LM3211MT-ADJ中文资料

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LM321MF中文资料

LM321MF中文资料

LM321Low Power Single Op AmpGeneral DescriptionThe LM321brings performance and economy to low power systems.With a high unity gain frequency and a guaranteed 0.4V/µs slew rate,the quiescent current is only 430µA/amplifier (5V).The input common mode range in-cludes ground and therefore the device is able to operate in single supply applications as well as in dual supply applica-tions.It is also capable of comfortably driving large capaci-tive loads.The LM321is available in the SOT23-5package.Overall the LM321is a low power,wide supply range performance op amp that can be designed into a wide range of applications at an economical price without sacrificing valuable board space.Features(V CC =5V,T A =25˚C.Typical values unless specified).n Gain-Bandwidth product 1MHz n Low supply current 430µA n Low input bias current 45nA n Wide supply voltage range +3V to +32V n Stable with high capacitive loads n Single version of LM324Applicationsn Chargersn Power suppliesn Industrial:controls,instruments n DesktopsnCommunications infrastructureConnection DiagramSOT23-520007601Top ViewApplication CircuitDC Summing Amplifier (V IN’s ≥0V DC and V O ≥V DC )20007607Where:V 0=V 1+V 2-V 3-V 4,(V 1+V 2)≥(V 3+V 4)to keep V O>0V DCOrdering InformationPackage Part Number Package MarkingTransport Media NSC Drawing5-Pin SOT-23LM321MF A63A1k Units Tape and Reel MF05ALM321MFX3k Units Tape and ReelApril 2001LM321Low Power Single Op Amp©2001National Semiconductor Corporation Absolute Maximum Ratings(Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Differential Input Voltage±Supply VoltageInput Current (V IN <−0.3V)(Note 6)50mA Supply Voltage (V +-V −)32VInput Voltage−0.3V to +32V Output Short Circuit to GND,V +≤15V and T A =25˚C (Note 2)Continuous Storage Temperature Range−65˚C to 150˚CJunction Temperature (Note 3)150˚C Mounting TemperatureLead Temp (Soldering,10sec)260˚C Infrared (10sec)215˚C Thermal Resistance to Ambient (θJA )265˚C/WESD Tolerance (Note 10)300VOperating Ratings (Note 1)Temperature Range −40˚C to 85˚CSupply Voltage3V to 30VElectrical CharacteristicsUnless otherwise specified,all limits guaranteed for at T A =25˚C;V +=5V,V −=0V,V O =1.4V.Boldface limits apply at temperature extremes.Symbol ParameterConditionsMin (Note 5)Typ (Note 4)Max (Note 5)Units V OS Input Offset Voltage (Note 7)279mV I OS Input Offset Current 550150nA I B Input Bias Current (Note 8)45250500nA V CM Input Common-Mode Voltage Range V +=30V (Note 9)For CMRR >=50dB 0V +-1.5V +-2V A V Large Signal Voltage Gain (V +=15V,R L =2k ΩV O =1.4V to 11.4V)2515100V/mV PSRR Power Supply Rejection Ratio R S ≤10k Ω,V +≤5V to 30V 65100dB CMRR Common Mode Rejection Ratio R S ≤10k Ω6585dB V OOutput SwingV OH V +=30V,R L =2k Ω26V V +=30V,R L =10k Ω2728V OLV +=5V,R L =10k Ω520mV I SSupply Current,No LoadV +=5V 0.4300.7 1.151.2mAV +=30V0.6601.52.853I SOURCE Output Current Sourcing V ID =+1V,V +=15V,V O =2V20104020mAI SINKOutput Current SinkingV ID =−1VV +=15V,V O =2V 105208mA V ID =−1VV +=15V,V O =0.2V12100µA I O Output Short Circuit to Ground (Note 2)V +=15V4085mASRSlew RateV +=15V,R L =2k Ω,V IN =0.5to 3VC L =100pF,Unity Gain 0.4V/µsGBW Gain Bandwidth ProductV +=30V,f =100kHz,V IN =10mV,R L =2k Ω,C L =100pF1MHz φm Phase Margin60degL M 321 2Electrical Characteristics Unless otherwise specified,all limits guaranteed for at TA=25˚C;V+=5V,V−= 0V,V O=1.4V.Boldface limits apply at temperature extremes.(Continued)Symbol Parameter Conditions Min(Note5)Typ(Note4)Max(Note5)UnitsTHD Total Harmonic Distortion f=1kHz,A V=20dBR L=2kΩ,V O=2V PP,C L=100pF,V+=30V0.015%e n Equivalent Input Noise Voltage f=1kHz,R S=100ΩV+=30V40nV/Typical Performance CharacteristicsUnless otherwise specified,V S =+5V,single supply,T A =25˚C.Small Signal Pulse ResponseLarge Signal Pulse Response2000760420007605Supply Current vs.Supply Voltage Sinking Current vs.Output Voltage2000761220007613Source Current vs.Output Voltage Open Loop Frequency Response2000761720007614L M 321 4Application HintsThe LM321op amp can operate with a single or dual power supply voltage,has true-differential inputs,and remain in the linear mode with an input common-mode voltage of0V DC. This amplifier operates over a wide range of power supply voltages,with little change in performance characteristics.At 25˚C amplifier operation is possible down to a minimum supply voltage of3V.Large differential input voltages can be easily accommo-dated and,as input differential voltage protection diodes are not needed,no large input currents result from large differ-ential input voltages.The differential input voltage may be larger than V+without damaging the device.Protection should be provided to prevent the input voltages from going negative more than−0.3V DC(at25˚C).An input clamp diode with a resistor to the IC input terminal can be used.To reduce the power supply drain,the amplifier has a class A output stage for small signal levels which converts to class B in a large signal mode.This allows the amplifiers to both source and sink large output currents.Therefore both NPN and PNP external current boost transistors can be used to extend the power capability of the basic amplifiers.The output voltage needs to raise approximately1diode drop above ground to bias the on-chip vertical PNP transistor for output current sinking applications.For AC applications,where the load is capacitively coupled to the output of the amplifier,a resistor should be used,from the output of the amplifier to ground to increase the class A bias current and to reduce distortion.Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin.Values of50pF can be accommodated using the worst-case non-inverting unity gain rge closed loop gains or resistive isolation should be used if large load capacitance must be driven by the amplifier.The bias network of the LM321establishes a supply current which is independent of the magnitude of the power supply voltage over the range of from3V DC to30V DC.Output short circuits either to ground or to the positive power supply should be of short time duration.Units can be de-stroyed,not as a result of the short circuit current causing metal fusing,but rather due to the large increase in IC chip dissipation which will cause eventual failure due to exces-sive junction temperatures.The larger value of output source current which is available at25˚C provides a larger output current capability at elevated temperatures than a standard IC op amp.The circuits presented in the section on typical applications emphasize operation on only a single power supply voltage. If complementary power supplies are available,all of the standard op amp circuits can be used.In general,introduc-ing a pseudo-ground(a bias voltage reference of V+/2)will allow operation above and below this value in single power supply systems.Many application circuits are shown which take advantage of the wide input common-mode voltage range which includes ground.In most cases,input biasing is not required and input voltages which range to ground can easily be accommodated.Typical ApplicationsNon-Inverting DC Gain(0V Input=0V Output)20007606LM3215Typical Applications(Continued)Amplitude Modulator CircuitDC Summing Amplifier (V IN’s ≥0V DC and V O ≥V DC )2000760220007607Where:V 0=V 1+V 2-V 3-V 4,(V 1+V 2)≥(V 3+V 4)to keep V O >0V DCPower Amplifier LED Driver20007608V 0=0V DC for V IN =0V DC ,A V =1020007609Fixed Current Sources Lamp Driver2000761020007611L M 321 6SOT23-5Tape and Reel SpecificationTAPE DIMENSIONS200076158mm0.130(3.3)0.124(3.15)0.130(3.3)0.126(3.2)0.138±0.002(3.5±0.05)0.055±0.004(1.4±0.11)0.157(4)0.315±0.012(8±0.3)Tape Size DIM A DIM Ao DIM B DIM Bo DIM F DIM Ko DIM P1DIM WLM3217SOT23-5Tape and Reel Specification(Continued)REEL DIMENSIONS200076168mm 7.00330.000.0591.500.51213.000.79520.20 2.16555.000.331+0.059/−0.0008.40+1.50/−0.000.56714.40W1+0.078/−0.039W1+2.00/−1.00Tape SizeABCDNW1W2W3L M 321 8Physical Dimensionsinches (millimeters)unless otherwise noted5-Pin SOT23NS Package Number MF05ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:ap.support@National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507LM321Low Power Single Op AmpNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

LMV321中文资料

LMV321中文资料
The chips are built with National’s advanced submicron silicon-gate BiCMOS process. The LMV321/358/324 have bipolar input and output stages for improved noise performance and higher output current drive.
5
µV/˚C
IB
Input Bias Current
15
250
nA
500
max
IOS
Input Offset Current
5
50
nA
150
max
CMRR PSRR VCM
Common Mode Rejection Ratio 0V ≤ VCM ≤ 4V
Power Supply Rejection Ratio
Input Common-Mode Voltage Range
2.7V ≤ V+ ≤ 5V VO = 1V VCM = 1V For CMRR≥50dB
65
50
dB
min
60
50
dB
min
−0.2
0Vmin4.24V
max
AV
Large Signal Voltage Gain (Note RL = 2kΩ
Output Short Circuit Current
Sourcing, VO = 0V
60
5
m
min
Sinking, VO = 5V
160
10
mA
min
IS
Supply Current

MVL-321YD中文资料

MVL-321YD中文资料

Part No. : MVL-321URD Parameter
Luminous Intensity Forward Voltage Reverse Current Wavelength Spectral Line Half Width Viewing Angle
Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA
Part No. : MVL-321DRD Parameter
Luminous Intensity Forward Voltage Reverse Current Wavelength Spectral Line Half Width Viewing Angle
Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA
Max . 2.8
100 -
@TA=25oC Unit . mcd V µA nm nm deg
Max . 2.8
100 -
@TA=25oC Unit . mcd V µA nm nm deg
Max . 2.4
100 -
@TA=25oC Unit . mcd V µA nm nm deg
Max . 2.4
04/30/2002 Unite: mm ( inches )
Applications
l Popular T-1 (φ3mm) diameter package l Selected minimum intensities l General purpose leads l Reliable and rugged
Symbol IV VF IR λp ∆λ

S21MT1中文资料

S21MT1中文资料

Outline Dimensions (Unit : mm)FeaturesApplicationAbsolute Maximum Ratings(Ta=25˚C)S21MT1/S21MT21. For SSRFor 200V lineZero-cross circuit not built in S21MT1S21MT2Compact 4-pin DIP Type Phototriac CouplerZero-cross circuit built inModel Line-ups*1 Decrease in the ambient temperature range of the Absolute Max. Rating : Shown in Figs. 1 and 2.*2 40 to 60% RH, AC for 1 minute *3 For 10 secondsRating InputForward current I F 50mA Reverse voltageV R 6V OutputRMS ON-state current*1I T 0.1A rms Peak one cycle surge currentI surge 1.2 (50Hz sine wave)A Repetitive peak OFF-state voltage V DRM 600V Isolation voltage*2V iso 5 000V rms Operating temperature T opr -30to+100˚C Storage temperature T stg -55to+125˚C Soldering temperature*3T sol260 (for 10 sec)˚CSymbol Unit 1. Compact 4-pin DIP type(Package area : 2/3 of conventional model)2. Popular typeParameter3. Recognized by UL (No. E64380)s s s s s data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”“In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,-30204060801000-30025********010********70204060801001202050Electro-optical CharacteristicsFig. 1 RMS ON-state Current vs. AmbientTemperatureFig. 2 Forward Current vs. AmbientTemperature(Ta=25˚C)Ambient temperature Ta (˚C)Ambient temperature Ta (˚C)F o r w a r d c u r r e n t I F (m A )R M S O N -s t a t e c u r r e n t I T (m A r m s )Please refer to the chapter "Precautions for Use." (Page 78 to 93)s q。

