SPB03N60C3中文资料

Cool MOS™ Power TransistorV DS @ T jmax 650V R DS(on)1.4ΩI D3.2AFeature• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v /d t rated • High peak current capability • Improved transconductance• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)Marking 03N60C303N60C303N60C3Type Package Ordering Code SPP03N60C3P-TO220-3-1Q67040-S4401SPB03N60C3P-TO263-3-2Q67040-S4391SPA03N60C3P-TO220-3-31-Maximum Ratings ParameterSymbol Value Unit SPA Continuous drain currentT C = 25 °C T C = 100 °CI D3.223.21)21)APulsed drain current, t p limited by T jmax I D puls 9.69.6A Avalanche energy, single pulseI D =2.4A, V DD =50VE AS 100100mJAvalanche energy, repetitive t AR limited by T jmax 2)I D =3.2A, V DD =50VE AR 0.20.2Avalanche current, repetitive t AR limited by T jmax I AR 3.2 3.2A Gate source voltage static V GS ±20±20V Gate source voltage AC (f >1Hz)V GS ±30±30Power dissipation, T C = 25°CP tot 3829.7W SPP_BOperating and storage temperatureT j , T stg-55...+150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 480 V, I D = 3.2 A, T j = 125 °Cd v/d t50V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC -- 3.3K/W Thermal resistance, junction - case, FullPAK R thJC_FP-- 4.1 Thermal resistance, junction - ambient, leaded R thJA--62 Thermal resistance, junction - ambient, FullPAK R thJA_FP--80SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 3)R thJA---3562-Soldering temperature,1.6 mm (0.063 in.) from case for 10s4)T sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=3.2A-700-Gate threshold voltage V GS(th)I D=135µA, V GS=V DS 2.13 3.9Zero gate voltage drain current I DSS V DS=600V, V GS=0V,T j=25°C T j=150°C --0.5-170µAGate-source leakage current I GSS V GS=30V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=2AT j=25°C T j=150°C --1.263.81.4-ΩGate input resistance R G f=1MHz, open drain-10-Electrical CharacteristicsParameter Symbol Conditions Values Unitmin.typ.max. Transconductance g fs V DS≥2*I D*R DS(on)max,I D=2A- 3.4-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -400-pFOutput capacitance C oss-150-Reverse transfer capacitance C rss-5-Effective output capacitance,5) energy related C o(er)V GS=0V,V DS=0V to 480V-12-Effective output capacitance,6)time relatedC o(tr)-26-Turn-on delay time t d(on)V DD=350V, V GS=0/10V,I D=3.2A,R G=20Ω-7-nsRise time t r-3-Turn-off delay time t d(off)-64100Fall time t f-1220Gate Charge CharacteristicsGate to source charge Q gs V DD=420V, I D=3.2A-2-nC Gate to drain charge Q gd-6-Gate charge total Q g V DD=420V, I D=3.2A,V GS=0 to 10V-1317Gate plateau voltage V(plateau)V DD=420V, I D=3.2A- 5.5-V1Limited only by maximum temperature2Repetitve avalanche causes additional power losses that can be calculated as PAV=E AR*f.3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.4Soldering temperature for TO-263: 220°C, reflow5Co(er)is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.6Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.Electrical CharacteristicsParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C-- 3.2AInverse diode direct current,pulsedI SM--9.6 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=420V, I F=I S ,d i F/d t=100A/µs -250400nsReverse recovery charge Q rr- 1.8-µC Peak reverse recovery current I rrm-15-A Peak rate of fall of reverserecovery currentdi rr/dt T j=25°C---A/µs1 Power dissipation P tot = f (T C)Ptot2 Power dissipation FullPAKP tot = f (T C)Ptot3 Safe operating areaI D = f (V DS )parameter : D = 0 , T C=25°C3ID4 Safe operating area FullPAKI D = f (V DS)parameter: D = 0, T C = 25°C3ID5 Transient thermal impedance Z thJC = f (t p )parameter: D = t p /T-110 10 10 10 10 K/W Z t h J C6 Transient thermal impedance FullPAK Z thJC= f (t p )parameter: D = t p /t110 10 10 10 10 K/WZ t h J C7 Typ. output characteristic I D = f (V DS ); T j=25°C parameter: t p = 10 µs, V GSI D8 Typ. output characteristicI D = f (V DS ); T j =150°C parameter: t p = 10 µs, V GSI D9 Typ. drain-source on resistance R DS(on)=f(I D)parameter: T j=150°C, V GSRDS(on)10 Drain-source on-state resistanceR DS(on) = f (T j)parameter : I = 2 A, V = 10 VRDS(on)11 Typ. transfer characteristicsI D= f (V GS ); V DS≥ 2 x I D xR DS(on)maxparameter: t p = 10 µsID12 Typ. gate chargeV GS= f (Q Gate)parameter:I = 3.2 A pulsedVGS13 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF14 Typ. switching timet = f (I D), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, R G=20Ω15 Typ. switching timet = f (R G), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, I D=3.2 A16 Typ. drain current sloped i/d t = f(R G), inductive load, T j = 125°Cpar.: V DS=380V, V GS=0/+13V, I D=3.2AA/µsdi/dt17 Typ. drain source voltage sloped v/d t = f(R G), inductive load, T j = 125°C par.: V DS=380V, V GS=0/+13V, I D=3.2AV/nsdv/dt18 Typ. switching lossesE = f (ID), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, R G=20ΩmWsE19 Typ. switching lossesE = f(R G), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, I D=3.2AmWsE20 Avalanche SOAI AR = f (t AR)par.: T j≤ 150 °C4IAR21 Avalanche energyE AS = f (T j)par.: I D = 2.4 A, V DD = 50 VE23 Avalanche power lossesP AR = f (f )parameter: E AR=0.2mJ6PAR22 Drain-source breakdown voltageV(BR)DSS = f (Tj)SPP03N60C3V(BR)DSS24 Typ. capacitancesC = f (V DS)parameter: V GS=0V, f=1 MHz25 Typ. C oss stored energy E oss =f (V DS )E Definition of diodes switching characteristicsP-TO-220-3-1All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3P-TO-263-3-2 (D2-PAK)P-TO-220-3-31 (FullPAK)Please refer to mounting instructions (application note AN-TO220-3-31-01)Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that deviceor system Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.。