2SK3686-01中文资料

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2SK3562中文资料

Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
600
V
600
V
±30
V
6
A 24
40
W
345
mJ
6
A
4
mJ
150
°C
-55~150
°C
1: Gate 2: Drain 3: Source
5
Tc = 25°C
PULSE TEST
3
1
0.5 10
0.3
5
3
1
VGS = 0, −1 V
0.1
0
−0.2 −0.4 −0.6 −0.8
−1
−1.2
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE C (pF)
10000 1000
CAPACITANCE – VDS
Ciss
1 VDS = 10 V ID = 1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
50
40 30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Thermal Characteristics

2SK2586中文资料

2SK2586Silicon N-Channel MOS FETADE-208-358 C4th. EditionApplicationHigh speed power switchingFeatures• Low on-resistance• R DS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceOutline2SK25862Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DSS 60V Gate to source voltage V GSS ±20V Drain current I D *260A Drain peak currentI D(pulse)*1240A Body to drain diode reverse drain current I DR *260A Avalanche current I AP *345A Avalanche energy E AR *3174mJ Channel dissipation Pch*2125W Channel temperature Tch 150°C Storage temperatureTstg–55 to +150°CNotes: 1.PW ≤ 10 µs, duty cycle ≤ 1 %2.Value at Tc = 25°C3.Value at Tch = 25°C, Rg ≥ 50 Ω2SK25863Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test Conditions Drain to source breakdown voltageV (BR)DSS 60——V I D = 10 mA, V GS = 0Gate to source breakdown voltageV (BR)GSS ±20——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS ——±10µA V GS = ±16 V, V DS = 0Zero gate voltage drain current I DSS——100µA V DS = 60 V, V GS = 0Gate to source cutoff voltage V GS(off) 1.0— 2.0V I D = 1 mA, V DS = 10 V Static drain to source on state resistanceR DS(on)—710m ΩI D = 30 A V GS = 10 V*1—1016m ΩI D = 30 A V GS = 4 V*1Forward transfer admittance |y fs |3560—S I D = 30 A V DS = 10 V*1Input capacitance Ciss —3550—pF V DS = 10 V Output capacitanceCoss —1760—pF V GS = 0Reverse transfer capacitance Crss —500—pF f = 1 MHz Turn-on delay time t d(on)—35—ns I D = 30 A Rise timet r —260—ns V GS = 10 V Turn-off delay time t d(off)—480—ns R L = 1.0 ΩFall timet f —370—ns Body to drain diode forward voltageV DF —0.94—V I F = 60 A, V GS = 0Body to drain diode reverse recovery time t rr—140—nsI F = 60 A, V GS = 0diF / dt = 50 A / µs Note:1.Pulse TestSee characteristic curves of 2SK2529.2SK25864Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SK3271-01中文资料

Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
பைடு நூலகம்
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Min. Typ. Max. Unit 35,0 °C/W
0,806 °C/W
元器件交易网
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
700
50
200
150
135
100
1,0
85
0,25
S pF pF pF ns ns ns ns A 1,5 V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to ambient channel to case
155
W
150
°C
-55 ~ +150
°C
* L=0,65.4uH, VCC=24V
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified

2SK3356资料

DATA SHEETDocument No.D14133EJ1V0DS00 (1st edition)The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.The mark 5 shows major revised points.DESCRIPTIONThe 2SK3356 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES•Super low on-state resistance:R DS(on)1 = 8.0 m Ω MAX. (V GS = 10 V, I D = 38 A)R DS(on)2 = 12 m Ω MAX. (V GS = 4 V, I D = 38 A)•Low C iss : C iss = 6300 pF TYP.•Built-in gate protection diodeABSOLUTE MAXIMUM RATINGS (T A = 25°C)Drain to Source Voltage V DSS 60V Gate to Source Voltage V GSS(AC)±20V Drain Current (DC)I D(DC)±75A Drain Current (pulse) Note1I D(pulse)±300A Total Power Dissipation (T C = 25°C)P T 130W Total Power Dissipation (T A = 25°C)P T 3.0W Channel Temperature T ch 150°C Storage TemperatureT stg –55 to +150°C Single Avalanche Current Note2I AS 55A Single Avalanche Energy Note2E AS302mJNotes 1.PW ≤ 10 µs, Duty cycle ≤ 1 %2. Starting T ch = 25 °C, R G = 25 Ω, V GS = 20 V → 0 VTHERMAL RESISTANCEChannel to Case Rth(ch-C)0.93°C/W Channel to AmbientRth(ch-A)41.7°C/WORDERING INFORMATIONPART NUMBERPACKAGE 2SK3356TO-3P55555552ELECTRICAL CHARACTERISTICS (T A = 25 °C)CHARACTERISTICSSYMBOL TEST CONDITIONSMIN.TYP.MAX.UNIT Drain to Source On-state ResistanceR DS(on)1V GS = 10 V, I D = 38 A 6.38.0m ΩR DS(on)2V GS = 4 V, I D = 38 A 8.012m ΩGate to Source Cut-off Voltage V GS(off)V DS = 10 V, I D = 1 mA 1.5 2.0 2.5VForward Transfer Admittance | y fs|V DS = 10 V, I D = 38 A 3557SDrain Leakage CurrentI DSS V DS = 60 V, V GS = 0 V 10µA Gate to Source Leakage Current I GSS V GS = ±20 V, V DS = 0V±10µA Input Capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz6300pF Output CapacitanceC oss 1000pF Reverse Transfer Capacitance C rss 490pF Turn-on Delay Time t d(on)ID = 38 A, V GS(on) = 10 V, V DD = 30 V,90ns Rise Timet r R G = 10 Ω1100ns Turn-off Delay Time t d(off)300ns Fall Timet f 400ns Total Gate Charge Q G I D = 75 A , V DD = 48 V, V GS = 10 V 106nC Gate to Source Charge Q GS 20nC Gate to Drain Charge Q GD 30nC Body Diode Forward Voltage V F(S-D)I F = 75 A, V GS = 0 V 1.0V Reverse Recovery Time t rr I F = 75 A, V GS = 0 V,55ns Reverse Recovery ChargeQ rrdi/dt = 100 A/µs100nC5TEST CIRCUIT 3 GATE CHARGEV GS = 20 → 0 TEST CIRCUIT 1 AVALANCHE CAPABILITYL DDTEST CIRCUIT 2 SWITCHING TIMEL DDτ = 1 µsDuty Cycle ≤ 1 %3PACKAGE DRAWING (Unit: mm)Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.TO-3P (MP-88)EQUIVALENT CIRCUITBody DiodeDiodeDrain• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual propertyrights of third parties by or arising from use of a device described herein or any other liability arising from useof such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or otherintellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits,software, and information in the design of the customer's equipment shall be done under the full responsibilityof the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on acustomer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.M7 98. 8。

2SK1941中文资料

Unit V V A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min. Typ. Max. Unit 30 °C/W 1,25 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=8A
VGS=10V
Forward Transconductance
g fs
ID=8A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
tr
ID=8A
Turn-Off-Time toff (ton=td(off)+tf)

2SK1647L-E中文资料

元器件交易网
2SK1647(L), 2SK1647(S)
Silicon N Channel MOS FET
REJ03G0963-0200 (Previous: ADE-208-1306) Rev.2.00 Sep 07, 2005
Application
High speed power switching
0.1
0.05 0.02
ls 1 0.0 t Pu o h 1S e
1.0
TC = 25°C
θch–c (t) = γS (t) • θch–c θch–c = 2.50°C/W, TC = 25°C PDM PW D = PW T
0.
0.01 10 µ
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3 0.1 0.2
50 Pulse Test 40
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50 Pulse Test 20 10 5 VGS = 10 V 15 V
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage VDS (V)

