BZX84C 20中文资料

BZX84C16LT1G中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C 12中文资料

NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
VZ
(V) MAX 2.9 3.3 3.5 4.0 4.7 5.3 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.0 15.5 17 19 21.1 23.2 25.5
ZZ
(Ω) 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 MIN 3.6 3.9 4.1 4.4 4.5 5.0 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.5 13.9 15.4 16.9 18.9 20.9 22.9
ZZ
(Ω ) 45 50 55
VF
Foward Voltage = 0.9 V Maximum @ IF = 10 mA for all BZX 84 series
*Capacitance @ VR = 0.0 volts; Frequency = 1.0 megahertz.
Device
BZX84C 3V3 BZX84C 3V6 BZX84C 3V9 BZX84C 4V3 BZX84C 4V7 BZX84C 5V1 BZX84C 5V6 BZX84C 6V2 BZX84C 6V8 BZX84C 7V5 BZX84C 8V2 BZX84C 9V1 BZX84C 10 BZX84C 11 BZX84C 12 BZX84C 13 BZX84C 15 BZX84C 16 BZX84C 18 BZX84C 20 BZX84C 22 BZX84C 24

DIODES BZX84C2V4TS - BZX84C39TS 数据手册

BZX84C2V4TS - BZX84C39TSTRIPLE SURFACE MOUNT ZENER DIODEARRAYFeatures•Zener Voltages from 2.4 - 39V•Three Isolated Diode Elements in a Single Ultra-Small Surface Mount Package•Lead Free/RoHS Compliant (Note 5)•Case: SOT-363•Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0•Moisture Sensitivity: Level 1 per J-STD-020C •Terminals: Solderable per MIL-STD-202, Method 208•Lead Free Plating (Matte Tin Finish annealed over Alloy 42leadframe).•Orientation: See Diagram•Marking: Date Code and Marking Code (See Page 2)•Weight: 0.006 grams (approximate)Mechanical DataMaximum Ratings@ T A = 25°C unless otherwise specified* Add “-7-F” to the appropriate type number in Table 1 from Sheet 2 example: 6.2V Zener = BZX84C6V2TS-7-F.Notes: 1. Mounted on FR4 PC Board with recommended pad layout which can be found on our website at /datasheets/ap02001.pdf.2. Short duration test pulse used to minimize self-heating effect.3. f = 1KHz.4. For Packaging Details, got to our website at /datasheets/ap02007.pdf.5. No purposefully added lead.Ordering Information(Note 4)Lead-free查询BZX84C18TS-7-F供应商Electrical Characteristics @ T A = 25°C unless otherwise specifiedNotes: 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1KHz.Marking InformationDate Code KeyKXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002M = Month ex: 9 = September0102030I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 3. Zener Breakdown Characteristics10203040C , T O T A L C A P A C I T A N C E (p F )T 101001000101001V , NOMINAL ZENER VOLTAGE (V)ZFig. 4. Total Capacitance vs Nominal Zener Voltage102030405012345678910I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)ZFig. 2. Zener Breakdown CharacteristicsT , AMBIENT TEMPERATURE, °C A Fig. 1. Power Derating CurveP , P O W E RD I S S I P A T I O N (m W )D 2001000300100200IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

BZX84J-B24资料

BZX84J Sel Working
-xxx
voltage
Differential resistance
Reverse current
VZ (V)
rdif (Ω)
IR (µA)
Temperature coefﬁcient
SZ (mV/K)
IZ = 5 mA Min Max
2V4
B
2.35 2.45
C
Symbol Parameter
Conditions
Min
IF
forward current
-
IZSM
non-repetitive peak reverse
[1] -
current
PZSM
Ptot Tj Tamb Tstg
non-repetitive peak reverse power dissipation total power dissipation junction temperature ambient temperature storage temperature
[1]
1
2
Symbol
1
2
006aaa152
元器件交易网
NXP Semiconductors
BZX84J series
Single Zener diodes
3. Ordering information
4. Marking
Table 3. Ordering information
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise speciﬁed.