LM311 LM211中文资料

LM311 LM211中文资料
13.0
V
Saturation Voltage饱和电压
V+≥4.5V, V−=0 VIN≤−10 mV, IOUT≤8mA
0.23
0.4
V
Positive Supply Current正电源电流
TA=25℃
5.1
7.5
mA
Negative Supply Current负电源电流
TA=25℃
4.1
5.0200Fra biblioteknsSaturation Voltage饱和电压
VIN≤−10 mV, IOUT=50 mA TA=25℃
0.75
1.5
V
Strobe ON Current (Note 18)
TA=25℃
2.0
5.0
mA
Output Leakage Current输出漏电流
VIN≥10 mV, VOUT=35V TA=25℃, ISTROBE=3 mA V−= Pin 1 =−5V
Output Short Circuit Duration 210℃
10 sec
LM311电气特性:
Parameter参数
Conditions测试条件
Min最小
Typ典型
Max最大
Units单位
Input Offset Voltage输入偏移电压(注16)
TA=25℃, RS≤50k
2.0
7.5
mV
Parameter参数
Conditions测试条件
Min最小
Typ典型
Max最大
Units单位
Input Offset Voltage输入偏移电压(注7)
TA=25℃, RS≤50k

LM321MF 规格书,Datasheet 资料

LM321MF 规格书,Datasheet 资料

LM321LM321 Low Power Single Op AmpLiterature Number: SNOS935A 芯天下--/LM321Low Power Single Op AmpGeneral DescriptionThe LM321brings performance and economy to low power systems.With a high unity gain frequency and a guaranteed 0.4V/µs slew rate,the quiescent current is only 430µA/amplifier (5V).The input common mode range in-cludes ground and therefore the device is able to operate in single supply applications as well as in dual supply applica-tions.It is also capable of comfortably driving large capaci-tive loads.The LM321is available in the SOT23-5package.Overall the LM321is a low power,wide supply range performance op amp that can be designed into a wide range of applications at an economical price without sacrificing valuable board space.Features(V CC =5V,T A =25˚C.Typical values unless specified).n Gain-Bandwidth product 1MHz n Low supply current 430µA n Low input bias current 45nA n Wide supply voltage range +3V to +32V n Stable with high capacitive loads n Single version of LM324Applicationsn Chargersn Power suppliesn Industrial:controls,instruments n DesktopsnCommunications infrastructureConnection DiagramSOT23-520007601Top ViewApplication CircuitDC Summing Amplifier (V IN’s ≥0V DC and V O ≥V DC )20007607Where:V 0=V 1+V 2-V 3-V 4,(V 1+V 2)≥(V 3+V 4)to keep V O>0V DCOrdering InformationPackage Part Number Package MarkingTransport Media NSC Drawing5-Pin SOT-23LM321MF A63A1k Units Tape and Reel MF05ALM321MFX3k Units Tape and ReelApril 2001LM321Low Power Single Op Amp©2001National Semiconductor Corporation Absolute Maximum Ratings(Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Differential Input Voltage±Supply VoltageInput Current (V IN <−0.3V)(Note 6)50mA Supply Voltage (V +-V −)32VInput Voltage−0.3V to +32V Output Short Circuit to GND,V +≤15V and T A =25˚C (Note 2)Continuous Storage Temperature Range−65˚C to 150˚CJunction Temperature (Note 3)150˚C Mounting TemperatureLead Temp (Soldering,10sec)260˚C Infrared (10sec)215˚C Thermal Resistance to Ambient (θJA )265˚C/WESD Tolerance (Note 10)300VOperating Ratings (Note 1)Temperature Range −40˚C to 85˚CSupply Voltage3V to 30VElectrical CharacteristicsUnless otherwise specified,all limits guaranteed for at T A =25˚C;V +=5V,V −=0V,V O =1.4V.Boldface limits apply at temperature extremes.Symbol ParameterConditionsMin (Note 5)Typ (Note 4)Max (Note 5)Units V OS Input Offset Voltage (Note 7)279mV I OS Input Offset Current 550150nA I B Input Bias Current (Note 8)45250500nA V CM Input Common-Mode Voltage Range V +=30V (Note 9)For CMRR >=50dB 0V +-1.5V +-2V A V Large Signal Voltage Gain (V +=15V,R L =2k ΩV O =1.4V to 11.4V)2515100V/mV PSRR Power Supply Rejection Ratio R S ≤10k Ω,V +≤5V to 30V 65100dB CMRR Common Mode Rejection Ratio R S ≤10k Ω6585dB V OOutput SwingV OH V +=30V,R L =2k Ω26V V +=30V,R L =10k Ω2728V OLV +=5V,R L =10k Ω520mV I SSupply Current,No LoadV +=5V 0.4300.7 1.151.2mAV +=30V0.6601.52.853I SOURCE Output Current Sourcing V ID =+1V,V +=15V,V O =2V20104020mAI SINKOutput Current SinkingV ID =−1VV +=15V,V O =2V 105208mA V ID =−1VV +=15V,V O =0.2V12100µA I O Output Short Circuit to Ground (Note 2)V +=15V4085mASRSlew RateV +=15V,R L =2k Ω,V IN =0.5to 3VC L =100pF,Unity Gain 0.4V/µsGBW Gain Bandwidth ProductV +=30V,f =100kHz,V IN =10mV,R L =2k Ω,C L =100pF1MHz φm Phase Margin60degL M 321 2Electrical Characteristics Unless otherwise specified,all limits guaranteed for at TA=25˚C;V+=5V,V−= 0V,V O=1.4V.Boldface limits apply at temperature extremes.(Continued)Symbol Parameter Conditions Min(Note5)Typ(Note4)Max(Note5)UnitsTHD Total Harmonic Distortion f=1kHz,A V=20dBR L=2kΩ,V O=2V PP,C L=100pF,V+=30V0.015%e n Equivalent Input Noise Voltage f=1kHz,R S=100ΩV+=30V40nV/Typical Performance CharacteristicsUnless otherwise specified,V S =+5V,single supply,T A =25˚C.Small Signal Pulse ResponseLarge Signal Pulse Response2000760420007605Supply Current vs.Supply Voltage Sinking Current vs.Output Voltage2000761220007613Source Current vs.Output Voltage Open Loop Frequency Response2000761720007614L M 321 4Application HintsThe LM321op amp can operate with a single or dual power supply voltage,has true-differential inputs,and remain in the linear mode with an input common-mode voltage of0V DC. This amplifier operates over a wide range of power supply voltages,with little change in performance characteristics.At 25˚C amplifier operation is possible down to a minimum supply voltage of3V.Large differential input voltages can be easily accommo-dated and,as input differential voltage protection diodes are not needed,no large input currents result from large differ-ential input voltages.The differential input voltage may be larger than V+without damaging the device.Protection should be provided to prevent the input voltages from going negative more than−0.3V DC(at25˚C).An input clamp diode with a resistor to the IC input terminal can be used.To reduce the power supply drain,the amplifier has a class A output stage for small signal levels which converts to class B in a large signal mode.This allows the amplifiers to both source and sink large output currents.Therefore both NPN and PNP external current boost transistors can be used to extend the power capability of the basic amplifiers.The output voltage needs to raise approximately1diode drop above ground to bias the on-chip vertical PNP transistor for output current sinking applications.For AC applications,where the load is capacitively coupled to the output of the amplifier,a resistor should be used,from the output of the amplifier to ground to increase the class A bias current and to reduce distortion.Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin.Values of50pF can be accommodated using the worst-case non-inverting unity gain rge closed loop gains or resistive isolation should be used if large load capacitance must be driven by the amplifier.The bias network of the LM321establishes a supply current which is independent of the magnitude of the power supply voltage over the range of from3V DC to30V DC.Output short circuits either to ground or to the positive power supply should be of short time duration.Units can be de-stroyed,not as a result of the short circuit current causing metal fusing,but rather due to the large increase in IC chip dissipation which will cause eventual failure due to exces-sive junction temperatures.The larger value of output source current which is available at25˚C provides a larger output current capability at elevated temperatures than a standard IC op amp.The circuits presented in the section on typical applications emphasize operation on only a single power supply voltage. If complementary power supplies are available,all of the standard op amp circuits can be used.In general,introduc-ing a pseudo-ground(a bias voltage reference of V+/2)will allow operation above and below this value in single power supply systems.Many application circuits are shown which take advantage of the wide input common-mode voltage range which includes ground.In most cases,input biasing is not required and input voltages which range to ground can easily be accommodated.Typical ApplicationsNon-Inverting DC Gain(0V Input=0V Output)20007606LM3215Typical Applications(Continued)Amplitude Modulator CircuitDC Summing Amplifier (V IN’s ≥0V DC and V O ≥V DC )2000760220007607Where:V 0=V 1+V 2-V 3-V 4,(V 1+V 2)≥(V 3+V 4)to keep V O >0V DCPower Amplifier LED Driver20007608V 0=0V DC for V IN =0V DC ,A V =1020007609Fixed Current Sources Lamp Driver2000761020007611L M 321 6SOT23-5Tape and Reel SpecificationTAPE DIMENSIONS200076158mm0.130(3.3)0.124(3.15)0.130(3.3)0.126(3.2)0.138±0.002(3.5±0.05)0.055±0.004(1.4±0.11)0.157(4)0.315±0.012(8±0.3)Tape Size DIM A DIM Ao DIM B DIM Bo DIM F DIM Ko DIM P1DIM WLM3217SOT23-5Tape and Reel Specification(Continued)REEL DIMENSIONS200076168mm 7.00330.000.0591.500.51213.000.79520.20 2.16555.000.331+0.059/−0.0008.40+1.50/−0.000.56714.40W1+0.078/−0.039W1+2.00/−1.00Tape SizeABCDNW1W2W3L M 321 8Physical Dimensionsinches (millimeters)unless otherwise noted5-Pin SOT23NS Package Number MF05ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:ap.support@National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507LM321Low Power Single Op AmpNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements,improvements, and other changes to its products and services at any time and to discontinue any product or service without notice.Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by government requirements,testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design.Customers are responsible for their products and applications using TI components.To minimize the risks associated with customer products and applications,customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any TI patent right,copyright,mask work right, or other TI intellectual property right relating to any combination,machine,or process in which TI products or services are rmation published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.Reproduction of this information with alteration is an unfair and deceptive business practice.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.TI products are not authorized for use in safety-critical applications(such as life support)where a failure of the TI product would reasonably be expected to cause severe personal injury or death,unless officers of the parties have executed an agreement specifically governing such use.Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications,and acknowledge and agree that they are solely responsible for all legal,regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications,notwithstanding any applications-related information or support that may be provided by TI.Further,Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications.TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or"enhanced plastic."Only products designated by TI as military-grade meet military specifications.Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk,and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. 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LM321中文资料_数据手册_参数

