chem.Rev.99(1999)2071–2084.[14]P.A.Z.Suarez,V.M.Selbach,J.E.L.Dullius,S.Einloft, C.M.S.Piatnicki, D.S.Azambuja,R.F.de Souza,J.Dupont,Enlarged electrochemical window in dialkyl-imidazolium cation based room-temperature air and water-stable molten salts,Electrochim.Acta42(1997)2533–2535.[15]S.Carda-Broch,A.Berthod,D.W.Armstrong,Solvent properties of the1-butyl-3-methylimidazolium hexafluorophosphate ionic liquid,Anal.Bioanal.Chem.375(2003)191–199.[16]J.G.Huddleston,R.D.Rogers,Room temperature ionic liquids as novel mediafor‘clean’liquid–liquid extraction,mun.(1998)1765–1766. 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sensors and actuators b chemical不超过5000字
sensors and actuators b chemical不超过5000字Sensors and Actuators are crucial components in the fieldof chemical engineering. These devices play a significant role in monitoring and controlling various chemical processes and reactions. Sensors are responsible for detecting physical or chemical changes in the environment, while actuators are used to initiate a certain action based on the information received from sensors.传感器和执行器是化学工程领域中不可或缺的部件。
这些设备在监测和控制各种化学过程和反应中起着重要作用。
传感器负责检测环境中的物理或化学变化,而执行器则根据传感器接收到的信息来启动某种动作。
Chemical sensors are specialized sensors that are designedto detect the presence of specific chemicals or gases. These sensors work based on various principles such as electrochemical, optical, or catalytic reactions. They can be used to monitor parameters such as temperature, pressure, pH, concentration of a particular chemical species, andmany more.化学传感器是专门设计用于检测特定化学物质或气体存在的传感器。
sensors and actuators reports的缩写形式
sensors and actuators reports的缩写形式
摘要:
1.Sensors and Actuators Reports 的概述
2.Sensors and Actuators Reports 的缩写形式
3.Sensors and Actuators Reports 的重要性
正文:
Sensors and Actuators Reports 是一本关注传感器和执行器领域的国际性学术期刊,旨在为传感器和执行器科技的研发、设计和应用提供最新研究进展和信息。
该期刊汇集了来自全球各地的研究人员和工程师,共同探讨传感器和执行器的发展趋势、技术创新和实际应用。
Sensors and Actuators Reports 的缩写形式为“Sens.Actuators, B”(Sensors and Actuators, B),这个缩写形式主要用于文献引用和数据库检索。
其中,“B”表示该期刊是Sensors and Actuators 系列的一部分,涵盖了生物医学、化学、物理、工程等多个学科领域。
Sensors and Actuators Reports 的重要性体现在其对传感器和执行器领域的学术研究与技术创新产生了积极的推动作用。
通过发表高质量的原创研究论文、综述文章和专题讨论,该期刊为相关领域的学者和企业提供了丰富的知识资源和技术指导。
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Sensors and Actuators B 173 (2012) 862–867Contents lists available at SciVerse ScienceDirectSensors and Actuators B:Chemicalj o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /s nbA highly selective and sensitive fluorescent sensor for Cu 2+and its complex for successive sensing of cyanide via Cu 2+displacement approachLijun Tang ∗,Mingjun CaiDepartment of Chemistry,Liaoning Key Laboratory for the Synthesis and Application of Functional Compounds,Bohai University,Jinzhou 121013,Chinaa r t i c l ei n f oArticle history:Received 7June 2012Received in revised form 29July 2012Accepted 31July 2012Available online 9 August 2012Keywords:Copper detection Cyanide recognition FluorescenceIndicator displacement approacha b s t r a c tA new benzimidazole-based imine linked sensor (1)was synthesized.Sensor 1exhibits highly selective and sensitive recognition properties to Cu 2+in CH 3OH/H 2O (1/1,v/v,HEPES 10mM,pH =7.0)solution with a 1:1binding stoichiometry.The in situ prepared 1–Cu 2+complex solution displays high selectiv-ity to cyanide through Cu 2+displacement approach and possesses excellent tolerance to other common interference anions.The detection limits of sensor 1to Cu 2+and 1–Cu 2+complex to cyanide were esti-mated to be 1.82×10−8M and 1.62×10−6M,respectively.This Cu 2+and cyanide successive recognition feature of sensor 1makes it a potential utility for Cu 2+and cyanide detection in aqueous media.