AO4312

2800
2400 Ciss
2000
1600
1200 Coss
800
400
Crss
0
0
6
12
18
24
30
36
VDS (Volts)
Figure 8: Capacitance Characteristics
IAR (A) Peak Avalanche Current
1000.0
TA=25°C
100.0 10.0
AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VGS (Volts)
10
VDS=18V
8
ID=20A
6
4
2
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Capacitance (pF)
AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
13
17
21
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30 38.5 47 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
TA=150°C
TA=100°C TA=125°C
1.0
1
10
100
1000
Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
VGS=10V, VDS=18V, RL=0.9Ω,
3.1
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
26
ns
tf
Turn-Off Fall Time
4.5
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
VDS=5V, ID=20A
110
S

VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
1
V
IS
Maximum Body-Diode Continuous Current
5.5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
PD
4.2 2.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
36
V
IDSS
Zero Gate Voltage Drain Current
VDS=36V, VGS=0V
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=18V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1560 1952 2345 pF
475 685 890 pF
14
50
85
pF
0.5 1.1
1.6
Ω
SWITCHING PARAMETERS
TJ=55°C
1 µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.3 1.8 2.3
V
ID(ON)
On state drain current
Qg(10V) Total Gate Charge
22 27.8 34 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=18V, ID=20A
10 12.7 17 nC
4.3
nC
Qgd
Gate Drain Charge
4.7
(Note E)
RDS(ON) (mΩ)
12 ID=20A
9
125°C 6
3 25°C
0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
IS (A)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
RθJA
25 50
Maximum Junction-to-Lead
Steady-State
RθJL
12
Max 30 60 15
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Rev 0: December 2010
Page 1 of 6
AO4312
Electrical Characteristics (TJ=25°C unless otherwise noted)
Rev 0: December 2010
Page 2 of 6
AO4312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
4V
100
4.5V
3.5V
80
80
VDS=5V
ID (A)
60 3V
40
20 VGS=2.5V