1ZC91中文资料
FLZ9V1C中文资料
FLZ2V2 - FLZ39V Zener DiodesMarch 2006FLZ2V2 - FLZ39VZener DiodesAbsolute Maximum Ratings T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of the diode may be impaired.Thermal Characteristics* Device mounted on FR-4 PCB with 3’’ × 4.5” X 0.06 with only signal traceElectrical Characteritics Tamb = 25°C unless otherwise specifiedPackage Marking and Ordering InformationSymbolParameterValueUnitsP D Power Dissipation500mW T STG Storage Temperature Range -65 to +175°C T J Maximum Junction Temperature 175°C I ZMMaximum Regulator CurrentP D /V ZmASymbolParameterValueUnitR θJAThermal Resistance, Junction to Ambient300°C/WSymbolParameter/ Test conditionMin.Typ.Max.UnitV FForward Voltage / I F =200mA----1.2VDevice MarkingDevicePackageReel SizeTape WidthQuantityColor Band Marking Per ToleranceRefer to Product table listSOD-807”8mm2,500SOD-80 Glass caseColor Band Denotes CathodeColor Band MarkingTolerance 1st Band 2nd Band A Blue Red B Blue Green C Blue Black D Blue GrayFLZ3V0B 3.02 3.12 3.2135204501351 FLZ3V3FLZ3V3A 3.17 3.27 3.3635204501141 FLZ3V3B 3.33 3.43 3.5235204501141 FLZ3V6FLZ3V6A 3.48 3.57 3.6648208501 2.81 FLZ3V6B 3.64 3.73 3.8148208501 2.81 FLZ3V9FLZ3V9A 3.78 3.88 3.9740208501 1.41 FLZ3V9B 3.93 4.03 4.1240208501 1.41 FLZ4V3FLZ4V3A 4.07 4.15 4.23322085010.471 FLZ4V3B 4.22 4.30 4.38322085010.471FLZ4V3C 4.35 4.44 4.52322085010.471 FLZ4V7FLZ4V7A 4.48 4.56 4.64212077010.191 FLZ4V7B 4.60 4.68 4.75212077010.191FLZ4V7C 4.73 4.81 4.89212077010.191 FLZ5V1FLZ5V1A 4.86 4.94 5.021********.19 1.5 FLZ5V1B 4.99 5.08 5.16172068510.19 1.5FLZ5V1C 5.13 5.23 5.33172068510.19 1.5 FLZ5V6FLZ5V6A 5.31 5.41 5.5010.52042510.75 2.5 FLZ5V6B 5.48 5.58 5.6810.52042510.75 2.5FLZ5V6C 5.66 5.76 5.8610.52042510.75 2.5 FLZ6V2FLZ6V2A 5.83 5.94 6.048.5202551 3.33 FLZ6V2B 6.01 6.12 6.228.5202551 3.33FLZ6V2C 6.18 6.28 6.388.5202551 3.33 FLZ6V8FLZ6V8A 6.33 6.45 6.57 6.6201230.5 1.1 3.5 FLZ6V8B 6.54 6.66 6.77 6.6201230.5 1.1 3.5FLZ6V8C 6.72 6.83 6.93 6.6201230.5 1.1 3.5 FLZ7V5FLZ7V5A 6.907.047.17 6.620950.50.3 4.0 FLZ7V5B7.137.267.39 6.620950.50.3 4.0FLZ7V5C7.357.497.62 6.620950.50.3 4.0 FLZ8V2FLZ8V2A7.587.737.88 6.620950.50.35 FLZ8V2B7.847.998.13 6.620950.50.35FLZ8V2C8.098.248.39 6.620950.50.35 FLZ9V1FLZ9V1A8.348.518.68 6.620950.50.36 FLZ9V1B8.638.808.97 6.620950.50.36FLZ9V1C8.919.099.27 6.620950.50.36FLZ12VB11.5311.7111.899.510950.50.1339FLZ12VC11.8312.0512.279.510950.50.1339 FLZ13V FLZ13VA12.2112.4512.6811.410950.50.13310 FLZ13VB12.6212.8713.1211.410950.50.13310FLZ13VC13.0713.3315.3811.410950.50.13310 FLZ15V FLZ15VA13.5213.7914.0513.310950.50.13311 FLZ15VB13.9914.2614.5213.310950.50.13311FLZ15VC14.4514.7214.9913.310950.50.13311 FLZ16V FLZ16VA14.9015.1915.4715.2101320.50.13312 FLZ16VB15.3615.6515.9315.2101320.50.13312FLZ16VC15.8316.1416.4515.2101320.50.13312 FLZ18V FLZ18VA16.3816.7017.0219.4101230.50.13313 FLZ18VB16.9617.2917.6119.4101230.50.13313FLZ18VC17.5617.9018.2419.4101230.50.13313 FLZ20V FLZ20VA18.1718.5218.8623.5101700.50.13315 FLZ20VB18.7819.1319.4823.5101700.50.13315FLZ20VC19.4219.8020.1823.5101700.50.13315FLZ20VD19.9320.3020.6723.5101700.50.13315 FLZ22V FLZ22VA20.2820.6621.0325.651700.50.13317 FLZ22VB20.8221.2121.5925.651700.50.13317FLZ22VC21.2921.6622.0225.651700.50.13317FLZ22VD21.7522.1522.5425.651700.50.13317 FLZ24V FLZ24VA22.3222.6923.0629.051700.50.13319 FLZ24VB22.8123.2423.6729.051700.50.13319FLZ24VC23.3523.7824.2129.051700.50.13319FLZ24VD23.8724.3124.7529.051700.50.13319 FLZ27V FLZ27VA24.3324.8925.453852100.50.133 21 FLZ27VB25.0425.6226.193852100.50.133 21FLZ27VC25.6926.2926.883852100.50.133 21FLZ27VD26.3626.9727.573852100.50.133 21 FLZ30V FLZ30VA27.0727.6928.314652100.50.133 23 FLZ30VB27.7728.4129.054652100.50.133 23FLZ30VC28.4429.0929.744652100.50.133 23FLZ30VD29.1029.7730.434652100.50.133 23FLZ36VD34.1934.8935.596352100.50.13327 FLZ39V FLZ39VA34.8635.5736.287252100.50.13330 FLZ39VB35.5336.2636.997252100.50.13330FLZ39VC36.1836.9237.667252100.50.13330FLZ39VD36.8237.5838.337252100.50.13330Note :1. Zener Voltage(V z)The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at at 30°C ± 1°C and 3/8” lead length.Dimensions in MillimetersFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR As used herein:2. A critical component is any component of a life support device Formative or In This datasheet contains the design specifications for This datasheet contains preliminary data, andThis datasheet contains final specifications. Fairchild This datasheet contains specifications on a product Across the board. Around the world.™DISCLAIMERPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationDesign product development. Specifications may change in any manner without notice.PreliminaryFirst Productionsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionSemiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Productionthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.PACMAN™POP™Power247™PowerEdge™SPM™Stealth™SuperFET™SuperSOT™-3The Power Franchise ®Programmable Active Droop™Rev. I18。
Y-C9_carrier_board_DataSheet_Chinese说明书
Y-C9产品手册产品手册更新历史电子元件和电路对静电放电很敏感,虽然本公司在设计电路板卡产品时会对板卡上的主要接口做防静电保护设计,但很难对所有元件及电路做到防静电安全防护。
因此在处理任何电路板组件时,建议遵守防静电安全保护措施。
防静电安全保护措施包括但不限于以下几点:➢运输、存储过程中应将板卡放在防静电袋中,直至安装部署时再拿出板卡。
➢在身体接触板卡之前应将身体内寄存的静电释放掉:佩戴放电接地腕带。
➢仅在静电放电安全区域内操作电路板卡。
➢避免在铺有地毯的区域搬移电路板。
➢通过板边接触来避免直接接触板卡上的电子元件。
目录1 产品介绍 (5)1.1 产品特性 (5)1.2 订货信息 (6)2 对外接口功能及位置 (7)2.1 功能连接器 (8)2.2 LED指示灯 (8)2.3 按键 (8)3 安装与使用 (9)3.1 安装效果图 (9)3.2 板卡使用方法 (10)3.3 Recovery模式 (10)4 板卡接口定义描述 (11)4.1 核心模块接口(J1) (11)4.2 USB Type C连接器(J2) (11)4.3 USB3.0连接器(J3、J4、J5) (11)4.4 miniPCIe拓展接口(J6、J8) (12)4.5 M.2扩展接口(J9) (13)4.6 RJ45 连接器(J10) (14)4.7 HDMI连接器(J11) (14)4.8 4Pin插针连接器(J12、J13) (14)4.9 Micro USB连接器(J14) (15)4.10 风扇接口(J15) (15)4.11上电控制(J17) (15)4.12 电源连接器(J18) (15)4.13 RTC电池座(J19) (15)1 产品介绍Y-C9是一款搭配NVIDIA® Jetson™AGX Xavier核心模块的小体积载板,适合紧凑型部署需求。
面向工业部署应用,主要接口进行了静电安全保护设计,采用了高可靠性的电源应用方案,输入电源具有过压与反极性保护功能,具有丰富的对外接口,全板器件均采用宽温型号。
DS-19A08-BNG DS-19A08-BN网络报警小主机用户手册 V1.1
2.1 主板接口描述 .......................................................................................................................... 10 2.2 设备接线 .................................................................................................................................. 11
网络报警小主机.用户手册
目录
第 1 章 网络报警小主机简介........................................................................................................9
1.1 功能简介 .................................................................................................................................... 9 1.2 功能特性 .................................................................................................................................... 9
CN410899中文资料
Dual & Single Diode Isolated Module 100 Amperes / Up to 1600 VoltsDescription:Powerex Dual Diode & Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK TM has been tested and recognized by the Underwriters Laboratories.Features:T Electrically Isolated HeatsinkingT DBC Alumina (Al2O3) InsulatorT Copper BaseplateT Low Thermal Impedancefor Improved Current CapabilityT UL Recognized (E78240)Benefits:T No Additional InsulationComponents RequiredT Easy InstallationT No Clamping ComponentsRequiredT Reduce Engineering TimeApplications:T Power SuppliesT Bridge CircuitsT AC & DC Motor DrivesT Battery SuppliesT Large IGBT Circuit Front EndsT Lighting ControlT Heat & Temperature ControlT WeldersDual & Single Diode Isolated Module100 Amperes / Up to 1600 VoltsAbsolute Maximum RatingsCharacteristics ConditionsSymbolUnits Repetitive Peak Reverse Blocking Voltage V RRM up to 1600 VNon-Repetitive Peak Reverse Blocking Voltage(t < 5 msec)V RSM V RRM + 100 VRMS Forward Current DC Conduction, T C=90°C I F(RMS) 157 AAverage Forward Current 180° Conduction, T C=100°C I F(AV) 100 APeak One Cycle Surge Current, Non-Repetitive 60 Hz, 100% V RRM reapplied, T J = 150°C60 Hz, No V RRM reapplied, T J = 150°C50 Hz, 100% V RRM reapplied, T J = 150°C50 Hz, No V RRM reapplied, T J = 150°C I FSMI FSMI FSMI FSM1,7802,1101,7002,020AAAAPeak Three Cycle Surge Current, Non-Repetitive 60 Hz, 100% V RRM reapplied, T J = 150°C50 Hz, 100% V RRM reapplied, T J = 150°C I FSMI FSM1,3101,250AAPeak Ten Cycle Surge Current, Non-Repetitive 60 Hz, 100% V RRM reapplied, T J = 150°C50 Hz, 100% V RRM reapplied, T J = 150°C I FSMI FSM940900AAI2t for Fusing for One Cycle 8.3 ms, 100% V RRM reapplied, T J = 150°C8.3 ms, No V RRM reapplied, T