LM321中文资料_数据手册_参数

Device Information(1)
PART NUMBER PACKAGE
BODY SIZE (NOM)
LM321
SOT (5)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at the end of the datasheet.
7.3 Feature Description................................................... 7 7.4 Device Functional Modes.......................................... 8 8 Application and Implementation .......................... 9 8.1 Application Information.............................................. 9 8.2 Typical Applications ................................................ 10 9 Power Supply Recommendations...................... 13 10 Layout................................................................... 13 10.1 Layout Guidelines ................................................. 13 10.2 Layout Example .................................................... 14 11 Device and Documentation Support ................. 15 11.1 Trademarks ........................................................... 15 11.2 Electrostatic Discharge Caution ............................ 15 11.3 Glossary ................................................................ 15 12 Mechanical, Packaging, and Orderable Information ........................................................... 15

LMV321IDBVT中文资料

LMV321IDBVT中文资料

PACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LMV321IDBVR ACTIVE SOT-23DBV 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDBVT ACTIVE SOT-23DBV 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKT ACTIVE SC70DCK 5250Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV324ID ACTIVE SOIC D 1450Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324IDR ACTIVE SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324IPWR ACTIVE TSSOP PW 142000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324QD ACTIVE SOIC D 1450Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324QDR ACTIVE SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324QPW ACTIVE TSSOP PW 1490Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324QPWR ACTIVE TSSOP PW 142000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324SID ACTIVE SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324SIDR ACTIVE SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324SIPWR ACTIVE TSSOP PW 162000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358ID ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358IDDUR ACTIVE VSSOP DDU 83000Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV358IDGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LMV358IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV358IPW ACTIVE TSSOP PW 8150Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358IPWR ACTIVE TSSOP PW 82000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358QD ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358QDDUR ACTIVE VSSOP DDU 83000Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV358QDGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LMV358QDR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358QPWACTIVETSSOPPW8150Pb-Free (RoHS)CU NIPDAULevel-1-250C-UNLIM4-Mar-2005Orderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LMV358QPWRACTIVETSSOPPW82000Pb-Free (RoHS)CU NIPDAULevel-1-250C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -May not be currently available -please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead (Pb-Free).Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,andthus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.4-Mar-2005元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. 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LM1117-adj中文资料

LM1117-adj中文资料

调 节 管 脚 电 流 10≤IOUT≤800mA
变化
1.4V≤VIN-VOUT≤10V
温度稳定性
长期稳定性 TA = 125℃, 1000 小时 RMS 输出噪声 VOUT 的百分比,10Hz≤f≤10kHz
续上表 最小值 典型值 最大值 单位
1
6 mV
1
6 mV
1
10 mV
0.2
0.4 %
1
10 mV
1.782 1.746
2.475 2.450
2.820 2.790 2.790
3.267 3.235
4.950 4.900
典型值 最大值 单位
1.250 1.262 V 1.250 1.270 V
1.800 1.818 V 1.800 1.818 V
2.500 2.525 V 2.500 2.550 V
1
10 mV
1
10 mV
1
10 mV
1
15 mV
1.10 1.20 V
1.15 1.25 V
1.20 1.30 V
800
1200 1500 mA
1.7
5 mA
5
10 mA
5
10 mA
5
10 mA
5
10 mA
5
10 mA
0.01 0.1 %/W
60
120 uA
0.2 0.5 0.3 0.003
5 uA % % %
工作参数
输入电压(VIN to GND):15V 结温(TJ)范围: -LM1117: 0℃~125℃ -LM1117I: -40℃~125℃
LM1117 电气特性
符号

LMV321中文资料_应用电路_引脚图

LMV321中文资料_应用电路_引脚图

这个文档将展示如何跳出LTspice提供的元件库,通过结合来自三个不同芯片供应商的LMV321运算放大器模型来创建一个简单的放大器原理图,如图所示。

这些模型中的每一个都突出了LTspice中可用的不同方法,以便与各种供应商网站提供的各种组件模型一起使用。

这些模型中的每一个都呈现出不同的性能特征。

为了突出这些性能问题,我还在电流- 电压设计中重复使用这三种模型。

目标受众是那些具有在原理图上放置组件并运行仿真经验的受众。

在本教程结束时,您将了解如何解释制造商模型中的.SUBCKT命令,以便与LTspice的opamp2 Pin Table和Attribute编辑器一起使用,以在仿真中使用制造商部件。

步骤1:从芯片供应商处下载适用于LMV321运算放大器的SPICE模型,并放置在新目录中,如TI的LMV321-N制造商的SPICE模型我们将在本教程中结合三个基于LMV321运算放大器的SPICE模型。

为即将绘制的LTspice原理图,符号和模型创建一个文件夹。

我将此目录称为我们的工作目录。

访问这些芯片供应商网站,获取LMV321运算放大器的SPICE模型:TI网站(使用National Semiconductor PSPICE模型):LMV321Maxim运算放大器Macromodels:LMX321STMicroelectronics Macromodels:LMV3x opamp MacromodelLMV321.MODLMX321.FAMLMV3x_macromodel.mod可以使用文本编辑器打开这些文件中的每一个,以查看常见结构:顶部的文档,.SUBCKT命令,spice命令构建模型。

步骤2:打开通用5 pin LTspice Opamp2.asy符号,5pin的运放一般是单个运放,SOT23-5封装居多。

Opamp2.asy可以重复使用从LTspice文件菜单中打开安装目录中的opamp2.asy符号。

lm321 原理

lm321 原理

lm321 原理English:The LM321 is a low power, single operational amplifier that is designed to operate with a single supply voltage. It has a wide range of operating voltage, from 3V to 32V, making it suitable for battery-operated applications. The LM321 is designed to have low input offset voltage, low input bias current, and low power consumption, making it ideal for portable and low power applications. The internal frequency compensation ensures stability in closed-loop circuits, allowing for easy implementation in various applications. With its small package size and low power consumption, the LM321 is a versatile and cost-effective solution for a wide range of applications.中文翻译:LM321是一款低功耗、单运算放大器,专为单电源电压设计。

它具有广泛的工作电压范围,从3V到32V,适用于电池操作应用。

LM321设计具有低输入失调电压、低输入偏置电流和低功耗,非常适合便携式和低功耗应用。

内部频率补偿确保了闭环电路的稳定性,可在各种应用中轻松实现。

LM1117-adj中文资料

LM1117-adj中文资料

订购信息
封装 3 引脚 SOT-223
3 引脚 SOT-220 3 引脚 SOT-252
8 引脚 LLP
TO-263
温度范围 0℃~125℃
-40℃~125℃ 0℃~125℃
0℃~125℃
-40℃~125℃ 0℃~125℃
-40℃~125℃ 0℃~125℃
型号 LM1117MPX-ADJ LM1117MPX-1.8 LM1117MPX-2.5 LM1117MPX-2.85 LM1117MPX-3.3 LM1117MPX-5.0 LM1117IMPX-ADJ LM1117IMPX-3.3 LM1117IMPX-5.0 LM1117T-ADJ LM1117T-1.8 LM1117T-2.5 LM1117T-2.85 LM1117T-3.3 LM1117T-5.0 LM1117DTX-ADJ LM1117DTX-1.8 LM1117DTX-2.5 LM1117DTX-2.85 LM1117DTX-3.3 LM1117DTX-5.0 LM1117IDTX-ADJ LM1117IDTX-3.3 LM1117IDTX-5.0 LM1117LTX-ADJ LM1117LTX-1.8 LM1117LTX-2.5 LM1117LTX-2.85 LM1117LTX-3.3 LM1117LTX-5.0 LM1117ILTX-ADJ LM1117ILTX-3.3 LM1117ILTX-5.0 LM1117SX-ADJ LM1117SX-2.85 LM1117SX-3.3 LM1117SX-5.0
LM1117-1.8 VIN = 3.2V, 0≤IOUT≤800mA
LM1117-2.5 VIN = 3.9V, 0≤IOUT≤800mA
LM1117-2.85 VIN = 4.25V, 0≤IOUT≤800mA

