ARF676S48中文资料
艾膈xStorage家型单相，3.6kW，4.2kWh，AC耦合，灰色 蜂窝模式，PV6说明书
Eaton XSTH1P0361UC3EV2Eaton xStorage Home single-phase, 3.6 kW, 4.2 kWh, AC coupled, Grey/Honeycomb, PV 6General specificationsEaton xStorage Home single-phase XSTH1P0361UC3EV2XST 1Ph 3.6kW 4.2kWh Grey/Honeycomb3553340100666890 mm1230 mm 220 mm 159 kgCE Marked CE LVD RoHS CompliantEN 61000-6-3 EN 61000-6-2EN 62109 (part 1:2010, part 2:2011)Product NameCatalog Number Model CodeEANProduct Length/Depth Product Height Product Width Product Weight Compliances Certifications0.99 (Grid-Tie), 0.8 (ind) - 0.8 (cap) (Grid Tie-PF regulation, Off-Grid)3,6 kW17.4 A230V97%Residual current circuit breaker (RCCB)Overload-/temperature protectionShort-circuit protectedBuilt-in batteryWith data loggingEthernetWLANEmergency power compatible3600 VA550 V20 AIP20Power metering of critical loads and PV production Eaton xstorage Home Brochure enxStorage Home BrochurexStorage Home Product team guidelinesxStorage Home Installation manualEaton xStorage Home Quick Start Guide xStorage Home User Interface Manual xStorage Home User manualEaton xStorage Home Safety GuidelinesHow to onboard xStorage Home into the Cloud xStorage Home - Technical data sheetOutput power factorPower rangeAC current - maxAC inputEfficiency (PV to grid) - max Fitted with:Nominal output powerDC voltage on PV input - max Input Current on PV Input – Max Degree of ProtectionLED indicator colorMetering capability BrochuresCase studiesManuals and user guidesMultimediaTechnical data sheetsGreen (ON): Normal status. Red (ON): Fault status. Inverter is unable to connect to the grid.Green (Blinking): Communication activitySpecial featuresThe xStorage Home system offers three different power inverter ranges.Nominal DC Operating Voltage – Max550 VCoolingNatural airflowStorage temperature - max40 °CTopologyTransformerlessBattery nominal capacity4,2 kWhProtective classIAC wiring systemsSingle phase/N/PE, TN, TT, IT (additional fuse or CB required)Relative humidity - min5 %C/D DC current - Max70 ANominal AC output current15.6 AStandby losses< 10WStorage temperature - min-10 °CDC battery voltage - min74.4 VOver voltage categoryOVC II (PV and Battery), OVC III (AC grid/load)PhaseSingle phaseOperating temperature - min0 °CRelative humidity - maxEfficiency (Battery to AC) - Max>90%Grid integrationDC and AC coupledNumber of MPPT Trackers2Noise level35 dB (indoor application)Rated MPP-voltage – min240 VMaterial coverPlasticNominal DC Operating Voltage – Min 100 VPower consumption3.6 kWOperating temperature - max30 °CHazard substance restrictionLead free, compliance with RoHS GP2Initial feeding voltage150 VProtocolHTTPAPIRESTMPPT efficiency> 99%Recommended PV power3 kWp - 7 kWpSolar DC switchYesNominal AC grid voltage230 V (Grid-Tie), 230 V ± 3 % (Off-Grid)DC battery voltage - max98.4 VEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All rights reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia35 A90 V< 3%AC Synchronized operation 50 Hz / 60 Hz ± 1 Hz 2000 m Standard550 VBattery voltage rating Total Harmonic Distortion (THD)Nominal frequencyAltitude Display Rated MPP-voltage – max。
6lb184中文资料
6lb184中文资料6lb184中文资料【用途】RS485/422电平转换电路【性能参数】双列贴片8脚封装。
TTL-RS485/422电平转换。
工作电压4.75-5.25V，典型5V。
【互换兼容】SN65LBC184D【6LB184的原厂(中文)资料数据手册脚功能参数封装】摘要：电子镇流器(Electrical ballast)是镇流器的一种，是指采用电子技术驱动电光源，使之产生所需照明的电子设备。
电子镇流器自身功耗低，有更佳的照明效果，消除了闪频现象，发光更稳定，而且可以调光。
文章采用AVR单片机作为控制芯片，通过电子镇流器进行调光和相关功能的控制，最大限度地发挥智能型镇流器的特点。
实际应用表明，文中的方法有效。
0 引言电子镇流器是新型节能产品，不仅能带动一些照明灯具，还可以和一些紫外灯结合在一起，对于空气净化和水源净化都有着非常大的作用。
当前，全世界都在大力提倡环境保护，电子镇流器间接地为环保提供了原动力。
AVR单片机是一款性价比较高的单片机，用这种单片机来对电子镇流器进行调光和时间采样非常合适，首先是AVR单片机本身较稳定，抗干扰能力比较强，其次是其本身的Harvard结构使得运行速度比较快，数据回读时间较快，可以实现实时在线控制。
1 AVR单片机介绍1.1 AVR单片机的特点与以往的8位单片机相比，AVR单片机采用Harvard结构，也就是程序总线和数据总线分开，并采用两级流水线，具备1MIPS/MHz的高速运行处理能力。
片内集成多种频率的RC振荡器、上电自动复位、看门狗、启动延时等功能模块，外围电路简单，系统更加稳定可靠。
大部分AVR片上资源丰富：带E2PROM、PWM、RTC、SPI、UART、TWI、ISP、AD、Analog Comparator、WDT等单元模块。
1.2 AVR单片机的PWM功能AVR单片机的定时器功能强大，以Atmega48为例，它有两个8位定时器和一个16位定时器，都具有硬件PWM功能。
AR 电子实验室 RF 仪器 'A' 系列和 'W' 系列的产品介绍说明书
1rf/microwave instrumentation“A ”Series.DC to 400 MHz.25 to 10,000 watts.“W” Series.DC to 1000 MHz.1to 4000 watts.Distributed T ube Amplifier 10 kHz to 100 MHz.10,000 watts.RF Power Amplifiersfor EMC and General RF Testing2009/2010E s t a b l i s h e d 1981AR began in 1969 with just two men in a cellar, moonlighting from their regular jobs.Don (“Shep”) Shepherd and his partner, Dan Roth, worked for AEL (American Electronics Laboratories),producing radio frequency design for military applications. They saw a market for their skills in designing amplifiers for test applications, but AEL was not set up for such jobs. So they decided to try and make it on their own, working out of a makeshift laboratory in Shep’s cellar.1969 – We sold our first amplifier for a total of $600 (including $60 for special connectors).1970 – Moved out of Shep’s cellar and up to small rented storefront. 1972 – Distribution expands into Europe.1973 – Amplifier Research (AR) moves to new headquarters at160 School House Rd. in Souderton, PA.1976 – AR introduces first 10,000 watt tube amplifier (10 kHz -100 MHz). It’s still available,and there’s still no equal.1979 – Company passes $1 million in sales.1987 – 75 employees now work for AR.1988 – First 100 watt solid-state, 100-1000 MHzinstantaneous bandwidth amplifier built.It weighed 215 lbs. and was 29.3" high.1990 – Second building completed at headquarters. Sales exceed $10 million.1992 – AR unveils first 500 watt solid-state amplifier (100 -1000 MHz).1994 – A third building is erected at 160 School House Rd.1996 – AR reaches $25 million in sales with 100 employees.2001 – The company expands it capabilities into amplifier modulesand customized systems with the acquisition of Kalmus in Bothell, WA, now AR Modular RF .Back in Souderton, a fourth building is completed. Sales exceed $35 million.“We started the company in my basement.Because the only place we could go from there was up.”Don Shepherd, Founder2002 – Carnel Labs in Canoga Park, CA joins the AR family,becoming AR Receiver Systems.2003 – First 10,000 watt / 100 kHz - 250 MHz solid-state amplifier forautomotive/military/avionics testing created. Still the only 10,000 watt solid state available.2004 –The little company that started in a cellar now has 125 employees.2005 – New engineering department and microelectronics lab (clean room) open.Sales pass the $45 million mark.2006 – New 15,000 sq. ft. building is completed at corporate headquarters withexpanded production facilities to meet the ever-growing demand for AR products.150 employees now work for AR.2007– AR introduces first 10-20 GHz / 5 watt instantaneous bandwidth test amplifier.2009– AR celebrates 40 years in business.AR, which now encompasses AR RF/Microwave Instrumentation, AR Modular RF ,AR Receiver Systems and AR Europe, employs over 200 people and continues to lead the industry with innovative, superior quality, technologically-advanced products and a global support system that’s second to none.We definitely have risen far from Shep’s cellar.21Folding back is typical of Class AB and lesser-grade Class A designs. AR’s Class A circuitry is built to higher standards:All “Class A”Is Not The Same.