© 2012 Elsevier B.V. All rights reserved.1.IntroductionThe development of artificial receptors for biologically impor-tant metal ions [1,2]and anions [3,4]has received considerable attention due to their fundamental roles in a wide range of chem-ical,environmental and biological processes.Copper (II)ion,being the third adequate element following ion and zinc,plays crucial roles in many fundamental physiological processes in organisms.It is well known that it serves as a catalytic cofactor for a variety of metalloenzymes including superoxide dismutase,cytochrome c oxidase and tyrosinase [5].Whereas,unregulated overloading of copper can lead to severe neurodegenerative diseases such as Alzheimer’s [6]or Parkinson’s diseases [7].Cu 2+is also suspected to cause infant liver damage in recent years [8,9].Thus,the highly selective,sensitive and rapid recognition of Cu 2+by chemosensors in aqueous media is still imperative.As a consequence,consider-able efforts have been devoted to the development of probes for the recognition of Cu 2+[10–24].On the other hand,among the significant anions,cyanide detec-tion has attracted increasingly more attention due to its high toxicity.For instance,cyanide ions can bind heme cofactors to inhibit the process of cellular respiration in mammals [25].Most environmental cyanides are released by industries involved in nylon and acrylic polymers synthesis,electroplating,and gold min-ing [26].Hence,great efforts have been devoted to the detection of∗Corresponding author.Tel.:+864163400302;fax:+864163400160.E-mail address:lijuntang@ (L.Tang).cyanide by using highly selective,sensitive and convenient chemi-cal probes [27].To date,a variety of detecting principles have been applied to cyanide recognition,including hydrogen bonding inter-actions [28],formation of cyanide complexes [29–31],utilizing of nucleophilic attack of CN −on activated carbonyl groups [32–41],Michael acceptor type of activated C C double bond [42–46]or a boron center [47,48],demetalation of preassembled complexed sensor [49–52].Taking the advantage of high copper-cyanide affin-ity has been proved to be a valuable strategy to built highly selective and sensitive chemosensors for cyanide in aqueous media [49,53–57],this methodology also can effectively avoid the inter-ference by other anions such as fluoride and acetate.Herein we designed and synthesized a new benzimidazole based fluorescent sensor 1(Scheme 1)for Cu 2+recognition.The in situ formed 1–Cu 2+complex was further used for fluorescence “off–on”recognition of cyanide via Cu 2+displacement approach.2.Experimental2.1.Instruments and reagentsUnless otherwise stated,solvents and reagents were of ana-lytical grade from commercial suppliers and were used without further purification.1H NMR and 13C NMR spectra were recorded on Bruker Advance-600MHz spectrometer.Chemical shifts (ı)were expressed in ppm and coupling constants (J )in Hertz.High resolution mass spectrum was measured on an Agilent 1200time-of-flight mass spectrometer (Bruker,micrOTOF-Q).UV–vis spectra were measured on a SP-1900spectrophotometer (Shanghai,China).0925-4005/$–see front matter © 2012 Elsevier B.V. All rights reserved./10.1016/j.snb.2012.07.112L.Tang,M.Cai /Sensors and Actuators B 173 (2012) 862–867863NH NH 2NOHOH 3OHCN H NNHOHOCH 3EtOH reflux231Scheme 1.Synthesis of sensor 1.Fluorescence measurements were performed on a Sanco 970-CRT spectrofluorometer (Shanghai,China).The IR spectrum was mea-sured in KBr disks on a Nicolet Magna FT-IR 560Spectrometer.The pH measurements were made with a Model PHS-25B meter (Shanghai,China).2.2.Synthesis of 12-(Aminophenyl)-1H -benzimidazole (2)(200mg,0.96mmol)and 2-hydroxy-3-(hydroxymethyl)-5-methyl-benzaldehyde (3)[58](160mg,0.96mmol)were dissolved in 50mL of absolute ethanol,the resulting solution was heated to reflux for 3h.Upon cooling to r.t.,the precipitates formed were collected by filtration,which were washed by ice cold ethanol to give 246mg of 1.Yield:72%.Mp:219–219.7◦C.1H NMR (600MHz,DMSO-d 6)ı9.02(s,1H),7.98(dd,1H,J 1=7.8Hz,J 2=1.2Hz),7.65(d,1H,J =7.8Hz),7.26(d,1H,J =1.8Hz),7.25–7.22(m,2H),7.18–7.15(m,1H),7.07–7.04(m,2H),6.96(d,1H,J =7.8Hz),6.87(d,1H,J =7.8Hz),6.83–6.81(m,1H),6.54(d,1H,J =1.8Hz),5.50(t,1H,J =4.8Hz),4.63(m,2H),2.01(s,3H).13C NMR (150MHz,DMSO-d 6)ı149.8,147.9,144.3,143.9,133.3,131.9,128.9,128.6,126.9,125.7,125.0,122.5,122.4,119.0,118.3,115.2,112.1,110.7,65.4,60.1,65.89,20.8.HRMS (ESI+)calcd for C 22H 20N 3O 2[M+H]+358.1556,found 358.1549.2.3.General spectroscopic proceduresCompound 1was dissolved in MeOH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)to afford the test solution (1.0M).Titration experiments were carried out in 10-mm quartz cuvettes at 25◦C.Metal ions (as chloride or nitrate salts,10mM)and anions (as sodium salts,10mM and 100mM)in MeOH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)were added to the host solution