2SK2608中文资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)2SK2608Switching Regulator Applicationsz Low drain −source ON resistance : R DS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Y fs |= 2.6 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 720 V) z Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 900 VDrain −gate voltage (R GS = 20 k Ω) V DGR 900 V Gate −source voltage V GSS ±30 V DC (Note 1) I D 3 A Drain currentPulse (Note 1)I DP 9A Drain power dissipation (Tc = 25°C)P D 100 WSingle pulse avalanche energy(Note 2) E AS 295mJ Avalanche currentI AR 3 ARepetitive avalanche energy (Note 3) E AR 10.0 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch −c) 1.25 °C / W Thermal resistance, channel to ambientR th (ch −a)83.3°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 60.0 mH, R G = 25 Ω, I AR = 3 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC TO-220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 2.0 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage currentI GSS V GS = ±30 V, V DS = 0 V — — ±10μA Gate −source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cut −off currentI DSS V DS = 720 V, V GS = 0 V — — 100μA Drain −source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 900 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 1.5 A— 3.73 4.3 Ω Forward transfer admittance |Y fs | V DS = 20 V, I D = 1.5 A0.652.6—SInput capacitanceC iss — 750 —Reverse transfer capacitance C rss — 10 — Output capacitanceC ossV DS = 25 V, V GS = 0 V, f = 1 MHz — 70 —pF Rise timet r — 15 —Turn −on timet on — 55 —Fall timet f — 30 — Switching timeTurn −off timet off— 110 —nsTotal gate charge (gate −sourceplus gate −drain) Q g —25 — Gate −source charge Q gs — 13 — Gate −drain (“miller”) ChargeQ gdV DD ≈ 400 V, V GS = 10 V, I D = 3 A — 12 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1)I DR —— — 3 A Pulse drain reverse current(Note 1) I DRP —— — 9 A Forward voltage (diode) V DSF I DR = 3 A, V GS = 0 V——−1.9VReverse recovery time t rr — 1200 — ns Reverse recovery chargeQ rrI DR = 3 A, V GS = 0 V, dI DR / dt = 100 A / μs— 8.5 — μCMarkinglead (Pb)-free package or lead (Pb)-free finish.K2608⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD VDSS VDSS AS V B B I L 21E 2R G = 25 ΩV DD = 90 V , L = 60 mHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SK2551_06资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)2SK2551Chopper Regulator, DC −DC Converter and Motor Drive Applicationsz Low drain −source ON resistance : R DS (ON) = 7.2 m Ω (typ.) z High forward transfer admittance : |Y fs | = 50 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 50 V) z Enhancement mode : V th = 1.5~3.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 50 VDrain −gate voltage (R GS = 20 k Ω) V DGR 50 VGate −source voltage V GSS ±20 VDC (Note 1) I D 50 A Drain currentPulse (Note 1)I DP 200A Drain power dissipation (Tc = 25°C)P D150 WSingle pulse avalanche energy(Note 2) E AS 894mJ Avalanche currentI AR 50 ARepetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch −c)0.833°C / W Thermal resistance, channel to ambientR th (ch −a) 50°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 25 V, T ch = 25°C (initial), L = 440 μH, R G = 25 Ω, I AR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mm1. GATE2. DRAIN (HEAT SINK)3. SOURCEJEDEC ― JEITA ―TOSHIBA 2-16C1BWeight: 4.6 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V — — ±10μA Drain cut −off currentI DSS V DS = 50 V, V GS = 0 V — — 100μA Drain −source breakdown voltage V (BR) DSSI D = 10 mA, V GS = 0 V 50 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 1.5 — 3.0 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 25 A— 7.2 11 m Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 25 A3050—SInput capacitanceC iss — 4000 —Reverse transfer capacitance C rss — 800 — Output capacitanceC ossV DS = 10 V, V GS = 0 V, f = 1 MHz — 2000 —pF Rise timet r — 25 —Turn −on timet on — 40 —Fall timet f — 120 —Switching timeTurn −off timet off— 360 —nsTotal gate charge (Gate −sourceplus gate −drain) Q g —130 — Gate −source charge Q gs — 90 — Gate −drain (“miller”) chargeQ gdV DD ≈ 40 V, V GS = 10 V, I D = 50 A — 40 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1) I DR —— — 50 A Pulse drain reverse current(Note 1) I DRP — — — 200 A Forward voltage (diode) V DSFI DR = 50 A, V GS = 0 V — — −1.7VReverse recovery time t rr — 140 — ns Reverse recovered chargeQ rrI DR= 50 A, V GS= 0 V dI DR / dt = 50 A / μs— 77 — μCMarkingK2551lead (Pb)-free package or lead (Pb)-free finish.⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD VDSS VDSS B I L 1AS E 2R G = 25 ΩV DD = 25 V , L = 440 μHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SK3557-6-TB-E;中文规格书,Datasheet资料

