Q62702-P1634中文资料

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Q62702-F1062中文资料

2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 13.5 8 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 84 165 0.85 0.51 0.69 0.61 0 0.49 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300
fA mA Ω V fF V eV K
0.016123 A 0.019729 A
0.024709 fA
0.013277 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG

Q62702-F1590中文资料

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 96 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
Unit max. 6.5 600 100 150 V nA µA -
typ. 5 80
V(BR)CEO I CBO I EBO hFE
4.5 50
fT
15 24 17 0.48 1.33 1.75 1.25 0.75 1.6
GHz
Ccb Cce Ceb F
pF
dB
Gma
-
14
-
dB
|S21|2
8
11
Ga 1)
dB
Γopt
MAG ANG
RN
Ω
rn
-
F50Ω 2)
dB
|S21|2 2)
dB
V CE = 2V, I C = 10mA
0.9 1.8 2.4 3 4 0.9 1.25 1.45 1.7 2.1 15.5 11.8 10.9 8.5 6.6 0.29 0.47 0.56 0.62 0.66 175 -171 -159 -147 -127 2.7 3 3.5 5.5 15.5 0.054 0.06 0.07 0.11 0.31 0.98 1.74 2.23 3.05 4.49 16 9.5 6.8 4.7 1.9

Q62702-P936中文资料

Silizium-PIN-Fotodiode mit sehr kurzer SchaltzeitSilicon PIN Photodiode with Very Short Switching TimeWesentliche Merkmaleq Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm q Kurze Schaltzeit (typ. 5 ns)q Hermetisch dichte Metallbauform (TO-18)Anwendungenq Schneller optischer Empfänger mit gro βer Modulationsbandbreite für LichtgriffelFeaturesq Especially suitable for applications from 350 nm to 1100 nmq Short switching time (typ. 5 ns)q Hermetically sealed metal package (TO-18)Applicationsq Optical sensor of high modulation bandwidth for light pensTyp Type Bestellnummer Ordering Code SFH 216Q62702-P936SFH 216Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f e o 06314GrenzwerteMaximum Ratings Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T op ;T stg – 40...+ 125°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s)Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s)T S230°CSperrspannung Reverse voltageV R 50V Verlustleistung,T A = 25°C Total power dissipationP tot250mWKennwerte (T A = 25°C, Normlicht A,T = 2856 K)Characteristics (T A = 25°C, standard light A,T = 2856 K)Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Fotoempfindlichkeit,V R = 5 V Spectral sensitivityS50 (≥35)nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 850nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S maxSpectral range of sensitivity S = 10 % of S maxλ350 (1150)nmBestrahlungsempfindliche Fläche Radiant sensitive areaA 1mm 2Abmessung der bestrahlungsempfindlichen FlächeDimensions of radiant sensitive area L ×B L ×W 1×1mmAbstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surface H4.2...5.0mmHalbwinkel Half angleϕ±12Grad deg.Dunkelstrom,V R = 20 V Dark currentI R1 (≤ 5)nASpektrale Fotoempfindlichkeit,λ = 850 nmSpectral sensitivitySλ0.55A/WQuantenausbeute,λ = 850 nm Quantum yield η0.80ElectronsPhotonLeerlaufspannung,E v = 1000 Ix Open-circuit voltage VO410 (≥350)mVKurzschlußstrom,E v = 1000 Ix Short-circuit current ISC50µAAnstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrentRL = 50Ω;V R= 20 V;λ = 850 nm;I p = 800µAtr,t f5nsDurchlaßspannung,I F= 100 mA,E = 0 Forward voltage VF1.3VKapazität,V R= 0 V,f= 1 MHz,E = 0 Capacitance C11pFTemperaturkoeffizient von V O Temperature coefficient of V O TCV– 2.6mV/KTemperaturkoeffizient von I SC Temperature coefficient of I SC TCI0.2%/KRauschäquivalente Strahlungsleistung Noise equivalent powerVR = 20 V,λ = 850 nmNEP 3.3×10–14 W√HzNachweisgrenze,V R= 20 V,λ = 850 nm Detection limit D* 3.1×1012cm ·√HzWKennwerte(T A = 25°C, Normlicht A,T = 2856 K) Characteristics(T A = 25°C, standard light A,T = 2856 K)Bezeichnung Description SymbolSymbolWertValueEinheitUnitRelative spectral sensitivity S rel =f (λ)Dark current I R =f (V R ),E= 0Photocurrent I P =f (E v ),V R = 5 V Open-circuit-voltage V O =f (E v )CapacitanceC =f (V R ),f = 1 MHz,E= 0Total power dissipation P tot =f (T A )Dark currentI R =f (T A ),V R = 1 V,E= 0Directional characteristics S rel =f (ϕ)。