安森美 BZX84C2V4LT1 D 250 mW SOT-23 表面贴装稳压二极管数据手册说明书

DATA SHEET Zener Voltage Regulators250 mW SOT−23 Surface MountBZX84BxxxLT1G,BZX84CxxxLT1G Series, SZBZX84BxxxLT1G,SZBZX84CxxxLT1G SeriesThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards.Features•250 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V •Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (> 16 kV) per Human Body Model •Tight Tolerance Series Available (See Page 4)•SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free and are RoHS CompliantMechanical CharacteristicsCASE:V oid-free, transfer-molded, thermosetting plastic case FINISH:Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 SecondsPOLARITY:Cathode indicated by polarity band FLAMMABILITY RATING:UL 94 V−0*For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.Device Package Shipping†ORDERING INFORMATIONSee specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.BZX84CxxxLT1G SOT−23(Pb−Free)3,000 /Tape & ReelBZX84BxxxLT1G SOT−23(Pb−Free)3,000 /Tape & Reel BZX84CxxxLT3G10,000 /Tape & ReelBZX84BxxxLT3G10,000 /Tape & ReelSOT−23(Pb−Free)SOT−23(Pb−Free)SOT−23CASE 318STYLE 831MARKING DIAGRAM1XXXM GGXXX= Device CodeM= Date Code*G= Pb−Free Package*Date Code orientation may vary dependingupon manufacturing location.(Note: Microdot may be in either location)SZBZX84BxxxLT1G SOT−23(Pb−Free)3,000 /Tape & Reel SZBZX84CxxxLT3G10,000 /Tape & ReelSOT−23(Pb−Free)SZBZX84CxxxLT1G SOT−23(Pb−Free)3,000 /Tape & ReelSZBZX84BxxxLT3G10,000 /Tape & ReelSOT−23(Pb−Free)MAXIMUM RATINGSRating Symbol Max UnitTotal Power Dissipation on FR−5 Board, (Note 1) @ T A = 25°CDerated above 25°CThermal Resistance, Junction−to−AmbientP DR q JA2502.0500mWmW/°C°C/WTotal Power Dissipation on Alumina Substrate, (Note 2) @ T A = 25°C Derated above 25°CThermal Resistance, Junction−to−AmbientP DR q JA3002.4417mWmW/°C°C/WJunction and Storage Temperature Range T J, T stg−65 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.ELECTRICAL CHARACTERISTICS(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F= 10 mA) Symbol ParameterV Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentZ ZT Maximum Zener Impedance @ I ZTI R Reverse Leakage Current @ V RV R Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FQ V Z Maximum Temperature Coefficient of V ZC Max. Capacitance @ V R = 0 and f = 1 MHzELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are onsemi Preferred devices.)Device*DeviceMarkingV Z1 (Volts)@I ZT1=5mA(Note 3)Z ZT1(W)@ I ZT1 =5 mAV Z2 (V)@I ZT2=1mA(Note 3)Z ZT2(W)@ I ZT2 =1 mAV Z3 (V)@I ZT3=20mA(Note 3)Z ZT3(W)@ I ZT3 =20 mAMax ReverseLeakageCurrentq VZ(mV/k)@ I ZT1 = 5 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV RVoltsI Rm A@Min MaxBZX84C2V4LT1G Z11 2.2 2.4 2.6100 1.7 2.1600 2.6 3.250501−3.50450 BZX84C2V7LT1G Z12 2.5 2.7 2.9100 1.9 2.46003 3.650201−3.50450 BZX84C3V0LT1G Z13 2.83 3.295 2.1 2.7600 3.3 3.950101−3.50450 BZX84C3V3LT1G Z14 3.1 3.3 3.595 2.3 2.9600 3.6 4.24051−3.50450 BZX84C3V6LT1G Z15 3.4 3.6 3.890 2.7 3.3600 3.9 4.54051−3.50450 BZX84C3V9LT1G Z16 3.7 3.9 4.190 2.9 3.5600 4.1 4.73031−3.5−2.5450 BZX84C4V3LT1G W94 4.3 4.690 3.34600 4.4 5.13031−3.50450 BZX84C4V7LT1/T3G Z1 4.4 4.7580 3.7 4.7500 4.5 5.41532−3.50.2260 BZX84C5V1LT1/T3G Z2 4.8 5.1 5.460 4.2 5.34805 5.91522−2.7 1.2225 BZX84C5V6LT1/T3G Z3 5.2 5.6640 4.86400 5.2 6.31012−2.0 2.5200 BZX84C6V2LT1/T3G Z4 5.8 6.2 6.610 5.6 6.6150 5.8 6.86340.4 3.7185 BZX84C6V8LT1/T3G Z5 6.4 6.87.215 6.37.280 6.47.4624 1.2 4.5155 BZX84C7V5LT1G Z677.57.915 6.97.98078615 2.5 5.3140 BZX84C8V2LT1G Z77.78.28.7157.68.7807.78.860.75 3.2 6.2135 BZX84C9V1LT1/T3G Z88.59.19.6158.49.61008.59.780.56 3.87.0130 BZX84C10LT1G Z99.41010.6209.310.61509.410.7100.27 4.58.0130 BZX84C11LT1G Y110.41111.62010.211.615010.411.8100.18 5.49.0130 BZX84C12LT1G Y211.41212.72511.212.715011.412.9100.18 6.010.0130 BZX84C13LT1G Y312.41314.13012.31417012.514.2150.187.011.0120 BZX84C15LT1/T3G Y413.81515.63013.715.520013.915.7200.0510.59.213.0110 BZX84C16LT1G Y515.31617.14015.21720015.417.2200.0511.210.414.0105 BZX84C18LT1/T3G Y616.81819.14516.71922516.919.2200.0512.612.416.0100 BZX84C20LT1G Y718.82021.25518.721.122518.921.4200.051414.418.085 BZX84C22LT1G Y820.82223.35520.723.225020.923.4250.0515.416.420.085 BZX84C24LT1G