铁电MB85R256H

■ RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Symbol
Unit
Min
Typ
Max
Power supply voltage
VCC
2.7
3.3
3.6
V
High level input voltage
VIH
0.8 × VCC
⎯
VCC + 0.5
V
Low level input voltage
5
MB85R256H
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Unit
Min
Typ
Max
Input leakage current | ILI | VIN = 0 V to VCC
A0
9
A1
8
A2
(FPT-28P-M19)
2
■ PIN FUNCTIONAL DESCRIPTIONS
Pin no. 1 to 10, 21, 23 to 26
11 to 13, 15 to 19 20 27 22 28 14
Pin name A0 to A14 I/O0 to I/O7
CE WE OE VCC GND
usersconsideringapplicationoutsidethelistedconditionsareadvisedtocontacttheirrepresentativesbeforehandparametersymbolratingunitmin?05?05?05?40?40max40vcc05vcc0585125powersupplyvoltagevccvinputvoltagevinvoutputvoltagevoutvoperatingtemperaturetaccstoragetemperaturetstgparametersymbolvalueunitmintypmaxpowersupplyvoltagevcc2733???36vhighlevelinputvoltagevih08vcc?05?40vcc050685vlowlevelinputvoltagevilvoperatingtemperaturetacmb85r256h6electricalcharacteristics1dccharacteristicswithinrecommendedoperatingconditionsvalue2accharacteristics1readcyclewithinrecommendedoperatingconditionsvalueparametersymbolconditionsunitmin?typ?maxinputleakagecurrentilivin0vtovccvout0vtovcccevihoroevihce02votherinputsvcc?02v02vtrcminiio0maceweoevcc10?aoutputleakagecurrentilo??10?aoperatingpowersupplycurrenticc?510mastandbycurrentisb?550?ahighleveloutputvoltagevohioh?20ma08vcc??vlowleveloutputvoltagevoliol20ma??04vparametersymbolunitminmax?2000readcycletimetrc150nsceactivetimetca70readpulsewidthtrp702000???70prechargetimetpc80addresssetupt
Write
L
L
H
Read
L
H
L
H: High level, L: Low level, × : Irrespective of “H” or “L”
I/O7 to I/O0
High-Z
⎯ Data input Data output
Power supply current
Standby (ISB)
⎯ Operation (ICC)
⎯
⎯
10
µA
Output leakage current
| ILO |
VOUT = 0 V to VCC, CE = VIH or OE = VIH
⎯
⎯
10
µA
Operating power supply current
CE = 0.2 V,
ICC Other inputs = VCC − 0.2 V/0.2 V,
3
MB85R256H
■ BLOCK DIAGRAM
A14 to A0 CE WE OE
A14 to A10
Block decoder
Address latch
A7 to A0
Row decoder
FRAM array: 32,768 x 8
A8, A9
Column decoder
Control logic
MB85R256H
Functional description Address input Data input/output Chip enable input Write Enable input Output enable input Power supply ( + 3.3 V Typ) Ground
(2) Write cycle
Parameter
Write cycle time CE active time Write pulse width Precharge time Address setup time Address hold time Data setup time Data hold time Write set up time Write hold time
Value
Unit
Min
Max
150
⎯
70
2000
70
2000
80
⎯
0
⎯
ns
25
⎯
50
⎯
0
⎯
0
⎯
0
⎯
Symbol
tpd tpu
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
80
⎯
⎯
ns
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming Flash memory and E2PROM in durability.
VCC VIN VOUT TA Tstg
− 0.5 − 0.5 − 0.5 − 40 − 40
+ 4.0
V
VCC + 0.5
V
VCC + 0.5
V
+ 85
°C
+ 125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
VIL
− 0.5
⎯
+ 0.6
V
Operating temperature
TA
− 40
⎯
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges.
⎯
5
10
mA
tRC (Min), Ii/o = 0 mA
Standby current
ISB CE, WE, OE ≥ VCC
⎯
5
50
µA
High level output voltage
VOH IOH = − 2.0 mA
0.8 × VCC
⎯
⎯
V
Low level output voltage
VOL IOL = 2.0 mA
4
MB85R256H
■ ABSOLUTE MAXIMUM RANGES
Parameter
Symbol
Rating
Unit
Min
Max
Power supply voltage Input voltage Output voltage Operating temperature Storage temperature
No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand.
FUJITSU MICROELECTRONICS DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
DS05-13106-4Ea
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
: 10 years (+70 °C)
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
Copyright©2006-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2008.3
9
A1
8
A2
(FPT-28P-M17)
(FPT-28P-M03)
OE
22
A11
23
A9
24
A8
25
A13
26
WE
27
VCC
28
A14
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
21
A10
20
CE
19
I/O7
18
I/O6
17
I/O5
16
I/O4
15
I/O3
14
GND
13
I/O2
12
I/O1
11
I/O0
10
Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration: 32,768 words x 8 bits
• High endurance 10 Billion Read/writes (Min)
Symbol
tRC tCA tRP tPC tAS tAH tCE tOE tHZ tOHZ
(within recommended operating conditions)
Value
Unit
Min
Max
150
⎯
70
2000
70
2000
80
⎯
0
⎯
ns
25
⎯
⎯
70⎯Βιβλιοθήκη 70⎯25
⎯
25
6
MB85R256H
26
22 OE
WE
27
VCC
28
21 A10
A14
1
20 CE
A12
2
A7
3
19 I/O7
A6
4
18 I/O6
A5
5
A4
6
17 I/O5
A3
7
16 I/O4
15 I/O3
21
A10
20
CE
19
I/O7
18
I/O6
17
I/O5
16
I/O4
15
I/O3
14
GND
13
I/O2
12
I/O1
11
I/O0
10
A0
MB85R256H
■ PIN ASSIGNMENTS
(TOP VIEW)
A14
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
I/O0 11
I/O1 12
I/O2 13
GND 14
28 VCC
27 WE
26 A13
OE
22
25 A8
A11
23
24 A9
A9 A8
24 25
23 A11
A13
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range : −40 °C to +85 °C