LM3046M中文资料

LM3046M中⽂资料
TL H 7950LM3045 LM3046 LM3086 Transistor Arrays
December1994
LM3045 LM3046 LM3086Transistor Arrays
General Description
The LM3045 LM3046and LM3086each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The tran-sistors are well suited to a wide variety of applications in low power system in the DC through VHF range They may be used as discrete transistors in conventional circuits howev-er in addition they provide the very significant inherent inte-grated circuit advantages of close electrical and thermal matching The LM3045is supplied in a14-lead cavity dual-in-line package rated for operation over the full military tem-perature range The LM3046and LM3086are electrically identical to the LM3045but are supplied in a14-lead mold-ed dual-in-line package for applications requiring only a lim-ited temperature range
Features
Y Two matched pairs of transistors
V BE matched g5mV
Input offset current2m A max at I C e1mA
Y Five general purpose monolithic transistors
Y Operation from DC to120MHz
Y Wide operating current range
Y Low noise figure3 2dB typ at1kHz
Y Full military
temperature range(LM3045)b55 C to a125 C Applications
Y General use in all types of signal processing systems operating anywhere in the frequency range from DC to
VHF
Y Custom designed differential amplifiers
Y Temperature compensated amplifiers
Schematic and Connection Diagram
Dual-In-Line and Small Outline Packages
TL H 7950–1
Top View
Order Number LM3045J LM3046M LM3046N or LM3086N
See NS Package Number J14A M14A or N14A
C1995National Semiconductor Corporation RRD-B30M115 Printed in U S A
Absolute Maximum Ratings (T A e 25 C)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications
LM3045LM3046 LM3086Each Total Each Total Units Transistor Package Transistor Package
Power Dissipation T A e 25 C 300750300750mW T A e 25 C to 55 C 300750mW T A l 55 C Derate at 6 67mW C T A e 25 C to 75 C 300750mW T A l 75 C Derate at 8mW C Collector to Emitter Voltage V CEO 1515V Collector to Base Voltage V CBO 2020V Collector to Substrate Voltage V CIO (Note 1)2020V
Emitter to Base Voltage V EBO
55V Collector Current I C
5050mA Operating Temperature Range
b 55 C to a 125 C b 40 C to a 85 C Storage Temperature Range
b 65 C to a 150 C b 65 C to a 85 C Soldering Information
Dual-In-Line Package Soldering (10Sec )
260 C
260 C
Small Outline Package Vapor Phase (60Seconds)215 C Infrared (15Seconds)220 C
See AN-450‘‘Surface Mounting Methods and Their Effect on Product Reliability’’for other methods of soldering surface mount devices
Electrical Characteristics (T A e 25 C unless otherwise specified)
Limits
Limits Parameter
Conditions
LM3045 LM3046LM3086Units
Min Typ Max
Min Typ Max
Collector to Base Breakdown Voltage (V (BR)CBO )I C e 10m A I E e 020602060V Collector to Emitter Breakdown Voltage (V (BR)CEO )I C e 1mA I B e 015241524V Collector to Substrate Breakdown I C e 10m A I CI e 020602060V Voltage (V (BR)CIO )
Emitter to Base Breakdown Voltage (V (BR)EBO )I E 10m A I C e 05
75
7V Collector Cutoff Current (I CBO )V CB e 10V I E e 00 002400 002
100nA Collector Cutoff Current (I CEO )V CE e 10V I B e 00 5
5m A Static Forward Current Transfer V CE e 3V
I C e 10mA 100100Ratio (Static Beta)(h FE )
I C e 1mA 40
10040
100I C e 10m A
5454
Input Offset Current for Matched V CE e 3V I C e 1mA 0 32
m A Pair Q 1and Q 2l I O1b I IO2l Base to Emitter Voltage (V BE )V CE e 3V
I E e 1mA 0 7150 715V I E e 10mA