Y922.82425.67022.725.525022.925.7250.0516.818.422.080Device*DeviceMarkingV Z1 Below@I ZT1=2mA Z ZT1Below@ I ZT1 =2 mAV Z2 Below@I ZT2=0.1m-A Z ZT2Below@ I ZT4 =0.5 mAV Z3 Below@I ZT3=10mA Z ZT3Below@ I ZT3 =10 mAMax ReverseLeakageCurrentq VZ(mV/k) Below@ I ZT1 = 2 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV R(V)I Rm A@Min MaxBZX84C27LT1G Y1025.12728.9802528.930025.229.3450.0518.921.425.370 BZX84C30LT1G Y112830328027.83230028.132.4500.052124.429.470 BZX84C33LT1/T3G Y123133358030.83532531.135.4550.0523.127.433.470 BZX84C36LT1G Y133436389033.83835034.138.4600.0525.230.437.470 BZX84C39LT1G Y1437394113036.74135037.141.5700.0527.333.441.245 BZX84C43LT1G Y1540434615039.74637540.146.5800.0530.137.646.640 BZX84C47LT1G Y1644475017043.75037544.150.5900.0532.942.051.840 BZX84C51LT1G Y1748515418047.65440048.154.61000.0535.746.657.240 BZX84C56LT1G Y1852566020051.56042552.160.81100.0539.252.263.840 BZX84C62LT1G Y1958626621557.46645058.2671200.0543.458.871.635 BZX84C68LT1G Y2064687224063.47247564.273.21300.0547.665.679.835 BZX84C75LT1G Y2170757925569.47950070.380.21400.0552.573.488.635 3.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.*Includes SZ-prefix devices where applicable.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)DeviceDeviceMarkingV Z (Volts) @ I ZT = 5 mA(Note 4)Z ZT (W) @I ZT = 5 mA(Note 4)Max ReverseLeakageCurrent q VZ(mV/k)@ I ZT = 5 mA C (pF)@ V R=0,f = 1 MHzI R@V RMin Nom Max Max m A Volts Min MaxBZX84B3V3LT1G T2A 3.23 3.3 3.379551−3.50450 BZX84B4V7LT1G T10 4.61 4.7 4.798032−3.50.2260 BZX84B5V1LT1G T11 5.00 5.1 5.206022−2.7 1.2225 BZX84B5V6LT1G T12 5.49 5.6 5.714012−2 2.5200 BZX84B6V2LT1G T13 6.08 6.2 6.3210340.4 3.7185 BZX84B6V8LT1G T14 6.66 6.8 6.941524 1.2 4.5155 BZX84B7V5LT1G T157.357.57.651515 2.5 5.3140 BZX84B8V2LT1G T168.048.28.36150.75 3.2 6.2135 BZX84B9V1LT1G, T3G T178.929.19.28150.56 3.87130 BZX84B10LT1G T2E9.81010.2200.27 4.58130 BZX84B12LT1G T1811.81212.2250.18610130 BZX84B15LT1G T2214.71515.3300.0510.59.213110 BZX84B16LT1G T1915.71616.3400.0511.210.414105 BZX84B18LT1G T2017.61818.4450.0512.612.416100 BZX84B22LT1G T2421.62222.4550.0515.416.42085 BZX84B24LT1G T2523.52424.5700.0516.818.42280 4.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Device*DeviceMarkingV Z (Volts) @ I ZT = 2 mA(Note 4)Z ZT (W) @I ZT = 2 mA(Note 4)Max ReverseLeakageCurrent q VZ(mV/k)@ I ZT = 2 mA C (pF)@ V R=0,f = 1 MHzI R@V RMin Nom Max Max m A Volts Min MaxBZX84B27LT1G T2726.52727.5800.0518.921.425.370 *Includes SZ-prefix devices where applicable.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)- 3- 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()ΩV F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z EN E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )μV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)SOT −23 (TO −236)CASE 318−08ISSUE ASDATE 30 JAN 2018SCALE 4:11XXXM G G XXX = Specific Device Code M = Date Code G = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.SOLDERING FOOTPRINTDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.000b 0.370.440.500.015c 0.080.140.200.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOM MAX L1STYLE 22:PIN 1.RETURN2.OUTPUT3.INPUT STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 7:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODESTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE STYLE 10:PIN 1.DRAIN2.SOURCE3.GATE STYLE 11:PIN 1.ANODE 2.CATHODE 3.CATHODE −ANODE STYLE 12:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 13:PIN 1.SOURCE2.DRAIN3.GATESTYLE 14:PIN 1.CATHODE2.GATE3.ANODESTYLE 15:PIN 1.GATE2.CATHODE3.ANODE STYLE 16:PIN 1.ANODE2.CATHODE3.CATHODE STYLE 17:PIN 1.NO CONNECTION2.ANODE3.CATHODE STYLE 18:PIN 1.NO CONNECTION 2.CATHODE 3.ANODE STYLE 19:PIN 1.CATHODE 2.ANODE 3.CATHODE −ANODE STYLE 23:PIN 1.ANODE2.ANODE3.CATHODESTYLE 20:PIN 1.CATHODE2.ANODE3.GATE STYLE 21:PIN 1.GATE2.SOURCE3.DRAIN STYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1.GATE2.DRAIN3.SOURCESTYLE 25:PIN 1.ANODE2.CATHODE3.GATESTYLE 26:PIN 1.CATHODE2.ANODE3.NO CONNECTIONSTYLE 27:PIN 1.CATHODE2.CATHODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°END VIEWDIMENSIONS: MILLIMETERS3X3XRECOMMENDED STYLE 28:PIN 1.ANODE2.ANODE3.ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

