AOD413A 40V P-Channel MOSFET 数据手册说明书

Symbol V DS V GS
I DM I AR E AR Symbol
Typ Max 16.7254050R θJC
23Continuous Drain B,H
Units Parameter T C =25°C T C =100°C
Absolute Maximum Ratings T A =25°C unless otherwise noted V T A =70°
C Power Dissipation B Avalanche Current
C Repetitive avalanche energy L=0.1mH C I
D Pulsed Drain Current C
V
Gate-Source Voltage Drain-Source Voltage Steady-State
T A =25°C P DSM T C =25°C Maximum Junction-to-Ambient A,G Steady-State Power Dissipation A
P D T C =100°C °C/W
Thermal Characteristics
Parameter
Units Maximum Junction-to-Ambient A,G
t ≤ 10s
R θJA °C/W °C/W Maximum Junction-to-Case
F
G
S D
G
S
D
Symbol
Min Typ
Max
Units BV DSS -40
V -1T J =55°C
-5I GSS ±100nA V GS(th)-1.7-2
-3
V I D(ON)
-30
A
3644T J =125°C
52655266
g FS 22S V SD -0.76
-1V I S
-12
A C iss 900
1125pF C oss 97pF C rss 68pF R g
14ΩQ g (-10V)16.2
21nC Q g (-4.5V)7.29.4nC Q gs 3.8nC Q gd 3.5nC t D(on) 6.2
ns t r 8.4ns t D(off)44.8ns t f 41.2ns t rr 21.2ns Q rr
13.8
nC -20COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20Gate Source Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
V GS = -10V, V DS = -20V,
I D = -12A
Total Gate Charge m Ω
Turn-On Rise Time Turn-Off DelayTime V GS = -10V, V DS = -20V, R L =1.6Ω,R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime Gate Drain Charge V GS =0V, V DS = -20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS = -4.5V, I D = -8A
I S = -1A,V GS =0V
V DS = -5V, I D = -12A Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
DYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS µA Body Diode Reverse Recovery Charge I F = -12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
V GS = -10V, I D = -12A
Reverse Transfer Capacitance I F = -12A, dI/dt=100A/µs
Gate Threshold Voltage V DS =V GS I D = -250µA Drain-Source Breakdown Voltage On state drain current
I D = -250µA, V GS =0V V GS = -10V, V DS = -5V V DS = -40V, V GS =0V
V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°
C. The SOA curve provides a single pulse ratin g.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev4: April 2011
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
E = 1/2 LI AR AR
BV DSS
I AR
Vdd Vdd
Resistive Switching Test Circuit & Waveforms
90%
10%。