0 8000 800Magnitude of Input Offset Voltage for V CE e 3V I C e 1mA 0 455mV Differential Pair l V BE1b V BE2l Magnitude of Input Offset Voltage for Isolated V CE e 3V I C e 1mA
Transistors l V BE3b V BE4l l V BE4b V BE5l 0 45
5mV
l V BE5b V BE3l
Temperature Coefficient of Base to V CE e 3V I C e 1mA
Emitter Voltage
D V BE
D T
J
b 1 9b 1 9mV C Collector to Emitter Saturation Voltage (V CE(SAT))
I B e 1mA I C e 10mA 0 230 23
V Temperature Coefficient of V CE e 3V I C e 1mA
Input Offset Voltage
D V 10
D T
J
1 1
m V C
Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086is isolated from the substrate by an integral diode The substrate (terminal 13)must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
2
Electrical Characteristics (Continued)
Parameter
Conditions Min
Typ Max
Units Low Frequency Noise Figure (NF)
f e 1kHz V CE e 3V 3 25
dB
I C e 100m A R S e 1k X LOW FREQUENCY SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (h fe )f e 1kHz V CE e 3V 110(LM3045 LM3046)
I C e 1mA
(LM3086)
Short Circuit Input Impednace (h ie )3 5k X Open Circuit Output Impedance (h oe )
15 6m mho
Open Circuit Reverse Voltage Transfer Ratio (h re )1 8x 10b 4
ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Y fe )f e 1MHz V CE e 3V 31b j 1 5Input Admittance (Y ie )I C e 1mA
0 3a J 0 04Output Admittance (Y oe )
0 001a j 0 03Reverse Transfer Admittance (Y re )See Curve Gain Bandwidth Product (f T )V CE e 3V I C e 3mA 300
550Emitter to Base Capacitance (C EB )V EB e 3V I E e 00 6pF Collector to Base Capacitance (C CB )V CB e 3V I C e 00 58pF Collector to Substrate Capacitance (C CI )
V CS e 3V I C e 0
2 8
pF
Typical Performance Characteristics
Temperature for Each Cutoff Current vs Ambient Typical Collector To Base Transistor
Temperature for Each Cutoff Current vs Ambient Typical Collector To Emitter Transistor
Beta Ratio for Transistors Q 1and Q 2vs Emitter Current
Current-Transfer Ratio and Typical Static Forward
TL H 7950–2
Q 1Q 2vs Collector Current
for Matched Transistor Pair Typical Input Offset Current Offset Voltage for Differential Voltage Characteristic and Input Typical Static Base To Emitter Transistors vs Emitter Current
Pair and Paired Isolated
TL H 7950–3
3
Typical Performance Characteristics
(Continued)
Each Transistor vs Ambient Voltage Characteristic for Typical Base To Emitter Temperature
Pair and Paired Isolated Characteristics for Differential Typical Input Offset Voltage Temperature
Transistors vs Ambient Collector Current
Typical Noise Figure vs TL H 7950–4
Typical Normalized Forward Current Transfer Ratio Short Circuit Input Impedance
Open Circuit Output Impedance Collector Current Typical Noise Figure vs Collector Current
Typical Noise Figure vs Collector Current
Voltage Transfer Ratio vs and Open Circuit Reverse TL H 7950–5
Admittance vs Frequency Typical Forward Transfer vs Frequency Typical Input Admittance vs Frequency
Typical Output Admittance TL H 7950–6
4
Typical Performance Characteristics
(Continued)
Admittance vs Frequency
Typical Reverse Transfer Product vs Collector Current
Typical Gain-Bandwidth
TL H 7950–7
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number LM3045J NS Package Number J14A
5
L M 3045 L M 3046 L M 3086T r a n s i s t o r A r r a y s
Physical Dimensions inches (millimeters)(Continued)
Molded Small Outline Package (M)
Order Number LM3046M NS Package Number M14A
Molded Dual-In-Line Package (N)Order Number LM3046N or LM3086N
NS Package Number N14A
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