and used for the titration experiment.1–Cu 2+solution for cyanide detection was prepared by addition of 1.0equiv.of Cu 2+to compound 1solution in MeOH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0).3.Results and discussionTo explore the photophysical properties,the fluorescence spec-trum of 1in MeOH/H 2O (1:1,v/v)solution under different pH conditions was examined first (Fig.S1).The results reveal that sen-sor 1exhibits strong fluorescence emission intensity at pH 7–8.The fluorescence intensity decrease of sensor 1at low pH values could be attributed to protonation of benzimidazole moiety that lead to proton-induced fluorescence quenching [59].Under high pH conditions,the phenol OH underwent deprotonation and might result in photoinduced electron transfer (PET)from the deproto-nated phenol to benzimidazole moiety,this PET effect quenched the fluorescence emission of sensor 1[60].Thus,pH of 7was selected as working moiety for further studies.Subsequently,thefluorescence spectrum changes of solution 1(1.0M)in MeOH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)before and after addi-tion of different metal ions were examined.As depicted in Fig.1,metal free solution 1shows a strong fluorescence emission at 429nm which can be ascribed to the benzimidazole Schiff base skeleton.Interestingly,addition of 1.0equiv.of Cu 2+resulted in a remarkably quench of fluorescence intensity.Whereas,upon addi-tion of other metal ions such as Hg 2+,Fe 3+,Na +,K +,Fe 2+,Ag +,Pb 2+,Sr 2+,Ba 2+,Cd 2+,Ni 2+,Co 2+,Mn 2+,Zn 2+,Al 3+,Cr 3+and Mg 2+(1.0equiv.for each),no significant variations in the fluorescence intensity of 1occurred.Time-dependent fluorescence change stud-ies revealed that the Cu 2+induced fluorescence quenching can complete within 1min (Fig.S2).These observations demonstrate that sensor 1is highly selective to Cu 2+over other meal ions.Subsequently,fluorescence titration of 1(1.0M)by different amounts of Cu 2+(0–1.0M)was then investigated.With increasing the Cu 2+concentration,the original strong fluorescence emission was gradually quenched and reached saturation when 1.0equiv.of Cu 2+was added.Further increasing of Cu 2+amount did not cause significant fluorescence emission changes (Fig.2).When assum-ing a 1:1binding mode,the association constant (K a )of 1and Cu 2+was determined by using the Benesi–Hildebrand equation.Plotting of 1/(F 0−F )versus 1/[Cu 2+]showed a good linear rela-tionship (R =0.994),which indicates the 1:1interaction between 1and Cu 2+(Fig.S3),and the association constant K a was calcu-lated to be 6.59×105M −1.The 1:1binding stoichiometry of 1and Cu 2+was further verified by Job’s plot.The fluorescence intensity at 429nm exhibited aturning point when the molar fraction of Cu 2+isFig.1.Fluorescence spectra changes of solution 1(1.0M)upon addition of a spe-cific metal ion (1.0M)in CH 3OH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)with an excitation at 357nm.Inset:photograph of 1and 1+Cu 2+taken under illumination of a UV lamp at 365nm.864L.Tang,M.Cai /Sensors and Actuators B 173 (2012) 862–867F l u o r e s c e n c e I n t e n s i t y (a .u .)Wavelength (nm)Fig.2.Changes in fluorescence spectra of solution 1(1.0M)upon incrementaladdition Cu 2+ion (0–1.0M)in CH 3OH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)with an excitation at 357nm.Inset:Benesi–Hildebrand plot (emission at 429nm)of 1by plotting 1/(F 0−F )as a function 1/[Cu 2+].50%,which further proved the 1:1binding stoichiometry between 1and Cu 2+(Fig.S4).These results reveal that sensor 1exhibits an excellent sensing property to Cu 2+ion and binds Cu 2+via a 1:1stoichiometry.UV–vis absorption changes of solution 1(20M)upon addition of miscellaneous metal ions were also explored.Upon addition of 1.0equiv.of Cu 2+to solution 1,the original absorption at 356nm greatly decreased,concomitantly,a new absorption band centered at 426nm appeared.Other tested metal ions did not induce such absorption changes (Fig.S5).The results of UV–vis absorption titra-tion of solution 1by Cu 2+showed two clear isosbestic points at 341and 378nm (Fig.S6),indicating the formation of a stable Cu 2+complex.Thus,the observed Cu 2+induced fluorescence quenching of solution 1could be attributed to the formation of 1–Cu 2+com-plex,in which the