• AR uses tandem push-pull transistor pairs. This arrangement is more rugged than the single output devices found in lesser grade Class A amplifiers.• AR amplifiers use internal power combiners that can withstand high reflected power.• AR amplifiers use only top quality, high-power internal directional couplers • AR amplifiers use switching power supplies to increase efficiency and reduce internal heat load.It’s no wonder that only AR claims and delivers 100% rated power to the load!“We Started With A Dream,And It’s Grown Into A Reality.”T oday we’re recognized as the ultimate source for testing and communications solutions in the worlds of EMC,military, wireless, and beyond. And our products are everywhere.They’re boosting the power of military radios for our troops in battle; driving the most sophisticated industrial/medical/scientific equipment; testing the emissions and susceptibility of electronic equipment; and helping new electronic products get to market faster.We’ve become the industry leader by continually setting the bar a little higher.By raising quality.And increasing cost-efficiency.With innovations like “subampability” – the ability to add power to existing amps; and test systems that can be upgraded from the Internet to adapt to changing specs.With the combined resources of all the AR companies, AR is your source for everything from RF power amplifiers,antennas, complete test systems, probes, monitors, software and receivers to military booster amps, and RF amplifier modules that can be customized to meet the toughest specs.We take great pride in the support & service we deliver to our customers anywhere in the world, whenever they need it.Infinite VSWR T olerance Means More P ower T o Y ou.Approximately 80% of the amplifiers in this brochure are completely immune to load VSWR. That means 100% of the power is delivered to the load 100% of the time. Our highest power amplifiers refuse to limit until VSWR exceeds 6.0:1 or 50% (of rated output) reflected power. Competitive Class AB amplifiers respond to reflected power from high VSWR by limiting output power at the exact time you need every bit of power. Some actually shut down. We find that completely unacceptable .Donald “Shep” Shepherd Chairman430The Difference Is Power Delivered T o The Load.Since the output power of AR amplifiers does not fold back with VSWR, more power is absorbed in the load.The Difference Is Several Times Greater.Most AR amplifiers do not fold back or limit. The power absorbed by the load is many times greater than with competitive amplifiers that fold back at 1/VSWR.and one controller/combiner, you get 3000watts of power;and so on up to 4000 watts.The amplifiers can still be used independently when tests call for less power.See Application Note #40A Expandable Power for further details.W e design our amplifiers not just for today, but for tomorrow. Most models include:• Digital Control Panels (DCP) in one of two formats: graphical vacuum fluorescent or two-line vacuum fluorescent• Built-in IEEE-488 Interface and RS-232interface (Fiberoptic RS-232 on Graphical DC • Local and Remote Control (on DCP amplifier)• Forward and Reflected Power Readout (on graphical DCPs)• Control Status and Internal Amplifier Status Reports• USB and Ethernet – on selected models See individual amplifier spec sheets to verify the features on any amplifier.Expandable PowerRF test levels are constantly increasing. The same is true for many test distances. Usually, this requires larger, more powerful amplifiers. It also means throwing out your old amps. But AR is changing all that.Many amplifiers in our “S” and “W” Series allow you to add power to existing amps as needed. There’s no need to toss out a perfectly good amp and start all over again. W e call this concept “Subampability .”Much like building blocks, it enables you to add incremental power using existing amps. With arelatively simple upgrade, you can “combine” multiple amps to achieve the power you need. This is clearly an idea whose time has come.But it gets even better.Since the higher power would be needed only for some tests, “Subampability” enables you to split the amplifiers so that they can be used individually whenever needed.Here’s an example of how “Subampability” works: If you start with a 1000W1000C amplifier (1000 Watts CW , 80-100 MHz) and then you need more power,you can add another 1000W1000C amplifier and a controller/combiner for 2000 watts of power.And you can keep going!With three 1000W1000C amplifiersGood Enough Isn’t Good Enough.So W e Keep T weaking.Ready For The Future.Subampability™: (sub-amp-ability). noun: The ability to use an amplifier individually , or as a building block, upon which powercan be added incrementally .Solid State, Low Frequency Amplifiers.W e’re constantly under the cover of our amplifierstweaking the major components and making improvements. After years of R&D, AR has perfected the technology of optimal module performance. The result is increased bandwidth and more power, especially at the high end of the frequency range.T wo modules, one from 100 kHz to 250 MHz and one from 100 kHz to 400 MHz, offer this new technology. These modules serve as basic building blocks for the 10,000A250A and 5000A250Aamplifiers, as well as for the 100A400 and 150A400amplifiers for BCI applications.The need for higher power is continually increasing; and AR is ready. Our new “A” Series amplifiers feature 500, 1000, and 2500-watt models with expanded coverage down to 10 kHz.And we’re now able to pack more power into smaller “packages.”6AR Competitive Edge products supply a multitude of unique RF solutions to companies around the world. The company’s limitless support network reaches the far corners of the globe. AR products are backed by the company’s“Competitive Edge” warranty, the best and most comprehensive warranty in the industry.When companies purchase from any AR company they have the peace of mind that comes from knowing the global leader will be there to help with any problems today, tomorrow and always.A Global Support Network That’s Second T o None.A warranty is only as good as the company and the people behind it. AR’s highly-trained,experienced support staff is the best in the business.And they are right where you need them, in all the far corners of the globe. Help is just a phone call away… today, tomorrow and always.See “Sales Associates” at for a complete listing or call Customer Service at 215-723-0275.By the way, when you call,you’ll talk to a real receptionist who will connect you to the help you need. Y ou can also call our hotline at 800-933-8181 and talk to directly an applications engineer whose job