CDBU0530-HF;中文规格书,Datasheet资料
FOSAN富信电子 二级管 FSHC3D15V1U-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FSHC3D15V1U SOD-323ESD静电保护二极管▉Features特点Un-directional ESD Protection单通道单向静电保护▉Applications应用Notebooks,desktops,and servers笔记本、台式机和服务器Control&monitoring systems控制与监视系统Portable Electronics桌面电子产品Communication system通讯系统▉Internal Schematic Diagram内部结构▉Device Marking产品打标▉Absolute Maximum Ratings最大额定值Characteristic 特性参数Symbol符号Rat额定值Unit单位ESD(IEC61000-4-2contact discharge)@25℃接触放电V ESD+30KV ESD(IEC61000-4-2air discharge)@25℃空气放电V ESD+30KV Peak Pulse Power@25℃峰值脉冲功率P PK2000W Peak Pulse Current@25℃峰值脉冲电流I PP80A Lead Temperature管脚温度T L260℃Lead Solder Time管脚焊接时间T L10S Operating Temperature工作温度T op-40~85℃Junction Temperature结温T J-55~125℃Storage Temperature储存温度T stg-55~150℃ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FSHC3D15V1U ▉Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic Parameters 特性参数Symbol符号Min最小值Typ典型值Max最大值Unit单位Condition条件Reverse Stand-off Voltage反向工作电压V RWM15VReverse Breakdown Voltage反向击穿电压V BR16.5V I T=1mA Reverse Leakage Current反向漏电流I R1µA V RWM=15V Clamping Voltage钳位电压V C20V I PP=1A,tp=8/20µs Clamping Voltage钳位电压V C35V I PP=80A,tp=8/20µs Diode Capacitance二极管电容C D400pF V R=0V,f=1MHzV RWM Reverse Working Voltage 反向工作电压V R(BR)Reverse Breakdown Voltage 反向击穿电压@I T=1mAI T Test Current测试电流I R Reverse Leakage Current反向漏电流@V RWMV C Clamping Voltage钳位电压I PP Reverse Peak Pulse Current浪涌电流C D Diode Capacitance结电容V IO=0V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FSHC3D15V1U ■Typical Characteristic Curve典型特性曲线■Typical Application典型应用ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.FSHC3D15V1U ▉Dimension外形封裝尺寸。
爱达顿电源分发单元G3 EMIB05系列说明说明书
Eaton EMIB05Eaton Metered Input rack PDU, 0U, 26U, Input IEC-60309 32A 1Ph, 7.4 kW max, 32A, 200-240V, Outlets 20XC13 : 4XC19General specificationsEaton metered input rack PDU EMIB057431720659021150 mm 52 mm 53 mm 4 kg 2 year CE Marked RoHS Compliant EAC CEIEC 60950-1 EN 55024:2010EPDU MI 0U (309 32A 1P)20XC13:4XC19Product NameCatalog Number UPCProduct Length/Depth Product Height Product Width Product Weight Warranty Compliances Certifications Model Code20Single-phase Connecting cord with plug Metric7.4 kW max0U (Vertical)Vertical32 AIEC-60309 32A 1PhDisplayAmpere Meter Mounting material50/60 Hz0° to 60°C (32° to 140°F) Yes Eaton ePDU G3 one-page overviewEaton ePDU G3 brochureEaton UPS Services Quick Guide 2021Eaton UPS and battery servicesEaton ePDU G3 - BrochureEaton RoHS Declaration of Conformity: ePDU G3EU Declaration of Conformity Eaton ePDUs G3Drawing EMIB05Eaton ePDU G3 EMP installation and connection quick start guide Eaton ePDU G3 operations manualEaton ePDU G3 replace and configure eNMC moduleEaton ePDU G3 - Installation and Connectivity Quick StartEaton ePDU G3 installation and connectivity quick start guide Eaton Double-wide G3 ePDU installation and connectivity quick start guideEaton ePDU G3 1U and 2U installation addendumEaton ePDU G3 instruction set - system objectsOptimizing rack power distributionQuick guide to power distributionNumber of Outputs C13PhaseElectrical connectionMounting dimension (standardized) WattageForm factorMounting directionAmperage RatingPackage contentsInput connectionFitted with:Frequency ratingOperating TemperatureEthernet interface BrochuresCertification reports Compliance information DrawingsManuals and user guides White papersRack PDUMounting accessories Network cable Configuration cable Splitter for daisy-chaining Quickstart guideSafety InstructionsNumber of outlets with earth pin24Circuit breaker(2) single-poleMass configurationYesCommunicationHTTP, HTTPS, SSL, Telnet, FTP, SNMP, SMTP, DNS, DHCP, LDAP, RADIUSSpecial featuresPhase Metering, CircuitBreaker Current Meteringand Input MeteringHot-Swap Control modulewith advanced LCDOptionalTemperature/HumiditysensorBuilt-in IEC outlet eGripretention, retains allstandard IEC plugsBuilt-in outlet P-lock system,locking mechanism with P-lock power cordsDaisy-Chain up to 8 PDUs,reduce networkinfratsructure costsPower chain monitoring &Real time Intelligence onyour Data Center, via EatonIntelligent Power Manager60°C Operating temperatureColour-coded outlet andbranch circuits for simpleload balancingHydraulic–Magnetic CircuitBreakers with accidental tripprotectionNumber of Outputs C194Outlet controlNoSwitchableEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All rights reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmediaNo 3m200-240V Black Yes Aluminium2(20) C13, (4) C19Rack PDU Yes52Cord length Input voltage Color SNMP Material Over voltage category OutletsType Serial interface Mounting Dimension (metrical)。
CDBU0230-HF;中文规格书,Datasheet资料
CDBU0230-HFOMaximum Rating (at T A =25C unless otherwise noted)Typ V RRM Repetitive peak reverse voltage Symbol ParameterConditionsMin Max UnitV 35V R Reverse voltageV 30I FSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method)3000P D mWOC 150+125-40Power Dissipation Sunction temperature T jOC+125Junction temperatureT STG mA I OAverage forward current mA 200Symbol Typ ParameterConditionsMin Max UnitOElectrical Characteristics (at T A =25C unless otherwise noted)I R uA Forward voltage I F = 200 mA DCV F V 0.509C TCapacitance between terimnalspFF = 1 MHZ and 10 VDC reverse voltageReverse currentV R = 30V30Features-Designed for mounting on small surface. -Extremely thin/leadless package. -Low drop-down voltage. -Majority carrier conduction.Mechanical data-Case: 0603 standard package, molded plastic.-Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & B5 -Mounting position: Any -Weight: 0.003 gram(approx.)./SOD-523F I o = 200 mA V R = 30 Volts RoHS Device Halogen FreeRATING AND CHARACTERISTIC CURVES (CDBU0230-HF)20406080100255075100125150Mounting on glass epoxy PCBs110 10030101520250 10 20 30 4010u 1m1n1u100u 10m 100n 10n 0.10.20.40.70.50.310000.001101000.610.10.01C a p a c i t a n c e b e t w e e n t e r m i n a l s (P F )Reverse voltage (V)F o r w a r d c u r r e n t (m A )Forward voltage (V) Fig. 1 - Forward characteristicsReverse voltage (V)Fig. 2 - Reverse characteristicsOAmbient temperature (C)Fig.4 - Current derating curveFig.3 - Capacitance between terminals characteristicsR e v e r s e c u r r e n t ( A )A v e r a g e f o r w a r d c u r r e n t (%)BCdDD 2D 1EFPP 0P 1TSYMBOLAWW 1(mm)(inch)0.039 0.004±0.073 0.004±0.039 0.004±0.061 0.002±7.008 0.04± 2.362 MIN.0.512 0.008±SYMBOL(mm)(inch)0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.1.00 0.10± 1.85 0.10± 4.00 0.10± 1.55 0.05±3.50 0.05±1.75 0.10±60.0 MIN.13.0 0.20±1.00 0.10± 4.00 0.10± 2.00 0.05±0.23 0.05±8.00 0.20±13.5 MAX.178 1±End W 1Reel Taping Specification0603(SOD-523F)0603(SOD-523F)Suggested PAD LayoutSIZE(inch)0.067(mm)1.700.600.800.0240.031Marking Code2.300.091E1.100.043Standard PackageA B C D Park Number CDBU0230-HFMarking CodeB50603/SOD-523FCase Type Qty per Reel(Pcs)40000603/SOD-523FReel Size (inch)7分销商库存信息: COMCHIPCDBU0230-HF。
BUK9605-30A资料