No.7169-1/6Applications• AM tuner RF ampli ﬁ cation • Low noise ampli ﬁ erFeatures•Large | yfs | • Small Ciss• Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer• Ultralow noise ﬁgureSpeci ﬁ cationsAbsolute Maximum Ratingsat Ta=25°CParameterSymbol ConditionsRatingsUnit Drain-to-Source Voltage V DSX15V Gate-to-Drain Voltage V GDS --15V Gate Current I G 10mA Drain CurrentI D 50mA Allowable Power Dissipation P D 200mW Junction Temperature Tj 150°C Storage TemperatureTstg--55 to +150°CPackage Dimensionsunit : mm (typ)7013A-01162012 TKIM/60502 TSIM TA-36222SK3557N-Channel Junctin Silicon FETHigh-Frequency Low-NoiseAmpli ﬁ er ApplicationsProduct & Package Information• Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reelPacking Type: TL MarkingElectrical ConnectionTBIRLOT No.RANKLOT No.Electrical Characteristics at Ta=25°CParameterSymbol ConditionsRatingsUnit min typmaxGate-to-Drain Breakdown Voltage V (BR)GDS I G =--10μA, V DS =0V --15V Gate Cutoff Current I GSS V GS =--10V , V DS =0V --1.0nA Cutoff Voltage V GS (off)V DS =5V , I D =100μA --0.3--0.7--1.5V Drain CurrentI DSS V DS =5V , V GS =0V 10*32*mA Forward Transfer Admittance | yfs |V DS =5V , V GS =0V , f=1kHz 2435mS Input CapacitanceCiss V DS =5V , V GS =0V , f=1MHz 10.0pF Reverse Transfer Capacitance Crss V DS =5V , V GS =0V , f=1MHz 2.9pF Noise FigureNFV DS =5V , R g =1k Ω, I D =1mA, f=1kHz1.0dB* : The 2SK3557 is classi ﬁed by I DSSas follows : (unit : mA)Rank67I DSS10.0 to 20.016.0 to 32.0Ordering InformationDevicePackage Shipping memo 2SK3557-6-TB-E CP 3,000pcs./reel Pb Free2SK3557-7-TB-ECP3,000pcs./reelIT04224ITR02752ITR02749ITR027500222018161412108642Drain-to-Source V oltage, V DS -- VDrain-to-Source V oltage, V DS -- VD r a i n C u r r e n t , I D -- m AD r a i n C u r r e n t , I D -- m AGate-to-Source V oltage, V GS -- V D r a i n C u r r e n t , I D -- m AGate-to-Source V oltage, V GS -- VD r a i n C u r r e n t , I D -- m AITR02759ITR02760IT04229ITR02758101.0101.00.010.11.0101000.11.0101001000Drain-to-Source V oltage, V DS -- VR e v e r s e T r a n s f e r C a p a c i t a n c e , C r s s -- p FFrequency, f -- kHzN o i s e F i g u r e , N F -- d BSignal Source Resistance, Rg -- k ΩN o i s e F i g u r e , N F -- d BAmbient Temperature, Ta -- °CA l l o w a b l e P o w e r D i s s i p a t i o n , P D -- m WIT04227IT04228101.0 1.01010Drain Current, I DSS -- mAC u t o f f V o l t a g e , V G S (o f f ) -- VDrain-to-Source V oltage, V DS -- VI n p u t C a p a c i t a n c e , C i s s -- p FIT04225IT0422610 1.0101010100Drain Current, I D -- mADrain Current, I DSS -- mAF o r w a r d T r a n s f e r A d m i t t a n c e , | y f s | -- m SF o r w a r d T r a n s f e r A d m i t t a n c e , | y f s | -- m SEmbossed Taping Speciﬁ cation2SK3557-6-TB-E, 2SK3557-7-TB-EOutline Drawing Land Pattern Example 2SK3557-6-TB-E, 2SK3557-7-TB-EMass (g)Unit0.013 * For reference mmUnit: mm0.950.951.2.40.8This catalog provides information as of June, 2012. Speciﬁ cations and information herein are subject to change without notice.分销商库存信息: ONSEMI2SK3557-6-TB-E。