J = 150°C10 ms, 100% V RRM reapplied, T J = 150°C10 ms, No V RRM reapplied, T J = 150°C I2tI2tI2tI2t13,19018,65014,45020,430A2 secA2 secA2 secA2 secOperating Temperature T J -40to+150 °C Storage Temperature T stg -40to+150 °CMax. Mounting Torque, M6 Mounting Screw on Terminals 25 3in. – Lb.NmMax. Mounting Torque, Module to Heatsink 445 in. – Lb. NmModule Weight, Typical 110 g3.88OzV Isolation @ 25CCircuit To Base, All Terminals Shorted Together 50-60 Hz, 1 second Vrms3500 VDual & Single Diode Isolated Module100 Amperes / Up to 1600 VoltsElectrical Characteristics, T J=25°C unless otherwise specifiedCharacteristics SymbolTestConditionsMin.Max.UnitsRepetitive Peak Reverse Leakage Current I RRM Up to 1600V, T J=150°C10mAPeak On-State Voltage V FM TJ=25°C, I FM=315A, 180° Conduction 1.45VThreshold Voltage, Low-level Slope Resistance, Low-level V(FO)1r T1T J = 150°C, I = 16.7% x πI F(AV) to πI F(AV)0.791.78VmΩThreshold Voltage, High-level Slope Resistance, High-level V(FO)2r T2T J = 150°C, I = πI F(AV) to I FSM0.871.57VmΩV TM Coefficients, Full Range T J = 150°C, I = 15%I F(AV) to I FSMV TM = A+ B Ln I +C I + D Sqrt I A =B =C =D =7.72E-011.22E-021.57E-03-2.76E-05Thermal CharacteristicsCharacteristics Symbol Max.UnitsThermal Resistance, Junction to Case RΘJ-C Per Module, both conductingPer Junction, both conducting0.1750.35°C/W°C/WThermal Impedance Coefficients ZΘJ-C ZΘJ-C= K1 (1-exp(-t/τ1))+ K2 (1-exp(-t/τ2))+ K3 (1-exp(-t/τ3))+ K4 (1-exp(-t/τ4)) K1 = 9.82 E+1K2 = -1.11 E+2K3 = 1.32 E+1K4 = 2.72 E-1τ1 = 4.60 E-3τ2 = 4.65 E-3τ3 = 5.05 E-3τ4 = 0.1398Thermal Resistance, Case to Sink Lubricated RΘC-SPer Module 0.1 °C/WDual & Single Diode Isolated Module100 Amperes / Up to 1600 VoltsMaximum On-State Power Dissipation01020304050607080901001101201300102030405060708090100Average On-State Current - If(av) - AmperesM a x . P o w e r D i s s i p a t i o n P e r D i o d e - W a t t s(Sinusoidal Waveform)Maximum Allowable Case Temperature1001051101151201251301351401451500102030405060708090100Average On-State Current - If(av) - AmperesM a x . C a s e T e m p e r a t u r e - T c a s e -°C(Sinusoidal Waveform)Maximum On-State Power Dissipation020406080100120140160180020406080100120140160Average On-State Current - If(av) - Amperes M a x . P o w e r D i s s i p a t i o n P e r D i o d e - W a t t s(Rectangular Waveform)Maximum Allowable Case Temperature9095100105110115120125130135140145150020406080100120140160Average On-State Current - If(av) - AmperesM a x . C a s e T e m p e r a t u r e - T c a s e -°C(Rectangular Waveform)Maximum On-State Forward Voltage Drop0.511.522.53101001000Instantaneous On-State Current - Ifm - Amperes O n -S t a t e V o l t a g e - V f m - V o l t s( Tj = 150 °C )Maximum Transient Thermal Impedance0.000.050.100.150.200.250.300.350.400.0010.010.1110100Time - t - SecondsT h e r m a l I m p e d a n c e - R j c - °C /W(Junction to Case)。
cc1101
CC1101 CC1101Low-Cost Low-Power Sub-1GHz RF Transceiver (Enhanced CC1100 )Applications•Ultra low-power wireless applications operating in the 315/433/868/915 MHz ISM/SRD bands•Wireless alarm and security systems •Industrial monitoring and control •Wireless sensor networks •AMR – Automatic Meter Reading •Home and building automationProduct DescriptionKey FeaturesRF Performance•High sensitivity (–111 dBm at 1.2 kBaud, 868 MHz, 1% packet error rate)•Low current consumption (14.7 mA in RX,1.2 kBaud, 868 MHz)•Programmable output power up to +10 dBm for all supported frequencies •Excellent receiver selectivity and blocking performance•Programmable data rate from 1.2 to 500 kBaud•Frequency bands: 300-348 MHz, 387-464 MHz and 779-928 MHzAnalog Features•2-FSK, GFSK, and MSK supported as well as OOK and flexible ASK shaping •Suitable for frequency hopping systems due to a fast settling frequency synthesizer: 90us settling time• Automatic Frequency Compensation (AFC) can be used to align the frequencysynthesizer to the received center frequency•Integrated analog temperature sensor Digital Features•Flexible support for packet oriented systems: On-chip support for sync worddetection, address check, flexible packetlength, and automatic CRC handling •Efficient SPI interface: All registers can be programmed with one “burst” transfer •Digital RSSI output•Programmable channel filter bandwidth •Programmable Carrier Sense (CS) indicator •Programmable Preamble Quality Indicator (PQI) for improved protection against falsesync word detection in random noise •Support for automatic Clear Channel Assessment (CCA) before transmitting (forlisten-before-talk systems)•Support for per-package Link Quality Indication (LQI)•Optional automatic whitening and de-whitening of dataLow-Power Features•400 nA sleep mode current consumption •Fast startup time: 240us from sleep to RX or TX mode (measured on EM referencedesign [5] and [6])•Wake-on-radio functionality for automatic low-power RX polling•Separate 64-byte RX and TX data FIFOs (enables burst mode data transmission) General•Few external components: Completely on-chip frequency synthesizer, no externalfilters or RF switch needed•Green package: RoHS compliant and no antimony or bromine•Small size (QLP 4x4 mm package, 20 pins)•Suited for systems targeting compliance with EN 300 220 (Europe) and FCC CFRPart 15 (US).•Support for asynchronous and synchronous serial receive/transmit modefor backwards compatibility with existingradio communication protocolsAbbreviationsAbbreviations used in this data sheet are described below.ACP Adjacent Channel Power MSK Minimum Shift KeyingApplicableNot ADC Analog to Digital Converter N/AAFC Automatic Frequency Compensation NRZ Non Return to Zero (Coding)AGC Automatic Gain Control OOK On-Off KeyingAMR Automatic Meter Reading PA Power AmplifierASK Amplitude Shift Keying PCB Printed Circuit BoardBER Bit Error Rate PD Power DownBT Bandwidth-Time product PER Packet Error RateCCA Clear Channel Assessment PLL Phase Locked LoopCFR Code of Federal Regulations POR Power-On ResetCRC Cyclic Redundancy Check PQI Preamble Quality IndicatorPreamble Quality ThresholdSense PQTCS CarrierCW Continuous Wave (Unmodulated Carrier) PTAT Proportional To Absolute Temperature DC Direct Current QLP Quad Leadless PackageDVGA Digital Variable Gain Amplifier QPSK Quadrature Phase Shift KeyingResistor-Capacitor ESR Equivalent Series Resistance RCFCC Federal Communications Commission RF Radio FrequencyFEC Forward Error Correction RSSI Received Signal Strength Indicator FIFO First-In-First-Out RX Receive, Receive ModeFHSS Frequency Hopping Spread Spectrum SAW Surface Aqustic Wave2-FSK Binary Frequency Shift Keying SMD Surface Mount DeviceGFSK Gaussian shaped Frequency Shift Keying SNR Signal to Noise RatioIF Intermediate Frequency SPI Serial Peripheral InterfaceI/Q In-Phase/Quadrature SRD Short Range DevicesISM Industrial, Scientific, Medical TBD To Be DefinedLC Inductor-Capacitor T/R Transmit/ReceiveLNA Low Noise Amplifier TX Transmit, Transmit ModeOscillator UHF Ultra High frequency LO LocalLSB Least Significant Bit VCO Voltage Controlled OscillatorLQI Link Quality Indicator WOR Wake on Radio, Low power pollingOscillator MCU MicrocontrollerUnit XOSC CrystalBit XTAL Crystal MSB MostSignificantTable Of ContentsAPPLICATIONS (1)PRODUCT DESCRIPTION (1)KEY FEATURES (1)KEY FEATURES (2)RF PERFORMANCE (2)ANALOG FEATURES (2)DIGITAL FEATURES (2)LOW-POWER FEATURES (2)GENERAL (2)ABBREVIATIONS (3)TABLE OF CONTENTS (4)1ABSOLUTE MAXIMUM RATINGS (7)2OPERATING CONDITIONS (7)3GENERAL CHARACTERISTICS (7)4ELECTRICAL SPECIFICATIONS (8)4.1C URRENT C ONSUMPTION (8)4.2RF R ECEIVE S ECTION (10)4.3RF T RANSMIT S ECTION (12)4.4C RYSTAL O SCILLATOR (13)4.5L OW P OWER RC O SCILLATOR (14)4.6F REQUENCY S YNTHESIZER C HARACTERISTICS (14)4.7A NALOG T EMPERATURE S ENSOR (15)4.8DC C HARACTERISTICS (15)4.9P OWER-O N R ESET (15)5PIN CONFIGURATION (16)6CIRCUIT DESCRIPTION (17)7APPLICATION CIRCUIT (18)8CONFIGURATION OVERVIEW (21)9CONFIGURATION SOFTWARE (23)104-WIRE SERIAL CONFIGURATION AND DATA INTERFACE (23)10.1C HIP S TATUS B YTE (25)10.2R EGISTER A CCESS (25)10.3SPI R EAD (26)10.4C OMMAND S TROBES (26)10.5FIFO A CCESS (26)10.6PATABLE A CCESS (27)11MICROCONTROLLER INTERFACE AND PIN CONFIGURATION (27)11.1C ONFIGURATION I NTERFACE (27)11.2G ENERAL C ONTROL AND S TATUS P INS (27)11.3O PTIONAL R ADIO C ONTROL F EATURE (28)12DATA RATE PROGRAMMING (28)13RECEIVER CHANNEL FILTER BANDWIDTH (30)14DEMODULATOR, SYMBOL SYNCHRONIZER, AND DATA DECISION (30)14.1F REQUENCY O FFSET C OMPENSATION (30)14.2B IT S YNCHRONIZATION (30)14.3B YTE S YNCHRONIZATION (31)15PACKET HANDLING HARDWARE SUPPORT (31)15.1D ATA W HITENING (32)15.2P ACKET F ORMAT (32)15.3P ACKET F ILTERING IN R ECEIVE M ODE (34)15.4P ACKET H ANDLING IN T RANSMIT M ODE (34)15.5P ACKET H ANDLING IN R ECEIVE M ODE (35)15.6P ACKET H ANDLING IN F IRMWARE (35)16MODULATION FORMATS (36)16.1F REQUENCY S HIFT K EYING (36)16.2M INIMUM S HIFT K EYING (36)16.3A MPLITUDE M ODULATION (36)17RECEIVED SIGNAL QUALIFIERS AND LINK QUALITY INFORMATION (37)17.1S YNC W ORD Q UALIFIER (37)17.2P REAMBLE Q UALITY T HRESHOLD (PQT) (37)17.3RSSI (37)17.4C ARRIER S ENSE (CS) (39)17.5C LEAR C HANNEL A SSESSMENT (CCA) (40)17.6L INK Q UALITY I NDICATOR (LQI) (40)18FORWARD ERROR CORRECTION WITH INTERLEAVING (40)18.1F ORWARD E RROR C ORRECTION (FEC) (40)18.2I NTERLEAVING (41)19RADIO CONTROL (42)19.1P OWER-O N S TART-U P S EQUENCE (42)19.2C RYSTAL C ONTROL (43)19.3V OLTAGE R EGULATOR C ONTROL (44)19.4A CTIVE M ODES (44)19.5W AKE O N R ADIO (WOR) (44)19.6T IMING (45)19.7RX T ERMINATION T IMER (46)20DATA FIFO (46)21FREQUENCY PROGRAMMING (48)22VCO (48)22.1VCO AND PLL S ELF-C ALIBRATION (48)23VOLTAGE REGULATORS (49)24OUTPUT POWER PROGRAMMING (49)25SHAPING AND PA RAMPING (50)26SELECTIVITY (52)27CRYSTAL OSCILLATOR (53)27.1R EFERENCE S IGNAL (54)28EXTERNAL RF MATCH (54)29PCB LAYOUT RECOMMENDATIONS (54)30GENERAL PURPOSE / TEST OUTPUT CONTROL PINS (55)31ASYNCHRONOUS AND SYNCHRONOUS SERIAL OPERATION (57)31.1A SYNCHRONOUS O PERATION (57)31.2S YNCHRONOUS S ERIAL O PERATION (57)32SYSTEM CONSIDERATIONS AND GUIDELINES (57)32.1SRD R EGULATIONS (57)32.2F REQUENCY H OPPING AND M ULTI-C HANNEL S YSTEMS (58)32.3W IDEBAND M ODULATION NOT USING S PREAD S PECTRUM (58)32.4D ATA B URST T RANSMISSIONS (58)32.5C ONTINUOUS T RANSMISSIONS (59)32.6C RYSTAL D RIFT C OMPENSATION (59)32.7S PECTRUM E FFICIENT M ODULATION (59)32.8L OW C OST S YSTEMS (59)32.9B ATTERY O PERATED S YSTEMS (59)32.10I NCREASING O UTPUT P OWER (59)33CONFIGURATION REGISTERS (60)33.1C ONFIGURATION R EGISTER D ETAILS –R EGISTERS WITH PRESERVED VALUES IN SLEEP STATE (64)33.2C ONFIGURATION R EGISTER D ETAILS –R EGISTERS THAT L OOSE P ROGRAMMING IN SLEEP S TATE (84)33.3S TATUS R EGISTER D ETAILS (85)34PACKAGE DESCRIPTION (QLP 20) (88)34.1R ECOMMENDED PCB L AYOUT FOR P ACKAGE (QLP20) (89)34.2P ACKAGE T HERMAL P ROPERTIES (89)34.3S OLDERING I NFORMATION (89)34.4T RAY S PECIFICATION (89)34.5C ARRIER T APE AND R EEL S PECIFICATION (90)35ORDERING INFORMATION (90)36REFERENCES (91)37GENERAL INFORMATION (92)37.1D OCUMENT H ISTORY (92)37.2P RODUCT S TATUS D EFINITIONS (92)38ADDRESS INFORMATION (93)39TI WORLDWIDE TECHNICAL SUPPORT (93)1 Absolute Maximum RatingsUnder no circumstances must the absolute maximum ratings given in Table 1 be violated. Stressexceeding one or more of the limiting values may cause permanent damage to the device.Caution! ESD sensitive device. Precaution should be used when handling the device in order to prevent permanent damage.ParameterMin Max Units ConditionSupply voltage–0.3 3.9 VAll supply pins must have the same voltageVoltage on any digital pin–0.3VDD + 0.3 max 3.9VVoltage on the pins RF_P, RF_N, and DCOUPL –0.3 2.0 V Voltage ramp-up rate 120 kV/µs Input RF level+10 dBm Storage temperature range –50 150 °CSolder reflow temperature 260 °C According to IPC/JEDEC J-STD-020C ESD 750 V According to JEDEC STD 22, method A114,Human Body Model (HBM)ESD400VAccording to JEDEC STD 22, C101C, Charged Device Model (CDM)Table 1: Absolute Maximum Ratings2 Operating ConditionsThe operating conditions for CC1101 are listed Table 2 in below.ParameterMin Max Unit Condition Operating temperature -40 85 °COperating supply voltage1.83.6VAll supply pins must have the same voltageTable 2: Operating Conditions3 General CharacteristicsParameter Min Typ Max Unit Condition/Note Frequency range300348MHz387 464 MHz 779 928 MHz Data rate1.2 1.2 26500 250 500kBaudkBaud kBaud2-FSKGFSK, OOK, and ASK(Shaped) MSK (also known as differential offsetQPSK)Optional Manchester encoding (the data rate in kbps will be half the baud rate)Table 3: General Characteristics4 Electrical Specifications4.1 Current ConsumptionTc = 25°C, VDD = 3.0V if nothing else stated. All measurement results are obtained using the CC1101EM reference designs ( [5] and [6]). Reduced current settings (MDMCFG2.DEM_DCFILT_OFF=1) gives a slightly lower current consumption at the cost of a reduction in sensitivity. Seefor additional details on current consumption and sensitivity. ParameterMin Typ Max Unit Condition 0.2 1 µA Voltage regulator to digital part off, register values retained (SLEEP state). All GDO pins programmed to 0x2F (HW to 0) 0.5 µA Voltage regulator to digital part off, register values retained, low-power RC oscillator running (SLEEP state with WOR enabled 100 µA Voltage regulator to digital part off, register values retained, XOSC running (SLEEP state with MCSM0.OSC_FORCE_ON set) Current consumption in power down modes165 µAVoltage regulator to digital part on, all other modules in power down (XOFF state)9.8 µAAutomatic RX polling once each second, using low-power RC oscillator, with 460 kHz filter bandwidth and 250 kBaud data rate,PLL calibration every 4thwakeup. Average current with signal in channel below carrier sense level (MCSM2.RX_TIME_RSSI=1). 34.2 µA Same as above, but with signal in channel above carrier sense level, 1.95 ms RX timeout, and no preamble/sync word found. 1.5 µAAutomatic RX polling every 15thsecond, using low-power RC oscillator, with 460kHz filter bandwidth and 250 kBaud data rate,PLL calibration every 4thwakeup. Average current with signal in channel below carrier sense level (MCSM2.RX_TIME_RSSI=1). 39.3 µA Same as above, but with signal in channel above carrier sense level, 29.3 ms RX timeout, and no preamble/sync word found.1.7 mA Only voltage regulator to digital part and crystal oscillator running(IDLE state) Current consumption8.4mA Only the frequency synthesizer is running (FSTXON state). Thiscurrents consumption is also representative for the otherintermediate states when going from IDLE to RX or TX, including the calibration state. 15.4 mA Receive mode, 1.2 kBaud, reduced current, input at sensitivitylimit 14.4 mA Receive mode, 1.2 kBaud, reduced current, input well abovesensitivity limit 15.2 mA Receive mode, 38.4 kBaud, reduced current, input at sensitivitylimit 14.3 mA Receive mode,38.4 kBaud, reduced current, input well abovesensitivity limit 16.5 mA Receive mode, 250 kBaud, reduced current, input at sensitivitylimit 15.1 mA Receive mode, 250 kBaud, reduced current, input well abovesensitivity limit 27.4 mA Transmit mode, +10 dBm output power 15.0 mA Transmit mode, 0 dBm output power Current consumption, 315MHz12.3mA Transmit mode, –6 dBm output powerTable 4: Electrical SpecificationsParameterMin Typ Max Unit Condition16.0 mA Receive mode, 1.2 kBaud, reduced current, input at sensitivitylimit 15.0 mA Receive mode, 1.2 kBaud, reduced current, input well abovesensitivity limit 15.7 mA Receive mode, 38.4 kBaud , reduced current, input at sensitivitylimit 15.0 mA Receive mode, 38.4 kBaud , reduced current, input well abovesensitivity limit 17.1 mA Receive mode, 250 kBaud, reduced current, input at sensitivitylimit 15.7 mA Receive mode, 250 kBaud, reduced current, input well abovesensitivity limit 29.2 mA Transmit mode, +10 dBm output power 16.0 mA Transmit mode, 0 dBm output power Current consumption, 433MHz13.1 mA Transmit mode, –6 dBm output power15.7 mA Receive mode, 1.2 kBaud , reduced current, input at sensitivitylimit 14.7 mA Receive mode, 1.2 kBaud , reduced current, input well abovesensitivity limit 15.6 mA Receive mode, 38.4 kBaud , reduced current, input at sensitivitylimit 14.6 mA Receive mode, 38.4 kBaud , reduced current, input well abovesensitivity limit 16.9 mA Receive mode, 250 kBaud , reduced current, input at sensitivitylimit 15.6 mA Receive mode, 250 kBaud , reduced current, input well abovesensitivity limit 32.3 mA Transmit mode, +10 dBm output power 16.8 mA Transmit mode, 0 dBm output power Current consumption, 868/915MHz13.1mA Transmit mode, –6 dBm output power4.2 RFReceiveSectionTc = 25°C, VDD = 3.0V if nothing else stated. All measurement results are obtained using the CC1101EM reference designs ( [5] and [6]).Parameter