Philips Semiconductors Product specificationTrenchMOS ™ transistor BUK9605-30ALogic level FETGENERAL DESCRIPTIONQUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETERMAX.UNIT level field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source voltage 30V ing ’trench ’technology I D Drain current (DC)75A the device features very low on-state P tot Total power dissipation 230W resistance.It is intended for use in T jJunction temperature 175˚C automotive and general purpose R DS(ON)Drain-source on-state switching applications.resistance V GS = 5 V 5m Ω V GS = 10 V4.6m ΩPINNING - SOT404PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETERCONDITIONS MIN.MAX.UNIT V DS Drain-source voltage --30V V DGR Drain-gate voltage R GS = 20 k Ω-30V ±V GS Gate-source voltage--10V ±V GSM Non-repetitive gate-source voltage t p ≤50µS -15V I D Drain current (DC)T mb = 25 ˚C -75A I D Drain current (DC)T mb = 100 ˚C -75A I DM Drain current (pulse peak value)T mb = 25 ˚C -400A P totTotal power dissipationT mb = 25 ˚C -230W T stg , T jStorage & operating temperature-- 55175˚CTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONS TYP.MAX.UNIT R th j-mb Thermal resistance junction to --0.65K/W mounting baseR th j-aThermal resistance junction to Minimum footprint, FR450-K/WambientboardPhilips Semiconductors Product specification TrenchMOS™ transistor BUK9605-30A Logic level FETSTATIC CHARACTERISTICSTj= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITV(BR)DSS Drain-source breakdown VGS= 0 V; ID= 0.25 mA;30--Vvoltage Tj= -55˚C27--VVGS(TO)Gate threshold voltage VDS= VGS; ID= 1 mA1 1.5 2.0VTj= 175˚C0.5--VTj= -55˚C-- 2.3VI DSS Zero gate voltage drain current VDS= 30 V; VGS= 0 V;-0.0510µATj= 175˚C--500µAI GSS Gate source leakage current VGS= ±10 V; VDS= 0 V-2100nARDS(ON)Drain-source on-state VGS= 5 V; ID= 25 A- 4.35mΩresistance Tj= 175˚C--9.3mΩVGS= 10 V; ID= 25 A- 3.9 4.6mΩVGS= 4.5 V; ID= 25 A-- 5.4mΩDYNAMIC CHARACTERISTICSTmb= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITCiss Input capacitance VGS= 0 V; VDS= 25 V; f = 1 MHz-65008600pFCoss Output capacitance-15001800pFCrssFeedback capacitance-10001350pFtd on Turn-on delay time VDD= 30 V; Rload=1.2Ω;-4565nst r Turn-on rise time VGS= 5 V; RG= 10 Ω-220330nstd off Turn-off delay time-435600nstfTurn-off fall time-320450nsL d Internal drain inductance Measured from upper edge of drain- 2.5-nHtab to centre of dieL s Internal source inductance Measured from source lead-7.5-nHsoldering point to source bond padREVERSE DIODE LIMITING VALUES AND CHARACTERISTICSTj= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITI DR Continuous reverse drain--75A currentI DRM Pulsed reverse drain current--240AVSD Diode forward voltage IF= 25 A; VGS= 0 V-0.85 1.2VIF= 75 A; VGS= 0 V- 1.1-Vt rr Reverse recovery time IF= 75 A; -dIF/dt = 100 A/µs;-400-nsQrr Reverse recovery charge VGS= -10 V; VR= 30 V- 1.0-µCAVALANCHE LIMITING VALUESYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITWDSS Drain-source non-repetitive ID= 75 A; VDD≤ 25 V;--500mJ unclamped inductive turn-off VGS= 5 V; RGS= 50 Ω; Tmb= 25 ˚CenergyPhilips Semiconductors Product specificationTrenchMOS ™ transistor BUK9605-30ALogic level FETFig.3. Safe operating area. T mb = 25 ˚C I D & I DM = f(V DS ); I DM single pulse; parameter t p Fig.6. Typical on-state resistance, T j = 25 ˚C .R DS(ON) = f(I D ); parameter V GS02040608010034567891011RDS(ON)/mOhmID/AVGS/V =3.03.23.43.64.05.01101001101001000ID/ARDS(ON) = VDS/IDVDS/V tp =100mS10mS1mS 100uS DCPhilips Semiconductors Product specificationTrenchMOS ™ transistor BUK9605-30ALogic level FETFig.9. Typical transconductance, T j = 25 ˚C .g fs = f(I D ); conditions: V DS = 25 V Fig.12. Sub-threshold drain current.I D = f(V GS); conditions: T j = 25 ˚C; V DS = V GS02040608010050100150gfs/SID/A00.51 1.52 2.531E-051E-051E-041E-031E-021E-01Sub-Threshold Conduction2%typ 98%Philips Semiconductors Product specificationTrenchMOS ™ transistor BUK9605-30ALogic level FETFig.13. Typical capacitances, C iss , C oss , C rss .C = f(V DS ); conditions: V GS = 0 V; f = 1 MHzFig.16. Normalised avalanche energy rating.W DSS % = f(T mb ); conditions: I D = 75 A0.010.111010005101520T h o u s a n d s p FVDS/VCissCoss Crss 20406080100120140160180Tmb / C120 110 10090 80 7060 50 4030 20 10WDSS%Philips Semiconductors Product specification TrenchMOS™ transistor BUK9605-30A Logic level FETMECHANICAL DATA1. This product is supplied in anti-static packaging. The gate-source input must be protected against staticdischarge during transport or handling.2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.3. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification TrenchMOS™ transistor BUK9605-30A Logic level FETMOUNTING INSTRUCTIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。
FL-5305S-HF中文资料
*******************************************************************************************************************************************************OPTOWA Y TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 3031550 nm LASER DIODE MODULES FL-5300 SERIESUNCOOLED MQW-FP LD WITH PIGTAIL *******************************************************************************************************************************************************FEATURES² 1550 nm typical emission wavelength ² High reliability, long operation life² High temperature operation without active cooling ² Build-in InGaAs monitorAPPLICATIONTrunk Line, FitLDESCRIPTIONFL-5300 series are designed for coupling a single mode optical fiber with 1550 nm MQW-FP uncooled laser diode. FL-5300 series are the best kits as light sources for telecom and datacom applications.ELECTRICAL AND OPTICAL CHARACTERISTICS (T C =25 °C)Symbol ParameterTest ConditionsMin. Typ. Max. Unit I th Threshold Current CW12 15 mA V OP Operating V oltage CW, I F = I th +20mA 1.2 1.5 V P fOptical Output Power Part No:FL-530X FL-531X FL-532X FL-533X CW, I F = I th +20mA0.2 0.5 1.0 2.0 - - - - - - mWλc Center Wavelength CW, I th +20mA1520 1550 1580 nm Δλ Spectral Width CW, I th +20mA , RMS (σ) 3 nm t r , t f Rise And Fall Times I F =I th , I th +20mA, 10~ 90% 0.3 ns ΔP f / P f Tracking Error APC, -40~+85 ºC - - ±1.0 dB I m PD Monitor Current CW, I th +20mA,V RD =1V 100 μA I DPD Dark CurrentV RD =5V0.1μAC tPD CapacitanceV RD =5V , f=1MHz10 15 pFABSOLUTE MAXIMUM RATINGS (T C =25 ºC)Symbol ParameterRatings Unit P o Optical Output Power (530X/531X/532X/533X) 0.5/1.0/1.5/3mW V RL LD Reverse V oltage 2 V V RD PD Reverse V oltage 10 V I FD PD Forward Current 1.0 mA T opr Operating Temperature -40~+85 ºC T stgStorage Temperature-40~+85ºC*******************************************************************************************************************************************************OPTOWA Y TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303MECHANICAL DIMENSION (mm) and PIN ASSIGNMENTNote: Specifications subject to change without notice.ORDER INFORMATIONPart No.: F L − 5 3 □ □。
B0505产品规格书
认证
UL UL UL UL
UL CE UL CE UL CE UL CE UL UL UL UL UL CE UL CE UL CE UL CE
应用范围
A_S-1W & B_LS-1W 系列产品是专门针对
B0509LS-1W B0512LS-1W B0515LS-1W B0524LS-1W A1205S-1W A1209S-1W A1212S-1W A1215S-1W B1203LS-1W B1205LS-1W B1209LS-1W B1212LS-1W B1215LS-1W B1224LS-1W A1505S-1W A1512S-1W 12 10.8-13.2
对于实际输出功率小于 0.5W 之应用场合,建议 不外接电容。
A_S-1W & B_LS-1W
A/3-2010
第 2 页 共 3 页
外形尺寸、建议印刷板图、引脚方式
外观尺寸
19.60 [0.772]
建议印刷板图
正负双路 2.10 [0.083] ∅1.00 [0.039]
6.00 [0.236] 1 2 4 5 6 2.54 [0.100]
开关频率
100%负载，输入标称电压
Vin GND
单路
REG
REG
+Vo 0V
*纹波和噪声的测试方法采用平行线测试法。具体操作方法参见产品应用笔记之电源模块的测试。 注：正负双路输出模块的负载不平衡度:±5％。
DC DC
REG
-Vo +Vo
使用注意事项
① 输出负载要求 为了确保该模块能够高效可靠的工作，使用时，其输出最小负载不能小于额定 负载的 10%。若您所需功率确实较小，请在输出端并联一个电阻，建议阻值相当于 10%额定功率，或选用我司更小功率级别的产品（A_S –W25/B_LS-W25） 。 ② 过载保护 在通常工作条件下，该产品输出电路对于过载情况无保护功能。最简单的方法是在 输入端串接一个自恢复保险丝，或在电路中外加一个断路器。 ③ 推荐电路 若要求进一步减少输入输出纹波，可在输入输出端联接一个“LC”滤波网络， 应用电路如（图 1）所示。 但应注意电感值的选取及“LC”滤波网络其自身的频率应与 DC/DC 频率错开， 避免相互干扰。并选用合适的滤波电容。若电容太大，很可能会造成启动问题。对 于每一路输出，在确保安全可靠工作的条件下，并推荐容性负载值详见（表 1） 。 ④ 输出稳压及过压保护电路 对于输出稳压、 过压及过流保护的最简单的装置是在其输入或输出端串接一个 带过热保护的线性稳压器（见图 2） 。 ⑤ 此产品不能并联使用，不支持热插拔
B0530W-7-F;B0530W-7;中文规格书,Datasheet资料
Symbol V(BR)R VFM
IRM CT
Value 30
0.375 0.430
20 130
170
Unit V V
μA pF
Test Conditions IR = 130μA IF = 0.1A, TJ = 25°C IF = 0.5A, TJ = 25°C VR = 15V, TJ = 25°C VR = 30V, TJ = 25°C f = 1MHz, VR = 0V DC
"Green" Device (Notes 3 and 4)
B0530W
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Please click here to visit our online spice models database.