2SK2806-01中文资料

Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
1
↑ 2
↑ 3
ID [A]
RDS(ON) [mΩ]
ID [A]
→ VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑ 4
↑ 5
↑ 6
VGS(th) [V]
gfs [S]
RDS(ON) [mΩ]
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑ 7
→ ID [A]
Typical Gate Charge Characteristic
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
ID [A]
EAV [mJ]
→ starting Tch [°C]
→ VDS [V]
This specification is subject to change without notice!
V DS ID I D(puls) V GS E AV PD T ch T stg
30
V
35
A
140
A
±16
V
129,3
mJ*
30
W
150
°C
-55 ~ +150
°C

2SK3826资料

5 3
VDS=10V
Forward Current, IF -- A
2 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2
= Tc
--2
°C 25 5°C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3
75
°C
3
5
7 10
2
3
5
7
Tc=75 °C
Drain Current, ID -- A
IT08874
Drain-to-Source Voltage, VDS -- V
No.8243-3/4
元器件交易网
2SK3826
10 9
VGS -- Qg
VDS=50V ID=26A
Drain Current, ID -- A
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 26 104 1.75 45 150 --55 to +150 80 26 Unit V V A A W W °C °C mJ A

2SC3688资料

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
ICES VCEO(sus)
IEBO VCE(sat) VBE(sat)
hFE tstg
tf
VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=8A, IB=2.0A IC=8A, IB=2.0A VCE=5V, IC=1.0A IC=6A, IB1=1.2A, IB2=–2.4A IC=6A, IB1=1.2A, IB2=–2.4A