SFH757中文资料

Type Ordering Code SFH757Q62702-P3526SFH757VQ62702-P3527Plastic Fiber Optic Transmitter Diode Plastic Connector HousingSFH757SFH757VFiber OpticsFeatures•High speed transmitter for about 50Mbit/s up to 100Mbit/s (with peaking circuit)• 2.2mm aperture holds standard 1000 micron plastic fiber•No fiber stripping required•Molded microlens for efficient coupling Plastic Connector Housing•Mounting screw attached to the connector •Interference-free transmission from light-tight housing•Transmitter and receiver can be flexibly positioned •No cross talk•Auto insertable and wave solderable •Supplied in tubes Applications •Household electronics •Power electronics •Optical networks •LightbarriersTechnical DataAbsolute Maximum RatingsParameter Symbol Limit Values Unitmin.max. Operating Temperature Range T OP–40+80°C Storage Temperature Range T STG–40+100°C Junction Temperature T J100°CSoldering Temperature(2mm from case bottom, t≤ 5s)TS260°CReverse Voltage V R3V Forward Current I F50mA Surge Current (t≤ 10µs, D=0)I FSM1A Power Dissipation P tot120mW Thermal Resistance, Junction/Air R thJA450K/WCharacteristics (T A = 25°C)Parameter Symbol Value Unit Peak WavelengthλPeak650nm Spectral Bandwidth∆λ25nmSwitching Times (R L = 50Ω, I F = 50mA) 10% …90%90% … 10%tRtF15 (< 17)18 (< 20)nsCapacitance (f = 1MHz, V R = 0V)C O30pF Forward Voltage (I F = 50mA)V F 2.1 (≤ 2.8)VOutput Power Coupled into Plastic Fiber (I F = 10mA)1)ΦIN150(≥ 100)µWTemperature Coefficient ΦIN TCΦ–0.4%/K Temperature Coefficient V F TC V–3mV/K Temperature Coefficient λPeak TCλ0.16nm/K1)The output power coupled into plastic fiber is measured with a large area detector at the end of a short lengthof fiber (about 30cm). This value must not be used for calculating the power budget for a fiber optic system with a long fiber because the numerical aperture of plastic fibers decreases on the first meters. Therefore the fiber seems to have a higher attenuation over the first few meters compared with the specified value.Relative Spectral Emission I rel = f (λ)Relative Output Power I e /I e(50 mA) = f (I F ) single pulse, duration = 20 µsForward Current I F = f (V F ) single pulse, duration = 20 µsMaximum Permissible Forward Current IF = f (T A ), R thJA= 450 K/WPermissible Pulse Handling CapabilityI F = f(t P), duty cycle D = parameter,TA= 25°CSFH757SFH757VPackage Outlines Package OutlinesFigure1Figure2Edition 2004-03-19Published by Infineon Technologies AG,St.-Martin-Strasse 53,81669 München, Germany© Infineon Technologies AG 2004.All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated rmationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( ).WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may SFH757SFH757V Revision History:2004-03-19DS1Previous Version:2002-03-14。

Q62702-G44资料

Siemens Aktiengesellschaft
pg. 1/7
17.09.96 HL EH PD21/Gü
元器件交易网
GaAs MMIC
Electrical characteristics TA = 25°C f = 900 MHz Characteristics Power Gain Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Input return loss Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Output return loss Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V Gain Control Range
C1 , C2 Siemens B37490-K5120-J62 R1 Siemens B54102-A1471-J60 L1 Coilcraft 0805CS-270XMBC C4 Siemens B37940-K5220-J62 R2 Siemens B53102-A1511-J60 L2 Coilcraft 0805CS-220XMBC C3 , C5 Siemens B37940-K5681-J62 For optimized device performance, Vg has to be adapted (Vg ≈ -1V...0V) to I ≈ 45mA at Vd-supply under condition Vcontrol=+2V.
dG P1dB
1dBm gain compression Vd=3V; I=45mA; Vcon=2V Vd=5V; I=70mA; Vcon=2V