Min Typ Max Unit Condition/NoteDigital channel filter bandwidth 58 812 kHz User programmable. The bandwidth limits are proportional tocrystal frequency (given values assume a 26.0 MHz crystal).315 MHz, 1.2 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(2-FSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth)Receiver sensitivity-111 dBm Sensitivity can be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 17.2 mA to 15.4 mA atsensitivity limit. The sensitivity is typically reduced to -109 dBm 315 MHz, 500 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0 (MDMCFG2.DEM_DCFILT_OFF=1 cannot be used for data rates > 250 kBaud)(MSK, 1% packet error rate, 20 bytes packet length, 812 kHz digital channel filter bandwidth)-88 dBm433 MHz, 1.2 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(GFSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidthReceiver sensitivity -112 dBm Sensitivity can be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 18.0 mA to 16.0 mA atsensitivity limit. The sensitivity is typically reduced to -110 dBm 433 MHz, 38.4 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth)Receiver sensitivity –104 dBm433 MHz, 250 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(MSK, 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 540 kHz digital channel filter bandwidth)Receiver sensitivity -95 dBm868 MHz, 1.2 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(2-FSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth)Receiver sensitivity –111 dBm Sensitivity can be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 18.0 mA to 15.7 mA atsensitivity limit. The sensitivity is typically reduced to -109 dBm Saturation–14dBmFIFOTHR.CLOSE_IN_RX=0Adjacent channel rejection 37 dB Desired channel 3 dB above the sensitivity limit. 100 kHzchannel spacingAlternate channel rejection 37 dB Desired channel 3 dB above the sensitivity limit. 100 kHzchannel spacingSee Figure 24 for plot of selectivity versus frequency offsetImage channel rejection,868MHz 31 dB IF frequency 152 kHzDesired channel 3 dB above the sensitivity limit.868 MHz, 38.4 kBaud data rate, sensitivity optimized(GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth) Receiver sensitivity –103 dBmSaturation–16dBmAdjacent channel rejection 20 dB Desired channel 3 dB above the sensitivity limit. 200 kHzchannel spacingAlternate channel rejection 30 dB Desired channel 3 dB above the sensitivity limit. 200 kHzchannel spacingSee Figure 25 for plot of selectivity versus frequency offsetImage channel rejection,868MHz 23 dB IF frequency 152 kHzDesired channel 3 dB above the sensitivity limit.Parameter Min Typ Max Unit Condition/Note868 MHz, 250 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(MSK, 1% packet error rate, 20 bytes packet length, 540 kHz digital channel filter bandwidth)Receiversensitivity –94 dBmSensitivitycan be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 19.2 mA to 16.9 mA atsensitivity limit. The sensitivity is typically reduced to -91 dBm Saturation –17 dBmFIFOTHR.CLOSE_IN_RX=0Adjacent channel rejection 25 dB Desired channel 3 dB above the sensitivity limit. 750 kHzchannel spacingAlternate channel rejection 40 dB Desired channel 3 dB above the sensitivity limit. 750 kHzchannel spacingSee Figure 26 for plot of selectivity versus frequency offsetImage channel rejection, 868MHz 17 dB IF frequency 304 kHzDesired channel 3 dB above the sensitivity limit.915 MHz, 1.2 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(2-FSK, 5.2kHz deviation, 1% packet error rate, 20 bytes packet length, 58 kHz digital channel filter bandwidth)Receiversensitivity –111 dBmSensitivitycan be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 18.0 mA to 15.7 mA atsensitivity limit. The sensitivity is typically reduced to -109dBm915 MHz, 38.4 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(2-FSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth)Receiversensitivity –103 dBm915 MHz, 250 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0(MSK, 1% packet error rate, 20 bytes packet length, 540 kHz digital channel filter bandwidth)Receiversensitivity –94 dBmSensitivitycan be traded for current consumption by settingMDMCFG2.DEM_DCFILT_OFF=1. The typical currentconsumption is then reduced from 19.2 mA to 16.9 mA atsensitivity limit. The sensitivity is typically reduced to -91 dBm 915 MHz, 500 kBaud data rate, sensitivity optimized,MDMCFG2.DEM_DCFILT_OFF=0 (MDMCFG2.DEM_DCFILT_OFF=1 cannot be used for data rates > 250 kBaud)(MSK, 1% packet error rate, 20 bytes packet length, 812 kHz digital channel filter bandwidth)Receiversensitivity –87 dBmBlockingBlocking at ±2 MHz offset, 1.2 kBaud, 868 MHz -50 dBmDesiredchannel3dB above the sensitivity limit.Blocking at ±2 MHz offset,500 kBaud, 868 MHz-50 dBm Desired channel 3dB above the sensitivity limitBlocking at ±10 MHz offset, 1.2 kBaud, 868 MHz -39 dBmDesiredchannel3dBabove the sensitivity limit.Blocking at ±10 MHz offset, 500 kBaud, 868 MHz -40 dBmDesiredchannel3dBabove the sensitivity limit.Table 5: RF Receive Section4.3 RF Transmit SectionTc = 25°C, VDD = 3.0V, +10dBm if nothing else stated. All measurement results are obtained using the CC1101EM reference designs( [5] and [6]).Parameter Min Typ Max Unit Condition/NoteDifferential loadimpedance315 MHz 433 MHz 868/915 MHz 122 + j31116 + j4186.5 + j43ΩDifferential impedance as seen from the RF-port (RF_P andRF_N) towards the antenna. Follow the CC1101EM referencedesign ( [5] and [6]) available from theTI website.Output power, highest setting +10 dBm Output power is programmable, and full range is available in allfrequency bands(Output power may be restricted by regulatory limits. See alsoApplication Note AN039 [3].Delivered to a 50Ω single-ended load via CC1101EM referencedesign ( [5] and [6])RF matching network.Output power, lowest setting -30 dBm Output power is programmable, and full range is available in allfrequency bands.Delivered to a 50Ω single-ended load via CC1101EM referencedesign( [5] and [6]) RF matching network.Harmonics, radiated2nd Harm, 433 MHz 3rd Harm, 433 MHz 2nd Harm, 868 MHz 3rd Harm, 868 MHz -49-40-39-64dBmMeasured on CC1101EM reference designs( [5] and [6])with CW,10dBm output powerThe antennas used during the radiated measurements (SMAFF-433 from R.W.Badland and Nearson S331 868/915) play a part inattenuating the harmonicsHarmonics, conducted315 MHz 433 MHz 868 MHz 915 MHz < -35< -53< -43< -45< -39< -33dBmMeasured with 10 dBm CW, TX frequency at 315.00 MHz,433.00 MHz, 868.00 MHz, or 915.00 MHzFrequencies below 960 MHzFrequencies above 960 MHzFrequencies below 1 GHzFrequencies above 1 GHzParameter Min Typ Max Unit Condition/Note GeneralSpurious emissions -68-66 –57–47dBmdBm25 MHz – 1 GHz(Maximum figure is the ETSI EN 300 220 limit)Above 1 GHz(Maximum figure is the ETSI EN 300 220 limit)Typical radiated spurious emission is -49 dBmeasured at the VCO frequency.RX latency 9 bit Serial operation. Time from start of reception untildata is available on the receiver data output pin isequal to 9 bit.Parameter Min Typ Max Unit Condition/Note Spuriousemissions,conductedHarmonics notincluded315 MHz433 MHz 868 MHz915 MHz < -58< -53< -50< -54< -56< -50< -51< -53< -51< -51dBmMeasured with 10 dBm CW, TX frequency at 315.00 MHz,433.00 MHz, 868.00 MHz or 915.00 MHzFrequencies below 960 MHzFrequencies above 960 MHzFrequencies below 1 GHzFrequencies above 1 GHzFrequencies within 47-74, 87.5-118, 174-230, 470-862 MHzFrequencies below 1 GHzFrequencies above 1 GHzFrequencies within 47-74, 87.5-118, 174-230, 470-862 MHz.All radiated spurious emissions are within the limits of ETSI. Thepeak conducted spurious emission is -53 dBm at 699 MHz, whichis in a frequency band limited to -54 dBm by EN 300 220. Analternative filter that can be used to reduce the emission at 699MHz below -54 dBm, for conducted measurements, is shown inFigure 4.Frequencies below 960 MHzFrequencies above 960 MHzGeneralTX latency 8 bit Serial operation. Time from sampling the data on the transmitterdata input pin until it is observed on the RF output ports.Table 6: RF Transmit Section4.4 CrystalOscillatorTc = 25°C @ VDD = 3.0 V if nothing else is stated.Parameter Min Typ Max Unit Condition/NoteCrystal frequency 26 26 27 MHzTolerance ±40 ppm This is the total tolerance including a) initial tolerance, b) crystalloading, c) aging, and