单通道运算放大器 LM321说明书

单通道运算放大器 LM321说明书

Single Channel Operational AmplifierLM321LM321 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging from 3V to 32V for single supplies and ±1.5 to ±16V for split supplies, suiting a variety of applications. LM321 is unity gain stable even with large capacitive loads up to 1.5nF. LM321 is available in a space-saving TSOP−5/SOT23−5 package.Features•Wide Supply V oltage Range: 3V to 32V•Short Circuit Protected Outputs•True Differential Input Stage•Low Input Bias Currents•Internally Compensated•Single and Split Supply Operation•Unity Gain Stable with 1.5nF Capacitive Load•This Device is Pb-Free, Halogen Free/BFR Free and is RoHS CompliantTypical Applications•Gain Stage •Active Filter •Signal ProcessingMARKING DIAGRAMTSOP−5CASE 483PIN CONNECTIONADY= Specific Device CodeA= Assembly LocationY= YearW= Work WeekG= Pb-Free Package15(Note: Microdot may be in either location)VCCIN+VEEOUTIN−Device Package Shipping†ORDERING INFORMATIONLM321SN3T1G TSOP−5(Pb−Free)3000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.Table 1. ABSOLUTE MAXIMUM RATINGS (Over operating free-air temperature, unless otherwise stated)Parameter Rating UnitSupply Voltage36VINPUT AND OUTPUT PINSInput Voltage V EE–0.3 to 32VInput Current±10 mAOutput Short Circuit Duration (Note1)ContinuousTEMPERATUREOperating Temperature–40 to +125 °CStorage Temperature–65 to +150 °C Junction Temperature–65 to +150°CESD RATINGS (Note 2)Human Body Model (HBM)200VCharged Device Model (CDM)800VMachine Model (MM)100VOTHER RATINGSLatch-Up Current (Note 3)100mAMSL Level 1Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Short circuits can cause excessive heating and eventual destruction.2.This device series incorporates ESD protection and is tested by the following methods:ESD Human Body Model tested per JEDEC standard: JESD22−A114ESD Machine Model tested per JEDEC standard: JESD22−A115tch-up Current tested per JEDEC standard: JESD78Table 2. THERMAL INFORMATION (Note4)Parameter Symbol Package Value Unit Junction to Ambient q JA TSOP−5/SOT23−5235°C/W4.As mounted on an 80×80×1.5mm FR4 PCB with 650mm2 and 2oz (0.034mm) thick copper heat spreader. Following JEDECJESD/EIA51.1, 51.2, 51.3 test guidelines.Table 3. RECOMMENDED OPERATING CONDITIONSParameter Symbol Range UnitSupply Voltage (V CC− V EE)V S 3 to 32V Specified Operating Range T A−40 to 85°C Common Mode Input Voltage Range V CM V EE to V CC−1.7V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.Table 4. ELECTRICAL CHARACTERISTICS − V S = 5V(At T A = +25°C, R L = 10k W connected to mid-supply, V CM = V OUT = mid-supply, unless otherwise noted.Boldface limits apply over the specified temperature range, T A = –40°C to 85°C, guaranteed by characterization and/or design.) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICSOffset Voltage V OS V S=5V, V CM=V EE to V CC – 1.7VT A = 25°CT A = –40°C to 85°C −−0.3−79mVOffset Voltage Drift vs Temp D V OS/D T T A = –40°C to 85°C−7−m V/°CInput Bias Current I IB T A = 25°CT A = –40°C to 85°C −−−10−−−500nAInput Offset Current I OS T A = 25°CT A = –40°C to 85°C −−1−−150nACommon Mode Rejection Ratio CMRR V CM = V EE to V CC – 1.7V6585−dBInput Resistance R IN DifferentialCommon Mode −−85300−−G WInput Capacitance C IN DifferentialCommon Mode −−0.61.6−−pFOUTPUT CHARACTERISTICSOpen Loop Voltage Gain A VOL−100−dB Open Loop Output Impedance Z OUT_OL f = UGBW, I O = 0mA−1,200−WOutput Voltage High V OH R L = 2 k W to V EER L = 10 k W to V EE V CC–1.8V CC−1.8V CC−1.4V CC−1.4−−VOutput Voltage Low V OL R L = 10 k W to V CC−V EE+0.8V EE+1.0VOutput Current Capability I O Sinking CurrentV S = 5 VV S = 15 V 10102020−−mAOutput Current Capability I O Sourcing CurrentV S = 5 VV S = 15 V 20204040−−mACapacitive Load Drive C L Phase Margin = 15°−1,500−pF NOISE PERFORMANCEVoltage Noise Density e N f IN = 1 kHz−40−nV/√Hz DYNAMIC PERFORMANCEGain Bandwidth Product GBWP C L = 25 pF, R L to V CC−750−kHz Gain Margin A M C L = 25 pF, R L to V CC−14−dB Phase Margin a M C L = 25 pF, R L to V CC−60−°Slew Rate SR C L = 25 pF, R L = ∞−0.3−V/m s POWER SUPPLYPower Supply Rejection Ratio PSRR V S = 5 V to 32 V62100−dB Quiescent Current I Q No Load−0.250.5mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.Table 5. ELECTRICAL CHARACTERISTICS − V S = 32V(At T A = +25°C, R L = 10k W connected to mid-supply, V CM = V OUT = mid-supply, unless otherwise noted.Boldface limits apply over the specified temperature range, T A = –40°C to 85°C, guaranteed by characterization and/or design.) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICSOffset Voltage V OS V S=32V, V CM=V EE to V CC – 1.7VT A = 25°CT A = –40°C to 85°C −−0.3−79mVOffset Voltage Drift vs Temp D V OS/D T T A = –40°C to 85°C−7−m V/°C Common Mode Rejection Ratio CMRR V CM = V EE to V CC – 1.7V−100−dB OUTPUT CHARACTERISTICSOpen Loop Voltage Gain A VOL T A = 25°CT A = –40°C to 85°C −84100−−−dBOpen Loop Output Impedance Z OUT_OL f = UGBW, I O = 0mA−2,000−WOutput Voltage High V OH R L = 2 k W to V EER L = 10 k W to V EE V CC−2.5V CC−2.5V CC−2.0V CC−1.5−−VOutput Voltage Low V OL R L = 10 k W to V CC−V EE+1.0V EE+1.5V Capacitive Load Drive C L Phase Margin = 15°−1,500−pF NOISE PERFORMANCEVoltage Noise Density e N f IN = 1 kHz−40−nV/√Hz Total Harmonic Distortion +NoiseTHD+N V S=30V, f IN = 1 kHz, R L to V CC−0.02−% DYNAMIC PERFORMANCEGain Bandwidth Product GBWP C L = 25 pF, R L to V CC−900−kHz Gain Margin A M C L = 25 pF, R L to V CC−18−dB Phase Margin a M C L = 25 pF, R L to V CC−66−°Slew Rate SR C L = 25 pF, R L = ∞−0.4−V/m s POWER SUPPLYPower Supply Rejection Ratio PSRR V S = 5 V to 32 V62100−dB Quiescent Current I Q No Load, V S=32V−0.3 1.2mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.Figure 1. Open Loop Gain and Phase Margin vs. FrequencyFigure 2. CMRR vs. FrequencyFigure 3. Inverting Large Signal Step ResponseFigure 4. Inverting Small Signal Step ResponseFigure 5. Phase Margin vs. Load Capacitance Figure 6. Voltage Noise Density vs. FrequencyFrequency (Hz)P h a s e M a r g i n (5)A V O L (dB )100−601001k10k100k1M10M−40−20020406080100120306090120150180210240270Frequency (Hz)C M R R (d B )1001020304050607080901001101001k10k100k1MTime (m s)V o l t a g e (V )−10−40102030405060708090100−3−2−101234Time (m s)V o l t a g e (V )−2−0.12468101214−0.08−0.06−0.04−0.020.00.020.040.060.080.1Load Capacitance (pF)P h a s e M a r g i n (5)100020030050010001500102030405060Frequency (Hz)V o l t a g e N o i s e D e n s i t y (n V //H z )101001000Figure 7. THD+N vs. FrequencyFigure 8. Quiescent Current vs. TemperatureFigure 9. Input Offset Voltage vs. CommonMode Voltage at 3 V SupplyFigure 10. Input Offset Voltage vs. CommonMode Voltage at 5 V SupplyFigure 11. Input Offset Voltage vs. CommonMode Voltage at 32 V Supply Figure 12. Input Bias and Offset Current vs.TemperatureFrequency (Hz)T H D +N (%)10101001k 10k 100k1001000Temperature (5C)Q u i e s c e n t C u r r e n t (m A )0.00−40−200204060801000.050.100.150.200.250.300.35Common Mode Voltage (V)I n p u t O f f s e t V o l t a g e (m V )−0.6−0.4−0.20.00.20.40.60.8Common Mode Voltage (V)I n p u t O f f s e t V o l t a g e (m V )−0.6−0.4−0.20.00.20.40.60.8Common Mode Voltage (V)I n p u t O f f s e t V o l t a g e (m V )−0.651015202530−0.4−0.20.00.20.40.60.8Temperature (5C)C u r r e n t (n A )−10−40−2020406080−8−6−4−20246810100Figure 13. High Level Output Voltage Swing vs.Output Current at 3V SupplyFigure 14. Low Level Output Voltage Swing vs.Output Current at 3V SupplyFigure 15. High Level Output Voltage Swing vs.Output Current at 5V SupplyFigure 16. Low Level Output Voltage Swing vs.Output Current at 5V SupplyFigure 17. High Level Output Voltage Swing vs.Output Current at 32V Supply Figure 18. Low Level Output Voltage Swing vs.Output Current at 32V SupplyOutput Source Current (mA)V C C − V O H (V )0510152025300.51.01.52.02.53.0Output Sink Current (mA)V O L − V E E (m V )5101520200400600800100012001400Output Source Current (mA)V C C − V O H (V )0.51.01.52.02.53.03.54.04.55.0Output Sink Current (mA)V O L − V E E (m V )020040060080010001200140016001800Output Source Current (mA)V C C −V O H (V )00510301525200.51.01.52.02.53.03.54.04.55.0Output Sink Current (mA)V O L − V E E (V )3930152118123456786122427APPLICATION INFORMATIONCIRCUIT DESCRIPTIONThe LM321 is made using two internally compensated, two−stage operational amplifiers. The first stage of each consists of differential input devices Q20 and Q18 with input buffer transistors Q21 and Q17 and the differential to single ended converter Q3 and Q4. The first stage performs not only the first stage gain function but also performs the level shifting and transconductance reduction functions. By reducing the transconductance, a smaller compensation capacitor (only 5.0 pF) can be employed, thus saving chip area. The transconductance reduction is accomplished by splitting the collectors of Q20 and Q18. Another feature of this input stage is that the input common mode range can include the negative supply or ground, in single supply operation, without saturating either the input devices or the differential to single−ended converter. The second stage consists of a standard current source load amplifier stage. Each amplifier is biased from an internal−voltage regulator which has a low temperature coefficient thus giving each amplifier good temperature characteristics as well as excellent power supply rejection.OutputV CCV EE/Gnd Figure 19. LM321 Representative Schematic DiagramLM321 has a class B output stage, which is comprised of push −pull transistors. This type of output is inherently subject to crossover distortion near mid −rail where neither push or pull transistors are conducting. Several techniques can be used to minimize crossover distortion. Connecting the output load to either the positive or negative supply rail instead of mid −rail can reduce the crossover distortion.Additionally, increasing the load resistance relativelydecreases the amount of crossover distortion.VCCVEEOUTFigure 20. Simplified Class B OutputFigure 21. Sine wave with crossover distortionTSOP −5CASE 483ISSUE NDATE 12 AUG 2020SCALE 2:115GENERICMARKING DIAGRAM*ǒmm inchesǓ*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT**This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.XXX = Specific Device Code A = Assembly Location Y = YearW = Work Week G = Pb −Free Package15Discrete/Logic Analog(Note: Microdot may be in either location)XXX = Specific Device Code M = Date Code G = Pb −Free PackageNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A.5.OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION.TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2FROM BODY .DIM MIN MAX MILLIMETERSA B C 0.90 1.10D 0.250.50G 0.95 BSC H 0.010.10J 0.100.26K 0.200.60M 0 10 S2.503.00__2XDETAIL ZTOP VIEW1.35 1.652.853.15MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor theADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library:/design/resources/technical−documentation onsemi Website: ONLINE SUPPORT: /supportFor additional information, please contact your local Sales Representative at /support/sales。

LM1117-ADJ 中文资料

LM1117-ADJ 中文资料

IOUT=10mA, VIN=3.8V, TJ=25°C , 1.782 1.800 1.818 V
0≤IOUT≤1A, 3.2V≤VIN≤10V
1.764 1.800 1.836
AMS1117-2.5,
IOUT=10mA, VIN=4.5V,TJ=25°C , 2.475 2.500 2.525 V
推荐工作条件
参数 输入电压 工作结温范围
符号 VIN TJ
范围 15
-40 ~ +125
单位 V °C
电气特性(除非特别指定,否则黑色字体所示的参数,Tamb=25°C,正常工作结温范围 -40°C ~125°C。)
参数 基准电压
输出电压
符号
测试条件
最小值 典型值 最大值 单位
AMS1117-ADJ,
内部框图
ADVANCED MONOLITHIC SYSTEMS (translate by BONA 0755-82800289)
共10页 第2页
AMS1117
极限参数
参数 输入工作电压 引脚温度 (焊接5秒) 工作结温范围 储存温度 功耗 ESD能力 (最小值)
共10页 第5页
AMS1117
功能描述
AMS1117是一个低漏失电压调整器,它的稳压调整管是由一个PNP驱动的NPN管组成的,漏 失电压定义为: VDROP = VBE+ VSAT。
AMS1117有固定和可调两个版本可用,输出电压可以是:1.2V,1.5V,1.8V,2.5V,2.85V, 3.0V,3.3V,和5.0V。片内过热切断电路提供了过载和过热保护,以防环境温度造成过高的结 温。
为了确保AMS1117的稳定性,对可调电压版本,输出需要连接一个至少22μF的钽电容。对于固 定电压版本,可采用更小的电容,具体可以根据实际应用确定。通常,线性调整器的稳定性随着 输出电流增加而降低。

