INSULATED-GATE BIPOLAR TRANSISTOR

专利名称：INSULATED-GATE BIPOLAR TRANSISTOR 发明人：OKABE, Naoto,TOKURA, Norihito

申请号：JP1992001239

申请日：19920928

公开号：WO93/007645P1

公开日：

19930415

专利内容由知识产权出版社提供

摘要：This invention is directed to incorporate a current detection function in an insulated-gate bipolar transistor (IGBT) device. To this end, the IGBT according to the present invention constitutes an impurity diffusion region separately from a unit cell region on the surface of the device so that current can be detected by detecting a voltage drop due to carriers flowing through a lateral direction resistance. In the case of an n-channel IGBT, for example, electrons are injected form a source electrode to an n-type drain layer through an n-type source layer and a channel in the cell regions when the unit cell is ON, and a p-n junction on the drain side is biased, so that holes are injected from a p-type drain layer to the n-type drain layer. At this time, the electrons flow also into the portion below the p-type impurity diffusion region disposed as a detection portion, and hence, injection of holes occurs at this portion, too. The excessive holes are withdrawn to the source electrode through the p-type layer of the detection portion, and in this instance, a potential proportional to the product of the lateral direction resistance of the p-type layer and the hole current appears at the source potential. The device current can be detected by detecting and converting this current.

申请人：OKABE, Naoto,TOKURA, Norihito

地址：JP,JP,JP

国籍：JP,JP,JP

代理机构：USUI, Hirohiko 更多信息请下载全文后查看