BZX84C16V中文资料

SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。

BZX84C3V3LT1G中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•Pb−Free Packages are Available•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)Mechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATION(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°Cunless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA)ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Z*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)Z*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageI F , F O R W A R D C U R R E N T (m A )1000100101C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 5. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N ER C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23TO−236AB CASE 318−09ISSUE AK*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C18-V中文资料

Document Number Small Signal Zener DiodesFeatures•These diodes are also available in other case styles and other configurationsincluding: the SOD-123 case with type designation BZT52 series, the dual zenerdiode common anode configuration in the SOT-23case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23series.•The Zener voltages are graded according to the international E 24 standard. Standard Zener volt-age tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.•Silicon Planar Power Zener Diodes •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECWeight: approx. 8.8 mgPackaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout.Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout.ParameterT est condition Symbol Value Unit Power dissipationP tot300 1)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 420 1)°C/W Junction temperature T j 150°C Storage temperature rangeT S- 65 to + 150°CElectrical CharacteristicsPartnumber MarkingCodeZenerVoltageRangeDynamic Resistance T estCurrentTemp.Coefficientof ZenerVoltageTestCurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R@ V R VΩmA10-4/°C mAµA Vmin max min maxBZX84C2V4-V Z11 2.2 2.670 (≤100)2755-9.0-4.01501 BZX84C2V7-V Z12 2.5 2.975 (≤100)300 (≤600)5-9.0-4.01201 BZX84C3V0-V Z13 2.8 3.280 (≤95)325 (≤600)5-9.0-3.01101 BZX84C3V3-V Z14 3.1 3.585 (≤95)350 (≤600)5-8.0-3.0151 BZX84C3V6-V Z15 3.4 3.885 (≤90)375 (≤600)5-8.0-3.0151 BZX84C3V9-V Z16 3.7 4.185 (≤90)400 (≤600)5-7.0-3.0131 BZX84C4V3-V Z174 4.680 (≤90)410 (≤600)5-6.0-1.0131 BZX84C4V7-V Z1 4.4550 (≤80)425 (≤500)5-5.0+2.0132 BZX84C5V1-V Z2 4.8 5.440 (≤60)400 (≤480)5-3.0+4.0122 BZX84C5V6-V Z3 5.2615 (≤40)80 (≤400)5-2.0+6.0112 BZX84C6V2-V Z4 5.8 6.6 6.0 (≤10)40 (≤150)5-1.0+7.0134 BZX84C6V8-V Z5 6.47.2 6.0 (≤15)30 (≤80)5+2.0+7.0124 BZX84C7V5-V Z677.9 6.0 (≤15)30 (≤80)5+3.0+7.0115 BZX84C8V2-V Z77.78.7 6.0 (≤15)40 (≤80)5+4.0+7.010.75 BZX84C9V1-V Z88.59.6 6.0 (≤15)40 (≤100)5+5.0+8.010.56 BZX84C10-V Z99.410.68.0 (≤20)50 (≤150)5+5.0+8.010.27 BZX84C11-V Y110.411.610 (≤20)50 (≤150)5+5.0+9.010.18 BZX84C12-V Y211.412.710 (≤25)50 (≤150)5+6.0+9.010.18 BZX84C13-V Y312.414.110 (≤30)50 (≤170)5+7.0+9.010.18 BZX84C15-V Y413.815.610 (≤30)50 (≤200)5+7.0+9.010.050.7 V Znom.BZX84C16-V Y515.317.110 (≤40)50 (≤200)5+8.0+9.510.050.7 V Znom.BZX84C18-V Y616.819.110 (≤45)50 (≤225)5+8.0+9.510.050.7 V Znom.BZX84C20-V Y718.821.215 (≤55)60 (≤225)5+8.0+1010.050.7 V Znom.BZX84C22-V Y820.823.320 (≤55)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C24-V Y922.825.625 (≤70)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C27-V Y1025.128.925 (≤80)65 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C30-V Y11283230 (≤80)70 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C33-V Y12313535 (≤80)75 (≤325)2+8.0+100.50.050.7 V Znom.BZX84C36-V Y13343835 (≤90)80 (≤350)2+8.0+100.50.050.7 V Znom.BZX84C39-V Y14374140 (≤130)80 (≤350)2+10+120.50.050.7 V Znom.BZX84C43-V Y15404645 (≤150)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C47-V Y16445050 (≤170)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C51-V