paramagnetic Cu 2+quenched the fluorescence emission of 1through electron or energy transfer [61,62].As a highly selective probe for the target analyte,the good capacity of resisting disturbance is required.Hence,the competi-tion experiments in the presence of potentially competitive metal ions were examined by fluorescence spectra.Except for Cu 2+,other metal ions (1.0equiv.to 1)do not produce significant fluorescence intensity changes (Fig.3).Upon addition of Cu 2+(1.0equiv.to 1)to the solution containing 1and other metal ion,the fluorescence emission of the solutions was almost completely quenched.These results demonstrate that the Cu 2+recognition by 1is barely inter-fered by other coexisting metal ions.According to the fluorescence titration data,the limit of detec-tion of sensor 1for Cu 2+is evaluated to be 1.82×10−8M (Fig.S7,see supplementary data for detailed calculation)[63],which is much lower than the limit of copper in drinking water (∼20M)and the typical concentration of blood copper (15.7–23.6M)in normal individuals defined by the U.S.Environmental Protection Agency [11,64].Such a low detection limit makes sensor 1is sensitive enough to monitor Cu 2+concentration in water.To get some insight into the binding mode between 1and Cu 2+,the IR spectra of 1and 1–Cu 2+were measured and compared (Fig.S8).IR spectrum of 1exhibited a strong band at 1618cm −1characteristic of CH N stretching vibration [65],which split and shifted to 1621and 1633cm −1after 1complexed with Cu 2+.The shifting of CH N band to the higher frequency side provided evi-dence in support of the involvement of CH N nitrogen atom in coordination with Cu 2+[66].Additionally,the in-plane bending vibration band of phenolic O H of 1at 1401cm −1disappearedinH B F PNC Z F CF l u o r e s c e n c e I n t e n s i t y (a .u .Fig.3.The fluorescence of solution 1(1.0M)at 429nm to various metal ions.The gray bars represent the fluorescence of 1in the presence of 1.0M of miscellaneous metal ions,the red bars represent the fluorescence of the above solution upon sub-sequent addition of 1.0M of Cu 2+.(For interpretation of the references to color in this figure legend,the reader is referred to the web version of the article.)the IR spectrum of 1–Cu 2+,which indicating the coordination of deprotonated phenolic oxygen atom to Cu 2+[67].In view of the extremely high stability constants of cyanide and copper ions [54],1–Cu 2+complex was expected to act as a poten-tial indirect sensor for cyanide recognition via Cu 2+displacement approach.Thus,the sensor 1–Cu 2+was prepared in situ by addi-tion of 1.0equiv.of Cu 2+to solution 1.The responses of sensor 1–Cu 2+(1.0M)to a varietyof anions including F −,Cl −,Br −,I −,AcO −,HSO 4−,H 2PO 4−,HPO 42−,PO 43−,SCN −,NO 3−,CO 32−,HCO 3−,ClO 4−and CN −(all used as sodium salt,100equiv.for each)were subsequently investigated (Fig.4).Only CN −could induce the fluo-rescence intensity of 1–Cu 2+solution greatly enhanced and almost restored to the original emission state of solution 1.The emission changes can be readily distinguished by naked eye (Fig.4,in set).Time-dependent fluorescence change evaluation revealed that the CN −induced fluorescence revival can complete within 1h (Fig.S9).Fig.4.Changes in fluorescence spectra of 1–Cu 2+(1.0M)to a specific anion (100M)in CH 3OH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)with an excitation at 357nm.Inset:photograph of 1+Cu 2+and 1+Cu 2++CN −taken under illumination of a UV lamp at 365nm.L.Tang,M.Cai /Sensors and Actuators B 173 (2012) 862–867865Fig.5.Proposed mechanism of cyanide recognition by 1–Cu 2+.These results indicate that the added CN −can snatch Cu 2+from 1–Cu 2+complex and lead to the fluorescence revival of 1.To further understand the Cu 2+displacement approach,UV–vis absorption changes of 1–Cu 2+(20M)in the absence and pres-ence of different anions were also investigated.The absorption band at 426nm greatly decreased upon addition of 100equiv.of CN −,however,addition of other anions did not induce obvious absorption changes (Fig.S10).Upon incremental addition of CN −(0–100equiv.)into solution 1–Cu 2+,the absorption band at 426nm decreased gradually and finally restored to the original absorption state of 1when 100equiv.of CN −was added (Fig.S11).These