d) temperature dependence.The acceptable crystal tolerance depends on RF frequency andchannel spacing / bandwidth.ESR100ΩStart-up time 150 µs Measured on the CC1101EM reference designs ( [5] and [6])using crystal AT-41CD2 from NDK.This parameter is to a large degree crystal dependent.Table 7: Crystal Oscillator Parameters4.5 Low Power RC OscillatorTc = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using the CC1101EM reference designs ( [5] and [6]).Parameter Min Typ Max Unit Condition/NoteCalibrated frequency 34.7 34.7 36 kHz Calibrated RC Oscillator frequency is XTALfrequency divided by 750Frequency accuracy aftercalibration±1 %Temperature coefficient +0.5 % / °C Frequency drift when temperature changes aftercalibrationSupply voltage coefficient +3 % / V Frequency drift when supply voltage changes aftercalibrationInitial calibration time 2 ms When the RC Oscillator is enabled, calibration iscontinuously done in the background as long asthe crystal oscillator is running.Table 8: RC Oscillator Parameters4.6 Frequency Synthesizer CharacteristicsTc = 25°C @ VDD = 3.0 V if nothing else is stated. All measurement results are obtained using the CC1101EM reference designs ( [5] and [6]). Min figures are given using a 27 MHz crystal. Typ and max are given using a 26 MHz crystal.Parameter Min Typ Max Unit Condition/NoteProgrammed frequency resolution 397 F XOSC/216412 Hz 26-27 MHz crystal.The resolution (in Hz) is equal for all frequencybands.Synthesizer frequency tolerance ±40 ppm Given by crystal used. Required accuracy(including temperature and aging) depends onfrequency band and channel bandwidth /spacing.RF carrier phase noise –92 dBc/Hz @ 50 kHz offset from carrierRF carrier phase noise –92 dBc/Hz @ 100 kHz offset from carrierRF carrier phase noise –92 dBc/Hz @ 200 kHz offset from carrierRF carrier phase noise –98 dBc/Hz @ 500 kHz offset from carrierRF carrier phase noise –107 dBc/Hz @ 1 MHz offset from carrierRF carrier phase noise –113 dBc/Hz @ 2 MHz offset from carrierRF carrier phase noise –119 dBc/Hz @ 5 MHz offset from carrierRF carrier phase noise –129 dBc/Hz @ 10 MHz offset from carrierPLL turn-on / hop time 85.1 88.4 88.4 µs Time from leaving the IDLE state until arriving inthe RX, FSTXON or TX state, when notperforming calibration.Crystal oscillator running.PLL RX/TX settling time 9.3 9.6 9.6 µs Settling time for the 1·IF frequency step from RXto TXPLL TX/RX settling time 20.7 21.5 21.5 µs Settling time for the 1·IF frequency step from TXto RXPLL calibration time 694 721 721 µs Calibration can be initiated manually orautomatically before entering or after leavingRX/TX.Table 9: Frequency Synthesizer Parameters。
乱码大全
邮件乱码知多少巧巧电脑网络2007-10-03 CPCW 赵伯青收藏此文大中小分享到QQ空间人人网开心网豆瓣新浪微博腾讯微博更多0对于常上网的朋友来说,收发电子邮件是最平常不过事情了,时间久了,相信你也曾收到过一些奇奇怪怪的字符,不知道是什么意思,令人烦恼不已。
特别是一些新网民,更是不知所措,或是弃之不理,或是当作垃圾邮件干脆删除。
对于常上网的朋友来说,收发电子邮件是最平常不过事情了,时间久了,相信你也曾收到过一些奇奇怪怪的字符,不知道是什么意思,令人烦恼不已。
特别是一些新网民,更是不知所措,或是弃之不理,或是当作垃圾邮件干脆删除,错过了一些重要的信息。
所以我们应当学会怎样正确处理这些乱码邮件。
为了能够正确处理这些乱码邮件,必须了解乱码产生的原因。
出现乱码的原因很多,最主要有二方面原因。
传输机制不同由于INTERNET的某些邮件服务器不支持8位(非ASCII格式)传输造成的。
具体来说,在直接发送中文双字节或二进制等非ASCII码格式(如中文双字节、图片文件.JPG、可执行文件.EXE、压缩文件.ZIP等二进制文件)时,由于主机无法处理,便把信件中的每一字符的第八位都截去,造成邮件失真或损坏,接收到的邮件便是一堆乱码。
此种乱码不可恢复,只能重发。
邮件编码不同邮于各种电子邮件软件的默认配置不同,收件和发件人自己的选项也各不相同,所以在收编码的信件后,系统不能自动识别编码方法,系统不能自动解码,这样当你查看信件的内容时,就会出现所谓的乱码,使收件人无法阅读该文件。
解决方法:传输机制不同的解决方法。
在发送8位格式的文体文件时,必须事先进行编码,将文件转换成7位ASCII码或更少位数的邮件之后,再发送出去,收件人在收到邮件后,利用专用的解码软件如WINZIP7.0、XFERPRO2.0等进行解码,这样,便可阅读了。
常见的编码方式有:UUENCODE编码这是很早以前在UNIX上就有的编码程序,主要用都集中在UNIX环境的使用者中,目前使用者已很少,其主要特征是:编码以BEGIN开头,以END结尾。
1V5KE18CA资料
5KE6V8(C)A - 1V5KE440(C)AV 8(C)A - 1 V5KE440(C)AV 8(C)A - 1 V5KE440(C)ADISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In Design First ProductionFull ProductionNot In ProductionMICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POPPower247 PowerTrench QFET QSQT Optoelectronics Quiet SeriesFAST FASTr FRFETGlobalOptoisolator GTO HiSeC I 2CISOPLANAR LittleFET MicroFET MicroPakRev. H5âACExBottomless CoolFETCROSSVOLT DenseTrench DOMEEcoSPARK E 2CMOS TM EnSigna TM FACTFACT Quiet SeriesSILENT SWITCHER SMART START SPM STAR*POWER StealthSuperSOT -3SuperSOT -6SuperSOT -8SyncFET TinyLogic TruTranslationâââSTAR*POWER is used under licenseUHC UltraFET VCX â。
乱码大全
邮件乱码知多少巧巧电脑网络2007-10-03 CPCW 赵伯青收藏此文大中小分享到QQ空间人人网开心网豆瓣新浪微博腾讯微博更多0对于常上网的朋友来说,收发电子邮件是最平常不过事情了,时间久了,相信你也曾收到过一些奇奇怪怪的字符,不知道是什么意思,令人烦恼不已。
特别是一些新网民,更是不知所措,或是弃之不理,或是当作垃圾邮件干脆删除。
对于常上网的朋友来说,收发电子邮件是最平常不过事情了,时间久了,相信你也曾收到过一些奇奇怪怪的字符,不知道是什么意思,令人烦恼不已。
特别是一些新网民,更是不知所措,或是弃之不理,或是当作垃圾邮件干脆删除,错过了一些重要的信息。
所以我们应当学会怎样正确处理这些乱码邮件。
为了能够正确处理这些乱码邮件,必须了解乱码产生的原因。
出现乱码的原因很多,最主要有二方面原因。
传输机制不同由于INTERNET的某些邮件服务器不支持8位(非ASCII格式)传输造成的。
具体来说,在直接发送中文双字节或二进制等非ASCII码格式(如中文双字节、图片文件.JPG、可执行文件.EXE、压缩文件.ZIP等二进制文件)时,由于主机无法处理,便把信件中的每一字符的第八位都截去,造成邮件失真或损坏,接收到的邮件便是一堆乱码。
此种乱码不可恢复,只能重发。
邮件编码不同邮于各种电子邮件软件的默认配置不同,收件和发件人自己的选项也各不相同,所以在收编码的信件后,系统不能自动识别编码方法,系统不能自动解码,这样当你查看信件的内容时,就会出现所谓的乱码,使收件人无法阅读该文件。
解决方法:传输机制不同的解决方法。
在发送8位格式的文体文件时,必须事先进行编码,将文件转换成7位ASCII码或更少位数的邮件之后,再发送出去,收件人在收到邮件后,利用专用的解码软件如WINZIP7.0、XFERPRO2.0等进行解码,这样,便可阅读了。
常见的编码方式有:UUENCODE编码这是很早以前在UNIX上就有的编码程序,主要用都集中在UNIX环境的使用者中,目前使用者已很少,其主要特征是:编码以BEGIN开头,以END结尾。
CIF文件详解
CIF文件详解(2010-06-26 00:03:55)转载分类:晶体解析标签:杂谈data_NJU_audit_creation_method SHELXL-97 产生CIF的程序名称_chemical_name_systematic 化合物的系统命名;?;_chemical_name_common ? 化合物的俗名_chemical_melting_point ? 化合物的熔点_chemical_formula_moiety'C15 H13 N3 O' 化合物的化学式_chemical_formula_sum'C15 H13 N3 O'_chemical_formula_weight 251.28 化合物的化学式量loop__atom_type_symbol 构成化合物的原子散射因子来源 _atom_type_description_atom_type_scat_dispersion_real_atom_type_scat_dispersion_imag_atom_type_scat_source'C' 'C' 0.0033 0.0000'International Tables Vol C Tables 4.2.6.8 and 6.1.1.4''H' 'H' 0.0000 0.0000'International Tables Vol C Tables 4.2.6.8 and 6.1.1.4''N' 'N' 0.0061 0.0000'International Tables Vol C Tables 4.2.6.8 and 6.1.1.4''O' 'O' 0.0106 0.0000'International Tables Vol C Tables 4.2.6.8 and 6.1.1.4'_symmetry_cell_setting 'Triclinic' 晶系名称_symmetry_space_group_name_H-M 'Pc ' 空间群名称loop__symmetry_equiv_pos_as_xyz'x, y, z''x, -y, z+1/2' 晶胞中等效坐标_cell_length_a 12.608(8) 晶胞参数_cell_length_b 11.023(7)_cell_length_c 10.044(7)_cell_angle_alpha 90.00_cell_angle_beta 105.94(3)_cell_angle_gamma 90.00_cell_volume 1342.2(15)_cell_formula_units_Z 4_cell_measurement_temperature 291(2) 测量晶胞时的温度_cell_measurement_reflns_used 940 用于确定晶胞的衍射点数_cell_measurement_theta_min 2.50 用于确定晶胞的衍射点的最小θ值_cell_measurement_theta_max 20.48 用于确定晶胞的衍射点的最大θ值_exptl_crystal_description block 被测单晶的外观形状_exptl_crystal_colour colourless 被测单晶的外观颜色_exptl_crystal_size_max 0.30 被测单晶的外观尺寸_exptl_crystal_size_mid 0.26_exptl_crystal_size_min 0.24_exptl_crystal_density_meas ? 被测单晶的测量密度_exptl_crystal_density_diffrn 1.244 被测单晶的计算密度_exptl_crystal_density_method 'not measured' 测量单晶密度方法_exptl_crystal_F_000 528 单胞中电子数_exptl_absorpt_coefficient_mu 0.081 单胞的线性吸收系数_exptl_absorpt_correction_type 'multi-scan' 吸收校正方法)_exptl_absorpt_correction_T_min 0.98 最小透过率_exptl_absorpt_correction_T_max 0.98 最大透过率_exptl_absorpt_process_details 'SADABS; Bruker, 2000' 吸收校正所用方法及其文献_exptl_special_details;? (实验细节描述);_diffrn_ambient_temperature 291(2) 衍射实验时温度_diffrn_radiation_wavelength 0.71073 衍射线波长λ_diffrn_radiation_type 'MoK\a' 衍射光源_diffrn_radiation_source 'sealed tube' X-光管类型_diffrn_radiation_monochromator 'graphite' 单色器类型_diffrn_measurement_device_type 'Bruker Smart Apex CCD area detector' 衍射仪型号_diffrn_measurement_method 'phi and omega scans' 收集衍射数据的方式_diffrn_detector_area_resol_mean ?_diffrn_standards_number ? 设置标准衍射点数_diffrn_standards_interval_count ? 标准衍射测量衍射点间隔_diffrn_standards_interval_time ? 标准衍射测量时间间隔_diffrn_standards_decay_% ? 