l321中文资料

l321中文资料

Converter - Brake - Inverter Module(CBI2)Symbol Conditions Maximum Ratings VRRM1600VI FAV TC= 80°C; sine 180°19AI DAVM TC= 80°C; rectangular; d = 1/318AI FSM TVJ= 25°C; t = 10 ms; sine 50 Hz160APtot TC= 25°C85WSymbol Conditions Characteristic Values(TVJ = 25°C, unless otherwise specified)min.typ.max.VF IF= 10 A; TVJ= 25°C 1.3 1.6VTVJ= 125°C 1.3VI R VR= VRRM;TVJ= 25°C0.1mATVJ= 125°C1mAt rr VR= 100 V;IF= 10 A; di/dt = -10 A/µs1µsRthJC (per diode) 1.47K/WThree Phase Brake Chopper Three Phase Rectifier InverterVRRM = 1600V VCES= 1200 V VCES= 1200 VI DAVM = 26 A IC25= 20 A IC25= 20 AI FSM = 160 A VCE(sat)= 2.3 V VCE(sat)= 2.3 V15IXYS reserves the right to change limits, test conditions and dimensions.89Application: AC motor drives withq Input from single or three phase gridq Three phase synchronous orasynchronous motorq electric braking operationFeaturesq High level of integration - only one powersemiconductor module required for thewhole driveq Fast rectifier diodes for enhanced EMCbehaviourq NPT IGBT technology with lowsaturation voltage, low switchinglosses, high RBSOA and short circuitruggednessq Epitaxial free wheeling diodes withHiperfast and soft reverse recoveryq Industry standard package with insulatedcopper base plate and soldering pins forPCB mountingq Temperature sense includedSymbol Conditions Maximum RatingsVCES TVJ= 25°C to 150°C1200VVGESContinuous± 20VVGEMTransient± 30VIC25TC= 25°C20AIC80TC= 80°C15ARBSOA VGE = ±15 V; RG= 82 Ω; TVJ= 125°C ICM= 20AClamped inductive load; L = 100 µH VCEK ≤ VCESt SC VCE= 720 V; VGE= ±15 V; RG= 82 Ω; TVJ= 125°C10µs(SCSOA)non-repetitivePtot TC= 25°C105WSymbol Conditions Characteristic Values(TVJ = 25°C, unless otherwise specified)min.typ.max.Symbol Conditions Maximum RatingsIF25TC= 25°C17AIF80TC= 80°C11AEquivalent Circuits for SimulationConductionD11 - D16Rectifier Diode (typ. at TJ= 125°C)V= 1.11 V; R= 19 mΩT1 - T6 / D1 - D6IGBT (typ. at VGE= 15 V; TJ= 125°C)V= 1.32V; R= 131 mΩFree Wheeling Diode (typ. at TJ= 125°C)V= 1.39 V; R= 56 mΩT7 / D7IGBT (typ. at VGE= 15 V; TJ= 125°C)V= 1.32 V; R= 131 mΩFree Wheeling Diode (typ. at TJ= 125°C)V= 1.39 V; R= 56 mΩThermal ResponseD11 - D16Rectifier Diode (typ.)Cth1= 0.093 J/K; Rth1= 1.212 K/WCth2= 0.778 J/K; Rth2= 0.258K/WT1 - T6 / D1 - D6IGBT (typ.)Cth1= 0.09 J/K; Rth1= 0.954 K/WCth2= 0.809J/K; Rth2= 0.246 K/WFree Wheeling Diode (typ.)Cth1= 0.043 J/K; Rth1= 2.738 K/WCth2= 0.54 J/K; Rth2= 0.462 K/WT7 / D7IGBT (typ.)Cth1= 0.09 J/K; Rth1= 0.954 K/WCth2= 0.809 J/K; Rth2= 0.246 K/WFree Wheeling Diode (typ.)Cth1= 0.043 J/K; Rth1= 2.738 K/WCth2= 0.54 J/K; Rth2= 0.462 K/WSymbol Conditions Maximum RatingsV CES T VJ = 25°C to 150°C 1200V V GES Continuous ± 20V V GEM Transient ± 30V I C25T C = 25°C 20A I C80T C = 80°C15A RBSOA V GE = ±15 V; R G = 82 Ω; T VJ = 125°C I CM = 20A Clamped inductive load; L = 100 µHV CEK ≤ V CESt SCV CE = 720 V; V GE = ±15 V; R G = 82 Ω; T VJ = 125°C 10µs (SCSOA)non-repetitive P tot T C = 25°C 105WSymbolConditionsCharacteristic ValuesSymbol Conditions Maximum RatingsV RRM T VJ = 25°C to 150°C 1200V I F25T C = 25°C 17A I F80T C = 80°C 11ASymbol Conditions Characteristic ValuesDimensions in mm (1 mm = 0.0394")0102030405001002003004005000.00.40.81.21.6I FA P tot W K/W Z thJCFig. 41Fig. 6Fig. 112345670123456751015202530V CEV V CEA V G-di/dt46810121416V V GEI 01234V V FI FFig. 7Typ. output characteristics Fig. 8Typ. output characteristicsFig. 9Typ. transfer characteristicsFig. 10Typ. forward characteristics offree wheeling diodeFig. 11Typ. turn on gate chargeFig. 12Typ. turn off characteristics offree wheeling diodeFig. 17Reverse biased safe operating areaFig. 18Typ. transient thermal impedanceRBSOA0.000010.00010.0010.010.1110200400600800100012001400V CEts VFig. 19Typ. output characteristicsFig. 20Typ. forward characteristics offree wheeling diodeFig. 23Typ. transient thermal impedanceFig. 24Typ. thermistorresistance versustemperature123456V V CEI 0123451015202530VV FI FA 0.00.51.01.52.02.5E off mJ t0.000010.00010.0010.010.11100.00010.0010.010.1110ts Z thJC255075100125150T°C。

LM331中文资料 中文手册 芯片中文资料 芯片中文手册

LM331中文资料 中文手册 芯片中文资料 芯片中文手册

电压-频率变换器LM331LM331是美国NS公司生产的性能价格比较高的集成芯片。

LM331可用作精密的频率电压(F/V)转换器、A/D转换器、线性频率调制解调、长时间积分器以及其他相关的器件。

LM331为双列直插式8脚芯片,其引脚如图3所示。

LM331内部有(1)输入比较电路、(2)定时比较电路、(3)R-S触发电路、(4)复零晶体管、(5)输出驱动管、(6)能隙基准电路、(7)精密电流源电路、(8)电流开关、(9)输出保护点路等部分。

输出管采用集电极开路形式,因此可以通过选择逻辑电流和外接电阻,灵活改变输出脉冲的逻辑电平,从而适应TTL、DTL和CMOS 等不同的逻辑电路。

此外,LM331可采用单/双电源供电,电压范围为4~40V,输出也高达40V。

引脚1(PIN1)为电流源输出端,在f0(PIN3)输出逻辑低电平时,电流源IR输出对电容CL充电。

引脚2(PIN2)为增益调整,改变RS的值可调节电路转换增益的大小。

引脚3(PIN3)为频率输出端,为逻辑低电平,脉冲宽度由Rt和Ct决定。

引脚4(PIN4)为电源地。

引脚5(PIN5)为定时比较器正相输入端。

引脚6(PIN6)为输入比较器反相输入端。

引脚7(PIN7)为输入比较器正相输入端。

引脚8(PIN8)为电源正端。

LM331频率电压转换器V/F变换和F/V变换采用集成块LM331,LM331是美国NS公司生产的性能价格比较高的集成芯片,可用作精密频率电压转换器用。

LM331采用了新的温度补偿能隙基准电路,在整个工作温度范围内和低到4.0V电源电压下都有极高的精度。

同时它动态范围宽,可达100dB;线性度好,最大非线性失真小于0.01%,工作频率低到0.1Hz时尚有较好的线性;变换精度高,数字分辨率可达12位;外接电路简单,只需接入几个外部元件就可方便构成V/F或F/V等变换电路,并且容易保证转换精度。

图2是由LM331组成的电压频率变换电路,LM331内部由输入比较器、定时比较器、R-S触发器、输出驱动、复零晶体管、能隙基准电路和电流开关等部分组成。

TLP321中文资料

TLP321中文资料

Isolation voltage
(Note 1)
IF ∆IF / °C
IFP VR Tj VCEO VECO IC
PC
∆PC / °C
Tj Tstg Topr Tsol RT
∆PT / °C
BVS
Rating
TLP321-1
TLP321-2 TLP321-4
60
50
-0.7 (Ta ≥ 39°C)
3
2002-09-25
元器件交易网
Recommended Operating Conditions
Characteristic
Supply voltage Forward current Collector current Operating temperature
Symbol
-0.5 (Ta ≥ 25°C)
1 (100µs pulse, 100pps)
5
125
80
7
50
150
100
-1.5
-1.0
125
-55~125
-55~100
260 (10s)
250
150
-2.5
-1.5
5000 (AC, 1min., RH ≤ 60%)
Unit
mA mA / °C
A V °C V V mA mW
40
20
0
-20
0
20
40
60
80
100 120
Ambient temperature Ta (°C)
Allowable forward current IF (mA)
TLP321,TLP321-2,TLP321-4

