NVBG040N120SC1 SiC MOSFET说明书

Features •Typ. R DS(on) = 40 m W •Ultra Low Gate Charge (Typ. Q G(tot) = 106 nC)•Low Effective Output Capacitance (Typ. C oss = 139 pF)•100% Avalanche Tested •AEC −Q101 Qualified and PPAP Capable
•This Device is Pb −Free and is RoHS Compliant Typical Applications •Automotive On Board Charger •Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (T J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit Drain −to −
Source Voltage V DSS 1200
V Gate −to −Source Voltage
V GS +25/−15V Recommended Operation Values of Gate − Source Voltage
T C < 175°C V GSop +20/−5V Continuous Drain Current (Note 1)
Steady State T C = 25°C I D 60A Power Dissipation (Note 1)
P
D 357W Continuous Drain Current (Note 1)
Steady State T C = 100°C I D 43A Power Dissipation (Note 1)
P D 178W Pulsed Drain Current (Note 2)
T A = 25°C I DM 240A Single Pulse Surge Drain Current Capa-bility T A = 25°C, t p = 10 m s,R G = 4.7 W I DSC 416A Operating Junction and Storage Temperature Range
T J , T stg −55 to +175°C Source Current (Body Diode)
I S 36A Single Pulse Drain −to −Source Avalanche Energy (I L = 34 A pk , L = 1 mH) (Note 3)
E AS 578mJ Maximum Lead Temperature for Soldering, 1/8″ from Case for 10 Seconds T L 300°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.The entire application environment impacts the thermal resistance values shown,they are not constants and are only valid for the particular conditions noted.2.Repetitive rating, limited by max junction temperature.3.E AS of 578 mJ is based on starting T J = 25°C; L = 1 mH, I AS = 34 A, V DD =120 V, V GS = 18 V.D2PAK −7L CASE 418BJ See detailed ordering and shipping information on page 6 of this data sheet.
ORDERING INFORMATION MARKING DIAGRAM
V (BR)DSS R DS(ON) MAX I D MAX 1200 V 56 m W @ 20 V 60 A N −CHANNEL MOSFET A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NVBG040120SC1 = Specific Device Code AYWWZZ
NVBG
040120SC1
0.42
40
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS V GS = 0 V, I D = 1 mA1200V Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/T J I D= 1 mA, refer to 25°C0.45V/°C
Zero Gate Voltage Drain Current I DSS V GS = 0 V
V DS = 1200 V T J= 25°C100m A T J= 175°C1mA
Gate−to−Source Leakage Current I GSS V GS= +25/−15 V, V DS= 0 V±1m A ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V GS(TH)V GS= V DS, I D= 10 mA 1.83 4.3V Recommended Gate Voltage V GOP−5+20V Drain−to−Source On Resistance R DS(on)V GS= 20 V, I D= 35 A, T J = 25°C4056m W
V GS= 20 V, I D= 35 A, T J = 175°C71100m W Forward Transconductance g FS V DS= 20 V, I D= 35 A20S CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C ISS V GS= 0 V, f = 1 MHz,
V DS= 800 V 1789pF
Output Capacitance C OSS139 Reverse Transfer Capacitance C RSS12.5
Total Gate Charge Q G(TOT)V GS = −5/20 V, V DS = 600 V,
I D = 47 A 106nC
Threshold Gate Charge Q G(TH)18
Gate−to−Source Charge Q GS34
Gate−to−Drain Charge Q GD26
Gate−Resistance R G f = 1 MHz2W SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t d(ON)V GS = −5/20 V, V DS = 800 V,
I D = 47 A, R G = 4.7 W,
Inductive Load 1730ns
Rise Time t r2036
Turn−Off Delay Time t d(OFF)3048
Fall Time t f918
Turn−On Switching Loss E ON366m J Turn−Off Switching Loss E OFF200
Total Switching Loss E TOT566
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
I SD V GS = −5 V, T J = 25°C36A
Pulsed Drain−Source Diode Forward Current
(Note 2)
I SDM V GS = −5 V, T J = 25°C240A Forward Diode Voltage V SD V GS = −5 V, I SD = 17.5 A, T J = 25°C 3.7V
24
124.8
8.4
RRM10.4
Charge time Ta12.4ns Discharge time Tb11.6ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4.Switching characteristics are independent of operating junction temperature
Figure 1. On −Region Characteristics
Figure 2. Normalized On −Resistance vs. Drain Current and Gate Voltage Figure 3. On −Resistance Variation with
Temperature
Figure 4. On −Resistance vs. Gate −to −Source Voltage T J , JUNCTION TEMPERATURE (°C)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current
V GS , GATE −TO −SOURCE VOLTAGE (V)V SD , BODY DIODE FORWARD VOLTAGE (V)
R D S (o n ), N O R M A L I Z E
D D R A I N −T O −S O U R C
E O N −R E S I S
T A N C E R D S (o n ), O N −R E S I S T A N C E (m W )I S , R E V E R S E D R A I N C U R R E N T (A )300110V DS , DRAIN −TO −SOURCE VOLTAGE (V)I D , DRAIN CURRENT (A)
2I D , D R A I N C U R 480V GS , GATE −TO −SOURCE VOLTAGE (V)
6100010200300R D S (o n ), N O R M A L I Z E S O U R C E O N −R E I D , D R A I N C U R R E N T (A )100
Figure 7. Gate −to −Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain −to −Source Voltage V DS , DRAIN −TO −SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs. Case Temperature t AV , TIME IN AVALANCHE (ms)T C , CASE TEMPERATURE (°C)
175
1257550Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
V DS , DRAIN −TO −SOURCE VOLTAGE (V)t, PULSE WIDTH (sec)
C A P A C I T A N C I A S , A V A L A N C H E C U R R E N T (A )I
D , D R A I N C U R R
E N T (A )I D , D R A I N C U R R E N T (A )P (P K ), P E A K T R A N S I E N T P O W E R (w )Q g , GATE CHARGE (nC)−50
V G S , G A T E −T O −S O U R C 20
5
15
1001502510
Figure 13. Junction −to −Ambient Transient Thermal Response Curve
t, RECTANGULAR PULSE DURATION (sec)
r (t ), N O R M A L I Z E D E F F S I E N T T H E R M A L R DEVICE ORDERING INFORMATION
Device
Package Shipping †NVBG040N120SC1D2PAK −7L 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
2263
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