Mechanical Data
1 of 3
June 2008
© Diodes Incorporated
PD, POWER DISSIPATION (mW)
500 400
300 200
100
0 0
100,000
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating
V
Average Rectified Output Current
@ TL = 100°C
IO
0.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
Analog Devices ADRF5301 产品说明书
Data SheetADRF5301Silicon, SPDT Switch, 37 GHz to 49 GHz FEATURES►Reflective design►Low insertion loss: 1.4 dB typical►High isolation: 30 dB typical►High input linearity:►P0.1dB: 36 dBm►Input IP3: 52 dBm►High RF power handling►28 dBm average►36 dBm peak►Single-supply operation: 3.3V►Internal NVG►RF settling time (0.1 dB final RF output): 50 ns►20-terminal, 3 mm × 3 mm, land grid array (LGA) package APPLICATIONS►Industrial scanner►Test instrumentation►Cellular infrastructure mmWave 5G►Military radios, radars, electronic counter measures (ECMs)►Microwave radios and very small aperture terminals (VSATs)FUNCTIONAL BLOCK DIAGRAMFigure 1. Functional Block DiagramGENERAL DESCRIPTIONThe ADRF5301 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5301 was developed for 5G applications from 37 GHz to 49 GHz. This device has a low insertion loss of 1.4 dB, high isolation of 30 dB, and RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5301 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V applied to the VDD pin. The device employs complementary metal-oxide semiconduc-tor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-com-patible control.The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-com-pliant, land grid array package and can operate from −40°C to+105°C.TABLE OF CONTENTSFeatures (1)Applications (1)Functional Block Diagram (1)General Description (1)Specifications (3)Timing Specifications (3)Absolute Maximum Ratings (4)Thermal Resistance (4)Power Derating Curve (4)Electrostatic Discharge (ESD) Ratings (4)ESD Caution (4)Pin Configuration and Function Descriptions (5)Interface Schematics (5)Typical Performance Characteristics (6)Insertion Loss, Return Loss, and Isolation (6)Input Power Compression and Third-OrderIntercept (7)Theory of Operation (8)RF Input and Output (8)Power Supply (8)Timing Requirements (8)Applications Information (9)Recommendations for Printed Circuit BoardDesign (9)Outline Dimensions (10)Ordering Guide (10)Evaluation Boards (10)REVISION HISTORY10/2022—Revision 0: Initial VersionSPECIFICATIONSSupply voltage (V DD) = 3.3 V, CTRL voltage (V CTRL) = 0 V or V DD, T CASE = +25°C, 50 Ω system, unless otherwise noted.Table 1. Electrical CharacteristicsParameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE3749GHz INSERTION LOSSBetween RFC and RF1/RF2 1.4dB ISOLATIONBetween RFC and RF1/RF230dB Between RF1 and RF230dB RETURN LOSSRFC and RF1/RF2 (On)15dB SWITCHING CHARACTERISTICSRise and Fall Time t RISE, t FALL10% to 90% of RF output10ns On and Off Time t ON, t OFF50% V CTL to 90% of RF output45ns RF Settling Time0.1 dB50% V CTL to 0.1 dB of final RF output50ns0.05 dB50% V CTL to 0.05 dB of final RF output55ns INPUT LINEARITY f = 37 GHz to 40 GHz0.1 dB Power Compression P0.1dB36dBm Third-Order Intercept IP3Two-tone input power = 20 dBm per tone, Δf = 1 MHz52dBm SUPPLY CURRENT I DD450µA DIGITAL CONTROL INPUTS CTRL pinVoltageLow V INL00.8V High V INH 1.2 3.3V CurrentLow I INL<1μA High I INH14µA RECOMMENDED OPERATING CONDITONSSupply Voltage V DD 3.15 3.45V Digital Control Voltage V CTRL0V DD V RF Input Power1P IN f = 37 GHz to 40 GHz, T CASE = +85 °C2Average28dBm Peak100 ns pulse width, 2% duty cycle 36dBm Case Temperature T CASE−40+105°C1For power derating over frequency, see Figure 2.2For operation at +105°C, the power handling degrades from the T CASE = +85°C specification by 3 dB.TIMING SPECIFICATIONSSee Figure 13 for the timing diagram.Table 2. Timing SpecificationsParameter Description Min Typ Max Unitt POWERUP1Minimum wait time after power-up50μst HOLD Minimum control switching time40μst SLEW Maximum control rise and fall time10μs1 A maximum of 10 dBm RF input power can be applied during the t POWERUP wait time.ABSOLUTE MAXIMUM RATINGSFor recommended operating conditions, see Table 1.Table 3. Absolute Maximum RatingsParameter RatingSupply Voltage−0.3 V to +3.6 V Digital Control Input VoltageVoltage−0.3 V to VDD + 0.3 V Current 3 mARF Input Power (V DD = 3.3 V, f = 37 GHz to 40 GHz atT CASE = 85°C)Average28.5 dBmPeak36.5 dBmRF Input Power Under Unbiased Condition (V DD = 0 V)Average28 dBmPeak36 dBm TemperatureJunction (T J)135°CStorage−65°C to +150°C Reflow260°CStresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operat-ing conditions for extended periods may affect product reliability. THERMAL RESISTANCEThermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.θJC is the junction-to-case bottom (channel-to-package bottom) thermal resistance.Table 4. Thermal ResistancePackage TypeθJC1UnitCC-20-17, Through Path235°C/W1θJC was determined by simulation under the following conditions: the heat transfer is due solely to the thermal conduction from the channel through the ground pad to the PCB, and the ground pad is held constant at the operating temperature of +85°C.POWER DERATING CURVEFigure 2. Power Derating vs. Frequency, T CASE = +85°C ELECTROSTATIC DISCHARGE (ESD) RATINGSThe following ESD information is provided for handling of ESD-sen-sitive devices in an ESD protected area only.Human body model (HBM) ratings are per ANSI/ESDA/JEDECJS-001.Charged device model (CDM) ratings are per ANSI/ESDA/JEDEC JS-002.ESD Ratings for ADRF5301Table 5. ADRF5301, 20-Terminal LGAESD Model Withstand Threshold (V)HBM±500 for RF Pins±2000 for Supply and Digital Control Pins CDM±1250 for all PinsESD CAUTIONPIN CONFIGURATION AND FUNCTION DESCRIPTIONSFigure 3. Pin Configuration (Top View)Table 6. Pin Function Descriptions Pin No.Mnemonic Description1, 2, 4 to 7, 9 to 11, 13, 15 to 17, 19, 20GND Ground. These pins must be connected to the RF and DC ground of the PCB. See Figure 6 for the interface schematic.3RFCRF Common Port. This pin is DC-coupled to 0 V and AC matched to 50 Ω. No DC blocking capacitor is required when the RF line potential is equal to 0 V DC. See Figure 4 for the interface schematic.8RF1RF Throw Port 1. This pin is DC-coupled to 0 V and AC matched to 50 Ω. No DC blockingcapacitor is required when the RF line potential is equal to 0 V DC. See Figure 4 for the interface schematic.12VDD Positive Supply Voltage Input. See Figure 6 for the interface schematic.14CTRL Control Voltage Input. See Figure 5 for the interface schematic.18RF2RF Throw Port 2. This pin is DC-coupled to 0 V and AC matched to 50 Ω. No DC blockingcapacitor is required when the RF line potential is equal to 0 V DC. See Figure 4 for the interface schematic.EPADExposed Pad. The exposed pad must be connected to the RF and DC ground of the PCB.INTERFACE SCHEMATICSFigure 4. RFC, RF1, and RF2 Pins Interface SchematicFigure 5. CTRL Pin Interface SchematicFigure 6. VDD Pin and GND Pin Interface SchematicINSERTION LOSS, RETURN LOSS, AND ISOLATIONV DD = 3.3 V, V CTRL = 0 V or V DD , T CASE = 25°C, 50 Ω system, unless otherwise noted. Measured on the ADRF5301-EVALZevaluation board.Figure 7. Insertion Loss vs. FrequencyFigure 8. Return Loss vs. FrequencyFigure 9. Insertion Loss vs. Frequency Over TemperatureFigure 10. Isolation vs. FrequencyINPUT POWER COMPRESSION AND THIRD-ORDER INTERCEPTV DD = 3.3 V, V CTRL = 0 V or V DD, T CASE = 25°C, 50 Ω system, unless otherwise noted. All of the large signal performance parameters are measured on the ADRF5301-EVALZ evaluation board.Figure 11. Input P0.1dB vs. Frequency Figure 12. Input IP3 vs. FrequencyTHEORY OF OPERATIONThe ADRF5301 integrates a driver to perform logic functions inter-nally and to provide the user with the advantage of a simplified control interface. The driver features a single digital control input pin, CTRL, which controls the state of the RF paths. The logic level applied to the CTRL pin determines which RF port is in the insertion loss state while the other path is in the isolation state (see Table 7). RF INPUT AND OUTPUTAll of the RF ports (RFC, RF1, and RF2) are DC-coupled to 0 V, and no DC blocking is required at the RF ports when the RF line potential is equal to 0 V.The RF ports are internally matched to 50 Ω. Therefore, external matching networks are not required.The ADRF5301 is bidirectional with equal power handling capabili-ties. The RF input signal can be applied to the RFC port or the selected RF throw port.The insertion loss path conducts the RF signal between the select-ed RF throw port and the RF common port. The isolation paths provide high loss between the insertion loss path and the unselect-ed RF throw port that is reflective.POWER SUPPLYThe ADRF5301 integrates a negative voltage generator (NVG) and requires a single positive supply voltage applied to the VDD pin. Bypassing capacitors are recommended on the supply line to minimize RF coupling.The ideal power-up sequence is as follows:1.Connect GND reference.2.Power-up supply input VDD.3.Apply digital control input CTRL. Applying the CTRL controlbefore applying the VDD supply inadvertently forward biases and damages the internal ESD protection structures. To avoid this damage, use a series 1 kΩ resistor to limit the currentflowing into the control pin. Use pull-up or pull-down resistors if the controller output is in a high-impedance state after VDD is powered up and the control pins are not driven to a valid logic state.4.Apply RF input signal.The ideal power-down sequence is the reverse order of the power-up sequence.TIMING REQUIREMENTSThere are timing requirements for the proper operation of the bias and control circuits. See Table 2 for the timing specifications. See Figure 13 for the timing requirements.After VDD reaches the operating range, t POWERUP defines the wait time before the recommended maximum RF power can be applied. During this time, a maximum of 10 dBm RF input power can be applied.The minimum wait time before switching states is defined by t HOLD. The maximum rise and fall time of the CTRL pulse is defined byt SLEW.Figure 13. Timing RequirementsTable 7. Control Voltage Truth TableDigital Control Input RF PathsCTRL RF1 to RFC RF2 to RFC High Insertion loss (on)Isolation (off) Low Isolation (off)Insertion loss (on)APPLICATIONS INFORMATIONThe ADRF5301 has one power supply pin (VDD) and one con-trol pin (CTRL). Figure 14 shows the external components and connections for the supply pin. The VDD pin is decoupled with a 100pF multilayer ceramic capacitor. The device