LM321AH中文资料

LM321AH中文资料

TL H 7769LM221 LM321Precision PreamplifiersFebruary 1995LM221 LM321Precision PreamplifiersGeneral DescriptionThe LM221series are precision preamplifiers designed to operate with general purpose operational amplifiers to dras-tically decrease dc errors Drift bias current common mode and supply rejection are more than a factor of 50better than standard op amps alone Further the added dc gain of the LM221decreases the closed loop gain errorThe LM221series operates with supply voltages from g 3V to g 20V and has sufficient supply rejection to operate from unregulated supplies The operating current is programma-ble from 5m A to 200m A so bias current offset current gain and noise can be optimized for the particular application while still realizing very low drift Super-gain transistors are used for the input stage so input error currents are lower than conventional amplifiers at the same operating current Further the initial offset voltage is easily nulled to zero The extremely low drift of the LM221will improve accuracy on almost any precision dc circuit For example instrumen-tation amplifier strain gauge amplifiers and thermocouple amplifiers now using chopper amplifiers can be made withthe LM221 The full differential input and high common-mode rejection are another advantage over choppers For applications where low bias current is more important than drift the operating current can be reduced to low values High operating currents can be used for low voltage noise with low source resistance The programmable operating current of the LM221allows tailoring the input characteris-tics to match those of specialized op ampsThe LM221is specified over a b 25 C to a 85 C range and the LM321over a 0 C to a 70 C temperature rangeFeaturesY Guaranteed drift of LM321A 0 2m V C Y Guaranteed drift of LM221series 1m V C Y Offset voltage less than 0 4mVY Bias current less than 10nA at 10m A operating current Y CMRR 126dB minimum Y 120dB supply rejection YEasily nulled offset voltageTypical ApplicationsThermocouple Amplifier with Cold Junction CompensationTL H 7769–1Set for 2 98V at output with LM113shorted Output should equal ambi-ent temperature at 10mV KAdjust for output reading in CC 1995National Semiconductor Corporation RRD-B30M115 Printed in U S AAbsolute Maximum RatingsSupply Voltage g20V Power Dissipation(Note1)500mW Differential Input Voltage(Notes2and3)g15V Input Voltage(Note3)g15V Operating Temperature RangeLM321A0 C to a70 C Storage Temperature Range b65 C to a150 C Lead Temperature(Soldering 10sec )300 C ESD rating to be determinedElectrical Characteristics(Note4)LM321AParameter ConditionsLM321AUnits Min Typ MaxInput Offset Voltage T A e25 C 6 4k s R SET s70k0 20 4mV Input Offset Current T A e25 CR SET e70k0 30 5nAR SET e6 4k5nAInput Bias Current T A e25 CR SET e70k515nAR SET e6 4k50150nA Input Resistance T A e25 CR SET e70k28M XR SET e6 4k0 2M X Supply Current T A e25 C R SET e70k0 82 2mA Input Offset Voltage6 4k s R SET s70k0 50 65mVInput Bias Current R SET e70k1525nAR SET e6 4k150250nAInput Offset Current R SET e70k0 51nAR SET e6 4k510nA Input Offset Current Drift R SET e70k3pA C Average Temperature R S s200X 6 4k s R SET s70kCoefficient of Input Offset Offset Voltage NulledVoltage0 070 2m V CLong Term Stability3m V yr Supply Current13 5mAInput Voltage Range V S e g15V (Note5)R SET e70k g13VR SET e6 4k a7 b13VCommon-Mode Rejection R SET e70k126140dB Ratio R SET e6 4k120130dBSupply Voltage Rejection R SET e70k118126dB Ratio R SET e6 4k114120dBVoltage Gain T A e25 C R SET e70kR L l3M X1220V V Noise R SET e70k R SOURCE e08nV 0Hz Note1 The maximum junction temperature of the LM321A is85 C For operating at elevated temperature devices in the H08package must be derated based on a thermal resistance of150 C W junction to ambient or18 C W junction to caseNote2 The inputs are shunted with back-to-back diodes in series with a500X resistor for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of1V is applied between the inputsNote3 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltageNote4 These specifications apply for g5s V S s g20V and b55 C s T A s a125 C unless otherwise specified With the LM221A however all temperature specifications are limited to b25 C s T A s a85 C and for the LM321A the specifications apply over a0 C to a70 C temperature rangeNote5 External precision resistor 0 1% can be placed from pins1and8to7increase positive common-mode rangeNote6 See RETS121X for LM121H 883military specs and RET121AX for LM121AH 883military specs2Absolute Maximum RatingsIf Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage g20V Power Dissipation(Note1)500mW Differential Input Voltage(Notes2and3)g15V Input Voltage(Note3)g15V Operating Temperature RangeLM221 LM121A(-883) LM121(-883)b25 C to a85 C LM321 LM321A0 C to a70 C Storage Temperature Range b65 C to a150 C Lead Temperature(Soldering 10sec )260 C ESD rating to be determinedElectrical Characteristics(Note4)LM221 LM321Parameter ConditionsLM221LM321Units Min Typ Max Min Typ MaxInput Offset Voltage T A e25 C 6 4k s R SET s70k0 71 5mV Input Offset Current T A e25 CR SET e70k12nAR SET e6 4k1020nAInput Bias Current T A e25 CR SET e70k1018nAR SET e6 4k100180nA Input Resistance T A e25 CR SET e70k42M XR SET e6 4k0 40 2M X Supply Current T A e25 C R SET e70k1 52 2mA Input Offset Voltage6 4k s R SET s70k1 02 5mVInput Bias Current R SET e70k3028nA R SET e6 4k300280nAInput Offset Current R SET e70k34nA R SET e6 4k3040nAInput Offset Current Drift R SET e70k33pA CAverage Temperature R S s200X 6 4k s R SET s70kCoefficient of Input Offset Voltage Nulled11m V C Offset VoltageLong Term Stability55m V yr Supply Current2 53 5mAInput Voltage Range V S e g15V (Note5)R SET e70k g13g13VR SET e6 4k a7 b13a7 b13VCommon-Mode Rejection R SET e70k120114dB Ratio R SET e6 4k114114dBSupply Voltage Rejection R SET e70k120114dB Ratio R SET e6 4k114114dBVoltage Gain T A e25 C R SET e70kR L l3M X1612V V Noise R SET e70k R SOURCE e088nV 0Hz Note1 The maximum junction temperature of the LM221is100 C The maximum junction temperature of the LM321is85 C For operating at elevated temperature devices in the H08package must be derated based on a thermal resistance of150 C W junction to ambient or18 C W junction to caseNote2 The inputs are shunted with back-to-back diodes in series with a500X resistor for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of1V is applied between the inputsNote3 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltageNote4 These specifications apply for g5s V S s g20V and b55 C s T A s a125 C unless otherwise specified With the LM221 however all temperature specifications are limited to b25 C s T A s a85 C and for the LM321the specifications apply over a0 C to a70 C temperature rangeNote5 External precision resistor 0 1% can be placed from pins1and8to7increase positive common-mode range3Typical Performance CharacteristicsInput Bias CurrentVoltage Drift (Nulled)Distribution of Offset Voltage Drift (Nulled)Distribution of Offset Rejection Positive Power Supply RejectionNegative Power Supply Input Noise VoltageInput Noise Current Voltage Drift Differential Voltage GainSet Resistor and Set Current Set Current Common-Mode LimitsTL H 7769–94Typical Performance Characteristics(Continued)Common-Mode Limits Output Common-Mode Voltage Differential Voltage GainCommon-Mode Rejection Supply Current Offset Voltage Adjustment RatioTL H 7769–10Connection DiagramMetal Can PackageTL H 7769–7Top ViewNote Pin4connected to caseOrder Number LM121AH 883 LM121H 883LM221H LM321H or LM321AHSee NS Package Number H08CNote Outputs are inverting from the input of the same number5Schematic DiagramT L H 7769–86Frequency CompensationUNIVERSAL COMPENSATIONThe additional gain of the LM321preamplifier when used with an operational amplifier usually necessitates additional frequency compensation When the closed loop gain of the op amp with the LM321is less than the gain of the LM321 alone more compensation is needed The worst case situa-tion is when there is100%feedback such as a voltage follower or integrator and the gain of the LM321is high When high closed loop gains are used for example A V e 1000 and only an addition gain of200is inserted by the LM321 the frequency compensation of the op amp will usu-ally sufficeThe frequency compensation shown here is designed to op-erate with any unity-gain stable op amp Figure1shows the basic configuration of frequency stabilizing network In oper-ation the output of the LM321is rendered single ended by a 0 01m F bypass capacitor to ground Overall frequency com-pensation then is achieved by an integrating capacitor around the op ampBandwidth at unity-gain j122q R SET Cfor0 5MHz bandwidth C e4 106R SETFor use with higher frequency op amps such as the LM118 the bandwidth may be increased to about2MHzIf the closed loop gain is greater than unity ‘‘C’’may be decreased toC e4106A CL R SETALTERNATE COMPENSATIONThe two compensation capacitors can be made equal for improved power supply rejection In this case the formula for the compensation capscitor isC e8106A CL R SETTable I shows typical values for the two compensating ca-pacitors for various gains and operating currentsTABLE IClosed Current Set ResistorLoopGain120k X60k X30k X12k X6k XA V e1681302706801300A V e5152756130270A V e1010152768130A V e501351527A V e100–13510A V e500––113A V e1000–––––This table applies for the LM108 LM101A LM741 LM118Capacitance is in pFDESIGN EQUATIONS FOR THE LM321SERIESGain A V1 2c106R SETNull Pot Value should be10%of R SETOperating Current2c0 65VR SETPositive Common-Mode Limit V a b 0 6b0 65V c50kR SET(Typical ApplicationsOffset adjustSee table for frequency compensationTL H 7769–2FIGURE1 Low Drift Op Amp Using the LM321A as a Preamp7Typical Applications(Continued)Gain of1000Instrumentation AmplifierOffset adjustGain trimBetter than1%linearity for input sig-nals up to g10mV gain stability typi-cal a2%from b55to a125 CMatch of R5and R6effect powersupply rejectionTL H 7769–3High Speed Inverting Amplifier with Low DriftBandwidth e10MHzSlew Rate e40V m sTL H 7769–4Medium Speed General Purpose AmplifierBandwidth e3 5MHzSlew Rate e1 1V m sTL H 7769–58Typical Applications(Continued)Increased Common-Mode Range at High Operating CurrentsMatch to0 1%Depends on close loop gainTL H 7769–69L M 221 L M 321P r e c i s i o n P r e a m p l i f i e r sPhysical Dimensions inches (millimeters)Metal Can Package (H)Order Number LM221H LM321H or LM321AHNS Package Number H08CLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309元器件交易网This datasheet has been download from:Datasheets for electronics components.。

