MRF6V14300HR3;MRF6V14300HR5;MRF6V14300HSR3;MRF6V14300HSR5;中文规格书,Datasheet资料

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power transistors designed for applications operating at frequencies

between1200and1400MHz,1%to12%duty cycle.These devices are

suitable for use in pulsed applications.

•Typical Pulsed Performance:V DD=50Volts,I DQ=150mA,P out=

330Watts Peak(39.6W Avg.),f=1400MHz,Pulse Width=300μsec,

Duty Cycle=12%

Power Gain—18dB

Drain Efficiency—60.5%

•Capable of Handling5:1VSWR,@50Vdc,1400MHz,330Watts Peak

Power

Features

•Characterized with Series Equivalent Large--Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of50V DD Operation

•Integrated ESD Protection

•Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•RoHS Compliant

•In Tape and Reel.R3Suffix=250Units per56mm,13inch Reel.

Table1.Maximum Ratings

Rating Symbol Value Unit Drain--Source Voltage V DSS--0.5,+100Vdc Gate--Source Voltage V GS--6.0,+10Vdc Storage Temperature Range T stg--65to+150°C Case Operating Temperature T C150°C Operating Junction Temperature(1,2)T J225°C Table2.Thermal Characteristics

Characteristic Symbol Value(2,3)Unit Thermal Resistance,Junction to Case

Case Temperature65°C,330W Pulsed,300μsec Pulse Width,12%Duty Cycle ZθJC0.13°C/W

1.Continuous use at maximum temperature will affect MTTF.

2.MTTF calculator available at /rf.Select Software&Tools/Development Tools/Calculators to access MTTF

calculators by product.

3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.

Select Documentation/Application Notes--AN1955.

Document Number:MRF6V14300H

Rev.3,4/2010 Freescale Semiconductor

Technical Data

2

RF Device Data

Freescale Semiconductor

MRF6V14300HR3MRF6V14300HSR3Table 3.ESD Protection Characteristics

Test Methodology

Class Human Body Model (per JESD22--A114)1C (Minimum)Machine Model (per EIA/JESD22--A115)A (Minimum)Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4.Electrical Characteristics (T A =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——10μAdc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =100mA)

V (BR)DSS 100——Vdc Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc)

I DSS ——50μAdc Zero Gate Voltage Drain Leakage Current (V DS =90Vdc,V GS =0Vdc)I DSS

—

—

2.5

mA

On Characteristics

Gate Threshold Voltage

(V DS =10Vdc,I D =662μAdc)

V GS(th)0.9 1.6 2.4Vdc Gate Quiescent Voltage

(V DD =50Vdc,I D =150mAdc,Measured in Functional Test)V GS(Q) 1.5 2.43Vdc Drain--Source On--Voltage

(V GS =10Vdc,I D =1.63Adc)V DS(on)

—

0.26

—

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss —0.6—pF Output Capacitance

(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —350—pF Input Capacitance

(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)

C iss

—

330

—

pF

Functional Tests (In Freescale Test Fixture,50ohm system)V DD =50Vdc,I DQ =150mA,P out =330W Peak (39.6W Avg.),f =1400MHz,Pulsed,300μsec Pulse Width,12%Duty Cycle Power Gain G ps 16.51819.5dB Drain Efficiency ηD 59(2)60.5(2)—%Input Return Loss

IRL

—

--12

--9

dB

Pulsed RF Performance (In Freescale Application Test Fixture,50ohm system)V DD =50Vdc,I DQ =150mA,P out =330W Peak (39.6W Avg.),f1=1200MHz,f2=1300MHz and f3=1400MHz,Pulsed,300μsec Pulse Width,12%Duty Cycle,t r =50ns Relative Insertion Phase |∆Φ|—10—°Gain Flatness

G F —0.5—dB Pulse Amplitude Droop D rp —0.3—dB Harmonic 2nd and 3rd H2&H3

—--20—dBc Spurious Response

—

--65

—

dBc

Load Mismatch Stability

(VSWR =3:1at all Phase Angles)VSWR--S All Spurs Below --60dBc Load Mismatch Tolerance

(VSWR =5:1at all Phase Angles)

VSWR--T No Degradation in Output Power

1.Part internally matched both on input and output.

2.Drain efficiency is calculated by:ηD =100×P out V DD ×I peak

where:I peak =(I AVG --I DQ )/Duty Cycle (%)+I DQ .

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