SFH3010中文资料

SFH 3010NPN-Silizium-FototransistorSilicon NPN Phototransistor 2003-01-301Wesentliche Merkmale•Sehr kleines SMT-Gehäuse (SCD 80):(LxBxH) 1,7 mm x 0,8 mm x 0,65 mm•Speziell geeignet für Anwendungen im Bereich von 420nm bis 1100nm •großer Empfangswinkel ±80°•geeignet für IR-Reflow-Löten (JEDEC level 4)•Nur gegurtet lieferbar Anwendungen•Miniaturlchtschranken •Sensorik (z.B. Handy)•…Messen/Steuern/Regeln“Typ Type Bestellnummer Ordering Code SFH 3010Q62702-P5555Features•Very small SMT package (SCD 80):(LxWxH) 1.7 mm x 0.8 mm x 0.65 mm •Especially suitable for applications from 420nm to 1100nm•large viewing angle ±80°•suitable for IR reflow soldering (JEDEC level 4)•Available only on tape and reel Applications•Miniature photointerrupters•Sensor technology (eg mobile phone)•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40…+ 100°CKollektor-Emitterspannung Collector-emitter voltage VCEVCE(t<2min)1530VKollektorstrom Collector current IC15mAKollektorspitzenstrom, τ < 10 µs Collector surge current ICS75mAEmitter-Kollektorspannung Emitter-collector voltage VEC7VVerlustleistung, T A = 25 °C Total power dissipation Ptot130mWWärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each RthJA585K/W2003-01-3022003-01-303Kennwerte (T A = 25 °C, λ = 950 nm)Characteristics Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 860nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von S maxSpectral range of sensitivity S = 10% of S maxλ420 (1100)nmBestrahlungsempfindliche Fläche Radiant sensitive area A 0.02mm 2Abmessungen der Chipfläche Dimensions of chip area L ×B L ×W0.38×0.38mm ×mm Halbwinkel Half angleϕ± 80Grad deg.Kapazität CapacitanceV CE = 5 V, f = 1 MHz, E =0C CE1.3pFDunkelstrom Dark currentV CE = 20 V, E =0I CEO2 (≤50)nAFotostrom PhotocurrentE e = 0.5 mW/cm 2,V CE = 5 V I PCE>25µAAnstiegszeit/Abfallzeit Rise and fall timeI C = 1 mA, V CC = 5 V, R L = 1 k Ωt r ,t f7µsKollektrr-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 10µAE e = 0.5 mW/cm 2, λ= 950nmV CEsat140mVDirectional CharacteristicsS= f (ϕ)rel2003-01-304Rel. Spectral Sensitivity,PhotocurrentPCE = (A),Dark CurrentCollector-Emitter CapacitanceDark CurrentTotal Power Dissipation2003-01-3052003-01-306Maßzeichnung Package OutlinesMa ße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).Published by OSRAM Opto Semiconductors GmbH & Co. OHGWernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved.Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.Package Epoxy, SmartLED (SCD 80)Colourcolourless, light diffusedPackage marking Collector。

BPW34S

Photosensitive area 2.65 mm x 2.65 mm
BPW 34
1.4
1.8
Approx. weight 0.1 g
GEO06643
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
10 3
Ι R nA
OHF00082
10 2
10 1
10 0
1000 TA
Directional characteristics Srel = f (ϕ)
40
30
20
10
0
ϕ 1.0
50 0.8
60
0.6
OHF01402
70
0.4
80
0.2
0 90
100
1.0
Wesentliche Merkmale q Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher
0.8
0.6
0.4
0
20 40 60 80 100 120
Semiconductor Group
5
1998-08-27
Bezeichnung Description
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent

SPLPL85中文资料

*)
SPL PLxx (SFH 4884xx)
Ordering Code Q62702-P1759 on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings (TA = 25 °C) Parameter Symbol min. Forward current Pulse width (FWHM) Duty factor Reverse voltage Operating temperature Storage temperature IF tp D VR Top Tstg – – – – – 20 – 40 – Values typ. – – 0.1 – … … – max. 20 100 – 3 + 85 + 100 260 A ns % V °C °C °C Unit
2
元器件交易网
SPL PLxx (SFH 4884xx)
Optical Characteristics (TA = 25 °C) Radiant Power Pcw vs. IF Permissible pulse handling capability; IF vs. t; Parameter D (duty cycle)
元器件交易网
Pulsed Laser Diode in Plastic Package 10 W Peak (Class 3 Laser Product) Preliminary
Features • Low cost plastic package • Reliable strained InGaAs/GaAs material • High power large-optical-cavity structure • Single emitting area 200 µm × 2 µm Applications • Range finding • Security, surveillance • Illumination, ignition • Testing and measurement Type SPL PL85 SPL PL90 Old Type (as of Oct. 1996) SFH 488425 – Wavelength 850 nm 904 nm

BPW34BS中文资料

BPW 34B BPW 34BSSilizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMTSilicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT 2002-01-241Wesentliche Merkmale•Speziell geeignet für Anwendungen im Bereich von 350nm bis 1100nm •Kurze Schaltzeit (typ. 25ns)•DIL-Plastikbauform mit hoher Packungsdichte Anwendungen•Lichtschranken für Gleich- undWechsellichtbetrieb im sichtbaren Lichtbereich •Industrieelektronik•…Messen/Steuern/Regeln“Typ Type Bestellnummer Ordering Code BPW 34B Q62702-P945BPW 34BSQ62702-P1601Features•Especially suitable for applications from 350nm to 1100nm•Short switching time (typ. 25 ns)•DIL plastic package with high packing density Applications•Photointerrupters •Industrial electronics•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40…+ 85°CSperrspannung Reverse voltage VR32VVerlustleistung, T A = 25 °C Total power dissipation Ptot150mWKennwerte (T A = 25 °C, Normlicht A, T = 2856 K) Characteristics (T A = 25 °C, standard light A, T = 2856 K)Bezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit, V R = 5 VSpectral sensitivityS75nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max850nmSpektraler Bereich der FotoempfindlichkeitS = 10% von SmaxSpectral range of sensitivityS = 10% of Smaxλ350…1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 7.45mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W2.73×2.73mm×mmHalbwinkel Half angle ϕ±60Graddeg.Dunkelstrom, V R = 10 V Dark current IR2 (≤ 30)nASpektrale Fotoempfindlichkeit, λ = 400 nm Spectral sensitivity Sλ0.2A/WQuantenausbeute, λ = 400 nm Quantum yield η0.62ElectronsPhotonLeerlaufspannung, E v = 1000 Ix Open-circuit voltage VO390mV2002-01-2422002-01-243Kurzschlu ßstrom Short-circuit currentE e = 0.5 mW/cm 2, λ = 400 nmI SC7.4 (≥ 5.4)µAAnstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 50 Ω; V R = 5 V; λ = 850 nm; I p = 800 µA t r, t f25nsDurchla ßspannung, I F = 100 mA, E = 0 Forward voltageV F 1.3V Kapazit ät, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 072pF Temperaturkoeffizient von V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient von I SC Temperature coefficient of I SCTC I 0.18%/K Rausch äquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 400 nmNEP1.3×10– 13Nachweisgrenze, V R = 10 V, λ = 400 nm Detection limitD*2.1×1012Kennwerte (T A = 25 °C, Normlicht A, T = 2856 K)Characteristics (T A = 25 °C, standard light A, T = 2856 K) (cont ’d)Bezeichnung ParameterSymbol SymbolWert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2002-01-244Relative Spectral SensitivityI RDirectional Characteristics S rel = f (ϕ)204060801001200.40.60.81.00Photocurrent I P = f (E v ), VR = 5 V CapacitanceTotal Power Dissipation IMaßzeichnungMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-245Published by OSRAM Opto Semiconductors GmbH & Co. OHGWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2002-01-246。