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LM3211Step-up PWM DC/DC Converter Integrated with 4BuffersGeneral DescriptionThe LM3211is a compact bias solution for TFT displays.It has a current mode PWM step-up DC/DC converter with a 1.4A,0.17Ωinternal switch.Capable of generating 8V at 300mA from a Lithium Ion battery,the LM3211is ideal for generating bias voltages for large screen LCD panels.The LM3211can be operated at switching frequencies of 600kHz or 1.25MHz,allowing for easy filtering and low noise.An external compensation pin gives the user flexibility in setting frequency compensation,which makes possible the use of small,low ESR ceramic capacitors at the output.The LM3211uses a patented internal circuitry to limit startup inrush current of the boost switching regulator without the use of an external softstart capacitor.An external softstart pin enables the user to tailor the softstart to a specific application.The LM3211contains 4Gamma buffers capable of supplying 35mA source and sink.The TSSOP-20package ensures a low profile overall solution.Featuresn 1.4A,0.17Ω,internal power switch n V IN operating range:2.2V to 7.5Vn 600kHz/1.25MHz selectable frequency step-up DC/DC convertern 20pin TSSOP packagen Inrush current limiting circuitry n External softstart override n 4Gamma buffersApplicationsn LCD Bias Supplies n Handheld Devices n Portable ApplicationsnCellular Phones/Digital CamerasTypical Application Circuit20062231February 2004LM3211Step-up PWM DC/DC Converter Integrated with 4Buffers©2004National Semiconductor Corporation Connection DiagramTop View20062204TSSOP 20packageT JMAX=125˚C,θJA =120˚C/W (Note 1)Pin DescriptionPin Name Function1V SW Power switch input.2V IN Switching Regulator Power input.3SHDN Shutdown pin,active low.4FSLCT Frequency Select pin.FSLCT =V IN for 1.25MHz,FSLCT =AGND or floating for 600kHz.5Vs+Gamma Buffer input supply.6GMA1-in Gamma Buffer input.7GMA2-in Gamma Buffer input.8GMA3-in Gamma Buffer input.9GMA4-in Gamma Buffer input.10NC No Connection,leave open.11NC No Connection,leave open.12GMA4-out Gamma Buffer output.13GMA3-out Gamma Buffer output.14GMA2-out Gamma Buffer output.15GMA1-outGamma Buffer output.16SS Soft start pin.17V C Boost Compensation Network Connection.18FB Output Voltage Feedback input.19AGND Gamma Buffer ground,Analog ground connection for Regulator.20GNDSwitch Power Ground.L M 3211 2Pin FunctionsV SW (Pin 1):This is the drain of the internal NMOS power switch.Minimize the metal trace area connected to this pin to minimize EMI.V IN (Pin 2):Input Supply Pin.Bypass this pin with a capacitor as close to the device as possible.The capacitor should connect between V IN and GND.SHDN(Pin 3):Shutdown Pin.The shutdown pin signal is active low.A voltage of less than 0.3V disables the device.A voltage greater than 0.85V enables the device.FSLCT(Pin 4):Frequency Select Pin.Connecting FSLCT to AGND selects a 600kHz operating frequency for the switch-ing regulator.Connecting FSLCT to V IN selects a 1.25MHz operating frequency.If FSLCT is left floating,the switching frequency defaults to 600kHz.Vs+(Pin 5):Supply pin for the four Gamma buffers.Bypass this pin with a capacitor as close to the device as possible.The capacitor should connect between Vs+and GND.GMA1-in(Pin 6):Gamma Buffer input pin.GMA2-in(Pin 7):Gamma Buffer input pin.GMA3-in(Pin 8):Gamma Buffer input pin.GMA4-in(Pin 9):Gamma Buffer input pin.NC(Pin 10):No Connection.NC(Pin 11):No Connection.GMA4-out(Pin 12):Gamma Buffer output pin.GMA3-out(Pin13):Gamma Buffer output pin.GMA2-out(Pin 14):Gamma Buffer output pin.GMA1-out(Pin 15):Gamma Buffer output pin.SS(Pin 16):Softstart pin.Connect capacitor to SS pin and AGND to slowly ramp inductor current on startup.V C (Pin 17):Compensation Network for Boost switching regulator.Connect resistor/capacitor network between V C pin and AGND for boost switching regulator AC compensa-tion.FB(Pin 18):Feedback pin.Set the output voltage by select-ing values of R1and R2using:Connect the ground of the feedback network to the AGND plane,which can be tied directly to the GND pin.AGND(Pin 19):Analog ground pin.Ground connection for the Gamma buffers and the boost switching regulator.AGND must be tied directly to GND at the pins.GND(Pin 20):Power ground pin.Ground connection for the NMOS power device of the boost switching regulator.GND must be tied directly to AGND at the pins.Ordering InformationOrder Number Package Type NSC Package DrawingSupplied AsLM3211MT-ADJ TSSOP-20MTC2073Units,RailLM3211MTX-ADJTSSOP-20MTC202500Units,Tape and ReelLM32113Block Diagrams2006220320062251L M 3211 4Absolute Maximum Ratings (Note 2)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.V IN-0.3V to 7.5V V SW Voltage -0.3V to 18V FB Voltage -0.3V to 7V V C Voltage 0.965V to 1.565VSHDN Voltage -0.3V to V IN FSLCT Voltage AGND to V IN Supply Voltage,Vs+-0.3V to 14V Buffer Input Voltage Rail-to-Rail Buffer Output VoltageRail-to-RailESD Ratings (Note 3)Human Body Model 2kV Machine Model150VOperating ConditionsOperating Temperature −40˚C to +125˚C Storage Temperature −65˚C to +150˚CSupply Voltage,V IN 2.2V to 7.5VV SW Voltage17V Supply Gamma Buffer,Vs+4V to 14VElectrical CharacteristicsSpecifications in standard type face are for T J =25˚C and those with boldface type apply over the full Operating Tempera-ture Range (T J =−40˚C to +125˚C).Unless otherwise specified,V IN =2.2V and Vs+=8V.Switching Regulator Symbol ParameterConditionsMin (Note 4)Typ (Note 5)Max (Note 4)UnitsI QQuiescent CurrentNot Switching,FSCLT =0V 1.62mA Not Switching,FSCLT =V IN 1.65 2.2Switching,FSCLT =0V 2.53Switching,FSCLT =V IN 3.44Shutdown mode615µA V FBFeedback Voltage 1.239 1.265 1.291V %V FB /∆V IN Feedback Voltage Line Regulation0.030.05%/V I CL Switch Current Limit (Note 6)V IN =2.5V,V OUT =8V 1.4A R DSON Switch R DSON (Note 7)V IN =2.7V170m ΩI B FB Pin Bias Current(Note 8)3090nA V IN Input Voltage Range 2.27.5V I SS Soft Start Current 51115µA T SS Internal Soft Start Ramp TimeFSLCT =0V6.712mS g m Error Amp Transconductance ∆I =5µA60135250µmho A V Error Amp Voltage Gain 135V/V D MAX Maximum Duty Cycle 7885%f S Switching Frequency FSLCT =0V 500600700kHz FSLCT =V IN 0.91.25 1.5MHz I L Switch Leakage Current V SW =17V 0.18520µA SHDN SHDN Threshold Output High 0.850.6V Output Low 0.60.3V I SHDN Shutdown Pin Current 0V ≤SHDN ≤V IN0.51µA UVPOn Threshold 1.8 1.92V Off Threshold 1.7 1.8 1.9V Hysteresis100mV LM32115Electrical CharacteristicsSpecifications in standard type face are for T J =25˚C and those with boldface type apply over the full Operating Tempera-ture Range (T J =−40˚C to +125˚C).Unless otherwise specified,V IN =2.2V and Vs+=8V.BUFFERS Symbol ParameterConditionsMin (Note 4)Typ (Note 5)Max (Note 4)Units V OS Input offset voltage 2.510mV ∆V os /∆T Offset Voltage Drift 8µV/˚C I B Input Bias Current170800nA CMVR Input Common-mode Voltage Range0.05Vs+-0.05V Z IN Input Impedance 400k ΩC IN Input Capacitance 1pFI OUTContinuous Output CurrentVs+=8V,Source 303947mAVs+=8V,Sink −45−37−27Vs+=12V,Source 354859Vs+=12V,Sink−54−44−32V OUT SwingR L =10k,Vo min.0.075V R L =10k,Vo max.7.88R L =2k,Vo min.0.075R L =2k,Vo max.7.85A VCL Voltage Gain R L =2k ΩR L =10k Ω0.9940.99850.9980.9999V/V NL Gain Linearity R L =2k Ω,Buffer input=0.5to (Vs+-0.5V)0.01%Vs+Supply Voltage 412V PSRR Power Supply Rejection RatioVs+=4to 12V 90316µV/V Is+Supply Current/Amplifier Vo =Vs+/2,No Load 0.75 1.2mA SR Slew Rate C L =150pf5.3V/µs BW Bandwidth -3dB,R L =10k Ω,C L =100pf 3MHz φMPhase MarginC L =100pf 78Deg˚Note 1:The maximum allowable power dissipation is a function of the maximum junction temperature,T J (MAX),the junction-to-ambient thermal resistance,θJA ,and the ambient temperature,T A .See the Electrical Characteristics table for the thermal resistance of various layouts.The maximum allowable power dissipation at any ambient temperature is calculated using:P D (MAX)=(T J(MAX)−T A )/θJA .Exceeding the maximum allowable power dissipation will cause excessive die temperature,and the regulator will go into thermal shutdown.Note 2:Absolute maximum ratings are limits beyond which damage to the device may occur.Operating Ratings are conditions for which the device is intended to be functional,but device parameter specifications may not be guaranteed.For guaranteed specifications and test conditions,see the Electrical Characteristics.Note 3:The human body model is a 100pF capacitor discharged through a 1.5k Ωresistor into each pin.The machine model is a 200pF capacitor discharged directly into each pin.Note 4:All limits guaranteed at room temperature (standard typeface)and at temperature extremes (bold typeface).All room temperature limits are 100%production tested or guaranteed through statistical analysis.All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC)methods.All limits are used to calculate Average Outgoing Quality Level (AOQL).Note 5:Typical numbers are at 25˚C and represent the most likely norm.Note 6:Duty cycle affects current limit due to ramp generator.See Switch Current Limit vs.V IN and Switch Current Limit vs.Temperature graphs in the Typical Performance Characteristics section.Note 7:See Typical Performance Characteristics section for Tri-Temperature data for R DSON vs.V IN .Note 8:Bias current flows into FB pin.L M 3211 6Typical Performance CharacteristicsEfficiency vs.Load Current (V OUT =8V,f S =600kHz)Efficiency vs.Load Current (V OUT =8V,f S =1.25MHz)2006222620062225Efficiency vs.Load Current (V OUT =10V,f S =1.25MHz)Switch Current Limit vs.Temperature(V OUT =8V)2006226020062220Switch Current Limit vs.V INR DSON vs.V IN (I SW =1A)2006222220062227LM32117Typical Performance Characteristics(Continued)I Q vs.V IN(600kHz,not switching)I Q vs.V IN(600kHz,switching)2006222120062229I Q vs.V IN(1.25MHz,not switching)I Q vs.V IN(1.25MHz,switching)2006222120062219I Q vs.V IN (In shutdown)Frequency vs.V IN(600kHz)2006221820062223L M 3211 8Typical Performance Characteristics(Continued)Frequency vs.V IN(1.25MHz)Feedback Pin Current vs.Temperature2006222420062257C SS Pin Current vs.V IN Load Transient Response2006225820062276 V OUT=8V,V IN=3V,F=1.25MHz1)Load,80mA to260mA to80mA2)I L,500mA/div,DC3)V OUT,100mV/div,ACT=100µs/divLoad Transient Response Load Transient Response20062283 V OUT=8V,V IN=3V,F=600kHz1)Load,80mA to260mA to80mA2)I L,500mA/div,DC3)V OUT,200mV/div,ACT=100µs/div20062275V OUT=10V,V IN=5V,F=1.25MHz1)Load,195mA to385mA to195mA2)I L,500mA/div,DC3)V OUT,500mV/div,ACT=100µs/divLM32119Typical Performance Characteristics(Continued)Internal Soft Start Internal Soft Start20062279V OUT=8V,V IN=3V,R LOAD=27Ω,C SS=none,F=600kHz1)SHDN,1V/div,DC2)I L,500mA/div,DC3)V OUT,5V/div,DCT=1ms/div20062277V OUT=8V,V IN=3V,R LOAD=27Ω,C SS=none,F=1.25MHz1)SHDN,1V/div,DC2)I L,500mA/div,DC3)V OUT,5V/div,DCT=1ms/divExternal Soft StartInput Offset Voltage mon Mode Voltage(3units)20062278V OUT=8V,V IN=3V,R LOAD=27Ω,C SS=330nF,F=1.25MHz1)SHDN,1V/div,DC2)I L,500mA/div,DC3)V OUT,5V/div,DCT=4ms/div20062261Input Offset Voltage mon Mode Voltage(Over Temperature)Input Bias Current mon Mode Voltage2006226220062263LM321110Typical Performance Characteristics(Continued)Output Voltage vs.Output Current(sinking)Output Voltage vs.Output Current(sourcing)2006226420062265 Supply Current mon Mode Voltage Large Signal Step Response2006226620062268 Positive Slew Rate vs.Capacitive Load Negative Slew Rate vs.Capacitive Load2006226920062270LM3211Typical Performance Characteristics(Continued)Phase Margin vs.Capacitive LoadUnity Gain Frequency vs.Capacitive Load2006227120062272CMRR vs.Frequency PSRR vs.Frequency2006227320062274L M 3211OperationCONTINUOUS CONDUCTION MODEThe LM3211is a current-mode,PWM boost regulator.Aboost regulator steps the input voltage up to a higher outputvoltage.In continuous conduction mode(when the inductorcurrent never reaches zero at steady state),the boost regu-lator operates in two cycles.In the first cycle of operation,shown in Figure1(a),thetransistor is closed and the diode is reverse biased.Energyis collected in the inductor and the load current is supplied byC OUT.The second cycle is shown in Figure1(b).During this cycle,the transistor is open and the diode is forward biased.Theenergy stored in the inductor is transferred to the load andoutput capacitor.The ratio of these two cycles determines the output voltage.The output voltage is defined approximately as:where D is the duty cycle of the switch,D and D'will berequired for design calculationsSETTING THE OUTPUT VOLTAGEThe output voltage is set using the feedback pin and aresistor divider connected to the output as shown in thetypical operating circuit.The feedback pin voltage is1.265V,so the ratio of the feedback resistors sets the output voltageaccording to the following equation:SOFT-START CAPACITORThe LM3211has patented internal circuitry that is used tolimit the inductor inrush current on start-up.This inrushcurrent limiting circuitry serves as a soft-start.However,many applications may require much more soft-start thanwhat is available with the internal circuitry.The external SSpin is used to tailor the soft-start for a specific application.A11µA current charges the external soft-start capacitor,Css.The soft-start time can be estimated as:Tss=Css*0.6V/11µAThe minimum soft-start time is set by the internal soft-startcircuitry,typically7ms for600kHz operation and approxi-mately