Image sensor and method of forming the same
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专利名称：Image sensor and method of forming the
same
发明人：Yun-Wei Cheng,Chun-Hao Chou,Kuo-Cheng
Lee,Ying-Hao Chen
申请号：US16512834
申请日：20190716
公开号：US11171172B2
公开日：
20211109
专利内容由知识产权出版社提供
专利附图：
摘要：A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second
dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
地址：Hsinchu TW
国籍：TW
代理机构：McClure, Qualey & Rodack, LLP
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