CMY91资料

D a t a s h e e tTypeMarkingOrdering code (taped)Package 1)RF(in)[6]CAP(1)[1]IF(out)[3]LO(in)[4]GND[2;5]1)Dimensions see chapter Package Outlines2)TS: Temperature measured at soldering point GNDElectrical characteristics at T A = 25°C / V D = 3 V unless otherwise specified Characteristics of 900MHz test and application circuit (see page app. circuit)T A = 25°C / V D = 3 V; CAP-pin connected to ground by 680Ω resistorNot used ports were terminated by 50 Ω.Please make sure that LO-signal is clean of noise and spurious at f = f LO +/- f IFElectrical characteristics at T A = 25°C / V D = 3 V unless otherwise specified Characteristics of 1450MHz application circuit (see page app. circuit)T A = 25°C / V D = 3 V; CAP-pin connected to ground by 680Ω resistorNot used ports were terminated by 50 Ω.Electrical characteristics at T A = 25°C / V D = 3 V unless otherwise specified Characteristics of 1900MHz application (see page app. circuit)T A = 25°C / V D = 3 V; CAP-pin connected to ground by 680Ω resistorNot used ports were terminated by 50 Ω.900MHz measurement and application circuit (Figure 1)LO in IF out Udc=3V100pF45MHz965MHz1) Siemens SIMID 01-coil; Ordering code: B82412-A3270-M2) Optional resistor increases IF-amplifier operating current and improvesconversion gain and intermodulation performance(minimum value: 27Ω)3) Siemens SIMID 01-coil; Ordering code: B82412-A3471-K1450MHz measurement and application circuit (Figure 2) 100pF1) Tune for optimum match2) Optional resistor increases IF-amplifier operating current and improvesconversion gain and intermodulation performance(minimum value: 27Ω)3) Siemens SIMID 01-coil; Ordering code: B82412-A3221-K1900MHz measurement and application circuit (Figure 1) 100pFLO in1800MHz1) Tune for optimum match2) Optional resistor increases IF-amplifier operating current and improvesconversion gain and intermodulation performance(minimum value: 27Ω)3) Siemens SIMID 01-coil; Ordering code: B82412-A3221-MPCB - Layouts for Application Circuits900MHz - application board:Actual size20mm × 20mm1450MHz - application board:Actual size20mm × 20mmPCB - data: Glass fiber epoxy board (double sided) ε= 4.8 thickness = 1mmr1900MHz - application board:Actual size20mm × 20mm= 4.8 thickness = 1mm PCB - data: Glass fiber epoxy board (double sided) εr。

SFH 221;中文规格书,Datasheet资料

SFH 221Silizium-Differential-Fotodiode Silicon Differential PhotodiodeLead (Pb) Free Product - RoHS Compliant2007-04-031Wesentliche Merkmale•Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm •Hohe Fotoempfindlichkeit•Hermetisch dichte Metallbauform (ähnlich TO-5), geeignet bis 125 °C 1)•Doppeldiode von extrem hoher Gleichmäβigkeit Anwendungen •Nachlaufsteuerungen •Kantenführung •Industrieelektronik•…Messen/Steuern/Regeln“1)Eine Abstimmung der Einsatzbedingungen mit dem Hersteller wird empfohlen bei T A > 85 °C1)For operating conditions of T A > 85 °C please contact us.Typ Type Bestellnummer Ordering Code SFH 221Q62702P0270Features•Especially suitable for applications from 400 nm to 1100 nm •High photosensitivity•Hermetically sealed metal package (similar to TO-5), suitable up to 125 °C 1)•Double diode with extremely high homogeneousness Applications •Follow-up controls •Edge drives•Industrial electronics•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … + 125°CSperrspannung Reverse voltage VR10VIsolationsspannung gegen Gehäuse Insulation voltage vs. package VIS100VVerlustleistung, T A = 25 °C Total power dissipation Ptot50mWKennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode Characteristics (T A = 25 °C, standard light A, T = 2856 K) per single diodeBezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit, V R = 5 VSpectral sensitivityS24 (≥ 15)nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max900nmSpektraler Bereich der FotoempfindlichkeitS = 10% von SmaxSpectral range of sensitivityS = 10% of Smaxλ400 … 1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 1.54mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W0.7 × 2.2mm²Halbwinkel Half angle ϕ± 55Graddeg.Dunkelstrom, V R = 10 V Dark current IR10 (≤ 100)nASpektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ0.55A/W2007-04-0322007-04-033Maximale Abweichung der Fotoempfindlichkeit vom MittelwertMax. deviation of the system spectral sensitivity from the averageΔS± 5%Quantenausbeute, λ = 850 nm Quantum yieldη0.80Electrons Photon Leerlaufspannung, E v = 1000 Ix Open-circuit voltageV O 330 (≥ 280)mV Kurzschlu βstrom, E v = 1000 Ix Short-circuit current I SC 24μA Isolationsstrom, V IS = 100 V Insulation currentI IS 0.1 (≤ 1)nA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 1 k Ω; V R = 5 V; λ = 850 nm; I p = 25 μA t r , t f500nsDurchla βspannung, I F = 40 mA, E = 0 Forward voltageV F 1.0V Kapazität, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 025pF Temperaturkoeffizient für V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient für I SC Temperature coefficient of I SCTC I 0.18%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 850 nmNEP1.0 × 10–13Nachweisgrenze, V R = 10 V, λ = 850 nm Detection limitD*1.2 × 1012Kennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede EinzeldiodeCharacteristics (T A = 25 °C, standard light A, T = 2856 K) per single diode (cont’d)Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2007-04-034OPTO SEMICONDUCTORSRelative Spectral SensitivityDark CurrentDirectional Characteristics S Photocurrent I P = f (Ev ), VR = 5 V CapacitanceTotal Power Dissipation Dark CurrentMaßzeichnungPackage OutlinesMaße in mm (inch) / Dimensions in mm (inch).2007-04-035LötbedingungenSoldering ConditionsWellenlöten (TTW)(nach CECC 00802)TTW Soldering(acc. to CECC 00802)OSRAM Opto Semiconductors GmbHWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2007-04-036分销商库存信息: OSRAMSFH 221。