pin-out allows the placement of the decoupling capacitors close to the device.No other external components are needed for bias and operation,except DC blocking capacitors on the RF pins when the RF lines are biased at a voltage different than 0 V. See the Pin Configuration and Function Descriptionssection for details.Figure 14. Recommended SchematicRECOMMENDATIONS FOR PRINTED CIRCUIT BOARD DESIGNThe RF ports are matched to 50 Ω internally and the pinout isdesigned to mate a coplanar waveguide (CPWG) with 50 Ω charac-teristic impedance on the PCB. Figure 15 shows the referenced CPWG RF trace design for an RF substrate with 8 mil thick Rogers RO4003 dielectric material. RF trace with 14mil width and 7 milclearance is recommended for 2.2 mil finished copper thickness.Figure 15. Example PCB Stack-UpFigure 16 shows the routing of the RF traces, supply, and control signals from the device. The ground planes are connected with as many filled, through vias as allowed for optimal RF, and thermal performance. The primary thermal path for the device is the bottomside.Figure 16. PCB RoutingsFigure 17 shows the recommended layout from the device RF pins to the 50 Ω CPWG on the referenced stack-up. PCB pads are drawn 1:1 to device pads. The ground pads are drawn soldermask defined and the signal pads are drawn as pad defined. The RF trace from the PCB pad is extended with the same width by 2 mils and tapered to RF trace with a 45° angle. The paste mask is also designed to match the pad without any aperture reduction. Thepaste is divided into multiple openings for the paddle.Figure 17. Recommended RF Pin TransitionsFor alternate PCB stack-ups with different dielectric thickness and CPWG design, contact Analog Devices, Inc., Technical Support Request for further recommendations.OUTLINE DIMENSIONSFigure 18. 20-Terminal Land Grid Array [LGA]3 mm × 3 mm Body and 0.75 mm Package Height (CC-20-17)Dimensions Shown in MillimetersORDERING GUIDEModel1Temperature Range Package Description Package Option Marking Code ADRF5301BCCZN−40°C to +105°C20-Terminal Land Grid Array [LGA]CC-20-17S52ADRF5301BCCZN-RL−40°C to +105°C20-Terminal Land Grid Array [LGA]CC-20-17S52ADRF5301BCCZN-R7−40°C to +105°C20-Terminal Land Grid Array [LGA]CC-20-17S521Z = RoHS-Compliant Part.EVALUATION BOARDSTable 8. Evaluation BoardsModels1DescriptionADRF5301-EVALZ ADRF5301 Evaluation Board1Z = RoHS-Compliant Part.。
数字调功器减少能源损耗
使用Spang 853型数字式可功硅功率控制器有 效 减 少 制 造 过 程 中 的 电 能 消 耗在美国，数字式可控硅调功器的广泛使用，为工业加热领域的用户节省了大量电能费用，这些对数字化设备的投资所增加的费用可以在一到两个月的运行中所节省的电费中收回。
这里的例子是，数字式可控硅功率控制技术成功地在玻璃镀膜这类深加工项目中得到使用。
在一个由两台新电炉组成的镀膜玻璃设备的扩建项目中使用了数字化技术，直接导致每月电费成本节省超过2000美元。
数字式可控硅功率控制器使用过零控制模式带变压器从而驱动加热元件。
传统设计中为了避免因为变压器的磁饱和损坏变压器，只能使用移相控制模式为加热元件供电。
背景说明Signature 真空系统公司得到的一个合同中，要为用户的扩建工程项目建造两台真空电炉。
为了最大限度地节约电能，Signature 真空系统公司决定采用过零触发的功率控制器来控制电炉的热量输入。
控制器选择了世邦电力电子公司制造的853型三相数字式交流功率控制器 (见Fig.1).选择Spang 公司的853型数字式功率控制器的原因之一是它能够任意选择使用移相点火或过零点火模式以及自动组合峰值功率优化。
这样的选择可以保证在开始时使用（传统的）移相点火方式，以后再改为过零点火方式工作。
这种灵活性让我们很容易对不同的控制模式产生的系统电气参数和最终的电费进行对比。
用户已经习惯了过去的移相控制的系统。
采用多模式的853型数字式功率控制器，电炉控制系统允许操作人员使用习惯的移相控制模式，也可以任意切换到过零点火控制模式。
这种转换可以通过Modbus 串行接口的本地控制器或在控制室中通过总线连接的软件实现。
这中灵活性让电炉操作人员能够读取移相控制模式下的电流，电压值，然后再切换到过零控制模式，看到减小了的电流，电压值，充分理解节能的效果。
电炉加热区的额定规格如下:• 输入电压: 480 V AC• 输出电压: 45 V AC• 输出电流: 2,566 A AC• 额定功率: 200kW 使用镍鉻合金加热元件 三套加热系统的 交流动力中心图1. Spang 853系列数字式可控硅调功器每台电炉包括两套200KW 的加热回路，两台电炉共4套加热系统合计总功率800 kW. 电炉运行时，大多数运行时间的实际功率消耗约为额定功率的50%. 这种电炉每个加热区使用一个独立的动力系统。
IRF5305PBF;中文规格书,Datasheet资料
IRF5305PbFHEXFET ® Power MOSFETPD - 94788Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, VGS @ -10V -31I D@ T C = 100°C Continuous Drain Current, V GS @ -10V -22A I DMPulsed Drain Current -110P D @T C = 25°C Power Dissipation 110W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 280mJ I AR Avalanche Current-16A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.4R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/WR θJAJunction-to-Ambient–––62Thermal ResistanceAdvanced Process Technology Dynamic dv/dt Rating175°C Operating Temperature Fast Switching P-ChannelFully Avalanche RatedLead-FreeDescription10/31/03IRF5305PbFElectrical Characteristics @ T = 25°C (unless otherwise specified)Repetitive rating; pulse width limited bymax. junction temperature. ( See fig. 11 )I SD ≤ -16A, di/dt ≤ -280A/µs, V DD ≤ V (BR)DSS ,T J ≤ 175°CNotes:V DD = -25V, starting T J = 25°C, L = 2.1mHR G = 25Ω, I AS = -16A. (See Figure 12)Pulse width ≤ 300µs; duty cycle ≤ 2%.IRF5305PbF 3Fig 4. Normalized On-ResistanceVs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics11010010000.1110100D DS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)11010010000.1110100D DS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)11010045678910GS-V , Gate-to-Source Voltage (V)D-I , D r a i n -t o -S o u r c e C u r r e n t (A )0.00.51.01.52.0-60-40-2020406080100120140160180JT , Junction Temperature (°C)R , D r a i n -t o -S o u r c e O n R e s i s t a n c e D S (o n)(N o r m a l i z e d )IRF5305PbFFig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage05001000150020002500110100C , C a p a c i t a n c e (p F )DS-V , Drain-to-Source Voltage (V)048121620102030405060Q , Total Gate Charge (nC)GG S-V , G a t e -t o -S o u r c e V o l t a g e (V )1010010000.40.81.21.62.0SD S D -I , R e v e r s e D r a i n C u r r e n t (A )-V , Source-to-Drain Voltage (V)1101001000110100DS-V , Drain-to-Source Voltage (V)D -I , D r a i n C u r r e n t (A )IRF5305PbF 5Fig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig 9. Maximum Drain Current Vs.Case TemperatureR V DDV DSVIRF5305PbF6Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge WaveformFig 12c. Maximum Avalanche EnergyVs. Drain CurrentV-10VDSCurrent Sampling Resistors100200300400500600700255075100125150175JE , S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )AS Starting T , Junction Temperature (°C)Fig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test CircuitI ASV DDIRF5305PbF 7Peak Diode Recovery dv/dt Test CircuitV DD* Reverse Polarity for P-Channel** Use P-Channel Driver for P-Channel Measurements*V GS **** V GS = 5.0V for Logic Level and 3V Drive DevicesFig 14. For P-Channel HEXFETSIRF5305PbF233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .10/03TO-220AB Package OutlineNote: For the most current drawings please refer to the IR website at:/package/分销商库存信息: IRIRF5305PBF。
SVD501DEAG 说明书 - 30mA、600V N沟道耗尽型场效应管
SVD501DEAG 说明书30mA 、600V N 沟道耗尽型场效应管描述SVD501DEAG N 沟道耗尽型高压功率MOS 场效应晶体管，采用士兰微电子的平面高压VDMOS 工艺技术制造。
先进的工艺及原胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。
该产品可广泛应用于电子镇流器，低功率开关电源。
特点♦ 30mA ，600V ♦ 耗尽型（常开器件） ♦ 提升了ESD 能力 ♦开关速度快♦提升了dv/dt 能力命名规则产品规格分类产品名称 封装形式 打印名称 环保等级 包装 SVD501DEAGTRSOT-23501DE无卤编带极限参数参数名称符号参数范围单位漏源电压V DS600 V 栅源电压V GS±20 V漏极电流T C=25°CI D0.03A T C=70°C 0.024漏极冲击电流I DM0.12 A耗散功率（T C=25°C）-大于25°C每摄氏度减少P D0.8 W0.007 W/°C工作结温范围T J-55～+150 °C 贮存温度范围T stg-55～+150 °C热阻特性参数名称符号参数范围单位芯片对管壳热阻RθJC150 °C/W 芯片对环境的热阻RθJA250 °C/W 电性参数(除非特殊说明，TC=25°C)参数名称符号测试条件最小值典型值最大值单位漏源击穿电压BV DSS V GS=-5V，I D=250µA 600 -- -- V 漏源漏电流I D(off)V DS=600V，V GS=-5V -- -- 0.1 µA 栅源漏电流I GSS V GS=±20V，V DS=0V -- -- ±10 µA 栅极阈值电压V GS(th)V DS=3V，I D=8µA -2.7 -- -1.0 V 导通漏极电流I DSS V GS=0V，V DS=25V 12 -- -- mA导通电阻R DS(on)V GS=0V，I D=3mA -- 310 700ΩV GS=10V，I D=16mA -- 330 700输入电容C issV DS=25V，V GS=-5V，f=1.0MHZ -- 10.03pF输出电容C oss-- 2.92 反向传输电容C rss-- 0.12开启延迟时间t d(on)V DD=300V，I D=0.01AV GS=-5~7VR G=6Ω(注1,2) -- 12.36ns开启上升时间t r-- 60.44 关断延迟时间t d(off)-- 25.48 关断下降时间t f-- 100栅极电荷量Q g V DS=400V，I D=0.01AV GS=-5~7V(注1,2) -- 2.75nC栅极-源极电荷量Q gs-- 0.55 栅极-漏极电荷量Q gd-- 1.61源-漏二极管特性参数参数名称符号测试条件最小值典型值最大值单位源极电流I S MOS管中源极、漏极构成的反偏P-N结-- -- 0.03A源极脉冲电流I SM-- -- 0.12源-漏二极管压降V SD I F=16mA，V GS=-5V -- -- 1.2 V反向恢复时间T rr I F=0.01A，V R=300V，dI F/dt=100A/µs -- -- 367 ns反向恢复电荷Q rr-- -- 963 nC 注：1. 脉冲测试：脉冲宽度≤300μs，占空比≤2%；2. 基本不受工作温度的影响。
晶导微电子股份有限公司 MBR2040DT 和 MBR20200DT 漏电保护芯片说明书
SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 20 AMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specifiedFEATURES• • Low forward voltage drop• Low power loss, high efficiency • High surge capability• High temperature soldering guaranteed • Mounting position: anyHigh current capabilityMaximum DC Blocking VoltageCHARACTERISTICSMaximum Recurrent Peak Reverse VoltageMaximum RMS voltageMaximum Average Forward Rectified Current 45V 31.5V V 20-55 ~ +150AAV m A °C Units45Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max InstantaneousForward Voltage at 10 A DC per leg Maximum DC Reverse Current at Rated DC Reverse VoltageOperating Junction Temperature RangeMBR2040DT T = 25°C a T =125°Ca V RRM V RMS V DC I F(AV)I FSM V F I RT j TO-252T stgStorage Temperature Range6042601001000.700.750.90-55 ~ +150°C1501051502001402000.1201507045Typical Thermal Resistance°C/WR θJA Typical Junction Capacitance pFC j 600400（1）（2）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）（1）P.C.B. mounted with 10cmX10cmX1mm copper pad areas.TO-251402840MBR2040VT MBR2045DT MBR2045VT MBR2060DT MBR2060VT MBR20100DT MBR20100VT MBR20150DT MBR20150VT MBR20200DTMBR20200VT0.850.920.0520-55 ~ +175-55 ~ +175Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use.Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics.Important Notice and DisclaimerTO-251(I-PAK) mechanical dataTO-251(D-PAK) Package Outline DimensionsL1Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use.Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics.TO-252(D-PAK) Package Outline DimensionsL1TO-252(D-PAK) mechanical data。
FJD5304DTF;中文规格书,Datasheet资料
V BE(sat)Base-Emitter Saturation Voltage I C = 0.5A, I B = 0.1A 1.1VI C = 1.0A, I B = 0.2A 1.2VI C = 2.5A, I B = 0.5A 1.3Vt STG Storage Time VCLAMP=200V, I C=2.0A,I B1=0.4A, V BE(off)=-5V, L=200µH 0.6µst F Fall Time0.1µst STG Storage Time VCC=250V, I C=2.0A,I B1=0.4A, I B2=-0.4A, T P=30µs 2.9µst F Fall Time0.2µs V F Diode Forward Voltage I F = 2A 2.5VThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notAccuPower¥Auto-SPM¥Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥ESBC¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FPS¥F-PFS¥FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥OptoHiT™OPTOLOGIC®OPTOPLANAR®®PDP SPM™Power-SPM¥PowerTrench®PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET¥SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS®SyncFET¥Sync-Lock™®*The Power Franchise®TinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TriFault Detect¥TRUECURRENT¥*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息: FAIRCHILDFJD5304DTF。
UPD70F3025AGC-33-8EU-A, 规格书,Datasheet 资料