Y17485460 (≤180)85 (≤400)2+10+120.50.050.7 V Znom.BZX84C56-V Y18526070 (≤200)100 (≤425)2+9.0+110.50.050.7 V Znom.BZX84C62-V Y19586680 (≤215)100 (≤450)2+9.0+120.50.050.7 V Znom.BZX84C68-V Y20647290 (≤240)150 (≤475)2+10+120.50.050.7 V Znom.BZX84C75-V Y21707995 (≤255)170 (≤500)2+10+120.50.050.7 V Znom. Document Number 85763Document Number Electrical CharacteristicsPartnumberMarking CodeZener Voltage Range Dynamic ResistanceTest CurrentT emp. Coefficient of Zener Voltage T est CurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R @ V R V ΩmA10-4/°C mAµAVminmax min max BZX84B2V4-V Z50 2.35 2.4570 (≤100)2755-9-41501BZX84B2V7-V Z51 2.65 2.7575 (≤100)300 (≤600)5-9-41201BZX84B3V0-V Z52 2.94 3.0680 (≤95)325 (≤600)5-9-31101BZX84B3V3-V Z53 3.23 3.3785 (≤95)350 (≤600)5-8-3151BZX84B3V6-V Z54 3.53 3.6785 (≤90)375 (≤600)5-8-3151BZX84B3V9-V Z55 3.82 3.9885 (≤90)400 (≤600)5-7-3131BZX84B4V3-V Z56 4.21 4.3980 (≤90)410 (≤600)5-6-1131BZX84B4V7-V Z57 4.61 4.7950 (≤80)425 (≤500)5-52132BZX84B5V1-V Z585 5.240 (≤60)400 (≤480)5-34122BZX84B5V6-V Z59 5.49 5.7115 (≤40)80 (≤400)5-26112BZX84B6V2-V Z60 6.08 6.32 6.0 (≤10)40 (≤150)5-17134BZX84B6V8-V Z61 6.66 6.94 6.0 (≤15)30 (≤80)527124BZX84B7V5-V Z627.357.65 6.0 (≤15)30 (≤80)537115BZX84B8V2-V Z638.048.36 6.0 (≤15)40 (≤80)54710.75BZX84B9V1-V Z648.929.28 6.0 (≤15)40 (≤100)55810.56BZX84B10-V Z659.810.28.0 (≤20)50 (≤150)55810.27BZX84B11-V Z6610.811.210 (≤20)50 (≤150)55910.18BZX84B12-V Z6711.812.210 (≤25)50 (≤150)56910.18BZX84B13-V Z6812.713.310 (≤30)50 (≤170)57910.18BZX84B15-V Z6914.715.310 (≤30)50 (≤200)57910.050.7 V Znom.BZX84B16-V Z7015.716.310 (≤40)50 (≤200)589.510.050.7 V Znom.BZX84B18-V Z7117.618.410 (≤45)50 (≤225)589.510.050.7 V Znom.BZX84B20-V Z7219.620.415 (≤55)60 (≤225)581010.050.7 V Znom.BZX84B22-V Z7321.622.420 (≤55)60 (≤250)581010.050.7 V Znom.BZX84B24-V Z7423.524.525 (≤70)60 (≤250)581010.050.7 V Znom.BZX84B27-V Z7526.527.525 (≤80)65 (≤300)28100.50.050.7 V Znom.BZX84B30-V Z7629.430.630 (≤80)70 (≤300)28100.50.050.7 V Znom.BZX84B33-V Z7732.333.735 (≤80)75 (≤325)28100.50.050.7 V Znom.BZX84B36-V Z7835.336.735 (≤90)80 (≤350)28100.50.050.7 V Znom.BZX84B39-V Z7938.239.840 (≤130)80 (≤350)210120.50.050.7 V Znom.BZX84B43-V Z8042.143.945 (≤150)85 (≤375)210120.50.050.7 V Znom.BZX84B47-V Z8146.147.950 (≤170)85 (≤375)210120.50.050.7 V Znom.BZX84B51-V Z82505260 (≤180)85 (≤400)210120.50.050.7 V Znom.BZX84B56-V Z8354.957.170 (≤200)100 (≤425)29110.50.050.7 V Znom.BZX84B62-V Z8460.863.280 (≤215)100 (≤450)29120.50.050.7 V Znom.BZX84B68-V Z8566.669.490 (≤240)150 (≤475)210120.50.050.7 V Znom.BZX84B75-VZ8673.576.595 (≤255)170 (≤500)210120.50.050.7 V Znom. Document Number 85763Typical Characteristics (Tamb = 25 °C unless otherwise specified)Figure 1. Forward characteristics Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure3. Pulse Thermal Resistance vs. Pulse Duration1811418115Figure 4. Dynamic Resistance vs. Zener CurrentFigure 5. Capacitance vs. Zener VoltageFigure6. Dynamic Resistance vs. Zener Current1811718118Document Number Figure 7. Dynamic Resistance vs. Zener CurrentFigure 8. Thermal Differential Resistance vs. Zener Voltage Figure9. Dynamic Resistance vs. Zener Voltage18120Figure 10. Temperature Dependence of Zener Voltage vs. ZenerVoltageFigure 11. Change of Zener Voltage vs. Junction TemperatureFigure 12. Temperature Dependence of Zener Voltage vs. ZenerVoltage18124°C18136 Document Number 85763Figure 13. Change of Zener Voltage vs. Junction TemperatureFigure 14. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure 15. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltage181261813718138Document Number Figure 16. Breakdown CharacteristicsFigure17. Breakdown Characteristics1811118112 Document Number 85763Layout for R Theta;JA testThickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)Figure18. Breakdown Characteristics18113Package Dimensions in mm (Inches)Document Number Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85763。

