THICK FILM AND THIN FILM MULTILAYER SUBSTRATE
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专利名称：THICK FILM AND THIN FILM MULTILADEKI 申请号：JP27779290 申请日：19901018 公开号：J P H 04 154 196A 公开日：19920527
摘要：PURPOSE:To make it possible to enhance the degree of evenness, produce multilayers, laminate thin film wiring layers without undergoing the effect of a high dielectric thick film, produce higher density and speed up lag time by laminating thin film wiring layers on a thick film wiring layer. CONSTITUTION:Between a plurality of thick film wiring layers 1 and thin film wiring layers 2 to be laminated, there exists a connection layer 3 made of thin film layers 35 which comprises more than two layers, at least an upper connection layer 31 and a lower connection layer 31. Connection via holes 33 and 34 are installed to the layer 31 and the layer 32 respectively where the hole 33 on the layer 31 and the hole 34 on the layer 32 are laid out so that they may be lapped. This construction makes it possible to connect the layers 1 with the layers 2 without any communication by means of the hole 33 and the hole 34 under such a partitioned state by the film 35 of the layer 3. As a result, no layers 1 are exposed in the layers 2 while the layers 2 are capable of speeding up lag time and creating higher density without undergoing any effect from the layers 1.
申请人：FUJITSU LTD
更多信息请下载全文后查看
专利名称：THICK FILM AND THIN FILM MULTILADEKI 申请号：JP27779290 申请日：19901018 公开号：J P H 04 154 196A 公开日：19920527
摘要：PURPOSE:To make it possible to enhance the degree of evenness, produce multilayers, laminate thin film wiring layers without undergoing the effect of a high dielectric thick film, produce higher density and speed up lag time by laminating thin film wiring layers on a thick film wiring layer. CONSTITUTION:Between a plurality of thick film wiring layers 1 and thin film wiring layers 2 to be laminated, there exists a connection layer 3 made of thin film layers 35 which comprises more than two layers, at least an upper connection layer 31 and a lower connection layer 31. Connection via holes 33 and 34 are installed to the layer 31 and the layer 32 respectively where the hole 33 on the layer 31 and the hole 34 on the layer 32 are laid out so that they may be lapped. This construction makes it possible to connect the layers 1 with the layers 2 without any communication by means of the hole 33 and the hole 34 under such a partitioned state by the film 35 of the layer 3. As a result, no layers 1 are exposed in the layers 2 while the layers 2 are capable of speeding up lag time and creating higher density without undergoing any effect from the layers 1.
申请人：FUJITSU LTD
更多信息请下载全文后查看