To our customers,Old Company Name in Catalogs and Other DocumentsOn April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.Renesas Electronics website: April 1st, 2010Renesas Electronics CorporationIssued by: Renesas Electronics Corporation ()Send any inquiries to /inquiry.Notice1. All information included in this document is current as of the date this document is issued. Such information, however, issubject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rightsof third parties by or arising from the use of Renesas Electronics products or technical information described in this document.No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others.3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation ofsemiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.5. When exporting the products or technology described in this document, you should comply with the applicable export controllaws and regulations and follow the procedures required by such laws and regulations. You should not use RenesasElectronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations.6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronicsdoes not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.7. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particularapplication. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwiseexpressly specified in a Renesas Electronics data sheets or data books, etc.“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support.“Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcareintervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges.9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products havespecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of aRenesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmentalcompatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of RenesasElectronics.12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in thisdocument or Renesas Electronics products, or if you have any other inquiries.(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.DATA SHEETThe mark shows major revised points.µPD70F3003A, Document No. U13189EJ5V1DS00 (5th edition)Date Published August 2005 N CP(K)Printed in JapanAPPLICATIONSµPD70F3003A, 70F3025A:Camcorders, VCRs, PPCs, LBPs, printers, motor controllers, NC machinetools, mobile telephones, etc.µPD70F3003A(A):Medical equipment, automotive appliances, etc.PIN CONFIGURATION (Top View)•100-Pin Plastic LQFP (fine pitch) (14 × 14)µPD70F3003AGC-33-8EUµPD70F3025AGC-33-8EUµPD70F3003AGC-33-8EU-AµPD70F3025AGC-33-8EU-AµPD70F3003AGC(A)-33-8EU2Data Sheet U13189EJ5V1DS3Data Sheet U13189EJ5V1DSP40 to P47:Port 4P50 to P57:Port 5P60 to P63:Port 6P70 to P77:Port 7P90 to P96:Port 9P110 to P117:Port 11PWM0, PWM1:Pulse width modulation RESET:ResetR/W:Read/write status RXD0, PXD1:Receive data SCK0 to SCK3:Serial clock SI0 to SI3:Serial input SO0 to SO3:Serial outputTO110, TO111,TO120, TO121,TO130, TO131,TO140, TO141:Timer output TCLR11 to TCLR14:Timer clearTI11 to TI14:Timer input TXD0, TXD1:Transmit data UBEN:Upper byte enable WAIT:Wait X1, X2:Crystal V DD :Power supplyV PP :Programming power supply V SS :GroundPIN NAMES A16 to A19:Address bus AD0 to AD15:Address/data bus ADTRG:A/D Trigger input ANI0 to ANI7:Analog input ANO0, ANO1:Analog output ASTB:Address strobe AV DD :Analog V DDAV REF1 to AV REF3:Analog reference voltage AV SS :Analog V SSCV DD :Power supply for clock generator CV SS :Ground for clock generator CKSEL:Clock select CLKOUT :Clock output DSTB:Data strobe HLDAK:Hold acknowledge HLDRQ:Hold requestINTP110 to INTP113,INTP120 to INTP123,INTP130 to INTP133,INTP140 to INTP143:Interrupt request from peripherals LBEN:Lower byte enable MODE:ModeNMI:Non-maskable interrupt request P00 to P07:Port 0P10 to P17:Port 1P20 to P27:Port 2P30 to P37:Port 3INTERNAL BLOCK DIAGRAM4Data Sheet U13189EJ5V1DSCONTENTS1.DIFFERENCES BETWEEN PRODUCTS (6)2.PIN FUNCTIONS (7)2.1Port Pins (7)2.2Non-Port Pins (9)2.3Pin I/O Circuits and Recommended Connection of Unused Pins (11)3. ELECTRICAL SPECIFICATIONS (14)3.1Normal Operation Mode (14)3.2Flash Memory Programming Mode (37)4.PACKAGE DRAWING (40)5.RECOMMENDED SOLDERING CONDITIONS (41)APPENDIX NOTES ON TARGET SYSTEM DESIGN (43)5Data Sheet U13189EJ5V1DS1. DIFFERENCES BETWEEN PRODUCTSItem µPD703003AµPD703004AµPD703025AµPD703003A(A)µPD703025A(A)µPD70F3003AµPD70F3025AµPD70F3003A(A) Internal ROM Mask ROM Flash memory128 KB96 KB 256 KB128 KB 256 KB128 KB 256 KB128 KB Internal RAM 4 KB 8 KB 4 KB 8 KB 4 KB 8 KB 4 KBFlash memory None Providedprogramming modeV PP pin None ProvidedQuality grade Standard Special Standard Special Electrical specifications Current consumption, etc. differs. (Refer to each product data sheets).Others Noise immunity and noise radiation differ because circuit scale and mask layout differ.Caution There are differences in noise immunity and noise radiation between the flash memory version and mask ROM version. When pre-producing an application set with the flash memory version and then mass-producing it with the mask ROM version, be sure to conduct sufficient evaluation for commercial samples (not engineering samples) of the mask ROM version.6Data Sheet U13189EJ5V1DS2. PIN FUNCTIONS2.1 Port Pins(1/2) Pin Name I/O Function Alternate Function P00I/O Port 0TO110P018-bit I/O port.TO111P02Input/output can be specified in 1-bit units.TCLR11P03TI11P04INTP110P05INTP111P06INTP112P07INTP113/ADTRGP10I/O Port 1TO120P118-bit I/O port.TO121P12Input/output can be specified in 1-bit units.TCLR12P13TI12P14INTP120P15INTP121/SO2P16INTP122/SI2P17I NTP123/SCK2P20I/O Port 2PWM0P218-bit I/O port.PWM1P22Input/output can be specified in 1-bit units.TXD0/SO0P23RXD0/SI0P24SCK0P25TXD1/SO1P26RXD1/SI1P27SCK1P30I/O Port 3TO130P318-bit I/O port.TO131P32Input/output can be specified in 1-bit units.TCLR13P33TI13P34INTP130P35INTP131/SO3P36INTP132/SI3P37I NTP133/SCK3P40 to P47I/O Port 4AD0 to AD78-bit I/O port.Input/output can be specified in 1-bit units.P50 to P57I/O Port 5AD8 to AD158-bit I/O port.Input/output can be specified in 1-bit units.7Data Sheet U13189EJ5V1DS(2/2) Pin Name I/O Function Alternate Function P60 to P63I/O Port 6A16 to A194-bit I/O port.Input/output can be specified in 1-bit units.P70 to P77Input Port 7ANI0 to ANI78-bit input port.P90I/O Port 9LBENP917-bit I/O port.UBENP92Input/output can be specified in 1-bit units.R/WP93DSTBP94ASTBP95HLDAKP96HLDRQP110I/O Port 11TO140P1118-bit I/O port.TO141P112Input/output can be specified in 1-bit units.TCLR14P113TI14P114INTP140P115INTP141P116INTP142P117INTP1438Data Sheet U13189EJ5V1DS2.2 Non-Port Pins(1/2) Pin Name I/O Function Alternate Function TO110Output Pulse signal output from timers 11 to 14P00TO111P01TO120P10TO121P11TO130P30TO131P31TO140P110TO141P111TCLR11Input External clear signal input for timers 11 to 14P02TCLR12P12TCLR13P32TCLR14P112TI11Input External count clock input for timers 11 to 14P03TI12P13TI13P33TI14P113INTP110Input External maskable interrupt request input and external capture P04INTP111trigger input for timer 11P05INTP112P06INTP113P07/ADTRG INTP120Input External maskable interrupt request input and external capture P14INTP121trigger input for timer 12P15/SO2INTP122P16/S12INTP123P17/SCK2INTP130Input External maskable interrupt request input and external capture P34INTP131trigger input for timer 13P35/SO3INTP132P36/SI3INTP133P37/SCK3INTP140Input External maskable interrupt request input and external capture P114INTP141trigger input for timer 14P115INTP142P116INTP143P117SO0Output Serial transmit data output for CSI0 to CSI3 (3-wire)P22/TXD0SO1P25/TXD1SO2P15/INTP121 SO3P35/INTP131SI0Input Serial receive data output for CSI0 to CSI3 (3-wire)P23/RXD0SI1P26/RXD1SI2P16/INTP122SI3P36/INTP132(2/2) Pin Name I/O Function Alternate Function SCK0I/O Serial clock I/O for CSI0 to CSI3 (3-wire)P24SCK1P27SCK2P17/INTP123 SCK3P37/INTP133 TXD0Output Serial transmit data output of UART0 to UART1P22/SO0TXD1P25/SO1RXD0Input Serial receive data input of UART0 to UART1P23/SI0RXD1P26/SI1PWM0Output Pulse signal output of PWM P20PWM1P21AD0 to AD7I/O16-bit multiplexed address/data bus when external memory is connected P40 to P47AD8 to AD15P50 to P57A16 to A19Output Higher address bus when external memory is connected P60 to P63 LBEN Output Lower byte enable signal output of external data bus P90UBEN Higher byte enable signal output of external data bus P91R/W Output External read/write status output P92DSTB External data strobe signal output P93ASTB External address strobe signal output P94HLDAK Output Bus hold acknowledge output P95HLDRQ Input Bus hold request input P96ANI0 to ANI7Input Analog input to A/D converter P70 to P77ANO0, ANO1Output Analog output of D/A converter—NMI Input Non-maskable interrupt request input—CLKOUT Output System clock output—CKSEL Input Input specifying operation mode of clock generator CV DDWAIT Input Control signal input inserting wait state in bus cycle—MODE Input Operation mode specification—RESET Input System reset input—X1Input System clock resonator connection. Input external clock to X1 to—X2—supply external clock.