测量过程中是否有衰减_diffrn_reflns_number 11645 总衍射点数_diffrn_reflns_av_R_equivalents 0.0437 等效点平均标准误差_diffrn_reflns_av_sigmaI/netI 0.0321 平均背景强度与平均衍射强度之比_diffrn_reflns_limit_h_min -16 衍射指标范围_diffrn_reflns_limit_h_max 16_diffrn_reflns_limit_k_min -13_diffrn_reflns_limit_k_max 14_diffrn_reflns_limit_l_min -13_diffrn_reflns_limit_l_max 12_diffrn_reflns_theta_min 1.68 结构精修时最小θ角_diffrn_reflns_theta_max 27.74 结构精修时最大θ角_reflns_number_total 3110 独立衍射点数_reflns_number_gt 2784 独立衍射点中强度大于2σ的衍射点数_reflns_threshold_expression >2sigma(I)_computing_data_collection 'SMART (Bruker, 2000)' 收集衍射数据所用程序_computing_cell_refinement 'SMART' 精修晶胞参数所用程序_computing_data_reduction 'SAINT (Bruker, 2000)' 衍射数据还原所用程序_computing_structure_solution 'SHELXTL (Bruker, 2000)' 解析粗结构所用程序_computing_structure_refinement 'SHELXTL' 结构精修所用程序_computing_molecular_graphics 'SHELXTL' 发表论文作图所用程序_computing_publication_material 'SHELXTL' 发表论文制作数据表格所用程序_refine_special_details 结构精修过程中一些细节的说明;Refinement of F^2^ against ALL reflections. The weighted R-factor wR andgoodness of fit S are based on F^2^, conventional R-factors R are basedon F, with F set to zero for negative F^2^. The threshold expression ofF^2^ > 2sigma(F^2^) is used only for calculating R-factors(gt) etc. and isnot relevant to the choice of reflections for refinement. R-factors basedon F^2^ are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.;_refine_ls_structure_factor_coef Fsqd 基于F2的结构精修_refine_ls_matrix_type full 精修矩阵类型_refine_ls_weighting_scheme calc 权重方案_refine_ls_weighting_details 权重方案表达式'calc w=1/[\s^2^(Fo^2^)+(0.05P)^2^+0.88P] where P=(Fo^2^+2Fc^2^)/3'_atom_sites_solution_primary direct 解析粗结构的方法_atom_sites_solution_secondary difmap 进一步解析结构的方法_atom_sites_solution_hydrogens geom 获得氢原子的方法_refine_ls_hydrogen_treatment mixed 结构精修中氢原子的处理方法_refine_ls_extinction_method none 消光校正方案_refine_ls_extinction_coef ? 消光校正系数_refine_ls_abs_structure_details 处理绝对构型方法和参考文献'Flack H D (1983), Acta Cryst. A39, 876-881'_refine_ls_abs_structure_Flack 10(10) 绝对构型参数_refine_ls_number_reflns 3110 参加结构精修的衍射点数_refine_ls_number_parameters 349 参加结构精修的参数数目_refine_ls_number_restraints 2 结构精修中几何限制数目_refine_ls_R_factor_all 0.0675 对全部衍射点的R1值_refine_ls_R_factor_gt 0.0593 对可观察衍射点的R1值_refine_ls_wR_factor_ref 0.1338 对全部衍射点的wR2值_refine_ls_wR_factor_gt 0.1302 对可观察衍射点的wR2值_refine_ls_goodness_of_fit_ref 1.012 对可观察衍射点的S值_refine_ls_restrained_S_all 1.011 对全部衍射点的S值_refine_ls_shift/su_max 0.000 最后精修过程的漂移值_refine_ls_shift/su_mean 0.000 最后精修过程的平均漂移值loop_ 结构中各原子坐标, 各向同性振动参数, 原子占有率等 _atom_site_label_atom_site_type_symbol_atom_site_fract_x_atom_site_fract_y_atom_site_fract_z_atom_site_U_iso_or_equiv_atom_site_adp_type_atom_site_occupancy_atom_site_symmetry_multiplicity_atom_site_calc_flag_atom_site_refinement_flags_atom_site_disorder_assembly_atom_site_disorder_groupC1 C 1.2011(4) 0.4816(5) 0.8674(5) 0.0472(10) Uani 1 1 d . . .H1 H 1.2238 0.5562 0.8420 0.057 Uiso 1 1 calc R . .C2 C 1.2551(4) 0.4303(4) 0.9917(5) 0.0457(10) Uani 1 1 d . . .H2 H 1.3139 0.4716 1.0505 0.055 Uiso 1 1 calc R . .C3 C 1.2239(4) 0.3174(4) 1.0323(5) 0.0417(9) Uani 1 1 d . . .H3 H 1.2609 0.2838 1.1173 0.050 Uiso 1 1 calc R . .C4 C 1.1362(4) 0.2566(4) 0.9422(4) 0.0418(10) Uani 1 1 d . . .H4 H 1.1148 0.1809 0.9666 0.050 Uiso 1 1 calc R . .C5 C 1.0805(4) 0.3081(5) 0.8167(4) 0.0469(11) Uani 1 1 d . . .H5 H 1.0219 0.2672 0.7571 0.056 Uiso 1 1 calc R . .C6 C 1.1126(3) 0.4217(4) 0.7798(5) 0.0421(9) Uani 1 1 d . . .C7 C 1.0508(3) 0.4875(4) 0.6585(5) 0.0426(10) Uani 1 1 d . . .H7 H 1.0694 0.5672 0.6446 0.051 Uiso 1 1 calc R . .H8 H 0.9451 0.3521 0.5747 0.052 Uiso 1 1 calc R . .C9 C 0.9049(4) 0.5050(4) 0.4446(4) 0.0435(10) Uani 1 1 d . . . H9 H 0.9175 0.5870 0.4333 0.052 Uiso 1 1 calc R . .C10 C 0.6810(4) 0.4686(4) 0.1451(4) 0.0391(9) Uani 1 1 d . . . C11 C 0.5998(4) 0.5425(4) 0.0516(4) 0.0438(10) Uani 1 1 d . . . C12 C 0.5471(3) 0.5017(4) -0.0823(4) 0.0356(8) Uani 1 1 d . . . H12 H 0.5587 0.4233 -0.1093 0.043 Uiso 1 1 calc R . .C13 C 0.4793(4) 0.5778(4) -0.1716(5) 0.0413(9) Uani 1 1 d . . . H13 H 0.4438 0.5497 -0.2599 0.050 Uiso 1 1 calc R . .C14 C 0.5136(4) 0.7372(4) -0.0082(4) 0.0427(9) Uani 1 1 d . . . H14 H 0.5025 0.8165 0.0165 0.051 Uiso 1 1 calc R . .C15 C 0.5845(3) 0.6620(4) 0.0872(4) 0.0432(10) Uani 1 1 d . . . H15 H 0.6216 0.6914 0.1743 0.052 Uiso 1 1 calc R . .C16 C 0.4052(4) 0.0511(4) -0.2985(4) 0.0424(9) Uani 1 1 d . . . H16 H 0.4482 -0.0181 -0.2728 0.051 Uiso 1 1 calc R . .C17 C 0.3238(3) 0.0544(4) -0.4232(4) 0.0400(9) Uani 1 1 d . . . H17 H 0.3127 -0.0128 -0.4814 0.048 Uiso 1 1 calc R . .C18 C 0.2588(4) 0.1560(4) -0.4623(5) 0.0455(10) Uani 1 1 d . . . H18 H 0.2039 0.1569 -0.5459 0.055 Uiso 1 1 calc R . .C19 C 0.2761(4) 0.2580(4) -0.3752(4) 0.0417(9) Uani 1 1 d . . . H19 H 0.2328 0.3269 -0.4015 0.050 Uiso 1 1 calc R . .C20 C 0.3577(3) 0.2565(4) -0.2498(4) 0.0356(8) Uani 1 1 d . . . H20 H 0.3689 0.3242 -0.1923 0.043 Uiso 1 1 calc R . .C21 C 0.4226(4) 0.1536(4) -0.2104(4) 0.0462(10) Uani 1 1 d . . . C22 C 0.5026(4) 0.1586(4) -0.0775(5) 0.0462(10) Uani 1 1 d . . . H22 H 0.5019 0.2227 -0.0175 0.055 Uiso 1 1 calc R . .C23 C 0.5807(4) 0.0677(4) -0.0391(4) 0.0433(10) Uani 1 1 d . . . H23 H 0.5931 0.0067 -0.0970 0.052 Uiso 1 1 calc R . .C24 C 0.6411(3) 0.0828(4) 0.1081(4) 0.0398(9) Uani 1 1 d . . . H24 H 0.6423 0.1533 0.1594 0.048 Uiso 1 1 calc R . .C25 C 0.8300(4) -0.1108(5) 0.3489(5) 0.0502(11) Uani 1 1 d . . . C26 C 0.8954(4) -0.0909(4) 0.4904(5) 0.0441(10) Uani 1 1 d . . . C27 C 0.9750(4) -0.0014(4) 0.5288(5) 0.0405(9) Uani 1 1 d . . . H27 H 0.9822 0.0570 0.4650 0.049 Uiso 1 1 calc R . .C28 C 1.0442(4) 0.0012(5) 0.6632(5) 0.0505(11) Uani 1 1 d . . . H28 H 1.0965 0.0623 0.6904 0.061 Uiso 1 1 calc R . .C29 C 0.9555(3) -0.1774(4) 0.7183(4) 0.0421(9) Uani 1 1 d . . . H29 H 0.9483 -0.2360 0.7819 0.051 Uiso 1 1 calc R . .C30 C 0.8865(3) -0.1796(3) 0.5848(4) 0.0337(8) Uani 1 1 d . . . H30 H 0.8341 -0.2407 0.5582 0.040 Uiso 1 1 calc R . .N1 N 0.8334(3) 0.4414(3) 0.3586(4) 0.0397(8) Uani 1 1 d . . .N2 N 0.7663(3) 0.5206(4) 0.2548(4) 0.0423(9) Uani 1 1 d . . .H2A H 0.777(4) 0.598(5) 0.259(5) 0.051 Uiso 1 1 d . . .N4 N 0.6918(3) -0.0162(3) 0.1548(4) 0.0424(8) Uani 1 1 d . . .N5 N 0.7800(3) -0.0023(3) 0.2797(3) 0.0368(8) Uani 1 1 d . . .H5A H 0.833(4) 0.042(4) 0.259(5) 0.044 Uiso 1 1 d . . .N6 N 1.0342(3) -0.0891(4) 0.7569(4) 0.0491(9) Uani 1 1 d . . .O1 O 0.6774(2) 0.3578(3) 0.1322(3) 0.0434(7) Uani 1 1 d . . .O2 O 0.8172(2) -0.2090(3) 0.2914(3) 0.0440(7) Uani 1 1 d . . .loop_ 原子各向异性振动参数_atom_site_aniso_label_atom_site_aniso_U_11_atom_site_aniso_U_22_atom_site_aniso_U_33_atom_site_aniso_U_23_atom_site_aniso_U_13_atom_site_aniso_U_12C1 0.042(2) 0.052(3) 0.051(3) 0.004(2) 0.019(2) -0.006(2)C2 0.042(2) 0.048(2) 0.049(3) -0.011(2) 0.017(2) -0.0034(19)C3 0.043(2) 0.044(2) 0.043(2) -0.0022(18) 0.0214(19) 0.0020(18)C4 0.048(2) 0.042(2) 0.042(2) 0.0100(17) 0.0227(19) -0.0146(18)C5 0.037(2) 0.071(3) 0.035(2) -0.010(2) 0.0134(17) -0.014(2)C6 0.0332(18) 0.050(2) 0.046(2) -0.0088(19) 0.0149(17) 0.0070(18) C7 0.037(2) 0.043(2) 0.054(3) -0.014(2) 0.0238(19) 0.0071(18)C8 0.040(2) 0.041(2) 0.053(3) 0.0057(19) 0.0167(19) 0.0142(18)C9 0.051(2) 0.050(2) 0.0264(19) -0.0123(18) 0.0053(17) 0.003(2)C10 0.044(2) 0.036(2) 0.040(2) 0.0063(17) 0.0151(17) -0.0233(18)C11 0.054(3) 0.041(2) 0.038(2) -0.0013(18) 0.0163(19) -0.006(2)C12 0.0331(19) 0.038(2) 0.043(2) -0.0088(16) 0.0221(16) 0.0074(16) C13 0.042(2) 0.046(2) 0.040(2) -0.0042(18) 0.0172(18) -0.0041(19) C14 0.048(2) 0.042(2) 0.037(2) -0.0103(18) 0.0103(18) -0.0053(19) C15 0.041(2) 0.056(3) 0.032(2) -0.0133(18) 0.0092(17) -0.0076(19) C16 0.051(2) 0.045(2) 0.031(2) 0.0038(17) 0.0121(17) -0.005(2)C17 0.036(2) 0.046(2) 0.036(2) -0.0079(17) 0.0074(17) -0.0121(17) C18 0.047(2) 0.047(2) 0.043(2) -0.013(2) 0.0108(19) -0.0120(19)C19 0.049(2) 0.043(2) 0.034(2) -0.0051(17) 0.0128(18) -0.0036(19) C20 0.0386(19) 0.036(2) 0.037(2) 0.0037(16) 0.0175(16) -0.0144(16) C21 0.055(3) 0.051(3) 0.037(2) 0.0099(19) 0.0198(19) -0.004(2)C22 0.046(2) 0.044(2) 0.051(3) -0.0061(19) 0.018(2) 0.0147(19)C23 0.044(2) 0.045(2) 0.040(2) -0.0135(18) 0.0095(18) 0.0018(19)C24 0.0314(18) 0.052(2) 0.037(2) -0.0110(18) 0.0113(16) -0.0043(17) C25 0.050(2) 0.052(3) 0.054(3) 0.003(2) 0.022(2) 0.013(2)C26 0.047(2) 0.045(2) 0.049(3) 0.005(2) 0.028(2) 0.003(2)C27 0.038(2) 0.046(2) 0.044(2) 0.0012(18) 0.0225(18) 0.0001(17)C28 0.050(2) 0.063(3) 0.038(2) -0.009(2) 0.0126(19) -0.011(2)C29 0.040(2) 0.047(2) 0.044(2) -0.0077(18) 0.0202(18) 0.0067(18)C30 0.0285(16) 0.0339(19) 0.044(2) -0.0027(16) 0.0190(15) 0.0102(14)N1 0.0374(17) 0.0327(17) 0.0451(19) 0.0001(14) 0.0045(14) -0.0052(14)N2 0.0305(17) 0.045(2) 0.0435(19) 0.0138(16) -0.0034(14) -0.0151(15)N3 0.0488(19) 0.0410(19) 0.0321(17) 0.0002(15) 0.0182(14) 0.0031(16)N4 0.055(2) 0.0406(19) 0.0303(17) -0.0039(15) 0.0093(16) -0.0081(17)N5 0.0338(17) 0.0399(18) 0.0350(18) -0.0011(14) 0.0064(14) -0.0151(14)N6 0.043(2) 0.062(2) 0.049(2) -0.0041(19) 0.0230(17) -0.0020(18)O1 0.0396(15) 0.0449(17) 0.0474(17) -0.0059(13) 0.0152(13) -0.0096(13)O2 0.0434(15) 0.0455(17) 0.0413(16) 0.0034(14) 0.0084(12) 0.0001(13)_geom_special_details 分子几何中需要说明的问题;All esds (except the esd in the dihedral angle between two l.s. planes)are estimated using the full covariance matrix. The