BZX84-C2V2中文资料

FeaturesVz R ange 2.4 to 75V Power Dis s ipation 300mWF eaturesS ilicon P lanar Power Zener DiodesThe Zener voltages are graded according to theinternational E 24 standard.S tandard Zener voltage tolerance is ±5%.R eplace "C "with "B "for ±2% tol-erance.Other voltage tolerances and other Zener voltages are available upon request.Maximum R atings and Thermal C haracteris tics(T A = 25 unless otherwise noted)Parameter S ymbol Value Unit Zener C urrentI ZM 250mA Power Dissipation at T amb = 25¡ÉP tot 300(1)mWThermal R esistance Junction to Ambient Air R JA 420(1)¡É / W Junction Temperature T j 150¡É S torage Temperature R angeT S¡É Notes :(1) Device on fiberglass substrate, see layout..056 (1.43.122 (3.1)Top V iew).045 (1.15).110 (2.8).052 (1.33)).037 (0.95)S OT-23Top ViewDimensions in inches and (millimeters)S ilicon E pitaxial P lanar Diode · Fast switching diode in case S OT-23, especiallysuited for automatic insertion.Mechanical DataC as e:S OT-23 P lastic Package Weight:approx.0.008g· · · Mounting P ad L ayout65 to +150-¡ÉB ZX84-C 1V8TBD 1.70 2.005B ZX84-C 2V0TB D 1.90 2.205B ZX84-C 2V2TB D 2.10 2.405B ZX84-C 2V4Z11 2.20 2.605B ZX84-C 2V7Z12 2.50 2.905B ZX84-C 3Z13 2.80 3.205B ZX84-C 3V3Z14 3.10 3.505B ZX84-C 3V6Z15 3.40 3.805B ZX84-C 3V9Z16 3.70 4.105B ZX84-C 4V3Z17 4.00 4.605B ZX84-C 4V7Z1 4.40 5.005B ZX84-C 5V1Z2 4.80 5.405B ZX84-C 5V6Z3 5.20 6.005B ZX84-C 6V2Z4 5.80 6.605B ZX84-C 6V8Z5 6.407.205B ZX84-C 7V5Z67.007.905B ZX84-C 8V2Z77.708.705B ZX84-C 9V1Z88.509.605B ZX84-C 10Z99.410.65B ZX84-C 11Y 110.411.65B ZX84-C 12Y 211.412.75B ZX84-C 13Y 312.414.15B ZX84-C 15Y 413.815.65B ZX84-C 16Y 515.317.15B ZX84-C 18Y 616.819.15B ZX84-C 20Y 718.821.25B ZX84-C 22Y 820.823.35B ZX84-C 24Y 922.825.65B ZX84-C 27Y 1025.128.92B ZX84-C 30Y 1128.032.02B ZX84-C 33Y 1231.035.02B ZX84-C 36Y 1334.038.02B ZX84-C 39Y 1437.041.02B ZX84-C 43Y 1540.046.02B ZX84-C 47Y 1644.050.02B ZX84-C 51Y 1748.054.02B ZX84-C 56Y 1852.060.02B ZX84-C 62Y 1958.066.02B ZX84-C 68Y 2064.072.02B ZX84-C 75Y 2170.079.02B ZX84-B 1V8TB D 1.80 1.905B ZX84-B 2V0TB D 2.01 2.095B ZX84-B 2V2TB D 2.21 2.305B ZX84-B 2V4Z50 2.35 2.455B ZX84-B 2V7Z51 2.65 2.755B ZX84-B 3Z52 2.94 3.065B ZX84-B 3V3Z53 3.23 3.375B ZX84-B 3V6Z54 3.53 3.675B ZX84-B 3V9Z55 3.82 3.985B ZX84-B 4V3Z56 4.21 4.395B ZX84-B 4V7Z57 4.61 4.795B ZX84-B 5V1Z58 5.00 5.205B ZX84-B 5V6Z59 5.49 5.715B ZX84-B 6V2Z60 6.08 6.325B ZX84-B 6V8Z61 6.66 6.945B ZX84-B 7V5Z627.357.655B ZX84-B 8V2Z638.048.365B ZX84-B 9V1Z648.929.285B ZX84-B 10Z659.8010.25B ZX84-B 11Z6610.811.25B ZX84-B 12Z6711.812.25B ZX84-B 13Z6812.713.35B ZX84-B 15Z6914.715.35B ZX84-B 16Z7015.716.35B ZX84-B 18Z7117.618.45B ZX84-B 20Z7219.620.45B ZX84-B 22Z7321.622.45B ZX84-B 24Z7423.524.55B ZX84-B 27Z7526.527.52B ZX84-B 30Z7629.430.62B ZX84-B 33Z7732.333.72B ZX84-B 36Z7835.336.72B ZX84-B 39Z7938.239.82B ZX84-B 43Z8042.143.92B ZX84-B 47Z8146.147.92B ZX84-B 51Z8250.052.02B ZX84-B 56Z8354.957.12B ZX84-B 62Z8460.863.22B ZX84-B 68Z8566.669.42B ZX84-B 75Z8673.576.52Type ±5% Tol.Zener Voltage range (1)at I ZT1V Z (V)min.max.Tes t C urrentI ZT1(mA)Notes :(1) Measured with pulses t p = 5 msE lectrical C haracteris tics (T A = 25¡É unless otherwise noted) Maximum VF = 0.9V at I F = 10mAMarking C ode Type ±2% Tol.Zener Voltage range (1)at I ZT1V Z (V)min.max.Tes t C urrentI ZT1(mA)Marking C odeR atings andC haracteris tic C ur ves (T A = 25¡É unless otherwise noted)102030405012345678910I ,Z E N E R C U R R E N T (m A )Z V ,ZENER VOL TAGE (V)Fi g.2Zener Breakdown C haracteristicsZ 0246810102030405060708090100I ,Z E N E R C U R R E N T(m A )Z V,ZENER VOL TAGE (V)Fi g.4Zener Breakdown C haracteristicsZ C ,J U N C T I O N C A P A C I T A N C E (p F )j 101001000V ,NOMINAL ZENER VOL TAGE (V)Fig.5Junction Capacitance vs Nominal Zener VoltageZ400T ,Ambient Temperature,(°C)A Fi g.1Power Derating CurveP ,P o w e r D i s s i p a t i o n (m W )d 20010030005001002000102030I ,Z E N E R C U R R E N T(m A )Z V ,ZENER VOL TAGE (V)Fi g.3Zener Breakdown CharacteristicsZ 10203040。