2SK3668-ZK中文资料

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.DATA SHEETDocument No. D16547EJ2V0DS00 (2nd edition)Date Published April 2003 NS CP(K)Printed in Japan2002The mark 5 shows major revised points.DESCRIPTIONThe 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive.FEATURES• Low gate chargeQ G = 26 nC TYP. (V DD = 320 V, V GS = 10 V, I D = 10 A)• Gate voltage rating: ±30 V • Low on-state resistanceR DS(on) = 0.55 Ω MAX. (V GS = 10 V, I D = 5.0 A)• Surface mount package availableABSOLUTE MAXIMUM RATINGS (T A = 25°C)Drain to Source Voltage (V GS = 0 V)V DSS 400V Gate to Source Voltage (V DS = 0 V)V GSS ±30V Drain Current (DC) (T C = 25°C)I D(DC)±10A Drain Current (pulse)Note1I D(pulse)±34A Total Power Dissipation (T A = 25°C)P T1 1.5W Total Power Dissipation (T C = 25°C)P T2100W Channel Temperature T ch 150°C Storage Temperature T stg–55 to +150°C Single Avalanche Current Note2I AS 10A Single Avalanche EnergyNote2E AS8mJNotes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%2. Starting T ch = 25°C, V DD = 150 V, R G = 25 Ω, V GS = 20 → 0 V, L = 100 µHTHERMAL RESISTANCEChannel to Case Thermal Resistance R th(ch-C) 1.25°C/W Channel to Ambient Thermal ResistaneR th(ch-A)83.3°C/WORDERING INFORMATIONPART NUMBER PACKAGE 2SK3668-ZKTO-263 (MP-25ZK)(TO-263)55Data Sheet D16547EJ2V0DS2ELECTRICAL CHARACTERISTICS (T A = 25°C)CHARACTERISTICSSYMBOL TEST CONDITIONSMIN.TYP.MAX.UNITZero Gate Voltage Drain Current I DSS V DS = 400 V, V GS = 0 V 100µA Gate Leakage Current I GSS VGS = ±30 V, V DS = 0 V ±100nA Gate Cut-off VoltageV GS(off)V DS = 10 V, I D = 1.0 mA 2.5 3.5V Forward Transfer AdmittanceNote | y fs|V DS = 10 V, I D = 5.0 A 3.05.6SDrain to Source On-state Resistance NoteR DS(on)V GS = 10 V, I D = 5.0 A 0.400.55ΩInput Capacitance C iss V DS = 10 V 1320pF Output CapacitanceC oss V GS = 0 V 230pF Reverse Transfer Capacitance C rss f = 1.0 MHz13pF Turn-on Delay Time t d(on)V DD = 150 V, I D = 5.0 A 18ns Rise Timet r VGS = 10 V 8ns Turn-off Delay Time t d(off)R G = 10 Ω44ns Fall Timet f 4ns Total Gate Charge Q G V DD = 320 V 26nC Gate to Source Charge Q GS V GS = 10 V 7nC Gate to Drain Charge Q GDI D = 10 A11nC Body Diode Forward Voltage NoteV F(S-D)I F = 10 A, V GS = 0 V 0.90V Reverse Recovery Time t rr I F = 10 A, V GS = 0 V 350nsReverse Recovery ChargeQ rrdi/dt = 100 A/µs2.7µCNote Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2%TEST CIRCUIT 1 AVALANCHE CAPABILITYV GS = 20 →DDTEST CIRCUIT 3 GATE CHARGETEST CIRCUIT 2 SWITCHING TIMEV LDDτ = 1 sµDuty Cycle ≤ 1%L DD55Data Sheet D16547EJ2V0DS3TYPICAL CHARACTERISTICS (T A = 25°C)DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREATOTAL POWER DISSIPATION vs.CASE TEMPERATUREd T - Pe r c e n t a g e of R a t e d P o w e r -%T C - Case Temperature - °C P T - T o t a l P o w e r D i s s i p a t i o n -WT C - Case Temperature - °CFORWARD BIAS SAFE OPERATING AREAI D - D r a i n C u r r e n t - AV DS - Drain to Source Voltage - VTRANSIENT THERMAL RESISTANCE vs. PULSE WIDTHR t h (t ) - T r a n s i e n t T h e rm a l R e s i s t a n c e - °C /WPW - Pulse Width - s55Data Sheet D16547EJ2V0DS4DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEFORWARD TRANSFER CHARACTERISTICSI D - D r a i n C u r r e n t - AV DS - Drain to Source Voltage - V I D - D r a i n C u r r e n t - AV GS - Gate to Source Voltage - VGATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATUREFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTV G S (o f f ) - G a t e C u t -o f f V o l t a g e - VT ch - Channel Temperature - °C | y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e -SI D - Drain Current - ADRAIN TO SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENTDRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGER D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - ΩI D - Drain Current - AR D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - ΩV GS - Gate to Source Voltage - VData Sheet D16547EJ2V0DS5DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURECAPACITANCE vs. DRAIN TO SOURCE VOLTAGER D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - ΩT ch - Channel Temperature - °C C i s s , C o s s , C r s s - C a p a c i t a n c e - p FV DS - Drain to Source Voltage - VSWITCHING CHARACTERISTICSDYNAMIC INPUT/OUTPUT CHARACTERISTICSt d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n sI D - Drain Current - A V D S - D r a i n t o S o u r c e V o l t a g e - VQ G - Gate Charge - nCV G S - G a t e t o S o u r c e V o l t a g e - VSOURCE TO DRAIN DIODE FORWARD VOLTAGEREVERSE RECOVERY TIME vs.DIODE FORWARD CURRENTI F - D i o d e F o r w a r d C u r r e n t - AV F(S-D) - Source to Drain Voltage - Vt r r - R e v e r s e R e c o v e r y T i m e - n sI F - Diode Forward Current - AData Sheet D16547EJ2V0DS6SINGLE AVALANCHE CURRENT vs.SINGLE AVALANCHE ENERGY DERATING FACTORI A S - S i n g l e A v a l a n c h e C u r r e n t - AL - Inductive Load - HE n e r g y D e r a t i n gF a c t o r - %Starting T ch - Starting Channel Temperature - °C5Data Sheet D16547EJ2V0DS7PACKAGE DRAWING (Unit: mm)TO-263 (MP-25ZK)EQUIVALENT CIRCUITBody DiodeRemark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimatelydegrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific".The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application.The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application.(Note)••••••M8E 02. 11-1(1)(2)"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes itsmajority-owned subsidiaries."NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (asdefined above).Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support).Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc."Standard":"Special":"Specific":。