results demonstrate that the CN −induced Cu 2+displacement indeed hap-pen.Based on the aforementioned IR spectra comparison results as well as the binding mode of Cu 2+to ligands that structural similar to 1[68–70],the binding of 1with Cu 2+and the mechanism of cyanide recognition by 1–Cu 2+were proposed and illustrated in Fig.5.The high selectivity and fluorescence “off–on”change make sensor 1–Cu 2+a good candidate for highly selective recognition of CN −.The CN −sensing property of 1–Cu 2+was then evaluated by flu-orescence titration experiments and the results were depicted in Fig.6.Upon incremental addition of CN −into 1–Cu 2+solution,the fluorescence intensity increased gradually and reached saturation when 100equiv.of CN −was added.Fluorescence titration results show that the original strong emission of 1was gradually restored200400600800F l u o r e s c e n c e I n t e n s i t y (a .u .)Wavelength (nm)Fig.6.Changes in fluorescence spectra of 1–Cu 2+(1.0M)upon incremental addi-tion CN −ion (0–100M)in CH 3OH/H 2O (1:1,v/v,HEPES 20mM,pH =7.0)with an excitation at 357nm.with the increasing of CN −amount,which indicating the Cu 2+abstraction of 1–Cu 2+by cyanide ions.The fluorescence titration results also demonstrate the good sensitivity of 1–Cu 2+to CN −.Subsequently,fluorescence competition experiments were con-ducted to further evaluate the anti-jamming ability of sensor 1–Cu 2+.The results reveal that coexistence of equal amount of other anion does not induce any significant interference on CN −recognition (Fig.7).The fluorescence intensities of the competi-tive anion containing tested solutions were almost restored to the level that caused by CN −only.Results of these competition exper-iments reveal that the CN −recognition by sensor 1–Cu 2+is barely interfered by other coexisting anions.In addition,the detection limit of 1–Cu 2+for CN −was also eval-uated and was calculated to be 1.62×10−6M (Fig.S12),which is lower than the upper limit 1.9M for cyanide in drinking water set by the World Health Organization [71].This result indicates that sensor 1–Cu 2+hasa good sensitivity toward cyanide and has the potential utility to detect cyanide concentration in water.Different from the previously developed monofunctional Cu 2+sensing probes [10–24],sensor 1has the ability of highly selective and sensitive sequential recognition to Cu 2+and CN −.The in situ prepared cyanide sensor 1–Cu 2+can overcome the drawbacks such as moderate selectivity and only work in organic solvent of someFig.7.The fluorescence of 1–Cu 2+(1.0M)at 429nm to various anions.The graybars represent the fluorescence of 1in the presence of 100M of miscellaneous anions,the red bars represent the fluorescence of the above solution upon subse-quent addition of 100M of CN −.(For interpretation of the references to color in this figure legend,the reader is referred to the web version of the article.)866L.Tang,M.Cai/Sensors and Actuators B173 (2012) 862–867cyanide probes[28,30].Moreover,the limitations such as lack of reversibility or the use of elevated reaction temperature of the chemodosimetric cyanide probes[32–48]can also be nullified. 4.ConclusionsIn summary,a new benzimidazole based sensor(1)for highly selectivefluorescent recognition of Cu2+has been developed.The in situ prepared sensor1–Cu2+for successive recognition of cyanide was also investigated.Sensor1behaves highly selectivity and sen-sitivity toward Cu2+over other heavy and transition metal ions.The in situ prepared1–Cu2+complex exhibits highly selective cyanide recognition property in the presence of other common interfer-ence anions.The Cu2+and cyanide successive recognition feature and the low detection limits make1has potential utilities for Cu2+ and cyanide detection in environmental monitoring work. AcknowledgementsWe are grateful to the NSFC(21176029),the Natural Science Foundation of Liaoning Province(20102004)and the Program for Liaoning Excellent Talents in University(2012)forfinancial sup-port.This work was also sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Edu-cation Ministry.Appendix A.Supplementary dataSupplementary data associated with this article can be found,in the online version,at /10.1016/j.snb.2012.07.112. 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