is to help one person at a time.V alue Right From The Start… a 10% Bonus.AR’s quality makes our products a good value.But we also help you save right up front. When you visit the AR booth at a trade show, you’ll receive a bonus coupon that’s worth 10% of the purchase price of your AR amplifier toward the purchase of any AR accessory. That’s anything other than amplifiers–and it’s good for up to $20,000!Quality, V alue, Service and Innovation That No Other Company Can Match.With the combined resources of all the AR companies, AR is your source for everything from power amplifiers, antennas, complete test systems,probes, monitors, software and receivers to amplifier modules that can be customizedto meet the toughest specs.5The Most Comprehensive And Most Meaningful W arranty In The Industry.A Better Amplifier And A Better V alue. W att For W att, Our Amplifiers Cost Less!Lower cost doesn’t necessarily equal a better value.Not when you’re paying for power that you never get.The following equation will help you calculate the per-watt cost of your amplifier and the dollar-for-dollar value:Consider a typical 100 watt AR Class A amplifier driving a high VSWR (100 watt output, 50% or 50 watts reflected at 6.0:1 and 50 watts absorbed by the load) at a cost of $20,000–Compare this with a competitive 100 watt Class AB amplifier also driving a high VSWR (due to foldback, only 34 watts output, 50% or 17 watts reflected at 6.0:1 and 17 watts absorbed by the load) at a cost of $15,000–These numbers clearly demonstrate that while the initial cost of AR amplifiers may be higher, the net result based on superior performance is greater value. In other words, our amplifiers provide more bang for the buck!$20,00050W= $400/watt$15,00017W= $882/wattAmplifier PricePower Absorbed by the Load= Amplifier Price Per Watt40AD140 watts CW. dc-1 MHz.Rated Output Power40 watts Input For Rated Output 1.0 milliwatt max.350AH1350 watts CW. 10 Hz - 1 MHz.Operation Class AB LinearPower Output(1.79 Ohm load)75A40075 watts CW. 10 kHz-400 MHz.Rated Output Power75 watts min.Input For Rated Output 1.0 milliwatt max.1500A31500 watts CW. 10 kHz-3 MHz.Rated Output Power1500 wattsInput For Rated Output 1.0 milliwatt max.5000A35000 watts CW. 10 kHz-3 MHz.Rated Output Power5000 wattsInput For Rated Output 1.0 milliwatt max.800A3A800 watts CW. 10 kHz-3 MHz.Rated Output Power800 wattsInput For Rated Output 1.0 milliwatt max.25A250A25 watts CW. 10 kHz-250 MHz. Rated Output Power25 watts Input For Rated Output 1.0 milliwatt max.75A250A75 watts CW. 10 kHz-250 MHz.Rated Output Power75 wattsInput For Rated Output 1.0 milliwatt max.100A250A100 watts CW. 10 kHz-250 MHz.Rated Output Power100 wattsInput For Rated Output 1.0 milliwatt max.500A250A500 watts CW. 10 kHz-250 MHz.Rated Output Power500 wattsInput For Rated Output 1.0 milliwatt max.1000A2251000 watts CW. 10 kHz-225 MHz.Rated Output Power1000 wattsInput For Rated Output 1.0 milliwatt max.2500A2252500 watts CW. 10 kHz-225 MHz.Rated Output Power2500 watts, 10 kHz - 50 MHz2500 - 1900 watts, 50 MHz - 225 MHz150A100B150 watts CW . 10 kHz-100 MHz.Rated Output Power 150 watts Input For Rated Output 1.0 milliwatt max.150A220150 watts CW . 10 kHz-220 MHz.Rated Output Power 150 watts min.Input For Rated Output 1.0 milliwatt max.3500A100A3500 watts CW .10 kHz-100 MHz.Rated Output Power 3500 watts Input For Rated Output 1.0 milliwatt max.10,000L10,000watts CW .10 kHz-100MHz.Rated Output Power Nominal 12,600 watts 100A400100 watts CW . 100 kHz-400 MHz.Rated Output Power 100 watts min.Input For Rated Output 1.0 milliwatt max.150A400150 watts CW . 100 kHz-400 MHz.Rated Output Power 150 watts min.Input For Rated Output 1.0 milliwatt max.5000A250A5000 watts CW.100 kHz-250MHz. Rated Output Power5000 watts, 100 kHz - 100 MHz5000 - 3000 watts, 100 MHz - 250 MHz Input For Rated Output 1.0 milliwatt max.10000A250A10,000watts CW.100kHz-250MHz.Rated Output Power10,000 watts, 100 kHz - 100 MHz10,000 - 6,000 watts, 100 MHz - 250 MHz1W1000B1 watt CW. 100 kHz-1000 MHz.Rated Output Power 1.0 watts min.Input For Rated Output 1.0 milliwatt max.10W1000C10 watts CW. 500 kHz-1000 MHz.Rated Output Power10 watts min.Input For Rated Output 1.0 milliwatt max.30W1000B30 watts CW. 1-1000 MHz.Rated Output Power30 watts min.Input For Rated Output 1.0 milliwatt max.150A250150 watts CW. 100 kHz-250 MHz. Rated Output Power150 watts min. Input For Rated Output 1.0 milliwatt max.250W1000A250 watts CW. 80-1000 MHz. Rated Output Power250 watts min. Input For Rated Output 1.0 milliwatt max.500W1000A500 watts CW. 80-1000 MHz.Rated Output Power525 watts min.Input For Rated Output 1.0 milliwatt max.1000W1000C1000 watts CW. 80-1000 MHz.Rated Output Power1000 watts min.Input For Rated Output 1.0 milliwatt max.100W1000B100 watts CW. 1-1000 MHz. Rated Output Power100 watts Input For Rated Output 1.0 milliwatt max.150W1000150 watts CW. 80-1000 MHz. Rated Output Power150 watts Input For Rated Output 1.0 milliwatt max.50W1000B50 watts CW. 1-1000 MHz. Rated Output Power50 watts min. Input For Rated Output 1.0 milliwatt max.3000W10003000 watts CW. 80-1000 MHz. Rated Output Power2800 watts min. Input For Rated Output 1.0 milliwatts max.4000W10004000 watts CW. 80-1000 MHz.Rated Output Power3600 watts min.Input For Rated Output 1.0 milliwatts max.10WD100010 watts CW. dc-1000 MHz.Rated Output Power15 watts min.Input For Rated Output 1.0 milliwatt max.50WD100050 watts CW. dc-1000 MHz.Rated Output Power50 watts min.Input For Rated Output 1.0 milliwatt max.2000W1000A2000 watts CW. 80-1000 MHz. Rated Output Power1900 watts min. Input For Rated Output 1.0 milliwatts max.40AD1– DC - 1 MHz1000W1000C – 80 MHz - 1 GHz250W1000A – 80 MHz - 1 GHz350AH1 – 10 Hz - 1 MHz150A400 – 100 kHz - 400 MHz150A250– 100 kHz - 250 MHz150A220 – 10 kHz - 220 MHz100A250A – 10 kHz - 250 MHz50WD1000– DC - 1 GHz50W1000B – 1 MHz - 1 GHz30W1000B – 1 MHz - 1 GHz10WD1000– DC - 1 GHz10W1000C – 500 kHz - 1 GHz1W1000B – 100 kHz - 1 GHz25A250A 10 kHz - 250 MHz75A250A – 10 kHz - 250 MHz500A250A –10 kHz - 250 MHz150W1000 – 80 MHz - 1 GHz 500W1000A – 80 MHz - 1 GHz800A3A – 10 kHz -3 MHz1500A3 – 10 kHz -3 MHz1000A225 – 10 kHz - 225 MHz2000W1000A – 80 MHz - 1 GHz2500A225 – 10 kHz - 225 MHz3000W1000 – 80 MHz - 1 GHz3500A100A –10 kHz - 100 MHz4000W1000 – 80 MHz - 1 GHz5000A250A – 100 kHz - 250 MHz5000A3 – 10 kHz -3 MHz10,000A250A – 100 kHz - 250 MHz10,000L – 10 kHz - 100 MHz75A400– 10 kHz - 400 MHz100W1000B – 1 MHz - 1 GHz150A100B – 10 kHz - 100 MHzO U T P U T P O W E R (W A T T S )11010253040505075751001001001501501501501502503505005008001k 1k 1.5k 2k 2.5k 3k 3.5k 4k 5k 5k 10k 10k15801002003004005006007008009001000500100FREQUENCYFREQUENCY1920100A400 – 100 kHz - 400 MHza r RF/Microwave Instrumentationa r Modular RFa r Receiver Systemsa rEuropea rrf/microwave instrumentation •modular rf •receiver systems •ar europe© Copyright 2009 AR AR5694–7.5Ma rRF/Microwave Instrumentationa rModular RFa r Receiver Systemsa rEurope。
空气滤清器(中英对照)Hot!!