cell esds are takeninto account individually in the estimation of esds in distances, anglesand torsion angles; correlations between esds in cell parameters are onlyused when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.;loop__geom_bond_atom_site_label_1 分子中原子间键长列表_geom_bond_atom_site_label_2_geom_bond_distance_geom_bond_site_symmetry_2_geom_bond_publ_flagC1 C2 1.369(7) . ?C1 C6 1.385(7) . ?C1 H1 0.9300 . ?C2 C3 1.400(6) . ?C2 H2 0.9300 . ?C3 C4 1.394(6) . ?C3 H3 0.9300 . ?C4 C5 1.386(6) . ?C4 H4 0.9300 . ?C5 C6 1.397(7) . ?C5 H5 0.9300 . ?C6 C7 1.447(7) . ?C7 C8 1.375(7) . ?C7 H7 0.9300 . ?C8 C9 1.467(6) . ?C8 H8 0.9300 . ?C9 N1 1.273(5) . ?C10 O1 1.228(5) . ? C10 N2 1.432(5) . ? C10 C11 1.437(6) . ? C11 C15 1.393(6) . ? C11 C12 1.400(6) . ? C12 C13 1.347(6) . ? C12 H12 0.9300 . ? C13 N3 1.390(6) . ? C13 H13 0.9300 . ? C14 N3 1.362(5) . ? C14 C15 1.390(7) . ? C14 H14 0.9300 . ? C15 H15 0.9300 . ? C16 C17 1.385(6) . ? C16 C21 1.415(7) . ? C16 H16 0.9300 . ? C17 C18 1.379(7) . ? C17 H17 0.9300 . ? C18 C19 1.405(6) . ? C18 H18 0.9300 . ? C19 C20 1.391(6) . ? C19 H19 0.9300 . ? C20 C21 1.391(6) . ? C20 H20 0.9300 . ? C21 C22 1.437(6) . ? C22 C23 1.383(6) . ? C22 H22 0.9300 . ? C23 C24 1.475(6) . ? C23 H23 0.9300 . ? C24 N4 1.287(6) . ? C24 H24 0.9300 . ? C25 O2 1.216(6) . ? C25 N5 1.439(6) . ? C25 C26 1.451(7) . ? C26 C27 1.385(6) . ? C26 C30 1.388(6) . ? C27 C28 1.391(7) . ? C27 H27 0.9300 . ? C28 N6 1.399(7) . ? C28 H28 0.9300 . ? C29 N6 1.368(6) . ? C29 C30 1.384(6) . ? C29 H29 0.9300 . ?N1 N2 1.442(5) . ?N2 H2A 0.86(5) . ?N4 N5 1.437(5) . ?N5 H5A 0.90(5) . ?loop__geom_angle_atom_site_label_1 分子中原子间键角列表 _geom_angle_atom_site_label_2_geom_angle_atom_site_label_3_geom_angle_geom_angle_site_symmetry_1_geom_angle_site_symmetry_3_geom_angle_publ_flagC2 C1 C6 119.7(5) . . ?C2 C1 H1 120.1 . . ?C6 C1 H1 120.1 . . ?C1 C2 C3 121.6(4) . . ?C1 C2 H2 119.2 . . ?C3 C2 H2 119.2 . . ?C4 C3 C2 118.4(4) . . ?C4 C3 H3 120.8 . . ?C2 C3 H3 120.8 . . ?C5 C4 C3 120.5(4) . . ?C5 C4 H4 119.8 . . ?C3 C4 H4 119.8 . . ?C4 C5 C6 119.9(4) . . ?C4 C5 H5 120.1 . . ?C6 C5 H5 120.1 . . ?C1 C6 C5 120.0(4) . . ?C1 C6 C7 116.7(5) . . ?C5 C6 C7 123.0(4) . . ?C8 C7 C6 120.0(4) . . ?C8 C7 H7 120.0 . . ?C6 C7 H7 120.0 . . ?C7 C8 C9 116.9(4) . . ?C7 C8 H8 121.5 . . ?C9 C8 H8 121.5 . . ?N1 C9 C8 111.1(4) . . ?N1 C9 H9 124.4 . . ?C8 C9 H9 124.4 . . ?O1 C10 N2 118.5(4) . . ?O1 C10 C11 119.7(4) . . ?N2 C10 C11 121.7(4) . . ?C15 C11 C12 119.1(4) . . ? C15 C11 C10 119.5(4) . . ? C12 C11 C10 120.7(4) . . ? C13 C12 C11 119.1(4) . . ? C13 C12 H12 120.4 . . ?C11 C12 H12 120.4 . . ?C12 C13 N3 122.8(4) . . ? C12 C13 H13 118.6 . . ?N3 C13 H13 118.6 . . ?N3 C14 C15 121.0(4) . . ? N3 C14 H14 119.5 . . ?C15 C14 H14 119.5 . . ?C14 C15 C11 119.7(4) . . ? C14 C15 H15 120.1 . . ?C11 C15 H15 120.1 . . ?C17 C16 C21 119.6(4) . . ? C17 C16 H16 120.2 . . ?C21 C16 H16 120.2 . . ?C18 C17 C16 120.9(4) . . ? C18 C17 H17 119.6 . . ?C16 C17 H17 119.6 . . ?C17 C18 C19 119.6(4) . . ? C17 C18 H18 120.2 . . ?C19 C18 H18 120.2 . . ?C20 C19 C18 120.3(4) . . ? C20 C19 H19 119.9 . . ?C18 C19 H19 119.9 . . ?C21 C20 C19 119.9(4) . . ? C21 C20 H20 120.1 . . ?C19 C20 H20 120.1 . . ?C20 C21 C16 119.7(4) . . ? C20 C21 C22 116.2(4) . . ? C16 C21 C22 124.1(4) . . ? C23 C22 C21 119.7(4) . . ? C23 C22 H22 120.1 . . ?C21 C22 H22 120.1 . . ?C22 C23 C24 109.2(4) . . ? C22 C23 H23 125.4 . . ?C24 C23 H23 125.4 . . ?N4 C24 C23 109.7(4) . . ? N4 C24 H24 125.1 . . ?C23 C24 H24 125.1 . . ?O2 C25 N5 121.8(5) . . ? O2 C25 C26 124.4(4) . . ?N5 C25 C26 113.8(4) . . ?C27 C26 C30 120.0(4) . . ?C27 C26 C25 123.7(4) . . ?C30 C26 C25 115.6(4) . . ?C26 C27 C28 119.9(4) . . ?C26 C27 H27 120.1 . . ?C28 C27 H27 120.1 . . ?C27 C28 N6 119.3(4) . . ?C27 C28 H28 120.3 . . ?N6 C28 H28 120.3 . . ?N6 C29 C30 120.1(4) . . ?N6 C29 H29 120.0 . . ?C30 C29 H29 120.0 . . ?C29 C30 C26 120.2(4) . . ?C29 C30 H30 119.9 . . ?C26 C30 H30 119.9 . . ?C9 N1 N2 108.8(4) . . ?C10 N2 N1 118.8(3) . . ?C10 N2 H2A 121(3) . . ?N1 N2 H2A 121(3) . . ?C14 N3 C13 118.2(4) . . ?C24 N4 N5 114.5(3) . . ?N4 N5 C25 117.7(4) . . ?N4 N5 H5A 108(3) . . ?C25 N5 H5A 108(3) . . ?C29 N6 C28 120.5(4) . . ?loop__geom_hbond_atom_site_label_D 分子内或分子间氢键列表_geom_hbond_atom_site_label_H_geom_hbond_atom_site_label_A_geom_hbond_distance_DH_geom_hbond_distance_HA_geom_hbond_distance_DA_geom_hbond_angle_DHA_geom_hbond_site_symmetry_AN2 H2A O2 0.86(5) 2.19(5) 3.049(5) 174(5) 1_565N5 H5A N6 0.90(5) 2.59(5) 3.427(5) 154(4) 2_554_diffrn_measured_fraction_theta_max 0.983 对精修时最大衍射角θ,衍射数据收集的完备率_diffrn_reflns_theta_full 27.74 精修时最大衍射角θ_diffrn_measured_fraction_theta_full 0.983 衍射数据的完备率_refine_diff_density_max 0.204 差值傅立叶图中最大残余电子密度峰值_refine_diff_density_min -0.289 差值傅立叶图中最消残余电子密度谷值_refine_diff_density_rms 0.039 差值傅立叶图中平均电子密度。
1ZC24中文资料
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE1ZC12~1ZC120CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USESl Average Power Dissipation : P = 1.0W l Zener Voltage : V Z = 12~120 Vl Tolerance of Zener Voltage (V Z ) : ±10%l Plastic Mold PackageMAXIMUM RATINGS (Ta=25°C)CHARACTERISTIC SYMBOL RATINGUNITPower Dissipation P 1.0WJunction Temperature T j −40~150 °C Storage Temperature RangeT stg−40~150 °CMARKINGJEDEC ―EIAJ ― TOSHIBA 3−3F2A Weight: 0.18g (Typ.)Unit: mm TENTATIVEELECTRICAL CHARACTERISTICS (Ta=25°C)ZENER CHARACTERISTICSFORWARDVOLTAGEREVERSE CURRENT ZENER VOLTAGE V Z (V) ZENER IMPEDANCE r d (Ω)TEMPERATURE COEFFICIENTOF ZENER VOLTAGEαT (mV / °C) V F (V) I R (µA) TYPEMIN. TYP. MAX. MAX. MEASURE-MENT CURRENT I Z (mA)TYP.MAX.MAX. MEASURE-MENTCURRENT I F (A) MAXMEASURE-MENT VOLTAGE V R (V)1ZC12 10.8 12 13.2 30 10 8 13 1.2 0.2 10 8.0 1ZC13 11.7 13 14.3 30 10 9 14 1.2 0.2 10 9.0 1ZC15 13.5 15 16.5 30 10 11 17 1.2 0.2 10 10.0 1ZC16 14.4 16 17.6 30 10 12 19 1.2 0.2 10 11.0 1ZC18 16.2 18 19.8 30 10 14 23 1.2 0.2 10 13.0 1ZC20 18.0 20 22.0 30 10 16 26 1.2 0.2 10 14.0 1ZC22 19.8 22 24.2 30 10 18 28 1.2 0.2 10 16.0 1ZC24 21.6 24 26.4 30 10 20 32 1.2 0.2 10 17.0 1ZC27 24.3 27 29.7 30 10 23 36 1.2 0.2 10 19.0 1ZC30 27.0 30 33.0 30 10 25 40 1.2 0.2 10 21.0 1ZC33 29.7 33 36.3 30 10 26 41 1.2 0.2 10 26.4 1ZC36 32.4 36 39.6 30 9 28 45 1.2 0.2 10 28.8 1ZC39 35.1 39 42.9 35 8 30 48 1.2 0.2 10 31.2 1ZC43 38.7 43 47.3 40 7 33 53 1.2 0.2 10 34.4 1ZC47 42.3 47 51.7 65 6 38 60 1.2 0.2 10 37.6 1ZC51 45.9 51 56.1 65 6 43 68 1.2 0.2 10 40.8 1ZC56 50.4 56 61.6 855 48 77 1.2 0.2 10 44.81ZC62 55.8 62 68.2 105 5 53 85 1.2 0.2 10 49.6 1ZC68 61.2 68 74.8 120 4 57 90 1.2 0.2 10 54.4 1ZC75 67.5 75 82.5 150 4 66 104 1.2 0.2 10 60.0 1ZC82 73.8 82 90.2 170 3 71 113 1.2 0.2 10 65.4 1ZC91 81.9 91 100.1 240 3 79 127 1.2 0.2 10 72.8 1ZC100 90.0 100 110.0 300 3 87 138 1.2 0.2 10 80.0 1ZC110 99.0 110 121.0 300 3 96 152 1.2 0.2 10 88.0 1ZC120 108.0 120 132.0 3502.5 106 171 1.2 0.2 10 96.0· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EAARESTRICTIONS ON PRODUCT USE。
Z86C9301ZPD中文资料
Any Pass Counter Sequencer Trace Full condition
Address Bus
s
Data Bus
s
Control signals I/O pins Real-time Clock Stamp User logic inputs (8 bits) The Trace Buffer contents can also be examined during program execution without slowing down the microcontroller. Additionally, the Trace Buffer is equipped with a special internal counter that allows tracing to stop after a specified number of instructions or cycles. This feature allows a trace to catch as much as 32K of small fragments (snapshots) of executed program at full running speed.
P R E L I M I N A R Y
Z8 REAL-TIME S ERIES CPS DC-4026-08
CUSTOMER PROCUREMENT SPECIFICATION
Z8®
REAL-TIME S SERIES IN-CIRCUIT EMULATOR
MAIN FEATURES
s
Interchangeable µP Pods to Emulate Various Z8 Family Members Source Level Debug for C
依瓦克EVACINCLICK 910系统 中文资料
Doc. 9:00030K
CUSTOMER SUPPORT
IFÖ型坐便器新老型号对照表
可替换配件 请识别老型号编号并选择对应替代配件.
Old products Name Toilet IFÖ Wall Combi Toilet IFÖ Wall Combii Toilet IFÖ Wall Kandre Toilet IFÖ Wall Kandre Toilet IFÖ Floor Combi Toilet IFÖ Floor Kandre Toilet IFÖ Wall Combi, USPH Toilet IFÖ Wall Kandre, USPH Toilet bowl IFÖ with flushing ring Flushing ring Discharge valve
5435259 or 43525.9
5435261 or 43526.0
5435265 or 43526.5
Replacing products
P/N
Name
► 6542545 ► ► 6542545 ► ► 6542544 ► ► 6542544 ► ► 6545826 ► ► 6545825 ► ► 6542547
5435349 膜盒支架 Old no: 43534.9
5441201 座圈和盖子 Old no: 4412.01
EVAC reserves the right to make alterations to this speci cation without prior notice. © Copyright Evac Oy. All rights reserved.