2N6277中文数据手册

Test Conditions
V(BR)CEO(1) ICEO
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
IC = 10mA VCE = 75V
IB = 0
ICEX
Collector Cut-Off Current
VCE = 180V
1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 6 .6 7 (1 .0 5 0 )
m ax.
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277
MECHANICAL DATA
Dimensions in mm (inches)
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Cobo
Output Capacitance
ton
Turn-On Time
toff
Turn-Off Time
IC = 1.0A
VCE = 10V
f = 10MHz
VCB = 10V
IE = 0
f = 1.0MHz
IC = 20A IB1 = 2A IC = 20A IB1 = - IB2 = 2A
VCC = 80V VCC = 80V

BSS81B中文资料

V(BR)EB0 6
–
Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C
ICB0
–
–
–
–
Emitter-base cutoff current VEB = 3 V
IEB0
–
–
DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1)
–
50
–
35
–
75
–
40
–
100 –
25
–
40
–
Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
VCEsat
–
–
–
–
Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
BSS 79 BSS 81
Type
BSS 79 B BSS 79 C BSS 81 B BSS 81 C
Marking
CEs CFs CDs CGs
Ordering Code (tape and reel)
Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605
Pin Configuration

Q62702-P5166中文资料

SFH 4301Schnelle IR-Lumineszenzdiode (950 nm) im 3 mm Radial-GehäuseHigh-Speed Infrared Emitter (950 nm) in 3 mm Radial Package 2000-01-011OPTO SEMICONDUCTORSWesentliche Merkmale•Hohe Pulsleistung und hoher Gesamt-strahlungsfluß Φe•Sehr kurze Schaltzeiten (10 ns)•Sehr hohe Langzeitstabilität •Hohe Zuverlässigkeit Anwendungen•Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia)•Analoge und digitale Hi-Fi Audio- und Videosignalübertragung•Batteriebetriebene Geräte (geringe Stromaufnahme)•Anwendungen mit hohenZuverlässigkeits-ansprüchen bzw. erhöhten Anforderungen•Alarm- und Sicherungssysteme •IR FreiraumübertragungTyp Type Bestellnummer Ordering Code Gehäuse PackageSFH 4301Q62702-P51663-mm-LED-Gehäuse (T1), schwarz eingefärbt, An-schlüsse im 2.54-mm-Raster (1/10’’), Kathodenkennung: längerer Anschluß3 mm LED package (T1), black-colored epoxy resin, solder tabs lead spacing 2.54 mm (1/10’’), cathode marking: long leadFeatures •High pulse power and high radiant flux Φe •Very short switching times (10 ns)•Very high long-time stability •High reliabilityApplications•High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia)•Analog and digital Hi-Fi audio and video signal transmission•Low power consumption (battery) equipment •Suitable for professional and high-reliability applications•Alarm and safety equipment •IR free air transmissionGrenzwerte(T A = 25 °C) Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … +100°CSperrspannung Reverse voltage VR3VDurchlaßstromForward currentI F (DC)100mAStoßstromSurge currentt p = 10 µs, D = 0IFSM1AVerlustleistungPower dissipationP tot180mWWärmewiderstand Sperrschicht - Umgebung,freie Beinchenlänge max. 10 mmThermal resistance junction - ambient,lead length between package bottom and PCBmax. 