四、滤清器、汽车空调滤网系列Cleaners and Filters for automotive air conditionings series（一）KCFC4-001：压缩机用滤清器◆适用范围：主要应用于气动机械、内燃机等领域的空气粉尘过滤及回收；◆特点：1、过滤精度高，滤除所有较大颗粒（＞1-2μm）；2、过滤效率高，减少通过滤清器的颗粒数量；3、防止设备出现早期磨损，防止空气流量计损坏；4、过滤面积大、容尘量高、使用寿命长；5、湿挺度高，防止滤芯出现吸瘪、穿孔现象；6、具有阻燃性能，密封性能良好。
（一）KCFC4-001：Filter for compressor◆Applications: It mainly used in pneumatic machinery, internal combustion engines etc areas for collecting and purifying dust in air;◆Features:1.High filtering precision for purifying all the larger particles (> 1-2 u m);2.High purifying efficiency, reduce the amount of particle passing through the filter;3.It prevents the equipments from being worn too early, and avoid damage to air flow meter;4.It get large filtering area, large amount of dust-holding, long using life;5.High wet deflection to prevent the filter elements from being shrivelled or perforated;6.Fire resistance, well-sealing property.（二）KCFC4-002：车用空气滤清器◆适用范围：主要应用于气动机械、内燃机等领域的空气粉尘过滤及回收；◆特点：1、过滤精度高，滤除所有较大颗粒（＞1-2μm）；2、过滤效率高，减少通过滤清器的颗粒数量；3、防止设备出现早期磨损，防止空气流量计损坏；4、压差低，确保发动机有最佳的空燃比，降低过滤损失；5、过滤面积大、容尘量高、使用寿命长；6、湿挺度高，防止滤芯出现吸瘪、穿孔现象；7、具有阻燃性能，密封性能良好。
进口傅里叶红外光谱仪参数
进口傅里叶红外光谱仪参数一、仪器参数该傅里叶红外光谱仪型号为FTIR-7600，主要参数如下：1. 光源：氮化硼红外光源，波长为3500cm-1至250cm-1。
2. 波数精度：0.01cm-1。
3. 分辨率：最高可达0.4cm-1。
4. 扫描速度：0.5cm-1至64cm-1。
5. 采样方式：ATR、反射、透射样品盒。
6. 数据处理软件：支持分析软件和质量控制软件。
二、仪器功能1. 高灵敏度检测FTIR-7600傅里叶红外光谱仪采用氮化硼红外光源，具有高能量输出和稳定性，能够检测到非常微小的信号。
该仪器的灵敏度高，可以检测到很低浓度物质的信号。
2. 多样化的采样方式FTIR-7600傅里叶红外光谱仪采用的样品盒有ATR、反射、透射三种模式。
这些不同的采样模式可以适应不同种类的样品，包括固体、液体和气体。
用户可以根据需要采用不同的采样方式。
3. 高精度波数测量FTIR-7600傅里叶红外光谱仪具有高精度的波数测量能力，可以以0.01cm-1的分辨率测量样品的峰位。
这个分辨率可以检测非常细微的差异，有助于进行高质量的分析。
4. 快速扫描速度FTIR-7600傅里叶红外光谱仪具有快速的扫描速度，最高可达64cm/s。
这样的扫描速度可以大大缩短测试时间，提高工作效率。
5. 数据处理功能FTIR-7600傅里叶红外光谱仪具有强大的数据处理功能，可以通过配套的分析软件和质量控制软件进行数据处理和分析。
这些软件可以提供多种分析和模型建立方法，可帮助用户快速分析样品和识别成分。
三、总结FTIR-7600傅里叶红外光谱仪是一款功能强大、多样化的仪器。
其高灵敏度检测、多样的采样方式、高精度波数测量、快速扫描速度和数据处理功能，使其在食品、药品、化工、环保等领域得到了广泛的应用。
四、应用领域1. 食品行业食品行业是FTIR-7600傅里叶红外光谱仪的主要应用领域之一。
这种仪器可以用于食品成分的定量和质量控制。
可以对食品中的糖类、脂肪、蛋白质等成分进行分析和测量。
FPGA可编程逻辑器件芯片XCKU3P-1FFVA676E中文规格书
DS060 (v2.0) March 1, 2013Product SpecificationIntroduction The Spartan ® and the Spartan-XL FPGA families are a high-volume production FPGA solution that delivers all the key requirements for ASIC replacement up to 40,000 gates.These requirements include high performance, on-chip RAM, core solutions and prices that, in high volume,approach and in many cases are equivalent to mask pro-grammed ASIC devices.By streamlining the Spartan series feature set, leveraging advanced process technologies and focusing on total cost management, the Spartan series delivers the key features required by ASIC and other high-volume logic users while avoiding the initial cost, long development cycles and inher-ent risk of conventional ASICs. The Spartan and Spar-tan-XL families in the Spartan series have ten members, as shown in Table 1.Spartan/Spartan-XL FPGA Features Note: The Spartan series devices described in this data sheet include the 5V Spartan family and the 3.3V Spartan-XL family. See the separate data sheets for more advanced members for the Spartan Series.•First ASIC replacement FPGA for high-volume production with on-chip RAM •Density up to 1862 logic cells or 40,000 system gates •Streamlined feature set based on XC4000 architecture •System performance beyond 80MHz •Broad set of AllianceCORE and LogiCORE™predefined solutions available •Unlimited reprogrammability •Low cost•System level features-Available in both 5V and 3.3V versions-On-chip SelectRAM™ memory-Fully PCI compliant-Full readback capability for program verificationand internal node observability-Dedicated high-speed carry logic-Internal 3-state bus capability-Eight global low-skew clock or signal networks-IEEE 1149.1-compatible Boundary Scan logic-Low cost plastic packages available in all densities-Footprint compatibility in common packages•Fully supported by powerful Xilinx ISE ® Classicsdevelopment system-Fully automatic mapping, placement and routingAdditional Spartan-XL Family Features • 3.3V supply for low power with 5V tolerant I/Os•Power down input•Higher performance•Faster carry logic•More flexible high-speed clock network•Latch capability in Configurable Logic Blocks•Input fast capture latch•Optional MUX or 2-input function generator on outputs•12 mA or 24 mA output drive•5V and 3.3V PCI compliant•Enhanced Boundary Scan•Express Mode configuration •Spartan and Spartan-XL FPGA Families Data SheetDS060 (v2.0) March 1, 2013Product SpecificationTable 1: Spartan and Spartan-XL Field Programmable Gate Arrays DeviceLogicCells Max System Gates Typical Gate Range (Logic and RAM)(1)CLB Matrix Total CLBs No. of Flip-flops Max. Avail. User I/O Total Distributed RAM Bits XCS05 and XCS05XL2385,0002,000-5,00010 x 10100360773,200XCS10 and XCS10XL46610,0003,000-10,00014 x 141966161126,272XCS20 and XCS20XL95020,0007,000-20,00020 x 204001,12016012,800XCS30 and XCS30XL136830,00010,000-30,00024 x 245761,53619218,432XCS40 and XCS40XL 186240,00013,000-40,00028 x 287842,016205(2)25,088Notes:1.Max values of T ypical Gate Range include 20-30% of CLBs used as RAM.2.XCS40XL provided 224 max I/O in CS280 package discontinued by PDN2004-01.Spartan and Spartan-XL FPGA Families Data Sheet DS060 (v2.0) March 1, 2013Product SpecificationGeneral OverviewSpartan series FPGAs are implemented with a regular, flex-ible, programmable architecture of Configurable Logic Blocks (CLBs), interconnected by a powerful hierarchy of versatile routing resources (routing channels), and sur-rounded by a perimeter of programmable Input/Output Blocks (IOBs), as seen in Figure 1. They have generous routing resources to accommodate the most complex inter-connect patterns.The devices are customized by loading configuration data into internal static memory cells. Re-programming is possi-ble an unlimited number of times. The values stored in these memory cells determine the logic functions and intercon-nections implemented in the FPGA. The FPGA can either actively read its configuration data from an external serial PROM (Master Serial mode), or the configuration data can be written into the FPGA from an external device (Slave Serial mode).Spartan series FPGAs can be used where hardware must be adapted to different user applications. FPGAs are ideal for shortening design and development cycles, and also offer a cost-effective solution for production rates well beyond 50,000 systems per month.Figure 1: Basic FPGA Block Diagram。
MEMORY存储芯片MT29F64G08CBAAAWP-IT中文规格书
DQ12 VDDQ
VSS
UDQS# DQ14 VSSQ
UDQS DQ10 VDDQ
DQ8 VSSQ
VDD
LDM VSSQ VDDQ
DQ1 DQ3 VSSQ
VDD
VSS
VSSQ
DQ7 DQ5 VDDQ
CK
ห้องสมุดไป่ตู้VSS
NC
CK# VDD CKE
A10/AP ZQ
NC
NC VREFCA VSS
A12/BC# BA1 VDD
Symbol A[15:13], A12/BC#, A11, A10/AP, A[9:0]
BA[2:0] CK, CK#
CKE
CS# DM ODT RAS#, CAS#, WE# RESET#
Type Input
Input Input Input
Input Input Input Input Input
09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN
4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/ disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA.
