F1206资料
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
RF CHARACTERISTICS ( WATTS OUTPUT )
8
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
PATENTED GOLD METALIZED 8Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total Device Junction to Case Thermal Maximum Junction Storage
Temperature
DC Drain Current
Drain to Gate Drain to Source Gate to Source 50Watts
3.5C
o 200-65to 1502A
30V
V
V
5050ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP
MAX
UNITS TEST CONDITIONS
SYMBOL PARAMETER
MIN TYP
MAX
UNITS
TEST CONDITIONS Gps
η
VSWR
Common Source Power Gai Drain Efficiency
Load Mismatch Toleranc
dB %Relative
10
60
0.420:1
Idq = Idq = Idq = 0.40.4A,A,A,12.5Vds =V,12.5Vds =V,12.5Vds =V, F =500MHz F =500MHz F =500MHz
Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss
Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren
Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc
40
117
1
0.80.77.540630
Mho Ohm Amp pF V V pF pF
mA uA 0.05Ids = A,Vgs = 0V 12.5Vds =V,Vgs = 0V Vds = 0 V,Vgs = 30V 0.1Ids =A,
Vgs = Vds
Vds = 10V,Vgs = 5V Vgs = 20V,Ids =8Vgs = 20V,Vds = 10V
12.5Vds =V, Vgs = 0V, F = 1 MHz A 12.5Vds =V, Vgs = 0V, F = 1 MHz 12.5Vds =V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@ URL:
REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE
"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance
t TM
C o C
o C/W
o F1206
polyfet rf devices
Dissipation Resistance Temperature Voltage Voltage Voltage 8/1/97
VDMOS TRANSISTOR
POUT VS PIN GRAPH
F1206
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@ URL:
CAPACITANCE VS VOLTAGE
IV CURVE ID AND GM VS VGS
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
REVISION 8/1/97。