BZX84C2V7V中文资料

SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。

BZX84C12LT1中文资料

BZX84B4V7LT1,BZX84C2V4LT1 Series Zener Voltage Regulators225 mW SOT−23 Surface MountThis series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables,and high density PC boards.Features•225 mW Rating on FR−4 or FR−5 Board•Zener Breakdown V oltage Range − 2.4 V to 75 V•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 KV) per Human Body Model •Tight Tolerance Series Available (See Page 4)•Pb−Free Packages are AvailableMechanical CharacteristicsCASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsPOLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0MAXIMUM RATINGSRatingSymbol MaxUnitTotal Power Dissipation on FR−5 Board,(Note 1) @ T A = 25°C Derated above 25°CThermal Resistance, Junction−to−Ambient P DR q JA 2251.8556mWmW/°C °C/W Total Power Dissipation on Alumina Substrate, (Note 2) @ T A = 25°C Derated above 25°CThermal Resistance, Junction−to−Ambient P DR q JA 3002.4417mW mW/°C °C/W Junction and Storage Temperature RangeT J , T stg−65 to+150°CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 X 0.75 X 0.62 in.2.Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.95 V Max. @ I F = 10 mA) Symbol ParameterV Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentZ ZT Maximum Zener Impedance @ IZTI R Reverse Leakage Current @ V RV R Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FQ V Z Maximum Temperature Coefficient of V ZC Max. Capacitance @ V R = 0 and f = 1 MHzELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Device*DeviceMarkingV Z1 (Volts)@I ZT1=5mA(Note 3)Z ZT1(W)@ I ZT1 =5 mAV Z2 (V)@I ZT2=1mA(Note 3)Z ZT2(W)@ I ZT2 =1 mAV Z3 (V)@I ZT3=20mA(Note 3)Z ZT3(W)@ I ZT3 =20 mAMax ReverseLeakageCurrentq VZ(mV/k)@ I ZT1 = 5 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV RVoltsI Rm A@Min MaxBZX84C2V4LT1, G Z11 2.2 2.4 2.6100 1.7 2.1600 2.6 3.250501−3.50450 BZX84C2V7LT1, G Z12 2.5 2.7 2.9100 1.9 2.46003 3.650201−3.50450 BZX84C3V0LT1, G Z13 2.83 3.295 2.1 2.7600 3.3 3.950101−3.50450 BZX84C3V3LT1, G Z14 3.1 3.3 3.595 2.3 2.9600 3.6 4.24051−3.50450 BZX84C3V6LT1, G Z15 3.4 3.6 3.890 2.7 3.3600 3.9 4.54051−3.50450 BZX84C3V9LT1, G Z16 3.7 3.9 4.190 2.9 3.5600 4.1 4.73031−3.5−2.5450 BZX84C4V3LT1, G W94 4.3 4.690 3.34600 4.4 5.13031−3.50450 BZX84C4V7LT1,G Z1 4.4 4.7580 3.7 4.7500 4.5 5.41532−3.50.2260 BZX84C5V1LT1,G Z2 4.8 5.1 5.460 4.2 5.34805 5.91522−2.7 1.2225 BZX84C5V6LT1,G Z3 5.2 5.6640 4.86400 5.2 6.31012−2.0 2.5200 BZX84C6V2LT1,G Z4 5.8 6.2 6.610 5.6 6.6150 5.8 6.86340.4 3.7185 BZX84C6V8LT1, G Z5 6.4 6.87.215 6.37.280 6.47.4624 1.2 4.5155 BZX84C7V5LT1, G Z677.57.915 6.97.98078615 2.5 5.3140 BZX84C8V2LT1, G Z77.78.28.7157.68.7807.78.860.75 3.2 6.2135 BZX84C9V1LT1, G Z88.59.19.6158.49.61008.59.780.56 3.87.0130 BZX84C10LT1, G Z99.41010.6209.310.61509.410.7100.27 4.58.0130 BZX84C11LT1, G Y110.41111.62010.211.615010.411.8100.18 5.49.0130 BZX84C12LT1,G Y211.41212.72511.212.715011.412.9100.18 6.010.0130 BZX84C13LT1, G Y312.41314.13012.31417012.514.2150.187.011.0120 BZX84C15LT1, G Y413.81515.63013.715.520013.915.7200.0510.59.213.0110 BZX84C16LT1, G Y515.31617.14015.21720015.417.2200.0511.210.414.0105 BZX84C18LT1,G Y616.81819.14516.71922516.919.2200.0512.612.416.0100 BZX84C20LT1, G Y718.82021.25518.721.122518.921.4200.051414.418.085 BZX84C22LT1, G Y820.82223.35520.723.225020.923.4250.0515.416.420.085 BZX84C24LT1, G Y922.82425.67022.725.525022.925.7250.0516.818.422.080DeviceDeviceMarkingV Z1 Below@I ZT1=2mA Z ZT1Below@ I ZT1 =2 mAV Z2 Below@I ZT2=0.1m-A Z ZT2Below@ I ZT4 =0.5 mAV Z3 Below@I ZT3=10mA Z ZT3Below@ I ZT3 =10 mAMax ReverseLeakageCurrentq VZ(mV/k) Below@ I ZT1 = 2 mAC (pF)@ V R = 0f = 1 MHzMin Nom Max Min Max Min MaxV R(V)I Rm A@Min MaxBZX84C27LT1, G Y1025.12728.9802528.930025.229.3450.0518.921.425.370 BZX84C30LT1, G Y112830328027.83230028.132.4500.052124.429.470 BZX84C33LT1, G Y123133358030.83532531.135.4550.0523.127.433.470 BZX84C36LT1, G Y133436389033.83835034.138.4600.0525.230.437.470 BZX84C39LT1, G Y1437394113036.74135037.141.5700.0527.333.441.245 BZX84C43LT1, G Y1540434615039.74637540.146.5800.0530.137.646.640 BZX84C47LT1, G Y1644475017043.75037544.150.5900.0532.942.051.840 BZX84C51LT1, G Y1748515418047.65440048.154.61000.0535.746.657.240 BZX84C56LT1, G Y1852566020051.56042552.160.81100.0539.252.263.840 BZX84C62LT1, G Y1958626621557.46645058.2671200.0543.458.871.635 BZX84C68LT1, G Y2064687224063.47247564.273.21300.0547.665.679.835 BZX84C75LT1, G Y2170757925569.47950070.380.21400.0552.573.488.635 3.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.*The “G” suffix indicates Pb−Free package available.ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)(Pinout: 1-Anode, 2-No Connection, 3-Cathode)(T A = 25°C unless otherwise noted, V F = 0.90 V Max. @ I F = 10 mA)DeviceDeviceMarkingV Z (Volts) @ I ZT = 5 mA(Note 4)Z ZT (W) @I ZT = 5 mA(Note 4)Max ReverseLeakageCurrent q VZ(mV/k)@ I ZT = 5 mA C (pF)@ V R=0,f = 1 MHzI R@V RMin Nom Max Max m A Volts Min MaxBZX84B4V7LT1, G T10 4.61 4.7 4.798032−3.50.2260 BZX84B5V1LT1, G T11 5.00 5.1 5.206022−2.7 1.2225 BZX84B5V6LT1, G T12 5.49 5.6 5.714012−2 2.5200 BZX84B6V2LT1, G T13 6.08 6.2 6.3210340.4 3.7185 BZX84B6V8LT1, G T14 6.66 6.8 6.941524 1.2 4.5155 BZX84B7V5LT1, G T157.357.57.651515 2.5 5.3140 BZX84B8V2LT1, G T168.048.28.36150.75 3.2 6.2135 BZX84B9V1LT1, G T178.929.19.28150.56 3.87130 BZX84B16LT1, G T1915.71616.3400.0511.210.414105 BZX84B18LT1, G T2017.61818.4450.0512.612.416100 4.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C.*The “G” suffix indicates Pb−Free package available.V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , NOMINAL ZENER VOLTAGEFigure 3. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()Ω1000100101V F , FORWARD VOLTAGE (V)Figure 4. Typical Forward VoltageC , C A P A C I T A N C E (p F )1000100101V Z , ZENER VOLTAGE (V)I Z , Z E N E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )μV Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 7. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 8. Zener Voltage versus Zener Current(12 V to 91 V)PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AN*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODENOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BZX84C中文资料

SILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageLow voltage general purpose voltage regulator diode ABSOLUTE MAXIMUM RATINGS (T a =25°C)UNIT %Repetitive Peak Forward Current mA Repetitive Peak Working Current mA mW mW °C °CTHERMAL RESISTANCE K/W* Device mounted on a ceramic alumna** Device mounted on an FR5 printed circuit boardELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficient ResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mA at I Z test=1mAmin max min max max Max (V)BZX84C2V4 2.20 2.60 -3.560050 1.0Z11BZX84C2V72.50 2.90 -3.560020 1.0Z12BZX84C3V0 2.80 3.20 -3.560010 1.0Z13BZX84C3V3 3.10 3.50 -3.5600 5.0 1.0Z14BZX84C3V6 3.40 3.80 -3.5600 5.0 1.0Z15BZX84C3V9 3.70 4.10-3.56003.0 1.0Z16BZX84C4V34.00 4.60 -3.5600 3.0 1.0Z17BZX84C4V7 4.40 5.00 -3.5 0.2500 3.0 2.0Z1BZX84C5V1 4.80 5.40 -2.7 1.2480 2.0 2.0Z2BZX84C5V6 5.20 6.00 -2.0 2.5400 1.0 2.0Z3BZX84C6V2 5.80 6.60 0.4 3.7150 3.0 4.0Z4BZX84C6V8 6.407.20 1.2 4.580 2.0 4.0Z5BZX84C7V57.007.90 2.5 5.380 1.0 5.0Z6BZX84C8V27.708.70 3.2 6.2800.7 5.0Z7BZX84C9V18.509.60 3.8 7.01000.5 6.0Z8BZX84C109.4010.604.5 8.01500.27.0Z9BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms1515152060401015909090801001009595 + 5VALUE max I ZRM Storage Temperature T stg Junction to Ambient*R th (j-a)DESCRIPTIONI FRM Working Voltage Tolerance Power Dissipation upto T a =25ºC SYMBOL *P D ***V Z ( + 5%)(V)at I Z test=5mA Resistance rdiff (Ω)at I Z test=5mA250420300- 65 to +150250Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAVoltage 150250Differential Working Power Dissipation upto T c =25ºC **P D Junction Temperature T j Pin Configuration1 = A N ODE2 = N C3 =CATHODE12Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILIICON PLANAR VOLTAGE REGULATOR DIODEBZX84C2V4 to 75V SOT-23Formed SMD PackageELECTRICAL CHARACTERISTICS (T a =25°C unless specified otherwise) Device Temperature DifferentialI R at V RMarkingCoefficientResistanceS Z (mV/K)rdiff (Ω)µAat I Z test=5mAat I Z test=1mA min max min max max Max (V)BZX84C1110.4011.60 5.4 9.01500.18Y1BZX84C1211.4012.70 6.0 101500.18Y2BZX84C1312.4014.10 7.0 111700.18Y3BZX84C1513.8015.60 9.2 132000.0510.5Y4BZX84C1615.3017.10 10.4 142000.0511.2Y5BZX84C1816.8019.10 12.4 162250.0512.6Y6BZX84C2018.8021.20 14.4 182250.0514.0Y7BZX84C2220.8023.30 16.4 202500.0515.4Y8BZX84C2422.8025.60 18.4 222500.0516.8Y9at I Z Test=2mA at I Z Test=0.5mABZX84C2725.1028.90 21.4 25.33000.0518.9Y10BZX84C3028.0032.00 24.4 29.43000.0521.0Y11BZX84C3331.0035.00 27.4 33.43250.0523.1Y12BZX84C3634.0038.00 30.4 37.43500.0525.2Y13BZX84C3937.0041.00 33.4 41.23500.0527.3Y14BZX84C4340.0046.00 37.6 46.63750.0530.1Y15BZX84C4744.0050.00 42.0 51.83750.0532.9Y16BZX84C5148.0054.00 46.6 57.24000.0535.7Y17BZX84C5652.0060.00 52.2 63.84250.0539.2Y18BZX84C6258.0066.00 58.8 71.64500.0543.4Y19BZX84C6864.0072.00 65.6 79.84750.0547.6Y20BZX84C7570.0079.0073.4 88.65000.0552.5Y21BZX84C2V4_75V Rev_060506E*** Pulse Test 20ms < tp < 50ms2002152402551301501701808080908025303070at I Z test=5mA at I Z test=5mA max at I Z test=2mAat I Z Test=2mA4045555520Resistance ***V Z ( + 5%)rdiff (Ω)(V)Forward Voltage at V F <0.9V at 10mA and <1.5V at 200mAWorking Differential Voltage Pin Configuration1 = A N ODE2 = N C3 =CATHODE12BZX84C2V4 to 75V SOT-23Formed SMD PackageSOT-23 Package Reel InformationReel specification for W" Packing (13" reel)BZX84C2V4_75V Rev_060506ESOT-23 Formed SMD PackageTape Specification for SOT-23 Surface Mount DeviceS O T -23 T &R3K /reel 10K /reel136 g m /3K p c s 415 g m /10K p c s3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12 K 51 K 10 K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192 K 408 K 300 K12 k g s 28 k g s 16 k g sPACKAGEN e t W e i g h t /Q t y DetailsS T A N D A R D PACKI N N E R C A R T O N B O XQ t y O U T E R C A R T O N B O XQ t y G r W t SizeSizePacking Detail±0.0114.47.9 – 10.9T R A I L E RF I X I N GT A P EL E A D E R9.2±0.5MAXNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 Pcs1.The bandolier of 330 mm reel contains at least 10,000 devices.2.The bandolier of 180 mm reel contains at least 3,000 devices.3.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.15 empty compartments for 180 mm reel.4.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.5.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.3.15Customer Notes BZX84C2V4 to 75VSOT-23Formed SMD Package1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to pleasedispose as per prevailing Environmental Legislation of their Country.2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical andElectronic Equipment (WEEE).BZX84C2V4_75V Rev_060506E DisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ 。

DIODES齐纳二极管BZX84C2V4- BZX84C51选型手册

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BZX84C2V4 - BZX84C51
Document number: DS18001 Rev. 33 - 2
1 of 5
Value
Unit
0.9
V
Thermal Characteristics
Characteristic Power Dissipation (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient Air (Note 6) Thermal Resistance, Junction to Ambient Air (Note 7) Operating and Storage Temperature Range
Maximum Zener Impedance f = 1KHz
ZZT @ IZT
ZZK @ IZK
()
() (mA)
100
600 1.0
100
600 1.0
95
600 1.0
95
600 1.0
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600 1.0
90
600 1.0
90
600 1.0