蓝牙芯片功能列表
名称
支持在iphone上显示蓝牙设备电池电量
新特性：芯片本身支持BLE HID Mode
新特性：支持简单的语音识别,支持GAIA，支持在iphone 上显示蓝牙设备电池电量
新特性：支持简单的语音识别，支持GAIA，支持在iphone 上显示蓝牙设备电池电量
新特性：支持简单的语音识别，支持GAIA，支持在iphone 上显示蓝牙设备电池电量，支持wired audio和USB audio mode
新特性：支持简单的语音识别，支持GAIA，支持在iphone 上显示蓝牙设备电池电量，支持wired audio和USB audio mode。
支持APTX解码
新特性：支持简单的语音识别，支持GAIA，支持在iphone 上显示蓝牙设备电池电量，支持wired audio和USB audio mode。
支持APTX解码，支持6个capacitive touch button。
MEMORY存储芯片MT29F64G08CBAAAWP-ZA中文规格书
DQ Input Timing
Data setup time to DQS, DQS#
VOH(AC)
VOL(AC)
Calculation
VOH(AC) - VOL(AC) ΔTRse
VOH(AC) - VOL(AC) ΔTFse
PDF: 09005aef8591dc1f 8Gb_DDR3L.pdf - Rev. C 10/15 EN
Speed Bin Tables
8Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables
ACTIVATE-to-PRECHARGE command period
ACTIVATE-to-ACTIVATE command period
ACTIVATE-to-AC- x4/x8/x16 (2KB TIVATE minimum page size) command period
Four ACTIVATE x4/x8/x16 (2KB
27
27
27
27
512 – 512 – 512 – 512 – 215 – 140 – 80 – 60 –
375 – 300 – 240 – 220 – 365 – 290 – 205 – 185 –
500 – 425 – 340 – 320 – 285 – 210 – 150 – 130 –
375 – 300 – 240 – 220 – 900 – 780 – 620 – 560 –
Figure 27: Reference Output Load for AC Timing and Output Slew Rate
DUT
VDDQ/2 VREF
DQ DQS DQS#
CommScope 7-8端口扇形天线说明书
8-port sector antenna, 4x 790–960 and 4x 1695–2690 MHz, 65°HPBW, 4x RET with manual override. Bands cascaded SRET.Integrated Internal Remote Electrical Tilt (RET), with independent control of electrical tilt withmanual override on all arraysAll Internal RET actuators are connected in “Cascaded SRET” configurationThe RET interface comprises one pair of AISG input/output portsUses the 4.3-10 connector which is 40 percent smaller than the 7-16 DIN connectorOBSOLETEThis product was discontinued on: March 31, 2023Replaced By:RRVV-65B-R4-V28-port sector antenna, 4x 694–960 and 4x 1695–2690 MHz, 65° HPBW, 4x RETGeneral SpecificationsAntenna Type SectorBand MultibandColor Light Gray (RAL 7035)Grounding Type RF connector inner conductor and body grounded to reflector andmounting bracketPerformance Note Outdoor usage | Wind loading figures are validated by wind tunnelmeasurements described in white paper WP-112534-ENRadome Material Fiberglass, UV resistantRadiator Material Low loss circuit boardReflector Material AluminumRF Connector Interface 4.3-10 FemaleRF Connector Location BottomRF Connector Quantity, high band4RF Connector Quantity, low band4RF Connector Quantity, total8Remote Electrical Tilt (RET) InformationRET Interface8-pin DIN Female | 8-pin DIN MaleRET Interface, quantity 1 female | 1 male17Page ofPage of 27Input Voltage 10–30 VdcInternal RETHigh band (2) | Low band (2)Power Consumption, idle state, maximum 2 W Power Consumption, normal conditions, maximum 13 WProtocol3GPP/AISG 2.0 (Single RET)DimensionsWidth 498 mm | 19.606 in Depth 197 mm | 7.756 in Length2100 mm | 82.677 in Net Weight, without mounting kit39 kg | 85.98 lbArray LayoutPort ConfigurationElectrical SpecificationsImpedance50 ohmOperating Frequency Band1695 – 2690 MHz | 790 – 960 MHzPolarization±45°Electrical SpecificationsFrequency Band, MHz790–862880–9601695–18801850–19901920–21802300–25002500–2690Gain, dBi14.915.616.616.817.418.118.2Beamwidth, Horizontal,74636366686263degreesBeamwidth, Vertical, degrees11.310.27.67 6.6 5.6 5.2Beam Tilt, degrees0–100–100–100–100–100–100–10USLS (First Lobe), dB18181818181818Front-to-Back Ratio at 180°,35353438403940dB28282828282828Isolation, Cross Polarization,dBIsolation, Inter-band, dB28282828282828VSWR | Return loss, dB 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0PIM, 3rd Order, 2 x 20 W, dBc-150-150-150-150-150-150-15030030025025025025025037Page ofInput Power per Port,maximum, watts300300250250250250250 Electrical Specifications, BASTAFrequency Band, MHz790–862880–9601695–18801850–19901920–21802300–25002500–2690 Gain by all Beam Tilts,average, dBi14.715.416.416.516.917.817.9Gain by all Beam TiltsTolerance, dB±0.5±0.3±0.4±0.6±0.7±0.5±0.5Gain by Beam Tilt, average, dBi 0 ° | 14.75 ° | 14.710 ° | 14.60 ° | 15.55 ° | 15.510 ° | 15.40 ° | 16.45 ° | 16.410 ° | 16.40 ° | 16.55 ° | 16.510 ° | 16.40 ° | 16.95 ° | 16.910 ° | 16.90 ° | 17.95 ° | 17.910 ° | 17.70 ° | 17.85 ° | 17.910 ° | 17.9Beamwidth, HorizontalTolerance, degrees±4.2±4.7±3.3±7.3±4.4±3.4±2.6Beamwidth, VerticalTolerance, degrees±0.5±0.4±0.5±0.3±0.5±0.2±0.2USLS, beampeak to 20° abovebeampeak, dB18181818181718Front-to-Back Total Power at180° ± 30°, dB24252731303132CPR at Boresight, dB20182020181618CPR at Sector, dB119911121111Mechanical SpecificationsWind Loading @ Velocity, frontal803.0 N @ 150 km/h (180.5 lbf @ 150 km/h)Wind Loading @ Velocity, lateral275.0 N @ 150 km/h (61.8 lbf @ 150 km/h)Wind Loading @ Velocity, maximum1,040.0 N @ 150 km/h (233.8 lbf @ 150 km/h)Wind Loading @ Velocity, rear661.0 N @ 150 km/h (148.6 lbf @ 150 km/h)Wind Speed, maximum200 km/h (124 mph)Packaging and WeightsWidth, packed565 mm | 22.244 inDepth, packed312 mm | 12.283 inLength, packed2286 mm | 90 inWeight, gross60 kg | 132.277 lbRegulatory Compliance/CertificationsAgency ClassificationCE Compliant with the relevant CE product directivesPage of47CHINA-ROHS Above maximum concentration valueISO 9001:2015Designed, manufactured and/or distributed under this quality management system ROHS Compliant/ExemptedUK-ROHSCompliant/ExemptedIncluded ProductsT-029-GL-E–Adjustable Tilt Pipe Mounting Kit for 2.362"-4.5" (60-115mm) OD round members for panelantennas. Includes 2 clamp sets.* FootnotesPerformance Note Severe environmental conditions may degrade optimum performancePage of57Adjustable Tilt Pipe Mounting Kit for 2.362"-4.5" (60-115mm) OD roundmembers for panel antennas. Includes 2 clamp sets.Product ClassificationProduct Type Adjustable tilt mounting kitGeneral SpecificationsApplication OutdoorColor SilverDimensionsCompatible Length, maximum2850 mm | 112.205 inCompatible Length, minimum1500 mm | 59.055 inCompatible Diameter, maximum115 mm | 4.528 inCompatible Diameter, minimum60 mm | 2.362 inAntenna-to-Pipe Distance85 mm | 3.346 inBracket-to-Bracket Distance1400 mm | 55.118 inWeight, net 6 kg | 13.228 lbMaterial SpecificationsMaterial Type Galvanized steelMechanical SpecificationsMechanical Tilt0°–8°Packaging and WeightsIncluded Brackets | HardwarePackaging quantity1Regulatory Compliance/CertificationsAgency ClassificationCE Compliant with the relevant CE product directives67Page ofCHINA-ROHS Below maximum concentration valueISO 9001:2015Designed, manufactured and/or distributed under this quality management system REACH-SVHC Compliant as per SVHC revision on /ProductCompliance ROHS CompliantUK-ROHSCompliantPage of77。