10 mmR thJA375K/W2000-01-012OPTO SEMICONDUCTORSKennwerte(T A = 25 °C) CharacteristicsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitWellenlänge der Strahlung Wavelength of peak emissionI F = 100 mA, t p = 20msλpeak950nmSpektrale Bandbreite bei 50% von I max Spectral bandwidth at 50% of I maxI F = 100 mA, t p = 20ms∆λ40nmAbstrahlwinkel Half angle ϕ± 10Graddeg.Aktive ChipflächeActive chip areaA0.09mm2Abmessungen der aktiven Chipfläche Dimension of the active chip area L×BL×W0.3×0.3mmSchaltzeiten, I e von 10% auf 90% undvon 90% auf 10%Switching times, I e from 10% to 90% andfrom 90% to10%,I F = 100 mA, t P = 20 ms, R L = 50 Ωt r, t f10nsKapazitätCapacitanceV R = 0 V, f = 1 MHzC o 35pFDurchlaβspannungForward voltageIF= 100 mA, t p = 20ms I F = 1 A, t p = 100 µs V FV F1.5 (≤ 1.8)3.2 (≤ 3.6)VVSperrstrom Reverse currentV R = 3 VIR0.01 (≤ 10)µAGesamtstrahlungsflußTotal radiant fluxI F = 100 mA, t p = 20msΦe32mWTemperaturkoeffizient von I e bzw. ΦeTemperature coefficient of I e or ΦeI F = 100 mATC I – 0.44%/K2000-01-013OPTO SEMICONDUCTORS2000-01-014OPTO SEMICONDUCTORSTemperaturkoeffizient von V F Temperature coefficient of V F I F = 100 mATC V– 1.5mV/KTemperaturkoeffizient von λTemperature coefficient of λI F = 100 mATC λ+ 0.2nm/KStrahlstärke Ιe in Achsrichtunggemessen bei einem Raumwinkel von Ω = 0.01 sr Radiant Intensity Ιe in Axial Direction measured at a solid angle of Ω = 0.01 sr Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit StrahlstärkeRadiant intensityI F = 100 mA, t p = 20ms I e min I e typ 1660mW/sr mW/sr StrahlstärkeRadiant intensity I F = 1 A, t p = 100 µsI e typ400mW/srLötbedingungenSoldering ConditionsTauch-, Schwall- und Schlepplötung Dip, wave and drag soldering Kolbenlötung (mit 1,5-mm-Kolbenspitze)Iron soldering (with 1.5-mm-bit)Lötpad-temperaturTemperature of the soldering bath Maximal zulässige LötzeitMax. perm. soldering time Abstand Lötstelle –GehäuseDistance betweensolder joint and case Temperatur des KolbensTemperature of the solder-ing iron Maximale zulässige Lötzeit Max. permis-sible solder-ing time Abstand Lötstelle – Gehäuse Distance between solder joint and case260 °C10 s≥ 1.5 mm 300 °C3s≥ 1.5 mmKennwerte (T A = 25 °C) (cont’d)Characteristics Bezeichnung ParameterSymbol Symbol Wert Value Einheit UnitRelative Spectral EmissionI= f(λ)Forward Current I F = f (V F)Radiant IntensityΙe/Ιe (100 mA) = f (I F)Ierel= f (ϕ)Max. Permissible Forward CurrentI F = f(T)2000-01-015OPTO SEMICONDUCTORSMaßzeichnungPackage OutlinesMaße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.2000-01-016OPTO SEMICONDUCTORS。

SFH203P中文资料

SFH 217 SFH 217 F
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Top; Tstg TS Wert Value –55 ... +100 300 Einheit Unit
q Industrial electronics q For control and drive circuits q Light reflecting switches for steady and
Wechsellichtbetrieb q LWL Typ (*ab 4/95) Bestellnummer Type (*as of 4/95) Ordering Code SFH 217 (*SFH 203 P) SFH 217 F (*SFH 203 PFA) Q62702-P946 Q62702-P947
D*
3.5 x 1012
3.5 x 1012
SFH 217 SFH 217 F
Relative spectral sensitivity SFH 217 Srel = f (λ) Relative spectral sensitivity SFH 217 F Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage SFH 217 VL= f (Ev)