Discharge valve
EvacInclick flushing control units för IFÖ-toilets EvacInclick 1, flush control unit EvacInclick 2, flush control unit EvacInclick 3, flush control unit EvacInclick 1, flush control unit EvacInclick 2, flush control unit EvacInclick 3, flush control unit EvacInclick 1, flush control unit EvacInclick 2, flush control unit EvacInclick 3, flush control unit
山东省《建筑施工现场安全管理资料规程》(DB375063-2016)
DB山东省工程建设标准DB37/5063-2016 J13512-2016建筑施工现场安全管理资料规程Management specification of construction siteSafety Management Documents2016-07-21 发布 2016-09-01 实施联合发布 山东省住房和城乡建设厅 山东省质量技术监督局山东省工程建设标准建筑施工现场安全管理资料规程Management specification of construction site Safety Management DocumentsDB37/5063-2016住房和城乡建设部备案号:J13512-2016主编单位:山东省建筑施工安全监督站山东省建筑安全与设备管理协会批准部门:山东省住房和城乡建设厅山东省质量技术监督局发布日期:2016年07月21日施行日期:2016年09月01日前言为规范施工现场安全管理资料的编制和管理工作,加强施工过程中各个环节、部位的安全管理,根据山东省住房和城乡建设厅2015年工程建设标准编制计划的安排,山东省建筑施工安全监督站、山东省建筑安全与设备管理协会在广泛调研的基础上,参考国家相关标准,结合我省建筑施工安全管理实践经验,编制了本规程。
本规程的主要技术内容是:1.总则;2.术语;3.安全管理资料的管理;4.安全管理资料的分类与整理;5.建设单位施工现场安全管理资料;6.监理单位施工现场安全管理资料;7.施工单位施工现场安全管理资料;附录A、B、C均为本规程的资料性附录,附录D为参考性附录。
本规程由山东省住房和城乡建设厅负责管理,山东省建筑施工安全监督站负责具体技术内容的解释。
本规程在编制过程中难免存在疏漏之处,各单位在使用过程中如有意见或建议请反馈给山东省建筑施工安全监督站(地址:济南市正觉寺小区一区1号,邮编:250011,电子信箱:**************),以便修订时参考。
C8991资料
GENERALFEATURESSPECIFICATIONS ParameterDescription/ValueUnit Output High Voltage Range Input Voltage RangeControl Voltage / Output Voltage Ratio Control Voltage Range Settling Time AOutput Signal ModeOperating Ambient Temperature B Storage Temperature B WeightI Compact and LightweightI Low Power Consumption (8 mA Max., without signal output)I Wide Output LinearityI No Handling of High Voltage I Easy Handling-200 to -1200+11.5 to +15.51 : 103+0.2 to +1.210Current output 0 to +50-15 to +60Approx. 71V V —V s —°C °C gCHARACTERISTlCS (at +25 °C, -1000 V)DP TYPE SOCKET ASSEMBLYFOR 28 mm(1-1/8 INCH) SIDE-ON PHOTOMULTIPLIER TUBEC8991MAXIMUM RATINGS (Absolute Maximum Values)ParameterValue Output High Voltage Supply Voltage Control Voltage-1200+18+1.2V V VUnit ParameterValue Input Current (Without signal input)Temperature Coefficient (+20 °C to +40 °C)Anode Ripple Interference CLinear DC Output Current of PMT DTyp.Max.Max.Typ.80.0050.011100mA %/°C %/°C mV µAUnit C R L = 1 M Ω, C L = 25 pFD Within ±0.5 % linearityNOTE:A The time required for the output to reach a stable level following a change in the control voltage from +1.0 V to +0.5 V.B No condensation.NOTE:High Voltage Power Supply and Divider Assemblyfor Standard 28 mm (1-1/8 inch) Side-on Photomultiplier TubeThe C8991 is a compact and lightweight socket assembly incorpor-ating a socket, voltage divider circuit and high voltage power supply designed for use with 28 mm(1-1/8") side-on type photomultiplier tube. It features low power consumption and superior output linearity comparing with conventional socket assemblies. In addition, it allows easy handling to operate with +15 V input voltage and connecting to a potentiometer or a +0.2 V to +1.2 V for output voltage adjustments.FEB. 2004Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.* HV cont. Input: Impedance of 1 M ΩDP TYPE SOCKET ASSEMBLY C8991TACC1027E02FEB. 2004 IPTACCB0008EATACCC0117EATACCA0053EDFigure 1: Control Voltage/Output Voltage CharacteristicsFigure 2: Sensitivity Adjustment MethodeFigure 3: Dimensional Outline (Unit: mm)CONTROL VOLTAGE (V)+0.2+0.6+1.2O U T P U T V O L T A G E (V )-200-400+0.4+0.8+1.0-600-800-1000-12001)1)VOLTAGE PROGRAMMINGRESISTANCE PROGRAMMINGhigh voltage output.*The case is internally connected to black (GND) wire.Top ViewSide ViewHOUSING DIRECTION OF LIGHTSIGNAL OUTPUT +15 V INPUTHV CONTROL INPUT Vref OUTPUT GROUNDCOAX RG-174/U AWG 22, RED AWG 22, WHITE AWG 22, BLUE AWG 22, BLACKHAMAMATSU PHOTONICS K.K., Electron Tube Division314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.deFrance: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.frUnited Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@ North Europe: Hamamatsu Photonics Norden AB: Smidesv ägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.itWEB SITE 。
18CZ 规则手册说明书
18CZ规则手册中文翻译目录准备游戏................................................................................................................................................ - 3 -1.一般信息................................................................................................................................... - 3 -2.起始资金................................................................................................................................... - 3 -3.其他注意事项 ......................................................................................................................... - 3 -公司......................................................................................................................................................... - 4 -1.地方铁路................................................................................................................................... - 4 -2.股份公司................................................................................................................................... - 5 -2.1.一般信息.......................................................................................................................... - 5 -2.2.小型股份公司(区域性铁轨公司) ....................................................................... - 5 -2.3.中型股份公司(主要铁轨公司)............................................................................ - 6 -2.4.大型股份公司(国际铁轨公司)............................................................................ - 6 -游戏流程................................................................................................................................................ - 8 -预先股票轮........................................................................................................................................... - 8 -股票轮(SR)...................................................................................................................................... - 9 -1.一般信息................................................................................................................................... - 9 -2.SR顺位...................................................................................................................................... - 9 -3.购买股份................................................................................................................................... - 9 -4.股份及证书上限................................................................................................................... - 10 -5.总裁就职................................................................................................................................. - 10 -6.出售股份................................................................................................................................. - 12 -运营轮(OR)................................................................................................................................... - 13 -1.一般信息................................................................................................................................. - 13 -2.OR流程 .................................................................................................................................. - 13 -3.股份公司的行动流程.......................................................................................................... - 13 -4.铺设铁轨................................................................................................................................. - 13 -5.升级铁轨................................................................................................................................. - 15 -6.建造车站................................................................................................................................. - 15 -7.运营火车................................................................................................................................. - 16 -8.计算收入................................................................................................................................. - 17 -9.收购其他公司 ....................................................................................................................... - 19 -10.购买火车............................................................................................................................ - 20 -11.紧急融资............................................................................................................................ - 21 -12.阶段变化............................................................................................................................ - 21 -火车报废..................................................................................................................................... - 23 -13.移除火车............................................................................................................................ - 23 -股份价格变动..................................................................................................................................... - 24 -游戏结束.............................................................................................................................................. - 25 -附录....................................................................................................................................................... - 26 -准备游戏1.一般信息●禁止打伙牌,禁止长考;●玩家、公司的资产以及其他信息应完全公开;2.起始资金游戏人数 3 4 5起始资金350克朗300克朗250克朗3.其他注意事项●展开游戏版图和股份面板。
HTT1213E中文资料
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
Collector to base breakdown V(BR)CBO voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio ICBO ICEO IEBO hFE
URL
/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : .sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL :
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TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE1ZC12~1ZC120CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USESl Average Power Dissipation : P = 1.0W l Zener Voltage : V Z = 12~120 Vl Tolerance of Zener Voltage (V Z ) : ±10%l Plastic Mold PackageMAXIMUM RATINGS (Ta=25°C)CHARACTERISTIC SYMBOL RATINGUNITPower Dissipation P 1.0WJunction Temperature T j −40~150 °C Storage Temperature RangeT stg−40~150 °CMARKINGJEDEC ―EIAJ ― TOSHIBA 3−3F2A Weight: 0.18g (Typ.)Unit: mm TENTATIVEELECTRICAL CHARACTERISTICS (Ta=25°C)ZENER CHARACTERISTICSFORWARDVOLTAGEREVERSE CURRENT ZENER VOLTAGE V Z (V) ZENER IMPEDANCE r d (Ω)TEMPERATURE COEFFICIENTOF ZENER VOLTAGEαT (mV / °C) V F (V) I R (µA) TYPEMIN. TYP. MAX. MAX. MEASURE-MENT CURRENT I Z (mA)TYP.MAX.MAX. MEASURE-MENTCURRENT I F (A) MAXMEASURE-MENT VOLTAGE V R (V)1ZC12 10.8 12 13.2 30 10 8 13 1.2 0.2 10 8.0 1ZC13 11.7 13 14.3 30 10 9 14 1.2 0.2 10 9.0 1ZC15 13.5 15 16.5 30 10 11 17 1.2 0.2 10 10.0 1ZC16 14.4 16 17.6 30 10 12 19 1.2 0.2 10 11.0 1ZC18 16.2 18 19.8 30 10 14 23 1.2 0.2 10 13.0 1ZC20 18.0 20 22.0 30 10 16 26 1.2 0.2 10 14.0 1ZC22 19.8 22 24.2 30 10 18 28 1.2 0.2 10 16.0 1ZC24 21.6 24 26.4 30 10 20 32 1.2 0.2 10 17.0 1ZC27 24.3 27 29.7 30 10 23 36 1.2 0.2 10 19.0 1ZC30 27.0 30 33.0 30 10 25 40 1.2 0.2 10 21.0 1ZC33 29.7 33 36.3 30 10 26 41 1.2 0.2 10 26.4 1ZC36 32.4 36 39.6 30 9 28 45 1.2 0.2 10 28.8 1ZC39 35.1 39 42.9 35 8 30 48 1.2 0.2 10 31.2 1ZC43 38.7 43 47.3 40 7 33 53 1.2 0.2 10 34.4 1ZC47 42.3 47 51.7 65 6 38 60 1.2 0.2 10 37.6 1ZC51 45.9 51 56.1 65 6 43 68 1.2 0.2 10 40.8 1ZC56 50.4 56 61.6 855 48 77 1.2 0.2 10 44.81ZC62 55.8 62 68.2 105 5 53 85 1.2 0.2 10 49.6 1ZC68 61.2 68 74.8 120 4 57 90 1.2 0.2 10 54.4 1ZC75 67.5 75 82.5 150 4 66 104 1.2 0.2 10 60.0 1ZC82 73.8 82 90.2 170 3 71 113 1.2 0.2 10 65.4 1ZC91 81.9 91 100.1 240 3 79 127 1.2 0.2 10 72.8 1ZC100 90.0 100 110.0 300 3 87 138 1.2 0.2 10 80.0 1ZC110 99.0 110 121.0 300 3 96 152 1.2 0.2 10 88.0 1ZC120 108.0 120 132.0 3502.5 106 171 1.2 0.2 10 96.0· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EAARESTRICTIONS ON PRODUCT USE。