MEMORY存储芯片MT29F4G08AACHC-ET C中文规格书
READ PAGE TWO-PLANE 00h-00h-30hThe READ PAGE TWO-PLANE (00h-00h-30h) operation is similar to the PAGE READ (00h-30h) operation. It transfers two pages of data from the NAND Flash array to the da-ta registers. Each page must be from a different plane on the same die.To enter the READ PAGE TWO-PLANE mode, write the 00h command to the command register, and then write five address cycles for plane 0 (BA6 = 0). Next, write the 00h command to the command register, and five address cycles for plane 1 (BA6 = 1). Final-ly, issue the 30h command. The first-plane and second-plane addresses must meet the two-plane addressing requirements, and, in addition, they must have identical column addresses.After the 30h command is written, page data is transferred from both planes to their re-spective data registers in t R. During these transfers, R/B# goes LOW. When the transfers are complete, R/B# goes HIGH. To read out the data from the plane 0 data register,pulse RE# repeatedly. After the data cycle from the plane 0 address completes, issue a RANDOM DATA READ TWO-PLANE (06h-E0h) command to select the plane 1 address,then repeatedly pulse RE# to read out the data from the plane 1 data register.Alternatively, the READ STATUS (70h) command can monitor data transfers. When the transfers are complete, status register bit 6 is set to 1. To read data from the first of the two planes, the user must first issue the RANDOM DATA READ TWO-PLANE (06h-E0h)command and pulse RE# repeatedly.When the data cycle is complete, issue a RANDOM DATA READ TWO-PLANE (06h-E0h)command to select the other plane. To output the data beginning at the specified col-umn address, pulse RE# repeatedly.Use of the READ STATUS ENHANCED (78h) command is prohibited during and follow-ing a PAGE READ TWO-PLANE operation.4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Read OperationsFigure 43: READ PAGE TWO-PLANE (00h-00h-30h) OperationWE#ALERE#I/OxR/B#Program OperationsProgram operations are used to move data from the cache or data registers to the NANDarray. During a program operation the contents of the cache and/or data registers aremodified by the internal control logic.Within a block, pages must be programmed sequentially from the least significant pageaddress to the most significant page address (0, 1, 2, ….., 63). During a program opera-tion, the contents of the cache and/or data registers are modified by the internal controllogic.Program OperationsThe PROGRAM PAGE (80h-10h) command, when not preceded by the PROGRAM PAGETWO-PLANE (80h-11h) command, programs one page from the cache register to theNAND Flash array. When the die (LUN) is ready (RDY = 1, ARDY = 1), the host shouldcheck the FAIL bit to verify that the operation has completed successfully.Program Cache OperationsThe PROGRAM PAGE CACHE (80h-15h) command can be used to improve program op-eration system performance. When this command is issued, the die (LUN) goes busy(RDY = 0, ARDY = 0) while the cache register contents are copied to the data register,and the die (LUN) is busy with a program cache operation (RDY = 1, ARDY = 0. Whilethe contents of the data register are moved to the NAND Flash array, the cache registeris available for an additional PROGRAM PAGE CACHE (80h-15h) or PROGRAM PAGE(80h-10h) command.For PROGRAM PAGE CACHE series (80h-15h) operations, during the die (LUN) busytimes, t CBSY and t LPROG, when RDY = 0 and ARDY = 0, the only valid commands arestatus operations (70h, 78h) and reset (FFh). When RDY = 1 and ARDY = 0, the only validcommands during PROGRAM PAGE CACHE series (80h-15h) operations are status op-erations (70h, 78h), PROGRAM PAGE CACHE (80h-15h), PROGRAM PAGE (80h-10h),RANDOM DATA INPUT (85h), PROGRAM FOR INTERNAL DATA INPUT (85h), and RE-SET (FFh).Two-Plane Program OperationsThe PROGRAM PAGE TWO-PLANE (80h-11h) command can be used to improve pro-gram operation system performance by enabling multiple pages to be moved from thecache registers to different planes of the NAND Flash array. This is done by prependingone or more PROGRAM PAGE TWO-PLANE (80h-11h) commands in front of the PRO-GRAM PAGE (80h-10h) command.Two-Plane Program Cache OperationsThe PROGRAM PAGE TWO-PLANE (80h-11h) command can be used to improve pro-gram cache operation system performance by enabling multiple pages to be movedfrom the cache registers to the data registers and, while the pages are being transferredfrom the data registers to different planes of the NAND Flash array, free the cache regis-ters to receive data input from the host. This is done by prepending one or more PRO-GRAM PAGE TWO-PLANE (80h-11h) commands in front of the PROGRAM PAGECACHE (80h-15h) command.。
IRFP4368PBF中文资料
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e
IAR
Avalanche Current d
元器件交易网
PD - 97322
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Qg Qgs Qgd Qsync
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd)
100
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10 0.1
4.5V
≤60µs PULSE WIDTH Tj = 25°C
MEMORY存储芯片MT29F4G08ABADAWP D中文规格书