2SK2736资料

Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

2SK213中文资料

Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs. Frequency 500 100
10
TC = 25°C VDS = 20 V ID = 10 mA
1.0
0.1 0.05 5 k 10 k
1M 10 M 100 k Frequency f (HZ)
1
Symbol VDSX
Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150
Unit V
V mA mA W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol V(BR)DSX Min 140 160 180 200 ±15 0.2 — 20 — — Typ — — — — — — — 40 90 2.2 Max — — — — — 1.5 2.0 — — — Unit V V V V V V V mS pF pF I G = ±10 µA, VDS = 0 I D = 10 mA, VDS = 10 V *1 I D = 10 mA, VGD = 0 *1 I D = 10 mA, VDS = 20 V *1 I D = 10 mA, VDS = 10 V, f = 1 MHz Test conditions I D = 1 mA, VGS = –2 V

2SK1618S中文资料

2SK1618(L), 2SK1618(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures• Low on-resistance• High speed switching• Low drive current• No secondary breakdown• Suitable for switching regulator and DC-DC converterOutline2SK1618(L), 2SK1618(S)2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DSS 600V Gate to source voltage V GSS ±30V Drain current I D3A Drain peak currentI D(pulse)*16A Body to drain diode reverse drain current I DR 3A Channel dissipation Pch*230W Channel temperature Tch 150°C Storage temperatureTstg–55 to +150°CNotes 1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at T C = 25°C2SK1618(L), 2SK1618(S)3Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Drain to source breakdown voltageV (BR)DSS 600——V I D = 10 mA, V GS = 0Gate to source breakdown voltageV (BR)GSS ±30——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS ——±10µA V GS = ±25 V, V DS = 0Zero gate voltage drain current I DSS——250µA V DS = 500 V, V GS = 0Gate to source cutoff voltage V GS(off) 2.0— 3.0V I D = 1 mA, V DS = 10 V Static Drain to source on state resistanceR DS(on)— 3.8 5.0ΩI D = 1 A, V GS = 10 V *1Forward transfer admittance |yfs| 1.2 2.0—S I D = 1 A, V DS = 10 V *1Input capacitance Ciss —295—pF V DS = 10 V, V GS = 0,Output capacitanceCoss —70—pF f = 1 MHzReverse transfer capacitance Crss —12—pF Turn-on delay time t d(on)—8—ns I D = 1 A, V GS = 10 V,Rise timet r —25—ns R L = 30 ΩTurn-off delay time t d(off)—65—ns Fall timet f —30—ns Body to drain diode forward voltageV DF —0.9—V I F = 2 A, V GS = 0Body to drain diode reverse recovery time t rr—220—nsI F = 2 A, V GS = 0,di F /dt = 100 A/µs Note1.Pulse testSee characteristic curves of 2SK1572.2SK1618(L), 2SK1618(S)4Hitachi CodeJEDECEIAJWeight (reference value)LDPAK (L)——1.4 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SA系列(PNP型)三极管参数表

型号
厂商
特性用途
集电极最大直流耗散功率Pcm(W)
集电极最大允许直流电流Icm(A)
集电极-基极击穿电压BVcbo(V)
集电极-发射极击穿电压BVceo(V)
特征频率ft(Hz)
放大倍数
国内外代换型号
2SA0683
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1383
1
-1.5
-30
60M
70-240
3CA10D
2SA1013
长电
硅PNP三极管,TO-92，放大
900m
-1
-160
-160
20M
40-310
3CA3F
2SA1013H
TOSHIBA
硅PNP三极管,TO-92，音频放大,彩色电视机场输出，配对管2SC2383
900m
-1
-160
-160
15M
60-200
3CA3F
2SA1013T
2SA1039
硅PNP三极管
300m
-50m
-80
140
820
3CG170C
2SA104
硅PNP三极管,高频射频放大
60m
-10m
-40
50M
30-250
3AG95A
2SA1040
硅PNP三极管
100
-120
60M
2SA1041
硅PNP三极管
100
-120
60M
2SA1042
硅PNP三极管
100
-70
硅PNP三极管,一般放大，配对管2SC1473
750m
-70m
-250