half that for1.25MHz operation.Only longer soft-starttimes may be implemented using the SS pin and a capacitorC SS.If a shorter time is designed for using the above equa-tion,the internal soft-start circuitry will override it.Due to the unique nature of the dual internal/external soft-start,care was taken in the design to ensure temperaturestable operation.As you can see with the Iss data in theElectrical Characterisitcs table and the graph"Soft-StartCurrent vs.V IN"in the Typical Performance Characterisitcssection,the soft start curent has a temperature coefficientand would lead one to believe there would be significantvariation with temperature.Though the current has a tem-perature coefficient the actual programmed external softstart time does not show this extreme of a temperaturevariation.As you can see in the following transient plots:20062202FIGURE1.Simplified Boost Converter Diagram(a)First Cycle of Operation(b)Second Cycle Of OperationLM3211Operation(Continued)V OUT =8V,V IN =2.5V,R L =27Ω,C SS =330nF,T =4ms/div,F =1.25MHz.Trace:1)SHDN,1V/div,DC Coupled 2)I L ,0.5A/div,DC Coupled 3)V OUT ,5V/div,DC Coupled20062280T A =−20˚C20062281T A =27˚C20062282T A =85˚CWhen programming the softstart time externally,simply use the equation given in the Soft-Start Capacitor section above.This equation uses the typical room temperature value of the soft start current,11µA,to set the soft start time.INTRODUCTION TO COMPENSATIONThe LM3211is a current mode PWM boost converter.The signal flow of this control scheme has two feedback loops,one that senses switch current and one that senses output voltage.To keep a current programmed control converter stable above duty cycles of 50%,the inductor must meet certain criteria.The inductor,along with input and output voltage,will determine the slope of the current through the inductor (see Figure 2(a)).If the slope of the inductor current is too great,the circuit will be unstable above duty cycles of 50%.A 10µH inductor is recommended for most 600kHz applica-tions,while a 4.7µH inductor may be used for most 1.25MHz applications.If the duty cycle is approaching the maximum of 85%,it may be necessary to increase the inductance by as much as 2X.See Inductor and Diode Selection for more detailed inductor sizing.The LM3211provides a compensation pin (V C )to customize the voltage loop feedback.It is recommended that a series combination of R C and C C be used for the compensation network,as shown in the typical application circuit.For any given application,there exists a unique combination of R C and C C that will optimize the performance of the LM3211circuit in terms of its transient response.The series combi-nation of R C and C C introduces a pole-zero pair according to the following equations:where R O is the output impedance of the error amplifier,approximately 1M Ω.For most applications,performance can be optimized by choosing values within the range 5k Ω≤R C ≤60k Ω(R C can be up to 200k Ωif C C2is used,see High Output Capacitor ESR Compensation )and 680pF ≤C C ≤20062205FIGURE 2.(a)Inductor current.(b)Diode current.L M 3211Operation(Continued)4.7nF.Refer to the Applications Information section for rec-ommended values for specific circuits and conditions.Refer to the Compensation section for other design PENSATION FOR BOOST DC/DCThis section will present a general design procedure to help insure a stable and operational circuit.The designs in this datasheet are optimized for particular requirements.If differ-ent conversions are required,some of the components may need to be changed to ensure stability.Below is a set of general guidelines in designing a stable circuit for continu-ous conduction operation,in most all cases this will provide for stability during discontinuous operation as well.The power components and their effects will be determined first,then the compensation components will be chosen to pro-duce stability.INDUCTOR AND DIODE SELECTIONAlthough the inductor sizes mentioned earlier are fine for most applications,a more exact value can be calculated.To ensure stability at duty cycles above 50%,the inductor must have some minimum value determined by the minimum input voltage and the maximum output voltage.This equa-tion is:where fs is the switching frequency,D is the duty cycle,and R DSON is the ON resistance of the internal switch taken from the graph "R DSON vs.V IN "in the Typical Performance Char-acteristics section.This equation is only good for duty cycles greater than 50%(D >0.5),for duty cycles less than 50%the recommended values may be used.The corresponding in-ductor current ripple as shown in Figure 2(a)is given by:The inductor ripple current is important for a few reasons.One reason is because the peak switch current will be the average inductor current (input current or I LOAD /D’)plus ∆i L .As a side note,discontinuous operation occurs when the inductor current falls to zero during a switching cycle,or ∆i L is greater than the average inductor current.Therefore,con-tinuous conduction mode occurs when ∆i L is less than the average inductor current.Care must be taken to make sure that the switch will not reach its current limit during normal operation.The inductor must also be sized accordingly.It should have a saturation current rating higher than the peak inductor current expected.The output voltage ripple is also affected by the total ripple current.The output diode for a boost regulator must be chosen correctly depending on the output voltage and the output current.The typical current waveform for the diode in con-tinuous conduction mode is shown in Figure 2(b).The diode must be rated for a reverse voltage equal to or greater than the output voltage used.The average current rating must be greater than the maximum load current expected,and the peak current rating must be greater than the peak inductor current.During short circuit testing,or if short circuit condi-tions are possible in the application,the diode current rating must exceed the switch current ing Schottky diodes with lower forward voltage drop will decrease power dissipa-tion and increase efficiency.DC GAIN AND OPEN-LOOP GAINSince the control stage of the converter forms a complete feedback loop with the power components,it forms a closed-loop system that must be stabilized to avoid positive feed-back and instability.A value for open-loop DC gain will be required,from which you can calculate,or place,poles and zeros to determine the crossover frequency and the phase margin.A high phase margin (greater than 45˚)is desired for the best stability and transient response.For the purpose of stabilizing the LM3211,choosing a crossover point well be-low where the right half plane zero is located will ensure sufficient phase margin.A discussion of the right half plane zero and checking the crossover using the DC gain will follow.INPUT AND OUTPUT CAPACITOR SELECTIONThe switching action of a boost regulator causes a triangular voltage waveform at the input.A capacitor is required to reduce the input ripple and noise for proper operation of the regulator.The size used is dependant on the application and board layout.If the regulator will be loaded uniformly,with very little load changes,and at lower current outputs,the input capacitor size can often be reduced.The size can also be reduced if the input of the regulator is very close to the source output.The size will generally need to be larger for applications where the regulator is supplying nearly the maximum rated output or if large load steps are expected.A minimum value of 10µF should be used for the less stressful conditions while a 22µF to 47µF capacitor may be required for higher power and dynamic rger values and/or lower ESR may be needed if the application requires very low ripple on the input source voltage.The choice of output capacitors is also somewhat arbitrary and depends on the design requirements for output voltage ripple.It is recommended that low ESR (Equivalent Series Resistance,denoted R ESR )capacitors be used such as ceramic,polymer electrolytic,or low ESR tantalum.Higher ESR capacitors may be used but will require more compen-sation which will be explained later on in the section.The ESR is also important because it determines the peak to peak output voltage ripple according to the approximate equation:∆V OUT )2∆i L R ESR (in Volts)A minimum value of 10µF is recommended and may be increased to a larger value.After choosing the output capaci-tor you can determine a pole-zero pair introduced into the control loop by the following equations:Where R L is the minimum load resistance corresponding to the maximum load current.The zero created by the ESR of the output capacitor is generally very high frequency if the ESR is small.If low ESR capacitors are used it can be neglected.If higher ESR capacitors are used see the High Output Capacitor ESR Compensation section.LM3211Operation(Continued)RIGHT HALF PLANE ZEROA current mode control boost regulator has an inherent righthalf plane zero(RHP zero).This zero has the effect of a zeroin the gain plot,causing an imposed+20dB/decade on therolloff,but has the effect of a pole in the phase,subtractinganother90˚in the phase plot.This can cause undesirableeffects if the control loop is influenced by this zero.To ensurethe RHP zero does not cause instability issues,the controlloop should be designed to have a bandwidth of less than1⁄2the frequency of the RHP zero.This zero occurs at a fre-quency of:where I LOAD is the maximum load current.SELECTING THE COMPENSATION COMPONENTSThe first step in selecting the compensation components R Cand C C is to set a dominant low frequency pole in the controlloop.Simply choose values for R C and C C within the rangesgiven in the Introduction to Compensation section to set thispole in the area of10Hz to500Hz.The frequency of the polecreated is determined by the equation:where R O is the output impedance of the error amplifier,approximately1MΩ.Since R C is generally much less thanR O,it does not have much effect on the above equation andcan be neglected until a value is chosen to set the zero f ZC.f ZC is created to cancel out the pole created by the outputcapacitor,f P1.The output capacitor pole will shift with differ-ent load currents as shown by the equation,so setting thezero is not exact.Determine the range of f P1over the ex-pected loads and then set the zero f ZC to a point approxi-mately in the middle.The frequency of this zero is deter-mined by:Now R C can be chosen with the selected value for C C.Check to make sure that the pole f PC is still in the10Hz to500Hz range,change each value slightly if needed to ensureboth component values are in the recommended range.Afterchecking the design at the end of this section,these valuescan be changed a little more to optimize performance ifdesired.This is best done in the lab on a bench,checking theload step response with different values until the ringing andovershoot on the output voltage at the edge of the load stepsis minimal.This should produce a stable,high performancecircuit.For improved transient response,higher values of R Cshould be chosen.This will improve the overall bandwidthwhich makes the regulator respond more quickly to tran-sients.If more detail is required,or the most optimal perfor-mance is desired,refer to a more in depth discussion ofcompensating current mode DC/DC switching regulators.HIGH OUTPUT CAPACITOR ESR COMPENSATIONWhen using an output capacitor with a high ESR value,orjust to improve the overall phase margin of the control loop,another pole may be introduced to cancel the zero createdby the ESR.This is accomplished by adding another capaci-tor,C C2,directly from the compensation pin V C to ground,inparallel with the series combination of R C and C C.The poleshould be placed at the same frequency as f Z1,the ESRzero.The equation for this pole follows:To ensure this equation is valid,and that C C2can be usedwithout negatively impacting the effects of R C and C C,f PC2must be greater than10f ZC.CHECKING THE DESIGNThe final step is to check the design.This is to ensure abandwidth of1⁄2or less of the frequency of the RHP zero.This is done by calculating the open-loop DC gain,A DC.Afterthis value is known,you can calculate the crossover visuallyby placing a−20dB/decade slope at each pole,and a+20dB/decade slope for each zero.The point at which the gain plotcrosses unity gain,or0dB,is the crossover frequency.If thecrossover frequency is less than1⁄2the RHP zero,the phasemargin should be high enough for stability.The phase mar-gin can also be improved by adding C C2as discussed earlierin the section.The equation for A DC is given below withadditional equations required for the calculation:mc)0.072fs(in V/s)where R L is the minimum load resistance,V IN is the maxi-mum input voltage,g m is the error amplifier transconduc-tance found in the Electrical Characteristics table,and R D-SON is the value chosen from the graph"R DSON vs.V IN"inthe Typical Performance Characteristics section.BUFFER COMPENSATIONThe Gamma buffers in the LM3211are internally compen-sated.They will remain stable with no capacitive load whilesourcing or sinking current.Any capacitance presented by aload in an application will only provide further stability.LM3211。

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