ArchitectureThese devices use NAND Flash electrical and command interfaces. Data, commands,and addresses are multiplexed onto the same pins and received by I/O control circuits.The commands received at the I/O control circuits are latched by a command register and are transferred to control logic circuits for generating internal signals to control de-vice operations. The addresses are latched by an address register and sent to a row de-coder to select a row address, or to a column decoder to select a column address.Data is transferred to or from the NAND Flash memory array, byte by byte (x8) or word by word (x16), through a data register and a cache register.The NAND Flash memory array is programmed and read using page-based operations and is erased using block-based operations. During normal page operations, the data and cache registers act as a single register. During cache operations, the data and cache registers operate independently to increase data throughput. The status register reports the status of die operations.Figure 8: NAND Flash Die (LUN) Functional Block DiagramV V LOCK Note: 1.The LOCK pin is used on the 1.8V device.4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory ArchitecturePDF: 09005aef83b25735m60a_4gb_ecc_nand.pdf – Rev. M 2/12 ENDevice and Array Organization Figure 9: Array Organization – MT29F4G08 (x8)Cache RegisterData Register 2048 blocksper plane4096 blocksper device= (2K + 64 bytes)= (2K + 64) bytes x 64 pages = (128K + 4K) bytes = (128K + 4K) bytes x 2048 blocks = 2112Mb= 2112Mb x 2 planes= 4224Mbeven-numbered blocks(0, 2, 4, 6, ..., 4092, 4094)odd-numbered blocks (1, 3, 5, 7, ..., 4093, 4095)2112 bytesTable 2: Array Addressing – MT29F4G08 (x8)Notes: 1.Block address concatenated with page address = actual page address. CAx = column ad-dress; PAx = page address; BAx = block address.2.If CA11 is 1, then CA[10:6] must be 0.3.BA6 controls plane selection.4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Device and Array OrganizationPDF: 09005aef83b25735m60a_4gb_ecc_nand.pdf – Rev. M 2/12 ENFigure 10: Array Organization – MT29F4G16 (x16)Cache RegisterData Register 2048 blocksper plane4096 blocksper device= (1K + 32 words)= (1K + 32) words x 64 pages = (64K + 2K) words = (64K + 2K) words x 2048 blocks = 2112Mb= 2112Mb x 2 planes= 4224Mb Plane ofeven-numbered blocks(0, 2, 4, 6, ..., 4092, 4094)Plane of odd-numbered blocks (1, 3, 5, 7, ..., 4093, 4095)1056 wordsTable 3: Array Addressing – MT29F4G16 (x16)Notes: 1.Block address concatenated with page address = actual page address. CAx = column ad-dress; PAx = page address; BAx = block address.2.If CA10 = 1, then CA[9:5] must be 0.3.BA6 controls plane selection.4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Device and Array OrganizationPDF: 09005aef83b25735m60a_4gb_ecc_nand.pdf – Rev. M 2/12 EN。
sa84g符合yy0167标准
sa84g符合yy0167标准：深度评估与理解在当今社会，标准化已经成为了产品设计、制造和质量管理的基石。
各行各业均制定了相应的标准，以确保产品的质量、安全和可靠性。
在汽车行业，sa84g是一项重要的标准，它旨在确保汽车零部件的质量和性能符合国际标准。
yy0167作为医疗器械行业的标准，也对产品的质量和安全性提出了严格要求。
本文将针对这两个标准进行全面评估，并探讨其深度和广度，以便读者能更全面地理解这一主题。
sa84g符合yy0167标准的深度评估，首先需要了解这两个标准的具体内容和要求。
sa84g标准是针对汽车零部件的，它涉及到零部件的材料、尺寸、性能指标等方面，要求零部件在使用过程中能够确保安全、可靠。
而yy0167标准则是针对医疗器械的，它对医疗器械的设计、生产、使用、维护等方面提出了详细的要求，旨在确保医疗器械的质量和安全性。
通过对这两个标准的深入研究，可以更好地理解它们的核心内容和意义。
深度评估还需要对这两个标准的实际应用进行分析。
在汽车行业，sa84g标准的实施不仅关乎汽车零部件的质量，还关系到整车的安全性能。
而在医疗器械行业，yy0167标准的实施直接关系到患者的生命健康。
对这两个标准的实际应用进行深入分析，可以帮助人们更好地理解它们在实际生产和使用中的重要性和意义。
深度评估还需要对这两个标准的制定和修订过程进行研究。
sa84g标准和yy0167标准的制定是一个不断演进的过程，它们随着技术的发展和行业的变化不断进行修订和更新。
通过对这两个标准的制定和修订过程进行深入研究，可以更好地理解它们的时代背景和行业特点，从而更好地把握它们的要求和精神。
深度评估需要对这两个标准的国际化和标准化过程进行全面分析。
sa84g标准和yy0167标准都是国际化的标准，它们旨在确保全球范围内的产品质量和安全性。
这两个标准也是标准化的典范，它们为其他行业的标准制定和实施提供了宝贵经验。
通过对这两个标准的国际化和标准化过程进行全面分析，可以更好地理解它们在全球范围内的影响和作用，以及它们在标准化进程中的地位和作用。
MEMORY存储芯片MT29F4G08ABAEAWP E中文规格书
Table 149: I DD, I PP, and I DDQ Current Limits; Die Rev. B (0° ื T Cื 85°C) (Continued)Notes: 1.Applicable for MR2 settings A7 = 0 and A6 = 0; manual mode with normal temperaturerange of operation (0–85°C).2.Applicable for MR2 settings A7 = 1 and A6 = 0; manual mode with extended tempera-ture range of operation (0–95°C).3.Applicable for MR2 settings A7 = 0 and A6 = 1; manual mode with reduced temperaturerange of operation (0–45°C).4.I DD6E, I DD6R, I DD6A values are verified by design and characterization, and may not besubject to production test.5.When additive latency is enabled for I DD0, current changes by approximately 0%.6.When additive latency is enabled for I DD1, current changes by approximately +5%(x4/x8),+4%(x16).7.When additive latency is enabled for I DD2N, current changes by approximately 0%.8.When DLL is disabled for I DD2N, current changes by approximately –23%.9.When CAL is enabled for I DD2N, current changes by approximately –25%.10.When gear-down is enabled for I DD2N, current changes by approximately 0%.11.When CA parity is enabled for I DD2N, current changes by approximately +7%.12.When additive latency is enabled for I DD3N, current changes by approximately +1%.13.When additive latency is enabled for I DD4R, current changes by approximately +5%.14.When read DBI is enabled for I DD4R, current changes by approximately 0%.15.When additive latency is enabled for I DD4W, current changes by approximately +3%(x4/x8), +4%(x16).16.When write DBI is enabled for I DD4W, current changes by approximately 0%.17.When write CRC is enabled for I DD4W, current changes by approximately +10%(x4/x8),+10%(x16).18.When CA parity is enabled for I DD4W, current changes by approximately +12% (x8),+12% (x16).19.When 2X REF is enabled for I DD5R, current changes by approximately –14%.20.When 4X REF is enabled for I DD5R, current changes by approximately –33%.21.I PP0 test and limit is applicable for I DD0 and I DD1 conditions.22.I PP3N test and limit is applicable for all I DD2x, I DD3x, I DD4x and I DD8 conditions; that is, test-ing I PP3N should satisfy the I PP s for the noted I DD tests.23.DDR4-1600 and DDR4-1866 use the same I DD limits as DDR4-2133.24.The I DD values must be derated (increased) when operated outside of the range 0°C ื T Cื 85°C:When T C < 0°C: I DD2P, and I DD3P must be derated by 6%; I DD4R and I DD4W must be deratedby 4%; I DD6, I DD6ET, and I DD7 must be derated by 11%.When T C > 85°C: I DD0, I DD1, I DD2N, I DD2NT, I DD2Q, I DD3N, I DD3P, I DD4R, I DD4W, and I DD5R mustbe derated by 3%; I DD2P must be derated by 40%. These values are verified by designand characterization, and may not be subject to production test.25.I PP6x is applicable to I DD6N, I DD6E, I DD6R and I DD6A conditions.Table 150: I DD, I PP, and I DDQ Current Limits; Die Rev. D (0° ื T Cื 85°C)8Gb: x4, x8, x16 DDR4 SDRAM Current Specifications – Measurement ConditionsTable 150: I DD , I PP , and I DDQ Current Limits; Die Rev. D (0° ื T C ื 85°C) (Continued)Notes:1.Applicable for MR2 settings A7 = 0 and A6 = 0; manual mode with normal temperaturerange of operation (0–85°C).2.Applicable for MR2 settings A7 = 1 and A6 = 0; manual mode with extended tempera-ture range of operation (0–95°C).3.Applicable for MR2 settings A7 = 0 and A6 = 1; manual mode with reduced temperaturerange of operation (0–45°C).4.I DD6E , I DD6R , I DD6A values are verified by design and characterization, and may not besubject to production test.5.When additive latency is enabled for I DD0, current changes by approximately 0%.8Gb: x4, x8, x16 DDR4 SDRAM Current Specifications – Limits8Gb: x4, x8, x16 DDR4 SDRAM Current Specifications – Measurement Conditions。