2SK2996中文资料

Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
20070701-EN
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V GS =-30V T ch 150°C L=1.74mH V CC =60V *1VDS 600V *2T a=25°C Tc=25°CItemSymbol Ratings Unit Remarks Drain-source voltage V DS 600V DSX 600Continuous drain current I D ±16Pulsed drain current I D(puls]±64Gate-source voltage V GS ±30Non-RepetitiveI AS 16Maximum avalanche current Non-RepetitiveE AS 242.7Maximum avalanche energy Maximum Drain-Source dV/dt dV DS /dt 20Peak diode recovery dV/dt dV/dt 5Max. power dissipation P D 2.02270Operating and storage T ch +150temperature rangeT stgElectrical characteristics (T c =25°C unless otherwise specified)2SK3686-01FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFeaturesHigh speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proofApplicationsSwitching regulators DC-DC converters Maximum ratings and characteristic Absolute maximum ratings(Tc=25°C unless otherwise specified)Zero gate voltage drain current I DSS V DS =600V V GS =0V V DS =480V V GS =0V V GS =±30V I D =8A V GS =10V I D =8A V DS =25V V CC =300V I D =8A V GS =10V R GS =10 ΩMin. Typ. Max. UnitsV V µA nA ΩS pFnCA V µs µCnsSymbol V (BR)DSS V GS(th)I GSS R DS(on)g fs C iss C oss C rss td (on)t rtd (off)t f Q G Q GS Q GD I AV V SD t rr Q rrItemDrain-source breakdown voltaget Gate threshold voltage Gate-source leakage currentDrain-source on-state resistance Forward transcondutance Input capacitance Output capacitanceReverse transfer capacitance Turn-on time t on Turn-off time t offTotal Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capabilityDiode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D = 250µA V GS =0V I D = 250µA V DS =V GS T ch =25°C T ch =125°C V DS =0V V DS =25V V GS =0V f=1MHzV CC =300V I D =16A V GS =10VL=1.74mH T ch =25°CI F =16A V GS =0V T ch =25°C I F =16A V GS =0V-di/dt=100A/µs T ch =25°CV V A A VA mJ kV/skV/µs W °C °C6003.05.025*********.420.576.513159023902003008122943.516245887812345112181015161.00 1.500.687.8-55 to +150Outline Drawings [mm]Super FAP-G Series200311<=<=*1 See to Avalanche Energy Graph*2 I F -I D , -di/dt=50A/µs, V CC BV DSS , Tch 150°C <=<=<=Characteristics4812162024010203040507V20V 10V 8V 6.5VVGS=6.0VI D [A ]VDS [V]Typical Output CharacteristicsID=f(VDS):80 µs pulse test,Tch=25 °C2550751001251500100200300400P D [W ]Tc [°C]0123456789100.1110100I D [A ]VGS[V]0.11101000.1110100g f s [S ]ID [A]Typical Transconductancegfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C01020300.00.10.20.30.40.50.60.70.80.91.0 R D S (o n ) [Ω ]ID [A]Typical Drain-Source on-state Resistance-50-252550751001251500.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.5R D S (o n ) [ Ω ]Tch [°C]Drain-Source On-state Resistance-50-252550751001251500.00.51.01.52.02.53.03.54.04.55.05.56.06.57.0Gate Threshold Voltage vs. TchV G S (t h ) [V ]Tch [°C]1020304050602468101214Qg [nC]V G S [V ]1010110210310C [p F ]VDS [V]Typical Capacitance0.000.250.500.75 1.00 1.25 1.50 1.75 2.00 2.25 2.500.1110100I F [A ]VSD [V]Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C10-11010110210101102103t [n s ]ID [A]02550751001251500100200300400500600700E A V [m J ]starting Tch [°C]Maximum Avalanche Energy vs. starting Tchhttp://www.fujielectric.co.jp/fdt/scd/10-810-710-610-510-410-310-210101010A v a l a n c h e C u r r e n t I A V [A ]t AV [sec]10-610-510-410-310-210-11010-310-210-110101Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0Z t h (c h -c ) [°C /W ]t [sec]。