07级微电子机械系统技术大作业

合集下载
  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

简答:

1.什么是MEMS?

2.硅片加工包括哪几个工艺步骤?

3.基本光刻技术包括哪几个工艺步骤?4.光刻掩膜的阴版、阳版结构与光刻胶的正胶、负胶分别搭配使用时,能够刻蚀出什么样的结构?

5.二氧化硅层的作用是什么,及其制备方法有哪些?

6.CVD反应步骤包括哪些?

7.完成扩散工艺需要哪些步骤?

8.湿法腐蚀技术包括哪两种,用化学方程式解释说明硅湿法腐蚀机理

9.硅自停止腐蚀技术包括哪几种,简要说明其中一种自停止腐蚀技术?

10.如何通过自停止腐蚀技术制备“微喷嘴”,简要叙述其工艺步骤。

词汇:

1.Moore’s Law

2.pressure sensors

3.accelerometers

4.flow sensors

5.inkjet printers

6.deformable mirror devices

7.gas sensors

8.micromotors

9.microgears

10.lab-on-a-chip systems 11.Sacrificial layer process 12.Deep reactive ion etching 13.Wafer bonding 14.Piezoelectric films

15.Bulk-micromachining 16.Surface micromachining 17.Integrated Circuit Processes 18.Crystal growth

19.Oxidation

20.Lithography

21.Etching

22.Diffusion and ion implantation 23.Metallization

24.Chemical vapor deposition 25.Assembly and packaging 26.Crystal plane 27.Diamond structure

28.Doping

29.Crystal oriention

30.Isotropic etching of silicon 31.Anisotropic etching of silicon 32.Dopant dependent etch stop 33.Electrochemical etch stop

34.P-N Junction Etch Stop

35.Dry Etching

36.epitaxial

37.Silicon substrate

38.high-aspect-ratio

MEMS领域英文文献翻译:

Czochralski(CZ)pulled method

Melt ultrapure polycrystalline silicon and small amount of dopant in a quartz crucible under an inert atmosphere.

Clamp and dip a small single crystal see, with normal to its bottom face carefully aligned along a predetermined direction into the molten silicon.

Once the temperature equilibrium is established, the temperature of the melt in the vicinity of the seed crystal is reduced, and silicon from melt begins to freeze out onto the seed crystal.

The added materal is a structurally perfect extension of the seed crystal. The seed crystal is slowly rotated and withdrawn from the melt => more and more silicon to freeze out on the bottom of growing crystal.

Typical pull rate for 100mm dia ~20cm/hr.

Plasmas

Apply 1.5 kVDC over 15 cm, field is 100 V/cm. Breakdown of argon when electrons transfer a kinetic energy of 15.7 eV to the argon gas (electrons migrate from the cathode to the anode). These energetic collisions generate a second electron and a positive ion for each successful strike (ions migrate from the anode to the cathode). If creating an avalanche of ions and electrons, we get a

glow or plasma. At the start of a sustained gas breakdown, a current starts flowing and voltage drops to about 150V. To sustain a plasma, a mechanism must exist to generate additional free electrons after the plasma generating that have been captured at the anode. The additional electrons are formed by ions of sufficient energy striking the cathode (Auger electrons). This continuous generation provides a steady supply of electrons and a stable plasma.

相关文档
最新文档