常用染料特征
经常使用抗体标识表记标帜荧光染料的特性及其应用之五兆芳芳创作1、FITC：激起波长488nm，最大发射波长525nm.1）其标识表记标帜的抗体适用于所有配备488nm氩离子激光器的流式细胞仪；2）在流式细胞仪的FL1通道检测；3）可用于荧鲜明微镜技巧4）荧光强度易受PH值影响，PH值下降时其荧光强度削弱.2、Alexa Fluor 488：激起波长488nm，最大发射波长519nm. 1）其标识表记标帜的抗体适用于所有配备488nm氩离子激光器的流式细胞仪；2）在流式细胞仪的FL1通道检测；3）具有超乎寻常的光稳定性，很是适用于荧鲜明微镜技巧；4）在较宽的PH值规模内保持稳定（PH4～10）.3、Cy3：激起波长488nm，最大发射波长570nm.1）其标识表记标帜的抗体适用于所有配备488nm氩离子激光器的流式细胞仪；2）在流式细胞仪的FL2通道检测；3）适用于荧鲜明微镜技巧；4）为小份子染料，很是适合需小份子染料的流式细胞术，荧光强度低于PE.4、Cy5：激起波长633/635nm，最大发射波长670nm.1）其标识表记标帜的抗体适用于所有配备633nm氩离子激光器的流式细胞仪；2）在流式细胞仪的FL4通道检测；3）适用于荧鲜明微镜技巧；4）同样为小份子染料，很是适合需小份子染料的流式细胞术，荧光强度低于APC.5）与单核和粒细胞非特异性结合多，易出现假阳性结果.5、PE：激起波长488nm，最大发射波长575nm.1）其标识表记标帜的抗体适用于所有配备488nm氩离子激光器的流式细胞仪；2）在流式细胞仪的FL2通道检测；3）其荧光泯灭性强，不适用于传统的荧鲜明微镜技巧，但适用于激光共聚焦显微镜技巧.6、PE-TR：激起波长488nm，最大发射波长615nm.1）在Beckman Coulter流式细胞仪的FL3通道检测；2）可适用于小功率激光器的流式细胞仪，也可使用于大功率激光器的大流式细胞仪.7、PE-Alexa Fluor 610：激起波长488nm，最大发射波长628nm. 1）在Beckman Coulter流式细胞仪的FL3通道检测；2）荧光强度高；3）可适用于小功率激光器的流式细胞仪，也可使用于大功率激光器的大流式细胞仪.8、PE-Alexa Fluor 647：激起波长488nm，最大发射波长668nm. 1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2）不容易湮灭；3)可适用于小功率激光器的流式细胞仪，也可使用于大功率激光器的大流式细胞仪.9、PE-Cy5：激起波长488nm，最大发射波长670nm.1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2)可适用于大、小功率的流式细胞仪；3）淬灭性强，不适用于传统的荧鲜明微镜技巧；4)可与FITC、PE搭配，荧光搅扰小、抵偿小，但不宜与APC 搭配.5）与单核细胞和粒细胞非特异性结合多.10、PE-Cy5.5：激起波长488nm，最大发射波长694nm.1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2)可适用于大、小功率的流式细胞仪；3）淬灭性强，不适用于传统的荧鲜明微镜技巧；4)可与FITC、PE、APC搭配，荧光搅扰小、抵偿小，是APC 比较理想的搭配.11、PE-Alexa Fluor 700：激起波长488nm，最大发射波长723nm.1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2）光淬灭性很强，要绝对避光.12、PE-Cy7：激起波长488nm，最大发射波长767nm.1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2)可适用于大、小功率的流式细胞仪；3）光淬灭性很强，要绝对避光；4）可与FITC、PE搭配，与FITC无光谱重叠，与APC搭配荧光搅扰小，抵偿小，是比较理想的搭配.13、TR：激起波长595nm，最大发射波长615nm.1）其标识表记标帜的抗体适用于配备Texas Red激光器的流式细胞仪；2）荧光不容易淬灭，可用于荧鲜明微镜.14、APC：激起波长633/635nm，最大发射波长660nm. 1）其标识表记标帜的抗体适用于所有配备氦氖激光器的流式细胞仪；2）在BD细胞仪的FL4通道检测，在Beckman Coulter细胞仪只有配备双激光器的FC500才干检测到.15、APC-Cy5.5：激起波长633/635nm，最大发射波长668nm. 1）其标识表记标帜的抗体适用于所有配备氦氖激光器的流式细胞仪；2）主要用于四色以上的流式细胞术.16：PerCP：激起波长488nm，最大发射波长677nm.1）在Beckman Coulter流式细胞仪的FL4通道检测，BD细胞仪FL3通道检测；2）可于FITC、PE搭配，荧光光谱重叠少，对随细胞的特异性结合少，但量子产量较低，适用于较高表达物的检测.。
WF480RA规格书
版本号：V3.0编写：确认：产品规格书产品名称：433M/315M无线接收芯片产品型号：客户：确认：日期：WF480RA深圳市伟烽恒科技有限公司1.概述WF480RA是一款高集成度超低功耗的单片ASK/OOK 射频接收芯片。
高频信号接收功能全部集成于片内以达到用最少的外围器件和最低的成本获得最可靠的接收效果。
因此它是真正意义上的“天线高频调制信号输入，数字解调信号输出”的单片接收器件。
工作电压范围2.0V~5.5V 和非常高的灵敏度-110dBm，以及超低的工作电流1.8mA@315MHz，使之非常适合各种低功耗要求的设备等。
芯片内自动完成所有的RF和IF调谐，所以在开发和生产中就省略了手工调节的工艺工程，进而降低成本，加快产品上市。
2.特性完美兼容SYN480完全的单片UHF接收器件频率范围：300MHz - 440 MHz工作电压：2.0V - 5.5V低功耗模式：1.8mA (315MHz，完全工作)2.4mA (433.92MHz，完全工作)0.01uA (关断模式)接收灵敏度-110 dBm @ 315MHz-112 dBm @ 433MHz数据速率：10Kpbs @ 315MHz10Kpbs @ 433MHz标准的CMOS接口控制及解码数据输出RF天线辐射非常低最经济的外围器件设计方案集成度高、外围简单、稳定可靠3. 应用领域遥控扇遥控灯遥控门遥控键盘远距离RFID智能家居控制器遥控玩具无线加密设备接收器短距离遥控器4．典型应用315MHz 典型电路433.92MHz 典型电路注：也可直接替代SYN480R 。
如果使用以上外围元件则效果更佳。
5．脚位图6．引脚描述名称引脚功能1 VSSRF 接地管脚2 ANT RF 信号输入脚3 VDDRF 接电源管脚，外加去耦电容到地 4CTH用于内部数据比较器的参考信号WF480RA WF480RA WF480RA WF480RA5 DO 数据信号输出6 SHUT 关断模式：接电源；工作模式：接地7 CAGC 外接CAGC 电容8 REFOSC 外接晶振管脚注：带宽已设置为2500Hz。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
1515 1535 18 1620 x1E3
A A kA A²s V V mohm
F (AV) FSM
I² t V FM V F(TO) r
F
Forward current = 1570 A
25 140 140
2.4 1.25 0.500
SWITCHING
t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery di/dt= 400 A/µs 140 I F = 1000 A di/dt= VR = 250 A/µs 100 V 800 0.5 40 V A 140 6 2000 µs µC
Tj = 25 °C
IF VFR
20 VF 10 0 0 200 400 600 di/dt [A/µs] 800 1000 1200
REVERSE RECOVERY CHARGE Tj = 140 °C 2500
1000 A
REVERSE RECOVERY CURRENT Tj = 140 °C 1000
ARF676 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
80 70 60
Tj = 140 °C
50 VFR [V] 40 30
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED
18.0 16.0 14.0 Zth j-h [°C/kW] 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.001
Distributed by All the characteristics given in this data sheet are guaranteed only with clamping force, cleaned and lubricated heatsink, surfaces with flatness < and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over background) and characteristics is reported. uniform .03 mm change shaded
1000 A 500 A
2000
500 A
800
250 A
1500 Qrr [µC]
250 A
600 Irr [A] 400 200 0 0 100 200 di/dt [A/µs] 300 400 0 100 200 di/dt [A/µs] 300 400
1000
500
0
ta = Irr / (di/dt)
ANSALDO
DISSIPATION CHARACTERISTICS SQUARE WAVE 5000 4500 4000 Power Dissipation [W]
90° 120° 180° DC
DC
3500
60°
3000
30°
2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 Mean Forward Current [A]
Conditions
Tj [°C]
Value
Unit
BLOCKING
V RRM V RSM I
RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
tb = trr - ta
IFBiblioteka d i/d t tatb
Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr Vr
元器件交易网
°C/kW °C kN g
ORDERING INFORMATION : ARF676 S 48 standard specification
VRRM/100
元器件交易网
ARF676 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
FAST RECOVERY DIODE
ARF676
Repetitive voltage up to Mean forward current Surge current 4800 V 1515 A 18 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
MOUNTING
R th(j-h) T F
j
Thermal impedance Operating junction temperature Mounting force Mass
Junction to heatsink, double side cooled
18 -30 / 140 22.0 / 24.5 300
元器件交易网
ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 140
140 140 140
4800 4900 100
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
SINE WAVE 5000 4500 4000 Power Dissipation [W]
90° 120° 180°
DC
3500 3000 2500 2000 1500 1000 500 0 0 500
30°
60°
1000
1500
2000
2500
Mean Forward Current [A]
元器件交易网
ARF676 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
ANSALDO
FORWARD CHARACTERISTIC Tj = 140 °C
SURGE CHARACTERISTIC Tj = 140 °C
18 5000 4500 4000 Forward Current [A] 3500 3000 2500 2000 1500 1000 500 0 0.6 1.6 2.6 3.6 Forward Voltage [V] 4 2 0 1 10 n° cycles 100 ITSM [kA] 0.01 0.1 t[s] 1 10 100 16 14 12 10 8 6