—ADTRG Input A/D converter external trigger input P07/INTP113AV REF1Input Reference voltage input for A/D converter—AV REF2Input Reference voltage input for D/A converter—AV REF3—AV DD—Positive power supply for A/D converter—AV SS—Ground potential for A/D converter—CV DD—Positive power supply for internal clock generator CKSELCV SS—Ground potential for internal clock generator—V DD—Positive power supply—V SS—Ground potential—V PP—High voltage application pin when program is written/verified—2.3 Pin I/O Circuits and Recommended Connection of Unused PinsTable 2-1 shows the I/O circuit type of each pin, and the recommended connections of the unused pins. Figure 2-1 shows a partially simplified diagram of each circuit.It is recommended that 1 to 10 kΩ resistors be used when connecting to V DD or V SS via a resistor.Table 2-1. Types of Pin I/O Circuits and Recommended Connections of Unused Pins (1/2)Pin Name I/O Circuit Type Recommended Connection of Unused PinsP00/TO110, P01/TO1115Input:Independently connect to V DD or V SS via a resistor.P02/TCLR11, P03/TI11,8Output:Leave open.P04/INTP110 to P07/INTP113/ADTRGP10 to TO120, P11/TO1215P12/TCLR12, P13/TI128P14/INTP120P15/INTP121/SO2P16/INTP122/SI2P17/INTP123/SCK2P20/PWM0, P21/PWM15P22/TXD0/SO0P23/RXD0/SI0, P24/SCK08P25/TXD1/SO15P26/RXD1/SI1, P27/SCK18P30/TO130, P31/TO1315P32/TCLR13, P33/TI138P34/INTP130P35/INTP131/SO310-AP36/INTP132/SI3P37/INTP133/SCK3P40/AD0 to P47/AD75P50/AD8 to P57/AD15P60/A16 to P63/A19P70/ANI0 to P77/ANI79Directly connect to V SS.P90/LBEN5Input:Independently connect to V DD or V SS via a resistor.P91/UBEN Output:Leave open.P92/R/WP93/DSTBP94/ASTBP95/HLDAKP96/HLDRQP110/TO140, P111/TO141P112/TCLR14, P113/TI148P114/INTP140 to P117/INTP143Table 2-1. Types of Pin I/O Circuits and Recommended Connection of Unused Pins (2/2)Pin Name I/O Circuit Type Recommended Connection of Unused Pins ANO0, ANO112Leave open.NMI2Directly connect to V SS.CLKOUT3Leave open.WAIT1Directly connect to V DD.MODE2—RESETCV DD/CKSEL—AV REF1 to AV REF3, AV SS—Directly connect to V SS.AV DD—Directly connect to V DD.V PP—Connect to V SS.Figure 2-1. Pins I/O Circuits3. ELECTRICAL SPECIFICATIONS3.1 Normal Operation ModeAbsolute Maximum Ratings (T A = 25°C)Parameter Symbol Conditions Ratings Unit Supply voltage V DD V DD pin–0.5 to +7.0VCV DD CV DD pin–0.5 to V DD + 0.3Note 1VCV SS CV SS pin–0.5 to +0.5VAV DD AV DD pin–0.5 to V DD + 0.3Note 1VAV SS AV SS pin–0.5 to +0.5V Input voltage V I1Note 2, V DD = 5.0 V ±10%–0.5 to V DD + 0.3Note 1VV I2V PP pin in flash memory programming mode,–0.5 to +11.0VV DD = 5.0 V ±10%Clock input voltage V K X1 pin, V DD = 5.0 V ±10%–0.5 to V DD + 1.0Note 1V Output current, low I CL 1 pin 4.0mATotal of all pins100mA Output current, high I CH 1 pin–4.0mATotal of all pins–100mA Output voltage V O V DD = 5.0 V ±10%–0.5 to V DD + 0.3Note 1V Analog input voltage V IAN P70/ANI0 to P77/ANI7AV DD > V DD–0.5 to V DD + 0.3Note 1VV DD≥ AV DD–0.5 to AV DD + 0.3Note 1V Analog reference input voltage AV REF AV REF1 to AV REF3AV DD > V DD–0.5 to V DD + 0.3Note 1VV DD≥ AV DD–0.5 to AV DD + 0.3Note 1V Operating ambient temperature T A–40 to +85°C Storage temperature T stg–65 to +125°CNotes 1. Be sure not to exceed the absolute maximum ratings (MAX. value) of each supply voltage.2. X1, P70 to P77, AV REF1 to AV REF3, and their alternate-function pins are excluded.Cautions 1.Avoid direct connections among the IC device output (or I/O) pins and between V DD or V CC and GND. However, direct connections among open-drain and open-collector pins arepossible, as are direct connections to external circuits that have timing designed to preventoutput conflict with pins that become high-impedance.2.Product quality may suffer if the absolute maximum rating is exceeded even momentarily forany parameter. That is, the absolute maximum ratings are rated values at which the productis on the verge of suffering physical damage, and therefore the product must be used underconditions that ensure that the absolute maximum ratings are not exceeded.The normal operating ranges of ratings and conditions in which the quality of the productis guaranteed are specified in the following DC Characteristics and AC Characteristics.Capacitance (T A = 25°C, V DD = V SS = 0 V)Parameter Symbol Conditions MIN.TYP.MAX.Unit Input capacitance C I fc = 1 MHz15pFI/O capacitance C IO Pins other than tested pin: 0 V15pF Output capacitance C O15pFOperating ConditionsOperation Mode Internal System Clock Frequency (φ)Operating Temperature (T A)Supply Voltage (V DD)Direct mode, 2 to 33 MHz Note 1–40 to +85°C 5.0 V ±10%PLL mode5 to 33 MHz Note 2–40 to +85°C 5.0 V ±10%Notes1.When A/D converter not used.2.When A/D converter used.Recommended OscillatorCaution For the resonator selection and oscillator constant of the µPD70F3003A(A), customers are requested to apply to the resonator manufacturer for evaluation.(1)Ceramic resonator connection (T A = –40 to +85°C)(a)µPD70F3003A(b)µPD70F3025ADC Characteristics(T A = –40 to +85°C, V DD = 5.0 V ±10%, V SS = 0 V)(1/2) Parameter Symbol Conditions MIN.TYP.MAX.UnitInput voltage, high V IH Except X1 and Note 2.2V DD + 0.3VNote0.8V DD V DD + 0.3V Input voltage, low V IL Except X1 and Note–0.5+0.8VNote–0.50.2V DD V Clock input voltage, high V XH X10.8V DD V DD + 0.5V Clock input voltage, low V XL X1–0.50.6V Schmitt trigger input threshold voltage V T+Note, rising 3.0VV T–Note, falling 2.0V Schmitt trigger input hysteresis width V T+– V T–Note0.5V Output voltage, high V OH I OH = –2.5 mA0.7V DD VI OH = –100 µA V DD – 0.4V Output voltage, low V OL I OC = 2.5 mA0.45V Input leakage current, high I LIH V I = V DD10µA Input leakage current, low I LIL V I = 0 V–10µA Output leakage current, high I LOH V O = V DD10µA Output leakage current, low I LOL V O = 0 V–10µASoftware pull-up resistor R P35/INTP131/SO3,154090kΩP36/INTP132/SI3,P37/INTP133/SCK3Note P02 to P07, P12 to P17, P23, P24, P26, P27, P32 to P37, P112 to P117, RESET, NMI, MODE, and their alternate-function pins.Remark TYP. values are reference values for when T A = 25°C and V DD = 5.0 V.(2/2) Parameter Symbol Conditions MIN.TYP.MAX.Unit SupplyµPD70F3003A,Operating I DD1Direct mode 2.2 ×φ + 7.5 2.5 ×φ + 22mA current70F3003A(A)PLL mode 2.3 ×φ + 9.5 2.6 ×φ + 25mA In HALT mode I DD2Direct mode 1.2 ×φ + 7.5 1.3 ×φ + 15mAPLL mode 1.3 ×φ + 9.5 1.4 ×φ + 17mA In IDLE mode I DD3Direct mode8 ×φ + 30010 ×φ + 500µAPLL mode0.1 ×φ + 20.2 ×φ + 3mA In STOP mode I DD4CESEL = 0, Note 1250µACESEL = 0, Note 22200µACESEL = 1, Note 130200µACESEL = 1, Note 230500µA µPD70F3025A Operating I DD1Direct mode 2.5 ×φ + 8 2.8 ×φ + 22.5mAPLL mode 2.6 ×φ + 10 2.9 ×φ + 25.5mA In HALT mode I DD2Direct mode 1.3 ×φ + 7.5 1.4 ×φ + 15mAPLL mode 1.3 ×φ + 12.5 1.4 ×φ + 20mA In IDLE mode I DD3Direct mode8 ×φ + 30010 ×φ + 500µAPLL mode0.1 ×φ + 20.2 ×φ + 3mA In STOP mode I DD4CESEL = 0, Note 1250µACESEL = 0, Note 22200µACESEL = 1, Note 160300µACESEL = 1, Note 260500µANotes1.–40°C ≤ T A≤ +50°C2.50°C < T A≤ 85°CRemarks 1.TYP. values are reference values for when T A = 25°C (except for the conditions in Note 2) and V DD = 5.0 V. The power supply current does not include AV REF1 to AV REF3 or the current that flows throughsoftware pull-up resistors.2.φ: Internal system clock frequencyData Retention Characteristics (T A = –40 to +85°C, V DD = V DDDR)Parameter Symbol Conditions MIN.TYP.MAX.UnitData hold voltage V DDDR STOP mode 1.5 5.5V Data hold current I DDDRµPD70F3003A,CESEL = 0, Note 10.4V DDDR50µA70F3003A(A)CESEL = 0, Note 20.4V DDDR200µACESEL = 1, Note 16V DDDR200µACESEL = 1, Note 26V DDDR500µAµPD70F3025A CESEL = 0, Note 10.4V DDDR50µACESEL = 0, Note 20.4V DDDR200µACESEL = 1, Note 112V DDDR300µACESEL = 1, Note 212V DDDR500µA Supply voltage rise time t RVD200µs Supply voltage fall time t FVD200µsSupply voltage hold time t HVD0ms (vs. STOP mode setting)STOP mode release signal input time t DREL0ns Data hold input voltage, high V IHDR Note 30.9V DDDR V DDDR V Data hold input voltage, low V ILDR Note 300.1V DDDR VNotes1.–40°C ≤ T A≤ +50°C2.50°C <T A≤ 85°C3.P02 to P07, P12 to P17, P23, P24, P26, P27, P32 to P37, P112 to P117, RESET, NMI, MODE, X1, andtheir alternate-function pins.Remark TYP. values are reference values for when T A = 25°C (except for the conditions in Note 2) and V DD =5.0 V.AC Characteristics (T A = –40 to +85°C, V DD = 5.0 V ±10%, V SS = 0 V)AC test input test points(a)P02 to P07, P12 to P17, P23, P24, P26, P27, P32 to P37, P112 to P117, RESET, NMI, MODE, X1, andtheir alternate-function pins(1)Clock timingParameterSymbol Conditions MIN.MAX.Unit X1 input cycle<1>t CYXDirect mode15Note 1ns PLL mode 151Note 2 Note 3ns (PLL lock status)X1 input width, high<2>t WXHDirect mode 6ns PLL mode60ns X1 input width, low<3>t WXLDirect mode 6ns PLL mode60nsX1 input rise time<4>t XRDirect mode 7ns PLL mode10ns X1 input fall time<5>t XFDirect mode 7ns PLL mode10ns CPU operating frequency —φ Note 4 33MHz CLKOUT output cycle <6>t CYK 30 Note 5ns CLKOUT width, high <7>t WKH 0.5 T – 5ns CLKOUT width, low <8>t WKL 0.5 T – 5ns CLKOUT rise time <9>t XR 5ns CLKOUT fall time<10>t XF 5ns X1 ↓→ CLKOUT delay time<11>t DXKDirect mode317nsNotes 1.When A/D converter used: 100 nsWhen A/D converter not used: 250 ns2.When using A/D converter: The value when φ = 5 × f XX and φ = f XX are set. Setting φ = 1/2 × f XX isprohibited.When not using A/D converter: The value when φ = 5 × f XX , φ = f XX , and φ = 1/2 × f XX are set.3.When using A/D converter: 250 ns (when φ = 5 × f XX is set) and 200 ns (when φ = f XX is set). Settingφ = 1/2 × f XX is prohibited.When not using A/D converter: 250 ns (when φ = 5 × f XX , φ = f XX , and φ = 1/2 × f XX are set).4.When A/D converter used: 5 MHzWhen A/D converter not used: 2 MHz 5.When A/D converter used: 200 nsWhen A/D converter not used: 500 nsRemarkT = t CYK(2)Input wave(3)Output wave (other than CLKOUT)ParameterSymbol ConditionsMIN.MAX.Unit Output rise time <16>t OR 10ns Output fall time<17>t OF10ns(4)Reset timingParameterSymbol ConditionsMIN.MAX.Unit RESET width, high <18>t WRSH 500ns RESET width, low<19>t WRSLOn power appli- 500 + T OST nscation, or on releasing STOP modeExcept on power 500nsapplication, or except on releas-ing STOP modeRemark T OST : Oscillation stabilization time(5)Read timing (1/2)Parameter Symbol Conditions MIN.MAX.Unit Delay time from CLKOUT↑ to address<20>t DKA 3 20ns Delay time from CLKOUT↑ to R/W, UBEN, LBEN<78>t DKA2 –2 +13ns Delay time from CLKOUT↑ to address float<21>t FKA 3 15ns Delay time from CLKOUT↓ to ASTB<22>t DKST 3 15ns Delay time from CLKOUT↓ to DSTB<23>t DKD 3 15ns Data input setup time (to CLKOUT↑)<24>t SIDK 5ns Data input hold time (from CLKOUT↑)<25>t HKID 5ns WAIT setup time (to CLKOUT↓)<26>t SWTK 5ns WAIT hold time (from CLKOUT↓)<27>t HKWT 5ns Address hold time (from CLKOUT↑)<28>t HKA 0ns Address setup time (to ASTB↓)<29>t SAST–40°C ≤ T A≤ +70°C 0.5 T – 10ns70°C < T A≤ 85°C 0.5 T – 12ns Address hold time (from ASTB↓)<30>t HSTA 0.5 T – 10ns Delay time from DSTB↓ to address float<31>t FDA 0ns Data input setup time (to address)<32>t SAID–40°C ≤ T A≤ +70°C (2 + n) T – 22ns70°C < T A≤ 85°C (2 + n) T – 25ns Data input setup time (to DSTB↓)<33>t SDID–40°C ≤ T A≤ +70°C (1 + n) T – 20ns70°C < T A≤ 85°C (1 + n) T – 24ns Delay time from ASTB↓ to DSTB↓<34>t DSTD 0.5 T – 10ns Data input hold time (from DSTB↑)<35>t HDID 0ns Delay time from DSTB↑ to address output<36>t DDA (1 + i) T ns Delay time from DSTB↑ to ASTB↑<37>t DDSTH 0.5 T – 10ns Delay time from DSTB↑ to ASTB↓<38>t DDSTL (1.5 + i) T – 10ns DSTB low-level width<39>t WDL–40°C ≤ T A≤ +70°C (1 + n) T – 10ns70°C < T A≤ 85°C (1 + n) T – 13ns ASTB high-level width<40>t WSTH T – 10ns WAIT setup time (to address)<41>t SAWT1n ≥ 1, –40°C ≤ T A≤ +70°C 1.5 T – 20nsn ≥ 1, 70°C < T A≤ 85°C 1.5 T – 24ns<42>t SAWT2n ≥ 1, –40°C ≤ T A≤ +70°C (1.5 + n) T – 20nsn ≥ 1, 70°C < T A≤ 85°C (1.5 + n) T – 24ns WAIT hold time (from address)<43>t HAWT1n ≥ 1 (0.5 + n) T ns<44>t HAWT2n ≥ 1 (1.5 + n) T ns WAIT setup time (to ASTB↓)<45>t SSTWT1n ≥ 1, –40°C ≤ T A≤ +70°C T – 18nsn ≥ 1, 70°C < T A≤ 85°C T – 20ns<46>t SSTWT2n ≥ 1 (1 + n) T – 15ns WAIT hold time (from ASTB↓)<47>t HSTWT1n ≥ 1 nT ns<48>t HSTWT2n ≥ 1 (1 + n) T nsRemarks 1.T = t CYK2.n indicates the number of wait clocks inserted in the bus cycle. The sampling timing differs whenthe programmable wait state is inserted.3.i indicates the number of idle states (0 or 1) t be inserted in the read cycle.4.Be sure to observe at least one of data input hold times t HKID (<25>) and t HDID (<35>).。