SFH320FA-3中文资料

NPN-Silizium-Fototransistor imSMT TOPLED ®-GehäuseSilicon NPN Phototransistor inSMT TOPLED ®-PackageMaße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.f p l 06724f p l f 6724Wesentliche Merkmaleq Speziell geeignet für Anwendungen imBereich von 380 nm bis 1150 nm(SFH 320) und bei 880 nm (SFH 320 FA)q Hohe Linearität q P-LCC-2 Gehäuse q Gruppiert lieferbarqfür alle Lötverfahren geeignetAnwendungenq Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronikq “Messen/Steuern/Regeln”Featuresq Especially suitable for applications from380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA)q High linearityq P-LCC-2 package q Available in groupsqSuitable for all soldering methodsApplicationsq Miniature photointerrupters q punched tape readers q Industrial electronicsq For control and drive circuitsSFH 320SFH 320 FAGrenzwerteMaximum Ratings Typ Type Bestellnummer Ordering Code Typ (*vorher)Type (*formerly)Bestellnummer Ordering Code SFH 320Q62702-P0961SFH 320 FA (*SFH 320 F)Q62702-P0988SFH 320-3Q62702-P390SFH 320 FA-3(*SFH 320 F-3)Q62702-P393SFH 320-4Q62702-P1606SFH 320 FA-4(*SFH 320 F-4)Q62702-P1607Bezeichnung DescriptionSymbol SymbolWert Value Einheit Unit Betriebs- und LagertemperaturOperating and storage temperature range T op ;T stg – 55...+ 100°C Kollektor-Emitterspannung Collector-emitter voltage V CE 35V Kollektorstrom Collector currentI C 15mA Kollektorspitzenstrom,τ <10 µs Collector surge current I CS 75mA Verlustleistung,T A = 25°C Total power dissipationP tot 165mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcbR thJA450K/WKennwerte (T A = 25°C,λ = 950 nm)Characteristics Bezeichnung DescriptionSymbol SymbolWert ValueEinheit UnitSFH 320SFH 320 FA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivityλS max 860900nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S maxSpectral range of sensitivity S = 10 % of S maxλ380...1150730...1120nmBestrahlungsempfindliche Fläche (∅240 µm)Radiant sensitive area A 0.0450.045mm 2Abmessung der Chipfläche Dimensions of chip areaL ×B L ×W 0.45×0.450.45×0.45mm ×mm Abstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surface H0.5...0.70.5...0.7mmHalbwinkel Half angleϕ±60±60Grad deg.Kapazität,V CE = 0 V,f = 1 MHz,E = 0Capacitance C CE 5.0 5.0pF Dunkelstrom Dark currentV CE = 25 V,E = 0I CEO1 (≤200)1 (≤200)nADie Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet.The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures.1)I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1)I PCEmin is the min. photocurrent of the specified groupBezeichnung DescriptionSymbol SymbolWert ValueEinheit UnitSFH 320/FA-2-3-4Fotostrom,λ =950 nm PhotocurrentE e = 0.1 mW/cm 2,V CE = 5 V SFH 320:E v = 1000 Ix, Normlicht/standard light A,V CE = 5 VI PCE I PCE ≥ 1616 (32420)25...50650≥401000µA µA Anstiegszeit/Abfallzeit Rise and fall timeI C = 1 mA,V CC = 5 V,R L = 1 k Ωt r , t f7678µsKollektor-Emitter-SättigungsspannungCollector-emitter saturation voltage I C =I PCEmin 1)×0.3,E e = 0.1 mW/cm 2V CEsat150150150150mVDirectional characteristics S rel =f (ϕ)Relative spectral sensitivity, SFH 320S rel =f (λ)Total power dissipation P tot =f (T A )Dark currentI CEO =f (T A ),V CE = 5 V , E= 0Relative spectral sensitivity ,SFH 320 FA S rel =f (λ)PhotocurrentI PCE =f (V CE ),E e = Parameter CapacitanceC CE =f (V CE ), f = 1 MHz,E= 0PhotocurrentI PCE =f (E e ),V CE = 5 VDark currentI CEO =f (V CE ),E = 0PhotocurrentI PCE /I PCE25o =f (T A ),V CE= 5 V。