Evaluation method null of GaAs
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专利名称：Evaluation method null of GaAs 发明人：青山 正義,大貫 光明,田中 浩樹,三宅 保彦申请号：JP特願昭63-248734
申请日：19880930
公开号：JP特公平7-32183B2
公开日：
19950410
专利内容由知识产权出版社提供
摘要：PURPOSE:To assure the evaluation of dopant concentration and the measurement of a crystal effect by measuring the maximum length of dislocation around a dent formed by etching with molten KOH after pressing a contactor against a GaAs wafer (100) plane. CONSTITUTION:A dent 1 is formed on a polished GaAs wafer (100) plane by pressing diamond contactor of a microivickers hardness meter gainst that plane. Then, once the GaAs wafer surface including the dent is etched with molten KOH, an etching pit corresponding to dislocation, i.e., alpha dislocation 2 and betadislocation 3 appear. Hereby, dopant concentration can be estimated by measuring the maximum length l of the dislocation formed on the GaAs wafer (100) plane, i.e., the length of the alpha dislocation 2. Further, if the kind and concentration of the dopant are known, a low dislocation change by the dopant, i.e., the effect of hardened crystal can quantitatively be measured by measuring the maximum length of dislocation distribution.
申请人：日立電線株式会社
地址：東京都千代田区丸の内2丁目1番2号
国籍：JP
代理人：松本 孝
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