Panduit G5系列电源控制器和配件说明书
PDU Pocket GuideBest-in-Class Outlet Density Optimal Form Factors Superior ReliabilityTMTMTM1-Phase Welcome to the Panduit G5 Seriesof PDU’s and AccessoriesProduct FamiliesQuality & Reliability3-Year standardand 5-Year extended warranty.High TemperatureBuilt with premiumcomponents to withstand 140°F (60°C) at full load.High Density PowerUnique outlets design for high outlet density.Hot-Swappable & UpgradableHot-SwappableController with large OLED display.Hardened SecurityEnhanced security with certificate-based advanced asymmetric encryption, validated and hardened with multiple security scanning tools.1GB On Board Ethernet ConnectionReduces deployment time and labor as PDU auto negotiates to 1GB network switches.Real-Time MonitorReal-time Monitoring of Power, Environmental & Cabinet Security.Plug & Play AccessoriesVariety Environmental & Cabinet Access Control Accessories.Multi-Device WebGUIEnhanced User-Experience with a self adjusting WebGUI that senses the device you are on.Multi-ColorA variety of colored PDU chassis, power cords, and cable ties.Monitored Input (MI Series)Intelligent aggregated input and branch power monitoring to quickyidentify power issues and reclaim available or underutilized power capacity at the power distribution unit level.Monitored Switched (MS Series)Intelligent aggregated input and branch power monitoring with outlet level switching for individual outlets or outlets group, enabling graceful power up/down sequencing, rebooting equipment or restricting unauthorized use of individual outlets.Monitored Per Outlet (MPO Series)Intelligent aggregated input, branch and individual outlet powermonitoring to quickly identify potential power issues, reclaim available or underutilized power capacity at the outlet level enabling more granular power capacity optimization.Monitored & Switched Per Outlet (MSPO Series)Intelligent aggregated input, branch and individual outlet power monitoring with outlet level switching for individual outlets or outlets group, enabling graceful power up/down sequencing, rebooting equipment or restricting unauthorized use of individual outlets.Basic PDU’sNon-intelligent power distribution unit with compact design providing reliable power for low cost solutions.AccessoriesOffering extensive variety of intelligent environmental sensors and security devices to be used with intelligent power distribution units. Also offering dual locking power cords to be used with all power1-Phase G5 iPDULow Profile Design saves rack space Increase airflowMetering+/- 1% billing-gradeaccuracyHigh DensityBest-in-Class outletdensity to match theincreased density ofHot-SwappableNetwork Modulewith Power ShareDaisy-Chain CapabilitiesUp to 4 PDU’sand 32 sensorsTemperature140°F (60°C) withFull Load RatingPremium Hydraulic-Magnetic Circuit BreakersStable trip characteristics atextreme temperaturesLocking IEC Outletswith Power Cords1GB Ethernetwith RedundantNetwork AccessColor Coded Outletsand Circuit BreakersEnvironmental & SecurityAdvanced SmartZone™ SecurityHandle featuring threshold basedbeacon alerts and 200 usersSmartZone™ Security HandleUSB PortFirmware Upgrade andAutomatic Rack Light1-PhaseInput CurrentApparent Power Outlet Length Width Depth (inches)at Outlet Panduit NORTH AMERICAMonitored Input(MI Series)Input CurrentApparent Power Outlet LengthWidth Depth (inches)at Outlet Panduit NORTH AMERICAMonitored Input(MI Series)(table continues on next page)1-PhaseInput CurrentApparentPower Outlet LengthWidth Depth (inches)at Outlet Panduit NORTH AMERICAMonitored Input(MI Series)Input CurrentApparent Power Outlet LengthWidth Depth (inches)at Outlet Panduit NORTH AMERICAMonitored Switched(MS Series)CurrentPower Outlet Length Width at Outlet PanduitCurrent Power Outlet Length Width at Outlet PanduitInput CurrentApparent Power Outlet LengthWidth Depth (inches)at Outlet PanduitNORTH AMERICAMonitored Per Outlet(MPO Series)(table continues on next page)1-PhaseInput CurrentApparent Power Outlet LengthWidth Depth (inches)at Outlet Panduit NORTH AMERICAMonitored Per Outlet(MPO Series)CurrentPower Outlet Length Width at Outlet PanduitCurrent Power Outlet Length Width at Outlet PanduitCurrentPower Outlet Length Width at Outlet PanduitCurrent Power Outlet Length Width at Outlet PanduitCurrent Power Outlet Length Width at Outlet PanduitCurrent Power Outlet Length Width at Outlet PanduitINTERNATIONALMonitored Per Outlet(MPO Series)INTERNATIONALMonitored and Switched Per Outlet(MSPO Series)Input Current Apparent Power Outlet Length Width Depth (mm)at Outlet Panduit1-PhaseINTERNATIONALBasic SeriesInput Current Apparent Power Outlet Length Width Depth (mm)at Outlet PanduitSecurity & Environmental Accessories that connect directly to the G5 iPDU.Note: A maximum of 8 sensors can be managed by the Panduit ®SmartZone ™G5 PDU controller. See User Manual for Complete Details.DescriptionDimensions L x W x H (in.)Length (ft.)Panduit Part No.Temperature Sensor1.73 x 0.83 x 0.436.56EA001Temperature + Humidity Sensor 1.73 x 0.83 x 0.436.56EB0013 Temperature + Humidity Sensor1.73 x 0.83 x 0.43 6.56EC001Water - Rope2.36 x 2.36 x 0.87 6.56ED001Water - Spot2.36 x 2.36 x 0.8716.40EE0013 Sensor Hub3.35 x 1.26 x 1.06n/aEF001Water - Rope extensionn/a6.56EG001Door Switch (magnetic 2 piece) 1.73 x 0.83 x 0.43 (1.14 x 0.67 x 0.28for magnet) 3.28ACA01Dry Contact Input1.73 x 0.83 x 0.439.84ACC01USB Light Strip 15 x 1 x 0.55.0ACD01EA001EE001EB001EF001EC001EG001ED001ACA01ACC01ACD01SmartZone ™ Security Handle & Accessories that attach to the handle.DescriptionDimensions L x W x H (in.)Length (ft.)Panduit Part No.SmartZone ™ Security Handle with Humidity Sensor and Card Readern/an/a ACF05SmartZone ™ Security Handle with Humidity Sensor and Card Reader + Keypad n/a n/a ACF06SmartZone ™ Handle T + Door Sensor n/a 7.64ACF10SmartZone ™ Handle 3T + Door Sensor n/a 9.84ACF11SmartZone ™ Handle to iPDU Harnessn/a9.12ACF20ACF05ACF06ACF10ACF11ACF20Accessories(UL, CE, VDE, TUV Approved)Dual Locking Power CordsGauge/Cross Length (ft.)Part Number (10 pk)2LPCA01-X 4LPCA02-X 6LPCA03-X 8LPCA04-X 2LPCA06-X 4LPCA07-X 6LPCA08-X 8LPCA09-X 2LPCA11-X 4LPCA12-X 6LPCA13-X 8LPCA14-XC14C13C14C13C14C13Gauge/Cross SectionLength (ft.)Part Number (10 pk)2LPCB01-X 4LPCB02-X 6LPCB03-X 8LPCB04-X 2LPCB06-X 4LPCB07-X 6LPCB08-X 8LPCB09-X 2LPCB11-X 4LPCB12-X 6LPCB13-X 8LPCB14-XDual Locking Power CordsIEC C20IEC C19IEC C20IEC C19IEC C20IEC C19(UL, CE, VDE, TUV Approved)Complete Warranty & Compliance information can be found at CustomerService:*******************.777.3300TechnicalSupport:****************************.405.6654。
CD4055中文资料
Data sheet acquired from Harris Semiconductor SCHS048IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
IRG4PH30KD;中文规格书,Datasheet资料
IRG4PH30KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEV CES = 1200VV CE(on) typ.= 3.10V@V GE = 15V, I C = 10APD- 91579AShort Circuit RatedUltraFast IGBTParameterMax.UnitsV CESCollector-to-Emitter Voltage 1200VI C @ T C = 25°C Continuous Collector Current 20I C @ T C = 100°C Continuous Collector Current 10I CM Pulsed Collector Current Q40AI LMClamped Inductive Load Current R 40I F @ T C = 100°C Diode Continuous Forward Current 10I FM Diode Maximum Forward Current 40t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 1.2R θJC Junction-to-Case - Diode–––––– 2.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.24–––R θJA Junction-to-Ambient, typical socket mount ––––––40WtWeight–––6 (0.21)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsWFeatures• High short circuit rating optimized for motor control, t sc =10µs, V CC = 720V , T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• Tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes• Latest generation 4 IGBT's offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces IRGPH30MD2 products • For hints see design tip 97003Benefits2/7/2000 1IRG4PH30KDParameterMin.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—5380I C = 10A Q ge Gate - Emitter Charge (turn-on)—9.014nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2132V GE = 15V t d(on)Turn-On Delay Time —39—t r Rise Time —84—T J = 25°Ct d(off)Turn-Off Delay Time —220340I C = 10A, V CC = 800V t f Fall Time —90140V GE = 15V, R G = 23ΩE on Turn-On Switching Loss —0.95—Energy losses include "tail"E off Turn-Off Switching Loss — 1.15—mJ and diode reverse recovery E ts Total Switching Loss — 2.10 2.6See Fig. 9,10,18t sc Short Circuit Withstand Time 10——µs V CC = 720V, T J = 125°CV GE = 15V, R G = 5.0Ωt d(on)Turn-On Delay Time —42—T J = 150°C, See Fig. 10,11,18t rRise Time—79—I C = 10A, V CC = 800Vt d(off)Turn-Off Delay Time —540—V GE = 15V, R G = 23Ω,t f Fall Time—97—Energy losses include "tail"E ts Total Switching Loss— 3.5—mJ and diode reverse recovery L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —800—V GE = 0V C oes Output Capacitance—60—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —5076ns T J = 25°C See Fig.—72110T J = 125°C 14 I F = 10A I rr Diode Peak Reverse Recovery Current — 4.47.0A T J = 25°C See Fig.— 5.98.8T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —130200nC T J = 25°C See Fig.—250380T J = 125°C 16 di/dt = 200A/µs di (rec)M /dtDiode Peak Rate of Fall of Recovery —210—A/µs T J = 25°C See Fig.During t b—180—T J = 125°C 17Switching Characteristics @ T J = 25°C (unless otherwise specified)nsnsParameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 1200——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.19—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 3.104.2I C = 10A V GE = 15V — 3.90—V I C = 20A See Fig. 2, 5— 3.01—I C = 10A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0—6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage—-12—mV/°C V CE = V GE , I C = 250µA g fe Forward Transconductance T 4.3 6.5—S V CE = 100V, I C = 10A I CES Zero Gate Voltage Collector Current ——250µA V GE = 0V, V CE = 1200V ——3500V GE = 0V, V CE = 1200V, T J = 150°C V FM Diode Forward Voltage Drop — 3.43.8V I C = 10A See Fig. 13— 3.33.7I C = 10A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)IRG4PH30KD 3(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PH30KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4PH30KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageResistance Junction TemperatureIRG4PH30KDFig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward CurrentCollector Current1101000.02.04.06.08.0FMForward Voltage D rop - V (V)I n s t a n t a n e o u s F o r w a r d C u r r e n t ( A )IRG4PH30KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt101001000100001001000fdi /dt - (A/µs)1101001001000fdi /dt - (A/µs)020040060080010001001000fdi /dt - (A/µs)204060801001001000fdi /dt - (A/µs)t r r - ( n s )I I R R M - ( A )d i (re c )M /d t - ( A /µs )Q I R R - ( n C )IRG4PH30KDt2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fE NTFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PH30KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=960V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4PH30KDD im en sion s in M illim eters a nd (Inches)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)- D - 5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140) 2.50 (.089)1.50 (.059)43X0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50 (.217)0.25 (.010)1.40 (.056)1.00 (.039)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)*N O T E S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N T R O L L IN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ).4 C O N F O R M S T O JE D E C O U T L IN E T O -247A C.L E A D A S S IG N M E N T S 1 - G A T E2 - C O L L E C T O R3 - E M IT T E R4 - C O L L E C T O R*LO N G E R LE A D E D (20m m )V E R S IO N A V A IL A B L E (T O -247A D )TO O R D E R A D D "-E " S U FFIX T O P A R T N U M B E RCase Outline — TO-247ACNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 6/00分销商库存信息: IRIRG4PH30KD。
RB705D 40V 30mA 胶囊型氧化钛晶体管型电阻腐蚀电阻说明书
RB705DSchottky Barrier Diode Data sheet ●OutlineV R40V I o30mA I FSM0.2A ●Features●Inner CircuitHigh reliabilitySmall mold typeLow capacitance●Application●Packaging SpecificationsHigh speed switching Packing Embossed T apeReel Size(mm)180T aping Width(mm)8●Structure Quantity(pcs)3000 Epitaxial planar T aping Code T146M arking D3H●Absolute Maximum Ratings (T a = 25ºC unless otherwise stated)Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V R M Duty≦0.540V Reverse voltage V R Rev erse direct v oltage40V A verage rectified forward current I o Glass epoxy mounted、60Hz half sinw aveform、resistive load、per diode30mAPeak forward surge current I FSM60Hz half sin w aveform、Non-repetitive、one cycle、per diode、T a=25ºC0.2A Junction temperature T j-125℃Storage temperature T stg--40 ～ 125℃●Characteristics(T a = 25ºC unless otherwise stated)Value per diodeParameter Symbol Conditions Min.Typ.Max.Unit Forward voltage V F I F=1mA--0.37V Reverse current I R V R=10V--1μA Capacitance between terminals C t V R=1V f=1MHz-2-pF ※Caution：static electricityAttention●Dimensions(SOT-346 SC-59 SMD3)●T aping (Unit:mm)NoticePrecaution on using ROHM Products1.Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.2.ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductorproducts can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, whicha failure or malfunction of our Products may cause. The following are examples of safety measures:[a] Installation of protection circuits or other protective devices to improve system safety[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure3.Our Products are designed and manufactured for use under standard conditions and not under any special orextraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,H2S, NH3, SO2, and NO2[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items[f] Sealing or coating our Products with resin or other coating materials[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-solublecleaning agents for cleaning residue after soldering[h] Use of the Products in places subject to dew condensation4.The Products are not subject to radiation-proof design.5.Please verify and confirm characteristics of the final or mounted products in using the Products.6.In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse,is applied,confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.7.De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use inthe range that does not exceed the maximum junction temperature.8.Confirm that operation temperature is within the specified range described in the product specification.9.ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined inthis document.Precaution for Mounting / Circuit board design1.When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect productperformance and reliability.2.In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mustbe used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.For details, please refer to ROHM Mounting specificationPrecautions Regarding Application Examples and External Circuits1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of thecharacteristics of the Products and external components, including transient characteristics, as well as static characteristics.2. You agree that application notes, reference designs, and associated data and information contained in this documentare presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.Precaution for ElectrostaticThis Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).Precaution for Storage / Transportation1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2[b] the temperature or humidity exceeds those recommended by ROHM[c] the Products are exposed to direct sunshine or condensation[d] the Products are exposed to high Electrostatic2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time periodmay be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leadsmay occur due to excessive stress applied when dropping of a carton.4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products ofwhich storage time is exceeding the recommended storage time period.Precaution for Product LabelA two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.Precaution for DispositionWhen disposing Products please dispose them properly using an authorized industry waste company.Precaution for Foreign Exchange and Foreign Trade actSince concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export.Precaution Regarding Intellectual Property Rights1. All information and data including but not limited to application example contained in this document is for referenceonly. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data.2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of theProducts with other articles such as components, circuits, systems or external equipment (including software).3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or anythird parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein.Other Precaution1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior writtenconsent of ROHM.3. In no event shall you use in any way whatsoever the Products and the related technical information contained in theProducts or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.4. The proper names of companies or products described in this document are trademarks or registered trademarks ofROHM, its affiliated companies or third parties.Datasheet General Precaution1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any priornotice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that allinformation contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.。
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0.027(0.70)
0.014(0.35) Typ.
0.012 (0.30) Typ.
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
0.061 ± 0.002
D
178 ± 1
7.008 ± 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 ± 0.20
0.512 ± 0.008
0603
(SOD-523F)
(mm) (inch)
SYMBOL
E
1.75 ± 0.10
0.069 ± 0.004
F
3.50 ± 0.05
0.138 ± 0.002
0.039(1.00) 0.031(0.80)
0603/SOD-523F
0.071(1.80) 0.063(1.60)
Mechanical data
0.033(0.85)
-Case: 0603/SOD-523F standard package, molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BR -Mounting position: Any -Weight: 0.003 gram(approx.).
REV:A
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分销商库存信息:
COMCHIP CDBU0530-HF
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
Capacitance between terminals ( P F)
60
Fig.4 - Current derating curve
120
Average forward current(%)
Conditions
Symbol Min Typ Max Unit
VF IR CT 100 0.36 0.47 100 V uA pF
f = 1 MHz, and 0 VDC reverse voltage
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SMD Schottky Barrier Diode
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Parameter
Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature
Conditions
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.00 ± 0.10
0.039 ± 0.004
B
1.85 ± 0.10
0.073 ± 0.004
C
1.00 ± 0.10
0.039 ± 0.004
d
1.55 ± 0.05
Reverse current ( A )
10m
100 C
O
100
1m
75 C
O
100u
25 C
O
75 O C
C
125
O
-25
25
O
C
10
O
10u
C
1u 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
-25 C
O
0.1u 0 5 10 15 20
ห้องสมุดไป่ตู้
Forward voltage (V)
Symbol Min Typ Max Unit
V RM VR IO 30 20 0.5 2 -40 +125 +125 V V A A
O
8.3 ms single half sine-wave superimposed on rate load (JEDEC method)
I FSM T STG Tj
SMD Schottky Barrier Diode
CDBU0530-HF
I o = 500 mA V R = 20 Volts RoHS Device Halogen Free
Features
-Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction.
BR
BR
Suggested PAD Layout
0603/SOD-523F SIZE (mm) A B C D E 1.70 0.60 0.80 2.30 1.10 (inch) 0.067 0.024 0.031
C D A E
0.091
B
0.043
Standard Package
Qty per Reel Case Type (Pcs) 0603/SOD-523F 4000 Reel Size (inch) 7
20
f=1MHz O T a =25 C
50
100
40
80
30
60
20
40
10
20
0 0 5 10 15
0
0 25 50 75 100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
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P
4.00 ± 0.10
0.157 ± 0.004
P0
4.00 ± 0.10
0.157 ± 0.004
P1
2.00 ± 0.05
0.079 ± 0.004
T
0.23 ± 0.05
0.009 ± 0.002
W
8.00 ± 0.20
0.315 ± 0.008
W1
13.5 MAX.
0.531 MAX.
0603
(SOD-523F)
(mm) (inch)
REV:A
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SMD Schottky Barrier Diode
Marking Code
Park Number CDBU0530-HF Marking Code
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current Capacitance between terminals I F = 100mA I F = 500mA V R = 20V
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBU0530-HF)
Fig. 1 - Forward characteristics
1000 100m
Fig. 2 - Reverse characteristics
Forward current (mA )